Atomic layer deposition equipment

Abstract

The present invention discloses an atomic layer deposition device, including a substrate rack, a reaction chamber and a driving mechanism, wherein the side of the reaction chamber has a first gas chamber and a second gas chamber arranged alternately in the circumferential direction, at least two exhaust chambers and at least one purge chamber are provided between adjacent first gas chambers and second gas chambers, and the driving mechanism supports and drives the substrate rack to rotate. In each coating cycle of the present invention, in the process from the first reaction gas entering the reaction chamber to the second reaction gas entering the reaction chamber, or from the second reaction gas entering the reaction chamber to the first reaction gas entering the reaction chamber, it is necessary to pass through one of the exhaust chambers, the purge chamber, and the other exhaust chamber in sequence to ensure that the unadsorbed first reaction gas, the second reaction gas, or the excess product formed by the reaction of the two is discharged from the reaction chamber, which can reduce the cross contamination between the two, extend the maintenance cycle of the equipment, and improve the production efficiency of the equipment.

Description

Technical Field

[0001] The present invention relates to the technical field of atomic layer coating, and in particular to an atomic layer deposition device. Background Art

[0002] Atomic layer deposition (ALD) is a method of forming a thin film by alternately introducing two reaction gases into a reaction chamber and causing surface chemical reactions on a substrate. ALD has obvious advantages in terms of film uniformity, controllability of film thickness, and step coverage. In related technologies, the two reaction gases are easily combined inside the equipment to cross-react and produce pollutants or powder particles, which contaminate the internal components of the equipment, resulting in the need for frequent cleaning and maintenance of the equipment, affecting the production efficiency of the equipment. Summary of the invention

[0003] The present invention aims to solve at least one of the technical problems existing in the prior art. To this end, the present invention provides an atomic layer deposition device that can reduce cross contamination between reaction gases, extend the maintenance cycle of the device, and improve the production efficiency of the device.

[0004] An atomic layer deposition device according to an embodiment of the present invention includes:

[0005] The substrate rack is provided with a plurality of loading positions in the circumferential direction, and the loading positions are used to load the substrate to be plated;

[0006] A reaction chamber, wherein the substrate rack is accommodated inside the reaction chamber, a reaction chamber is defined between the substrate rack and the inner wall of the reaction chamber, a side portion of the reaction chamber has a first gas chamber and a second gas chamber alternately arranged along the circumferential direction, the first gas chamber is used to introduce a first reaction gas into the reaction chamber, the second gas chamber is used to introduce a second reaction gas into the reaction chamber, at least two exhaust chambers and at least one purge chamber are provided between adjacent first gas chambers and second gas chambers, and one of the purge chambers is located between adjacent exhaust chambers, the exhaust chamber is used to extract gas in the reaction chamber, and the purge chamber is used to introduce an inert gas into the reaction chamber;

[0007] The driving mechanism is connected to the end of the substrate frame along the axial direction of the substrate frame and is used to support and drive the substrate frame to rotate.

[0008] The atomic layer deposition device according to the embodiment of the present invention has at least the following beneficial effects:

[0009] In each coating cycle of the present invention, in the process from the first reaction gas being introduced into the reaction chamber to the second reaction gas being introduced into the reaction chamber, or in the process from the second reaction gas being introduced into the reaction chamber to the first reaction gas being introduced into the reaction chamber, it is necessary to pass through one of the exhaust chambers, the purge chamber, and the other exhaust chamber in sequence to ensure that the unadsorbed first reaction gas, the second reaction gas, or excess products formed by the reaction between the two are discharged from the reaction chamber, which can reduce cross contamination between the two, avoid pollutants formed by the reaction between the two from contaminating the equipment, extend the maintenance cycle of the equipment, and improve the production efficiency of the equipment.

[0010] According to some embodiments of the present invention, the reaction chamber has a first wall and a second wall which are nested in the radial direction, part of the substrate rack is located between the first wall and the second wall, and defines two reaction chambers with the first wall and the second wall respectively, loading positions are provided on both sides of the substrate rack in the radial direction, the loading positions are arranged toward the reaction chamber, and the first wall and the second wall are provided with the first gas chamber, the second gas chamber, the exhaust chamber and the purge chamber.

[0011] According to some embodiments of the present invention, the substrate rack includes a mounting portion and a loading portion, the mounting portion is connected to the end of the loading portion along the axial direction of the substrate rack, the loading portion is annular, the loading position is arranged on the loading portion, the driving mechanism includes a driving member, a portion of the driving member is inserted into the interior of the reaction chamber and connected to the mounting portion, and the driving member is used to drive the mounting portion to rotate.

[0012] According to some embodiments of the present invention, the substrate rack and the reaction chamber are arranged in a vertical direction, and the driving mechanism is arranged at the bottom or top of the substrate rack.

[0013] According to some embodiments of the present invention, the atomic layer deposition equipment also includes a support frame, the reaction chamber is installed on the support frame, the reaction chamber and the substrate frame are arranged in a horizontal direction, and the driving mechanism is arranged in a horizontal direction at one end of the substrate frame.

[0014] According to some embodiments of the present invention, the atomic layer deposition device further includes a gas filling mechanism, the loading portion has a containing chamber inside, the containing chamber is communicated with the reaction chamber, and the gas filling mechanism is used to fill the containing chamber with inert gas.

[0015] According to some embodiments of the present invention, the inflation mechanism includes an inflation tube, part of which is disposed through the mounting portion and inserted into the accommodating cavity;

[0016] Alternatively, part of the inflation tube is arranged inside the driving member and inserted into the accommodating cavity;

[0017] Alternatively, part of the inflation tube is arranged through an end of the reaction chamber away from the mounting portion and inserted into the accommodating cavity;

[0018] Alternatively, part of the inflation tube is installed on the loading portion and inserted into the accommodating cavity.

[0019] According to some embodiments of the present invention, the atomic layer deposition apparatus further comprises a gas filling mechanism, and there is a gap between the two axial ends of the substrate rack and the inner wall of the reaction chamber, and the gas filling mechanism is used to fill the gap with inert gas.

[0020] According to some embodiments of the present invention, the atomic layer deposition equipment further includes a heating mechanism, which is installed on the inner wall of the reaction chamber facing the substrate rack, and / or the heating mechanism is installed on the substrate rack and facing the loading position.

[0021] According to some embodiments of the present invention, the reaction chamber includes a chamber door and a chamber body, the chamber door is connected to the chamber body and is used to open or close the reaction chamber, and at least one of the first gas chamber, the second gas chamber, the purge chamber and the exhaust chamber is arranged on the chamber door.

[0022] According to some embodiments of the present invention, the atomic layer deposition apparatus further comprises a lining plate, and the lining plate is detachably connected to an inner wall of the reaction chamber facing the substrate rack.

[0023] According to some embodiments of the present invention, the atomic layer deposition equipment also includes an exhaust gas treatment mechanism, which includes a first exhaust pipe, a first exhaust pump, a second exhaust pipe and a second exhaust pump, the first exhaust pump is connected to the first exhaust pipe, the first exhaust pipe is connected to the exhaust cavity located on one side of the purge cavity, the second exhaust pump is connected to the second exhaust pipe, and the second exhaust pipe is connected to the exhaust cavity located on the other side of the corresponding purge cavity.

[0024] Additional aspects and advantages of the present invention will be given in part in the following description and in part will be obvious from the following description, or will be learned through practice of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS

[0025] The present invention will be further described below with reference to the accompanying drawings and embodiments, wherein:

[0026] Figure 1 A schematic diagram of an atomic layer deposition device according to an embodiment of the present invention;

[0027] Figure 2 for Figure 1 A schematic diagram of the operation of an embodiment of an atomic layer deposition device;

[0028] Figure 3 for Figure 1 A schematic diagram of a half-section of the atomic layer deposition equipment;

[0029] Figure 4 A schematic diagram of the arrangement of the cavities in the reaction chamber according to an embodiment;

[0030] Figure 5 is a schematic diagram of the arrangement of the cavities in the reaction chamber in another embodiment;

[0031] Figure 6 for Figure 3 Schematic diagram of the atomic layer deposition equipment in another direction;

[0032] Figure 7 for Figure 1 The enlarged view of point A in the middle;

[0033] Figure 8 FIG. 4 is a schematic diagram of another embodiment of an atomic layer deposition apparatus according to the present invention.

[0034] Reference numerals:

[0035] The substrate rack 100, the loading position 110, the reaction chamber 120, the partition 130, the mounting portion 140, the loading portion 150, the accommodating chamber 151; the reaction chamber 200, the first gas chamber 210, the second gas chamber 220, the exhaust chamber 230, the purge chamber 240, the first wall 250, the second wall 260, the liner 270, the chamber door 280, the chamber body 290; the driving mechanism 300, the driving member 310; the supply system 400, the first reaction gas supply pipeline 410, the second reaction gas supply pipeline 420, the purge gas supply pipeline 430; the exhaust gas treatment mechanism 500, the first exhaust pipe 510, the first exhaust pump 520, the second exhaust pipe 530, the second exhaust pump 540; the support frame 600, the slide rail 610, the bracket 620; the inflation mechanism 700, the inflation pipe 710; the heating mechanism 800; the temperature detection structure 900. DETAILED DESCRIPTION

[0036] Embodiments of the present invention are described in detail below, examples of which are shown in the accompanying drawings, wherein the same or similar reference numerals throughout represent the same or similar elements or elements having the same or similar functions. The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain the present invention, and cannot be understood as limiting the present invention.

[0037] In the description of the present invention, it should be understood that descriptions involving orientations, such as up, down, front, back, left, right, etc., and orientations or positional relationships indicated are based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as a limitation on the present invention.

[0038] In the description of the present invention, "several" means more than one, "many" means more than two, "greater than", "less than", "exceed", etc. are understood to exclude the number itself, and "above", "below", "within", etc. are understood to include the number itself. If there is a description of "first" or "second", it is only used for the purpose of distinguishing the technical features, and cannot be understood as indicating or implying the relative importance or implicitly indicating the number of the indicated technical features or implicitly indicating the order of the indicated technical features.

[0039] In the description of the present invention, unless otherwise clearly defined, terms such as setting, installing, connecting, etc. should be understood in a broad sense, and technicians in the relevant technical field can reasonably determine the specific meanings of the above terms in the present invention based on the specific content of the technical solution.

[0040] In the description of the present invention, the description with reference to the terms "one embodiment", "some embodiments", "illustrative embodiments", "examples", "specific examples", or "some examples" means that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present invention. In this specification, the schematic representation of the above terms does not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described may be combined in any one or more embodiments or examples in a suitable manner.

[0041] Reference Figures 1 to 3 The present invention provides an atomic layer deposition device, including a substrate rack 100, a reaction chamber 200 and a driving mechanism 300. The substrate rack 100 is provided with a plurality of loading positions 110 in the circumferential direction, and the loading positions 110 are used to load the substrate to be plated. The substrate rack 100 is accommodated in the reaction chamber 200. A reaction chamber 120 is defined between the substrate rack 100 and the inner wall of the reaction chamber 200. When a reaction gas is introduced into the reaction chamber 120, the gas reacts on the surface of the substrate to be plated and is deposited on the surface of the substrate to be plated to form a thin film.

[0042] The side of the reaction chamber 200 has a first gas cavity 210 and a second gas cavity 220 which are alternately arranged along the circumferential direction. Both the first gas cavity 210 and the second gas cavity 220 are connected to the reaction chamber 120. The first gas cavity 210 is used to introduce the first reaction gas into the reaction chamber 120, and the second gas cavity 220 is used to introduce the second reaction gas into the reaction chamber 120. The driving mechanism 300 is connected to the end of the substrate rack 100 along the axial direction of the substrate rack 100, and is used to drive the substrate rack 100 to rotate. During the rotation of the substrate rack 100, the loading position 110 located in its circumferential direction moves to the first gas cavity 210 and the second gas cavity 220 in sequence, so that the first reaction gas and the second reaction gas are alternately deposited on the substrate to be plated.

[0043] During the operation of the atomic layer deposition equipment, the substrate to be plated first passes through the first gas chamber 210. The first reaction gas introduced into the reaction chamber 120 by the first gas chamber 210 undergoes a chemical adsorption reaction on the surface of the substrate to be plated. When the substrate to be plated passes through the second gas chamber 220, the second reaction gas introduced into the reaction chamber 120 by the second gas chamber 220 continues to undergo a surface chemical reaction with the substrate to be plated that has adsorbed the first reaction gas and forms a thin film. When the first reaction gas and the second reaction gas are introduced into the reaction chamber 120, the two are easy to cross-react to form pollutants or dust particles. Based on this, in the embodiment of the present invention, at least two exhaust chambers 230 and at least one purge chamber 240 are provided between the adjacent first gas chamber 210 and the second gas chamber 220, and one of the purge chambers 240 is located between the adjacent exhaust chambers 230. The exhaust chamber 230 is used to extract the gas in the reaction chamber 120, and the purge chamber 240 is used to introduce an inert gas into the reaction chamber 120. In this way, in this embodiment, the working process of the atomic layer deposition device is that the first reaction gas enters the reaction chamber 120 and chemically adsorbs on the surface of the reaction chamber 120. The surface of the substrate to be plated, the exhaust chamber 230 extracts the remaining first reaction gas after the surface of the substrate to be plated is saturated with adsorption, and the purge chamber 240 assists in purging the gas on the surface of the substrate to be plated, so that the first reaction gas is exhausted more thoroughly; then, the second reaction gas enters the reaction chamber 120, and reacts with the first reaction gas adsorbed on the substrate to be plated, the exhaust chamber 230 extracts excess reactants and by-products on the surface of the substrate to be plated, and the purge chamber 240 assists in purging excess products on the surface of the substrate to be plated, and a thin film is deposited on the surface of the substrate to be plated; the first reaction gas enters the reaction chamber 120 again, and is adsorbed on the original substrate to be plated or adsorbed on other substrates to be plated again, and the cycle is repeated.

[0044] Therefore, in the embodiment of the present invention, in each coating cycle, in the process from the first reaction gas being introduced into the reaction chamber 120 to the second reaction gas being introduced into the reaction chamber 120, or in the process from the second reaction gas being introduced into the reaction chamber 120 to the first reaction gas being introduced into the reaction chamber 120, it is necessary to sequentially pass through one of the exhaust chambers 230, the purge chamber 240, and the other exhaust chamber 230 to ensure that the unadsorbed first reaction gas, the second reaction gas, or excess products formed by the reaction between the two are discharged from the reaction chamber 120, which can improve the quality of the thin film on the substrate to be plated, reduce cross contamination between the first reaction gas and the second reaction gas, avoid pollutants formed by the reaction between the two to contaminate the equipment, extend the maintenance cycle of the equipment, and improve the production efficiency of the equipment.

[0045] It should be noted that, in the above-mentioned embodiment, in the emptying chamber 230 and the purge chamber 240 located between the first gas chamber 210 and the second gas chamber 220, the two emptying chambers 230 are always located on both sides of the purge chamber 240, so that between the two steps of the first reaction gas being introduced into the reaction chamber 120 and the second reaction gas being introduced into the reaction chamber 120, the substrate to be plated undergoes two emptying processes in succession, and the inert gas introduced into the reaction chamber 120 by the purge chamber 240 located between the two emptying chambers 230 can purge the gas or pollutants on the surface of the substrate to be plated to the emptying chambers 230 on both sides thereof and be extracted by the emptying chamber 230, so that the unreacted gas and the excess products formed by the reaction can be completely discharged from the reaction chamber 120, so as to isolate the cross-reaction between the first reaction gas and the second reaction gas and reduce the pollution of the equipment to the coating process.

[0046] like Figure 2 As shown, the atomic layer deposition equipment can also be equipped with a supply system 400, which includes a first reaction gas supply pipeline 410, a second reaction gas supply pipeline 420 and a purge gas supply pipeline 430. The first reaction gas supply pipeline 410, the second reaction gas supply pipeline 420 and the purge gas supply pipeline 430 can be provided in plurality. One end of the first reaction gas supply pipeline 410 is connected to the first gas chamber 210, and can supply precursor gas sources such as TMA (trimethylaluminum) and TEA (triethylaluminum) to the first gas chamber 210. One end of the second reaction gas supply pipeline 420 is connected to the second gas chamber 220, and can supply water, ozone, Plasma plasma gas, etc. to the second gas chamber 220. One end of the purge gas supply pipeline 430 is connected to the purge chamber 240, and can supply inert gases such as argon and nitrogen to the purge chamber 240.

[0047] The atomic layer deposition apparatus further includes an exhaust gas treatment mechanism 500, which includes a vacuum pump and a pipeline connected to the exhaust chamber 230. The vacuum pump extracts gas to the exhaust chamber 230 through the pipeline to exhaust the excess reaction gas and reaction products in the reaction chamber 120. In one embodiment, the exhaust gas treatment mechanism 500 includes a first exhaust pipeline 510, a first exhaust pump 520, a second exhaust pipeline 530 and a second exhaust pump 540. The first exhaust pump 520 is connected to the first exhaust pipeline 510. The first end is connected to the emptying cavity 230 located on one side of the purge cavity 240, the second vacuum pump 540 is connected to the second vacuum pipe 530, and the second vacuum pipe 530 is connected to the emptying cavity 230 located on the other side of the corresponding purge cavity 240. In this embodiment, the gases in different emptying cavities 230 are respectively pumped by the first vacuum pump 520 and the second vacuum pump 540 which are independent of each other, so as to avoid the two gases reacting in the pipeline or pump to produce pollutants or powder particles, pollute the pump body and the pipeline, cause damage to the pump, and affect the service life of the pump.

[0048] In addition, in one embodiment, the first air extraction pipeline 510 and the second air extraction pipeline 530 are both heated to prevent the reaction gas from condensing; for example, a heating device is wrapped around the outer surface of the first air extraction pipeline 510 and the second air extraction pipeline 530. Alternatively, a residual gas treatment device is provided on the first air extraction pipeline 510 and the second air extraction pipeline 530, and the residual gas treatment device is located at the front end of the first air extraction pump 520 and the second air extraction pump 540, and is used to perform high-temperature decomposition on the extracted gas before the gas in the first air extraction pipeline 510 and the second air extraction pipeline 530 enters the first air extraction pump 520 and the second air extraction pump 540, so as to avoid the gas from generating pollutants in the pump, thereby improving the maintenance cycle and service life of the air extraction pump.

[0049] Figure 1 and Figure 2 The schematic diagram of the atomic layer deposition device with a coating cycle is shown, in which a substrate to be coated needs to pass through the first gas chamber 210-emptying chamber 230-purge chamber 240-emptying chamber 230-second gas chamber 220-emptying chamber 230-purge chamber 240-emptying chamber 230 in sequence when undergoing a coating cycle. In this case, a thin film is formed on the surface of the substrate to be coated. When it is necessary to coat multiple layers of thin films on the substrate to be coated or change the thickness of the film layer, it can be achieved by driving the substrate rack 100 through multiple coating cycles by the driving mechanism 300, or by increasing the rotation speed of the substrate rack 100 driven by the driving mechanism 300. When it is necessary to improve the coating efficiency and increase the output per unit time, it can be achieved by increasing the rotation speed of the substrate rack 100, or by setting multiple coating cycles in the reaction chamber 200, or by setting more loading positions 110 on the substrate rack 100.

[0050] Figure 4 FIG. 2 shows a schematic diagram of an atomic layer deposition apparatus when the reaction chamber 200 is provided with two coating cycles, such as Figure 4 As shown, when one of the substrates to be plated rotates one circle, the substrate to be plated undergoes two coating cycles in total, and two thin films can be formed on the substrate to be plated.

[0051] Figure 1 The case where a reaction chamber 120 is provided on one side of the substrate holder 100 is shown. In this case, the gas in the reaction chamber 120 is deposited toward one surface of the substrate to be plated, so that single-sided coating of the substrate to be plated can be achieved. Figure 5 FIG. 1 shows a schematic diagram of a substrate rack 100 provided with two circles of loading positions 110, as shown in FIG. Figure 4 As shown, the reaction chamber 200 has a first wall 250 and a second wall 260 which are nested in a radial direction, and a portion of the substrate rack 100 provided with the loading position 110 is located between the first wall 250 and the second wall 260, and a side of the substrate rack 100 facing the first wall 250 and the first wall 250 together define a reaction chamber 120, and a side of the substrate rack 100 facing the second wall 260 and the second wall 260 together define a reaction chamber 120, and loading positions 110 are provided on both sides of the substrate rack 100 in the radial direction. 0, the loading positions 110 are arranged in two circles along the circumference of the substrate rack 100, and the loading positions 110 on each side of the substrate rack 100 are all arranged toward the reaction chamber 120, and the first gas chamber 210, the second gas chamber 220, the purge chamber 240 and the exhaust chamber 230 are both arranged on the first wall 250 and the second wall 260, so that the substrates to be plated loaded on the loading positions 110 on both sides of the substrate rack 100 can be deposited by the first reaction gas and the second reaction gas introduced into the reaction chamber 120, and a thin film is formed on the surface.

[0052] Figure 5 In the embodiment, the substrate rack 100 is provided with two circles of loading positions 110, and the substrate to be plated is installed on the side of each circle of loading positions 110 facing the reaction chamber 120, and the gas in the two reaction chambers 120 is respectively deposited on the substrate to be plated on the two circles of loading positions 110, so that a thin film is formed on one surface of the substrate to be plated on each circle of loading positions 110. If the substrate rack 100 is provided with a circle of loading positions 110, and the two sides of the loading positions 110 are respectively defined by the first wall 250 and the second wall 260 to define the reaction chamber 120, when coating, the gas in the two reaction chambers 120 is respectively deposited on the two opposite surfaces of the substrate to be plated, so as to achieve double-sided coating of the substrate to be plated.

[0053] It should be noted that when the substrate rack 100 is provided with two circles of loading positions 110, the first gas chambers 210 located on the first wall 250 and the second wall 260 are respectively located on both sides of the substrate rack 100 in the radial direction of the reaction chamber 200. Similarly, the second gas chamber 220, the exhaust chamber 230, and the purge chamber 240 correspond to each other in the radial direction of the reaction chamber 200. Therefore, when the substrate to be plated located on one side of the substrate rack 100 passes through the first gas chamber 210, the substrate to be plated on the other side of the substrate rack 100 passes through the first gas chamber 210 at the same time. In this way, cross-reactions between different reaction gases can be avoided, and the influence of the inert gas purge of the purge chamber 240 and the extraction of the gas in the exhaust chamber 230 on the coating process can be reduced.

[0054] To avoid cross-contamination between the first reaction gas and the second reaction gas, the distance between the first gas cavity 210 and the second gas cavity 220 in the circumferential direction of the reaction chamber 200 can be increased so that the first reaction gas and the second reaction gas do not contact each other in space, thereby reducing pollutants generated by the reaction between the two; or, the flow rate of the inert gas introduced into the purge cavity 240 can be increased to enhance the isolation effect of the inert gas on the first reaction gas and the second reaction gas; or, the length of the purge cavity 240 in the circumferential direction of the reaction chamber 200 can be increased to increase the purge range of the inert gas between the first gas cavity 210 and the second gas cavity 220, thereby enhancing the isolation effect of the inert gas on the first reaction gas and the second reaction gas; or, the number of purge cavities 240 arranged between the first gas cavity 210 and the second gas cavity 220 can be increased to enhance the isolation effect of the inert gas on the first reaction gas and the second reaction gas.

[0055] As another implementation method for reducing the cross contamination between the first reaction gas and the second reaction gas, the distance between the substrate rack 100 and the inner wall of the reaction chamber is reduced to reduce the space of the reaction chamber 120, and the reaction gas is confined to a smaller area, so that after the reaction gas reacts with the substrate to be plated, it can be quickly evacuated from the exhaust chamber 230, reducing the risk of reaction gas diffusion and achieving the purpose of preventing the two reaction gases from combining. Specifically, Figure 6 As shown, the distance between the substrate rack 100 and the inner wall of the reaction chamber 200 is H, and H is set to 0.5-50 mm, so that the reaction chamber 120 has enough space for the reaction gas to react with the substrate to be plated and plays a role in isolating the first reaction gas from the second reaction gas.

[0056] As another implementation method for reducing cross contamination between the first reaction gas and the second reaction gas, Figure 7As shown, partitions 130 are provided on both sides of the first gas chamber 210 and both sides of the second gas chamber 220. The partitions 130 are located in the reaction chamber 120. The partitions 130 can be connected to the inner wall of the reaction chamber 200, or connected to the side of the substrate rack 100 facing the reaction chamber 120. The partitions 130 on both sides of the reaction chamber 200 in the radial direction face the inner wall of the reaction chamber 200 and the substrate rack 100 respectively. The partitions 130 are used to isolate the first gas chamber 210 from the second gas chamber 220 to limit the reaction gas to a specific area, prevent different types of reaction gases from combining, and react to produce pollutants.

[0057] like Figure 3 and Figure 6 As shown, the substrate rack 100 includes a mounting portion 140 and a loading portion 150. The mounting portion 140 is connected to the end of the loading portion 150 along the axial direction of the substrate rack 100. The loading portion 150 is in a closed ring shape. The cross-section of the loading portion 150 is circular, polygonal, etc. The loading position 110 is arranged on the loading portion 150. The driving mechanism 300 includes a driving member 310. Since the substrate rack 100 is located in the reaction chamber 120 as a whole, a part of the driving member 310 is inserted into the interior of the reaction chamber 200 and connected to the mounting portion 140. When the driving member 310 drives the mounting portion 140 to rotate, the loading portion 150 rotates synchronously with the mounting portion 140, so that the substrate to be plated on the loading position 110 rotates around the axis of the loading portion 150.

[0058] The mounting portion 140 is configured to be disc-shaped or umbrella-shaped, the loading portion 150 is connected to the edge of the mounting portion 140, the driving member 310 is configured to be a power element such as a motor that outputs rotational power, and the output end of the driving member 310 is connected to the center of the mounting portion 140. The substrate rack 100 and the reaction chamber 200 are coaxially arranged so that the distance between the substrate rack 100 and the inner wall of the reaction chamber 200 is kept consistent in the circumferential direction of the reaction chamber 200. When the driving member 310 drives the mounting portion 140 to rotate, different loading positions 110 on the substrate rack 100 can pass through different cavities in sequence and provide reaction gas for reacting with the substrate to be plated.

[0059] like Figure 6 As shown, in this embodiment, the atomic layer deposition equipment is arranged as a vertical structure, the substrate rack 100 and the reaction chamber 200 are arranged in the vertical direction, the driving mechanism 300 is arranged at the bottom of the substrate rack 100, the driving member 310 is inserted into the mounting portion 140 at the bottom of the mounting portion 140 and supports the mounting portion 140, the lower end of the loading portion 150 is connected to the mounting portion 140, and the upper end of the loading portion 150 is suspended. The substrate rack 100 rotates relative to the reaction chamber 200 in a horizontal plane driven by the driving member 310.

[0060] Alternatively, the substrate rack 100 and the reaction chamber 200 are arranged in a vertical direction, the driving mechanism 300 is arranged on the top of the substrate rack 100, the driving member 310 is inserted into the reaction chamber 200 at the top of the reaction chamber 200, and is connected to the substrate rack 100. In this case, the mounting portion 140 is connected to the upper end of the loading portion 150, the driving member 310 is connected to the mounting portion 140, and the substrate rack 100 is driven by the driving member 310 to rotate relative to the reaction chamber 200 in a horizontal plane. In another embodiment, as Figure 8 As shown, the atomic layer deposition device is configured as a horizontal structure, and the atomic layer deposition device also includes a support frame 600, the reaction chamber 200 is installed above the support frame 600, the support frame 600 supports the reaction chamber 200, the reaction chamber 200 and the substrate rack 100 are arranged in a horizontal direction, the driving mechanism 300 is arranged at one end of the substrate rack 100 in a horizontal direction, one end of the loading part 150 in a horizontal direction is connected to the mounting part 140, and the other end of the loading part 150 is suspended, or a horizontal rotating shaft is arranged at one end of the reaction chamber 200 away from the mounting part 140, the loading part 150 is coaxially arranged and rotatably connected with the horizontal rotating shaft, the mounting part 140 is connected to the driving member 310, and the driving member 310 drives the substrate rack 100 to rotate relative to the reaction chamber 200 in a vertical plane.

[0061] A transmission component, such as a rotating shaft, may also be provided in the driving mechanism 300. The transmission shaft is connected to the driving member 310, and the power of the driving member 310 is transmitted to the substrate rack 100. The transmission shaft is rotatably connected to the reaction chamber 200, and a shaft sealing component, such as a sealing ring, is provided between the transmission shaft and the reaction chamber 200.

[0062] The atomic layer deposition equipment also includes a slide rail 610 and a bracket 620. The substrate rack 100 is installed on one side of the bracket 620 in the horizontal direction. The slide rail 610 is connected to the bottom of the bracket 620. The slide rail 610 is slidably connected to a preset track in the production room. The external drive module is connected to the bracket 620, which can drive the bracket 620 and the substrate rack 100 to move toward the reaction chamber 200, push the substrate rack 100 into the reaction chamber 200, or drive the bracket 620 and the substrate rack 100 away from and exit the reaction chamber 200, so as to facilitate the loading of the substrate to be plated, remove the substrate, and facilitate the later maintenance of the atomic layer deposition equipment.

[0063] The atomic layer deposition equipment also includes a gas filling mechanism 700. The loading part 150 is in the form of a closed ring. The cross section of the loading part 150 is polygonal or circular. A receiving chamber 151 is formed inside the loading part 150. The receiving chamber 151 is connected to the reaction chamber 120. The gas filling mechanism 700 is used to fill the receiving chamber 151 with inert gas. It should be noted that since the substrate rack 100 needs to rotate under the drive of the driving mechanism 300, in order to ensure that the substrate rack 100 can rotate relative to the reaction chamber 200, a gap is inevitably provided between the inner wall of the reaction chamber 200 on the rotation axis of the substrate rack 100 and the end of the substrate rack 100. The reaction chamber 120 is connected to the receiving chamber 151 through the gap. In order to prevent the gas in the reaction chamber 120 from contaminating the driving member 310 or other components in the reaction chamber 200 through the gap, in this embodiment, by filling the receiving chamber 151 with inert gas, The gas pressure in the accommodating chamber 151 is greater than the gas pressure in the reaction chamber 120. Due to the pressure difference between the two, under the suppression of the gas pressure, the gas in the reaction chamber 120 is confined in the reaction chamber 120 and cannot diffuse to other areas, thereby reducing the contamination of the gas in the reaction chamber 120 to the equipment. In addition, the inert gas in the accommodating chamber 151 can assist in the purging of the inert gas in the purge chamber 240, so that the gas in the reaction chamber 120 can be completely discharged through the exhaust chamber 230, thereby isolating the first reaction gas from the second reaction gas.

[0064] like Figure 6 As shown, the inflation mechanism 700 also includes an inflation tube 710, part of which is passed through the mounting portion 140 and inserted into the accommodating chamber 151, and the inert gas in the inflation tube 710 can be directly passed into the accommodating chamber 151; or, the inflation tube 710 is passed through the interior of the driving member 310. Since the driving member 310 needs to be plugged into the reaction chamber 200 and connected to the mounting portion 140, the inflation tube 710 is plugged into the mounting portion 140 by means of the structure of the driving member 310, so that the inert gas in the inflation tube 710 can pass into the accommodating chamber 151; or, part of the inflation tube 710 is passed through an end of the reaction chamber 200 away from the mounting portion 140 and inserted into the accommodating chamber 151, that is, the inflation tube 710 is inserted into the reaction chamber 200 from the top of the reaction chamber 200, and is further inserted into the accommodating chamber 151 to pass the inert gas into the accommodating chamber 151; or, as Figure 8 As shown, part of the gas filling tube 710 is installed on the loading part 150 and inserted into the accommodating cavity 151 . A plurality of gas filling tubes 710 can be arranged in the circumferential direction of the loading part 150 , and a plurality of gas filling tubes 710 can simultaneously introduce inert gas into the accommodating cavity 151 .

[0065] In one embodiment, one end of the substrate rack 100 is connected to the driving mechanism 300, and the other end is coaxially arranged with the rotating shaft arranged on the inner wall of the reaction chamber 200 and is rotatably connected, so that the two ends of the substrate rack 100 are supported by the rotating shaft and the driving mechanism 300 respectively, so that the substrate rack 100 rotates more smoothly. Figure 6 and Figure 8 In the two configurations of the atomic layer deposition equipment shown, one end of the substrate rack 100 away from the driving mechanism 300 is configured in a suspended form. In this way, the end of the substrate rack 100 away from the driving mechanism 300 is separated and independent from the reaction chamber 200. On the one hand, a chamber cover can be provided at the end of the reaction chamber 200 away from the mounting portion 140. Since the chamber cover is not associated with the substrate rack 100, the chamber cover can be easily disassembled. On the other hand, the chamber cover and the substrate rack 100 are separated from each other, and the gap between the two provides a movable space for the rotation of the substrate rack 100, so that the substrate rack 100 can rotate relative to the reaction chamber 200.

[0066] Furthermore, when there is a gap between the two axial ends of the substrate rack 100 and the inner wall of the reaction chamber 200, the inflation tube 710 in the inflation mechanism 700 can be directly passed through the reaction chamber 200 and inserted into the gap. The inflation mechanism 700 can directly fill the gap with inert gas to prevent the gas in the reaction chamber 120 from entering the gap and contaminating other components in the reaction chamber 200 through the gap.

[0067] In one embodiment, the atomic layer deposition apparatus further includes a heating mechanism 800, which is installed on the inner wall of the reaction chamber 200 facing the substrate rack 100. The heating mechanism 800 can generate heat and transfer the heat to the substrate to be plated in the form of thermal radiation, thereby heating the substrate to be plated to the temperature required for the reaction. The heating mechanism 800 is evenly distributed along the circumference of the reaction chamber 200, and the heating mechanism 800 can be arranged on the inner wall of the side and end of the reaction chamber 200. The heating mechanism 800 can select a heating wire or a heating rod, and can be wound in a ring shape or a spiral shape along the circumference of the reaction chamber 200.

[0068] In another embodiment, the heating mechanism 800 is installed on the substrate rack 100 and faces the loading position 110. The heating mechanism 800 is distributed in a ring shape along the circumference of the substrate rack 100, or is arranged in a spiral winding shape. The heating mechanism 800 can rotate synchronously with the substrate rack 100. Since the heating mechanism 800 is directly installed on the substrate rack 100, the distance between the heating mechanism 800 and the substrate to be plated is closer, and the heating efficiency of the substrate to be plated is higher. Therefore, the actual heating temperature of the substrate to be plated is closer to the set heating temperature, and the temperature of the substrate to be plated is more uniform, which is beneficial to improving the uniformity of the coating.

[0069] Furthermore, a temperature detection structure 900 is also provided in the atomic layer deposition equipment. The temperature detection structure 900 is installed on the substrate rack 100 and is located on the side of the substrate to be plated that is away from the reaction chamber 120. The temperature detection structure 900 can rotate synchronously with the substrate rack 100. Therefore, the relative position of the temperature detection structure 900 and the substrate to be plated is stable. The temperature detection structure 900 can be set as a thermocouple to detect the temperature of the substrate to be plated in real time to ensure that the temperature of the substrate to be plated reaches the temperature required for the reaction and improve the coating quality. Alternatively, a plurality of temperature detection structures 900 are arranged on the circumference of the reaction chamber 200, and the temperature detection structures 900 are arranged as radioactive thermometers, and the plurality of temperature detection structures 900 simultaneously detect the temperature of the substrate to be plated to ensure the accuracy of the temperature of the film to be plated on the substrate to be plated; alternatively, temperature detection structures are arranged on the circumference of the outside of the reaction chamber 200 and on the substrate rack 100, the radioactive thermometers on the circumference of the reaction chamber 200 can detect the temperature of the substrate to be plated located inside the reaction chamber 200, and the thermocouples installed on the substrate rack 100 can directly detect the temperature of the substrate to be plated, and the two thermometers can be used alone or in combination to improve the accuracy of the temperature of the film to be plated on the substrate to be plated.

[0070] like Figure 6 and Figure 8 As shown, the atomic layer deposition apparatus further includes a liner 270, which is detachably connected to the inner wall of the reaction chamber 200 facing the substrate rack 100. The liner 270 is used to isolate the reaction gas, prevent deposition on the inner wall of the reaction chamber 200, and contaminate the inner wall of the reaction chamber 200, thereby extending the cleaning and maintenance cycle of the inner wall of the reaction chamber 200. The detachable connection method of the liner 270 is not limited to threaded connection, clamping, hanging, etc., and the liner 270 can be replaced and cleaned by disassembling and assembling the liner 270.

[0071] like Figure 1 As shown, the reaction chamber 200 includes a chamber door 280 and a chamber body 290. The chamber door 280 is connected to the chamber body 290 and is used to open or close the reaction chamber 120. When the chamber door 280 is opened, the substrate to be plated can be placed in or taken out of the reaction chamber 120. When the chamber door 280 is closed, the reaction chamber 120 is closed to provide a relatively closed reaction environment for the coating process of the substrate to be plated. In one embodiment, at least one of the first gas chamber 210, the second gas chamber 220, the purge chamber 240 and the exhaust chamber 230 is arranged on the chamber door 280 to make full use of the installation space around the reaction chamber 200, so that the reaction chamber 200 can be provided with a larger number of gas chambers, thereby improving the coating efficiency of the atomic layer deposition equipment.

[0072] In other embodiments, the chamber door 280 is disposed at the end of the chamber body 290, for example, the chamber door 280 is disposed at the top or bottom of the chamber body 290. In this way, the substrate rack 100 can be loaded into the reaction chamber 200 in a vertical direction. Since each gas chamber is located on the side of the chamber body 290, the interference between the substrate rack 100 and the gas inlet and outlet system in the gas chamber during the loading process can be reduced.

[0073] The embodiments of the present invention are described in detail above in conjunction with the accompanying drawings, but the present invention is not limited to the above embodiments. Various changes can be made within the knowledge of ordinary technicians in the relevant technical field without departing from the purpose of the present invention. In addition, the embodiments of the present invention and the features in the embodiments can be combined with each other without conflict.

Claims

1. Atomic layer deposition equipment, characterized in that include: The substrate rack is provided with a plurality of loading positions in the circumferential direction, and the loading positions are used to load the substrate to be plated; A reaction chamber, wherein the substrate rack is accommodated inside the reaction chamber, a reaction chamber is defined between the substrate rack and the inner wall of the reaction chamber, a side portion of the reaction chamber has a first gas chamber and a second gas chamber alternately arranged along the circumferential direction, the first gas chamber is used to introduce a first reaction gas into the reaction chamber, the second gas chamber is used to introduce a second reaction gas into the reaction chamber, at least two exhaust chambers and at least one purge chamber are provided between adjacent first gas chambers and second gas chambers, and one of the purge chambers is located between adjacent exhaust chambers, the exhaust chamber is used to extract gas in the reaction chamber, the purge chamber is used to introduce an inert gas into the reaction chamber, the substrate to be plated can undergo two exhaust processes in succession, and the inert gas introduced into the reaction chamber by the purge chamber located between the two exhaust chambers can purge gas or pollutants on the surface of the substrate to be plated to the exhaust chambers on both sides and be extracted by the exhaust chambers; The driving mechanism is connected to the end of the substrate frame along the axial direction of the substrate frame and is used to support and drive the substrate frame to rotate.

2. The atomic layer deposition device according to claim 1, characterized in that: The reaction chamber comprises a first wall and a second wall which are nested in a radial direction, a portion of the substrate rack is located between the first wall and the second wall, and defines two reaction chambers with the first wall and the second wall respectively, loading positions are provided on both sides of the substrate rack in a radial direction, and the loading positions are arranged toward the reaction chamber, and the first wall and the second wall are provided with the first gas chamber, the second gas chamber, the exhaust chamber and the purge chamber.

3. The atomic layer deposition device according to claim 1, characterized in that: The substrate rack includes a mounting portion and a loading portion, the mounting portion is connected to the end of the loading portion along the axial direction of the substrate rack, the loading portion is annular, the loading position is arranged on the loading portion, the driving mechanism includes a driving member, part of the driving member is inserted into the interior of the reaction chamber and connected to the mounting portion, and the driving member is used to drive the mounting portion to rotate.

4. The atomic layer deposition device according to claim 3, characterized in that: The substrate rack and the reaction chamber are arranged along a vertical direction, and the driving mechanism is arranged at the bottom or top of the substrate rack.

5. The atomic layer deposition device according to claim 3, characterized in that: The atomic layer deposition equipment also includes a support frame, the reaction chamber is installed on the support frame, the reaction chamber and the substrate frame are arranged in a horizontal direction, and the driving mechanism is arranged in a horizontal direction at one end of the substrate frame.

6. The atomic layer deposition device according to claim 3, characterized in that: The atomic layer deposition device further includes a gas filling mechanism. The interior of the loading part has a containing chamber, the containing chamber is communicated with the reaction chamber, and the gas filling mechanism is used for filling the containing chamber with an inert gas.

7. The atomic layer deposition device according to claim 6, characterized in that: The inflation mechanism includes an inflation tube, part of which is passed through the mounting portion and inserted into the accommodating cavity; Alternatively, part of the inflation tube is arranged inside the driving member and inserted into the accommodating cavity; Alternatively, part of the inflation tube is arranged through an end of the reaction chamber away from the mounting portion and inserted into the accommodating cavity; Alternatively, part of the inflation tube is installed on the loading portion and inserted into the accommodating cavity.

8. The atomic layer deposition device according to claim 1, characterized in that: The atomic layer deposition device further comprises a gas filling mechanism, and there is a gap between the two axial ends of the substrate rack and the inner wall of the reaction chamber, and the gas filling mechanism is used to fill the gap with inert gas.

9. The atomic layer deposition device according to claim 1, characterized in that: The atomic layer deposition equipment further includes a heating mechanism, which is installed on the inner wall of the reaction chamber facing the substrate rack, and / or the heating mechanism is installed on the substrate rack and faces the loading position.

10. The atomic layer deposition device according to claim 1, characterized in that: The reaction chamber includes a chamber door and a chamber body, wherein the chamber door is connected to the chamber body and is used to open or close the reaction chamber, and at least one of the first gas chamber, the second gas chamber, the purge chamber and the exhaust chamber is arranged on the chamber door.

11. The atomic layer deposition device according to claim 1, characterized in that: The atomic layer deposition equipment also includes a lining plate, which is detachably connected to the inner wall of the reaction chamber facing the substrate rack.

12. The atomic layer deposition device according to claim 1, characterized in that: The atomic layer deposition equipment also includes an exhaust gas treatment mechanism, which includes a first exhaust pipe, a first exhaust pump, a second exhaust pipe and a second exhaust pump. The first exhaust pump is connected to the first exhaust pipe, and the first exhaust pipe is connected to the exhaust cavity located on one side of the purge cavity. The second exhaust pump is connected to the second exhaust pipe, and the second exhaust pipe is connected to the exhaust cavity located on the other side of the corresponding purge cavity.

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