Semiconductor process chamber and semiconductor process method

Abstract

The present application provides a semiconductor process chamber, comprising a chamber and a base arranged in the chamber, the base being used to carry a wafer, the semiconductor process chamber also comprising a control device and a base drive assembly; the base drive assembly is fixedly connected to the base, and the base drive assembly is used to drive the base to rotate and rise or fall; the control device is used to control the semiconductor process chamber to perform a multi-step semiconductor process on the wafer located on the base, and to control the base drive assembly to drive the base to rotate the wafer by a preset angle between each two adjacent semiconductor processes. In the present application, the rotation drive module can drive the core shaft to drive the base to rotate by a preset angle between each two adjacent semiconductor processes, so that after each film of a certain thickness is deposited, the wafer is rotated by a preset angle and the film is deposited again, thereby ensuring the uniformity of the film deposited on the wafer surface. The present application also provides a semiconductor process method.

Description

Technical Field

[0001] The present application relates to the field of semiconductor process equipment, and in particular, to a semiconductor process chamber and a semiconductor process method. Background Art

[0002] With the continuous development of integrated circuit technology, the speed of electronic product replacement has steadily increased, and electronic components have gradually developed towards miniaturization, integration and refinement, which has put forward higher requirements for thin film deposition technology.

[0003] The ALD process deposits thin films by alternately introducing multiple reactive gases or vapor pulses into a reaction chamber. Chemical reactions within the chamber accumulate the gases in the form of single atomic layers, gradually accumulating them to the target film thickness. Due to its exceptional three-dimensional coplanarity, excellent conformality, and precise thickness control, ALD has been widely used in industries such as semiconductor devices, integrated circuits, and solar cells.

[0004] The reaction source in an atomic layer deposition system is extremely sensitive to the temperature distribution along the transmission path. If a cold spot appears during transmission or transmission occurs at a relatively low temperature, there's a risk that the reaction source will become difficult to purge and may even condense, generating particles. Solid-state reaction sources are particularly sensitive to low temperatures. Therefore, some atomic layer deposition systems employ an inner and outer outer cavity configuration. The inner cavity serves as the reaction chamber, maintaining a higher temperature to prevent condensation, while the outer cavity acts as a protective chamber with water-cooled outer walls to prevent burns, effectively solving the cold spot problem.

[0005] When thin film deposition is performed in an atomic layer deposition process chamber, the interior of the chamber is in a vacuum environment as a whole. The wafer is placed on a fixed heating base, which heats the wafer to the temperature required by the process. There is an air inlet device above the wafer, which diffuses various reaction sources to the wafer in a certain direction through the air inlet device to form a deposited thin film. In this process, due to the outlet direction and structural design of the air inlet device, the diffusion distribution of the reaction gas has a certain degree of unevenness, and the overall coverage of the film is poor, resulting in poor uniformity of thin film deposition, easy generation of particles, and failure to meet process requirements. Therefore, how to provide a semiconductor process chamber that can improve the uniformity of thin film deposition has become a technical problem that needs to be solved urgently in this field. Summary of the Invention

[0006] The present application aims to provide a semiconductor process chamber and a semiconductor process method, wherein the semiconductor process chamber can improve the uniformity of thin film deposition.

[0007] To achieve the above-mentioned object, as one aspect of the present application, a semiconductor process chamber is provided, comprising a chamber and a susceptor disposed in the chamber, wherein the susceptor is used to support a wafer, and the semiconductor process chamber further comprises a control device and a susceptor drive assembly;

[0008] The base drive assembly is fixedly connected to the base, and the base drive assembly is used to drive the base to rotate and rise or fall;

[0009] The control device is used to control the semiconductor process chamber to perform multiple semiconductor processes on the wafer located on the base, and to control the base drive component to drive the base to rotate the wafer by a preset angle between each two adjacent semiconductor processes.

[0010] Optionally, the control device is specifically used to:

[0011] The semiconductor process chamber is controlled to perform N steps of semiconductor process on the wafer located on the base, and between each two adjacent steps of the semiconductor process, the base drive component is controlled to drive the base to drive the wafer to rotate a preset angle, wherein the preset angle is equal to 360° / N, and N is an integer greater than or equal to 2.

[0012] Optionally, the control device is specifically used to:

[0013] Controlling the pedestal driving assembly to drive the pedestal to a process position, and controlling the semiconductor process chamber to perform a semiconductor process on a wafer on the pedestal;

[0014] The base driving assembly is controlled to drive the base to descend below the process position, and the base driving assembly is controlled to drive the base to drive the wafer to rotate by the preset angle.

[0015] Optionally, the base driving assembly includes a lifting device and a rotating device, the rotating device includes a rotating seat, a core shaft and a rotating driving module, a fitting hole is formed in the rotating seat, the core shaft is arranged in the fitting hole and can rotate around its own axis in the fitting hole, the top end of the core shaft is used to be fixedly connected to the base, and the rotating driving module is used to drive the core shaft to drive the base to rotate a preset angle between two adjacent semiconductor processes; the lifting device is fixedly arranged at the bottom of the cavity, and is used to drive the rotating seat to drive the core shaft and the base to rise or fall.

[0016] Optionally, the inner wall of the fitting hole and the outer surface of the core shaft are sealed by magnetic fluid.

[0017] Optionally, the base includes a carrying plate and a lifting shaft fixedly connected to the bottom of the carrying plate, and the bottom end of the lifting shaft passes through a through hole on the bottom wall of the cavity to the outside of the cavity;

[0018] The rotating device also includes a bellows, the top end of the bellows is used to be fixedly connected to the bottom of the cavity and seal the through hole, the bottom end of the bellows is sealed and connected to the top of the rotating seat, the top end of the core shaft enters the bellows, and the top end of the core shaft is fixedly connected to the bottom end of the lifting shaft.

[0019] Optionally, the lifting device includes a lifting guide rail, a lifting support and a lifting drive module, the lifting guide rail is fixedly connected to the cavity, the lifting support is movably arranged on the lifting guide rail, the rotating seat is fixedly connected to the lifting support, and the lifting drive module is used to drive the lifting support to move up and down along the lifting guide rail to drive the rotating device and the base to move up and down.

[0020] Optionally, the lifting support includes a vertical portion and a horizontal portion, the vertical portion extends in a vertical direction, the horizontal portion extends in a horizontal direction, the vertical portion is fixedly connected to the horizontal portion, and the vertical portion is movably arranged on the lifting guide rail;

[0021] A first avoidance hole is formed in the horizontal portion and passes through the horizontal portion in a vertical direction. The rotating device also includes a mounting plate, a top of the mounting plate is formed with an avoidance groove, and a bottom of the avoidance groove is formed with a second avoidance hole that passes through the bottom of the mounting plate. The mounting plate is fixedly arranged at the bottom of the horizontal portion, the bottom end of the rotating seat passes through the first avoidance hole and is fixedly arranged in the avoidance groove, and the bottom end of the core shaft passes through the second avoidance hole to the bottom of the mounting plate.

[0022] Optionally, the bottom end of the bellows has a bottom sealing flange, an air blowing channel is formed inside the bottom sealing flange, one end of the air blowing channel is communicated with the inner wall of the bottom sealing flange, and the other end of the air blowing channel extends to the outer surface of the bottom sealing flange and forms an air inlet;

[0023] The semiconductor process chamber further includes a preset gas source and a connecting pipe. The preset gas source is connected to the gas inlet through the connecting pipe. The preset gas source is used to provide a preset protective gas to the bellows.

[0024] Optionally, an electronic device is provided in the base;

[0025] A first wiring hole coaxial with the core shaft is formed inside the core shaft;

[0026] The rotating device further includes a cable bridge and a rotating slip ring, wherein the rotating slip ring includes a fixed portion and a rotating portion; the top of the cable bridge is fixedly connected to the core shaft, the bottom of the cable bridge is fixedly connected to the rotating portion of the rotating slip ring, the fixed portion of the rotating slip ring is fixedly connected to the rotating seat, and the rotating slip ring has a cable interface;

[0027] The electronic device is electrically connected to the cable interface via a cable;

[0028] The cable passes through the first wiring hole and is electrically connected to the cable interface through the wiring bridge.

[0029] Optionally, a second wiring hole coaxial with the lifting shaft is formed inside the lifting shaft, and the cable of the electronic device passes through the second wiring hole to enter the first wiring hole.

[0030] Optionally, the wiring bridge includes a shell, a cable inlet plug and a cable outlet plug, the cable inlet plug and the cable outlet plug are both arranged in the shell, the inner wall of the shell has a connecting line, the cable outlet plug is connected to the rotating part of the rotating slip ring through the connecting line, the cable inlet plug is connected to the cable of the electronic device, and the cable outlet plug is docked and connected to the cable inlet plug.

[0031] Optionally, the rotating device further comprises a fixing plate and a plurality of connecting columns;

[0032] The top of the fixed portion of the rotating slip ring is fixedly connected to the fixed plate;

[0033] A plurality of connecting columns are arranged vertically and in parallel, the top ends of the connecting columns are fixedly connected to the rotating seat, and the bottom ends of the connecting columns are fixedly connected to the fixing plate.

[0034] Optionally, the rotating device includes three connecting columns.

[0035] Optionally, the base drive assembly further includes a zero position detection module and a trigger;

[0036] The zero position detection module is fixedly connected to the rotating base, and the zero position detection module is used to detect the rotation angle of the base;

[0037] The trigger member is fixedly arranged on the core shaft, and the height of the trigger member corresponds to the height of the zero position detection module. The trigger member is used to trigger the zero position detection module to detect the rotation angle of the base when the core shaft rotates to the corresponding direction of the zero position detection module.

[0038] Optionally, the zero position detection module is fixedly arranged on the mounting plate.

[0039] Optionally, the zero position detection module includes a light emitting element and a photoelectric sensor, the light emitting element is used to emit detection light toward the photoelectric sensor in a vertical direction, and the trigger element can be blocked between the light emitting element and the photoelectric sensor when rotated to the corresponding direction to trigger the zero position detection module.

[0040] Optionally, the rotation drive module includes a driving part, a transmission belt and a pulley, the pulley is mounted on the core shaft and is coaxial with the core shaft, the driving part is connected to the pulley through the transmission belt, and is used to drive the pulley through the transmission belt to drive the core shaft to rotate.

[0041] Optionally, a cooling passage is formed inside the rotating seat, and a liquid inlet and a liquid outlet are formed at both ends of the cooling passage on the surface of the rotating seat respectively, and the liquid inlet and the liquid outlet are used to be connected to a cold source to allow coolant to flow into the cooling passage.

[0042] Optionally, the semiconductor process chamber further includes an air intake system; the air intake system is used to transport gas used for the semiconductor process into the chamber, and the air intake system allows the gas to diffuse from one side of the susceptor to the other side above the susceptor.

[0043] As a second aspect of the present application, a semiconductor process method is provided, which includes: controlling a semiconductor process chamber to perform a multi-step semiconductor process on a wafer located on a base, and controlling the base to drive the wafer to rotate a preset angle between each two adjacent semiconductor processes.

[0044] Optionally, the preset angle is equal to 360° / N, where N is an integer greater than or equal to 2;

[0045] The control semiconductor process chamber performs a multi-step semiconductor process on a wafer on a susceptor, including:

[0046] The semiconductor process chamber is controlled to perform N steps of semiconductor process on the wafer on the susceptor.

[0047] In the semiconductor process chamber and semiconductor process method provided in the present application, the base drive assembly can drive the base to rotate and lift, and the control device can control the base drive assembly to drive the base to drive the wafer to rotate a preset angle between each two adjacent semiconductor processes, so that the wafer can undergo multiple semiconductor processes in different directions. After each film of a certain thickness is deposited (or a certain depth is etched), the wafer is rotated by a preset angle and the film is deposited (or etched) again. Even if the direction of the air outlet of the semiconductor process chamber air inlet device is limited, the uniformity of the film deposited (or etched) on the wafer surface can be guaranteed, thereby ensuring the yield of the wafer product. BRIEF DESCRIPTION OF THE DRAWINGS

[0048] The accompanying drawings are used to provide a further understanding of the present application and constitute a part of the specification. Together with the following detailed description, they are used to explain the present application but do not constitute a limitation of the present application. In the accompanying drawings:

[0049] Figure 1 1 is a schematic diagram of a portion of the structure of a semiconductor process chamber provided in an embodiment of the present application;

[0050] Figure 2 1 is a schematic diagram of a portion of the structure of a semiconductor process chamber provided in an embodiment of the present application;

[0051] Figure 3 1 is a schematic diagram of a portion of the structure of a semiconductor process chamber provided in an embodiment of the present application;

[0052] Figure 4 1 is a schematic diagram of a portion of the structure of a semiconductor process chamber provided in an embodiment of the present application;

[0053] Figure 5 This is a schematic diagram of a state where a susceptor is located at a wafer transfer position in a semiconductor process chamber provided by an embodiment of the present application;

[0054] Figure 6 This is a schematic diagram of a state where a susceptor is located at a process position in a semiconductor process chamber provided by an embodiment of the present application;

[0055] Figure 7 This is a schematic diagram of a state where a susceptor is in a rotational position in a semiconductor process chamber provided by an embodiment of the present application;

[0056] Figure 8 This is a flow chart of an embodiment of performing a semiconductor process using the semiconductor process chamber provided by the present application.

[0057] Description of reference numerals:

[0058] 100: Cavity 200: Base

[0059] 210: Carrying plate 220: Lifting shaft

[0060] 221: Docking seal 230: Cable

[0061] 300: Lifting device 310: Lifting rail

[0062] 320: Lifting support 321: Vertical part

[0063] 322: horizontal part 400: rotating device

[0064] 410: Rotating seat 411: Rotating seat sealing ring

[0065] 412: liquid inlet 413: liquid outlet

[0066] 420: Mandrel 430: Bellows

[0067] 431: Bottom sealing flange 432: Air blowing channel

[0068] 440: Mounting plate 450: Cable tray

[0069] 451: Housing 452: Cable inlet plug

[0070] 453: Cable outlet plug 460: Rotating slip ring

[0071] 461: Fixed part 462: Rotating part

[0072] 470: Fixed plate 480: Connecting column

[0073] 490: Pulley 510: Zero position detection module

[0074] 520: trigger 600: connecting pipe DETAILED DESCRIPTION

[0075] The following describes the specific embodiments of the present application in detail with reference to the accompanying drawings. It should be understood that the specific embodiments described herein are only used to illustrate and explain the present application and are not intended to limit the present application.

[0076] In order to solve the above technical problems, as one aspect of the present application, a semiconductor process chamber is provided, such as Figure 1 As shown, the semiconductor process chamber includes a cavity 100 and a base 200 arranged in the cavity 100, the base 200 is used to carry the wafer, and the semiconductor process chamber also includes a control device (not shown in the figure) and a base drive assembly (including a lifting device 300 and a rotating device 400).

[0077] The base drive assembly is fixedly connected to the base 200, and the base drive assembly is used to drive the base 200 to rotate and rise or fall;

[0078] The control device is used to control the semiconductor process chamber to perform multiple semiconductor processes on the wafer located on the base 200, and to control the base driving assembly to drive the base 200 to rotate the wafer by a preset angle between each two adjacent semiconductor processes.

[0079] It should be noted that a one-step semiconductor process in the present application refers to a process of introducing one or more process gases into the cavity 100 and exhausting the gas in the cavity 100 after completing the film forming process or etching process on the wafer on the base 200.

[0080] In the present application, the base driving assembly can drive the base 200 to rotate and lift, and the control device can control the base driving assembly to drive the base 200 to drive the wafer to rotate a preset angle between each two adjacent semiconductor processes, so that the wafer can be subjected to multiple semiconductor processes in different directions. After each film of a certain thickness is deposited (or a certain depth is etched), the wafer is rotated by a preset angle and the film is deposited (or etched) again. Even if the direction of the air outlet of the air inlet device of the semiconductor process chamber is limited, the uniformity of the film deposited (or etched) on the wafer surface can be guaranteed, thereby ensuring the yield of the wafer product.

[0081] As an optional implementation of the present application, the semiconductor process may be an atomic layer deposition (ALD) process.

[0082] To further ensure the uniformity of the thin film deposited on the wafer surface, as a preferred embodiment of the present application, the control device is specifically used to:

[0083] The semiconductor process chamber is controlled to perform N steps of semiconductor process on the wafer located on the base 200, and the base driving component is controlled to drive the base 200 to drive the wafer to rotate a preset angle between each two adjacent semiconductor processes. The preset angle is equal to 360° / N, where N is an integer greater than or equal to 2.

[0084] In an embodiment of the present application, the preset angle is equal to 360° divided by the total number of semiconductor processes performed, so that the rotation angle of the base 200 and the wafer carried thereon between each two adjacent semiconductor processes remains consistent, further ensuring the uniformity of the thin film deposited on the wafer surface and improving the wafer product yield.

[0085] As an optional embodiment of the present application, the preset angle is 120°. That is, after the first semiconductor process, the rotating device 400 is controlled to rotate the base 200 and the wafer 120°, and then the second semiconductor process is performed. After the process is completed, the rotating device 400 is controlled to rotate the base 200 and the wafer 120° again, and then the third semiconductor process is performed.

[0086] As an optional embodiment of the present application, the semiconductor process chamber further includes an air intake system for delivering gas used for semiconductor processing to the cavity 100 , and the air intake system can diffuse the gas from one side of the base 200 to the other side above the base 200 .

[0087] As a preferred embodiment of the present application, Figures 5 to 7As shown, the top of the chamber body 100 has a reaction chamber 110, and the bottom of the reaction chamber 110 has a process opening. The air intake system includes an air intake device 120, which is arranged at the top of the reaction chamber 110. An air intake passage 121 is formed in the air intake device 120. One end of the air intake passage 121 is used to be connected to a process gas source, and the other end of the air intake passage 121 forms an air inlet on the side of the air intake device 120. The base 200 can be raised to the process position and contact with the bottom of the reaction chamber 110 to seal the process opening.

[0088] In one embodiment, if Figures 5 to 7 As shown, the air intake device 120 may include a fan-shaped flow uniformity cover plate 122 and a fan-shaped flow uniformity disk 123 , and an air intake passage 121 is formed between the fan-shaped flow uniformity cover plate 122 and the fan-shaped flow uniformity disk 123 .

[0089] The control device is specifically used to: control the base driving component to drive the base 200 to rise to the process position, and control the semiconductor process chamber to perform semiconductor processing on the wafer located on the base 200; control the base driving component to drive the base 200 to descend below the process position, and control the base driving component to drive the base 200 to drive the wafer to rotate a preset angle.

[0090] Specifically, first Figure 5 As shown, the susceptor 200 is located at the wafer transfer position, the distance between the top surface of the susceptor 200 and the bottom of the reaction chamber 110 is H1, and the wafer is transferred into the chamber 100 and lands on the susceptor 200.

[0091] Then, if Figure 6 As shown, the control device controls the base drive assembly to drive the base 200 to the process position, and the gas inlet device 120 introduces process gas into the reaction chamber 110 (the gas flow direction is shown by the arrow in the figure). At this time, the base 200 seals the process opening at the bottom of the reaction chamber 110, which can prevent the process gas from escaping from the reaction chamber 110.

[0092] After each semiconductor process step is completed, Figure 7 As shown, the control device controls the base driving assembly to drive the base 200 to descend to the rotation position below the process position, and the distance between the top surface of the base 200 and the bottom of the reaction chamber 110 is H2. Then the control device controls the base driving assembly to drive the base 200 to rotate a preset angle.

[0093] As an optional implementation of the present application, the film transmission position is lower than the rotation position, that is, the distance H1 is greater than the distance H2.

[0094] As an optional implementation of this application, Figure 1As shown, the base drive assembly includes a lifting device 300 and a rotating device 400. The rotating device 400 includes a rotating seat 410, a core shaft 420 and a rotating drive module. A matching hole is formed in the rotating seat 410. The core shaft 420 is arranged in the matching hole and can rotate around its own axis in the matching hole. The top end of the core shaft 420 is used to be fixedly connected to the base 200. The rotating drive module is used to drive the core shaft 420 to drive the base 200 to rotate a preset angle; the lifting device 300 is fixedly set at the bottom of the cavity 100, and is used to drive the rotating seat 410 to drive the core shaft 420 and the base 200 to rise or fall.

[0095] In the present application, the base drive assembly includes a lifting device 300 and a rotating device 400. The rotating device 400 includes a rotating base 410, a core shaft 420 and a rotating drive module. The core shaft 420 is fixedly connected to the base 200 and can rotate in the rotating base 410. The rotating drive module can drive the core shaft 420 to drive the base 200 to rotate a preset angle between each two adjacent semiconductor processes, so that the wafer can be subjected to multiple semiconductor processes in different directions. After each film of a certain thickness is deposited, the wafer is rotated by a preset angle and the film is deposited again. Even if the direction of the air outlet of the semiconductor process chamber air inlet device is limited, the uniformity of the film deposited on the wafer surface can be guaranteed, thereby ensuring the yield of the wafer product.

[0096] As an optional embodiment of the present application, a magnetic fluid seal is formed between the inner wall of the mating hole and the outer surface of the core shaft 420. That is, at least one of the rotating base 410 and the core shaft 420 is a magnet, and the space between the inner wall of the mating hole and the outer surface of the core shaft 420 is filled with magnetic fluid. This magnetic field confines the magnetic fluid between the inner wall of the mating hole and the core shaft 420, sealing the gap between them and ensuring the airtightness of the semiconductor process chamber.

[0097] As an optional implementation of this application, Figure 1 、 Figure 2 As shown, the base 200 includes a carrier plate 210 and a lifting shaft 220 fixedly connected to the bottom of the carrier plate 210 , and the bottom end of the lifting shaft 220 passes through a through hole on the bottom wall of the cavity 100 to the outside of the cavity 100 .

[0098] In order to ensure the airtightness of the semiconductor process chamber, as an optional embodiment of the present application, Figure 1 As shown, the rotating device 400 also includes a bellows 430, the top end of the bellows 430 is used to be fixedly connected to the bottom of the cavity 100 and seal the through hole, the bottom end of the bellows 430 is sealed and connected to the top of the rotating seat 410, the top end of the core shaft 420 enters the bellows 430, and the top end of the core shaft 420 is fixedly connected to the bottom end of the lifting shaft 220.

[0099] In order to further ensure the airtightness of the semiconductor process chamber, as an optional embodiment of the present application, Figure 1 As shown, the top end surface of the core shaft 420 and the bottom end surface of the lifting shaft 220 are sealed and docked via a docking sealing ring 221.

[0100] As an optional implementation of this application, Figure 1 As shown, the lifting device 300 includes a lifting guide rail 310, a lifting support 320 and a lifting drive module. The lifting guide rail 310 is fixedly connected to the cavity 100, the lifting support 320 is movably arranged on the lifting guide rail 310, and the rotating seat 410 is fixedly connected to the lifting support 320. The lifting drive module is used to drive the lifting support 320 to move up and down along the lifting guide rail 310 to drive the rotating device 400 and the base 200 to move up and down.

[0101] As an optional implementation of this application, Figure 1 As shown, the lifting support 320 includes a vertical portion 321 and a horizontal portion 322. The vertical portion 321 extends in the vertical direction, and the horizontal portion 322 extends in the horizontal direction. The vertical portion 321 and the horizontal portion 322 are fixedly connected, and the vertical portion is movably arranged on the lifting guide rail 310.

[0102] A first avoidance hole is formed in the horizontal portion 322 and passes through the horizontal portion 322 in the vertical direction. The rotating device 400 also includes a mounting plate 440. A avoidance groove is formed at the top of the mounting plate 440, and a second avoidance hole is formed at the bottom of the avoidance groove and passes through the bottom of the mounting plate 440. The mounting plate 440 is fixedly set at the bottom of the horizontal portion 322, and the bottom end of the rotating seat 410 passes through the first avoidance hole and is fixedly set in the avoidance groove. The bottom end of the core shaft 420 passes through the second avoidance hole to the bottom of the mounting plate 440.

[0103] As an optional implementation of this application, Figure 1 、 Figure 4 As shown, the bottom end of the bellows 430 has a bottom sealing flange 431. That is, the bottom end of the bellows 430 is assembled and connected with the rotating base 410 through the bottom sealing flange 431.

[0104] In order to ensure the service life of the base drive assembly and further ensure the airtightness of the semiconductor process chamber, as a preferred embodiment of the present application, Figure 4 As shown, a blowing channel 432 is formed inside the bottom sealing flange 431, one end of the blowing channel 432 is connected to the inner wall of the bottom sealing flange 431, and the other end of the blowing channel 432 extends to the outer surface of the bottom sealing flange 431 and forms an air inlet, which is used to connect to a preset gas source to provide a preset protective gas to the bellows 430.

[0105] Taking into account that some process gases used in the atomic layer deposition process are corrosive to a certain extent, in order to prevent process gases or reaction products from escaping downward along the bellows and contacting mechanical moving parts, a blowing channel 432 is formed inside the bottom sealing flange 431 in the embodiment of the present application, and the air inlet is used to connect to a preset gas source to provide a preset protective gas to the bellows 430, thereby preventing corrosive gases from diffusing to the sealing surface, protecting structures such as the bottom sealing flange 431 and the rotating seat 410, and further ensuring the reliability of the seal.

[0106] As an optional embodiment of the present application, the preset protective gas may be nitrogen (N2).

[0107] In order to further ensure the airtightness of the semiconductor process chamber, as an optional embodiment of the present application, Figure 1 、 Figure 4 As shown, the top surface of the rotating seat 410 and the bottom surface of the bottom sealing flange 431 are sealed and connected via a rotating seat sealing ring 411 .

[0108] As an optional embodiment of the present application, the susceptor 200 is also used to heat the wafer, and a thermocouple for detecting the temperature of the susceptor 200 is provided in the susceptor 200 .

[0109] In order to facilitate the monitoring of the temperature of the base 200 to prevent the base 200 from being too high or too low in temperature and affecting the semiconductor process, as an optional embodiment of the present application, an electronic device is provided in the base 200, and a first wiring hole coaxial with the core shaft 420 is formed inside the core shaft 420, such as Figure 3 As shown, the rotating device 400 further includes a cable tray 450 and a rotating slip ring 460. The top of the cable tray 450 is fixedly connected to the core shaft 420, the bottom of the cable tray 450 is fixedly connected to the rotating portion 462 of the rotating slip ring 460, the fixed portion 461 of the rotating slip ring 460 is fixedly connected to the rotating base 410, and the rotating slip ring 460 has a cable interface.

[0110] The electronic device is electrically connected to the cable interface via the cable 230;

[0111] The cable 230 passes through the first wiring hole and is electrically connected to the cable interface through the wiring bridge 450.

[0112] It should be noted that the electronic device refers to various sensors (such as thermocouples), power supplies and other devices arranged in the base 200. In the embodiment of the present application, the cable 230 of the electronic device in the base 200 is connected to the rotating part 462 of the rotating slip ring 460 through the wiring bridge 450, so that when the base 200 rotates, the cable 230 of the electronic device, the wiring bridge 450 and the rotating part 462 of the rotating slip ring 460 can rotate together. While avoiding twisting of the cable 230, the rotating slip ring 460 maintains a stable connection state between the cable 230 and the electronic device, thereby achieving reliable extraction of the cable connected to the electronic device in the base 200 in a rotating state. This structure is easy to maintain and has strong operability, thereby improving the overall maintenance performance of the semiconductor process chamber.

[0113] Illustratively, the electronic device in the present application may be a thermocouple and a power supply, the power supply is used to provide electrical energy for heating the susceptor, and the thermocouple can be used to detect the temperature of the susceptor.

[0114] As an optional embodiment of the present application, a second wiring hole coaxial with the lifting shaft 220 is formed inside the lifting shaft 220, and the cable 230 of the electronic device passes through the second wiring hole to enter the first wiring hole.

[0115] As an optional implementation of this application, Figure 3 As shown, the cable tray 450 includes a housing 451, a cable inlet plug 452, and a cable outlet plug 453. Both the cable inlet plug 452 and the cable outlet plug 453 are disposed within the housing 451. Connecting wiring is provided on the inner wall of the housing 451. The cable outlet plug 453 communicates with a cable interface on the rotating portion 462 via the connecting wiring. The cable inlet plug 452 is connected to the cable 230 of the electronic device, and the cable outlet plug 453 is connected to the cable inlet plug 452. Thus, the cable 230 of the electronic device can be connected to an external fixed cable via the cable interface.

[0116] As an optional implementation of this application, Figure 3 As shown, the rotating device 400 also includes a fixed plate 470 and a plurality of connecting columns 480, and the top of the fixed part 461 of the rotating slip ring 460 is fixedly connected to the fixed plate 470; the plurality of connecting columns 480 are arranged vertically and parallel, the top end of the connecting column 480 is fixedly connected to the rotating seat 410 (specifically, fixedly connected to the rotating seat 410 through the mounting plate 440), and the bottom end of the connecting column 480 is fixedly connected to the fixed plate 470 to fix the fixed part 461 of the rotating slip ring 460 to the rotating seat 410.

[0117] As an optional embodiment of the present application, the rotating device 400 includes three connecting columns 480 .

[0118] In order to ensure the accuracy of the wafer rotation position, as a preferred embodiment of the present application, Figure 1 As shown, the base drive assembly further includes a zero position detection module 510 and a trigger member 520. The zero position detection module 510 is fixedly connected to the rotating base 410. The zero position detection module 510 is used to detect the rotation angle of the base 200.

[0119] The trigger member 520 is fixedly set on the core shaft 420, and the height of the trigger member 520 corresponds to the height of the zero position detection module 510. The trigger member 520 is used to trigger the zero position detection module 510 to detect the rotation angle of the base 200 when it rotates to the corresponding direction of the zero position detection module 510 along with the core shaft 420.

[0120] In an embodiment of the present application, the base drive assembly also includes a zero position detection module 510 and a trigger member 520. The trigger member 520 can trigger the zero position detection module 510 when it rotates to the direction corresponding to the zero position detection module 510 to detect the rotation angle of the base 200, thereby realizing the determination of the rotation zero position of the base 200. Through this reference, the base 200 can be rotated at a fixed angle and the rotation signal can be fed back to the control system (control device), thereby improving the accuracy of the wafer rotation position.

[0121] As an optional implementation of this application, Figure 1 As shown, the zero position detection module 510 is fixedly arranged on the mounting plate 440 .

[0122] As an optional embodiment of the present application, the zero position detection module 510 includes a light emitting element and a photoelectric sensor. The light emitting element is used to emit detection light toward the photoelectric sensor in a vertical direction. The trigger element 520 can be blocked between the light emitting element and the photoelectric sensor when rotated to the corresponding direction to trigger the zero position detection module 510.

[0123] As an optional embodiment of the present application, the rotation drive module includes a driving part, a transmission belt and a pulley 490. The pulley 490 is mounted on the core shaft 420 and is coaxial with the core shaft 420. The driving part is connected to the pulley 490 through a transmission belt and is used to drive the pulley 490 to drive the core shaft 420 to rotate through the transmission belt.

[0124] In the semiconductor process, the base 200 can generally be heated to 300°C to 350°C. The inventors have experimentally verified that the temperature at the connection point between the rotating base 410 and the bellows 430 can generally reach 90°C to 100°C. In order to ensure the reliability of the rotary seal between the rotating base 410 and the core shaft 420, as a preferred embodiment of the present application, Figure 4As shown, a cooling passage is formed inside the rotating seat 410, and a liquid inlet 412 and a liquid outlet 413 are formed at the two ends of the cooling passage on the surface of the rotating seat 410 respectively. The liquid inlet 412 and the liquid outlet 413 are used to connect to a cold source to allow coolant to flow into the cooling passage.

[0125] In the embodiment of the present application, a cooling passage is formed inside the rotating seat 410, and the liquid inlet 412 and the liquid outlet 413 of the cooling passage are used to connect to a cold source so that the heat at the rotating seat 410 can be taken away by the coolant circulating in the cooling passage, thereby improving the temperature stability of the rotating seat 410 and its nearby parts, thereby ensuring the reliability of the rotary seal between the rotating seat 410 and the core shaft 420.

[0126] As an optional implementation of the present application, the preset gas source may be a nitrogen source.

[0127] As a second aspect of the present application, a semiconductor processing method is provided. The semiconductor processing method is implemented by the semiconductor processing chamber provided in an embodiment of the present application, and the method includes:

[0128] The semiconductor process chamber is controlled to perform multiple semiconductor processes on the wafer on the susceptor 200 , and the susceptor 200 is controlled to drive the wafer to rotate by a preset angle between each two adjacent semiconductor processes.

[0129] The semiconductor process method provided in the present application controls the base driving component to drive the base 200 to drive the wafer to rotate at a preset angle between each two adjacent semiconductor processes, so that the wafer can undergo multiple semiconductor processes in different directions. After each film of a certain thickness is deposited (or a certain depth is etched), the wafer is rotated at a preset angle and the film is deposited (or etched) again. Even if the direction of the air outlet of the air inlet device of the semiconductor process chamber is limited, the uniformity of the film deposited (or etched) on the wafer surface can be guaranteed, thereby ensuring the yield of the wafer product.

[0130] To further ensure the uniformity of the thin film deposited on the wafer surface, as a preferred embodiment of the present application, the preset angle is equal to 360° / N, where N is an integer greater than or equal to 2;

[0131] Controlling the semiconductor process chamber to perform a multi-step semiconductor process on the wafer on the susceptor 200 specifically includes:

[0132] The semiconductor process chamber is controlled to perform N steps of semiconductor processes on the wafer on the susceptor 200 .

[0133] As an optional implementation of the present application, the semiconductor process may be an atomic layer deposition process.

[0134] In an embodiment of the present application, the preset angle is equal to 360° divided by the total number of semiconductor processes performed, so that the rotation angle of the base 200 and the wafer carried thereon between each two adjacent semiconductor processes remains consistent, further ensuring the uniformity of the thin film deposited on the wafer surface and improving the wafer product yield.

[0135] As an optional embodiment of the present application, the preset angle is 120°. That is, after the first semiconductor process, the rotation device 400 is controlled to rotate the base 200 and the wafer 120°, and then the second semiconductor process is performed. After the process is completed, the rotation device 400 is controlled to rotate the base 200 and the wafer 120° again to perform the third semiconductor process. In other words, three semiconductor processes are performed respectively with the wafer facing three different directions.

[0136] In order to ensure the accuracy of the wafer rotation position, as a preferred embodiment of the present application, Figure 1 As shown, the base drive assembly further includes a zero position detection module 510 and a trigger member 520. The zero position detection module 510 is fixedly connected to the rotating base 410. The trigger member 520 is fixedly arranged on the surface of the core shaft 420, and the height of the trigger member 520 corresponds to the height of the zero position detection module 510. The trigger member 520 can trigger the zero position detection module 510 when it rotates to the direction corresponding to the zero position detection module 510. The method further includes the following steps before performing the semiconductor process for the first time:

[0137] The lifting device 300 is controlled to drive the rotating device 400 to lift the base 200 and the wafer carried thereon to a rotation position, and the rotating device 400 is controlled to drive the base 200 and the wafer carried thereon to rotate to trigger the zero position detection module 510 .

[0138] In the embodiment of the present application, the base drive assembly further includes a zero position detection module 510 and a trigger 520. The trigger 520 can trigger the zero position detection module 510 when rotating to a direction corresponding to the zero position detection module 510, thereby detecting the rotation angle of the base 200. The semiconductor processing method further includes controlling the rotation device 400 to drive the base 200 to rotate until the zero position detection module 510 is triggered before the first semiconductor process is performed, thereby calibrating the base 200 to a zero rotation position and improving the accuracy of the wafer rotation position.

[0139] like Figure 8 As shown, for the convenience of technical personnel to understand, the following provides a specific embodiment of using the semiconductor process chamber provided by the present application to perform a semiconductor process:

[0140] In step S1, the susceptor 200 is located at the wafer transfer position, and a wafer is transferred onto the susceptor 200. Specifically, the wafer can be transferred into the chamber 100 by a vacuum robot and placed on the susceptor 200.

[0141] Step S2 : Control the base driving assembly to drive the base 200 to rise to the rotation position, and rotate until the trigger member 520 triggers the zero position detection module 510 to determine the rotation zero position.

[0142] Step S3: Control the pedestal driving assembly to drive the pedestal 200 to the process position, and control the semiconductor process chamber to perform the first semiconductor process on the wafer on the pedestal 200;

[0143] Step S4: Control the base driving assembly to drive the base 200 to descend to the rotation position and rotate 120° clockwise.

[0144] Step S5 , controlling the pedestal driving assembly to drive the pedestal 200 to rise to the process position, and controlling the semiconductor process chamber to perform the second semiconductor process on the wafer on the pedestal 200 .

[0145] Step S6: Control the base driving assembly to drive the base 200 to descend to the rotation position and rotate 120° clockwise.

[0146] Step S7 , controlling the pedestal driving assembly to drive the pedestal 200 to rise to the process position, and controlling the semiconductor process chamber to perform the third semiconductor process on the wafer on the pedestal 200 .

[0147] The bottom end of the bellows 430 has a bottom sealing flange 431, and a blowing channel 432 is formed inside the bottom sealing flange 431. One end of the blowing channel 432 is connected to the inner wall of the bottom sealing flange 431, and the other end of the blowing channel 432 extends to the outer surface of the bottom sealing flange 431 and forms an air inlet. The semiconductor process chamber also includes a preset gas source and a connecting pipe 600, and the preset gas source is connected to the air inlet through the connecting pipe 600. The method further includes:

[0148] The preset gas source is controlled to introduce the preset protective gas into the connecting pipe 600 .

[0149] In an embodiment of the present application, a blowing channel 432 is formed inside the bottom sealing flange 431, and the semiconductor process method also includes controlling a preset gas source to introduce a preset protective gas into the connecting tube 600, thereby providing a preset protective gas into the bellows 430 to prevent corrosive gas from diffusing to the sealing surface, protecting the bottom sealing flange 431 and the rotating seat 410 and other structures, and further ensuring the reliability of the seal.

[0150] As an optional implementation of the present application, the preset protective gas is nitrogen.

[0151] As an optional embodiment of the present application, the pressure of the preset protective gas introduced into the connecting pipe 600 by the preset gas source is 30 to 60 psi.

[0152] It is understood that the above embodiments are merely exemplary embodiments for illustrating the principles of the present application, and the present application is not limited thereto. Those skilled in the art may make various modifications and improvements without departing from the spirit and substance of the present application, and such modifications and improvements are also considered to be within the scope of protection of the present application.

Claims

1. A semiconductor process chamber, comprising a cavity and a base disposed in the cavity, wherein the base is used to support a wafer, characterized in that: The base is provided with electronic components, and the semiconductor process chamber further comprises a control device and a base drive assembly; The base drive assembly is fixedly connected to the base, and the base drive assembly is used to drive the base to rotate and rise or fall; The base drive assembly includes a rotating device; The rotating device includes a rotating seat, a core shaft, a rotating drive module, a wiring bridge and a rotating slip ring. A matching hole is formed in the rotating seat, the core shaft is arranged in the matching hole and can rotate around its own axis in the matching hole, the top end of the core shaft is used to be fixedly connected to the base, and the rotating drive module is used to drive the core shaft to drive the base to rotate; a first wiring hole coaxial with the core shaft is formed inside the core shaft; The rotating slip ring includes a fixed part and a rotating part; the top of the wiring bridge is fixedly connected to the core shaft, the bottom of the wiring bridge is fixedly connected to the rotating part of the rotating slip ring, the fixed part of the rotating slip ring is fixedly connected to the rotating seat, and the rotating slip ring has a cable interface; The electronic device is electrically connected to the cable interface via a cable; The cable passes through the first wiring hole and is electrically connected to the cable interface through the wiring bridge; The control device is used to control the semiconductor process chamber to perform multiple semiconductor processes on the wafer located on the base, and to control the base drive component to drive the base to rotate the wafer by a preset angle between each two adjacent semiconductor processes.

2. The semiconductor process chamber according to claim 1, wherein: The control device is specifically used for: The semiconductor process chamber is controlled to perform N steps of semiconductor process on the wafer located on the base, and between each two adjacent steps of the semiconductor process, the base drive component is controlled to drive the base to drive the wafer to rotate a preset angle, wherein the preset angle is equal to 360° / N, and N is an integer greater than or equal to 2.

3. The semiconductor process chamber according to claim 1, wherein: The control device is specifically used for: Controlling the susceptor driving assembly to drive the susceptor to rise to a process position, and controlling the semiconductor process chamber to perform a semiconductor process on a wafer located on the susceptor; The base driving assembly is controlled to drive the base to descend below the process position, and the base driving assembly is controlled to drive the base to drive the wafer to rotate by the preset angle.

4. The semiconductor process chamber according to any one of claims 1 to 3, wherein: The base drive assembly includes a lifting device; The lifting device is fixedly arranged at the bottom of the cavity and is used to drive the rotating seat to drive the core shaft and the base to rise or fall.

5. The semiconductor process chamber according to claim 4, wherein: The base drive assembly also includes a zero position detection module and a trigger; The zero position detection module is fixedly connected to the rotating base, and the zero position detection module is used to detect the rotation angle of the base; The trigger member is fixedly arranged on the core shaft, and the height of the trigger member corresponds to the height of the zero position detection module. The trigger member is used to trigger the zero position detection module to detect the rotation angle of the base when the core shaft rotates to the corresponding direction of the zero position detection module.

6. The semiconductor process chamber according to claim 1, wherein: The rotating device also includes a fixing plate and a plurality of connecting columns; The top of the fixed portion of the rotating slip ring is fixedly connected to the fixed plate; A plurality of connecting columns are arranged vertically and in parallel, the top ends of the connecting columns are fixedly connected to the rotating seat, and the bottom ends of the connecting columns are fixedly connected to the fixing plate.

7. The semiconductor process chamber according to claim 1, wherein: The inner wall of the matching hole and the outer surface of the core shaft are sealed by magnetic fluid.

8. The semiconductor process chamber according to claim 4, wherein: The base includes a carrying plate and a lifting shaft fixedly connected to the bottom of the carrying plate, and the bottom end of the lifting shaft passes through the through hole on the bottom wall of the cavity to the outside of the cavity; The rotating device also includes a bellows, the top end of the bellows is used to be fixedly connected to the bottom of the cavity and seal the through hole, the bottom end of the bellows is sealed and connected to the top of the rotating seat, the top end of the core shaft enters the bellows, and the top end of the core shaft is fixedly connected to the bottom end of the lifting shaft.

9. The semiconductor process chamber according to claim 8, wherein: The bottom end of the bellows has a bottom sealing flange, and a blowing channel is formed inside the bottom sealing flange. One end of the blowing channel is connected to the inner wall of the bottom sealing flange, and the other end of the blowing channel extends to the outer surface of the bottom sealing flange and forms an air inlet. The air inlet is used to be connected to a preset gas source to provide a preset protective gas to the bellows.

10. The semiconductor process chamber according to claim 8, wherein: The bottom end of the bellows has a bottom sealing flange, and an air blowing channel is formed inside the bottom sealing flange. One end of the air blowing channel is communicated with the inner wall of the bottom sealing flange, and the other end of the air blowing channel extends to the outer surface of the bottom sealing flange and forms an air inlet. The semiconductor process chamber further includes a preset gas source and a connecting pipe. The preset gas source is connected to the gas inlet through the connecting pipe. The preset gas source is used to provide a preset protective gas to the bellows.

11. The semiconductor process chamber according to claim 1, wherein: A cooling passage is formed inside the rotating seat, and a liquid inlet and a liquid outlet are formed at both ends of the cooling passage on the surface of the rotating seat respectively. The liquid inlet and the liquid outlet are used to be connected to a cold source to allow coolant to flow into the cooling passage.

12. The semiconductor process chamber according to any one of claims 1 to 3, wherein: Also includes: Air intake system; The gas inlet system is used to transport gas used for the semiconductor process into the chamber, and the gas inlet system allows the gas to diffuse from one side of the susceptor to the other side above the susceptor.

13. A semiconductor process method, characterized in that: Applied to a semiconductor process chamber as described in any one of claims 1 to 12, the method includes: controlling the semiconductor process chamber to perform a multi-step semiconductor process on a wafer located on a base, and controlling the base to drive the wafer to rotate a preset angle between each two adjacent semiconductor processes.

14. The semiconductor process method according to claim 13, wherein: The preset angle is equal to 360° / N, where N is an integer greater than or equal to 2; The control semiconductor process chamber performs a multi-step semiconductor process on a wafer on a susceptor, including: The semiconductor process chamber is controlled to perform N steps of semiconductor process on the wafer on the susceptor.

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