Electrostatic chucking method for semiconductor
By wrapping the surface of the electrostatic chuck with conductive cloth and antistatic tape, and grounding it to the sandblasting fixture, the problem of discharge breakdown during the sandblasting process of the electrostatic chuck is solved, thus achieving safe processing and pattern accuracy of the electrostatic chuck.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- HANGZHOU ZHIXIN SEMICON CO LTD
- Filing Date
- 2023-03-29
- Publication Date
- 2026-05-22
AI Technical Summary
During the sandblasting process, the high insulation properties of alumina ceramics cause static electricity to accumulate in the electrostatic chuck, leading to discharge breakdown.
The surface of the electrostatic chuck is wrapped with conductive cloth and antistatic tape, and grounded through a sandblasting fixture to form a connected state. The conductive cloth and antistatic tape are used to conduct electricity and discharge static charge, respectively, to avoid static electricity accumulation.
It effectively avoids the discharge breakdown phenomenon of electrostatic chucks during sandblasting, ensuring the accuracy of air grooves and raised patterns.
Smart Images
Figure CN116403963B_ABST
Abstract
Description
Technical Field
[0001] This invention relates to the field of semiconductor technology, and more specifically, to a method for processing semiconductors using electrostatic chucks. Background Technology
[0002] In the research, development, processing, and production of electrostatic chucks, the morphological processing of the surface ceramic is essential. The morphology of the surface ceramic often includes tiny protrusions and fine air grooves in a certain dimension, and such morphological features are usually achieved using sandblasting technology. Sandblasting is a process that uses compressed air as power to impact the substrate surface with a high-speed stream of sand. Due to the impact and cutting action of the sand stream on the workpiece surface, the surface of the workpiece achieves a certain degree of cleanliness and removal. If a coating is applied at a corresponding spatial location and a specific removal amount is achieved, a specific three-dimensional morphology will be formed.
[0003] Currently, many electrostatic chucks are based on alumina ceramics. Alumina is also a typical insulating material with a volume resistivity as high as 10¹⁵ Ω▪cm and an insulation strength of 15 KV / mm. It cannot dissipate the static charge accumulated on its surface, thus causing static electricity accumulation and discharge phenomena, resulting in ceramic breakdown during the sandblasting process of electrostatic chucks. Summary of the Invention
[0004] To overcome the above shortcomings, the present invention provides an electrostatic chuck processing method for semiconductors, which can prevent discharge breakdown during the electrostatic chuck sandblasting process.
[0005] To solve the above-mentioned technical problems, the present invention adopts the following technical solution: an electrostatic chuck processing method for semiconductors, including air groove processing and bump processing;
[0006] The air groove processing includes the following steps:
[0007] S1, The inner adhesive film is coated on the upper surface of the electrostatic chuck;
[0008] S2, a conductive cloth is wrapped around the outer surface of the electrostatic chuck, and the conductive cloth wraps the entire electrostatic chuck, while the inner adhesive film is covered by the conductive cloth.
[0009] S3, cover the upper surface of the conductive cloth with an outer adhesive film, so that the outer adhesive film, conductive cloth and inner adhesive film arranged sequentially on the upper surface of the electrostatic chuck form a three-layer covering film.
[0010] S4, load the electrostatic chuck onto the sandblasting fixture that has been wrapped with conductive cloth. Both the conductive cloth on the electrostatic chuck and the conductive cloth on the sandblasting fixture are grounded.
[0011] S5, cut out air groove patterns on the cover layer;
[0012] S6, perform air blasting on the upper surface of the electrostatic chuck;
[0013] S7, clean the outer adhesive film, conductive cloth and inner adhesive film on the surface of the electrostatic chuck;
[0014] The process of creating raised dots includes the following steps:
[0015] S8, cover the sides and bottom surface of the electrostatic chuck with antistatic tape;
[0016] S9, cover the surface of the electrostatic chuck with an adhesive film;
[0017] S10, Load the electrostatic chuck onto the sandblasting fixture that has been wrapped with antistatic tape. Both the antistatic tape on the electrostatic chuck and the antistatic tape on the sandblasting fixture are grounded.
[0018] S11, a raised dot pattern is cut out on the adhesive film;
[0019] S12, perform a sandblasting operation on the upper surface of the electrostatic chuck to create raised dots;
[0020] S13, Clean the anti-static tape and adhesive film from the surface of the electrostatic chuck.
[0021] When machining air grooves on the surface of an electrostatic chuck, conductive cloth completely wraps the upper, side, and bottom surfaces of the chuck, creating a Faraday cage effect. An outer adhesive film is then applied over the conductive cloth to protect the non-exposed sandblasting areas from damage during prolonged sandblasting. The sandblasting fixture is completely wrapped in conductive cloth, ensuring full contact between the conductive cloth on the electrostatic chuck and the conductive cloth on the sandblasting fixture, thus establishing a connection and grounding the conductive cloth. Any static charge generated on the outer surface of the electrostatic chuck during sandblasting is promptly conducted away through the conductive cloth, preventing static accumulation and potential discharge that could damage the chuck.
[0022] When machining raised dots on the surface of an electrostatic chuck, anti-static tape is used to completely wrap the sides and bottom of the chuck. The sandblasting fixture is also completely wrapped with anti-static tape. The anti-static tape on the chuck and the anti-static tape on the sandblasting fixture are in complete contact to form a connection, and the anti-static tape is grounded. The surface resistance of the anti-static tape is less than 10 ohms. 9 Ω, the electrostatic discharge time is less than 0.5 s. The function of the antistatic tape is to conduct away some of the static charge formed on the outer surface of the electrostatic chuck during the sandblasting process in a timely manner, so as to avoid static accumulation and discharge phenomenon that could damage the electrostatic chuck.
[0023] The electrostatic chuck processing method for semiconductors of the present invention can prevent discharge breakdown during the electrostatic chuck sandblasting process.
[0024] Preferably, the sandblasting fixture is provided with a mounting groove that is compatible with the electrostatic chuck, and the lower part of the electrostatic chuck is loaded in the mounting groove during processes S4 and S10.
[0025] The mounting slot facilitates reliable support of the electrostatic chuck by the sandblasting fixture.
[0026] As a preferred embodiment, during the S6 process, the electrostatic chuck is placed inside the sandblasting chamber for sandblasting, and ion air blown out by the ion blower is introduced into the sandblasting chamber.
[0027] The ion wind produced by the ion blower neutralizes the charge inside the sandblasting chamber and on the surface of the electrostatic chuck.
[0028] As a preferred option, the S6 sandblasting cycle is 40-80 times.
[0029] The number of sandblasting cycles is controlled to ensure the processing effect of the air groove.
[0030] As a preferred option, the number of S12 sandblasting cycles is 3-10.
[0031] The protrusions are low in height, resulting in fewer sandblasting cycles, shorter sandblasting time, and faster speed.
[0032] Preferably, the inner film, outer film, and top film are all polyethylene films.
[0033] As a preferred option, alumina abrasive particles are used in the sandblasting processes of S6 and S12.
[0034] Alumina sand particles are low in cost.
[0035] Preferably, a withstand voltage test is performed after S13, in which a voltage of 10 KV is applied to the electrostatic chuck, and the insulation resistance value of the electrostatic chuck is tested.
[0036] Performing a pressure resistance test on the electrostatic chuck after air groove and bump processing can ensure the performance of the electrostatic chuck.
[0037] Preferably, a film pressing operation is performed on the upper surface of the electrostatic chuck before S5 and before S11. The film pressing operation is performed using a film pressing device, which includes a worktable and a movable seat. A transverse drive mechanism is installed on the worktable, which drives the movable seat to move back and forth. A rotating sleeve is installed on the movable seat, and two opposing vertical plates are installed on the rotating sleeve. An elastic film pressing cloth is connected between the two vertical plates. During the film pressing operation, the electrostatic chuck is placed on the worktable, so that the film pressing cloth is pressed on the upper surface of the electrostatic chuck. The movable seat moves back and forth, and the rotating sleeve rotates, so that the film pressing cloth is pressed on the electrostatic chuck to move the film pressing.
[0038] Before creating the air groove pattern, the electrostatic chuck performs a pressing operation to prevent air bubbles and wrinkles from appearing in the cover layer or between the cover layer and the electrostatic chuck surface during S5. This helps ensure the accuracy of the air groove pattern cutting and avoids deformation of the cover layer during sandblasting due to air bubbles and wrinkles, which would change the air groove pattern and affect the accuracy of the air groove shape.
[0039] Before creating the raised dot pattern, the electrostatic chuck performs a lamination operation to prevent air bubbles and wrinkles from appearing between the antistatic tape and the surface of the electrostatic chuck during S11. This helps ensure the accuracy of the raised dot pattern cutting and avoids deformation of the antistatic tape during sandblasting due to air bubbles and wrinkles, which would change the raised dot pattern and affect the accuracy of the raised dot shape.
[0040] During the lamination process, the moving seat moves left and right while the rotating sleeve rotates, causing the lamination cloth to rotate and move on the electrostatic chuck. Lamination is achieved in both the radial and circumferential directions, resulting in a good lamination effect. The elastic lamination cloth presses firmly onto the electrostatic chuck, ensuring a good bonding effect and preventing damage to the surface of the electrostatic chuck during the lamination process.
[0041] Preferably, a lifting plate is provided on the upright plate, the pressure film is connected to the lifting plate of the upright plate, a return spring is installed between the lifting plate and the upright plate, a slide groove is provided on the upright plate, the lifting plate is installed in the slide groove, and a locking pin is connected between the lifting plate and the upright plate.
[0042] Initially, under the action of the return spring, the lifting plate is at its highest position. At this time, the distance between the pressure film cloth and the worktable is large, making it easy to insert the sandblasting fixture equipped with an electrostatic chuck between the pressure film cloth and the worktable. After the sandblasting fixture equipped with the electrostatic chuck is inserted into the pressure film cloth and the worktable, the lifting plate is moved downward, so that the pressure film cloth is pressed onto the surface of the electrostatic chuck. Then, the locking pin is connected between the lifting plate and the upright plate to lock the lifting plate. After that, the moving seat moves, and the rotating sleeve rotates to perform the pressure film operation.
[0043] Compared with the prior art, the beneficial effects of the present invention are: (1) the electrostatic chuck processing method for semiconductors of the present invention can avoid the discharge breakdown phenomenon during the electrostatic chuck sandblasting process; (2) the air groove pattern and the bump pattern will not have bubbles and wrinkles, which is conducive to ensuring the processing accuracy of the air groove and bump. Attached Figure Description
[0044] Figure 1 This is a schematic diagram illustrating the process of the electrostatic chuck air groove of the present invention;
[0045] Figure 2 This is a structural diagram of the electrostatic chuck air groove pattern of the present invention;
[0046] Figure 3 This is a schematic diagram illustrating the processing principle of the electrostatic chuck protrusions of the present invention;
[0047] Figure 4 This is a structural diagram of the bump pattern of the electrostatic chuck of the present invention;
[0048] Figure 5 This is a schematic diagram of the sandblasting principle of the present invention;
[0049] Figure 6 This is a schematic diagram of the film pressing device according to Embodiment 2 of the present invention;
[0050] Figure 7 This is a partial structural schematic diagram of the film pressing device according to Embodiment 2 of the present invention;
[0051] Figure 8 This is a top view of the rotating sleeve connection of the film pressing device according to Embodiment 2 of the present invention;
[0052] In the diagram: 1. Electrostatic chuck, 2. Inner adhesive film, 3. Conductive cloth, 4. Outer adhesive film, 5. Sandblasting fixture, 6. Air groove pattern, 7. Sandblasting chamber, 8. Ionizing fan, 9. Sandblasting pipe, 10. Antistatic tape, 11. Top adhesive film, 12. Raised dot pattern, 13. Mounting groove, 14. Workbench, 15. Moving seat, 16. Rotating sleeve, 17. Vertical plate, 18. Pressing cloth, 19. Slide rail, 20. Turntable, 21. Connecting rod, 22. Rotating motor, 23. Gear, 24. Gear ring, 25. Positioning ring, 26. Convex ring, 27. Limiting block, 28. Lifting plate, 29. Return spring, 30. Slide groove, 31. Locking pin, 32. Pulling spring, 33. Locking hole, 34. Clearance groove, 35. Actuating column, 36. Limiting end cap, 37. Top block. Detailed Implementation
[0053] The technical solution of the present invention will be further described in detail below through specific embodiments and in conjunction with the accompanying drawings:
[0054] Example 1: A method for processing electrostatic chucks for semiconductors, including air groove processing and bump processing;
[0055] The air groove processing includes the following steps:
[0056] S1, an inner adhesive film 2 is coated on the upper surface of the electrostatic chuck 1;
[0057] S2, Wrap conductive cloth 3 around the outer surface of the electrostatic chuck. The conductive cloth wraps the entire electrostatic chuck, and the inner adhesive film is covered by the conductive cloth.
[0058] S3, cover the upper surface of the conductive cloth with an outer adhesive film 4, so that the outer adhesive film, conductive cloth and inner adhesive film arranged sequentially on the upper surface of the electrostatic chuck form a three-layer covering film.
[0059] S4, load the electrostatic chuck onto the sandblasting fixture 5, which has been wrapped with conductive cloth. Both the conductive cloth on the electrostatic chuck and the conductive cloth on the sandblasting fixture are grounded (e.g., ...). Figure 1(as shown)
[0060] S5, cut out the air groove pattern 6 on the cover layer (e.g.) Figure 2 (as shown)
[0061] S6, perform air blasting on the upper surface of the electrostatic chuck; during this process, the electrostatic chuck is placed in the blasting chamber 7 for blasting, and ion air (such as air blown by the ion blower 8) is introduced into the blasting chamber. Figure 5 (As shown in the figure); the sandblasting cycle is 40-80 times. In this embodiment, the sandblasting time is 4 hours, and after 55 cycles, one pass of the sandblasting pipe 9 from left to right constitutes one cycle. After a certain number of sandblasting cycles, the electrostatic voltage of the electrostatic chuck is measured, as shown in Table 1 below. From Table 1, it can be seen that under these conditions, the absolute electrostatic voltage of the ceramic surface of the electrostatic chuck is always around 700 V, which is a relatively ideal low voltage value.
[0062] Table 1. Electrostatic voltage of electrostatic chuck under air groove sandblasting process with three layers of cover film.
[0063]
[0064] S7. Clean the outer adhesive film, conductive cloth, and inner adhesive film on the surface of the electrostatic chuck; manually peel off the covering film on the surface of the electrostatic chuck and clean the surface of the electrostatic chuck.
[0065] The process of creating raised dots includes the following steps:
[0066] S8, cover the sides and bottom surface of the electrostatic chuck with antistatic tape 10;
[0067] S9, Cover the upper surface of the electrostatic chuck with adhesive film 11;
[0068] S10, Load the electrostatic chuck onto the sandblasting fixture that has been wrapped with antistatic tape. Both the antistatic tape on the electrostatic chuck and the antistatic tape on the sandblasting fixture are grounded (e.g., ...). Figure 3 (as shown)
[0069] S11, Cut out raised dot pattern 12 on the adhesive film (e.g.) Figure 4 (as shown)
[0070] S12, perform a sandblasting operation on the upper surface of the electrostatic chuck with raised dots; the number of sandblasting cycles is 3-10 times. In this embodiment, 6 short sandblasting cycles are performed. The static voltage is detected in each cycle. As shown in Table 2 below, the absolute static voltage is always maintained at a low level of about 200 V.
[0071] Table 2 Static Voltage of Sandblasting Under Single-Layer Top Adhesive Film with Raised Dots
[0072]
[0073] S13: Clean the anti-static tape and adhesive film from the surface of the electrostatic chuck. After S13, perform a withstand voltage test by applying a 10 kV voltage to the electrostatic chuck and testing its insulation resistance value. The insulation resistance value can also reach an excellent performance of about 100 GΩ.
[0074] The sandblasting fixture has a mounting groove 13 adapted to the electrostatic chuck. During processes S4 and S10, the lower part of the electrostatic chuck is loaded in the mounting groove. In S4, the lower part of the electrostatic chuck is supported at the bottom of the mounting groove, ensuring electrical connection between the conductive cloth on the electrostatic chuck and the conductive cloth on the sandblasting fixture. Grounding the conductive cloth on the sandblasting fixture is sufficient to ground both the conductive cloth on the electrostatic chuck and the conductive cloth on the sandblasting fixture. In S10, the lower part of the electrostatic chuck is supported at the bottom of the mounting groove, ensuring electrical connection between the antistatic tape on the electrostatic chuck and the antistatic tape on the sandblasting fixture. Grounding the antistatic tape on the sandblasting fixture is sufficient to ground both the antistatic tape on the electrostatic chuck and the antistatic tape on the sandblasting fixture. In this embodiment, the inner film, outer film, and top film are all polyethylene films. The abrasive particles used in the sandblasting processes S6 and S12 are alumina abrasive particles with a particle size of 320 mesh.
[0075] When machining air grooves on the surface of an electrostatic chuck, conductive cloth completely wraps the upper, side, and bottom surfaces of the chuck, creating a Faraday cage effect. An outer adhesive film is then applied over the conductive cloth to protect the non-exposed sandblasting areas from damage during prolonged sandblasting. The sandblasting fixture is completely wrapped in conductive cloth, ensuring full contact between the conductive cloth on the electrostatic chuck and the conductive cloth on the sandblasting fixture, thus establishing a connection and grounding the conductive cloth. Any static charge generated on the outer surface of the electrostatic chuck during sandblasting is promptly conducted away through the conductive cloth, preventing static accumulation and potential discharge that could damage the chuck.
[0076] When machining raised dots on the surface of an electrostatic chuck, anti-static tape is used to completely wrap the sides and bottom of the chuck. The sandblasting fixture is also completely wrapped with anti-static tape. The anti-static tape on the chuck and the anti-static tape on the sandblasting fixture are in complete contact to form a connection, and the anti-static tape is grounded. The surface resistance of the anti-static tape is less than 10 ohms. 9 Ω, the electrostatic discharge time is less than 0.5 s. The function of the antistatic tape is to conduct away some of the static charge formed on the outer surface of the electrostatic chuck during the sandblasting process in a timely manner, so as to avoid static accumulation and discharge phenomenon that could damage the electrostatic chuck.
[0077] The electrostatic chuck processing method for semiconductors of the present invention can prevent discharge breakdown during the electrostatic chuck sandblasting process.
[0078] Example 2: A method for processing an electrostatic chuck for semiconductors, the steps of which are similar to those in Example 1, the main difference being that in this example, a film pressing operation is performed on the upper surface of the electrostatic chuck before S5 and before S11; the film pressing operation is performed using a film pressing device. Figure 6 , Figure 7 , Figure 8 As shown, the film pressing device includes a worktable 14 and a movable seat 15. A transverse drive mechanism is installed on the worktable, which drives the movable seat to reciprocate. A rotating sleeve 16 is mounted on the movable seat, and two opposing upright plates 17 are mounted on the rotating sleeve. An elastic film pressing cloth 18 is connected between the two upright plates. During film pressing, an electrostatic chuck is placed on the worktable, so that the film pressing cloth is pressed against the upper surface of the electrostatic chuck. The movable seat reciprocates, and the rotating sleeve rotates, causing the film pressing cloth to move and press against the electrostatic chuck. A slide rail 19 is provided on the worktable and the movable seat respectively. A sliding groove is provided on the lower surface of the movable seat and the slide rail respectively. Both the slide rail and the sliding groove are T-shaped structures. The movable seat is slidably mounted on the slide rail through the sliding groove and is supported on the worktable. The transverse drive mechanism includes a moving motor, a turntable 20, and a connecting rod 21. The output shaft of the moving motor is connected to the turntable. The connecting rod is rotatably mounted between the turntable and the movable seat. The operation of the moving motor realizes the rotation of the turntable, which in turn drives the movable seat to reciprocate. A rotary motor 22 is mounted on the movable base. The output shaft of the rotary motor is connected to a gear 23. A gear ring 24 is provided on the outer wall of the rotating sleeve. The gear and the gear ring mesh to drive the rotation. The operation of the rotary motor drives the rotating sleeve to rotate. A positioning ring 25 is provided on the movable base, and a convex ring 26 is provided on the inner wall of the rotating sleeve. The rotating sleeve is mounted on the outer wall of the positioning ring. A limiting block 27 is connected to the upper part of the positioning ring. The limiting block covers the convex ring to axially limit the rotation of the rotating sleeve.
[0079] A lifting plate 28 is installed on the upright plate, and a pressure film cloth is connected to the lifting plate of the upright plate. A return spring 29 is installed between the lifting plate and the upright plate. A sliding groove 30 is provided on the upright plate, and the lifting plate is installed in the sliding groove. A locking pin 31 is connected between the lifting plate and the upright plate. A pull spring 32 is installed between the locking pin and the upright plate. A locking hole 33 is provided on the lifting plate corresponding to the locking pin. The end of the locking pin is inserted into the locking hole to limit the lifting plate. An avoidance groove 34 communicating with the sliding groove is provided on the upright plate. A toggle post 35 is connected to the lifting plate. The toggle post passes through the avoidance groove. A limiting end cap 36 is connected to the toggle post. The limiting end cap is attached to the surface of the upright plate. A top block 37 for limiting the lifting plate is provided at the upper end of the upright plate.
[0080] During the lamination operation, initially, under the action of the return spring, the lifting plate is at its highest position. At this time, the distance between the lamination cloth and the worktable is large, making it easy to insert the sandblasting fixture equipped with the electrostatic chuck between the lamination cloth and the worktable. After the sandblasting fixture equipped with the electrostatic chuck is inserted into the lamination cloth and the worktable, the lifting plate is moved downwards, so that the lamination cloth is pressed onto the surface of the electrostatic chuck, and the locking pin is inserted into the locking hole to lock the lifting plate. Then, the moving seat moves left and right, while the rotating sleeve rotates, so that the lamination cloth rotates and moves on the electrostatic chuck, achieving lamination action in both radial and circumferential directions, resulting in good lamination effect. After lamination is completed, the moving motor and the rotating motor stop, the locking pin is pulled outwards, and under the action of the return spring, the lifting plate moves upwards to separate the lamination cloth from the electrostatic chuck. Finally, the electrostatic chuck and the sandblasting fixture are removed from the worktable. Other steps are the same as in Example 1.
[0081] The embodiments described above are merely preferred embodiments of the present invention and are not intended to limit the present invention in any way. Other variations and modifications may be made without departing from the technical solutions described in the claims.
Claims
1. A method for processing semiconductors using an electrostatic chuck, characterized in that, This includes air groove processing and bump processing; The air groove processing includes the following steps: S1, The inner adhesive film is coated on the upper surface of the electrostatic chuck; S2, a conductive cloth is wrapped around the outer surface of the electrostatic chuck, and the conductive cloth wraps the entire electrostatic chuck, while the inner adhesive film is covered by the conductive cloth. S3, cover the upper surface of the conductive cloth with an outer adhesive film, so that the outer adhesive film, conductive cloth and inner adhesive film arranged sequentially on the upper surface of the electrostatic chuck form a three-layer covering film. S4, load the electrostatic chuck onto the sandblasting fixture that has been wrapped with conductive cloth. Both the conductive cloth on the electrostatic chuck and the conductive cloth on the sandblasting fixture are grounded. S5, cut out air groove patterns on the cover layer; S6, perform air blasting on the upper surface of the electrostatic chuck; S7, clean the outer adhesive film, conductive cloth and inner adhesive film on the surface of the electrostatic chuck; The process of creating raised dots includes the following steps: S8, cover the sides and bottom surface of the electrostatic chuck with antistatic tape; S9, cover the surface of the electrostatic chuck with an adhesive film; S10, Load the electrostatic chuck onto the sandblasting fixture that has been wrapped with antistatic tape. Both the antistatic tape on the electrostatic chuck and the antistatic tape on the sandblasting fixture are grounded. S11, a raised dot pattern is cut out on the adhesive film; S12, perform a sandblasting operation on the upper surface of the electrostatic chuck to create raised dots; S13, Clean the anti-static tape and adhesive film from the surface of the electrostatic chuck.
2. The electrostatic chuck processing method for semiconductors according to claim 1, characterized in that, The sandblasting fixture is equipped with a mounting groove that is compatible with the electrostatic chuck. During processes S4 and S10, the lower part of the electrostatic chuck is loaded in the mounting groove.
3. The electrostatic chuck processing method for semiconductors according to claim 1, characterized in that, During the S6 process, the electrostatic chuck is placed inside the sandblasting chamber for sandblasting, and ion air blown out by the ion blower is introduced into the sandblasting chamber.
4. The electrostatic chuck processing method for semiconductors according to claim 1, characterized in that, The S6 sandblasting cycle is 40-80 times.
5. The electrostatic chuck processing method for semiconductors according to claim 1, characterized in that, The S12 sandblasting cycle is 3-10 times.
6. The electrostatic chuck processing method for semiconductors according to claim 1, characterized in that, The inner film, outer film, and top film are all polyethylene films.
7. The electrostatic chuck processing method for semiconductors according to claim 1, characterized in that, The sand particles used in the S6 and S12 sandblasting processes are alumina sand particles.
8. A method for processing semiconductors using an electrostatic chuck according to claim 1, characterized in that, After S13, a withstand voltage test is performed. A voltage of 10 kV is applied to the electrostatic chuck, and the insulation resistance value of the electrostatic chuck is tested.
9. A method for processing semiconductors using an electrostatic chuck according to any one of claims 1 to 8, characterized in that, Before S5 and S11, a film pressing operation is performed on the upper surface of the electrostatic chuck. The film pressing operation is carried out using a film pressing device, which includes a worktable and a moving base. A transverse drive mechanism is installed on the worktable, which drives the moving base to move back and forth. A rotating sleeve is installed on the moving base, and two opposing vertical plates are installed on the rotating sleeve. An elastic film pressing cloth is connected between the two vertical plates. During the film pressing operation, the electrostatic chuck is placed on the worktable, so that the film pressing cloth is pressed on the upper surface of the electrostatic chuck. The moving base moves back and forth, and the rotating sleeve rotates, so that the film pressing cloth is pressed on the electrostatic chuck to move the film pressing.
10. The electrostatic chuck processing method for semiconductors according to claim 9, characterized in that, A lifting plate is installed on the upright plate, and the pressure film cloth is connected to the lifting plate of the upright plate. A return spring is installed between the lifting plate and the upright plate. The upright plate is provided with a sliding groove, and the lifting plate is installed in the sliding groove. A locking pin is connected between the lifting plate and the upright plate.