A semiconductor laser element having an interlayer exciton transition layer

Abstract

This invention discloses a semiconductor laser element with an interlayer exciton transition layer, relating to the field of semiconductor optoelectronic device technology. To address the defects present in current nitride semiconductor lasers, the device comprises, from bottom to top, a substrate, a lower confinement layer, a lower waveguide layer, an active layer, an upper waveguide layer, an electron blocking layer, and an upper confinement layer. Interlayer exciton transition layers are disposed between the lower waveguide layer and the active layer, and between the upper waveguide layer and the active layer. These interlayer exciton transition layers are made of Bi₂WO₆, C₃N, CsPbBr₃, BaFe₂(AsP)₂, or CdI₂-WS₂. This invention reduces internal optical losses, thereby generating exciton-induced enhanced stimulated emission of the active layer of the laser, reducing the quantum confinement Stark effect, enhancing carrier localization in the active layer, lowering the excitation threshold of the laser element, enhancing the confinement factor and electro-lasing gain, and improving the optical power and slope efficiency of the laser element.

Description

Technical Field

[0001] This invention relates to the field of semiconductor optoelectronic device technology, and in particular to a semiconductor laser element having an interlayer exciton transition layer. Background Technology

[0002] Lasers are mainly classified into solid-state, gas, liquid, semiconductor, and dye types. Compared with other types of lasers, all-solid-state semiconductor lasers have advantages such as small size, high efficiency, light weight, good stability, and long lifespan.

[0003] Current nitride semiconductor lasers suffer from the following problems: 1) Large internal lattice mismatch and strain lead to strong polarization effects, and the strong Stark effect of quantum confinement (QCSE) limits the improvement of laser electro-lasing gain; 2) High absorption loss in optical waveguides, as inherent carbon impurities in p-type semiconductors can compensate for acceptors and destroy p-type structures, and the low ionization rate of p-type doping leads to an increase in internal optical loss due to a large number of unionized Mg acceptor impurities; 3) Increasing the thickness of the lower confinement layer can reduce its refractive index, but this also limits the range of composition control. The manufacturing process is prone to problems such as cracking, bending, and quality degradation. Simultaneously, light field mode leakage into the substrate forms standing waves, leading to low substrate mode suppression efficiency and poor far-field image FFP quality. 4) The p-type semiconductor has a high Mg acceptor activation energy and low ionization efficiency, with hole concentration and mobility much lower than electron concentration and mobility, resulting in severe electron-hole asymmetry mismatch in the quantum well. This leads to electron leakage and carrier delocalization, making hole transport in the quantum well more difficult, causing non-uniform carrier injection, gain non-uniformity, broadening of the laser gain spectrum, and a decrease in peak gain. To address these issues, we propose a semiconductor laser element with an interlayer exciton transition layer. Summary of the Invention

[0004] The purpose of this invention is to address the shortcomings of existing technologies by proposing a semiconductor laser element with an interlayer exciton transition layer.

[0005] To achieve the above objectives, the present invention adopts the following technical solution:

[0006] A semiconductor laser device having an interlayer exciton transition layer comprises, from bottom to top, a substrate, a lower confinement layer, a lower waveguide layer, an active layer, an upper waveguide layer, an electron blocking layer, and an upper confinement layer. An interlayer exciton transition layer is disposed between the lower waveguide layer and the active layer, and between the upper waveguide layer and the active layer.

[0007] The interlayer exciton transition layer is one of Bi2WO6, C3N, CsPbBr3, BaFe2(AsP)2, CdI2-WS2, WSe2-MoS2, or one of binary, ternary, quaternary, pentad, and hexanal combinations including heterojunctions, superlattices, quantum wells, core-shell structures, quantum dots, and two-dimensional moiré superlattice structures.

[0008] The thickness of the interlayer exciton transition layer is 0.5–500 nm.

[0009] Preferably, the substrate is one of sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, sapphire / SiO2 composite substrate, sapphire / AlN composite substrate, sapphire / SiNx, sapphire / SiO2 / SiNx composite substrate, magnesium aluminum spinel MgAl2O4, MgO, ZnO, ZrB2, LiAlO2 and LiGaO2 composite substrate.

[0010] Preferably, the lower confining layer is one or any combination of GaN, AlGaN, InGaN, AlInGaN, AlN, InN, and AlInN;

[0011] The thickness of the lower confinement layer is 5–5000 nm, and the Si doping concentration is 1E18–1E20 cm⁻¹. -3 .

[0012] Preferably, the lower waveguide layer and the upper waveguide layer are both GaN, InGaN, AlInGaN or any combination thereof;

[0013] The thickness of both the lower and upper waveguide layers is 5–1000 nm, and the Si doping concentration is 1E16–5E19 cm⁻¹. -3 .

[0014] Preferably, the electron blocking layer and the upper confinement layer are both one or any combination of GaN, AlGaN, AlInGaN, AlN, and AlInN;

[0015] The thickness of both the electron blocking layer and the upper confinement layer is 2–1000 nm, and the Mg doping concentration is 1E18–1E20 cm⁻¹. -3 .

[0016] Preferably, the active layer is a periodic structure composed of a well layer and a barrier layer, wherein the well layer is an InGaN well layer, and the barrier layer is one or any combination of GaN, AlInGaN, AlGaN, and AlInN.

[0017] The number of periods of the active layer is m: 4 ≥ m ≥ 1.

[0018] Preferably, the binary combination of the interlayer exciton transition layers includes the following structures: Bi2WO6 / C3N, Bi2WO6 / CsPbBr3, Bi2WO6 / BaFe2(AsP)2, Bi2WO6 / CdI2-WS2, Bi2WO6 / WSe2-MoS2, C3N / CsPbBr3, C3N / BaFe2(AsP)2, C3N / CdI2-WS2, C3N / WSe2-MoS2, CsPbBr3 / BaFe2(AsP)2, CsPbBr3 / CdI2-WS2, CsPbBr3 / WSe2-MoS2, BaFe2(AsP)2 / CdI2-WS2, BaFe2(AsP)2 / WSe2-MoS2, CdI2-WS2 / WSe2-MoS2.

[0019] Preferably, the ternary combination of the interlayer exciton transition layer includes the following structures: Bi2WO6 / C3N / CsPbBr3, Bi2WO6 / C3N / BaFe2(AsP)2, Bi2WO6 / C3N / CdI2-WS2, Bi2WO6 / C3N / WSe2-MoS2, Bi2WO6 / CsPbBr3 / BaFe2(AsP)2, Bi2WO6 / CsPbBr3 / CdI2-WS2, Bi2WO6 / CsPbBr3 / WSe2-MoS2, Bi2WO6 / BaFe2(AsP) / CdI2-WS2, Bi2WO6 / BaFe2(AsP) / WSe2-MoS2, Bi2WO6 / CdI2-WS2 / WSe2-M oS2、C3N / CsPbBr3 / BaFe2(AsP)2、C3N / CsPbBr3 / CdI2-WS2、C3N / CsPbBr3 / WSe2-MoS2、C3N / BaFe2(AsP)2 / CdI2-WS2、C3N / BaFe2(AsP)2 / WSe2-MoS2、C3N / CdI2- WS2 / WSe2-MoS2, CsPbBr3 / BaFe2(AsP)2 / CdI2-WS2, CsPbBr3 / BaFe2(AsP)2 / WSe2-MoS2, CsPbBr3 / CdI2-WS2 / WSe2-MoS2, BaFe2(AsP)2 / CdI2-WS2 / WSe2-MoS2.

[0020] Preferably, the quaternary combination of the interlayer exciton transition layer includes the following structures: Bi2WO6 / C3N / CsPbBr3 / BaFe2(AsP)2, Bi2WO6 / C3N / CsPbBr3 / CdI2-WS2, Bi2WO6 / C3N / CsPbBr3 / WSe2-MoS2, Bi2WO6 / CsPbBr3 / BaFe2(AsP)2 / CdI2-WS2, and Bi2WO6 / CsPbBr3 / BaFe2(AsP)2 / WSe2-MoS2.

[0021] Bi2WO6 / BaFe2(AsP) / CdI2-WS2 / WSe2-MoS2,

[0022] C3N / CsPbBr3 / BaFe2(AsP)2 / CdI2-WS2,

[0023] C3N / CsPbBr3 / BaFe2(AsP)2 / WSe2-MoS2,

[0024] C3N / BaFe2(AsP)2 / CdI2-WS2 / WSe2-MoS2,

[0025] CsPbBr3 / BaFe2(AsP)2 / CdI2-WS2 / WSe2-MoS2.

[0026] Preferably, the pentagonal combination of the interlayer exciton transition layer includes the following structures: Bi2WO6 / C3N / CsPbBr3 / BaFe2(AsP)2 / CdI2-WS2, Bi2WO6 / C3N / CsPbBr3 / BaFe2(AsP)2 / WSe2-MoS2, Bi2WO6 / C3N / CsPbBr3 / CdI2-WS2 / WSe2-MoS2.

[0027] Bi2WO6 / C3N / BaFe2(AsP)2 / CdI2-WS2 / WSe2-MoS2, Bi2WO6 / CsPbBr3 / BaFe2(AsP)2 / CdI2-WS2 / WSe2-MoS2, C3N / CsPbBr3 / BaFe2(AsP)2 / CdI2-WS2 / WSe2-MoS2;

[0028] The hexa-element combination of the interlayer exciton transition layer is not limited to the following structure: Bi2WO6 / C3N / CsPbBr3 / BaFe2(AsP)2 / CdI2-WS2 / WSe2-MoS2.

[0029] The beneficial effects of this invention are as follows:

[0030] 1. This invention sets interlayer exciton transition layers between the lower waveguide layer and the active layer, and between the upper waveguide layer and the active layer, respectively. When in use, the interlayer electron hybridization of the interlayer exciton transition layers generates tilted electron spins and modulates circularly polarized light with different optical selection rules, forming ultra-long lifetime interlayer exciton transitions with direct momentum transitions. This reduces internal optical losses, thereby generating exciton-induced enhanced stimulated emission of the active layer of the laser, reducing the quantum confinement Stark effect, enhancing the localization of charge carriers in the active layer, lowering the excitation threshold of the laser element, enhancing the confinement factor and electro-lasing gain, and improving the optical power and slope efficiency of the laser element. Attached Figure Description

[0031] Figure 1 This is a schematic diagram of the structure of a semiconductor laser element with an interlayer exciton transition layer proposed in this invention.

[0032] In the figure: 1 Substrate, 2 Lower confinement layer, 3 Lower waveguide layer, 4 Active layer, 5 Upper waveguide layer, 6 Electron blocking layer, 7 Upper confinement layer, 8 Interlayer exciton transition layer. Detailed Implementation

[0033] The technical solution of this patent will be further described in detail below with reference to specific embodiments.

[0034] The embodiments of this patent are described in detail below. Examples of these embodiments are shown in the accompanying drawings, wherein the same or similar reference numerals denote the same or similar elements or elements having the same or similar functions throughout. The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain this patent, and should not be construed as limiting this patent.

[0035] Example 1:

[0036] A semiconductor laser device with an interlayer exciton transition layer, such as Figure 1 As shown, from bottom to top, it includes a substrate 1, a lower confinement layer 2, a lower waveguide layer 3, an active layer 4, an upper waveguide layer 5, an electron blocking layer 6, and an upper confinement layer 7. Interlayer exciton transition layers 8 are provided between the lower waveguide layer 3 and the active layer 4, and between the upper waveguide layer 5 and the active layer 4.

[0037] The substrate 1 is one of the following: sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, sapphire / SiO2 composite substrate, sapphire / AlN composite substrate, sapphire / SiNx, sapphire / SiO2 / SiNx composite substrate, magnesium aluminum spinel MgAl2O4, MgO, ZnO, ZrB2, LiAlO2, and LiGaO2 composite substrate.

[0038] The lower confinement layer 2 is one or any combination of GaN, AlGaN, InGaN, AlInGaN, AlN, InN, AlInN, etc., and the thickness of the lower confinement layer 2 is 5-5000 nm, and the Si doping concentration is 1E18-1E20 cm⁻¹. -3 .

[0039] The lower waveguide layer 3 and the upper waveguide layer 5 are both GaN, InGaN, AlInGaN, etc., or any combination thereof. The thickness of both the lower waveguide layer 3 and the upper waveguide layer 5 is 5-1000 nm, and the Si doping concentration is 1E16-5E19 cm⁻¹. -3 .

[0040] The electron blocking layer 6 and the upper confinement layer 7 are both selected from GaN, AlGaN, AlInGaN, AlN, AlInN, etc., or any combination thereof. The thickness of both the electron blocking layer 6 and the upper confinement layer 7 is 2–1000 nm, and the Mg doping concentration is 1E18–1E20 cm⁻¹. -3 .

[0041] The active layer 4 is a periodic structure composed of a well layer and a barrier layer. The well layer is an InGaN well layer, and the barrier layer is one or any combination of GaN, AlInGaN, AlGaN, AlInN, etc. The number of periods of the active layer is m: 4 ≥ m ≥ 1.

[0042] The thickness of the interlayer exciton transition layer 8 is 0.5–500 nm.

[0043] The interlayer exciton transition layer 8 is one of Bi2WO6, C3N, CsPbBr3, BaFe2(AsP)2, CdI2-WS2, or WSe2-MoS2;

[0044] Furthermore, the interlayer exciton transition layer 8 can also be one of the binary, ternary, quaternary, pentad, and hexanal combinations of structures such as heterojunctions, superlattices, quantum wells, core-shell structures, quantum dots, and two-dimensional moiré superlattices.

[0045] In this embodiment, interlayer exciton transition layers 8 are respectively set between the lower waveguide layer 3 and the active layer 4, and between the upper waveguide layer 5 and the active layer 4. When in use, the interlayer electron hybridization of the interlayer exciton transition layer 8 generates tilted electron spins and modulates circularly polarized light with different optical selection rules, forming ultra-long lifetime interlayer exciton transitions with direct momentum transitions, reducing internal optical losses, thereby generating stimulated emission of the active layer of the exciton-induced enhanced laser, reducing the quantum confinement Stark effect, enhancing the localization of charge carriers in the active layer, reducing the excitation threshold of the laser element, enhancing the confinement factor and electro-lasing gain, and improving the optical power and slope efficiency of the laser element.

[0046] Example 2:

[0047] A semiconductor laser device with an interlayer exciton transition layer, such as Figure 1 As shown, this embodiment makes the following improvements based on Embodiment 1: the binary combination of the interlayer exciton transition layer 8 includes structures such as heterojunctions, superlattices, quantum wells, core-shell structures, quantum dots, and two-dimensional moiré superlattices. Preferably, the binary combination of the interlayer exciton transition layer 8 is not limited to the following structures: Bi2WO6 / C3N, Bi2WO6 / CsPbBr3, Bi2WO6 / BaFe2(AsP)2, Bi2WO6 / CdI2-WS2, and Bi2WO6 / WSe2-MoS2. 2. C3N / CsPbBr3, C3N / BaFe2(AsP)2, C3N / CdI2-WS2, C3N / WSe2-MoS2, CsPbBr3 / BaFe2(AsP)2, CsPbBr3 / Cd I2-WS2, CsPbBr3 / WSe2-MoS2, BaFe2(AsP)2 / CdI2-WS2, BaFe2(AsP)2 / WSe2-MoS2, CdI2-WS2 / WSe2-MoS2.

[0048] In this embodiment, the interlayer exciton transition layer 8 is a binary combination.

[0049] Example 3:

[0050] A semiconductor laser device with an interlayer exciton transition layer, such as Figure 1As shown, this embodiment makes the following improvements based on Embodiment 1: the ternary combination of the interlayer exciton transition layer 8 includes structures such as heterojunctions, superlattices, quantum wells, core-shell structures, quantum dots, and two-dimensional moiré superlattices. Preferably, the ternary combination of the interlayer exciton transition layer 8 is not limited to the following structures: Bi2WO6 / C3N / CsPbBr3, Bi2WO6 / C3N / BaFe2(AsP)2, Bi2WO6 / C3N / CdI2-WS2, Bi2WO6 / C3N / WSe2-MoS2, Bi2WO6 / CsPbBr3 / BaFe2(AsP)2, Bi2WO6 / CsPbBr3 / CdI2-WS2, Bi2WO6 / CsPbBr3 / WSe2-MoS2, Bi2WO6 / BaFe2(AsP) / CdI2-WS2, Bi2WO6 / BaFe2(AsP) / CdI2-WS2, Bi2WO6 / BaFe2(AsP) / A sP) / WSe2-MoS2, Bi2WO6 / CdI2-WS2 / WSe2-MoS2, C3N / CsPbBr3 / BaFe2(AsP)2, C3N / CsPbBr 3 / CdI2-WS2, C3N / CsPbBr3 / WSe2-MoS2, C3N / BaFe2(AsP)2 / CdI2-WS2, C3N / BaFe2(AsP)2 / W Se2-MoS2, C3N / CdI2-WS2 / WSe2-MoS2, CsPbBr3 / BaFe2(AsP)2 / CdI2-WS2, CsPbBr3 / BaFe2 (AsP)2 / WSe2-MoS2, CsPbBr3 / CdI2-WS2 / WSe2-MoS2, BaFe2(AsP)2 / CdI2-WS2 / WSe2-MoS2.

[0051] In this embodiment, the interlayer exciton transition layer 8 is a ternary combination.

[0052] Example 4:

[0053] A semiconductor laser device with an interlayer exciton transition layer, such as Figure 1 As shown, this embodiment makes the following improvements based on embodiment 1: the quaternary combination of the interlayer exciton transition layer 8 includes structures such as heterojunction, superlattice, quantum well, core-shell structure, quantum dot, and two-dimensional moiré superlattice. Preferably, the quaternary combination of the interlayer exciton transition layer (8) is not limited to the following structures: Bi2WO6 / C3N / CsPbBr3 / BaFe2(AsP)2,

[0054] Bi2WO6 / C3N / CsPbBr3 / CdI2-WS2, Bi2WO6 / C3N / CsPbBr3 / WSe2-MoS2, Bi2WO6 / CsPbBr3 / BaFe2(AsP)2 / CdI2-WS2,

[0055] Bi2WO6 / CsPbBr3 / BaFe2(AsP)2 / WSe2-MoS2,

[0056] Bi2WO6 / BaFe2(AsP) / CdI2-WS2 / WSe2-MoS2,

[0057] C3N / CsPbBr3 / BaFe2(AsP)2 / CdI2-WS2,

[0058] C3N / CsPbBr3 / BaFe2(AsP)2 / WSe2-MoS2,

[0059] C3N / BaFe2(AsP)2 / CdI2-WS2 / WSe2-MoS2,

[0060] CsPbBr3 / BaFe2(AsP)2 / CdI2-WS2 / WSe2-MoS2.

[0061] In this embodiment, the interlayer exciton transition layer 8 is a quaternary combination.

[0062] Example 5:

[0063] A semiconductor laser device with an interlayer exciton transition layer, such as Figure 1 As shown, this embodiment makes the following improvements based on embodiment 1: the five-element combination of the interlayer exciton transition layer 8 includes structures such as heterojunction, superlattice, quantum well, core-shell structure, quantum dot, and two-dimensional moiré superlattice. Preferably, the five-element combination of the interlayer exciton transition layer (8) is not limited to the following structures: Bi2WO6 / C3N / CsPbBr3 / BaFe2(AsP)2 / CdI2-WS2, Bi2WO6 / C3N / CsPbBr3 / BaFe2(AsP)2 / WSe2-MoS2, Bi2WO6 / C3N / CsPbBr3 / CdI2-WS2 / WSe2-MoS2,

[0064] Bi2WO6 / C3N / BaFe2(AsP)2 / CdI2-WS2 / WSe2-MoS2, Bi2WO6 / CsPbBr3 / BaFe2(AsP)2 / CdI2-WS2 / WSe2-MoS2, C3N / CsPbBr3 / BaFe2(AsP)2 / CdI2-WS2 / WSe2-MoS2.

[0065] In this embodiment, the interlayer exciton transition layer 8 is a pentagonal combination.

[0066] Example 6:

[0067] A semiconductor laser device with an interlayer exciton transition layer, such as Figure 1 As shown, this embodiment makes the following improvements based on embodiment 1: the six-element combination of the interlayer exciton transition layer 8 includes structures such as heterojunction, superlattice, quantum well, core-shell structure, quantum dot, and two-dimensional moiré superlattice. Preferably, the six-element combination of the interlayer exciton transition layer 8 is not limited to the following structures: Bi2WO6 / C3N / CsPbBr3 / BaFe2(AsP)2 / CdI2-WS2 / WSe2-MoS2.

[0068] In this embodiment, the interlayer exciton transition layer 8 is a hexa-element combination.

[0069] Comparative Example 1:

[0070] The following are comparisons of the average values ​​of various data obtained from blue laser experiments using the schemes in Examples 1-6 with the parameters obtained from blue laser experiments using conventional lasers:

[0071] Blue laser - Project Traditional lasers Laser of the present invention range of change Slope efficiency (W / A) 0.9 1.5 67％ <![CDATA[Threshold current density (kA / cm 2 )]]> 2.4 1.5 -38％ Optical power (W) 3.5 4.4 26％ Limiting factors 1.40％ 1.80％ 29％

[0072] As can be seen from the above, the laser element of the present invention has a 67% higher slope efficiency, a 38% lower threshold current density, a 26% higher optical power, and a 29% higher limit factor compared to traditional lasers.

[0073] The above description is only a preferred embodiment of the present invention, but the scope of protection of the present invention is not limited thereto. Any equivalent substitutions or modifications made by those skilled in the art within the scope of the technology disclosed in the present invention, based on the technical solution and inventive concept of the present invention, should be covered within the scope of protection of the present invention.

Claims

1. A semiconductor laser device having an interlayer exciton transition layer, comprising, from bottom to top, a substrate (1), a lower confinement layer (2), a lower waveguide layer (3), an active layer (4), an upper waveguide layer (5), an electron blocking layer (6), and an upper confinement layer (7), characterized in that, Interlayer exciton transition layers (8) are provided between the lower waveguide layer (3) and the active layer (4), and between the upper waveguide layer (5) and the active layer (4). The interlayer exciton transition layer (8) is one of Bi2WO6, C3N, CsPbBr3, BaFe2(AsP)2, CdI2-WS2, or WSe2-MoS2; The interlayer exciton transition layer (8) is one of the following: a binary combination, a ternary combination, a quaternary combination, a pentagonal combination, and a hexagram combination, including heterojunctions, quantum wells, core-shell structures, quantum dots, and two-dimensional moiré superlattices. The thickness of the interlayer exciton transition layer (8) is 0.5 to 500 nm.

2. A semiconductor laser element with an interlayer exciton transition layer according to claim 1, characterized in that, The substrate (1) is one of sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, sapphire / SiO2 composite substrate, sapphire / AlN composite substrate, sapphire / SiNx composite substrate, sapphire / SiO2 / SiNx composite substrate, MgAl2O4, MgO, ZnO, ZrB2, LiAlO2 and LiGaO2.

3. A semiconductor laser element with an interlayer exciton transition layer according to claim 2, characterized in that, The lower confinement layer (2) is one or any combination of GaN, AlGaN, InGaN, AlInGaN, AlN, InN, and AlInN; The thickness of the lower confinement layer (2) is 5 to 5000 nm, and the Si doping concentration is 1E18 to 1E20 cm-3.

4. A semiconductor laser element with an interlayer exciton transition layer according to claim 3, characterized in that, The lower waveguide layer (3) and the upper waveguide layer (5) are both GaN, InGaN, AlInGaN or any combination thereof; The thickness of the lower waveguide layer (3) and the upper waveguide layer (5) is 5-1000 nm, and the Si doping concentration is 1E16-5E19 cm-3.

5. A semiconductor laser element with an interlayer exciton transition layer according to claim 4, characterized in that, The electron blocking layer (6) and the upper confinement layer (7) are both GaN, AlGaN, AlInGaN, AlN, AlInN or any combination thereof; The thickness of the electron blocking layer (6) and the upper confinement layer (7) is 2 to 1000 nm, and the Mg doping concentration is 1E18 to 1E20 cm-3.

6. A semiconductor laser element with an interlayer exciton transition layer according to claim 5, characterized in that, The active layer (4) is a periodic structure composed of a well layer and a barrier layer. The well layer is an InGaN well layer, and the barrier layer is one or any combination of GaN, AlInGaN, AlGaN, and AlInN. The number of periods of the active layer is m: 4 ≥ m ≥ 1.

7. A semiconductor laser element with an interlayer exciton transition layer according to claim 1, characterized in that, The binary combination of the interlayer exciton transition layer (8) includes the following structures: Bi2WO6 / C3N, Bi2WO6 / CsPbBr3, Bi2WO6 / BaFe2(AsP)2, Bi2WO6 / CdI2-WS2, Bi2WO6 / WSe2-MoS2, C3N / CsPbBr3, C3N / BaFe2(AsP)2, C3N / CdI2-WS2, C3N / WSe2-MoS2, CsPbBr3 / BaFe2( AsP)2, CsPbBr3 / CdI2-WS2, CsPbBr3 / WSe2-MoS2, BaFe2(AsP)2 / CdI2-WS2, BaFe2(AsP)2 / WSe2-MoS2, CdI2-WS2 / WSe2-MoS2.

8. A semiconductor laser element having an interlayer exciton transition layer according to claim 7, characterized in that, The ternary combination of the interlayer exciton transition layer (8) includes the following structures: Bi2WO6 / C3N / CsPbBr3, Bi2WO6 / C3N / BaFe2(AsP)2, Bi2WO6 / C3N / CdI2-WS2、Bi2WO6 / C3N / WSe2-MoS2、 Bi2WO6 / CsPbBr3 / BaFe2(AsP)2、Bi2WO6 / CsPbBr3 / CdI2-WS2、 Bi2WO6 / CsPbBr3 / WSe2-MoS2, Bi2WO6 / BaFe2(AsP) / CdI2-WS2, Bi2WO6 / BaFe2(AsP) / WSe2- MoS2, Bi2WO6 / CdI2-WS2 / WSe2-MoS2, C3N / CsPbBr3 / BaFe2(AsP)2, C3N / CsPbBr3 / CdI2-WS2, C3N / CsPbBr3 / WSe2-MoS2, C3N / BaFe2(AsP)2 / CdI2-WS2, C3N / BaFe2(AsP)2 / WSe2-MoS2, C3N / CdI2-WS2 / WSe2-MoS2, CsPbBr3 / BaFe2(AsP)2 / CdI2-WS2, CsPbBr3 / BaFe2(AsP)2 / WSe2-MoS2, CsPbBr3 / CdI2-WS2 / WSe2-MoS2, BaFe2(AsP)2 / CdI2-WS2 / WSe2-MoS2.

9. A semiconductor laser element having an interlayer exciton transition layer according to claim 8, characterized in that, The quaternary combination of the interlayer exciton transition layer (8) includes the following structure: Bi2WO6 / C3N / CsPbBr3 / BaFe2(AsP)2, Bi2WO6 / C3N / CsPbBr3 / CdI2-WS2, Bi2WO6 / C3N / CsPbBr3 / WSe2-MoS2, Bi2WO6 / CsPbBr3 / BaFe2(AsP)2 / CdI2-WS2, Bi2WO6 / CsPbBr3 / BaFe2(AsP)2 / WSe2-MoS2, Bi2WO6 / BaFe2(AsP) / CdI2-WS2 / WSe2-MoS2, C3N / CsPbBr3 / BaFe2(AsP)2 / CdI2-WS2, C3N / CsPbBr3 / BaFe2(AsP)2 / WSe2-MoS2, C3N / BaFe2(AsP)2 / CdI2-WS2 / WSe2-MoS2, CsPbBr3 / BaFe2(AsP)2 / CdI2-WS2 / WSe2-MoS2.

10. A semiconductor exciton generator with an interlayer exciton transition layer according to claim 9 Optical element, characterized in that, The five-element combination of the interlayer exciton transition layer (8) includes the following structure: Bi2WO6 / C3N / CsPbBr3 / BaFe2(AsP)2 / CdI2-WS2, Bi2WO6 / C3N / CsPbBr3 / BaFe2(AsP)2 / WSe2-MoS2, Bi2WO6 / C3N / CsPbBr3 / CdI2-WS2 / WSe2-MoS2, Bi2WO6 / C3N / BaFe2(AsP)2 / CdI2-WS2 / WSe2-MoS2, Bi2WO6 / CsPbBr3 / BaFe2(AsP)2 / CdI2-WS2 / WSe2-MoS2, C3N / CsPbBr3 / BaFe2(AsP)2 / CdI2-WS2 / WSe2-MoS2; The six-element combination of the interlayer exciton transition layer (8) is as follows: Bi2WO6 / C3N / CsPbBr3 / BaFe2(AsP)2 / CdI2-WS2 / WSe2-MoS2.

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