Pulling speed adjustment method, device, electronic equipment and storage medium

Abstract

The embodiment of the present invention provides a pulling speed adjustment method, device, equipment and medium. The method includes: in the current CZ single crystal pulling process, obtaining characteristic data before the crystal length reaches a first preset length in the temperature adjustment stage and the seeding stage, inputting the characteristic data into a pulling speed prediction model, generating a predicted pulling speed when the crystal length reaches a second preset length in the seeding stage according to the characteristic data by the pulling speed prediction model, adjusting the power according to the predicted pulling speed and the preset pulling speed range, so as to adjust the pulling speed before the shoulder release stage of the current CZ single crystal pulling process to within the preset pulling speed range, so that the pulling speed when the crystal length reaches the second preset length in the seeding stage can be predicted in advance, and adjusting the pulling speed accordingly, so that the pulling speed can be adjusted to within the preset pulling speed range, thereby avoiding the occurrence of problems such as wire breakage in the shoulder release stage.

Description

Technical Field

[0001] The present invention relates to the technical field of crystal preparation, and in particular to a pulling speed adjustment method, a pulling speed adjustment device, an electronic device and a storage medium. Background Art

[0002] The preparation process of single crystal silicon materials is mainly based on the Czochralski process (CZ), which uses the CZ process to refine polysilicon raw materials into single crystal silicon. The process of generating rod-shaped single crystal silicon crystals in the CZ process is divided into the steps of loading, heating melt, temperature adjustment, seeding, shoulder release, shoulder rotation, equal diameter, and finishing.

[0003] Among them, when the polysilicon raw material is melted, seeding cannot be started immediately, because the temperature at this time is higher than the seeding temperature, and it must be cooled down to adjust the temperature to the seeding temperature. Seeding is to contact the seed crystal (that is, a single crystal processed into a certain shape) installed at the end of the wire rope in advance with the liquid surface. At the seeding temperature, the silicon molecules will grow along the lattice direction of the seed crystal to form a single crystal. Shouldering is to gradually grow the crystal diameter to the required diameter. In the process of shouldering, a section of crystal will be pulled out as the length gradually increases and the diameter gradually increases to about the required diameter, so as to eliminate crystal dislocations.

[0004] In the current CZ process, the power is adjusted during the temperature adjustment stage, but not during the seeding stage. If the power is not appropriate during the temperature adjustment stage, it will be reflected in the seeding speed during the seeding stage. If the temperature is too high, the seeding speed will be too low. If the temperature is too low, the seeding speed will be too high. If the temperature is not appropriate, abnormalities such as wire breakage may occur during the shoulder release stage after the seeding stage. Summary of the invention

[0005] In view of the above problems, an embodiment of the present invention is proposed to provide a method for adjusting pulling speed to overcome the above problems or at least partially solve the above problems, so as to solve the problem that if the temperature is not appropriate, abnormalities such as wire breakage may occur in the shoulder release stage following the seeding stage.

[0006] Correspondingly, an embodiment of the present invention further provides a pulling speed adjustment device, an electronic device and a storage medium to ensure the implementation and application of the above method.

[0007] In order to solve the above problems, an embodiment of the present invention discloses a method for adjusting pulling speed, comprising:

[0008] In this CZ single crystal pulling process, characteristic data before the crystal length reaches a first preset length in the temperature adjustment stage and the seeding stage are obtained, wherein the characteristic data includes operation data related to the pulling speed in the seeding stage;

[0009] The characteristic data is input into a pulling speed prediction model, wherein the pulling speed prediction model is obtained by training the characteristic data samples before the crystal length reaches a first preset length in the temperature adjustment stage and the seeding stage, and the corresponding marked sample pulling speed when the crystal length reaches a second preset length in the seeding stage;

[0010] According to the characteristic data, the pulling speed prediction model generates a predicted pulling speed when the crystal length reaches a second preset length in the seeding stage;

[0011] The power is adjusted according to the predicted pulling speed and the preset pulling speed range to adjust the pulling speed before the shoulder release stage of the current CZ single crystal pulling process to within the preset pulling speed range.

[0012] Optionally, in the present CZ single crystal pulling process, obtaining characteristic data before the crystal length reaches a first preset length in the temperature adjustment stage and the seeding stage includes:

[0013] In the temperature adjustment stage and the seeding stage, the operation data is collected multiple times;

[0014] detecting the crystal length in the seeding stage;

[0015] The operating data collected before the crystal length reaches the first preset length in the seeding stage is used as the characteristic data.

[0016] Optionally, inputting the characteristic data into a casting speed prediction model comprises:

[0017] When the crystal length reaches a first preset length in the seeding stage, starting the pulling speed prediction model;

[0018] The characteristic data is input into the casting speed prediction model.

[0019] Optionally, in the present Czochralski single crystal pulling process, before acquiring characteristic data before the crystal length reaches a first preset length in the temperature adjustment stage and the seeding stage, the method further comprises:

[0020] According to the historical pulling speed when the crystal length reaches the second preset length in the seeding stage and the corresponding historical wire breakage rate in the shoulder release stage, the preset pulling speed range corresponding to the wire breakage rate being lower than the preset value is determined.

[0021] Optionally, the adjusting the power according to the predicted pulling speed and the preset pulling speed range to adjust the pulling speed before the shoulder release stage of the current CZ single crystal pulling process to within the preset pulling speed range includes:

[0022] Determining the power adjustment range according to the predicted pulling speed, the preset pulling speed range, and the predetermined relationship between the power adjustment range and the pulling speed adjustment range;

[0023] The power is adjusted according to the amplitude to be adjusted.

[0024] Optionally, in the present Czochralski single crystal pulling process, before acquiring characteristic data before the crystal length reaches a first preset length in the temperature adjustment stage and the seeding stage, the method further comprises:

[0025] When the crystal length reaches a first preset length in the seeding stage, the power is adjusted with a plurality of preset adjustment amplitudes to obtain a pulling speed adjustment amplitude corresponding to the plurality of preset adjustment amplitudes when the crystal length reaches a second preset length in the seeding stage;

[0026] According to the plurality of preset adjustment ranges and the corresponding pulling speed adjustment ranges, a relationship between the power adjustment range and the pulling speed adjustment range is determined when the crystal length reaches a first preset length in the seeding stage.

[0027] Optionally, determining the amplitude of power adjustment according to the predicted pulling speed, the preset pulling speed range, and the predetermined relationship between the power adjustment amplitude and the pulling speed adjustment amplitude includes:

[0028] When the predicted pulling speed is lower than the lower limit of the preset pulling speed range, the power reduction range is calculated according to the difference between the lower limit of the preset pulling speed range and the predicted pulling speed, and the relationship between the power adjustment range and the pulling speed adjustment range;

[0029] When the predicted pulling speed is higher than the upper limit of the preset pulling speed range, the amount by which the power needs to be increased is calculated according to the difference between the predicted pulling speed and the upper limit of the preset pulling speed range, and the relationship between the power adjustment range and the pulling speed adjustment range;

[0030] When the predicted pulling speed is within the preset pulling speed range, it is determined that the power does not need to be adjusted.

[0031] The embodiment of the present invention further discloses a pulling speed adjustment device, comprising:

[0032] A data acquisition module, used for acquiring characteristic data before the crystal length reaches a first preset length in the temperature adjustment stage and the seeding stage during the current CZ single crystal pulling process, wherein the characteristic data includes operation data related to the pulling speed in the seeding stage;

[0033] A data input module, used for inputting the characteristic data into a pulling speed prediction model, wherein the pulling speed prediction model is obtained by training the characteristic data samples before the crystal length reaches a first preset length in the temperature adjustment stage and the seeding stage, and the corresponding marked sample pulling speed when the crystal length reaches a second preset length in the seeding stage;

[0034] A pulling speed generating module, configured to generate a predicted pulling speed when the crystal length reaches a second preset length in the seeding stage according to the characteristic data and using the pulling speed prediction model;

[0035] The power adjustment module is used to adjust the power according to the predicted pulling speed and the preset pulling speed range, so as to adjust the pulling speed before the shoulder release stage of the current CZ single crystal pulling process to within the preset pulling speed range.

[0036] Optionally, the data acquisition module includes:

[0037] A data acquisition submodule, used for collecting the operation data multiple times in the temperature adjustment stage and the seeding stage;

[0038] A length detection submodule, used to detect the crystal length in the seeding stage;

[0039] The data collection submodule is used to use the operating data collected before the crystal length reaches the first preset length in the seeding stage as the characteristic data.

[0040] Optionally, the data input module includes:

[0041] A model starter module, used for starting the pulling speed prediction model when the crystal length reaches a first preset length in the seeding stage;

[0042] The data input submodule is used to input the characteristic data into the casting speed prediction model.

[0043] Optionally, the device further comprises:

[0044] A range determination module is used to determine the preset pulling speed range corresponding to when the wire breakage rate is lower than the preset value according to the historical pulling speed when the crystal length reaches the second preset length in the seeding stage and the corresponding historical wire breakage rate in the shoulder release stage before obtaining the characteristic data before the crystal length reaches the first preset length in the temperature adjustment stage and the seeding stage in the current straight crystal pulling process.

[0045] Optionally, the pulling speed adjustment module includes:

[0046] A magnitude determination submodule, used to determine the magnitude of power adjustment required according to the predicted pulling speed, the preset pulling speed range, and the relationship between the predetermined power adjustment magnitude and the pulling speed adjustment magnitude;

[0047] The power adjustment submodule is used to adjust the power according to the amplitude to be adjusted.

[0048] Optionally, the device further comprises:

[0049] An adjustment module, used for, before obtaining characteristic data before the crystal length reaches the first preset length in the temperature adjustment stage and the seeding stage during the current CZ single crystal pulling process, adjusting the power with multiple preset adjustment amplitudes when the crystal length reaches the first preset length in the seeding stage, so as to obtain the pulling speed adjustment amplitudes corresponding to the multiple preset adjustment amplitudes when the crystal length reaches the second preset length in the seeding stage;

[0050] The relationship determination module is used to determine the relationship between the power adjustment amplitude and the pulling speed adjustment amplitude when the crystal length reaches a first preset length in the seeding stage according to the multiple preset adjustment amplitudes and the corresponding pulling speed adjustment amplitudes.

[0051] Optionally, the power adjustment module includes:

[0052] a reduction amplitude calculation submodule, configured to calculate the amplitude of the power reduction when the predicted pulling speed is lower than the lower limit of the preset pulling speed range, according to the difference between the lower limit of the preset pulling speed range and the predicted pulling speed, and the relationship between the power adjustment amplitude and the pulling speed adjustment amplitude;

[0053] an increase amplitude calculation submodule, for calculating the amplitude of the power increase required according to the difference between the predicted pulling speed and the upper limit of the preset pulling speed range, and the relationship between the power adjustment amplitude and the pulling speed adjustment amplitude, when the predicted pulling speed is higher than the upper limit of the preset pulling speed range;

[0054] The no-adjustment determination submodule is used to determine that the power does not need to be adjusted when the predicted pulling speed is within the preset pulling speed range.

[0055] The embodiment of the present invention further discloses an electronic device, characterized in that it includes a processor, a communication interface, a memory and a communication bus, wherein the processor, the communication interface and the memory communicate with each other via the communication bus;

[0056] Memory, used to store computer programs;

[0057] The processor is used to implement the above-mentioned method steps when executing the program stored in the memory.

[0058] The embodiment of the present invention further discloses a readable storage medium. When the instructions in the storage medium are executed by the processor of the electronic device, the electronic device can execute one or more of the pulling speed adjustment methods described in the embodiment of the present invention.

[0059] The embodiments of the present invention include the following advantages:

[0060] According to an embodiment of the present invention, characteristic data before the crystal length reaches a first preset length in the temperature adjustment stage and the seeding stage during the current straight-crystal pulling process is obtained, wherein the characteristic data includes operation data related to the pulling speed in the seeding stage, and the characteristic data is input into a pulling speed prediction model, wherein the pulling speed prediction model is obtained by training characteristic data samples before the crystal length reaches the first preset length in the temperature adjustment stage and the seeding stage, and correspondingly marked sample pulling speeds when the crystal length reaches a second preset length in the seeding stage. According to the characteristic data, the pulling speed prediction model generates a predicted pulling speed when the crystal length reaches the second preset length in the seeding stage. According to the predicted pulling speed and the preset pulling speed range, the power is adjusted to adjust the pulling speed before the shoulder release stage of the current straight-crystal pulling process to within the preset pulling speed range, so that the pulling speed when the crystal length reaches the second preset length in the seeding stage can be predicted in advance, and the pulling speed is adjusted accordingly so that the pulling speed can be adjusted to within the preset pulling speed range, thereby avoiding the occurrence of problems such as line breakage in the shoulder release stage. BRIEF DESCRIPTION OF THE DRAWINGS

[0061] Figure 1 is a flow chart of steps of an embodiment of a method for adjusting a pulling speed according to the present invention;

[0062] Figure 2 is a flow chart of steps of an embodiment of a method for adjusting a pulling speed according to the present invention;

[0063] Figure 3 It is a structural block diagram of an embodiment of a pulling speed adjustment device of the present invention;

[0064] Figure 4 It is a structural block diagram of a computing device for adjusting pulling speed according to an exemplary embodiment. DETAILED DESCRIPTION

[0065] In order to make the above-mentioned objects, features and advantages of the present invention more obvious and easy to understand, the present invention is further described in detail below with reference to the accompanying drawings and specific embodiments.

[0066] Reference Figure 1 , shows a flowchart of a method for adjusting the pulling speed according to an embodiment of the present invention, which may specifically include the following steps:

[0067] Step 101, in the current CZ single crystal pulling process, characteristic data before the crystal length reaches a first preset length in the temperature adjustment stage and the seeding stage is obtained, wherein the characteristic data includes operation data related to the pulling speed in the seeding stage.

[0068] In the embodiment of the present invention, the Czochralski process is a process of refining raw materials into single crystals using the Czochralski method, for example, a process of Czochralski single crystal silicon. The Czochralski process can be divided into a temperature adjustment stage, a seeding stage, a shoulder release stage, and the like.

[0069] In an embodiment of the present invention, the process of pulling a single crystal directly includes operating data such as power, liquid level brightness, average crucible rotation, crucible position, feed amount, and crystal length. The operating data is the data monitored during actual operation, and may specifically include any applicable data, which is not limited by the embodiment of the present invention. After analyzing a large amount of data, it was found that the pulling speed in the seeding stage has a key influence on the wire breaking problem in the shoulder release stage, and the pulling speed in the seeding stage is related to some operating data in the temperature adjustment stage and the seeding stage. Through data analysis, the operating data related to the pulling speed in the seeding stage is screened out from the operating data in the temperature adjustment stage and the seeding stage as feature data.

[0070] For example, by using the historical big data accumulated by the process system in long-term production operation, such as process, material, process control and product quality characteristic parameter data, the core process factors affecting the pulling speed in the seeding stage and their corresponding parameter ranges or specific values ​​can be obtained through analysis of the pulling speed data in the seeding stage, and the appropriate machine learning model can be selected accordingly.

[0071] In an embodiment of the present invention, when the relevant process parameters are changed to control the pulling speed, the change in the pulling speed has a delay. Taking this into account, in order to adjust the pulling speed appropriately before the shoulder release stage, that is, in the later stage of the seeding stage, the embodiment of the present invention proposes to predict and adjust the pulling speed in the later stage of the seeding stage in the early stage of the seeding stage. According to the delay of the pulling speed change, characteristic data before the crystal length reaches the first preset length in the adjustment stage and the seeding stage is obtained, which is used to predict the pulling speed in the later stage of the seeding stage. Among them, when the crystal length reaches the first preset length in the seeding stage, the power of this direct pulling single crystal process is adjusted to ensure that the pulling speed can be adjusted appropriately in time before the shoulder release stage. The first preset length can be set according to practical needs. For example, the first preset length is 90 mm, and the embodiment of the present invention does not limit this.

[0072] Step 102, inputting the characteristic data into a pulling speed prediction model, wherein the pulling speed prediction model is obtained by training the characteristic data samples before the crystal length reaches a first preset length in the temperature adjustment stage and the seeding stage, and the corresponding marked sample pulling speed when the crystal length reaches a second preset length in the seeding stage.

[0073] In an embodiment of the present invention, the pulling speed in the later stage of the seeding stage can be predicted by machine learning, and a pulling speed prediction model that can predict the pulling speed is obtained based on the correlation between the characteristic data before the crystal length reaches the first preset length in the temperature adjustment stage and the seeding stage and the pulling speed when the crystal length reaches the second preset length in the seeding stage. Among them, the second preset length is the length reached by the crystal length in the later stage of the seeding stage, and specifically a length close to the shoulder release stage can be selected, for example, the second preset length is 150 mm, and the embodiment of the present invention does not limit this.

[0074] In order to train the pulling speed prediction model, accurate sample data and corresponding label data are required, that is, the characteristic data samples before the crystal length reaches the first preset length in the temperature adjustment stage and the seeding stage, and the sample pulling speed when the crystal length reaches the second preset length in the seeding stage with the corresponding label. Specifically, characteristic data samples and sample pulling speeds can be obtained through multiple experiments, or characteristic data samples and sample pulling speeds can be selected from historical data. Before training, the data is cleaned and organized first, and then the preset pulling speed model is trained.

[0075] In the embodiment of the present invention, the pulling speed prediction model may adopt the extreme gradient boosting (eXtreme Gradient Boosting, XGboost) model, which is a model that uses boosting trees for prediction on a large scale in parallel. Specifically, any applicable model may be adopted, and the embodiment of the present invention does not limit this.

[0076] In an embodiment of the present invention, in the prediction stage, the input of the pulling speed prediction model is the characteristic data before the crystal length reaches the first preset length in the temperature adjustment stage and the crystal seeding stage, and the output is the predicted value of the pulling speed when the crystal length reaches the second preset length in the crystal seeding stage, which is recorded as the predicted pulling speed.

[0077] Step 103: Based on the characteristic data, the pulling speed prediction model generates a predicted pulling speed when the crystal length reaches a second preset length in the seeding stage.

[0078] In an embodiment of the present invention, for this direct pulling single crystal process, after obtaining the current characteristic data, the obtained characteristic data is input into a pulling speed prediction model to obtain the output of the pulling speed prediction model, and then the output of the pulling speed prediction model is used as the predicted pulling speed when the crystal length reaches a second preset length in the seeding stage.

[0079] Step 104, adjusting the power according to the predicted pulling speed and the preset pulling speed range, so as to adjust the pulling speed before the shoulder release stage of the current CZ single crystal pulling process to within the preset pulling speed range.

[0080] In the embodiment of the present invention, the pulling speed is controlled before the shoulder release stage. The relationship between the pulling speed and the wire breakage rate in the shoulder release stage is analyzed by data, and a preset pulling speed range that makes the wire breakage rate low or lowest is determined in advance.

[0081] In the embodiment of the present invention, power is the power of the single crystal furnace, which has the greatest impact on the pulling speed. According to the predicted pulling speed and the preset pulling speed range, the power is adjusted so that the pulling speed changes to within the preset pulling speed range. If the predicted pulling speed is higher than the upper limit of the preset pulling speed range, the pulling speed is lowered by adjusting the power. If the predicted pulling speed is lower than the lower limit of the preset pulling speed range, the pulling speed is increased by adjusting the power. When adjusting the power, the adjustment amount is related to the degree to which the predicted pulling speed deviates from the preset pulling speed range. Generally, the greater the degree to which the predicted pulling speed deviates from the preset pulling speed range, the greater the adjustment amount of the power.

[0082] According to an embodiment of the present invention, characteristic data before the crystal length reaches a first preset length in the temperature adjustment stage and the seeding stage during the current straight-crystal pulling process is obtained, wherein the characteristic data includes operation data related to the pulling speed in the seeding stage, and the characteristic data is input into a pulling speed prediction model, wherein the pulling speed prediction model is obtained by training characteristic data samples before the crystal length reaches the first preset length in the temperature adjustment stage and the seeding stage, and correspondingly marked sample pulling speeds when the crystal length reaches a second preset length in the seeding stage. According to the characteristic data, the pulling speed prediction model generates a predicted pulling speed when the crystal length reaches the second preset length in the seeding stage. According to the predicted pulling speed and the preset pulling speed range, the power is adjusted to adjust the pulling speed before the shoulder release stage of the current straight-crystal pulling process to within the preset pulling speed range, so that the pulling speed when the crystal length reaches the second preset length in the seeding stage can be predicted in advance, and the pulling speed is adjusted accordingly so that the pulling speed can be adjusted to within the preset pulling speed range, thereby avoiding the occurrence of problems such as line breakage in the shoulder release stage.

[0083] In an optional embodiment of the present invention, before step 101, it may also include: determining the preset pulling speed range corresponding to when the wire breakage rate is lower than the preset value based on the historical pulling speed when the crystal length reaches the second preset length in the seeding stage and the corresponding historical wire breakage rate in the shoulder release stage.

[0084] The historical pulling speed when the crystal length reaches the second preset length in the seeding stage during the history of the straight single crystal pulling process, and the corresponding historical wire breakage rate in the shouldering stage are obtained in advance. Through big data analysis, it is obtained that when the crystal length reaches the second preset length in the seeding stage, the preset pulling speed range when the wire breakage rate in the shouldering stage is lower than the preset value. Among them, the preset value can be set according to actual needs, and the embodiment of the present invention does not limit this. In a specific implementation method, the preset pulling speed range when the wire breakage rate in the shouldering stage is the lowest is determined. For example, when the crystal length reaches 150 mm, the preset pulling speed range with the lowest wire breakage rate is [A, B].

[0085] Reference Figure 2 , shows a flowchart of a method for adjusting the pulling speed according to an embodiment of the present invention, which may specifically include the following steps:

[0086] Step 201 : collecting the operation data multiple times in the temperature adjustment stage and the seeding stage.

[0087] In an embodiment of the present invention, the operation data is collected multiple times in the temperature adjustment stage and the seeding stage. For example, the operation data of an industrial control module such as a PLC (Programmable Logic Controller) is read through a visual system, and the data is collected multiple times and saved locally.

[0088] Step 202, detecting the crystal length in the seeding stage.

[0089] In an embodiment of the present invention, the crystal length in the seeding stage is detected. For example, the operating data includes the crystal length, and the crystal length is collected at a higher frequency, thereby achieving real-time detection of the crystal length.

[0090] Step 203 , using the operating data collected before the crystal length reaches a first preset length during the seeding stage as the characteristic data.

[0091] In the embodiment of the present invention, before the crystal length reaches the first preset length, the collection of operating data is maintained until the crystal length reaches the first preset length in the seeding stage. Then, the operating data collected before the crystal length reaches the first preset length in the seeding stage is used as the input of the pulling speed prediction model, i.e., characteristic data.

[0092] Step 204 , when the crystal length reaches a first preset length during the seeding stage, the pulling speed prediction model is started.

[0093] In an embodiment of the present invention, after the pulling speed prediction model is trained, the trained pulling speed prediction model is packaged into an executable file and deployed on an industrial computer of a single crystal furnace. When the crystal length reaches a first preset length during the seeding stage, the deployed pulling speed prediction model is started.

[0094] Step 205: input the characteristic data into the casting speed prediction model.

[0095] In the embodiment of the present invention, the specific implementation method of this step can refer to the description in the above embodiment and will not be repeated here.

[0096] Step 206: Based on the characteristic data, the pulling speed prediction model generates a predicted pulling speed when the crystal length reaches a second preset length in the seeding stage.

[0097] In the embodiment of the present invention, the specific implementation method of this step can refer to the description in the above embodiment and will not be repeated here.

[0098] Step 207, determining the amplitude of power adjustment required according to the predicted pulling speed, the preset pulling speed range, and the predetermined relationship between the power adjustment amplitude and the pulling speed adjustment amplitude.

[0099] In the embodiment of the present invention, in order to more accurately determine the amplitude of power adjustment, the relationship between the power adjustment amplitude and the pulling speed adjustment amplitude is predetermined. After the amplitude of pulling speed adjustment is determined according to the preset pulling speed and the preset pulling speed range, the amplitude of power adjustment can be determined in combination with the predetermined relationship between the power adjustment amplitude and the pulling speed adjustment amplitude.

[0100] There are many ways to determine the relationship between the power adjustment range and the pulling speed adjustment range. For example, a big data analysis is performed based on historical data to obtain a functional relationship between the power adjustment range and the pulling speed adjustment range.

[0101] In an optional embodiment of the present invention, before obtaining characteristic data before the crystal length reaches the first preset length in the temperature control stage and the crystal seeding stage during the current straight crystal pulling process, in a specific implementation method, it can also include: when the crystal length reaches the first preset length in the crystal seeding stage, adjusting the power with multiple preset adjustment amplitudes to obtain the pulling speed adjustment amplitudes corresponding to the multiple preset adjustment amplitudes when the crystal length reaches the second preset length in the crystal seeding stage; determining the relationship between the power adjustment amplitude and the pulling speed adjustment amplitude when the crystal length reaches the first preset length in the crystal seeding stage based on the multiple preset adjustment amplitudes and the corresponding pulling speed adjustment amplitudes.

[0102] One way to determine the relationship between the power adjustment amplitude and the drawing speed adjustment amplitude is to, through experimental design, when the crystal length reaches the first preset length in the crystal seeding stage, adjust the power with multiple preset adjustment amplitudes, and record the drawing speed adjustment amplitude when the crystal length reaches the second preset length corresponding to each preset adjustment amplitude. Then perform linear fitting to obtain the relationship between the power adjustment amplitude and the drawing speed adjustment amplitude.

[0103] For example, design 10 groups of experiments, with 10 preset power decreases: 0.1, 0.2, 0.3, ……, 1. When the crystal length reaches 90 mm in the crystal seeding stage, perform power reduction, and record the power reduction when the crystal length reaches 150 mm in the crystal seeding stage. Perform linear fitting to obtain the relationship between the power adjustment amplitude and the drawing speed adjustment amplitude K = P / S, where P is the power reduction, S is the average drawing speed reduction, and K is the coefficient of the two.

[0104] In an alternative embodiment of the present invention, in a specific implementation manner of determining the amplitude of power to be adjusted according to the predicted drawing speed, the preset drawing speed range, and the previously determined relationship between the power adjustment amplitude and the drawing speed adjustment amplitude, it may include: when the predicted drawing speed is lower than the lower limit of the preset drawing speed range, calculate the amplitude of power to be reduced according to the difference between the lower limit of the preset drawing speed range and the predicted drawing speed, and the relationship between the power adjustment amplitude and the drawing speed adjustment amplitude; when the predicted drawing speed is higher than the upper limit of the preset drawing speed range, calculate the amplitude of power to be increased according to the difference between the predicted drawing speed and the upper limit of the preset drawing speed range, and the relationship between the power adjustment amplitude and the drawing speed adjustment amplitude; when the predicted drawing speed is within the preset drawing speed range, determine that the power does not need to be adjusted.

[0105] Compare the predicted drawing speed with the preset drawing speed range. When the predicted drawing speed is lower than the lower limit of the preset drawing speed range, reduce the power. Specifically, first calculate the difference between the lower limit of the preset drawing speed range and the predicted drawing speed, and then calculate the amplitude of power to be reduced according to the difference and the relationship between the power adjustment amplitude and the drawing speed adjustment amplitude.

[0106] When the predicted drawing speed is higher than the upper limit of the preset drawing speed range, increase the power. Specifically, first calculate the difference between the predicted drawing speed and the upper limit of the preset drawing speed range, and then calculate the amplitude of power to be increased according to the difference and the relationship between the power adjustment amplitude and the drawing speed adjustment amplitude.

[0107] For example, the predicted drawing speed is M and the preset drawing speed range is [A, B]. When M < A, the amplitude of power to be reduced is (A - M) × K. When M > B, the amplitude of power to be increased is (M - B) × K. When A < M < B, the power is not adjusted.

[0108] Step 208: adjusting the power according to the amplitude to be adjusted.

[0109] In the embodiment of the present invention, when the amplitude to be reduced is determined, the power is reduced accordingly. When the amplitude to be increased is determined, the power is increased accordingly. For example, the visual system sends the adjusted power to the control system for power adjustment.

[0110] According to an embodiment of the present invention, the operating data is collected multiple times in the temperature adjustment stage and the crystal seeding stage, the crystal length in the crystal seeding stage is detected, and the operating data collected before the crystal length in the crystal seeding stage reaches a first preset length is used as the characteristic data. When the crystal length in the crystal seeding stage reaches the first preset length, the pulling speed prediction model is started, and the characteristic data is input into the pulling speed prediction model. According to the characteristic data, the pulling speed prediction model generates a predicted pulling speed when the crystal length in the crystal seeding stage reaches a second preset length. According to the predicted pulling speed, the preset pulling speed range, and the relationship between the predetermined power adjustment range and the pulling speed adjustment range, the amplitude of the power adjustment is determined. According to the amplitude to be adjusted, the power is adjusted so that the pulling speed when the crystal length in the crystal seeding stage reaches the second preset length can be predicted in advance, and the pulling speed is adjusted accordingly so that the pulling speed can be adjusted to within the preset pulling speed range, thereby avoiding the occurrence of problems such as wire breakage in the shoulder release stage.

[0111] It should be noted that, for the sake of simplicity, the method embodiments are described as a series of action combinations, but those skilled in the art should be aware that the embodiments of the present invention are not limited by the order of the actions described, because according to the embodiments of the present invention, certain steps can be performed in other orders or simultaneously. Secondly, those skilled in the art should also be aware that the embodiments described in the specification are all preferred embodiments, and the actions involved are not necessarily required by the embodiments of the present invention.

[0112] Reference Figure 3 , shows a structural block diagram of an embodiment of a pulling speed adjustment device of the present invention, which may specifically include the following modules:

[0113] The data acquisition module 301 is used to acquire characteristic data before the crystal length reaches a first preset length in the temperature adjustment stage and the seeding stage during the current CZ single crystal pulling process, wherein the characteristic data includes operation data related to the pulling speed in the seeding stage;

[0114] A data input module 302 is used to input the characteristic data into a pulling speed prediction model, wherein the pulling speed prediction model is obtained by training the characteristic data samples before the crystal length reaches a first preset length in the temperature adjustment stage and the seeding stage, and the corresponding marked sample pulling speed when the crystal length reaches a second preset length in the seeding stage;

[0115] A pulling speed generating module 303, configured to generate a predicted pulling speed when the crystal length reaches a second preset length in the seeding stage according to the characteristic data and using the pulling speed prediction model;

[0116] The power adjustment module 304 is used to adjust the power according to the predicted pulling speed and the preset pulling speed range, so as to adjust the pulling speed before the shoulder release stage of the current CZ single crystal pulling process to within the preset pulling speed range.

[0117] In the embodiment of the present invention, optionally, the data acquisition module includes:

[0118] A data acquisition submodule, used for collecting the operation data multiple times in the temperature adjustment stage and the seeding stage;

[0119] A length detection submodule, used to detect the crystal length in the seeding stage;

[0120] The data collection submodule is used to use the operating data collected before the crystal length reaches the first preset length in the seeding stage as the characteristic data.

[0121] In the embodiment of the present invention, optionally, the data input module includes:

[0122] A model starter module, used for starting the pulling speed prediction model when the crystal length reaches a first preset length in the seeding stage;

[0123] The data input submodule is used to input the characteristic data into the casting speed prediction model.

[0124] In the embodiment of the present invention, optionally, the device further includes:

[0125] A range determination module is used to determine the preset pulling speed range corresponding to when the wire breakage rate is lower than the preset value according to the historical pulling speed when the crystal length reaches the second preset length in the seeding stage and the corresponding historical wire breakage rate in the shoulder release stage before obtaining the characteristic data before the crystal length reaches the first preset length in the temperature adjustment stage and the seeding stage in the current straight crystal pulling process.

[0126] In the embodiment of the present invention, optionally, the pulling speed adjustment module includes:

[0127] A magnitude determination submodule, used to determine the magnitude of power adjustment required according to the predicted pulling speed, the preset pulling speed range, and the relationship between the predetermined power adjustment magnitude and the pulling speed adjustment magnitude;

[0128] The power adjustment submodule is used to adjust the power according to the amplitude to be adjusted.

[0129] In the embodiment of the present invention, optionally, the device further includes:

[0130] An adjustment module, used for, before obtaining characteristic data before the crystal length reaches the first preset length in the temperature adjustment stage and the seeding stage during the current CZ single crystal pulling process, adjusting the power with multiple preset adjustment amplitudes when the crystal length reaches the first preset length in the seeding stage, so as to obtain the pulling speed adjustment amplitudes corresponding to the multiple preset adjustment amplitudes when the crystal length reaches the second preset length in the seeding stage;

[0131] The relationship determination module is used to determine the relationship between the power adjustment amplitude and the pulling speed adjustment amplitude when the crystal length reaches a first preset length in the seeding stage according to the multiple preset adjustment amplitudes and the corresponding pulling speed adjustment amplitudes.

[0132] In the embodiment of the present invention, optionally, the power adjustment module includes:

[0133] a reduction amplitude calculation submodule, configured to calculate the amplitude of the power reduction when the predicted pulling speed is lower than the lower limit of the preset pulling speed range, according to the difference between the lower limit of the preset pulling speed range and the predicted pulling speed, and the relationship between the power adjustment amplitude and the pulling speed adjustment amplitude;

[0134] an increase amplitude calculation submodule, for calculating the amplitude of the power increase required according to the difference between the predicted pulling speed and the upper limit of the preset pulling speed range, and the relationship between the power adjustment amplitude and the pulling speed adjustment amplitude, when the predicted pulling speed is higher than the upper limit of the preset pulling speed range;

[0135] The no-adjustment determination submodule is used to determine that the power does not need to be adjusted when the predicted pulling speed is within the preset pulling speed range.

[0136] According to an embodiment of the present invention, characteristic data before the crystal length reaches a first preset length in the temperature adjustment stage and the seeding stage during the current straight-crystal pulling process is obtained, wherein the characteristic data includes operation data related to the pulling speed in the seeding stage, and the characteristic data is input into a pulling speed prediction model, wherein the pulling speed prediction model is obtained by training characteristic data samples before the crystal length reaches the first preset length in the temperature adjustment stage and the seeding stage, and correspondingly marked sample pulling speeds when the crystal length reaches a second preset length in the seeding stage. According to the characteristic data, the pulling speed prediction model generates a predicted pulling speed when the crystal length reaches the second preset length in the seeding stage. According to the predicted pulling speed and the preset pulling speed range, the power is adjusted to adjust the pulling speed before the shoulder release stage of the current straight-crystal pulling process to within the preset pulling speed range, so that the pulling speed when the crystal length reaches the second preset length in the seeding stage can be predicted in advance, and the pulling speed is adjusted accordingly so that the pulling speed can be adjusted to within the preset pulling speed range, thereby avoiding the occurrence of problems such as line breakage in the shoulder release stage.

[0137] As for the device embodiment, since it is basically similar to the method embodiment, the description is relatively simple, and the relevant parts can be referred to the partial description of the method embodiment.

[0138] Figure 4 4 is a block diagram of an electronic device 400 for adjusting the pull speed according to an exemplary embodiment. For example, the electronic device 400 may be a mobile phone, a computer, a digital broadcast terminal, a messaging device, a game console, a tablet device, a medical device, a fitness device, a personal digital assistant, etc.

[0139] Reference Figure 4 , the electronic device 400 may include one or more of the following components: a processing component 402 , a memory 404 , a power component 406 , a multimedia component 408 , an audio component 410 , an input / output (I / O) interface 412 , a sensor component 414 , and a communication component 416 .

[0140] The processing component 402 generally controls the overall operation of the electronic device 400, such as operations associated with display, phone calls, data communications, camera operations, and recording operations. The processing component 402 may include one or more processors 420 to execute instructions to complete all or part of the steps of the above-mentioned speed adjustment method. In addition, the processing component 402 may include one or more modules to facilitate the interaction between the processing component 402 and other components. For example, the processing component 402 may include a multimedia module to facilitate the interaction between the multimedia component 408 and the processing component 402.

[0141] The memory 404 is configured to store various types of data to support operations on the device 400. Examples of such data include instructions for any application or method operating on the electronic device 400, contact data, phone book data, messages, pictures, videos, etc. The memory 404 can be implemented by any type of volatile or non-volatile storage device or a combination thereof, such as static random access memory (SRAM), electrically erasable programmable read-only memory (EEPROM), erasable programmable read-only memory (EPROM), programmable read-only memory (PROM), read-only memory (ROM), magnetic memory, flash memory, magnetic disk or optical disk.

[0142] The power component 404 provides power to the various components of the electronic device 400. The power component 404 may include a power management system, one or more power supplies, and other components associated with generating, managing, and distributing power to the electronic device 400.

[0143] The multimedia component 408 includes a screen that provides an output interface between the electronic device 400 and the user. In some embodiments, the screen may include a liquid crystal display (LCD) and a touch panel (TP). If the screen includes a touch panel, the screen may be implemented as a touch screen to receive input signals from the user. The touch panel includes one or more touch sensors to sense touch, slide, and gestures on the touch panel. The touch sensor may not only sense the boundaries of the touch or slide action, but also detect the duration and pressure associated with the touch or slide operation. In some embodiments, the multimedia component 408 includes a front camera and / or a rear camera. When the electronic device 400 is in an operating mode, such as a shooting mode or a video mode, the front camera and / or the rear camera may receive external multimedia data. Each front camera and the rear camera may be a fixed optical lens system or have a focal length and optical zoom capability.

[0144] The audio component 410 is configured to output and / or input audio signals. For example, the audio component 410 includes a microphone (MIC), and when the electronic device 400 is in an operating mode, such as a call mode, a recording mode, and a voice recognition mode, the microphone is configured to receive an external audio signal. The received audio signal can be further stored in the memory 404 or sent via the communication component 416. In some embodiments, the audio component 410 also includes a speaker for outputting audio signals.

[0145] I / O interface 412 provides an interface between processing component 402 and peripheral interface modules, such as keyboards, click wheels, buttons, etc. These buttons may include but are not limited to: a home button, a volume button, a start button, and a lock button.

[0146] The sensor assembly 414 includes one or more sensors for providing various aspects of status assessment for the electronic device 400. For example, the sensor assembly 414 can detect the open / closed state of the device 400, the relative positioning of components, such as the display and keypad of the electronic device 400, and the sensor assembly 414 can also detect the position change of the electronic device 400 or a component of the electronic device 400, the presence or absence of user contact with the electronic device 400, the orientation or acceleration / deceleration of the electronic device 400, and the temperature change of the electronic device 400. The sensor assembly 414 may include a proximity sensor configured to detect the presence of nearby objects without any physical contact. The sensor assembly 414 may also include an optical sensor, such as a CMOS or CCD image sensor, for use in imaging applications. In some embodiments, the sensor assembly 414 may also include an acceleration sensor, a gyroscope sensor, a magnetic sensor, a pressure sensor, or a temperature sensor.

[0147] The communication component 416 is configured to facilitate wired or wireless communication between the electronic device 400 and other devices. The electronic device 400 can access a wireless network based on a communication standard, such as WiFi, 2G or 3G, or a combination thereof. In an exemplary embodiment, the communication component 414 receives a broadcast signal or broadcast-related information from an external broadcast management system via a broadcast channel. In an exemplary embodiment, the communication component 414 also includes a near field communication (NFC) module to facilitate short-range communication. For example, the NFC module can be implemented based on radio frequency identification (RFID) technology, infrared data association (IrDA) technology, ultra-wideband (UWB) technology, Bluetooth (BT) technology and other technologies.

[0148] In an exemplary embodiment, the electronic device 400 can be implemented by one or more application-specific integrated circuits (ASICs), digital signal processors (DSPs), digital signal processing devices (DSPDs), programmable logic devices (PLDs), field programmable gate arrays (FPGAs), controllers, microcontrollers, microprocessors or other electronic components to perform the above-mentioned pulling speed adjustment method.

[0149] In an exemplary embodiment, a non-transitory computer-readable storage medium including instructions is also provided, such as a memory 404 including instructions, and the instructions can be executed by a processor 420 of an electronic device 400 to complete the above-mentioned speed adjustment method. For example, the non-transitory computer-readable storage medium can be a ROM, a random access memory (RAM), a CD-ROM, a magnetic tape, a floppy disk, an optical data storage device, etc.

[0150] A non-transitory computer-readable storage medium, when the instructions in the storage medium are executed by a processor of a terminal, enables the terminal to perform a speed adjustment method, the method comprising:

[0151] In this CZ single crystal pulling process, characteristic data before the crystal length reaches a first preset length in the temperature adjustment stage and the seeding stage are obtained, wherein the characteristic data includes operation data related to the pulling speed in the seeding stage;

[0152] The characteristic data is input into a pulling speed prediction model, wherein the pulling speed prediction model is obtained by training the characteristic data samples before the crystal length reaches a first preset length in the temperature adjustment stage and the seeding stage, and the corresponding marked sample pulling speed when the crystal length reaches a second preset length in the seeding stage;

[0153] According to the characteristic data, the pulling speed prediction model generates a predicted pulling speed when the crystal length reaches a second preset length in the seeding stage;

[0154] The power is adjusted according to the predicted pulling speed and the preset pulling speed range to adjust the pulling speed before the shoulder release stage of the current CZ single crystal pulling process to within the preset pulling speed range.

[0155] Optionally, in the present CZ single crystal pulling process, obtaining characteristic data before the crystal length reaches a first preset length in the temperature adjustment stage and the seeding stage includes:

[0156] In the temperature adjustment stage and the seeding stage, the operation data is collected multiple times;

[0157] detecting the crystal length in the seeding stage;

[0158] The operating data collected before the crystal length reaches the first preset length in the seeding stage is used as the characteristic data.

[0159] Optionally, inputting the characteristic data into a casting speed prediction model comprises:

[0160] When the crystal length reaches a first preset length in the seeding stage, starting the pulling speed prediction model;

[0161] The characteristic data is input into the casting speed prediction model.

[0162] Optionally, in the present Czochralski single crystal pulling process, before acquiring characteristic data before the crystal length reaches a first preset length in the temperature adjustment stage and the seeding stage, the method further comprises:

[0163] According to the historical pulling speed when the crystal length reaches the second preset length in the seeding stage and the corresponding historical wire breakage rate in the shoulder release stage, the preset pulling speed range corresponding to the wire breakage rate being lower than the preset value is determined.

[0164] Optionally, the adjusting the power according to the predicted pulling speed and the preset pulling speed range to adjust the pulling speed before the shoulder release stage of the current CZ single crystal pulling process to within the preset pulling speed range includes:

[0165] Determining the power adjustment range according to the predicted pulling speed, the preset pulling speed range, and the predetermined relationship between the power adjustment range and the pulling speed adjustment range;

[0166] The power is adjusted according to the amplitude to be adjusted.

[0167] Optionally, in the present Czochralski single crystal pulling process, before acquiring characteristic data before the crystal length reaches a first preset length in the temperature adjustment stage and the seeding stage, the method further comprises:

[0168] When the crystal length reaches a first preset length in the seeding stage, the power is adjusted with a plurality of preset adjustment amplitudes to obtain a pulling speed adjustment amplitude corresponding to the plurality of preset adjustment amplitudes when the crystal length reaches a second preset length in the seeding stage;

[0169] According to the plurality of preset adjustment ranges and the corresponding pulling speed adjustment ranges, a relationship between the power adjustment range and the pulling speed adjustment range is determined when the crystal length reaches a first preset length in the seeding stage.

[0170] Optionally, determining the amplitude of power adjustment according to the predicted pulling speed, the preset pulling speed range, and the predetermined relationship between the power adjustment amplitude and the pulling speed adjustment amplitude includes:

[0171] When the predicted pulling speed is lower than the lower limit of the preset pulling speed range, the power reduction range is calculated according to the difference between the lower limit of the preset pulling speed range and the predicted pulling speed, and the relationship between the power adjustment range and the pulling speed adjustment range;

[0172] When the predicted pulling speed is higher than the upper limit of the preset pulling speed range, the amount by which the power needs to be increased is calculated according to the difference between the predicted pulling speed and the upper limit of the preset pulling speed range, and the relationship between the power adjustment range and the pulling speed adjustment range;

[0173] When the predicted pulling speed is within the preset pulling speed range, it is determined that the power does not need to be adjusted.

[0174] The various embodiments in this specification are described in a progressive manner, and each embodiment focuses on the differences from other embodiments. The same or similar parts between the various embodiments can be referenced to each other.

[0175] It will be appreciated by those skilled in the art that the embodiments of the present invention may be provided as methods, devices, or computer program products. Therefore, the embodiments of the present invention may take the form of a complete hardware embodiment, a complete software embodiment, or an embodiment combining software and hardware. Moreover, the embodiments of the present invention may take the form of a computer program product implemented on one or more computer-usable storage media (including but not limited to disk storage, CD-ROM, optical storage, etc.) containing computer-usable program codes.

[0176] The embodiments of the present invention are described with reference to the flowcharts and / or block diagrams of the methods, terminal devices (systems), and computer program products according to the embodiments of the present invention. It should be understood that each process and / or block in the flowchart and / or block diagram, as well as the combination of the processes and / or blocks in the flowchart and / or block diagram, can be implemented by computer program instructions. These computer program instructions can be provided to a processor of a general-purpose computer, a special-purpose computer, an embedded processor, or other programmable data processing terminal device to generate a machine, so that the instructions executed by the processor of the computer or other programmable data processing terminal device generate instructions for implementing the processes in the flowchart and / or block diagram. Figure 1 A process or multiple processes and / or boxes Figure 1 A device that provides the functions specified in a block or multiple blocks.

[0177] These computer program instructions may also be stored in a computer readable memory capable of directing a computer or other programmable data processing terminal device to operate in a predictable manner, so that the instructions stored in the computer readable memory produce a manufactured product including an instruction device, which implements the process Figure 1 A process or multiple processes and / or boxes Figure 1 A function specified in one or more boxes.

[0178] These computer program instructions can also be loaded onto a computer or other programmable data processing terminal device so that a series of operating steps are executed on the computer or other programmable terminal device to produce a computer-implemented process, thereby providing instructions for executing on the computer or other programmable terminal device to implement the process. Figure 1 A process or multiple processes and / or boxes Figure 1 The steps for the functions specified in one or more boxes.

[0179] Although the preferred embodiments of the present invention have been described, those skilled in the art may make other changes and modifications to these embodiments once they have learned the basic creative concept. Therefore, the appended claims are intended to be interpreted as including the preferred embodiments and all changes and modifications that fall within the scope of the embodiments of the present invention.

[0180] Finally, it should be noted that, in this article, relational terms such as first and second, etc. are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Moreover, the terms "include", "comprise" or any other variants thereof are intended to cover non-exclusive inclusion, so that a process, method, article or terminal device including a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, article or terminal device. In the absence of further restrictions, the elements defined by the sentence "comprise a ..." do not exclude the existence of other identical elements in the process, method, article or terminal device including the elements.

[0181] The above is a detailed introduction to a pulling speed adjustment method and device, an electronic device and a readable storage medium provided by the present invention. Specific examples are used in this article to illustrate the principles and implementation methods of the present invention. The description of the above embodiments is only used to help understand the method of the present invention and its core idea; at the same time, for general technical personnel in this field, according to the idea of ​​the present invention, there will be changes in the specific implementation method and application scope. In summary, the content of this specification should not be understood as a limitation on the present invention.

Claims

1. A method for adjusting the pulling speed, characterized in that: include: In this CZ single crystal pulling process, characteristic data before the crystal length reaches a first preset length in the temperature adjustment stage and the seeding stage are obtained, wherein the characteristic data includes operation data related to the pulling speed in the seeding stage; The characteristic data is input into a pulling speed prediction model, wherein the pulling speed prediction model is obtained by training the characteristic data samples before the crystal length reaches a first preset length in the temperature adjustment stage and the seeding stage, and the corresponding marked sample pulling speed when the crystal length reaches a second preset length in the seeding stage; According to the characteristic data, the pulling speed prediction model generates a predicted pulling speed when the crystal length reaches a second preset length in the seeding stage; The power is adjusted according to the predicted pulling speed and the preset pulling speed range to adjust the pulling speed before the shoulder release stage of the current CZ single crystal pulling process to within the preset pulling speed range.

2. The method according to claim 1, characterized in that In the present CZ single crystal pulling process, the characteristic data before the crystal length reaches the first preset length in the temperature adjustment stage and the seeding stage is obtained, including: In the temperature adjustment stage and the seeding stage, the operation data is collected multiple times; detecting the crystal length in the seeding stage; The operating data collected before the crystal length reaches the first preset length in the seeding stage is used as the characteristic data.

3. The method according to claim 2, characterized in that The step of inputting the characteristic data into a casting speed prediction model comprises: When the crystal length reaches a first preset length in the seeding stage, starting the pulling speed prediction model; The characteristic data is input into the casting speed prediction model.

4. The method according to claim 1, characterized in that Before obtaining characteristic data before the crystal length reaches a first preset length in the temperature adjustment stage and the seeding stage during the current CZ single crystal pulling process, the method further includes: According to the historical pulling speed when the crystal length reaches the second preset length in the seeding stage and the corresponding historical wire breakage rate in the shoulder release stage, the preset pulling speed range corresponding to the wire breakage rate being lower than the preset value is determined.

5. The method according to claim 1, characterized in that The power is adjusted according to the predicted pulling speed and the preset pulling speed range to adjust the pulling speed before the shoulder release stage of the current CZ single crystal pulling process to within the preset pulling speed range, including: Determine the power adjustment range according to the predicted pulling speed, the preset pulling speed range, and the predetermined relationship between the power adjustment range and the pulling speed adjustment range; The power is adjusted according to the amplitude to be adjusted.

6. The method according to claim 5, characterized in that Before obtaining characteristic data before the crystal length reaches a first preset length in the temperature adjustment stage and the seeding stage during the current CZ single crystal pulling process, the method further includes: When the crystal length reaches a first preset length in the seeding stage, the power is adjusted with a plurality of preset adjustment amplitudes to obtain a pulling speed adjustment amplitude corresponding to the plurality of preset adjustment amplitudes when the crystal length reaches a second preset length in the seeding stage; According to the plurality of preset adjustment ranges and the corresponding pulling speed adjustment ranges, a relationship between the power adjustment range and the pulling speed adjustment range is determined when the crystal length reaches a first preset length in the seeding stage.

7. The method according to claim 5, characterized in that The step of determining the power adjustment range based on the predicted pulling speed, the preset pulling speed range, and the predetermined relationship between the power adjustment range and the pulling speed adjustment range includes: When the predicted pulling speed is lower than the lower limit of the preset pulling speed range, the power reduction range is calculated according to the difference between the lower limit of the preset pulling speed range and the predicted pulling speed, and the relationship between the power adjustment range and the pulling speed adjustment range; When the predicted pulling speed is higher than the upper limit of the preset pulling speed range, the amount by which the power needs to be increased is calculated according to the difference between the predicted pulling speed and the upper limit of the preset pulling speed range, and the relationship between the power adjustment range and the pulling speed adjustment range; When the predicted pulling speed is within the preset pulling speed range, it is determined that the power does not need to be adjusted.

8. A pulling speed adjustment device, characterized in that: include: A data acquisition module, used for acquiring characteristic data before the crystal length reaches a first preset length in the temperature adjustment stage and the seeding stage during the current CZ single crystal pulling process, wherein the characteristic data includes operation data related to the pulling speed in the seeding stage; A data input module, used for inputting the characteristic data into a pulling speed prediction model, wherein the pulling speed prediction model is obtained by training the characteristic data samples before the crystal length reaches a first preset length in the temperature adjustment stage and the seeding stage, and the corresponding marked sample pulling speed when the crystal length reaches a second preset length in the seeding stage; A pulling speed generating module, configured to generate a predicted pulling speed when the crystal length reaches a second preset length in the seeding stage according to the characteristic data and using the pulling speed prediction model; The power adjustment module is used to adjust the power according to the predicted pulling speed and the preset pulling speed range, so as to adjust the pulling speed before the shoulder release stage of the current CZ single crystal pulling process to within the preset pulling speed range.

9. An electronic device, characterized in that: It includes a processor, a communication interface, a memory and a communication bus, wherein the processor, the communication interface and the memory communicate with each other through the communication bus; Memory, used to store computer programs; A processor, for implementing the method steps described in any one of claims 1 to 7 when executing a program stored in a memory.

10. A readable storage medium, characterized in that: When the instructions in the storage medium are executed by a processor of an electronic device, the electronic device is enabled to execute the pulling speed adjustment method as described in one or more of method claims 1-7.

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