Process for fabricating positive trapezoidal glue shape by dry etching

Abstract

This invention discloses a dry etching process for fabricating trapezoidal resist shapes. The process steps are as follows: S1, remove the substrate and coat it with a non-photosensitive base coat to a set target thickness; S2, coat a photoresist layer on top of the non-photosensitive base coat, with the photoresist layer being thicker than the non-photosensitive base coat; S3, after the two layers of resist are coated, use exposure, development, and hardening to form the upper photoresist layer into a resist shape with trapezoidal or inverted trapezoidal grooves, exposing the non-photosensitive base coat that needs to be removed; S4, use a dry etching process to dry etch the upper photoresist layer and the exposed non-photosensitive base coat together; S5, after dry etching, remove the residual photoresist on top of the non-photosensitive base coat using a resist remover, finally obtaining a trapezoidal or inverted trapezoidal resist product, completing the dry etching process for fabricating trapezoidal resist shapes. This invention achieves patterning processing of resist shapes that are trapezoidal or inverted trapezoidal with a slope angle of less than or equal to 45°.

Description

Technical Field

[0001] This invention relates to the field of semiconductor dry etching processes, and more particularly to a process for dry etching to fabricate trapezoidal photoresist. Background Technology

[0002] The semiconductor industry is currently developing rapidly, and the market demand for semiconductor devices is increasing, with semiconductors becoming more and more diverse. One type of component involves semiconductor devices coated with non-photosensitive adhesive on silicon substrates. These devices require the non-photosensitive adhesive to be in a trapezoidal shape with a 45° bevel angle. However, conventional photolithography cannot process non-photosensitive adhesive shapes, and while dry etching alone can perform patterning, the resulting adhesive shape is typically rectangular or has a bevel angle close to 90°. To solve this problem, this application proposes a method combining dry etching and photolithography that allows for patterning of non-photosensitive adhesive while maintaining a trapezoidal adhesive shape. Summary of the Invention

[0003] To solve the above-mentioned technical problems, this invention designs a dry etching process for fabricating trapezoidal gel shapes, so that the final gel shape is a regular trapezoid or an inverted trapezoid with a slope angle of less than or equal to 45°.

[0004] The present invention adopts the following technical solution:

[0005] A dry etching process for fabricating trapezoidal gel molds, comprising the following steps:

[0006] S1. Remove the substrate and coat it with a non-photosensitive undercoat to achieve the set target thickness.

[0007] S2. Coat another layer of photoresist on top of the non-photosensitive base coat, with the photoresist being thicker than the non-photosensitive base coat.

[0008] S3. After the two layers of photoresist are coated, the upper photoresist is made into a shape with a trapezoidal or inverted trapezoidal groove by exposure, development and hardening, and the non-photosensitive bottom layer photoresist that needs to be removed is exposed.

[0009] S4. A dry etching process is used to dry etch the upper photoresist and the exposed non-photosensitive underlayer resist together.

[0010] S5. After dry etching, the residual photoresist on the non-photosensitive bottom layer is removed by stripping solution, and finally a trapezoidal or inverted trapezoidal product is obtained, completing the dry etching process for making a trapezoidal product.

[0011] Preferably, in step S4, the parameters of the dry etching are adjusted so that the dry etching rate of the upper dry resist is consistent with the dry etching rate of the non-photosensitive bottom resist.

[0012] Preferably, the bevel angle of the trapezoidal or inverted trapezoidal groove is less than or equal to 45°.

[0013] Preferably, the non-photosensitive undercoat is uniformly coated onto the substrate by spin coating.

[0014] Preferably, the photoresist is uniformly coated onto a non-photosensitive underlayer by spin coating.

[0015] The beneficial effects of this invention are: This invention combines dry etching and coating exposure and development processes, making the processing of resist more diversified, expanding the application field of dry etching machines, and realizing the patterning of resist shapes that are upright or inverted trapezoids with a slope angle of less than or equal to 45°. Attached Figure Description

[0016] Figure 1 This is a schematic diagram of one structure of the substrate in this invention;

[0017] Figure 2 This is a schematic diagram of a structure in which a non-photosensitive underlayer adhesive is coated on a substrate according to the present invention;

[0018] Figure 3 yes Figure 2 A schematic diagram of a structure after a non-photosensitive base layer is coated with a layer of photoresist and exposed, developed and hardened;

[0019] Figure 4 yes Figure 3 A schematic diagram of a structure after dry etching of the upper photoresist layer and the exposed non-photosensitive underlayer resist;

[0020] Figure 5 yes Figure 4 A schematic diagram of a structure in which the upper layer of photoresist is removed after medium-dry etching;

[0021] In the diagram: 1. Substrate, 2. Non-photosensitive underlayer adhesive, 3. Photoresist. Implementation

[0022] The technical solution of the present invention will be further described in detail below through specific embodiments and in conjunction with the accompanying drawings:

[0023] Example: A dry etching process for fabricating a trapezoidal gel mold, the process steps of which are as follows:

[0024] S1, such as Figure 1 As shown, substrate 1 is removed, and a layer of non-photosensitive undercoat adhesive 2 is coated on the substrate to achieve the set target thickness, as shown. Figure 2 As shown;

[0025] S2. Coat another layer of photoresist 3 on top of the non-photosensitive base layer. The thickness of the photoresist is greater than that of the non-photosensitive base layer.

[0026] S3. After the two layers of photoresist are coated, the upper photoresist is formed into a shape with trapezoidal grooves using exposure, development, and hardening methods, exposing the non-photosensitive underlying photoresist that needs to be removed, such as... Figure 3 As shown;

[0027] S4. A dry etching process is used to dry etch both the upper photoresist layer and the exposed non-photosensitive underlayer resist together, such as... Figure 4 As shown;

[0028] S5. After dry etching, the residual photoresist on the non-photosensitive bottom layer is removed using a stripping solution, ultimately yielding a trapezoidal product. Figure 5 As shown, the process of dry etching to fabricate a trapezoidal gel mold is completed.

[0029] In step S4, the parameters of the dry etching are adjusted so that the dry etching rate of the upper dry resist is consistent with the dry etching rate of the non-photosensitive bottom resist.

[0030] The bevel angle of the trapezoidal notch is less than or equal to 45°. The non-photosensitive underlayer adhesive is uniformly coated onto the substrate using spin coating. The photoresist is uniformly coated onto the non-photosensitive underlayer adhesive using spin coating.

[0031] This invention combines dry etching and coating exposure and development processes, making the processing of resist more diversified, expanding the application field of dry etching machines, and realizing the patterning of resist shapes that are upright or inverted trapezoids with a slope angle of less than or equal to 45°.

[0032] The embodiments described above are merely preferred embodiments of the present invention and are not intended to limit the present invention in any way. Other variations and modifications may be made without departing from the technical solutions described in the claims.

Claims

1. A dry etching process for fabricating trapezoidal gel shapes, characterized in that, The process steps are as follows: S1. Remove the substrate and coat it with a non-photosensitive undercoat to achieve the set target thickness. S2. Coat another layer of photoresist on top of the non-photosensitive base coat, with the photoresist being thicker than the non-photosensitive base coat. S3. After the two layers of photoresist are coated, the upper photoresist is made into a shape with a trapezoidal or inverted trapezoidal groove by exposure, development and hardening, and the non-photosensitive bottom layer photoresist that needs to be removed is exposed. S4. A dry etching process is used to dry etch the upper photoresist and the exposed non-photosensitive underlayer resist together. S5. After dry etching, the residual photoresist on the non-photosensitive bottom layer is removed by stripping solution, and finally a trapezoidal or inverted trapezoidal product is obtained, completing the dry etching process for making a trapezoidal product. In step S4, the parameters of dry etching are adjusted so that the dry etching rate of the upper dry resist is consistent with the dry etching rate of the non-photosensitive bottom resist. The angle of the inclined plane of the trapezoidal or inverted trapezoidal groove is less than or equal to 45°.

2. The process for dry etching to fabricate a trapezoidal gel shape according to claim 1, characterized in that, The non-photosensitive undercoat is uniformly coated onto the substrate by spin coating.

3. The process for dry etching to fabricate a trapezoidal gel shape according to claim 1, characterized in that, The photoresist is uniformly coated onto the non-photosensitive underlayer using a spin coating method.

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