Wafer double-sided synchronous cleaning equipment and cleaning method

Abstract

The present invention provides a wafer double-sided synchronous cleaning device and cleaning method, which relates to the field of wafer cleaning technology, including: controlling the wafer carrying platform to drive the wafer to rotate, then sequentially controlling the nozzles of each front cleaning mechanism to swing along a preset path, spray cleaning the front side of the wafer during the swinging process, and controlling each back cleaning pipeline to synchronously spray clean the back side of the wafer via a central pipeline, and keeping the cleaning reagents sprayed by the front cleaning mechanism and the back cleaning pipeline the same, as well as the speed and flow rate of the cleaning reagents during the synchronous spray cleaning. The beneficial effect is that the front cleaning mechanism is combined with the back cleaning pipeline, and the cleaning reagents are synchronously output to clean the front and back sides of the wafer simultaneously during the wafer rotation process, effectively reducing the gap in etching quality and cleanliness caused by the traditional single-wafer front and back segmented cleaning.

Description

Technical Field

[0001] The present invention relates to the technical field of wafer cleaning, and in particular to a wafer double-sided synchronous cleaning device and a cleaning method. Background Art

[0002] Wafer cleaning is the process of removing contaminants generated by the wafer's contact with various organic matter, particles and metals during the continuous processing, shaping and polishing process. It is an important process step in the wafer manufacturing process.

[0003] When double-sided cleaning of the wafer is required, the existing cleaning method is usually segmented cleaning, such as cleaning the front side first and then the back side. Due to the uneven force on the front and back sides during cleaning, the cleaning process may cause the liquid on the front and back sides to contact the wafer or unexpected air backflow, thereby causing the adhesion of dust and particles, resulting in a large difference in etching uniformity between the front and back sides. In addition, if the back side is not cleaned when the front side is cleaned, the front side will be impacted by the spraying liquid and the shear force of the wafer rotation will cause the wafer to move and deflect, resulting in inconsistent uniformity of the front surface of the wafer from the inner circle to each area of ​​the outer circle. Summary of the Invention

[0004] In view of the problems existing in the prior art, the present invention provides a wafer double-sided synchronous cleaning device, comprising:

[0005] A workbench, wherein a wafer carrying platform is provided on the workbench for carrying a wafer, wherein the wafer is suspended above a wafer carrying surface of the wafer carrying platform and rotates driven by the wafer carrying platform;

[0006] A plurality of front cleaning mechanisms are provided on the workbench and located on one side of the wafer carrying platform;

[0007] A central pipeline is provided in the wafer supporting platform, one end of the central pipeline extends in a direction away from the wafer supporting surface and is connected to multiple external backside cleaning pipelines, and the other end of the central pipeline extends toward the wafer supporting surface. A blocking structure ring is provided on the wafer supporting surface corresponding to the central pipeline, and the height of the blocking structure ring gradually decreases from the center to the edge of the wafer supporting surface;

[0008] A cleaning control module is respectively connected to the wafer carrying platform, each of the front cleaning mechanisms and each of the back cleaning pipelines, and is used to control the wafer carrying platform to drive the wafer to rotate, and then control the nozzle of each of the front cleaning mechanisms to swing along a preset path in turn, spray cleaning the front side of the wafer during the swinging process, and control each of the back cleaning pipelines to synchronously spray clean the back side of the wafer through the central pipeline, and during the synchronous spray cleaning, keep the cleaning reagents sprayed by the front cleaning mechanism and the back cleaning pipeline, as well as the speed and flow rate of the cleaning reagents the same.

[0009] Preferably, each of the front cleaning mechanisms comprises:

[0010] a fixing member, one end of which is fixed to the workbench;

[0011] The swinging member is perpendicular to the fixing member, one end of the swinging member is rotatably connected to the other end of the fixing member, and the other end of the swinging member is connected to the nozzle.

[0012] Preferably, each of the front cleaning mechanisms includes:

[0013] The first cleaning mechanism is configured to spray diluted hydrofluoric acid as the cleaning agent;

[0014] The second cleaning mechanism is configured to spray functional ultrapure water as the cleaning reagent;

[0015] The third cleaning mechanism is configured to spray an isopropyl alcohol solvent or nitrogen gas as the cleaning agent;

[0016] Each of the back cleaning pipelines includes a first cleaning pipeline corresponding to spraying the diluted hydrofluoric acid, a second cleaning pipeline corresponding to spraying the functional ultrapure water, a third cleaning pipeline corresponding to spraying the isopropyl alcohol solvent, and a fourth cleaning pipeline corresponding to spraying the nitrogen gas.

[0017] Preferably, the cleaning control module includes:

[0018] A first control unit is used to control the wafer carrying platform to drive the wafer to rotate;

[0019] a second control unit, configured to control the first cleaning mechanism to swing along the preset path and spray the diluted hydrofluoric acid toward the front surface of the wafer during the swinging process, and to synchronously control the first cleaning pipeline to spray the diluted hydrofluoric acid toward the back surface of the wafer via the central pipeline;

[0020] a third control unit, configured to control the second cleaning mechanism to swing along the preset path after the diluted hydrofluoric acid spraying is completed, and to spray the functional ultrapure water toward the front side of the wafer during the swinging process, and to synchronously control the second cleaning pipeline to spray the functional ultrapure water toward the back side of the wafer via the central pipeline;

[0021] a fourth control unit, configured to control the third cleaning mechanism to swing along the preset path after the functional ultrapure water spraying is completed, and to spray the isopropyl alcohol solvent onto the front surface of the wafer during the swinging process, and to synchronously control the third cleaning pipeline to spray the isopropyl alcohol solvent onto the back surface of the wafer via the central pipeline;

[0022] The fifth control unit is used to control the third cleaning mechanism to swing along the preset path after the propanol solvent spraying is completed, and to spray the nitrogen toward the front side of the wafer during the swinging process, and to synchronously control the fourth cleaning pipeline to spray the nitrogen toward the back side of the wafer via the central pipeline.

[0023] Preferably, the preset path is a swing arc formed along an edge position of one side of the wafer to a center point of the wafer, and along the center point to an edge position of the other side of the wafer.

[0024] Preferably, the workbench is further provided with a plurality of liquid receiving cups corresponding to the front cleaning mechanisms;

[0025] The cleaning control module is further configured to control the front cleaning mechanism to reset after the corresponding front cleaning mechanism completes spray cleaning, so that the nozzle of the front cleaning structure is located directly above the corresponding liquid receiving cup.

[0026] The present invention also provides a wafer double-sided synchronous cleaning method, which is applied to the above-mentioned wafer double-sided synchronous cleaning equipment, and the wafer double-sided synchronous cleaning equipment method includes:

[0027] Step S1, controlling the wafer carrying platform to drive the wafer to rotate;

[0028] Step S2, sequentially controlling the nozzles of the front cleaning mechanisms to swing along a preset path, spray cleaning the front side of the wafer during the swinging process, and controlling the back side cleaning pipelines to synchronously spray clean the back side of the wafer through the central pipeline, and during the synchronous spray cleaning, keeping the cleaning reagents sprayed by the front cleaning mechanisms and the back side cleaning pipelines, and the speed and flow rate of the cleaning reagents the same.

[0029] Preferably, in step S2, each of the front cleaning mechanisms includes:

[0030] The first cleaning mechanism is configured to spray diluted hydrofluoric acid as the cleaning agent;

[0031] The second cleaning mechanism is configured to spray functional ultrapure water as the cleaning reagent;

[0032] The third cleaning mechanism is configured to spray an isopropyl alcohol solvent or nitrogen gas as the cleaning agent;

[0033] Each of the back cleaning pipelines includes a first cleaning pipeline corresponding to spraying the diluted hydrofluoric acid, a second cleaning pipeline corresponding to spraying the functional ultrapure water, a third cleaning pipeline corresponding to spraying the isopropyl alcohol solvent, and a fourth cleaning pipeline corresponding to spraying the nitrogen gas.

[0034] Preferably, the step S2 includes:

[0035] Step S21, controlling the first cleaning mechanism to swing along the preset path and spraying the diluted hydrofluoric acid toward the front surface of the wafer during the swinging process, and synchronously controlling the first cleaning pipeline to spray the diluted hydrofluoric acid toward the back surface of the wafer via the central pipeline;

[0036] Step S22, after the diluted hydrofluoric acid spraying is completed, controlling the second cleaning mechanism to swing along the preset path, and spraying the functional ultrapure water toward the front side of the wafer during the swinging process, and synchronously controlling the second cleaning pipeline to spray the functional ultrapure water toward the back side of the wafer via the central pipeline;

[0037] Step S23, after the functional ultrapure water spraying is completed, controlling the third cleaning mechanism to swing along the preset path, and spraying the isopropyl alcohol solvent onto the front surface of the wafer during the swinging process, and synchronously controlling the third cleaning pipeline to spray the isopropyl alcohol solvent onto the back surface of the wafer via the central pipeline;

[0038] Step S24, after the propanol solvent spraying is completed, the third cleaning mechanism is controlled to swing along the preset path, and the nitrogen is sprayed toward the front of the wafer during the swinging process, and the fourth cleaning pipeline is synchronously controlled to spray the nitrogen toward the back of the wafer through the central pipeline.

[0039] Preferably, the preset path is a swing arc formed along an edge position of one side of the wafer to a center point of the wafer, and along the center point to an edge position of the other side of the wafer.

[0040] The above technical solution has the following advantages or beneficial effects:

[0041] 1) The front cleaning mechanism is combined with the back cleaning pipeline. During the wafer rotation process, the cleaning reagent is output synchronously to clean the front and back sides of the wafer at the same time, effectively reducing the gap in etching quality and cleanliness caused by the traditional single-wafer front and back cleaning;

[0042] 2) The simultaneous cleaning of the front and back sides of the wafer not only maintains the uniformity of the front and back sides of the wafer, but also uses the stress of the liquid spray provided by the back side cleaning to make the front and back sides bear the same hard force balance, thus avoiding the deflection phenomenon;

[0043] 3) By setting up a blocking structure ring, on the one hand, a downstream structural shape is generated to avoid the generation of blind spots to the greatest extent; on the other hand, a basic condition for stable airflow that effectively diffuses outward is formed. In combination with the corresponding wafer rotation speed, when rotating at a speed of not less than 800 rpm, the nitrogen output from the central pipeline can be effectively rotated out, and the particles that have refluxed and settled on the back surface of the wafer and the wafer supporting surface can be swept out again. BRIEF DESCRIPTION OF THE DRAWINGS

[0044] Figure 1 This is a structural diagram of a wafer double-sided synchronous cleaning device in a preferred embodiment of the present invention;

[0045] Figure 2 This is a structural diagram of a cleaning control module in a preferred embodiment of the present invention;

[0046] Figure 3 This is a schematic diagram comparing the cleaning results of the present technical solution and the prior art in a preferred embodiment of the present invention;

[0047] Figure 4 A schematic diagram of a preset path in a preferred embodiment of the present invention;

[0048] Figure 5 A schematic diagram of a preset path in a preferred embodiment of the present invention;

[0049] Figure 6 1 is a flow chart of a method for simultaneous double-sided cleaning of a wafer in a preferred embodiment of the present invention;

[0050] Figure 7 This is a schematic diagram of a sub-flow chart of step S2 in a preferred embodiment of the present invention. DETAILED DESCRIPTION

[0051] The present invention is described in detail below with reference to the accompanying drawings and specific embodiments. The present invention is not limited to this embodiment, and other embodiments may also fall within the scope of the present invention as long as they conform to the gist of the present invention.

[0052] In a preferred embodiment of the present invention, based on the above problems existing in the prior art, a wafer double-sided synchronous cleaning device is provided. Figure 1 and Figure 2 As shown, including:

[0053] A workbench 1 is provided with a wafer carrying platform 2 for carrying a wafer 3. The wafer 3 is suspended above a wafer carrying surface 21 of the wafer carrying platform 2 and rotates driven by the wafer carrying platform 2.

[0054] A plurality of front cleaning mechanisms 4 are provided on the workbench 1 and located on one side of the wafer carrying platform 2;

[0055] A central pipe 22 is provided through the wafer supporting platform 2. One end of the central pipe 22 extends away from the wafer supporting surface 21 and is connected to multiple external backside cleaning pipes 5. The other end of the central pipe 22 extends toward the wafer supporting surface 21. A blocking structure ring 23 is provided on the wafer supporting surface 21 corresponding to the central pipe 22. The height of the blocking structure ring 23 gradually decreases from the center to the edge of the wafer supporting surface 21.

[0056] The cleaning control module 6 is respectively connected to the wafer carrying platform 2, each front cleaning mechanism 4 and each back cleaning pipeline 5, and is used to control the wafer carrying platform 2 to drive the wafer 3 to rotate, and then control the nozzle of each front cleaning mechanism 4 to swing along a preset path in turn, spray cleaning the front side of the wafer 3 during the swinging process, and control each back cleaning pipeline 5 to synchronously spray clean the back side of the wafer 3 through the central pipeline 22, and during the synchronous spray cleaning, keep the cleaning reagents sprayed by the front cleaning mechanism 4 and the back cleaning pipeline 5, and the speed and flow rate of the cleaning reagents are the same.

[0057] Specifically, in this embodiment, a plurality of pneumatic components can be provided on the wafer support platform 2. By spraying gas toward the wafer 3 so that the wafer 3 is suspended above the wafer support platform 2 under the action of the gas pressure, non-contact support is achieved, ensuring that particles and contaminants below the wafer 3 will not accumulate during the rotation process due to the contact support method and rebound on the surface of the wafer 3. The above-mentioned use of pneumatic components as a non-contact implementation method is only an example and is not a limitation thereto. It is not the main invention of this technical solution, and its specific structure and implementation method will not be repeated here.

[0058] By disposing a central conduit 22 at the center of the wafer support platform 2 and connecting it to the external backside cleaning conduits 5, each backside cleaning conduit 5 can spray cleaning reagent onto the backside of the wafer 3 via the central conduit 22. During spraying, the wafer rotates, allowing the cleaning reagent to swirl from the center of the wafer support surface 21 to the outermost position of the wafer. To prevent secondary contamination such as particle backflow and adhesion to airflow-depleted areas due to the air chamber phenomenon during the spraying process, in this embodiment, a blocking structure ring 23 is provided in the corresponding area of ​​the central conduit 22. The blocking structure ring 23 is also provided through the central conduit 22 to avoid gas turbulence, adapt to the airflow diffusion path in the central area of ​​the wafer backside, and utilize an ultra-low gentle slope to separate particles and prevent particle adhesion.

[0059] Further preferably, the blocking structure ring 23 is preferably fixed with sunken microporous fixing pins to avoid particles adhering to the holes due to the excessive size of the structure holes.

[0060] When cleaning both sides of the wafer, the front cleaning mechanism 4 and the back cleaning pipeline 5 are controlled to spray synchronously, and the cleaning reagents sprayed, the speed and flow rate of the cleaning reagents are the same, such as Figure 3 As shown, the left side is cleaned using this technical solution, and the right side is cleaned using the existing technology. It can be seen that this technical solution can make the front and back of the wafer evenly stressed, making the cleaning uniform and smooth. The existing single-sided spraying will cause the wafer to shake due to uneven stress on the top and bottom, resulting in excessive etching or insufficient etching of amorphous areas. It can be seen that this technical solution uses synchronous cleaning reagent output for cleaning, which effectively reduces the gap in etching quality and cleanliness caused by the traditional single-wafer front and back cleaning without synchronous front and back cleaning.

[0061] In a preferred embodiment of the present invention, each front cleaning mechanism 4 includes:

[0062] A fixing member 7, one end of which is fixed on the workbench 1;

[0063] The swinging member 8 is perpendicular to the fixing member 7 , one end of the swinging member 8 is rotatably connected to the other end of the fixing member 7 , and the other end of the swinging member 8 is connected to the nozzle 9 .

[0064] Specifically, in this embodiment, the bottom of the above-mentioned fixing part can be connected to a lifting mechanism. Before it is necessary to control the front cleaning mechanism 4 to swing along a preset path, it is preferred to control the lifting mechanism to lift, and after the spraying is completed, control the lifting mechanism to restore to avoid mutual interference among the front cleaning mechanisms 4.

[0065] In a preferred embodiment of the present invention, each front cleaning mechanism 4 includes:

[0066] The first cleaning mechanism 41 is configured to spray diluted hydrofluoric acid as a cleaning agent;

[0067] The second cleaning mechanism 42 is configured to spray functional ultrapure water as a cleaning agent;

[0068] The third cleaning mechanism 43 is configured to spray an isopropyl alcohol solvent or nitrogen gas as a cleaning agent;

[0069] Each back cleaning pipeline 5 includes a first cleaning pipeline 51 corresponding to spraying diluted hydrofluoric acid, a second cleaning pipeline 52 corresponding to spraying functional ultrapure water, a third cleaning pipeline 53 corresponding to spraying isopropyl alcohol solvent, and a fourth cleaning pipeline 54 corresponding to spraying nitrogen.

[0070] Specifically, in this embodiment, Figure 4 As shown, when the nozzle 9 of the front cleaning mechanism 4 swings, the connection point of the swinging member 8 and the fixed member 7 is used as the rotation center of the front cleaning mechanism 4, and the length of the swinging member 8 is used as the rotation axis for swinging, and the preset path formed is as shown in FIG. Figure 4 and Figure 5 As shown, a swing arc is formed along the edge position of one side of the wafer to the center point of the wafer, and along the center point to the edge position of the other side of the wafer.

[0071] Among them, the side close to the liquid cup 10 is regarded as the proximal end, and the boundary positions of the preset paths corresponding to the first cleaning mechanism 41, the second cleaning mechanism 42 and the third cleaning mechanism 43 are respectively as follows: Figure 4 The first boundary position, the second boundary position and the third boundary position are shown. Taking the side close to the rotation center as the far end, the boundary positions of the preset paths corresponding to the first cleaning mechanism 41, the second cleaning mechanism 42 and the third cleaning mechanism 43 are as follows: Figure 4 The fourth boundary position, the fifth boundary position, and the sixth boundary position are shown. It can be seen that the first boundary position, the center position, and the fourth boundary position form the preset path of the first cleaning structure 41, the second boundary position, the center position, and the fifth boundary position form the preset path of the second cleaning structure 42, and the third boundary position, the center position, and the sixth boundary position form the preset path of the third cleaning structure 43.

[0072] Preferably, taking the first cleaning mechanism 41 as an example, it starts spraying liquid when it starts to swing from the first boundary position, stops spraying liquid when it reaches the third boundary position through the center position, then starts spraying liquid when it returns from the third boundary position, stops spraying liquid when it reaches the first boundary position through the center position, and so on.

[0073] Preferably, each front cleaning mechanism swing member 8 has a different length.

[0074] In a preferred embodiment of the present invention, the cleaning control module 6 includes:

[0075] The first control unit 61 is used to control the wafer carrying platform 2 to drive the wafer 3 to rotate;

[0076] The second control unit 62 is used to control the first cleaning mechanism 41 to swing along a preset path and spray diluted hydrofluoric acid onto the front surface of the wafer 3 during the swinging process, and to synchronously control the first cleaning pipeline 51 to spray diluted hydrofluoric acid onto the back surface of the wafer 3 via the central pipeline 22;

[0077] A third control unit 63 is configured to control the second cleaning mechanism 42 to swing along a preset path after the diluted hydrofluoric acid spraying is completed, and to spray functional ultrapure water toward the front surface of the wafer 3 during the swinging process, and to synchronously control the second cleaning pipeline 52 to spray functional ultrapure water toward the back surface of the wafer 3 via the central pipeline 22;

[0078] The fourth control unit 64 is used to control the third cleaning mechanism 43 to swing along a preset path after the functional ultrapure water spraying is completed, and to spray isopropyl alcohol solvent onto the front surface of the wafer 3 during the swinging process, and to synchronously control the third cleaning pipeline 53 to spray isopropyl alcohol solvent onto the back surface of the wafer 3 via the central pipeline 22;

[0079] The fifth control unit 65 is used to control the third cleaning mechanism 43 to swing along a preset path after the propanol solvent spraying is completed, and to spray nitrogen toward the front side of the wafer 3 during the swinging process, and to synchronously control the fourth cleaning pipeline 54 to spray nitrogen toward the back side of the wafer 3 via the central pipeline 22.

[0080] As a preferred embodiment, the above-mentioned wafer carrying platform 2 can be connected to a corresponding rotation drive mechanism, and the first control unit 61 can drive the wafer carrying platform 2 to rotate the wafer 3 by controlling the rotation drive mechanism. The structure of the rotation drive mechanism is not limited, as long as it can drive the wafer carrying platform 2 to rotate axially.

[0081] As a preferred embodiment, a rotating shaft can be provided at the other end of the fixing part 7 of each of the above-mentioned front cleaning structures 4, and the rotating shaft is connected to the corresponding rotation drive. The second control unit 62, the third control unit 63, the fourth control unit 64 and the fifth control unit 65 can control the rotation drive of the corresponding front cleaning structure 4 to realize the control of the corresponding front cleaning mechanism 4 to swing along a preset path.

[0082] As a preferred embodiment, at least one spray control valve can be correspondingly set on each of the above-mentioned back cleaning pipelines 5 or on the central pipeline 22 corresponding to each of the back cleaning pipelines 5. The second control unit 62, the third control unit 63, the fourth control unit 64 and the fifth control unit 65 can realize the opening and stopping of the back spray by controlling the opening and closing of the spray control valve of the corresponding back cleaning pipeline 5.

[0083] It is preferred to control the wafer carrying platform 2 to drive the wafer 3 to rotate at a rotation speed of 500-1500RPM, and a more preferred rotation speed is in the range of 500-800RPM, which varies according to different cleaning reagent usage requirements.

[0084] The concentration of the diluted hydrofluoric acid is HF:H20=1:5-1:100, preferably 1:20. The functional ultrapure water is prepared by mixing functional gases into ultrapure water and pressurizing the mixture. The functional gases include but are not limited to nitrogen, carbon dioxide, hydrogen and ozone.

[0085] After the diluted hydrofluoric acid spray is completed, it is necessary to rinse with functional ultrapure water to ensure a clean wafer surface. By using functional ultrapure water, the surface of the wafer can be kept clean before removing the silicon oxide. During the rotational cleaning of the functional water, the silicon layer after removal is well and evenly removed. After the functional ultrapure water cleaning is completed, the moisture on the surface of the wafer needs to be drained with IPA drying (isopropyl alcohol solvent). At the same time, the moisture on both sides is initially removed. The rotational force and the exclusive nature of nitrogen remove the moisture, maintaining a good post-etching quality surface on both sides. Under the protection of IPA drying (isopropyl alcohol solvent), a better gas film can be formed to block the formation of amorphous silicon oxide.

[0086] In a preferred embodiment of the present invention, the workbench 1 is further provided with a plurality of liquid receiving cups 10 corresponding to each front cleaning mechanism 4;

[0087] The cleaning control module 6 is also used to control the front cleaning mechanism 4 to reset after the corresponding front cleaning mechanism 4 completes spray cleaning, so that the nozzle 9 of the front cleaning structure 4 is located directly above the corresponding liquid receiving cup 10, so that the residual cleaning reagent in the nozzle 9 can be discharged into the liquid receiving cup 10, keeping the workbench 1 clean.

[0088] The present invention also provides a wafer double-sided synchronous cleaning method, which is applied to the above-mentioned wafer double-sided synchronous cleaning equipment, such as Figure 6 As shown, the wafer double-sided synchronous cleaning equipment method includes:

[0089] Step S1, controlling the wafer carrying platform to drive the wafer to rotate;

[0090] Step S2, control the nozzles of each front cleaning mechanism to swing along a preset path in turn, spray clean the front side of the wafer during the swinging process, and control each back side cleaning pipeline to synchronously spray clean the back side of the wafer through the central pipeline, and keep the cleaning reagents sprayed by the front cleaning mechanism and the back side cleaning pipeline the same as the cleaning reagent speed and flow rate during the synchronous spray cleaning.

[0091] In a preferred embodiment of the present invention, in step S2, each front cleaning mechanism includes:

[0092] The first cleaning mechanism, the corresponding spray cleaning agent is diluted hydrofluoric acid;

[0093] The second cleaning mechanism uses functional ultrapure water as the corresponding cleaning agent for spraying;

[0094] The third cleaning mechanism is configured to spray isopropyl alcohol or nitrogen as the cleaning agent;

[0095] Each back cleaning pipeline includes a first cleaning pipeline corresponding to spraying diluted hydrofluoric acid, a second cleaning pipeline corresponding to spraying functional ultrapure water, a third cleaning pipeline corresponding to spraying isopropyl alcohol solvent, and a fourth cleaning pipeline corresponding to spraying nitrogen.

[0096] In a preferred embodiment of the present invention, Figure 7 As shown, step S2 includes:

[0097] Step S21, controlling the first cleaning mechanism to swing along a preset path, spraying diluted hydrofluoric acid onto the front surface of the wafer during the swinging process, and synchronously controlling the first cleaning pipeline to spray diluted hydrofluoric acid onto the back surface of the wafer via the central pipeline;

[0098] Step S22, after the diluted hydrofluoric acid spraying is completed, controlling the second cleaning mechanism to swing along a preset path, and spraying functional ultrapure water toward the front side of the wafer during the swinging process, and synchronously controlling the second cleaning pipeline to spray functional ultrapure water toward the back side of the wafer via the central pipeline;

[0099] Step S23, after the functional ultrapure water spraying is completed, the third cleaning mechanism is controlled to swing along a preset path, and during the swinging process, the isopropyl alcohol solvent is sprayed onto the front surface of the wafer, and the third cleaning pipeline is synchronously controlled to spray the isopropyl alcohol solvent onto the back surface of the wafer via the central pipeline;

[0100] Step S24, after the propanol solvent spraying is completed, the third cleaning mechanism is controlled to swing along a preset path, and nitrogen is sprayed toward the front side of the wafer during the swinging process, and the fourth cleaning pipeline is synchronously controlled to spray nitrogen toward the back side of the wafer through the central pipeline.

[0101] In a preferred embodiment of the present invention, the preset path is a swing arc formed along an edge position on one side of the wafer to the center point of the wafer, and along the center point to the edge position on the other side of the wafer.

[0102] The above description is only a preferred embodiment of the present invention and does not limit the implementation mode and protection scope of the present invention. For those skilled in the art, it should be aware that all solutions obtained by equivalent substitutions and obvious changes made using the content of this specification and illustrations should be included in the protection scope of the present invention.

Claims

1. A wafer double-sided synchronous cleaning device, characterized in that: include: A workbench, wherein a wafer carrying platform is provided on the workbench for carrying a wafer, wherein the wafer is suspended above a wafer carrying surface of the wafer carrying platform and rotates driven by the wafer carrying platform; A plurality of front cleaning mechanisms are provided on the workbench and located on one side of the wafer carrying platform; A central pipeline is provided in the wafer supporting platform, one end of the central pipeline extends in a direction away from the wafer supporting surface and is connected to multiple external backside cleaning pipelines, and the other end of the central pipeline extends toward the wafer supporting surface. A blocking structure ring is provided on the wafer supporting surface corresponding to the central pipeline, and the height of the blocking structure ring gradually decreases from the center to the edge of the wafer supporting surface; a cleaning control module, connected to the wafer carrying platform, each of the front cleaning mechanisms, and each of the back cleaning pipelines, respectively, for controlling the wafer carrying platform to drive the wafer to rotate, and then sequentially controlling the nozzles of each of the front cleaning mechanisms to swing along a preset path, spray cleaning the front side of the wafer during the swinging process, and controlling each of the back cleaning pipelines to synchronously spray clean the back side of the wafer via the central pipeline, and during the synchronous spray cleaning, maintaining the same cleaning reagent, spraying speed, and flow rate of the cleaning reagent sprayed by the front cleaning mechanism and the back cleaning pipeline; Each of the front cleaning mechanisms comprises: a fixing member, one end of which is fixed to the workbench; an oscillating member, perpendicular to the fixed member, one end of the oscillating member being rotatably connected to the other end of the fixed member, and the other end of the oscillating member being connected to the nozzle; The first cleaning mechanism is configured to spray diluted hydrofluoric acid as the cleaning agent; The second cleaning mechanism is configured to spray functional ultrapure water as the cleaning reagent; The third cleaning mechanism is configured to spray an isopropyl alcohol solvent or nitrogen gas as the cleaning agent; Then each of the back cleaning pipelines includes a first cleaning pipeline corresponding to spraying the diluted hydrofluoric acid, a second cleaning pipeline corresponding to spraying the functional ultrapure water, a third cleaning pipeline corresponding to spraying the isopropyl alcohol solvent, and a fourth cleaning pipeline corresponding to spraying the nitrogen gas; The preset path is a swing arc formed along an edge position on one side of the wafer to a center point of the wafer, and along the center point to an edge position on the other side of the wafer.

2. The wafer double-sided synchronous cleaning equipment according to claim 1, characterized in that: The cleaning control module includes: A first control unit is used to control the wafer carrying platform to drive the wafer to rotate; a second control unit, configured to control the first cleaning mechanism to swing along the preset path and spray the diluted hydrofluoric acid toward the front surface of the wafer during the swinging process, and to synchronously control the first cleaning pipeline to spray the diluted hydrofluoric acid toward the back surface of the wafer via the central pipeline; a third control unit, configured to control the second cleaning mechanism to swing along the preset path after the diluted hydrofluoric acid spraying is completed, and to spray the functional ultrapure water toward the front side of the wafer during the swinging process, and to synchronously control the second cleaning pipeline to spray the functional ultrapure water toward the back side of the wafer via the central pipeline; a fourth control unit, configured to control the third cleaning mechanism to swing along the preset path after the functional ultrapure water spraying is completed, and to spray the isopropyl alcohol solvent onto the front surface of the wafer during the swinging process, and to synchronously control the third cleaning pipeline to spray the isopropyl alcohol solvent onto the back surface of the wafer via the central pipeline; The fifth control unit is used to control the third cleaning mechanism to swing along the preset path after the isopropyl alcohol solvent spraying is completed, and to spray the nitrogen toward the front side of the wafer during the swinging process, and to synchronously control the fourth cleaning pipeline to spray the nitrogen toward the back side of the wafer via the central pipeline.

3. The wafer double-sided synchronous cleaning equipment according to claim 1, characterized in that: The workbench is also provided with a plurality of liquid receiving cups corresponding to the front cleaning mechanisms; The cleaning control module is further configured to control the front cleaning mechanism to reset after the corresponding front cleaning mechanism completes spray cleaning, so that the nozzle of the front cleaning mechanism is located directly above the corresponding liquid receiving cup.

4. A wafer double-sided synchronous cleaning method, characterized in that: Applied to the wafer double-sided simultaneous cleaning equipment according to any one of claims 1 to 3, the method comprising: Step S1, controlling the wafer carrying platform to drive the wafer to rotate; Step S2, sequentially controlling the nozzles of the front cleaning mechanisms to swing along a preset path, spray cleaning the front side of the wafer during the swinging process, and controlling the back side cleaning pipelines to synchronously spray clean the back side of the wafer via the central pipeline, and during the synchronous spray cleaning, keeping the cleaning reagents sprayed by the front cleaning mechanisms and the back side cleaning pipelines, and the spraying speed and flow rate of the cleaning reagents the same.

5. The wafer double-sided simultaneous cleaning method according to claim 4, characterized in that: In step S2, each of the front cleaning mechanisms includes: The first cleaning mechanism is configured to spray diluted hydrofluoric acid as the cleaning agent; The second cleaning mechanism is configured to spray functional ultrapure water as the cleaning reagent; The third cleaning mechanism is configured to spray an isopropyl alcohol solvent or nitrogen gas as the cleaning agent; Each of the back cleaning pipelines includes a first cleaning pipeline corresponding to spraying the diluted hydrofluoric acid, a second cleaning pipeline corresponding to spraying the functional ultrapure water, a third cleaning pipeline corresponding to spraying the isopropyl alcohol solvent, and a fourth cleaning pipeline corresponding to spraying the nitrogen gas.

6. The wafer double-sided simultaneous cleaning method according to claim 5, characterized in that: The step S2 comprises: Step S21, controlling the first cleaning mechanism to swing along the preset path and spraying the diluted hydrofluoric acid toward the front surface of the wafer during the swinging process, and synchronously controlling the first cleaning pipeline to spray the diluted hydrofluoric acid toward the back surface of the wafer via the central pipeline; Step S22: After the diluted hydrofluoric acid spraying is completed, controlling the second cleaning mechanism to swing along the preset path, spraying the functional ultrapure water toward the front side of the wafer during the swinging process, and synchronously controlling the second cleaning pipeline to spray the functional ultrapure water toward the back side of the wafer via the central pipeline; Step S23, after the functional ultrapure water spraying is completed, controlling the third cleaning mechanism to swing along the preset path, and spraying the isopropyl alcohol solvent onto the front surface of the wafer during the swinging process, and synchronously controlling the third cleaning pipeline to spray the isopropyl alcohol solvent onto the back surface of the wafer via the central pipeline; Step S24, after the isopropyl alcohol solvent spraying is completed, the third cleaning mechanism is controlled to swing along the preset path, and the nitrogen is sprayed toward the front side of the wafer during the swinging process, and the fourth cleaning pipeline is synchronously controlled to spray the nitrogen toward the back side of the wafer via the central pipeline.

7. The wafer double-sided simultaneous cleaning method according to claim 4, characterized in that: The preset path is a swing arc formed along an edge position on one side of the wafer to a center point of the wafer, and along the center point to an edge position on the other side of the wafer.

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