Self burn-in test system of data storage device and method thereof

Abstract

A self-burn-in test system and method for a data storage device, wherein the self-burn-in test system includes a test carrier and a test machine. The self-burn-in test method includes: checking a hardware setting and a state of the data storage device and loading a self-burn-in firmware to the data storage device; installing the data storage device on a high-low temperature test machine through an adapter interface to initialize the self-burn-in firmware and perform a self-burn-in test; checking the hardware setting and the state of the data storage device, reading a result of the self-burn-in test to determine a grade of the data storage device; and checking the hardware setting and the state of the data storage device, loading a mass production firmware to the data storage device, and checking the grade of the data storage device. Thus, when an error occurs in loading the mass production firmware, the test result and the grade are not lost.

Description

Technical Field

[0001] This invention relates to a burn-in test for a data storage device, and more particularly to a self-burn-in test system and method for a data storage device. Background Technology

[0002] Traditional data storage devices such as flash memory load mass production firmware after the self-burn-in test program is completed. However, if a power outage occurs during the loading of the mass production firmware, causing an error or damage to the loading of the mass production firmware, all test results of the self-burn-in test program will be unreadable, resulting in the loss of all test results.

[0003] For data storage devices loaded with mass-produced firmware, the number of corrupted data blocks in the test results will affect the performance of writing data to the data storage device, the efficiency of garbage collection, the level of the Write Amplifier Indicator (WAI), and the data storage device's rating, thus affecting the data storage device's rating. Therefore, a technology for accurately evaluating the rating of data storage devices is needed. Summary of the Invention

[0004] This invention provides a self-burn-in test system and method for a data storage device, which avoids the drawback that if the data storage device encounters a power outage while loading the mass-production firmware after the self-burn-in test program is completed, resulting in an error or damage to the loading of the mass-production firmware, all test results of the self-burn-in test program will be lost.

[0005] The self-burn-in testing method for a data storage device provided by this invention is applicable to a self-burn-in testing system. The self-burn-in testing system includes a test carriage and a test platform, wherein the test platform is coupled to the test carriage. The test carriage carries the data storage device. The self-burn-in testing method includes the following operations: the test platform checks the hardware settings and status of the data storage device and loads the self-burn-in firmware onto the data storage device via the test carriage; the data storage device is installed on the high and low temperature test platform via an interface to initialize the self-burn-in firmware and perform a self-burn-in test; the test platform checks the hardware settings and status of the data storage device and reads the results of the self-burn-in test to determine the level of the data storage device via the test carriage; and the test platform checks the hardware settings and status of the data storage device, loads the mass-production firmware onto the data storage device, and checks the level of the data storage device via the test carriage.

[0006] The self-burn-in test system of the data storage device provided by the present application comprises a test carrier and a test machine. The test carrier is used to load the data storage device. The test machine is coupled to the test carrier. The self-burn-in test method performed by the self-burn-in test system comprises the following steps: the test machine checks the hardware settings and states of the data storage device through the test carrier and loads self-burn-in firmware into the data storage device; the data storage device is installed on a high-low temperature test machine through an adapter interface to initialize the self-burn-in firmware and perform self-burn-in test; the test machine checks the hardware settings and states of the data storage device through the test carrier, reads the results of the self-burn-in test to determine the grade of the data storage device; and the test machine checks the hardware settings and states of the data storage device through the test carrier, loads the mass production firmware into the data storage device, and checks the grade of the data storage device.

[0007] The present application changes the order of loading the mass production firmware and reading the results of the self-burn-in test to determine the grade of the data storage device, so that the defect that all test results of the self-burn-in test program cannot be read out and all test results of the self-burn-in test program are lost when the mass production firmware loading is wrong or damaged due to power failure of the system after the self-burn-in test program is completed can be avoided.

[0008] In order to make the above and other objects, features and advantages of the present application more apparent, embodiments of the present application are described below in detail with reference to the accompanying drawings. BRIEF DESCRIPTION OF DRAWINGS

[0009] Figure 1 A schematic diagram of a self-burn-in test system provided by an embodiment of the present application;

[0010] Figure 2 A schematic diagram of a data storage device provided by an embodiment of the present application;

[0011] Figure 3 A schematic diagram of a bare die provided by an embodiment of the present application;

[0012] Figure 4 A schematic diagram of a storage matrix provided by an embodiment of the present application;

[0013] Figure 5 A schematic diagram of a super block provided by an embodiment of the present application;

[0014] Figure 6 A flowchart of a self-burn-in test method provided by an embodiment of the present application;

[0015] Figure 7 A flowchart of reading the results of the self-burn-in test to determine the grade of the data storage device provided by an embodiment of the present application;

[0016] Figure 8 A flowchart of reading results of a self-burn-in test to determine a grade of a data storage device, according to another embodiment of the present invention; and

[0017] Figure 9 A diagram of calculating a total number of bad super blocks in a data storage device, according to an embodiment of the present invention. DETAILED DESCRIPTION

[0018] Referring to Figure 1FIG. 1 is a schematic diagram of a self-burn-in test system according to an embodiment of the present disclosure. The self-burn-in test system 1 includes a test carrier 2 and a test handler 3. The test carrier 2 is selectively connected to the test handler 3 and communicates with the test handler 3 through a specific communication standard, which can include, but is not limited to, a Serial Advanced Technology Attachment (SATA) standard, a Universal Serial Bus (USB) standard, and a Peripheral Component Interconnect Express (PCIe) standard. The test carrier 2 includes a first control device 21 and one or more slots (not shown) for loading data storage devices 5. When the data storage devices 5 are loaded in the slots, the data storage devices 5 are coupled to the first control device 21. The first control device 21 can include, but is not limited to, a microprocessor or a central processing unit (CPU). In addition, the test carrier 2 can include a read-only memory (not shown) for storing a program code, and the first control device 21 executes the program code to control the access of the data storage devices 5. The data storage devices 5 can include, but are not limited to, various embedded storage devices conforming to an embedded Multi Media Card (eMMC) standard or a Universal Flash Storage (UFS) standard. The test handler 3 includes a second control device 31, a storage device 32, and an input / output device 33. The second control device 31 is coupled to the storage device 32 and the input / output device 33. The storage device 32 is used to store a self-burn-in firmware and a mass production firmware of the data storage devices 5, and the input / output device 33 is used to display information related to the self-burn-in test of the data storage devices 5 and provide an operation interface for a tester to operate the test handler 3. In addition, the second control device 31 can selectively load the self-burn-in firmware and the mass production firmware to the data storage devices 5 and grade the data storage devices 5 according to the operation of the tester. The second control device 31 can include, but is not limited to, a microprocessor or a CPU.The storage device 32 can include, but is not limited to, a portable memory device such as a memory card conforming to one of the SD / MMC, CF, MS, XD, or UFS standards, a hard disk drive (HDD), a solid state drive (SSD), and / or various embedded storage devices conforming to the UFS and eMMC standards, respectively. The input / output device 33 can include, but is not limited to, an output device such as a light emitting diode (LED) screen, a cathode ray tube (CRT) screen, a liquid crystal display (LCD) screen, etc., and an input device such as a keyboard, a mouse, and / or a touch panel, etc.

[0019] Referring to Figures 2-5, respectively, are schematic diagrams of a data storage device 5, a die, a plane, and a super block according to an embodiment of the present application. The data storage device 5 includes a control unit 51 and a data storage medium 52, where the data storage medium 52 can be a non-volatile memory such as a flash memory, a magnetoresistive random access memory (MRAM), a ferroelectric random access memory (FRAM), a phase-change memory (PCM), a spin-transfer torque magnetoresistive random access memory (STT-RAM or STT-MRAM), a resistive random access memory (ReRAM), or a memristor capable of storing data for a long time. The data storage medium 52 can include a plurality of dies D0, D1, D2, …, D(s-1). The control unit 51 enables at least one die D0, D1, D2, …, D(s-1) to be accessed using a chip enable (CE) pin. Each die D0, D1, D2, …, D(s-1) includes a plurality of planes PLO, PL1, PL2, …, PL(t-1). Each plane PLO, PL1, PL2, …, PL(t-1) includes a plurality of blocks B0, B1, B2, …, B(z-1). Each block B0, B1, B2, …, B(z-1) includes a plurality of pages P0, P1, P2, …, P(n-1). Each page P0, P1, P2, …, P(n-1) includes a plurality of data columns having a data area and a spare area. Each super block SB0, SB1, SB2, …, SB(z-1) is composed of blocks in the same position in each plane of each die of the data storage medium 52, for example, the super block SB0 is composed of all blocks B0 in all planes PLO, PL1, PL2, …, PL(t-1) of each die D0, D1, D2, …, D(s-1), the super block SB1 is composed of all blocks B1 in all planes PLO, PL1, PL2, …, PL(t-1) of each die D0, D1, D2, …, D(s-1), and the other super blocks SB2, …, SB(z-1) are composed in the same manner, and thus are not described herein. In addition, n, t, s, and z in the above are positive integers greater than 1.

[0020] Please refer to Figure 6A flowchart of the self-burn-in test method provided by an embodiment of the present application is shown in FIG. 1. In step S1, the second control device 31 checks the hardware configuration and status of the data storage device 5 and loads the self-burn-in firmware into the data storage device 5 via the first control device 21 of the test carrier 2. The hardware configuration and status of the data storage device 5 checked by the second control device 31 can include, but is not limited to, the identification (ID) of the data storage device 5, the number of dies, the hardware version of the embedded multi media card (EMMC) and its status and functions, and the current firmware version, for the purpose of checking whether the hardware and functions of the data storage device 5 are normal. Then, the second control device 31 loads the self-burn-in firmware into the data storage device 5. The tester can perform the action of loading the self-burn-in firmware into the data storage device 5 via the user interface displayed by the input / output device 33 to perform parameter setting for the self-burn-in firmware, such as performing several cycles, whether to retest, etc.

[0021] In step S3, the data storage device 5 is initialized and performs the self-burn-in test via the adapter interface (not shown) installed on the high-low temperature test machine (not shown). The adapter interface is a multi-port circuit board for installing a plurality of data storage devices 5, and the initialization means that the high-low temperature test machine provides power to the data storage device 5 via the adapter interface, provides a clock signal to the data storage device 5, and causes the data storage device 5 to enter the boot mode. In this way, the self-burn-in test is performed on the data storage device 5 to record the results of the self-burn-in test of the data storage device 5. In addition, it should be noted that the results of the self-burn-in test of the data storage device 5 are stored in a block of the data storage device 5, so that when the data storage device 5 is removed from the adapter interface and reinstalled in the slot of the test carrier 2 after the self-burn-in test of the data storage device 5 is completed, the second control device 31 can read the results of the self-burn-in test via the first control device 21.

[0022] In step S5, the second control device 31 checks the hardware configuration and status of the data storage device 5 and reads the results of the self-burn-in test to determine the grade of the data storage device 5 via the first control device 21 of the test carrier 2. The results of the self-burn-in test include the numbers of all the defective blocks in the data storage device 5. Then, the second control device 31 can calculate the total number of defective blocks in the data storage device 5 according to the numbers of all the defective blocks in the data storage device 5, and determine the grade of the data storage device 5 accordingly. In another embodiment, the second control device 31 can calculate the total number of defective blocks in each storage matrix of each die in the data storage device 5 according to the numbers of all the defective blocks in the data storage device 5, and then calculate the total number of defective super blocks in the data storage device 5, and determine the grade of the data storage device 5 accordingly.

[0023] In step S7, the second control device 31 checks the hardware configuration and status of the data storage device 5, loads the mass production firmware into the data storage device 5, and checks the grade of the data storage device 5 by testing the first control device 21 of the carrier 2. The hardware configuration and status of the data storage device 5 checked by the second control device 31 are intended to confirm whether the hardware configuration and status of the data storage device 5 are correct.

[0024] Referring to Figure 7 The flowchart of reading the results of the self-burn-in test to determine the grade of the data storage device according to an embodiment of the present application is shown in FIG. 5. The reading of the results of the self-burn-in test by the second control device 31 in step S5 to determine the grade of the data storage device 5 includes the following operations. In step Sll, the second control device 31 determines whether the total number of defective blocks in the data storage device 5 is less than or equal to a first threshold value. The total number of defective blocks in the data storage device 5 is equal to the number of defective blocks newly added to the data storage device 5 after the self-burn-in test plus the number of defective blocks in the data storage device 5 at the time of factory shipment. It should be noted that the first threshold value can be defined by the hardware and process of the data storage device 5 by those skilled in the art.

[0025] In step S13, when it is determined that the total number of defective blocks in the data storage device 5 is less than or equal to the first threshold value, it is determined whether the number of defective blocks newly added to the data storage device 5 after the self-burn-in test is less than or equal to a second threshold value. Preferably, the second threshold value is 0, i.e., the number of defective blocks newly added to the data storage device 5 after the self-burn-in test is preferably 0, and thus the total number of defective blocks in the data storage device 5 only includes the number of defective blocks in the data storage device 5 at the time of factory shipment. It should be noted that the second threshold value can be defined by the hardware and process of the data storage device 5 by those skilled in the art, and thus the present application is not limited to the above-mentioned values.

[0026] In step S15, when it is determined that the number of defective blocks newly added to the data storage device 5 after the self-burn-in test is less than or equal to the second threshold value, it is determined that the data storage device 5 belongs to the first grade. That is, when it is determined that the data storage device 5 belongs to the first grade, it means that the total number of defective blocks in the data storage device 5 is the least, and thus the efficiency of writing data into the data storage device 5, the efficiency of garbage collection, and the reduction of the write amplification indicator (WAI) can be improved.

[0027] In step S17, when the number of the newly added bad blocks of the data storage device 5 after the self burn-in test is greater than the second critical value, the data storage device 5 is judged to belong to the second level. That is, compared with the data storage device 5 of the first level, the data storage device 5 of the second level has more bad blocks, so the performance of writing data to the data storage device 5 of the second level, the efficiency of garbage collection, and the effect of the write amplification indicator (WAI) are worse.

[0028] In step S19, when the total number of the bad blocks in the data storage device 5 is greater than the first critical value, it is judged whether the number of the newly added bad blocks of the data storage device 5 after the self burn-in test is less than or equal to the second critical value.

[0029] In step S21, when the number of the newly added bad blocks of the data storage device 5 after the self burn-in test is less than or equal to the second critical value, the data storage device 5 is judged to belong to the third level. That is, compared with the data storage device 5 of the second level, the data storage device 5 of the third level has more bad blocks, so the performance of writing data to the data storage device 5 of the third level, the efficiency of garbage collection, and the effect of the write amplification indicator (WAI) are worse.

[0030] In step S23, when the number of the newly added bad blocks of the data storage device 5 after the self burn-in test is greater than the second critical value, the data storage device 5 is judged to belong to the fourth level. That is, compared with the data storage device 5 of the third level, the data storage device 5 of the fourth level has more bad blocks, so the performance of writing data to the data storage device 5 of the fourth level, the efficiency of garbage collection, and the effect of the write amplification indicator (WAI) are worse.

[0031] Referring to Figure 8 The flowchart of reading the result of the self burn-in test to judge the level of the data storage device is provided by another embodiment of the present application. The second control device 31 of step S5 reads the result of the self burn-in test to judge the level of the data storage device 5, which includes the following operation: in step S31, the second control device 31 judges whether the total number of the bad super blocks in the data storage device 5 is less than or equal to the third critical value. It can be noted that the person skilled in the art can define the value of the third critical value according to the hardware and process of the data storage device 5.

[0032] In an embodiment, when a block is judged to be a bad block, the super block containing the bad block is also judged to be a bad super block. The total number of the bad super blocks in the data storage device 5 is the number of the bad super blocks excluding the number of good super blocks composed of good blocks of different storage matrices of all the bad super blocks. For example, when the data storage device 5 is a 3D NAND flash memory, the total number of the bad super blocks in the data storage device 5 is the number of the bad super blocks excluding the number of good super blocks composed of good blocks of different planes, strings, and memory cells of all the bad super blocks. Figure 9As an example, assume that data storage device 5 includes two bare dies D0 and D1, each of which includes two storage matrices PL0 and PL1. In the results of the self-burn-in test of data storage device 5, the super blocks include three damaged super blocks SB(i), SB(i+1), and SB(i+2). Among the three damaged super blocks SB(i), SB(i+1), and SB(i+2), there are good blocks G1-G7 and damaged blocks B1-B5. Control device 4 selects one group of good blocks from different storage matrices, such as (G1, G2, G5, G3), (G6, G2, G5, G3), (G1, G4, G5, G3), (G6, G4, G5, G3), (G1, G2, G7, G3), (G6, G2, G7, G3), (G1, G4, G7, G3), and (G6, G4, G7, G3), to form one good super block. In other words, the original number of damaged superblocks was 3, and the good blocks in different storage matrices of these 3 damaged superblocks can form 1 good superblock. Therefore, the total number of damaged superblocks is 3-1=2.

[0033] In another embodiment, the total number of damaged superblocks in the data storage device 5 is equal to the maximum number of damaged blocks in each storage matrix of each bare die. Specifically, the second control device 31 can find a storage matrix with the maximum number of damaged blocks based on the damaged block number, and use the number of damaged blocks in this storage matrix as the total number of damaged superblocks. Figure 9 As an example, the three damaged superblocks SB(i), SB(i+1), and SB(i+2) contain good blocks G1-G7 and damaged blocks B1-B5, respectively. The second control device 31 selects the storage matrix with the most damaged blocks according to the number of the damaged blocks. For example, the storage matrix PL1 in the bare die D1 has two damaged blocks B3 and B5. The number of damaged blocks in this storage matrix PL1 is used as the total number of damaged superblocks, that is, two damaged superblocks.

[0034] Next, as Figure 8 As shown, in step S33, when it is determined that the total number of damaged superblocks in the data storage device 5 is less than or equal to the third threshold, it is determined whether the number of newly added damaged blocks after the self-burn-in test of the data storage device 5 is less than or equal to the second threshold. Preferably, the second threshold is 0. It should be noted that those skilled in the art can define the value of the second threshold based on the hardware and manufacturing process of the data storage device 5, therefore, this application is not limited to the above value.

[0035] In step S35, when the number of newly added bad blocks of the data storage device 5 after the self burn-in test is less than or equal to the second threshold value, it is determined that the data storage device 5 belongs to the first level. That is, when the data storage device 5 belongs to the first level, it means that the total number of bad blocks of the data storage device 5 is the least, so that the effects of improving the efficiency of writing data to the data storage device 5, improving the efficiency of garbage collection, and reducing the write amplification index (WAI) can be achieved.

[0036] In step S37, when the number of newly added bad blocks of the data storage device 5 after the self burn-in test is greater than the second threshold value, it is determined that the data storage device 5 belongs to the second level. That is, compared with the data storage device 5 of the first level, the data storage device 5 of the second level has more bad blocks, so that the effects of writing data to the data storage device 5 of the second level, the efficiency of garbage collection, and the write amplification index (WAI) are poorer.

[0037] In step S39, when the total number of bad super blocks in the data storage device 5 is greater than the third threshold value, it is determined whether the number of newly added bad blocks of the data storage device 5 after the self burn-in test is less than or equal to the second threshold value.

[0038] In step S41, when the number of newly added bad blocks of the data storage device 5 after the self burn-in test is less than or equal to the second threshold value, it is determined that the data storage device 5 belongs to the third level. That is, compared with the data storage device 5 of the second level, the data storage device 5 of the third level has more bad blocks, so that the effects of writing data to the data storage device 5 of the third level, the efficiency of garbage collection, and the write amplification index (WAI) are poorer.

[0039] In step S43, when the number of newly added bad blocks of the data storage device 5 after the self burn-in test is greater than the second threshold value, it is determined that the data storage device 5 belongs to the fourth level. That is, compared with the data storage device 5 of the third level, the data storage device 5 of the fourth level has more bad blocks, so that the effects of writing data to the data storage device 5 of the fourth level, the efficiency of garbage collection, and the write amplification index (WAI) are poorer.

[0040] In summary, the present application changes the loading of mass production firmware and reads the results of self-burn-in test to judge the order of the level of data storage device, so as to avoid the data storage device to load the mass production firmware after the completion of the self-burn-in test program, in case of power failure, resulting in the mass production firmware loading error or damage, which will result in the self-burn-in test program all test results cannot be read out, and then lose the self-burn-in test program all test results. At the same time, the present application provides a method for accurately judging the number of damaged super blocks and damaged blocks to improve the efficiency of writing data to the data storage device, the efficiency of garbage collection, the effect of reducing the write amplifier indicator (WAI), and the classification of the data storage device.

[0041] The above is only the preferred embodiment of the present application, and does not limit the present application in any form. Although the present application has been disclosed as above, it is not intended to limit the present application. Any skilled person in the art can make some changes or modifications to the above disclosed methods and technical contents to obtain equivalent embodiments with equivalent changes, without departing from the technical solution of the present application. Any simple modification, equivalent change and modification of the above embodiments made according to the technical essence of the present application are still within the scope of the technical solution of the present application.

Claims

1. A method of self-burn-in testing of a data storage device, the method comprising: A self-burning test system includes a test carrier and a test machine, wherein the test machine is coupled to the test carrier, and the test carrier loads the data storage device. The self-burning test method includes the following operations: The test machine checks a hardware setting and a state of the data storage device through the test carrier and loads a self-burning firmware on the data storage device; The data storage device is installed on a high-low temperature test machine through an adapter interface to initialize the self-burning firmware and perform a self-burning test; The test machine checks the hardware setting and the state of the data storage device through the test carrier, reads the result of the self-burning test to determine a grade of the data storage device; The test machine checks the hardware setting and the state of the data storage device through the test carrier, loads a mass production firmware on the data storage device, and checks the grade of the data storage device. Reading the result of the self-burning test to determine the grade of the data storage device includes:

2. The burn-in test method of claim 1, wherein, determining whether a total number of damaged blocks in the data storage device is less than or equal to a first threshold value; when determining that the total number of damaged blocks in the data storage device is less than or equal to the first threshold value, determining whether a number of damaged blocks newly added after the self-burning test is less than or equal to a second threshold value; and when determining that the number of damaged blocks newly added after the self-burning test is less than or equal to the second threshold value, determining that the data storage device belongs to a first grade; wherein the total number of damaged blocks in the data storage device is equal to the number of damaged blocks newly added after the self-burning test plus a number of damaged blocks when the data storage device is shipped. Reading the result of the self-burning test to determine the grade of the data storage device includes:

3. The self-burn-in test method of claim 2, wherein, when determining that the number of damaged blocks newly added after the self-burning test is greater than the second threshold value, determining that the data storage device belongs to a second grade. Reading the result of the self-burning test to determine the grade of the data storage device includes:

4. The burn-in test method of claim 3, wherein, when determining that the total number of damaged blocks in the data storage device is greater than the first threshold value, determining whether the number of damaged blocks newly added after the self-burning test is less than or equal to the second threshold value; and when determining that the number of damaged blocks newly added after the self-burning test is less than or equal to the second threshold value, determining that the data storage device belongs to a third grade. Reading the result of the self-burning test to determine the grade of the data storage device includes:

5. The burn-in test method of claim 4, wherein, when determining that the number of damaged blocks newly added after the self-burning test is greater than the second threshold value, determining that the data storage device belongs to a fourth grade. The second threshold value is 0.

6. The burn-in test method of claim 2, wherein, Reading the result of the self-burning test to determine the grade of the data storage device includes:

7. The self-burn-in test method as described in claim 1, characterized in that, determining whether a total number of damaged super blocks in the data storage device is less than or equal to a first threshold value; when determining that the total number of damaged super blocks in the data storage device is less than or equal to the first threshold value, determining whether a number of damaged blocks newly added after the self-burning test is less than or equal to a second threshold value; and when determining that the number of damaged blocks newly added after the self-burning test is less than or equal to the second threshold value, determining that the data storage device belongs to a first grade. when the number of the damaged blocks newly added after the self-burn-in test is determined to be less than or equal to the second threshold value, determining that the data storage device belongs to a first grade. The super block is composed of blocks in the same position in each storage matrix of each die of the data storage medium in the data storage device.

8. The burn-in test method of claim 7, wherein, The reading of the result of the self-burn-in test to determine the grade of the data storage device includes: when the number of the damaged blocks newly added after the self-burn-in test is determined to be greater than the second threshold value, determining that the data storage device belongs to a second grade.

9. The burn-in test method of claim 8, wherein, The reading of the result of the self-burn-in test to determine the grade of the data storage device includes: when the total number of the damaged super blocks in the data storage device is determined to be greater than the first threshold value, determining whether the number of the damaged blocks newly added after the self-burn-in test is less than or equal to a second threshold value; and when the number of the damaged blocks newly added after the self-burn-in test is determined to be less than or equal to the second threshold value, determining that the data storage device belongs to a third grade.

10. The burn-in test method of claim 9, wherein, The reading of the result of the self-burn-in test to determine the grade of the data storage device includes: when the number of the damaged blocks newly added after the self-burn-in test is determined to be greater than the second threshold value, determining that the data storage device belongs to a fourth grade.

11. The burn-in test method of claim 7, wherein the step of applying a voltage to the first and second electrodes comprises applying a voltage to the first and second electrodes to cause the first and second electrodes to emit electrons. The total number of the damaged super blocks in the data storage device is the number of the damaged super blocks excluding the number of good super blocks composed of good blocks of different storage matrices of all the damaged super blocks.

12. The burn-in test method of claim 7, wherein the step of applying a voltage to the first and second electrodes comprises applying a voltage to the first and second electrodes to cause the first and second electrodes to emit electrons. The total number of the damaged super blocks in the data storage device is equal to the maximum number of the damaged blocks that a storage matrix has in all the damaged super blocks.

13. A self-burn-in test system of a data storage device, comprising: a test carrier for loading the data storage device; and a test machine coupled to the test carrier; wherein a self-burn-in test method performed by the self-burn-in test system includes: the test machine checking a hardware setting and a state of the data storage device through the test carrier and loading a self-burn-in firmware to the data storage device; installing the data storage device on a high-low temperature test machine through an adapter interface to initialize the self-burn-in firmware and perform a self-burn-in test; the test machine checking the hardware setting and the state of the data storage device through the test carrier, reading a result of the self-burn-in test to determine a grade of the data storage device; and the test machine checking the hardware setting and the state of the data storage device through the test carrier, loading a mass production firmware to the data storage device, and checking the grade of the data storage device.

14. The burn-in test system of claim 13, wherein the controller is further configured to: determine a number of the plurality of test devices that have failed; and determine a number of the plurality of test devices that have passed. 15 The reading of the result of the self-burn-in test to determine the grade of the data storage device includes: determining whether a total number of damaged blocks in the data storage device is less than or equal to a first threshold value; when the total number of the damaged blocks in the data storage device is determined to be less than or equal to the first threshold value, determining whether the number of the damaged blocks newly added after the self-burn-in test is less than or equal to a second threshold value; and When it is determined that the number of the defective blocks newly added after the self-burn-in test is less than or equal to the second threshold value, it is determined that the data storage device belongs to a first grade. The total number of the defective blocks in the data storage device is equal to the number of the defective blocks newly added after the self-burn-in test plus the number of the defective blocks when the data storage device is shipped.

15. The self-burn-in test system as described in claim 14, characterized in that, The reading of the result of the self-burn-in test to determine the grade of the data storage device includes: When it is determined that the number of the defective blocks newly added after the self-burn-in test is greater than the second threshold value, it is determined that the data storage device belongs to a second grade.

16. The burn-in test system of claim 15, wherein the controller is further configured to: determine a number of the plurality of test devices that have failed; and determine a number of the plurality of test devices that have passed. The reading of the result of the self-burn-in test to determine the grade of the data storage device includes: When it is determined that the total number of the defective blocks in the data storage device is greater than the first threshold value, it is determined whether the number of the defective blocks newly added after the self-burn-in test is less than or equal to the second threshold value; and When it is determined that the number of the defective blocks newly added after the self-burn-in test is less than or equal to the second threshold value, it is determined that the data storage device belongs to a third grade.

17. The self-burn-in test system as described in claim 16, characterized in that, The reading of the result of the self-burn-in test to determine the grade of the data storage device includes: When it is determined that the number of the defective blocks newly added after the self-burn-in test is greater than the second threshold value, it is determined that the data storage device belongs to a fourth grade.

18. The self-burn-in test system as described in claim 14, characterized in that, The second threshold value is 0.

19. The self-burn-in test system as described in claim 13, characterized in that, The reading of the result of the self-burn-in test to determine the grade of the data storage device includes: It is determined whether the total number of defective super blocks in the data storage device is less than or equal to a first threshold value; When it is determined that the total number of the defective super blocks in the data storage device is less than or equal to the first threshold value, it is determined whether the number of the defective blocks newly added after the self-burn-in test is less than or equal to a second threshold value; and When it is determined that the number of the defective blocks newly added after the self-burn-in test is less than or equal to the second threshold value, it is determined that the data storage device belongs to a first grade; The super block is composed of blocks in the same position in each storage matrix of each die of a data storage medium in the data storage device.

20. The burn-in test system of claim 19, wherein the controller is further configured to: determine a number of the plurality of test devices that have failed; and determine a number of the plurality of test devices that have passed. The reading of the result of the self-burn-in test to determine the grade of the data storage device includes: When it is determined that the number of the defective blocks newly added after the self-burn-in test is greater than the second threshold value, it is determined that the data storage device belongs to a second grade.

21. The burn-in test system of claim 20, wherein the controller is further configured to: The reading of the result of the self-burn-in test to determine the grade of the data storage device includes: When it is determined that the total number of the defective super blocks in the data storage device is greater than the first threshold value, it is determined whether the number of the defective blocks newly added after the self-burn-in test is less than or equal to the second threshold value; and When it is determined that the number of the defective blocks newly added after the self-burn-in test is less than or equal to the second threshold value, it is determined that the data storage device belongs to a third grade.

22. The burn-in test system of claim 21, wherein the controller is further configured to: determine a number of the plurality of test devices that have failed; and determine a number of the plurality of test devices that have passed. The reading of the result of the self-burn-in test to determine the grade of the data storage device includes: When it is determined that the number of the defective blocks newly added after the self-burn-in test is greater than the second threshold value, it is determined that the data storage device belongs to a fourth grade.

23. The self-burn-in test system as described in claim 19, characterized in that, The total number of the damaged super blocks in the data storage device is the number of the damaged super blocks excluding the number of good super blocks combined from good blocks of different storage matrices of all the damaged super blocks.

24. The burn-in test system of claim 19, wherein the controller is further configured to: determine a number of the plurality of test devices that have failed; and determine a number of the plurality of test devices that have passed. 25 The total number of the damaged super blocks in the data storage device is equal to the maximum number of the damaged blocks that a storage matrix has in all the damaged super blocks.

Images