A semiconductor laser device having a Frankel defect layer

Abstract

The present invention provides a semiconductor laser device provided with a Frenkel defect layer, which relates to the technical field of semiconductor optoelectronic devices. It sequentially includes a substrate, a lower confinement layer, a lower waveguide layer, an active layer, an upper waveguide layer, an electron blocking layer, and an upper confinement layer from bottom to top. A Frenkel defect layer is provided above the upper confinement layer; the Frenkel defect layer is above the upper confinement layer, and the Frenkel defect layer is above the upper confinement layer, inducing the generation of chemical bonding interfaces and second-phase coherent interfaces, adjusting the interfacial energy band bending, overpotential, and interfacial phonon scattering, generating interfacial charge transfer, efficiently desorbing hydrogen atoms, forming H2 to discharge from the surface, enhancing the ionization rate of the p-type doping element in the upper confinement layer and reducing the acceptor activation energy of the doping element, enhancing the hole concentration in the upper confinement layer, enhancing the efficiency and transport efficiency of hole injection into the active layer, and enhancing the peak gain and slope efficiency of the laser device.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor optoelectronic devices, and more particularly, to a semiconductor laser element provided with a Frenkel defect layer. Background Art

[0002] Lasers are widely used in the fields of laser display, laser TV, laser projector, communication, medical treatment, weapons, guidance, ranging, spectral analysis, cutting, precision welding, high-density optical storage, etc. There are many types of lasers, and the classification methods are also diverse. The main types include solid-state, gas, liquid, semiconductor, and dye lasers. Compared with other types of lasers, all-solid-state semiconductor lasers have the advantages of small size, high efficiency, light weight, good stability, long life, simple and compact structure, and miniaturization. There are significant differences between lasers and nitride semiconductor light-emitting diodes: 1) Laser is generated by stimulated emission of carriers, with a relatively small spectral full width at half maximum, high brightness, and the output power of a single laser can be in the watt level, while nitride semiconductor light-emitting diodes are spontaneous emission, and the output power of a single light-emitting diode is in the milliwatt level; 2) The operating current density of lasers reaches kA / cm2, which is more than two orders of magnitude higher than that of nitride light-emitting diodes, resulting in stronger electron leakage, more severe Auger recombination, stronger polarization effects, and more serious electron-hole mismatch, leading to a more serious efficiency droop effect; 3) Light-emitting diodes undergo spontaneous transition radiation, and without external action, the incoherent light transitions from a high energy level to a low energy level, while lasers are stimulated transition radiation, and the energy of the induced photon should be equal to the energy difference between the electron transitions, generating photons that are identical and coherent to the induced photons; 4) The principles are different: Light-emitting diodes undergo radiative recombination and luminescence when electrons and holes transition to quantum wells or p-n junctions under the action of an external voltage, while lasers require lasing conditions to be met before lasing can occur. It must satisfy the condition of inverted carrier distribution in the active region, and the stimulated emission light oscillates back and forth in the resonant cavity. The propagation in the gain medium amplifies the light, and when the threshold condition is met, the gain is greater than the loss, and finally, laser light is output. Nitride semiconductor lasers have the following problems: 1) Problems such as low Mg solubility, high Mg ionization energy, high acceptor activation energy, and low Mg ionization efficiency in the p-type contact layer of traditional nitride semiconductors result in a generally low free hole concentration below 5E17 cm -3; In particular, the ionization energy and acceptor activation energy of Mg gradually increase with the increase of the Al component, resulting in a further decrease in the hole density of the electron blocking layer, upper confinement layer, and contact layer. 2) The optical waveguide absorption loss is high. Intrinsic carbon impurities in the p-type semiconductor will compensate for acceptors and destroy the p-type, etc. The ionization rate of p-type doping is low. A large number of un-ionized Mg acceptor impurities will cause an increase in internal optical loss. Moreover, the refractive index dispersion of the laser, the high-concentration carrier concentration fluctuation affects the refractive index of the active layer, and the confinement factor decreases with the increase of wavelength, resulting in a decrease in the mode gain of the laser; 3) The Mg acceptor activation energy of the p-type semiconductor is large and the ionization efficiency is low. The hole concentration is much lower than the electron concentration, and the hole mobility is much smaller than the electron mobility. Moreover, problems such as the quantum well polarization electric field enhancing the hole injection barrier and holes spilling out of the active layer, uneven hole injection and low efficiency, lead to a serious asymmetry and mismatch between electrons and holes in the quantum well, electron leakage and carrier delocalization. It is more difficult for holes to transport in the quantum well, and the carrier injection is uneven and the gain is uneven. At the same time, the gain spectrum of the laser becomes wider and the peak gain decreases, resulting in an increase in the threshold current of the laser and a decrease in the slope efficiency. Summary of the Invention

[0003] The object of the present invention is to provide a semiconductor laser device provided with a Frenkel defect layer, which solves the problems existing in the prior art.

[0004] A semiconductor laser device provided with a Frenkel defect layer includes, from bottom to top in sequence, a substrate, a lower confinement layer, a lower waveguide layer, an active layer, an upper waveguide layer, an electron blocking layer, an upper confinement layer, and a Frenkel defect layer is provided above the upper confinement layer.

[0005] As a preferred technical solution of the present invention, the Frenkel defect layer is any combination of two or more of ZnIn2S4, In2O3, MnIn2S4, FeIn2S4, CoIn2S4, In2S3, and CuInS2.

[0006] As a preferred technical solution of the present invention, any combination of the Frenkel defect layers includes the following binary combination of heterojunctions, superlattices, quantum wells, core-shell structures, quantum dot structures: ZnIn2S4 / In2O3, ZnIn2S4 / MnIn2S4, ZnIn2S4 / FeIn2S4, ZnIn2S4 / CoIn2S4, ZnIn2S4 / In2S3, ZnIn2S4 / CuInS2, In2O3 / MnIn2S4, In2O3 / FeIn2S4, In2O3 / CoIn2S4, In2O3 / In2S3, In2O3 / CuInS2, MnIn2S4 / FeIn2S4, MnIn2S4 / CoIn2S4, MnIn2S4 / In2S3, MnIn2S4 / CuInS2, FeIn2S4 / CoIn2S4, FeIn2S4 / In2S3, FeIn2S4 / CuInS2, CoIn2S4 / In2S3, CoIn2S4 / CuInS2, In2S3 / CuInS2.

[0007] As a preferred technical solution of the present invention, any combination of the Frenkel defect layers includes the following ternary combination of heterojunctions, superlattices, quantum wells, core-shell structures, and quantum dot structures: ZnIn2S4 / In2O3 / MnIn2S4, ZnIn2S4 / In2O3 / FeIn2S4, ZnIn2S4 / In2O3 / CoIn2S4, ZnIn2S4 / In2O3 / In2S3, ZnIn2S4 / In2O3 / CuInS2, ZnIn2S4 / MnIn2S4 / FeIn2S4, ZnIn2S4 / MnIn2S4 / CoIn2S4, ZnIn2S4 / MnIn2S4 / In2S3, ZnIn2S4 / MnIn2S4 / CuInS2, ZnIn2S4 / FeIn2S4 / CoIn2S4, ZnIn2S4 / FeIn2S4 / In2S3, ZnIn2S4 / FeIn2S4 / CuInS2, ZnIn2S4 / CoIn2S4 / In2S3, ZnIn2S4 / CoIn2S4 / CuInS2, ZnIn2S4 / In2S3 / CuInS2, In2O3 / MnIn2S4 / FeIn2S4, In2O3 / MnIn2S4 / CoIn2S4, In2O3 / MnIn2S4 / In2S3, In2O3 / MnIn2S4 / CuInS2, In2O3 / FeIn2S4 / CoIn2S4, In2O3 / FeIn2S4 / In2S3, In2O3 / FeIn2S4 / CuInS2, MnIn2S4 / FeIn2S4 / CoIn2S4, MnIn2S4 / FeIn2S4 / In2S3, MnIn2S4 / FeIn2S4 / CuInS2, MnIn2S4 / CoIn2S4 / In2S3, MnIn2S4 / CoIn2S4 / CuInS2, MnIn2S4 / In2S3 / CuInS2, FeIn2S4 / CoIn2S4 / In2S3, FeIn2S4 / CoIn2S4 / CuInS2, FeIn2S4 / In2S3 / CuInS2, CoIn2S4 / In2S3 / CuInS 24 。

[0008] As a preferred technical solution of the present invention, any combination of the Frenkel defect layers includes the following four-element combination of heterojunctions, superlattices, quantum wells, core-shell structures, and quantum dot structures: ZnIn2S4 / In2O3 / MnIn2S4 / FeIn2S4, ZnIn2S4 / In2O3 / MnIn2S4 / CoIn2S4, ZnIn2S4 / In2O3 / MnIn2S4 / In2S3, ZnIn2S4 / In2O3 / MnIn2S4 / CuInS2, ZnIn2S4 / MnIn2S4 / FeIn2S4 / CoIn2S4, ZnIn2S4 / MnIn2S4 / FeIn2S4 / In2S3, ZnIn2S4 / MnIn2S4 / FeIn2S4 / CuInS2, ZnIn2S4 / FeIn2S4 / CoIn2S4 / In2S3, ZnIn2S4 / FeIn2S4 / CoIn2S4 / CuInS2, ZnIn2S4 / CoIn2S4 / In2S3 / CuInS2, In2O3 / MnIn2S4 / FeIn2S4 / CoIn2S4, In2O3 / MnIn2S4 / FeIn2S4 / In2S3, In2O3 / MnIn2S4 / FeIn2S4 / CuInS2, In2O3 / FeIn2S4 / In2S3 / CuInS2, MnIn2S4 / FeIn2S4 / CoIn2S4 / In2S3, MnIn2S4 / FeIn2S4 / CoIn2S4 / CuInS2。

[0009] As a preferred technical solution of the present invention, any combination of the Frenkel defect layers includes the following heterojunctions, superlattices, quantum wells, core-shell structures, and quantum dot structures of five-element, six-element, and seven-element combinations: ZnIn2S4 / In2O3 / MnIn2S4 / FeIn2S4 / CoIn2S4, ZnIn2S4 / In2O3 / MnIn2S4 / FeIn2S4 / In2S3, ZnIn2S4 / In2O3 / MnIn2S4 / FeIn2S4 / CuInS2, ZnIn2S4 / MnIn2S4 / FeIn2S4 / CoIn2S4 / In2S3, ZnIn2S4 / MnIn2S4 / FeIn2S4 / CoIn2S4 / CuInS2, ZnIn2S4 / FeIn2S4 / CoIn2S4 / In2S3 / CuInS2, In2O3 / MnIn2S4 / FeIn2S4 / CoIn2S4 / In2S3, In2O3 / MnIn2S4 / FeIn2S4 / CoIn2S4 / CuInS2, In2O3 / FeIn2S4 / CoIn2S4 / In2S3 / CuInS2,MnIn2S4 / FeIn2S4 / CoIn2S4 / In2S3 / CuInS2, ZnIn2S4 / In2O3 / MnIn2S4 / FeIn2S4 / CoIn2S4 / In2S3,ZnIn2S4 / In2O3 / MnIn2S4 / FeIn2S4 / CoIn2S4 / CuInS2, In2O3 / MnIn2S4 / FeIn2S4 / CoIn2S4 / In2S3 / CuInS2, ZnIn2S4 / In2O3 / MnIn2S4 / FeIn2S4 / CoIn2S4 / In2S3 / CuInS4。

[0010] As a preferred technical solution of the present invention, the Frenkel defect layer is above the upper confinement layer, efficiently desorbing hydrogen atoms to form a surface for H2 discharge, enhancing the ionization rate of the p-type doping element in the upper confinement layer and reducing the acceptor activation energy of the doping element, and enhancing the hole concentration in the upper confinement layer.

[0011] As a preferred technical solution of the present invention, the substrate includes any one of sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, sapphire / SiO2 composite substrate, sapphire / AlN composite substrate, sapphire / SiNx, sapphire / SiO2 / SiNx composite substrate, magnesium aluminate spinel MgAl2O4, MgO, ZnO, ZrB2, LiAlO2, and LiGaO2 composite substrate.

[0012] Compared with the prior art, the beneficial effects of the present invention are as follows:

[0013] In the solution of the present invention:

[0014] Compared with the prior art, the Frenkel defect layer is above the upper confinement layer, inducing the generation of a chemical bonding interface and a second-phase coherent interface, regulating the interface energy band bending, overpotential and interface phonon scattering, generating a strong interface coupling effect and interface charge transfer, efficiently desorbing hydrogen atoms, forming H2 to discharge from the surface, enhancing the ionization rate of the p-type doping element in the upper confinement layer and reducing the acceptor activation energy of the doping element, increasing the hole concentration in the upper confinement layer, enhancing the efficiency and transport efficiency of hole injection into the active layer, and enhancing the peak gain and slope efficiency of the laser element; at the same time, reducing the internal optical loss generated by the un-ionized Mg acceptor impurities and enhancing the mode gain of the laser element.

[0015] BRIEF DESCRIPTION OF THE DRAWINGS

[0016] Figure 1 It is a schematic structural diagram of a semiconductor laser element provided with a Frenkel defect layer according to the present invention.

[0017] The labels in the figure are as follows:

[0018] 100: Substrate; 101: Lower confinement layer; 102: Lower waveguide layer; 103: Active layer; 104: Upper waveguide layer, 105: Electron blocking layer, 106: Upper confinement layer, 107: Frenkel defect layer. DETAILED DESCRIPTION OF THE EMBODIMENTS

[0019] To make the objectives, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings. Obviously, the described embodiments are some, but not all, of the embodiments of the present invention.

[0020] Therefore, the following detailed description of the embodiments of the present invention is not intended to limit the scope of the claimed present invention, but merely represents some embodiments of the present invention. All other embodiments obtained by those of ordinary skill in the art based on the embodiments of the present invention without creative efforts shall fall within the scope of protection of the present invention.

[0021] It should be noted that, without conflict, the embodiments in the present invention and the features and technical solutions in the embodiments may be combined with each other.

[0022] Embodiment 1

[0023] Please refer to Figure 1, this embodiment provides a technical solution: a semiconductor laser element with a Frenkel defect layer, which sequentially includes a substrate 100, a lower confinement layer 101, a lower waveguide layer 102, an active layer 103, an upper waveguide layer 104, an electron blocking layer 105, and an upper confinement layer 106 from bottom to top. A Frenkel defect layer 107 is provided above the upper confinement layer 106.

[0024] The Frenkel defect layer 107 is any one of ZnIn2S4, In2O3, MnIn2S4, FeIn2S4, CoIn2S4, In2S3, and CuInS2.

[0025] The Frenkel defect layer 107 is above the upper confinement layer 106, efficiently desorbs hydrogen atoms to form H2 discharged from the surface, improves the ionization rate of the p-type doping element in the upper confinement layer and reduces the acceptor activation energy of the doping element, and improves the hole concentration in the upper confinement layer.

[0026] The lower confinement layer 101, the lower waveguide layer 102, the active layer 103, the upper waveguide layer 104, the electron blocking layer 105, and the upper confinement layer 106 include any one or any multi-element combination of GaN, AlGaN, InGaN, AlInGaN, AlN, InN, AlInN, SiC, Ga2O3, BN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, AlInAs, AlInP, AlGaP, and InGaP.

[0027] The substrate 100 includes any one of sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, sapphire / SiO2 composite substrate, sapphire / AlN composite substrate, sapphire / SiNx, sapphire / SiO2 / SiNx composite substrate, magnesium aluminate spinel MgAl2O4, MgO, ZnO, ZrB2, LiAlO2, and LiGaO2 composite substrate.

[0028] Embodiment 2

[0029] Please refer to Figure 1 , this embodiment provides a technical solution: a semiconductor laser element with a Frenkel defect layer, a semiconductor laser element with a Frenkel defect layer, which sequentially includes a substrate 100, a lower confinement layer 101, a lower waveguide layer 102, an active layer 103, an upper waveguide layer 104, an electron blocking layer 105, and an upper confinement layer 106 from bottom to top. A Frenkel defect layer 107 is provided above the upper confinement layer 106.

[0030] The Frenkel defect layer 107 is above the upper confinement layer 106, efficiently desorbing hydrogen atoms to form an H2 emission surface, enhancing the ionization rate of the p-type doping element in the upper confinement layer and reducing the acceptor activation energy of the doping element, and enhancing the hole concentration in the upper confinement layer.

[0031] Any combination of the Frenkel defect layers includes the following heterojunctions, superlattices, quantum wells, core-shell structures, quantum dot structures of binary combinations: ZnIn2S4 / In2O3, ZnIn2S4 / MnIn2S4, ZnIn2S4 / FeIn2S4, ZnIn2S4 / CoIn2S4, ZnIn2S4 / In2S3, ZnIn2S4 / CuInS2, In2O3 / MnIn2S4, In2O3 / FeIn2S4, In2O3 / CoIn2S4,In2O3 / In2S3, In2O3 / CuInS2, MnIn2S4 / FeIn2S4, MnIn2S4 / CoIn2S4, MnIn2S4 / In2S3, MnIn2S4 / CuInS2, FeIn2S4 / CoIn2S4, FeIn2S4 / In2S3, FeIn2S4 / CuInS2, CoIn2S4 / In2S3, CoIn2S4 / CuInS2, In2S3 / CuInS2.

[0032] The lower confinement layer 101, the lower waveguide layer 102, the active layer 103, the upper waveguide layer 104, the electron blocking layer 105, and the upper confinement layer 106 include any one or any multiple combinations of GaN, AlGaN, InGaN, AlInGaN, AlN, InN, AlInN, SiC, Ga2O3, BN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlInGaP, InGaAs, AlInAs, AlInP, AlGaP, InGaP.

[0033] The substrate 100 includes any one of sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, sapphire / SiO2 composite substrate, sapphire / AlN composite substrate, sapphire / SiNx, sapphire / SiO2 / SiNx composite substrate, magnesium aluminate spinel MgAl2O4, MgO, ZnO, ZrB2, LiAlO2, and LiGaO2 composite substrate.

[0034] Example 3

[0035] Please refer to Figure 1, this embodiment provides a technical solution: a semiconductor laser element provided with a Frenkel defect layer. A semiconductor laser element provided with a Frenkel defect layer includes a substrate 100, a lower confinement layer 101, a lower waveguide layer 102, an active layer 103, an upper waveguide layer 104, an electron blocking layer 105, and an upper confinement layer 106 in sequence from bottom to top. A Frenkel defect layer 107 is provided above the upper confinement layer 106.

[0036] The Frenkel defect layer 107 is above the upper confinement layer 106, efficiently desorbs hydrogen atoms to form H2 discharged from the surface, improves the ionization rate of the p-type doping element in the upper confinement layer and reduces the acceptor activation energy of the doping element, and improves the hole concentration in the upper confinement layer.

[0037] Any combination of the Frankel defect layers 107 includes the following ternary combinations of heterojunctions, superlattices, quantum wells, core-shell structures, and quantum dot structures: ZnIn2S4 / In2O3 / MnIn2S4, ZnIn2S4 / In2O3 / FeIn2S4, ZnIn2S4 / In2O3 / CoIn2S4, ZnIn2S4 / In2O3 / In2S3, ZnIn2S4 / In2O3 / CuInS2, ZnIn2S4 / MnIn2S4 / FeIn2S4, ZnIn2S4 / MnIn2S4 / CoIn2S4, ZnIn2S4 / MnIn2S4 / In2S3, ZnIn2S4 / MnIn2S4 / CuInS2, ZnIn2S4 / FeIn2S4 / CoIn2S4, ZnIn2S4 / FeIn2S4 / In2S3, ZnIn2S4 / FeIn2S4 / CuInS2, ZnIn2S4 / CoIn2S4 / In2S3, ZnIn2S4 / CoIn2S4 / CuInS2, ZnIn2S4 / In2S3 / CuInS2, In2O3 / MnIn2S4 / FeIn2S4, In2O3 / MnIn2S4 / CoIn2S4, In2O3 / MnIn2S4 / In2S3, In2O3 / MnIn2S4 / CuInS2, In2O3 / FeIn2S4 / CoIn2S4, In2O3 / FeIn2S4 / In2S3, In2O3 / FeIn2S4 / CuInS2, MnIn2S4 / FeIn2S4 / CoIn2S4, MnIn2S4 / FeIn2S4 / In2S3, MnIn2S4 / FeIn2S4 / CuInS2, MnIn2S4 / CoIn2S4 / In2S3, MnIn2S4 / CoIn2S4 / CuInS2, MnIn2S4 / In2S3 / CuInS2, FeIn2S4 / CoIn2S4 / In2S3, FeIn2S4 / CoIn2S4 / CuInS2, FeIn2S4 / In2S3 / CuInS2, CoIn2S4 / In2S3 / CuInS 24 .

[0038] The lower confinement layer 101, the lower waveguide layer 102, the active layer 103, the upper waveguide layer 104, the electron blocking layer 105, and the upper confinement layer 106 include any one or any multiple combinations of GaN, AlGaN, InGaN, AlInGaN, AlN, InN, AlInN, SiC, Ga2O3, BN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, AlInAs, AlInP, AlGaP, and InGaP.

[0039] The substrate 100 includes any one of sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, sapphire / SiO2 composite substrate, sapphire / AlN composite substrate, sapphire / SiNx, sapphire / SiO2 / SiNx composite substrate, magnesium aluminate spinel MgAl2O4, MgO, ZnO, ZrB2, LiAlO2, and LiGaO2 composite substrate.

[0040] Example 4

[0041] Please refer to Figure 1 , this embodiment provides a technical solution: a semiconductor laser element provided with a Frenkel defect layer. A semiconductor laser element provided with a Frenkel defect layer includes, from bottom to top, a substrate 100, a lower confinement layer 101, a lower waveguide layer 102, an active layer 103, an upper waveguide layer 104, an electron blocking layer 105, and an upper confinement layer 106. A Frenkel defect layer 107 is provided above the upper confinement layer 106.

[0042] The Frenkel defect layer 107 is above the upper confinement layer 106, efficiently desorbs hydrogen atoms, forms H2 to be discharged from the surface, improves the ionization rate of the p-type doping element in the upper confinement layer and reduces the acceptor activation energy of the doping element, and improves the hole concentration in the upper confinement layer.

[0043] Any combination of the Frankel defect layer 107 includes the following four-element combinations of heterojunctions, superlattices, quantum wells, core-shell structures, and quantum dot structures: ZnIn2S4 / In2O3 / MnIn2S4 / FeIn2S4, ZnIn2S4 / In2O3 / MnIn2S4 / CoIn2S4, ZnIn2S4 / In2O3 / MnIn2S4 / In2S3, ZnIn2S4 / In2O3 / MnIn2S4 / CuInS2, ZnIn2S4 / MnIn2S4 / FeIn2S4 / CoIn2S4, ZnIn2S4 / MnIn2S4 / FeIn2S4 / In2S3, ZnIn2S4 / MnIn2S4 / FeIn2S4 / CuInS2, ZnIn2S4 / FeIn2S4 / CoIn2S4 / In2S3, ZnIn2S4 / FeIn2S4 / CoIn2S4 / CuInS2, ZnIn2S4 / CoIn2S4 / In2S3 / CuInS2, In2O3 / MnIn2S4 / FeIn2S4 / CoIn2S4, In2O3 / MnIn2S4 / FeIn2S4 / In2S3, In2O3 / MnIn2S4 / FeIn2S4 / CuInS2, In2O3 / FeIn2S4 / In2S3 / CuInS2, MnIn2S4 / FeIn2S4 / CoIn2S4 / In2S3, MnIn2S4 / FeIn2S4 / CoIn2S4 / CuInS2.

[0044] The lower confinement layer 101, the lower waveguide layer 102, the active layer 103, the upper waveguide layer 104, the electron blocking layer 105, and the upper confinement layer 106 include any one or any multi-element combination of GaN, AlGaN, InGaN, AlInGaN, AlN, InN, AlInN, SiC, Ga2O3, BN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, AlInAs, AlInP, AlGaP, InGaP.

[0045] The substrate 100 includes any one of sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, sapphire / SiO2 composite substrate, sapphire / AlN composite substrate, sapphire / SiNx, sapphire / SiO2 / SiNx composite substrate, magnesium aluminate spinel MgAl2O4, MgO, ZnO, ZrB2, LiAlO2, and LiGaO2 composite substrate.

[0046] Example 5

[0047] Please refer to Figure 1, this embodiment provides a technical solution: a semiconductor laser device with a Frenkel defect layer. The semiconductor laser device with a Frenkel defect layer includes, from bottom to top, a substrate 100, a lower confinement layer 101, a lower waveguide layer 102, an active layer 103, an upper waveguide layer 104, an electron blocking layer 105, and an upper confinement layer 106. Above the upper confinement layer 106, there is a Frenkel defect layer 107.

[0048] The Frenkel defect layer 107 is above the upper confinement layer 106, which efficiently desorbs hydrogen atoms to form H2 and discharge it from the surface, improving the ionization rate of the p-type doping element in the upper confinement layer and reducing the acceptor activation energy of the doping element, thereby increasing the hole concentration in the upper confinement layer.

[0049] Any combination of the Frenkel defect layer 107 includes the following heterojunctions, superlattices, quantum wells, core-shell structures, and quantum dot structures of five-element, six-element, and seven-element combinations: ZnIn2S4 / In2O3 / MnIn2S4 / FeIn2S4 / CoIn2S4, ZnIn2S4 / In2O3 / MnIn2S4 / FeIn2S4 / In2S3, ZnIn2S4 / In2O3 / MnIn2S4 / FeIn2S4 / CuInS2, ZnIn2S4 / MnIn2S4 / FeIn2S4 / CoIn2S4 / In2S3, ZnIn2S4 / MnIn2S4 / FeIn2S4 / CoIn2S4 / CuInS2, ZnIn2S4 / FeIn2S4 / CoIn2S4 / In2S3 / CuInS2, In2O3 / MnIn2S4 / FeIn2S4 / CoIn2S4 / In2S3, In2O3 / MnIn2S4 / FeIn2S4 / CoIn2S4 / CuInS2, In2O3 / FeIn2S4 / CoIn2S4 / In2S3 / CuInS2, MnIn2S4 / FeIn2S4 / CoIn2S4 / In2S3 / CuInS2, ZnIn2S4 / In2O3 / MnIn2S4 / FeIn2S4 / CoIn2S4 / In2S3, ZnIn2S4 / In2O3 / MnIn2S4 / FeIn2S4 / CoIn2S4 / CuInS2, In2O3 / MnIn2S4 / FeIn2S4 / CoIn2S4 / In2S3 / CuInS2, ZnIn2S4 / In2O3 / MnIn2S4 / FeIn2S4 / CoIn2S4 / In2S3 / CuInS4.

[0050] The lower confinement layer 101, lower waveguide layer 102, active layer 103, upper waveguide layer 104, electron blocking layer 105, and upper confinement layer 106 include any one or any multiple combinations of GaN, AlGaN, InGaN, AlInGaN, AlN, InN, AlInN, SiC, Ga2O3, BN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, AlInAs, AlInP, AlGaP, and InGaP.

[0051] The substrate 100 includes any one of sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, sapphire / SiO2 composite substrate, sapphire / AlN composite substrate, sapphire / SiNx, sapphire / SiO2 / SiNx composite substrate, magnesium aluminate spinel MgAl2O4, MgO, ZnO, ZrB2, LiAlO2, and LiGaO2 composite substrate.

[0052] Compared with the prior art, the Frenkel defect layer is above the upper confinement layer. The Frenkel defect layer above the upper confinement layer induces the generation of chemical bonding interfaces and second-phase coherent interfaces, adjusts the interface energy band bending, overpotential, and interface phonon scattering, generates strong interface coupling effects and interface charge transfer, efficiently desorbs hydrogen atoms, forms H2 to discharge from the surface, improves the ionization rate of the p-type doping element in the upper confinement layer and reduces the acceptor activation energy of the doping element, increases the hole concentration in the upper confinement layer, improves the efficiency and transport efficiency of hole injection into the active layer, and improves the peak gain and slope efficiency of the laser element; at the same time, reduces the internal optical loss generated by the un-ionized Mg acceptor impurities and improves the modal gain of the laser element.

[0053] The above embodiments are only used to illustrate the present invention and do not limit the technical solutions described in the present invention. Although this specification has described the present invention in detail with reference to the above respective embodiments, the present invention is not limited to the above specific embodiments. Therefore, any modification or equivalent replacement to the present invention; and all technical solutions and their improvements that do not depart from the spirit and scope of the invention are covered by the scope of the claims of the present invention.

Claims

1. A semiconductor laser device provided with a Frenkel defect layer, comprising, from bottom to top in sequence, a substrate (100), a lower confinement layer (101), a lower waveguide layer (102), an active layer (103), an upper waveguide layer (104), an electron blocking layer (105), and an upper confinement layer (106), characterized in that: Above the upper limiting layer (106), there is a Frenkel defect layer (107), and the Frenkel defect layer (107) is a combination of any two or more of ZnIn2S4, In2O3, MnIn2S4, FeIn2S4, CoIn2S4, In2S3, and CuInS2.

2. The semiconductor laser device provided with a Frenkel defect layer according to claim 1, characterized in that Any combination of the Frenkel defect layer (107) includes the following heterojunctions, superlattices, quantum wells, core-shell structures, and quantum dot structures of binary combinations: ZnIn2S4 / In2O3, ZnIn2S4 / MnIn2S4, ZnIn2S4 / FeIn2S4, ZnIn2S4 / CoIn2S4, ZnIn2S4 / In2S3, ZnIn2S4 / CuInS2, In2O3 / MnIn2S4, In2O3 / FeIn2S4, In2O3 / CoIn2S4, In2O3 / In2S3, In2O3 / CuInS2, MnIn2S4 / FeIn2S4, MnIn2S4 / CoIn2S4, MnIn2S4 / In2S3, MnIn2S4 / CuInS2, FeIn2S4 / CoIn2S4, FeIn2S4 / In2S3, FeIn2S4 / CuInS2, CoIn2S4 / In2S3, CoIn2S4 / CuInS2, In2S3 / CuInS2.

3. The semiconductor laser device provided with a Frenkel defect layer according to claim 1, characterized in that Any combination of the Frankel defect layer (107) includes the following ternary combinations of heterojunctions, superlattices, quantum wells, core-shell structures, and quantum dot structures: ZnIn2S4 / In2O3 / MnIn2S4, ZnIn2S4 / In2O3 / FeIn2S4, ZnIn2S4 / In2O3 / CoIn2S4, ZnIn2S4 / In2O3 / In2S3, ZnIn2S4 / In2O3 / CuInS2, ZnIn2S4 / MnIn2S4 / FeIn2S4, ZnIn2S4 / MnIn2S4 / CoIn2S4, ZnIn2S4 / MnIn2S4 / In2S3, ZnIn2S4 / MnIn2S4 / CuInS2, ZnIn2S4 / FeIn2S4 / CoIn2S4, ZnIn2S4 / FeIn2S4 / In2S3, ZnIn2S4 / FeIn2S4 / CuInS2, ZnIn2S4 / CoIn2S4 / In2S3, ZnIn2S4 / CoIn2S4 / CuInS2, ZnIn2S4 / In2S3 / CuInS2, In2O3 / MnIn2S4 / FeIn2S4, In2O3 / MnIn2S4 / CoIn2S4, In2O3 / MnIn2S4 / In2S3, In2O3 / MnIn2S4 / CuInS2, In2O3 / FeIn2S4 / CoIn2S4, In2O3 / FeIn2S4 / In2S3, In2O3 / FeIn2S4 / CuInS2, MnIn2S4 / FeIn2S4 / CoIn2S4, MnIn2S4 / FeIn2S4 / In2S3, MnIn2S4 / FeIn2S4 / CuInS2, MnIn2S4 / CoIn2S4 / In2S3, MnIn2S4 / CoIn2S4 / CuInS2, MnIn2S4 / In2S3 / CuInS2, FeIn2S4 / CoIn2S4 / In2S3, FeIn2S4 / CoIn2S4 / CuInS2, FeIn2S4 / In2S3 / CuInS2, CoIn2S4 / In2S3 / CuInS2。 4. The semiconductor laser device provided with a Frenkel defect layer according to claim 1, characterized in that Any combination of the Frankel defect layers (107) includes the following heterojunctions, superlattices, quantum wells, core-shell structures, and quantum dot structures of a four-element combination: ZnIn2S4 / In2O3 / MnIn2S4 / FeIn2S4, ZnIn2S4 / In2O3 / MnIn2S4 / CoIn2S4, ZnIn2S4 / In2O3 / MnIn2S4 / In2S3, ZnIn2S4 / In2O3 / MnIn2S4 / CuInS2, ZnIn2S4 / MnIn2S4 / FeIn2S4 / CoIn2S4, ZnIn2S4 / MnIn2S4 / FeIn2S4 / In2S3, ZnIn2S4 / MnIn2S4 / FeIn2S4 / CuInS2, ZnIn2S4 / FeIn2S4 / CoIn2S4 / In2S3, ZnIn2S4 / FeIn2S4 / CoIn2S4 / CuInS2, ZnIn2S4 / CoIn2S4 / In2S3 / CuInS2, In2O3 / MnIn2S4 / FeIn2S4 / CoIn2S4, In2O3 / MnIn2S4 / FeIn2S4 / In2S3, In2O3 / MnIn2S4 / FeIn2S4 / CuInS2, In2O3 / FeIn2S4 / In2S3 / CuInS2, MnIn2S4 / FeIn2S4 / CoIn2S4 / In2S3, MnIn2S4 / FeIn2S4 / CoIn2S4 / CuInS2.

5. The semiconductor laser device provided with a Frenkel defect layer according to claim 1, characterized in that Any combination of the Frenkel defect layer (107) includes the following heterojunctions, superlattices, quantum wells, core-shell structures, and quantum dot structures of five-element, six-element, and seven-element combinations: ZnIn2S4 / In2O3 / MnIn2S4 / FeIn2S4 / CoIn2S4, ZnIn2S4 / In2O3 / MnIn2S4 / FeIn2S4 / In2S3, ZnIn2S4 / In2O3 / MnIn2S4 / FeIn2S4 / CuInS2, ZnIn2S4 / MnIn2S4 / FeIn2S4 / CoIn2S4 / In2S3, ZnIn2S4 / MnIn2S4 / FeIn2S4 / CoIn2S4 / CuInS2, ZnIn2S4 / FeIn2S4 / CoIn2S4 / In2S3 / CuInS2, In2O3 / MnIn2S4 / FeIn2S4 / CoIn2S4 / In2S3, In2O3 / MnIn2S4 / FeIn2S4 / CoIn2S4 / CuInS2, In2O3 / FeIn2S4 / CoIn2S4 / In2S3 / CuInS2, MnIn2S4 / FeIn2S4 / CoIn2S4 / In2S3 / CuInS2, ZnIn2S4 / In2O3 / MnIn2S4 / FeIn2S4 / CoIn2S4 / In2S3, ZnIn2S4 / In2O3 / MnIn2S4 / FeIn2S4 / CoIn2S4 / CuInS2, In2O3 / MnIn2S4 / FeIn2S4 / CoIn2S4 / In2S3 / CuInS2, ZnIn2S4 / In2O3 / MnIn2S4 / FeIn2S4 / CoIn2S4 / In2S3 / CuInS4.

6. The semiconductor laser device provided with a Frenkel defect layer according to claim 1, characterized in that The Frenkel defect layer (107) is above the upper confinement layer (106), inducing the formation of chemical bonding interfaces and second-phase coherent interfaces, regulating the interfacial energy band bending, overpotential, and interfacial phonon scattering, generating strong interfacial coupling effects and interfacial charge transfer, efficiently desorbing hydrogen atoms, forming H2 to discharge from the surface, enhancing the ionization rate of the p-type doping elements in the upper confinement layer and reducing the acceptor activation energy of the doping elements, increasing the hole concentration in the upper confinement layer, enhancing the efficiency and transport efficiency of hole injection into the active layer, and enhancing the peak gain and slope efficiency of the laser device; at the same time, reducing the internal optical loss generated by the un-ionized Mg acceptor impurities and enhancing the modal gain of the laser device.

7. The semiconductor laser device provided with a Frenkel defect layer according to claim 1, characterized in that The p-type doping elements of the upper confinement layer (106) include elements such as Mg, Li, Zn, Ca, Na, and Ka.

8. The semiconductor laser device provided with a Frenkel defect layer according to claim 1, characterized in that The lower confinement layer (101), lower waveguide layer (102), active layer (103), upper waveguide layer (104), electron blocking layer (105), and upper confinement layer (106) include any one or any multiple combinations of GaN, AlGaN, InGaN, AlInGaN, AlN, InN, AlInN, SiC, Ga2O3, BN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, AlInAs, AlInP, AlGaP, and InGaP.

9. The semiconductor laser device provided with a Frenkel defect layer according to claim 1, characterized in that The substrate (100) includes any one of sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, sapphire / SiO2 composite substrate, sapphire / AlN composite substrate, sapphire / SiNx, sapphire / SiO2 / SiNx composite substrate, magnesium aluminate spinel MgAl2O4, MgO, ZnO, ZrB2, LiAlO2, and LiGaO2 composite substrate.

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