Wafer edge exposure structure, system and method in a coating and developing machine

Abstract

The application discloses a wafer edge exposure structure, a system and an exposure method in a coating developing machine, and is applied to the chip preparation field.The structure comprises a wafer edge exposure device and a light transmission device.The input end of the light transmission device is used for connecting a light beam measurement module of a photoetching machine, splitting light of the light beam measurement module, and obtaining split light beams of the light beam measurement module.The output end of the light transmission device extends to the wafer edge exposure device and is used for transmitting the split light beams to the wafer edge exposure device, so that the wafer edge exposure device takes the split light beams as light beams for wafer edge exposure.The application transmits the split light beams of the light beam measurement module in the photoetching machine to the wafer edge exposure device through the light transmission device, replaces the built-in light source in the original wafer edge exposure device, does not need to regularly maintain the built-in light source in the wafer edge exposure device, reduces the maintenance cost, and improves the stability of the light source in the wafer edge exposure device.

Description

Technical Field

[0001] This invention relates to the field of chip fabrication, and in particular to a wafer edge exposure structure, system, and exposure method in a coating and developing machine. Background Technology

[0002] In existing technologies, a built-in light source, such as a mercury lamp, is used in wafer edge exposure equipment to expose wafers placed in a chuck. However, the built-in light source in the wafer edge exposure equipment has a limited lifespan, and the light intensity changes with the duration of use. Therefore, the wafer edge exposure equipment needs to be maintained regularly to prevent the built-in light source from affecting the accuracy of exposing the wafers in the chuck due to the increased usage time. However, regular maintenance of the wafer edge exposure equipment requires a lot of manpower, which increases the cost of wafer edge exposure processing. Summary of the Invention

[0003] In view of this, the purpose of the present invention is to provide a wafer edge exposure structure, system and exposure method in a coating and developing machine, which solves the problem in the prior art that the wafer edge exposure device requires regular maintenance, which wastes a lot of manpower and increases the cost of wafer edge exposure processing.

[0004] To solve the above-mentioned technical problems, the present invention provides a wafer edge exposure structure in a coating and developing machine, comprising:

[0005] Wafer edge exposure equipment and light transmission equipment;

[0006] The input end of the light transmission device is used to connect to the beam measurement module of the lithography machine, and to split the beam of the beam measurement module to obtain the split beam of the beam measurement module.

[0007] The output end of the light transmission device extends into the wafer edge exposure device to transmit the split beam to the wafer edge exposure device, so that the wafer edge exposure device uses the split beam as the beam for wafer edge exposure.

[0008] Optionally, the wafer edge exposure apparatus includes:

[0009] A filtering module that filters the beam transmitted to the wafer edge exposure apparatus.

[0010] Optionally, the wafer edge exposure apparatus includes:

[0011] The filtering module filters the beam transmitted to the wafer edge exposure apparatus and the focusing module focuses the beam.

[0012] Optional, also includes:

[0013] A shutter control module for controlling the passage of the split beam.

[0014] The present invention also provides a wafer edge exposure system in a coating and developing machine, comprising:

[0015] Wafer edge exposure equipment, lithography machine and light transmission device;

[0016] The lithography machine is equipped with a beam measurement module;

[0017] The light transmission device splits the beam from the beam measurement module to obtain a split beam, and then transmits the split beam to the wafer edge exposure device.

[0018] The wafer edge exposure apparatus uses the split beam as the beam for wafer edge exposure.

[0019] The present invention also provides a wafer edge exposure method, applied to the wafer edge exposure structure in the above-mentioned coating and developing machine, comprising:

[0020] The beam in the beam measurement module of the lithography machine is split by a light transmission device to obtain a split beam.

[0021] The light transmission device is used to transmit the split beam to the wafer edge exposure device;

[0022] The wafer is subjected to edge exposure processing using the beam of light transmitted to the wafer edge exposure apparatus.

[0023] Optionally, the step of performing edge exposure processing on the wafer using the beam splitting transmitted to the wafer edge exposure apparatus includes:

[0024] The beam splitting transmitted to the wafer edge exposure device is filtered to obtain a beam splitting beam with the same wavelength as the predetermined beam wavelength in the wafer edge exposure device.

[0025] The wafer is subjected to edge exposure processing using the same wavelength beam.

[0026] Optionally, the step of performing edge exposure processing on the wafer using the beam splitting transmitted to the wafer edge exposure apparatus includes:

[0027] The beam splitting transmitted to the wafer edge exposure apparatus is focused to obtain an enhanced beam splitting;

[0028] The wafer is subjected to edge exposure processing using the enhanced beam splitter.

[0029] Optionally, the step of performing edge exposure processing on the wafer using the beam splitting transmitted to the wafer edge exposure apparatus includes:

[0030] The shutter control module controls the beam splitting device in the wafer edge exposure apparatus to perform edge exposure processing on the wafer.

[0031] Optionally, the step of using a shutter control module to control the beam splitting in the wafer edge exposure apparatus to perform edge exposure processing on the wafer includes:

[0032] Determine the location of the edge to be exposed in the wafer;

[0033] The shutter control module is opened, and the beam splitting beam transmitted to the wafer edge exposure device is used to perform edge exposure processing on the edge position to be exposed.

[0034] As can be seen, the wafer edge exposure structure in the coating and developing machine provided by this invention includes a wafer edge exposure device and a light transmission device. The input end of the light transmission device is used to connect to the beam measurement module of the lithography machine to split the beam of the beam measurement module, obtaining the split beam of the beam measurement module. The output end of the light transmission device extends into the wafer edge exposure device to transmit the split beam to the wafer edge exposure device, so that the wafer edge exposure device uses the split beam as the beam for wafer edge exposure. This invention transmits the split beam of the beam measurement module in the lithography machine to the wafer edge exposure device through the light transmission device, using it as the beam for wafer edge exposure. This replaces the built-in light source in the original wafer edge exposure device, eliminating the need for regular maintenance of the built-in light source. Only the beam measurement module in the lithography machine needs maintenance, reducing maintenance costs. It also eliminates the need to consider the lifespan of the built-in light source in the original wafer edge exposure device, improving the stability of the light source in the wafer edge exposure device.

[0035] In addition, the present invention also provides a wafer edge exposure system and exposure method in a coating and developing machine, which also has the above-mentioned beneficial effects. Attached Figure Description

[0036] To more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on the provided drawings without creative effort.

[0037] Figure 1 This is a schematic diagram of a wafer edge exposure structure in a coating and developing machine provided by an embodiment of the present invention;

[0038] Figure 2 This is a schematic diagram of the structure of a wafer edge exposure system in a coating and developing machine according to an embodiment of the present invention;

[0039] Figure 3 A flowchart of a wafer edge exposure method provided in an embodiment of the present invention;

[0040] Appendix Figure 1-2 The reference numerals in the attached figures are explained as follows:

[0041] 1-Wafer edge exposure device with built-in light source;

[0042] 2-Rotary chuck;

[0043] 3-Electrically coupled device sensors;

[0044] 4-Lamp Chamber;

[0045] 10 - Light transmission device;

[0046] 20 - Wafer edge exposure apparatus;

[0047] 30 - Lithography machine, 31 - Beam measurement module. Detailed Implementation

[0048] To make the objectives, technical solutions, and advantages of the embodiments of the present invention clearer, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0049] Please refer to Figure 1 , Figure 1 This is a schematic diagram of a wafer edge exposure structure in a coating and developing machine, provided as an embodiment of the present invention. The structure may include:

[0050] Wafer edge exposure device 20 and light transmission device 10;

[0051] The input end of the light transmission device 10 is used to connect to the beam measurement module of the lithography machine, and to split the beam of the beam measurement module to obtain the split beam of the beam measurement module.

[0052] The output end of the light transmission device 10 extends into the wafer edge exposure device 20 to transmit the beam splitting beam to the wafer edge exposure device 20, so that the wafer edge exposure device 20 uses the beam splitting beam as the beam for wafer edge exposure.

[0053] It should be noted that the wafer exposure apparatus in this embodiment does not have a built-in light source. The beam splitting from the beam measurement module in the lithography machine is transmitted to the wafer edge exposure apparatus 20 via the light transmission device 10, serving as the beam used by the wafer edge exposure apparatus 20 to expose the wafer edge. This embodiment does not limit the specific structure of the light transmission device 10, as long as it can transmit the beam splitting from the beam measurement module in the lithography machine to the wafer edge exposure apparatus 20, and the beam splitting in the wafer edge exposure apparatus 20 meets the requirements of the beam used by the wafer edge exposure apparatus 20 for exposing the wafer. For example, in this embodiment, the light transmission device 10 can be constructed using optical fibers, or it can be constructed in other ways. The wavelength of the beam from the beam measurement module of the existing lithography machine is not significantly different from the wavelength of the beam used by the wafer edge exposure apparatus to expose the wafer.

[0054] It should be further explained that, Figure 1 and Figure 2 In the wafer edge exposure apparatus shown, the reference numerals 1 and 4 indicate the locations of the built-in light source and lamp chamber in existing wafer edge exposure structures, respectively. However, the wafer edge exposure structure provided in this invention does not include a built-in light source and lamp chamber. Furthermore, the rotating chuck 2 is used to carry the wafer, and the electro-coupled device sensor 3 is used to detect the shape of the wafer mounted on the rotating chuck 2.

[0055] Furthermore, in order to ensure that the wavelength of the beam transmitted to the wafer edge exposure apparatus 20 is consistent with the wavelength of the beam used to expose the wafer edge in the wafer edge exposure apparatus 20, the wafer edge exposure apparatus 20 may include:

[0056] A filtering module that filters the beam transmitted to the wafer edge exposure apparatus 20.

[0057] It should be noted that in this embodiment, the beam transmitted to the wafer edge exposure apparatus 20 is filtered to obtain a beam with the same wavelength as the beam that exposes the wafer edge in the wafer edge exposure apparatus 20.

[0058] Furthermore, in order to improve the light utilization rate of the beam transmitted to the wafer edge exposure apparatus 20, the wafer edge exposure apparatus 20 may include:

[0059] A filtering module that filters the beam transmitted to the wafer edge exposure apparatus 20, and a focusing module that focuses the beam.

[0060] It should be noted that in this embodiment, the focusing module is a lens structure that enhances the light beam.

[0061] Furthermore, in order to ensure flexible control of the beam splitting transmitted to the wafer edge exposure apparatus 20, the wafer edge exposure structure in the above-mentioned coating and developing machine may also include:

[0062] A shutter control module used to control the passage of the split beam.

[0063] It should be noted that in this embodiment, when the shutter control module is open, the beam splitter passes through; when the shutter control module is closed, the beam splitter is blocked, and exposure of the wafer edge stops. This embodiment does not limit the specific location of the shutter control module, as long as it can control the beam splitter to expose the wafer edge. For example, the shutter control module can be located in the light transmission device 10, or it can be located in the wafer edge exposure device 20.

[0064] The wafer edge exposure structure in the coating and developing machine provided in this embodiment of the invention includes a wafer edge exposure device 20 and a light transmission device 10. The input end of the light transmission device 10 is used to connect to the beam measurement module of the lithography machine to split the beam of the beam measurement module and obtain the split beam of the beam measurement module. The output end of the light transmission device 10 extends into the wafer edge exposure device 20 and is used to transmit the split beam to the wafer edge exposure device 20 so that the wafer edge exposure device 20 uses the split beam as the beam for wafer edge exposure. This invention transmits the split beam from the beam measurement module in the lithography machine to the wafer edge exposure device 20 via the light transmission device 10, serving as the beam for wafer edge exposure in the wafer edge exposure device 20. This replaces the original built-in light source in the wafer edge exposure device 20, eliminating the need for regular maintenance of the built-in light source. Only the beam measurement module in the lithography machine needs maintenance, reducing maintenance costs. It also eliminates the need to consider the lifespan of the original built-in light source in the wafer edge exposure device 20, thus improving the stability of the light source in the wafer edge exposure device 20. This invention, by incorporating a filtering module in the wafer edge exposure apparatus 20 to filter the beam transmitted to the wafer edge exposure apparatus 20, ensures that the wavelength of the beam transmitted to the wafer edge exposure apparatus 20 is consistent with the wavelength of the beam used to expose the wafer edge in the wafer edge exposure apparatus 20. By adding a focusing module in the wafer edge exposure apparatus 20 to focus the beam, the light utilization rate of the beam transmitted to the wafer edge exposure apparatus 20 is improved. By incorporating a shutter control module in the wafer edge exposure structure of the coating and developing machine to control the passage of the beam, the invention enables flexible control of the beam transmitted to the wafer edge exposure apparatus 20.

[0065] The wafer edge exposure system in the coating and developing machine provided in the embodiments of the present invention is described below. The wafer edge exposure system in the coating and developing machine described below can be referred to in correspondence with the wafer edge exposure structure in the coating and developing machine described above.

[0066] Please refer to the details. Figure 2 , Figure 2 This is a schematic diagram of a wafer edge exposure system in a coating and developing machine according to an embodiment of the present invention. The system may include:

[0067] Wafer edge exposure device 20, lithography machine 30 and light transmission device 10;

[0068] The lithography machine 30 is equipped with a beam measurement module 31;

[0069] The light transmission device 10 splits the beam of the beam measurement module 31 to obtain a split beam, and transmits the split beam to the wafer edge exposure device 20.

[0070] The wafer edge exposure apparatus 20 uses a split beam as the beam for wafer edge exposure.

[0071] It should be noted that in this embodiment, the light transmission device 10 splits the light beam of the beam measurement module 31 in the lithography machine 30 to obtain a split beam, and transmits the split beam to the wafer edge exposure device 20 as the beam for exposing the wafer edge in the wafer edge exposure device 20.

[0072] It should be further explained that, Figure 1 and Figure 2 In the wafer edge exposure apparatus shown, the reference numerals 1 and 4 indicate the locations of the built-in light source and lamp chamber in existing wafer edge exposure systems, respectively. However, the wafer edge exposure system provided in this invention does not include a built-in light source and lamp chamber. Furthermore, the rotating chuck 2 is used to carry the wafer, and the electro-coupled device sensor 3 is used to detect the shape of the wafer mounted on the rotating chuck 2.

[0073] Furthermore, in order to ensure that the wavelength of the beam transmitted to the wafer edge exposure apparatus 20 is consistent with the wavelength of the beam used to expose the wafer edge in the wafer edge exposure apparatus 20, the wafer edge exposure apparatus 20 may include:

[0074] A filtering module that filters the beam transmitted to the wafer edge exposure apparatus 20.

[0075] Furthermore, in order to improve the light utilization rate of the beam transmitted to the wafer edge exposure apparatus 20, the wafer edge exposure apparatus 20 may include:

[0076] A filtering module that filters the beam transmitted to the wafer edge exposure apparatus 20, and a focusing module that focuses the beam.

[0077] Furthermore, in order to ensure flexible control of the beam splitting transmitted to the wafer edge exposure apparatus 20, the wafer edge exposure structure in the above-mentioned coating and developing machine may also include:

[0078] A shutter control module used to control the passage of the split beam.

[0079] The wafer edge exposure system in the coating and developing machine provided in this embodiment of the invention includes a wafer edge exposure device 20, a lithography machine 30, and a light transmission device 10. The lithography machine 30 is equipped with a beam measurement module 31. The light transmission device 10 splits the beam from the beam measurement module 31 to obtain a split beam, and transmits the split beam to the wafer edge exposure device 20. The wafer edge exposure device 20 uses the split beam as the beam for wafer edge exposure. This invention transmits the split beam from the beam measurement module 31 in the lithography machine 30 to the wafer edge exposure device 20 via the light transmission device 10, using it as the beam for wafer edge exposure. This replaces the original built-in light source in the wafer edge exposure device 20, eliminating the need for periodic maintenance of the built-in light source. Maintenance is only required on the beam measurement module 31 in the lithography machine 30, reducing maintenance costs. It also eliminates the need to consider the lifespan of the original built-in light source in the wafer edge exposure device 20, thus improving the stability of the light source in the wafer edge exposure device 20. This invention, by incorporating a filtering module in the wafer edge exposure apparatus 20 to filter the beam transmitted to the wafer edge exposure apparatus 20, ensures that the wavelength of the beam transmitted to the wafer edge exposure apparatus 20 is consistent with the wavelength of the beam used to expose the wafer edge in the wafer edge exposure apparatus 20. By adding a focusing module in the wafer edge exposure apparatus 20 to focus the beam, the light utilization rate of the beam transmitted to the wafer edge exposure apparatus 20 is improved. By incorporating a shutter control module in the wafer edge exposure structure of the coating and developing machine to control the passage of the beam, the invention enables flexible control of the beam transmitted to the wafer edge exposure apparatus 20.

[0080] The wafer edge exposure method provided in the embodiments of the present invention is described below. The wafer edge exposure method described below is applied to the wafer edge exposure structure in the above-mentioned coating and developing machine, and can be referred to in correspondence with the wafer edge exposure structure in the coating and developing machine described above.

[0081] Please refer to the details. Figure 3 , Figure 3 A flowchart of a wafer edge exposure method provided in an embodiment of the present invention, the method may include:

[0082] S101: The beam from the beam measurement module in the lithography machine is split by a light transmission device to obtain a split beam.

[0083] This embodiment does not limit the specific method of splitting the beam of the beam measurement module in the lithography machine through the light transmission device, as long as the split beam of the beam measurement module can be obtained.

[0084] S102: The beam splitter is transmitted to the wafer edge exposure device using a light transmission device.

[0085] It should be noted that this embodiment does not limit the specific method of transmitting the split beam to the wafer edge exposure apparatus using a light transmission device, as long as it can transmit the split beam to the wafer edge exposure apparatus. For example, the split beam can be transmitted to the wafer edge exposure apparatus via optical fiber, or other methods that can ensure that the beam loss is within an acceptable range can also be used to transmit the split beam to the wafer edge exposure apparatus.

[0086] S103: The wafer is subjected to edge exposure processing using a beam of light transmitted to the wafer edge exposure device.

[0087] It should be noted that in this embodiment, the wafer, which is set in the exposure spin chuck, is moved to the exposure position in the wafer edge exposure device to perform the exposure process.

[0088] Furthermore, in order to ensure that the wavelength of the beam transmitted to the wafer edge exposure apparatus is consistent with the wavelength of the beam used to expose the wafer edge in the wafer edge exposure apparatus, the above-mentioned edge exposure processing of the wafer using the beam transmitted to the wafer edge exposure apparatus may include the following steps:

[0089] Step S11: Filter the beam transmitted to the wafer edge exposure device to obtain a beam of the same wavelength as the predetermined beam in the wafer edge exposure device.

[0090] Step S12: Use a beam of the same wavelength to perform edge exposure processing on the wafer.

[0091] Furthermore, in order to improve the light utilization rate of the beam splitter transmitted to the wafer edge exposure apparatus, the above-mentioned edge exposure processing of the wafer using the beam splitter transmitted to the wafer edge exposure apparatus may include the following steps:

[0092] Step S21: Focus the beam transmitted to the wafer edge exposure device to obtain an enhanced beam.

[0093] Step S22: Use an enhanced beam splitter to perform edge exposure processing on the wafer.

[0094] Furthermore, in order to ensure flexible control of the beam splitting transmitted to the wafer edge exposure apparatus, the aforementioned edge exposure processing of the wafer using the beam splitting transmitted to the wafer edge exposure apparatus may include:

[0095] The shutter control module controls the beam splitting in the wafer edge exposure device to perform edge exposure processing on the wafer.

[0096] Furthermore, in order to ensure that the shutter control module can control the beam splitter to expose the wafer edge, the above-mentioned method of using the shutter control module to control the beam splitter in the wafer edge exposure device to expose the wafer edge can include the following steps:

[0097] Step S31: Determine the location of the edge to be exposed in the wafer.

[0098] Step S32: Control the shutter control module to open, and use the beam of light transmitted to the wafer edge exposure device to perform edge exposure processing on the edge position to be exposed.

[0099] It should be noted that in this embodiment, the position of the edge of the wafer to be exposed can be determined by a charge-coupled device (CCD) sensor, and the shutter control module can be opened to expose the wafer. In this embodiment, the wafer can be placed on a spin chuck and exposed as it rotates with the spin chuck.

[0100] The wafer edge exposure method provided in this invention includes splitting the beam from the beam measurement module in a lithography machine using a light transmission device to obtain a split beam, transmitting the split beam to a wafer edge exposure device using the light transmission device, and using the split beam in the wafer edge exposure device to perform edge exposure processing on the wafer. This invention transmits the split beam from the beam measurement module in the lithography machine to the wafer edge exposure device using a light transmission device, replacing the built-in light source in the original wafer edge exposure device. This eliminates the need for periodic maintenance of the built-in light source in the wafer edge exposure device; only the beam measurement module in the lithography machine needs maintenance, reducing maintenance costs. It also eliminates the need to consider the lifespan of the built-in light source in the original wafer edge exposure device, improving the stability of the light source in the wafer edge exposure device. Furthermore, this invention filters the beam transmitted to the wafer edge exposure apparatus to obtain a beam with the same wavelength as the predetermined beam in the wafer edge exposure apparatus. This ensures that the wavelength of the beam transmitted to the wafer edge exposure apparatus is consistent with the wavelength of the beam used to expose the wafer edge. By focusing the beam transmitted to the wafer edge exposure apparatus, an enhanced beam is obtained, improving the light utilization rate of the beam transmitted to the wafer edge exposure apparatus. By using a shutter control module to control the beam in the wafer edge exposure apparatus, after determining the position of the edge to be exposed on the wafer, the shutter control module is opened to perform edge exposure processing on the edge position. This allows for flexible control of the beam transmitted to the wafer edge exposure apparatus.

[0101] The various embodiments in this specification are described in a progressive manner, with each embodiment focusing on its differences from other embodiments. Similar or identical parts between embodiments can be referred to interchangeably. For the apparatus disclosed in the embodiments, since it corresponds to the method disclosed in the embodiments, the description is relatively simple; relevant parts can be referred to in the method section.

[0102] Those skilled in the art will further recognize that the units and algorithm steps of the various examples described in conjunction with the embodiments disclosed herein can be implemented in electronic hardware, computer software, or a combination of both. To clearly illustrate the interchangeability of hardware and software, the components and steps of the various examples have been generally described in terms of functionality in the foregoing description. Whether these functions are implemented in hardware or software depends on the specific application and design constraints of the technical solution. Those skilled in the art can use different methods to implement the described functions for each specific application, but such implementations should not be considered beyond the scope of this invention.

[0103] Finally, it should be noted that in this document, relationships such as "first" and "second" are used merely to distinguish one entity or operation from another, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Furthermore, the terms "comprising," "including," or any other variations are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such process, method, article, or apparatus.

[0104] The above provides a detailed description of the wafer edge exposure structure, system, and exposure method in a coating and developing machine provided by the present invention. Specific examples have been used to illustrate the principles and implementation methods of the present invention. The description of the above embodiments is only for the purpose of helping to understand the method and core ideas of the present invention. At the same time, for those skilled in the art, there will be changes in the specific implementation methods and application scope based on the ideas of the present invention. Therefore, the content of this specification should not be construed as a limitation of the present invention.

Claims

1. A wafer edge exposure structure in a coating and developing machine, characterized by, The application relates to a wafer edge exposure device and a light transmission device. The input end of the light transmission device is used for connecting a light beam measurement module of a photoetching machine, splitting light of the light beam measurement module to obtain split light beams of the light beam measurement module. The output end of the light transmission device extends into the wafer edge exposure device and is used for transmitting the split light beams to the wafer edge exposure device so that the wafer edge exposure device uses the split light beams as light beams for wafer edge exposure. A filter module is used for filtering the split light beams transmitted to the wafer edge exposure device to obtain split light beams with the same wavelength as the light beams used for exposing the wafer edge in the wafer edge exposure device. The wafer edge exposure device comprises the filter module and a focusing module used for focusing the split light beams.

2. The wafer edge exposure structure in a coating developing machine according to claim 1, wherein The application further relates to a shutter control module used for controlling the split light beams. The application relates to a wafer edge exposure device, a photoetching machine and a light transmission device.

3. The wafer edge exposure structure in a coating developing machine according to claim 1, wherein The photoetching machine is provided with a light beam measurement module. The light transmission device splits light beams of the light beam measurement module to obtain split light beams and transmits the split light beams to the wafer edge exposure device.

4. A wafer edge exposure system in a coat-developer, characterized by, The wafer edge exposure device uses the split light beams as light beams for wafer edge exposure. The application relates to a wafer edge exposure device, a photoetching machine and a light transmission device. The light transmission device splits light beams of the light beam measurement module to obtain split light beams and transmits the split light beams to the wafer edge exposure device. The wafer edge exposure device uses the split light beams as light beams for wafer edge exposure. The application relates to a wafer edge exposure device, a photoetching machine and a light transmission device.

5. A wafer edge exposure method applied to a wafer edge exposure structure of the coating and developing machine according to any one of claims 1 to 3, characterized by, The light transmission device splits light beams of the light beam measurement module to obtain split light beams and transmits the split light beams to the wafer edge exposure device. The wafer edge exposure device uses the split light beams as light beams for wafer edge exposure. The application relates to a wafer edge exposure device, a photoetching machine and a light transmission device. The light transmission device splits light beams of the light beam measurement module to obtain split light beams and transmits the split light beams to the wafer edge exposure device. The wafer edge exposure device uses the split light beams as light beams for wafer edge exposure.

6. The wafer edge exposure method according to claim 5, wherein The application relates to a wafer edge exposure device, a photoetching machine and a light transmission device. The light transmission device splits light beams of the light beam measurement module to obtain split light beams and transmits the split light beams to the wafer edge exposure device. The wafer edge exposure device uses the split light beams as light beams for wafer edge exposure.

7. The wafer edge exposure method according to claim 5, wherein The application relates to a wafer edge exposure device, a photoetching machine and a light transmission device. The light transmission device splits light beams of the light beam measurement module to obtain split light beams and transmits the split light beams to the wafer edge exposure device.

8. The wafer edge exposure method according to claim 7, wherein The wafer edge exposure device uses the split light beams as light beams for wafer edge exposure. The application relates to a wafer edge exposure device, a photoetching machine and a light transmission device. The light transmission device splits light beams of the light beam measurement module to obtain split light beams and transmits the split light beams to the wafer edge exposure device. The wafer edge exposure device uses the split light beams as light beams for wafer edge exposure. The application relates to a wafer edge exposure device, a photoetching machine and a light transmission device. The light transmission device splits light beams of the light beam measurement module to obtain split light beams and transmits the split light beams to the wafer edge exposure device. The wafer edge exposure device uses the split light beams as light beams for wafer edge exposure. The application relates to a wafer edge exposure device, a photoetching machine and a light transmission device. The light transmission device splits light beams of the light beam measurement module to obtain split light beams and transmits the split light beams to the wafer edge exposure device. The wafer edge exposure device uses the split light beams as light beams for wafer edge exposure. The application relates to a wafer edge exposure device, a photoetching machine and a light transmission device. The light transmission device splits light beams of the light beam measurement module to obtain split light beams and transmits the split light beams to the wafer edge exposure device. The wafer edge exposure device uses the split light beams as light beams for wafer edge exposure. The application relates to a wafer edge exposure device, a photoetching machine and a light transmission device. The light transmission device splits light beams of the light beam measurement module to obtain split light beams and transmits the split light beams to the wafer edge exposure device. The wafer edge exposure device uses the split light beams as light beams for wafer edge exposure. The application relates to a wafer edge exposure device, a photoetching machine and a light transmission device. The light transmission device splits light beams of the light beam measurement module to obtain split light beams and transmits the split light beams to the wafer edge exposure device. The wafer edge exposure device uses the split light beams as light beams for wafer edge exposure. The application relates to a wafer edge exposure device, a photoetching machine and a light transmission device. The light transmission device splits light beams of the light beam measurement module to obtain split light beams and transmits the split light beams to the wafer edge exposure device. The wafer edge exposure device uses the split light beams as light beams for wafer edge exposure. The application relates to a wafer edge exposure device, a photoetching machine and a light transmission device. The light transmission device splits light beams of the light beam measurement module to obtain split light beams and transmits the split light beams to the wafer edge exposure device. The wafer edge exposure device uses the split light beams as light beams for wafer edge exposure. The application relates to a wafer edge exposure device, a photoetching machine and a light transmission device. The light transmission device splits light beams of the light beam measurement module to obtain split light beams and transmits the split light beams to the wafer edge exposure device. The wafer edge exposure device uses the split light beams as light beams for wafer edge exposure. The application relates to a wafer edge exposure device, a photoetching machine and a light transmission device. The light transmission device splits light beams of the light beam measurement module to obtain split light beams and transmits the split light beams to the wafer edge exposure device. The wafer edge exposure device uses the split light beams as light beams for wafer edge exposure. The application relates to a wafer edge exposure device, a photoetching machine and a light transmission device. The light transmission device splits light beams of the light beam measurement module to obtain split light beams and transmits the split light beams to the wafer edge exposure device. The wafer edge exposure device uses the split light beams as light beams for wafer edge exposure. The application relates to a wafer edge exposure device, a photoetching machine and a light transmission device. The light transmission device splits light beams of the light beam measurement module to obtain split light beams and transmits the split light beams to the wafer edge exposure device. The wafer edge exposure device uses the split light beams as light beams for wafer edge exposure. The application relates to a wafer edge exposure device, a photoetching machine and a light transmission device. The light transmission device splits light beams of the light beam measurement module to obtain split light beams and transmits the split light beams to the wafer edge exposure device. The wafer edge exposure device uses the split light beams as light beams for wafer edge exposure. The application relates to a wafer edge exposure device, a photoetching machine and a light transmission device. The light transmission device splits light beams of the light beam measurement module to obtain split light beams and transmits the split light beams to the wafer edge exposure device. The wafer edge exposure device uses the split light beams as light beams for wafer edge exposure. The application relates to a wafer edge exposure device, a photoetching machine and a light transmission device. The light transmission device splits light beams of the light beam measurement module to obtain split light beams and transmits the split light beams to the wafer edge exposure device. The wafer edge exposure device uses the split light beams as light beams for wafer edge exposure. The application relates to a wafer edge exposure device, a photoetching machine and a light transmission device. The light transmission device splits light beams of the light beam measurement module to obtain split light beams and transmits the split light beams to the wafer edge exposure device. The wafer edge exposure device uses the split light beams as light beams for wafer edge exposure. The application relates to a wafer edge exposure device, a photoetching machine and a light transmission device. The light transmission device splits light beams of the light beam measurement module to obtain split light beams and transmits the split light beams to the wafer edge exposure device. The wafer edge exposure device uses the split light beams as light beams for wafer edge exposure. The application relates to a wafer edge exposure device, a photoetching machine and a light transmission device. The light transmission device splits light beams of the light beam measurement module to obtain split light beams and transmits the split light beams to the wafer edge exposure device. The wafer edge exposure device uses the split light beams as light beams for wafer edge exposure. The application relates to a wafer edge exposure device, a photoetching machine and a light transmission device. The light transmission device splits light beams of the light beam measurement

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