Substrate processing apparatus, method of manufacturing semiconductor device, and recording medium

Abstract

The present application provides a technology capable of reducing the occupied space. A substrate processing device has: a module having: a gas supply portion having an upstream rectifying portion and a supply structure; a reaction tube communicating with the gas supply portion; a gas exhaust portion provided at a position opposite to the upstream rectifying portion and having a downstream rectifying portion and an exhaust structure; a supply pipe connected to the gas supply portion; an exhaust pipe connected to the gas exhaust portion; a transport chamber adjacent to a plurality of modules; and a pipe arrangement area located at a side of the transport chamber and adjacent to the module, capable of arranging the supply pipe or the exhaust pipe. The reaction tube is arranged at a position overlapping the transport chamber on an axis in a length direction of the substrate processing device. In a case where the supply pipe is arranged in the pipe arrangement area, the gas exhaust portion is arranged at a position inclined with respect to the axis and not overlapping the transport chamber. In a case where the exhaust pipe is arranged in the pipe arrangement area, the gas supply portion is arranged at a position inclined with respect to the axis and not overlapping the transport chamber.

Description

Technical Field

[0001] This invention relates to a substrate processing apparatus, a method for manufacturing a semiconductor device, and a recording medium. Background Technology

[0002] As one method of substrate processing apparatus used in the manufacturing process of semiconductor devices, a substrate processing apparatus that processes multiple substrates at the same time is used (e.g., Patent Document 1). In such a substrate processing apparatus, due to the limitation of the area of ​​the mounting site, it is required to minimize the space occupied (the dedicated area during mounting).

[0003] Existing technical documents

[0004] Patent documents

[0005] Patent Document 1: Japanese Patent Application Publication No. 2020-43361 Summary of the Invention

[0006] The problem that the invention aims to solve

[0007] This disclosure provides a technique that can reduce space occupation.

[0008] Solution for solving the problem

[0009] A substrate processing apparatus is provided, comprising: a module including: a gas supply section having an upstream rectifier and a supply structure; a reaction tube communicating with the gas supply section; and a gas exhaust section disposed opposite to the upstream rectifier and having a downstream rectifier and an exhaust structure; a supply pipe connected to the gas supply section; an exhaust pipe connected to the gas exhaust section; a transport chamber adjacent to a plurality of the modules; and a piping configuration area located to the side of the transport chamber and adjacent to the modules, capable of configuring the supply pipe or the exhaust pipe, wherein the reaction tube is disposed on the longitudinal axis of the substrate processing apparatus at a position overlapping the transport chamber, wherein when the supply pipe is disposed in the piping configuration area, the gas exhaust section is disposed at a position inclined relative to the axis and not overlapping the transport chamber, and when the exhaust pipe is disposed in the piping configuration area, the gas supply section is disposed at a position inclined relative to the axis and not overlapping the transport chamber.

[0010] Invention Effects

[0011] According to one aspect of this disclosure, a technique that can reduce space occupation can be provided. Attached Figure Description

[0012] Figure 1 This is an explanatory diagram showing a schematic structural example of a substrate processing apparatus according to one aspect of the present disclosure.

[0013] Figure 2 This is an explanatory diagram showing a schematic structural example of a substrate processing apparatus according to one aspect of the present disclosure.

[0014] Figure 3 This is an explanatory diagram illustrating an example of the appearance of a substrate processing apparatus according to one aspect of the present disclosure.

[0015] Figure 4 This is an explanatory diagram showing a schematic structural example of a substrate processing apparatus according to one aspect of the present disclosure.

[0016] Figure 5 This is an explanatory diagram illustrating a substrate support portion according to one embodiment of the present disclosure.

[0017] Figure 6 This is an illustration of a gas supply system according to one aspect of the present disclosure.

[0018] Figure 7 This is an illustrative diagram illustrating a gas exhaust system according to one aspect of this disclosure.

[0019] Figure 8 This is an explanatory diagram illustrating the controller of a substrate processing apparatus according to one aspect of the present disclosure.

[0020] Figure 9 This is a flowchart illustrating a substrate processing procedure according to one aspect of the present disclosure. Detailed Implementation

[0021] Hereinafter, the implementation method of this approach will be described with reference to the accompanying drawings. Furthermore, the drawings used in the following description are schematic, and the dimensional relationships and ratios of the elements in the drawings may not correspond to reality. Additionally, the dimensional relationships and ratios of the elements may not be consistent between different drawings.

[0022] (1) Structure of the substrate processing device

[0023] use Figures 1 to 7 The outline structure of a substrate processing apparatus according to one aspect of the present disclosure is described. Figure 1 This is a cross-sectional view showing a structural example of the substrate processing apparatus according to this method. Figure 1 For ease of explanation, the direction from the left side (e.g., module 200b side) to the right side (e.g., module 200a side) in the diagram is called the X-axis, and the direction from the near front (e.g., loading port 110 side) to the inside (e.g., module 200 side) is called the Y-axis. In the X-axis, the left side in the diagram is called X2, and the right side is called X1; in the Y-axis, the near front side is called Y1, and the inside side is called Y2.

[0024] As will be described later, the two modules 200 (200a, 200b) are configured to be adjacent in the X-axis direction, and therefore the X-axis direction is also referred to as the direction in which the modules 200 are arranged.

[0025] The direction from Y1 to Y2 can also be represented as follows. As described later, the substrate S moves between the IO stage 110 and the module 200, so the direction from Y1 to Y2 is also called the moving direction of the substrate S, or the direction of the substrate S toward the module. In addition, since it is also the length direction of the entire substrate processing apparatus 100, the Y-axis is also called the length direction of the substrate processing apparatus.

[0026] Figure 1 This is a diagram showing the substrate processing device viewed from above, but for ease of explanation, in... Figure 1 The diagram also describes substrate processing apparatuses of varying heights. For example, the diagram shows both a reaction tube 210 and a vacuum transport robot 180, but... Figure 2 As shown, the reaction tube 210 and the vacuum transport robot 180 have different heights.

[0027] Figure 2 This illustrates a structural example of a substrate processing apparatus according to this method, which is along... Figure 1 The longitudinal section view of A-A'. Figure 3 From Figure 1 The appearance diagram observed from line of sight C. Figure 4 This illustrates an example of the structure of the substrate processing unit according to this method, which is along... Figure 1 The longitudinal section view of B-B'. Figure 5 This is an explanatory diagram illustrating the structure of the substrate support portion and its surrounding area according to this method. Figure 6 This is an explanatory diagram illustrating the gas supply system of the substrate processing apparatus according to this method. Figure 7 This is an explanatory diagram illustrating the gas exhaust system of the substrate processing apparatus according to this method.

[0028] The substrate processing apparatus 100 processes the substrate S and mainly consists of an I / O worktable 110, an atmospheric conveying chamber 120, a loading interlock chamber 130, a vacuum conveying chamber 140, a module 200, and a toolbox 500. Next, each structure will be described in detail.

[0029] exist Figure 2 For ease of explanation, the specific structure of module 200 is omitted. Additionally, in... Figure 1 , Figure 2 , Figure 4 For ease of explanation, the specific structure of toolbox 500 has been omitted.

[0030] (Atmospheric Transport Chamber & I / O Workbench)

[0031] An I / O stage (loading port) 110 is provided near the front of the substrate processing apparatus 100. A plurality of cassettes 111 are mounted on the I / O stage 110. The cassettes 111 are used as carriers for transporting substrates S such as silicon (Si) substrates.

[0032] The IO workbench 110 is adjacent to the atmospheric transport chamber 120. The atmospheric transport chamber 120 is connected to a loading interlock chamber 130 on a surface different from that of the IO workbench 110. An atmospheric transport robot 122 for transferring the substrate S is installed inside the atmospheric transport chamber 120.

[0033] A substrate input / output port 128 for inputting and outputting substrate S relative to the atmospheric transport chamber 120 is provided on the front side of the housing 121 of the atmospheric transport chamber 120. The substrate input / output port 128 is opened and closed by a cell opener (not shown). A substrate input / output port 133 for inputting and outputting substrate S to the loading interlock chamber 130 is provided on the inner side of the housing 127 of the atmospheric transport chamber 120. The substrate input / output port 133 is opened and closed by a gate valve (not shown), thereby enabling the entry and exit of substrate S.

[0034] (Loading the interlocked room)

[0035] The loading interlock chamber 130 is adjacent to the atmospheric delivery chamber 120. A vacuum delivery chamber 140 (described later) is disposed on a surface of the housing 131 constituting the loading interlock chamber 130 that differs from the atmospheric delivery chamber 120. In this configuration, two housings 131a and 131b are provided. The vacuum delivery chamber 140 is connected via a gate valve 134. A substrate mounting stage 136 for mounting the substrate S is disposed within the loading interlock chamber 130.

[0036] (Vacuum transport chamber)

[0037] The substrate processing apparatus 100 includes a vacuum transport chamber (transfer module) 140, which serves as a transport space for transporting substrate S under negative pressure. The housing 141 constituting the vacuum transport chamber 140 is formed into a pentagon that is symmetrical from left to right when viewed from above, and a loading interlock chamber 130 and modules 200 (200a, 200b) for processing substrate S are connected to its outer periphery.

[0038] The housing 141 is composed of a wall 142 adjacent to the loading interlock chamber 130, a wall 144 adjacent to module 200a, a wall 145 adjacent to module 200b, a wall 143 disposed between walls 142 and 144, and a wall 146 disposed between walls 142 and 145. Furthermore, a cover 141a is provided on top. The cover 141a is fixed with a hinge 141b disposed on the side of wall 142 as an axis. When maintaining the interior of the housing 141 or the vacuum transport robot 180, the module 200 side of the cover 141a is raised, towards... Figure 2 The direction of the arrow recorded opens cover 141a.

[0039] Wall 144 and wall 145 are adjacent to each other at a predetermined angle (e.g., an obtuse angle). Therefore, the surfaces of walls 144 and 145 adjacent to module 200 are arranged radially when viewed from the center of vacuum delivery chamber 140. The portion of housing 141 formed by walls 144 and 145 is referred to as a protrusion.

[0040] At approximately the center of the vacuum transfer chamber 140, a vacuum transfer robot 180 is provided at its base on a flange 147, serving as a transfer unit for transferring (transferring) the substrate S under negative pressure. The vacuum transfer robot 180, located within the vacuum transfer chamber 140, is configured to maintain the airtightness of the vacuum transfer chamber 140 and to move up and down via a lift 148 and a flange 147. The arm 181 of the vacuum transfer robot 180 is configured to move up and down via the lift 148.

[0041] The vacuum transport robot 180 has two arms 181. Each arm 181 has an end effector 182 for carrying a substrate S. By rotating and extending the arms 181, the substrate S is transported into or out of the module 200.

[0042] Walls 144 and 145 are respectively connected to modules 200 (modules 200a and 200b). Specifically, they are connected to the transfer chamber 217 of module 200, which will be described later.

[0043] (Module)

[0044] Two modules 200 are arranged along the X-axis. Module 200a is arranged on the X1 side, and module 200b is arranged on the X2 side. In the following description of modules 200, the number "a" describes the structure of module 200a, and the number "b" describes the structure of module 200b. In addition, the parts without numbers are common to all modules 200.

[0045] like Figure 2 , Figure 3 As shown, the housing 201 constituting module 200 has a reaction tube receiving chamber 206 at the top and a transfer chamber 217 at the bottom. A partition wall 218 is provided between the reaction tube receiving chamber 206 and the transfer chamber 217. The reaction tube receiving chamber 206 mainly houses the reaction tubes 210. At least the transfer chamber 217 is pentagonal when viewed from above. Furthermore, the reaction tube receiving chamber 206 is also preferably pentagonal. In this embodiment, an example is used where the transfer chamber 217 and the reaction tube receiving chamber 206 are both pentagonal, and the housing 201 as a whole is pentagonal when viewed from above.

[0046] The inclined walls 202 (202a, 202b) of the pentagonal box are arranged at an angle relative to the X-axis and Y-axis. Two walls extending along the X-axis are arranged parallel to each other, and two walls extending along the Y-axis are also arranged parallel to each other. Among the walls arranged parallel to the X-axis, the wall on the Y1 side is configured to be shorter than the wall on the Y2 side. This wall on the Y1 side is referred to as wall 203 (203a, 203b), and the wall on the Y2 side is referred to as wall 205 (205a, 205b). Among the walls arranged parallel to the Y-axis, the wall on the center side of the X-axis is configured to be shorter than the outer walls. This wall on the center side is referred to as wall 204 (204a, 204b). Wall 202 is arranged between walls 203 and wall 204.

[0047] Boxes 201a and 201b are symmetrically arranged. That is, walls 204a and 204b are arranged adjacent to each other, and walls 203a and 203b are arranged adjacent to each other, sandwiching box 141. Furthermore, walls 202a and 202b form a predetermined angle (for example, an obtuse angle, formed by walls 144 and 145), and are adjacent to each other in a way that creates a space on the Y1 side. This space is also referred to as a recess formed by two modules 200. The protrusions of box 141 fit into the recesses.

[0048] By adopting this structure, the distance from wall 142 to wall 205 can be shortened compared to the case of a box arranged in a square shape as described in existing technical documents. Therefore, the space occupied by the substrate processing apparatus 100 can be reduced.

[0049] At least the transfer chamber 217 has the structure described above. Each inclined wall 202 in the transfer chamber 217 is provided with an input / output port 149 (149a, 149b) for inputting and outputting the substrate S. The input / output port 149 is opened and closed by a gate valve (not shown).

[0050] However, consider the comparative example where the transfer chamber is a quadrilateral when viewed from above, as in the past. Here, it can be seen that when the lengths of the pentagon in this embodiment along the X and Y axes are equal to those of the comparative example, the area of ​​the pentagon in this embodiment is smaller.

[0051] Therefore, when the height of the transfer chamber in this method is set to be the same as that in the comparative example, it can be seen that the volume of the transfer chamber in this method is smaller than that in the comparative example. As will be described later, in this method, the environment of the transfer chamber 217 is vented to create a vacuum state, but compared with the conventional quadrilateral, the environment can be vented in a short time.

[0052] The reaction tube housing 206 includes a reaction tube 210, an upstream rectifier 214, and a downstream rectifier 215. Specifically, the reaction tube housing 206a of module 200a includes a reaction tube 210a, an upstream rectifier 214a, and a downstream rectifier 215a. The reaction tube housing 206b of module 200b includes a reaction tube 210b, an upstream rectifier 214b, and a downstream rectifier 215b.

[0053] As described below, the upstream rectifier 214 and the downstream rectifier 215 are positioned opposite each other across the reaction tube 210. An exhaust structure 213 is connected downstream of the downstream rectifier 215. The upstream rectifier 214, the reaction tube 210, the downstream rectifier 215, and the exhaust structure 213 are arranged in a straight line.

[0054] An upstream rectifier 214a, a downstream rectifier 215a, a reaction tube 210a, and a portion of an exhaust structure 213a are disposed within the reaction tube housing 206a. Additionally, an upstream rectifier 214b, a downstream rectifier 215b, a reaction tube 210b, and a portion of an exhaust structure 213b are disposed within the reaction tube housing 206b.

[0055] The exhaust structure 213 is configured as a wall 203 that runs through the housing 201. Specifically, the downstream rectifier 215 of the exhaust structure 213 is disposed inside the housing 201, and the front end of the side different from the downstream rectifier 215 protrudes outward from the wall 203.

[0056] As described below, an exhaust pipe 281 is connected to the housing 241 constituting the exhaust structure 213. The exhaust pipe 281 is located in the exhaust pipe configuration area 228, that is, the area adjacent to the housing 141 and the wall 203. The exhaust pipe 281a connected to the exhaust structure 213a is located in the exhaust pipe configuration area 228a, and the exhaust pipe 281b connected to the exhaust structure 213b is located in the exhaust pipe configuration area 228b. Figure 3 As shown, each exhaust pipe 281 passes through the base plate 101 of the grid structure of the supporting substrate processing apparatus 100, extends to the tool area below the base plate 101, and connects to the pump, etc. Furthermore, the exhaust pipe arrangement area 228a and the exhaust piping arrangement area 228b are also referred to as piping arrangement area a and piping arrangement area b. Additionally, piping arrangement area a and piping arrangement area b are collectively referred to as piping arrangement areas.

[0057] The exhaust pipe configuration area 228 can be any area that can accommodate the exhaust pipe 281, or it can be constructed of a housing and have the exhaust pipe 281 installed therein. In this case, the housing is configured such that the upper part of the housing is adjacent to the reaction tube receiving chamber 206, and the lower part of the housing is adjacent to the housing 141 of the delivery chamber 140.

[0058] The structure is not limited to a walled enclosure; it can also be a structure without walls. In this case, a portion of the base plate 101 through which the exhaust pipe 281 passes is designated as an exhaust pipe configuration area 228. With this structure, the lower part of the enclosure 141 is open to the exhaust pipe configuration area 228. Thus, the maintenance personnel can step on the exhaust pipe configuration area 228, and therefore can perform maintenance on the structure of the vacuum transport robot 180, elevator, and other components of the vacuum transport chamber 140 from the exhaust pipe configuration area 228.

[0059] like Figure 3 As shown, in this configuration, exhaust pipe 281a is connected to the X1 side of exhaust structure 213a via exhaust pipe connector 242a. Exhaust pipe 281b is connected to the X2 side of exhaust structure 213b. That is, they are connected on the side opposite to housing 141. More specifically, exhaust pipes 281a and 281b extend laterally from housing 141. By providing such a structure, space can be ensured between exhaust pipe 281 and housing 141, thus ensuring space for maintenance personnel to enter and perform maintenance on the underside of housing 141. Furthermore, since space can be ensured between exhaust structure 213 and housing 141, even with cover 141a open, maintenance of the interior of housing 141 and vacuum transport robot 180 can be performed from this space. Moreover, since space can be provided on both sides of housing 141, maintenance can be performed from both sides of housing 141. Providing maintenance areas on both sides is effective, for example, when the width of housing 141 in the X-axis direction is large.

[0060] A tool section 500 is located on the inner side (Y2 side) of module 200. The tool section 500 includes an electrical installation box, a gas box, etc. Figure 1 For ease of explanation, only gas box 510 is described in the text.

[0061] The gas chamber 510 houses the gas supply pipes 221 (gas supply pipe 251, gas supply pipe 261) and 281, which will be described later. It also houses a supply pipe heating unit for heating these gas supply pipes, a gas source, and the like.

[0062] Next, the relationship between the housing 141, housing 201, reaction tube 210, upstream rectifier 214, downstream rectifier 215, and exhaust structure 213 will be explained.

[0063] Within the reaction tube housing 206a, the centerline formed by the upstream rectifier 214a, the downstream rectifier 215a, the reaction tube 210a, and the exhaust structure 213a is arranged obliquely relative to the Y-axis. At this time, the extension line of the exhaust structure 213a in the longitudinal direction is arranged so as not to overlap with the housing 141. The center of the reaction tube 210a, viewed from above, is arranged to overlap with the inclined wall 202a in the Y-axis direction. By adopting this structure, the Y1 side of the inclined wall 202a can be used as a dead zone area.

[0064] Similarly, the reaction tube housing 206b is also arranged with its centerline, formed by the upstream rectifier 214b, the downstream rectifier 215b, the reaction tube 210b, and the exhaust structure 213b, inclined relative to the Y-axis. In this case, the extension line of the exhaust structure 213b in the longitudinal direction is arranged so as not to overlap with the housing 141. By configuring it in this way, the Y1 side of the inclined wall 202b can be used as a dead zone area.

[0065] Here, as a comparative example, consider a structure within the reaction tube housing 206a where the centerline of the upstream rectifier 214a, downstream rectifier 215a, reaction tube 210a, and exhaust structure 213a is parallel to the Y-axis. In this structure, either or both of the upstream rectifier 214a and downstream rectifier 215a may overflow from the reaction tube housing 206a. In this case, the influence of the heater 211 is reduced, and the temperature drops in the overflow portion, potentially due to factors such as gas solidification. Alternatively, it is possible to accommodate the upstream rectifier 214a and downstream rectifier 215a within the reaction tube housing 206 by increasing the width in the Y-axis direction (the distance between walls 203 and 205). However, this would also increase the width in the Y-axis direction of the transfer chamber 217 associated with the reaction tube housing 216, thus increasing its cross-sectional area and consequently increasing the volume of the transfer chamber 217. In contrast, if the centerline is tilted as described above, the upstream rectifier 214a and the downstream rectifier 215a can be accommodated without increasing the width in the Y-axis direction, thereby reducing the volume of the transfer chamber 217.

[0066] Furthermore, the inclined walls 202a and 202b in the reaction tube housing 206 provide sufficient space for the cover 141a of the vacuum delivery chamber 140 to rise. Therefore, even when the vacuum delivery chamber 140 has the cover 141a opening upwards, the vacuum reaction chamber 140 can be maintained.

[0067] Next, use Figure 4 The structure of module 200 will be described below. Module 200b will be used as an example. Modules 200a and 200b are linear objects, therefore their description is omitted here. Furthermore, Figure 4 It is along Figure 1 The cross-sectional view of B-B' in the diagram.

[0068] The reaction tube housing 206b of module 200 includes a cylindrical reaction tube 210 extending vertically, a heater 211 disposed on the outer periphery of the reaction tube 210 as a heating section (furnace body), a gas supply structure 212 as a gas supply section, and a gas exhaust structure 213 as a gas exhaust section. The gas supply section may also include an upstream rectifier section 214. In addition, the gas exhaust section may also include a downstream rectifier section 215.

[0069] The gas supply structure 212 is located upstream of the gas flow direction of the reaction tube 210, supplying gas to the reaction tube 210. The gas exhaust structure 213 is located downstream of the gas flow direction of the reaction tube 210, and the gas in the reaction tube 210 is discharged from the gas exhaust structure 213.

[0070] An upstream rectifier 214 is provided between the reaction tube 210 and the gas supply structure 212 to adjust the flow of gas supplied from the gas supply structure 212. Additionally, a downstream rectifier 215 is provided between the reaction tube 210 and the gas exhaust structure 213 to adjust the flow of gas discharged from the reaction tube 210. The lower end of the reaction tube 210 is supported by a manifold 216.

[0071] The reaction tube 210, the upstream rectifier 214, and the downstream rectifier 215 are continuous structures, formed of materials such as quartz and SiC. They are constructed of heat-permeable components that allow heat emitted from the heater 211 to pass through. The heat from the heater 213 heats the substrate S and the gas.

[0072] The gas supply structure 212 is connected to the gas supply pipes 251 and 261, and has a distribution section 225 for distributing the gas supplied from each gas supply pipe. Multiple nozzles 223 and 224 are provided downstream of the distribution section 225. The gas supply pipes 251 and 261 supply different types of gas, as described later. The nozzles 223 and 224 are arranged vertically and laterally. In this embodiment, the gas supply pipes 251 and 261 are collectively referred to as gas supply pipe 221. Each nozzle is also referred to as a gas discharge section.

[0073] The distribution unit 225 is configured to supply gas from the gas supply pipe 251 to the nozzle 223 and from the gas supply pipe 261 to the nozzle 224. For example, a gas flow path is configured for each combination of the gas supply pipe and the nozzle. As a result, the gases supplied from the respective gas supply pipes do not mix, thus suppressing the generation of particles that may be generated due to gas mixing in the distribution unit 225.

[0074] The upstream rectifier 214 has a housing 227 and a dividing plate 226. A portion of the dividing plate 226 opposite the substrate S extends horizontally in a manner at least larger than the diameter of the substrate S. Here, "horizontal" refers to the direction of the sidewall of the housing 227. Multiple dividing plates 226 are arranged vertically. The dividing plates 226 are fixed to the sidewall of the housing 227, configured such that gas does not exceed the dividing plate 226 and move downwards or upwards to adjacent areas. By not exceeding this limit, the airflow described later can be reliably formed.

[0075] The dividing plate 226 is a continuous structure without holes. Each dividing plate 226 is positioned corresponding to the substrate S. Nozzles 223 and 224 are provided between the dividing plates 226 and between the dividing plates 226 and the housing 227.

[0076] The gas discharged from nozzles 223 and 224 has its flow adjusted by the dividing plate 226 and is supplied to the surface of the substrate S. The dividing plate 226 is a continuous structure extending horizontally without holes, thus suppressing the vertical movement of the main gas flow and allowing it to move horizontally. Therefore, the pressure loss of the gas reaching each substrate S can be made uniform throughout the vertical direction.

[0077] The downstream rectifier 215 is configured such that, when the substrate S is supported by the substrate support 300, its top is higher than the uppermost substrate S and its bottom is lower than the lowermost substrate S in the substrate support 300.

[0078] The downstream rectifying section 215 has a housing 231 and a dividing plate 232. The portion of the dividing plate 232 opposite the substrate S extends horizontally in a manner at least larger than the diameter of the substrate S. Here, "horizontal" refers to the direction of the sidewall of the housing 231. Furthermore, multiple dividing plates 232 are arranged vertically. The dividing plates 232 are fixed to the sidewall of the housing 231, configured such that gas does not exceed the dividing plate 232 and move downwards or upwards to adjacent areas. By not exceeding this limit, the airflow described later can be reliably formed. A flange 233 is provided on the side of the housing 231 that contacts the gas exhaust structure 213.

[0079] The dividing plate 232 is a continuous structure without holes. Dividing plates 232 are respectively positioned corresponding to the substrate S and to the dividing plate 226. Preferably, the corresponding dividing plates 226 and 232 are of equal height. Furthermore, when processing the substrate S, it is preferable to make the height of the substrate S consistent with the heights of the dividing plates 226 and 232. With this structure, the gas supplied from each nozzle flows through the dividing plate 226, the substrate S, and the dividing plate 232 as indicated by the arrows in the figure. At this time, the dividing plate 232 is a continuous structure extending horizontally without holes. With this structure, the pressure loss of the gas discharged from each substrate S can be made uniform. Therefore, the vertical flow of gas through each substrate S is suppressed, and it forms horizontally toward the exhaust structure 213.

[0080] By setting the dividing plate 226 and the dividing plate 232, the pressure loss can be made uniform in the vertical direction upstream and downstream of each substrate S, so that a horizontal gas flow that suppresses the vertical flow can be reliably formed on the dividing plate 226, the substrate S, and the dividing plate 232.

[0081] The gas exhaust structure 213 is located downstream of the downstream rectifier 215. The gas exhaust structure 213 mainly consists of a housing 241 and a gas exhaust pipe connection 242. A flange 243 is provided on the downstream rectifier 215 side within the housing 241. The gas exhaust structure 213 is made of metal, while the downstream rectifier 215 is made of quartz; therefore, the flanges 233 and 243 are fixed by screws or the like with a buffer material such as an O-ring. To suppress the influence of the heater 211 on the O-ring, the flange 243 is preferably positioned on the outside of the heater 211.

[0082] The gas exhaust structure 213 is spatially connected to the downstream rectifier section 215. The housing 231 and housing 241 are a height-continuous structure. The top of housing 231 is configured to be the same height as the top of housing 241, and the bottom of housing 231 is configured to be the same height as the bottom of housing 241.

[0083] The gas exhaust structure 213 is a structure without a dividing plate. Therefore, the gas exhaust structure 213 is also called an unobstructed exhaust buffer structure. An exhaust port 244 is provided on the downstream side of the airflow in the gas exhaust structure 213. A gas exhaust pipe connection portion 242 is provided on the outer side of the housing 241 at a position corresponding to the exhaust port 244. In the horizontal direction, the distance from the gas exhaust pipe connection portion 244 to the downstream edge of the substrate S is configured to be longer than the distance from the tip of each nozzle to the upstream edge of the substrate S.

[0084] Gas passing through the downstream rectifier section 215 is discharged from the exhaust port 244. At this time, since the gas exhaust structure does not have a structure like a dividing plate, airflow including the vertical direction is formed towards the gas exhaust port.

[0085] Next, the reason for providing the exhaust buffer structure 215 on the downstream side of the downstream rectifier section 215 will be explained. As described above, the pressure loss in the vertical direction can be made somewhat uniform by using the dividing plate 232, but as it approaches the exhaust port 242, it is easily affected by the exhaust pump 284, and the gas is pulled towards the exhaust port side, making the pressure loss uneven. As a result, it may be impossible to process the substrate S uniformly in the vertical direction.

[0086] Therefore, a downstream rectifier 215 is provided to mitigate the vertical airflow. Specifically, gas moving from the dividing plate 232 to the exhaust buffer structure 215 is discharged through the exhaust port 244. However, since the exhaust port 244 is located at a predetermined distance from the dividing plate 232, the gas flows horizontally accordingly. This predetermined distance refers to, for example, a distance at which a horizontal airflow can be formed on the dividing plate 232. Because the horizontal airflow has a greater influence during this period, the vertical airflow is mitigated compared to the case where the exhaust port 244 is located directly behind the dividing plate 232.

[0087] On the dividing plate 232, the influence of vertical forces is reduced, thus the pressure loss becomes more uniform. As a result, a horizontal airflow can be formed on the dividing plate 232. Therefore, the pressure loss can be kept constant on multiple substrates S arranged along the vertical direction, enabling more uniform processing.

[0088] The transfer chamber 217 is disposed at the lower part of the reaction tube 210 via the manifold 216. In the transfer chamber 217, the substrate S is placed (mounted) on the substrate support (hereinafter sometimes referred to as a boat) 300 by the vacuum transfer robot 180 via the substrate input port 149, or the substrate S is removed from the substrate support 300 by the vacuum transfer robot 180.

[0089] The transfer chamber 217 can accommodate the substrate support 300, the partition plate support 310, and the up-down drive mechanism 400 that constitutes the first drive unit for driving the substrate support 300 and the partition plate support 310 (collectively referred to as the substrate holder) in the up-down and rotational directions. Figure 4 The image shows the substrate holder 300 being raised and housed inside the reaction tube by the up-down driving mechanism 400.

[0090] Next, use Figure 4 , Figure 5 The details of the substrate support portion are explained.

[0091] The substrate support section is composed of at least a substrate support member 300. Inside the transfer chamber 217, the substrate S is transferred via a vacuum transfer robot 180 through the substrate input port 149, or the transferred substrate S is transported to the interior of the reaction tube 210 to form a thin film on the surface of the substrate S. Alternatively, a partition plate support section 310 may be included in the substrate support section.

[0092] The partition plate support 310 has multiple circular partition plates 314 fixed at predetermined intervals on the pillars 313 supported between the base 311 and the top plate 312. The substrate support 300 has the following structure: multiple support rods 315 are supported on the base 301, and multiple substrates S are supported by the multiple support rods 315 at predetermined intervals.

[0093] On the substrate support 300, a plurality of substrates S are mounted at predetermined intervals by a plurality of support rods 315 supported on the base 301. The plurality of substrates S supported by the support rods 315 are separated by circular plate-shaped partition plates 314 fixed (supported) at predetermined intervals on pillars 313 supported on the partition plate support 310. Here, the partition plates 314 are disposed on either or both of the upper and lower parts of the substrates S.

[0094] The predetermined spacing between the plurality of substrates S placed on the substrate support 300 is the same as the vertical spacing between the partition plates 314 fixed to the partition plate support 310. In addition, the diameter of the partition plates 314 is formed to be larger than the diameter of the substrates S.

[0095] The boat 300 supports multiple substrates S, for example, five substrates S, in multiple layers along the vertical direction using multiple support rods 315. The base 301 and the multiple support rods 315 are formed of materials such as quartz and SiC. Here, an example of five substrates S supported on the boat 300 is shown, but it is not limited to this. For example, the boat 300 may be configured to support approximately 5 to 50 substrates S. Furthermore, the partition plate 314 of the partition plate support portion 310 is also referred to as a partition.

[0096] The partition plate support 310 and the substrate support 300 are driven by the up-down direction drive mechanism 400 in the up-down direction between the reaction tube 210 and the transfer chamber 217, and in the rotation direction around the center of the substrate S supported by the substrate support 300.

[0097] The up-down direction drive mechanism 400 constituting the first drive unit includes an up-down drive motor 410, a rotation drive motor 430, and a boat up-down mechanism 420 having a linear actuator that serves as a substrate support lifting mechanism for driving the substrate support 300 in the up-down direction as drive sources.

[0098] The up-and-down drive motor 410, which serves as the lifting mechanism for the partition plate support, drives the ball screw 411 by rotation, causing the nut 412, which is threaded into the ball screw 411, to move up and down along the ball screw 411. As a result, the partition plate support 310, the substrate support 300, and the base plate 402, to which the nut 412 is fixed, are driven vertically between the reaction tube 210 and the transfer chamber 217. The base plate 402 is also fixed to a ball guide 415 that engages with a guide shaft 414, creating a structure that allows smooth vertical movement along the guide shaft 414. The upper and lower ends of the ball screw 411 and the guide shaft 414 are fixed to fixing plates 413 and 416, respectively.

[0099] A rotary drive motor 430 and a boat-and-dish lifting mechanism 420 equipped with a linear actuator constitute a second drive unit, which is fixed to a bottom flange 401 that serves as a cover and is supported by a side plate 403 on a bottom plate 402.

[0100] A rotary drive motor 430 drives a rotary conveyor belt 432 that engages with a toothed portion 431 mounted on the front end, and drives a support member 440 that engages with the rotary conveyor belt 432. The support member 440 supports the partition plate support portion 310 via its base 311 and is driven by the rotary drive motor 430 via the rotary conveyor belt 432, thereby causing the partition plate support portion 310 and the boat 300 to rotate.

[0101] The boat-and-dish lifting mechanism 420, equipped with a linear actuator, drives the shaft 421 in the vertical direction. A plate 422 is mounted on the front end of the shaft 421. The plate 422 is connected to the support portion 441, which is fixed to the base 301 of the boat-and-dish 300, via a bearing 423. By connecting the support portion 441 to the plate 422 via the bearing 423, the boat-and-dish 300 can rotate together with the partition plate support portion 310 when the partition plate support portion 310 is rotated by the rotary drive motor 430.

[0102] On the other hand, the support portion 441 is supported on the support member 440 via a linear guide bearing 442. With such a structure, when the boat-mounting mechanism 420 equipped with a linear actuator drives the shaft 421 in the vertical direction, the support portion 441 fixed to the boat 300 can be driven relative to the support member 440 fixed to the partition plate support portion 310 in the vertical direction.

[0103] The support member 440 fixed to the partition plate support 310 and the support member 441 fixed to the boat 300 are connected by a vacuum bellows 443.

[0104] An O-ring 446 for vacuum sealing is provided on the upper surface of the bottom flange 401, which serves as the cover body. Figure 3As shown, the upper surface of the bottom flange 401 is raised to a position where it is pushed against the transfer chamber 217 by the up-down drive motor 410, thereby keeping the interior of the reaction tube 210 airtight.

[0105] Next, use Figure 6 A detailed description of the gas supply system is provided.

[0106] like Figure 6 As shown in (a), a first gas source 252, a mass flow controller (MFC) 253 (i.e., flow controller (flow control unit)) and a valve 254 (i.e., on / off valve) are sequentially arranged on the gas supply pipe 251 from the upstream direction.

[0107] The first gas source 252 is a first gas source containing a first element (also called "gas containing the first element"). The gas containing the first element is one of the raw material gases, i.e., the processing gases. Here, the first element is, for example, silicon (Si). Specifically, it is a chlorosilane raw material gas containing Si-Cl bonds, such as hexachlorosilane (Si2Cl6, abbreviated as HCDS), monochlorosilane (SiH3Cl, abbreviated as MCS), dichlorosilane (SiH2Cl2, abbreviated as DCS), trichlorosilane (SiHCl3, abbreviated as TCS), tetrachlorosilane (SiCl4, abbreviated as STC), and octachlorotrisilane (Si3Cl8, abbreviated as OCTS).

[0108] The first gas supply system 250 (also known as the silicon-containing gas supply system) is mainly composed of gas supply pipe 251, MFC 253, and valve 254.

[0109] A gas supply pipe 255 is connected downstream of valve 254 in supply pipe 251. An inert gas source 256, an MFC 257, and a valve 258 (i.e., an on / off valve) are sequentially arranged on gas supply pipe 255 from upstream. Inert gas, such as nitrogen (N2), is supplied from inert gas source 256.

[0110] The first inert gas supply system mainly consists of gas supply pipe 255, MFC 257, and valve 258. The inert gas supplied from inert gas source 256 functions as a purge gas to remove residual gas in reaction tube 210 during the substrate processing step. The first inert gas supply system can also be incorporated into the first gas supply system 250.

[0111] like Figure 6 As shown in (b), a second gas source 262, an MFC 263 (i.e., a flow controller, or flow control unit), and a valve 264 (i.e., an on / off valve) are sequentially arranged on the gas supply pipe 261 from the upstream direction.

[0112] Second gas source 262 is a second gas source containing a second element (hereinafter also referred to as "second element-containing gas"). The second element-containing gas is one of the process gases. Furthermore, the second element-containing gas can be considered a reactant gas or a modifying gas.

[0113] Here, the gas containing the second element contains a second element different from the first element. The second element can be, for example, any one of oxygen (O), nitrogen (N), or carbon (C). In this embodiment, the gas containing the second element is, for example, a nitrogen-containing gas. Specifically, it is a hydrogen nitride gas containing an NH bond, such as ammonia (NH3), diazepine (N2H2), hydrazine (N2H4), or N3H8.

[0114] The second gas supply system 260 mainly consists of gas supply pipe 261, MFC 263, and valve 264.

[0115] A gas supply pipe 265 is connected downstream of valve 264 in supply pipe 261. An inert gas source 266, an MFC 267, and valve 268 (i.e., an on / off valve) are sequentially arranged on gas supply pipe 265 from upstream. Inert gas, such as nitrogen (N2), is supplied from inert gas source 266.

[0116] The second inert gas supply system mainly consists of gas supply pipe 265, MFC 267, and valve 268. The inert gas supplied from inert gas source 266 serves as a purge gas to remove residual gas in reaction tube 210 during the substrate processing step. The second inert gas supply system can also be incorporated into the second gas supply system 260.

[0117] like Figure 6 As shown in (c), the gas supply pipe 271 is connected to the transfer chamber 217. From upstream, a third gas source 272, an MFC 273 (flow controller), and a valve 274 (on / off valve) are sequentially arranged on the gas supply pipe 271. Inert gas is supplied when the transfer chamber 217 is in an inert gas environment or a vacuum state.

[0118] The third gas source 272 is an inert gas source. The third gas supply system 270 mainly consists of gas supply pipe 271, MFC 273, and valve 274. The third gas supply system is also called the transfer chamber supply system.

[0119] Next, use Figure 7 The exhaust system will be explained.

[0120] The exhaust system 280 for venting the environment of the reaction tube 210 has an exhaust pipe 281 that communicates with the reaction tube 210 and is connected to the housing 241 via an exhaust pipe connector 242.

[0121] like Figure 7 As shown in (a), a vacuum pump 284, which serves as a vacuum exhaust device, is connected to the exhaust pipe 281 via a valve 282, which acts as an on / off valve, and an APC (Auto Pressure Controller) valve 283, which acts as a pressure regulator (pressure adjustment unit). This configuration enables vacuum exhaust to be performed in such a way that the pressure inside the reaction pipe 210 becomes a predetermined pressure (vacuum level). The exhaust system 280 is also referred to as the processing chamber exhaust system.

[0122] An exhaust system 290 for venting the environment of the transfer chamber 217 is connected to the transfer chamber 217 and has an exhaust pipe 291 communicating with its interior.

[0123] A vacuum pump 294, which serves as a vacuum exhaust device, is connected to the exhaust pipe 291 via valve 292, which acts as an on / off valve, and APC valve 293, thus enabling vacuum exhaust in a manner that achieves a predetermined pressure (vacuum level) within the transfer chamber 217. The exhaust system 290 is also referred to as the transfer chamber exhaust system.

[0124] Next, use Figure 8 The controller will be described below. The substrate processing apparatus 100 has a controller 600 that controls the operation of each part of the substrate processing apparatus 100.

[0125] Figure 6 This represents a general overview of controller 600. Controller 600, or control unit (control unit), is configured as a computer comprising a CPU (Central Processing Unit) 601, RAM (Random Access Memory) 602, a storage unit 603 as a storage unit, and I / O ports 604. RAM 602, storage unit 603, and I / O ports 604 are configured to exchange data with CPU 601 via an internal bus 605. Data transmission and reception within the board processing apparatus 100 are supported by a transceiver instruction unit 606, which functions as a part of CPU 601.

[0126] The controller 600 is equipped with a network transceiver 683 that is connected to the host device 670 via a network. The network transceiver 683 is able to receive from the host device information such as the processing history of the substrate S housed in the cell 111 and information related to the processing schedule.

[0127] The storage unit 603 may be composed of, for example, flash memory or HDD (Hard Disk Drive). The storage unit 603 contains, in a readable manner, control programs that control the operation of the substrate processing apparatus, and process information that records substrate processing steps, conditions, etc.

[0128] Furthermore, the process technology is a combination of steps in the substrate processing steps described later, which enables the controller 600 to execute and obtain a predetermined result, and functions as a program. Hereinafter, the process technology, control program, etc., will also be collectively referred to as a program. Additionally, when the term "program" is used in this specification, it may sometimes include only a single process technology, sometimes only a single control program, or sometimes both. Moreover, RAM 602 is configured as a storage area (working area) for temporarily storing programs, data, etc., read by CPU 601.

[0129] I / O port 604 is connected to various structures of the substrate processing device 100.

[0130] CPU 601 is configured to read and execute control programs from storage unit 603, and to read process data from storage unit 603 based on inputs such as operation commands from input / output device 681. Furthermore, CPU 601 is configured to control substrate processing apparatus 100 according to the read process data.

[0131] CPU 601 includes a transceiver instruction unit 606. The controller 600 can be configured according to this method by using an external storage device (e.g., a hard disk, a DVD, an MO disk, a USB memory, or other semiconductor memory) 682 containing the aforementioned program to install an program in a computer. Furthermore, the means for supplying the program to the computer is not limited to supplying it via the external storage device 682. For example, the program can be supplied without using the external storage device 682 by using communication means such as the Internet or a dedicated line. Additionally, the storage unit 603 and the external storage device 682 constitute a computer-readable recording medium. Hereinafter, they will also be collectively referred to as recording medium. Furthermore, in this specification, when using the term "recording medium," sometimes it includes only the storage unit 603, sometimes only the external storage device 682, or sometimes both.

[0132] Next, as a step in the semiconductor manufacturing process, the process of forming a thin film on the substrate S using the module 200 with the above structure will be described. Furthermore, in the following description, the operation of each part constituting the substrate processing apparatus is controlled by the controller 600.

[0133] Here, use Figure 9 A film-forming process is described in which a film is formed on a substrate S by alternately supplying a first gas and a second gas.

[0134] (S202)

[0135] The pressure adjustment process S202 in the transfer chamber will be explained. Here, the pressure inside the transfer chamber 217 is set to the same level as that in the vacuum transfer chamber 140. Specifically, the exhaust system 290 is activated to exhaust the environment of the transfer chamber 217 in a manner that makes the environment of the transfer chamber 217 a vacuum level. As described above, compared to the past, the volume of the transfer chamber 217 is smaller, thus shortening the time required for venting the environment.

[0136] (S204)

[0137] Next, the input process S204 will be explained.

[0138] After the transfer chamber 217 reaches a vacuum level, the transfer of substrate S begins. After substrate S arrives at vacuum transfer chamber 140, a gate valve (not shown) adjacent to substrate input port 149 is opened, and vacuum transfer robot 180 inputs substrate S into transfer chamber 217.

[0139] At this time, the substrate support 300 is in standby in the transfer chamber 217, and the substrate S is transferred to the substrate support 300. After a predetermined number of substrates S are transferred to the substrate support 300, the vacuum transfer robot 180 is moved back to the housing 141, and the substrate support 300 is raised to move the substrate S into the reaction vessel 210.

[0140] During the movement toward the reaction vessel 210, the substrate S is positioned such that the surface of the substrate S is aligned with the height of the dividing plate 226 and the dividing plate 232.

[0141] (S206)

[0142] The heating process S206 will be described. After the substrate S is introduced into the reaction tube 210, the pressure inside the reaction tube 210 is controlled to a predetermined level, and the surface temperature of the substrate S is controlled to a predetermined temperature. The temperature is, for example, above room temperature and below 700°C, preferably above room temperature and below 550°C. The pressure is considered to be, for example, 50 to 5000 Pa.

[0143] (S208)

[0144] The membrane treatment process S208 is described below. Following the heating process S206, the membrane treatment process S208 is performed. In the membrane treatment process S208, according to the process flow, a first gas is supplied to the reaction tube 210 by controlling the first gas supply system, and the processing space is vented by controlling the exhaust system, thus performing membrane treatment. Alternatively, the second gas supply system can be controlled to allow the second gas and the first gas to coexist in the processing space for CVD treatment, or the first gas and the second gas can be supplied alternately for alternating supply treatment. Furthermore, when the second gas is processed in a plasma state, a plasma generation unit (not shown) can be used to achieve the plasma state.

[0145] As a specific example of the alternating supply process, i.e., the membrane treatment method, consider the following method. For example, in the first step, a first gas is supplied to the reaction tube 210, and in the second step, a second gas is supplied to the reaction tube 210. As a purging step, an inert gas is supplied between the first step and the second step, and the environment of the reaction tube 210 is vented. The alternating supply process, which combines the first step, the purging step and the second step, is performed multiple times to form a Si-containing membrane.

[0146] The supplied gas forms an airflow in the upstream rectifier section 214, the space on the substrate S, and the downstream rectifier section 214. At this time, gas is supplied to the substrate S without pressure loss on each substrate S, thus enabling uniform processing between each substrate S.

[0147] (S210)

[0148] The substrate output process S210 will be described. In S210, the processed substrate S is output to the outside of the transfer chamber 217 in the reverse order of the substrate input process S204 described above.

[0149] (S212)

[0150] The determination S212 will be explained. Here, it is determined whether the substrate has been processed a predetermined number of times. If it is determined that the predetermined number of times has not been processed, the process returns to the input step S204 to process the next substrate S. If it is determined that the predetermined number of times has been processed, the process ends.

[0151] In addition, in the above, the airflow is horizontal, but as long as the main gas flow is formed in the horizontal direction, it can also be an airflow that diffuses in the vertical direction, as long as it does not affect the uniform processing of multiple substrates.

[0152] Furthermore, the above exhibit the same degree, equality, or similarity, but these certainly include substantially the same content.

[0153] (Other methods)

[0154] The above provides a detailed explanation of this method, but it is not limited to this. Various changes can be made without departing from its main purpose.

[0155] Furthermore, for example, the above-described method illustrates the formation of a film on substrate S using a first gas and a second gas in a film-forming process performed in a substrate processing apparatus; however, this method is not limited to this. That is, other types of gases can be used as processing gases for the film-forming process to form other types of thin films. Moreover, even when using three or more processing gases, this method can be applied as long as these processing gases are supplied alternately for the film-forming process. Specifically, the first element can be, for example, various elements such as titanium (Ti), silicon (Si), zirconium (Zr), and hafnium (Hf). The second element can be, for example, nitrogen (N) and oxygen (O).

[0156] Furthermore, for example, in the above-described method, film formation is cited as an example of the processing performed by the substrate processing apparatus, but this method is not limited to this. That is, in addition to the film formation process exemplified in each embodiment, this method can also be applied to film formation processes other than thin films exemplified in each embodiment. Furthermore, the specific content of the substrate processing is not limited; it can be applied not only to film formation processes but also to other substrate processing processes such as annealing, diffusion, oxidation, nitriding, and photolithography. Moreover, this method can also be applied to other substrate processing apparatuses, such as annealing apparatuses, etching apparatuses, oxidation apparatuses, nitriding apparatuses, exposure apparatuses, coating apparatuses, drying apparatuses, heating apparatuses, plasma-based processing apparatuses, and other substrate processing apparatuses. Furthermore, this method can also be combined with these apparatuses. Additionally, a portion of the structure of a certain embodiment can be replaced with the structure of another embodiment, and a structure of another embodiment can be added to the structure of a certain embodiment. Furthermore, for a portion of the structure of each embodiment, other structures can be added, deleted, or replaced.

[0157] Furthermore, for example, in the above-described method, an exhaust section is provided on the Y1 side and a supply section is provided on the Y2 side. However, in this method, for example, a supply section may be provided on the Y1 side and an exhaust section on the Y2 side. In this case, for example, in... Figure 1 In the middle, the structures are replaced as follows.

[0158] The exhaust pipe configuration area 228, which serves as the piping configuration area, is replaced by a supply pipe configuration area capable of arranging a supply pipe. In this case, the supply pipe configuration area is also referred to as the piping configuration area. Furthermore, the gas exhaust section is positioned at an angle inclined relative to the longitudinal direction (Y direction) of the substrate processing apparatus and does not overlap with the housing 141.

[0159] This method is in Figure 1 The following replacement structure is adopted. Specifically, the exhaust structure 213 is replaced with the supply structure 212, the downstream rectifier 215 is replaced with the upstream rectifier 214, and the exhaust pipe 281 is replaced with the supply pipe 221. At this time, each supply pipe 221 (supply pipes 221a, 221b) extends laterally from the vacuum delivery chamber 140.

[0160] Furthermore, it constitutes the Figure 1 The upstream rectifier 214 is replaced with the downstream rectifier 215, the supply structure 212 is replaced with the exhaust structure 213, and the supply pipe 221 is replaced with the exhaust pipe 281.

[0161] As described above, a supply section can also be provided on the Y1 side and an exhaust section on the Y2 side. In these structures, the same effect as described above can also be achieved.

[0162] Symbol Explanation

[0163] S—substrate, 100—substrate processing device, 200—module, 600—controller.

Claims

1. A substrate processing apparatus comprising: The module comprises: a gas supply section having an upstream rectifier section and a supply structure; a reaction tube communicating with the gas supply section; and a gas exhaust section disposed opposite to the upstream rectifier section and having a downstream rectifier section and an exhaust structure. A supply pipe, which is connected to the gas supply unit; An exhaust pipe, which is connected to the gas exhaust section; A transport chamber, which is adjacent to multiple of the aforementioned modules; as well as The piping configuration area, located to the side of the delivery chamber and adjacent to the module, can be configured with the supply pipe or the exhaust pipe. The substrate processing apparatus is characterized in that... The reaction tube is positioned on the longitudinal axis of the substrate processing apparatus, overlapping with the transport chamber. When the supply pipe is installed in the piping configuration area, the gas exhaust section is located at a position where the centerline formed by the upstream rectifier, the reaction pipe, the downstream rectifier, and the exhaust structure is inclined relative to the axis and does not overlap with the delivery chamber. When the exhaust pipe is provided in the piping configuration area, the gas supply unit is located at a position where the center line formed by the upstream rectifier, the reaction pipe, the downstream rectifier, and the exhaust structure is inclined relative to the axis and the center line does not overlap with the delivery chamber.

2. The substrate processing apparatus according to claim 1, characterized in that, It has a transfer chamber located below the reaction tube. The conveying chamber is a vacuum conveying chamber. The transfer chamber is connected to a transfer chamber exhaust system that makes the environment of the transfer chamber a vacuum state, and the transfer chamber is a structure that can communicate with the vacuum delivery chamber.

3. The substrate processing apparatus according to claim 1 or 2, characterized in that, The downstream rectifier is configured to be adjacent to the reaction tube, and the exhaust structure is configured to be disposed downstream of the downstream rectifier.

4. The substrate processing apparatus according to claim 3, characterized in that, The downstream rectifier is made of heat-permeable components, and the exhaust structure is made of metal.

5. The substrate processing apparatus according to claim 3, characterized in that, The gas supply unit includes a distribution section connected to a gas supply pipe on the upstream side, and the distribution section and the exhaust structure are arranged opposite each other.

6. The substrate processing apparatus according to claim 3, characterized in that, The top of the downstream rectifier is configured to be higher than the uppermost substrate in the boat that supports multiple substrates, and the bottom is configured to be lower than the lowermost substrate in the boat. The top of the exhaust structure is continuous with the top of the downstream rectifier, and the bottom of the exhaust structure is continuous with the bottom of the downstream rectifier.

7. The substrate processing apparatus according to claim 6, characterized in that, The downstream rectifier is provided with multiple dividing plates in the vertical direction, and the exhaust structure is configured as an exhaust buffer structure without any obstructions from the top to the bottom.

8. The substrate processing apparatus according to claim 3, characterized in that, The downstream rectifier section is provided with a plurality of dividing plates, which are configured to extend horizontally in a direction opposite to the substrate.

9. The substrate processing apparatus according to claim 1, characterized in that, The gas supply unit has a gas discharge unit. The distance from the edge of the substrate to the connection point of the exhaust pipe is longer than the distance from the front end of the gas discharge section to the edge of the substrate.

10. The substrate processing apparatus according to claim 3, characterized in that, The exhaust pipe is located on the side of the exhaust structure.

11. The substrate processing apparatus according to claim 1, characterized in that, When the supply pipes are installed in the piping configuration area, each of the supply pipes extends laterally from the delivery chamber. When the exhaust pipes are provided in the piping configuration area, each of the exhaust pipes extends laterally from the delivery chamber.

12. The substrate processing apparatus according to claim 1, characterized in that, Equipped with a reaction tube housing chamber to accommodate the reaction tube, The piping configuration area is composed of an enclosure. The upper part of the housing is adjacent to the reaction tube receiving chamber. The lower part of the housing is adjacent to the conveying chamber. The exhaust pipe is configured to extend from the upper part to the lower part.

13. The substrate processing apparatus according to claim 1, characterized in that, The delivery chamber side is open in the piping configuration area.

14. The substrate processing apparatus according to claim 1, characterized in that, The piping configuration areas are arranged to be adjacent to each other across the delivery chamber.

15. The substrate processing apparatus according to claim 1, characterized in that, The module has inclined walls. When multiple modules are provided, the inclined walls of each module are adjacent to each other to form recesses at an obtuse angle. The protrusion of the conveying chamber is configured to fit into the recess.

16. A method for manufacturing a semiconductor device, characterized in that, It has the following processes: A process of inputting a substrate into a reaction tube of a substrate processing apparatus, the substrate processing apparatus comprising: a module having: a gas supply section having an upstream rectifier section and a supply structure; a reaction tube communicating with the gas supply section; and a gas exhaust section disposed opposite to the upstream rectifier section and having a downstream rectifier section and an exhaust structure. A supply pipe, which is connected to the gas supply unit; An exhaust pipe, which is connected to the gas exhaust section; A transport chamber, which is adjacent to multiple of the aforementioned modules; as well as The piping configuration area, located to the side of the delivery chamber and adjacent to the module, can be configured with the supply pipe or the exhaust pipe. The substrate processing apparatus is configured such that the reaction tube is disposed on the axis of the substrate processing apparatus along its length, overlapping with the transport chamber; when the supply pipe is disposed in the piping configuration area, the gas exhaust section is disposed at a position where the centerline formed by the upstream rectifier, the reaction tube, the downstream rectifier, and the exhaust structure is inclined relative to the axis and does not overlap with the transport chamber; when the exhaust pipe is disposed in the piping configuration area, the gas supply section is disposed at a position where the centerline formed by the upstream rectifier, the reaction tube, the downstream rectifier, and the exhaust structure is inclined relative to the axis and does not overlap with the transport chamber; and A process of processing the substrate by simultaneously supplying gas into the reaction tube from the gas supply unit and discharging the gas from the reaction tube.

17. A recording medium that records a program and is readable by a computer, characterized in that, The following steps are performed by the substrate processing apparatus using a computer: The step of inputting a substrate into a reaction tube of a substrate processing apparatus, the substrate processing apparatus comprising: a module having: a gas supply section having an upstream rectifier section and a supply structure; a reaction tube communicating with the gas supply section; and a gas exhaust section disposed opposite to the upstream rectifier section and having a downstream rectifier section and an exhaust structure. A supply pipe, which is connected to the gas supply unit; An exhaust pipe, which is connected to the gas exhaust section; A transport chamber, which is adjacent to multiple of the aforementioned modules; as well as The piping configuration area, located to the side of the delivery chamber and adjacent to the module, can be configured with the supply pipe or the exhaust pipe. The substrate processing apparatus is configured such that the reaction tube is disposed on the axis of the substrate processing apparatus along its length, overlapping with the transport chamber; when the supply pipe is disposed in the piping configuration area, the gas exhaust section is disposed at a position where the centerline formed by the upstream rectifier, the reaction tube, the downstream rectifier, and the exhaust structure is inclined relative to the axis and does not overlap with the transport chamber; when the exhaust pipe is disposed in the piping configuration area, the gas supply section is disposed at a position where the centerline formed by the upstream rectifier, the reaction tube, the downstream rectifier, and the exhaust structure is inclined relative to the axis and does not overlap with the transport chamber; and The step of processing the substrate by simultaneously supplying gas into the reaction tube from the gas supply unit and discharging the gas from the reaction tube.

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