A thin film processing apparatus and method thereof

Abstract

The application discloses a thin film processing device and a method thereof. The device comprises a reaction chamber, an air inlet partition and an air outlet partition; an air inlet flange assembly comprising a plurality of main reaction gas nozzles corresponding to a reaction space and auxiliary gas nozzles corresponding to a purification space; and a gas guide assembly comprising a plurality of auxiliary gas guide pipes in communication with auxiliary gas inlets of the air inlet partition, and the gas flow in each auxiliary gas guide pipe is independently adjustable. The main reaction gas is delivered to the reaction space through the main reaction gas nozzles, and the auxiliary gas is introduced into the air inlet partition through the auxiliary gas nozzles, the auxiliary gas guide pipes and the auxiliary gas inlets. The main reaction gas and the auxiliary gas in the device have started the mixing process before entering the wafer processing area, and the independent regulation of the auxiliary gas in each auxiliary gas guide pipe is combined to realize the accurate regulation of the uniformity of the mixed gas composition, which is beneficial to obtain better film uniformity and film quality.

Description

TECHNICAL FIELD

[0001] The present application relates to the field of semiconductor equipment, in particular to a thin film processing device and a method thereof. BACKGROUND

[0002] In the production process of semiconductor devices, a large number of micro-processing is needed, and the commonly used way is to use the principle of vacuum reaction chamber to process and process semiconductor wafers by using gas deposition or plasma processing technology. According to whether the thin film deposition process contains a chemical reaction, the thin film gas deposition can be divided into physical vapor deposition (PVD) and chemical vapor deposition (CVD). Among them, CVD is currently the most widely used technology in the semiconductor industry to deposit a variety of materials, including a wide range of insulating materials, most metal materials and metal alloy materials.

[0003] However, as the feature size of semiconductor devices is becoming smaller and the integration of devices is becoming higher, higher and higher requirements are put forward for the uniformity of the gas deposition thin film. Although the thin film deposition device has been updated several times and its performance has been greatly improved, there are still many deficiencies in the uniformity of the thin film deposition. In recent years, with the decrease of the critical dimension (CD) of semiconductor chips, the demand for silicon epitaxial layer growth reactors is increasing. In the growth process of the semiconductor transistor device layer, in addition to the uniformity of the silicon material, the uniformity of the dopant is also an important indicator. However, the input amount of the dopant source gas is much smaller than that of the silicon material source gas, so how to accurately adjust the best flow and mixing ratio distribution of the dopant material or silicon material gas on the wafer is particularly important in the design of the silicon epitaxial growth reactor.

[0004] In the thin film deposition process, the growth environment of the wafer thin film is very harsh, and various process conditions will affect the uniformity of the wafer surface thin film deposition, such as the cleanliness of the reaction space, the input time of the dopant source gas, the doping degree of the mixed gas, the direction and distribution of the process gas flow, the uniformity of the gas flow field, the wafer heating temperature field condition, etc., which directly determine the quality of the wafer deposition thin film. If the process environment of the wafer processing area in the reaction chamber is not completely consistent, it will cause the deposited thin film on the wafer surface to have uneven thickness, uneven composition, uneven physical properties and other adverse phenomena, thereby reducing the yield of wafer production. However, in actual application, the process environment in the reaction chamber is often complex, and it is difficult to achieve precise control, especially the uniformity of the component distribution of the process gas. Therefore, it is necessary to improve the existing thin film processing device to improve the uniformity of the wafer thin film deposition. SUMMARY

[0005] The film processing device and method of the present application combine an air inlet flange assembly, a gas flow guide assembly and an air inlet baffle plate, and transport main reaction gas to the upper side of the air inlet baffle plate through the main reaction gas injection port of the air inlet flange assembly, transport auxiliary gas to the upper side of the air inlet baffle plate through the auxiliary gas injection port of the air inlet flange assembly, the auxiliary gas flow guide pipe of the gas flow guide assembly and the auxiliary gas inlet channel of the air inlet baffle plate, so that the mixing process of the two kinds of gas starts before entering the wafer processing area, and the independent regulation of the auxiliary gas in each auxiliary gas flow guide pipe is combined to realize the accurate regulation of the uniformity of the mixed gas composition, which is beneficial to obtain better film deposition uniformity and film quality.

[0006] In order to achieve the above-mentioned purpose, the present application is realized by the following technical scheme:

[0007] A film processing device, comprising:

[0008] An elongated reaction chamber surrounded by a reaction chamber top wall, a bottom wall and two side walls, further comprising an air inlet end opening and an air outlet end opening;

[0009] An air inlet baffle plate and an air outlet baffle plate are respectively arranged near the air inlet end opening and the air outlet end opening in the reaction chamber, so as to divide the reaction chamber into an upper reaction space and a lower purification space;

[0010] The upper side of the air inlet baffle plate is an air inlet area, and the upper side of the air outlet baffle plate is an air outlet area, and the wafer processing area between the air inlet area and the air outlet area is used to accommodate a pedestal carrying a wafer to perform a film deposition process;

[0011] An air inlet flange assembly is arranged at the air inlet end opening, which comprises a plurality of main reaction gas injection ports corresponding to the reaction space, so as to inject main reaction gas into the downstream wafer processing area;

[0012] The air inlet flange assembly further comprises an auxiliary gas injection port arranged below the main reaction gas injection port and corresponding to the purification space;

[0013] The air inlet baffle plate further comprises a gas flow guide assembly below the air inlet baffle plate, and the gas flow guide assembly comprises a plurality of auxiliary gas flow guide pipes extending in the longitudinal direction, the auxiliary gas flow guide pipes are arranged between the auxiliary gas injection port and the wafer processing area, and the gas flow in the plurality of auxiliary gas flow guide pipes is independently adjustable; the auxiliary gas flow guide pipes are connected to the upper side of the air inlet baffle plate through the auxiliary gas inlet channel arranged on the air inlet baffle plate;

[0014] The auxiliary gas is introduced into the upper side of the air inlet baffle plate through the auxiliary gas injection port of the air inlet flange assembly, the auxiliary gas flow guide pipe of the gas flow guide assembly and the auxiliary gas inlet channel of the air inlet baffle plate in sequence.

[0015] Optionally, the flow rate of the main reaction gas is greater than that of the auxiliary gas.

[0016] Optionally, the end surface of the gas flow guide assembly away from the auxiliary gas nozzle is arranged in concentric circles with the wafer to be processed.

[0017] The exhaust ports of each auxiliary gas inlet passage of the gas inlet partition plate are the same distance from the wafer processing area.

[0018] Optionally, the exhaust ports of each auxiliary gas inlet passage of the gas inlet partition plate are different distances from the wafer processing area.

[0019] Optionally, the gas outlet direction of the auxiliary gas inlet passage is vertically upward or inclined toward the wafer processing area.

[0020] Optionally, the gas outlet ports of each auxiliary gas flow guide pipe are uniformly distributed along the circumference of one side of the wafer to be processed.

[0021] Optionally, the gas inlet flange assembly is provided with a plurality of main reaction gas passages, and the main reaction gas passes through the main reaction gas passages to reach the main reaction gas nozzle. The main reaction gas passage and / or the auxiliary gas flow guide pipe and / or the auxiliary gas inlet passage is provided with a uniform gas chamber.

[0022] Optionally, the gas flow guide assembly further comprises a second auxiliary gas flow guide pipe to provide a purge gas, and the gas outlet port of the second auxiliary gas flow guide pipe is located below the gas inlet partition plate and faces a purge space below the wafer processing area to input the purge gas into the purge space.

[0023] Optionally, the gas inlet flange assembly comprises a wafer transfer port corresponding to the reaction space in the reaction chamber, and the main reaction gas nozzle communicates with the wafer transfer port.

[0024] Optionally, the gas inlet flange assembly comprises a wafer transfer port corresponding to the purge space in the reaction chamber.

[0025] Optionally, it further comprises:

[0026] A second gas flow guide assembly is located above the gas inlet partition plate, and the second gas flow guide assembly comprises a plurality of main reaction gas flow guide pipes, which extend from the gas inlet flange assembly to the wafer processing area along the longitudinal direction. The gas flowing through the main reaction gas flow guide pipe mixes with the auxiliary gas flowing upward through the gas inlet partition plate and reaches the wafer processing area.

[0027] Optionally, the end surface of the second gas flow guide assembly away from the gas inlet flange assembly is arranged in concentric circles with the wafer to be processed.

[0028] Optionally, the exhaust port of the auxiliary gas inlet channel is conical, circular, elliptical or square.

[0029] Optionally, the gas inlet flange assembly comprises a groove structure, and one end of the gas flow guide assembly is arranged in the groove structure so that the auxiliary gas flow guide pipe is in communication with the auxiliary gas nozzle.

[0030] Optionally, the gas flow guide assembly is integrally formed with the gas inlet baffle.

[0031] Optionally, the main reaction gas comprises a silicon source gas and / or a chlorine-containing gas.

[0032] And / or, the auxiliary gas is a phosphorus-containing and / or boron-containing and / or germanium-containing precursor gas.

[0033] Optionally, a processing method of the thin film processing device comprises:

[0034] The main reaction gas is provided to the reaction space through the main reaction gas nozzle of the gas inlet flange assembly, and the auxiliary gas is provided to the reaction space through the auxiliary gas nozzle of the gas inlet flange assembly, the auxiliary gas flow guide pipe of the gas flow guide assembly and the auxiliary gas inlet channel of the gas inlet baffle, and the auxiliary gas is mixed with the main reaction gas in the reaction space.

[0035] The thin film deposition process is performed.

[0036] Compared with the prior art, the present application has the following advantages:

[0037] In the thin film processing device and the method thereof, the device combines the gas inlet flange assembly, the gas flow guide assembly and the gas inlet baffle, transports the main reaction gas to the upper side of the gas inlet baffle through the main reaction gas channel and the main reaction gas nozzle of the gas inlet flange assembly, and transports the auxiliary gas to the upper side of the gas inlet baffle through the auxiliary gas nozzle of the gas inlet flange assembly, the auxiliary gas flow guide pipe of the gas flow guide assembly and the exhaust port of the auxiliary gas inlet channel of the gas inlet baffle, so that the two gases start the mixing process before entering the wafer processing area, the independent regulation of the auxiliary gas in each auxiliary gas flow guide pipe is combined to realize the accurate regulation of the uniformity of the mixed gas composition, which is beneficial to obtain better film deposition uniformity and film quality. BRIEF DESCRIPTION OF DRAWINGS

[0038] Figure 1 The figure is a schematic diagram of the thin film processing device of the first embodiment of the present application;

[0039] Figure 2 The figure is a sectional view of the gas inlet flange assembly of the first embodiment of the present application;

[0040] Figure 3This is a top view of the gas guiding component and wafer portion according to Embodiment 1 of the present invention;

[0041] Figure 4 This is a schematic diagram of the thin film processing apparatus according to Embodiment 2 of the present invention;

[0042] Figure 5 This is a cross-sectional schematic diagram of the air inlet flange assembly according to Embodiment 2 of the present invention. Detailed Implementation

[0043] To make the objectives, technical solutions, and advantages of the embodiments of the present invention clearer, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0044] It should be noted that, in this document, the terms "comprising," "including," "having," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or terminal device that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or terminal device. Unless otherwise specified, an element defined by the phrase "comprising..." or "including..." does not exclude the presence of additional elements in the process, method, article, or terminal device that includes said element.

[0045] It should be noted that the accompanying drawings are all in a very simplified form and use non-precise ratios, and are only used to facilitate and clearly illustrate the purpose of one embodiment of the present invention.

[0046] Example 1

[0047] like Figures 1-3 The diagram illustrates a thin-film processing apparatus (chemical vapor deposition, CVD) according to the present invention. The apparatus includes an elongated reaction chamber 100, which can be used to process one or more wafers W, including depositing material on the upper surface of the wafers W. The reaction chamber 100 is surrounded by a top wall 101 at the top, a bottom wall 102 at the bottom, and sidewalls extending on both sides between the top wall 101 and the bottom wall 102. Optionally, the top wall 101 and the bottom wall 102 are made of an optically transparent or translucent material that is transparent to thermal energy (such as quartz material that is transparent to a specific infrared band).

[0048] The reaction chamber 100 further comprises an inlet end opening 103 and an outlet end opening 104, and an inlet partition 105 and an outlet partition 106 are respectively arranged near the inlet end opening 103 and the outlet end opening 104 in the reaction chamber 100, which divide the reaction chamber 100 into an upper reaction space A and a lower purification space B. Further, the inlet partition 105 is above an inlet area, and the outlet partition 106 is above an outlet area, and a wafer processing area between the inlet area and the outlet area is used to accommodate a susceptor 110 carrying a wafer W to perform a thin film deposition process. Process gas for deposition flows into the reaction chamber 100 from the inlet end opening 103, performs a thin film deposition process in the wafer processing area, and is discharged from the reaction chamber 100 from the outlet end opening 104. In this embodiment, the longitudinal reaction chamber 100 is an integrated reaction chamber made of quartz, and the transverse width of the inlet end opening 103 and the outlet end opening 104 is greater than the height of the reaction chamber 100.

[0049] In this embodiment, the susceptor 110 comprises a wafer carrying platform 111 and a support frame 112, the front surface of the wafer carrying platform 111 is used to carry one or more wafers W performing a thin film deposition process, and the support frame 112 is arranged below the wafer carrying platform 111 and is used to support the wafer carrying platform 111. The support frame 112 can be made of a non-metal material (such as quartz) to reduce the risk of contamination. A preheating ring 107 is arranged around the outside of the wafer carrying platform 111 to preheat the process gas delivered to the inlet area. A radiation heating source, typically a high-power heating lamp group, is further arranged above the top wall 101 and below the bottom wall 102. The heating lamp group below the bottom wall 102 is used to heat the wafer carrying platform 111 and indirectly heat the wafer W above the wafer carrying platform 111, and the heating lamp group above the top wall 101 is used to heat the wafer W and the preheating ring 107 around the wafer W, and also preheat the reaction gas entering the inlet area of the reaction chamber 100.

[0050] As Figure 1As shown, the thin film processing apparatus further comprises an inlet flange assembly 120 disposed at the inlet end opening 103. The inlet flange assembly 120 is provided with a plurality of main reaction gas passages 121 for delivering main reaction gas. The main reaction gas passages 121 comprise main reaction gas nozzles 122 corresponding to the reaction space A for spraying main reaction gas downward to the wafer processing region. In the present embodiment, the inlet flange assembly 120 further comprises wafer transfer ports 123 corresponding to the reaction space A in the reaction chamber 100. The main reaction gas nozzles 122 are in communication with the wafer transfer ports 123. Main reaction gas is delivered to the main reaction gas nozzles 122 through the main reaction gas passages 121, and then enters the reaction space A from the wafer transfer ports 123.

[0051] Further, the inlet flange assembly 120 further comprises auxiliary gas nozzles 124 disposed below the main reaction gas nozzles 122, which correspond to the purge space B. The inlet baffle 105 further comprises a gas flow guide assembly 130 below the inlet baffle 105. The gas flow guide assembly 130 comprises a plurality of auxiliary gas flow guide pipes 131 extending in the longitudinal direction. The auxiliary gas flow guide pipes 131 are disposed between the auxiliary gas nozzles 124 and the wafer processing region. The flow in the plurality of auxiliary gas flow guide pipes 131 is independently adjustable. The auxiliary gas flow guide pipes 131 are in communication with above the inlet baffle 105 through auxiliary gas inlet passages 1051 disposed on the inlet baffle 105. Auxiliary gas sequentially enters above the inlet baffle 105 through the auxiliary gas nozzles 124 of the inlet flange assembly 120, the auxiliary gas flow guide pipes 131 of the gas flow guide assembly 130, and the exhaust ports 1052 of the auxiliary gas inlet passages 1051 of the inlet baffle 105. The auxiliary gas and the main reaction gas above the inlet baffle 105 are mixed, and then the thin film deposition process is performed above the wafer W.

[0052] As known from the above, the gas flow of the main reaction gas is located above the gas flow of the auxiliary gas before the main reaction gas and the auxiliary gas start to mix. The auxiliary gas enters the gas flow of the main reaction gas without affecting the main reaction gas inlet, and the gas distribution of the mixed gas in the wafer processing area is adjusted by regulating the auxiliary gas. According to the requirements of the process conditions, the gas flow of the auxiliary gas in each auxiliary gas guide pipe 131 is adjusted to flexibly control the uniformity of the components of the mixed gas in the wafer processing area, to realize the accurate regulation of the process gas flow field above the wafer W, which helps to obtain a uniform component epitaxial layer film. On the other hand, the main reaction gas and the auxiliary gas start to mix before entering the wafer processing area, which can have a certain degree of mixing when reaching the wafer W, and the component distribution cannot be controlled due to excessive diffusion area. The above structure can realize the controllable regulation of the mixed gas components in the process to obtain a film with better component uniformity and ensure the yield of the wafer W production.

[0053] Optionally, the main reaction gas channel 121 and / or the auxiliary gas guide pipe 131 and / or the auxiliary gas inlet channel 1051 is provided with a transversely expanded gas uniformizing chamber 125 to buffer the gas transported by the channel. A plurality of main reaction gas channels 121 or auxiliary gas guide pipes 131 or auxiliary gas inlet channels 1051 can be alternately arranged and processed according to actual requirements.

[0054] In an embodiment, the gas inlet flange assembly 120 comprises a groove structure, and one end of the gas guide assembly 130 is arranged in the groove structure, so that the first end of the auxiliary gas guide pipe 131 is in communication with the auxiliary gas nozzle 124 of the gas inlet flange assembly 120. The second end of the auxiliary gas guide pipe 131 is in communication with the auxiliary gas inlet channel 1051 of the gas inlet partition plate 105 to transport the auxiliary gas above the gas inlet partition plate 105. In another embodiment, the gas guide assembly 130 and the gas inlet partition plate 105 are an integral structure (integrally formed) to reduce the possibility of gas leakage between the components and avoid disturbing the environment of the reaction chamber 100.

[0055] Optionally, the gas inlet flange assembly 120 is made of a metal material, and the gas guide assembly 130 is made of quartz or alumina or titanium oxide or graphite, etc. The present application does not limit this as long as it does not affect the vacuum environment in the reaction chamber 100.

[0056] In the embodiment, the auxiliary gas is a gas for doping (for example, a phosphorus-containing precursor gas), and the flow rate of the main reaction gas is greater than the flow rate of the auxiliary gas, that is, only a small amount of the doping gas needs to be mixed in the mixed gas required by the process. Since the doping gas is closer to the edge region of the wafer W than the main reaction gas, the distribution of the doping gas on the surface of the wafer W in the process can be controlled and adjusted, and better film uniformity and film quality can be obtained. Optionally, the main reaction gas is a silicon source gas and / or a chlorine-containing gas; the auxiliary gas is a phosphorus-containing and / or boron-containing and / or germanium-containing precursor gas, and the main reaction gas and the auxiliary gas can also contain other types of gas components according to actual process requirements.

[0057] In the embodiment, the end surface of the gas flow guide assembly 130 away from the auxiliary gas nozzle 124 is arranged in a concentric circle with the wafer W to be processed (see Figure 1 and Figure 3 ), and the gas outlets of the auxiliary gas flow guide pipes 131 are uniformly distributed along one side of the wafer W to be processed. Further, the exhaust ports 1052 of each auxiliary gas inlet passage 1051 of the gas inlet partition plate are uniformly distributed along one side of the wafer W to be processed, that is, the distance from the exhaust ports 1052 to the edge of the wafer W is the same, so that the mixing path length of the auxiliary gas (doping gas) transported by the auxiliary gas flow guide pipes 131 and the auxiliary gas inlet passages 1051 and the main reaction gas in the reaction chamber 100 is equivalent, which is helpful for accurate regulation of the uniformity of the mixed gas components. This mode is preferably suitable for thin film deposition processes with only one type of doping gas.

[0058] Of course, the distance from the exhaust ports 1052 of each auxiliary gas inlet passage 1051 to the wafer processing area can also be different, and the present application does not limit this. For example, in another embodiment, the distances from the exhaust ports 1052 of the plurality of auxiliary gas inlet passages 1051 on the gas inlet partition plate 105 to the wafer processing area are different, that is, the distances from the exhaust ports 1052 to the edge of the wafer W are different, so that the path lengths of the mixing of the auxiliary gas and the main reaction gas are different. According to the actual required mixing degree and process condition requirements, different auxiliary gas inlet passages 1051 and auxiliary gas flow guide pipes 131 connected thereto are selected to form an expected mixed gas flow layer on the surface of the wafer W, and then a high-quality epitaxial layer film is obtained through a thin film deposition process. Optionally, the exhaust ports 1052 of the auxiliary gas inlet passages 1051 are conical or circular or elliptical or square, which can be selected and processed according to actual needs.

[0059] Further, the outlet direction of the auxiliary gas inlet channel 1051 is vertically upward or inclined toward the wafer processing area, that is, the auxiliary gas in the reaction space A has an angle with the main reaction gas, so that the two gases are quickly mixed in the reaction space A. Compared with the parallel delivery direction, the angle between the delivery directions of the main reaction gas and the doping gas in the present application helps the rapid mixing of various gases in the reaction chamber 100, so that the wafer processing area obtains a reaction gas flow field with higher mixing degree and more uniform distribution of gas components, improves the control accuracy of the process, and accurately regulates the process.

[0060] As shown in Figure 1 The gas flow guide assembly 130 also includes a second auxiliary gas flow guide pipe 132 for providing a purge gas, and the outlet of the second auxiliary gas flow guide pipe 132 is located below the gas inlet partition plate 105 and towards the purge space B below the wafer processing area, so as to input the purge gas into the purge space B, which is uniformly distributed in the width direction of the chamber. Further, in this embodiment, another path of purge gas is provided along the support frame 112 of the pedestal 110, which is uniformly distributed in the vertical direction of the chamber, and the two paths of purge gas work together to protect the purge space B during the process, prevent the process gas from diffusing downward to the purge space B, and reduce the generation of by-products.

[0061] Based on the same inventive concept, the present application also provides a processing method of the thin film processing device, which comprises: S1, providing the main reaction gas to the reaction space A through the main reaction gas nozzle 122 of the gas inlet flange assembly 120, and providing the auxiliary gas to the reaction space A through the auxiliary gas nozzle 124 of the gas inlet flange assembly 120, the auxiliary gas flow guide pipe 131 of the gas flow guide assembly 130, and the auxiliary gas inlet channel 1051 of the gas inlet partition plate 105, wherein the auxiliary gas is mixed with the main reaction gas in the reaction space A; S2, performing a thin film deposition process.

[0062] Embodiment two

[0063] Based on the structural characteristics of the thin film processing device of embodiment one, some changes are made to the gas inlet flange assembly 220 in this embodiment. As shown in Figure 4 and As shown in Figure 5 The structure of the thin film processing device of this embodiment is shown.

[0064] In the embodiment, the gas inlet flange assembly 220 comprises a wafer transfer port 223 corresponding to the clean space B in the reaction chamber 200. The pedestal 210 comprises a wafer carrier 211 carrying the wafer W and a support frame 212 supporting the wafer carrier 211. The pedestal 210 can be lowered from the wafer processing area in the reaction space A to the clean space B, so that the wafer W on the pedestal 210 can be transferred to the outside space of the reaction chamber 200 by the robot.

[0065] In the process state, the wafer carrier 211 is at the same level as the gas inlet partition 205 and the gas outlet partition 206 to isolate the reaction space A and the clean space B, and the two spaces are independent of each other to avoid affecting the film deposition process of the wafer W. After the wafer W film processing process is completed, the height of the wafer carrier 211 of the pedestal 210 is lowered, so that the wafer carrier 211 together with the wafer W thereon is located in the clean space B, so that the wafer W can be transferred by the robot. The wafer W is picked up and transferred in the clean space B below the wafer processing area, avoiding contamination of the wafer processing area by the robot during wafer transfer, which helps to maintain the cleanliness of the wafer processing area, further ensures that the wafer W will not be contaminated by particles or other metals during the process, and ensures the quality of the wafer W film deposition.

[0066] As shown in Figure 4 The main reaction gas channel 221 formed in the gas inlet flange assembly 220 comprises a vertical channel and a horizontal channel in communication. The port of the horizontal channel is the main reaction gas nozzle 222 corresponding to the reaction space A for conveying the main reaction gas.

[0067] Further, the film processing device of the embodiment further comprises a second gas flow guide assembly 240 located above the gas inlet partition 205. The second gas flow guide assembly 240 comprises a plurality of main reaction gas flow guide pipes 241 in communication with the main reaction gas nozzle 222. The main reaction gas flow guide pipes 241 extend from the gas inlet flange assembly 220 to the wafer processing area in the longitudinal direction. The gas flowing through the main reaction gas flow guide pipes 241 mixes with the auxiliary gas flowing upward through the gas inlet partition 205 and reaches the wafer processing area.

[0068] The extension length of the main reaction gas guide pipe 241 is less than that of the auxiliary gas guide pipe 231 of the gas guide assembly 230, that is, the main reaction gas first diffuses in the wafer W direction in the gas inlet area of the reaction space A, and the auxiliary gas is mixed with the main reaction gas in the diffusion process, so as to flexibly control the process gas distribution in the wafer processing area, realize accurate adjustment of the mixed gas flow and mixed ratio distribution in the wafer processing area, make the gas enter the reaction chamber 200 in a way beneficial to the process without damaging the vacuum degree, and improve the component uniformity of film formation. Optionally, the second gas guide assembly 240 of the embodiment can also be applied to the thin film processing device of the first embodiment (the shape of the main reaction gas guide pipe 241 can be changed according to needs), and the present application does not limit this. The extension length of the main reaction gas guide pipe 241 can also be greater than that of the auxiliary gas guide pipe 231. In this design scheme, the auxiliary gas in each auxiliary gas guide pipe 231 passes through the gas inlet partition plate 205 to enter the inside of the main reaction gas guide pipe 241, and the two gases are mixed and flow for a short distance and then diffuse around the outlet end of the main reaction gas guide pipe 241. This structure also belongs to a variant embodiment of the present application.

[0069] Further, the end surface of the second gas guide assembly 240 away from the main reaction gas nozzle 222 is arranged as a concentric circle with the wafer W to be processed, and the gas outlets of each main reaction gas guide pipe 241 are uniformly distributed along one side of the wafer W to be processed, so that the main reaction gas delivered by the main reaction gas guide pipe 241 is uniformly distributed in the reaction space A. At the same time, the main reaction gas delivered by each main reaction gas guide pipe 241 has similar walking path length in the reaction chamber 200, which is helpful for the regulation of the main reaction gas for subsequent mixing with the auxiliary gas.

[0070] In addition, other structures and the action mode of each component of the embodiment, such as the specific setting and action mode of the gas guide assembly 230, the second auxiliary gas guide pipe 232 for providing purifying gas, etc. can be the same as those in the first embodiment, and will not be repeated here.

[0071] In summary, in the thin film processing device and method thereof, the device combines the gas inlet flange assembly 120, the gas flow guide assembly 130 and the gas inlet partition 105, and transports the main reaction gas to the upper side of the gas inlet partition 105 through the main reaction gas channel 121 and the main reaction gas nozzle 122 of the gas inlet flange assembly 120, and transports the auxiliary gas to the upper side of the gas inlet partition 105 through the auxiliary gas nozzle 124 of the gas inlet flange assembly 120, the auxiliary gas flow guide channel 131 of the gas flow guide assembly 130 and the auxiliary gas inlet channel 1051 and the exhaust port 1052 of the gas inlet partition 105, so that the mixing process of the two kinds of gases starts before entering the wafer processing area, and the independent regulation of the auxiliary gas in each auxiliary gas flow guide channel 131 is combined to realize the accurate regulation of the uniformity of the mixed gas composition, which is beneficial to obtain better film deposition uniformity and film quality.

[0072] Further, the gas flow guide assembly 130 in the device includes a second auxiliary gas flow guide channel 132 for providing purge gas, and the purge flow in the direction of the support frame 112 of the pedestal 110 is combined, and the two paths of the purge gas work together to realize the protection of the purification space B in the process, prevent the process gas in the reaction space A from diffusing downward to the purification space B, and reduce the generation of by-products.

[0073] Further, the second gas flow guide assembly 240 in the device is combined with the gas flow guide assembly 230, and the diffusion path length of the main reaction gas and the auxiliary gas in the reaction space A and the mixing path length of the two kinds of gases are controlled respectively to accurately adjust the mixed gas flow and the mixed ratio distribution in the wafer processing area, realize the accurate control of the distribution uniformity and the component uniformity of the mixed gas in the wafer processing area, and improve the quality of the wafer W film deposition.

[0074] Although the content of the present application has been described in detail through the above preferred embodiments, it should be recognized that the above description should not be considered as a limitation of the present application. After reading the above content, various modifications and alternatives of the present application will be obvious to those skilled in the art. Therefore, the protection scope of the present application should be defined by the appended claims.

Claims

1. A thin film processing apparatus, characterized by, The film processing device comprises: a longitudinal reaction chamber surrounded by a reaction chamber top wall, a bottom wall and two side walls, and further comprising an inlet end opening and an exhaust end opening; a gas inlet baffle and a gas exhaust baffle are respectively arranged near the inlet end opening and the exhaust end opening in the reaction chamber, so as to divide the reaction chamber into an upper reaction space and a lower purification space; an inlet area is arranged above the gas inlet baffle, and an exhaust area is arranged above the gas exhaust baffle, and a wafer processing area between the inlet area and the exhaust area is used to accommodate a susceptor carrying a wafer to perform a thin film deposition process; a gas inlet flange assembly is arranged at the inlet end opening, and the gas inlet flange assembly comprises a plurality of main reaction gas nozzles corresponding to the reaction space, so as to spray main reaction gas to the downstream wafer processing area; the gas inlet flange assembly further comprises an auxiliary gas nozzle arranged below the main reaction gas nozzle and corresponding to the purification space; the gas inlet baffle further comprises a gas flow guide assembly below the gas inlet baffle, and the gas flow guide assembly comprises a plurality of first auxiliary gas flow guide pipes extending along the longitudinal direction, the first auxiliary gas flow guide pipes are arranged between the auxiliary gas nozzle and the wafer processing area, and the gas flow in the plurality of first auxiliary gas flow guide pipes is independently adjustable; the first auxiliary gas flow guide pipes are connected to the gas inlet baffle above through auxiliary gas inlet channels arranged on the gas inlet baffle, and the exhaust port of the auxiliary gas inlet channel is located on the upper surface of the gas inlet baffle; auxiliary gas is introduced into the reaction space above the gas inlet baffle through the auxiliary gas nozzle of the gas inlet flange assembly, the first auxiliary gas flow guide pipes of the gas flow guide assembly, the auxiliary gas inlet channels of the gas inlet baffle and the exhaust port, and there is an included angle between the entering direction of the auxiliary gas and the conveying direction of the main reaction gas in the reaction space.

2. The film processing device according to claim 1, wherein: the flow rate of the main reaction gas is greater than that of the auxiliary gas.

3. The film processing device according to claim 1, wherein: the end surface of the gas flow guide assembly away from the auxiliary gas nozzle is arranged in a concentric circle with the wafer to be processed; the distances from the exhaust ports of the auxiliary gas inlet channels of the gas inlet baffle to the wafer processing area are the same.

4. The film processing device according to claim 1, wherein: the distances from the exhaust ports of the auxiliary gas inlet channels of the gas inlet baffle to the wafer processing area are different.

5. The film processing device according to claim 1, wherein: the gas outlet direction of the auxiliary gas inlet channel is vertically upward or inclined toward the wafer processing area.

6. The film processing device according to claim 1, wherein: the gas outlet ports of the first auxiliary gas flow guide pipes are uniformly distributed along one side of the wafer to be processed.

7. The film processing device according to claim 1, wherein: the gas inlet flange assembly is provided with a plurality of main reaction gas channels, and the main reaction gas reaches the main reaction gas nozzle through the main reaction gas channels; the main reaction gas channels and / or the first auxiliary gas flow guide pipes and / or the auxiliary gas inlet channels are provided with a uniform gas chamber.

8. The thin film processing apparatus of claim 1, wherein: the gas flow guide assembly further comprises a second auxiliary gas flow guide pipe to provide a purge gas, the gas outlet of the second auxiliary gas flow guide pipe is located below the gas inlet baffle and towards a purge space below the wafer processing area to input the purge gas to the purge space.

9. The thin film processing apparatus of claim 1, wherein: the gas inlet flange assembly comprises a wafer transfer port corresponding to a reaction space in the reaction chamber, and the main reaction gas nozzle is in communication with the wafer transfer port.

10. The thin film processing apparatus of claim 1, wherein: the gas inlet flange assembly comprises a wafer transfer port corresponding to a purge space in the reaction chamber.

11. The thin film processing apparatus of claim 1 or 10, wherein Further comprising: a second gas flow guide assembly located above the gas inlet baffle, the second gas flow guide assembly comprises a plurality of main reaction gas flow guide pipes extending in the longitudinal direction from the gas inlet flange assembly to the wafer processing area, the gas flowing through the main reaction gas flow guide pipes mixes with the auxiliary gas flowing upwards through the gas inlet baffle from the first auxiliary gas flow guide pipe to reach the wafer processing area.

12. The thin film processing apparatus of claim 11, wherein: the end surface of the second gas flow guide assembly away from the gas inlet flange assembly is concentrically arranged with the wafer to be processed.

13. The thin film processing apparatus of claim 1, wherein: the gas outlet of the auxiliary gas inlet channel is conical or circular or elliptical or square.

14. The thin film processing apparatus of claim 1, wherein: the gas inlet flange assembly comprises a recess structure, one end of the gas flow guide assembly is arranged in the recess structure to make the first auxiliary gas flow guide pipe in communication with the auxiliary gas nozzle.

15. The thin film processing apparatus of claim 1, wherein: the gas flow guide assembly is integrally formed with the gas inlet baffle.

16. The thin film processing apparatus of claim 1, wherein: the main reaction gas comprises a silicon source gas and / or a chlorine-containing gas; and / or, the auxiliary gas is a phosphorus-containing and / or boron-containing and / or germanium-containing precursor gas.

17. A processing method of the thin film processing apparatus as claimed in any one of claims 1 to 16, characterized by, Comprising: providing the main reaction gas to the reaction space through the main reaction gas nozzle of the gas inlet flange assembly, providing the auxiliary gas to the reaction space through the auxiliary gas nozzle of the gas inlet flange assembly, the first auxiliary gas flow guide pipe of the gas flow guide assembly, and the auxiliary gas inlet channel of the gas inlet baffle, the auxiliary gas mixes with the main reaction gas in the reaction space; performing a thin film deposition process.

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