A CVD reaction apparatus

Abstract

The application relates to a CVD reaction device, belonging to the technical field of chemical vapor deposition, which comprises a frame body and a plurality of heat pipes arranged on the frame body, the heat pipes are arranged along the length direction of the frame body, both ends of the frame body are arranged as electrodes, both ends of the heat pipes are communicated with gas inlet pipes, a plurality of through holes are arranged on the lower side of the heat pipes, a base body for depositing a diamond layer is arranged below the heat pipes, a control mechanism for controlling the temperature of the base body and a lifting assembly for controlling the distance between the base body and the heat pipes are arranged on the side of the base body away from the heat pipes. The application has the effect of improving the dissociation rate of mixed gas and the deposition efficiency.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of chemical vapor deposition, in particular to a CVD reaction device. BACKGROUND

[0002] Diamond is a functional material with excellent performance, and hot wire chemical vapor deposition is commonly used in the preparation of large-size diamond films. In the preparation, the hot wire is usually heated to a high temperature, at which time a mixed gas of carbon source gas and hydrogen gas is passed to the outer surface of the hot wire. When the mixed gas contacts the surface of the hot wire, it is dissociated into an atomic state at high temperature and gradually deposited on the substrate below the hot wire, thereby forming a diamond film.

[0003] In related technologies, the mixed gas is passed to the surface of the high-temperature hot wire. Due to the thermal resistance generated by the high-temperature hot wire, the relatively low-temperature gas is easy to escape from around the hot wire, and only a small amount of gas reaches the surface of the hot wire and participates in the reaction process, thereby easily causing a decrease in the dissociation rate of the mixed gas, affecting the deposition efficiency. SUMMARY

[0004] In order to improve the dissociation rate of the mixed gas and thus improve the deposition efficiency, the present application provides a CVD reaction device.

[0005] The CVD reaction device provided by the present application adopts the following technical scheme:

[0006] A CVD reaction device comprises a frame body and a plurality of heat pipes arranged on the frame body. The heat pipes are arranged along the length direction of the frame body. Both ends of the frame body are arranged as electrodes. Both ends of the heat pipes are communicated with gas inlet pipes. A plurality of through holes are arranged on the lower side of the heat pipes. A substrate for depositing a diamond layer is arranged below the heat pipes. A control mechanism for controlling the temperature of the substrate and a lifting assembly for controlling the distance between the substrate and the heat pipes are arranged on the side of the substrate away from the heat pipes.

[0007] By using the above technical scheme, when the CVD reaction device is used, the heat pipes are installed on the frame body. At this time, the heat pipes are heated to a high temperature by electricity. The mixed gas is introduced into the heat pipes from the gas inlet pipes. At this time, the mixed gas enters the heat pipes and contacts the inner wall of the high-temperature heat pipes, thereby being dissociated into an atomic state. The mixed gas escapes from the heat pipes through the through holes and is deposited on the substrate to form a diamond layer. Thus, the possibility of a large amount of mixed gas escaping when the mixed gas moves from the outer side of the hot wire to the surface of the hot wire is reduced. The dissociation rate of the mixed gas is improved, and the deposition efficiency is improved.

[0008] Optionally, the distance between the two adjacent through holes at both ends of each heat pipe is greater than the distance between the two adjacent through holes at the middle of the heat pipe.

[0009] By adopting the above technical scheme, when the mixed gas is introduced into the two ends of the heat pipe at the same time, the distance between the through holes at the two ends of the heat pipe is large, thereby reducing the possibility that most of the mixed gas directly escapes from the through holes at the two ends of the heat pipe, and enabling the mixed gas to be dissociated into an atomic state during movement to the middle of the heat pipe and to be uniformly detached from the inside of the heat pipe and move in the direction close to the substrate, thereby being deposited on the surface of the substrate and forming a uniform diamond layer, and further improving the deposition efficiency.

[0010] Optionally, a support plate abutting against the lower side of the substrate is arranged below the substrate, a cavity is arranged in the middle of the support plate, the control mechanism is arranged in the cavity, a base is arranged on the side of the support plate away from the substrate, the lifting assembly comprises a plurality of lead screws symmetrically arranged on both sides of the axis of the support plate, the upper ends of the lead screws are inserted into the support plate and rotationally connected with the support plate, the upper ends of the two lead screws on the same side of the support plate are both provided with the same first conveying belt, and the first conveying belt is provided with a driving member for driving the first conveying belt to rotate.

[0011] By adopting the above technical scheme, when the distance between the substrate and the heat pipe is adjusted, the first conveying belt drives the lead screws to rotate through the driving member, so that the support plate moves away from the heat pipe and the substrate is placed on the upper side of the support plate, at this time, the substrate is driven by the support plate to move towards the heat pipe through the driving member, until the distance between the heat pipe and the substrate is suitable for the atomic state of the mixed gas to be deposited on the substrate, and in the process of forming the diamond layer, the control mechanism always keeps the temperature of the substrate in the temperature range in which the atomic state of the mixed gas is deposited on the substrate in the environment heated by the heat pipe, thereby further improving the deposition efficiency.

[0012] Optionally, the control mechanism comprises a plurality of driving plates located in the same horizontal plane and parallel to each other, the same end of each driving plate is rotationally connected with the same control plate, the same side of each driving plate is provided with a heating part in communication with each other, and the side of the driving plate away from the heating part is provided with a cooling part, and one of the control plates is provided with a rotating member for driving each driving plate to rotate.

[0013] By adopting the above technical scheme, when the number of heat pipes above the substrate is insufficient to keep the temperature of the surface of the substrate in the temperature range in which the atomic state of the mixed gas is deposited on the substrate, the driving plates are driven to rotate by the rotating member until the heating parts are located on the side of the driving plates close to the substrate and heat the substrate, and when the number of heat pipes above the substrate is sufficient to make the temperature of the surface of the substrate exceed the temperature range in which the atomic state of the mixed gas is deposited on the substrate, the driving plates are driven to rotate again by the rotating member until the cooling parts are close to the substrate and the substrate is cooled, thereby adjusting the temperature of the substrate according to different numbers of heat pipes, so that the substrate is always kept in the temperature range in which the atomic state of the mixed gas is deposited on the substrate, and the deposition efficiency is further improved.

[0014] Optionally, the rotating member comprises rotating shafts penetrating and fixedly connected to the middle part of each of the driving plates, one end of each of the rotating shafts penetrating the side wall of one of the control plates and the support plate and fixedly connected with a sprocket, each of the sprockets engaging with the same chain, and one of the sprockets being provided with a rotating motor.

[0015] By using the above technical scheme, when the driving plates are controlled to rotate, the rotating motor drives one of the sprockets to rotate, at this time, the chain drives the other sprockets to rotate, so that each of the driving plates rotates around the same hour hand along the corresponding rotating shaft, the conversion between heating and cooling is realized, and it is further convenient to control the temperature of the substrate in a temperature range suitable for the atomic deposition of the mixed gas on the substrate, and the deposition efficiency is improved.

[0016] Optionally, the heating part comprises heating holes opened in one side of the driving plate, the heating holes are arranged along the length direction of the driving plate, and the heating holes are symmetrically arranged on both sides of the axis of the support plate, each of the control plates is provided with a plurality of heating grooves for connecting adjacent two of the heating holes, and each of the control plates is provided with a heating pipe corresponding to the heating hole at both ends of the control plate.

[0017] By using the above technical scheme, when the substrate is heated, the rotating motor drives the sprockets and the chain to drive the driving plates to rotate until the heating part is close to the substrate, at this time, the heating holes in the driving plates are in communication with the heating grooves in the control plates, and the two heating pipes are in communication with the heating holes at both ends, at this time, hot oil is introduced into one of the heating pipes, at this time, the hot oil enters the heating holes along the heating pipe and flows through the heating holes and the heating grooves in communication in turn, and then flows out from the other heating pipe, so that the substrate is continuously heated in the flow process, the temperature deficiency of the heat pipe is compensated, and the deposition efficiency is improved.

[0018] Optionally, the cooling part comprises a plurality of cooling holes opened in the side of the driving plate away from the heating hole, the cooling holes are also symmetrically arranged on both sides of the axis of the support plate, the cooling holes are parallel to the heating holes, and the vertical distance between the cooling holes and the rotating shaft is greater than the vertical distance between the heating holes and the rotating shaft, the control plates are also provided with a plurality of cooling grooves for connecting adjacent two of the cooling holes, and each of the control plates is provided with a cooling pipe at both ends away from the heating pipe, the cooling pipe being in communication with two of the cooling holes corresponding to both ends of the control plate.

[0019] By adopting the technical scheme, when the base is cooled, the motor drives the chain wheel and the chain to drive the driving plate to overturn until the cooling part is close to the base, at this time, the cooling holes and the cooling grooves in the control plate are in communication with each other, and the cooling pipes are in communication with the cooling holes at both ends, at this time, the cooling water is fed into one of the cooling pipes, at this time, the cooling water flows through each cooling hole and cooling groove in communication with each other in turn and flows out from the other cooling pipe, so that the base is cooled in the process of cooling water flowing, the possibility of the base exceeding the temperature range is reduced, and the deposition efficiency is improved.

[0020] Optionally, the heat pipe is provided with a clamping piece for connecting the frame body at both ends, the clamping piece comprises a fixing hoop sleeved on the end of the heat pipe, and the lower ends of the fixing hoop are hingedly connected with arc-shaped and oppositely arranged connecting plates, one end of the connecting plate close to the fixing hoop and the side close to each other are fixedly connected with the same spring, and the spring is always in a stretched state.

[0021] By adopting the technical scheme, when the heat pipe is installed, the fixing hoop is sleeved on the end of the heat pipe and fixed with the heat pipe, at this time, the connecting plates are driven to rotate along the hinge points in the direction away from each other, at this time, the lower ends of the connecting plates are away from each other and the spring is stretched, and the connecting plates move in the direction close to the frame body until the end of the frame body is inserted between the connecting plates, at this time, the rotation of the connecting plates is stopped, the spring restores the deformation and pulls the connecting plates in the direction close to each other, so that the end of the frame body is clamped in the connecting plates, thereby facilitating the adjustment of the number of heat pipes on the frame body and facilitating the disassembly and installation.

[0022] In summary, the present application has at least one of the following beneficial technical effects:

[0023] 1. Electricity is turned on to make the heat pipe reach a high temperature state, and mixed gas is fed into the heat pipe from the air inlet pipe, at this time, the mixed gas enters the heat pipe and contacts the inner wall of the high-temperature heat pipe, so as to be dissociated into atomic state and escape from the heat pipe through the through hole until deposited on the base to form a diamond layer, thereby reducing the possibility of a large amount of mixed gas escaping when the mixed gas moves from the outside of the hot wire to the surface close to the hot wire, improving the dissociation rate of the mixed gas, and further improving the deposition efficiency;

[0024] 2. When the distance between the base and the heat pipe is adjusted, the first conveying belt is driven by the driving member to drive the lead screw to rotate, so that the supporting plate moves away from the heat pipe, and the base is placed on the upper side of the supporting plate, at this time, the base is driven by the supporting plate to move close to the heat pipe by the driving member, until the distance between the heat pipe and the base is suitable for the atomic state of the mixed gas to deposit on the base, and in the process of forming the diamond layer, the control mechanism always keeps the temperature of the base in the temperature range in which the atomic state of the mixed gas is deposited on the base in the environment heated by the heat pipe, thereby further improving the deposition efficiency;

[0025] 3. When the heat provided by the heat pipes above the substrate is insufficient, the rotating member drives the driving plate to rotate until the heating part is located on the side of the driving plate close to the substrate and heats the substrate. When the temperature provided by the heat pipes above the substrate is too high to make the surface temperature of the substrate too high, the rotating member drives the driving plate to rotate again until the cooling part is close to the substrate and cools the substrate, so that the temperature of the substrate can be adjusted according to different numbers of heat pipes, so that the substrate is always in the temperature range of the atomic state of the mixed gas deposited on the substrate, and the deposition efficiency is further improved. BRIEF DESCRIPTION OF DRAWINGS

[0026] Figure 1 is the overall structure schematic diagram of the CVD reaction device in the embodiment of the application.

[0027] Figure 2 is the structure schematic diagram of the embodiment of the application, which embodies the position relationship between the heat pipe and the support plate.

[0028] Figure 3 is Figure 1 is the enlarged view of the structure at A in

[0029] Figure 4 is the structure schematic diagram of the embodiment of the application, which embodies the position relationship between the support plate and the control mechanism.

[0030] Figure 5 is the structure schematic diagram of the embodiment of the application, which embodies the position relationship between the support plate and the driving member.

[0031] Figure 6 is the structure schematic diagram of the embodiment of the application, which embodies the position relationship between the lifting assembly and the support plate.

[0032] Figure 7 is the structure schematic diagram of the embodiment of the application, which embodies the position relationship between the heating part and the support plate.

[0033] Figure 8 is the structure schematic diagram of the embodiment of the application, which embodies the position relationship between the cooling part and the support plate.

[0034] Explanation of reference signs: 1, frame body; 11, electrode column; 12, molybdenum electrode; 13, heat pipe; 131, through hole; 14, air inlet pipe; 15, support plate; 151, cavity; 152, waist-shaped hole; 16, base; 2, clamping piece; 21, fixing hoop; 22, connecting plate; 23, spring; 3, lifting assembly; 31, lead screw; 32, first conveying belt; 33, driving piece; 331, second conveying belt; 332, driven wheel; 333, driving wheel; 334, driving motor; 4, control mechanism; 41, driving plate; 42, heating part; 421, heating hole; 422, heating groove; 423, heating pipe; 43, cooling part; 431, cooling hole; 432, cooling groove; 433, cooling pipe; 44, control plate; 45, rotating piece; 451, rotating shaft; 452, sprocket; 453, chain; 454, rotating motor; 455, limiting block; 46, hydraulic cylinder. DETAILED DESCRIPTION

[0035] The application will be further described in detail below with reference to the accompanying drawings.

[0036] The application discloses a CVD reaction device. Figure 1 and Figure 2 The CVD reaction device comprises a horizontal frame body 1, the frame body 1 comprises four vertical and symmetrical electrode columns 11, and the upper ends of two electrode columns 11 located on one side in the width direction of the frame body 1 are fixedly connected with the same horizontal molybdenum electrode 12. A plurality of heat pipes 13 are arranged on the frame body 1 along the length direction of the frame body 1, and four heat pipes 13 are arranged in the embodiment of the application. A plurality of through holes 131 are formed in the lower side of each heat pipe 13, the distance between two adjacent through holes 131 located at the two ends of the heat pipe 13 is greater than the distance between two adjacent through holes 131 located at the middle of the heat pipe 13, and the two ends of each heat pipe 13 are provided with a clamping piece 2 for connecting the molybdenum electrode 12.

[0037] An air inlet pipe 14 is arranged at each end of the heat pipe 13, and each heat pipe 13 located at the same end of the frame body 1 is in communication with the same air inlet pipe 14. A horizontal base body (not shown in the figure) is arranged below the heat pipes 13 along the length direction of the frame body 1, the lower side of the base body abuts against a support plate 15 for supporting the base body, the side, away from the base body, of the support plate 15 is provided with a base 16 parallel to the support plate 15, and the lifting assembly 3 for adjusting the vertical distance between the base body and the heat pipes 13 is arranged between the base 16 and the support plate 15. A cavity 151 is formed in the support plate 15, and the control mechanism 4 for adjusting the surface temperature of the base body is arranged in the cavity 151.

[0038] When using the CVD reaction device, the heat pipe 13 is installed on the frame 1 through the clamping piece 2, the lifting assembly 3 drives the support plate 15 to be close to the base 16, the base is placed on the upside of the support plate 15 and is moved by the support plate 15 driven by the lifting assembly 3, so as to adjust the vertical distance between the base and the heat pipe 13, at this time, the heat pipe 13 is powered to reach a high temperature state, and the base surface temperature is controlled by the control assembly to be in a temperature range suitable for the atomic state deposition of the mixed gas.

[0039] The mixed gas is introduced into the heat pipe 13 from the inlet pipe 14, at this time, the mixed gas enters the heat pipe 13 and contacts the inner wall of the heat pipe 13 at a high temperature, so as to be dissociated into an atomic state, and is separated from the heat pipe 13 through the through hole 131 until it is deposited on the base to form a diamond layer, and when the mixed gas is introduced into both ends of the heat pipe 13 at the same time, the distance between the through holes 131 at both ends of the heat pipe 13 is large, so as to reduce the possibility of most of the mixed gas escaping directly from the through holes 131 at both ends of the heat pipe 13, so that the mixed gas is dissociated into an atomic state during the movement to the middle of the heat pipe 13 and is uniformly separated from the inside of the heat pipe 13, thereby improving the deposition effect.

[0040] Referring to Figure 1 and Figure 3 , the clamping piece 2 comprises a fixed clamp 21 which is adjusted at the end of the heat pipe 13 and is fixedly connected with the heat pipe 13, and the lower end of the fixed clamp 21 is hingedly connected with two arc-shaped and oppositely arranged connecting plates 22, and the side walls of the connecting plates 22 away from the fixed clamp 21 abut against each other. The side of the connecting plates 22 close to the fixed clamp 21 is fixedly connected with the same horizontal spring 23, the spring 23 is always in a stretched state, and the vertical plane where the two connecting plates 22 are located is parallel to the length direction of the heat pipe 13.

[0041] When installing the heat pipe 13, the fixed clamp 21 is sleeved on the end of the heat pipe 13 and is fixed with the heat pipe 13, at this time, the connecting plates 22 are driven to rotate along the hinge points in the direction away from each other, at this time, the lower ends of the connecting plates 22 are away from each other and the spring 23 is stretched, the heat pipe 13 is moved in the direction close to the frame 1, until the molybdenum electrode 12 is inserted between the connecting plates 22, at this time, the rotation of the connecting plates 22 is stopped, the spring 23 restores the deformation and pulls the connecting plates 22 in the direction close to each other, so as to clamp the molybdenum electrode 12 with the heat pipe 13, thereby facilitating the adjustment of the number of heat pipes 13 on the frame 1, and facilitating the disassembly and installation.

[0042] Referring to Figure 1 , Figure 4 and Figure 5The lifting assembly 3 comprises four vertical lead screws 31 evenly distributed at four corner positions of the support plate 15 close to the base 16, one end of each lead screw 31 close to the support plate 15 is inserted into the support plate 15 and rotationally connected with the support plate 15, and one end of each lead screw 31 close to the base 16 is inserted into the base 16 and threadedly connected with the base 16. The upper ends of two lead screws 31 located at the same side of the length direction of the support plate 15 are both provided with a same first conveying belt 32, and the lead screws 31 are provided with driving members 33 for driving the lead screws 31 to rotate.

[0043] The driving members 33 comprise a same second conveying belt 331 installed at the upper ends of the two lead screws 31 below one of the molybdenum electrodes 12, and the second conveying belt 331 is located below the first conveying belt 32, a driven wheel 332 located below the first conveying belt 32 is sleeved and fixedly connected with one of the lead screws 31 below the end of the second conveying belt 331 away from the second conveying belt 331, a driving wheel 333 is engaged with one side of the driven wheel 332, and a driving motor 334 fixedly connected with the side wall of the support plate 15 is installed at the shaft center of the upper side of the driving wheel 333.

[0044] When the distance between the base body and the heat pipe 13 is adjusted, the driving motor 334 drives the driving wheel 333 to drive the driven wheel 332 to rotate, at this time, the lead screws 31 fixedly connected with the driven wheel 332 rotate, and other lead screws 31 are driven to rotate along the same clock direction through the first conveying belt 32 and the second conveying belt 331, so that the support plate 15 moves away from the heat pipe 13, and the base body is placed on the upper side of the support plate 15, at this time, the driving motor 334 is reversed to drive the support plate 15 to move the base body towards the heat pipe 13, until the distance between the heat pipe 13 and the base body is suitable for the atomic state of the mixed gas to be deposited on the base body, and the preparation of the diamond layer is completed.

[0045] With reference to Figure 1 , Figure 4 and Figure 6 , the control mechanism 4 comprises three horizontal driving plates 41 evenly distributed along the length direction of the support plate 15, the driving plates 41 are arranged along the width direction of the support plate 15, the two sides of the width direction of the driving plates 41 are both arranged as arc surfaces protruding away from each other, and the height of the cavity 151 is greater than the width of the driving plates 41. The one side of the horizontal arrangement of the driving plates 41 is provided with a heating part 42, and the other side is provided with a cooling part 43. The two ends of the driving plates 41 are both provided with horizontal control plates 44, the side walls of the driving plates 41 are both in abutment with the side walls of the control plates 44, and the side of the control plates 44 away from the driving plates 41 is in abutment with the side wall of the cavity 151. The control plates 44 are provided with rotating members 45 for controlling the rotation of the driving plates 41, and the two ends of the lower side of the control plates 44 are both fixedly connected with hydraulic cylinders 46 for driving the control plates 44 to move along the vertical direction, and the other end of the hydraulic cylinders 46 is fixedly connected with the lower side wall of the cavity 151.

[0046] When the number of heat pipes 13 above the substrate is insufficient to make the substrate surface temperature in the temperature range of the atomic state of the mixed gas deposited on the substrate, the hydraulic cylinder 46 is retracted to drive the control plate 44 to drive the driving plate 41 to descend to the middle of the cavity 151, and the driving plate 41 is rotated by the rotating piece 45 until the heating part 42 is located on the side of the driving plate 41 close to the substrate, at this time the hydraulic cylinder 46 is extended and the driving plate 41 is in abutment with the upper end side wall of the cavity 151, at this time the heating part 42 heats the substrate.

[0047] When the number of heat pipes 13 above the substrate is sufficient to make the substrate surface temperature exceed the temperature range of the atomic state of the mixed gas deposited on the substrate, the hydraulic cylinder 46 is retracted to drive the control plate 44 to drive the driving plate 41 to descend to the middle of the cavity 151, and the driving plate 41 is rotated again by the rotating piece 45 until the cooling part 43 is located on the side of the driving plate 41 close to the substrate, at this time the hydraulic cylinder 46 is extended and the driving plate 41 is in abutment with the upper end side wall of the cavity 151, at this time the cooling part 43 cools the substrate, so that the substrate temperature is adjusted according to the different number of heat pipes 13, so that the substrate is always in the temperature range of the atomic state of the mixed gas deposited on the substrate.

[0048] The rotating piece 45 comprises three rotating shafts 451 adapted to the driving plate 41, the rotating shafts 451 are arranged along the length direction of the driving plate 41, the rotating shafts 451 pass through the driving plate 41 and are fixedly connected with the driving plate 41, and the both ends of the driving shaft pass through the control plate 44 and are rotatably connected with the control plate 44. The both sides of the support plate 15 are provided with vertical waist-shaped holes 152 adapted to the rotating shafts 451, the both ends of the rotating shafts 451 are inserted into the waist-shaped holes 152 and are slidably connected with the side walls of the support plate 15. The same side of the rotating shafts 451 is sleeved and fixedly connected with vertical chain wheels 452, the chain wheels 452 are engaged with the same chain 453, and one of the chain wheels 452 is installed with a rotating motor 454 at the position away from the shaft center of the side of the support plate 15, the rotating motor 454 is fixedly connected with a limiting block 455 on the upper side, the limiting block 455 is inserted into the corresponding waist-shaped hole 152 and is slidably connected with the side walls of the support plate 15.

[0049] When the driving plates 41 are controlled to rotate, the rotating motor 454 drives one of the sprockets 452 to rotate, at this time, the chain 453 drives the other sprockets 452 to rotate, so that each driving plate 41 rotates along the corresponding rotating shaft 451 around the same hour hand, and the conversion of the heating part 42 and the cooling part 43 is controlled, so as to control the temperature of the substrate in a temperature range suitable for the atomic state deposition of the mixed gas on the substrate, and improve the deposition efficiency; and when the hydraulic cylinder 46 drives the control plate 44 to drive the driving plate 41 to move in the vertical direction, the rotating shaft 451 is slidingly connected with the side wall of the support plate 15, so as not to affect the movement of the driving plate 41, and the limiting block 455 is inserted into the waist-shaped hole 152, so as to limit the rotation of the rotating motor 454 without affecting the movement of the driving plate 41, and further facilitate the conversion of the heating part 42 and the cooling part 43, and improve the deposition efficiency.

[0050] Figure 1 、 Figure 6 and Figure 7 The heating part 42 comprises a heating hole 421 which is arranged on one side of the driving plate 41 and along the length direction of the driving plate 41, and the driving plate 41 at both ends of the control plate 44 is provided with one heating hole 421, and the driving plate 41 located at the middle of the control plate 44 is provided with two symmetrical heating holes 421, and the control plate 44 close to the side of the sprocket 452 is provided with two heating grooves 422 for communicating the adjacent two heating holes 421, and the other control plate 44 is provided with a heating pipe 423 which is penetratingly arranged and fixedly connected with the heating hole 421 corresponding to the both ends of the control plate 44, and the heating grooves 422 located at the middle of the control plate 44 are also arranged between the two heating pipes 423, and the heating grooves 422 on the two control plates 44 are close to each other. The side wall of the support plate 15 is also provided with a waist-shaped hole 152 which is adapted to the heating pipe 423, and the end of the heating pipe 423 away from the driving plate 41 is inserted into the waist-shaped hole 152 and slidingly connected with the side wall of the support plate 15.

[0051] When the substrate is heated, the rotating motor 454 drives the sprocket 452 and the chain 453 to drive the driving plate 41 to rotate, until the heating part 42 is close to the substrate, at this time, the heating holes 421 in the driving plate 41 are communicated with the heating grooves 422 in the control plate 44, and the two heating pipes 423 are communicated with the heating holes 421 at both ends, at this time, the hot oil is continuously fed into one of the heating pipes 423, the hot oil enters the heating holes 421 along the heating pipe 423 and flows through the heating holes 421 and the heating grooves 422 which are communicated with each other in turn, and then flows out from the other heating pipe 423, so as to continuously heat the substrate in the flow process, and compensate for the insufficient temperature of the heat pipe 13, so as to control the surface temperature of the substrate.

[0052] Referring to Figure 4 and Figure 8The cooling part 43 comprises a cooling hole 431 provided on the driving plate 41 away from the heating hole 421 and along the length direction of the driving plate 41, and two symmetrical cooling holes 431 are provided on the driving plate 41. The vertical distance between the cooling hole 431 and the rotating shaft 451 is greater than the vertical distance between the heating hole 421 and the rotating shaft 451. The control plate 44 away from the sprocket 452 is provided with three cooling grooves 432 which are uniformly distributed and used for connecting two adjacent cooling holes 431. The other control plate 44 is provided with a cooling pipe 433 which is connected with the cooling hole 431 at the two ends of the control plate 44. The middle part of the two cooling pipes 433 is also provided with a cooling groove 432 which is close to the middle part of the control plate 44 of the sprocket 452. The cooling grooves 432 on the two control plates 44 are close to each other.

[0053] When the substrate is cooled, the rotating motor 454 drives the sprocket 452 and the chain 453 to drive the driving plate 41 to overturn until the cooling part 43 is close to the substrate. At this time, the cooling hole 431 is connected with the cooling groove 432 in the control plate 44, and the cooling pipe 433 is connected with the cooling hole 431 at both ends. At this time, the cooling water is continuously introduced into one of the cooling pipes 433. At this time, the cooling water flows through each cooling hole 431 and cooling groove 432 which are connected with each other in turn, and then flows out from the other cooling pipe 433. Thus, the substrate is cooled in the process of cooling water flowing, so as to reduce the possibility that the temperature of the substrate exceeds the temperature range.

[0054] The implementation principle of the CVD reaction device in the embodiment of the application is as follows: when the CVD reaction device is used, the fixing hoop 21 is fixed at the end of the heat pipe 13, the connecting plate 22 is driven to rotate in the direction away from each other, and the heat pipe 13 is moved to the direction close to the frame body 1 until the molybdenum electrode 12 is inserted between the connecting plates 22, so that the molybdenum electrode 12 is clamped with the heat pipe 13. The driving motor 334 drives the driving wheel 333 to drive the driven wheel 332 to rotate. At this time, the lead screw 31 fixedly connected with the driven wheel 332 rotates, and drives other lead screws 31 to rotate along the same clock by the first conveying belt 32 and the second conveying belt 331, so that the supporting plate 15 descends and the substrate is placed on the upper side of the supporting plate 15. At this time, the driving motor 334 is reversed to drive the supporting plate 15 to move the substrate to the direction close to the heat pipe 13 until the distance between the heat pipe 13 and the substrate is suitable for the atomic state of the mixed gas to be deposited on the substrate.

[0055] At this time, the heat pipe 13 reaches a high temperature state by being electrified. When the temperature provided by the heat pipe 13 above the substrate is insufficient, the hydraulic cylinder 46 is contracted to drive the control plate 44 to drive the driving plate 41 to descend to the middle part of the cavity 151. The rotating motor 454 drives the driving plate 41 to rotate by the sprocket 452 and the chain 453, so that the heating part 42 is close to the substrate. The hydraulic cylinder 46 is elongated to make the driving plate 41 abut against the upper end side wall of the cavity 151, and the hot oil is introduced into the heating pipe 423 to heat the substrate.

[0056] When the number of heat pipes 13 above the base provides too high temperature, the hydraulic cylinder 46 is retracted to drive the control plate 44 to drive the driving plate 41 to descend to the middle of the cavity 151, the rotating motor 454 drives the driving plate 41 to rotate again through the sprocket 452 and the chain 453, and the cooling part 43 is close to the base, the driving hydraulic cylinder 46 is elongated and the driving plate 41 is in abutment with the upper end side wall of the cavity 151, the cooling water is introduced into the cooling pipe 433 to cool the base, at this time the mixed gas is introduced into the heat pipe 13 from the air inlet pipe 14, at this time the mixed gas enters the heat pipe 13 and contacts with the high temperature inner side wall of the heat pipe 13, so as to be dissociated into atomic state, and then escapes from the heat pipe 13 through the through hole 131 until deposited on the base, and the diamond layer preparation is completed.

[0057] The above are preferred embodiments of the present application, and are not intended to limit the protection scope of the present application, therefore: any equivalent changes made on the structure, shape, principle of the present application shall be covered within the protection scope of the present application.

Claims

1. A CVD reactor apparatus, characterized by: The utility model provides a diamond deposition device, including frame (1) and a plurality of heat pipe (13) are arranged on the frame (1), the heat pipe (13) is arranged along the length direction of frame (1), both ends of frame (1) are arranged as electrode, both ends of heat pipe (13) are communicated with the air inlet pipe (14), and the lower side of heat pipe (13) is equipped with a plurality of through -hole (131), and the lower side of heat pipe (13) is equipped with the base body for depositing diamond layer, and the side of base body away from heat pipe (13) is equipped with control mechanism (4) for controlling the temperature of base body and lifting assembly (3) for controlling the distance between base body and heat pipe (13). The distance between the adjacent two through -holes (131) at both ends of each heat pipe (13) is greater than the distance between the adjacent two through -holes (131) in the middle of heat pipe (13).

2. The CVD reactor of claim 1, wherein: The lower side of base body is equipped with the support plate (15) that abuts with, the support plate (15) is equipped with the cavity (151) in the middle, the control mechanism (4) is located in the cavity (151), the side of support plate (15) away from base body is equipped with base (16), lifting assembly (3) includes a plurality of symmetrical silk lead screws (31) that are arranged in the axis both sides of support plate (15), the upper end of silk lead screw (31) is inserted in support plate (15) and is rotatably connected with support plate (15), and the upper end of two silk lead screws (31) located on the same side of support plate (15) is equipped with the same first conveyor belt (32), and the first conveyor belt (32) is equipped with the driving part (33) for driving the rotation of first conveyor belt (32).

3. The CVD reactor of claim 2, wherein: The control mechanism (4) includes a plurality of driving plates (41) located in the same horizontal plane and parallel to each other, the same end of the driving plate (41) is rotatably connected with the same control plate (44), the same side of the driving plate (41) is provided with a heating portion (42) that is in communication with each other, and the side of the driving plate (41) away from the heating portion (42) is provided with a cooling portion (43), one of the control plates (44) is provided with a rotating member (45) for driving the rotation of each driving plate (41).

4. The CVD reactor of claim 3, wherein: The rotating member (45) includes a rotating shaft (451) penetrating and fixedly connected in the middle of each driving plate (41), the same end of the rotating shaft (451) penetrates the side wall of one of the control plates (44) and the support plate (15) and is fixedly connected with a sprocket (452), the sprocket (452) is engaged with the same chain (453), and one of the sprockets (452) is provided with a rotating motor (454).

5. The CVD reactor of claim 4, wherein: The heating part (42) comprises heating holes (421) opened on one side of the driving plate (41), the heating holes (421) are arranged along the length direction of the driving plate (41), and the heating holes (421) are symmetrically arranged on both sides of the axis of the support plate (15), a plurality of heating grooves (422) for connecting two adjacent heating holes (421) are arranged on the control plate (44), and one end of the control plate (44) is provided with a heating pipe (423) communicated with the heating hole (421) corresponding to the one end of the control plate (44).

6. The CVD reactor of claim 5, wherein: The cooling part (43) comprises a plurality of cooling holes (431) opened on the side of the driving plate (41) away from the heating holes (421), the cooling holes (431) are also symmetrically arranged on both sides of the axis of the support plate (15), the cooling holes (431) are parallel to the heating holes (421), and the vertical distance between the cooling holes (431) and the rotating shaft (451) is greater than the vertical distance between the heating holes (421) and the rotating shaft (451), a plurality of cooling grooves (432) for connecting two adjacent cooling holes (431) are also arranged on the control plate (44), and the control plate (44) away from the heating pipe (423) is provided with a cooling pipe (433) at both ends, the cooling pipe (433) is communicated with two cooling holes (431) corresponding to both ends of the control plate (44).

7. The CVD reactor of claim 1, wherein: The heat pipe (13) is provided with a clamping piece (2) for connecting the frame body (1) at both ends, the clamping piece (2) comprises a fixing hoop (21) sleeved on the end of the heat pipe (13), the lower side of the fixing hoop (21) is hinged with two arc-shaped and oppositely arranged connecting plates (22) at both ends, one end of the connecting plate (22) close to the fixing hoop (21) and the side close to each other are fixedly connected with the same spring (23), and the spring (23) is always in a stretched state.

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