A method for preparing an LED sight and a method for preparing a bracket

Abstract

The present invention provides a method for preparing an LED aimer, wherein multiple luminous areas are processed on a chip; the chip is cut and the film is poured onto a conductive film; the photoelectric performance of the chip is detected, and abnormal products are eliminated, and then the good chips of the same gear are transferred to the blue film; the chip is fixed in the solid crystal area and welded; the pad of each luminous area is welded to the pad of the bracket; the UV film is attached to the luminous area of ​​the chip and solid crystal is pressed; glue is applied on the gold wire, and then an oven is used to complete the curing of the glue; the chip is cut, de-glued, and tested and packaged. In the present invention, a specific ratio of glue is designed to wrap the gold wire to prevent light from irradiating the gold, and a substance is added to the glue to make the surface matte, reduce the reflection of the aiming light, and ensure that the gold wire does not reflect the red light. In addition, the core luminous area on the surface of the chip is covered with glue to ensure high cleanliness of the core luminous area of ​​the red dot, thereby improving the performance and reliability of the aiming device.

Description

Technical Field

[0001] The present invention relates to the technical field of LED packaging, and in particular to a method for preparing an LED sight and a method for preparing a bracket. Background Art

[0002] The "three-point-one-line" aiming method is a commonly used shooting aiming method. Its basic principle is that the three points of the human eye pupil center, the sight center, and the target center are in a straight line to guide the shooting weapon to aim and hit accurately. Conventional sights are equipped with a center point, a cross, a center point and other indicating structures at the aiming center to indicate the center point of the sight. Since this type of sight will block the line of sight due to the indicating structure, it is rarely used in advanced shooting weapons. Later, relevant designers developed a glass marking sight, which printed marks such as the center point or crosshairs on the transparent glass to indicate the center point of the sight. This aiming system has improved the shooting accuracy to a certain extent. However, the glass marking sight is difficult to observe because the marks are small and thin, especially in low-light environments. It makes it difficult for designers to align the sight with the center, resulting in increased aiming time or reduced shooting accuracy. Summary of the Invention

[0003] The main purpose of the present invention is to provide a method for preparing an LED sight and a method for preparing a bracket, aiming to improve the technical problems of long aiming time and low aiming accuracy in the prior art.

[0004] To achieve the above object, the present invention provides a method for preparing an LED sight, comprising the following steps:

[0005] Processing multiple light-emitting areas on the chip;

[0006] Cutting the chip and pouring the film onto the conductive film;

[0007] Detect the photoelectric performance of the chip, remove abnormal products, and then transfer the good chips of the same level to the blue film;

[0008] Fixing the chip in the die-bonding area and performing welding;

[0009] Soldering the pad of each light-emitting area to the pad of the bracket;

[0010] Attaching the UV film to the light emitting area of ​​the chip and performing die bonding pressing;

[0011] Apply glue on the gold wire and then use an oven to cure the glue;

[0012] The chips are cut, debonded, and packaged for testing.

[0013] Optionally, the step of fixing the chip in the die-bonding area and performing welding includes:

[0014] Cleaning the surface of the stent using plasma to remove impurities and organic matter, exposing a clean metal surface;

[0015] Applying soldering flux on the bracket and fixing the chip on the die-bonding area;

[0016] Solder is plated on the bottom of the chip, and a eutectic welding process is used to melt the solder on the bottom of the chip to form a eutectic layer with the gold plating on the surface of the bracket for firm welding.

[0017] Optionally, the step of welding the Pad of each light-emitting area to the pad of the bracket includes:

[0018] Implanting gold balls on the Pad of the chip;

[0019] Welding a welding point on the bracket;

[0020] Lead wires from the soldering points on the bracket to the Pad of the chip.

[0021] Optionally, glue is applied to the gold wire and then cured in an oven. The steps include:

[0022] Prepare silica gel according to the set ratio and vacuum stir to degas;

[0023] Use an automatic dispensing machine to apply glue on the gold wire;

[0024] Bake in an oven at 100°C for one hour, then at 150°C for two hours.

[0025] Optionally, the steps of cutting, debonding, and testing and packaging the chip include:

[0026] The chip was cut into individual devices and then baked in an oven at 50° C. for one hour;

[0027] Use UV lamp to irradiate the product to remove the adhesion of the UV film, and then use a die-bonding machine to remove the UV film by suction;

[0028] Using an active meter, testing the luminous performance of each of the luminous areas in turn, and screening out defective products;

[0029] The qualified products are placed in self-adsorption boxes and packaged for storage.

[0030] In addition, to achieve the above-mentioned object, the present invention also provides a method for preparing a bracket of an LED sight, comprising the following steps:

[0031] Drilling holes in a ceramic substrate;

[0032] Cleaning and drying the punched ceramic substrate;

[0033] performing a linear ion source etching process on the cleaned surface of the ceramic substrate and the inner wall surface of the hole;

[0034] forming a titanium layer and a copper layer in sequence on the surface of the ceramic substrate and the inner wall surface of the hole after ion source etching;

[0035] Eliminating pores or bubbles that do not have a conductive effect on the surface of the ceramic substrate and the inner wall of the hole;

[0036] A dry film is applied to the ceramic substrate, and then exposure and development are performed on the surface of the ceramic substrate using a photomask to obtain a circuit pattern;

[0037] Electroplating copper on the circuit pattern of the ceramic substrate and filling the holes to form copper circuits;

[0038] Tinning the surface of the copper circuit;

[0039] removing the dry film remaining on the surface of the ceramic substrate;

[0040] removing the titanium layer and the copper layer on the surface of the ceramic substrate except for the copper circuit;

[0041] The tin layer on the surface of the copper circuit is removed.

[0042] Optionally, the thickness of the electroplated copper is 65±15 um.

[0043] Optionally, the warping of the bracket is ≤0.50 mm, and the roughness is ≤0.50 um.

[0044] In the technical solution provided by the present invention, multiple light-emitting areas are processed on the chip; the chip is cut and the film is poured onto the conductive film; the photoelectric performance of the chip is tested, and abnormal products are eliminated, and then the good chips of the same gear are transferred to the blue film; the chip is fixed in the solid crystal area and welded; the pad of each light-emitting area is welded to the pad of the bracket; the UV film is attached to the light-emitting area of ​​the chip and solid crystal pressed; glue is applied to the gold wire and then an oven is used to complete the curing of the glue; the chip is cut, de-glued, and tested and packaged. In the present invention, a specific ratio of glue is designed to wrap the gold wire to prevent light from irradiating the gold, and a substance is added to the glue to make the surface matte, thereby reducing the reflection of the aiming light and ensuring that the gold wire does not reflect the red light. In addition, the core light-emitting area on the surface of the chip is covered with glue to ensure the high cleanliness of the red dot core light-emitting area, thereby improving the performance and reliability of the aiming device. BRIEF DESCRIPTION OF THE DRAWINGS

[0045] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the following briefly introduces the drawings required for use in the embodiments or the description of the prior art. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on the structures shown in these drawings without paying any creative work.

[0046] Figure 1 A schematic flow chart of an embodiment of a method for preparing an LED sight provided by the present invention;

[0047] Figure 2 The present invention provides a schematic flow chart of an embodiment of a method for preparing a bracket for an LED sight.

[0048] The purpose, features and advantages of the present invention will be further described with reference to the accompanying drawings and in conjunction with the embodiments. DETAILED DESCRIPTION

[0049] To make the objectives, technical solutions, and advantages of the present invention more clearly understood, the present invention is further described in detail below in conjunction with specific embodiments and with reference to the accompanying drawings. The technical solutions in the present invention are clearly and completely described. Obviously, the embodiments described are part of the embodiments of the present invention, not all of them. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making creative efforts are within the scope of protection of the present invention.

[0050] Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings. However, it should be understood that these descriptions are exemplary only and are not intended to limit the scope of the present invention. In the following detailed description, for ease of explanation, many specific details are set forth to provide a comprehensive understanding of embodiments of the present invention. However, it is apparent that one or more embodiments may also be implemented without these specific details. In addition, in the following description, descriptions of known structures and technologies are omitted to avoid unnecessary confusion of the concept of the present invention.

[0051] The terms used herein are only for describing specific embodiments and are not intended to limit the present invention. The terms "comprise", "include", etc. used herein indicate the presence of the features, steps, operations and / or components, but do not exclude the presence or addition of one or more other features, steps, operations or components.

[0052] All terms used herein (including technical and scientific terms) have the meanings commonly understood by those skilled in the art unless otherwise defined. It should be noted that the terms used herein should be interpreted as having a meaning consistent with the context of this specification and should not be interpreted in an idealized or overly rigid manner.

[0053] When expressions such as “at least one of A, B, and C, etc.” are used, they should generally be interpreted in accordance with the meaning commonly understood by those skilled in the art (e.g., “a system having at least one of A, B, and C” should include but is not limited to systems having A alone, B alone, C alone, A and B, A and C, B and C, and / or A, B, and C, etc.). When expressions such as “at least one of A, B, or C, etc.” are used, they should generally be interpreted in accordance with the meaning commonly understood by those skilled in the art (e.g., “a system having at least one of A, B, or C” should include but is not limited to systems having A alone, B alone, C alone, A and B, A and C, B and C, and / or A, B, and C, etc.).

[0054] It should be noted that if a directional indication is involved in an embodiment of the present invention, the directional indication is only used to explain the relative position relationship, movement status, etc. between the components in a certain specific posture. If the specific posture changes, the directional indication will also change accordingly.

[0055] In addition, if there are descriptions involving "first", "second", etc. in the embodiments of the present invention, the descriptions of "first", "second", etc. are only for descriptive purposes and cannot be understood as indicating or implying their relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined as "first" and "second" may explicitly or implicitly include at least one of such features. In addition, the meaning of "and / or" appearing throughout the text includes three parallel schemes. Taking "A and / or B" as an example, it includes scheme A, or scheme B, or a scheme in which A and B are satisfied at the same time. In addition, the technical solutions between the various embodiments can be combined with each other, but it must be based on the ability of ordinary technicians in this field to implement it. When the combination of technical solutions is mutually contradictory or cannot be implemented, it should be deemed that such a combination of technical solutions does not exist and is not within the scope of protection required by the present invention.

[0056] In the description of the present invention, it should be noted that the terms "upper", "lower", "top", "bottom", "inside", "outside", etc., indicating orientations or positional relationships, are based on the orientations or positional relationships shown in the accompanying drawings. They are only for the convenience of describing the present invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation. Therefore, they cannot be understood as limiting the present invention.

[0057] In the description of the present invention, it should be noted that, unless otherwise expressly specified or limited, the terms "mounted," "connected," and "connected" should be understood in a broad sense. For example, they may refer to fixed, detachable, or integral connections; mechanical or electrical connections; direct or indirect connections through an intermediate medium; and internal communication between two components. Those skilled in the art will understand the specific meanings of the above terms in the present invention based on the specific circumstances.

[0058] In addition, in the description of the present invention, unless otherwise specified, "plurality", "multiple roots" and "multiple groups" mean two or more.

[0059] The following will clearly and completely describe the technical solutions in the embodiments of the present invention in conjunction with the accompanying drawings. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. All other embodiments obtained by ordinary technicians in this field based on the embodiments of the present invention without making any creative efforts shall fall within the scope of protection of the present invention.

[0060] The "three-point-one-line" aiming method is a commonly used shooting aiming method. Its basic principle is that the three points of the human eye pupil center, the sight center, and the target center are in a straight line to guide the shooting weapon to aim and hit accurately. Conventional sights are equipped with a center point, a cross, a center point and other indicating structures at the aiming center to indicate the center point of the sight. Since this type of sight will block the line of sight due to the indicating structure, it is rarely used in advanced shooting weapons. Later, relevant designers developed a glass marking sight, which printed marks such as the center point or crosshairs on the transparent glass to indicate the center point of the sight. This aiming system has improved the shooting accuracy to a certain extent. However, the glass marking sight is difficult to observe because the marks are small and thin, especially in low-light environments. It makes it difficult for designers to align the sight with the center, resulting in increased aiming time or reduced shooting accuracy.

[0061] In summary, a sighting system that facilitates observation and identification has broad application prospects. As we all know, LEDs are a new type of clean, energy-saving light source. They are compact, easy to operate, have a reliable lifespan, and can emit light in a specific wavelength band. Using red epitaxial wafers with a wavelength of 600-630nm, thin-film processing is used to produce LED chips with red dot, red cross, and red circle aiming light zones. Combined with relevant packaging processes, this creates a marking aiming device that can be placed within a riflescope. When using a weapon, the shooter can quickly and accurately aim using the red illuminated crosshair mark. This can be used at night without any ambient light, greatly increasing the accuracy, firing speed, and environmental adaptability of the weapon.

[0062] In view of this, the present invention provides a method for preparing an LED sight and a method for preparing a bracket, aiming to solve the above problems. Figure 1 , Figure 1 This is a flow chart of an embodiment of a method for preparing an LED sight according to the present invention. In one embodiment, the method for preparing an LED sight comprises the following steps:

[0063] Step S10: processing a plurality of light-emitting areas on the chip.

[0064] Step S20: cutting the chip and pouring the film onto the conductive film.

[0065] Step S30: Detect the photoelectric performance of the chips, remove abnormal chips, and then transfer the good chips of the same level to the blue film.

[0066] Step S40: fixing the chip in the die-bonding area and performing welding.

[0067] Step S50: welding the Pad of each light-emitting area to the pad of the bracket.

[0068] Step S60: attaching a UV film to the light emitting area of ​​the chip and performing die bonding and pressing.

[0069] Step S70: Apply glue on the gold wire and then use an oven to cure the glue.

[0070] Step S80: cutting and debonding the chip, and then testing and packaging the chip.

[0071] In this embodiment, a 600-630nm GaAs epitaxial wafer is taken, and a thin-film lithography process is used to process the following 5-channel light-emitting areas on the chip, namely an outer red cross, an outer red circle, an inner red cross, an inner red circle, and an inner red dot. The inner red dot is the red dot at the center of the sight, and its luminous circle diameter should be greater than 10um to ensure sufficient indication brightness. Au20Sn80 solder with a thickness of 3.5-6um is evaporated on the back of the chip for packaging and welding to conduct electricity and dissipate heat. The chip thickness should be no less than 200um to ensure the stability of the physical structure. After the chip is cut open by laser, it is poured onto the conductive film, and the optoelectronic performance of the chip is fully tested. Then, a sorting device is used to remove abnormal products, and the good chips of the same level are transferred to the blue film for packaging and use. The optoelectronic performance of the chip is tested by an LED chip tester. The LED chip tester is a prior art, and the specific working principle will not be repeated here. Abnormal products are removed using an LED chip sorter. The tester measures and coordinates all the chips in a bin, and then the sorter accurately picks the chips of different bin levels as needed. Similarly, LED chip sorters are existing technology, so the specific working principles will not be elaborated here.

[0072] Furthermore, in this embodiment, UV film is processed into 1.2x1.2x0.3mm squares, placed on release film, and bonded to the LED chip's luminous area using a die bonder. A die bond press is then set to ensure the UV film adheres to the chip's luminous area. This step protects the luminous area during subsequent glue application, preventing contamination from exposure during the cutting process. Since the red LED is exposed throughout the entire packaging process, unprotected areas would inevitably be contaminated by glue powder and cutting residue. The independently developed UV film protection process ensures the cleanliness of the chip's luminous area, guaranteeing the device's luminous performance.

[0073] Furthermore, in this embodiment, step S40 includes:

[0074] Step S401: using plasma to clean the surface of the bracket to remove impurities and organic matter and expose a clean metal surface.

[0075] Step S402: applying soldering flux on the bracket and fixing the chip on the die-bonding area.

[0076] Step S403: Solder is plated on the bottom of the chip, and a eutectic welding process is used to melt the solder on the bottom of the chip to form a eutectic layer with the gold plating on the surface of the bracket for firm welding.

[0077] It's important to note that plasma cleaning machines operate mechanically as follows: During cleaning, a working gas is introduced into the machine, and the electromagnetic field creates plasma, which reacts physically and chemically with the surface. The physical reaction mechanism involves reactive particles bombarding the surface, releasing contaminants and ultimately being sucked away by a vacuum pump. The chemical reaction mechanism involves reactive particles reacting with contaminants to produce volatile substances, which are then sucked away by a vacuum pump, achieving the cleaning effect.

[0078] In this embodiment, the plasma cleaning machine uses plasma to clean the surface of the bracket, remove impurities and organic matter, expose the clean metal surface, and prepare for welding. It is commonly used in the pre-welding preparation process of semiconductor packaging. After cleaning, flux will be applied to the bracket, and then a high-precision crystal bonding machine will be used to apply flux and fix the chip in the crystal bonding area designed for the bracket (and a Zener diode is connected in parallel to each channel to protect the light-emitting channel from ESD). Then, a vacuum eutectic furnace is used with a peak temperature of 290-320°C to melt the gold-tin solder at the bottom of the chip, so that it forms a eutectic layer with the gold plating on the surface of the bracket for firm welding. The bottom of the chip is plated with Au80Sn20 solder through the chip process. The solder can melt at 290°C and form a liquid eutectic with Au, and then it can be firmly welded after cooling.

[0079] Furthermore, in this embodiment, step S50 includes the following steps:

[0080] Step S501: implanting gold balls into the Pad of the chip.

[0081] Step S502: welding a welding point on the bracket.

[0082] Step S503: Lead wires from the solder points on the bracket to the Pad of the chip.

[0083] In this embodiment, a fully automatic wire bonding machine and 1.0mil gold wire are used to weld each light-emitting channel chip Pad to the bracket pad. The wire bonding should use the "reverse wire bonding" mode of first planting the ball on the Pad, then welding a solder joint on the bracket, and finally leading the wire to the gold ball pre-planted on the Pad. Here, the process parameters of the gold wire bonding (wire bonding) machine are debugged to make the wire arc as straight as possible, and the highest point of the wire arc does not exceed 100um of the chip Pad to ensure that the coating height of the protective glue in the later stage meets the standards. It should be noted that ball planting is the implantation of gold balls, which is a process of gold wire bonding (wire bonding) process. This is very common in the field of packaging and belongs to the existing technology, so it will not be repeated here.

[0084] In addition, the positive wire: the wire arc direction is from the chip to the bracket. The reverse wire: the wire arc direction is from the bracket to the chip. In this embodiment, the advantage of the reverse wire is that the wire arc is low, so that the height of the protruding part of the gold wire on the front of the chip is less, the amount of glue used to protect the gold wire is also less, and the material on the surface of the chip is also less. The less and lower the things on the front of this product, the better, otherwise the reflection will be blurred easily, affecting the aiming.

[0085] Furthermore, in this embodiment, step S70 further includes the following steps:

[0086] Step S701: Prepare silica gel according to the set ratio and vacuum-stir and degas.

[0087] Step S702: Use an automatic dispensing machine to apply glue on the gold wire.

[0088] Step S703: Use an oven to bake at 100° C. for one hour and then at 150° C. for two hours.

[0089] It should be noted that the glue ratio is critical in this embodiment. In this embodiment, a two-component glue is used, using high-viscosity silicone rubber with AB components. Specifically, anti-diffusion powder, black dye, and graphene powder are mixed in a ratio of 1:1:0.045:0.5:2.5. After vacuum stirring and degassing, an automatic glue dispenser is used to apply thermally conductive matte black protective glue to the gold wire to protect it. The glue is then baked in an oven at 100°C for 1 hour and at 150°C for 2 hours to complete the glue curing.

[0090] It's understandable that AB glue refers to two-component glue. Two-component glues are generally more stable and require mixing before use. For example, 502 is a single-component glue that can be used straight out of the box. AB glue is a two-component glue. AB glue has high viscosity and is easy to shape, but has poor fluidity, as it can be molded into a desired shape through a dispensing process.

[0091] Among them, anti-diffusion powder: further reduces the fluidity of the glue, maintains the cured shape of the glue, and this substance can form a matte texture on the surface of the glue, making the outer surface of the glue rough and reducing light reflection. Black dye: black substances absorb all light and do not reflect any light. This dye turns the gold wire protective glue black, further reducing the reflection of the standard indicator red light. Graphene powder: First, it increases the thermal conductivity of the glue. Because the glue is an organic substance, it has poor thermal conductivity. This is a new type of super thermal conductive material. Mixing it into the glue can increase the heat dissipation capacity of the device, reduce the operating temperature, and improve reliability. This substance can also form a matte texture on the surface of the glue, making the outer surface of the glue rough and reducing light reflection.

[0092] Furthermore, in this embodiment, step S80 further includes the following steps:

[0093] Step S801: Cut the chip into individual devices, and then bake them in an oven at 50° C. for one hour.

[0094] Step S802: Use a UV lamp to irradiate the product to release the adhesiveness of the UV film, and then use a die-bonding machine to absorb and remove the UV film.

[0095] Step S803: using an active meter to test the luminous performance of each of the luminous areas in turn, and screening out defective products.

[0096] Step S804: Place qualified products in self-adsorption boxes for packaging and storage.

[0097] In this embodiment, a diamond synthetic blade and a water jet cutting machine are used to cut the product into single devices, and then an oven is used at 50°C for 1 hour to remove moisture. A UV lamp irradiation box with WP=365nm is used to irradiate the product to release the adhesion of the UV square film, and then a crystal bonding machine is used to absorb and remove the UV square film. An active meter is used to test the luminous performance of the five channels in sequence, and defective products are screened out. Good products are placed in a self-adsorption box, packaged, and put into storage. At this point, the product has been packaged into a device, and the solder pads of the device are relatively large, so testing is easier. Use the test leads connected to the equipment to pierce the solder pads of the device, and the device can emit light. Because the chip has been fully tested before packaging, it is sufficient to test that the device can emit light, there is no leakage, and the electrical parameters are normal (the packaging process will not change the optical parameters).

[0098] In addition, see Figure 2 In order to provide support for the LED aimer, we also provide a method for preparing a bracket. In this embodiment, the method for preparing the bracket of the LED aimer further includes the following steps:

[0099] Step S001: drilling holes on a ceramic substrate;

[0100] Step S002: cleaning and drying the punched ceramic substrate;

[0101] Step S003: performing a linear ion source etching process on the cleaned surface of the ceramic substrate and the inner wall surface of the hole;

[0102] Step S004: forming a titanium layer and a copper layer in sequence on the surface of the ceramic substrate and the inner wall surface of the hole after ion source etching;

[0103] Step S005: eliminating pores or bubbles that do not have a conductive effect on the surface of the ceramic substrate and the inner wall of the hole;

[0104] Step S006: applying a dry film on the ceramic substrate, and then performing exposure and development processing on the surface of the ceramic substrate using a photomask to obtain a circuit pattern;

[0105] Step S007: electroplating copper on the circuit pattern of the ceramic substrate and filling the holes to form copper circuits;

[0106] Step S008: plating tin on the surface of the copper circuit;

[0107] Step S009: removing the dry film remaining on the surface of the ceramic substrate;

[0108] Step S010: removing the titanium layer and the copper layer on the surface of the ceramic substrate except for the copper circuit;

[0109] Step S011: removing the tin layer on the surface of the copper circuit.

[0110] In this embodiment, through-holes are provided on a ceramic substrate primarily composed of aluminum nitride. A 0.3-0.5mm thick aluminum nitride sheet is used using a direct copper plating (DPC) process to grow a support for the aforementioned chip. Using a 0.50mm aluminum nitride ceramic sheet, the overall thickness is 0.63±0.10mm. The number of components in the layout is 25×20=500, and the dimensions are 109.2×54.5mm. Double-sided circuitry is plated with copper of 65±15µm, with the same thickness along the process edges. No solder mask or markings are required. The PCS internal line width and spacing are controlled to a ±0.05mm tolerance, while the external dimensions are controlled to a ±0.1mm tolerance. Surface treatment: nickel-palladium-gold (nickel ≥ 3µm, palladium ≥ 0.05µm, gold ≥ 0.05µm). Finally, the support's warpage is controlled to ≤0.50mm, and its roughness ≤0.50µm. A 0.2mm cut-off is reserved for panel shipment.

[0111] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit them. Although the present invention has been described in detail with reference to the above embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the above embodiments, or make equivalent replacements for some of the technical features therein. However, these modifications or replacements do not deviate the essence of the corresponding technical solutions from the spirit and scope of the technical solutions of the embodiments of the present invention. The specific embodiments described above further illustrate the purpose, technical solutions and beneficial effects of the present invention. It should be understood that the above description is only a specific embodiment of the present invention and is not intended to limit the present invention. Any modifications, equivalent replacements, improvements, etc. made within the spirit and principles of the present invention should be included in the scope of protection of the present invention.

Claims

1. A method for preparing an LED sight, characterized in that: The steps include: Processing multiple light-emitting areas on the chip; Cutting the chip and pouring the film onto the conductive film; Detect the photoelectric performance of the chip, remove abnormal chips, and then transfer the good chips of the same level to the blue film; Fixing the chip in the die-bonding area and performing welding; Soldering the pad of each light-emitting area to the pad of the bracket by gold wire; Attaching the UV film to the light-emitting area of ​​the chip and performing die bonding pressing; Apply glue on the gold wire, and then use an oven to cure the glue, wherein the glue is a thermally conductive matte black protective glue, which is formed by using a two-component glue and adding anti-diffusion powder, black dye, and graphene powder; The chip is cut, debonded, and tested and packaged, wherein the debonding step includes: irradiating the product with a UV lamp to release the adhesion of the UV film, and then using a die bonding machine to remove the UV film by suction.

2. The method for preparing an LED sight according to claim 1, characterized in that: The steps of fixing the chip in the die bonding area and performing welding include: Using plasma to clean the surface of the stent to remove impurities and organic matter and expose a clean metal surface; Applying solder flux on the bracket, plating solder on the bottom of the chip, and fixing the chip on the die-bonding area; The eutectic welding process is used to melt the solder at the bottom of the chip so as to form a eutectic layer with the gold plating on the surface of the bracket for firm welding.

3. The method for preparing an LED sight as claimed in claim 1, characterized in that: The step of welding the Pad of each light-emitting area to the welding pad of the bracket includes: Implanting a gold ball on the Pad of the chip; Welding a welding point on the bracket; Lead wires are connected from the soldering points on the bracket to the Pad of the chip.

4. The method for preparing an LED sight according to claim 1, wherein: Apply glue to the gold wire and then use an oven to cure the glue. The steps include: Prepare silica gel according to the set ratio and vacuum stir to degas; Use an automatic glue dispenser to apply glue on the gold wire; Use an oven to bake at 100°C for one hour, then at 150°C for two hours.

5. The method for preparing an LED sight as claimed in claim 1, characterized in that: The steps of cutting, degumming, and testing and packaging the chip include: The chip was cut into individual devices and then baked in an oven at 50° C. for one hour; Use UV lamp to irradiate the product to release the adhesion of the UV film, and then use a die-bonding machine to remove the UV film by suction; Using an active meter, testing the luminous performance of each luminous area in turn, and screening out defective products; Place qualified products in self-adsorption boxes and package them for storage.

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