A semiconductor laser device provided with a van der Waals nonlinear layer

Abstract

The present invention provides a semiconductor laser device provided with a van der Waals non-linear layer, which relates to the technical field of semiconductor optoelectronic devices. From bottom to top, it sequentially includes a substrate, a lower confinement layer, a lower waveguide layer, an active layer, an upper waveguide layer, an electron blocking layer, and an upper confinement layer. A van der Waals non-linear layer is provided between the lower waveguide layer and the lower confinement layer and between the lower waveguide layer and the active layer. The van der Waals non-linear layer transforms a non-topological transformation path into a topological transformation path, suppresses the In composition fluctuation and strain of the active layer, enhances the peak gain, improves the thermal stability and thermal degradation, enhances the interface quality, reduces the non-radiative recombination center, and enhances the lasing power and slope efficiency of the laser device; the van der Waals non-linear layer forms an asymmetric barrier at the top and bottom of the active layer, enhances the tunneling probability of carriers, enhances the transport and injection uniformity of holes in the active layer, reduces the optical field dissipation, suppresses the leakage of the optical field to the substrate, and enhances the far-field image FFP quality.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor optoelectronic devices, and more particularly, to a semiconductor laser element provided with a van der Waals nonlinear layer. Background Art

[0002] Lasers are widely used in the fields of laser display, laser TV, laser projector, communication, medical treatment, weapons, guidance, ranging, spectral analysis, cutting, precision welding, high-density optical storage, etc. There are many types of lasers, and the classification methods are also diverse. The main types include solid-state, gas, liquid, semiconductor, and dye lasers; compared with other types of lasers, all-solid-state semiconductor lasers have the advantages of small volume, high efficiency, light weight, good stability, long life, simple and compact structure, and miniaturization. There are significant differences between lasers and nitride semiconductor light-emitting diodes. 1) Laser is generated by stimulated emission of carriers, with a relatively small spectral full width at half maximum, very high brightness, and the output power of a single laser can be in the watt level, while nitride semiconductor light-emitting diodes are spontaneous emission, and the output power of a single light-emitting diode is in the milliwatt level; 2) The operating current density of lasers reaches kA / cm², which is more than two orders of magnitude higher than that of nitride light-emitting diodes, resulting in stronger electron leakage, more severe Auger recombination, stronger polarization effects, and more serious electron-hole mismatch, leading to a more serious efficiency droop effect; 3) The light-emitting diode undergoes spontaneous transition radiation, and without external action, it is incoherent light that transitions from a high energy level to a low energy level, while the laser is stimulated transition radiation, and the energy of the induced photon should be equal to the energy difference between the electron transitions, generating photons that are identical and coherent with the induced photons; 4) The principles are different: the light-emitting diode generates radiative recombination and emits light when electrons and holes transition to the quantum well or p-n junction under the action of an external voltage, while the laser can only lasing when the lasing conditions are met. It must satisfy the condition of carrier population inversion in the active region. The stimulated emission light oscillates back and forth in the resonant cavity, and the propagation in the gain medium amplifies the light. When the threshold condition is met, the gain is greater than the loss, and finally, laser light is output.The nitride semiconductor laser has the following problems: 1. When the In composition of the quantum well increases, In composition fluctuations and strain will occur, the gain spectrum of the laser will broaden, and the peak gain will decrease; when the In composition of the quantum well increases, the thermal stability becomes worse, and the growth of the high-temperature p-type semiconductor and the confinement layer will cause thermal degradation of the active layer, reducing the quality of the active layer and the interface quality; the high defect density inside the active layer, the large miscibility gap between InN and GaN, the phase separation and segregation of InN, thermal degradation, and the unsatisfactory crystal quality result in unsatisfactory quantum well quality and interface quality, increasing non-radiative recombination centers; 2. The Mg acceptor in the p-type semiconductor has a large activation energy and low ionization efficiency, the hole concentration is much lower than the electron concentration, the hole mobility is much smaller than the electron mobility, and problems such as the quantum well polarization electric field raising the hole injection barrier and the hole overflowing from the active layer lead to uneven hole injection and low efficiency, resulting in serious asymmetry and mismatch between electrons and holes in the quantum well, electron leakage and carrier delocalization, making it more difficult for holes to transport in the quantum well, uneven carrier injection, uneven gain, and at the same time, the gain spectrum of the laser broadens, the peak gain decreases, resulting in an increase in the threshold current of the laser and a decrease in the slope efficiency; 3. Increasing the thickness of the lower confinement layer can reduce the refractive index of the confinement layer, but increasing the thickness of the lower confinement layer will also lead to limited composition regulation range, and problems such as cracking, bending, and quality degradation are likely to occur; at the same time, there is light field dissipation, and the light field mode leaking to the substrate to form a standing wave will lead to low substrate mode suppression efficiency and poor far-field image FFP quality. Summary of the Invention

[0003] The purpose of the present invention is to provide a semiconductor laser element provided with a van der Waals nonlinear layer, which solves the problems existing in the prior art.

[0004] A semiconductor laser element provided with a van der Waals nonlinear layer includes a substrate, a lower confinement layer, a lower waveguide layer, an active layer, an upper waveguide layer, an electron blocking layer, and an upper confinement layer in sequence from bottom to top. A van der Waals nonlinear layer is provided between the lower waveguide layer and the lower confinement layer and between the lower waveguide layer and the active layer.

[0005] As a preferred technical solution of the present invention, the van der Waals nonlinear layer (107) transforms the non-topological transformation path into a topological transformation path, suppresses the In composition fluctuations and strain of the active layer, improves the peak gain, improves the thermal stability and thermal degradation, improves the interface quality, reduces the non-radiative recombination center, and improves the lasing power and slope efficiency of the laser element; the van der Waals nonlinear layer forms an asymmetric barrier at the top and bottom of the active layer, improves the tunneling probability of carriers, improves the transport and injection uniformity of holes in the active layer, enhances the confinement factor and reduces the threshold, and at the same time, generates non-linear polarization-induced harmonic effects, resonance shifts, and stimulated Raman effects, reduces light field dissipation, suppresses the light field leakage to the substrate, and improves the far-field image FFP quality.

[0006] As a preferred technical solution of the present invention, the van der Waals non-linear layer is 3R-MoS 2 , LiNbO 3 , LuFe 2 O 4 , Cr 2 Ce 2 Te 6 , Fe 3 GeTe 2 , InSnO 2 N, or any combination thereof.

[0007] As a preferred technical solution of the present invention, any combination of the van der Waals non-linear layers includes the following binary combination heterojunctions, superlattices, quantum wells, core-shell structures, quantum dot structures: 3R-MoS 2 / LiNbO 3 , 3R-MoS 2 / LuFe 2 O 4 , 3R-MoS 2 / Cr 2 Ce 2 Te 6 , 3R-MoS 2 / Fe 3 GeTe 2 , 3R-MoS 2 / InSnO 2 N, LiNbO 3 / LuFe 2 O 4 , LiNbO 3 / Cr 2 Ce 2 Te 6 , LiNbO 3 / Fe 3 GeTe 2 , LiNbO 3 / InSnO 2 N, LuFe 2 O 4 / Cr 2 Ce 2 Te 6 , LuFe 2 O 4 / Fe 3 GeTe 2 , LuFe 2 O 4 / InSnO 2 , Cr 2 Ce 2 Te 6 / Fe3 GeTe 2 , Cr 2 Ce 2 Te 6 / InSnO 2 N, Fe 3 GeTe 2 / InSnO 2 N。

[0008] As a preferred technical solution of the present invention, any combination of the van der Waals nonlinear layers includes the following ternary combinations of heterojunctions, superlattices, quantum wells, core-shell structures, and quantum dot structures:

[0009] 3R-MoS 2 / LiNbO 3 / LuFe 2 O 4 ,

[0010] 3R-MoS 2 / LiNbO 3 / Cr 2 Ce 2 Te 6 ,

[0011] 3R-MoS 2 / LiNbO 3 / Fe 3 GeTe 2 ,

[0012] 3R-MoS 2 / LiNbO 3 / InSnO 2 N,

[0013] 3R-MoS 2 / LuFe 2 O 4 / Cr 2 Ce 2 Te 6 ,

[0014] 3R-MoS 2 / LuFe 2 O 4 / Fe 3 GeTe 2 ,

[0015] 3R-MoS 2 / LuFe 2 O 4 / InSnO 2 N,

[0016] 3R-MoS2 / Cr 2 Ce 2 Te 6 / Fe 3 GeTe 2 ,

[0017] 3R-MoS 2 / Cr 2 Ce 2 Te 6 / InSnO 2 N,

[0018] 3R-MoS 2 / Fe 3 GeTe 2 / InSnO 2 N,

[0019] LiNbO 3 / LuFe 2 O 4 / Cr 2 Ce 2 Te 6 ,

[0020] LiNbO 3 / LuFe 2 O 4 / Fe 3 GeTe 2 ,

[0021] LiNbO 3 / LuFe 2 O 4 / InSnO 2 N,

[0022] LiNbO 3 / Cr 2 Ce 2 Te 6 / Fe 3 GeTe 2 ,

[0023] LiNbO 3 / Cr 2 Ce 2 Te 6 / InSnO 2 N,

[0024] LiNbO 3 / Fe 3 GeTe 2 / InSnO 2 N,

[0025] Cr2 Ce 2 Te 6 / Fe 3 GeTe 2 / InSnO 2 N。

[0026] As a preferred technical solution of the present invention, any combination of the van der Waals nonlinear layers includes the following heterojunctions, superlattices, quantum wells, core-shell structures, and quantum dot structures of a quaternary combination:

[0027] 3R-MoS 2 / LiNbO 3 / LuFe 2 O 4 / Cr 2 Ce 2 Te 6 ,

[0028] 3R-MoS 2 / LiNbO 3 / LuFe 2 O 4 / Fe 3 GeTe 2 ,

[0029] 3R-MoS 2 / LiNbO 3 / LuFe 2 O 4 / InSnO 2 N,

[0030] 3R-MoS 2 / LuFe 2 O 4 / Cr 2 Ce 2 Te 6 / Fe 3 GeTe 2 ,

[0031] 3R-MoS 2 / LuFe 2 O 4 / Cr 2 Ce 2 Te 6 / InSnO 2 N,

[0032] 3R-MoS 2 / Cr 2 Ce 2 Te 6 / Fe 3 GeTe 2 / InSnO 2 N,

[0033] LiNbO 3 / LuFe 2 O 4 / Cr 2 Ce 2 Te 6 / Fe 3 GeTe 2 ,

[0034] LiNbO 3 / LuFe 2 O 4 / Cr 2 Ce 2 Te 6 / InSnO 2 N,

[0035] LiNbO 3 / Cr 2 Ce 2 Te 6 / Fe 3 GeTe 2 / InSnO 2 N,

[0036] LuFe 2 O 4 / Cr 2 Ce 2 Te 6 / Fe 3 GeTe 2 / InSnO 2 N。

[0037] As a preferred technical solution of the present invention, any combination of the van der Waals nonlinear layers includes the following heterojunctions, superlattices, quantum wells, core-shell structures, and quantum dot structures of five-element and six-element combinations:

[0038] 3R-MoS 2 / LiNbO 3 / LuFe 2 O 4 / Cr 2 Ce 2 Te 6 / Fe 3 GeTe 2 ,

[0039] 3R-MoS 2 / LiNbO 3 / LuFe 2 O 4 / Cr 2 Ce2 Te 6 / InSnO 2 N,

[0040] 3R-MoS 2 / LiNbO 3 / LuFe 2 O 4 / Fe 3 GeTe 2 / InSnO 2 N,

[0041] 3R-MoS 2 / LiNbO 3 / Cr 2 Ce 2 Te 6 / Fe 3 GeTe 2 / InSnO 2 N,

[0042] 3R-MoS 2 / LuFe 2 O 4 / Cr 2 Ce 2 Te 6 / Fe 3 GeTe 2 / InSnO 2 N,

[0043] LiNbO 3 / LuFe 2 O 4 / Cr 2 Ce 2 Te 6 / Fe 3 GeTe 2 / InSnO 2 N, 3R-MoS 2 / LiNbO 3 / LuFe 2 O 4 / Cr 2 Ce 2 Te 6 / Fe 3 GeTe 2 / InSnO 2 N。

[0044] As a preferred technical solution of the present invention, the thickness of the van der Waals non-linear layer is 5-500 nm.

[0045] As a preferred technical solution of the present invention, the lower confinement layer, the lower waveguide layer, the active layer, the upper waveguide layer, the electron blocking layer, and the upper confinement layer include any one or any multi-element combination of GaN, AlGaN, InGaN, AlInGaN, AlN, InN, AlInN, SiC, Ga 2 O 3 , BN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, AlInAs, AlInP, AlGaP, InGaP.

[0046] As a preferred technical solution of the present invention, the substrate includes any one of sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, sapphire / SiO2 composite substrate, sapphire / AlN composite substrate, sapphire / SiNx, sapphire / SiO2 / SiNx composite substrate, magnesium aluminate spinel MgAl 2 O 4 , MgO, ZnO, ZrB 2 , LiAlO 2 and LiGaO 2 composite substrate.

[0047] Compared with the prior art, the beneficial effects of the present invention are:

[0048] In the solution of the present invention:

[0049] A van der Waals nonlinear layer is provided between the active layer and the upper waveguide layer and between the active layer and the lower waveguide layer; the van der Waals nonlinear layer is 3R-MoS 2 , LiNbO 3 , LuFe 2 O 4 , Cr 2 Ce 2 Te 6 , Fe 3 GeTe 2 , InSnO 2 N or any combination thereof; the van der Waals nonlinear layer (107) converts the non-topological transformation path into a topological transformation path, suppresses the In composition fluctuation and strain of the active layer, improves the peak gain, improves the thermal stability and thermal degradation, improves the interface quality, reduces the non-radiative recombination center, and improves the lasing power and slope efficiency of the laser element; the van der Waals nonlinear layer forms an asymmetric barrier at the top and bottom of the active layer, improves the tunneling probability of carriers, improves the transport and injection uniformity of holes in the active layer, enhances the confinement factor and reduces the threshold. At the same time, it generates nonlinear polarization-induced harmonic effects, resonance shifts and stimulated Raman effects, reduces the optical field dissipation, suppresses the optical field leakage to the substrate, and improves the far-field image FFP quality. Brief Description of the Drawings

[0050] Figure 1 This is a schematic structural diagram of a semiconductor laser device provided with a van der Waals nonlinear layer according to the present invention.

[0051] Reference numerals in the figure:[[]]END

[0052] 100: Substrate; 101: Lower confinement layer; 102: Lower waveguide layer; 103: Active layer; 104: Upper waveguide layer, 105: Electron blocking layer, 106: Upper confinement layer, 107: Van der Waals nonlinear layer. Detailed Description of the Embodiments

[0053] To make the objectives, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are some, but not all, of the embodiments of the present invention.

[0054] Therefore, the following detailed description of the embodiments of the present invention is not intended to limit the scope of the claimed invention, but merely represents some embodiments of the present invention. All other embodiments obtained by those of ordinary skill in the art based on the embodiments of the present invention without creative efforts fall within the scope of protection of the present invention.

[0055] It should be noted that, without conflict, the embodiments in the present invention and the features and technical solutions in the embodiments may be combined with each other.

[0056] Embodiment 1

[0057] Please refer to Figure 1 , this embodiment provides a technical solution: a semiconductor laser device provided with a van der Waals nonlinear layer, a semiconductor laser device provided with a van der Waals nonlinear layer, which sequentially includes a substrate 100, a lower confinement layer 101, a lower waveguide layer 102, an active layer 103, an upper waveguide layer 104, an electron blocking layer 105, and an upper confinement layer 106 from bottom to top. A van der Waals nonlinear layer 107 is provided between the lower waveguide layer 102 and the lower confinement layer 101 and between the lower waveguide layer 102 and the active layer 103..

[0058] The Van der Waals nonlinear layer 107 transforms the non-topological transformation path into a topological transformation path, suppresses the In composition fluctuation and strain of the active layer, enhances the peak gain, improves the thermal stability and thermal degradation, enhances the interface quality, reduces the non-radiative recombination center, and enhances the lasing power and slope efficiency of the laser element; the Van der Waals nonlinear layer forms an asymmetric barrier at the top and bottom of the active layer, enhances the tunneling probability of carriers, improves the transport and injection uniformity of holes in the active layer, enhances the confinement factor and reduces the threshold. At the same time, it generates harmonic effects, resonance shifts, and stimulated Raman effects induced by nonlinear polarization, reduces the optical field dissipation, suppresses the leakage of the optical field to the substrate, and improves the far-field image FFP quality.

[0059] The Van der Waals nonlinear layer 107 is 3R-MoS 2 、LiNbO 3 、LuFe 2 O 4 、Cr 2 Ce 2 Te 6 、Fe 3 GeTe 2 、InSnO 2 any one of N.

[0060] The thickness of the Van der Waals nonlinear layer 107 is 5 - 500 nm.

[0061] The lower confinement layer 101, the lower waveguide layer 102, the active layer 103, the upper waveguide layer 104, the electron blocking layer 105, and the upper confinement layer 106 include any one or any multiple combinations of GaN, AlGaN, InGaN, AlInGaN, AlN, InN, AlInN, SiC, Ga 2 O 3 、BN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, AlInAs, AlInP, AlGaP, InGaP.

[0062] The substrate 100 includes any one of sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, sapphire / SiO2 composite substrate, sapphire / AlN composite substrate, sapphire / SiNx, sapphire / SiO2 / SiNx composite substrate, magnesium aluminate spinel MgAl 2 O 4 、MgO, ZnO, ZrB 2 、LiAlO 2 and LiGaO 2 composite substrate.

[0063] Example 2

[0064] Please refer to Figure 1 , this embodiment provides a technical solution: a semiconductor laser device provided with a van der Waals nonlinear layer. The semiconductor laser device provided with a van der Waals nonlinear layer includes a substrate 100, a lower confinement layer 101, a lower waveguide layer 102, an active layer 103, an upper waveguide layer 104, an electron blocking layer 105, and an upper confinement layer 106 from bottom to top. A van der Waals nonlinear layer 107 is provided between the lower waveguide layer 102 and the lower confinement layer 101 and between the lower waveguide layer 102 and the active layer 103.

[0065] The van der Waals nonlinear layer 107 transforms a non-topological transformation path into a topological transformation path, suppresses the In composition fluctuation and strain of the active layer, improves the peak gain, thermal stability and thermal degradation, improves the interface quality, reduces the non-radiative recombination center, and improves the lasing power and slope efficiency of the laser device; the van der Waals nonlinear layer forms an asymmetric barrier at the top and bottom of the active layer, increases the tunneling probability of carriers, improves the transport and injection uniformity of holes in the active layer, enhances the confinement factor and reduces the threshold. At the same time, it generates harmonic effects, resonance shifts and stimulated Raman effects induced by nonlinear polarization, reduces the optical field dissipation, suppresses the leakage of the optical field to the substrate, and improves the far-field image FFP quality.

[0066] Any combination of the van der Waals nonlinear layer 107 includes the following binary combinations of heterojunctions, superlattices, quantum wells, core-shell structures, and quantum dot structures: 3R-MoS 2 / LiNbO 3 , 3R-MoS 2 / LuFe 2 O 4 , 3R-MoS 2 / Cr 2 Ce 2 Te 6 , 3R-MoS 2 / Fe 3 GeTe 2 , 3R-MoS 2 / InSnO 2 N, LiNbO 3 / LuFe 2 O 4 , LiNbO 3 / Cr 2 Ce 2 Te 6 , LiNbO 3 / Fe 3 GeTe 2 ,LiNbO 3 / InSnO 2 N, LuFe 2O 4 / Cr 2 Ce 2 Te 6 , LuFe 2 O 4 / Fe 3 GeTe 2 , LuFe 2 O 4 / InSnO 2 N, Cr 2 Ce 2 Te 6 / Fe 3 GeTe 2 , Cr 2 Ce 2 Te 6 / InSnO 2 N, Fe 3 GeTe 2 / InSnO 2 N。

[0067] The lower confinement layer 101, the lower waveguide layer 102, the active layer 103, the upper waveguide layer 104, the electron blocking layer 105, and the upper confinement layer 106 include any one or any multiple combinations of GaN, AlGaN, InGaN, AlInGaN, AlN, InN, AlInN, SiC, Ga 2 O 3 , BN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, AlInAs, AlInP, AlGaP, InGaP.

[0068] The substrate 100 includes any one of sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, sapphire / SiO2 composite substrate, sapphire / AlN composite substrate, sapphire / SiNx, sapphire / SiO2 / SiNx composite substrate, magnesium aluminate spinel MgAl 2 O 4 , MgO, ZnO, ZrB 2 , LiAlO 2 and LiGaO 2 composite substrate.

[0069] Example 3

[0070] Please refer to Figure 1, this embodiment provides a technical solution: a semiconductor laser element provided with a van der Waals nonlinear layer. A semiconductor laser element provided with a van der Waals nonlinear layer includes, from bottom to top, a substrate 100, a lower confinement layer 101, a lower waveguide layer 102, an active layer 103, an upper waveguide layer 104, an electron blocking layer 105, and an upper confinement layer 106. A van der Waals nonlinear layer 107 is provided between the lower waveguide layer 102 and the lower confinement layer 101 and between the lower waveguide layer 102 and the active layer 103.

[0071] The van der Waals nonlinear layer 107 transforms a non-topological transformation path into a topological transformation path, suppresses the In composition fluctuation and strain of the active layer, enhances the peak gain, improves the thermal stability and thermal degradation, improves the interface quality, reduces the non-radiative recombination center, enhances the lasing power and slope efficiency of the laser element; the van der Waals nonlinear layer forms an asymmetric barrier at the top and bottom of the active layer, enhances the tunneling probability of carriers, improves the transport and injection uniformity of holes in the active layer, enhances the confinement factor and reduces the threshold. At the same time, it generates nonlinear polarization-induced harmonic effects, resonance shifts, and stimulated Raman effects, reduces the optical field dissipation, suppresses the leakage of the optical field to the substrate, and improves the far-field image FFP quality.

[0072] Any combination of the van der Waals nonlinear layer 107 includes the following ternary combinations of heterojunctions, superlattices, quantum wells, core-shell structures, and quantum dot structures:

[0073] 3R-MoS 2 / LiNbO 3 / LuFe 2 O 4 ,

[0074] 3R-MoS 2 / LiNbO 3 / Cr 2 Ce 2 Te 6 ,

[0075] 3R-MoS 2 / LiNbO 3 / Fe 3 GeTe 2 ,

[0076] 3R-MoS 2 / LiNbO 3 / InSnO 2 N,

[0077] 3R-MoS 2 / LuFe 2 O 4 / Cr 2 Ce 2 Te6 ,

[0078] 3R-MoS 2 / LuFe 2 O 4 / Fe 3 GeTe 2 ,

[0079] 3R-MoS 2 / LuFe 2 O 4 / InSnO 2 N,

[0080] 3R-MoS 2 / Cr 2 Ce 2 Te 6 / Fe 3 GeTe 2 ,

[0081] 3R-MoS 2 / Cr 2 Ce 2 Te 6 / InSnO 2 N,

[0082] 3R-MoS 2 / Fe 3 GeTe 2 / InSnO 2 N,

[0083] LiNbO 3 / LuFe 2 O 4 / Cr 2 Ce 2 Te 6 ,

[0084] LiNbO 3 / LuFe 2 O 4 / Fe 3 GeTe 2 ,

[0085] LiNbO 3 / LuFe 2 O 4 / InSnO 2 N,

[0086] LiNbO 3 / Cr 2 Ce 2 Te 6 / Fe 3 GeTe2 ,

[0087] LiNbO 3 / Cr 2 Ce 2 Te 6 / InSnO 2 N,

[0088] LiNbO 3 / Fe 3 GeTe 2 / InSnO 2 N,

[0089] Cr 2 Ce 2 Te 6 / Fe 3 GeTe 2 / InSnO 2 N。

[0090] The thickness of the van der Waals nonlinear layer 107 is 5 - 500 nm.

[0091] The lower confinement layer 101, the lower waveguide layer 102, the active layer 103, the upper waveguide layer 104, the electron blocking layer 105, and the upper confinement layer 106 include any one or any multiple combinations of GaN, AlGaN, InGaN, AlInGaN, AlN, InN, AlInN, SiC, Ga 2 O 3 , BN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, AlInAs, AlInP, AlGaP, InGaP.

[0092] The substrate 100 includes any one of sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, sapphire / SiO2 composite substrate, sapphire / AlN composite substrate, sapphire / SiNx, sapphire / SiO2 / SiNx composite substrate, magnesium aluminate spinel MgAl 2 O 4 , MgO, ZnO, ZrB 2 、LiAlO 2 and LiGaO 2 composite substrate.

[0093] Example 4

[0094] Please refer to Figure 1, this embodiment provides a technical solution: a semiconductor laser element provided with a van der Waals nonlinear layer. The semiconductor laser element provided with a van der Waals nonlinear layer includes, from bottom to top, a substrate 100, a lower confinement layer 101, a lower waveguide layer 102, an active layer 103, an upper waveguide layer 104, an electron blocking layer 105, and an upper confinement layer 106. A van der Waals nonlinear layer 107 is provided between the lower waveguide layer 102 and the lower confinement layer 101 and between the lower waveguide layer 102 and the active layer 103.

[0095] The van der Waals nonlinear layer 107 converts a non-topological transformation path into a topological transformation path, suppresses the In composition fluctuation and strain of the active layer, improves the peak gain, enhances the thermal stability and thermal degradation, improves the interface quality, reduces the non-radiative recombination center, and increases the lasing power and slope efficiency of the laser element; the van der Waals nonlinear layer forms an asymmetric barrier at the top and bottom of the active layer, increases the tunneling probability of carriers, improves the transport and injection uniformity of holes in the active layer, enhances the confinement factor and reduces the threshold. At the same time, it generates harmonic effects, resonance shifts, and stimulated Raman effects induced by nonlinear polarization, reduces the optical field dissipation, suppresses the leakage of the optical field to the substrate, and improves the far-field image FFP quality.

[0096] Any combination of the van der Waals nonlinear layer 107 includes the following four-element combinations of heterojunctions, superlattices, quantum wells, core-shell structures, and quantum dot structures:

[0097] 3R-MoS 2 / LiNbO 3 / LuFe 2 O 4 / Cr 2 Ce 2 Te 6 ,

[0098] 3R-MoS 2 / LiNbO 3 / LuFe 2 O 4 / Fe 3 GeTe 2 ,

[0099] 3R-MoS 2 / LiNbO 3 / LuFe 2 O 4 / InSnO 2 N,

[0100] 3R-MoS 2 / LuFe 2 O 4 / Cr 2 Ce 2 Te6 / Fe 3 GeTe 2 ,

[0101] 3R-MoS 2 / LuFe 2 O 4 / Cr 2 Ce 2 Te 6 / InSnO 2 N,

[0102] 3R-MoS 2 / Cr 2 Ce 2 Te 6 / Fe 3 GeTe 2 / InSnO 2 N,

[0103] LiNbO 3 / LuFe 2 O 4 / Cr 2 Ce 2 Te 6 / Fe 3 GeTe 2 ,

[0104] LiNbO 3 / LuFe 2 O 4 / Cr 2 Ce 2 Te 6 / InSnO 2 N,

[0105] LiNbO 3 / Cr 2 Ce 2 Te 6 / Fe 3 GeTe 2 / InSnO 2 N,

[0106] LuFe 2 O 4 / Cr 2 Ce 2 Te 6 / Fe 3 GeTe 2 / InSnO 2 N。

[0107] Example 5

[0108] Please refer toFigure 1 , this embodiment provides a technical solution: a semiconductor laser element provided with a van der Waals nonlinear layer. A semiconductor laser element provided with a van der Waals nonlinear layer includes, from bottom to top, a substrate 100, a lower confinement layer 101, a lower waveguide layer 102, an active layer 103, an upper waveguide layer 104, an electron blocking layer 105, and an upper confinement layer 106. A van der Waals nonlinear layer 107 is provided between the lower waveguide layer 102 and the lower confinement layer 101 and between the lower waveguide layer 102 and the active layer 103.

[0109] The van der Waals nonlinear layer 107 transforms a non-topological transformation path into a topological transformation path, suppresses the In composition fluctuation and strain of the active layer, enhances the peak gain, improves the thermal stability and thermal degradation, improves the interface quality, reduces the non-radiative recombination center, and enhances the lasing power and slope efficiency of the laser element; the van der Waals nonlinear layer forms an asymmetric barrier at the top and bottom of the active layer, enhances the tunneling probability of carriers, improves the transport and injection uniformity of holes in the active layer, enhances the confinement factor and reduces the threshold. At the same time, it generates nonlinear polarization-induced harmonic effects, resonance shifts, and stimulated Raman effects, reduces the optical field dissipation, suppresses the leakage of the optical field to the substrate, and improves the far-field image FFP quality.

[0110] Any combination of the van der Waals nonlinear layer 107 includes the following five-element combinations of heterojunctions, superlattices, quantum wells, core-shell structures, and quantum dot structures:

[0111] 3R-MoS 2 / LiNbO 3 / LuFe 2 O 4 / Cr 2 Ce 2 Te 6 / Fe 3 GeTe 2 ,

[0112] 3R-MoS 2 / LiNbO 3 / LuFe 2 O 4 / Cr 2 Ce 2 Te 6 / InSnO 2 N,

[0113] 3R-MoS 2 / LiNbO 3 / LuFe 2 O 4 / Fe 3 GeTe 2 / InSnO 2 N,

[0114] 3R-MoS 2 / LiNbO 3 / Cr 2 Ce 2 Te 6 / Fe 3 GeTe 2 / InSnO 2 N,

[0115] 3R-MoS 2 / LuFe 2 O 4 / Cr 2 Ce 2 Te 6 / Fe 3 GeTe 2 / InSnO 2 N,

[0116] LiNbO 3 / LuFe 2 O 4 / Cr 2 Ce 2 Te 6 / Fe 3 GeTe 2 / InSnO 2 N。

[0117] The thickness of the van der Waals nonlinear layer 107 is 5 - 500 nm.

[0118] The lower confinement layer 101, the lower waveguide layer 102, the active layer 103, the upper waveguide layer 104, the electron blocking layer 105, and the upper confinement layer 106 include any one or any multiple combinations of GaN, AlGaN, InGaN, AlInGaN, AlN, InN, AlInN, SiC, Ga 2 O 3 , BN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, AlInAs, AlInP, AlGaP, InGaP.

[0119] The substrate 100 includes sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, sapphire / SiO2 composite substrate, sapphire / AlN composite substrate, sapphire / SiNx, sapphire / SiO2 / SiNx composite substrate, magnesium aluminate spinel MgAl 2 O 4 , MgO, ZnO, ZrB 2 、LiAlO 2and LiGaO 2 Any one of the composite substrates.

[0120] Example 6

[0121] Please refer to Figure 1 , this embodiment provides a technical solution: a semiconductor laser element provided with a van der Waals nonlinear layer, a semiconductor laser element provided with a van der Waals nonlinear layer, which sequentially includes a substrate 100, a lower confinement layer 101, a lower waveguide layer 102, an active layer 103, an upper waveguide layer 104, an electron blocking layer 105, and an upper confinement layer 106 from bottom to top. A van der Waals nonlinear layer 107 is provided between the active layer 103 and the upper waveguide layer 104 and between the active layer 103 and the lower waveguide layer 102.

[0122] The van der Waals nonlinear layer 107 transforms the non-topological transformation path into a topological transformation path, suppresses the In composition fluctuation and strain of the active layer, improves the peak gain, improves the thermal stability and thermal degradation, improves the interface quality, reduces the non-radiative recombination center, and improves the lasing power and slope efficiency of the laser element; the van der Waals nonlinear layer forms asymmetric barriers at the top and bottom of the active layer, improves the tunneling probability of carriers, improves the transport and injection uniformity of holes in the active layer, enhances the confinement factor and reduces the threshold. At the same time, it generates harmonic effects, resonance shifts, and stimulated Raman effects induced by nonlinear polarization, reduces the optical field dissipation, suppresses the leakage of the optical field to the substrate, and improves the far-field image FFP quality.

[0123] Any combination of the van der Waals nonlinear layer 107 includes the following six-element combinations of heterojunctions, superlattices, quantum wells, core-shell structures, and quantum dot structures:

[0124] 3R-MoS 2 / LiNbO 3 / LuFe 2 O 4 / Cr 2 Ce 2 Te 6 / Fe 3 GeTe 2 / InSnO 2 N.

[0125] The thickness of the van der Waals nonlinear layer 107 is 5-500 nm.

[0126] The lower confinement layer 101, the lower waveguide layer 102, the active layer 103, the upper waveguide layer 104, the electron blocking layer 105, and the upper confinement layer 106 include GaN, AlGaN, InGaN, AlInGaN, AlN, InN, AlInN, SiC, Ga 2 O 3Any one or any multi - element combination of BN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, AlInAs, AlInP, AlGaP, InGaP.

[0127] The substrate 100 includes any one of sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, sapphire / SiO2 composite substrate, sapphire / AlN composite substrate, sapphire / SiNx, sapphire / SiO2 / SiNx composite substrate, magnesium aluminate spinel MgAl 2 O 4 2, MgO, ZnO, ZrB 2 2, LiAlO 2 2 and LiGaO 2 2 composite substrate.

[0128] Compared with the prior art, in the present invention, a van der Waals nonlinear layer is provided between the active layer and the upper waveguide layer and between the active layer and the lower waveguide layer; the van der Waals nonlinear layer is any one or any combination of CdSe:Mn, SnS 2 :Mn, CuSnS 2 :Mn, CoSnS 2 :Mn, RMnO 5 (R is a rare earth element), WS 2 :Mn; the van der Waals nonlinear layer 107 converts the non - topological transformation path into a topological transformation path, suppresses the In - component fluctuation and strain of the active layer, improves the peak gain, improves the thermal stability and thermal degradation, improves the interface quality, reduces the non - radiative recombination center, improves the lasing power and slope efficiency of the laser element; the van der Waals nonlinear layer forms an asymmetric potential barrier at the top and bottom of the active layer, improves the tunneling probability of carriers, improves the transport and injection uniformity of holes in the active layer, enhances the confinement factor and reduces the threshold. At the same time, it generates nonlinear polarization - induced harmonic effects, resonance shifts and stimulated Raman effects, reduces the optical field dissipation, suppresses the leakage of the optical field to the substrate, and improves the far - field image FFP quality.

[0129] The above - mentioned embodiments are only used to illustrate the present invention rather than to limit the technical solutions described in the present invention. Although this specification has described the present invention in detail with reference to the above - mentioned respective embodiments, the present invention is not limited to the above - mentioned specific embodiments. Therefore, any modification or equivalent replacement of the present invention; and all technical solutions and their improvements that do not depart from the spirit and scope of the invention are covered by the scope of the claims of the present invention.

Claims

1. A semiconductor laser device provided with a van der Waals nonlinear layer, which sequentially includes a substrate (100), a lower confinement layer (101), a lower waveguide layer (102), an active layer (103), an upper waveguide layer (104), an electron blocking layer (105), and an upper confinement layer (106) from bottom to top. Characterized in that: A van der Waals nonlinear layer (107) is provided between the lower waveguide layer (102) and the lower confinement layer (101) and between the lower waveguide layer (102) and the active layer (103). The van der Waals nonlinear layer (107) converts a non-topological transformation path into a topological transformation path, suppresses the In composition fluctuation and strain of the active layer, enhances the peak gain, improves the thermal stability and thermal degradation, improves the interface quality, reduces the non-radiative recombination center, and enhances the lasing power and slope efficiency of the laser element. The van der Waals nonlinear layer forms asymmetric barriers at the top and bottom of the active layer, enhances the tunneling probability of carriers, improves the transport and injection uniformity of holes in the active layer, enhances the confinement factor and reduces the threshold. At the same time, it generates harmonic effects, resonance shifts, and stimulated Raman effects induced by nonlinear polarization, reduces the optical field dissipation, suppresses the leakage of the optical field to the substrate, and improves the far-field image FFP quality. The van der Waals nonlinear layer (107) is 3R-MoS 2 , LiNbO 3 , LuFe 2 O 4 , Cr 2 , Ce 2 , Te 6 , Fe 3 , GeTe 2 , InSnO 2 any one or any combination of N.

2. A semiconductor laser device provided with a van der Waals nonlinear layer as claimed in claim 1, Characterized in that, Any combination of the van der Waals nonlinear layer (107) includes the following binary combination heterojunctions, superlattices, quantum wells, core-shell structures, quantum dot structures: 3R-MoS 2 / LiNbO 3 , 3R-MoS 2 / LuFe 2 O 4 , 3R-MoS 2 / Cr 2 Ce 2 Te 6 , 3R-MoS 2 / Fe 3 GeTe 2 , 3R-MoS 2 / InSnO 2 N, LiNbO 3 / LuFe 2 O 4 , LiNbO 3 / Cr 2 Ce 2 Te 6 , LiNbO 3 / Fe 3 GeTe 2 ,LiNbO 3 / InSnO 2 N, LuFe 2 O 4 / Cr 2 Ce 2 Te 6 , LuFe 2 O 4 / Fe 3 GeTe 2 , LuFe 2 O 4 / InSnO 2 N, Cr 2 Ce 2 Te 6 / Fe 3 GeTe 2 , Cr 2 Ce 2 Te 6 / InSnO 2 N, Fe 3 GeTe 2 / InSnO 2 N.

3. A semiconductor laser device provided with a van der Waals nonlinear layer as claimed in claim 1, Characterized in that, Any combination of the van der Waals nonlinear layer (107) includes the following ternary combinations of heterojunctions, superlattices, quantum wells, core-shell structures, and quantum dot structures: 3R-MoS 2 / LiNbO 3 / LuFe 2 O 4 , 3R-MoS 2 / LiNbO 3 / Cr 2 Ce 2 Te 6 , 3R-MoS 2 / LiNbO 3 / Fe 3 GeTe 2 , 3R-MoS 2 / LiNbO 3 / InSnO 2 N, 3R-MoS 2 / LuFe 2 O 4 / Cr 2 Ce 2 Te 6 , 3R-MoS 2 / LuFe 2 O 4 / Fe 3 GeTe 2 , 3R-MoS 2 / LuFe 2 O 4 / InSnO 2 N, 3R-MoS 2 / Cr 2 Ce 2 Te 6 / Fe 3 GeTe 2 , 3R-MoS 2 / Cr 2 Ce 2 Te 6 / InSnO 2 N, 3R-MoS 2 / Fe 3 GeTe 2 / InSnO 2 N, LiNbO 3 / LuFe 2 O 4 / Cr 2 Ce 2 Te 6 , LiNbO 3 / LuFe 2 O 4 / Fe 3 GeTe 2 , LiNbO 3 / LuFe 2 O 4 / InSnO 2 N, LiNbO 3 / Cr 2 Ce 2 Te 6 / Fe 3 GeTe 2 , LiNbO 3 / Cr 2 Ce 2 Te 6 / InSnO 2 N, LiNbO 3 / Fe 3 GeTe 2 / InSnO 2 N, Cr 2 Ce 2 Te 6 / Fe 3 GeTe 2 / InSnO 2 N。 4. A semiconductor laser device provided with a van der Waals nonlinear layer as claimed in claim 1, Characterized in that, Any combination of the van der Waals nonlinear layer (107) includes the following quaternary combinations of heterojunctions, superlattices, quantum wells, core-shell structures, and quantum dot structures: 3R-MoS 2 / LiNbO 3 / LuFe 2 O 4 / Cr 2 Ce 2 Te 6 , 3R-MoS 2 / LiNbO 3 / LuFe 2 O 4 / Fe 3 GeTe 2 , 3R-MoS 2 / LiNbO 3 / LuFe 2 O 4 / InSnO 2 N, 3R-MoS 2 / LuFe 2 O 4 / Cr 2 Ce 2 Te 6 / Fe 3 GeTe 2 , 3R-MoS 2 / LuFe 2 O 4 / Cr 2 Ce 2 Te 6 / InSnO 2 N, 3R-MoS 2 / Cr 2 Ce 2 Te 6 / Fe 3 GeTe 2 / InSnO 2 N, LiNbO 3 / LuFe 2 O 4 / Cr 2 Ce 2 Te 6 / Fe 3 GeTe 2 , LiNbO 3 / LuFe 2 O 4 / Cr 2 Ce 2 Te 6 / InSnO 2 N, LiNbO 3 / Cr 2 Ce 2 Te 6 / Fe 3 GeTe 2 / InSnO 2 N, LuFe 2 O 4 / Cr 2 Ce 2 Te 6 / Fe 3 GeTe 2 / InSnO 2 N。 5. A semiconductor laser device provided with a van der Waals nonlinear layer as claimed in claim 1, Characterized in that, Any combination of the van der Waals nonlinear layer (107) includes the following quinary and senary combinations of heterojunctions, superlattices, quantum wells, core-shell structures, and quantum dot structures: 3R-MoS 2 / LiNbO 3 / LuFe 2 O 4 / Cr 2 Ce 2 Te 6 / Fe 3 GeTe 2 , 3R-MoS 2 / LiNbO 3 / LuFe 2 O 4 / Cr 2 Ce 2 Te 6 / InSnO 2 N, 3R-MoS 2 / LiNbO 3 / LuFe 2 O 4 / Fe 3 GeTe 2 / InSnO 2 N, 3R-MoS 2 / LiNbO 3 / Cr 2 Ce 2 Te 6 / Fe 3 GeTe 2 / InSnO 2 N, 3R-MoS 2 / LuFe 2 O 4 / Cr 2 Ce 2 Te 6 / Fe 3 GeTe 2 / InSnO 2 N, LiNbO 3 / LuFe 2 O 4 / Cr 2 Ce 2 Te 6 / Fe 3 GeTe 2 / InSnO 2 N, 3R-MoS 2 / LiNbO 3 / LuFe 2 O 4 / Cr 2 Ce 2 Te 6 / Fe 3 GeTe 2 / InSnO 2 N。 6. A semiconductor laser device provided with a van der Waals nonlinear layer as claimed in claim 1, Characterized in that, The thickness of the van der Waals nonlinear layer (107) is 5 - 500 nm.

7. A semiconductor laser device provided with a van der Waals nonlinear layer as claimed in claim 1, Characterized in that, The lower confinement layer (101), lower waveguide layer (102), active layer (103), upper waveguide layer (104), electron blocking layer (105), and upper confinement layer (106) include any one or any multiple combinations of GaN, AlGaN, InGaN, AlInGaN, AlN, InN, AlInN, SiC, Ga 2 O 3 , BN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, AlInAs, AlInP, AlGaP, InGaP 8. A semiconductor laser device provided with a van der Waals nonlinear layer as claimed in claim 1, Characterized in that, The substrate (100) includes any one of sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, sapphire / SiO2 composite substrate, sapphire / AlN composite substrate, sapphire / SiNx, sapphire / SiO2 / SiNx composite substrate, magnesium aluminate spinel MgAl 2 O 4 , MgO, ZnO, ZrB 2 , LiAlO 2 and LiGaO 2 composite substrate.

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