Luminescent substrate, preparation method thereof, and luminescent device

Abstract

A light-emitting substrate comprises: a pixel layer, the pixel layer comprises a plurality of sub-pixels; each sub-pixel comprises a light-emitting element, a first light extraction layer arranged on a light-emitting surface side of the light-emitting element, a first material layer arranged on a first surface side of the first light extraction layer, and a second material layer in contact with a second surface of the first material layer, the light-emitting element is configured to emit light of a first color, the first light extraction layer is configured to deflect the light emitted by the light-emitting element into the first material layer at a preset angle, the first material layer and the second material layer are configured to allow the light deflected at the preset angle to propagate in the first material layer and the second material layer; the plurality of sub-pixels comprises at least one first sub-pixel, and at least the second material layer of the first material layer and the second material layer contained in the at least one first sub-pixel comprises a first light conversion material.

Description

Technical Field

[0001] The present disclosure relates to the field of lighting and display technology, and in particular to a light-emitting substrate, a preparation method thereof, and a light-emitting device. Background Art

[0002] Among self-luminous devices, QLED (Quantum Dot Light Emitting Diodes) light-emitting devices have attracted widespread attention due to their advantages such as higher theoretical luminous efficiency, adjustable color, wider color gamut, better color saturation and vividness, and lower energy consumption cost. Summary of the Invention

[0003] On the one hand, a light-emitting substrate is provided, comprising: a pixel layer, the pixel layer comprising a plurality of sub-pixels; each sub-pixel comprising a light-emitting element, a first light extraction layer arranged on a light-emitting surface side of the light-emitting element, a first material layer arranged on a first surface side of the first light extraction layer, and a second material layer in contact with a second surface of the first material layer, the light-emitting element being configured to emit light of a first color, the first light extraction layer being configured to deflect the light emitted by the light-emitting element into the first material layer at a preset angle, the first material layer and the second material layer being configured to allow the light deflected at the preset angle to be transmitted in the first material layer and the second material layer. Propagation wherein the first surface is the surface of the first light extraction layer away from the light emitting element, and the second surface is the surface of the first material layer close to or away from the light emitting element; the multiple sub-pixels include at least one first sub-pixel, and at least the second material layer of the first material layer and the second material layer contained in the at least one first sub-pixel includes a first light conversion material, and the first light conversion material is configured to absorb light propagating in the first material layer and the second material layer contained in the first reference sub-pixel, and convert the absorbed light into light of a second color for emission, and the first reference sub-pixel is the first sub-pixel to which the first light conversion material belongs.

[0004] In some embodiments, when the second surface is the surface of the first material layer close to the light-emitting element, the area of ​​the orthographic projection of the first material layer on the plane where the pixel layer is located is greater than the area of ​​the orthographic projection of the first light extraction layer on the plane where the pixel layer is located, and the portion of the surface of the first material layer facing the light-emitting element that exceeds the area where the first light extraction layer is located forms the second surface; when the second surface is the surface of the first material layer away from the light-emitting element, the area of ​​the orthographic projection of the first material layer on the substrate is greater than or equal to the area of ​​the orthographic projection of the first light extraction layer on the substrate, and the surface of the first material layer away from the light-emitting element forms the second surface.

[0005] In some embodiments, the substrate serves as the first material layer; or, the second surface is the surface of the first material layer close to the light-emitting element, and the substrate is arranged on a side of the first material layer away from the light-emitting element and in contact with the first material layer.

[0006] In some embodiments, the second surface and the third surface reflect the reference light so that the light deflected into the first material layer at a preset angle propagates in the first material layer and the second material layer, wherein the third surface is the surface of the second material layer away from the first material layer, and the reference light is the light deflected into the first material layer at a preset angle and enters the first material layer and the second material layer during propagation.

[0007] In some embodiments, the plurality of sub-pixels further include at least one second sub-pixel, and at least the second material layer of the first material layer and the second material layer included in the at least one second sub-pixel includes a second light-conversion material, and the second light-conversion material is configured to absorb light propagating in the first material layer and the second material layer included in the second reference sub-pixel, and convert the absorbed light into light of a third color for output; or, at least the second material layer of the first material layer and the second material layer included in the at least one second sub-pixel includes first scattering particles, and the first scattering particles are configured to scatter light propagating in the first material layer and the second material layer included in the second reference sub-pixel, and the second reference sub-pixel includes a first scattering particle. The pixel is the second sub-pixel to which the second light conversion material or the first scattering particles belong; the light-emitting substrate includes a plurality of pixel areas, the plurality of sub-pixels form at least one sub-pixel group, the sub-pixel group is located in a pixel area, the sub-pixel group includes a plurality of sub-pixels, and the plurality of sub-pixels included in the sub-pixel group include at least one first sub-pixel and at least one second sub-pixel; in the sub-pixel group, the light-emitting elements included in the plurality of sub-pixels are all first light-emitting diodes, and the light-emitting colors of the light-emitting elements included in the plurality of sub-pixels are the same, the first light-emitting diode includes a first electrode and a second electrode, and a semiconductor layer arranged between the first electrode and the second electrode, and the light-emitting elements included in the plurality of sub-pixels share the same first electrode.

[0008] In some embodiments, the first light emitting diode is a vertical LED, and the first electrode is closer to the first material layer than to the second electrode.

[0009] In some embodiments, in the sub-pixel group, the area of ​​the orthographic projection of the first material layer included in the multiple sub-pixels on the plane where the pixel layer is located is larger than the area of ​​the orthographic projection of the first light extraction layer included in each sub-pixel on the plane where the pixel layer is located, and the orthographic projection of the first material layer included in the multiple sub-pixels on the plane where the pixel layer is located exceeds the part of the area where the first light extraction layer included in the multiple sub-pixels is located, and surrounds the area where the light-emitting elements included in the multiple sub-pixels are located.

[0010] In some embodiments, the first light emitting diode further includes a reflective layer, which is disposed on a side of the first light emitting diode away from the light emitting surface and at least covers a region where the light emitting surface of the first light emitting diode is located.

[0011] In some embodiments, the subpixel group further includes at least one third subpixel, and at least the second material layer of the first material layer and the second material layer included in the at least one third subpixel includes a third light-conversion material, and the third light-conversion material is configured to absorb light propagating in the first material layer and the second material layer included in the third reference subpixel, and convert the absorbed light into light of a fourth color for emission; or, at least the second material layer of the first material layer and the second material layer included in the at least one third subpixel includes second scattering particles, and the second scattering particles are configured to scatter light propagating in the first material layer and the second material layer included in the third reference subpixel; the third reference subpixel is the third subpixel to which the third light-conversion material or the second scattering particles belong; wherein the second color, the third color and the fourth color are three primary colors; or, the second color, the first color and the fourth color are three primary colors; or, the second color, the third color and the first color are three primary colors.

[0012] In some embodiments, the first sub-pixel, the second sub-pixel and the third sub-pixel are respectively a red sub-pixel, a green sub-pixel and a blue sub-pixel, and in the sub-pixel group, the areas of the at least one first sub-pixel and the at least one third sub-pixel are both smaller than the area of ​​the at least one second sub-pixel, and the area of ​​the at least one first sub-pixel is roughly equivalent to the area of ​​the at least one third sub-pixel; or, the first sub-pixel, the second sub-pixel and the third sub-pixel are respectively a red sub-pixel, a blue sub-pixel and a green sub-pixel, and the areas of the at least one first sub-pixel and the at least one second sub-pixel are both smaller than the area of ​​the at least one third sub-pixel, and the area of ​​the at least one first sub-pixel is roughly equivalent to the area of ​​the at least one second sub-pixel.

[0013] In some embodiments, in the sub-pixel group, the number of the red sub-pixel and the number of the blue sub-pixel are both one, the number of the green sub-pixel is two, and the areas of one red sub-pixel, one blue sub-pixel, and one green sub-pixel are equal, and the multiple sub-pixels included in the sub-pixel group are arranged in an array.

[0014] In some embodiments, in the sub-pixel group, two green sub-pixels are located in different rows and different columns, respectively.

[0015] In some embodiments, the present invention further comprises: a black matrix disposed between the plurality of sub-pixels; when the substrate serves as the first material layer, at least a portion of the black matrix is ​​disposed in the same layer as the second material layer and contacts the second material layer of two adjacent sub-pixels; when the substrate is disposed on a side of the first material layer away from the light-emitting element, at least a portion of the black matrix is ​​disposed in the same layer as the first material layer and the second material layer and contacts the second material layer and the first material layer of two adjacent sub-pixels.

[0016] In some embodiments, when the base serves as the first material layer, the light-emitting substrate further comprises a second light extraction layer and a light absorption pattern, the second light extraction layer and the light absorption pattern are both arranged at positions corresponding to the reference pattern, and the second light extraction layer and the light absorption pattern are both located on the side of the first material layer away from the reference pattern, the second light extraction layer is configured to extract light propagating in the first material layer in the form of total reflection to the side away from the first material layer, the light absorption pattern is arranged on the side of the second light extraction layer away from the first material layer, and is in contact with the second light extraction layer; wherein the reference pattern is a portion of the black matrix arranged on the same layer as the second material layer.

[0017] In some embodiments, when the second surface is the surface of the first material layer close to the light-emitting element, and in the sub-pixel group, the positive projection of the first material layer included in the multiple sub-pixels on the plane where the pixel layer is located exceeds the area where the first light extraction layer included in the multiple sub-pixels is located and surrounds the area where the light-emitting elements included in the multiple sub-pixels are located, a pixel driving circuit is also provided on the substrate, and the portion of the black matrix located between two adjacent sub-pixel groups is arranged in the same layer as the first material layer and / or the second material layer, and the remaining portion includes a first portion arranged between the first material layer and / or the second material layer included in two adjacent sub-pixels in the same sub-pixel group, and a second portion arranged on the circuit routing between the light-emitting elements included in two adjacent sub-pixels in the same sub-pixel group and the pixel driving circuit.

[0018] In some embodiments, the second portion is disposed on a side of the light-emitting element away from the first material layer.

[0019] In some embodiments, the first light extraction layer includes a lens structure, and a grating structure arranged on the side of the lens structure away from the light-emitting element, and the surface of the grating structure away from the light-emitting element is the first surface; the lens structure is configured to collimate the light emitted by the light-emitting element, and the grating structure is configured to deflect the light emitted by the lens structure so as to deflect the light emitted by the light-emitting element into the first material layer at the preset angle.

[0020] In some embodiments, the refractive index of the lens structure is 1.2 to 1.4, the arch height of the lens structure is 1 / 3 of the aperture of the lens structure, and the spacing between the lens structure and the grating structure is greater than or equal to 0 nm and less than or equal to 200 nm.

[0021] In some embodiments, the duty cycle of the grating structure is 0.4 to 0.6.

[0022] In some embodiments, the grating structure is a zero-order grating, a tilted grating, or a blazed grating.

[0023] In some embodiments, when the grating structure is a zero-order grating, the grating constant of the grating structure is 410 nm and the thickness is 280 nm; when the grating structure is a tilted grating, the grating constant of the grating structure is 410 nm, the thickness is 450 nm, and the tilt angle is 20 degrees; when the grating structure is a blazed grating, the grating constant of the blazed structure is 480 nm and the blaze angle is 35 degrees.

[0024] In some embodiments, the light emitting substrate further includes a transparent material layer filled between the grating and the lens structure, and the refractive index of the transparent material layer is 1.2-1.3.

[0025] In some embodiments, it also includes: a filter film and / or an anti-reflection film; the filter film and / or the anti-reflection film are arranged on the side of the second material layer facing the second surface; the filter film includes a filter unit arranged in the area where each sub-pixel is located, and the filter unit is configured to allow light of a first wavelength to pass through and absorb light of a second wavelength. The light of the first wavelength is the light emitted by the sub-pixel in the area where the filter unit is located, and the light of the second wavelength is the light in the remaining bands within the visible light band except the first wavelength.

[0026] On the other hand, a light-emitting device is provided, comprising: the light-emitting substrate as described above.

[0027] In another aspect, a method for preparing a light-emitting substrate is provided, comprising:

[0028] The pixel layer is formed; the pixel layer includes a plurality of sub-pixels.

[0029] Each subpixel includes a light-emitting element, a first light extraction layer disposed on a light-emitting surface of the light-emitting element, a first material layer disposed on a first surface of the first light extraction layer, and a second material layer in contact with a second surface of the first material layer. The light-emitting element is configured to emit light of a first color, the first light extraction layer is configured to deflect the light emitted by the light-emitting element at a predetermined angle into the first material layer, and the first and second material layers are configured to allow the light deflected at the predetermined angle to propagate through the first and second material layers. The first surface is a surface of the first light extraction layer away from the light-emitting element, and the second surface is a surface of the first material layer closer to or farther from the light-emitting element. The multiple subpixels include at least one first subpixel, at least the second material layer of the first and second material layers included in the at least one first subpixel includes a first light conversion material. The first light conversion material is configured to absorb light propagating through the first and second material layers included in a first reference subpixel and convert the absorbed light into light of a second color for output. The first reference subpixel is the first subpixel to which the first light conversion material belongs.

[0030] In some embodiments, the light-emitting substrate further includes: a base; the base serves as a first material layer, and the forming of the pixel layer includes: forming a first light extraction layer on the base, forming a second material layer on the base, and forming the plurality of light-emitting elements on the base.

[0031] Alternatively, the second surface is a surface of the first material layer close to the light-emitting element, the substrate is provided on a side of the first material layer away from the light-emitting element, and the forming of the pixel layer includes:

[0032] The steps of forming the first material layer on the substrate, forming the first light extraction layer on the substrate, forming the second material layer on the substrate, and forming the plurality of light emitting elements on the substrate.

[0033] In some embodiments, a pixel driving circuit is further provided on the substrate, and the plurality of sub-pixels further include at least one second sub-pixel, the light-emitting substrate includes a plurality of pixel regions, the plurality of sub-pixels form at least one sub-pixel group, the sub-pixel group is located in one pixel region, and the sub-pixel group includes at least one first sub-pixel and at least one second sub-pixel; in the sub-pixel group, the light-emitting elements included in the plurality of sub-pixels are all first light-emitting diodes, and the light-emitting colors of the light-emitting elements included in the plurality of sub-pixels are the same, the first light-emitting diode includes a first electrode and a second electrode, and a semiconductor layer provided between the first electrode and the second electrode, and the light-emitting elements included in the plurality of sub-pixels share the same first electrode; the step of forming the plurality of light-emitting elements on the substrate includes:

[0034] A plurality of second light-emitting diodes are manufactured, each of which includes a plurality of first light-emitting diodes, the plurality of first light-emitting diodes including a first electrode, a second electrode, and a semiconductor layer formed between the first electrode and the second electrode, and the plurality of first light-emitting diodes share the same first electrode.

[0035] The plurality of first light emitting diodes are transferred onto a substrate, and the first light emitting diodes included in each second light emitting diode are electrically connected to the pixel driving circuit through the first electrode and respective second electrodes.

[0036] In some embodiments, the first light extraction layer includes a lens structure and a grating structure disposed on a side of the lens structure away from the light-emitting element, and the light-emitting element is a first light-emitting diode.

[0037] The step of forming the first light extraction layer on the substrate comprises:

[0038] The grating structure is formed on the substrate; before the multiple first light-emitting diodes are transferred to the substrate, the lens structure is formed on one side of the light-emitting surface of each first light-emitting diode; and when the multiple first light-emitting diodes are transferred to the substrate, the lens structure is transferred to the substrate.

[0039] Alternatively, before transferring the plurality of second light-emitting diodes to the substrate, a transparent material layer is formed on the substrate in the area where the grating structure is located, and the lens structure is formed by embossing on a side of the transparent material layer away from the grating structure, wherein the refractive index of the transparent material layer is 1.2 to 1.3. BRIEF DESCRIPTION OF THE DRAWINGS

[0040] To more clearly illustrate the technical solutions of the present disclosure, the following briefly introduces the drawings required for use in some embodiments of the present disclosure. Obviously, the drawings described below are only drawings of some embodiments of the present disclosure, and those skilled in the art can also derive other drawings based on these drawings. Furthermore, the drawings described below are schematic diagrams and are not intended to limit the actual dimensions of the products, actual processes of the methods, actual timing of signals, and the like involved in the embodiments of the present disclosure.

[0041] Figure 1A is a cross-sectional structural diagram of a light-emitting substrate according to some embodiments;

[0042] Figure 1B According to some embodiments Figure 1A The structure diagram of sub-pixel light emission;

[0043] Figure 1C is a cross-sectional structural diagram of another light-emitting substrate according to some embodiments;

[0044] Figure 1D According to some embodiments Figure 1C The structure diagram of sub-pixel light emission;

[0045] Figure 1E is a cross-sectional structural diagram of another light-emitting substrate according to some embodiments;

[0046] Figure 1F According to some embodiments Figure 1E The structure diagram of sub-pixel light emission;

[0047] Figure 1G is a top view of a light-emitting substrate according to some embodiments;

[0048] Figure 1H is a top view of another light-emitting substrate according to some embodiments;

[0049] Figure 1I According to some embodiments Figure 1H Cross-section in the A-A' direction;

[0050] Figure 1J Another embodiment according to some embodiments Figure 1H Cross-section in the A-A' direction;

[0051] Figure 1K is a reflectivity curve diagram of a reflective layer according to some embodiments;

[0052] Figure 1L is a diffraction pattern of a grating structure according to some embodiments;

[0053] Figure 1Mis a diffraction pattern of another grating structure according to some embodiments;

[0054] Figure 1N is a diffraction pattern of yet another grating structure according to some embodiments;

[0055] Figure 1O is a structural diagram of a first light extraction layer according to some embodiments;

[0056] Figure 1P is a flow chart of cutting a semiconductor thin film according to some embodiments;

[0057] Figure 1Q is a structural diagram of forming a first electrode and a second electrode on sapphire according to some embodiments;

[0058] Figure 1R A structural diagram of stripping sapphire and forming a temporary substrate according to some embodiments;

[0059] Figure 1S A structural diagram of a plurality of second light-emitting diodes obtained by cutting a semiconductor structure according to some embodiments;

[0060] Figure 1T FIG. 4 is a structural diagram of transferring a plurality of first light-emitting diodes onto a substrate according to some embodiments. DETAILED DESCRIPTION

[0061] The following will be combined with the accompanying drawings to clearly and completely describe the technical solutions in some embodiments of the present disclosure. Obviously, the embodiments described are only some embodiments of the present disclosure, rather than all embodiments. Based on the embodiments provided by the present disclosure, all other embodiments obtained by ordinary technicians in this field are within the scope of protection of the present disclosure.

[0062] Unless the context requires otherwise, throughout the specification and claims, the term "comprise" and its other forms, such as the third person singular form "comprises" and the present participle form "comprising", are to be interpreted as open and inclusive, that is, "including, but not limited to". In the description of the specification, the terms "one embodiment", "some embodiments", "exemplary embodiments", "example", "specific example" or "some examples" are intended to indicate that the particular features, structures, materials or characteristics associated with the embodiment or example are included in at least one embodiment or example of the present disclosure. The schematic representation of the above terms does not necessarily refer to the same embodiment or example. In addition, the particular features, structures, materials or characteristics may be included in any one or more embodiments or examples in any appropriate manner.

[0063] In the following, the terms "first" and "second" are used for descriptive purposes only and should not be understood to indicate or imply relative importance or implicitly specify the number of the technical features indicated. Therefore, a feature defined as "first" or "second" may explicitly or implicitly include one or more of the features. In the description of the embodiments of the present disclosure, unless otherwise specified, "plurality" means two or more.

[0064] “At least one of A, B and C” has the same meaning as “at least one of A, B or C” and both include the following combinations of A, B and C: A only, B only, C only, the combination of A and B, the combination of A and C, the combination of B and C, and the combination of A, B and C.

[0065] “A and / or B” includes the following three combinations: A only, B only, and a combination of A and B.

[0066] The use of "adapted to" or "configured to" herein is intended to be open and inclusive language that does not exclude devices adapted or configured to perform additional tasks or steps.

[0067] Additionally, the use of “based on” is meant to be open and inclusive, as a process, step, calculation, or other action “based on” one or more stated conditions or values ​​may, in practice, be based on additional conditions or values ​​beyond those stated.

[0068] Exemplary embodiments are described herein with reference to cross-sectional and / or plan views that are idealized exemplary drawings. In the drawings, the thicknesses of layers and regions are exaggerated for clarity. Therefore, variations in shape relative to the drawings due to, for example, manufacturing techniques and / or tolerances are contemplated. Therefore, the exemplary embodiments should not be construed as limited to the shapes of the regions shown herein, but rather include deviations in shape due to, for example, manufacturing. For example, an etched region shown as a rectangle will typically have curved features. Therefore, the regions shown in the drawings are schematic in nature, and their shapes are not intended to illustrate the actual shape of regions of the device and are not intended to limit the scope of the exemplary embodiments.

[0069] Some embodiments of the present disclosure provide a light-emitting device, which includes a light-emitting substrate and may of course also include other components, for example, it may include a circuit for providing an electrical signal to the light-emitting substrate to drive the light-emitting substrate to emit light. The circuit can be called a control circuit and may include a circuit board and / or IC (Integrate Circuit) electrically connected to the light-emitting substrate.

[0070] In some embodiments, the light emitting device may be a lighting device, in which case the light emitting device is used as a light source to achieve a lighting function. For example, the light emitting device may be a backlight module in a liquid crystal display device, a lamp for internal or external lighting, or various signal lights.

[0071] In other embodiments, the light-emitting device may be a display device, in which case the light-emitting substrate is a display substrate for realizing the function of displaying an image (i.e., a picture). The light-emitting device may include a display or a product including a display. The display may be a flat panel display (FPD), a microdisplay, and the like. If divided according to whether the user can see the back of the display, the display may be a transparent display or an opaque display. If divided according to whether the display can be bent or curled, the display may be a flexible display or an ordinary display (which may be called a rigid display). For example, products including a display may include: computer monitors, televisions, billboards, laser printers with display functions, telephones, mobile phones, personal digital assistants (PDAs), laptop computers, digital cameras, camcorders, viewfinders, vehicles, large-area walls, theater screens, or stadium signs.

[0072] Some embodiments of the present disclosure provide a light-emitting substrate, such as Figures 1A to 1FAs shown, the light-emitting substrate 1 includes a pixel layer 12. The pixel layer 12 includes a plurality of sub-pixels P. Each sub-pixel P includes a light-emitting element 13, a first light extraction layer 14 disposed on the light-emitting surface 13a side of the light-emitting element 13, a first material layer 15 disposed on the first surface 14a side of the first light extraction layer 14, and a second material layer 16 in contact with the second surface 15a of the first material layer 15. The light-emitting element 13 is configured to emit light of a first color, the first light extraction layer 14 is configured to deflect the light emitted by the light-emitting element 13 at a preset angle into the first material layer 15, and the first material layer 15 and the second material layer 16 are configured to allow the light deflected at the preset angle to propagate through the first material layer 15 and the second material layer 16. The first surface 14a is the surface of the first light extraction layer 14 away from the light-emitting element 13, and the second surface 15a is the surface of the first material layer 15 close to or away from the light-emitting element 13. The multiple sub-pixels P include at least one first sub-pixel P1, and at least the second material layer 16 in the first material layer 15 and the second material layer 16 included in the at least one first sub-pixel P1 includes a first light-conversion material. The first light-conversion material is configured to absorb light propagating in the first material layer 15 and the second material layer 16 included in the first reference sub-pixel, and convert the absorbed light into light of a second color for output. The first reference sub-pixel is the first sub-pixel P1 to which the first light-conversion material belongs.

[0073] In some embodiments, the second surface 15a and the third surface 16a reflect the reference light, so that the light deflected at a preset angle propagates through the first material layer 15 and the second material layer 16. The third surface 16a is a surface of the second material layer 16 away from the first material layer 15. The reference light is deflected at the preset angle into the first material layer 15 and enters the first material layer 15 and the second material layer 16 during propagation.

[0074] It should be noted that, according to the fact that at least the second material layer 16 of the first material layer 15 and the second material layer 16 included in at least one first sub-pixel P1 includes the first light conversion material, there are two possible situations. In the first situation, the first material layer 15 included in at least one first sub-pixel P1 does not include the first light conversion material, and the second material layer 16 includes the first light conversion material. In this case, the propagation path of the light deflected at a preset angle in the first material layer 15 and the second material layer 16 and the mechanism of action of the first light conversion layer material are as follows: Figure 1BAs shown, first, the light deflected into the first material layer 15 at a preset angle is reflected by the second surface 15a, causing the light deflected into the first material layer 15 at the preset angle to propagate in the first material layer 15. Then, when the light deflected into the first material layer 15 at the preset angle propagates to the second material layer 16, the light deflected into the first material layer 15 at the preset angle enters the second material layer 16, is reflected by the fourth surface 16a, and propagates in the second material layer 16. During this process, a portion of the light deflected into the first material layer 15 at the preset angle (herein referred to as the first portion) is absorbed by the first light conversion material contained in the second material layer 16 and is then emitted after wavelength conversion. The remaining portion not absorbed by the second material layer 16 (herein referred to as the second portion) enters the first material layer 15 and continues to propagate in the first material layer 15. This cycle is repeated, and the light deflected into the first material layer 15 at the preset angle can be continuously absorbed by the first light conversion material contained in the second material layer 16, thereby improving the light conversion efficiency. In the second case, the first material layer 15 and the second material layer 16 included in at least one first sub-pixel P1 both include the first light conversion material. In this case, the propagation path of the light deflected at a preset angle in the first material layer 15 and the second material layer 16 and the action mechanism of the first light conversion layer material are as follows: First, the light deflected into the first material layer 15 at a preset angle is reflected by the second surface 15a, so that the light deflected into the first material layer 15 at a preset angle propagates in the first material layer 15. At the same time, a portion of the light deflected into the first material layer 15 at a preset angle (referred to as the first portion herein) is absorbed by the first light conversion material included in the first material layer 15 and is emitted after wavelength conversion, and the rest of the light not reflected by the first light conversion material included in the first material layer 15 is emitted. The part absorbed by the first light conversion material (referred to as the second part here) enters the second material layer 16 when it propagates to the second material layer 16, is reflected by the fourth surface 16a, and propagates in the second material layer 16. During this process, part of the second part (referred to as the first sub-part here) is absorbed by the first light conversion material contained in the second material layer 16 and is emitted after wavelength conversion. The remaining part not absorbed by the first light conversion material contained in the second material layer 16 (referred to as the second sub-part here) enters the first material layer 15 and continues to propagate in the first material layer 15. In this continuous cycle, the light deflected into the first material layer 15 at a preset angle can be continuously absorbed by the first light conversion material contained in the second material layer 16, thereby improving the light conversion efficiency.

[0075] Specifically, the material of the first material layer 15 and the material of the second material layer 16 can be selected to control the refractive index of the first material layer 15 and the refractive index of the second material layer 16, so that the reference light can be totally reflected at the interface between the first material layer 15 and the dielectric layer located on the side of the first material layer 15 away from the second material layer 16, and so that a part of the reference light (such as the second part) can be totally reflected at the interface between the second material layer 16 and the dielectric layer located on the side of the second material layer 16 away from the first material layer 15 when entering the second material layer 16, so as to realize the function of the second surface 15a and the third surface 16a reflecting the reference light.

[0076] In some embodiments, the light emitting substrate 1 further includes a base 11. Figure 1C As shown, the substrate 11 serves as the first material layer 15. Alternatively, as Figure 1A As shown, the second surface 15 a is the surface of the first material layer 15 close to the light emitting element 13 , and the substrate 11 is disposed on a side of the first material layer 15 away from the light emitting element 13 and in contact with the first material layer 15 .

[0077] In these embodiments, when the substrate 11 is used as the first material layer 15, the material of the substrate 11 may be glass. In this case, in order to allow the reference light to pass between the first material layer 15 and the dielectric layer (such as the dielectric layer 20) located on the side of the first material layer 15 away from the second material layer 16, Figure 1C The substrate 11 and the second material layer 16 are shown in FIG. 1 , which refers to an air layer in this example. The substrate 11 is configured to have a total internal reflection at an interface between the second material layer 16 and the dielectric layer (which may also be an air layer (refractive index is approximately 1)) located on the side of the second material layer 16 away from the first material layer 15. The refractive index of the substrate 11 may be 1.45 to 1.55, and the refractive index of the second material layer 16 may be 1.4 to 1.6. In this case, when the refractive index of the substrate 11 and the refractive index of the second material layer 16 are determined, a suitable deflection angle (which may be a preset angle in this example, which refers to the angle between the light deflected into the first material layer 15 and the normal to the light exiting surface) may be set to cause the reference light to be totally reflected at an interface between the second surface 15a and the dielectric layer located on the side of the first material layer 15 away from the second material layer 16, and to cause the portion of the reference light entering the second material layer 16 to be totally reflected at an interface between the third surface 16a and the dielectric layer located on the side of the second material layer 16 away from the first material layer 15.

[0078] For example, the preset angle may be greater than 25 degrees, for example, the preset angle may be 40 degrees.

[0079] In the case where the second surface 15a is the surface of the first material layer 15 close to the light emitting element 13, since the substrate 11 is provided on the side of the first material layer 15 away from the light emitting element 13, the dielectric layer located on the side of the first material layer 15 away from the second material layer 16 is the substrate 11. In this case, in order to allow the reference light to pass between the first material layer 15 and the dielectric layer located on the side of the first material layer 15 away from the second material layer 16 (such as Figure 1A As shown, total reflection occurs at the interface between the second material layer 16 and the dielectric layer (which may also be an air layer here) located on the side of the second material layer 16 away from the first material layer 15, and part of the reference light, when entering the second material layer 16, can be totally reflected at the interface between the second material layer 16 and the dielectric layer (which may also be an air layer here) located on the side of the second material layer 16 away from the first material layer 15. The refractive index of the substrate 11 can be 1.45 to 1.55, the refractive index of the first material layer 15 can be 1.7 to 1.9, and the refractive index of the second material layer 16 can be 1.5 to 1.7. At this time, when the refractive index of the substrate 11, the refractive index of the first material layer 15 and the refractive index of the second material layer 16 are determined, a suitable deflection angle can be set (here it can be a preset angle, the preset angle refers to the angle between the light deflected into the first material layer 15 and the normal of the light-emitting surface) so that the reference light is totally reflected at the interface between the second surface 15a and the dielectric layer located on the side of the first material layer 15 away from the second material layer 16, and the part of the reference light entering the second material layer 16 is totally reflected at the interface between the fourth surface 16a and the dielectric layer located on the side of the second material layer 16 away from the first material layer 15.

[0080] For example, the preset angle may be greater than 25 degrees, for example, the preset angle may be 50 degrees.

[0081] In some embodiments, as Figures 1A to 1D As shown, when the second surface 15a is the surface of the first material layer 15 close to the light-emitting element 13, the area of ​​the orthographic projection of the first material layer 15 on the plane where the pixel layer 12 is located is larger than the area of ​​the orthographic projection of the first light extraction layer 14 on the plane where the pixel layer 12 is located, and the portion of the surface of the first material layer 15 facing the light-emitting element 13 that exceeds the area where the first light extraction layer 14 is located forms the second surface 15a.

[0082] That is, in these embodiments, the second surface 15a and the third surface 15b are located on the same side of the first material layer 15 along its thickness direction. At this time, the second material layer 16 and the light-emitting element 13 are located on the same side of the first material layer 15 along its thickness direction. The area of ​​the region where the second material layer 16 is located can be equal to the area of ​​the region where the first material layer 15 is located minus the area of ​​the region where the light-emitting element 13 is located. In this case, compared with the case where the second material layer 16 and the light-emitting element 13 are located on opposite sides of the first material layer 15 along its thickness direction, the thickness of the entire light-emitting substrate 1 can be reduced to a certain extent.

[0083] At the same time, since the above-mentioned first material layer 15 and second material layer 16 are configured to allow light deflected at a preset angle to propagate in the first material layer 15 and the second material layer 16, and at least the second material layer 16 of the first material layer 15 and the second material layer 16 included in at least one first sub-pixel P1 includes the first light conversion material, therefore, when the second material layer 16 included in at least one first sub-pixel P1 includes the first light conversion material and the first material layer 15 does not include the first light conversion material, in order to make the light extraction efficiency higher, at least one first sub-pixel P1 can emit light to the side of the first material layer 15 facing the second material layer 16 (here, as Figure 1D As shown, light is emitted upward). In the case where at least one first sub-pixel P1 can emit light to the side of the first material layer 15 away from the second material layer 16, the light emitted by the at least one first sub-pixel P1 also needs to pass through the substrate 11 to be emitted, which will reduce the light extraction efficiency. In the case where the first material layer 15 and the second material layer 16 contained in the at least one first sub-pixel P1 both include the first light conversion material, the at least one first sub-pixel P1 can emit light to both sides of the first material layer 15 toward and away from the second material layer 16. Of course, in order to make the light extraction efficiency higher, the at least one first sub-pixel P1 can emit light to the side of the first material layer 15 toward the second material layer 16. The specific reasoning can refer to the description that the second material layer 16 contained in the at least one first sub-pixel P1 includes the first light conversion material, and the first material layer 15 does not include the first light conversion material.

[0084] In other embodiments, Figure 1E and Figure 1F As shown, when the second surface 15a is the surface of the first material layer 15 away from the light-emitting element 13, the area of ​​the orthographic projection of the first material layer 15 on the plane where the pixel layer 12 is located is greater than or equal to the area of ​​the orthographic projection of the first light extraction layer 14 on the plane where the pixel layer 12 is located, and the surface of the first material layer 15 away from the light-emitting element 13 forms the second surface 15a.

[0085] That is, in these embodiments, the second material layer 16 and the light-emitting element 13 are located on opposite sides of the first material layer 15 along its thickness direction. The area of ​​the region where the second material layer 16 is located can be equal to the area of ​​the region where the first material layer 15 is located. Since the area of ​​the orthographic projection of the first material layer 15 on the plane where the pixel layer 12 is located is greater than or equal to the area of ​​the orthographic projection of the first light extraction layer 14 on the plane where the pixel layer 12 is located, the area of ​​the region where the first material layer 15 is located can be greater than or equal to the area of ​​the region where the light-emitting element 13 is located. In other words, the area of ​​the region where the second material layer 16 is located is greater than or equal to the area of ​​the region where the light-emitting element 13 is located. In this case, compared with the case where the second material layer 16 and the light-emitting element 13 are located on the same side of the first material layer 15 along its thickness direction, a higher PPI (Pixels per inch, pixel density) can be achieved. The higher the PPI, the finer the display effect.

[0086] At the same time, since the above-mentioned first material layer 15 and second material layer 16 are configured to allow light deflected at a preset angle to propagate in the first material layer 15 and the second material layer 16, and at least the second material layer 16 of the first material layer 15 and the second material layer 16 included in at least one first sub-pixel P1 includes the first light conversion material, therefore, when the second material layer 16 included in at least one first sub-pixel P1 includes the first light conversion material and the first material layer 15 does not include the first light conversion material, in order to make the light extraction efficiency higher, at least one first sub-pixel P1 can emit light to the side of the first material layer 15 facing the second material layer 16 (here, as Figure 1F As shown, light is emitted downward). In the case where at least one first sub-pixel P1 can emit light to the side of the first material layer 15 away from the second material layer 16, the light emitted by at least one first sub-pixel P1 also needs to be emitted through the substrate 11, which will reduce the light extraction efficiency. In the case where the first material layer 15 and the second material layer 16 contained in at least one first sub-pixel P1 both include the first light conversion material, there are two possible situations according to whether the area of ​​the orthographic projection of the first material layer 15 on the plane where the pixel layer 12 is located is greater than or equal to the area of ​​the orthographic projection of the first light extraction layer 14 on the plane where the pixel layer 12 is located. In the first situation, the area of ​​the orthographic projection of the first material layer 15 on the plane where the pixel layer 12 is located is greater than the area of ​​the orthographic projection of the first light extraction layer 14 on the plane where the pixel layer 12 is located. At this time, at least one first sub-pixel P1 can emit light to both sides of the first material layer 15 toward and away from the second material layer 16. In the second case, the area of ​​the orthographic projection of the first material layer on the plane where the pixel layer 12 is located is equal to the area of ​​the orthographic projection of the first light extraction layer 14 on the plane where the pixel layer 12 is located. At this time, at least one first sub-pixel P1 can emit light to the side of the first material layer 15 toward the second material layer 16.

[0087] Of course, in these embodiments, to achieve a higher PPI (Pixels per inch, pixel density), optionally, the area of ​​the orthographic projection of the first material layer 15 on the plane where the pixel layer 12 is located is equal to the area of ​​the orthographic projection of the first light extraction layer 14 on the plane where the pixel layer 12 is located. In other words, at least one first sub-pixel P1 emits light toward the side of the first material layer 15 facing the second material layer 16, that is, at least one first sub-pixel P1 emits light downward.

[0088] The light-emitting element 13 may be, for example, an electroluminescent element, such as an OLED (Organic Light-Emitting Diode) element, a light-emitting diode, etc. The first light-conversion material may be, for example, a quantum dot light-emitting material.

[0089] Compared to OLED light-emitting devices that use organic electroluminescent materials to emit light and light-emitting diodes that use PN junctions to emit light, quantum dot light-emitting materials are semiconductor crystals that have quantum confinement effects in all three dimensions of space. The quantum confinement effect refers to the fact that when the geometric radius of the semiconductor crystal material is reduced to less than the exciton Bohr radius of its bulk material (nanometer level), the electron energy levels near the Fermi level (such as the energy levels of the valence band and conduction band of the semiconductor crystal) will split from a continuous state to discrete energy levels. At this size, the energy levels of its excited state will correspond to different emitted photon energies at different sizes. Therefore, by controlling the radius of the quantum dot light-emitting material, the wavelength of its emitted light can be controlled. In addition, compared with organic electroluminescent materials and PN junctions, quantum dot light-emitting materials have the advantages of higher theoretical luminous efficiency, wider color gamut, better color saturation and vividness, and lower energy consumption costs.

[0090] Based on the above, the light-emitting element 13 is used to emit light of a first color (such as blue light), and then the quantum dot light-emitting material is used to convert the first color light into light of a second color (such as red light or green light). The light-emitting element 13 with higher blue light luminescence efficiency can be selected to be combined with the quantum dot light-emitting material to achieve an improvement in the luminescence efficiency of the remaining colors of light (such as red light or green light), thereby improving the luminescence efficiency and luminescence effect of the light-emitting substrate as a whole.

[0091] In some embodiments, the light-emitting element 13 is a light-emitting diode. For light-emitting diodes, blue-green light can be obtained from InGaN system materials, with a corresponding energy band gap of approximately 2.7 eV, and red light can be obtained from GaAs system materials, with a corresponding energy band gap of approximately 1.7 eV. However, the component segregation effect and V-type defect generation caused by the high In component of green LEDs will lead to deterioration of device performance. At the same time, the quantum confinement Stark effect (QCSE) caused by the polarization effect will also cause a decrease in luminous efficiency. The light extraction efficiency of red LEDs is also low due to the high refractive index of GaAs materials (such as the refractive index for 600nm light is 3.9), which restricts the application of red and green LEDs.

[0092] In these embodiments, by selecting a light-emitting diode as the light-emitting element 13, the advantages of the light-emitting diode's higher blue light luminescence efficiency and the quantum dot light-emitting material's ability to improve the luminescence efficiency of other colors of light can be well utilized, so as to improve the luminescence efficiency and luminescence effect of the light-emitting substrate as a whole.

[0093] However, for the solution of combining the light-emitting element 13 (a light-emitting diode or an OLED light-emitting device) with the quantum dot light-emitting material in the related art, not all light-emitting elements 13 (a light-emitting diode or an OLED light-emitting device) combined with the quantum dot light-emitting material can improve the luminous efficiency. It is also necessary to select the quantum dot light-emitting material according to the actual situation, and even to dope scattering particles into the quantum dot light-emitting material to improve the luminous efficacy and light conversion efficiency of the quantum dot light-emitting material.

[0094] Currently, the more mature quantum dot luminescent materials mainly include CdSe and InP. Among them, CdSe quantum dot luminescent materials have the advantages of high luminous efficiency, narrow half-width, low self-absorption, and good stability. However, Cd is more harmful to the environment and is subject to more environmental regulations. The InP system has a slightly lower luminous efficiency than the Cd system and is more severely red-shifted at high concentrations. Therefore, using InP quantum dot luminescent materials as the light conversion layer requires a large film thickness within a certain concentration range to achieve high luminous efficiency and absorption. Especially when the quantum dot luminescent material is not doped with scattering particles, to ensure high absorption efficiency and luminous efficiency, the film thickness of the light conversion layer is generally thick, about 10μm or more. Therefore, for high PPI pixel designs, the light conversion layer cannot be well applied. For example, in a 400PPI light-emitting substrate, the sub-pixel pitch is 21*63μm, and in an 800PPI light-emitting substrate, the sub-pixel pitch is 10.5*31.5μm, which restricts its application in high PPI displays.

[0095] In the embodiment of the present disclosure, a first light extraction layer 14 is provided, a first material layer 15 is provided on a side of the first light extraction layer 14 away from the light emitting element 13, and a second material layer 16 is provided on the second surface 15a of the first material layer 15. Since the first light extraction layer 14 is configured to deflect the light emitted by the light emitting element 13 into the first material layer 15 at a preset angle, the first material layer 15 and the second material layer 16 are configured to allow the light deflected at the preset angle to propagate in the first material layer 15 and the second material layer 16. At least the second material layer 16 of the first material layer 15 and the second material layer 16 included in at least one first sub-pixel P1 includes the first light conversion material. Therefore, taking each sub-pixel P as an example in which light is emitted upward, as shown in FIG. Figure 1B and Figure 1D As shown, by utilizing the transmission characteristics of electromagnetic waves at the interfaces of various dielectric layers (such as the first light extraction layer 14, the first material layer 15, and the second material layer 16), the light emitted by the light-emitting element 13 can be repeatedly oscillated and propagated in the first material layer 15 and the second material layer 16. When the second material layer 16 includes the first light conversion material, and when the first material layer 15 does not include the first light conversion material, the first light conversion material contained in the second material layer 16 can continuously absorb and convert the wavelength of the light repeatedly oscillating in the first material layer 15 and the second material layer 16, thereby improving the light conversion efficiency. When both the first material layer 15 and the second material layer 16 include the first light conversion material, the light emitted by the light-emitting element 13 repeatedly oscillates and propagates in the first material layer 15 and the second material layer 16. During this process, the first light conversion material contained in the first material layer 15 can absorb and convert the wavelength of the light repeatedly oscillating in the first material layer 15, and the first light conversion material contained in the second material layer 16 can absorb and convert the wavelength of the light repeatedly oscillating in the first material layer 15, similarly improving the light conversion efficiency.

[0096] To summarize, by setting a first material layer 15 and a second material layer 16, and allowing the light deflected into the first material layer 15 at a preset angle to oscillate repeatedly in the first material layer 15 and the second material layer 16, the first light conversion material contained in the first material layer 15 and the second material layer 16 can repeatedly absorb and convert the light deflected into the first material layer 15 at a preset angle. Compared with the related art, when using quantum dot luminescent materials to convert the wavelength of light emitted by the light-emitting element 13, in order to improve the light conversion efficiency, it is necessary to dope scattering particles into the quantum dot luminescent material. Therefore, there is no need to dope scattering particles into the quantum dot luminescent material, thereby reducing the thickness of the light conversion layer (such as the first material layer 15 and the second material layer 16 including the first light conversion material) to achieve high PPI display.

[0097] In addition, compared with the related art in which scattering particles are doped into quantum dot luminescent materials, the embodiments of the present disclosure do not need to dope scattering particles into the light conversion layer, which can simplify the manufacturing process and reduce the manufacturing cost.

[0098] It should be noted here that, in the above embodiment, the first reference sub-pixel is the first sub-pixel P1 to which the first light-conversion material belongs, which means that the first reference sub-pixel is any one of at least one first sub-pixel P1, and the light-conversion material contained therein absorbs and converts the light in the first material layer 15 and the second material layer 16 contained therein.

[0099] The plurality of sub-pixels P may all be first sub-pixels P1 , or some of the plurality of sub-pixels P may be first sub-pixels P1 .

[0100] When all of the sub-pixels P are first sub-pixels P1, the light-emitting substrate 1 emits monochromatic light, such as red or green light. In this case, the light-emitting substrate can be used for illumination, i.e., in a lighting device, or for displaying a single-color image or picture, i.e., in a display device.

[0101] When some of the multiple subpixels P are first subpixels P1, the remaining subpixels P can emit light of other colors. For example, when the first subpixel P1 emits red light, the remaining subpixels P can emit green light, blue light, or white light. When the first subpixel P1 emits green light, the remaining subpixels P can emit red light, blue light, or white light. Here, the light-emitting colors of the remaining subpixels P are not specifically limited.

[0102] In some embodiments, as Figure 1G 、 Figure 1H 、 Figure 1I and Figure 1J As shown, the multiple sub-pixels P also include at least one second sub-pixel P2, and at least the second material layer 16 in the first material layer 15 and the second material layer 16 included in the at least one second sub-pixel P2 includes a second light-conversion material, and the second light-conversion material is configured to absorb light propagating in the first material layer 15 and the second material layer 16 included in the second reference sub-pixel, and convert the absorbed light into light of a third color for output, or, at least the second material layer in the first material layer 15 and the second material layer 16 included in the at least one second sub-pixel P2 includes first scattering particles, and the first scattering particles are configured to scatter light propagating in the first material layer 15 and the second material layer 16 included in the second reference sub-pixel, and the second reference sub-pixel is the second sub-pixel P2 to which the second light-conversion material or the first scattering particles belong.

[0103] Here, in the case where at least the second material layer 16 in the first material layer 15 and the second material layer 16 included in at least one second sub-pixel P2 includes a second light-conversion material, the second reference sub-pixel is the second sub-pixel P2 to which the second light-conversion material belongs; in the case where at least the second material layer 16 in the first material layer 15 and the second material layer 16 included in at least one second sub-pixel P2 includes first scattering particles, the second reference sub-pixel is the second sub-pixel P2 to which the first scattering particles belong.

[0104] The second reference subpixel is the second subpixel P2 to which the second light-conversion material belongs, meaning that the second reference subpixel is any one of the at least one second subpixel, wherein the second light-conversion material contained therein absorbs and converts light in the first material layer 15 and the second material layer 16 contained therein. If at least the second material layer 16 of the first material layer 15 and the second material layer 16 contained in the at least one second subpixel P2 includes first scattering particles, the second reference subpixel is the second subpixel P2 to which the first scattering particles belong, meaning that the second reference subpixel is any one of the at least one second subpixel, wherein the first scattering particles contained therein scatter light in the first material layer 15 and the second material layer 16 contained therein.

[0105] In these embodiments, the propagation path of light deflected at a predetermined angle in the first material layer 15 and the second material layer 16 included in at least one second sub-pixel P2 and the mechanism of action of the second light-conversion material can be referenced to the propagation path of light deflected at a predetermined angle in the first material layer 15 and the second material layer 16 included in at least one first sub-pixel P1 and the mechanism of action of the first light-conversion material described above, and will not be further described here. When at least the second material layer 16 of the first material layer 15 and the second material layer 16 included in at least one second sub-pixel P2 includes first scattering particles, the mechanism of action of the first scattering particles is substantially the same as that of the second light-conversion material, except that the first scattering particles only scatter the light deflected at the predetermined angle (i.e., light of the first color) and do not perform wavelength conversion on the light deflected at the predetermined angle (i.e., light of the first color).

[0106] In these embodiments, the light-emitting substrate 1 can emit color-adjustable light (i.e., colored light). For example, when the first color is blue, the second color can be red, and the third color can be green. At this time, if at least the second material layer in the first material layer 15 and the second material layer 16 included in at least one second sub-pixel P2 includes a second light conversion material, the light-emitting substrate 1 can emit red light and green light. If at least the second material layer in the first material layer 15 and the second material layer 16 included in at least one second sub-pixel P2 includes first scattering particles, the light-emitting substrate 1 can emit blue light and red light.

[0107] At this time, the light-emitting substrate 1 can be used for lighting and decoration, that is, it can be used in a lighting device, and can also be used to display images or pictures, that is, it can be used in a display device.

[0108] In some embodiments, as Figure 1G 、 Figure 1H and Figure 1I As shown, a light-emitting substrate 1 includes multiple pixel regions Q, multiple subpixels P forming at least one subpixel group P11. Subpixel group P11 is located within one pixel region Q and includes multiple subpixels P. The multiple subpixels P included in subpixel group P11 include at least one first subpixel P1 and at least one second subpixel P2. In subpixel group P11, the light-emitting elements 13 included in the multiple subpixels P are all first light-emitting diodes, and the light-emitting elements 13 included in the multiple subpixels P emit the same color. The first light-emitting diode includes a first electrode 131 and a second electrode 132, and a semiconductor layer 133 disposed between the first electrode 131 and the second electrode 132. The light-emitting elements 13 included in the multiple subpixels P share the same first electrode 131.

[0109] In these embodiments, the multiple sub-pixels P included in a sub-pixel group P11 can form a pixel. Here, taking the example where the multiple sub-pixels P include a first sub-pixel P1 and a second sub-pixel P2 in addition to a third sub-pixel P3, where the first sub-pixel P1 is a red sub-pixel, the second sub-pixel P2 is a green sub-pixel, and the third sub-pixel P3 is a blue sub-pixel, a sub-pixel group P11 can include three first light-emitting diodes, each of which serves as the light-emitting element 13 included in the three sub-pixels P, and the three first light-emitting diodes share the same first electrode 131.

[0110] Since in the sub-pixel group P11, the light-emitting elements 13 included in the multiple sub-pixels P are all first light-emitting diodes, and the light-emitting elements 13 included in the multiple sub-pixels P share the same first electrode 131, when the first light-emitting diodes are transferred, the first light-emitting diodes included in the multiple sub-pixels P can be transferred as a whole, without transferring each first light-emitting diode, thereby improving the transfer efficiency and yield.

[0111] The first electrode 131 may be a cathode, in which case the second electrode 132 may be an anode; alternatively, the first electrode 131 may be an anode, in which case the second electrode 132 may be a cathode.

[0112] In the following embodiments, the first electrode 131 is used as a cathode and the second electrode 132 is used as an anode.

[0113] The first light-emitting diode can be a horizontal LED or a vertical LED. In the case of a horizontal LED, the semiconductor layer 133 can include an N-type semiconductor portion and a P-type semiconductor portion disposed in the same layer. The N-type semiconductor portion and the P-type semiconductor portion can be obtained by doping intrinsic gallium nitride with N-type dopant ions and P-type dopant ions. In this case, the first electrode 131 and the second electrode 132 can be located on the same side of the semiconductor layer 133. Multiple first light-emitting diodes can be obtained by cutting the P-type semiconductor portion of a large LED forming a PN junction into multiple sub-portions. For example, in the case of multiple first light-emitting diodes in which the P-type semiconductor portions are formed around the N-type semiconductor portion, a first electrode can be formed on the N-type semiconductor portion, a second electrode can be formed on each P-type semiconductor portion, and the first electrode 131 formed on the N-type semiconductor portion and the second electrode 132 formed on each P-type semiconductor portion can be electrically connected to the pixel driver. This allows multiple first light-emitting diodes to share the same first electrode 131.

[0114] In the case where the first light emitting diode is a vertical LED, the semiconductor layer 133 may include an N-type semiconductor layer and a P-type semiconductor layer, wherein the material of the N-type semiconductor layer may be N-type gallium nitride, and the material of the P-type semiconductor layer may be P-type gallium nitride. Figure 1I and Figure 1J As shown, the first electrode 131 and the second electrode 132 are located on opposite sides of the semiconductor layer 133 along the thickness direction. In this case, multiple first light-emitting diodes can be obtained by cutting the remaining part of a large LED except the N-type semiconductor layer into multiple parts. By forming the first electrode 131 on the N-type semiconductor layer, forming the second electrode 132 on each p-type semiconductor layer, and electrically connecting the first electrode 131 formed on the N-type semiconductor layer and the second electrode 132 formed on each P-type semiconductor layer to the pixel driving circuit, multiple first light-emitting diodes can share the same first electrode 131.

[0115] Of course, in the actual production process, multiple first light-emitting diodes can also be obtained by cutting the semiconductor layer 133 of a large LED into multiple parts, and then by making the first electrode 131 and connecting the first electrode 131 to the N-type semiconductor layer contained in each first light-emitting diode, multiple first light-emitting diodes can also share the same first electrode 131.

[0116] In addition, in order to improve the luminous efficiency, in some embodiments, the semiconductor layer 133 may further include a quantum hydrazine structure disposed between the P-type semiconductor layer and the N-type semiconductor layer.

[0117] In some embodiments, the first light emitting diode is a vertical LED, and the first electrode 131 is closer to the first material layer 15 than the second electrode 132 .

[0118] Compared to the first horizontal LED, where current flows horizontally between the N-type and P-type semiconductor portions, which is detrimental to current diffusion and heat dissipation, the vertical LED uses a patterned electrode and the entire P-type semiconductor layer as the second electrode 132, allowing current to flow almost entirely vertically through the LED epitaxial layer, generating very little lateral current flow and facilitating heat dissipation.

[0119] Moreover, in these embodiments, since the first electrode 131 is closer to the first material layer 15 than the second electrode 132 , compared with the second electrode 132 being closer to the first material layer 15 , the influence of light passing through the first electrode 131 on light emission can be avoided.

[0120] In some embodiments, as Figure 1G to Figure 1J As shown, in the sub-pixel group P11, the area of ​​the orthographic projection of the first material layer 15 included in the multiple sub-pixels P on the plane where the pixel layer 12 is located is larger than the area of ​​the orthographic projection of the first light extraction layer 14 included in each sub-pixel P on the plane where the pixel layer 12 is located, and the part of the orthographic projection of the first material layer 15 included in the multiple sub-pixels P on the plane where the pixel layer 12 is located that exceeds the area where the first light extraction layer 14 included in the multiple sub-pixels P is located surrounds the area where the light-emitting elements 13 included in the multiple sub-pixels P are located.

[0121] Here, still taking the upward light emission of multiple sub-pixels P as an example, the positive projection of the first material layer 15 included in the multiple sub-pixels P on the plane where the pixel layer 12 is located exceeds the area where the first light extraction layer 14 included in the multiple sub-pixels P is located, and surrounds the area where the light-emitting elements 13 included in the multiple sub-pixels P are located. This means that the effective light-emitting areas of the multiple sub-pixels P surround the area where the light-emitting elements 13 included in the multiple sub-pixels P are located.

[0122] In some embodiments, as Figure 1I and Figure 1J As shown, the first light emitting diode further includes a reflective layer 134 . The reflective layer 134 is disposed on a side of the first light emitting diode away from the light emitting surface 13 a and covers at least the area where the light emitting surface 13 a is located.

[0123] In these embodiments, the light emitted by the first light emitting diode may be further reflected to improve the light extraction efficiency of the first light emitting diode.

[0124] In some embodiments, the reflective layer 134 may include multiple layers of third material and multiple layers of fourth material alternately arranged, and the refractive index of the third material layer is smaller than the refractive index of the fourth material layer.

[0125] In these embodiments, the reflective layer 134 is a DBR (Distributed Bragg Reflection), which is a periodic structure formed by alternating dielectric layers. A layer of third material layer and a layer of fourth material layer constitute one period. Through research, it is found that a DBR film with 20 periods can meet the reflection requirements of 400nm to 650nm.

[0126] In some embodiments, the third material layer is made of TiO 2 , and the fourth material layer is made of SiO 2 .

[0127] The reflectivity curve of the DBR film with 20 cycles, in which the material of the third material layer is TiO2 and the material of the fourth material layer is SiO2, is shown in FIG. Figure 1K It can be seen that the reflectivity of the DBR film in the range of 400 nm to 650 nm is close to 100%, and it has a high reflection effect.

[0128] The refractive index of the third material layer is 2.7, and the thickness is 46.54 nm. The refractive index of the fourth material layer is 1.5, and the thickness is 94.18 nm.

[0129] In some embodiments, as Figure 1G and Figure 1H As shown, subpixel group P11 also includes at least one third subpixel P3. At least the second material layer of the first material layer and the second material layer included in the at least one third subpixel P3 includes a third light conversion material. The third light conversion material is configured to absorb light propagating in the first material layer and the second material layer included in the third reference subpixel and convert the absorbed light into light of a fourth color for output. Alternatively, at least the second material layer of the first material layer and the second material layer included in the at least one third subpixel P3 includes second scattering particles. The second scattering particles are configured to scatter light propagating in the first material layer and the second material layer included in the third reference subpixel. The second color, the third color, and the fourth color are three primary colors. Alternatively, the second color, the first color, and the fourth color are three primary colors. Alternatively, the second color, the third color, and the first color are three primary colors.

[0130] Here, in the case where at least the second material layer in the first material layer and the second material layer included in at least one third sub-pixel P3 includes a third light-conversion material, the third reference sub-pixel is the third sub-pixel to which the third light-conversion material belongs; in the case where at least the second material layer in the first material layer and the second material layer included in at least one third sub-pixel P3 includes second scattering particles, the third reference sub-pixel is the third sub-pixel to which the second scattering particles belong.

[0131] The third reference subpixel is the third subpixel to which the third light-conversion material belongs, meaning that the third reference subpixel is any one of the at least one third subpixel, wherein the third light-conversion material contained therein absorbs and converts light in the first material layer and the second material layer contained therein. If at least the second material layer of the first material layer and the second material layer contained in the at least one third subpixel P3 includes second scattering particles, the third reference subpixel is the third subpixel to which the first scattering particles belong (that is, the third subpixel is any one of the at least one third subpixel, wherein the second scattering particles contained therein scatter light in the first material layer and the second material layer contained therein).

[0132] In these embodiments, the propagation path of light deflected at a preset angle in the first and second material layers included in at least one third sub-pixel P3 and the mechanism of action of the third light-conversion material can be referenced to the propagation path of light deflected at a preset angle in the first and second material layers included in at least one first sub-pixel P1 and the mechanism of action of the first light-conversion material described above, and will not be further described here. When at least the second material layer of the first and second material layers included in at least one second sub-pixel P2 includes second scattering particles, the mechanism of action of the second scattering particles is substantially the same as that of the third light-conversion material, except that the second scattering particles only scatter light deflected at the preset angle (i.e., light of the first color) and do not perform wavelength conversion on the light deflected at the preset angle (i.e., light of the first color).

[0133] In these embodiments, the multiple subpixels P included in a subpixel group P11 can emit white light. That is, when the first color is blue, the second color can be red (green), and the third color can be green (red). In this case, at least the second material layer 16 of the first material layer 15 and the second material layer 16 included in the first subpixel P1 includes the first light-conversion material, at least the second material layer 16 of the first material layer 15 and the second material layer 16 included in the second subpixel P2 includes the second light-conversion material, and at least the second material 16 of the first material layer 15 and the second material layer 16 included in the third subpixel P3 includes second scattering particles. That is, the first subpixel P1 is a red subpixel R (green subpixel G), the second subpixel P2 is a green subpixel G (red subpixel R), and the third subpixel P3 is a blue subpixel B. Alternatively, when the first color is blue, the second color may be red (green), and the fourth color may be green (red). In this case, at least the second material layer 16 of the first material layer 15 and the second material layer 16 included in the first sub-pixel P1 includes the first light-conversion material, at least the second material layer 16 of the first material layer 15 and the second material layer 16 included in the second sub-pixel P2 includes the first scattering particles, and at least the second material layer of the first material layer 15 and the second material layer 16 included in the third sub-pixel P3 includes the third light-conversion material. That is, the first sub-pixel P1 is a red sub-pixel R (green sub-pixel G), the second sub-pixel P2 is a blue sub-pixel B, and the third sub-pixel P3 is a green sub-pixel G (red sub-pixel R). Alternatively, when the first color is blue, the second color may be cyan, the third color may be yellow, and the fourth color may be magenta. In this case, at least the second material layer 16 of the first material layer 15 and the second material layer 16 included in the first sub-pixel P1 includes the first light-conversion material, at least the second material layer of the first material layer 15 and the second material layer 16 included in the second sub-pixel P2 includes the second light-conversion material, and at least the second material layer of the first material layer 15 and the second material layer 16 included in the third sub-pixel P3 includes the third light-conversion material. That is, the first sub-pixel is a cyan sub-pixel, the second sub-pixel is a yellow sub-pixel, and the third sub-pixel is a magenta sub-pixel.

[0134] In these embodiments, the light-emitting substrate 1 can be used for lighting and decoration, that is, it can be applied to a lighting device, and can also be used to display images or pictures, that is, it can be applied to a display device, such as a full-color display device.

[0135] In some embodiments, as Figure 1G and Figure 1HAs shown, the first subpixel P1, the second subpixel P2 and the third subpixel P3 are red subpixel R, green subpixel G and blue subpixel B, respectively. In the subpixel group P11, the area of ​​at least one first subpixel P1 and at least one third subpixel P3 are smaller than the area of ​​at least one second subpixel P2, and the area of ​​at least one first subpixel P1 and the area of ​​at least one third subpixel P3 are roughly equivalent.

[0136] Among them, the area of ​​at least one first sub-pixel P1 is roughly equivalent to the area of ​​at least one third sub-pixel P3, which means that the area of ​​the effective light-emitting area of ​​at least one first sub-pixel P1 and the area of ​​the effective light-emitting area of ​​at least one third sub-pixel P3 are not much different, but are not completely the same. For example, the ratio of the area of ​​the effective light-emitting area of ​​at least one first sub-pixel P1 to the area of ​​the effective light-emitting area of ​​at least one third sub-pixel P3 can be 0.9:1.1.

[0137] In these embodiments, based on the performance characteristics of current quantum dot luminescent materials, the light conversion efficiency of red quantum dot luminescent materials is higher than that of green quantum dot luminescent materials. Therefore, by making the areas of at least one first subpixel P1 and at least one third subpixel P3 smaller than the area of ​​at least one second subpixel P2, the area of ​​at least one first subpixel P1 and the area of ​​at least one third subpixel P3 are roughly equivalent, which can increase the brightness of green light in a pixel to a certain extent, thereby better achieving white balance matching.

[0138] In some embodiments, the first subpixel P1, the second subpixel P2, and the third subpixel P3 are respectively a red subpixel R, a blue subpixel B, and a green subpixel G, and the area of ​​at least one first subpixel P1 and at least one second subpixel P2 are smaller than the area of ​​at least one third subpixel P3, and the area of ​​at least one first subpixel P1 is roughly equivalent to the area of ​​at least one second subpixel P2.

[0139] Among them, the area of ​​at least one first sub-pixel P1 is roughly equivalent to the area of ​​at least one second sub-pixel P2, which means that the area of ​​the effective light-emitting area of ​​at least one first sub-pixel P1 and the area of ​​the effective light-emitting area of ​​at least one second sub-pixel P2 are not much different, but are not completely identical. For example, the ratio of the area of ​​the effective light-emitting area of ​​at least one first sub-pixel P1 to the area of ​​the effective light-emitting area of ​​at least one second sub-pixel P2 can be 0.9:1.1.

[0140] In these embodiments, the reasoning is similar to that of the first sub-pixel P1 , the second sub-pixel P2 , and the third sub-pixel P3 being the red sub-pixel R, the green sub-pixel G, and the blue sub-pixel B, and is not repeated here.

[0141] In addition, in actual applications, since the blue sub-pixel emits light directly through the light-emitting element 13, the red sub-pixel and the green sub-pixel both need to adjust their brightness through light conversion, and the luminous brightness is not as good as that of the blue sub-pixel. Therefore, in order to further improve the white balance effect, optionally, in the sub-pixel group, the ratio of the area of ​​the effective luminous area of ​​the red sub-pixel to the area of ​​the effective luminous area of ​​the blue sub-pixel is greater than 1.

[0142] The area of ​​the effective light-emitting area of ​​the red sub-pixel here refers to the total area of ​​the effective light-emitting areas of all red sub-pixels in the sub-pixel group, and the area of ​​the effective light-emitting area of ​​the blue sub-pixel refers to the total area of ​​the effective light-emitting areas of all blue sub-pixels in the sub-pixel group.

[0143] In some embodiments, as Figure 1G and Figure 1H As shown, in subpixel group P11, there are one red subpixel R and one blue subpixel B, and two green subpixels G. The areas of one red subpixel R, one green subpixel G, and one blue subpixel B are all equal. The multiple subpixels P included in subpixel group P11 are arranged in an array.

[0144] The areas of a red sub-pixel R, a green sub-pixel G, and a blue sub-pixel B are all equal, but not completely equal. Due to errors in process manufacturing and other aspects, the areas of a red sub-pixel R, a green sub-pixel G, and a blue sub-pixel B may have slight differences. It can be understood here that the areas of a red sub-pixel R, a green sub-pixel G, and a blue sub-pixel B are all equal to the same value in theoretical design.

[0145] That is, in these embodiments, the coverage areas of the first material layer 15 and the second material layer 16 of the plurality of sub-pixels P included in the sub-pixel group P11 are substantially the same and are distributed in a certain regular pattern, which is conducive to simplifying the manufacturing process.

[0146] In some embodiments, as Figure 1G and Figure 1H As shown, in the sub-pixel group P11 , the areas of the light emitting surfaces 13 a of the light emitting elements 13 included in each sub-pixel P are substantially the same, and the plurality of light emitting elements 13 are arranged in an array.

[0147] The areas of the light-emitting surfaces 13a of the light-emitting elements 13 included in each sub-pixel P are roughly the same, but not completely the same. Due to errors in process manufacturing and other aspects, the areas of the light-emitting surfaces 13a of the light-emitting elements 13 included in each sub-pixel P may have slight differences. It can be understood here that the areas of the light-emitting surfaces 13a of the light-emitting elements 13 included in each sub-pixel P are equal to the same value in theoretical design.

[0148] In these embodiments, when the light emitting element 13 is a light emitting diode, a large light emitting diode can be cut into four equal parts to form four small light emitting diodes, which can also simplify the cutting process.

[0149] In some embodiments, in the sub-pixel group P11 , two green sub-pixels G are located in different rows and columns, respectively.

[0150] In these embodiments, Figure 1G and Figure 1H As shown, the two green sub-pixels G are located at two diagonal positions of the grid. Compared with the two green sub-pixels G being located in the same row or the same column, the green sub-pixels G can be better distributed, thereby improving the color mixing effect and the white balance effect.

[0151] In some embodiments, as Figure 1H 、 Figure 1I and Figure 1J As shown, the light-emitting substrate 1 further includes a black matrix 17 , which is disposed between the plurality of sub-pixels P.

[0152] That is, in these embodiments, when the light-emitting substrate 1 emits color-adjustable light, the provision of the black matrix 17 can prevent crosstalk between the plurality of sub-pixels P.

[0153] In some embodiments, as Figure 1H and Figure 1J As shown, when the substrate 11 is used as the first material layer 15, at least part of the black matrix 17 is provided in the same layer as the second material layer 16 and contacts the second material layer 16 included in two adjacent sub-pixels P. Figure 1H and Figure 1I As shown, when the substrate 11 is arranged on the side of the first material layer 15 away from the light-emitting element 13, at least a portion of the black matrix 17 is arranged in the same layer as the first material layer 15 and the second material layer 16, and is in contact with the second material layer 16 and the first material layer 15 included in the two adjacent sub-pixels P.

[0154] In these embodiments, when the substrate 11 is used as the first material layer 15, there are two different situations according to which the plurality of sub-pixels P can emit light upward or downward. In the first situation, the plurality of sub-pixels P all emit light upward. Figure 1H and Figure 1JAs shown, the black matrix 17 is disposed on the side of the first material layer 15 close to the light-emitting element 13. Taking the example of a sub-pixel group P11 where the orthographic projection of the first material layer 15 included in the multiple sub-pixels P on the plane of the pixel layer 12 exceeds the area where the first light extraction layer 14 included in the multiple sub-pixels P is located, and surrounds the area where the light-emitting elements 13 included in the multiple sub-pixels P are located, part of the black matrix 17 is disposed on the same layer as the second material layer 16, and the remaining part can be disposed on the circuit traces of the pixel driving circuit and located on the side of the light-emitting element 13 away from the first material layer 15. In the second scenario, the multiple sub-pixels P all emit light downward. In this case, the black matrix 17 is disposed on the side of the first material layer 15 away from the light-emitting element 13, and the entire black matrix 17 is disposed on the same layer as the second material layer 16.

[0155] In the case where the substrate 11 is disposed on a side of the first material layer 15 away from the light emitting element 13, two different situations may be possible depending on whether the plurality of sub-pixels P emit light upward or downward. In the first situation, the plurality of sub-pixels P emit light upward, and the black matrix 17 is disposed on a side of the first material layer 15 close to the light emitting element 13. In this case, Figure 1H and Figure 1I As shown, in the sub-pixel group P11, for example, the orthographic projection of the first material layer 15 included in the multiple sub-pixels P on the plane where the pixel layer 12 is located exceeds the area where the first light extraction layer 14 included in the multiple sub-pixels P is located, and surrounds the area where the light-emitting elements 13 included in the multiple sub-pixels P are located. Part of the black matrix 17 is arranged in the same layer as the first material layer 15 and the second material layer 16, and the remaining part can be arranged on the circuit traces of the pixel driving circuit and on the side of the light-emitting element 13 away from the first material layer 15. In the second case, when the multiple sub-pixels P all emit light downward, the black matrix 17 is arranged on the side of the first material layer 15 away from the light-emitting element 13. In this case, the entire black matrix 17 is arranged in the same layer as the first material layer 15 and the second material layer 16.

[0156] In these embodiments, when the substrate 11 serves as the first material layer 15, by disposing at least a portion of the black matrix 17 in the same layer as the second material layer 16 and in contact with the second material layer 16 included in two adjacent sub-pixels P, the black matrix 17 can absorb light emitted by the second material layer 16 in contact with the black matrix 17, thereby preventing crosstalk between the light emitted by the second material layer 16 included in the two adjacent sub-pixels P. When the substrate 11 is disposed on a side of the first material layer 15 away from the light-emitting element 13, by disposing at least a portion of the black matrix 17 in the same layer as the first material layer 15 and the second material layer 16 and in contact with the first material layer 15 and the second material layer 16 included in the two adjacent sub-pixels P, the black matrix 17 can absorb light emitted by the first material layer 15 and the second material layer 16 in contact with the black matrix 17, thereby preventing crosstalk between the light emitted by the first material layer 15 and the second material layer 16 included in the two adjacent sub-pixels P.

[0157] In some embodiments, as Figure 1J As shown, when the substrate 11 serves as the first material layer 15, the light-emitting substrate 1 further includes a second light extraction layer 18 and a light absorption pattern 19. Both the second light extraction layer 18 and the light absorption pattern 19 are arranged at positions corresponding to the reference pattern 171, and both the second light extraction layer 18 and the light absorption pattern 19 are located on the side of the first material layer 15 away from the reference pattern 171. The second light extraction layer 18 is configured to extract light propagating in the first material layer 15 and the second material layer 16 toward the side away from the first material layer 15. The light absorption pattern 19 is arranged on the side of the second light extraction layer 18 away from the first material layer 15 and in contact with the second light extraction layer 18. The reference pattern 171 is a portion of the black matrix 17 that is arranged on the same layer as the second material layer 16.

[0158] In these embodiments, by setting a second light extraction layer 18 and a light absorption pattern 19, a light extraction pattern can be formed between two adjacent sub-pixels P and the extracted light can be absorbed, thereby preventing the light emitted by the two adjacent sub-pixels P from crosstalking in the optical waveguide layer (substrate 11).

[0159] In some embodiments, as Figure 1H 、 Figure 1I and Figure 1JAs shown, the second surface 15a is the surface of the first material layer 15 close to the light-emitting element 13, and in the sub-pixel group P11, when the orthographic projection of the first material layer 15 included in the multiple sub-pixels P on the plane where the pixel layer 12 is located exceeds the area where the first light extraction layer 14 included in the multiple sub-pixels P is located and surrounds the area where the light-emitting elements 13 included in the multiple sub-pixels P are located, a pixel driving circuit 100 is provided on the substrate 11, and a portion of the black matrix 17 located between two adjacent sub-pixel groups P11 is provided in the same layer as the first material layer 15 and / or the second material layer 16, and the remaining portion includes a first portion 172 provided between the first material layer 15 and / or the second material layer 16 included in two adjacent sub-pixels P in the same sub-pixel group P11, and a second portion 173 provided on the circuit trace between the light-emitting element 13 included in the two adjacent sub-pixels P in the same sub-pixel group P11 and the pixel driving circuit 100.

[0160] In these embodiments, there are two possible situations. The first situation is as follows: Figure 1H and Figure 1J As shown, the substrate 11 serves as the first material layer 15. In this case, the portion of the black matrix 17 located between two adjacent sub-pixel groups P11 is provided on the same layer as the second material layer 16, thereby preventing crosstalk between the light emitted from the second material layer 16 between the two adjacent sub-pixel groups P11. The remaining portion includes a first portion 172 disposed between the second material layer 16 included in two adjacent sub-pixels P in the same sub-pixel group P11, and a second portion 173 disposed on the circuit traces between the light-emitting elements 13 included in the two adjacent sub-pixels P in the same sub-pixel group P11 and the pixel driving circuit 100. The first portion 172 can prevent crosstalk between the light emitted from the two adjacent sub-pixels P in the same sub-pixel group P11, and the second portion 173 can cover the circuit traces between the light-emitting elements 13 included in the two adjacent sub-pixels P in the same sub-pixel group P11 and the pixel driving circuit 100. Of course, the black matrix 17 can also cover the pixel driving circuit 100.

[0161] Here, the pixel driving circuit 100 is 7T1C as an example. Figure 1H As shown, the pixel driving circuit 100 may include a thin film transistor and a gate line Gate, a data line Date, a VDD line, etc. electrically connected to the thin film transistor. At this time, the black matrix 17 may also cover the thin film transistor, the gate line Gate, the data line Date and the VDD line to cover the pixel driving circuit 100.

[0162] The second case, such as Figure 1H and Figure 1IAs shown, the substrate 11 is arranged on the side of the first material layer 15 away from the light-emitting element 13. In this case, the portion of the black matrix 17 located between two adjacent sub-pixel groups P11 can be arranged in the same layer as the first material layer 15 and / or the second material layer 16. When the portion of the black matrix 17 located between two adjacent sub-pixel groups P11 is arranged in the same layer as the first material layer 15, crosstalk can be prevented between the light emitted from the first material layer 15 between the two adjacent sub-pixel groups P11. When the portion of the black matrix 17 located between two adjacent sub-pixel groups P11 is arranged in the same layer as the second material layer 16, crosstalk can be prevented between the light emitted from the second material layer 16 between the two adjacent sub-pixel groups P11. When the portion of the black matrix 17 located between two adjacent sub-pixel groups P11 is arranged in the same layer as the first material layer 15 and the second material layer 16, crosstalk can be prevented between the light emitted from the first material layer 15 between the two adjacent sub-pixel groups P11, and crosstalk can be prevented between the light emitted from the second material layer 16 between the two adjacent sub-pixel groups P11. Figure 1H and Figure 1I As shown, the remaining portion includes a first portion 172 disposed between the first material layer 15 and / or the second material layer 16 included in two adjacent sub-pixels P in the same sub-pixel group P11, and a second portion 173 disposed on a circuit trace between the light-emitting element 13 and the pixel driving circuit 100 included in two adjacent sub-pixels P in the same sub-pixel group P11, wherein, when the first portion 172 and the first material layer 15 included in the two adjacent sub-pixels P in the same sub-pixel group P11 are disposed in the same layer, the first portion 172 can prevent crosstalk between the light emitted from the first material layer 15 included in the two adjacent sub-pixels P in the same sub-pixel group P11, and when the first portion 172 and the second material layer 16 included in the two adjacent sub-pixels P in the same sub-pixel group P11 are disposed in the same layer, In this case, the first portion 172 can prevent crosstalk from occurring between the light emitted from the second material layer 16 contained in two adjacent sub-pixels P in the same sub-pixel group P11. In the case where the first portion 172 is arranged on the same layer as the first material layer 15 and the second material layer 16 contained in two adjacent sub-pixels P arranged in the same sub-pixel group P11, the first portion 172 can prevent crosstalk from occurring between the light emitted from the first material layer 15 contained in two adjacent sub-pixels P in the same sub-pixel group P11, and can prevent crosstalk from occurring between the light emitted from the second material layer 16 contained in two adjacent sub-pixels P in the same sub-pixel group P11. The second portion 173 can cover the circuit routing between the light-emitting element 13 contained in the two adjacent sub-pixels P arranged in the same sub-pixel group P11 and the pixel driving circuit 100.

[0163] In this case, the black matrix 17 can also cover the pixel driving circuit 100 , which will not be described in detail here.

[0164] In some embodiments, as Figure 1I and Figure 1J As shown, the second portion 173 is disposed on a side of the light emitting element 13 away from the first material layer 15 .

[0165] In these embodiments, Figure 1I and Figure 1J As shown, the second portion 173 can be provided in the same layer as the reflective layer 134 in the light emitting element 13 and cover the electrical connection line (such as a copper wire) between the second electrode 132 of the light emitting element 13 and the pixel driving circuit 100 .

[0166] In some embodiments, as Figure 1I and Figure 1J As shown, the first light extraction layer 14 includes a lens structure 141 and a grating structure 142 disposed on the side of the lens structure 141 away from the light-emitting element 13. The surface of the grating structure 142 away from the light-emitting element 13 is a first surface 14a. The lens structure 141 is configured to collimate the light emitted by the light-emitting element 13, and the grating structure 142 is configured to deflect the light emitted by the lens structure 141 so that the light emitted by the light-emitting element 13 is deflected at a predetermined angle into the first material layer 15.

[0167] An optical device composed of a large number of parallel slits of equal width and spacing is called a grating. The grating structure 141 can be formed on the first material layer 15. For example, a large number of parallel grooves can be engraved on the first material layer 15. The grooves are opaque, while the smooth area between the grooves is translucent and acts as a slit, thus forming the grating structure 141. Alternatively, the grating structure 141 can be obtained by forming multiple slits in a metal sheet.

[0168] Monochromatic parallel light passes through the diffraction of each slit of the grating and the interference between the slits, forming a pattern with very wide dark stripes and very thin bright stripes. These sharp and bright stripes are called spectral lines.

[0169] The positions of the spectral lines generated by the diffraction grating on the screen (here, the first material layer 15) can be expressed by the formula Indicated by. Where a represents the slit width, b represents the slit spacing, is the diffraction angle, θ is the angle between the incident direction of light and the normal to the grating plane, k is the bright fringe spectrum order (k = 0, ±1, ±2...), λ is the wavelength, (a+b) can be expressed by d, which is called the grating constant.

[0170] From the grating equation It can be seen that for the same spectral order k, the mixed light composed of different wavelengths such as λ1, λ2, λ2... projected onto the grating at the same incident angle θ, the interference maximum generated by each wavelength is located at a different angular position, that is, the diffracted light of different wavelengths is diffracted at different angles. Shoot.

[0171] In this way, when λ is constant, by adjusting the parameters of the grating structure 142 such as the grating constant d, duty cycle, etc., when the spectral order k and the incident angle θ are constant, light with a wavelength of λ can be incident into the first material layer 15 at a certain angle (i.e., a preset angle).

[0172] In some embodiments, the duty cycle of the grating structure 142 is 0.4 to 0.6. For example, if the grating structure 142 is a transmission grating, the duty cycle is the ratio of the area of ​​the light-transmitting portion to the area of ​​the non-light-transmitting portion. This duty cycle is more conducive to fabricating the grating structure 142.

[0173] In some embodiments, the grating structure 142 is a zero-order grating, a tilted grating, or a blazed grating.

[0174] A zero-order-eliminating grating, which eliminates the zeroth-order diffraction point, is the most traditional grating structure. 141 Slanted gratings are widely used due to their high efficiency in specific diffraction orders. A blazed grating, also known as an echelon grating, is a specific reflective or transmissive diffraction grating structure that maximizes diffraction efficiency in a specific diffraction order.

[0175] In some embodiments, as Figure 1L As shown, when the grating structure 142 is a zero-order grating, the grating constant d of the grating structure 142 is 410 nm, and the thickness D of the grating structure 142 is 280 nm.

[0176] Taking the substrate 11 as glass as an example, when the substrate 11 serves as the first material layer 15, based on the refractive index of the substrate 11 and the refractive index of air, it can be known that the minimum incident angle (i.e., the preset angle) for achieving total reflection of the light emitted by the light-emitting element 13 at the interface between the second surface 15a of the first material layer 15 and the dielectric layer located on the side of the first material layer 15 away from the second material layer 16, and the light entering the second material layer 16 at the interface between the second material layer 16 and the dielectric layer located on the side of the second material layer 16 away from the first material layer 15 is 36 degrees. Through simulation, it can be obtained that when the grating structure is a zero-order grating, the thickness D of the grating 142 is 280nm, and the grating constant is 410nm, the ±1st order diffraction efficiency reaches the maximum at an incident angle (i.e., the preset angle) of 40 degrees, which are 33% respectively, and the overall diffraction efficiency (i.e., the sum of the diffraction efficiencies of all orders) can reach 66%.

[0177] In some embodiments, as Figure 1M As shown, when the grating structure 142 is a tilted grating, the grating constant of the tilted grating is 410 nm, the thickness is 450 nm, and the tilt angle is 20 degrees.

[0178] In these embodiments, through simulation, it can be obtained that when the grating structure is a tilted grating, the thickness of the grating structure is 450nm, the grating constant is 410nm, and the tilt angle is 20 degrees, its diffraction efficiency reaches a maximum of about 62%.

[0179] In other embodiments, Figure 1N As shown, when the grating structure 142 is a blazed grating, the grating constant of the blazed grating is 480 nm and the blaze angle is 35 degrees.

[0180] The grating constant is a step period. For example, if a step period is 4 steps, the grating constant is the size of the 4 steps along the arrangement direction of the steps. The blaze angle is the slope of the step (such as Figure 1N The angle between the plane perpendicular to the paper direction where the line connecting the vertices of the steps shown is located and the plane where the grating structure 142 is located can be adjusted by selecting the blaze angle, thereby adjusting the diffraction angle of light of a specific order, thereby adjusting the incident angle of the light (that is, the preset angle).

[0181] Through simulation, it is found that when the first-order diffraction angle (that is, the diffraction angle of the first-order light) is 70 degrees, d = 0.48um can be obtained. At this time, the blaze angle is about 35 degrees. The grating structure 142 is a blazed grating. Compared with the grating structure 142 being a zero-order grating and a tilted grating, the diffraction efficiency is lower.

[0182] In some embodiments, as Figure 1I and Figure 1J As shown, the refractive index of the lens structure 141 is 1.4-1.5, the arch height h of the lens structure 141 is 1 / 3 of the aperture w of the lens structure 141, and the spacing G between the lens structure 141 and the grating structure 142 is greater than or equal to 0 nm and less than or equal to 200 nm.

[0183] In which, the spacing G between the lens structure 141 and the grating structure 142 is the distance between the lowest point of the lens structure 141 (i.e., the lowest point of the arch) and the highest point of the grating structure 412 (i.e., the point on the grating structure 412 with the largest vertical distance from the third surface 15b of the first material layer 15). When the spacing G between the lens structure 141 and the grating structure 142 is equal to 0 nm, the lens structure 141 and the grating structure 142 are in contact.

[0184] In these embodiments, the lens structure 141 is used to collimate and focus the Lambertian distributed light emitted by the LED to a certain extent, and has good collimation and focusing effects on the light within the range of plus or minus 60 degrees relative to the normal of the light-emitting surface.

[0185] In some embodiments, as Figure 1O As shown, the light emitting substrate 1 further includes: a transparent material layer 143 filled between the grating structure 142 and the lens structure 141 , and the refractive index of the transparent material layer 143 is 1.2-1.3.

[0186] In these embodiments, the transparent material layer 143 can function as a fixed lens structure 141. By selecting a transparent material layer with a refractive index of 1.2 to 1.3, which is relatively low, the refractive index of the transparent material layer 143 is close to the refractive index of a vacuum (approximately 1), thereby enabling the parameters of the grating structure 142 to be utilized to achieve a good deflection effect. In other words, the grating structure 142 obtained by the above simulation can be utilized to maintain a high diffraction efficiency.

[0187] In some embodiments, the light-emitting substrate 1 further includes a filter film and / or an anti-reflection film. The filter film and / or anti-reflection film is disposed on the side of the second material layer 16 facing the second surface 15a. The filter film includes a filter unit disposed in the region where each sub-pixel P is located. The filter unit is configured to allow light of a first wavelength to pass through and absorb light of a second wavelength. The first wavelength is light emitted by the sub-pixel in the region where the filter unit is located, and the second wavelength is light in the remaining wavelength bands within the visible light band except the first wavelength.

[0188] For example, taking the light-emitting substrate 1 including a red sub-pixel R, a green sub-pixel G and a blue sub-pixel B as an example, the filter film may include a filter unit located in the area where the red sub-pixel R is located, a filter unit located in the area where the green sub-pixel G is located, and a filter unit located in the area where the blue sub-pixel B is located, and the filter unit located in the area where the red sub-pixel R is located may be a red filter unit, the filter unit located in the area where the green sub-pixel G is located may be a green filter unit, and the filter unit located in the area where the blue sub-pixel is located may be a blue filter unit.

[0189] In these embodiments, the filter unit can reflect external light, thereby reducing the reflection of external light by the luminescent substrate 1. The anti-reflection film, also known as the anti-reflection film, can reduce or eliminate the reflected light on the surface of optical elements such as lenses and plane mirrors, thereby increasing the light transmittance of these elements. Here, the anti-reflection film can reduce the reflection of external light by the luminescent substrate, thereby improving the display and viewing effects, and avoiding external light from causing false excitation of quantum dot luminescent materials.

[0190] In some embodiments, the anti-reflection film may be a circular polarizer.

[0191] Some embodiments of the present disclosure provide a method for preparing a light-emitting substrate, comprising:

[0192] A pixel layer 12 is formed; the pixel layer 12 includes a plurality of sub-pixels P; each sub-pixel P includes a light-emitting element 13, a first light extraction layer 14 arranged on one side of a light-emitting surface 13a of the light-emitting element 13, a first material layer 15 arranged on one side of a first surface 14a of the first light extraction layer 14, and a second material layer 16 in contact with a second surface 15a of the first material layer 15, the light-emitting element 13 is configured to emit light of a first color, the first light extraction layer 14 is configured to deflect the light emitted by the light-emitting element 13 at a preset angle into the first material layer 15, and the first material layer 15 and the second material layer 16 are configured to allow the light deflected at the preset angle to be directed between the first material layer 15 and the second material layer 16. wherein the first surface 14a is the surface of the first light extraction layer 14 away from the light emitting element 13, and the second surface 15a is the surface of the first material layer 15 close to or away from the light emitting element 13; the plurality of sub-pixels P include at least one first sub-pixel P1, and at least the second material layer in the first material layer 15 and the second material layer 16 included in the at least one first sub-pixel P1 includes a first light conversion material, and the first light conversion material is configured to absorb light propagating in the first material layer 15 and the second material layer 16 included in the first reference sub-pixel, and convert the absorbed light into light of a second color for output, and the first reference sub-pixel is the first sub-pixel P1 to which the first light conversion material belongs.

[0193] In some embodiments, the light-emitting substrate further includes a base 11, on which a pixel driving circuit 100 is disposed. The base 11 serves as the first material layer 15, and forming the pixel layer 12 includes the steps of forming a first light extraction layer 14 on the base 11, forming a second material layer 16 on the base 11, and forming a plurality of light-emitting elements 13 on the base 11. Alternatively, the second surface 15a is the surface of the first material layer 15 close to the light-emitting elements, and the base is disposed on a side of the first material layer 15 away from the light-emitting elements 13. Forming the pixel layer 12 includes the steps of forming the first material layer 15 on the base 11, forming the first light extraction layer 14 on the base 11, forming the second material layer 16 on the base 11, and forming a plurality of light-emitting elements 13 on the base 11.

[0194] In some embodiments, forming the first material layer 15 on the substrate 11 may include forming the first material layer 15 by printing, photolithography, or a printing process. The first material layer 15 may include, for example, a transparent substrate layer and a first light-converting material dispersed in the transparent substrate layer, or the first material layer 15 may include only the transparent substrate layer.

[0195] Forming the second material layer 16 on the substrate may include: forming the second material layer 16 by printing, photolithography or printing. The second material layer 16 may include a transparent substrate layer and the first light conversion material dispersed in the transparent substrate layer, or the second material layer 16 may include only the transparent substrate layer.

[0196] In some embodiments, the first light extraction layer 14 includes a lens structure 141 and a grating structure 142 disposed on a side of the lens structure 141 away from the light emitting element 13. The first light extraction layer 14 is formed on the substrate 11 and may include:

[0197] A grating structure 142 is formed on the substrate 11 .

[0198] For example, the grating structure 142 may be formed on the substrate 11 by nanoimprinting, and the material of the grating structure 142 may be a metal material.

[0199] The lens structure 141 is formed on the substrate 11 on which the grating structure 142 is formed.

[0200] At this time, there are two possible situations. In the first situation, there is no filling between the lens structure 141 and the grating structure 142. In this situation, when the light-emitting element 13 is a first light-emitting diode, the lens structure 141 is formed on the substrate 11 on which the grating structure 142 is formed, including:

[0201] Before transferring the plurality of first LEDs onto the substrate 11 , a lens structure 141 is formed on one side of the light emitting surface of the plurality of first LEDs, and while transferring the plurality of first LEDs onto the substrate 11 , the lens structure 141 is transferred onto the substrate 11 .

[0202] In the second case, a transparent material layer 143 is filled between the lens structure 141 and the grating structure 142. In this case, the lens structure 141 is formed on the substrate 11 on which the grating structure 142 is formed, including:

[0203] Before transferring the plurality of first light-emitting diodes onto the substrate 11, a transparent material layer 143 is formed on the substrate 11 in the area where the grating structure 142 is located, and a lens structure 141 is formed by embossing on a side of the transparent material layer 143 away from the grating structure 142, wherein the refractive index of the transparent material layer 143 is 1.2 to 1.3.

[0204] In these embodiments, the transparent material layer 143 may be a transparent adhesive (such as optically clear adhesive (OCA)), and the lens structure 141 may be formed on a side of the transparent material layer away from the grating structure 142 by roller printing.

[0205] In some embodiments, the plurality of sub-pixels P further include at least one second sub-pixel P2, the light-emitting substrate 1 includes a plurality of pixel regions Q, the plurality of sub-pixels P form at least one sub-pixel group P11, the sub-pixel group P11 is located in one pixel region Q, and the sub-pixel group P11 includes at least one first sub-pixel P1 and at least one second sub-pixel P2; in the sub-pixel group P11, the light-emitting elements 13 included in the plurality of sub-pixels P are all first light-emitting diodes, and the light-emitting elements 13 included in the plurality of sub-pixels P have the same light-emitting color, the first light-emitting diode includes a first electrode 131 and a second electrode 132, and a semiconductor layer 133 disposed between the first electrode 131 and the second electrode 132, and the light-emitting elements 13 included in the plurality of sub-pixels P share the same first electrode 131; the step of forming the plurality of light-emitting elements 13 on the substrate 11 includes:

[0206] S1. Produce multiple second light-emitting diodes, each of which includes multiple first light-emitting diodes, and the multiple first light-emitting diodes include a first electrode 131, a second electrode 132, and a semiconductor layer 133 formed between the first electrode 131 and the second electrode 132, and the multiple first light-emitting diodes share the same first electrode 131.

[0207] Here, take the first light emitting diode as a vertical LED as an example. Figures 1P to 1S As shown, making a plurality of second light emitting diodes may include:

[0208] S11, such as Figure 1P As shown, a semiconductor film 200 is formed on sapphire by an epitaxial process.

[0209] The semiconductor film 200 may include an N-type gallium nitride film, a P-type gallium nitride film, and a quantum hydrazine film.

[0210] Of course, a buffer layer 300 may be formed on the sapphire.

[0211] S12, such as Figure 1P As shown, the portion of the semiconductor film 200 located in the area where each second light-emitting diode is located is cut, and the portion of the P-type gallium nitride film and the quantum hydrazine film contained in the semiconductor film 200 located in the area where each second light-emitting diode is located is divided into multiple semiconductor parts, each semiconductor part belongs to a first light-emitting diode.

[0212] Taking the area where each second light-emitting diode is located as a rectangular area and each sub-pixel group P11 includes four light-emitting elements 13 as an example, cutting the portion of the P-type gallium nitride film and the quantum hydrazine film included in the semiconductor film located in the area where each second light-emitting diode is located may include:

[0213] The portion of the semiconductor film 200 located in the area where each second light emitting diode is located is divided into a plurality of areas. For example, a rectangular area can be divided into four small rectangular areas.

[0214] The portions of the P-type gallium nitride film and the quantum hydrazine film included in the semiconductor film 200 located between multiple regions are cut so that the P-type gallium nitride film and the quantum hydrazine film included in the semiconductor film are disconnected between the multiple regions, thereby obtaining the semiconductor portion belonging to each first light-emitting diode.

[0215] For example, the P-type gallium nitride film and the quantum hydrazine film included in the semiconductor film 200 can be etched using an ICP (Inductively Coupled Plasma) etching process to cut portions of the P-type gallium nitride film and the quantum hydrazine film included in the semiconductor film 200 between multiple regions. In this process, a mixed gas mainly composed of SiCl4 is used to etch the gallium nitride, and the etching process involves both a physical process and a chemical reaction.

[0216] S13, such as Figure 1Q As shown, a second electrode 132 is formed on each semiconductor portion through a patterning process, and a first electrode is formed on the portion of the N-type gallium nitride thin film included in the semiconductor film 200 located in the region where each second light-emitting diode is located.

[0217] Among them, the first electrode 131 can be exemplified as an N-Pad, that is, a first pad, and the second electrode 132 can be a transparent electrode. At this time, a pin can be formed on the N-type gallium nitride film and electrically connected to the first pad through the pin. Each first light-emitting diode also includes a second pad (such as a P-Pad) connected to the second electrode 132, and the second pad can be electrically connected to the second electrode 132 through an electrical connection line.

[0218] In the case where the first electrode 131 is closer to the first material layer 15 than the second electrode 132,

[0219] By patterning, a second electrode 132 is formed on each semiconductor portion, and a first electrode 131 is formed on a portion of the N-type gallium nitride film included in the semiconductor film located in the region where each second light-emitting diode is located. This may include: Figure 1Q As shown, first, a second electrode 132 is formed on the side of the semiconductor layer 133 away from the sapphire, and an electrical connection line is formed between the second electrode 132 and the second pad, and a lead is formed on the portion of the N-type gallium nitride film located in the area where each second light-emitting diode is located. Then, as shown in FIG. Figure 1RAs shown, the sapphire is peeled off and a temporary substrate 10 is formed on the side of the second electrode 132 away from the semiconductor layer 133 (for example, the temporary substrate 10 can be adhered to the side of the second electrode 132 away from the semiconductor layer 133 through the adhesive layer 30 and the debonding layer 20). Then, with the support of the temporary substrate 10, a first electrode 131 (also known as a first pad) is formed on the side of the semiconductor layer 133 away from the temporary substrate 10. The first electrode 131 is connected to the pin, thereby achieving electrical connection between the portion of the N-type gallium nitride thin film located in the area where each second light-emitting diode is located and the first electrode 131. In this process, a second pad can also be formed at the same time, and the second pad is electrically connected to the electrical connection line.

[0220] S14, such as Figure 1S As shown, the structure formed with the first electrode 131 and the second electrode 132 is cut into a plurality of second light emitting diodes.

[0221] The portion of the structure where the first electrode 131 and the second electrode 132 are formed and located between the regions where the plurality of second light emitting diodes are located may be cut to obtain the plurality of second light emitting diodes.

[0222] In the process of forming the first electrode 131 and the second electrode 132 in each semiconductor layer 133 through the patterning process, in order to improve the utilization rate of the light of the light emitting element 13, as shown in FIG. Figure 1Q As shown, before stripping the sapphire, a reflective film 400 may be formed on a side of the second electrode 132 away from the semiconductor layer 133 .

[0223] The reflective layer 134 may be fixed to a side of the second electrode 132 away from the semiconductor layer 133 by optical adhesive (OCA).

[0224] S2. Transferring a plurality of first light-emitting diodes onto the substrate 11, and electrically connecting the first light-emitting diodes included in each second light-emitting diode to the pixel driving circuit 100 on the substrate 11 through the first electrode 131 and the respective second electrode 132.

[0225] That is, if Figure 1T As shown, after the first light emitting diodes are transferred to the substrate 11, the plurality of first light emitting diodes can be electrically connected to the pixel driving circuit through the first pad (N-Pad) and the second pad (P-Pad).

[0226] After the first light-emitting diodes are transferred onto the substrate 11 , the reflective film 400 may be patterned to obtain a reflective layer 134 . The reflective layer 134 at least covers the region where the light-emitting surfaces of the plurality of first light-emitting diodes are located.

[0227] The above description is merely a specific embodiment of the present disclosure, but the scope of protection of the present disclosure is not limited thereto. Any changes or substitutions that a person skilled in the art can conceive within the technical scope disclosed in the present disclosure should be included within the scope of protection of the present disclosure. Therefore, the scope of protection of the present disclosure should be based on the scope of protection of the claims.

Claims

1. A light-emitting substrate, characterized in that: include: a pixel layer, the pixel layer including a plurality of sub-pixels; Each sub-pixel includes a light-emitting element, a first light extraction layer disposed on a light-emitting surface side of the light-emitting element, a first material layer disposed on a first surface side of the first light extraction layer, and a second material layer in contact with a second surface of the first material layer. The light-emitting element is configured to emit light of a first color. The first light extraction layer is configured to deflect the light emitted by the light-emitting element at a preset angle into the first material layer. The first material layer and the second material layer are configured to allow the light deflected at the preset angle to propagate in the first material layer and the second material layer. The first light extraction layer includes a lens structure and a grating structure provided on a side of the lens structure away from the light-emitting element, wherein the surface of the grating structure away from the light-emitting element is the first surface; the lens structure is configured to collimate the light emitted by the light-emitting element, and the grating structure is configured to deflect the light emitted by the lens structure, so as to deflect the light emitted by the light-emitting element into the first material layer at the preset angle; The second surface is a surface of the first material layer close to or far away from the light-emitting element; The multiple sub-pixels include at least one first sub-pixel, and at least the second material layer of the first material layer and the second material layer included in the at least one first sub-pixel includes a first light-conversion material. The first light-conversion material is configured to absorb light propagating in the first material layer and the second material layer included in the first reference sub-pixel, and convert the absorbed light into light of a second color for output. The first reference sub-pixel is the first sub-pixel to which the first light-conversion material belongs.

2. The light-emitting substrate according to claim 1, wherein In the case where the second surface is the surface of the first material layer close to the light-emitting element, the area of ​​the orthographic projection of the first material layer on the plane where the pixel layer is located is larger than the area of ​​the orthographic projection of the first light extraction layer on the plane where the pixel layer is located, and the portion of the surface of the first material layer facing the light-emitting element that exceeds the area where the first light extraction layer is located forms the second surface; In the case where the second surface is the surface of the first material layer away from the light-emitting element, the area of ​​the orthographic projection of the first material layer on the substrate is greater than or equal to the area of ​​the orthographic projection of the first light extraction layer on the substrate, and the surface of the first material layer away from the light-emitting element forms the second surface.

3. The light-emitting substrate according to claim 1 or 2, characterized in that: Also includes: substrate; The substrate serves as the first material layer; or, The second surface is a surface of the first material layer close to the light emitting element. The substrate is disposed on a side of the first material layer away from the light emitting element and in contact with the first material layer.

4. The light-emitting substrate according to any one of claims 1 to 3, characterized in that The surface of the first material layer away from the second material layer and the third surface reflect the reference light so that the light deflected into the first material layer at a preset angle propagates in the first material layer and the second material layer, wherein the third surface is the surface of the second material layer away from the first material layer, and the reference light is deflected into the first material layer at a preset angle and enters the first material layer and the second material layer during the propagation process.

5. The light-emitting substrate according to any one of claims 1 to 4, characterized in that The plurality of subpixels further include at least one second subpixel, wherein at least the second material layer of the first material layer and the second material layer included in the at least one second subpixel includes a second light-conversion material, and the second light-conversion material is configured to absorb light propagating through the first material layer and the second material layer included in a second reference subpixel, and convert the absorbed light into light of a third color for emission. Alternatively, at least the second material layer of the first material layer and the second material layer included in the at least one second subpixel includes first scattering particles, and the first scattering particles are configured to scatter light propagating through the first material layer and the second material layer included in a second reference subpixel. The second reference subpixel is the second subpixel to which the second light-conversion material or the first scattering particles belong. The light-emitting substrate includes a plurality of pixel areas, the plurality of sub-pixels form at least one sub-pixel group, the sub-pixel group is located in one pixel area, the sub-pixel group includes a plurality of sub-pixels, and the plurality of sub-pixels included in the sub-pixel group include at least one first sub-pixel and at least one second sub-pixel; In the sub-pixel group, the light-emitting elements included in the multiple sub-pixels are all first light-emitting diodes, and the light-emitting colors of the light-emitting elements included in the multiple sub-pixels are the same. The first light-emitting diode includes a first electrode and a second electrode, and a semiconductor layer arranged between the first electrode and the second electrode. The light-emitting elements included in the multiple sub-pixels share the same first electrode.

6. The light-emitting substrate according to claim 5, characterized in that The first light emitting diode is a vertical LED, and the first electrode is closer to the first material layer than the second electrode.

7. The light-emitting substrate according to claim 5 or 6, characterized in that: In the sub-pixel group, the area of ​​the orthographic projection of the first material layer contained in the multiple sub-pixels on the plane where the pixel layer is located is larger than the area of ​​the orthographic projection of the first light extraction layer contained in each sub-pixel on the plane where the pixel layer is located, and the orthographic projection of the first material layer contained in the multiple sub-pixels on the plane where the pixel layer is located exceeds the part of the area where the first light extraction layer contained in the multiple sub-pixels is located, and surrounds the area where the light-emitting elements contained in the multiple sub-pixels are located.

8. The light-emitting substrate according to any one of claims 5 to 7, wherein: The first light emitting diode further includes a reflective layer, which is arranged on a side of the first light emitting diode away from the light emitting surface and at least covers the area where the light emitting surface of the first light emitting diode is located.

9. The light-emitting substrate according to any one of claims 5 to 8, characterized in that: The subpixel group further includes at least one third subpixel, wherein at least the second material layer of the first material layer and the second material layer included in the at least one third subpixel includes a third light-conversion material, and the third light-conversion material is configured to absorb light propagating through the first material layer and the second material layer included in a third reference subpixel, and convert the absorbed light into light of a fourth color for output. Alternatively, at least the second material layer of the first material layer and the second material layer included in the at least one third subpixel includes second scattering particles, and the second scattering particles are configured to scatter light propagating through the first material layer and the second material layer included in the third reference subpixel. The third reference subpixel is the third subpixel to which the third light-conversion material or the second scattering particles belong. Wherein, the second color, the third color and the fourth color are three primary colors; Alternatively, the second color, the first color and the fourth color are three primary colors; Alternatively, the second color, the third color and the first color are three primary colors.

10. The light emitting substrate according to claim 9, wherein The first subpixel, the second subpixel, and the third subpixel are respectively a red subpixel, a green subpixel, and a blue subpixel; in the subpixel group, an area of ​​the at least one first subpixel and an area of ​​the at least one third subpixel are both smaller than an area of ​​the at least one second subpixel, and an area of ​​the at least one first subpixel is substantially equal to an area of ​​the at least one third subpixel; Alternatively, the first sub-pixel, the second sub-pixel and the third sub-pixel are respectively a red sub-pixel, a blue sub-pixel and a green sub-pixel, the area of ​​the at least one first sub-pixel and the at least one second sub-pixel are both smaller than the area of ​​the at least one third sub-pixel, and the area of ​​the at least one first sub-pixel is roughly equivalent to the area of ​​the at least one second sub-pixel.

11. The light emitting substrate according to claim 9, wherein In the sub-pixel group, the number of red sub-pixels and blue sub-pixels is one each, the number of green sub-pixels is two, and the areas of one red sub-pixel, one blue sub-pixel, and one green sub-pixel are equal. The multiple sub-pixels contained in the sub-pixel group are arranged in an array form.

12. The light-emitting substrate according to claim 11, wherein In the sub-pixel group, two green sub-pixels are located in different rows and columns, respectively.

13. The light-emitting substrate according to any one of claims 3 to 12, wherein: Also includes: a black matrix, the black matrix being disposed between the plurality of sub-pixels; In the case where the substrate is the first material layer, at least a portion of the black matrix is ​​provided in the same layer as the second material layer and is in contact with the second material layers included in two adjacent sub-pixels; When the substrate is arranged on a side of the first material layer away from the light-emitting element, at least a portion of the black matrix is ​​arranged in the same layer as the first material layer and the second material layer, and is in contact with the second material layer and the first material layer included in two adjacent sub-pixels.

14. The light-emitting substrate according to claim 13, wherein: In the case where the base serves as the first material layer, the light-emitting substrate further comprises a second light extraction layer and a light absorption pattern, wherein the second light extraction layer and the light absorption pattern are both arranged at positions corresponding to the reference pattern, and are both located on a side of the first material layer away from the reference pattern, the second light extraction layer is configured to extract light propagating in the first material layer in the form of total reflection toward a side away from the first material layer, and the light absorption pattern is arranged on a side of the second light extraction layer away from the first material layer and in contact with the second light extraction layer; The reference pattern is a portion of the black matrix that is disposed in the same layer as the second material layer.

15. The light emitting substrate according to claim 14, wherein: The plurality of sub-pixels at least form a sub-pixel group; When the second surface is the surface of the first material layer close to the light-emitting element, and in the sub-pixel group, the positive projection of the first material layer included in the multiple sub-pixels on the plane where the pixel layer is located exceeds the area where the first light extraction layer included in the multiple sub-pixels is located and surrounds the area where the light-emitting elements included in the multiple sub-pixels are located, a pixel driving circuit is also provided on the substrate, and the part of the black matrix located between two adjacent sub-pixel groups is arranged in the same layer as the first material layer and / or the second material layer, and the remaining part includes a first part arranged between the first material layer and / or the second material layer included in two adjacent sub-pixels in the same sub-pixel group, and a second part arranged on the circuit trace between the light-emitting elements included in two adjacent sub-pixels in the same sub-pixel group and the pixel driving circuit.

16. The light-emitting substrate according to claim 15, characterized in that The second portion is disposed on a side of the light emitting element away from the first material layer.

17. The light-emitting substrate according to claim 1, wherein The refractive index of the lens structure is 1.2-1.4, the arch height of the lens structure is 1 / 3 of the aperture of the lens structure, and the spacing between the lens structure and the grating structure is greater than or equal to 0 nm and less than or equal to 200 nm.

18. The light-emitting substrate according to claim 17, wherein: The duty cycle of the grating structure is 0.4-0.

6.

19. The light-emitting substrate according to claim 17 or 18, characterized in that: The grating structure is a zero-order grating, a tilted grating or a blazed grating.

20. The light emitting substrate according to claim 19, wherein In the case where the grating structure is a zero-order grating, the grating constant of the grating structure is 410 nm and the thickness is 280 nm; In the case where the grating structure is a tilted grating, the grating constant of the grating structure is 410 nm, the thickness is 450 nm, and the tilt angle is 20 degrees; When the grating structure is a blazed grating, the grating constant of the blazed grating is 480 nm and the blaze angle is 35 degrees.

21. The light-emitting substrate according to any one of claims 17 to 20, characterized in that The light-emitting substrate further includes a transparent material layer filled between the grating and the lens structure, and the refractive index of the transparent material layer is 1.2-1.

3.

22. The light-emitting substrate according to any one of claims 1 to 21, characterized in that: Also includes: Filter and / or anti-reflection coatings; The filter film and / or the anti-reflection film is arranged on a side of the second material layer facing the second surface; The filter film includes a filter unit arranged in the area where each sub-pixel is located, and the filter unit is configured to allow light of a first wavelength to pass through and absorb light of a second wavelength. The light of the first wavelength is the light emitted by the sub-pixel in the area where the filter unit is located, and the light of the second wavelength is the light in the remaining bands within the visible light band except the first wavelength.

23. A light emitting device, characterized in that: include: The light-emitting substrate according to any one of claims 1 to 22.

24. A method for preparing a light-emitting substrate, characterized in that: include: forming a pixel layer; the pixel layer comprising a plurality of sub-pixels; Each sub-pixel includes a light-emitting element, a first light extraction layer disposed on a light-emitting surface side of the light-emitting element, a first material layer disposed on a first surface side of the first light extraction layer, and a second material layer in contact with a second surface of the first material layer. The light-emitting element is configured to emit light of a first color. The first light extraction layer is configured to deflect the light emitted by the light-emitting element at a preset angle into the first material layer. The first material layer and the second material layer are configured to allow the light deflected at the preset angle to propagate in the first material layer and the second material layer. The first light extraction layer includes a lens structure and a grating structure provided on a side of the lens structure away from the light-emitting element, wherein the surface of the grating structure away from the light-emitting element is the first surface; the lens structure is configured to collimate the light emitted by the light-emitting element, and the grating structure is configured to deflect the light emitted by the lens structure, so as to deflect the light emitted by the light-emitting element into the first material layer at the preset angle; The second surface is a surface of the first material layer close to or far away from the light-emitting element; The multiple sub-pixels include at least one first sub-pixel, and at least the second material layer of the first material layer and the second material layer included in the at least one first sub-pixel includes a first light-conversion material. The first light-conversion material is configured to absorb light propagating in the first material layer and the second material layer included in the first reference sub-pixel, and convert the absorbed light into light of a second color for output. The first reference sub-pixel is the first sub-pixel to which the first light-conversion material belongs.

25. The method for preparing a light-emitting substrate according to claim 24, wherein: The light-emitting substrate further comprises: a base; The substrate is used as the first material layer, and the pixel layer is formed, including: forming a first light extraction layer on the substrate, forming a second material layer on the substrate, and forming the plurality of light-emitting elements on the substrate; or, The second surface is a surface of the first material layer close to the light-emitting element, and the substrate is provided on a side of the first material layer away from the light-emitting element. The forming of the pixel layer includes: The steps of forming the first material layer on the substrate, forming the first light extraction layer on the substrate, forming the second material layer on the substrate, and forming the plurality of light emitting elements on the substrate.

26. The method for preparing a light-emitting substrate according to claim 25, wherein: A pixel driving circuit is further provided on the substrate, and the plurality of sub-pixels further include at least one second sub-pixel. The light-emitting substrate includes a plurality of pixel regions, the plurality of sub-pixels form at least one sub-pixel group, the sub-pixel group is located in one pixel region, and the sub-pixel group includes at least one first sub-pixel and at least one second sub-pixel. In the sub-pixel group, the light-emitting elements included in the plurality of sub-pixels are all first light-emitting diodes, and the light-emitting colors of the light-emitting elements included in the plurality of sub-pixels are the same. The first light-emitting diode includes a first electrode and a second electrode, and a semiconductor layer provided between the first electrode and the second electrode. The light-emitting elements included in the plurality of sub-pixels share the same first electrode. The step of forming the plurality of light-emitting elements on the substrate comprises: Manufacturing a plurality of second light-emitting diodes, each of the second light-emitting diodes includes a plurality of first light-emitting diodes, the plurality of first light-emitting diodes include a first electrode, a second electrode, and a semiconductor layer formed between the first electrode and the second electrode, and the plurality of first light-emitting diodes share the same first electrode; The plurality of first light emitting diodes are transferred onto a substrate, and the first light emitting diodes included in each second light emitting diode are electrically connected to the pixel driving circuit through the first electrode and respective second electrodes.

27. The method for preparing a light-emitting substrate according to claim 25 or 26, wherein: The light emitting element is a first light emitting diode; The step of forming the first light extraction layer on the substrate comprises: forming the grating structure on the substrate; Before transferring the plurality of first light-emitting diodes onto the substrate, forming the lens structure on one side of the light-emitting surface of each first light-emitting diode; and simultaneously transferring the plurality of first light-emitting diodes onto the substrate, transferring the lens structure onto the substrate; or, Before transferring the multiple first light-emitting diodes to the substrate, a transparent material layer is formed on the substrate and located in the area where the grating structure is located, and the lens structure is formed by embossing on a side of the transparent material layer away from the grating structure, wherein the refractive index of the transparent material layer is 1.2~1.3.

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