Glass, glass-ceramic and laminated ceramic electronic components

By adjusting the proportions of SiO2, B2O3, Al2O3, and ZnO, and combining them with by-components such as Li2O, low-boron-content glass ceramics were prepared. This solved the problems of insufficient sintering and high dielectric loss caused by boron volatilization, and achieved glass ceramic materials with low dielectric constant and low dielectric loss.

CN116133997BActive Publication Date: 2025-11-21MURATA MFG CO LTD
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Patent Information

Application Number
CN202180043409.X
Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Priority Date
2020-11-19
Filing Date
2021-06-14
Publication Date
2025-11-21
Estimated Expiration
2041-06-14

AI Technical Summary

Technical Problem

Existing glass compositions for low-temperature calcined substrates have high boron content, which leads to boron volatilization, affecting glass viscosity and moisture resistance, resulting in incomplete sintering, quality degradation, and high dielectric loss.

Method used

A glass-ceramic with low dielectric loss is formed by using a glass composition with low boron content, a SiO2 to B2O3 weight ratio (SiO2/B2O3) of 1.21 or higher, an Al2O3 to ZnO weight ratio (Al2O3/ZnO) of 0.75 to 1.64, and adding by-products such as Li2O.

Benefits of technology

This technology enables the production of glass materials with low boron content, reducing dielectric loss and dielectric constant, avoiding incomplete sintering caused by boron volatilization, and improving resistance to plating solutions and mechanical strength.

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Abstract

A glass containing Si, B, Al and Zn, the content of SiO2 being 15 to 65 wt%, the content of B2O3 being 11 to 30 wt%, the weight ratio of SiO2 to B2O3 (SiO2 / B2O3) being 1.21 or more, and the weight ratio of Al2O3 to ZnO (Al2O3 / ZnO) being 0.75 to 1.64.
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Description

Technical Field

[0001] This invention relates to glass, glass ceramics, and laminated ceramic electronic components. Background Technology

[0002] As a ceramic material used in ceramic multilayer wiring substrates, glass-ceramic materials that can be calcined at low temperatures are known.

[0003] For example, Patent Document 1 discloses a glass composition for a low-temperature calcined substrate with a basic composition of RO-Al2O3-B2O3-SiO2 (wherein RO is one or more of MgO, CaO, SrO, BaO, and ZnO), RO and Al2O3 are both in the range of 1 to 25 mol%, and the mol% ratio of SiO2 / B2O3 is less than 1.3, as well as a glass ceramic containing a core material in the glass composition for the low-temperature calcined substrate.

[0004] Existing technical documents

[0005] Patent documents

[0006] Patent Document 1: Japanese Patent Application Publication No. 2004-26529. Summary of the Invention

[0007] The glass-ceramic described in Patent Document 1 can achieve 20×10 at 3GHz. -4 The following are excellent dielectric losses.

[0008] However, the SiO2 / B2O3 mol% ratio in the low-temperature calcination substrate glass composition described in Patent Document 1 is less than 1.3, resulting in a high boron content. Glass compositions with such a high boron composition suffer from unstable boron content. Specifically, boron dissolves from the solvent during mixing and pulverization, and volatilizes during calcination. This dissolution and volatilization reduces the boron content, leading to decreased glass viscosity and incomplete sintering during calcination. Furthermore, the chemical properties of the glass after boron dissolution and volatilization are unstable, resulting in reduced moisture resistance and plating solution resistance, potentially leading to a decline in quality.

[0009] Therefore, a glass material with low boron content and low dielectric loss is sought.

[0010] The purpose of this invention is to solve the above-mentioned problems and to provide a glass with low boron content and low dielectric loss.

[0011] The glass of the present invention is characterized in that it contains Si, B, Al and Zn, wherein the content of SiO2 is 15% to 65% by weight, the content of B2O3 is 11% to 30% by weight, the weight ratio of SiO2 to B2O3 (SiO2 / B2O3) is 1.21 or more, and the weight ratio of Al2O3 to ZnO (Al2O3 / ZnO) is 0.75 to 1.64.

[0012] The glass-ceramic of the present invention is characterized by containing 45% to 100% by weight of the glass of the present invention.

[0013] The laminated ceramic electronic component of the present invention is characterized by having multiple glass-ceramic layers of the sintered glass-ceramic body of the present invention.

[0014] According to the present invention, it is possible to provide glass with low boron content and simultaneously low dielectric constant and low dielectric loss, glass ceramic containing the above-mentioned glass, and laminated ceramic electronic components having multiple glass ceramic layers composed of a sintered body of the above-mentioned glass ceramic. Attached Figure Description

[0015] Figure 1 The diagram shown is a cross-sectional schematic of an example of a laminated ceramic electronic component of the present invention.

[0016] Figure 2 As shown Figure 1 A schematic cross-sectional view of the stacked green blanks (uncalcined state) produced during the manufacturing process of the stacked ceramic electronic components. Detailed Implementation

[0017] The glass, glass-ceramic, and laminated ceramic electronic components of the present invention will now be described. It should be noted that the present invention is not limited to the following configurations, and appropriate variations can be made without departing from the spirit of the invention. Furthermore, combining multiple preferred configurations described below also falls within the scope of the present invention.

[0018] [Glass]

[0019] The glass of the present invention is characterized in that it contains Si, B, Al and Zn, wherein the content of SiO2 is 15% to 65% by weight, the content of B2O3 is 11% to 30% by weight, the weight ratio of SiO2 to B2O3 (SiO2 / B2O3) is 1.21 or more, and the weight ratio of Al2O3 to ZnO (Al2O3 / ZnO) is 0.75 to 1.64.

[0020] B2O3 in glass helps reduce its viscosity. Therefore, the sintered body of glass-ceramics is dense.

[0021] The glass of the present invention has a low proportion of B2O3 because the B2O3 content is 11% to 30% by weight and the weight ratio of SiO2 to B2O3 (SiO2 / B2O3) is 1.21 or higher. Furthermore, boron is less likely to dissolve and volatilize from the glass, thus reducing the problems of incomplete sintering and reduced resistance to plating solutions. The B2O3 content in the glass of the present invention is preferably 15% to 30% by weight.

[0022] The SiO2 content in the glass of the present invention is 15% to 65% by weight, preferably 20% to 60% by weight.

[0023] In the glass-ceramic containing the glass of the present invention, the presence of 15% to 65% SiO2 during sintering helps to reduce the dielectric constant. As a result, parasitic capacitances associated with high-frequency electrical signals are suppressed.

[0024] When the SiO2 content exceeds 65% by weight, sintering below 1000℃ becomes difficult and ZnAl2O4 crystallization precipitation becomes difficult. However, when the SiO2 content is below 65% by weight, the above problems do not occur.

[0025] On the other hand, when the SiO2 content is less than 15% by weight, the excessive reduction in viscosity makes glass transition difficult.

[0026] The weight ratio of SiO2 to B2O3 (SiO2 / B2O3) is 1.21 or higher. When the weight ratio of SiO2 to B2O3 (SiO2 / B2O3) is within the above range, boron is less likely to dissolve and volatilize from the glass.

[0027] The weight ratio of SiO2 to B2O3 (SiO2 / B2O3) is preferably 5.91 or less, and more preferably 4 or less.

[0028] When the weight ratio of SiO2 to B2O3 (SiO2 / B2O3) is less than 1.21, there is too much B2O3 relative to SiO2, which can easily cause the dissolution and volatilization of boron.

[0029] Al2O3 in glass helps improve its chemical stability.

[0030] In glass, Zn and Al combine to form ZnAl2O4.

[0031] The glass of the present invention contains Al and Zn. When the glass contains Al and Zn, it facilitates the precipitation of ZnAl2O4 crystals with low loss from the glass.

[0032] When the weight ratio of Al2O3 to ZnO (Al2O3 / ZnO) is 0.75 to 1.64, the content of ZnAl2O4 in the glass will fall within the preferred range.

[0033] When the weight ratio of Al2O3 to ZnO (Al2O3 / ZnO) is less than 0.75, there is too much ZnO, which reduces the reciprocal Q value of the dielectric loss. On the other hand, when the weight ratio of Al2O3 to ZnO (Al2O3 / ZnO) exceeds 1.64, there is too much Al2O3, which increases the viscosity of the glass and makes it impossible to obtain a dense sintered body.

[0034] The weight ratio of Al2O3 to ZnO (Al2O3 / ZnO) can also be 0.75 to 1.63.

[0035] The glass of the present invention may also contain secondary components.

[0036] The glass of the present invention may also contain Li as a secondary component. The Li₂O content is preferably 0.05% to 1% by weight.

[0037] Li₂O in glass helps reduce its viscosity. When glass contains Li₂O, its sinterability is improved.

[0038] When a specified amount of Li2O is contained, for example, in a glass ceramic containing the glass of the present invention, when the aggregate is 40% by weight, good sinterability and low dielectric loss can be obtained.

[0039] The glass of the present invention may also contain other byproducts besides Li.

[0040] As other secondary components, they are preferably selected from at least one of alkali metals, alkaline earth metals, and other metals.

[0041] As an alkali metal, it is preferred to contain at least one of Na and K.

[0042] As an alkaline earth metal, it is preferred to contain at least one of Be, Mg, Ca, Sr and Ba.

[0043] As for other metals, it is preferred to contain at least one of Ti, Zr and Sn.

[0044] The total content of the aforementioned by-products is preferably 0.05% to 5% of the total weight of the glass, more preferably 0.1% to 5% by weight. The total content of by-products refers to the total content of Li-containing by-products and other by-products. When the specified amount of by-products is present, it helps to promote the crystallization of the glass and reduce dielectric loss.

[0045] [Glass and Ceramics]

[0046] The glass-ceramic of the present invention is characterized by containing 45% to 100% by weight of the glass of the present invention.

[0047] Because the glass-ceramic of the present invention contains 45% by weight or more of the glass of the present invention, it can achieve low dielectric constant and low dielectric loss. Furthermore, because the glass-ceramic of the present invention contains 45% by weight or more of the glass of the present invention, it is less prone to problems such as incomplete sintering and reduced resistance to plating solutions caused by the dissolution and volatilization of boron.

[0048] Furthermore, the glass-ceramic of the present invention preferably contains 50% to 100% by weight of the glass of the present invention.

[0049] The glass-ceramic of this invention is a low-temperature co-fired ceramic (LTCC) material. In this specification, "low-temperature co-fired ceramic material" refers to a glass-ceramic material that can be sintered at a calcination temperature below 1000°C.

[0050] The glass-ceramic of the present invention may further include a bone material.

[0051] As a material, at least one compound selected from SiO2, TiO2, ZnO2, ZrO2, Al2O3 and BaO can be cited.

[0052] In the glass-ceramic of the present invention, when it contains aggregate, the glass content is preferably 45% by weight or more and less than 100% by weight, more preferably 50% by weight or more and less than 100% by weight.

[0053] SiO2 used as the backbone material is preferably quartz and / or amorphous silicon.

[0054] Quartz contributes to increasing the coefficient of thermal expansion during the sintering of glass-ceramics. Since the coefficient of thermal expansion of quartz is approximately 15 ppm / K compared to approximately 6 ppm / K for glass, the inclusion of quartz in the glass-ceramic results in a high coefficient of thermal expansion during sintering. Consequently, compressive stress is generated during the cooling process after sintering, increasing mechanical strength (e.g., flexural strength). Furthermore, this improves the reliability of mounting on a substrate (e.g., a resin substrate).

[0055] Al₂O₃ and ZrO₂, acting as aggregates, can prevent the precipitation of cristobalite crystals during the sintering of glass-ceramics. Crizobalite crystals are a type of SiO₂ crystal and undergo a phase transition at approximately 280°C. Therefore, if cristobalite crystals precipitate during the sintering process of glass-ceramics, the volume change at high temperatures will be significant, reducing reliability. From this perspective, glass-ceramics are preferably free of cristobalite crystals. Here, "free of cristobalite crystals" means that the content of cristobalite crystals is below the detection limit. Whether cristobalite crystals have precipitated can be confirmed by crystal structure analysis such as X-ray diffraction (XRD).

[0056] In addition, Al2O3 and ZrO2, as aggregates, contribute to low dielectric loss, high coefficient of thermal expansion and high mechanical strength during the sintering of glass ceramics.

[0057] TiO2, as a core material, has a large negative relative temperature coefficient of permittivity (TCC), which can adjust the TCC of glass ceramics.

[0058] ZnO, as a reinforcing agent, can improve sinterability. Additionally, it can help mitigate the volatilization of ZnO components in the glass.

[0059] BaO, as a component of the aggregate, acts as a combustion aid.

[0060] BaO can also be added as a compound containing Ba and O, such as BaCO3, BaZrO3, and Si-B-Ba-O glass.

[0061] It should be noted that in glass-ceramics, the glass and the material can be distinguished by analyzing the electron diffraction pattern using a transmission electron microscope (TEM).

[0062] Furthermore, the content of the aggregate is calculated by converting the weight of the elements constituting the aggregate (excluding oxygen) into oxides and dividing by the total weight of the glass ceramic. Therefore, when BaZrO3 is added as an aggregate, both BaO and ZrO2 are included as aggregates.

[0063] [Laminated Ceramic Electronic Components]

[0064] The laminated ceramic electronic component of the present invention is characterized by having multiple glass-ceramic layers of the sintered glass-ceramic body of the present invention.

[0065] Examples of the multilayer ceramic electronic components of the present invention include, for example, a multilayer having a plurality of glass-ceramic layers of the glass-ceramic sintered body of the present invention, and an electronic component having a multilayer ceramic substrate using the multilayer and a chip component mounted on the multilayer ceramic substrate.

[0066] The laminated ceramic electronic component of the present invention has a low dielectric constant and low dielectric loss because it has multiple glass-ceramic layers of the glass-ceramic sintered body of the present invention.

[0067] A laminate containing multiple glass-ceramic layers of the glass-ceramic sintered body of the present invention can, for example, be used in communication ceramic multilayer substrates and laminated dielectric filters.

[0068] The coefficient of thermal expansion of the glass-ceramic layer is preferably above 6 ppm / K.

[0069] The relative permittivity of the glass-ceramic layer is preferably 5.5 or less.

[0070] The Q value of the glass-ceramic layer is preferably above 1000.

[0071] The temperature characteristic (TCC) of the relative permittivity of the glass-ceramic layer is preferably -60ppm / K to +60ppm / K.

[0072] Figure 1 This is a cross-sectional schematic diagram of an example of a stacked ceramic electronic component of the present invention. For example... Figure 1 As shown, electronic component 2 comprises multiple glass-ceramic layers 3 ( Figure 1 The laminate consists of a stacked body 1 (5 layers) and chip components 13 and 14 mounted on the stacked body 1. The stacked body 1 is also a stacked ceramic substrate.

[0073] The glass-ceramic layer 3 is a sintered body of the glass-ceramic material of the present invention. Therefore, the laminate 1 consisting of multiple glass-ceramic layers 3, the laminated ceramic substrate using the laminate 1, and the electronic components 2 consisting of chip components 13 and 14 mounted on the laminated ceramic substrate (laminated body 1) are also laminated ceramic electronic components of the present invention. The composition of the multiple glass-ceramic layers 3 may be the same or different from each other, but is preferably the same.

[0074] The laminate 1 may further have a conductor layer. The conductor layer may, for example, constitute passive components such as capacitors and inductors, or serve as wiring for electrical connections between components. Such a conductor layer includes, for example... Figure 1 Conductor layers 9, 10, 11 and via conductor layer 12 are shown.

[0075] Conductor layers 9, 10, and 11, and via conductor layer 12 preferably contain Ag or Cu as the main component. By using such a low-resistance metal, signal propagation delay associated with the high-frequency increase of electrical signals is prevented. Furthermore, since the glass-ceramic material of the present invention, i.e., the low-temperature co-fired ceramic material, is used as the structural material of the glass-ceramic layer 3, it is possible to simultaneously calcine with Ag and Cu.

[0076] The conductor layer 9 is disposed inside the laminate 1. Specifically, the conductor layer 9 is disposed at the interface between the glass-ceramic layers 3.

[0077] The conductor layer 10 is disposed on one of the main surfaces of the laminate 1.

[0078] Conductor layer 11 is disposed on another main surface of laminate 1.

[0079] The through-hole conductor layer 12 is disposed on the glass-ceramic layer 3 in a through manner, which serves to electrically connect the conductor layers 9 of each layer to each other, or to electrically connect conductor layers 9 and 10, or to electrically connect conductor layers 9 and 11.

[0080] Laminated body 1, for example, is manufactured as follows.

[0081] (A) Glass preparation

[0082] The glass of the present invention is prepared by mixing SiO2, B2O3, Al2O3, and ZnO with optional by-products, wherein the SiO2 content is 15% to 65% by weight, the B2O3 content is 11% to 30% by weight, the SiO2 to B2O3 weight ratio (SiO2 / B2O3) is 1.21 or higher, and the Al2O3 to ZnO weight ratio (Al2O3 / ZnO) is 0.75 to 1.64. In the above glass, the SiO2 content is preferably 20% to 60% by weight. In the above glass, the B2O3 content is preferably 15% to 30% by weight.

[0083] (B) Preparation of glass ceramics

[0084] The glass-ceramic of the present invention is prepared by mixing the bone material with the glass of the present invention as needed.

[0085] Glass ceramics are prepared by using glass containing 45% to 100% by weight of the glass of the present invention.

[0086] (C) Production of raw blanks

[0087] The glass-ceramic of the present invention is mixed with an adhesive, a plasticizer, etc., to prepare a ceramic slurry. Then, the ceramic slurry is formed on a substrate film (e.g., polyethylene terephthalate (PET) film) and dried to produce a green sheet.

[0088] (D) Fabrication of stacked green sheets

[0089] Layered green sheets (uncalcined state) are produced by stacking green sheets. Figure 2 The image shown is in Figure 1 A schematic cross-sectional view of the stacked green blanks (unfired state) produced during the manufacturing process of stacked ceramic electronic components. (See diagram below.) Figure 2 As shown, the stacked green sheet 21 consists of multiple green sheets 22 ( Figure 2 The green sheet 22 is composed of 5 layers stacked together. After calcination, the green sheet 22 becomes the glass-ceramic layer 3. A conductor layer containing conductor layers 9, 10, and 11 and a through-hole conductor layer 12 can also be formed on the stacked green sheet 21. The conductor layer can be formed using a conductive paste containing Ag or Cu and by methods such as screen printing and photolithography.

[0090] (E) Calcination of stacked green blanks

[0091] Calcination of stacked green blanks 21. The result is as follows: Figure 1 The stacked body 1 is shown.

[0092] The calcination temperature of the stacked green sheet 21 is not particularly limited as long as it is the sinterable temperature of the glass ceramic of the present invention constituting the green sheet 22. For example, it can be below 1000°C.

[0093] The calcination atmosphere of the stacked green sheet 21 is not particularly limited, but when using materials that are not easily oxidized, such as Ag, as conductor layers 9, 10, 11 and through-hole conductor layer 12, an air atmosphere is preferred, and when using materials that are easily oxidized, such as Cu, a low-oxygen atmosphere, such as a nitrogen atmosphere, is preferred. In addition, the calcination atmosphere of the stacked green sheet 21 can also be a reducing atmosphere.

[0094] It should be noted that the stacked green sheet 21 can also be calcined while being held in place by a constraining green sheet. The constraining green sheet contains inorganic materials (e.g., Al2O3) that are substantially non-sintering at the sintering temperature of the glass-ceramic of the present invention constituting the green sheet 22 as its main component. Therefore, the constraining green sheet does not shrink during the calcination of the stacked green sheet 21, thus suppressing shrinkage relative to the stacked green sheet 21 in the direction of the main surface. As a result, the dimensional accuracy of the obtained laminate 1 (particularly conductor layers 9, 10, 11 and through-hole conductor layer 12) is improved.

[0095] Chip components 13 and 14 can be mounted on the laminate 1 while being electrically connected to the conductor layer 10. Thus, an electronic component 2 having the laminate 1 is constituted.

[0096] Examples of chip components 13 and 14 include LC filters, capacitors, and inductors.

[0097] Electronic component 2 can also be electrically connected via conductor layer 11 and mounted on mounting substrate (e.g., motherboard).

[0098] Example

[0099] The following provides more specific embodiments of the glass, glass-ceramic, and laminated ceramic electronic components of the present invention. It should be noted that the present invention is not limited to these embodiments.

[0100] (A) Glass preparation

[0101] Glass powders (G1 to G41) with the compositions shown in Table 1 were prepared according to the following method. First, the glass raw material powders were mixed and placed in a Pt-Rh crucible, and melted at 1650°C for at least 6 hours in air. Then, the resulting melt was rapidly cooled to produce glass shavings. The glass shavings were then coarsely pulverized and mixed with an organic solvent and PSZ balls (5 mm in diameter) in a container using a ball mill. During mixing in the ball mill, the grinding time was adjusted to obtain glass powder with a central particle size of 1.5 μm. Here, "central particle size" refers to the central particle size D measured using laser diffraction and scattering. 50 .

[0102] Table 1

[0103]

[0104] Glasses G26 to G29, G31, G32 and G41 are not the glass types of this invention.

[0105] The B2O3 content in glass G26 exceeds 30% by weight.

[0106] The B2O3 content in glass G27 is less than 11% by weight.

[0107] The weight ratio of Al2O3 to ZnO in glass G28 (Al2O3 / ZnO) is less than 0.75.

[0108] The weight ratio of Al2O3 to ZnO in glass G29 (Al2O3 / ZnO) exceeds 1.64.

[0109] The SiO2 content in glass G31 ranges from 15% to 65% by weight, the B2O3 content ranges from 11% to 30% by weight, and the weight ratio of SiO2 to B2O3 (SiO2 / B2O3) is less than 1.21.

[0110] The SiO2 content in glass G32 ranges from 15% to 65% by weight, the B2O3 content ranges from 11% to 30% by weight, and the weight ratio of SiO2 to B2O3 (SiO2 / B2O3) is less than 1.21.

[0111] The SiO2 content in glass G41 exceeds 65% by weight.

[0112] (B) Preparation of glass ceramics

[0113] Next, with the composition shown in Table 2, and after adding aggregate as needed to the glass of the present invention, it was placed in ethanol and mixed using a ball mill to prepare a glass ceramic. It should be noted that the SiO2 in the aggregate is quartz.

[0114] (C) Production of raw blanks

[0115] A ceramic slurry was prepared by mixing glass ceramics, a binder solution of polyvinyl butyral dissolved in ethanol, and a solution of dioctyl phthalate (DOP) as a plasticizer. The ceramic slurry was then formed onto a polyethylene terephthalate film using a scraper and dried at 40°C to produce green sheets S1–S33 and S35–S47 with a thickness of 25 μm.

[0116] It should be noted that for glass G31, the subsequent processes of green sheet production are not carried out due to the gelation of the ceramic slurry.

[0117] (D) Fabrication of stacked green sheets

[0118] Next, for green blanks S1 to S33 and S35 to S47, the green blanks are cut into rectangles of 78mm × 58mm respectively. After stacking 30 pieces, they are placed in a mold and pressed together using a press. The side is then cut into a square with a top view size of 50mm to produce stacked green blanks.

[0119] (E) Calcination of stacked green blanks

[0120] In a reducing atmosphere, the stacked green sheets were calcined at 980°C for 60 minutes. The resulting sintered body was a stack of multiple glass-ceramic layers, L1–L33 and L35–L47, containing a glass-ceramic sintered body.

[0121] [Determination of relative permittivity and dielectric loss]

[0122] The thicknesses of the obtained laminates L1–L33 and L35–L47 were measured, and the relative permittivity and dielectric loss were determined using a perturbation method at 6 GHz. The Q value was then calculated as the reciprocal of the measured dielectric loss. The results are shown in Table 2.

[0123] It should be noted that a relative permittivity of 5.5 or below is considered good, and a Q value of 1000 or above is considered good. It should also be noted that, as mentioned in the notes of Table 2, laminates L6, L29, L30, L32, L35, and L47 are incompletely sintered.

[0124] The measuring apparatus and measuring conditions are as follows.

[0125] Network Analyzer: Keysight 8757D

[0126] Signal generator: Keysight synthetic scanner 83751

[0127] Resonator: Homemade clamp (Resonance frequency: 6GHz)

[0128] It should be noted that cable loss was measured by connecting a network analyzer and a signal generator before the measurement. Additionally, the resonator was calibrated using a standard substrate (quartz, dielectric constant: 3.73, Q value: 4545 @ 6 GHz, thickness: 0.636 mm).

[0129] [Table 2]

[0130]

[0131] As shown in Table 2, the glass-ceramic layer laminate of the glass-ceramic sintered body of the present invention, despite using glass with a B2O3 content of 30% by weight or less, exhibits a low relative permittivity and a high Q value (low dielectric loss). Furthermore, no problems of boron dissolution and volatilization occur.

[0132] The content of glass G4 in laminate L6 is less than 45% by weight, which is considered to be the cause of poor sintering.

[0133] The use of glass G26 with a B2O3 content exceeding 30% by weight in laminate L29 is believed to be due to the leaching and volatilization of boron during the manufacturing process.

[0134] The glass G27 with a B2O3 content of less than 11% by weight was used in the laminate L30. The viscosity of the glass was not sufficiently reduced, which is considered to be the cause of poor sintering.

[0135] In the L32 laminate, glass G29 with an Al2O3 to ZnO weight ratio (Al2O3 / ZnO) greater than 1.64 was used. The excessive Al2O3 increased the viscosity of the glass, which is considered to be the reason why a dense sintered body could not be obtained.

[0136] The use of glass G41 with a SiO2 content exceeding 65% by weight in laminate L47 is believed to be due to insufficient sintering at 980°C.

[0137] The weight ratio of SiO2 to B2O3 in glass G31 (SiO2 / B2O3) is less than 1.21, which causes the ceramic slurry to gel at 980℃, making it impossible to form a laminate.

[0138] The use of glass G32 in laminate L35 with a SiO2 to B2O3 weight ratio (SiO2 / B2O3) of less than 1.21 is believed to be due to boron leaching and volatilization during the manufacturing process.

[0139] The L31 laminate did not exhibit incomplete sintering or ceramic slurry gelation, but its Q value was less than 1000, and its dielectric loss was high. The use of glass G28 with an Al2O3 to ZnO weight ratio (Al2O3 / ZnO) of less than 0.75 in the L31 laminate is considered to be the reason for the reduced Q value.

[0140] The L41 laminate did not exhibit incomplete sintering or ceramic slurry gelation, but its Q value was less than 1000, and its dielectric loss was high. The use of less than 45% by weight of glass G36 in the L41 laminate is considered to be the reason for the reduced Q value.

[0141] [Symbol Explanation]

[0142] 1. Layered body

[0143] 2 Electronic components

[0144] 3. Glass-ceramic layer

[0145] Conductor layers 9, 10, and 11

[0146] 12 Through-hole conductor layer

[0147] Chip components 13 and 14

[0148] 21-layer stacked green sheet

[0149] 22 green blanks

Claims

1. A glass-ceramic, characterized in that, Contains more than 45% by weight and less than 100% by weight of glass and bone. The glass contains Si, B, Al, and Zn. The SiO2 content is 55% to 65% by weight. The B2O3 content is 11% to 30% by weight. The weight ratio of SiO2 to B2O3, SiO2 / B2O3, is greater than 1.

21. The weight ratio of Al2O3 to ZnO (Al2O3 / ZnO) is 0.75–1.

64. Furthermore, it contains no alkaline earth metals, and no copper halides, antimony, arsenic, or fluorine.

2. The glass-ceramic according to claim 1, wherein, The B2O3 content is 18.8% to 30% by weight.

3. The glass-ceramic according to claim 1, wherein, It does not contain Li as a byproduct.

4. The glass-ceramic according to claim 1, wherein, It further contains Li as a by-product, with Li2O content ranging from 0.05% to 1% by weight.

5. The glass-ceramic according to any one of claims 1 to 4, wherein, It further contains at least one metal selected from alkali metals and other metals as a secondary component. The alkali metal contains at least one of Na and K. The other metals contain at least one of Ti, Zr, and Sn.

6. The glass-ceramic according to any one of claims 1 to 4, wherein, The bone material contains at least one compound selected from SiO2, TiO2, ZnO2, ZrO2, Al2O3 and BaO.

7. The glass-ceramic according to any one of claims 1 to 4, comprising 65% by weight or more and less than 100% by weight of the glass.

8. A laminated ceramic electronic component, characterized in that, It comprises multiple glass-ceramic layers, wherein the glass-ceramic layers are sintered bodies of glass-ceramics as described in any one of claims 1 to 7.

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