Deposition equipment and deposition methods

Abstract

This invention discloses a deposition apparatus and deposition method. The deposition apparatus includes a cavity, a platform, a spray head, a bias power supply, a first injection device, and a second injection device. The platform and the spray head are disposed within the cavity, and the platform is used to support a substrate with a high aspect ratio structure. The bias power supply is coupled to the platform. The first injection device and the second injection device are connected to the cavity. The first injection device injects a first precursor or a first inert gas into the cavity through the spray head along a first direction, and the second injection device injects a second precursor or a second inert gas into the cavity along a second direction perpendicular to the first direction. When the first precursor or the second precursor is injected into the cavity, the bias power supply is turned on. When the first inert gas or the second inert gas is injected into the cavity, the bias power supply is turned off.

Description

Technical Field

[0001] This invention relates to a deposition apparatus and a deposition method, and more particularly to an atomic layer deposition apparatus and an atomic layer deposition method. Background Technology

[0002] Atomic layer deposition (ALD) and plasma-assisted atomic layer deposition (PEALD) are widely used in semiconductor manufacturing processes to form thin films with uniform thickness and coverage across the entire surface of a substrate. Atomic layer deposition is similar to conventional chemical vapor deposition (CVD).

[0003] Taking a substrate with a high aspect ratio structure as an example, atomic layer deposition (ALD) technology injects the precursor along the horizontal direction. Although it can form a thin film with uniform thickness in a high aspect ratio structure, the growth rate in the vertical direction is poor, resulting in a failure to improve coating efficiency. In contrast, plasma-assisted atomic layer deposition (PAD) technology injects the precursor along the vertical direction. Although it can accelerate the growth rate in the vertical direction, the thickness of the thin film formed in a high aspect ratio structure is uneven, resulting in a failure to improve coating uniformity. Summary of the Invention

[0004] This invention relates to a deposition apparatus and deposition method that helps improve coating efficiency and uniformity.

[0005] According to an embodiment of the present invention, a deposition apparatus is suitable for atomic layer deposition of high aspect ratio structures. The deposition apparatus includes a cavity, a platform, a spray head, a bias power supply, a first injection device, and a second injection device. The platform and the spray head are disposed within the cavity, and the platform is used to support a substrate having a high aspect ratio structure. The bias power supply is coupled to the platform. The first injection device and the second injection device are connected to the cavity, wherein the first injection device is used to inject a first precursor or a first inert gas into the cavity through the spray head along a first direction, and the second injection device is used to inject a second precursor or a second inert gas into the cavity along a second direction perpendicular to the first direction. The first injection device and the second injection device sequentially inject the first precursor and the second precursor into the cavity through the spray head and the second precursor, respectively. When the first precursor or the second precursor is injected into the cavity, the bias power supply is turned on. After the first precursor or the second precursor is injected into the cavity, the first injection device injects the first inert gas into the cavity or the second injection device injects the second inert gas into the cavity, and the bias power supply is turned off.

[0006] According to an embodiment of the present invention, the deposition method includes the following steps: Injecting a first precursor into a cavity along a first direction and turning on a bias power supply to attract the first precursor onto a substrate having a high aspect ratio. Injecting a second precursor into the cavity along a second direction perpendicular to the first direction and turning on a bias power supply to attract the second precursor onto the substrate having a high aspect ratio. Injecting a first inert gas into the cavity along the first direction and turning off the bias power supply to remove excess first precursor, excess second precursor, or byproducts. Injecting a second inert gas into the cavity along the second direction and turning off the bias power supply to remove excess first precursor, excess second precursor, or byproducts.

[0007] To make the above features and advantages of the present invention more apparent and understandable, specific embodiments are described below in conjunction with the accompanying drawings. Attached Figure Description

[0008] Figures 1A to 1H These are schematic diagrams of deposition apparatuses according to the first to eighth embodiments of the present invention;

[0009] Figures 2A to 2E This is a partially enlarged schematic diagram of the deposition process of a high aspect ratio structure according to an embodiment of the present invention;

[0010] Figure 3A This is a schematic flowchart of the deposition method for the first embodiment of the present invention.

[0011] Figure 3B yes Figure 3A A timeline diagram of the deposition method;

[0012] Figure 4A This is a schematic flowchart of the deposition method for the second embodiment of the present invention;

[0013] Figure 4B yes Figure 4A A timeline diagram of the deposition method;

[0014] Figure 5A This is a schematic flowchart of the deposition method for the third embodiment of the present invention;

[0015] Figure 5B yes Figure 5A A timeline diagram of the deposition method;

[0016] Figure 6A This is a schematic flowchart of the deposition method for the fourth embodiment of the present invention;

[0017] Figure 6B yes Figure 6A A timeline diagram of the deposition method;

[0018] Figure 7AThis is a schematic flowchart of the deposition method for the fifth embodiment of the present invention;

[0019] Figure 7B yes Figure 7A A timeline diagram of the deposition method. Detailed Implementation

[0020] Figures 1A to 1H These are schematic diagrams of deposition apparatuses according to the first to eighth embodiments of the present invention. Please refer to them. Figure 1A In this embodiment, the deposition apparatus 100 can be an atomic layer deposition apparatus, and is suitable for atomic layer deposition of high aspect ratio structures. Specifically, the deposition apparatus 100 includes a cavity 110, a platform 120, a spray head 25, a bias power supply 130, a first injection device 140, and a second injection device 150, wherein the platform 120 is disposed within the cavity 110, and the substrate 10 is disposed on the platform 120. Furthermore, the substrate 10 has multiple high aspect ratio structures 11, such as blind vias or trenches.

[0021] The spray head 25 is disposed within the cavity 110 corresponding to the first injection device 140 and located above the platform 120. The first injection device 140 and the second injection device 150 are connected to the cavity 110. The first injection device 140 is used to inject the first precursor 20 or the first inert gas 21 evenly into the cavity 110 through the spray head 25 along a first direction D1, and the second injection device 150 is used to inject the second precursor 30 or the second inert gas 31 into the cavity 110 along a second direction D2 perpendicular to the first direction D1. Furthermore, the first precursor 20 is evenly injected into the cavity 110 along the first direction D1 (e.g., the vertical direction) through the spray head 25 and flows toward the substrate 10 to form a vertical flow, thus helping to accelerate the growth rate of the film in the vertical direction. Conversely, the second precursor 30 is injected into the cavity 110 along the second direction D2 (e.g., the horizontal direction) and flows through the substrate 10 to form a cross-flow, thus helping to improve the uniformity of the film formed in the high aspect ratio structure 11.

[0022] During the process of the first precursor 20 being evenly injected into the cavity 110 through the spray head 25, the first precursor 20 forms a single atomic layer of chemical adsorption on the surface of the substrate 10 and the inner wall surface of the high aspect ratio structure 11, thereby generating functional groups on the surface of the substrate 10 and the inner wall surface of the high aspect ratio structure 11. This is the first half-reaction step. During the process of the second precursor 30 being injected into the cavity 110, the second precursor 30 reacts with the functional groups of the first precursor 20 located on the surface of the substrate 10 and the inner wall surface of the high aspect ratio structure 11 to form a single atomic layer. This is the second half-reaction step.

[0023] In other words, in the first half-reaction step and the second half-reaction step, the first precursor 20 and the second precursor 30 are injected into the cavity 110 in two different directions, which not only helps to improve the coating efficiency, but also helps to improve the uniformity of the film formed in the high aspect ratio structure 11.

[0024] like Figure 1A As shown, the bias power supply 130 is electrically coupled to the platform 120. When the first precursor 20 or the second precursor 30 is injected into the cavity 110, the bias power supply 130 is turned on to apply a bias to the platform 120 and the substrate 10 thereon. Under the bias, the first precursor 20 or the second precursor 30 is attracted to the substrate 10 and moves into the high aspect ratio structure 11, thus helping to improve the coating efficiency and uniformity.

[0025] After the first precursor 20 or the second precursor 30 is injected into the cavity 110, the first injection device 140 injects the first inert gas 21 into the cavity 110 or the second injection device 150 injects the second inert gas 31 into the cavity 110, and the bias power supply 130 is turned off, so as to facilitate the removal or unblocking of the first precursor 20 or the second precursor 30 blocking the opening of the high aspect ratio structure 11, and to allow the first precursor 20 or the second precursor 30 to fall smoothly into the high aspect ratio structure 11.

[0026] Furthermore, the first inert gas 21 is injected into the cavity 110 along the first direction D1 (e.g., the vertical direction) and flows towards the substrate 10 to accelerate the first precursor 20 or the second precursor 30 into the high aspect ratio structure 11 and cover the inner wall surface of the high aspect ratio structure 11, while removing excess first or second precursor; this is the first cleaning step. Conversely, the second inert gas 31 is injected into the cavity 110 along the second direction D2 (e.g., the horizontal direction) and flows through the substrate 10 to remove or unclog the first precursor 20 or the second precursor 30 blocking the openings of the high aspect ratio structure 11; this is the second cleaning step.

[0027] In the deposition process of the first embodiment, the first half-reaction step, the second cleaning step, the second half-reaction step, and the first cleaning step are executed sequentially and twice.

[0028] In the deposition process of the second embodiment, the first half-reaction step and the second cleaning step are executed sequentially and twice. Then, the second half-reaction step and the first cleaning step are executed sequentially and twice.

[0029] In the deposition process of the third embodiment, the first half-reaction step, the first cleaning step, the second half-reaction step, and the second cleaning step are executed sequentially and twice.

[0030] In the deposition process of the fourth embodiment, the first half-reaction step, the first cleaning step, the second half-reaction step and the first cleaning step are executed sequentially, followed by the first half-reaction step, the second cleaning step, the second half-reaction step and the second cleaning step being executed sequentially.

[0031] In the deposition process of the fifth embodiment, the first half-reaction step and the first cleaning step are executed sequentially and twice. Then, the second half-reaction step and the second cleaning step are executed sequentially and twice.

[0032] Please refer to Figure 1A A schematic diagram of the deposition apparatus of the first embodiment is shown below. In this embodiment, the deposition apparatus 100 further includes an RF power supply 160 and a vacuum device 170. The RF power supply 160 is electrically coupled to the first injection device 140 or electrically coupled to the spray head 25. The RF power supply 160 is turned on when the first precursor 20 is injected, generating plasma to accelerate the dissociation reaction of the first precursor 20. Simultaneously, the bias power supply 130 can be turned on to apply a bias to the platform 120 and the substrate 10 thereon. Under the bias, the first precursor 20 is attracted to the substrate 10 and moves into the high aspect ratio structure 11, which helps to improve the deposition efficiency and uniformity. In addition, the vacuum device 170 is connected to the cavity 110 and generates a vacuum airflow 40 in the second direction D2. After the deposition process is completed, the vacuum device 170 is turned on to remove excess first precursor 20 and / or excess second precursor 30 and / or byproducts from the cavity 110.

[0033] Please refer to Figure 1B A schematic diagram of a deposition apparatus according to a second embodiment, wherein deposition apparatus 100A and Figure 1A The difference between the deposition apparatus 100 in the first embodiment is that the deposition apparatus 100A further includes a first heater 180 thermally coupled to the first injection device 140 and a second heater 181 thermally coupled to the second injection device 150. Furthermore, when the first precursor 20 is injected into the cavity 110, the first heater 180 is turned on and heats the first precursor 20 to provide the energy required for the reaction of the first precursor 20. Additionally, when the second precursor 30 is injected into the cavity 110, the second heater 181 is turned on and heats the second precursor 30 to provide the energy required for the reaction of the second precursor 30.

[0034] Please refer to Figure 1C A schematic diagram of a deposition apparatus according to a third embodiment, wherein deposition apparatus 100B and Figure 1A The difference between the deposition apparatus 100 in the first embodiment is that the deposition apparatus 100B further includes a low-pressure chamber 101 connected to the cavity 110, wherein a vacuum pump 170 is connected to the low-pressure chamber 101, and the vacuum pump 170 evacuates the low-pressure chamber 101 to maintain the low-pressure chamber 101 in a near-vacuum state, for example, 10.-4 torr.

[0035] Furthermore, the extraction device 170 is indirectly connected to the cavity 110 via the low-pressure cavity 101, and the pressure in the low-pressure cavity 101 is lower than the pressure in the cavity 110. That is, there is a pressure difference between the cavity 110 and the low-pressure cavity 101. Further, the deposition apparatus 100B also includes a valve 102 disposed between the cavity 110 and the low-pressure cavity 101. During the deposition process, the valve 102 is closed. After the deposition process is completed, the valve 102 is opened to connect the cavity 110 and the low-pressure cavity 101, and an extraction airflow 40 is generated in the second direction D2 to quickly extract excess first precursor 20 and / or excess second precursor 30 and / or byproducts from the cavity 110.

[0036] Please refer to Figure 1D A schematic diagram of the deposition apparatus of the fourth embodiment, wherein the deposition apparatus 100C and Figure 1C The difference between the deposition apparatus 100B in the third embodiment and the other is that the deposition apparatus 100C further includes a first heater 180 thermally coupled to the first injection device 140 and a second heater 181 thermally coupled to the second injection device 150. The deposition apparatus 100C has a low-pressure chamber 101 connected to the chamber 110, and when the first precursor 20 is injected into the chamber 110, the first heater 180 is turned on and heats the first precursor 20 to provide the energy required for the reaction of the first precursor 20. Additionally, when the second precursor 30 is injected into the chamber 110, the second heater 181 is turned on and heats the second precursor 30 to provide the energy required for the reaction of the second precursor 30.

[0037] Please refer to Figure 1E A schematic diagram of the deposition apparatus of the fifth embodiment, wherein the deposition apparatus 100D and Figure 1A The difference between the deposition apparatus 100 in the first embodiment lies in the design of the flow paths of the first precursor 20 and the suction airflow 40. In this embodiment, the cavity 110 is internally configured with a plurality of alternating air intake channels 111 and a plurality of air extraction channels 112, and the plurality of air intake channels 111 and the plurality of air extraction channels 112 are located above the platform 120. In this embodiment, the plurality of air intake channels 111 and the plurality of air extraction channels 112 are located between the first injection device 140 and the platform 120.

[0038] Specifically, the first injection device 140 is connected to the plurality of air intake channels 111, and the first precursor 20 flows to the substrate 10 through the plurality of air intake channels 111. On the other hand, the suction device 170 is connected to the plurality of suction channels 112 to generate a suction airflow 40 in the first direction D1. After the deposition process is completed, the suction device 170 is activated to remove excess first precursor 20 and / or excess second precursor 30 and / or byproducts from the cavity 110.

[0039] Please refer to Figure 1F A schematic diagram of the deposition apparatus of the sixth embodiment, wherein the deposition apparatus 100E and Figure 1E The difference between the deposition apparatus 100D in the fifth embodiment is that the deposition apparatus 100E further includes a first heater 180 thermally coupled to the first injection device 140 and a second heater 181 thermally coupled to the second injection device 150. Furthermore, when the first precursor 20 is injected into the cavity 110, the first heater 180 is turned on and heats the first precursor 20 to provide the energy required for the reaction of the first precursor 20. Additionally, when the second precursor 30 is injected into the cavity 110, the second heater 181 is turned on and heats the second precursor 30 to provide the energy required for the reaction of the second precursor 30.

[0040] Please refer to Figure 1G A schematic diagram of the deposition apparatus of the seventh embodiment, wherein the deposition apparatus 100F and Figure 1E The difference between the deposition apparatus 100D in the fifth embodiment is that the deposition apparatus 100F further includes a low-pressure chamber 101 connected to the cavity 110, wherein a vacuum pump 170 is connected to the low-pressure chamber 101, and the vacuum pump 170 evacuates the low-pressure chamber 101 to maintain the low-pressure chamber 101 in a near-vacuum state, for example, 10 -4 torr.

[0041] Furthermore, the extraction device 170 is indirectly connected to the cavity 110 via the low-pressure cavity 101, and the pressure in the low-pressure cavity 101 is lower than the pressure in the cavity 110. That is, there is a pressure difference between the cavity 110 and the low-pressure cavity 101. Further, the deposition apparatus 100B also includes a valve 102 disposed between the cavity 110 and the low-pressure cavity 101. During the deposition process, the valve 102 is closed. After the deposition process is completed, the valve 102 is opened to connect the cavity 110 and the low-pressure cavity 101, and an extraction airflow 40 is generated in the first direction D1 to quickly extract excess first precursor 20 and excess second precursor 30 from the cavity 110.

[0042] Please refer to Figure 1H A schematic diagram of the deposition apparatus of the eighth embodiment, wherein the deposition apparatus 100G and Figure 1GThe difference between the deposition apparatus 100F in the seventh embodiment is that the deposition apparatus 100G further includes a first heater 180 thermally coupled to the first injection device 140 and a second heater 181 thermally coupled to the second injection device 150. The deposition apparatus 100G includes a low-pressure chamber 101 connected to the chamber 110, and when the first precursor 20 is injected into the chamber 110, the first heater 180 is turned on and heats the first precursor 20 to provide the energy required for the reaction of the first precursor 20. Additionally, when the second precursor 30 is injected into the chamber 110, the second heater 181 is turned on and heats the second precursor 30 to provide the energy required for the reaction of the second precursor 30.

[0043] Figures 2A to 2E This is a partially enlarged schematic diagram of the deposition process of a high aspect ratio structure according to an embodiment of the present invention. Please refer to... Figure 1A and Figure 2A First, the first precursor 20 is evenly injected into the cavity 110 through the spray head 25 along the first direction D1 and flows towards the substrate 10. Then, as... Figure 2B As shown, the second inert gas 31 is injected into the cavity 110 along the second direction D2 to clear or unblock the first precursor 20 blocking the opening of the high aspect ratio structure 11, so that the first precursor 20 falls smoothly into the high aspect ratio structure 11, as... Figure 2A and Figure 2B As shown. Next, please refer to... Figure 1A and Figure 2C The second precursor 30 is injected into the cavity 110 along the second direction D2 and flows through the substrate 10. Then, as... Figure 2D As shown, the first inert gas 21 is injected evenly into the cavity 110 along the first direction D1 through the spray head 25 and flows towards the substrate 10 to accelerate the second precursor 30 into the high aspect ratio structure 11 and cover the inner wall surface of the high aspect ratio structure 11, such as... Figure 2C and Figure 2D As shown. Finally, a thin film 50 of uniform thickness is formed in the high aspect ratio structure 11, and excess first precursor 20 and excess second precursor 30 and / or byproducts are extracted, as shown. Figure 2E As shown.

[0044] Figure 3A This is a schematic flowchart of the deposition method for the first embodiment of the present invention. Figure 3B yes Figure 3A A timeline diagram of the deposition method is shown. Please refer to... Figure 3A and Figure 3B The deposition method can be performed by any one of deposition equipment 100 and deposition equipment 100A to 100G.

[0045] Specifically, the deposition method of the first embodiment of the present invention includes a first reaction step and a second reaction step, such as... Figure 3A and Figure 3B As shown, where:

[0046] The first reaction step is to sequentially execute the first half-reaction step S1 (injecting the first precursor 20 along the first direction D1 and turning on the bias power supply 130) and the second purging step S2 (injecting the second inert gas 31 along the second direction D2 and turning off the bias power supply 130).

[0047] The second reaction step is to sequentially perform the second half-reaction S3 (injecting the second precursor 30 along the second direction D2 and turning on the bias power supply 130) and the first purging step S4 (injecting the first inert gas 21 along the first direction D1 and turning off the bias power supply 130).

[0048] like Figure 3A and Figure 3B The deposition method of the first embodiment of the present invention shown comprises alternating execution of the first reaction step and the second reaction step twice. That is, the first half-reaction step S1, the second scavenging step S2, the second half-reaction step S3, and the first scavenging step S4 are executed sequentially, and then the first half-reaction step S1, the second scavenging step S2, the second half-reaction step S3, and the first scavenging step S4 are executed sequentially again. Finally, a scavenging and evacuation step (i.e., a purging step S5) is performed. In the purging step S5, an inert gas (e.g., a first inert gas 21 or a second inert gas 31) is injected to remove excess first precursor 20, excess second precursor 30, or other byproducts, and the cavity 110 is evacuated to remove excess first precursor 20, excess second precursor 30, or other byproducts from the cavity 110. The purging step S5 may be omitted, and the present invention is not limited thereto.

[0049] Figure 4A This is a schematic flowchart of the deposition method for the second embodiment of the present invention. Figure 4B yes Figure 4A A timeline diagram of the deposition method is shown. Please refer to... Figure 4A and Figure 4B The deposition method can be performed by any one of deposition equipment 100 and deposition equipment 100A to 100G.

[0050] Specifically, the deposition method of the second embodiment of the present invention includes a first reaction step and a second reaction step, such as... Figure 4A and Figure 4B As shown, where:

[0051] The first reaction step is to sequentially execute the first half-reaction step S1 (injecting the first precursor 20 along the first direction D1 and turning on the bias power supply 130) and the second purging step S2 (injecting the second inert gas 31 along the second direction D2 and turning off the bias power supply 130).

[0052] The second reaction step is to sequentially perform the second half-reaction S3 (injecting the second precursor 30 along the second direction D2 and turning on the bias power supply 130) and the first purging step S4 (injecting the first inert gas 21 along the first direction D1 and turning off the bias power supply 130).

[0053] like Figure 4A and Figure 4B The deposition method of the second embodiment of the present invention shown comprises the following steps: first, performing the first reaction step twice, and then performing the second reaction step twice. That is, first, the first half-reaction step S1, the second scavenging step S2, the first half-reaction step S1, and the second scavenging step S2 are performed sequentially; then, the second half-reaction step S3, the first scavenging step S4, the second half-reaction step S3, and the first scavenging step S4 are performed sequentially. Finally, a scavenging and evacuation step (i.e., a purge step S5) is performed. In the evacuation step S5, an inert gas (e.g., a first inert gas 21 or a second inert gas 31) is injected to remove excess first precursor 20, excess second precursor 30, or other byproducts, and the cavity 110 is evacuated to remove excess first precursor 20, excess second precursor 30, or other byproducts from the cavity 110. The evacuation step S5 may be omitted, and the present invention is not limited thereto.

[0054] Figure 5A This is a schematic flowchart of the deposition method for the third embodiment of the present invention. Figure 5B yes Figure 5A A timeline diagram of the deposition method is shown. Please refer to... Figure 5A and Figure 5B The deposition method can be performed by any one of deposition equipment 100 and deposition equipment 100A to 100G.

[0055] Specifically, the deposition method of the third embodiment of the present invention includes a first reaction step and a second reaction step, such as... Figure 5A and Figure 5B As shown, where:

[0056] The first reaction step is to sequentially execute the first half-reaction step S1 (injecting the first precursor 20 along the first direction D1 and turning on the bias power supply 130) and the first purging step S4 (injecting the first inert gas 21 along the first direction D1 and turning off the bias power supply 130).

[0057] The second reaction step is to sequentially perform the second half-reaction S3 (injecting the second precursor 30 along the second direction D2 and turning on the bias power supply 130) and the second purging step S2 (injecting the second inert gas 31 along the second direction D2 and turning off the bias power supply 130).

[0058] like Figure 5A and Figure 5BThe deposition method of the third embodiment of the present invention shown comprises alternating execution of the first reaction step and the second reaction step twice. That is, the first half-reaction step S1, the first scavenging step S4, the second half-reaction step S3, and the second scavenging step S2 are executed sequentially, and then the first half-reaction step S1, the first scavenging step S4, the second half-reaction step S3, and the second scavenging step S2 are executed sequentially again. Finally, a scavenging and evacuation step (i.e., a purging step S5) is performed. In the purging step S5, an inert gas (e.g., a first inert gas 21 or a second inert gas 31) is injected to remove excess first precursor 20, excess second precursor 30, or other byproducts, and the cavity 110 is evacuated to remove excess first precursor 20, excess second precursor 30, or other byproducts from the cavity 110. The purging step S5 may be omitted, and the present invention is not limited thereto.

[0059] Figure 6A This is a schematic flowchart of the deposition method for the fourth embodiment of the present invention. Figure 6B yes Figure 6A A time-series diagram of the deposition method. The deposition method can be performed by any of deposition equipment 100 and deposition equipment 100A to 100G.

[0060] Specifically, the deposition method of the fourth embodiment of the present invention includes a first reaction step to a fourth reaction step, as follows: Figure 6A and Figure 6B As shown, where:

[0061] The first reaction step is to sequentially execute the first half-reaction step S1 (injecting the first precursor 20 along the first direction D1 and turning on the bias power supply 130) and the first purging step S4 (injecting the first inert gas 21 along the first direction D1 and turning off the bias power supply 130).

[0062] The second reaction step is to sequentially perform the second half-reaction S3 (inject the second precursor 30 along the second direction D2 and turn on the bias power supply 130) and the first cleanup step S4.

[0063] The third reaction step is to sequentially execute the first half-reaction step S1 and the second purging step S2 (injecting the second inert gas 31 along the second direction D2 and turning off the bias power supply 130);

[0064] The fourth reaction step involves sequentially performing the second half-reaction S3 and the second scavenging step S2.

[0065] The deposition method for the fourth embodiment of the present invention comprises sequentially performing the first reaction step to the fourth reaction step. For example... Figure 6BAs shown, the first half-reaction step S1 and the first scavenging step S4 are executed sequentially, followed by the second half-reaction step S3 and the first scavenging step S4, then the first half-reaction step S1 and the second scavenging step S2, and then the second half-reaction step S3 and the second scavenging step S2. Finally, a scavenging and evacuation step (i.e., a cleaning step S5) is performed. In the cleaning step S5, an inert gas (e.g., a first inert gas 21 or a second inert gas 31) is injected to remove excess first precursor 20, excess second precursor 30, or other byproducts, and the cavity 110 is evacuated to remove excess first precursor 20, excess second precursor 30, or other byproducts from the cavity 110. The cleaning step S5 may be omitted, and the invention is not limited thereto.

[0066] Figure 7A This is a schematic flowchart of the deposition method for the fifth embodiment of the present invention. Figure 7B yes Figure 7A A timeline diagram of the deposition method.

[0067] Specifically, the deposition method of the fifth embodiment of the present invention includes a first reaction step and a second reaction step, such as... Figure 7A and Figure 7B As shown, where:

[0068] The first reaction step is to sequentially execute the first half-reaction step S1 (injecting the first precursor 20 along the first direction D1 and turning on the bias power supply 130) and the first purging step S4 (injecting the first inert gas 21 along the first direction D1 and turning off the bias power supply 130).

[0069] The second reaction step is to sequentially perform the second half-reaction S3 (injecting the second precursor 30 along the second direction D2 and turning on the bias power supply 130) and the second purging step S2 (injecting the second inert gas 31 along the second direction D2 and turning off the bias power supply 130).

[0070] The deposition method for the fifth embodiment of the present invention comprises performing the first reaction step twice, followed by performing the second reaction step twice. For example... Figure 7BAs shown, the first half-reaction step S1, the first scavenging step S4, the first half-reaction step S1 and the first scavenging step S4 are executed sequentially first, followed by the second half-reaction step S3, the second scavenging step S2, the second half-reaction step S3 and the second scavenging step S2 sequentially. Finally, the scavenging and evacuation steps (i.e., the cleaning step S5) are performed. In the cleaning step S5, an inert gas (e.g., the first inert gas 21 or the second inert gas 31) is injected to remove excess first precursor 20, excess second precursor 30 or other byproducts, and the cavity 110 is evacuated to remove excess first precursor 20, excess second precursor 30 or other byproducts from the cavity 110. The cleaning step S5 may be omitted, and the present invention is not limited thereto.

[0071] In summary, the deposition apparatus and method of the present invention inject a first precursor and a second precursor into a cavity in two mutually perpendicular directions. The first precursor forms a vertical flow toward the substrate, while the second precursor forms a cross-flow passing through the substrate. The alternating vertical and cross-flows not only accelerate the film growth rate in the vertical direction but also improve the uniformity of the film formed in a high aspect ratio structure. Furthermore, during the alternating vertical and cross-flows, a bias power supply is activated and applied to the platform and the substrate thereon. Under this bias, the first and second precursors are attracted to the substrate and moved into the high aspect ratio structure, thus contributing to improved deposition efficiency and uniformity.

[0072] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, and not to limit them; although the present invention has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some or all of the technical features; and these modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present invention.

Claims

1. A deposition method suitable for atomic layer deposition of high aspect ratio structures, wherein the deposition method comprises: injecting a first precursor into a chamber along a first direction and turning on a bias power supply to attract the first precursor to a surface of a substrate having the high aspect ratio structures; injecting a second precursor into the chamber along a second direction perpendicular to the first direction and turning on the bias power supply to attract the second precursor to the substrate having the high aspect ratio structures, wherein the first direction is a vertical direction and the second direction is a horizontal direction; injecting a first inert gas into the chamber along the first direction and turning off the bias power supply to purge excess of the first precursor or excess of the second precursor or byproducts in the high aspect ratio structures; and injecting a second inert gas into the chamber along the second direction and turning off the bias power supply to purge excess of the first precursor or excess of the second precursor or byproducts in the high aspect ratio structures, wherein, the steps of injecting the first precursor into the chamber and injecting the second precursor into the chamber are performed sequentially and alternately to form a thin film of uniform thickness within the high aspect ratio structures, the bias power supply is turned on to attract the first precursor or the second precursor by biasing when the first precursor or the second precursor is injected for deposition reaction, wherein, the first precursor, the second inert gas, the second precursor and the first inert gas are injected into the chamber sequentially.

2. The deposition method of claim 1, wherein sequentially injecting the first precursor into the chamber and injecting the second inert gas into the chamber is a first reaction step, and sequentially injecting the second precursor into the chamber and injecting the first inert gas into the chamber is a second reaction step, and the first reaction step and the second reaction step are performed alternately for two times.

3. The deposition method of claim 1, wherein sequentially injecting the first precursor into the chamber and injecting the second inert gas into the chamber is a first reaction step, and sequentially injecting the second precursor into the chamber and injecting the first inert gas into the chamber is a second reaction step, and the first reaction step is performed for two times first, and then the second reaction step is performed for two times.

4. The deposition method of claim 1, further comprising: generating a pumping gas flow to the chamber along the first direction or the second direction to pump away excess of the first precursor or excess of the second precursor from the chamber.

5. The deposition method of claim 1, further comprising: heating the first precursor; and heating the second precursor.

6. The deposition method of claim 1, further comprising: turning on a radio frequency power supply to accelerate reaction of the first precursor. ​ ​

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