Surge protector with shunt holes

Abstract

The present invention provides a surge protector with shunt holes, which includes an N-type substrate. The N-type substrate includes a first N-type impurity doping region, a second N-type impurity doping region, and a P-type impurity doping region. The first N-type impurity doping region is located at one end of the N-type substrate, and a first shunt hole is provided inside the first N-type impurity doping region, and there is a spacing between the first shunt holes. The second N-type impurity doping region is located at the other end of the N-type substrate, and a second shunt hole is provided inside the second N-type impurity doping region, and there is a spacing between the second shunt holes. The first shunt hole and the second shunt hole can disperse current, and the P-type impurity doping region is provided in the middle of the N-type substrate. One end of the first N-type impurity doping region is connected to a first electrode, and one end of the second N-type impurity doping region is connected to a second electrode. It effectively solves the technical problem that the common terminals of existing VDMOS transistors or certain integrated circuits are easily damaged by large currents.

Description

[0001] This application is a divisional application of the patent application with the patent application number "202110533872.4", the application date of "May 17, 2021", and the title of "Dual-channel Bidirectional Surge Protector and Its Manufacturing Method". Technical Field

[0002] The present invention relates to the field of circuit components, and particularly relates to a surge protector. Background Art

[0003] In modern society, integrated circuits are widely used in industrial and civil electronic devices. An integrated circuit can connect the circuit components and wires required in a circuit by adopting a certain process. However, as a circuit component, the gate and source of a VDMOS transistor are vulnerable to large currents, and the gate and drain of the VDMOS transistor are also vulnerable to large currents. Similarly, the common terminal of some integrated circuits is also vulnerable to large currents. Therefore, there is a technical problem that the common terminals of existing VDMOS transistors or some integrated circuits are all vulnerable to large currents.

[0004] Therefore, it is necessary to provide a surge protector with a shunt hole to solve the above technical problems. Summary of the Invention

[0005] The present invention provides a surge protector with a shunt hole, effectively solving the technical problem that the common terminals of existing VDMOS transistors or some integrated circuits are all vulnerable to large currents.

[0006] The present invention provides a surge protector with a shunt hole, which includes:

[0007] An N-type substrate, which includes,

[0008] A first N-type impurity doped region, disposed at one end of the N-type substrate. A first shunt hole is provided inside the first N-type impurity doped region, and a spacing is provided between adjacent first shunt holes. The first shunt hole is used to disperse current;

[0009] A second N-type impurity doped region, disposed at the other end of the N-type substrate. A second shunt hole is provided inside the second N-type impurity doped region, and a spacing is provided between adjacent second shunt holes. The second shunt hole is used to disperse current;

[0010] A P-type impurity doped region, disposed in the middle of the N-type substrate, with one end connected to the first N-type impurity doped region and the other end connected to the second N-type impurity doped region;

[0011] One end of the first N-type impurity doping region is connected to a first electrode, and one end of the second N-type impurity doping region is connected to a second electrode. For a surge protector with a shunt hole, current is input from the first electrode and output from the second electrode, or current is input from the second electrode and output from the first electrode, so as to effectively disperse the current and provide bidirectional surge protection.

[0012] In the surge protector with a shunt hole according to the present invention, one end of the first N-type impurity doping region is further connected to a third electrode. For a surge protection device with a shunt hole, current is input from the first electrode and the third electrode, and output from the second electrode, or current is input from the second electrode of the surge protector with a shunt hole, and output from the first electrode and the third electrode.

[0013] In the surge protector with a shunt hole according to the present invention, the distance between adjacent first shunt holes in the middle of the first N-type impurity doping region is smaller than the distance between adjacent first shunt holes at both ends of the first N-type impurity doping region, and the number of first shunt holes in the middle of the first N-type impurity doping region is greater than the number of first shunt holes at both ends of the first N-type impurity doping region; the distance between adjacent second shunt holes in the middle of the second N-type impurity doping region is smaller than the distance between adjacent second shunt holes at both ends of the second N-type impurity doping region, and the number of second shunt holes in the middle of the second N-type impurity doping region is greater than the number of second shunt holes at both ends of the second N-type impurity doping region, so that more shunt holes can be made in the middle of the N-type impurity doping region for current shunting.

[0014] In the surge protector with a shunt hole according to the present invention, the distance between adjacent first shunt holes is equal, and the width of the first shunt holes in the middle of the first N-type impurity doping region is smaller than the width of the first shunt holes at both ends of the first N-type impurity doping region; the distance between adjacent second shunt holes is equal, and the width of the first shunt holes in the middle of the second N-type impurity doping region is smaller than the width of the second shunt holes at both ends of the second N-type impurity doping region, so that a larger current area can be shunted through more shunt holes and the shunt holes shunt more evenly.

[0015] In the surge protector with a shunt hole according to the present invention, the shape of the first shunt hole is circular or rectangular, and the shape of the second shunt hole is circular or rectangular, so as to disperse the current while the shunt holes are relatively easy to fabricate.

[0016] In the surge protector with a shunt hole according to the present invention, the widths of the first shunt holes are equal, the distances between adjacent first shunt holes are equal, the widths of the second shunt holes are equal, and the distances between adjacent second shunt holes are equal, so as to evenly disperse the current.

[0017] In the surge protector with shunt holes according to the present invention, the shape of the first shunt hole is square or hexagonal, and the shape of the second shunt hole is square or hexagonal; the spacing of the first shunt holes is consistent with the side length of the first shunt hole, and the spacing of the second shunt holes is consistent with the side length of the second shunt hole, so that the surge protector with shunt holes can better disperse current.

[0018] In the surge protector with shunt holes according to the present invention, the side lengths of the first shunt hole and the second shunt hole are both set values, which are used to avoid the situation that the side length of the shunt hole is too large resulting in a small number of shunt holes and poor shunt effect, and to avoid the situation that the side length of the shunt hole is too small resulting in poor shunt effect of the shunt hole.

[0019] In the surge protector with shunt holes according to the present invention, the bottom end of the first N-type impurity doping region is stepped, the depth of the first shunt hole in the middle of the first N-type impurity doping region is greater than the depth of the first shunt holes at both ends of the first N-type impurity doping region, the bottom end of the second N-type impurity doping region is stepped, and the depth of the second shunt hole in the middle of the second N-type impurity doping region is greater than the depth of the second shunt holes at both ends of the second N-type impurity doping region, which is used to ensure that the shunt holes can shunt when there is a large current and to avoid a large current flowing through the N-type impurity doping region at the same time.

[0020] The present invention provides a method for manufacturing a surge protector with shunt holes, which includes:

[0021] Providing an N-type substrate,

[0022] Doping P-type impurities on the N-type substrate to form a P-type impurity doping region;

[0023] Doping N-type impurities at one end of the P-type impurity doping region to form a first N-type impurity doping region;

[0024] Doping N-type impurities at the other end of the P-type impurity doping region to form a second N-type impurity doping region;

[0025] The first N-type impurity doping region, the P-type impurity doping region and the second N-type impurity doping region form an NPN-type triode;

[0026] Manufacturing first shunt holes inside the first N-type impurity doping region and second shunt holes inside the second N-type impurity doping region;

[0027] Leading out a first electrode and a third electrode at one end of the first N-type impurity doping region, and leading out a second electrode at one end of the second N-type impurity doping region;

[0028] Adjust the amplification factor of the NPN transistor corresponding to the first electrode and the second electrode on the surge protector with shunt holes, and the protection voltage of the circuit formed by the first electrode and the second electrode can be adjusted. Adjust the amplification factor of the NPN transistor corresponding to the second electrode and the third electrode on the surge protector with shunt holes, and the protection voltage of the circuit formed by the second electrode and the third electrode can be adjusted.

[0029] Compared with the prior art, the beneficial effects of the present invention are as follows: The surge protector with shunt holes of the present invention includes an N-type substrate. One end of the N-type substrate is provided with a first N-type impurity doping region, the other end of the N-type substrate is provided with a second N-type impurity doping region, and a P-type impurity doping region is provided in the middle of the N-type substrate. When a large current passes through the circuit, the large injection effect will occur in the first N-type impurity doping region and the second N-type impurity doping region, and the large injection effect can reduce the internal resistance of the surge protector with shunt holes. Therefore, the large current passes through the surge protector with shunt holes of the present invention, thereby improving the surge resistance of the surge protector with shunt holes of the present invention.

[0030] The surge protector with shunt holes of the present invention is provided with a plurality of shunt holes in the N-type impurity doping region. When a large current passes through the surge protector with shunt holes of the present invention, the shunt holes can effectively disperse the current and prevent the current from being overly concentrated and burning out the surge protector with shunt holes. It effectively solves the technical problem that the common terminals of existing VDMOS transistors or certain integrated circuits are vulnerable to large currents.

[0031] The present invention can be applied to the packaging of a single chip, and the present invention can achieve dual-channel bidirectional surge protection for a single chip. The present invention can replace the structure of two chips in parallel packaging. After a single chip packages the surge protector with shunt holes of the present invention, the contact area of the common terminal of the integrated circuit of this chip is larger than the contact area of the common terminals of the two chips in parallel packaging, making the heat dissipation ability of the chip better. Single-chip packaging can effectively reduce the packaging cost of two-chip packaging and avoid the problem of inconsistency between the two packaged chips. Description of the Drawings

[0032] Figure 1 It is a plan view of an embodiment of the surge protector with shunt holes of the present invention.

[0033] Figure 2 It is an equivalent circuit structure diagram of an embodiment of the surge protector with shunt holes of the present invention.

[0034] Figure 3 It is a schematic diagram of the first embodiment of the shunt holes of the surge protector with shunt holes of the present invention.

[0035] Figure 4 It is a schematic diagram of the second embodiment of the shunt holes of the surge protector with shunt holes of the present invention.

[0036] Figure 5 Schematic diagram of the third embodiment of the shunt hole of the surge protector with a shunt hole according to the present invention.

[0037] In the figure, 10 is a surge protector with a shunt hole, 11 is an N-type substrate; 111 is a first N-type impurity doped region; 1111 is a first shunt hole; 1112 is a first conductive region; 112 is a second N-type impurity doped region; 1121 is a second shunt hole; 1122 is a second conductive region; 113 is a P-type impurity doped region; 12 is a first electrode; 13 is a second electrode; 14 is a third electrode; 20 is a surge protector with a shunt hole; 211 is a first N-type impurity doped region; 2111 is a first shunt hole; 212 is a second N-type impurity doped region; 2121 is a second shunt hole; 30 is a surge protector with a shunt hole; 311 is a first N-type impurity doped region; 3111 is a first shunt hole; 312 is a second N-type impurity doped region; 3121 is a second shunt hole; 40 is a surge protector with a shunt hole; 411 is a first N-type impurity doped region; 4111 is a first shunt hole; 412 is a second N-type impurity doped region; 4121 is a second shunt hole. Detailed implementation manners

[0038] Next, the technical solutions in the embodiments of the present invention will be clearly and completely described in conjunction with the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, rather than all the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative efforts belong to the scope of protection of the present invention.

[0039] The directional terms mentioned in the present invention, such as "up", "down", "front", "back", "left", "right", "inside", "outside", "side", "top" and "bottom" and other words, are only references to the orientation of the accompanying drawings. The directional terms used are for explaining and understanding the present invention, rather than for limiting the present invention.

[0040] In the terms of the present invention, words such as "first" and "second" are only for descriptive purposes, and cannot be understood as indicating or implying relative importance, nor as a limitation on the sequence.

[0041] Please refer to Figure 1 , Figure 1 which is a plan view of an embodiment of the surge protector 10 with a shunt hole according to the present invention.

[0042] In the figure, units with similar structures are denoted by the same reference numerals.

[0043] Please refer to Figure 1, the present invention provides a surge protector 10 with shunt holes, which includes an N-type substrate 11. The N-type substrate 11 includes a first N-type impurity doped region 111, a second N-type impurity doped region 112, and a P-type impurity doped region 113. The first N-type impurity doped region 111 is disposed at one end of the N-type substrate 11, and a first shunt hole 1111 is provided inside the first N-type impurity doped region 111. A spacing is provided between adjacent first shunt holes 1111, and the first shunt hole 1111 is used to disperse current. The first N-type impurity doped region 111 is further provided with a first conductive region 1112, and the first conductive region 1112 can be used for conduction. The second N-type impurity doped region 112 is disposed at the other end of the N-type substrate 11, and a second shunt hole 1121 is provided inside the second N-type impurity doped region 112. A spacing is provided between adjacent second shunt holes 1121, and the second shunt hole 1121 is used to disperse current. The second N-type impurity doped region 112 is further provided with a second conductive region 1122, and the second conductive region 1122 can be used for conduction. The P-type impurity doped region 113 is disposed in the middle of the N-type substrate 11, one end of the P-type impurity doped region 113 is connected to the first N-type impurity doped region 111, and the other end of the P-type impurity doped region 113 is connected to the second N-type impurity doped region 112.

[0044] Please refer to Figure 2 , Figure 2 which is an equivalent circuit structure diagram of an embodiment of the surge protector 10 with shunt holes of the present invention.

[0045] Please refer to Figure 1 and Figure 2 , one end of the first N-type impurity doped region 111 is connected to a first electrode 12, and one end of the second N-type impurity doped region 112 is connected to a second electrode 13. The surge protector 10 with shunt holes can input current from the first electrode 12, and the surge protector 10 with shunt holes can output current from the second electrode 13. Or the surge protector 10 with shunt holes can input current from the second electrode 13, and the surge protector 10 with shunt holes can output current from the first electrode 12. When there is a large current flowing from the first electrode 12 to the first N-type impurity doped region 111 in the circuit, the first N-type impurity doped region 111 will generate a large injection effect. When there is a large current flowing from the second electrode 13 to the second N-type impurity doped region 112 in the circuit, the second N-type impurity doped region 112 will generate a large injection effect. The large injection effect means that the concentration of non-equilibrium minority carriers injected into the semiconductor approaches or exceeds the original equilibrium majority carrier concentration. The large injection effect can reduce the internal resistance of the surge protector 10 with shunt holes, and the large current passes through the surge protector 10 with shunt holes of the present invention. Therefore, the surge protector 10 with shunt holes can be used to provide surge protection for integrated circuits. The surge protector 10 with shunt holes of the present invention can protect the integrated circuit and prevent large current from damaging the circuit elements in the integrated circuit.

[0046] Please refer to Figure 1 , in the surge protector 10 with shunt holes of the present invention, a plurality of first shunt holes 1111 are provided in the first N-type impurity doped region 111, and a plurality of second shunt holes 1121 are provided in the second N-type impurity doped region 112. When a large current passes through the surge protector 10 with shunt holes, the shunt holes can effectively disperse the current and prevent the current from being overly concentrated and burning out the surge protector 10 with shunt holes. The surge protector 10 with shunt holes of the present invention can effectively solve the technical problem that the common terminals of existing VDMOS transistors or certain integrated circuits are vulnerable to large currents. A VDMOS transistor (vertical double-diffused metal oxide semiconductor field effect transistor) is a type of acoustic effect power transistor. The VDMOS transistor has the characteristics of fast switching speed, small switching loss, high input impedance, small drive power, good frequency characteristics, and highly linear transconductance. The VDMOS transistor is applied to devices in various fields, including inverters, switching power supplies, electronic switches, high-fidelity audio, and electronic ballasts, etc.

[0047] Please refer to Figures 1 to 2 , one end of the first N-type impurity doped region 111 is also connected to a third electrode 14. The surge protection device 10 with shunt holes inputs current from the first electrode 12 and the third electrode 14, and outputs current from the second electrode 13. Or the surge protector 10 with shunt holes inputs current from the second electrode 13, and outputs current from the first electrode 12 and the third electrode 14. Therefore, the surge protector 10 with shunt holes of the present invention can be applied in the packaging of a single chip, and the surge protector 10 with shunt holes of the present invention can achieve two-way double-path surge protection for a single chip. The surge protector 10 with shunt holes of the present invention can replace the structure of two chips in parallel packaging. After a single chip is packaged in the surge protector 10 with shunt holes, the contact area of the common terminal of the chip integrated circuit is larger than that of the common terminals of the two chips in parallel packaging, making the heat dissipation ability of the chip better. Single-chip packaging can effectively reduce the packaging cost of two-chip packaging and avoid the problem of inconsistency between the two packaged chips.

[0048] Please refer to Figure 1, the widths of the first shunt holes 1111 are equal, and the distances between adjacent first shunt holes 1111 are equal. The widths of the second shunt holes 1121 are equal, and the distances between adjacent second shunt holes 1121 are equal. Since the widths of the first shunt holes 1111 are equal and the distances between adjacent first shunt holes 1111 are equal, when a large current passes through the surge protector 10 with shunt holes, the first shunt holes 1111 can evenly disperse the current, preventing the large current from being too concentrated and damaging the surge protector 10 with shunt holes. Since the widths of the second shunt holes 1121 are equal and the distances between adjacent second shunt holes 1121 are equal, when a large current passes through the surge protector 10 with shunt holes, the second shunt holes 1121 can evenly disperse the current, preventing the large current from being too concentrated and damaging the surge protector 10 with shunt holes.

[0049] Please refer to Figure 1 , the shape of the first shunt holes 1111 is square or hexagonal, and the distance between the first shunt holes 1111 is consistent with the side length of the first shunt holes 1111. Therefore, the first shunt holes 1111 can disperse the current more evenly, and the large current can be better dispersed in the surge protector 10 with shunt holes. The shape of the second shunt holes 1121 is also square or hexagonal. The distance between the second shunt holes 1121 is consistent with the side length of the second shunt holes 1121. Therefore, the second shunt holes 1121 can disperse the current more evenly, and the large current can be better dispersed in the surge protector 10 with shunt holes. The side lengths of the first shunt holes 1111 and the second shunt holes 1121 are both set values, and according to the process conditions, this set value is 10 - 30 microns. Setting the side length of the shunt holes can prevent the side length of the shunt holes from being too large, resulting in fewer shunt holes and a poor shunt effect. At the same time, setting the side length of the shunt holes can also prevent the side length of the shunt holes from being too small, resulting in a poor shunt effect of the shunt holes.

[0050] Please refer to Figure 1 , the shape of the first shunt holes 1111 is circular or rectangular, and the first shunt holes 1111 can be used to disperse the current. At the same time, since the shape of the first shunt holes 1111 is circular or rectangular, compared with the first shunt holes 1111 in the shape of square or regular hexagon, the first shunt holes 1111 in the shape of circular or rectangular are relatively easy to manufacture. The shape of the second shunt holes 1121 is circular or rectangular, and the second shunt holes 1121 can be used to disperse the current. At the same time, since the shape of the second shunt holes 1121 is circular or rectangular, compared with the second shunt holes 1121 in the shape of square or regular hexagon, the second shunt holes 1121 in the shape of circular or rectangular are relatively easy to manufacture.

[0051] Please refer to Figure 3 , Figure 3 is a schematic diagram of the first embodiment of the shunt holes of the surge protector 20 with shunt holes according to the present invention.

[0052] Please refer to Figure 1 and Figure 3 , the distance between the first shunt holes 2111 adjacent to the middle of the first N-type impurity doping region 211 is smaller than the distance between the first shunt holes 2111 adjacent to both ends of the first N-type impurity doping region 211. Therefore, the number of the first shunt holes 2111 in the middle of the first N-type impurity doping region 211 is larger than the number of the first shunt holes 2111 at both ends of the first N-type impurity doping region 211. When a large current passes through the surge protector 20 having shunt holes, since the distance between the middle of the first N-type impurity doping region 211 and the wire is smaller than the distance between both ends of the first N-type impurity doping region 211 and the wire, the current in the middle of the first N-type impurity doping region 211 is larger than the current at both ends of the first N-type impurity doping region 211. More first shunt holes 2111 can be made in the middle of the first N-type impurity doping region 211 for shunting, and the shunting effect in the middle of the first N-type impurity doping region 211 is better. Therefore, the surge protector 20 having shunt holes of the present invention has a better surge resistance effect.

[0053] Please refer to Figure 1 and Figure 3 , the distance between the second shunt holes 2121 adjacent to the middle of the second N-type impurity doping region 212 is smaller than the distance between the second shunt holes 2121 adjacent to both ends of the second N-type impurity doping region 212. Therefore, the number of the first shunt holes 2121 in the middle of the second N-type impurity doping region 212 is larger than the number of the second shunt holes 2121 at both ends of the second N-type impurity doping region 212. When a large current passes through the surge protector 20 having shunt holes, since the distance between the middle of the second N-type impurity doping region 212 and the wire is smaller than the distance between both ends of the second N-type impurity doping region 212 and the wire, the current in the middle of the second N-type impurity doping region 212 is larger than the current at both ends of the second N-type impurity doping region 212. More second shunt holes 2121 can be made in the middle of the second N-type impurity doping region 212 for shunting, and the shunting effect in the middle of the second N-type impurity doping region 212 is better. Therefore, the surge protector 20 having shunt holes of the present invention has a better surge resistance effect.

[0054] Please refer to Figure 4 , Figure 4 is a schematic diagram of a second embodiment of the shunt hole 30 of the surge protector having shunt holes of the present invention.

[0055] Please refer to Figure 1 and Figure 4, the spacing between adjacent first shunt holes 3111 is equal, and the width of the first shunt holes 3111 in the middle of the first N-type impurity doping region 311 is smaller than the width of the first shunt holes 3111 at both ends of the first N-type impurity doping region 311. Since the distance between the middle of the first N-type impurity doping region 311 and the wire is smaller than the distance between both ends of the first N-type impurity doping region 311 and the wire, the current in the middle of the first N-type impurity doping region 311 is greater than the current at both ends of the first N-type impurity doping region 311. In the region where a larger current flows, insufficient number of shunt holes easily causes the surge protector 30 with shunt holes to be damaged. Since the width of the first shunt holes 3111 in the middle of the first N-type impurity doping region 311 is smaller than the width of the first shunt holes 3111 at both ends of the first N-type impurity doping region 311, the first shunt holes 3111 in the middle of the first N-type impurity doping region 311 are denser. The number in the middle of the first N-type impurity doping region 311 is larger, so the shunt effect in the middle of the first N-type impurity doping region 311 is better. When a large current passes through the surge protector 30 with shunt holes of the present invention, the region with a larger current can be shunted through more first shunt holes 3111. Therefore, the first shunt holes 3111 in the middle of the first N-type impurity doping region 311 are shunted more evenly, and the shunt effect of the first shunt holes 3111 is better, and the surge protector 30 with shunt holes of the present invention has a better surge resistance effect.

[0056] Please refer to Figure 1 and Figure 4 , the spacing between adjacent second shunt holes 3121 is equal, and the width of the second shunt holes 3121 in the middle of the second N-type impurity doping region 312 is smaller than the width of the second shunt holes 3121 at both ends of the second N-type impurity doping region 312. Since the distance between the middle of the second N-type impurity doping region 312 and the wire is smaller than the distance between both ends of the second N-type impurity doping region 312 and the wire, the current in the middle of the second N-type impurity doping region 211 is greater than the current at both ends of the second N-type impurity doping region 312. In the region where a larger current flows, insufficient number of shunt holes easily causes the surge protector 30 with shunt holes to be damaged. Since the width of the first shunt holes 3121 in the middle of the second N-type impurity doping region 312 is smaller than the width of the second shunt holes 2121 at both ends of the second N-type impurity doping region 312, the second shunt holes 312 in the middle of the second N-type impurity doping region 312 are denser. The number in the middle of the first N-type impurity doping region 311 is larger, so the shunt effect in the middle of the second N-type impurity doping region 312 is better. When a large current passes through the surge protector 30 with shunt holes of the present invention, the region with a larger current can be shunted through more second shunt holes 3121. Therefore, the second shunt holes 312 in the middle of the second N-type impurity doping region 312 are shunted more evenly, and the shunt effect of the second shunt holes 3121 is better, and the surge protector 30 with shunt holes of the present invention has a better surge resistance effect.

[0057] Please refer toFigure 5 , Figure 5 Schematic diagram of the third embodiment of the shunt hole of the surge protector 40 with a shunt hole according to the present invention.

[0058] Please refer to Figure 1 and Figure 5 , the bottom end of the first N-type impurity doping region 411 is stepped. Therefore, the depth of the first shunt hole 4111 in the middle of the first N-type impurity doping region 411 is greater than the depth of the first shunt holes 4111 at both ends of the first N-type impurity doping region 411. Since the distance between the middle of the first N-type impurity doping region 411 and the wire is less than the distances between both ends of the first N-type impurity doping region 411 and the wire, large current is likely to flow from the middle of the first N-type impurity doping region 411 to the P-type impurity doping region. Larger current flows into the P-type impurity doping region simultaneously, and the larger current is likely to damage the surge protector 40 with a shunt hole of the present invention. Since the depth of the first shunt hole 4111 in the middle of the first N-type impurity doping region 411 is greater than the depth of the first shunt holes 4111 at both ends of the first N-type impurity doping region 411, the first shunt hole 4111 can be used to disperse the larger current and avoid the larger current passing through the first N-type impurity doping region 411 simultaneously. Therefore, the shunt effect of the first shunt hole 4111 is better, and the surge protector 40 with a shunt hole of the present invention has a better surge resistance effect.

[0059] Please refer to Figure 1 and Figure 5 , the bottom end of the second N-type impurity doping region 412 is stepped. Therefore, the depth of the second shunt hole 4,121 in the middle of the second N-type impurity doping region 412 is greater than the depth of the second shunt holes 4121 at both ends of the second N-type impurity doping region 412. Since the distance between the middle of the second N-type impurity doping region 412 and the wire is less than the distances between both ends of the second N-type impurity doping region 412 and the wire, large current is likely to flow from the middle of the second N-type impurity doping region 412 to the P-type impurity doping region. Larger current flows into the P-type impurity doping region simultaneously, and the larger current is likely to damage the surge protector 40 with a shunt hole of the present invention. Since the depth of the second shunt hole 4121 in the middle of the second N-type impurity doping region 412 is greater than the depth of the second shunt holes 412 at both ends of the second N-type impurity doping region 412, the second shunt hole 4121 can be used to disperse the larger current and avoid the larger current passing through the second N-type impurity doping region simultaneously. Therefore, the shunt effect of the second shunt hole 4121 is better, and the surge protector 40 with a shunt hole of the present invention has a better surge resistance effect.

[0060] Users can select the features of multiple shunt holes according to the design requirements to manufacture the surge protector with shunt holes. For example, if users need a better shunt effect of the surge protector, they can manufacture a surge protector with shunt holes. Users can make the shape of the shunt holes square or hexagonal. Since the distance between the middle of the N-type impurity doping region and the wire is less than the distance between the two ends of the N-type impurity doping region and the wire, the current in the middle of the N-type impurity doping region is greater than that at the two ends of the N-type impurity doping region. Therefore, users can make the bottom end of the N-type impurity doping region in a stepped shape. Moreover, users can set the depth of the shunt holes in the middle of the N-type impurity doping region to be greater than the depth of the shunt holes at the two ends of the N-type impurity doping region. Users can set the spacing between adjacent shunt holes in the middle of the N-type impurity doping region to be less than the spacing between adjacent shunt holes at the two ends of the N-type impurity doping region. And the width of the shunt holes in the middle of the N-type impurity doping region of the surge protector with shunt holes is less than the width of the shunt holes at the two ends of the N-type impurity doping region. Therefore, the surge protector with shunt holes makes more shunt holes in the area where large current flows, and the shunt effect of the surge protector with shunt holes is better. Since the depth of the shunt holes in the middle of the N-type impurity doping region is greater than the depth of the shunt holes at the two ends of the N-type impurity doping region, a larger circuit is difficult to flow through the N-type impurity doping region at the same time, avoiding damage to the surge protector with shunt holes by large current.

[0061] The manufacturing method of the surge protector with shunt holes of the present invention is as follows:

[0062] Users first provide an N-type substrate 11, and users dope P-type impurities on the N-type substrate 11 to form a P-type impurity doping region 113. Users dope N-type impurities at one end of the P-type impurity doping region 113 to form a first N-type impurity doping region 111. Users dope N-type impurities at the other end of the P-type impurity doping region to form a second N-type impurity doping region 112. The first N-type impurity doping region 111, the P-type impurity doping region 113 and the second N-type impurity doping region 112 form an NPN-type triode. The equivalent circuit structure of the NPN-type triode is as Figure 2 shown.

[0063] Subsequently, users make a first shunt hole 1111 inside the first N-type impurity doping region 111, and users make a second shunt hole 1121 inside the second N-type impurity doping region 112. Users lead out a first electrode 12 and a third electrode 14 at one end of the first N-type impurity doping region 111 respectively, and users lead out a second electrode 13 at one end of the second N-type impurity doping region 112.

[0064] Then, the user can adjust the amplification factor of the NPN transistor corresponding to the first electrode 12 and the second electrode 13, so that the user can adjust the protection voltage of the circuit formed by the first electrode 12, the second electrode 13, and the NPN transistor. The user can adjust the amplification factor of the NPN transistor corresponding to the second electrode 13 and the third electrode 14, so that the user can adjust the protection voltage of the circuit formed by the second electrode 13, the third electrode 14, and the NPN transistor. After that, the user completes the production of the surge protector with a shunt hole.

[0065] The working principle of the surge protector with a shunt hole according to the present invention is as follows:

[0066] When a relatively large current enters the surge protector 10 with a shunt hole from the first electrode 12 and the third electrode 14, the current mainly flows from the first conductive region 1112 of the first N-type impurity doped region 111 to the P-type impurity doped region 113. Since the first N-type impurity doped region 111 is provided with a plurality of first shunt holes 1111, when a large current passes through the first N-type impurity doped region 111, the first shunt holes 1111 can effectively disperse the current and prevent the current from being overly concentrated and burning out the surge protector 10 with a shunt hole. To make it easier for the user to fabricate the first shunt holes 1111, the shape of the first shunt holes 1111 can be circular or rectangular. After the current passes through the P-type impurity doped region 113, the current mainly flows to the second conductive region 1122 of the second N-type impurity doped region 112.

[0067] In order for the first shunt holes 1111 to disperse the current evenly, the widths of the first shunt holes 1111 are equal, and the distances between adjacent first shunt holes 1111 are equal. To achieve a better shunting effect of the first shunt holes 1111, the shape of the first shunt holes 1111 is square or hexagonal, and the distance between the first shunt holes 1111 is consistent with the side length of the first shunt holes 1111. To avoid a large side length of the first shunt holes 1111 resulting in a small number of shunt holes and a poor shunting effect, and at the same time to avoid a small side length of the first shunt holes 1111 resulting in a poor shunting effect, the side length of the first shunt holes 1111 is a set value.

[0068] Subsequently, the current flows through the second conductive region 1122 to the second electrode 13 and flows out from the second electrode 13. Since the second N-type impurity doped region 112 is provided with a plurality of second shunt holes 1121 with equal spacing, when a large current passes through the second N-type impurity doped region 112, the second shunt holes 1121 can effectively disperse the current and prevent the current from being overly concentrated and burning out the surge protector 10 with a shunt hole. To make it easier for the user to fabricate the second shunt holes 1121, the shape of the second shunt holes 1121 can be circular or rectangular. Therefore, the surge protector with a shunt hole has the function of surge protection.

[0069] In order to evenly disperse the current through the second current shunting holes 1121, the widths of the second current shunting holes 1121 are equal, and the spacing between adjacent second current shunting holes 1121 is equal. To achieve a better current shunting effect for the second current shunting holes 1121, the shape of the second current shunting holes 1121 is square or hexagonal, and the spacing between the second current shunting holes 1121 is consistent with the side length of the second current shunting holes 1121. To avoid a large side length of the second current shunting holes 1121 resulting in a small number of shunting holes and a poor shunting effect, and at the same time to avoid a small side length of the second current shunting holes 1121 resulting in a poor shunting effect, the side length of the second current shunting holes 1121 is a set value.

[0070] Since the distance between the middle of the first N-type impurity doping region 211 and the wire is less than the distances between the two ends of the first N-type impurity doping region 211 and the wire, the current in the middle of the first N-type impurity doping region 211 is greater than the current at the two ends of the first N-type impurity doping region 211. Therefore, the spacing between adjacent first current shunting holes 2111 is equal, and the width of the first current shunting holes 2111 in the middle of the first N-type impurity doping region 211 is less than the width of the first current shunting holes 2111 at the two ends of the first N-type impurity doping region 211.

[0071] Because in the region where a large current flows, insufficient numbers of current shunting holes can easily cause the surge protector 30 with current shunting holes to be damaged. Therefore, the spacing between adjacent first current shunting holes 3111 in the middle of the first N-type impurity doping region 311 is less than the spacing between adjacent first current shunting holes 3111 at the two ends of the first N-type impurity doping region 311. The number of first current shunting holes in the middle of the first N-type impurity doping region 311 is greater than the number of first current shunting holes 3111 at the two ends of the first N-type impurity doping region 311.

[0072] Because a large current flows through the first N-type impurity doping region 411 simultaneously, the large current can easily damage the surge protector 40 with current shunting holes. Therefore, the bottom end of the first N-type impurity doping region 411 is stepped, and the depth of the first current shunting holes 4111 in the middle of the first N-type impurity doping region 411 is greater than the depth of the second current shunting holes �111 at the two ends of the first N-type impurity doping region 4111.

[0073] When a large current enters the surge protector 10 with current shunting holes from the second electrode 13, the current mainly flows from the second conductive region 1122 of the second N-type impurity doping region 112 to the P-type impurity doping region 113. Since the second N-type impurity doping region 112 is provided with a plurality of second current shunting holes 1121, when a large current passes through the second N-type impurity doping region 112, the second current shunting holes 1121 can effectively disperse the current and prevent the current from being overly concentrated and burning out the surge protector 10 with current shunting holes.

[0074] Since the distance between the middle of the second N-type impurity doping region 212 and the wire is less than the distances between the two ends of the second N-type impurity doping region 212 and the wire, the current in the middle of the second N-type impurity doping region 212 is greater than the current at the two ends of the second N-type impurity doping region 212. Therefore, the spacing between adjacent second shunt holes 2121 is equal, and the width of the second shunt holes 2121 in the middle of the second N-type impurity doping region 212 is less than the width of the second shunt holes 2121 at the two ends of the second N-type impurity doping region 212.

[0075] Because in the region where a larger current flows, insufficient numbers of shunt holes can easily cause the surge protector 30 with shunt holes to be damaged. Therefore, the spacing between adjacent second shunt holes 3121 in the middle of the second N-type impurity doping region 312 is less than the spacing between adjacent second shunt holes 3121 at the two ends of the second N-type impurity doping region 312. The number of second shunt holes 3121 in the middle of the second N-type impurity doping region 312 is greater than the number of second shunt holes 3121 at the two ends of the second N-type impurity doping region 312.

[0076] Because a larger current flows through the second N-type impurity doping region 412 simultaneously, the larger current can easily damage the surge protector 40 originally having shunt holes. Therefore, the bottom end of the second N-type impurity doping region 412 is stepped, and the depth of the second shunt holes 4121 in the middle of the second N-type impurity doping region 412 is greater than the depth of the second shunt holes 4121 at the two ends of the second N-type impurity doping region 412.

[0077] Then, the current passes through the P-type impurity doping region 113, and the current mainly flows to the first conductive region 1112 of the first N-type impurity doping region 111. Subsequently, the current flows through the first conductive region 1112 to the first electrode 12 and the third electrode 14, and the current flows out from the first electrode 12 or the third electrode 14. Therefore, the surge protector 10 with shunt holes has the function of dual-path bidirectional surge protection.

[0078] Compared with the prior art, the beneficial effects of the present invention are as follows: The surge protector 10 with shunt holes of the present invention includes an N-type substrate 11. One end of the N-type substrate 11 is provided with a first N-type impurity doping region 111, the other end of the N-type substrate 11 is provided with a second N-type impurity doping region 112, and the middle of the N-type substrate 11 is provided with a P-type impurity doping region 113. When a large current passes through the circuit, a large injection effect will occur in the first N-type impurity doping region 111 and the second N-type impurity doping region 112, and the large injection effect can reduce the internal resistance of the surge protector 10 with shunt holes. Therefore, the large current passes through the surge protector 10 originally having shunt holes, thereby improving the surge resistance ability of the surge protector 10 originally having shunt holes.

[0079] The surge protector 10 with shunt holes of the present invention is provided with a plurality of shunt holes in the N-type impurity doping region. When a large current passes through the surge protector 10 with shunt holes, the shunt holes can effectively disperse the current and prevent the current from being overly concentrated and burning out the surge protector 10 with shunt holes. This effectively solves the technical problem that the common terminals of existing VDMOS transistors or certain integrated circuits are vulnerable to large currents.

[0080] The surge protector 10 with shunt holes of the present invention can be applied to the packaging of a single chip. The surge protector 10 with shunt holes can achieve dual-channel bidirectional surge protection for a single chip. The surge protector 10 with shunt holes can replace the parallel packaging structure of two chips. After a single chip is packaged in the surge protector 10 with shunt holes, the contact area of the common terminal of the chip integrated circuit is larger than that of the common terminals of the two chips in parallel packaging, enabling better heat dissipation of the chip. Single-chip packaging can effectively reduce the packaging cost of two-chip packaging and avoid the problem of inconsistency between the two packaged chips.

[0081] In summary, although the present invention has been disclosed above with preferred embodiments, the above preferred embodiments are not intended to limit the present invention. Those of ordinary skill in the art can make various modifications and refinements without departing from the spirit and scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the scope defined by the claims.

Claims

1. A surge protector with a diversion hole, characterized in that, It includes: An N-type substrate, which includes: A first N-type impurity doped region, disposed at one end of the N-type substrate. A first shunt hole is provided inside the first N-type impurity doped region, and a spacing is provided between adjacent first shunt holes. The first shunt hole is used to disperse current; A second N-type impurity doped region, disposed at the other end of the N-type substrate. A second shunt hole is provided inside the second N-type impurity doped region, and a spacing is provided between adjacent second shunt holes. The second shunt hole is used to disperse current; A P-type impurity doped region, disposed in the middle of the N-type substrate, with one end connected to the first N-type impurity doped region and the other end connected to the second N-type impurity doped region; One end of the first N-type impurity doped region is connected to a first electrode, and one end of the second N-type impurity doped region is connected to a second electrode, for a surge protector with shunt holes to input current from the first electrode and output current from the second electrode, or for a surge protector with shunt holes to input current from the second electrode and output current from the first electrode; The spacing between adjacent first shunt holes in the middle of the first N-type impurity doped region is smaller than the spacing between adjacent first shunt holes at both ends of the first N-type impurity doped region, and the number of first shunt holes in the middle of the first N-type impurity doped region is greater than the number of first shunt holes at both ends of the first N-type impurity doped region; or, the spacing between adjacent second shunt holes in the middle of the second N-type impurity doped region is smaller than the spacing between adjacent second shunt holes at both ends of the second N-type impurity doped region, and the number of second shunt holes in the middle of the second N-type impurity doped region is greater than the number of second shunt holes at both ends of the second N-type impurity doped region.

2. The surge protector with a diversion hole according to claim 1, characterized in that, One end of the first N-type impurity doped region is further connected to a third electrode, for a surge protection device with shunt holes to input current from the first electrode and the third electrode and output current from the second electrode, or for a surge protector with shunt holes to input current from the second electrode and output current from the first electrode and the third electrode.

3. A surge protector with a diversion hole, characterized in that, It includes: An N-type substrate, which includes: A first N-type impurity doped region, disposed at one end of the N-type substrate. A first shunt hole is provided inside the first N-type impurity doped region, and a spacing is provided between adjacent first shunt holes. The first shunt hole is used to disperse current; A second N-type impurity doped region, disposed at the other end of the N-type substrate. A second shunt hole is provided inside the second N-type impurity doped region, and a spacing is provided between adjacent second shunt holes. The second shunt hole is used to disperse current; A P-type impurity doped region, disposed in the middle of the N-type substrate, with one end connected to the first N-type impurity doped region and the other end connected to the second N-type impurity doped region; One end of the first N-type impurity doped region is connected to a first electrode, and one end of the second N-type impurity doped region is connected to a second electrode, for a surge protector with shunt holes to input current from the first electrode and output current from the second electrode, or for a surge protector with shunt holes to input current from the second electrode and output current from the first electrode; The spacing between adjacent first diversion holes is equal, and the width of the first diversion hole in the middle of the first N-type impurity doping region is smaller than the width of the first diversion holes at both ends of the first N-type impurity doping region; or, the spacing between adjacent second diversion holes is equal, and the width of the first diversion hole in the middle of the second N-type impurity doping region is smaller than the width of the second diversion holes at both ends of the second N-type impurity doping region.

4. The surge protector with a diversion hole according to claim 3, characterized in that, The shape of the first diversion hole is circular or rectangular, and the shape of the second diversion hole is circular or rectangular.

5. The surge protector with a diversion hole according to claim 3, characterized in that, The shape of the first diversion hole is square or hexagonal, and the shape of the second diversion hole is square or hexagonal.

6. The surge protector with a diversion hole according to claim 5, characterized in that, The side length of the first diversion hole and the side length of the second diversion hole are both set values.

7. A surge protector with a diversion hole, characterized in that, It includes: An N-type substrate, which includes: A first N-type impurity doping region disposed at one end of the N-type substrate. First diversion holes are provided inside the first N-type impurity doping region, and a spacing is provided between adjacent first diversion holes. The first diversion holes are used to disperse current; A second N-type impurity doping region disposed at the other end of the N-type substrate. Second diversion holes are provided inside the second N-type impurity doping region, and a spacing is provided between adjacent second diversion holes. The second diversion holes are used to disperse current; A P-type impurity doping region disposed in the middle of the N-type substrate, one end of which is connected to the first N-type impurity doping region and the other end of which is connected to the second N-type impurity doping region; A first electrode is connected to one end of the first N-type impurity doping region, and a second electrode is connected to one end of the second N-type impurity doping region, for a surge protector with diversion holes to input current from the first electrode and output current from the second electrode, or for a surge protector with diversion holes to input current from the second electrode and output current from the first electrode; The bottom end of the first N-type impurity doping region is stepped, and the depth of the first diversion hole in the middle of the first N-type impurity doping region is greater than the depth of the first diversion holes at both ends of the first N-type impurity doping region, or, the bottom end of the second N-type impurity doping region is stepped, and the depth of the second diversion hole in the middle of the second N-type impurity doping region is greater than the depth of the second diversion holes at both ends of the second N-type impurity doping region.

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