Missile-borne equipment heat dissipation device based on solid material energy storage and design method thereof

Abstract

The application discloses a missile-borne equipment heat dissipation device based on solid material energy storage and a design method thereof. The heat dissipation device comprises a cold plate, electronic components and non-heat source components arranged in an outer frame. The cold plate is arranged below, and the non-heat source components are fixed on the outer frame above the cold plate. The cold plate is a groove-shaped structure with an open top, and a plurality of ribs are arranged on the inner side of the groove-shaped structure. The electronic components are fixed by the ribs. The cold plate is made of solid energy storage material, and the cold plate absorbs heat from the electronic components. The design method comprises selecting solid energy storage material used by the cold plate according to the heat source intensity, operation time, operation temperature of the electronic components, mass limit of the heat dissipation device and heat exchange area of the cold plate. The heat dissipation device can be made of more suitable solid energy storage material, the efficiency of the heat dissipation device is effectively improved, and the operation time of the electronic components in the missile-borne equipment is prolonged.

Description

Technical Field

[0001] This invention relates to the field of solid phase change energy storage, specifically to a heat dissipation device for missile-borne equipment based on solid material energy storage and its design method. Background Technology

[0002] Electronic components in missile-borne equipment consume significant power, and the heat generated causes the internal temperature to rise rapidly, exceeding the allowable temperature range. Improving the heat dissipation efficiency of missile-borne equipment can extend the operating time of electronic components. Due to the limitations of limited space and high stability requirements of missile-borne equipment, traditional air cooling and liquid cooling methods are difficult to apply. Currently, passive cooling methods using solid thermal energy storage are more commonly used to improve the heat dissipation capacity of missile-borne equipment.

[0003] Current missile-borne thermal storage commonly uses aluminum alloys or metal composites (such as aluminum-paraffin composites). Composite materials often utilize non-metallic phase change materials like paraffin, which have high latent heat, to increase the device's thermal storage capacity. However, non-metallic phase change materials have low thermal conductivity, requiring long heat transfer times and large transfer areas to utilize their full thermal storage capacity. In missile-borne equipment, electronic components heat up rapidly, necessitating heat dissipation devices to remove heat as quickly as possible. Therefore, shape memory alloys, with better thermal conductivity and latent heat of phase change, have the potential for application in short-duration missile-borne thermal storage. Summary of the Invention

[0004] The purpose of this invention is to address the problems in the prior art by providing a heat dissipation device for missile-borne equipment based on solid material energy storage and its design method, thereby extending the operating time of electronic components in missile-borne equipment.

[0005] To achieve the above objectives, the present invention provides the following technical solution:

[0006] A heat dissipation device for missile-borne equipment based on solid material energy storage includes a cold plate, electronic components, and a non-heat source assembly disposed inside an outer frame. The cold plate is arranged below, and the non-heat source assembly is fixed on the outer frame above the cold plate. The cold plate is a groove-shaped structure with an open top, and multiple ribs are machined on the inner side of the groove-shaped structure. The electronic components are mounted and fixed by the ribs. The cold plate is made of solid energy storage material and absorbs heat from the electronic components.

[0007] Preferably, the solid energy storage material is a shape memory alloy, and a self-locking structure is clamped on the outside of the cold plate. An actuator is arranged inside the self-locking structure, which can provide an inward driving force to the cold plate. When heat dissipation is required, the self-locking structure drives the cold plate to deform inward, and the cold plate is in close contact with the electronic components. The cold plate deforms under the action of the driving force, and the shape memory alloy material undergoes a phase transformation from martensite to austenite. The phase transformation process generates an elasto-thermal effect, absorbing heat from the electronic components.

[0008] Preferably, the cold plate uses its own heat capacity and latent heat of phase change to reduce the operating temperature of the electronic components. When the temperature of the electronic components is lower than the phase change temperature of the cold plate, the cold plate conducts heat out of the electronic components. When the temperature of the electronic components is higher than the phase change temperature of the cold plate, the cold plate is driven to deform through a self-locking structure to generate an elastic-thermal effect and reduce the temperature of the electronic components.

[0009] Preferably, the martensitic-austenitic phase transformation of the cold plate is controlled by a self-locking structure, and the specific control logic is as follows:

[0010] If the temperature of the electronic component is lower than the initial value T0: the self-locking mechanism will not operate;

[0011] The temperature of the electronic component is higher than the initial value T0, but lower than (Tt–5K), where Tt is the phase transformation temperature of the shape memory alloy. The electronic component needs to be kept at a low temperature: control the operation of the self-locking structure to make the inner wall of the cold plate in close contact with the outer wall of the electronic component, and make the cold plate deform by 3%-5%, resulting in an elastothermal effect to quickly cool down the electronic component.

[0012] The temperature of the electronic component is higher than the initial value T0, but lower than (Tt–5K), where Tt is the phase transition temperature of the shape memory alloy. The electronic component does not need to be kept at a low temperature; only the upper limit temperature Tm is set. The self-locking structure is controlled to ensure that the inner wall of the cold plate is in close contact with the outer wall of the electronic component. The cold plate does not produce additional deformation and dissipates heat from the electronic component solely through the heat capacity of the cold plate. When the temperature reaches Tt+0.5*(Tm-Tt), the self-locking structure starts to operate, causing the cold plate to deform by 3%-5%, resulting in an elasto-thermal effect.

[0013] When the temperature of the electronic component is higher than (Tt+15K), where Tt is the phase transformation temperature of the shape memory alloy: the control logic of the self-locking structure applies a driving force to the cold plate, so that the cold plate is in close contact with the electronic component and no additional deformation occurs. This case has the highest control priority.

[0014] Preferably, for electronic components with uneven temperature distribution or large size, the solid energy storage material is a composite material formed by combining shape memory alloy with other materials. The part of the cold plate near the middle uses a material with high thermal conductivity and low heat storage capacity, while the two sides use a material with low thermal conductivity and high heat storage capacity. If the cold plate only uses shape memory alloy in the middle, a self-locking structure is connected to the bottom or outer side of the cold plate to provide an inward driving force to the cold plate. This allows the self-locking structure to drive only the shape memory alloy. If the cold plate only uses shape memory alloy on the two sides, additional reinforcing ribs are arranged in the middle of the cold plate.

[0015] Preferably, the solid energy storage material is a metal alloy or a metal-nonmetal composite material, and the cold plate is tightly bonded to the electronic components through mechanical fit. The solid energy storage material completes heat conduction and heat absorption by contacting the surface of the electronic components.

[0016] Preferably, the metal alloy material includes aluminum alloy and copper alloy, and the metal-nonmetal composite material includes aluminum-paraffin composite material.

[0017] Preferably, the electronic component has a housing made of a metal material with high thermal conductivity.

[0018] A design method for a heat dissipation device for missile-borne equipment based on solid material energy storage includes the following steps:

[0019] The solid energy storage material used in the cold plate is selected based on the heat source intensity, operating time, operating temperature of the electronic components, the mass limitations of the heat dissipation device, and the heat exchange area of ​​the cold plate.

[0020] Preferably, the design method specifically includes:

[0021] S1. Select solid energy storage materials that meet the mass and space requirements of the heat dissipation device, and calculate the heat storage capacity of each solid energy storage material within the operating temperature range of the electronic components. The heat storage capacity is the latent heat of phase change plus the sensible heat of the solid energy storage material.

[0022] S2. Assuming the cold plate is a semi-infinite flat plate, calculate the time t1 required for the temperature change on the inner wall of the cold plate to be transmitted to the outermost side.

[0023] S3. Calculate the rate of change of thermal conductivity with time t1. The thermal conductivity corresponding to the rate of change is 0.5% to 5%, which is a selectable range. Among the solid energy storage materials selected in step S1, select the solid energy storage material with the largest heat storage capacity within the selectable range of thermal conductivity as the material for making the cold plate. If there is no solid energy storage material with thermal conductivity within the selectable range, select the solid energy storage material with the largest thermal conductivity as the material for making the cold plate.

[0024] Compared to existing technologies, the heat dissipation device for missile-borne equipment based on solid-state energy storage of the present invention has at least the following beneficial effects: Utilizing the internal space of the outer frame, a cold plate is arranged below, and non-heat-generating components of the missile-borne equipment are fixed above the cold plate. These non-heat-generating components include back-end electronic equipment and its supporting structure. These structural components generate little or no heat compared to the heat generated by electronic components, and do not come into contact with any form of cold plate or electronic components, being separated from the cold plate and electronic components by heat-insulating materials. The heat dissipation device of the present invention can be manufactured by more accurately selecting suitable solid-state energy storage materials, effectively improving the efficiency of the heat dissipation device. The present invention mounts and fixes the electronic components in the missile-borne equipment using ribs, allowing for close contact between the electronic components and the cold plate, facilitating contact and heat absorption from the electronic components.

[0025] Furthermore, for existing missile-borne equipment, using shape memory alloys as heat storage materials offers advantages such as good thermal conductivity and high latent heat of phase change, making them more suitable for short-term, one-time passive cooling technologies for missile-borne equipment. Compared to traditional aluminum alloy and composite material heat dissipation structures, shape memory alloys have higher energy storage density and more efficient heat dissipation capabilities. Shape memory alloy heat dissipation structures can extend the operating time of electronic components in missile-borne equipment by 2-3 times.

[0026] Compared with the prior art, the design method of the heat dissipation device for missile-borne equipment based on solid material energy storage of the present invention has at least the following beneficial effects: For missile-borne equipment with different power and structure that may exist in the future, the method of the present invention selects the solid energy storage material used for the cold plate according to the heat source intensity of electronic components, operating time, operating temperature, mass limitation of heat dissipation device and heat exchange area of ​​cold plate. The proposed solid energy storage material selection steps can also ensure the performance of the device. Attached Figure Description

[0027] To more clearly illustrate the technical solutions of the embodiments of the present invention, the accompanying drawings used in the embodiments will be briefly introduced below. It should be understood that the following drawings only show some embodiments of the present invention. For those skilled in the art, other related drawings can be obtained from these drawings without creative effort.

[0028] Figure 1 A schematic diagram of the heat dissipation device structure of the missile-borne equipment based on solid material energy storage according to the present invention;

[0029] Figure 2-1 The device of this invention uses different cold plate materials to illustrate the operating temperature-time diagram of electronic components with a large heat exchange area;

[0030] Figure 2-2The device of this invention uses temperature-time diagrams of electronic components operating with small heat exchange areas using different cold plate materials;

[0031] In the attached diagram: 101 - outer frame; 102 - cold plate; 103 - electronic components; 104 - self-locking structure; 105 - non-heat source components. Detailed Implementation

[0032] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, those skilled in the art can obtain other embodiments without creative effort.

[0033] like Figure 1 As shown in the figure, an embodiment of the present invention proposes a heat dissipation device for missile-borne equipment based on solid material energy storage, comprising an outer frame 101, a cold plate 102, electronic components 103, a self-locking structure 104, and a non-heat source component 105. The outer frame 101 supports the entire device. The cold plate 102, self-locking structure 104, and non-heat source component 105 are all fixed to the outer frame 101 via threaded connections or other mechanical connections. Multiple ribs are arranged on the inner bottom surface of the cold plate 102, and the electronic components 103 are mounted and fixed via these ribs, increasing the contact area with the electronic components 103. An additional self-locking structure 104 is arranged on the outer side of the cold plate 102, and a motor or other driving device is installed within the self-locking structure 104 to apply an inward driving force to the sidewall of the cold plate 102. The electronic components 103 include the main heat dissipation components in the missile-borne equipment and are made of a metal material with a high thermal conductivity. The non-heat source component 105 contains components that do not generate heat or generate only a small amount of heat and is separated from the cold plate and electronic components by a heat-insulating material.

[0034] In one possible implementation, the material of the cold plate 102 in the heat dissipation device of the present invention is a nickel-titanium alloy (a shape memory alloy). The bottom of the electronic component 103 is in mechanical contact with the ribs of the cold plate 102. However, a certain gap is reserved between the self-locking structure 104 and the cold plate 102. When heat dissipation is required, the self-locking structure 104 drives the cold plate 102 to deform inward, thereby pressing it tightly against the electronic component 103. During the deformation process caused by the driving force, the cold plate 102 undergoes a phase transformation from martensite to austenite and absorbs heat, thereby slowing down the heating rate of the electronic component. The cold plate 102 uses its own heat capacity and latent heat of phase transformation to reduce the operating temperature of the electronic component 103. When the temperature of the electronic component 103 is lower than the phase transformation temperature of the cold plate 102, the cold plate 102 conducts heat out of the electronic component 103 through thermal conduction. When the temperature of the electronic component 103 is higher than the phase transformation temperature of the cold plate 102, the self-locking structure 104 drives the cold plate 102 to deform, generating an elasto-thermal effect and reducing the temperature of the electronic component 103.

[0035] In one possible implementation, the maximum allowable temperature of electronic component 103 is 110°C, with an initial value of 60°C, and the phase transformation temperature of the shape memory alloy is 75°C. When electronic component 103 begins to operate and heat up, the self-locking structure 104 drives the cold plate 102 to deform, generating an elasto-thermal effect. As the temperature of the electronic component increases, the deformation of the cold plate 102 continuously increases, but does not exceed 5%. When the temperature of the electronic component reaches 90°C, the self-locking structure 104 no longer drives the cold plate 102 and simply remains stationary.

[0036] The martensitic-austenitic phase transformation of the cold plate 102 is controlled by the self-locking structure 104, and the specific control logic is as follows:

[0037] a. If the temperature of electronic component 103 is lower than the initial value T0: the self-locking structure 104 will not operate;

[0038] b. The temperature of electronic component 103 is higher than the initial value T0, but lower than Tt–5K, where Tt is the phase transformation temperature of shape memory alloy. Electronic component 103 needs to be kept at a low temperature: the self-locking structure 104 operates, making the inner wall of the cold plate 102 in close contact with the outer wall of the electronic component 103, and causing the cold plate 102 to deform by 3%-5%, resulting in an elasto-thermal effect, which rapidly cools down the electronic component 103.

[0039] c. The temperature of electronic component 103 is higher than the initial value T0, but lower than Tt–5K, where Tt is the phase transition temperature of the shape memory alloy. Electronic component 103 does not need to be kept at a low temperature; only the upper limit temperature Tm is set. The self-locking structure 104 is controlled to operate, so that the inner wall of the cold plate 102 is in close contact with the outer wall of the electronic component 103. The cold plate 102 does not produce additional deformation and only relies on the heat capacity of the cold plate 102 to conduct heat away from the electronic component 103. When the temperature reaches Tt+0.5*(Tm-Tt), the self-locking structure 104 starts to operate, causing the cold plate 102 to produce a 3%-5% deformation, resulting in an elasto-thermal effect.

[0040] d. The temperature of electronic component 103 is higher than (Tt+15K), where Tt is the phase transformation temperature of the shape memory alloy: the control self-locking structure 104 applies a driving force to the cold plate 102, so that the cold plate 102 is in close contact with the electronic component 103 without generating additional deformation. The control logic in this case has the highest priority.

[0041] In one possible implementation, for electronic components 103 with uneven temperature distribution or large size, the solid energy storage material is a composite material formed by combining shape memory alloy with other materials. The part of the cold plate 102 near the middle uses a material with high thermal conductivity and low heat storage capacity, while the two sides use a material with low thermal conductivity and high heat storage capacity. If the cold plate 102 only uses shape memory alloy in the middle, it is connected to a self-locking structure 104 at the bottom or outer side of the cold plate 102, and the self-locking structure 104 provides an inward driving force to the cold plate 102, so that the self-locking structure 104 only needs to drive the shape memory alloy. If the cold plate 102 only uses shape memory alloy on the two sides, additional reinforcing ribs are arranged in the middle of the cold plate 102.

[0042] In another embodiment, the cold plate 102 can also be made of an alloy (aluminum alloy or copper alloy) or a metal-nonmetal composite material (aluminum-paraffin composite material). When the above-mentioned alloy or metal-nonmetal composite material is selected, the cold plate 102 is tightly attached to the electronic component 103 through mechanical fit, and the self-locking structure does not operate or only provides a small force to fix the cold plate 102 and the electronic component 103.

[0043] Another embodiment of the present invention also proposes a design method for a heat dissipation device for a missile-borne equipment based on solid material energy storage, comprising the following steps: selecting the solid energy storage material used for the cold plate 102 based on the heat source intensity, operating time, operating temperature of the electronic component 103, the mass limitations of the heat dissipation device, and the heat exchange area of ​​the cold plate 102. The specific selection steps are as follows:

[0044] Step 1: Select solid energy storage materials that meet the mass and space requirements of the heat dissipation device, and calculate the heat storage capacity of each solid energy storage material within the operating temperature range of electronic component 103. The heat storage capacity is the sum of the latent heat of phase change and the sensible heat of the solid energy storage material (material specific heat capacity multiplied by mass multiplied by operating temperature range);

[0045] Step 2, assuming the cold plate 102 is a semi-infinite plate, calculate the time t1 required for the temperature change on the inner wall of the cold plate 102 to be transmitted to the outermost side;

[0046] Step 3: Calculate the rate of change of thermal conductivity with time t1. The thermal conductivity range corresponding to a rate of change of 0.5% to 5% is considered acceptable. Among the solid energy storage materials selected in Step 1, the solid energy storage material with the highest thermal conductivity within the acceptable range is selected as the material for the cold plate 102. If no solid energy storage material with a thermal conductivity within the acceptable range exists, then the solid energy storage material with the highest thermal conductivity is selected as the material for making the cold plate 102.

[0047] Figure 2-1 and Figure 2-2The figures show the temperature-time curves of two missile-borne devices operating under the same heat source intensity but with different heat exchange areas. Figure 2-1 The heat exchange area between the cold plate 102 and the electronic component 103 of the missile-borne equipment shown is larger than that of the cold plate 102. Figure 2-2 The heat exchange area of ​​the missile-borne equipment is shown. The different structural missile-borne devices described in this invention are suitable for different materials, and the material selection steps described above can obtain the optimal energy storage material for different structures through theoretical analysis.

[0048] In summary, the heat dissipation device and its design method for missile-borne equipment based on solid material energy storage proposed in this invention can select the optimal heat storage material for different missile-borne equipment. At the same time, it utilizes the latent heat absorption characteristics of the martensitic-austenitic phase transformation of shape memory alloy materials and their high thermal conductivity to effectively extend the working time of electronic components in missile-borne equipment.

[0049] The above description is merely a preferred embodiment of the present invention and is not intended to limit the technical solution of the present invention in any way. Those skilled in the art should understand that, without departing from the spirit and principles of the present invention, the technical solution can be modified and replaced in several simple ways, and these modifications and replacements are all within the scope of protection covered by the claims.

Claims

1. A heat dissipation device for missile-borne equipment based on solid material energy storage, characterized in that, The system includes a cold plate (102), electronic components (103), and a non-heat source assembly (105) disposed inside an outer frame (101). The cold plate (102) is arranged below, and the non-heat source assembly (105) is fixed on the outer frame (101) above the cold plate (102). The cold plate (102) is a groove-shaped structure with an open top, and multiple ribs are machined on the inner side of the groove-shaped structure. The electronic components (103) are installed and fixed by the ribs. The cold plate (102) is made of solid energy storage material, and the cold plate (102) absorbs heat from the electronic components (103). The solid energy storage material is a shape memory alloy material, and a self-locking structure (104) is clamped on the outside of the cold plate (102); an actuator is arranged inside the self-locking structure (104), which can provide an inward driving force to the cold plate (102); when heat dissipation is required, the self-locking structure (104) drives the cold plate (102) to deform inward, the cold plate (102) is in close contact with the electronic component (103), the cold plate (102) deforms under the action of the driving force, the shape memory alloy material undergoes a phase transformation from martensite to austenite, the phase transformation process generates an elastothermic effect, and absorbs heat from the electronic component (103); The cold plate (102) uses its own heat capacity and latent heat of phase change to reduce the operating temperature of the electronic component (103). When the temperature of the electronic component (103) is lower than the phase change temperature of the cold plate (102), the cold plate (102) conducts heat out of the electronic component (103) through heat conduction. When the temperature of the electronic component (103) is higher than the phase change temperature of the cold plate (102), the cold plate (102) is driven to deform through the self-locking structure (104) to generate an elastic-thermal effect and reduce the temperature of the electronic component (103).

2. The heat dissipation device for missile-borne equipment based on solid material energy storage according to claim 1, characterized in that, The martensitic-austenitic phase transformation of the cold plate (102) is controlled by a self-locking structure (104), and the specific control logic is as follows: When the temperature of the electronic component (103) is below the initial value T0, the self-locking structure (104) does not operate; The temperature of the electronic component (103) is higher than the initial value T0, but lower than (Tt–5K), where Tt is the phase transformation temperature of the shape memory alloy. The electronic component (103) needs to be kept at a low temperature: control the operation of the self-locking structure (104) to make the inner wall of the cold plate (102) in close contact with the outer wall of the electronic component (103), and make the cold plate (102) deform by 3%-5% to produce an elastic-thermal effect, which rapidly cools down the electronic component (103). The temperature of the electronic component (103) is higher than the initial value T0, but lower than (Tt–5K), where Tt is the phase transition temperature of the shape memory alloy. The electronic component (103) does not need to be kept at a low temperature. Only the upper limit temperature Tm is set: the self-locking structure (104) is controlled to operate, so that the inner wall of the cold plate (102) is in close contact with the outer wall of the electronic component (103). The self-locking structure does not drive the cold plate (102) to produce additional deformation. It only relies on the heat capacity of the cold plate (102) to conduct heat away from the electronic component (103). When the temperature reaches Tt+0.5*(Tm-Tt), the self-locking structure (104) starts to operate, causing the cold plate (102) to produce a 3%-5% deformation, resulting in an elasto-thermal effect. The temperature of the electronic component (103) is higher than (Tt+15K), where Tt is the phase transition temperature of the shape memory alloy: the control self-locking structure (104) applies a driving force to the cold plate (102) so that the cold plate (102) and the electronic component (103) are in close contact without generating additional deformation. The control logic in this case has the highest priority.

3. The heat dissipation device for missile-borne equipment based on solid material energy storage according to claim 1, characterized in that, For electronic components (103) with uneven temperature distribution or large size, the solid energy storage material is a composite material formed by combining shape memory alloy with other materials; if the cold plate (102) uses shape memory alloy only in the middle, then the bottom or outer side of the cold plate (102) is connected to the self-locking structure (104), and the self-locking structure (104) provides an inward driving force to the cold plate (102); so that the self-locking structure (104) only needs to drive the shape memory alloy; if the cold plate (102) uses shape memory alloy only on both sides, then additional reinforcing ribs are arranged in the middle of the cold plate (102).

4. The heat dissipation device for missile-borne equipment based on solid material energy storage according to claim 1, characterized in that, The solid energy storage material is a metal alloy or a metal-nonmetal composite material. The cold plate (102) is tightly attached to the electronic component (103) through mechanical cooperation. The solid energy storage material completes heat conduction and heat absorption by contacting the surface of the electronic component (103).

5. The heat dissipation device for missile-borne equipment based on solid material energy storage according to claim 4, characterized in that, The metal alloy materials include aluminum alloys and copper alloys, and the metal-nonmetal composite materials include aluminum-paraffin composite materials.

6. The heat dissipation device for missile-borne equipment based on solid material energy storage according to claim 1, characterized in that, The electronic component (103) has a housing made of a metal material with high thermal conductivity.

7. A design method for a heat dissipation device for missile-borne equipment based on solid material energy storage, characterized in that, The heat dissipation device for missile-borne equipment based on solid material energy storage as described in claim 1 includes the following steps: selecting the solid energy storage material used in the cold plate (102) according to the heat source intensity, running time, running temperature of the electronic component (103), the mass limitation of the heat dissipation device, and the heat exchange area of ​​the cold plate (102).

8. The design method of the heat dissipation device for missile-borne equipment based on solid material energy storage according to claim 7, characterized in that: S1. Select solid energy storage materials that meet the mass and space requirements of the heat dissipation device, and calculate the heat storage capacity of each solid energy storage material within the operating temperature range of the electronic component (103). The heat storage capacity is the latent heat of phase change plus the sensible heat of the solid energy storage material. S2. Assuming the cold plate (102) is a semi-infinite plate, calculate the time t1 required for the temperature change of the inner wall surface of the cold plate (102) to be transmitted to the outermost side; S3. Calculate the change rate of thermal conductivity with time t1. The thermal conductivity corresponding to the change rate is 0.5% to 5%. Among the solid energy storage materials selected in step S1, select the solid energy storage material with the largest heat storage capacity within the selectable range of thermal conductivity as the material for making the cold plate (102). If there is no solid energy storage material with thermal conductivity within the selectable range, select the solid energy storage material with the largest thermal conductivity as the material for making the cold plate (102).

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