A temperature calibration method for a temperature measuring device of a semiconductor device

Abstract

This invention relates to a temperature calibration method for a temperature measuring device used in semiconductor equipment, comprising the following steps: S1, providing a semiconductor equipment; S2, obtaining the correspondence between epitaxial layer growth rate and temperature; S3, preliminary power calibration; S4, performing epitaxial layer growth at a first process temperature T1 to obtain a first growth rate K1, and obtaining a first actual temperature t1 corresponding to the first growth rate K1 according to the correspondence described in step S2, and obtaining the temperature difference ΔT1 between the first actual temperature t1 and the first process temperature T1; S5, taking an nth process temperature T near the first process temperature. n Obtain the nth actual temperature t n With the nth process temperature T n Temperature difference ΔT n S6. Repeat step S5 to obtain the average temperature difference to calibrate the various process temperatures T of the first thermometer. N S7. Repeat steps S4-S6 until ΔT is less than the set threshold. This invention has advantages such as high calibration accuracy and strong operability.

Description

Technical Field

[0001] This invention relates to the field of semiconductor equipment, and in particular to a temperature calibration method for a temperature measuring device used in semiconductor equipment. Background Technology

[0002] In semiconductor chip manufacturing, numerous micro-fabrication processes are required, with vapor deposition being a common method for epitaxial growth on semiconductor substrates. During this process, the temperature of the upper surface of the semiconductor substrate needs to be monitored to ensure that the process temperature meets the requirements for epitaxial growth. The semiconductor substrate can also be referred to as a wafer. Currently, temperature measurement devices in semiconductor equipment typically include two temperature sensors (usually infrared thermometers) to monitor temperature changes on the upper surface of the wafer and the lower surface of the substrate during epitaxial growth. However, the lifespan of these temperature sensors is limited, especially the upper temperature sensor (hereinafter referred to as the first temperature sensor). After a period of operation, the upper temperature sensor needs to be replaced to ensure its continued proper functioning.

[0003] To ensure the accuracy of temperature monitoring by the replaced upper temperature sensor, the existing method for calibrating the upper temperature sensor uses the unreplaced lower temperature sensor as a reference. However, this method has certain drawbacks, specifically a large calibration error, leading to significant measurement errors in the replaced upper temperature sensor. Therefore, there is an urgent need for a temperature calibration method capable of calibrating temperature measuring devices to improve the accuracy of temperature monitoring in semiconductor equipment, thereby enhancing the uniformity of wafer epitaxial layer growth. Summary of the Invention

[0004] The purpose of this invention is to provide a temperature calibration method for a temperature measuring device for semiconductor equipment, which solves the problem of accurately calibrating the upper temperature measuring instrument (hereinafter referred to as the first temperature measuring instrument).

[0005] To achieve the above objectives, the present invention provides a temperature calibration method for a temperature measuring device for semiconductor equipment, comprising:

[0006] S1. A semiconductor device is provided, the semiconductor device comprising: a cavity, the cavity including a base for supporting a substrate; upper and lower heating devices for providing thermal radiation to the cavity, and adjusting the temperature inside the cavity by adjusting the power of the upper and lower heating devices; and a temperature measuring device, the temperature measuring device including a first temperature measuring instrument disposed above the cavity and a second temperature measuring instrument disposed below the cavity;

[0007] S2. Obtain the relationship between epitaxial layer growth rate and temperature;

[0008] S3. Preliminary power calibration: Calibrate the replaced first temperature measuring instrument by setting the measurement temperature corresponding to the power.

[0009] S4. Perform epitaxial layer growth at the first process temperature T1 to obtain the first growth rate K1, and obtain the first actual temperature t1 corresponding to the first growth rate K1 according to the correspondence described in step S2, and obtain the temperature difference ΔT1 between the first actual temperature t1 and the first process temperature T1.

[0010] S5. Take the nth process temperature T near the first process temperature. n At the nth process temperature T n Epitaxial layer growth is performed below to obtain the nth growth rate K. n And obtain the nth growth rate K according to the correspondence described in step S2. n The corresponding nth actual temperature t n Obtain the nth actual temperature t n With the nth process temperature T n Temperature difference ΔT n , where n = 2, 3, 4...N, N ≥ 2, and is an integer;

[0011] S6. Repeat step S5 to obtain the temperature differences ΔT1, ΔT2, ..., ΔT N average by After calibration and replacement, the first process temperature T1, the second process temperature T2, ..., the Nth process temperature T of the first temperature measuring instrument are... N ;

[0012] S7. Repeat steps S4-S6, when... Stop when the value is below the set threshold.

[0013] Preferably, the set threshold is 0.95°C.

[0014] Preferably, in step S3, the preliminary power calibration specifically involves: providing corresponding first and second set powers to the upper and lower heating devices respectively, obtaining the first and second measured temperatures of the first and second thermometers under the corresponding set powers respectively, replacing the first thermometer, providing corresponding first and second set powers to the upper and lower heating devices respectively, and calibrating the replaced first thermometer with the corresponding first measured temperature.

[0015] Preferably, in step S2, the relationship between the epitaxial layer growth rate and temperature is obtained by: introducing process gas into the cavity to grow an epitaxial layer on the substrate, calculating the epitaxial layer growth rate at different temperature points within the linear temperature range, and obtaining the relationship between the epitaxial layer growth rate and temperature.

[0016] Preferably, the first process temperature T1, the second process temperature T2, ..., the Nth process temperature T N This is the temperature measured by the first thermometer.

[0017] Preferably, in step S4, epitaxial layer growth is performed at the first process temperature T1, which is the first measurement temperature.

[0018] Preferably, in step S4, after obtaining the temperature difference ΔT1, the replacement first thermometer is calibrated with the first actual temperature t1.

[0019] Preferably, the first process temperature T1, the second process temperature T2, ..., the Nth process temperature T N For any temperature point within the linear temperature range.

[0020] Preferably, the relationship between the epitaxial layer growth rate and temperature is such that the natural logarithm of the epitaxial layer growth rate and the reciprocal of the corresponding temperature are linearly related.

[0021] Preferably, the expression for the correspondence is:

[0022]

[0023] Where K is the epitaxial layer growth rate, R is the molar gas constant, and E is the epitaxial layer growth rate. a Let C be the reaction activation energy, C be a constant, and t be the temperature. Substituting different temperatures t and the corresponding epitaxial layer growth rate K within the linear temperature range into the expression, we obtain the expression for the corresponding relationship.

[0024] Preferably, N = 5 or 6.

[0025] Preferably, the difference between the percentage of the first set power and the percentage of the second set power is less than 10%.

[0026] Preferably, the difference between the first and second measured temperatures is less than 10°C.

[0027] Preferably, the process gas for growing the epitaxial layer includes one or more of SiH4, SiHCl3, SiH2Cl2, and SiCl4.

[0028] Preferably, the linear temperature range is 500℃-850℃.

[0029] Preferably, the set power ranges from 14kW to 50kW.

[0030] In summary, compared with the prior art, the temperature calibration method for a temperature measuring device for semiconductor equipment provided by the present invention has the following beneficial effects:

[0031] (1) Through the preliminary power calibration described in step S3, the replaced temperature measuring device can be quickly and initially calibrated using the set power, thereby reducing the measurement error of the replaced temperature measuring device and enabling subsequent accurate calibration.

[0032] (2) Based on the linear relationship between the natural logarithm of the epitaxial growth rate and the reciprocal of the corresponding temperature, the average value of the temperature difference between the actual temperature and the process temperature is calculated through steps S4 to S6. The average value of this temperature difference is used to accurately calibrate the temperature measuring device after preliminary calibration, so that the temperature measuring performance of the replaced temperature measuring device is more accurate and the overall deviation of the replaced temperature measuring device is adjusted.

[0033] (3) The replacement first thermometer is calibrated with the first actual temperature t1, which reduces the measurement error of the replacement first thermometer and improves its accuracy when performing subsequent temperature calibration measurements. Attached Figure Description

[0034] Figure 1 This is a schematic diagram of the structure of a semiconductor device provided in an embodiment of the present invention;

[0035] Figure 2 A flowchart illustrating a temperature calibration method for a temperature measuring device for semiconductor equipment provided in an embodiment of the present invention;

[0036] Figure 3 This is a schematic diagram illustrating the linear relationship between the reciprocal of temperature and the growth rate, provided for an embodiment of the present invention. Detailed Implementation

[0037] The following will be combined with the appendix in the embodiments of the present invention. Figure 1 ~Attached Figure 3 The technical solutions, structural features, objectives and effects achieved in the embodiments of the present invention will be described in detail.

[0038] It should be noted that the accompanying drawings are in a very simplified form and use non-precise proportions. They are only used to facilitate and clarify the purpose of illustrating the embodiments of the present invention, and are not intended to limit the implementation conditions of the present invention. Therefore, they have no substantial technical significance. Any modifications to the structure, changes in the proportional relationship, or adjustments to the size should still fall within the scope of the technical content disclosed in the present invention, provided that they do not affect the effects and objectives that the present invention can produce.

[0039] It should be noted that, in this invention, relational terms such as "first" and "second" are used merely to distinguish one entity or operation from another, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Furthermore, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only the expressly listed elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or apparatus.

[0040] To improve the temperature measurement accuracy of replaced temperature measuring devices in semiconductor equipment, this invention provides a temperature calibration method for temperature measuring devices in semiconductor equipment, based on, for example... Figure 1 The semiconductor device shown is implemented as follows. Optionally, the semiconductor device is an epitaxial device, which includes a cavity 100 formed by a sidewall, an upper dome 101, and a lower dome 102 sealed together. A base 105 for supporting a substrate W is provided at the bottom of the cavity 100. A rotating support shaft 106 is connected to the bottom of the base 105. By rotating and raising / lowering the rotating support shaft 106, the base 105 and the substrate W placed on the base 105 are driven to rotate and move up and down around the central axis of the rotating support shaft 106, making the epitaxial layer growth of the substrate W more uniform. An air inlet 103 is provided at one end of the cavity 100, and an exhaust port 104 is provided at the other end opposite to the air inlet 103. Furthermore, the top and bottom of the cavity 100 are respectively provided with upper and lower heating devices 107, which are used to provide thermal radiation to the cavity 100 and radiate heat the process gas flowing in from the air inlet 103, so that the process gas decomposes and deposits on the substrate W to form an epitaxial layer. The temperature inside the cavity 100 can be adjusted by adjusting the power of the upper and lower heating devices 107.

[0041] To monitor the upper surface temperature of the substrate W and the lower surface temperature of the base 105 during epitaxial growth, temperature measuring devices are respectively provided above and below the cavity 100. These devices include a first temperature measuring instrument 108 located above the cavity and a second temperature measuring instrument 109 located below the cavity. The first temperature measuring instrument 108 has a limited lifespan; after the semiconductor equipment has been running for a period of time, the first temperature measuring instrument 108 needs to be replaced to ensure its normal operation. Furthermore, to ensure the accuracy of temperature measurement by the replaced first temperature measuring instrument 108, the temperature calibration method provided in this invention is used to calibrate the temperature of the replaced first temperature measuring instrument 108.

[0042] Specifically, refer to Figure 2 The temperature calibration method for this temperature measuring device includes the following steps:

[0043] S1. Provide the aforementioned semiconductor device, optionally, the semiconductor device is... Figure 1 The semiconductor device shown.

[0044] S2. Obtain the relationship between epitaxial layer growth rate and temperature; specifically: introduce process gas into cavity 100 to grow an epitaxial layer on substrate W, calculate the epitaxial layer growth rate at different temperature points within the linear temperature range, and obtain the relationship between epitaxial layer growth rate and temperature. Preferably, the linear temperature range is 500℃-850℃.

[0045] Optionally, the linear temperature is defined as follows: within this temperature range, the natural logarithm of the growth rate and the reciprocal of the corresponding temperature are linearly related, as will be described in detail below.

[0046] Specifically, for example, using a process temperature of 700℃ as the process condition, an epitaxial process is performed for 120s. After the epitaxial process is completed, the epitaxial thickness is measured as D1. Based on the above data, the growth rate at 700℃ can be obtained as D1 / 120s. Similarly, the corresponding growth rate can be obtained at different process temperatures, and finally the relationship between the epitaxial layer growth rate and the corresponding temperature can be obtained.

[0047] S3. Preliminary power calibration: calibrate the replaced first thermometer by setting the measurement temperature corresponding to the power; optionally, specifically: provide the upper and lower heating devices 107 with corresponding first set power P1 and second set power P2, respectively, and obtain the first measurement temperature T corresponding to the first thermometer 108 under the first set power P1. u1 The second measured temperature T corresponding to the second thermometer 109 under the second set power P2. d Then, the first thermometer 108 is replaced with the first thermometer 108', and the corresponding first set power P1 and second set power P2 are supplied to the upper and lower heating devices 107 respectively. After the process stabilizes, the corresponding first measured temperature T is used. u1 The replaced first temperature measuring instrument 108' is calibrated. For example, the first measured temperature of the upper surface of the substrate W measured using the replaced first temperature measuring instrument 108' at the first set power P1 is T. u1 ', and the first measured temperature T u1 'Greater or less than the first measured temperature T obtained before replacement' u1 (i.e., the first measured temperature T after replacement) u1 'Compared to the first measured temperature T before replacement u1 If a temperature difference exists, then the first measured temperature T after replacement will be... u1 Replace with the first measured temperature T before replacement. u1This is to achieve temperature calibration of the replaced first thermometer 108'.

[0048] Optionally, the first and second measured temperatures are within a linear temperature range.

[0049] As a preferred example, the difference between the proportion of the first set power P1 and the proportion of the second set power P2 provided by the upper and lower heating devices 107 is less than 10% (wherein, the proportion of the first set power P1 is the ratio of the power of the upper heating device to the total power of the upper and lower heating devices, and the proportion of the second set power P2 is the ratio of the power of the lower heating device to the total power of the upper and lower heating devices), so that the difference between the corresponding first measured temperature T1 and the second measured temperature T2 is less than 10℃, preventing the lower heating device from having a significant impact on the temperature fluctuation of the upper heating device, thereby ensuring the calibration accuracy of the temperature measuring device. More preferably, the first set power P1 and the second set power P2 are equal; preferably, the range of the set power is 14kW-50kW.

[0050] S4. Perform epitaxial layer growth at the first process temperature T1 to obtain the first growth rate K1, and obtain the first actual temperature t1 corresponding to the first growth rate K1 according to the correspondence described in step S2, and obtain the temperature difference ΔT1 between the first actual temperature t1 and the first process temperature T1.

[0051] S5. Take the nth process temperature T near the first process temperature. n At the nth process temperature T n Epitaxial layer growth is performed below to obtain the nth growth rate K. n And obtain the nth growth rate K according to the correspondence described in step S2. n The corresponding nth actual temperature t n Obtain the nth actual temperature t n With the nth process temperature T n Temperature difference ΔT n Where n = 2, 3, 4...N, N ≥ 2 and is an integer; preferably, N = 5 or 6.

[0052] Wherein, the first process temperature T1, the second process temperature T2, ..., the Nth process temperature T N This refers to the temperature measured by the first temperature measuring instrument; that is, during the epitaxial process, the input process temperature is based on the temperature measured by the first temperature measuring instrument. Simultaneously, the first process temperature T1, the second process temperature T2, ..., the Nth process temperature T... NThis refers to any temperature point within the linear temperature range. It should be noted that during the epitaxial process, if the first temperature sensor is not replaced, the process temperature is the temperature measured by the unreplaced first temperature sensor 108; if the first temperature sensor has been replaced, the process temperature is the temperature measured by the replaced first temperature sensor 108'. In other words, the epitaxial growth process temperature is based on the measured temperature obtained by the first temperature sensor actually installed in the semiconductor equipment.

[0053] Optionally, in steps S4 and S5, obtaining the growth rate specifically involves: setting the process temperature of the cavity 100 to a first process temperature T1, introducing process gas for epitaxial growth, and allowing the epitaxial growth time to be time1. After epitaxy, the epitaxial layer thickness d1 is measured to obtain the first growth rate K1. The formula for calculating the first growth rate K1 is K1 = d1 / time1. Similarly, the second process temperature T2, the third process temperature T3, ..., the Nth process temperature T can be obtained. N The corresponding second growth rate K2, third growth rate K3... Nth growth rate K N .

[0054] Optionally, in step S4, epitaxial layer growth is performed at the first process temperature T1, which is also the first measurement temperature. Further optionally, after obtaining the temperature difference ΔT1, the process further includes calibrating the replaced first temperature sensor 108' using the first actual temperature t1. Specifically, if the temperature difference ΔT1 is greater than 0, it indicates that the first process temperature of the replaced first temperature sensor 108' is lower than the first actual temperature t1; in this case, the absolute value of ΔT1 is added to the first process temperature T1 to correct the replaced first temperature sensor 108'. If the temperature difference ΔT1 is less than 0, it indicates that the first process temperature of the replaced first temperature sensor 108' is higher than the first actual temperature t1; in this case, the absolute value of ΔT1 is subtracted from the first process temperature T1 to correct the replaced first temperature sensor 108'. By calibrating the replaced first temperature sensor 108' using the temperature difference ΔT1 after initial power calibration, the measurement error of the replaced first temperature sensor 108' is reduced, improving its accuracy in subsequent temperature measurements.

[0055] S6. Repeat step S5 to obtain the temperature differences ΔT1, ΔT2, ..., ΔT N average by After calibration and replacement, the first process temperature T1, the second process temperature T2, ..., the Nth process temperature T of the first temperature measuring instrument are... N Specifically: if the average value If the value is greater than 0, it indicates that the process temperature of the first temperature measuring instrument 108' after replacement is lower than the actual temperature. Therefore, the first process temperature T1, the second process temperature T2, ..., the Nth process temperature T... NAdd each The absolute value is used to achieve calibration; if the average value is... If the value is less than 0, it indicates that the process temperature of the first temperature measuring instrument 108' after replacement is higher than the actual temperature. Therefore, the first process temperature T1, the second process temperature T2, ..., the Nth process temperature T... N Subtract respectively The absolute value is used to calibrate the process temperature.

[0056] S7. Repeat steps S4-S6, when... The process stops when the temperature (which can be an absolute value) is less than a set threshold. Preferably, the set threshold is 0.95°C.

[0057] Specifically, the relationship between the epitaxial layer growth rate and temperature in step S2 is as follows: the natural logarithm of the epitaxial layer growth rate and the reciprocal of the corresponding temperature are linearly related. Further, the expression for this relationship is:

[0058]

[0059] Where K is the epitaxial layer growth rate, R is the molar gas constant, and E is the epitaxial layer growth rate. a C is the reaction activation energy, C is a constant, and t is the temperature; in step S2, the constant C and the reaction activation energy E are calculated by substituting the different process temperatures and corresponding epitaxial layer growth rates within the linear temperature range into the expression. a Then, the expression for the correspondence is obtained.

[0060] Furthermore, in steps S4 and S5, based on the expression of the obtained correspondence, the epitaxial layer growth rate K at different process temperatures is substituted. n The corresponding actual temperature t can then be obtained. n According to the expression for the corresponding relationship, when the reaction activation energy E a When constant, the natural logarithm of the epitaxial layer growth rate at different temperatures has a linear relationship with the reciprocal of the corresponding temperature (e.g., Figure 3 As shown), from Figure 3 As can be seen in this embodiment, when the reciprocal of temperature 1 / T is between 0.00095 and 0.0012, the reciprocal of temperature 1 / T has a linear relationship with the natural logarithm of the epitaxial layer growth rate. Outside the linear temperature range, the natural logarithm of the epitaxial layer growth rate and the corresponding reciprocal of temperature do not have a linear relationship. Therefore, the process temperatures in steps S3-S6 are all performed within the linear temperature range, which is beneficial to ensuring the accuracy of calibration.

[0061] As a preferred example, the process gas for growing the epitaxial layer includes one or more of SiH4, SiHCl3, SiH2Cl2, and SiCl4.

[0062] Steps S5 and S6 involve using multiple temperature differences ΔT corresponding to different process temperatures. n average The first thermometer 108' after replacement was recalibrated, and the overall deviation of the first thermometer 108' was adjusted, which further improved the temperature measurement accuracy of the first thermometer 108' after replacement.

[0063] Optionally, the first and second thermometers may be pyrometers.

[0064] In summary, due to the inherent errors in new temperature measuring devices, calibration is required. Furthermore, the errors of temperature measuring devices can vary depending on the batch, with each device exhibiting its own overall deviation. Compared to existing temperature calibration methods, the temperature calibration method for semiconductor equipment provided by this invention obtains the correlation between epitaxial layer growth rate and temperature, calculates the actual temperature using the epitaxial layer growth rate, and calibrates the replaced first temperature measuring instrument using the average difference between the actual temperature and the process temperature. This method offers advantages such as the ability to adjust overall deviation, high calibration accuracy, and strong operability.

[0065] Although the present invention has been described in detail through the preferred embodiments above, it should be understood that the above description should not be considered as a limitation of the present invention. Various modifications and substitutions to the present invention will be apparent to those skilled in the art after reading the above description. Therefore, the scope of protection of the present invention should be defined by the appended claims.

Claims

1. A temperature calibration method for a temperature measuring device used in semiconductor equipment, characterized in that, Includes the following steps: S1. A semiconductor device is provided, the semiconductor device comprising: a cavity, the cavity including a base for supporting a substrate; upper and lower heating devices for providing thermal radiation to the cavity, and adjusting the temperature inside the cavity by adjusting the power of the upper and lower heating devices; and a temperature measuring device, the temperature measuring device including a first temperature measuring instrument disposed above the cavity and a second temperature measuring instrument disposed below the cavity; S2. Obtain the relationship between epitaxial layer growth rate and temperature, wherein the temperature is a linear temperature range of 500℃-850℃, and within the linear temperature range, the natural logarithm of the epitaxial layer growth rate and the reciprocal of the corresponding temperature are linearly related. S3. Preliminary power calibration: Calibrate the replaced first temperature measuring instrument by setting the measurement temperature corresponding to the power. S4. Perform epitaxial layer growth at the first process temperature T1 to obtain the first growth rate K1, and obtain the first actual temperature t1 corresponding to the first growth rate K1 according to the correspondence described in step S2, and obtain the temperature difference ΔT1 between the first actual temperature t1 and the first process temperature T1. S5. Take the nth process temperature T near the first process temperature. n At the nth process temperature T n Epitaxial layer growth is performed below to obtain the nth growth rate K. n And obtain the nth growth rate K according to the correspondence described in step S2. n The corresponding nth actual temperature t n Obtain the nth actual temperature t n With the nth process temperature T n Temperature difference ΔT n , where n = 2, 3, 4...N, N ≥ 2, and is an integer; S6. Repeat step S5 to obtain the temperature differences ΔT1, ΔT2, ..., ΔT N average ;by After calibration and replacement, the first process temperature T1, the second process temperature T2, ..., the Nth process temperature T of the first temperature measuring instrument are... N ; S7. Repeat steps S4-S6, when... Stop when the value is below the set threshold.

2. The temperature calibration method for a temperature measuring device for semiconductor equipment as described in claim 1, characterized in that, The set threshold is 0.95℃.

3. The temperature calibration method for a temperature measuring device for semiconductor equipment as described in claim 1, characterized in that, In step S3, the preliminary power calibration specifically involves: providing the upper and lower heating devices with corresponding first and second set powers, respectively; obtaining the first and second measured temperatures of the first and second thermometers at the corresponding set powers; replacing the first thermometer; providing the upper and lower heating devices with the corresponding first and second set powers; and calibrating the replaced first thermometer with the corresponding first measured temperature.

4. The temperature calibration method for a temperature measuring device for semiconductor equipment as described in claim 1, characterized in that, In step S2, the relationship between epitaxial layer growth rate and temperature is obtained. Specifically, process gas is introduced into the cavity to grow an epitaxial layer on the substrate, and the epitaxial layer growth rate at different temperature points within the linear temperature range is calculated to obtain the relationship between epitaxial layer growth rate and temperature.

5. The temperature calibration method for a temperature measuring device for semiconductor equipment as described in claim 1, characterized in that, First process temperature T1, second process temperature T2, ..., Nth process temperature T N This is the temperature measured by the first thermometer.

6. The temperature calibration method for a temperature measuring device for semiconductor equipment as described in claim 3, characterized in that, In step S4, epitaxial layer growth is performed at the first process temperature T1, which is the first measurement temperature.

7. The temperature calibration method for a temperature measuring device for semiconductor equipment as described in claim 6, characterized in that, In step S4, after obtaining the temperature difference ΔT1, the replacement first thermometer is calibrated with the first actual temperature t1.

8. The temperature calibration method for a temperature measuring device for semiconductor equipment as described in claim 4, characterized in that, First process temperature T1, second process temperature T2, ..., Nth process temperature T N For any temperature point within the linear temperature range.

9. The temperature calibration method for a temperature measuring device for semiconductor equipment as described in claim 1, characterized in that, The expression for the correspondence is: Where K is the epitaxial layer growth rate. For molar gas constant, The activation energy of the reaction, It is a constant. Let t be the temperature; substitute different temperatures t and corresponding epitaxial layer growth rates K within the linear temperature range into the expression to obtain the expression for the corresponding relationship.

10. The temperature calibration method for a temperature measuring device for semiconductor equipment as described in claim 1, characterized in that, The N=5 or 6.

11. The temperature calibration method for a temperature measuring device for semiconductor equipment as described in claim 3, characterized in that, The difference between the percentage of the first set power and the percentage of the second set power is less than 10%.

12. The temperature calibration method for a temperature measuring device for semiconductor equipment as described in claim 3, characterized in that, The difference between the first and second measured temperatures is less than 10°C.

13. The temperature calibration method for a temperature measuring device for semiconductor equipment as described in claim 1, characterized in that, The process gas for growing the epitaxial layer includes one or more of SiH4, SiHCl3, SiH2Cl2, and SiCl4.

14. The temperature calibration method for a temperature measuring device for semiconductor equipment as described in claim 1, characterized in that, The set power range is 14kW-50kW.

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