Electronic component

Abstract

The electronic component of the present application includes a base, a plurality of external electrodes disposed on the base, and an electric insulator disposed on the base. Each of the plurality of external electrodes includes a conductive resin layer. The electric insulator includes an electrically insulating portion located at least on a region between the plurality of external electrodes on a surface of the base.

Description

Technical Field

[0001] This invention relates to electronic components. Background Technology

[0002] Known electronic components include: a substrate and multiple external electrodes disposed on the substrate (for example, see Japanese Patent Application Publication No. 2018-006501). Each of the multiple external electrodes comprises a conductive resin layer. Summary of the Invention

[0003] The conductive resin layer typically comprises multiple metal particles and resin. In structures where the external electrode contains a conductive resin layer, migration may occur at the external electrode. This migration is thought to occur due to phenomena such as the following.

[0004] An electric field acts on metal particles contained in a conductive resin layer, causing the metal particles to ionize. The resulting metal ions are attracted by the electric field generated between the external electrodes and move from the conductive resin layer. The electric field acting on the metal particles may include, for example, an electric field generated between the external electrodes, or an electric field generated between the external electrodes and an internal conductor disposed within the substrate. The metal ions moving from the conductive resin layer may react, for example, with electrons supplied from the substrate or the external electrodes, and precipitate as metal on the surface of the substrate.

[0005] One objective of the present invention is to provide an electronic component that suppresses migration even when the external electrodes contain a conductive resin layer.

[0006] An electronic component according to one aspect of the present invention includes: a substrate, a plurality of external electrodes disposed on the substrate, and an electrical insulator disposed on the substrate. Each of the plurality of external electrodes includes a conductive resin layer. The electrical insulator includes an electrically insulating portion, which is located at least in the region between the plurality of external electrodes on the surface of the substrate.

[0007] In one of the above methods, the electrically insulating portion of the electrically insulating material is located at least in the region between the plurality of external electrodes on the surface of the substrate. Therefore, even if the metal particles contained in the conductive resin layer are ionized, the electrically insulating portion hinders the reaction between the generated metal ions and electrons supplied from the substrate or external electrodes. Electrons are difficult to supply to the metal ions. As a result, the above method suppresses the generation of migration.

[0008] The above-described method can also include multiple internal electrodes. These multiple internal electrodes can be arranged opposite to each other within the substrate and electrically connected to corresponding external electrodes among the multiple external electrodes. The multiple internal electrodes may also include an outermost internal electrode located on the outermost side in the direction in which the multiple internal electrodes are opposite to each other. The substrate may also include a first side surface opposite to the outermost internal electrode. The conductive resin layer may also include a portion located on the first side surface. An electrically insulating portion may also be located on the first side surface.

[0009] In a structure where the conductive resin layer includes a portion located on the first side, metal particles contained in that portion of the conductive resin layer on the first side may be ionized. However, in a structure where the electrically insulating portion of the electrical insulator is located on the first side, the electrically insulating portion reliably prevents the reaction between metal ions generated from the metal particles contained in the conductive resin layer on the first side and electrons supplied from the substrate or external electrode. As a result, the structure where the electrically insulating portion of the electrical insulator is located on the first side reliably suppresses the generation of migration.

[0010] In one of the above embodiments, the substrate may also include a second side extending in a direction opposite to each other along the plurality of internal electrodes. The conductive resin layer may also include a portion located on the second side. An electrically insulating portion may also be located on the second side.

[0011] In a structure where the conductive resin layer includes a portion located on the second side, the metal particles contained in that portion of the conductive resin layer on the second side may be ionized. However, in a structure where the electrically insulating portion of the electrical insulator is located on the second side, the electrically insulating portion reliably prevents the reaction between metal ions generated from the metal particles contained in the conductive resin layer on the second side and electrons supplied from the substrate or external electrode. As a result, the structure where the electrically insulating portion of the electrical insulator is located on the second side reliably suppresses the generation of migration.

[0012] In one of the above embodiments, the substrate may also include: the exposed end faces of the corresponding internal electrodes among the plurality of internal electrodes. The electrical insulator may also include: an electrically insulating portion located on the end face.

[0013] In structures where the external electrode includes an electroplated layer, the plating solution may penetrate the substrate. When the plating solution penetrates the substrate, the electrical characteristics of the electronic components may deteriorate. However, in structures where the electrical insulator includes an electrically insulating portion located on the end face, even when the external electrode includes an electroplated layer, the electrically insulating portion on the end face prevents the plating solution from penetrating the substrate. Therefore, structures where the electrical insulator includes an electrically insulating portion located on the end face suppress the deterioration of the electrical characteristics of the electronic components.

[0014] In one of the above embodiments, each of the plurality of external electrodes may also include a sintered metal layer formed on an electrical insulator. The sintered metal layer may also be physically and electrically connected to the corresponding internal electrode. A conductive resin layer may also be formed on the sintered metal layer.

[0015] In a structure where a sintered metal layer with a conductive resin layer is formed on an electrical insulator, even if the metal particles contained in the conductive resin layer are ionized, electrons are difficult to supply to the metal ions. Therefore, this structure further suppresses the generation of migration.

[0016] In one of the above methods, the average thickness of the electrically insulating portion located on the first side can also be greater than the average thickness of the electrically insulating portion located on the end face.

[0017] The structure, where the average thickness of the electrically insulating portion located on the first side is greater than the average thickness of the electrically insulating portion located on the end face, further reliably hinders the reaction between metal ions generated from metal particles contained in the conductive resin layer and located on the first side and electrons supplied from the substrate or external electrode. Therefore, this structure further reliably suppresses the generation of migration.

[0018] The structure of an electrical insulator including electrically insulating portions on the end faces may reduce the connectivity between the corresponding sintered metal layers and the internal electrodes. However, a structure in which the average thickness of the electrically insulating portions on the end faces is less than the average thickness of the electrically insulating portions on the first side faces suppresses the reduction in connectivity between the corresponding sintered metal layers and the internal electrodes.

[0019] In one of the above methods, the average thickness of the electrically insulating portion located on the first side can also be 0.05 μm or more.

[0020] Structures with an average thickness of 0.05 μm or more for the electrically insulating portion located on the first side reliably suppress migration.

[0021] In one of the above methods, the average thickness of the electrically insulating portion located on the end face can also be greater than 0 and less than 0.2 μm.

[0022] The structure with an average thickness greater than 0 and less than 0.2 μm of the electrically insulating portion located on the end face reliably suppresses the deterioration of the electrical characteristics of electronic components and the reduction of the connectivity between the corresponding sintered metal layers and the internal electrodes.

[0023] In one of the above methods, the distance between the outermost inner electrode and the first side surface can be more than 100 μm and less than 400 μm.

[0024] In structures where the distance between the outermost inner electrode and the first side surface is less than 100 μm, there is a tendency for electrons to be supplied to metal ions from the outermost inner electrode. Therefore, in structures where the distance between the outermost inner electrode and the first side surface is 100 μm or more, it is difficult for electrons to be supplied to metal ions from the outermost inner electrode. As a result, this structure reliably suppresses the generation of migration.

[0025] In structures where the distance between the outermost inner electrode and the first side surface is greater than 400 μm, there is a tendency for cracks to form in the substrate. Therefore, structures where the distance between the outermost inner electrode and the first side surface is less than 400 μm suppress crack formation in the substrate.

[0026] In one of the above embodiments, the outermost inner electrode and the portion of the conductive resin layer located on the first side may not be electrically connected to each other. The electrically insulating portion located on the first side may also be located between the outermost inner electrode and the portion of the conductive resin layer located on the first side.

[0027] In a structure where the outermost inner electrode and the portion of the conductive resin layer located on the first side are not electrically connected to each other, the electric field generated between the outermost inner electrode and the portion of the conductive resin layer located on the first side acts on the metal particles contained in the conductive resin layer, making the metal particles easily ionized. However, in a structure where the electrically insulating portion on the first side is located between the outermost inner electrode and the portion of the conductive resin layer located on the first side, it is difficult to generate an electric field between the outermost inner electrode and the portion of the conductive resin layer located on the first side. Therefore, this structure further suppresses the generation of migration.

[0028] In one of the above methods, each of the plurality of external electrodes may also include a plating layer formed on the conductive resin layer in such a way as to cover the conductive resin layer.

[0029] In a structure where the conductive resin layer is covered by a coating, the coating suppresses migration even when the metal particles contained in the conductive resin layer are ionized. Therefore, this structure further suppresses migration.

[0030] In a structure where the conductive resin layer is covered by a coating, the coating inhibits the peeling of the conductive resin layer.

[0031] In one of the above methods, the electrical insulator and the conductive resin layer can also be connected to each other.

[0032] The structure, in which the electrical insulator and the conductive resin layer are in contact with each other, reliably suppresses the supply of electrons to the metal ions. Therefore, this structure reliably suppresses the occurrence of migration.

[0033] In one of the above methods, the electrical insulator can also be made of an electrically insulating film.

[0034] In one of the above methods, the electrical insulator can also be made of a silicon oxide film.

[0035] Silicon oxide films have high electrical insulation properties. Therefore, the structure of an electrical insulator composed of a silicon oxide film reliably suppresses the occurrence of migration.

[0036] In one of the above methods, the conductive resin layer may also contain multiple silver particles.

[0037] The invention will be more fully understood through the following detailed description and the accompanying drawings, which are for illustrative purposes only, but the invention is not limited thereto.

[0038] The further scope of the invention will become apparent from the detailed description provided below. However, it should be understood that while the detailed description and specific embodiments illustrate preferred embodiments of the invention, they are for illustrative purposes only, and various changes and modifications within the scope of the invention will become apparent to those skilled in the art through the detailed description. Attached Figure Description

[0039] Figure 1 This is a perspective view of a stacked capacitor according to one embodiment.

[0040] Figure 2 This is a diagram showing the cross-sectional structure of the stacked capacitor according to this embodiment.

[0041] Figure 3 This is a diagram showing the cross-sectional structure of the stacked capacitor according to this embodiment.

[0042] Figure 4 This is a schematic diagram showing the external electrode, the electrically insulating film, and the internal electrode.

[0043] Figure 5 This is a schematic diagram showing the external electrode, the electrically insulating film, and the internal electrode.

[0044] Figure 6 This is a schematic diagram showing the cross-sectional structure of a stacked capacitor.

[0045] Figure 7 This is a schematic diagram showing the cross-sectional structure of a stacked capacitor.

[0046] Figure 8 It is a graph showing the migration occurrence in each sample.

[0047] Figure 9 This is a diagram showing the cross-sectional structure of a multilayer capacitor in a modified example of this embodiment.

[0048] Figure 10 This is a diagram showing the cross-sectional structure of a multilayer capacitor in a modified example of this embodiment. Detailed Implementation

[0049] In the following description, embodiments of the invention are described in detail with reference to the accompanying drawings. In this description, the same elements or elements having the same function are labeled with the same reference numerals, and repeated explanations are omitted.

[0050] Reference Figures 1-5 The structure of the stacked capacitor C1 in this embodiment is explained. Figure 1 This is a perspective view of the stacked capacitor in the embodiment. Figure 2 and Figure 3 This is a diagram showing the cross-sectional structure of the stacked capacitor according to this embodiment. Figure 4 and Figure 5 This is a schematic diagram showing the external electrode, the electrically insulating film, and the internal electrode. In this embodiment, the electronic component is, for example, a multilayer capacitor C1.

[0051] like Figures 1-3 As shown, the stacked capacitor C1 includes: a cuboid-shaped body 3, a plurality of external electrodes 5, and an electrically insulating film EI. In this embodiment, the stacked capacitor C1 includes a pair of external electrodes 5. The pair of external electrodes 5 are disposed on the outer surface of the body 3. The pair of external electrodes 5 are separated from each other. The cuboid shape includes: a cuboid shape with chamfered corners and edges, or a cuboid shape with rounded corners and edges.

[0052] The base body 3 has a pair of opposing side surfaces 3a, a pair of opposing side surfaces 3c, and a pair of opposing end surfaces 3e. The pair of side surfaces 3a, 3c, and 3e are generally rectangular in shape. The pair of side surfaces 3a are opposing each other in a first direction D1. The pair of side surfaces 3c are opposing each other in a third direction D3. The pair of end surfaces 3e are opposing each other in a second direction D2. A multilayer capacitor C1 is soldered and mounted to an electronic device. The electronic device may include, for example, a circuit board or electronic components. In the multilayer capacitor C1, one side surface 3a is opposite to the electronic device. One side surface 3a is configured to form a mounting surface. One side surface 3a is a mounting surface. One of the pair of side surfaces 3c may also be configured to form a mounting surface. For example, if side surface 3a forms a first side surface, side surface 3c forms a second side surface.

[0053] The first direction D1 is orthogonal to each side face 3a and orthogonal to the third direction D3. The second direction D2 is parallel to each side face 3a and each side face 3c, and orthogonal to the first direction D1 and the third direction D3. The third direction D3 is orthogonal to each side face 3c, and the second direction D2 is orthogonal to each end face 3e. In this embodiment, the length of the body 3 in the second direction D2 is greater than the length of the body 3 in the first direction D1, and also greater than the length of the body 3 in the third direction D3. The second direction D2 is the direction of the long side of the body 3. The length of the body 3 in the first direction D1 and the length of the body 3 in the third direction D3 can also be equal to each other. The length of the body 3 in the first direction D1 and the length of the body 3 in the third direction D3 can also be different from each other.

[0054] The length of the base body 3 in the first direction D1 is the height of the base body 3. The length of the base body 3 in the third direction D3 is the width of the base body 3. The length of the base body 3 in the second direction D2 is the length of the base body 3. In this embodiment, the height of the base body 3 is 0.1 to 2.5 mm, the width of the base body 3 is 0.1 to 5.0 mm, and the length of the base body 3 is 0.2 to 5.7 mm. For example, the height of the base body 3 is 2.5 mm, the width of the base body 3 is 2.5 mm, and the length of the base body 3 is 3.2 mm.

[0055] A pair of side faces 3c extend in a first direction D1, connecting to a pair of side faces 3a. The pair of side faces 3c also extend in a second direction D2. A pair of end faces 3e extend in the first direction D1, connecting to a pair of side faces 3a. The pair of end faces 3e also extend in a third direction D3.

[0056] The body 3 has four edge portions 3g, four edge portions 3i, and four edge portions 3j. Edge portions 3g are located between the end face 3e and the side face 3a. Edge portions 3i are located between the end face 3e and the side face 3c. Edge portions 3j are located between the side face 3a and the side face 3c. In this embodiment, each edge portion 3g, 3i, and 3j is rounded in a curved manner. A so-called R-shaped chamfer is performed on the body 3. The end face 3e and the side face 3a are indirectly adjacent via edge portions 3g. The end face 3e and the side face 3c are indirectly adjacent via edge portions 3i. The side face 3a and the side face 3c are indirectly adjacent via edge portions 3j.

[0057] The substrate 3 is constructed by stacking multiple dielectric layers in a first direction D1. The substrate 3 has multiple stacked dielectric layers. In the substrate 3, the stacking direction of the multiple dielectric layers is consistent with the first direction D1. Each dielectric layer is, for example, a sintered body of a ceramic green sheet containing a dielectric material. The dielectric material, for example, contains dielectric ceramics. The dielectric ceramics, for example, contain BaTiO3-based, Ba(Ti,Zr)O3-based, or (Ba,Ca)TiO3-based dielectric ceramics. In the actual substrate 3, each dielectric layer is integrated to the extent that the boundaries between the dielectric layers are indistinguishable.

[0058] like Figure 2 and Figure 3 As shown, the electrically insulating film EI is disposed on the substrate 3. The electrically insulating film EI is directly disposed on the substrate 3. The electrically insulating film EI includes multiple film portions EIa, EIc, and EIe. In this embodiment, the electrically insulating film EI includes: a pair of film portions EIa, a pair of film portions EIc, and a pair of film portions EIe. Each film portion EIa is disposed on a corresponding side 3a of a pair of side surfaces 3a. Each film portion EIa covers the corresponding side surface 3a and is directly connected to the corresponding side surface 3a. Each film portion EIc is disposed on a corresponding side surface 3c of a pair of side surfaces 3c. Each film portion EIc covers the corresponding side surface 3c and is directly connected to the corresponding side surface 3c. Each film portion EIe is disposed on a corresponding end surface 3e of a pair of end surfaces 3e. Each film portion EIe covers the corresponding end surface 3e and is directly connected to the corresponding end surface 3e. The electrically insulating film EI can also constitute an electrically insulating body. Each film portion EIa, EIc, and EIe can also constitute an electrically insulating portion.

[0059] The electrically insulating film EI comprises multiple film portions respectively disposed on each of the ridge portions 3g, 3i, and 3j. Film portions EIa and EIc are connected by the film portion disposed on the ridge portion 3j. Film portions EIa and EIe are connected by the film portion disposed on the ridge portion 3g. Film portions EIc and EIe are connected by the film portion disposed on the ridge portion 3i. In this embodiment, the electrically insulating film EI covers substantially the entirety of the substrate 3. The multiple film portions respectively disposed on each of the ridge portions 3g, 3i, and 3j may also constitute an electrically insulating portion.

[0060] The electrically insulating film EI, for example, has a resistivity higher than that of the substrate 3. The resistivity of the substrate 3 includes either the volume resistivity or the surface resistivity of the substrate 3. The electrically insulating film EI may also have a resistivity higher than both the volume resistivity and the surface resistivity of the substrate 3.

[0061] The electrically insulating film (EI) can be made of, for example, an electrically insulating thin film. In this case, the electrically insulating film (EI) can also be made of a sputtered film. The electrically insulating film (EI) can be made of, for example, a silicon oxide film. The silicon oxide film is, for example, a silicon dioxide film. The electrically insulating film (EI) can also be made of, for example, an alumina film.

[0062] like Figure 2 and Figure 3 As shown, the multilayer capacitor C1 includes multiple internal electrodes 7 and multiple internal electrodes 9. Each internal electrode 7, 9 is an internal conductor disposed within the body 3. Each internal electrode 7, 9 is made of a conductive material commonly used as an internal conductor in multilayer electronic components. The conductive material may include, for example, a base metal. The conductive material may contain, for example, Ni or Cu. The internal electrodes 7, 9 are constructed as a sintered body of a conductive paste containing the aforementioned conductive material. In this embodiment, the internal electrodes 7, 9 are made of Ni.

[0063] Figure 3 In the illustration, the internal electrodes 7 and 9 are intentionally staggered from each other on the third direction D3 for the purpose of illustration.

[0064] Internal electrodes 7 and 9 are disposed at different positions (layers) in the first direction D1. Internal electrodes 7 and 9 are alternately arranged within the substrate 3 in a spaced-apart manner relative to each other in the first direction D1. The polarities of internal electrodes 7 and 9 are different from each other. One end of each internal electrode 7, 9 is exposed on a corresponding end face 3e of a pair of end faces 3e. Each internal electrode 7, 9 has one end exposed on the corresponding end face 3e.

[0065] Multiple internal electrodes 7 and multiple internal electrodes 9 are arranged alternately in the first direction D1. The multiple internal electrodes 7 and 9 are arranged within the body 3 in the first direction D1. Each internal electrode 7 and 9 lies in a plane substantially parallel to the side surface 3c. The internal electrodes 7 and 9 are opposite to each other in the first direction D1. The direction in which the internal electrodes 7 and 9 are opposite each other (the first direction D1) is orthogonal to the directions parallel to the side surface 3a (the second direction D2 and the third direction D3).

[0066] Multiple internal electrodes 7 include an outermost internal electrode 7A located in the first direction D1. Internal electrode 7A is opposite to one of a pair of side surfaces 3a in the first direction D1. Multiple internal electrodes 9 include an outermost internal electrode 9A located in the first direction D1. Internal electrode 9A is opposite to the other side surface 3a of the pair of side surfaces 3a in the first direction D1. Each internal electrode 7A and 9A is the outermost internal electrode.

[0067] like Figures 1-3 As shown, the external electrode 5 is disposed on the substrate 3. In this embodiment, the external electrode 5 is disposed on the electrically insulating film EI. The external electrode 5 is directly disposed on the electrically insulating film EI and indirectly disposed on the substrate 3.

[0068] External electrodes 5 are respectively disposed at both ends of the substrate 3 in the second direction D2. Each external electrode 5 is disposed on the corresponding end face 3e side of the substrate 3. In this embodiment, each external electrode 5 is disposed on a pair of side faces 3a, a pair of side faces 3c, and an end face 3e. Figure 2 and Figure 3 As shown, the external electrode 5 has multiple electrode portions 5a, 5c, and 5e. Electrode portions 5a are disposed on the side surface 3a and the ridge portion 3g. Each electrode portion 5c is disposed on the side surface 3c and the ridge portion 3i. Electrode portions 5e are disposed on the end face 3e. The external electrode 5 also has an electrode portion disposed on the ridge portion 3j.

[0069] The external electrode 5 is formed on the electrically insulating film EI, covering five surfaces: a pair of side surfaces 3a, an end surface 3e, and a pair of side surfaces 3c, as well as the ridge portions 3g, 3i, and 3j. Adjacent electrode portions 5a, 5c, and 5e are electrically connected. Electrode portion 5e covers one end of a corresponding internal electrode 7 or 9 among the plurality of internal electrodes 7 and 9. Electrode portion 5e is directly connected to the corresponding internal electrode 7 or 9. The external electrode 5 is electrically connected to the corresponding internal electrode 7 or 9. Furthermore... Figure 2 and Figure 3 As shown, the external electrode 5 has a first electrode layer E1, a second electrode layer E2, and a third electrode layer E3. The third electrode layer E3 constitutes the outermost layer of the external electrode 5. Each electrode part 5a, 5c, and 5e has a first electrode layer E1, a second electrode layer E2, and a third electrode layer E3. Each electrode part 5a, 5c, and 5e has a three-layer structure.

[0070] The first electrode layer E1 of the electrode portion 5a is disposed on the side surface 3a and the ridge portion 3g. The first electrode layer E1 of the electrode portion 5a is formed on the electrically insulating film EI such that it covers a portion of the side surface 3a and the entire ridge portion 3g. The first electrode layer E1 of the electrode portion 5a is in contact with the electrically insulating film EI on the aforementioned portion of the side surface 3a and the ridge portion 3g. In the electrode portion 5a, the first electrode layer E1 is directly in contact with the electrically insulating film EI (film portion EIa). The side surface 3a is indirectly covered by the first electrode layer E1 in the aforementioned portion, and exposed from the first electrode layer E1 in the remaining portion. The aforementioned portion of the side surface 3a is a region of the side surface 3a near the end face 3e. The first electrode layer E1 of the electrode portion 5a is located on the side surface 3a. The first electrode layer E1 may not be formed on the side surface 3a. The first electrode layer E1 may not be disposed on the side surface 3a.

[0071] The second electrode layer E2 of electrode portion 5a is disposed on the first electrode layer E1 and the side surface 3a. In electrode portion 5a, the second electrode layer E2 is formed on the first electrode layer E1 and the electrically insulating film EI, covering a portion of the first electrode layer E1 and the side surface 3a. In electrode portion 5a, the second electrode layer E2 is directly in contact with the first electrode layer E1 and the electrically insulating film EI. The second electrode layer E2 of electrode portion 5a directly covers a portion of the film portion EIa and is directly in contact with the film portion EIa. The second electrode layer E2 of electrode portion 5a is formed on the first electrode layer E1, directly covering the entire first electrode layer E1 of electrode portion 5a. In electrode portion 5a, the second electrode layer E2 indirectly covers the side surface 3a, with the first electrode layer E1 located between the second electrode layer E2 and the side surface 3a. The second electrode layer E2 of electrode portion 5a is located on the side surface 3a. Therefore, the second electrode layer E2 includes the portion located on the side surface 3a.

[0072] The third electrode layer E3 of electrode section 5a is disposed on the second electrode layer E2. In electrode section 5a, the third electrode layer E3 covers the entire second electrode layer E2. In electrode section 5a, the third electrode layer E3 is in contact with the entire second electrode layer E2. In electrode section 5a, the third electrode layer E3 is directly in contact with the second electrode layer E2. In electrode section 5a, the third electrode layer E3 is not directly in contact with the first electrode layer E1. The third electrode layer E3 of electrode section 5a is located on the side surface 3c.

[0073] The first electrode layer E1 of the electrode portion 5c is disposed on the side surface 3c and the ridge portion 3i. The first electrode layer E1 of the electrode portion 5c is formed on the electrically insulating film EI such that it covers a portion of the side surface 3c and the entire ridge portion 3i. The first electrode layer E1 of the electrode portion 5c is in contact with the electrically insulating film EI on the aforementioned portion of the side surface 3c and the ridge portion 3i. In the electrode portion 5c, the first electrode layer E1 is directly in contact with the electrically insulating film EI (film portion EIc). The side surface 3c is indirectly covered by the first electrode layer E1 in the aforementioned portion, and exposed from the first electrode layer E1 in the remaining portion. The aforementioned portion of the side surface 3c is a region of the side surface 3c near the end face 3e. The first electrode layer E1 of the electrode portion 5c is located on the side surface 3c. The first electrode layer E1 may not be formed on the side surface 3c. The first electrode layer E1 may not be disposed on the side surface 3c.

[0074] The second electrode layer E2 of electrode portion 5c is disposed on the first electrode layer E1 and the side surface 3c. In electrode portion 5c, the second electrode layer E2 is formed on the first electrode layer E1 and the electrically insulating film EI, covering a portion of the first electrode layer E1 and the side surface 3c. In electrode portion 5c, the second electrode layer E2 is directly in contact with the first electrode layer E1 and the electrically insulating film EI. The second electrode layer E2 of electrode portion 5c directly covers a portion of the film portion EIc and is directly in contact with the film portion EIc. The second electrode layer E2 of electrode portion 5c is formed on the first electrode layer E1, directly covering the entire first electrode layer E1 of electrode portion 5c. In electrode portion 5c, the second electrode layer E2 indirectly covers the side surface 3c, with the first electrode layer E1 located between the second electrode layer E2 and the side surface 3c. The second electrode layer E2 of electrode portion 5c is located on the side surface 3c. Therefore, the second electrode layer E2 includes the portion located on the side surface 3c.

[0075] The third electrode layer E3 of electrode section 5c is disposed on the second electrode layer E2. In electrode section 5c, the third electrode layer E3 covers the entire second electrode layer E2. In electrode section 5c, the third electrode layer E3 is in contact with the entire second electrode layer E2. In electrode section 5c, the third electrode layer E3 is directly in contact with the second electrode layer E2. In electrode section 5c, the third electrode layer E3 is not directly in contact with the first electrode layer E1. The third electrode layer E3 of electrode section 5c is located on side surface 3c.

[0076] A first electrode layer E1 is disposed on the end face 3e of the electrode portion 5e. The first electrode layer E1 of the electrode portion 5e is formed on the electrically insulating film EI in a manner that completely covers the end face 3e. The first electrode layer E1 of the electrode portion 5e is in contact with the electrically insulating film EI on the end face 3e. In the electrode portion 5e, the first electrode layer E1 is directly in contact with the electrically insulating film EI (film portion EIe). The end face 3e is indirectly covered by the first electrode layer E1.

[0077] A second electrode layer E2 is disposed on the first electrode layer E1 in electrode section 5e. In electrode section 5e, the second electrode layer E2 is formed on the first electrode layer E1 in such a way that it completely covers the first electrode layer E1. In electrode section 5e, the second electrode layer E2 is directly in contact with the first electrode layer E1. In electrode section 5e, the second electrode layer E2 indirectly covers the end face 3e such that the first electrode layer E1 is located between the second electrode layer E2 and the end face 3e. The second electrode layer E2 of electrode section 5e is located on the end face 3e. Therefore, the second electrode layer E2 includes a portion located on the end face 3e.

[0078] The third electrode layer E3 of electrode section 5e is disposed on the second electrode layer E2. In electrode section 5e, the third electrode layer E3 covers the entire second electrode layer E2. In electrode section 5e, the third electrode layer E3 is in contact with the entire second electrode layer E2. In electrode section 5e, the third electrode layer E3 is directly in contact with the second electrode layer E2. In electrode section 5e, the third electrode layer E3 is not directly in contact with the first electrode layer E1.

[0079] The electrically insulating film EI includes a portion covered by the external electrode 5 and a portion exposed from the external electrode 5. Film portion EIa has a portion covered by electrode portion 5a and a portion exposed from electrode portion 5a. Film portion EIc has a portion covered by electrode portion 5c and a portion exposed from electrode portion 5c.

[0080] The portion of the electrically insulating film EI that is exposed from the external electrodes 5 is located in the region between the plurality of external electrodes 5 on the surface of the substrate 3. Therefore, the electrically insulating film EI comprises: a film portion located at least in the region between the plurality of external electrodes 5 on the surface of the substrate 3. The electrically insulating film EI comprises: a film portion located at least in the region exposed from the surface of the plurality of external electrodes 5 on the substrate 3.

[0081] The first electrode layer E1 is formed by sintering a conductive paste applied to the surface of the substrate 3. The first electrode layer E1 is formed on the electrically insulating film EI, covering a portion of side surface 3a, a portion of side surface 3c, an end face 3e, and the ridge portions 3g, 3i, and 3j. The first electrode layer E1 is formed by sintering a metal component contained in the conductive paste. The metal component contained in the conductive paste may include, for example, metal particles. The first electrode layer E1 is a sintered metal layer. The first electrode layer E1 is a sintered metal layer formed on the substrate 3. The first electrode layer E1 is indirectly formed on the substrate 3. In this embodiment, the first electrode layer E1 is a sintered metal layer made of Cu. The first electrode layer E1 may also be a sintered metal layer made of Ni. The first electrode layer E1 contains base metals. The conductive paste may contain, for example, particles made of Cu or Ni, glass components, organic binders, and organic solvents. The first electrode layer E1 of each electrode portion 5a, 5c, and 5e is integrally formed.

[0082] like Figure 4 and Figure 5 As shown, the first electrode layer E1 is also physically connected to the corresponding internal electrodes 7 and 9. Figure 4 and Figure 5 This is a schematic diagram showing the external electrode, the electrically insulating film, and the internal electrode. Figure 4 and Figure 5 The illustration showing the shading of the cross-section is omitted.

[0083] The electrically insulating film EI (film portion EIe) is not necessarily formed uniformly with a specified film thickness. The material components constituting the electrically insulating film EI, such as silicon oxide, are not tightly attached to the outer surface of the substrate 3, but are sparsely attached. Therefore, the first electrode layer E1 can be locally and directly connected to the corresponding internal electrodes 7 and 9.

[0084] When the conductive paste is heated, the material components constituting the electrically insulating film EI diffuse into the conductive paste, and the material components constituting the electrically insulating film EI and the conductive paste are mixed together. Therefore, even when the material components constituting the electrically insulating film EI are tightly attached to the outer surface of the substrate 3, the first electrode layer E1 can be locally and directly connected to the corresponding internal electrodes 7 and 9.

[0085] The second electrode layer E2 is formed by curing a conductive resin applied to the first electrode layer E1 and the electrically insulating film EI. The second electrode layer E2 is formed over both the first electrode layer E1 and the electrically insulating film EI. The first electrode layer E1 is a base metal layer for forming the second electrode layer E2. The second electrode layer E2 is a conductive resin layer covering the first electrode layer E1. The conductive resin includes, for example, a resin, a conductive material, and an organic solvent. The resin is, for example, a thermosetting resin. The conductive material is, for example, metal particles. The metal particles are, for example, silver particles or copper particles. In this embodiment, the second electrode layer E2 includes a plurality of silver particles. The second electrode layer E2 includes a plurality of metal particles. The thermosetting resin is, for example, a phenolic resin, an acrylic resin, a silicone resin, an epoxy resin, or a polyimide resin. The second electrode layer E2 of each electrode portion 5a, 5c, 5e is integrally formed.

[0086] The third electrode layer E3 is formed on the second electrode layer E2 and the first electrode layer E1 (the portion exposed from the second electrode layer E2) by plating. The third electrode layer E3 can also have a multilayer structure. In this case, the third electrode layer E3 may have, for example, a Ni plating layer and a solder plating layer. The Ni plating layer is formed on the second electrode layer E2 and the first electrode layer E1. The solder plating layer is formed on the Ni plating layer. The solder plating layer covers the Ni plating layer. The Ni plating layer has better resistance to solder erosion than the metal contained in the second electrode layer E2. The third electrode layer E3 may also have a Sn plating layer, a Cu plating layer, or an Au plating layer instead of a Ni plating layer. The solder plating layer may include, for example, a Sn plating layer, a Sn-Ag alloy plating layer, a Sn-Bi alloy plating layer, or a Sn-Cu alloy plating layer. The third electrode layer E3 of each electrode portion 5a, 5c, and 5e is integrally formed.

[0087] like Figure 2As shown, the internal electrode 7A and the second electrode layer E2 contained in the electrode portion 5a not electrically connected to the internal electrode 7A are opposite each other in the first direction D1. When the internal electrode 7A and the second electrode layer E2 contained in the electrode portion 5a not electrically connected to the internal electrode 7A are viewed from the first direction D1, they overlap each other. Therefore, an electric field is easily generated between the internal electrode 7A and the second electrode layer E2 contained in the electrode portion 5a not electrically connected to the internal electrode 7A.

[0088] The film portion EIa is located between the internal electrode 7A and the second electrode layer E2 included in the electrode portion 5a that is not electrically connected to the internal electrode 7A. The internal electrode 7A and the second electrode layer E2 included in the electrode portion 5a that is not electrically connected to the internal electrode 7A are opposite to each other when the film portion EIa exists between the internal electrode 7A and the second electrode layer E2 included in the electrode portion 5a that is not electrically connected to the internal electrode 7A. The internal electrode 7A and the second electrode layer E2 included in the electrode portion 5a that is not electrically connected to the internal electrode 7A are indirectly opposite to each other.

[0089] like Figure 2 As shown, the internal electrode 9A and the second electrode layer E2 included in the electrode portion 5a not electrically connected to the internal electrode 9A are opposite each other in the first direction D1. When the internal electrode 9A and the second electrode layer E2 included in the electrode portion 5a not electrically connected to the internal electrode 9A are viewed from the first direction D1, they overlap each other. Therefore, an electric field is easily generated between the internal electrode 9A and the second electrode layer E2 included in the electrode portion 5a not electrically connected to the internal electrode 9A.

[0090] The film portion EIa is located between the internal electrode 9A and the second electrode layer E2 included in the electrode portion 5a that is not electrically connected to the internal electrode 9A. The internal electrode 9A and the second electrode layer E2 included in the electrode portion 5a that is not electrically connected to the internal electrode 9A are opposite to each other when the film portion EIa exists between the internal electrode 9A and the second electrode layer E2 included in the electrode portion 5a that is not electrically connected to the internal electrode 9A. The internal electrode 9A and the second electrode layer E2 included in the electrode portion 5a that is not electrically connected to the internal electrode 9A are indirectly opposite to each other.

[0091] like Figure 3As shown, each of the plurality of internal electrodes 7 and the second electrode layer E2 contained in the electrode portion 5c not electrically connected to the internal electrode 7 are opposite each other in the third direction D3. When each internal electrode 7 and the second electrode layer E2 contained in the electrode portion 5c not electrically connected to the internal electrode 7 are viewed from the third direction D3, each internal electrode 7 and the second electrode layer E2 contained in the electrode portion 5c not electrically connected to the internal electrode 7 overlap with each other. Therefore, an electric field is easily generated between each internal electrode 7 and the second electrode layer E2 contained in the electrode portion 5c not electrically connected to the internal electrode 7.

[0092] The membrane portion EIc is located between each internal electrode 7 and the second electrode layer E2 included in the electrode portion 5c that is not electrically connected to the internal electrode 7. Each internal electrode 7 and the second electrode layer E2 included in the electrode portion 5c that is not electrically connected to the internal electrode 7 are opposite to each other when the membrane portion EIc exists between each internal electrode 7 and the second electrode layer E2 included in the electrode portion 5c that is not electrically connected to the internal electrode 7. Each internal electrode 7 and the second electrode layer E2 included in the electrode portion 5c that is not electrically connected to the internal electrode 7 are indirectly opposite to each other.

[0093] like Figure 3 As shown, each of the plurality of internal electrodes 9 and the second electrode layer E2 contained in the electrode portion 5c not electrically connected to the internal electrode 9 are opposite each other in the third direction D3. When each internal electrode 9 and the second electrode layer E2 contained in the electrode portion 5c not electrically connected to the internal electrode 9 are viewed from the third direction D3, each internal electrode 9 and the second electrode layer E2 contained in the electrode portion 5c not electrically connected to the internal electrode 9 overlap with each other. Therefore, an electric field is easily generated between each internal electrode 9 and the second electrode layer E2 contained in the electrode portion 5c not electrically connected to the internal electrode 9.

[0094] The membrane portion EIc is located between each internal electrode 9 and the second electrode layer E2 included in the electrode portion 5c that is not electrically connected to the internal electrode 9. The internal electrodes 9 and the second electrode layer E2 included in the electrode portion 5c that is not electrically connected to the internal electrode 9 are opposite to each other when the membrane portion EIc exists between each internal electrode 9 and the second electrode layer E2 included in the electrode portion 5c that is not electrically connected to the internal electrode 9. The internal electrodes 9 and the second electrode layer E2 included in the electrode portion 5c that is not electrically connected to the internal electrode 9 are indirectly opposite to each other.

[0095] Reference Figure 6 and Figure 7 The structure of the multilayer capacitor C1 is described below. As mentioned above, the multilayer capacitor C1 includes: a base 3, an electrically insulating film EI, and an external electrode 5. Figure 6 and Figure 7 This is a schematic diagram showing the cross-sectional structure of a multilayer capacitor. Figure 6 and Figure 7 The diagram of the third electrode layer E3 is omitted. Figure 6 and Figure 7 The shading shown in the diagram is omitted. Figure 7 In, with Figure 3 Similarly, the internal electrodes 7 and 9 are intentionally staggered from each other on the third direction D3.

[0096] The average thickness T of the membrane portion EIa EIa The average thickness T of the membrane portion EIe EIe That's all. Average thickness T EIa For example, above 0.02 μm. Average thickness T EIa It can also be greater than 0.05 μm. Average thickness T EIe For example, greater than 0 and less than 0.2 μm.

[0097] The distance T between the internal electrode 7A and the side surface 3a opposite to the internal electrode 7A OL For example, 100μm or larger and 400μm or smaller. Spacing T OL It is the distance between the internal electrode 7A and the side surface 3a on the first direction D1.

[0098] Average thickness T EIa Relative to interval T OL The ratio (T) EIa / T OL For example, 1.0 × 10 -4 That's all. (T) EIa / T OL It can also be 2.5 × 10 -4 above.

[0099] Although the diagram is omitted, the spacing between the internal electrode 9A and the side surface 3a opposite to the internal electrode 9A is, for example, 100 μm or more and 400 μm or less. The spacing between the internal electrode 9A and the side surface 3a opposite to the internal electrode 9A can also be the same as the spacing T. OL They can be equal or different.

[0100] Average thickness T EIa The ratio of the distance between the internal electrode 9A and the side surface 3a opposite to the internal electrode 9A is, for example, 1.0 × 10⁻⁶. -4 That's all. Average thickness T EIa The ratio of the spacing between the internal electrode 9A and the side surface 3a opposite to the internal electrode 9A can also be 2.5 × 10⁻⁶. -4 above.

[0101] The average thickness T of the membrane portion EIc EIc The average thickness T EIe That's all. Average thickness T EIcFor example, above 0.02 μm. Average thickness T EIc It can also be greater than 0.05 μm. Average thickness T EIc It can be compared with the average thickness T EIa They can be equal or different.

[0102] The spacing T between internal electrodes 7, 9 and side electrode 3c W For example, 50μm or larger and 300μm or smaller.

[0103] Average thickness T EIc Relative to interval T W The ratio (T) EIc / T W For example, 1.0 × 10 -4 That's all. (T) EIa / T OL It can also be 2.5 × 10 -4 above.

[0104] The second electrode layer E2 (the second electrode layer E2 included in the electrode portion 5a) includes a portion E2a that is in contact with the electrically insulating film EI. The maximum thickness T of portion E2a is... E2a For example, 20μm or larger and 60μm or smaller.

[0105] Average thickness T EIa Relative to the maximum thickness T E2a The ratio (T) EIa / T E2a For example, 6.67 × 10 -4 That's all. (T) EIa / T E2a It can also be 1.67 × 10 -3 above.

[0106] The second electrode layer E2 (the second electrode layer E2 included in the electrode portion 5c) includes a portion E2c that is in contact with the electrically insulating film EI. The maximum thickness T of the portion E2c is... E2c For example, thicknesses greater than 20 μm and less than 60 μm. Maximum thickness T E2c It can also be related to the maximum thickness T E2a They can be equal or different.

[0107] Average thickness T EIc Relative to the maximum thickness T E2c The ratio (T) EIc / T E2c For example, 6.67 × 10 -4 That's all. (T) EIc / T E2c It can also be 1.67 × 10 -3 above.

[0108] The length L of part E2a in the second direction D2 E2a For example, a length between 30μm and 500μm. Length L E2a The distance between the end edge of the second electrode layer E2 included in the electrode section 5a and the end edge of the first electrode layer E1 included in the electrode section 5a in the second direction D2.

[0109] Average thickness T EIa Relative to length L E2a The ratio (T) EIa / L E2a For example, 8.0 × 10 -5 That's all. (T) EIa / L E2a It can also be 2.0 × 10 -4 above.

[0110] The length L on the second direction D2 of part E2c E2c For example, a length between 30μm and 500μm. Length L E2c The distance between the end edge of the second electrode layer E2 included in the electrode section 5c and the end edge of the first electrode layer E1 included in the electrode section 5c in the second direction D2.

[0111] Average thickness T EIc Relative to length L E2c The ratio (T) EIa / L E2c For example, 8.0 × 10 -5 That's all. (T) EIa / L E2c It can also be 2.0 × 10 -4 above.

[0112] Average thickness T EIa T EIe T EIc For example, it can be obtained as follows.

[0113] Obtain cross-sectional photographs of the electrically insulating film EI, including each membrane portion EIa and EIe. The cross-sectional photograph is a photograph of the cross-section of the stacked capacitor C1 cut by a plane orthogonal to side 3a. For example, a cross-sectional photograph is a photograph of the cross-section of the stacked capacitor C1 cut by a plane parallel to and equidistant from a pair of side 3c. The obtained cross-sectional photographs are then processed using software. This image processing is used to determine the boundaries of the electrically insulating film EI (each membrane portion EIa and EIe). The area of ​​each membrane portion EIa and EIe on the obtained cross-sectional photograph is calculated.

[0114] Divide the area of ​​membrane portion EIa by the length of membrane portion EIa in the obtained cross-sectional photograph, and set the quotient as the average thickness T. EIa The area of ​​membrane portion EIe is divided by the length of membrane portion EIe in the obtained cross-sectional photograph, and the quotient is set as the average thickness T. EIe .

[0115] Obtain a cross-sectional photograph of the electrically insulating film EI, including the membrane portion EIc. The cross-sectional photograph is a photograph of the cross-section of the stacked capacitor C1 cut by a plane orthogonal to the side surface 3c. For example, a cross-sectional photograph of the stacked capacitor C1 cut by a plane parallel to and equidistant from the pair of side surfaces 3a. The obtained cross-sectional photograph is then processed using software. This image processing determines the boundary of the electrically insulating film EI (membrane portion EIc). The area of ​​the membrane portion EIc on the obtained cross-sectional photograph is calculated.

[0116] Divide the area of ​​membrane portion EIc by the length of membrane portion EIc in the obtained cross-sectional photograph, and set the quotient as the average thickness T. EIc .

[0117] Interval T OL Maximum thickness T E2a and length L E2a For example, it can be obtained as follows.

[0118] A cross-sectional photograph is obtained of the substrate 3 and the external electrode 5 containing the electrode portion 5a. The cross-sectional photograph is a photograph of the cross-section of the stacked capacitor C1 when cut by a plane orthogonal to the side surface 3a. For example, a cross-sectional photograph is a photograph of the cross-section of the stacked capacitor C1 when cut by a plane parallel to a pair of side surfaces 3c and located at an equidistant distance from the pair of side surfaces 3c. The obtained cross-sectional photograph is then processed using software. This image processing is used to determine the boundary of the second electrode layer E2. The maximum thickness T on the obtained cross-sectional photograph is then determined. E2a and length L E2a Through the above image processing, the boundaries between side 3a and the electrically insulating film EI, and between the body 3 and the internal electrode 7A, are determined. The spacing T on the acquired cross-sectional photograph is then calculated. OL .

[0119] Interval T W Maximum thickness T E2c and length L E2c For example, it can be obtained as follows.

[0120] A cross-sectional photograph is obtained of the substrate 3 and the external electrode 5 containing the electrode portion 5c. The cross-sectional photograph is a photograph of the cross-section of the stacked capacitor C1 when cut by a plane orthogonal to the side surface 3c. For example, a cross-sectional photograph is a photograph of the cross-section of the stacked capacitor C1 when cut by a plane parallel to a pair of side surfaces 3a and located at an equidistant distance from the pair of side surfaces 3a. The obtained cross-sectional photograph is then processed using software. This image processing is used to determine the boundary of the second electrode layer E2. The maximum thickness T on the obtained cross-sectional photograph is then determined. E2c and length L E2c Through the above image processing, the boundaries between side 3c and the electrically insulating film EI, and the boundaries between the body 3 and the internal electrodes 7 and 9 are determined. The spacing T on the acquired cross-sectional photograph is then calculated. W .

[0121] Next, the average thickness T EIa Interval T OL Maximum thickness T E2a and length L E2a The relationship will be explained in detail.

[0122] In order to clarify the average thickness T, the inventors of this invention... EIa Interval T OL Maximum thickness T E2a and length L E2a To investigate the relationship, the inventors conducted an experiment as follows. In this experiment, the inventors prepared an average thickness T... EIa Different samples S1 to S3 were used to confirm the migration occurrence in each sample S1 to S10. The results are presented below. Figure 8 . Figure 8 It is a graph showing the migration occurrence in each sample.

[0123] Each sample S1 to S10 is except for the average thickness T EIa Aside from the different points, the stacked capacitors have the same structure. In each sample S1 to S10, the height of the base body 3 is 1.6 mm, the width of the base body 3 is 1.6 mm, and the length of the base body 3 is 3.2 mm. The electrostatic capacitance of each sample S1 to S10 is 2.2 μF. In each sample S1 to S10, the interval T OL The maximum thickness is 200 μm. E2a It is 30μm in diameter and has a length L. E2a It is 250μm.

[0124] In sample S1, the average thickness T EIa The thickness is 0 μm. Sample S1 does not have an electrically insulating film EI.

[0125] In sample S2, the average thickness T EIa The thickness is 0.0015 μm. In sample S3, the average thickness T...EIa The thickness is 0.005 μm. In sample S4, the average thickness T... EIa The thickness is 0.01 μm. In sample S5, the average thickness T is... EIa The thickness is 0.02 μm. In sample S6, the average thickness T... EIa The thickness is 0.05 μm. In sample S7, the average thickness T is... EIa The thickness is 0.1 μm. In sample S8, the average thickness T is... EIa The thickness is 0.15 μm. In sample S9, the average thickness T... EIa The thickness is 0.2 μm. In sample S10, the average thickness T... EIa It is 0.5μm.

[0126] The migration occurred as follows.

[0127] High-temperature bias tests were conducted on each sample S1 to S10. In the high-temperature bias test, a specified voltage was applied to each sample S1 to S10 for a specified time under a high-temperature environment. In this test, the ambient temperature was 150℃, the applied voltage was 50V, and the voltage application time was 2000 hours.

[0128] After the high-temperature bias test, confirm whether migration occurs. If migration occurs, measure the maximum length of the migration.

[0129] The results of the above experiments, such as Figure 8 As shown, no migration was detected in samples S6 to S10. In contrast, migration was detected in samples S1 to S5.

[0130] In samples S1–S4, the maximum migration length was over 200 μm. In contrast, in sample S5, the maximum migration length was 62 μm. This confirms that sample S5 exhibits a tendency to suppress migration compared to samples S1–S4.

[0131] In practical applications of multilayer capacitors, the maximum required migration length is less than 70 μm, and even more specifically, less than 50 μm.

[0132] In the cascaded capacitor C1, the film portion EIa contained in the electrically insulating film EI is located at least in the region between the multiple external electrodes 5 on the surface of the substrate 3. Therefore, even if the metal particles contained in the second electrode layer E2 are ionized, the film portion EIa hinders the reaction of the generated metal ions with electrons supplied from the substrate 3 or the external electrodes 5. Electrons are difficult to supply to the metal ions. As a result, the cascaded capacitor C1 suppresses the generation of migration.

[0133] In the stacked capacitor C1, the film portion EIc included in the electrically insulating film EI is also located at least in the region between the multiple external electrodes 5 on the surface of the substrate 3. Therefore, the stacked capacitor C1 further suppresses the generation of migration.

[0134] In the structure where the electrode section 5a includes a second electrode layer E2, the metal particles contained in the second electrode layer E2 of the electrode section 5a may be ionized.

[0135] In the cascaded capacitor C1, the film portion EIa is located on the side surface 3a. Therefore, the film portion EIa reliably inhibits the reaction between metal ions generated from metal particles contained in the second electrode layer E2 of the electrode portion 5a and electrons supplied from the substrate 3 or the external electrode 5. As a result, the cascaded capacitor C1 reliably suppresses the generation of migration.

[0136] In the structure where the electrode portion 5c includes a second electrode layer E2, the metal particles contained in the second electrode layer E2 of the electrode portion 5c may be ionized.

[0137] In the cascaded capacitor C1, the film portion EIc is located on the side surface 3c. Therefore, the film portion EIc reliably inhibits the reaction between metal ions generated from metal particles contained in the second electrode layer E2 of the electrode portion 5c and electrons supplied from the substrate 3 or the external electrode 5. As a result, the cascaded capacitor C1 reliably suppresses the generation of migration.

[0138] In a structure where the external electrode 5 includes a third electrode layer E3, plating solution may be immersed into the substrate 3 from the end face 3e. If plating solution is immersed into the substrate 3, the electrical characteristics of the stacked capacitor C1 may deteriorate.

[0139] In the stacked capacitor C1, the electrically insulating film EI includes a film portion EIe. Therefore, even in the structure where the external electrode 5 includes a third electrode layer E3, the film portion EIe hinders the penetration of the plating solution into the substrate 3. As a result, the stacked capacitor C1 suppresses the degradation of its electrical characteristics.

[0140] In the cascaded capacitor C1, the first electrode layer E1 is formed on the electrically insulating film EI. Therefore, even if the metal particles contained in the second electrode layer E2 are granulated, electrons are further difficult to supply to the metal ions. As a result, the cascaded capacitor C1 further suppresses the generation of migration.

[0141] In the multilayer capacitor C1, the average thickness T EIa The average thickness T EIe Therefore, the reaction between metal ions generated from the metal particles contained in the second electrode layer E2 of the electrode section 5a and electrons supplied from the substrate 3 or the external electrode 5 is further reliably inhibited. As a result, the cascaded capacitor C1 further reliably suppresses the generation of migration.

[0142] The structure of the electrically insulating film EI, which includes the film portion EIe, may reduce the connectivity between the corresponding first electrode layer E1 and the internal electrodes 7 and 9.

[0143] In the multilayer capacitor C1, the average thickness T EIe Less than average thickness T EIa Therefore, the stacked capacitor C1 suppresses the reduction in the connectivity between the corresponding first electrode layer E1 and the internal electrodes 7 and 9.

[0144] In the multilayer capacitor C1, the average thickness T EIa The thickness is above 0.05 μm. Therefore, the stacked capacitor C1 reliably suppresses the generation of migration.

[0145] In the multilayer capacitor C1, the average thickness T EIe The value is greater than 0 and less than 0.2 μm. Therefore, the stacked capacitor C1 reliably suppresses the degradation of the electrical characteristics of the stacked capacitor C1 and the reduction of the connectivity between the corresponding first electrode layer E1 and the internal electrodes 7 and 9.

[0146] At interval T OL In structures smaller than 100 μm, there is a tendency for electrons to be supplied from internal electrodes 7A and 9A to metal ions. In the cascaded capacitor C1, the spacing T... OL The electrode diameter is greater than 100 μm. Therefore, in the cascaded capacitor C1, electrons are difficult to supply to metal ions from the internal electrodes 7A and 9A. As a result, the cascaded capacitor C1 reliably suppresses the generation of migration.

[0147] At interval T OL In structures larger than 400 μm, there is a tendency for cracks to form in the substrate 3. In the stacked capacitor C1, the spacing T... OL The thickness is below 400 μm. Therefore, the stacked capacitor C1 suppresses crack formation in the substrate 3.

[0148] An electric field is easily generated between the internal electrode 7A and the second electrode layer E2 contained in the electrode portion 5a that is not electrically connected to the internal electrode 7A. In this case, the generated electric field acts on the metal particles contained in the second electrode layer E2, and the metal particles are easily ionized.

[0149] In the multilayer capacitor C1, the film portion EIa is located between the inner electrode 7A and the second electrode layer E2 contained in the electrode portion 5a that is not electrically connected to the inner electrode 7A. Therefore, it is difficult to generate an electric field between the inner electrode 7A and the second electrode layer E2 contained in the electrode portion 5a that is not electrically connected to the inner electrode 7A.

[0150] In the multilayer capacitor C1, the film portion EIa is located between the inner electrode 9A and the second electrode layer E2 contained in the electrode portion 5a that is not electrically connected to the inner electrode 9A. Therefore, it is difficult to generate an electric field between the inner electrode 9A and the second electrode layer E2 contained in the electrode portion 5a that is not electrically connected to the inner electrode 9A.

[0151] As a result, the stacked capacitor C1 further suppresses the generation of migration.

[0152] An electric field is easily generated between the inner electrode 7 and the second electrode layer E2 not included in the electrode portion 5c of the inner electrode 7. In this case, the generated electric field acts on the metal particles contained in the second electrode layer E2, and the metal particles are easily ionized.

[0153] In the multilayer capacitor C1, the film portion EIc is located between the inner electrode 7 and the second electrode layer E2 contained in the electrode portion 5c that is not electrically connected to the inner electrode 7. Therefore, it is difficult to generate an electric field between the inner electrode 7 and the second electrode layer E2 contained in the electrode portion 5c that is not electrically connected to the inner electrode 7.

[0154] In the multilayer capacitor C1, the film portion EIc is located between the inner electrode 9 and the second electrode layer E2 contained in the electrode portion 5c that is not electrically connected to the inner electrode 9. Therefore, it is difficult to generate an electric field between the inner electrode 9 and the second electrode layer E2 contained in the electrode portion 5c that is not electrically connected to the inner electrode 9.

[0155] As a result, the stacked capacitor C1 further suppresses the generation of migration.

[0156] In the stacked capacitor C1, the outer electrode 5 includes a third electrode layer E3, and the second electrode layer E2 is covered by the third electrode layer E3. Therefore, even if the metal particles contained in the second electrode layer E2 are ionized, the third electrode layer E3 suppresses the generation of migration. As a result, the stacked capacitor C1 further suppresses the generation of migration.

[0157] In the stacked capacitor C1, the third electrode layer E3 inhibits the stripping of the second electrode layer E2.

[0158] In the cascaded capacitor C1, the electrically insulating film EI and the second electrode layer E2 are connected to each other. Therefore, the cascaded capacitor C1 reliably suppresses the supply of electrons to the metal ions. The cascaded capacitor C1 reliably suppresses the generation of migration.

[0159] In the stacked capacitor C1, the electrically insulating film EI is composed of a silicon oxide film.

[0160] Silicon oxide films have high electrical insulation properties. Silver does not easily diffuse into silicon oxide films. Therefore, even in a structure containing multiple silver particles in the second electrode layer E2, the electrical insulation properties of the insulating film EI can be maintained.

[0161] As a result, the stacked capacitor C1 reliably suppresses the generation of migration.

[0162] The second electrode layer E2 contains multiple silver particles. Silver particles are more prone to migration than copper particles, for example.

[0163] The stacked capacitor C1 reliably suppresses migration even when the second electrode layer E2 contains multiple silver particles.

[0164] Next, refer to Figure 9 and Figure 10 The structure of the stacked capacitor C2 in the modified example of this embodiment is explained. Figure 9 and Figure 10 This is a diagram showing the cross-sectional structure of a multilayer capacitor in a modified embodiment of this invention. The multilayer capacitor C2 in this modified embodiment is generally similar to or the same as the multilayer capacitor C1 described above. However, the structure of the external electrode 5 and the electrical insulating film EI differs from that of the original embodiment described above. Hereinafter, the differences between the original embodiment described above and this modified embodiment will be mainly explained.

[0165] like Figure 9 and Figure 10 As shown, the external electrode 5 is directly disposed on the body 3. The external electrode 5 is formed on the body 3 in such a way that it covers five surfaces, including a pair of side surfaces 3a, an end surface 3e, and a pair of side surfaces 3c, as well as the edge portions 3g, 3i, and 3j.

[0166] The first electrode layer E1 of the electrode portion 5a is formed on the substrate 3 in such a way that it covers a portion of the side surface 3a and the entire edge portion 3g. The first electrode layer E1 of the electrode portion 5a is in contact with the substrate 3 on the aforementioned portion of the side surface 3a and the edge portion 3g. In the electrode portion 5a, the first electrode layer E1 is directly in contact with the substrate 3. The aforementioned portion of the side surface 3a is directly covered by the first electrode layer E1, and the remaining portion of the side surface 3a, excluding the aforementioned portion, is exposed from the first electrode layer E1.

[0167] In electrode section 5a, a second electrode layer E2 is formed on the first electrode layer E1 and the substrate 3 such that it covers a portion of the first electrode layer E1 and the side surface 3c. In electrode section 5a, the second electrode layer E2 is directly in contact with the first electrode layer E1 and the substrate 3. In electrode section 5a, the second electrode layer E2 indirectly covers the side surface 3a such that the first electrode layer E1 is located between the second electrode layer E2 and the side surface 3a. In electrode section 5a, the second electrode layer E2 also directly covers the side surface 3a.

[0168] The first electrode layer E1 of the electrode portion 5c is formed on the substrate 3 in such a way that it covers a portion of the side surface 3c and the entire edge portion 3i. The first electrode layer E1 of the electrode portion 5c is in contact with the substrate 3 on the aforementioned portion of the side surface 3c and on the edge portion 3i. In the electrode portion 5c, the first electrode layer E1 is directly in contact with the substrate 3. The aforementioned portion of the side surface 3c is directly covered by the first electrode layer E1, and the remaining portion of the side surface 3c, excluding the aforementioned portion, is exposed from the first electrode layer E1.

[0169] In electrode section 5c, a second electrode layer E2 is formed on the first electrode layer E1 and the substrate 3 such that it covers a portion of the first electrode layer E1 and the side surface 3c. In electrode section 5c, the second electrode layer E2 is directly in contact with the first electrode layer E1 and the substrate 3. In electrode section 5c, the second electrode layer E2 indirectly covers the side surface 3c such that the first electrode layer E1 is located between the second electrode layer E2 and the side surface 3c. In electrode section 5c, the second electrode layer E2 also directly covers the side surface 3c.

[0170] like Figure 9 and Figure 10 As shown, the electrically insulating film EI includes multiple film portions EIa and EIc. The electrically insulating film EI includes a pair of film portions EIa and a pair of film portions EIc. In this modified example, the electrically insulating film EI does not include a film portion EIe. The end face 3e protrudes from the electrically insulating film EI. The electrically insulating film EI includes multiple film portions respectively disposed on each ridge portion 3j. Film portions EIa and film portions EIc are connected by the film portions disposed on the ridge portions 3j.

[0171] The membrane portion EIa is disposed on the side 3a in the area exposed from the second electrode layer E2 included in the electrode portion 5a. The membrane portion EIa does not include the portion covered by the second electrode layer E2 included in the electrode portion 5a. The membrane portion EIa only includes the area exposed from the second electrode layer E2 included in the electrode portion 5a. The membrane portion EIa may be in contact with the second electrode layer E2, or it may be separate from the second electrode layer E2.

[0172] The membrane portion EIc is disposed on the side 3c in the area exposed from the second electrode layer E2 included in the electrode portion 5c. The membrane portion EIc does not include the portion covered by the second electrode layer E2 included in the electrode portion 5c. The membrane portion EIc only includes the area exposed from the second electrode layer E2 included in the electrode portion 5c. The membrane portion EIc may be in contact with the second electrode layer E2, or it may be separate from the second electrode layer E2.

[0173] In the stacked capacitor C2, the film portion EIa is also located at least in the region between the multiple external electrodes 5 on the surface of the substrate 3. Therefore, as described above, the stacked capacitor C2 suppresses the generation of migration.

[0174] The film portion EIc is also located at least in the region between the multiple external electrodes 5 on the surface of the substrate 3. Therefore, as described above, the stacked capacitor C2 further suppresses the generation of migration.

[0175] In this specification, when describing the placement of one element on another element, the element may be placed directly on the other element or indirectly on it. When an element is indirectly placed on another element, the intervening element exists between the two elements. When an element is directly placed on another element, the intervening element does not exist between the two elements.

[0176] In this specification, when describing an element as being located on another element, the element may be located directly on the other element or indirectly on the other element. When an element is indirectly located on another element, the intervening element exists between the two elements. When an element is directly located on another element, the intervening element does not exist between the two elements.

[0177] In this specification, when describing a situation where one element covers another element, the element may directly cover the other element or indirectly cover it. When one element indirectly covers another element, the intervening element exists between the two elements. When one element directly covers another element, the intervening element does not exist between the two elements.

[0178] The embodiments and variations of the present invention have been described above. However, the present invention is not limited to these embodiments and variations, and various changes can be made to the embodiments without departing from the scope of the present invention.

[0179] In this embodiment and its variations, the electronic components are multilayer capacitors C1 and C2. However, the applicable electronic components are not limited to multilayer capacitors. Applicable electronic components include, for example, multilayer inductors, multilayer rheostats, multilayer piezoelectric actuators, multilayer thermistors, or multilayer composite components, or electronic components other than multilayer electronic components.

Claims

1. An electronic component comprising: The base material of dielectric ceramics; Multiple external electrodes are disposed on the substrate; Multiple internal electrodes are arranged in the body in a manner opposite to each other and are electrically connected to the corresponding external electrodes among the multiple external electrodes; as well as Electrical insulators disposed in the base body, Each of the plurality of external electrodes comprises a conductive resin layer. The electrical insulator includes: an electrically insulating portion located at least in the region between the plurality of external electrodes on the surface of the body. The base body comprises: The first side is opposite to the outermost inner electrode of the plurality of inner electrodes, which is located on the outermost side in the direction in which the plurality of inner electrodes are opposite to each other. as well as A pair of end faces, which are opposite to each other and adjacent to the first side face. The electrically insulating portion is located on the first side. The conductive resin layer includes a portion located on the first side surface and in contact with the electrically insulating portion. The average thickness of the electrically insulating portion located on the first side is 1.0 × 10⁻⁶ relative to the distance between the first side and the outermost inner electrode. -4 above, The ratio of the average thickness of the electrically insulating portion located on the first side surface to the maximum thickness of the portion of the conductive resin layer located on the first side surface and in contact with the electrically insulating portion is 6.67 × 10⁻⁶. -4 above, The ratio of the average thickness of the electrically insulating portion located on the first side surface to the length of the portion of the conductive resin layer located on the first side surface and in contact with the electrically insulating portion in the direction opposite to the pair of end faces is 8.0 × 10⁻⁶. -5 above.

2. The electronic component according to claim 1, wherein, The body further includes a second side extending along the direction in which the plurality of internal electrodes are opposite to each other. The electrically insulating portion is located on the second side. The conductive resin layer includes a portion located on the second side surface and in contact with the electrically insulating portion. The average thickness of the electrically insulating portion located on the second side is 1.0 × 10⁻⁶ compared to the distance between the second side and the internal electrode. -4 above, The ratio of the average thickness of the electrically insulating portion located on the second side surface to the maximum thickness of the portion of the conductive resin layer located on the second side surface and in contact with the electrically insulating portion is 6.67 × 10⁻⁶. -4 above, The ratio of the average thickness of the electrically insulating portion located on the second side surface to the length of the portion of the conductive resin layer located on the second side surface and in contact with the electrically insulating portion in the direction opposite to the pair of end faces is 8.0 × 10⁻⁶. -5 above.

3. The electronic component according to claim 1, wherein, In each of the pair of end faces, the corresponding internal electrode of the plurality of internal electrodes is exposed. The electrical insulator further includes an electrically insulating portion located on the end face.

4. The electronic component according to claim 2, wherein, In each of the pair of end faces, the corresponding internal electrode of the plurality of internal electrodes is exposed. The electrical insulator further includes an electrically insulating portion located on the end face.

5. The electronic component according to claim 3, wherein, Each of the plurality of external electrodes further comprises: a sintered metal layer formed on the electrical insulator and physically and electrically connected to the corresponding internal electrode. The conductive resin layer is formed on the sintered metal layer.

6. The electronic component according to claim 4, wherein, Each of the plurality of external electrodes further comprises: a sintered metal layer formed on the electrical insulator and physically and electrically connected to the corresponding internal electrode. The conductive resin layer is formed on the sintered metal layer.

7. The electronic component according to claim 5, wherein, The average thickness of the electrically insulating portion located on the first side surface is greater than the average thickness of the electrically insulating portion located on the end face.

8. The electronic component according to claim 6, wherein, The average thickness of the electrically insulating portion located on the first side surface is greater than the average thickness of the electrically insulating portion located on the end face.

9. The electronic component according to claim 7, wherein, The average thickness of the electrically insulating portion located on the first side is 0.05 μm or more.

10. The electronic component according to claim 8, wherein, The average thickness of the electrically insulating portion located on the first side is 0.05 μm or more.

11. The electronic component according to claim 7, wherein, The average thickness of the electrically insulating portion located on the end face is greater than 0 and less than 0.2 μm.

12. The electronic component according to claim 8, wherein, The average thickness of the electrically insulating portion located on the end face is greater than 0 and less than 0.2 μm.

13. The electronic component according to claim 9, wherein, The average thickness of the electrically insulating portion located on the end face is greater than 0 and less than 0.2 μm.

14. The electronic component according to claim 10, wherein, The average thickness of the electrically insulating portion located on the end face is greater than 0 and less than 0.2 μm.

15. The electronic component according to any one of claims 7 to 14, wherein, The distance between the outermost inner electrode and the first side surface is greater than 100 μm and less than 400 μm.

16. The electronic component according to any one of claims 1 to 14, wherein, The outermost inner electrode and the portion of the conductive resin layer located on the first side are not electrically connected to each other. The electrically insulating portion located on the first side is also located between the outermost inner electrode and the portion of the conductive resin layer located on the first side.

17. The electronic component according to any one of claims 1 to 14, wherein, Each of the plurality of external electrodes further includes a plating layer formed on the conductive resin layer in such a way as to cover the conductive resin layer.

18. The electronic component according to any one of claims 1 to 14, wherein, The electrical insulator is in contact with the conductive resin layer.

19. The electronic component according to any one of claims 1 to 14, wherein, The electrical insulator is composed of an electrically insulating thin film.

20. The electronic component according to any one of claims 1 to 14, wherein, The electrical insulator is composed of a silicon oxide film.

21. The electronic component according to any one of claims 1 to 14, wherein, The conductive resin layer contains multiple silver particles.

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