A graphite disk

By setting multiple protrusions on the groove bottom wall of the graphite disk to divide them into independent areas, the problem of poor uniformity of the epitaxial sheet, especially the problem of thick edges, is solved, and better gas circulation and heat distribution are achieved, and the uniformity and fixing effect of the epitaxial sheet are improved.

CN116368604BActive Publication Date: 2025-08-08ENKRIS SEMICON
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Patent Information

Application Number
CN202080106823.6
Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Filing Date
2020-11-12
Publication Date
2025-08-08
Estimated Expiration
2040-11-12

AI Technical Summary

Technical Problem

In the prior art, when using graphite disks for epitaxial growth of materials, the performance uniformity of the epitaxial sheet is poor, especially due to the problem of thick edges caused by airflow.

Method used

A graphite disk is designed, and a plurality of protrusions are arranged on the bottom wall of the groove to divide them into multiple independent areas, each area corresponding to a substrate, and an interworking gas circulation space is defined in the groove through the protrusions, thereby increasing the gas circulation space to alleviate the problem of edge thickness caused by the air flow.

Benefits of technology

The uniformity of the epitaxial sheet is improved, the substrate is fixed firmly, the preparation process is simplified, the probability of unstable air flow is reduced, the gas circulation space is increased, and the heat distribution uniformity is improved.

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Abstract

This application provides a graphite disk to address the problem of poor performance uniformity in epitaxial wafers obtained when using graphite disks for material epitaxial growth in the prior art. The graphite disk comprises a main body, which includes a groove and multiple protrusions located on the bottom wall of the groove. The multiple protrusions divide the groove into multiple independent regions. The graphite disk provided by this application uses the protrusions to define multiple regions within the groove, each corresponding to a substrate. The different regions are interconnected. Compared to the prior art graphite disk structure in which one groove corresponds to one substrate, this increases the gas flow space and alleviates the problem of thickened edges caused by airflow.
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Description

Technical Field

[0001] The present application relates to the technical field of semiconductor material growth equipment, and in particular to a graphite disk. Background Art

[0002] A light-emitting diode (LED) is a solid-state semiconductor diode light-emitting device widely used in lighting applications such as indicator lights and display screens. Currently, LED wafers are primarily produced through metal-organic chemical vapor deposition (MOCVD). The process can be summarized as follows: a substrate is placed in a groove on a graphite plate, which is then placed in an MOCVD reaction chamber. The chamber is heated to a preset temperature, and organometallic compounds and Group V gases are introduced, causing them to break chemical bonds on the substrate and repolymerize to form the LED epitaxial layer.

[0003] However, the performance uniformity of the epitaxial wafer obtained according to the above process is poor, for example, the LED wavelength is uneven and the peripheral thickness is relatively thick. Summary of the Invention

[0004] In view of this, the present application provides a graphite disk to solve the problem of poor performance uniformity of epitaxial wafers obtained when using graphite disks for material epitaxial growth in the prior art.

[0005] The present application provides a graphite disk comprising a main body, the main body including a groove and multiple protrusions located on the bottom wall of the groove. The multiple protrusions divide the groove into multiple independent regions. The graphite disk provided by the present application uses the protrusions to define multiple regions within the groove, each corresponding to a substrate, and the different regions are interconnected. Compared to the prior art graphite disk structure in which one groove corresponds to one substrate, this increases the gas flow space and alleviates the problem of thickened edges caused by airflow.

[0006] In one possible implementation, the edge of the groove's orthographic projection onto the graphite disk body includes at least one arcuate segment. The sidewall corresponding to each arcuate segment and the at least one protrusion cooperate to form a region. This implementation, on the one hand, provides smooth sidewalls corresponding to the arcuate segments, minimizing the impact on airflow during graphite disk rotation; on the other hand, it improves the fit between the region and the substrate's wafer structure, ensuring a more secure substrate fixation.

[0007] In one possible implementation, the arc segment is a minor arc. In this implementation, the two endpoints of the arc segment can be used to limit the substrate within the region. Accordingly, the number of protrusions can be reduced, thereby increasing the hollow area between the protrusions, thereby increasing the air flow space, further alleviating the problem of edge thickening caused by airflow.

[0008] In one possible implementation, the edge of the groove's orthographic projection onto the graphite disk body includes multiple arc segments and a straight line segment between two adjacent arc segments. In this implementation, based on the principle that a straight line is the shortest distance between two points, connecting the two arc segments with a straight line can reduce the etching path during groove fabrication, thereby simplifying the fabrication process.

[0009] In one possible implementation, the edge of the groove's orthographic projection onto the graphite disk body includes multiple arcuate segments and a broken line segment located between two adjacent arcuate segments. In this implementation, by providing a broken line segment between two arcuate segments S, the groove's sidewall length can be extended. Since heat is transferred through the graphite disk body during epitaxial growth, extending the groove's sidewall increases the heat dissipation area, thereby preventing heat concentration and improving thermal uniformity across the substrate, ensuring uniformity in subsequently grown epitaxial wafers.

[0010] In one possible implementation, the sidewalls corresponding to each arc segment and the multiple protrusions cooperate to form an area, and the multiple protrusions that form the area are spaced apart from each other. In this implementation, the spaces between the protrusions can be used to form airflow channels, further reducing the probability of unstable airflow and thereby alleviating the problem of thick edges.

[0011] In a possible implementation, a distance between two adjacent protrusions among the multiple protrusions that enclose an area is ≥1 mm.

[0012] In one possible implementation, the multiple regions include a first region and a second region; the multiple protrusions include a shared protrusion; and the sidewalls of the first region and the sidewalls of the second region each include a shared protrusion. In this implementation, providing the shared protrusion can improve the utilization rate of the protrusions, thereby simplifying the process.

[0013] In a possible implementation, the protrusion is plate-shaped or column-shaped. The column-shaped or plate-shaped protrusion has a simple structure and is easy to prepare.

[0014] In one possible implementation, the protrusion includes a through hole that extends through the protrusion in a direction parallel to the bottom wall of the groove. In this implementation, by providing a through hole in the protrusion, the airflow channel can be increased, thereby further reducing the probability of unstable airflow, thereby alleviating the problem of thick edges.

[0015] In a possible implementation, the material of the protrusion is any one of SiC, quartz, sapphire and graphite.

[0016] In one possible implementation, the surfaces of the plurality of regions are convex or concave. In this implementation, the unevenness of the regional surfaces is configured to adapt to the bottom surface of the substrate to be epitaxially grown, thereby increasing the applicability of the graphite disk to the substrate.

[0017] The graphite disk provided in the embodiments of the present application utilizes protrusions to define multiple regions within the grooves. Each region corresponds to a substrate, and the different regions communicate with each other. Compared to conventional graphite disk structures in which one groove corresponds to one substrate, this increases the space for gas flow and alleviates the problem of thickened edges caused by airflow. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] Figure 1 This is a schematic structural diagram of the graphite disk provided in the first embodiment of the present application.

[0019] Figure 2 A schematic structural diagram of an area in a graphite disk provided in the first embodiment of the present application.

[0020] Figure 3 A schematic structural diagram of an area in a graphite disk provided in the second embodiment of the present application.

[0021] Figure 4 A schematic structural diagram of an area in a graphite disk provided in the third embodiment of the present application.

[0022] Figure 5 This is a schematic structural diagram of the graphite disk provided in the second embodiment of the present application.

[0023] Figure 6 This is a schematic structural diagram of the graphite disk provided in the third embodiment of the present application.

[0024] Figure 7 This is a schematic structural diagram of the graphite disk provided in the fourth embodiment of the present application. DETAILED DESCRIPTION

[0025] As described in the background, epitaxial wafers produced using graphite disks for epitaxial growth in the prior art suffer from poor uniformity. The inventors have discovered that this poor uniformity is due to at least one factor: when the graphite disk rotates at high speed, the airflow affects the substrate, causing it to grow thicker at the edges away from the center of the disk.

[0026] In view of this, the present application provides a graphite disk, which interconnects multiple areas on the graphite disk that correspond one to one with the substrate, thereby increasing the gas circulation space and alleviating the problem of thick edges caused by airflow.

[0027] The following will be combined with the drawings in the embodiments of this application to clearly and completely describe the technical solutions in the embodiments of this application. Obviously, the embodiments described are only part of the embodiments of this application, not all of the embodiments. Based on the embodiments in this application, all other embodiments obtained by ordinary technicians in this field without making creative efforts are within the scope of protection of this application.

[0028] Figure 1 This is a schematic diagram of the structure of the graphite disk provided in the first embodiment of this application. Figure 1 As shown, the graphite disk 10 includes a graphite disk body 11 , which includes a groove 12 and a plurality of protrusions 13 located on the bottom wall of the groove 12 . The plurality of protrusions 13 divide the groove 12 into a plurality of independent regions Q.

[0029] A groove 12 is provided on the bearing surface of the graphite disk body 11, and a plurality of protrusions 13 are provided on the bottom wall of the groove 12. In one embodiment, the height of the protrusion 13 is less than or equal to the depth of the groove. The material of the protrusion 13 includes any one of silicon carbide SiC, quartz, graphite and sapphire. The plurality of protrusions 13 divides the groove 12 into a plurality of regions Q, that is, the plurality of protrusions 13 serve as limiting structures between different regions Q. A region Q will subsequently correspond to a substrate to be epitaxially grown. The shape and structure of the groove 12 and the protrusion 13, as well as the arrangement relationship of the plurality of protrusions 13 can be reasonably set according to actual conditions. In one embodiment, the bottom surface of the plurality of regions Q is convex or concave. Such a setting is to adapt to the bottom surface of the substrate to be epitaxially grown, thereby improving the applicability of the graphite disk to the substrate.

[0030] The graphite disk provided in this embodiment utilizes protrusions 13 to define multiple regions Q within grooves 12. Each region Q corresponds to a substrate, and different regions Q are interconnected. Compared to conventional graphite disk structures in which one groove corresponds to one substrate, this increases the space for gas flow and alleviates the problem of thickened edges caused by airflow.

[0031] In one embodiment, Figure 1 As shown, the edge of the orthographic projection of groove 12 on graphite disk body 11 includes at least one arcuate segment S. The groove sidewall corresponding to each arcuate segment S and at least one protrusion 13 cooperate to form a region Q. In other words, each region Q is formed by a portion of the groove sidewall 12 and at least one protrusion 13. This has the advantages of, on the one hand, smoothing the groove sidewall surface corresponding to the arcuate segment S, thereby relatively minimizing the impact on airflow during graphite disk rotation; and, on the other hand, improving the fit between region Q and the substrate's wafer structure, ensuring a more secure substrate fixation.

[0032] In one embodiment, Figure 1As shown, the edge of the orthographic projection of groove 12 on graphite disk body 11 also includes a straight line segment D located between two adjacent arc segments S. This straight line segment D serves only as part of the sidewall of groove 12 and does not limit the substrate position, that is, it does not form the sidewall of region Q. Based on the principle that the shortest distance between two points is a straight line, using straight line segment D to connect the two arc segments S can reduce the etching path during the formation of groove 12, thereby simplifying the fabrication process.

[0033] In one embodiment, Figure 1 As shown, the straight line segment D is tangent to the arc segment S. In this case, the smoothness of the sidewall of the groove 12 is further improved, thereby avoiding affecting the airflow direction during the rotation process.

[0034] In one embodiment, Figure 1 As shown, each arc-shaped area S and a plurality of protrusions 13 cooperate to form an area Q, and the plurality of protrusions 13 forming an area Q are spaced apart from each other. Figure 2 The spacing D between two adjacent protrusions 13 in the plurality of protrusions 13 that form an area Q is greater than or equal to 1 mm. In this way, the spacing between the protrusions 13 can be used to form an airflow channel, thereby further reducing the probability of forming unstable airflow and alleviating the problem of thick edges.

[0035] Figure 2 、 Figure 3 and Figure 4 The following are structural diagrams of an area in a graphite disk provided in different embodiments of the present application. Figure 2 As shown, the protrusion 13 may be columnar; Figure 3 and Figure 4 As shown, the shape of the protrusion 13 can also be plate-shaped. The structure of the columnar or plate-shaped protrusion is simple and easy to prepare. In one embodiment, as shown in FIG. Figure 2 、 Figure 3 and Figure 4 As shown, the protrusion 13 includes a through hole 130, and the through hole 130 passes through the protrusion 13 in a direction parallel to the bottom wall of the groove 12. Figure 2 As shown, the protrusion 13 is columnar, and a plurality of protrusions 13 cooperate with part of the side wall of the groove 12 to form an area Q, and each protrusion 13 is provided with at least one through hole 130. For another example, Figure 3 As shown, the protrusion 13 is plate-shaped, the number of the protrusion 13 is one, the protrusion 13 cooperates with part of the side wall of the groove 12 to form an area Q, and a plurality of through holes 130 are provided in the protrusion 13. For another example, Figure 4As shown, the protrusion 13 is plate-shaped and there are multiple protrusions 13. The multiple protrusions 13 cooperate with part of the sidewall of the groove 12 to enclose an area Q. Each protrusion 13 is provided with at least one through-hole 130. By providing through-holes 130 in the protrusions 13, the airflow channel can be increased, thereby further reducing the probability of unstable airflow and alleviating the problem of thick edges.

[0036] Figure 5 This is a schematic diagram of the structure of the graphite disk provided in the second embodiment of this application. Figure 5 As shown, the graphite disk 20 and Figure 1 The graphite disk 10 shown differs only in that the edge of the orthographic projection of the groove 22 onto the graphite disk body 21 comprises multiple arc segments S and a zigzag segment Z located between two adjacent arc segments S. By providing the zigzag segment Z between two arc segments S, the sidewall length of the groove 22 can be extended. Since heat is transferred through the graphite disk body 21 during epitaxial growth, extending the sidewall of the groove 22 increases the heat dissipation area, thereby preventing heat concentration and improving the uniformity of substrate heating, thereby ensuring uniformity in the subsequently grown epitaxial wafers.

[0037] Figure 6 This is a schematic diagram of the structure of the graphite disk provided in the third embodiment of the present application. Figure 6 As shown, the graphite disk 30 and Figure 1 The only difference between the graphite disk 10 shown is that the curved sidewalls of the grooves 32 defining a region Q have an orthographic projection onto the graphite disk body 31 that is a minor arc. This allows the two endpoints of the arc segment S to position the substrate within region Q. Consequently, the number of protrusions 33 can be reduced, thereby increasing the hollow areas between protrusions 33 and, consequently, the air circulation space, further alleviating the problem of thickened edges caused by airflow.

[0038] Figure 7 This is a schematic diagram of the structure of the graphite disk provided in the fourth embodiment of the present application. Figure 7 As shown, in this embodiment, the graphite disk 40 includes multiple regions, including a first region Q1 and a second region Q2. The multiple protrusions 43 include a shared protrusion 430. The boundary lines of the first region Q1 and the second region Q2 each include a shared protrusion 430. A shared protrusion 430 is a protrusion that forms the boundary of at least two regions. The number and location of shared protrusions 430 can be appropriately set based on actual needs. Providing shared protrusions 430 can improve protrusion utilization and simplify the process.

[0039] The above description is only a preferred embodiment of the present application and is not intended to limit the present application. Any modifications, equivalent replacements, etc. made within the spirit and principles of the present application shall be included in the scope of protection of the present application.

Claims

1. A graphite disk, characterized in that: The graphite disk body includes a groove and a plurality of protrusions located on the bottom wall of the groove. The plurality of protrusions divide the groove into a plurality of independent areas. The edge of the positive projection of the groove on the graphite disk body includes at least one arc segment. The side wall corresponding to each arc segment and at least one protrusion cooperate to enclose one area.

2. The graphite disk according to claim 1, characterized in that The arc segment is a minor arc.

3. The graphite disk according to claim 1, characterized in that The edge of the orthographic projection of the groove on the graphite disk body includes a plurality of arc segments and a straight line segment located between two adjacent arc segments.

4. The graphite disk according to claim 3, characterized in that The straight line segment and the arc segment are tangent.

5. The graphite disk according to claim 1, characterized in that The edge of the orthographic projection of the groove on the graphite disk body includes a plurality of arc segments and a broken line segment located between two adjacent arc segments.

6. The graphite disk according to claim 1, characterized in that The side wall corresponding to each arc segment and the plurality of protrusions cooperate to enclose an area, and the plurality of protrusions that enclose the area are spaced apart from each other.

7. The graphite disk according to claim 6, characterized in that The distance between two adjacent protrusions in the plurality of protrusions that enclose one area is ≥1 mm.

8. The graphite disk according to claim 1, characterized in that The plurality of regions include a first region and a second region; the plurality of protrusions include a common protrusion; and the sidewall of the first region and the sidewall of the second region respectively include the common protrusion.

9. The graphite disk according to any one of claims 1 to 8, characterized in that: The protrusion is plate-shaped or column-shaped.

10. The graphite disk according to any one of claims 1 to 8, characterized in that: The protrusion includes a through hole, and the through hole passes through the protrusion in a direction parallel to the bottom wall of the groove.

11. The graphite disk according to any one of claims 1 to 8, characterized in that: The material of the protrusion is any one of SiC, quartz, graphite and sapphire.

12. The graphite disk according to any one of claims 1 to 8, characterized in that: The surfaces of the plurality of regions are convex or concave.

Citation Information

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