A semiconductor laser element with a hyperbolic dispersion layer

Abstract

The present invention discloses a semiconductor laser element with a hyperbolic dispersion layer, which relates to the technical field of semiconductor optoelectronic devices; in order to solve the defect problems existing in all-solid-state semiconductor lasers in the prior art; it sequentially includes a substrate, a lower confinement layer, a lower waveguide layer, an active layer, an upper waveguide layer, an electron blocking layer and an upper confinement layer from bottom to top, and hyperbolic dispersion layers are provided between the lower confinement layer and the lower waveguide layer, between the lower waveguide layer and the active layer, and between the upper waveguide layer and the active layer. The present invention can regulate the hyperbolic dispersion of two-dimensional polariton wave packets, reduce the leakage of the optical field mode to the substrate, suppress the substrate mode, improve the ripples appearing in the far-field image FFP of the laser, form single-mode laser emission, and reduce the optical absorption of the upper waveguide layer and the lower waveguide layer, reduce the internal optical loss, enhance the hole injection efficiency, improve the electrical lasing gain, reduce the excitation threshold and gain uniformity of the laser element, and enhance the confinement factor.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor optoelectronic devices, and particularly to a semiconductor laser element with a hyperbolic dispersion layer. Background Art

[0002] Lasers include types such as solid-state, gas, liquid, semiconductor, and dye lasers, and are widely used in fields such as laser display, laser television, laser projectors, communication, medical treatment, weapons, guidance, ranging, and spectral analysis.

[0003] The existing all-solid-state semiconductor lasers such as nitride semiconductor lasers have the following problems: 1) large internal lattice mismatch and large strain cause strong polarization effects, and the strong QCSE (Quantum Confined Stark Effect) limits the improvement of the electrical lasing gain of the laser; 2) high optical waveguide absorption loss, and the inherent carbon impurities in the p-type semiconductor will compensate for acceptors and damage the p-type, etc., and the ionization rate of p-type doping is low. A large number of un-ionized Mg acceptor impurities will cause an increase in internal optical loss;

[0004] 3) Increasing the thickness of the lower confinement layer can reduce the refractive index of the confinement layer, but increasing the thickness of the lower confinement layer will also lead to a limited composition regulation range, and problems such as cracking, bending, and quality degradation are likely to occur; at the same time, the leakage of the optical field mode to the substrate to form a standing wave will result in low substrate mode suppression efficiency and poor far-field image FFP quality; 4) The Mg acceptor activation energy of the p-type semiconductor is large and the ionization efficiency is low. The hole concentration is much lower than the electron concentration, and the hole mobility is much smaller than the electron mobility, resulting in serious asymmetry and mismatch of electrons and holes in the quantum well, electron leakage and carrier delocalization, making it more difficult for holes to transport in the quantum well, uneven carrier injection, uneven gain, broadening of the laser gain spectrum, and a decrease in peak gain.

[0005] Based on this, we propose a semiconductor laser element with a hyperbolic dispersion layer. Summary of the Invention

[0006] The purpose of the present invention is to solve the shortcomings existing in the prior art, and to propose a semiconductor laser element with a hyperbolic dispersion layer.

[0007] In order to achieve the above purpose, the present invention adopts the following technical solutions:

[0008] A semiconductor laser element with a hyperbolic dispersion layer, which sequentially includes a substrate, a lower confinement layer, a lower waveguide layer, an active layer, an upper waveguide layer, an electron blocking layer, and an upper confinement layer from bottom to top. Hyperbolic dispersion layers are provided between the lower confinement layer and the lower waveguide layer, between the lower waveguide layer and the active layer, and between the upper waveguide layer and the active layer;

[0009] The hyperbolic dispersion layer is one of ZiNiSn, MnTe, CrI3, BiSbTe, CoSb3, Cr2Ge2Te6, or is one of binary combinations, ternary combinations, quaternary combinations, quinary combinations and senary combinations including heterojunctions, superlattices, quantum wells, core-shell structures, quantum dots, two-dimensional moiré superlattice structures;

[0010] The thickness of the hyperbolic dispersion layer is 0.5 - 500 nm.

[0011] Preferably, the binary combinations of the hyperbolic dispersion layer include the following structures: ZiNiSn / MnTe, ZiNiSn / CrI3, ZiNiSn / BiSbTe, ZiNiSn / CoSb3, ZiNiSn / Cr2Ge2Te6, MnTe / CrI3, MnTe / BiSbTe, MnTe / CoSb3, MnTe / Cr2Ge2Te6, CrI3 / BiSbTe, CrI3 / CoSb3, CrI3 / Cr2Ge2Te6, BiSbTe / CoSb3, BiSbTe / Cr2Ge2Te6, CoSb3 / Cr2Ge2Te6.

[0012] Preferably, the ternary combinations of the hyperbolic dispersion layer include the following structures:

[0013] ZiNiSn / MnTe / CrI3, ZiNiSn / MnTe / BiSbTe, ZiNiSn / MnTe / CoSb3, ZiNiSn / MnTe / Cr2Ge2Te6, ZiNiSn / CrI3 / BiSbTe, ZiNiSn / CrI3 / CoSb3,

[0014] ZiNiSn / CrI3 / Cr2Ge2Te6, ZiNiSn / BiSbTe / CoSb3,

[0015] ZiNiSn / BiSbTe / Cr2Ge2Te6, MnTe / CrI3 / BiSbTe, MnTe / CrI3 / CoSb3, MnTe / CrI3 / Cr2Ge2Te6, MnTe / BiSbTe / CoSb3, MnTe / BiSbTe / Cr2Ge2Te6, MnTe / CoSb3 / Cr2Ge2Te6, CrI3 / BiSbTe / CoSb3, CrI3 / BiSbTe / Cr2Ge2Te6, CrI3 / BiSbTe / Cr2Ge2Te6, BiSbTe / CoSb3 / Cr2Ge2Te6.

[0016] Preferably, the quaternary combination of the hyperbolic dispersion layer includes the following structures: ZiNiSn / MnTe / CrI3 / BiSbTe, ZiNiSn / MnTe / CrI3 / CoSb3, ZiNiSn / MnTe / CrI3 / Cr2Ge2Te6, ZiNiSn / CrI3 / BiSbTe / CoSb3, ZiNiSn / CrI3 / BiSbTe / Cr2Ge2Te6, ZiNiSn / BiSbTe / CoSb3 / Cr2Ge2Te6, MnTe / CrI3 / BiSbTe / CoSb3, MnTe / CrI3 / BiSbTe / Cr2Ge2Te6, MnTe / BiSbTe / CoSb3 / Cr2Ge2Te6, CrI3 / BiSbTe / CoSb3 / Cr2Ge2Te6.

[0017] Preferably, the quinary combination of the hyperbolic dispersion layer includes the following structures:

[0018] ZiNiSn / MnTe / CrI3 / BiSbTe / CoSb3,

[0019] ZiNiSn / MnTe / CrI3 / BiSbTe / Cr2Ge2Te6,

[0020] ZiNiSn / MnTe / CrI3 / CoSb3 / Cr2Ge2Te6,

[0021] ZiNiSn / MnTe / BiSbTe / CoSb3 / Cr2Ge2Te6,

[0022] ZiNiSn / CrI3 / BiSbTe / CoSb3 / Cr2Ge2Te6, MnTe / CrI3 / BiSbTe / CoSb3 / Cr2Ge2Te6;

[0023] The hexary combination of the hyperbolic dispersion layer includes the following structure:

[0024] ZiNiSn / MnTe / CrI3 / BiSbTe / CoSb3 / Cr2Ge2Te6.

[0025] Preferably, the substrate is one of sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, sapphire / SiO2 composite substrate, sapphire / AlN composite substrate, sapphire / SiNx, sapphire / SiO2 / SiNx composite substrate, magnesium aluminate spinel MgAl2O4, MgO, ZnO, ZrB2, LiAlO2 and LiGaO2 composite substrate.

[0026] Preferably, the lower confinement layer is one or any combination of GaN, AlGaN, InGaN, AlInGaN, AlN, InN, and AlInN;

[0027] The thickness of the lower confinement layer is 5 - 5000 nm, and the Si doping concentration is 1E18 - 1E20 cm-3.

[0028] Preferably, both the lower waveguide layer and the upper waveguide layer are one or any combination of GaN, InGaN, and AlInGaN;

[0029] The thicknesses of both the lower waveguide layer and the upper waveguide layer are 5 - 1000 nm, and the Si doping concentration is 1E16 - 5E19 cm-3.

[0030] Preferably, both the electron blocking layer and the upper confinement layer are one or any combination of GaN, AlGaN, AlInGaN, AlN, and AlInN;

[0031] The thicknesses of both the electron blocking layer and the upper confinement layer are 2 - 1000 nm, and the Mg doping concentration is 1E18 - 1E20 cm-3.

[0032] Preferably, the active layer is a periodic structure composed of well layers and barrier layers. The well layer is an InGaN well layer, and the barrier layer is one or any combination of GaN, AlInGaN, AlGaN, and AlInN;

[0033] The number of periods of the active layer is m: 4 ≥ m ≥ 1.

[0034] The beneficial effects of the present invention are as follows:

[0035] 1. The hyperbolic dispersion layer in the present invention has a negative refractive index and effective Hawking radiation, can regulate the hyperbolic dispersion of two-dimensional polariton wave packets, reduce the leakage of the optical field mode to the substrate, suppress the substrate mode, improve the ripples in the far-field image FFP of the laser, form single-mode laser emission, reduce the light absorption of the upper waveguide layer and the lower waveguide layer, reduce the internal optical loss, enhance the hole injection efficiency, improve the electrical lasing gain, reduce the excitation threshold and gain uniformity of the laser element, enhance the confinement factor, and improve the optical power and slope efficiency of the laser element. Description of the Drawings

[0036] FIG. 1 is a

[0037] structural schematic diagram of a semiconductor laser element with a hyperbolic dispersion layer proposed by the present invention.

[0038] In the figure: 1 substrate, 2 lower confinement layer, 3 lower waveguide layer, 4 active layer, 5 upper waveguide layer,

[0039] 6 Electron blocking layer, 7 Upper confinement layer, 8 Hyperbolic dispersion layer. Detailed implementation mode

[0040] The technical solution of this patent will be further described in detail below in conjunction with the specific implementation mode.

[0041] The embodiments of this patent will be described in detail below. The examples of the embodiments are shown in the drawings, where the same or similar reference numerals denote the same or similar elements or elements with the same or similar functions throughout. The embodiments described below by referring to the drawings are exemplary and are only used to explain this patent and should not be construed as a limitation of this patent.

[0042] Embodiment 1:

[0043] A semiconductor laser element with a hyperbolic dispersion layer, as shown in Fig. 1, sequentially includes a substrate 1, a lower confinement layer 2, a lower waveguide layer 3, an active layer 4, an upper waveguide layer 5, an electron blocking layer 6 and an upper confinement layer 7 from bottom to top. Hyperbolic dispersion layers 8 are provided between the lower confinement layer 2 and the lower waveguide layer 3, between the lower waveguide layer 3 and the active layer 4, and between the upper waveguide layer 5 and the active layer 4.

[0044] The substrate 1 is one of sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, sapphire / SiO2 composite substrate, sapphire / AlN composite substrate, sapphire / SiNx, sapphire / SiO2 / SiNx composite substrate, magnesium aluminate spinel MgAl2O4, MgO, ZnO, ZrB2, LiAlO2 and LiGaO2 composite substrate, etc.

[0045] The lower confinement layer 2 is one or any combination of GaN, AlGaN, InGaN, AlInGaN, AlN, InN, AlInN. The thickness of the lower confinement layer 2 is 5 - 5000 nm, and the Si doping concentration is 1E18 - 1E20 cm-3.

[0046] Both the lower waveguide layer 3 and the upper waveguide layer 5 are one or any combination of GaN, InGaN, AlInGaN, etc. The thicknesses of both the lower waveguide layer 3 and the upper waveguide layer 5 are 5 - 1000 nm, and the Si doping concentration is 1E16 - 5E19 cm-3.

[0047] The electron blocking layer 6 and the upper confinement layer 7 are both one or any combination of GaN, AlGaN, AlInGaN, AlN, and AlInN. The thicknesses of the electron blocking layer 6 and the upper confinement layer 7 are both 2 - 1000 nm, and the Mg doping concentration is 1E18 - 1E20 cm-3.

[0048] The active layer 4 is a periodic structure composed of well layers and barrier layers. The well layer is an InGaN well layer, and the barrier layer is one or any combination of GaN, AlInGaN, AlGaN, and AlInN.

[0049] The number of periods of the active layer is m: 4 ≥ m ≥ 1.

[0050] The hyperbolic dispersion layer 8 is one or any combination of ZiNiSn, MnTe, CrI3, BiSbTe, CoSb3, Cr2Ge2Te6, etc.

[0051] The thickness of the hyperbolic dispersion layer 8 is 0.5 - 500 nm.

[0052] In this embodiment, hyperbolic dispersion layers 8 are disposed between the lower confinement layer 2 and the lower waveguide layer 3, between the lower waveguide layer 3 and the active layer 4, and between the upper waveguide layer 5 and the active layer 4. The hyperbolic dispersion layer 8 has a negative refractive index and effective Hawking radiation, can regulate the hyperbolic dispersion of two-dimensional polariton wave packets, reduce the leakage of the optical field mode to the substrate, suppress the substrate mode, improve the ripples appearing in the far-field image FFP of the laser, form single-mode laser emission, and reduce the optical absorption of the upper waveguide layer 5 and the lower waveguide layer 3, reduce the internal optical loss, enhance the hole injection efficiency, increase the electrical laser gain, reduce the excitation threshold and gain uniformity of the laser element, enhance the confinement factor, and increase the optical power and slope efficiency of the laser element.

[0053] Embodiment 2:

[0054] A semiconductor laser element with a hyperbolic dispersion layer, as shown in Figure 1. The following improvements are made to this embodiment on the basis of Embodiment 1: The hyperbolic dispersion layer 8 includes structures such as binary-combination heterojunctions, superlattices, quantum wells, core-shell structures, quantum dots, two-dimensional Moiré superlattices, etc., but is not limited to the following structures: ZiNiSn / MnTe, ZiNiSn / CrI3,

[0055] ZiNiSn / BiSbTe, ZiNiSn / CoSb3, ZiNiSn / Cr2Ge2Te6, MnTe / CrI3,

[0056] MnTe / BiSbTe, MnTe / CoSb3, MnTe / Cr2Ge2Te6, CrI3 / BiSbTe, CrI3 / CoSb3, CrI3 / Cr2Ge2Te6, BiSbTe / CoSb3, BiSbTe / Cr2Ge2Te6, CoSb3 / Cr2Ge2Te6.

[0057] When this embodiment is in use, the hyperbolic dispersion layer 8 in this example is a binary combination.

[0058] Example 3:

[0059] A semiconductor laser element with a hyperbolic dispersion layer, as shown in Figure 1. Based on Example 1, the following improvements are made in this embodiment: The hyperbolic dispersion layer 8 includes heterojunctions, superlattices, quantum wells, core-shell structures, quantum dots, two-dimensional moiré superlattices, etc. of ternary combinations, but is not limited to the following structures: ZiNiSn / MnTe / CrI3, ZiNiSn / MnTe / BiSbTe, ZiNiSn / MnTe / CoSb3, ZiNiSn / MnTe / Cr2Ge2Te6, ZiNiSn / CrI3 / BiSbTe, ZiNiSn / CrI3 / CoSb3, ZiNiSn / CrI3 / Cr2Ge2Te6, ZiNiSn / BiSbTe / CoSb3, ZiNiSn / BiSbTe / Cr2Ge2Te6, MnTe / CrI3 / BiSbTe, MnTe / CrI3 / CoSb3,

[0060] MnTe / CrI3 / Cr2Ge2Te6, MnTe / BiSbTe / CoSb3, MnTe / BiSbTe / Cr2Ge2Te6, MnTe / CoSb3 / Cr2Ge2Te6, CrI3 / BiSbTe / CoSb3, CrI3 / BiSbTe / Cr2Ge2Te6, CrI3 / BiSbTe / Cr2Ge2Te6, BiSbTe / CoSb3 / Cr2Ge2Te6.

[0061] When this embodiment is in use, the hyperbolic dispersion layer 8 in this example is a ternary combination.

[0062] Example 4:

[0063] A semiconductor laser element with a hyperbolic dispersion layer, as shown in Figure 1. Based on Example 1, the following improvements are made in this embodiment: The hyperbolic dispersion layer 8 includes heterojunctions, superlattices, quantum wells, core-shell structures, quantum dots, two-dimensional moiré superlattices, etc. of quaternary combinations

[0064] structures, but not limited to the following structures: ZiNiSn / MnTe / CrI3 / BiSbTe,

[0065] ZiNiSn / MnTe / CrI3 / CoSb3, ZiNiSn / MnTe / CrI3 / Cr2Ge2Te6,

[0066] ZiNiSn / CrI3 / BiSbTe / CoSb3, ZiNiSn / CrI3 / BiSbTe / Cr2Ge2Te6, ZiNiSn / BiSbTe / CoSb3 / Cr2Ge2Te6, MnTe / CrI3 / BiSbTe / CoSb3, MnTe / CrI3 / BiSbTe / Cr2Ge2Te6, MnTe / BiSbTe / CoSb3 / Cr2Ge2Te6,

[0067] CrI3 / BiSbTe / CoSb3 / Cr2Ge2Te6.

[0068] When this embodiment is in use, the hyperbolic dispersion layer 8 in this example is a quaternary combination.

[0069] Example 5:

[0070] A semiconductor laser element with a hyperbolic dispersion layer, as shown in Figure 1, the following improvements are made on the basis of Embodiment 1: The hyperbolic dispersion layer 8 includes heterojunctions, superlattices, quantum wells, core-shell structures, quantum dots, two-dimensional Moiré superlattices, etc. of a quinary combination

[0071] ZiNiSn / MnTe / CrI3 / BiSbTe / Cr2Ge2Te6,

[0072] ZiNiSn / MnTe / CrI3 / CoSb3 / Cr2Ge2Te6,

[0073] ZiNiSn / MnTe / BiSbTe / CoSb3 / Cr2Ge2Te6,

[0074] ZiNiSn / CrI3 / BiSbTe / CoSb3 / Cr2Ge2Te6, MnTe / CrI3 / BiSbTe / CoSb3 / Cr2Ge2Te6.

[0075] When this embodiment is in use, the hyperbolic dispersion layer 8 in this example is a quinary combination.

[0076] Example 6:

[0077] A semiconductor laser element with a hyperbolic dispersion layer, as shown in Figure 1. In this embodiment, the following improvements are made based on Embodiment 1: The hyperbolic dispersion layer 8 includes structures such as a six-element combination of heterojunctions, superlattices, quantum wells, core-shell structures, quantum dots, two-dimensional Moiré superlattices, etc., but is not limited to the following structures:

[0078] ZiNiSn / MnTe / CrI3 / BiSbTe / CoSb3 / Cr2Ge2Te6.

[0079] When this embodiment is in use, the hyperbolic dispersion layer 8 in this example is a six-element combination.

[0080] Comparative Example 1:

[0081] The following are the average values of various data obtained from green laser experiments using the solutions of Embodiments 1-6 and the comparison data of the parameters obtained from green laser experiments using traditional lasers:

[0082]

[0083] As can be seen from the above table: Compared with the traditional laser, the beam quality factor of the laser element of the present invention is increased by 52%, the slope efficiency is increased by 61%, the threshold current density is decreased by 63%, the optical power is increased by 63%, the confinement factor is increased by 29%, and the internal optical loss is decreased by 46%.

[0084] The above is only the preferred specific implementation manner of the present invention, but the protection scope of the present invention is not limited thereto. Any person skilled in the art within the technical scope disclosed by the present invention, according to the technical solution and inventive concept of the present invention, makes equivalent substitutions or changes, and should be covered by the protection scope of the present invention.

Claims

1. A semiconductor laser element having a hyperbolic dispersion layer, which sequentially includes a substrate (1), a lower confinement layer (2), a lower waveguide layer (3), an active layer (4), an upper waveguide layer (5), an electron blocking layer (6), and an upper confinement layer (7) from bottom to top, characterized in that, A hyperbolic dispersion layer (8) is provided between the lower confinement layer (2) and the lower waveguide layer (3), between the lower waveguide layer (3) and the active layer (4), and between the upper waveguide layer (5) and the active layer (4); The hyperbolic dispersion layer (8) is one of ZiNiSn, MnTe, CrI3, BiSbTe, CoSb3, Cr2Ge2Te6, or one of binary combinations, ternary combinations, quaternary combinations, quinary combinations, and senary combinations including heterojunctions, superlattices, quantum wells, core-shell structures, quantum dots, and two-dimensional Moiré superlattice structures; The thickness of the hyperbolic dispersion layer (8) is 0.5 to 500 nm.

2. The semiconductor laser device with a hyperbolic dispersion layer according to claim 1, characterized in that, The binary combinations of the hyperbolic dispersion layer (8) include the following structures: ZiNiSn / MnTe, ZiNiSn / CrI3, ZiNiSn / BiSbTe, ZiNiSn / CoSb3, ZiNiSn / Cr2Ge2Te6, MnTe / CrI3, MnTe / BiSbTe, MnTe / CoSb3, MnTe / Cr2Ge2Te6, CrI3 / BiSbTe, CrI3 / CoSb3, CrI3 / Cr2Ge2Te6, BiSbTe / CoSb3, BiSbTe / Cr2Ge2Te6, CoSb3 / Cr2Ge2Te6.

3. A semiconductor laser device having a hyperbolic dispersion layer according to claim 2, characterized in that, The ternary combinations of the hyperbolic dispersion layer (8) include the following structures: ZiNiSn / MnTe / CrI3, ZiNiSn / MnTe / BiSbTe, ZiNiSn / MnTe / CoSb3, ZiNiSn / MnTe / Cr2Ge2Te6, ZiNiSn / CrI3 / BiSbTe, ZiNiSn / CrI3 / CoSb3, ZiNiSn / CrI3 / Cr2Ge2Te6, ZiNiSn / BiSbTe / CoSb3, ZiNiSn / BiSbTe / Cr2Ge2Te6, MnTe / CrI3 / BiSbTe, MnTe / CrI3 / CoSb3, MnTe / CrI3 / Cr2Ge2Te6, MnTe / BiSbTe / CoSb3, MnTe / BiSbTe / Cr2Ge2Te6, MnTe / CoSb3 / Cr2Ge2Te6, CrI3 / BiSbTe / CoSb3, CrI3 / BiSbTe / Cr2Ge2Te6, CrI3 / BiSbTe / Cr2Ge2Te6, BiSbTe / CoSb3 / Cr2Ge2Te6.

4. A semiconductor laser device having a hyperbolic dispersion layer according to claim 3, characterized in that, The quaternary combinations of the hyperbolic dispersion layer (8) include the following structures: ZiNiSn / MnTe / CrI3 / BiSbTe, ZiNiSn / MnTe / CrI3 / CoSb3, ZiNiSn / MnTe / CrI3 / Cr2Ge2Te6, ZiNiSn / CrI3 / BiSbTe / CoSb3, ZiNiSn / CrI3 / BiSbTe / Cr2Ge2Te6, ZiNiSn / BiSbTe / CoSb3 / Cr2Ge2Te6, MnTe / CrI3 / BiSbTe / CoSb3, MnTe / CrI3 / BiSbTe / Cr2Ge2Te6, MnTe / BiSbTe / CoSb3 / Cr2Ge2Te6, CrI3 / BiSbTe / CoSb3 / Cr2Ge2Te6.

5. A semiconductor laser device having a hyperbolic dispersion layer according to claim 4, characterized in that, The five - element combination of the hyperbolic dispersion layer (8) includes the following structures: ZiNiSn / MnTe / CrI3 / BiSbTe / CoSb3, ZiNiSn / MnTe / CrI3 / BiSbTe / Cr2Ge2Te6, ZiNiSn / MnTe / CrI3 / CoSb3 / Cr2Ge2Te6, ZiNiSn / MnTe / BiSbTe / CoSb3 / Cr2Ge2Te6, ZiNiSn / CrI3 / BiSbTe / CoSb3 / Cr2Ge2Te6, MnTe / CrI3 / BiSbTe / CoSb3 / Cr2Ge2Te6; The six - element combination of the hyperbolic dispersion layer (8) includes the following structure: ZiNiSn / MnTe / CrI3 / BiSbTe / CoSb3 / Cr2Ge2Te6.

6. A semiconductor laser device having a hyperbolic dispersion layer according to claim 1, characterized in that, The substrate (1) is one of sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, sapphire / SiO2 composite substrate, sapphire / AlN composite substrate, sapphire / SiNx, sapphire / SiO2 / SiNx composite substrate, magnesium aluminate spinel MgAl2O4, MgO, ZnO, ZrB2, LiAlO2 and LiGaO2 composite substrate.

7. The semiconductor laser device with a hyperbolic dispersion layer according to claim 6, characterized in that, The lower confinement layer (2) is one or any combination of GaN, AlGaN, InGaN, AlInGaN, AlN, InN, AlInN; The thickness of the lower confinement layer (2) is 5 - 5000 nm, and the Si doping concentration is 1E18~1E20 cm-3.

8. A semiconductor laser device having a hyperbolic dispersion layer according to claim 7, characterized in that, Both the lower waveguide layer (3) and the upper waveguide layer (5) are one or any combination of GaN, InGaN, AlInGaN; The thicknesses of both the lower waveguide layer (3) and the upper waveguide layer (5) are 5 - 1000 nm, and the Si doping concentration is 1E16~5E19 cm-3.

9. A semiconductor laser device having a hyperbolic dispersion layer according to claim 8, characterized in that, Both the electron blocking layer (6) and the upper confinement layer (7) are one or any combination of GaN, AlGaN, AlInGaN, AlN, AlInN; The thicknesses of both the electron blocking layer (6) and the upper confinement layer (7) are 2 - 1000 nm, and the Mg doping concentration is 1E18~1E20 cm-3.

10. A semiconductor laser device having a hyperbolic dispersion layer according to claim 9, characterized in that, The active layer (4) is a periodic structure composed of well layers and barrier layers. The well layer is an InGaN well layer, and the barrier layer is one or any combination of GaN, AlInGaN, AlGaN, and AlInN; The number of periods of the active layer is m: 4 ≥ m ≥ 1.

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