Substrate processing apparatus and substrate processing method

Abstract

To achieve the desired processing performance when performing liquid processing on a film of a peripheral portion. A substrate processing apparatus includes a substrate holding portion, a rotation drive portion for rotating the substrate holding portion about a rotation axis, and a release portion for releasing a processing liquid to a liquid landing point provided at a peripheral portion of the substrate. The release portion includes a plurality of nozzles capable of releasing the same processing liquid, at least one of a first angle θ and a second angle φ of one of the nozzles and another of the nozzles being different from each other. A circle is defined with a center at a foot of a perpendicular drawn from the liquid landing point to the rotation axis, with a radius of a line segment connecting the foot and the liquid landing point, and on a plane orthogonal to the rotation axis, and a tangent line to the circle at the liquid landing point is defined. An angle formed by a straight line connecting a foot of a perpendicular drawn from a processing liquid release point to a front surface of the substrate and the liquid landing point and the tangent line to the circle at the liquid landing point is defined as the first angle θ, and an angle formed by the straight line connecting the foot of the perpendicular and the liquid landing point and a straight line connecting the release point and the liquid landing point is defined as the second angle φ.

Description

TECHNICAL FIELD

[0001] The present application relates to a substrate processing apparatus and a substrate processing method. BACKGROUND

[0002] In the manufacture of semiconductor devices, a bevel cutting process of locally removing a thin film such as an oxide film present at a peripheral portion of a substrate is performed by rotating a substrate such as a semiconductor wafer (hereinafter simply referred to as "wafer") horizontally held in a state of being kept around a vertical axis, and supplying a processing liquid such as a chemical liquid to the peripheral portion of the substrate.

[0003] Patent Literature 1 discloses a substrate processing apparatus capable of suppressing variation in the cutting width of a bevel cutting process of a peripheral portion of a substrate. The substrate processing apparatus includes a variation amplitude acquisition section and a release control section. The variation amplitude acquisition section acquires information on the variation amplitude of the deformation amount of the peripheral portion of the substrate. The release control section controls the release angle and the release position of the processing liquid with respect to the peripheral portion from a processing liquid release section in correspondence with the above information acquired by the variation amplitude acquisition section.

[0004] PRIOR ART LITERATURE

[0005] PATENT LITERATURE

[0006] Patent Literature 1: Japanese Patent Application Publication No. 2018-46105 SUMMARY

[0007] PROBLEMS TO BE SOLVED BY THE INVENTION

[0008] The present application provides a substrate processing technology capable of achieving a desired processing performance when a film at a peripheral portion is subjected to liquid processing.

[0009] MEANS FOR SOLVING THE PROBLEMS

[0010] According to one embodiment of the present invention, there is provided a substrate processing apparatus which is a substrate processing apparatus capable of performing liquid processing on a peripheral portion of a front surface of a substrate using a processing liquid, characterized by comprising: a substrate holding portion for holding the substrate; a rotation drive portion for rotating the substrate holding portion around a rotation axis; and a release portion for releasing the processing liquid toward a liquid landing point provided on the peripheral portion of the front surface of the substrate, defining a circle centered on a foot of a perpendicular drawn from the liquid landing point toward the rotation axis, with a line segment connecting the foot of the perpendicular and the liquid landing point as a radius, and located on a plane orthogonal to the rotation axis, and defining a tangent line of the circle at the liquid landing point, provided that an angle formed by a straight line connecting a foot of a perpendicular drawn from a release point of the processing liquid toward the front surface of the substrate and the liquid landing point, and the tangent line of the circle at the liquid landing point is a first angle θ, and provided that an angle formed by the straight line connecting the foot of the perpendicular drawn from the release point of the processing liquid toward the front surface of the substrate and the liquid landing point, and a straight line connecting the release point and the liquid landing point is a second angle φ, the release portion includes a plurality of nozzles capable of releasing the same first processing liquid as the processing liquid, at least one of the first angle θ and the second angle φ of one nozzle and another nozzle of the plurality of nozzles being different from each other.

[0011] Effects of the Invention

[0012] According to the above-described embodiment, when performing liquid processing on the film of the peripheral portion, a desired processing performance can be achieved. BRIEF DESCRIPTION OF DRAWINGS

[0013] Figure 1 is a schematic longitudinal sectional view of an oblique angle etching apparatus which is one embodiment of a substrate processing apparatus.

[0014] Figure 2 is a diagram for explaining various parameters related to release of a processing liquid.

[0015] Figure 3 is a schematic diagram for explaining behavior of a processing liquid immediately after landing on a surface of a wafer which changes in correspondence with a surface state of the wafer.

[0016] Figure 4 is a schematic diagram for explaining behavior of a processing liquid immediately after landing on a surface of a wafer which changes in correspondence with a surface state of the wafer.

[0017] Figure 5 is a schematic diagram for explaining behavior of a processing liquid immediately after landing on a surface of a wafer which changes in correspondence with a surface state of the wafer.

[0018] Figure 6 is a schematic diagram for explaining a slope width.

[0019] Figure 7This is a schematic diagram illustrating methods for improving cutting precision.

[0020] Figure 8 This is a schematic diagram illustrating methods for improving cutting precision.

[0021] Figure 9 This is a schematic diagram illustrating an example of the structure of a nozzle attitude changing mechanism.

[0022] Figure 10 This is a schematic three-dimensional diagram showing the configuration of the nozzles in a specific example. Detailed Implementation

[0023] One embodiment of the substrate processing apparatus will be described with reference to the accompanying drawings.

[0024] Hereinafter, an oblique etching apparatus according to one embodiment of a substrate processing apparatus will be described with reference to the accompanying drawings. The oblique etching apparatus is an apparatus for removing unwanted film from the periphery of a circular substrate, i.e., a semiconductor wafer W (hereinafter simply referred to as "wafer"), to which a semiconductor device is to be formed, using a wet etching process. The periphery, which is the object to be etched in the oblique etching process, generally refers to the area from the APEX (outermost periphery of the edge bend) of the wafer W to approximately 5 mm inside (however, it is not limited to this range).

[0025] like Figure 1 As shown, the wet etching apparatus (hereinafter referred to as the "etching apparatus") 1 includes a rotary chuck (substrate holding and rotating section) 2, a processing cup-shaped section 4, and a processing fluid release section 6 (hereinafter referred to as the "release section"). The rotary chuck 2 holds the substrate to be processed, i.e., the wafer W, in a horizontal orientation and rotates it about a vertical axis. The processing cup-shaped section 4 surrounds the wafer W held by the rotary chuck 2 and is used to receive (recover) the processing fluid that spills from the wafer W. The release section 6 is used to release processing fluids such as processing fluid and processing gas into the wafer W held by the rotary chuck 2.

[0026] The rotary chuck 2, the processing cup-shaped section 4, and the release section 6 are housed within a housing 10. A cleaning gas introduction unit 12 (hereinafter referred to as "FFU (Fan Filter Unit)") is provided near the top of the housing 10. A drain port 41 for discharging the recovered processing liquid to the outside of the etching apparatus 1 and an exhaust port 42 for venting the internal space of the processing cup-shaped section 4 are provided at the bottom of the processing cup-shaped section 4. By venting the internal space of the processing cup-shaped section 4 via the exhaust port 42, cleaning gas (e.g., clean air) introduced from the FFU 12 can be introduced into the processing cup-shaped section 4. The cleaning gas is introduced into the processing cup-shaped section 4 while passing approximately radially outward near the periphery of the wafer W, thereby preventing droplets of processing liquid that have splashed from the wafer W from re-adhering to the wafer W.

[0027] The rotary chuck 2 includes a chuck portion (substrate holding portion) 21 configured as a vacuum chuck, and a rotation drive portion 22 for rotating the chuck portion 21 about a vertical axis. The lower surface (back surface) of the wafer W can be adsorbed to the upper surface of the chuck portion 21.

[0028] The releasing portion 6 has a nozzle 61 for releasing a processing fluid, a nozzle moving mechanism 62 for moving the nozzle 61, and a processing fluid supply mechanism (processing liquid supply mechanism) 63 for supplying the processing fluid to the nozzle 61. The processing fluid supply mechanism 63 can be configured from a tank, a processing fluid supply source such as a factory facility, a pipe for supplying the processing fluid from the processing fluid supply source to the nozzle 61, a flow meter provided in the pipe, an on-off valve, a flow control valve, and a flow adjusting device, and the like. As the processing fluid, a chemical liquid (etching liquid), a rinsing liquid, an organic solvent such as IPA (isopropyl alcohol) for drying assistance, a low-humidity gas (for example, dry air, nitrogen, and the like) can be exemplified. However, hereinafter, only a liquid (particularly, a chemical liquid, a rinsing liquid) will be described as the processing fluid released from the nozzle 61.

[0029] The nozzle moving mechanism 62 can at least adjust the radial direction position of the liquid landing point of the processing liquid released from the nozzle 61 on the front surface of the wafer W. The liquid landing point refers to the intersection of the central axis of the liquid column of the processing liquid released from the nozzle 61 and the front surface of the wafer W, and in Figure 2 is indicated by reference sign P. F

[0030] The releasing portion 6 is configured from two or more (for example, four) nozzles 61 provided at different positions in the circumferential direction of the wafer W. In addition, in Figure 1 the arrow extending obliquely downward from the nozzle 61 indicates the processing liquid released from the nozzle 61.

[0031] ​In the basic structure of the release section 6, a plurality of sets of release mechanism groups are provided, and each of the release mechanism groups is composed of one nozzle 61, one nozzle moving mechanism 62 attached to the one nozzle 61, and one processing liquid supply mechanism 63. The description of the functions of the etching device 1 described later is made on the premise of this basic structure. However, when there is no obstacle in achieving the functions described later, it is also possible that two or more processing liquid supply mechanisms 63 (for example, a processing liquid supply mechanism for supplying a chemical liquid and a processing liquid supply mechanism for supplying a rinsing liquid) are connected to one nozzle 61. Specifically, in order to achieve the release angle of the processing liquid from the nozzle 61 required for achieving a short slope width at the time of etching processing and in order to achieve the release angle of the processing liquid from the nozzle 61 required for achieving good rinsing particle performance (details will be described later) at the time of rinsing processing, it is the same. In this case, it is possible to adopt a structure in which the etching liquid and the rinsing liquid can be selectively released from the same nozzle 61. In addition, also when there is no obstacle in achieving the functions described later, it is possible to move two or more nozzles 61 by one nozzle moving mechanism 62 in common. In this case, two or more nozzles 61 are held by one nozzle holder in common. In addition, of course, it is also possible that, with respect to a plurality of nozzles 61 that supply the same processing liquid, the same processing liquid is supplied to each nozzle 61 via a plurality of processing liquid supply mechanisms 63 connected to one common processing liquid supply source.

[0032] As the detailed structure of the etching device 1, the structure disclosed in the application publication Japanese Patent Application Publication No. 2014-086638 (JP 2014-086638 A) of the applicant's prior application Japanese Patent Application No. 2012-235974 can be used. In the prior application, three nozzles are held by one nozzle holder in common, and the three nozzles are moved by one nozzle moving mechanism in common, but of course the above-described basic structure can be adopted in the prior application.

[0033] Next, with the case where the nozzle 61 releases a chemical liquid CHM (etching liquid) as a processing liquid as an example, the description will be made with reference to Figure 2 The various parameters for explaining the release conditions of the chemical liquid CHM released from the nozzle 61 to the front surface of the wafer W will be described.

[0034] In Figure 2 , the definitions of the respective reference numerals are as follows.

[0035] A X : The rotation axis of the wafer W.

[0036] WC: The intersection of the front surface of the wafer W and the rotation axis A X (the rotation center of the wafer W on the front surface of the wafer W).

[0037] P E: Release point of the chemical liquid CHM (release port of the nozzle 61)

[0038] P F : Landing point of the chemical liquid CHM on the front surface of the wafer W (intersection point where the central axis of the liquid column formed by the chemical liquid released from the nozzle 61 intersects with the front surface of the wafer W).

[0039] ω: Angular velocity of the wafer W.

[0040] r: Distance from the rotation center WC to the landing point P F .

[0041] L T : Tangent line at the landing point P F on the circumference of the circle having the radius "r" centered at the rotation center WC (the circle is located on the same plane as the front surface of the wafer W).

[0042] V T : Tangential direction velocity of the wafer W at the landing point P F (= ωr).

[0043] V C : Velocity of the chemical liquid CHM from the release point P E to the landing point P F (size of the velocity vector).

[0044] F1: Foot of the perpendicular line L E drawn from the release point P P1 to the front surface of the wafer W.

[0045] F2: Foot of the perpendicular line L T drawn from the foot F1 to the tangent line L P2 .

[0046] Second angle φ: Angle formed by the line segment P E P F and the line segment F1P F (including the angle formed by the plane of the front surface of the wafer W and the liquid column formed by the chemical liquid released from the nozzle 61).

[0047] First angle θ: Angle formed by the line segment F1P F and the line segment F2P F .

[0048] In addition, the tangential direction component (V TThe direction of the tangential component of the velocity vector of the chemical liquid CHM is preferably the same as the direction of rotation of the wafer W. When opposite to the direction of rotation of the wafer W, it is difficult to control the scattering (liquid splashing) of the chemical liquid CHM. However, when the control of the scattering of the chemical liquid CHM does not present a problem, the tangential component of the velocity vector of the chemical liquid CHM can also be opposite to the direction of rotation of the wafer W.

[0049] The above-described parameters are not limited to the case where the treatment liquid discharged from the nozzle 61 is a chemical liquid, but can be similarly defined in the case where it is another treatment liquid, such as a rinsing liquid.

[0050] When the nozzle moving mechanism 62 moves the nozzle 61 so that the landing point P F of the chemical liquid CHM is located at the position of the wafer W, the nozzle 61 is moved in a radial direction so that the landing point P F of the chemical liquid CHM is located at the position of the wafer W.

[0051] In the specific example described later, at least two, for example, four nozzles 61 are prepared in order to discharge the same treatment liquid (here, HF). It is preferable that at least one of the first angle θ and the second angle φ of any two nozzles 61 selected from among the plurality of nozzles 61 be different from each other. Furthermore, here, the "same treatment liquid" means a treatment liquid that is completely the same in terms of concentration, temperature, and the like.

[0052] The nozzle 61 capable of discharging a chemical liquid CHM at a first angle θ and a second angle φ required to achieve a treatment performance that is emphasized, in accordance with the "property of the wafer W itself or a film formed on the front surface of the wafer W (hereinafter, referred to as "landing portion property")" and the "treatment performance that is emphasized" in the vicinity of the landing point P F of the chemical liquid CHM.

[0053] As the above-described landing portion property, the following properties can be exemplified. For example, in the case where one or more films are formed on the front surface of the wafer W, the property or state of the film (for example, SiOx) located on the most surface side or the surface thereof. As the "property or state of the surface of the film", for example, the affinity (wettability) to the treatment liquid, the surface roughness (morphology), and the like can be exemplified. In addition, as the "property of the film itself", the etching rate by etching with an etching liquid in the case where the treatment liquid is an etching liquid can be exemplified. In the case where no film is formed on the front surface of the wafer (silicon wafer) W, the property of the front surface of the wafer W (the above-described wettability and the like), or the property of the wafer W itself (the above-described etching rate and the like) can be considered as the landing portion property.

[0054] As the processing performance, for example, a small amount of particles (few particles) (this is often referred to as "particle performance"), the ability to perform bevel etching with high cutting accuracy (high cutting accuracy), a small width of a slope (short slope width) of the outermost periphery of a film that is not etched and remains at the time of bevel etching, and the like can be exemplified. As the "processing performance that is emphasized", the processing performance that is considered to be the most important can be selected from among the processing performances exemplified here.

[0055] Further, regarding the particles, there are particles that are generated at the time of bevel etching (hereinafter referred to as "chemical liquid particles"), particles that are generated at the time of rinsing processing (hereinafter referred to as "rinsing particles"), and particles that are generated due to notch splashing (hereinafter referred to as "notch splashing particles"), and the details will be described later.

[0056] In the bevel liquid processing (peripheral portion processing) of the wafer W, the processing performances are often in a trade-off relationship with each other, and there are cases where it is difficult to determine the first angle θ and the second angle φ that can simultaneously achieve different processing performances. Here, the first angle θ and the second angle φ that first satisfy the "processing performance that is emphasized" are determined.

[0057] In the present embodiment, for example, the standard value of the combination of the first angle θ and the second angle φ is set to (θ, φ) = (10°, 20°), and at least one of the first angle θ and the second angle φ is changed so that the degradation of the processing performance other than the processing performance that is emphasized is within the allowable range. (θ, φ) = (10°, 20°) is a condition in which a result within the allowable range can be obtained in all items of the processing performance that are the evaluation targets.

[0058] When the first angle θ and the second angle φ are set to values that greatly deviate from the standard value, the possibility that the processing performance other than the processing performance that is emphasized is outside the allowable range is high, and therefore, in the present embodiment, the first angle θ is changed in the range of -10° to +10° with respect to the standard value, and the second angle φ is changed in the range of -5° to 0° with respect to the standard value. However, when there is no problem in the processing performance (depending on the liquid landing portion attribute), the angle change range can also be expanded.

[0059] Here, the behavior of the processing liquid immediately after landing is described with reference to Figures 3-5 to the case where the front surface of the wafer W on which the processing liquid lands (both the front surface of the wafer W itself or the front surface of the film formed on the front surface of the wafer W) is a hydrophobic surface and the case where it is a hydrophilic surface.

[0060] In the case where the front surface of the wafer W is a hydrophobic surface, as Figure 3 indicated, the processing liquid released from the nozzle 61 is difficult to spread on the front surface. Therefore, the processing liquid is likely to land in a state where the liquid droplet P FThe radial width of the area wetted by the treatment liquid is narrow at both the inner and outer positions in the radial direction. Here, "contact point" refers to the liquid column of treatment liquid released from nozzle 61 as described above (in...). Figure 3 and Figure 4 The center point is marked with the reference numeral "L1" in the attached diagram. Furthermore, the processing liquid landing on the hydrophobic surface tends to either detach from the front side of the wafer W immediately after landing due to liquid splashing, or detach from the front side of the wafer W shortly after landing. Therefore, there is a tendency to generate a large number of tiny droplets of processing liquid. These tiny droplets floating around the wafer W contribute to the generation of particles.

[0061] When the front side of the chip W is a hydrophilic surface, such as Figure 4 As shown, the treatment fluid released from nozzle 61 easily spreads on the front side. Therefore, at the contact point P... F The area wetted by the processing fluid is wide in the radial direction, both inside and outside the wafer. Furthermore, after contact with the wafer (compared to the case where the front side of the wafer W is hydrophobic), the processing fluid remains on the front side of the wafer W for a relatively long time and expands towards the APEX side, tending to detach from the wafer W due to centrifugal force. Therefore, very few tiny droplets of processing fluid are generated. On the other hand, it is difficult to adequately control the expansion of the processing fluid in the radial direction inwards; if this expansion is not suppressed, problems may arise with cutting accuracy, bevel width, etc. To suppress the expansion of the processing fluid in the radial direction inwards, it is sufficient to increase the outward component of the processing fluid's movement in the radial direction. This can be achieved by adjusting the first angle θ and the second angle φ (especially the first angle θ).

[0062] In addition, such as Figure 5 As shown, when the surface outside the radial position Q is hydrophobic and the surface inside the radial position Q is hydrophilic, the expansion of the treatment liquid to the outer side of the radial direction is suppressed by the hydrophobic surface. Therefore, the expansion of the treatment liquid to the inner region of the radial direction becomes larger.

[0063] Based on the above, the setting of the first angle θ and the second angle φ corresponding to the important processing performance will be explained.

[0064] While prioritizing the performance of the etching solution particles (minimal particle count), the first angle θ is kept constant at its standard value, while the second angle φ is reduced. Particles generated during etching (oblique etching) are primarily caused by liquid splashing immediately after the etching solution (etchant) lands on the front side of the wafer W. Therefore, by making the second angle φ, which influences liquid splashing, smaller than its standard value, liquid splashing can be suppressed. This effect is particularly pronounced when the front side of the wafer W is a hydrophobic surface prone to liquid splashing. Reducing the second angle φ also helps to suppress the spread of the etching solution towards the radially inward region from the point of contact.

[0065] When considering the properties of the liquid medicine particles, the first angle θ can be appropriately determined within the range of 0°≤θ≤20°, and the second angle φ can be appropriately determined within the range of 5°≤φ≤20°.

[0066] Furthermore, even when the treatment fluid is a rinsing fluid, liquid splashing may occur if the surface where the treatment fluid lands is hydrophobic. If liquid splashing of the rinsing fluid becomes a problem, then it is advisable to make the second angle φ smaller than the standard value during the rinsing process.

[0067] While prioritizing the performance of rinsing particles (few rinsing particles), the second angle φ is kept constant at its standard value, while the first angle θ is increased. Unlike liquid particles, which are mainly generated by liquid splashing, rinsing particles are generated because particles accumulate at the gas-liquid interface of the rinsing liquid (the innermost periphery of the liquid film of the rinsing liquid) during the rinsing process, and the accumulated particles remain on the front side of the wafer W.

[0068] When evaluating the performance of rinsing particles, special consideration should be given to the edge exclusion area. As is well known in the art, the edge exclusion area refers to the region that is not the object of evaluation for defects such as particles, for example, an annular region extending from the APEX to a position 2 mm inward from the APEX in the radial direction. To reliably rinse the chemical solution (etching solution) used in the chemical treatment (etching process), the contact point of the rinsing solution is set at a position approximately 0.5 mm inward in the radial direction from the contact point of the chemical solution. As mentioned above, the location where the most rinsing particles are generated is near the gas-liquid interface of the rinsing solution; therefore, it is preferable to position the gas-liquid interface during rinsing as far outward in the radial direction as possible, and more preferably within the edge exclusion area. Furthermore, the gas-liquid interface refers to... Figures 3-5 As shown, the cross-section of the treatment fluid immediately after landing (in) Figures 3-5 The inner end of the semi-elliptical portion (marked with reference numeral L2 in the attached drawing) in the radial direction.

[0069] As referenced above Figures 3-5As explained, when the surface on which the rinsing fluid lands is hydrophilic, the rinsing fluid tends to flatten immediately after landing and spreads around the point of contact. When the surface on which the rinsing fluid lands is hydrophobic, the rinsing fluid is difficult to flatten due to surface tension, and therefore, it is difficult to spread around the point of contact. When the first angle θ is small (close to zero degrees), the outward velocity component of the rinsing fluid released from the nozzle in the radial direction decreases. Therefore, when the surface on which the rinsing fluid lands is hydrophilic, the rinsing fluid tends to spread towards the region radially inward from the point of contact. To suppress the inward spread of the rinsing fluid in the radial direction, it is effective to increase the first angle θ to increase the outward velocity component of the rinsing fluid in the radial direction. As a result, the gas-liquid interface of the rinsing fluid during the rinsing process can be maintained at a position close to the point of contact, thereby placing the gas-liquid interface of the rinsing fluid within the edge removal region. Here, the first angle θ is set to 20°.

[0070] On the other hand, when the surface on which the rinsing fluid lands is hydrophobic, the rinsing fluid hardly extends towards the center of the wafer W, and immediately flows towards the periphery of the wafer W due to centrifugal force after landing. Therefore, when the surface on which the rinsing fluid lands is hydrophobic, from the viewpoint of suppressing the expansion of the rinsing fluid into the radially inward region, increasing the first angle θ is almost meaningless.

[0071] When prioritizing the performance of the rinsing particles, the first angle θ can be appropriately determined within the range of 15°≤θ≤30°, and the second angle φ can be appropriately determined within the range of 5°≤φ≤30°.

[0072] While prioritizing the width of the short slope, the second angle φ is kept constant at its standard value, while the first angle θ is increased. The slope width is... Figure 6 The width is indicated by the numeral "SW" in the attached diagram. When the first angle θ is small, the etchant tends to extend towards the region radially inward from the contact point. The reasoning is the same as that explained in the case of rinsing particle performance. When the etchant extends towards the contact point ( Figure 6 Point P in F When the etchant expands towards the radially inward region, the film closer to the contact point in the radial direction is slightly etched. The closer to the contact point, the greater the etching amount; conversely, the further away from the contact point in the radial direction, the smaller the etching amount. Therefore, when the etchant expands further from the contact point towards the radially inward region, a relatively gentle slope (i.e., a wider slope) is easily formed. To counter this, by increasing the first angle θ, the etchant hardly expands towards the radially inward region after contact, thus forming almost no slope, or even if a slope does form, its width is small (the slope angle is close to 90 degrees). Furthermore, even with a slight change in the second angle φ, the slope width remains almost unchanged.

[0073] In the case where the short slope width is emphasized, the first angle θ can be appropriately determined within a range of 10° ≤ θ ≤ 40°, and the second angle φ can be appropriately determined within a range of 5° ≤ φ ≤ 30°.

[0074] In the case where the prevention of jagged cutting is emphasized, the first angle θ is increased while the second angle φ is kept at a standard value. The "jagged cutting" refers to a case where, when the surface of the etching target is rough (i.e., a case where the surface morphology is large or a case where the surface has unevenness), the cutting interface (the outermost periphery of the film remaining after etching) becomes jagged. In addition, although it can be said that the prevention of jagged cutting is included in the achievement of high cutting precision, in this case, the "high cutting precision" and the "prevention of jagged cutting" described later are described as different items.

[0075] As described above, when the first angle θ is increased, the etching liquid hardly spreads to the area inside the radius direction from the liquid drop immediately after landing. In the case of a rough surface, when the etching liquid spreads to the area inside the radius direction from the liquid drop, the spread becomes uneven when viewed microscopically. That is, when viewed microscopically, the etching liquid that intrudes into the recessed portion increases, and thus the etching amount in the vicinity of the recessed portion increases, and the amount of the etching liquid that intrudes into the protruding portion decreases, and thus the etching amount in the vicinity of the protruding portion decreases, as a result, a jagged cutting interface is generated. In this regard, by increasing the first angle θ, the etching liquid immediately after landing hardly spreads to the area inside the radius direction from the liquid drop. That is, the portion where the etching liquid directly lands becomes the cutting interface, and thus the shape of the cutting interface is not easily affected by the rough surface, and a jagged cutting interface is not easily formed.

[0076] In the case where the prevention of jagged cutting is emphasized, the first angle θ can be appropriately determined within a range of 10° ≤ θ ≤ 40°, and the second angle φ can be appropriately determined within a range of 5° ≤ φ ≤ 30°.

[0077] In addition, the above-described flushing particle performance, short slope width, and prevention of jagged cutting are all achieved by preventing or inhibiting the spread of the treatment liquid to the area inside the radius direction from the liquid drop. It is possible to achieve all of these three treatment performances.

[0078] In the case where the notch-splashing particle performance (the small number of particles caused by notch-splashing) is emphasized, the first angle θ is increased while the second angle φ is kept at the standard value. The depth (the radial length) of the notch is usually about 1 to 1.3 mm, and the process liquid released from the nozzle collides directly (or immediately after landing) with the edge of the notch depending on the radial position of the landing point of the liquid. Since the collision causes splashing and since the splashing causes particles, the notch-splashing is suppressed, which contributes to the improvement of the particle performance. When the first angle θ is increased, the angle of incidence of the process liquid with respect to the edge of the notch becomes small, and thus the splashing of the process liquid caused by the collision with the edge of the notch can be suppressed. In addition, when the angle between the edge of the notch and the direction of release of the process liquid from the nozzle is near 90 degrees in plan view, there is a tendency to particularly suppress the notch-splashing, and thus in the case of the notch of the usual shape, the first angle θ is preferably an angle of substantially 20 to 25 degrees.

[0079] In the case where the notch-splashing particle performance is emphasized, the first angle θ is appropriately determined in the range of 20° ≤ θ ≤ 25°, and the second angle φ is appropriately determined in the range of 5° ≤ φ ≤ 30°.

[0080] In the case where the high cutting precision (the position precision of the outermost periphery of the film which is not etched when bevel etching is performed) is emphasized, the first angle θ is decreased while the second angle φ is kept at the standard value. In the case where the back surface center portion of the wafer W is held by the vacuum chuck, when the wafer W is rotated, the height of the landing point of the etching liquid on the front surface of the wafer W varies due to the warping of the wafer W or the vertical vibration of the wafer W. At this time, in the case where the first angle θ is the standard value or larger than the standard value, as shown in FIG. 9, the radial position of the landing point (P) of the process liquid (L) accompanying the vertical vibration (VO) of the wafer W varies relatively greatly, and the cutting precision is decreased. On the other hand, when the first angle θ is zero (or substantially zero), as shown in FIG. 10, the variation in the radial position of the landing point (P) of the process liquid (L) accompanying the vertical vibration (VO) of the wafer W is very small, and a high cutting precision can be obtained. Figure 7 F Figure 8 F

[0081] In addition, when the second angle φ is decreased, the spread (the spread in the release direction in plan view) of the process liquid in the vicinity of the landing point immediately after landing becomes large, and there is a tendency that the cutting precision is deteriorated due to the vertical displacement of the peripheral portion of the wafer W or the variation in the release flow rate of the process liquid from the nozzle. Therefore, as described above, the second angle φ is preferably a relatively large angle, for example, about 20 degrees.

[0082] ​​​​In the case where the cutting accuracy is emphasized, the first angle θ can be appropriately determined within a range of -10° ≤ θ ≤ 10°, and the second angle φ can be appropriately determined within a range of 5° ≤ φ ≤ 30°.

[0083] For the above six different required processing performances, the combination of (θ, φ) need not necessarily be six, and can be the same as the combination of (θ, φ) corresponding to two or more of the required processing performances. Specifically, for example, it can be the same as the combination of (θ, φ) corresponding to the suppression of notch flying particles and the combination of (θ, φ) corresponding to the short slope width.

[0084] When the optimum combination of (θ, φ) is set according to different required processing performances, the number of nozzles 61 corresponding to the number of combinations needs to be provided (in the case where a nozzle posture changing mechanism (to be described later) is not provided). In this case, the number of components of the bevel etching apparatus increases, and the manufacturing cost of the bevel etching apparatus increases. Therefore, in the case where the optimum (θ, φ) values corresponding to one required processing performance and the optimum (θ, φ) values corresponding to another required processing performance are similar, the combination of (θ, φ) can be made the same for these required processing performances. In other words, if the processing using the (θ, φ) values capable of satisfying one required processing performance can also satisfy another required processing performance, the combination of (θ, φ) can be made the same for these required processing performances. Specifically, for example, the combination of the optimum values of the first angle θ and the second angle φ in the case where the suppression of notch flying particles, the short slope width, the suppression of flushing particles, and the prevention of jagged cutting are emphasized are similar, and therefore the combination of (θ, φ) corresponding to these required processing performances can be made the same as each other. By so doing, one nozzle 61 can cope with a plurality of required processing performances, and the cost of the apparatus can be reduced. When permitted from the viewpoint of the constitution of the apparatus and the cost of the apparatus, the combination of (θ, φ) can be set for each required processing performance.

[0085] A nozzle posture changing mechanism 64 capable of continuously or stepwise changing the posture of the nozzle 61 can be provided. Specifically, for example, as shown in FIG. 6, a nozzle posture changing mechanism 64 capable of continuously changing the posture of the nozzle 61 can be provided. Figure 9As shown, the nozzle posture changing mechanism 64 can be composed of a first rotation mechanism 641 for rotating the nozzle holder 621 holding the nozzle 61 about a horizontal axis with respect to the retractable rod 622 of the nozzle moving mechanism 62, and a second rotation mechanism 642 for rotating the nozzle 61 about a vertical axis with respect to the nozzle holder 621. Instead of the first rotation mechanism 641, a mechanism for rotating the rod 631 itself about a horizontal axis can also be provided. Instead of the first rotation mechanism 641, a swing mechanism for swinging the nozzle moving mechanism 62 as a whole about a horizontal swing axis can also be provided. By providing such a nozzle posture changing mechanism 64, at least one of the first angle Θ and the second angle φ can be changed. When the nozzle posture changing mechanism 64 has a 2-axis rotation mechanism as described above, both the first angle Θ and the second angle φ can be changed. By providing the nozzle posture changing mechanism 64, the number of nozzles 61 can be reduced. In addition, the arrows extending obliquely downward from the nozzles 61 indicate the treatment liquid released from the nozzles 61.

[0086] Next, a specific example of oblique angle etching using the processing unit 16 will be described. In the specific example described below, the etching apparatus 1 including four nozzles 61 is used. The four nozzles 61 are distinguished as a nozzle A, a nozzle B, a nozzle C, and a nozzle D. As shown in FIG. 6, the nozzle A, the nozzle B, the nozzle C, and the nozzle D are located above the peripheral portion of the wafer W. Figure 10 As shown in FIG. 6, the nozzle A, the nozzle B, the nozzle C, and the nozzle D are located above the peripheral portion of the wafer W.

[0087] Figure 10 The state in which the treatment liquid is released from the nozzle A is shown, and the behavior of the treatment liquid landing on the front surface of the wafer W is shown schematically. After the treatment liquid lands on the front surface of the wafer W, it flows while expanding in the radial direction (in the case where the front surface of the wafer W is hydrophilic), and finally separates to the outside of the wafer due to the centrifugal force. In this case, a band of the treatment liquid extending in parallel with the peripheral edge of the wafer W can be observed. In the case where the front surface of the wafer W is hydrophobic, the treatment liquid separates from the wafer W immediately after landing or within a short time after landing on the front surface of the wafer W, and thus a band of the treatment liquid extending in parallel with the peripheral edge of the wafer W cannot be observed, or if it can be observed, the length thereof is very short.

[0088] Among the nozzle A, the nozzle B, the nozzle C, and the nozzle D, the combinations of the first angle Θ and the second angle φ are as follows.

[0089] Nozzle A: (Θ, φ) = (5°, 20°).

[0090] Nozzle B: (Θ, φ) = (10°, 10°).

[0091] Nozzle C: (Θ, φ) = (25°, 20°).

[0092] Nozzle D: (θ, φ) = (25°, 20°).

[0093] For nozzles 61 (A to D), each nozzle 61 can be moved using a nozzle moving mechanism 62 attached to each nozzle 61, such that the contact point P of the treatment liquid released from the nozzle is... F The position moves in the radial direction of the wafer W. Each nozzle 61 is supported by a nozzle moving mechanism 62, such that the values ​​of the first angle θ and the second angle φ are substantially constant regardless of the radial position of the nozzle 61.

[0094] In the following description, the radial position of a point on the front side of wafer W (e.g., the radial position of the contact point of the processing liquid) is expressed in the wafer radial direction from APEX of wafer W to that point (the radial direction inward is negative). For example, when a point is recorded as Dr = -1.0 mm, it means that the point is located 1.0 mm inward from APEX in the radial direction.

[0095] In the specific example below, the orientation of each nozzle 61 is fixed, and the first angle θ and the second angle φ are inherent values ​​of the nozzle 61.

[0096] [First specific example]

[0097] The first specific example is an instance where a hydrophilic film (e.g., a silicon oxide film) is formed on a hydrophobic surface (e.g., the front side of bare silicon), and the hydrophilic film on the periphery of the wafer W is removed using a chemical solution (hydrofluoric acid).

[0098] First, the wafer W is rotated. The rotation of wafer W continues until the processing is complete.

[0099] Next, the liquid flow begins from nozzle A at point P. F HF (hydrofluoric acid) is released at a position Dr = -1.0 mm. In nozzle A, (θ, φ) = (5°, 20°), which meets the requirements for emphasizing cutting accuracy. Furthermore, since the surface where HF lands is hydrophilic, even if the first angle θ is changed, the liquid splashing pattern hardly changes, and the particle properties of the liquid will not be a problem.

[0100] Then, move nozzle A to make the liquid point P... F It gradually moves outward in the radial direction. At the contact point P... F When Dr advances to a position 0.8 mm further outward in the radial direction than -0.8 mm, the liquid level begins to rise from nozzle B towards the contact point P. FThe HF is discharged in a manner that the position Dr = -0.8 mm, and the discharge of the HF from the nozzle A is stopped. In the vicinity of the position Dr = -0.8 mm, the hydrophilic film has been removed by the HF discharged from the nozzle A, and thus the HF discharged from the nozzle B lands on the hydrophobic surface. In the nozzle B, (0, f) = (10°, 10°), which corresponds to the case where the liquid particle performance (particularly, the liquid particle performance with respect to the hydrophobic surface) is emphasized. The liquid splashing of the HF landing on the hydrophobic surface can be prevented, and thus the generation of the particles can be suppressed.

[0101] After that, the nozzle A is moved so that the landing point gradually moves to the outside in the radial direction. When the hydrophobic surface is exposed in the desired area (to a position slightly lower than the APEX), the discharge of the HF from the nozzle D is started in a manner that the position Dr of the landing point P F The rinse liquid (DIW) is discharged in a manner that the position Dr = -1.5 mm, and the discharge of the HF from the nozzle B is stopped. In the nozzle D, (0, f) = (25°, 20°), which corresponds to the condition where the rinse particle performance is emphasized. After that, the nozzle D is moved so that the landing point gradually moves to the outside in the radial direction. After the rinse processing in the desired area is completed, the discharge of the rinse liquid from the nozzle D is stopped, and the spinning of the wafer W is performed.

[0102] [Second Specific Example]

[0103] The second specific example is an example in which the hydrophilic film and the hydrophobic film of the peripheral portion of the wafer W are removed by the liquid chemical (hydrofluoric acid) in a case where the hydrophobic film is further formed on the hydrophilic film formed on the front surface of the wafer W.

[0104] First, the wafer W is rotated. The rotation of the wafer W is continued until the processing is completed.

[0105] Next, the discharge of the HF (hydrofluoric acid) from the nozzle B is started in a manner that the position Dr of the landing point P F = -1.0 mm. In the nozzle B, (0, f) = (10°, 10°), which corresponds to the condition where the liquid particle performance is emphasized. The liquid splashing of the HF landing on the hydrophobic surface can be prevented, and thus the generation of the particles can be suppressed.

[0106] After that, the nozzle B is moved so that the landing point P F gradually moves to the outside in the radial direction. Then, when the hydrophobic film is removed in the desired area (to a position slightly lower than the APEX), the discharge of the HF (hydrofluoric acid) from the nozzle A is started in a manner that the position Dr of the landing point is -1.0 mm, and the discharge of the HF from the nozzle B is stopped. In the nozzle A, (0, f) = (5°, 20°), which corresponds to the condition where the cutting accuracy is emphasized. The HF discharged from the nozzle A lands on the hydrophilic surface, and thus the liquid splashing can not be considered.

[0107] After that, the nozzle A is moved so that the landing point gradually moves to the outside in the radial direction. When the hydrophilic film is removed in the desired area (to a position slightly lower than the APEX), the release of the rinse liquid (DIW) from the nozzle D is started with the landing point Dr = -1.5 mm, and the release of the HF from the nozzle A is stopped. In the nozzle D, (θ, φ) = (25°, 20°), which corresponds to the condition that the rinse particle performance is emphasized. After that, the nozzle D is moved so that the landing point gradually moves to the outside in the radial direction. After the rinse processing in the desired area is completed, the release of the rinse liquid from the nozzle D is stopped, and the spinning of the wafer W is performed.

[0108] [Third Specific Example]

[0109] The third specific example is an example in which the low-ER film and the high-ER film are removed from the peripheral portion of the wafer W using a chemical liquid (hydrofluoric acid) in a case where the high-ER film is further formed on the low-ER film formed on the front surface of the wafer W.

[0110] First, the wafer W is rotated. The rotation of the wafer W is continued until the processing is completed.

[0111] Next, the release of the HF (hydrofluoric acid) from the nozzle C is started with the landing point P F Dr = -1.0 mm. In the nozzle C, (θ, φ) = (25°, 20°), which corresponds to the condition that the short slope width is emphasized. The low-ER film can be etched by only slightly contacting the etching liquid, and thus there is a tendency that the slope width becomes large due to the etching liquid expanding to the inside in the radial direction. In order to prevent the slope width from becoming large, the above condition is adopted.

[0112] After that, the nozzle C is moved so that the landing point gradually moves to the outside in the radial direction. Then, when the low-ER film is removed in the desired area (to a position slightly lower than the APEX), the release of the HF (hydrofluoric acid) from the nozzle A is started with the landing point P F Dr = -1.0 mm, and the release of the HF from the nozzle C is stopped. In the nozzle A, (θ, φ) = (5°, 20°), which corresponds to the condition that the cutting accuracy is emphasized. The high-ER film has a tendency that the slope width is small, and thus the etching is performed in the condition that the cutting accuracy is emphasized without considering the slope width.

[0113] After that, the nozzle A is moved so that the landing point gradually moves to the outside in the radial direction. When the rough surface film is removed in the desired area (to a position slightly lower than the APEX), the release of the rinse liquid (DIW) from the nozzle D is started with the landing point at a position Dr = -1.5 mm, and the release of the HF from the nozzle A is stopped. In the nozzle D, (θ, φ) = (25°, 20°), which corresponds to the condition that the rinsing particle performance is emphasized. After that, the nozzle D is moved so that the landing point gradually moves to the outside in the radial direction. After the rinsing process in the desired area is completed, the release of the rinse liquid from the nozzle D is stopped, and the spinning of the wafer W is performed.

[0114] [Fourth Specific Example]

[0115] The fourth specific example is an example in which, in the case where a film having a small surface morphology (a film having a flat surface when viewed microscopically (flat surface film)) is formed on the front surface of the wafer W, and a film having a large surface morphology (a film having a rough surface when viewed microscopically (rough surface film)) is further formed thereon, the flat surface film and the rough surface film of the wafer W are removed using a chemical liquid (hydrofluoric acid).

[0116] First, the wafer W is rotated. The rotation of the wafer W is continued until the process is completed.

[0117] Next, the release of the HF (hydrofluoric acid) from the nozzle C is started with the landing point at a position Dr = -1.0 mm. In the nozzle C, (θ, φ) = (25°, 20°), which corresponds to the condition that the prevention of the sawtooth-like cutting is emphasized.

[0118] After that, the nozzle C is moved so that the landing point gradually moves to the outside in the radial direction. Then, when the rough surface film is removed in the desired area (to a position slightly lower than the APEX), the release of the HF (hydrofluoric acid) from the nozzle A is started with the landing point at a position Dr = -1.0 mm, and the release of the HF from the nozzle C is stopped. In the nozzle A, (θ, φ) = (5°, 20°), which corresponds to the condition that the cutting accuracy is emphasized. The flat surface film does not have a problem of sawtooth-like cutting, and thus the etching is performed under the condition that the cutting accuracy is emphasized.

[0119] After that, the nozzle A is moved so that the landing point gradually moves to the outside in the radial direction. When the flat surface film is removed in the desired area (to a position slightly lower than the APEX), the release of the rinse liquid (DIW) from the nozzle D is started with the landing point at a position Dr = -1.5 mm, and the release of the HF from the nozzle A is stopped. In the nozzle D, (θ, φ) = (25°, 20°), which corresponds to the condition that the rinsing particle performance is emphasized. After that, the nozzle D is moved so that the landing point gradually moves to the outside in the radial direction. After the rinsing process in the desired area is completed, the release of the rinse liquid from the nozzle D is stopped, and the spinning of the wafer W is performed.

[0120] In each of the above-described embodiments, the selection of the nozzle used can be made in accordance with a predetermined processing recipe. That is, in this case, in the processing recipe, parameter values corresponding to various processing conditions such as "wafer rotation speed: XX rpm; nozzle used: nozzle A; processing liquid released: HF; landing point: Dr = -1.0 mm to APEX; moving speed: YY mm / sec" are predetermined for each processing step. The control section 14 performs the liquid processing of the bevel portion by controlling the rotation drive section 22, the nozzle moving mechanism 62, the processing liquid supply mechanism 63, and the like in such a manner that the processing conditions defined in the processing recipe can be implemented.

[0121] It is also possible that not all of the processing conditions are determined in advance with a processing recipe, but that the above-described substrate processing apparatus 1, or a substrate processing system including the above-described substrate processing apparatus 1 as a processing unit has a function of deciding at least a part of the processing conditions in correspondence with the result of the inspection of the state of the processing target surface of the wafer W. Specifically, for example, an inspection section for inspecting the state of the processing target surface of the wafer W can be provided. The inspection section can be an independent inspection apparatus, or an inspection unit assembled in the housing of the above-described substrate processing system. The state of the processing target surface of the wafer W inspected by the inspection section can be exemplified by, for example, the surface shape, the notch shape, the warping state, the contact angle (this can be observed by, for example, a high-speed video camera or the like at the time of liquid processing), and the like.

[0122] The result of the inspection by the inspection section is input to the control section 14 (see Figure 1 ). In addition, a required processing result (processing performance to be emphasized) is input to the control section 14. The input of the required processing result to the control section 14 can be made via communication from a host computer, or manually by an operator via a user interface (touch panel, keyboard, and the like) of the substrate processing apparatus 1 or the substrate processing system. The arithmetic section 142 of the control section 14, for example, refers to an angle table (a database in which the release angles (the first angle θ, the second angle φ) of the nozzle corresponding to the required processing result are stored) stored in the storage section 141, and finds appropriate values of the first angle θ and the second angle φ, and selects the nozzle 61 having the values. In addition to the selection of the nozzle 61, processing can be performed in accordance with a processing recipe.

[0123] As described above, by appropriately changing the release angles (the first angle θ, the second angle φ) of the processing liquid from the nozzle 61, a preferred processing result in which the most emphasized processing performance is implemented can be obtained.

[0124] In addition, in the above-described description, only the processing of the front side of the wafer W has been mentioned, but the processing of the back side of the wafer W can be performed simultaneously with the processing of the front side of the wafer W.

[0125] The embodiments disclosed this time should be considered illustrative in all points and not restrictive. The above-described embodiments can be omitted, replaced, changed in various ways without departing from the scope of the appended claims and the gist thereof.

[0126] Explanation of Reference Signs

[0127] 6 release section, 14 control section, 21 substrate holding section, 22 rotation drive section.

Claims

1. A substrate processing apparatus, characterized in that it is capable of liquid processing the peripheral portion of the front side of a substrate using a processing liquid, wherein... including: a substrate holding section for holding a substrate; a rotation drive section for rotating the substrate holding section around a rotation axis; a release section for releasing the processing liquid to a landing point provided on a peripheral portion of a front surface of the substrate; and a control section for controlling at least an operation of the release section, a circle is defined with a center at a foot of a perpendicular line drawn from the landing point to the rotation axis, with a radius of a line segment connecting the foot of the perpendicular line and the landing point, and on a plane orthogonal to the rotation axis, and a tangent line of the circle at the landing point is defined, an angle formed by a straight line connecting a foot of a perpendicular line drawn from a release point of the processing liquid to the front surface of the substrate and the landing point and the tangent line of the circle at the landing point is defined as a first angle θ, an angle formed by the straight line connecting the foot of the perpendicular line drawn from the release point of the processing liquid to the front surface of the substrate and the landing point and a straight line connecting the release point and the landing point is defined as a second angle φ, the release section includes a plurality of nozzles capable of releasing the same first processing liquid as the processing liquid, at least one of the first angle θ and the second angle φ of one nozzle and another nozzle of the plurality of nozzles is different from each other, the control section is capable of controlling the release section to release the first processing liquid using a nozzle capable of achieving a processing performance of interest from among the plurality of nozzles based on an attribute of the substrate or a film formed on the substrate on which the first processing liquid released from the release section lands, and the processing performance of interest.

2. The substrate processing apparatus according to claim 1, wherein: the control section is capable of controlling the release section to release the first processing liquid using a nozzle capable of achieving the processing performance of interest from among the plurality of nozzles according to a processing recipe that specifies a processing condition of the substrate and a nozzle to be used.

3. The substrate processing apparatus according to claim 1, wherein: the control section has a function of selecting a nozzle capable of achieving the processing performance of interest from among the plurality of nozzles based on an attribute of the substrate or a film formed on the substrate on which the first processing liquid released from the release section lands, and the processing performance of interest, and is capable of controlling the release section to release the first processing liquid using the selected nozzle.

4. The substrate processing apparatus according to claim 1, wherein: the control section is capable of controlling the release section to release the first processing liquid from the other nozzle to the same substrate after releasing the first processing liquid from the one nozzle of the plurality of nozzles to the same substrate.

5. The substrate processing apparatus according to any one of claims 1 to 4, wherein: the release section has another nozzle different from the plurality of nozzles, the other nozzle being capable of releasing a second processing liquid different from the first processing liquid as the processing liquid, or one nozzle of the plurality of nozzles of the release section capable of releasing the first processing liquid is also capable of releasing the second processing liquid. including:

6. A substrate processing apparatus, characterized in that it is capable of liquid processing the peripheral portion of the front side of a substrate using a processing liquid, wherein... a substrate holding section for holding a substrate; ​ a rotation drive section for rotating the substrate holding section around a rotation axis; a release section for releasing the processing liquid toward a liquid landing point provided at a peripheral portion of a front surface of the substrate; and a control section for controlling at least an operation of the release section, the control section is capable of controlling the release section to achieve a first angle θ and a second angle φ capable of achieving a processing performance of interest, based on a property of the substrate or a film formed on the substrate on which the processing liquid released from the release section lands, and the processing performance of interest, in defining a circle centered on a foot of a perpendicular drawn from the liquid landing point to the rotation axis, with a line segment connecting the foot of the perpendicular and the liquid landing point as a radius, and located on a plane orthogonal to the rotation axis, and defining a tangent to the circle at the liquid landing point, the first angle θ is an angle formed by a straight line connecting a foot of a perpendicular drawn from a release point of the processing liquid to the front surface of the substrate and the liquid landing point, and the tangent to the circle at the liquid landing point, the second angle φ is an angle formed by the straight line connecting the foot of the perpendicular drawn from the release point of the processing liquid to the front surface of the substrate and the liquid landing point, and a straight line connecting the release point and the liquid landing point.

7. The substrate processing apparatus according to claim 6, wherein: the release section includes a plurality of nozzles capable of releasing the same processing liquid, at least one of the first angle θ and the second angle φ of one nozzle and another nozzle among the plurality of nozzles are different from each other.

8. The substrate processing apparatus according to claim 6, wherein: the release section includes a nozzle for releasing the processing liquid, and a nozzle posture changing mechanism capable of changing at least one of the first angle θ and the second angle φ of the nozzle by changing a posture of the nozzle.

9. The substrate processing apparatus according to any one of claims 1 to 4 and 6 to 8, wherein: the property of the substrate or the film formed on the substrate includes at least one of - an affinity to the processing liquid, - a surface roughness, and - an etching rate to the processing liquid the processing performance of interest includes at least one of - a small amount of particles, - a short slope width, and - a high cutting precision.

10. A substrate processing method of performing liquid processing on a peripheral portion of a front surface of a substrate with a processing liquid, characterized by comprising: a step of supplying the processing liquid to the peripheral portion of the front surface of the substrate; and a step of rotating the substrate while the processing liquid is supplied to the peripheral portion of the front surface of the substrate. including: a step of rotating a substrate around a rotation axis; and a step of releasing a processing liquid from a release section toward a liquid landing point provided at a peripheral portion of a front surface of the substrate being rotated; in the step of releasing the processing liquid, based on a property of the substrate or a film formed on the substrate on which the processing liquid released from the release section lands, and a processing performance of interest, the release section is controlled to achieve a first angle θ and a second angle φ capable of achieving the processing performance of interest, in defining a circle centered on a foot of a perpendicular drawn from the liquid landing point to the rotation axis, with a line segment connecting the foot of the perpendicular and the liquid landing point as a radius, and located on a plane orthogonal to the rotation axis, and defining a tangent to the circle at the liquid landing point, the first angle θ is an angle formed by a straight line connecting a foot of a perpendicular drawn from a release point of the processing liquid to the front surface of the substrate and the liquid landing point, and the tangent to the circle at the liquid landing point, the second angle φ is an angle formed by the straight line connecting the foot of the perpendicular drawn from the release point of the processing liquid to the front surface of the substrate and the liquid landing point, and a straight line connecting the release point and the liquid landing point. the first angle θ is an angle formed by a straight line connecting a foot of a perpendicular drawn from a release point of the processing liquid to a front surface of the substrate and a tangent at the landing point of the circle to the landing point, the second angle φ is an angle formed by a straight line connecting the foot of the perpendicular drawn from the release point of the processing liquid to the front surface of the substrate and the landing point and a straight line connecting the release point and the landing point.

11. The substrate processing method according to claim 10, wherein: the release section includes a plurality of nozzles capable of releasing the same processing liquid, at least one of the first angle θ and the second angle φ of one nozzle and another nozzle of the plurality of nozzles is different from each other, and the first angle θ and the second angle φ capable of achieving the processing performance of interest are realized by selecting a nozzle capable of achieving the first angle θ and the second angle φ capable of achieving the processing performance of interest from the plurality of nozzles.

12. The substrate processing method according to claim 10, wherein: the release section includes a nozzle for releasing the processing liquid, and a nozzle posture changing mechanism capable of changing at least one of the first angle θ and the second angle φ of the nozzle by changing a posture of the nozzle, and the first angle θ and the second angle φ capable of achieving the processing performance of interest are realized by adjusting the posture of the nozzle to the first angle θ and the second angle φ capable of achieving the processing performance of interest.

13. The substrate processing method according to any one of claims 10 to 12, wherein: the property of the substrate or the film formed on the substrate includes at least one of - affinity to the processing liquid, - surface roughness, and - etching rate to the processing liquid the processing performance of interest includes at least one of - less amount of particles, - short slope width, and - high cutting precision. ​ ​

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