Substrate processing method and substrate processing apparatus

Abstract

The present invention provides a substrate processing method and a substrate processing apparatus capable of inhibiting generation of particles at or near a center position of a substrate surface. The substrate processing method has (A) to (D) below. (A) supplying a processing liquid to a center position of a rotating substrate surface. (B) moving the supply position of the processing liquid from the center position to a first eccentric position. (C) stopping the supply position of the processing liquid at the first eccentric position, and supplying a replacement liquid for replacing the processing liquid to a second eccentric position different from the first eccentric position. (D) moving the supply position of the processing liquid from the first eccentric position in a direction opposite to the center position, and moving the supply position of the replacement liquid from the second eccentric position to the center position.

Description

[0001] This case is filed on the date of application. February 22, 2021 Application number 202180017221.8, invention title: Substrate processing Methods and substrate processing apparatus A divisional application of the patent application. Technical Field

[0002] This invention relates to a substrate processing method and a substrate processing apparatus. Background Technology

[0003] Patent Document 1 discloses a substrate processing apparatus that supplies a processing liquid directly above the center of the substrate surface, forming a liquid film of the processing liquid across the entire substrate surface. Then, a replacement liquid for displacing the processing liquid is supplied directly above the center, forming a liquid film of the replacement liquid across the entire substrate surface. During the supply of the replacement liquid, the substrate processing apparatus replenishes the processing liquid at a position further outward than the supply position of the replacement liquid.

[0004] Existing technical documents

[0005] Patent documents

[0006] Patent Document 1: Japanese Patent No. 6118758 Summary of the Invention

[0007] The technical problem that the invention aims to solve

[0008] One aspect of the present invention provides a technique capable of suppressing the generation of particles at or near the center of a substrate surface.

[0009] Means for solving technical problems

[0010] One aspect of the substrate processing method of the present invention includes the following (A) to (D): (A) supplying a processing liquid to the center position of a rotating substrate surface. (B) moving the supply position of the processing liquid from the center position to a first eccentric position. (C) stopping the supply position of the processing liquid at the first eccentric position and supplying a replacement liquid for replacing the processing liquid to a second eccentric position different from the first eccentric position. (D) moving the supply position of the processing liquid from the first eccentric position in a direction opposite to the center position, and moving the supply position of the replacement liquid from the second eccentric position towards the center position.

[0011] Invention Effects

[0012] One method of the present invention can suppress the generation of particles at or near the center of the substrate surface. Attached Figure Description

[0013] Figure 1 (A) represents Figure 4A diagram of an example of S101, Figure 1 (B) means Figure 4 A diagram of an example of S103, Figure 1 (C) represents Figure 4 A diagram of an example of S104, Figure 1 (D) indicates that it is followed by Figure 1 The diagram is a reference example of step (C).

[0014] Figure 2 This is a diagram illustrating a substrate processing apparatus according to one embodiment.

[0015] Figure 3 This is a diagram illustrating an example of the first and second moving mechanisms.

[0016] Figure 4 This is a flowchart illustrating a substrate processing method in one implementation.

[0017] Figure 5 (A) represents Figure 4 A diagram of an example of S105. Figure 5 (B) means Figure 4 A diagram of an example of S106, Figure 5 (C) represents Figure 4 A diagram of an example of S107, Figure 5 (D) represents Figure 4 A diagram of an example of S108, Figure 5 (E) represents Figure 4 A diagram of an example of S109.

[0018] Figure 6 This is a table representing a substrate processing method for one implementation.

[0019] Figure 7 (A) represents the use of Figure 5 A diagram showing the particle distribution on the surface of a substrate after processing using the substrate processing method. Figure 7 (B) indicates the use of Figure 1 The distribution of particles on the surface of the substrate after the substrate processing method is shown in the figure.

[0020] Figure 8 This is a table representing the substrate processing method for the first modified example.

[0021] Figure 9 This is a table representing the substrate processing method for the second variation.

[0022] Figure 10 This is a diagram illustrating an example of an inspection apparatus for a substrate processing device. Detailed Implementation

[0023] Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings. Furthermore, in the drawings, the same or corresponding constituent elements are sometimes labeled with the same reference numerals, and descriptions are omitted.

[0024] The substrate treatment method includes, for example, the steps of: forming a liquid film of a drug solution on the substrate surface; replacing the liquid film of the drug solution with a liquid film of a rinsing solution; replacing the liquid film of the rinsing solution with a liquid film of a drying solution; and exposing the substrate surface from the liquid film of the drying solution. These processes are performed within the same processing container.

[0025] A chemical solution is supplied to the center of a rotating substrate surface, and centrifugal force causes the solution to spread radially across the entire substrate surface, forming a liquid film. Examples of the chemical solution used are BHF (buffered hydrofluoric acid). The chemical solution is not limited to BHF; for example, DHF (diluted hydrofluoric acid) can also be used. When using BHF, the substrate surface becomes water-repellent compared to when using DHF. Multiple chemical solutions can also be supplied sequentially; in this case, a rinsing solution film is formed between the formation of the first and second chemical solution film.

[0026] A rinsing solution is supplied to the center of the rotating substrate surface. Centrifugal force causes the rinsing solution to spread radially across the entire substrate surface, displacing the chemical solution contained in the liquid film. The rinsing solution is used to rinse away any remaining chemical solution on the substrate surface. For example, pure water such as DIW (deionized water) can be used as the rinsing solution.

[0027] A drying solution is supplied to the center of the rotating substrate surface. Centrifugal force causes the drying solution to spread radially across the entire substrate surface, replacing the rinsing solution contained in the liquid film. A liquid with a lower surface tension than the rinsing solution can be used as the drying solution. This suppresses the collapse of the raised pattern caused by surface tension. Examples of drying solutions include IPA (isopropanol).

[0028] After a liquid film of drying solution is formed, the substrate surface is exposed from the film. By rotating the substrate, the drying solution can be flung off its surface. At this point, the supply position of the drying solution can be moved from the center of the substrate surface towards the periphery. This movement creates an opening at the center of the liquid film, which gradually expands outwards from the center. To press down the edges of the opening, a drying gas such as nitrogen can be supplied. The supply position of the drying gas follows the supply position of the drying solution.

[0029] However, in order to replace the liquid film, the nozzle located directly above the center of the substrate surface must be replaced. For example, in order to replace the liquid film of the rinsing fluid with the liquid film of the drying fluid, the nozzle located directly above the center of the substrate surface must be changed from the nozzle for the rinsing fluid to the nozzle for the drying fluid.

[0030] The inventors investigated the cause of particles forming at or near the center of the substrate surface and found that the liquid film was interrupted when the nozzle located directly above the center of the substrate surface was replaced. It can be assumed that due to the interruption of the liquid film, residue from the liquid film adheres to the substrate surface.

[0031] Next, refer to Figure 1 The phenomenon that the liquid film is interrupted at or near the center of the substrate surface during displacement is explained. First, as... Figure 1 As shown in (A), the first nozzle 20 supplies rinsing fluid L1 to the center position P0 of the substrate surface Wa, forming a liquid film F1 of rinsing fluid L1 on the entire substrate surface Wa.

[0032] Next, as Figure 1 As shown in (B), the first nozzle 20 is moved radially outward from the substrate W, causing the supply position of the rinsing fluid L1 to move from the central position P0 to the first eccentric position P1. This is preparation for supplying the drying fluid L2 to a second eccentric position P2, which is different from the first eccentric position P1, and is preparation for preventing interference between the second nozzle 30 and the first nozzle 20.

[0033] The second eccentric position P2 and the first eccentric position P1 are positioned at approximately the same distance from the center position P0, but they can also be positioned at different distances from the center position P0. In order to ensure that the liquid film is not interrupted at or near the center position P0, the second eccentric position P2 and the first eccentric position P1 are positioned near the center position P0.

[0034] Next, as Figure 1 As shown in (C), with the supply of rinsing fluid L1 stopped at the first eccentric position P1, the second nozzle 30 supplies drying fluid L2 to the second eccentric position P2. The flow rate of rinsing fluid L1 at this time is a first flow rate Q1. The first flow rate Q1 is set such that the liquid film remains uninterrupted at or near the center position P0.

[0035] Next, as Figure 1 As shown in (D), the supply position of the rinsing fluid L1 begins to move from the first eccentric position P1 towards the peripheral position PE. The peripheral position PE is a position located radially outward relative to the first eccentric position P1, in the opposite direction to the central position P0. Additionally, the supply position of the drying fluid L2 begins to move from the second eccentric position P2 towards the central position P0.

[0036] According to the reference example, such as Figure 1 As shown in (D), when the supply position of the flushing fluid L1 begins to move radially outward from the first eccentric position P1, the flow rate of the flushing fluid L1 is reduced from the first flow rate Q1 to the second flow rate Q2. This is to prevent liquid splashing at the supply position of the flushing fluid L1.

[0037] The further the flushing fluid L1 is from the center position P0, the greater the circumferential velocity and centrifugal force at that position, and the easier it is for liquid splashing to occur. If the flow rate of flushing fluid L1 is reduced from the first flow rate Q1 to the second flow rate Q2 beforehand, liquid splashing at the flushing fluid L1 supply position can be prevented.

[0038] The first flow rate Q1 is, for example, 1200 mL / min to 1800 mL / min. The second flow rate Q2 is, for example, 800 mL / min to 1200 mL / min. Furthermore, the flow rate of the rinsing solution L1 is reduced from the first flow rate Q1 to the second flow rate Q2, while the flow rate of the drying solution L2 is maintained at a third flow rate Q3. The third flow rate Q3 is, for example, 50 mL / min to 100 mL / min.

[0039] However, as described above, when the supply position of the flushing fluid L1 begins to move radially outward from the first eccentric position P1, and the flow rate of the flushing fluid L1 is reduced from the first flow rate Q1 to the second flow rate Q2, as... Figure 1 As shown in (D), the liquid film sometimes breaks at or near the center position P0. This phenomenon occurs when the substrate surface Wa is hydrophobic. This is because the rinsing liquid L1 is easily peeled off from the substrate surface Wa and is easily washed radially outward by centrifugal force. Examples of substrate surface Wa being hydrophobic include treatment with BHF, treatment with high-concentration HF, and coating with a hydrophobic resist film. Furthermore, this phenomenon does not occur when the substrate surface Wa is hydrophilic.

[0040] In this embodiment, to address the issue of the substrate surface Wa being water-repellent, the timing T for reducing the flow rate of the rinsing fluid L1 from a first flow rate Q1 to a second flow rate Q2 is delayed. Timing T occurs after the supply position of the rinsing fluid L1 begins to move radially outward from the first eccentric position P1. Because timing T is delayed, the rinsing fluid L1 can also be supplied to the central position P0, preventing the liquid film from being interrupted at or near the central position P0. Therefore, it is possible to suppress the adhesion of liquid film residue to the substrate surface due to liquid film interruption, and to suppress the generation of particles at or near the central position P0.

[0041] However, after the supply position of the rinsing fluid L1 begins to move radially outward from the first eccentric position P1, during the period until the supply position of the drying fluid L2 reaches the center position P0, such as Figure 5 As shown in (B), the drying liquid L2 can also reach the center position P0. Therefore, during the period until the supply position of the drying liquid L2 reaches the center position P0, the flow rate of the rinsing liquid L1 is reduced from the first flow rate Q1 to the second flow rate Q2.

[0042] That is, the timing T for reducing the flow rate of the rinsing fluid L1 from the first flow rate Q1 to the second flow rate Q2 is during the period until the supply position of the drying fluid L2 reaches the center position P0. Because the flow rate of the rinsing fluid L1 is reduced from the first flow rate Q1 to the second flow rate Q2 before the supply position of the rinsing fluid L1 is too far from the center position P0, liquid splashing at the supply position of the rinsing fluid L1 can be suppressed.

[0043] Furthermore, the timing T can be any period from when the supply position of the drying liquid L2 reaches the center position P0, either before or at the time of arrival. However, if the timing T is before the supply position of the drying liquid L2 reaches the center position P0, it can further suppress liquid splashing at the supply position of the rinsing liquid L1.

[0044] The displacement from the liquid film F1 of the rinsing fluid L1 to the liquid film F2 of the drying fluid L2 will now be described. The rinsing fluid L1 corresponds to the processing fluid described in the claims, and the drying fluid L2 corresponds to the displacement fluid described in the claims.

[0045] Furthermore, the technology of the present invention can also be applied to the replacement of a liquid film of a pharmaceutical solution with a liquid film F1 of a rinsing solution L1. In this case, the pharmaceutical solution corresponds to the treatment solution described in the claims, and the rinsing solution L1 corresponds to the replacement solution described in the claims.

[0046] Next, refer to Figure 2 The substrate processing apparatus 1 of this embodiment will be described. Figure 2 In this design, the X-axis, Y-axis, and Z-axis are perpendicular to each other. The X-axis and Y-axis are horizontal, and the Z-axis is vertical. The substrate processing apparatus 1 is capable of processing the substrate surface Wa. The substrate W includes, for example, a silicon wafer or a compound semiconductor wafer. Alternatively, the substrate W can also be a glass substrate.

[0047] The substrate processing device 1 includes a chuck 10, a rotation mechanism 11, a first nozzle 20, a first flow controller 21, a first moving mechanism 22, a second nozzle 30, a second flow controller 31, a second moving mechanism 32, a cup-shaped body 40, and a control device 90.

[0048] The chuck 10 holds the substrate W. The chuck 10 holds the substrate W horizontally from below with the substrate surface Wa facing upwards. The chuck 10... Figure 2The chuck can be a mechanical chuck, but it can also be a vacuum chuck or an electrostatic chuck, etc.

[0049] The rotating mechanism 11 enables the chuck 10 to rotate. The rotation axis of the chuck 10 is vertically configured. The chuck 10 is able to hold the substrate W in such a way that the center of the substrate surface Wa is aligned with the rotation center line of the chuck 10.

[0050] The first nozzle 20 is capable of supplying rinsing fluid L1 to the rotating substrate surface Wa. The first nozzle 20 is positioned above the chuck 10 and can supply rinsing fluid L1 to the substrate surface Wa from above. The first nozzle 20 can supply rinsing fluid L1 to the substrate surface Wa vertically.

[0051] A first flow controller 21 and a first on / off valve 23 are installed midway in the first supply line for supplying flushing fluid L1 to the first nozzle 20. When the first on / off valve 23 opens the flow path of flushing fluid L1, the first nozzle 20 releases flushing fluid L1. Its flow rate is controlled by the first flow controller 21. On the other hand, when the first on / off valve 23 closes the flow path of flushing fluid L1, the first nozzle 20 stops releasing flushing fluid L1.

[0052] The first moving mechanism 22 is capable of moving the first nozzle 20, thereby moving the supply position of the rinsing fluid L1 radially along the substrate surface Wa. The first moving mechanism 22 includes, for example, a rotating arm 22a for holding the first nozzle 20, and a rotating mechanism 22b for rotating the rotating arm 22a. The rotating mechanism 22b may also function as a mechanism for raising and lowering the rotating arm 22a. The rotating arm 22a is horizontally configured to hold the first nozzle 20 at one end in its length direction and rotate about a rotation axis extending downward from the other end in its length direction (see reference). Figure 3 Alternatively, the first moving mechanism 22 may have a guide rail and a linear motion mechanism instead of the rotating arm 22a and the rotating mechanism 22b. The guide rail is horizontally configured, and the linear motion mechanism enables the first nozzle 20 to move along the guide rail.

[0053] The second nozzle 30 is capable of supplying drying liquid L2 to the rotating substrate surface Wa. The second nozzle 30 is positioned above the chuck 10 and can supply drying liquid L2 to the substrate surface Wa from above. The second nozzle 30 can supply drying liquid L2 to the substrate surface Wa vertically.

[0054] A second flow controller 31 and a second on / off valve 33 are provided midway through the second supply line for supplying the drying liquid L2 to the second nozzle 30. When the second on / off valve 33 opens the flow path of the drying liquid L2, the second nozzle 30 releases the drying liquid L2. Its flow rate is controlled by the second flow controller 31. On the other hand, when the second on / off valve 33 closes the flow path of the drying liquid L2, the second nozzle 30 stops releasing the drying liquid L2.

[0055] The second moving mechanism 32 is capable of moving the second nozzle 30, thereby moving the supply position of the drying liquid L2 radially along the substrate surface Wa. The second moving mechanism 32 includes, for example, a rotating arm 32a for holding the second nozzle 30, and a rotating mechanism 32b for rotating the rotating arm 32a. The rotating mechanism 32b may also function as a mechanism for raising and lowering the rotating arm 32a. The rotating arm 32a is horizontally configured to hold the second nozzle 30 at one end in its length direction and rotate about a rotating axis extending downward from the other end in its length direction (see reference). Figure 3 Alternatively, the second moving mechanism 32 can have a guide rail and a linear motion mechanism instead of the rotating arm 32a and the rotating mechanism 32b. The guide rail is horizontally configured, and the linear motion mechanism enables the second nozzle 30 to move along the guide rail.

[0056] The cup-shaped body 40 is capable of receiving the substrate W and recovering the rinsing fluid L1 and drying fluid L2 splashed off from the substrate surface Wa. The cup-shaped body 40 includes a cylindrical portion 41, a bottom cover portion 42, and an inclined portion 43. The cylindrical portion 41 has an inner diameter larger than the diameter of the substrate W and is vertically disposed. The bottom cover portion 42 closes the opening at the lower end of the cylindrical portion 41. The inclined portion 43 is formed over the entire circumference of the upper end of the cylindrical portion 41 and slopes upwards towards the radially inward side of the cylindrical portion 41.

[0057] The control device 90 is capable of controlling the rotating mechanism 11, the first flow controller 21, the first moving mechanism 22, the second flow controller 31, and the second moving mechanism 32, etc. The control device 90 is, for example, a computer. Figure 2 As shown, the device includes a CPU (Central Processing Unit) 91 and a storage medium 92, such as a memory. The storage medium 92 stores programs for controlling various processes executed in the substrate processing apparatus 1. The control device 90 controls the operation of the substrate processing apparatus 1 by causing the CPU 91 to execute the programs stored in the storage medium 92.

[0058] Next, refer to Figure 4 , Figure 5 and Figure 6 The substrate processing method of this embodiment will be described. Figure 4 Each process shown is carried out under the control of the control device 90.

[0059] First of all, Figure 4 In S101, such as Figure 1 As shown in (A), the first nozzle 20 supplies rinsing fluid L1 to the center position of the rotating substrate surface Wa, forming a liquid film F1 of rinsing fluid L1 on the entire substrate surface Wa.

[0060] Next, in S102, the first moving mechanism 22 initiates the movement of the first nozzle 20. The supply position of the flushing fluid L1 begins to move from the center position P0 to the first eccentric position P1.

[0061] Next, in S103, as Figure 1 As shown in (B), the first moving mechanism 22 stops the movement of the first nozzle 20 and stops the supply position of the flushing fluid L1 at the first eccentric position P1.

[0062] Next, in S104, as Figure 1 As shown in (C), when the first moving mechanism 22 stops the supply of rinsing fluid L1 at the first eccentric position P1, the second nozzle 30 supplies drying fluid L2 to the second eccentric position P2. At this time, the flow rate of rinsing fluid L1 is the first flow rate Q1.

[0063] Next, in S105, as Figure 5 As shown in (A), the first moving mechanism 22 initiates the movement of the first nozzle 20. The supply position of the rinsing fluid L1 begins to move radially outward from the first eccentric position P1. Additionally, the second moving mechanism 32 initiates the movement of the second nozzle 30. The supply position of the drying fluid L2 begins to move from the second eccentric position P2 towards the center position P0.

[0064] Next, in S106, as Figure 5 As shown in (B), the first flow controller 21 reduces the flow rate of the flushing fluid L1 from the first flow rate Q1 to the second flow rate Q2. The timing T is after the supply position of the flushing fluid L1 has started to move radially outward from the first eccentric position P1. Therefore, either the flushing fluid L1 or the drying fluid L2 can also be supplied to the central position P0, and the interruption of the liquid film at or near the central position P0 can be suppressed.

[0065] Next, in S107, as Figure 5 As shown in (C), when the supply position of the drying liquid L2 reaches the center position P0, the second moving mechanism 32 stops the movement of the second nozzle 30. The second nozzle 30 supplies the drying liquid L2 to the center position P0. The drying liquid L2 begins to spread from the center position P0 to the peripheral position PE.

[0066] After the supply position of the drying liquid L2 reaches the center position P0, it can be as follows: Figure 6 As shown, the rotating mechanism 11 reduces the rotational speed of the substrate W from a first rotational speed R1 to a second rotational speed R2. This is preparation for covering the entire substrate surface Wa with a liquid film F2 of the drying liquid L2.

[0067] The drying solution L2 has higher volatility than the rinsing solution L1. Therefore, by reducing the rotational speed of the substrate W, the thickness of the liquid film F2 of the drying solution L2 can be increased, suppressing the evaporation of the drying solution L2 and preventing the exposure of the substrate surface Wa. The further radially outward the substrate surface Wa is, the greater the centrifugal force acting on the liquid film F2, and the thinner the liquid film F2 becomes. Therefore, before the drying solution L2 diffuses to the peripheral position PE, the rotation mechanism 11 reduces the rotational speed of the substrate W from a first rotational speed R1 to a second rotational speed R2. The first rotational speed R1 is, for example, 1000 rpm to 1400 rpm. The second rotational speed R2 is, for example, 500 rpm to 900 rpm.

[0068] According to this embodiment, with the supply position of the drying liquid L2 fixed at the center position P0, the supply position of the rinsing liquid L1 is moved towards the peripheral position PE. As the drying liquid L2 expands from the center position P0 towards the peripheral position PE, the rinsing liquid L1 can be supplied in front of the drying liquid L2, thus suppressing liquid film interruption. Therefore, the generation of particles at the peripheral position PE can be suppressed.

[0069] Next, in S108, as Figure 5 As shown in (D), when the supply position of the flushing fluid L1 reaches the peripheral position PE, the first moving mechanism 22 stops the movement of the first nozzle 20. The first nozzle 20 supplies flushing fluid L1 to the peripheral position PE.

[0070] Finally, in S109, as Figure 5 As shown in (E), the first nozzle 20 stops the supply of rinsing fluid L1. Thus, the displacement from the liquid film F1 of rinsing fluid L1 to the liquid film F2 of drying fluid L2 is completed.

[0071] Figure 7 (A) indicates the use of Figure 5 The distribution of Wa particles on the substrate surface after substrate processing methods. Additionally, Figure 7 (B) indicates the use of Figure 1 The distribution of Wa particles on the substrate surface after substrate processing methods. Figure 7 (A) and Figure 7 In (B), the black dots are particles.

[0072] Figure 7 (A) and Figure 7 The experimental conditions for (B) are as follows. The substrate W is a silicon wafer with a surface Wa diameter of 300 mm. The substrate surface Wa was pretreated with BHF to make it hydrophobic. The first rotational speed R1 was 1200 rpm, the second rotational speed R2 was 700 rpm, the first flow rate Q1 was 1500 mL / min, the second flow rate Q2 was 1000 mL / min, and the third flow rate Q3 was 75 mL / min.

[0073] Will Figure 7 (A) and Figure 7 As can be seen from (B), when the timing T of reducing the flow rate of the flushing fluid L1 from the first flow rate Q1 to the second flow rate Q2 is delayed, the generation of particles at or near the center position P0 can be suppressed.

[0074] Next, refer to Figure 8 The substrate processing method for the first modified example will be explained. The following mainly focuses on this modified example ( Figure 8 ) and the above implementation method ( Figure 6 Explain the differences between them.

[0075] In this variation, such as Figure 8 As shown, when the supply position of the flushing fluid L1 begins to move radially outward from the first eccentric position P1 ( Figure 4 S105, Figure 5 (A)) The second flow controller 31 increases the flow rate of the drying liquid L2 from the third flow rate Q3 to the fourth flow rate Q4. The fourth flow rate Q4 is, for example, 120 mL / min to 180 mL / min.

[0076] Because the flow rate of the drying fluid L2 increases as the supply position of the rinsing fluid L1 moves radially outward from the first eccentric position P1, the drying fluid L2 can also reach the central position P0. Therefore, it is possible to prevent the liquid film from being interrupted at or near the central position P0.

[0077] During the period until the supply position of the drying liquid L2 reaches the center position P0 (either before or upon arrival), the second flow controller 31 reduces the flow rate of the drying liquid L2 from the fourth flow rate Q4 to the fifth flow rate Q5. The fifth flow rate Q5 is, for example, 50 mL / min to 100 mL / min. The fifth flow rate Q5 only needs to be less than the fourth flow rate Q4, and can be the same as the third flow rate Q3.

[0078] In this modified example, when the supply position of the drying liquid L2 reaches the center position P0, the second flow controller 31 reduces the flow rate of the drying liquid L2 from the fourth flow rate Q4 to the fifth flow rate Q5. When the supply position of the drying liquid L2 reaches the center position P0, the drying liquid L2 can reliably reach the center position P0.

[0079] Furthermore, in this modified example, similar to the above embodiment, the timing T for reducing the flow rate of the flushing fluid L1 from the first flow rate Q1 to the second flow rate Q2 is after the supply position of the flushing fluid L1 begins to move radially outward from the first eccentric position P1, but it can also be at the beginning of the movement (see [reference]). Figure 1 If the flow rate of the drying liquid L2 is increased from the third flow rate Q3 to the fourth flow rate Q4 at this time, the interruption of the liquid film at or near the center position P0 can be suppressed.

[0080] Next, refer to Figure 9 The substrate processing method for the second modified example will be explained below. The following mainly focuses on this modified example ( Figure 9 ) and the above implementation method ( Figure 6 Explain the differences between them.

[0081] In this variation, such as Figure 9 As shown, when the supply position of the rinsing fluid L1 begins to move radially outward from the first eccentric position P1, the rotating mechanism 11 reduces the rotational speed of the substrate W from the first rotational speed R1 to the third rotational speed R3. The third rotational speed R3 is, for example, 800 rpm to 1200 rpm. The third rotational speed R3 only needs to be less than the first rotational speed R1.

[0082] Because the rotational speed of the substrate W decreases as the supply position of the rinsing fluid L1 moves radially outward from the first eccentric position P1, the centrifugal force decreases, and either the rinsing fluid L1 or the drying fluid L2 can reach the central position P0. Therefore, it is possible to prevent the liquid film from being interrupted at or near the central position P0.

[0083] During the period until the supply position of the drying liquid L2 reaches the center position P0 (either before or upon reaching the center position), the rotating mechanism 11 further reduces the rotational speed of the substrate W from a third rotational speed R3 to a second rotational speed R2. The third rotational speed R3 is less than the first rotational speed R1 and greater than the second rotational speed R2. The second rotational speed R2 is, for example, 500 rpm to 900 rpm.

[0084] In this modified example, when the supply position of the drying liquid L2 reaches the center position P0, the rotating mechanism 11 reduces the rotational speed of the substrate W from the third rotational speed R3 to the second rotational speed R2. When the supply position of the drying liquid L2 reaches the center position P0, the drying liquid L2 can reliably reach the center position P0.

[0085] Furthermore, in this variation, the third rotational speed R3 is greater than the second rotational speed R2, but it can also be the same as the second rotational speed R2. This reduces the time required to change the rotational speed.

[0086] Furthermore, in this modified example, similar to the above embodiment, the timing T for reducing the flow rate of the flushing fluid L1 from the first flow rate Q1 to the second flow rate Q2 is after the supply position of the flushing fluid L1 begins to move radially outward from the first eccentric position P1, but it can also be at the beginning of the movement (see [reference]). Figure 1 If the rotational speed of the substrate W is reduced from the first rotational speed R1 to the third rotational speed R3 at this time, the interruption of the liquid film at or near the center position P0 can be suppressed.

[0087] Suppressing the interruption of the liquid film at or near the center position P0 can be achieved by at least one of (1) to (3) below. There is no particular limitation on the combination, and all of (1) to (3) below can be combined. (1) After the supply position of the rinsing liquid L1 is moved radially outward from the first eccentric position P1, the flow rate of the rinsing liquid L1 is reduced from the first flow rate Q1 to the second flow rate Q2. (2) When the supply position of the rinsing liquid L1 is moved radially outward from the first eccentric position P1, the flow rate of the drying liquid L2 is increased from the third flow rate Q3 to the fourth flow rate Q4. (3) When the supply position of the rinsing liquid L1 is moved radially outward from the first eccentric position P1, the rotational speed of the substrate W is reduced from the first rotational speed R1 to the third rotational speed R3.

[0088] Next, refer to Figure 10 The inspection device 50 of the substrate processing apparatus 1 will be described. The inspection device 50 is capable of inspecting the wettability of the rinsing fluid L1 on the substrate surface Wa. For example, when a liquid film F1 of the rinsing fluid L1 has formed on the substrate surface Wa, the inspection device 50 uses a camera 51 or the like to capture an image of the rotating substrate surface Wa, processes the captured image, and determines the wettability based on whether the entire substrate surface Wa is covered by the liquid film F1. Furthermore, the camera 51 can be installed inside a processing container for housing the chuck 10, or it can be installed outside the processing container.

[0089] In such Figure 10 As shown, if the substrate surface Wa is not entirely covered by the liquid film F1, and only the periphery of the substrate surface Wa is exposed from the liquid film F1, the inspection device 50 determines that the rinsing liquid L1 has poor wettability on the substrate surface Wa, and the substrate surface Wa is hydrophobic. When the substrate surface Wa is hydrophobic, the rinsing liquid L1 is easily peeled off, and the periphery of the substrate surface Wa will be exposed. This is because the centrifugal force is greater at the periphery of the substrate surface Wa compared to the center. On the other hand, if the substrate surface Wa is entirely covered by the liquid film F1, the inspection device 50 determines that the rinsing liquid L1 has good wettability on the substrate surface Wa, and the substrate surface Wa is hydrophilic.

[0090] Based on the inspection results of the inspection device 50, the control device 90 determines the timing T for reducing the flow rate of the flushing fluid L1 from the first flow rate Q1 to the second flow rate Q2. Specifically, in the case of... Figure 10As shown, when the substrate surface Wa is not entirely covered by the liquid film F1, but the periphery of the substrate surface Wa is exposed from the liquid film F1, the timing T is set to the period from when the supply position of the rinsing liquid L1 begins to move radially outward from the first eccentric position P1 until the supply position of the drying liquid L2 reaches the center position P0 (before or at the time of arrival). On the other hand, when the substrate surface Wa is entirely covered by the liquid film F1, the timing T is set to the time when the supply position of the rinsing liquid L1 begins to move radially outward from the first eccentric position P1.

[0091] The embodiments of the substrate processing method and substrate processing apparatus of the present invention have been described above, but the present invention is not limited to the above embodiments. Various changes, modifications, substitutions, additions, deletions, and combinations can be made within the scope of the claims. These, of course, also fall within the technical scope of the present invention.

[0092] This application claims priority based on Japanese Patent Application No. 2020-037866, filed with the Japan Patent Office on March 5, 2020, and incorporates the entire contents of Japanese Patent Application No. 2020-037866 into this application.

[0093] Explanation of reference numerals in the attached figures

[0094] L1 is the rinsing solution (processing solution), L2 is the drying solution (replacement solution), Wa is the substrate surface, P0 is the center position, P1 is the first eccentric position, and P2 is the second eccentric position.

Claims

1. A method of processing a substrate, characterized by, comprising: a step of supplying a processing liquid to a center position of a surface of a substrate which is rotating; a step of moving the supply position of the processing liquid from the center position to a first eccentric position; a step of stopping the supply position of the processing liquid at the first eccentric position, and supplying a replacement liquid for replacing the processing liquid to a second eccentric position which is different from the first eccentric position; and a step of moving the supply position of the processing liquid from the first eccentric position to a position opposite to the center position, and moving the supply position of the replacement liquid from the second eccentric position to the center position. comprising:

2. The method for processing a substrate as set forth in claim 1, wherein a step of rotating the surface of the substrate at a first rotation speed while supplying the processing liquid to the first eccentric position, and reducing the rotation speed of the surface of the substrate to a speed lower than the first rotation speed when the movement of the supply position of the processing liquid from the first eccentric position to the position opposite to the center position is started. comprising:

3. The substrate processing method as set forth in claim 1 or 2, wherein a step of continuing the movement of the supply position of the processing liquid to the position opposite to the center position while the supply position of the replacement liquid is fixed at the center position. comprising:

4. The substrate processing method as set forth in claim 1 or 2, wherein a step of supplying the replacement liquid to the second eccentric position at a third flow rate, and increasing the flow rate of the replacement liquid from the third flow rate to a fourth flow rate when the movement of the supply position of the processing liquid from the first eccentric position to the position opposite to the center position is started. comprising:

5. A substrate processing apparatus characterized by comprising: a chuck for holding a substrate; a rotation mechanism for rotating the chuck; a first nozzle for supplying a processing liquid to a surface of the substrate which is rotating; a first movement mechanism for moving the first nozzle to move a supply position of the processing liquid in a radial direction of the surface of the substrate; a second nozzle for supplying a replacement liquid to the surface of the substrate which is rotating; a second movement mechanism for moving the second nozzle to move a supply position of the replacement liquid in the radial direction of the surface of the substrate; and a control device capable of controlling the rotation mechanism, the first movement mechanism and the second movement mechanism to implement the substrate processing method according to any one of claims 1 to 3. comprising: a chuck for holding a substrate; 6. A substrate processing apparatus characterized by comprising: a rotation mechanism for rotating the chuck; a first nozzle for supplying a processing liquid to a surface of the substrate which is rotating; a first flow rate controller for controlling a flow rate of the processing liquid supplied by the first nozzle; a first movement mechanism for moving the first nozzle to move a supply position of the processing liquid in a radial direction of the surface of the substrate; a second nozzle for supplying a replacement liquid to the surface of the substrate which is rotating; a second flow rate controller for controlling a flow rate of the replacement liquid supplied by the second nozzle; a second movement mechanism for moving the second nozzle to move a supply position of the replacement liquid in the radial direction of the surface of the substrate; and a control device capable of controlling the rotation mechanism, the first movement mechanism, the first flow rate controller, the second movement mechanism and the second flow rate controller to implement the substrate processing method according to claim 4.

7. The substrate processing device according to claim 5 or 6, characterized by: ​ ​ ​ Also included is an inspection device for inspecting wettability of the processing liquid to the surface of the substrate. Also included is an inspection device for inspecting wettability of the processing liquid to the surface of the

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