A standard calibration fixture for a crystal ingot bonding stage and a method for bonding 12-inch semiconductor crystal ingots.

Abstract

A standard calibration frame for a crystal ingot bonding stage and a method for bonding 12-inch semiconductor crystal ingots are disclosed. The standard calibration frame includes a base that can be installed on the workpiece board station of the crystal ingot bonding stage and two calibration crossbars fixed on the base. The base is rectangular, and the two calibration crossbars are spaced apart along the length of the base. The distance from the end of any calibration crossbar to the longitudinal center line of the base is equal, and the line connecting the ends of the two calibration crossbars on the same side of the base's length direction is parallel to the length direction of the base. This invention can eliminate the influence of equipment wear and tear on the crystal ingot bonding accuracy, ensuring the quality of the final product.

Description

Technical Field

[0001] This invention relates to the field of semiconductor wafer processing equipment, specifically a standard calibration frame for a crystal rod bonding stage and a method for bonding 12-inch semiconductor crystal rods. Background Technology

[0002] In the process of bonding semiconductor ingots to crystal trolleys, an ingot bonding stage is usually required. After the crystal trolley is placed on the rotary lifting platform of the bonding stage, the ingot is supported by four rollers on the stage. Finally, the angle of the rotary lifting platform is adjusted according to the required α angle, and the platform is raised to bond the crystal trolley to the ingot using resin. Since the bonding of the crystal trolley affects the subsequent ingot cutting, and the bonding accuracy affects the crystal orientation of the final wafer, precision control of the ingot bonding is necessary to ensure the crystal orientation accuracy of the product.

[0003] In the existing technology, the parallelism and spacing of the rollers that affect the bonding accuracy of crystal rods can only be guaranteed by the precision of the crystal rod bonding stage equipment itself. However, due to factors such as roller wear, slide rail wear, and certain gaps in the slide rail, there will be deviations after the rollers are fixed, which will affect the precision of the crystal rod bonding process and thus affect the quality of the final product. Summary of the Invention

[0004] The present invention aims to provide a standard calibration frame for a crystal ingot bonding stage and a method for bonding 12-inch semiconductor crystal ingots, which can eliminate the impact of equipment wear and tear on crystal ingot bonding accuracy and ensure the quality of the final product.

[0005] To solve the above technical problems, the specific solution adopted by the present invention is as follows: a standard calibration frame for adjusting the roller spacing of a crystal rod bonding stage, comprising a base that can be installed on the workpiece plate station of the crystal rod bonding stage and two calibration crossbars fixed on the base. The base is rectangular, and the two calibration crossbars are distributed at intervals along the length direction of the base. The distance from the end of any calibration crossbar to the longitudinal center line of the base is equal, and the line connecting the ends of the two calibration crossbars on the same side of the length direction of the base is parallel to the length direction of the base.

[0006] Preferably, supports are fixed at both ends of the base along its length for mounting corresponding calibration crossbars. The supports have through holes for mounting the calibration crossbars and threaded holes communicating with the through holes are opened at the top of the supports. Set screws for fixing the calibration crossbars are installed in the threaded holes.

[0007] Preferably, the calibration crossbar is cylindrical and the end face of the calibration crossbar is flat.

[0008] Preferably, the base is equipped with a lifting handle.

[0009] A method for bonding 12-inch semiconductor crystal rods involves sequentially calibrating the parallelism of the rollers and the spacing between the rollers on the bonding stage before bonding the semiconductor crystal rods.

[0010] The method for calibrating the parallelism of the rollers is as follows: Set the dial indicator stand on the reference platform of the crystal rod bonding stage, move the roller to one end of the guide post, point the probe of the dial indicator on the roller and read the value, then move the roller to the other end of the guide post and read the value again. The difference between the two readings is the parallelism of the rollers. When the parallelism of all rollers is less than 0.58mm, proceed to the next step of roller spacing calibration. When the parallelism of any roller is greater than 0.58mm, repair or replace it.

[0011] The method for calibrating the roller spacing is as follows: Rotate the rotary lifting platform of the crystal rod bonding stage to 0°, install the base of any of the aforementioned standard calibration frames onto the workpiece plate position of the crystal rod bonding stage, control the rotary lifting platform to rise so that the calibration crossbar is located in the middle of the roller, move the roller towards the calibration crossbar and make all rollers close to the corresponding ends of the calibration crossbar, finally lock the roller position and continue to raise the rotary lifting platform to remove the standard calibration frame, thus completing the roller spacing calibration.

[0012] Preferably, when calibrating the parallelism of the rollers themselves, the dial indicator holder is set on the side of the reference platform of the crystal rod bonding stage to calibrate the parallelism of one side of the rollers, and then the dial indicator is rotated 180° to calibrate the parallelism of the other side of the rollers.

[0013] Preferably, when calibrating the parallelism of the roller itself, the sliding distance of the roller along the guide post during the two readings is not less than 200mm.

[0014] Preferably, during roller spacing calibration, the lifting platform is raised manually by jogging the rotation to raise the calibration crossbar to the height where the roller is located in the middle.

[0015] By using the standard calibration frame and semiconductor ingot bonding method of this invention to bond semiconductor ingots, the adverse effects of the loss factors of the original ingot bonding stage are eliminated, ensuring the parallelism and roller spacing of the rollers during the bonding process. This effectively improves the crystal orientation level of the ingot bonding and thus ensures product accuracy. Attached Figure Description

[0016] Figure 1 This is a schematic diagram of a standard calibration frame for a crystal rod bonding stage according to the present invention;

[0017] Figure 2 This is a schematic diagram showing the state during the parallelism calibration of the roller itself in a semiconductor crystal rod bonding method according to the present invention.

[0018] Figure 3This is a schematic diagram showing the state during roller spacing calibration in a semiconductor crystal rod bonding method according to the present invention.

[0019] The markings in the diagram are: 1. Support, 2. Calibration crossbar, 3. Tightening screw, 4. Base, 5. Lifting handle, 6. Guide column, 7. Reference platform, 8. Instrument holder, 9. Roller, 10. Probe, 11. Dial indicator, 12. Rotary lifting platform. Detailed Implementation

[0020] like Figure 1 As shown, the present invention provides a standard calibration frame for adjusting the roller spacing of a crystal rod bonding stage, mainly comprising a base 4, two supports 1 fixed on the base 4, and calibration crossbars 2 correspondingly fixed on the supports 1. The base 4 is rectangular and can be placed in the workpiece plate station of the crystal rod bonding stage, so that calibration can be performed by the standard calibration frame before crystal rod bonding. The two supports 1 are respectively fixed at both ends of the base 4 along its length. Each support 1 has through holes distributed along the width direction of the base 4. The calibration crossbars 2 are installed in the through holes and locked by the tightening bolts set on the top of the supports 1. The single calibration crossbar 2 is distributed along the width direction of the base 4. The two calibration crossbars 2 are of equal length and the center of the calibration crossbars 2 falls on the longitudinal center line of the base 4, so that the line connecting the left end and the line connecting the right end of the two calibration crossbars 2 are parallel to the length direction of the base 4.

[0021] The length of the calibration crossbar 2 is equal to the theoretical spacing between the two opposing rollers 9 on the crystal rod bonding stage being calibrated during production. In this embodiment, the calibration crossbar 2 is fixed by passing through the through hole in the support 1 and then tightening it with the set screw 3. This allows the position of the calibration crossbar 2 to be adjusted before tightening the set screw 3, ensuring that both ends of the calibration crossbar 2 are of equal length to the center line of the base 4, i.e., the center of the calibration crossbar 2 is located on the center line of the base 4 before fixing the position of the calibration crossbar 2.

[0022] Furthermore, the calibration crossbar 2 has a certain outer diameter and its end face is flat. After the calibration crossbar 2 is placed between the two rollers 9, it is convenient to calibrate the spacing between the rollers 9 by pushing the rollers 9 and making them contact the end face of the calibration crossbar 2. In order to facilitate the placement and removal of the standard calibration frame, a lifting handle 5 is also provided on the base 4 between the two supports 1 in this invention.

[0023] The present invention discloses a 12-inch semiconductor ingot bonding method, the main concept of which is to sequentially perform roller 9 self-parallelism calibration and roller 9 spacing calibration on the ingot bonding stage before semiconductor ingot bonding. The roller 9 self-parallelism calibration is achieved using a dial indicator 11, and the roller 9 spacing calibration is achieved using the aforementioned standard calibration frame. Specifically:

[0024] The method for calibrating the parallelism of roller 9 itself is as follows: Figure 2As shown, dial indicator 11 is fixed on the indicator holder 8, and the indicator holder 8 is referenced to the side of the reference stage 7 on the left side of the crystal rod bonding stage. The lower left roller 9 is moved to... Figure 2 After positioning the dial indicator 11 at the indicated location, place the probe 10 of the dial indicator 11 onto the roller 9 and take a reading. Then move the roller 9 to the other end of the guide post 6 and take another reading. The distance between the two measuring points is 200 mm. The difference in the dial indicator 11 value between the two measuring points, i.e., the parallelism, should be 0.58 mm. Test sequentially at the locations indicated... Figure 2 After checking the parallelism of the upper left roller 9, rotate the dial indicator 8 so that the dial indicator 11 faces the two rollers 9 on the right, and then complete the parallelism test of the two right rollers 9 in sequence. When the parallelism of all rollers 9 is less than 0.58mm, proceed to the next step of roller 9 spacing calibration. When the parallelism of any roller 9 is greater than 0.58mm, repair or replace it.

[0025] The method for calibrating the roller spacing is as follows: Figure 3 As shown, first, rotate the rotary lifting platform 12 of the crystal rod bonding stage to 0°, and install the base 4 of the aforementioned standard calibration frame onto the workpiece plate position of the crystal rod bonding stage. Position the left side of the base 4 of the standard calibration frame using the left reference platform 7. Then, control the rotary lifting platform 12 to rise manually or inching until the calibration crossbar 2 is positioned in the middle of the roller 9. Move the roller 9 towards the calibration crossbar 2 and ensure all rollers 9 are in close contact with their corresponding ends. Finally, lock the position of the rollers 9 and continue to raise the rotary lifting platform 12 to remove the standard calibration frame, thus completing the roller 9 spacing calibration.

[0026] After the bonding station has been calibrated as described above, bonding can be carried out according to the conventional crystal rod bonding process and the calculated crystal rod deflection angle.

Claims

1. A method for bonding a 12-inch semiconductor ingot, characterized in that: Before bonding semiconductor crystal rods, the parallelism of the rollers (9) and the spacing of the rollers (9) are calibrated sequentially on the crystal rod bonding stage. The method for calibrating the parallelism of the roller (9) is as follows: Set the dial indicator (11) frame (8) on the reference platform (7) of the crystal rod bonding stage, move the roller (9) to one end of the guide post (6), point the probe (10) of the dial indicator (11) on the roller (9) and read the value, then move the roller (9) to the other end of the guide post (6) and read the value. The difference between the two readings is the parallelism of the roller (9). When the parallelism of all rollers (9) is less than 0.58 mm, proceed to the next step of roller (9) spacing calibration. When the parallelism of any roller (9) is greater than 0.58 mm, repair or replace it. The method for calibrating the roller (9) spacing is as follows: Rotate the rotating lifting platform (12) of the crystal rod bonding stage to 0°, and use a standard calibration frame to complete the calibration of the roller (9) spacing. The standard calibration frame includes a base (4) that can be installed on the workpiece plate station of the crystal rod bonding stage and two calibration crossbars (2) fixed on the base (4). The base (4) is rectangular, and the two calibration crossbars (2) are distributed at intervals along the length direction of the base (4). The distance from the end of any calibration crossbar (2) to the longitudinal center line of the base (4) is equal, and the two calibration crossbars (2) are located at... The lines connecting the ends on the same side of the base (4) along the length direction are parallel to the length direction of the base (4). The base (4) of the standard calibration frame is installed on the workpiece plate position of the crystal rod bonding stage. The rotary lifting platform (12) is controlled to rise so that the calibration crossbar (2) is located in the middle of the roller (9). The roller (9) is moved toward the calibration crossbar (2) and all rollers (9) are pressed against the corresponding ends of the calibration crossbar (2). Finally, the position of the roller (9) is locked and the rotary lifting platform (12) is raised to remove the standard calibration frame, thus completing the roller (9) spacing calibration.

2. The method for bonding a 12-inch semiconductor ingot according to claim 1, characterized in that: When calibrating the parallelism of the roller (9), the dial indicator (11) is placed on the side of the reference platform (7) of the crystal rod bonding stage to calibrate the parallelism of one side of the roller (9). Then the dial indicator (11) is rotated 180° to calibrate the parallelism of the other side of the roller (9).

3. The method for bonding a 12-inch semiconductor ingot according to claim 1, characterized in that: When calibrating the parallelism of the roller (9), the sliding distance of the roller (9) along the guide post (6) during the two readings shall not be less than 200mm.

4. The method for bonding a 12-inch semiconductor ingot according to claim 1, characterized in that: When calibrating the spacing of the rollers (9), the lifting platform (12) is raised manually by jogging, so that the calibration crossbar is raised to the height of the middle position of the rollers (9).

5. The method for bonding a 12-inch semiconductor ingot according to claim 1, characterized in that: At both ends of the base (4) along the length direction, there are fixed supports (1) for the corresponding calibration crossbar (2) to be installed. The supports (1) have through holes for the calibration crossbar (2) to be installed, and a threaded hole communicating with the through hole is opened on the top of the supports (1). Set screws for fixing the calibration crossbar (2) are installed in the threaded hole.

6. The method for bonding a 12-inch semiconductor ingot according to claim 1, characterized in that: The calibration crossbar (2) is cylindrical, and the end face of the calibration crossbar (2) is flat.

7. The method for bonding a 12-inch semiconductor ingot according to claim 1, characterized in that: The base (4) is equipped with a lifting handle (5).

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