Ion beam etching electrode apparatus

Abstract

The present application relates to the technical field of brain science equipment, and particularly relates to an ion beam etching electrode device, which aims to solve the problem of inconvenient substrate taking and placing. The present application comprises a rotating baffle, a lifting pressure plate, a slide glass stage and an electrode; the slide glass stage is placed on the electrode and is used for carrying the substrate; the lifting pressure plate can move in the vertical direction to press the slide glass stage tightly downwards; the rotating baffle is arranged above the slide glass stage and can rotate in the horizontal plane to move away from the slide glass stage. The present application places the substrate on the slide glass stage, and the slide glass stage is pressed tightly on the electrode through the vertical movement of the lifting pressure plate, so that the slide glass stage is prevented from deviating, sliding or even falling off due to the angle adjustment and rotation of the electrode, and the normal work is affected. The loosening and locking of the slide glass stage are realized through the vertical movement of the lifting pressure plate to replace the bonding or screw fastening mode, so that the dismounting efficiency of the slide glass stage can be greatly improved, and the time for taking and placing the substrate is saved.

Description

Technical Field

[0001] This invention relates to the field of brain science equipment technology, and in particular to an ion beam etching electrode device. Background Technology

[0002] In the field of neuroscience, with the development of life science technologies, the preparation technology for continuous ultrathin biological sections has gradually transitioned from diamond-cutting to ion-based thinning or a combination of ion-based thinning and diamond-cutting, with ion beam etching being a typical example. In the semiconductor field, with the development of integration technology, semiconductor fabrication technology has gradually transitioned from wet to dry processes, and plasma-based semiconductor processing technologies are widely used in chip fabrication. A typical example is ion beam etching, a technology based on plasma technology that uses a specific ion source to generate an ion beam to physically bombard the substrate material, achieving material removal. In current processes, the substrate is adhered to the electrodes or secured to them with screws, making substrate handling inconvenient and wasting time. Summary of the Invention

[0003] The purpose of this invention is to provide an ion beam etching electrode device to solve the problem of inconvenient substrate handling.

[0004] To solve the above-mentioned technical problems, the technical solution provided by the present invention is as follows:

[0005] An ion beam etching electrode apparatus includes a rotating baffle, a lifting pressure plate, a substrate stage, and an electrode; the substrate stage is placed on the electrode to support a substrate; the lifting pressure plate can move vertically to press the substrate stage downward; the rotating baffle is disposed above the substrate stage and can rotate in the horizontal plane to move away from the substrate stage.

[0006] Furthermore, the ion beam etching electrode device also includes a magnetohydrodynamic rotating part and a magnetohydrodynamic fixing part; the electrode and the substrate stage are mounted on the magnetohydrodynamic rotating part, which can rotate around its own axis; the magnetohydrodynamic fixing part is located below the magnetohydrodynamic rotating part and is connected to the magnetohydrodynamic rotating part.

[0007] Furthermore, the ion beam etching electrode device also includes a lifting telescopic rod, which is vertically arranged, with one end connected to the magnetohydrodynamic fixing part and the other end connected to the lifting pressure plate.

[0008] Furthermore, the ion beam etching electrode device also includes a rotating ring mounted above the wafer stage, comprising a first connecting part and a second connecting part, the first connecting part and the second connecting part being able to rotate relative to each other; the first connecting part is connected to the wafer stage, and the second connecting part can abut against the lower surface of the lifting pressure plate.

[0009] Furthermore, the ion beam etching electrode device also includes a first driving member, which is connected to a rotating baffle and is used to drive the rotating baffle to rotate in the horizontal plane.

[0010] Furthermore, the ion beam etching electrode device also includes a second driving member, which is connected to the magnetohydrodynamic rotating part and drives the magnetohydrodynamic rotating part, the electrode and the stage to rotate.

[0011] Furthermore, the ion beam etching electrode device also includes a water slip ring. The rotating part of the water slip ring is connected to the magnetohydrodynamic rotating part and rotates synchronously with the magnetohydrodynamic rotating part. The fixed part of the water slip ring is provided with a return water channel. Cooling water enters the water tank of the electrode from the water inlet of the water slip ring and then flows out from the return water inlet of the water slip ring through the return water channel.

[0012] Furthermore, the ion beam etching electrode device also includes a water distribution plate, one end of which is connected to the water inlet of the water slide ring, and the other end is connected to the water tank of the electrode.

[0013] Furthermore, the ion beam etching electrode device also includes an angle arm, which is connected to the magnetohydrodynamic fixing part and is used to control the angle of the magnetohydrodynamic fixing part.

[0014] Furthermore, the ion beam etching electrode device also includes a fixing cover, and the magnetohydrodynamic rotating part, the magnetohydrodynamic fixing part, the first driving component, the second driving component and the water slide ring are all disposed inside the fixing cover.

[0015] In summary, the technical effects achieved by this invention are as follows:

[0016] The ion beam etching electrode device provided by the present invention includes a rotating baffle, a lifting pressure plate, a substrate stage, and an electrode; the substrate stage is placed on the electrode and is used to support the substrate; the lifting pressure plate can move vertically to press the substrate stage downward; the rotating baffle is disposed above the substrate stage and can rotate in the horizontal plane to move away from the substrate stage.

[0017] The ion beam etching electrode apparatus provided by this invention places the substrate on a wafer stage and presses the wafer stage firmly onto the electrode by the vertical movement of a lifting pressure plate. This prevents the wafer stage from shifting, sliding, or even falling off due to electrode angle adjustments or rotation, which would affect normal operation. The vertical movement of the lifting pressure plate to loosen and lock the wafer stage replaces adhesive or screw fastening methods, greatly improving the efficiency of wafer stage assembly and disassembly and saving wafer handling time. Simultaneously, the rotating baffle can shield the substrate; once the ion beam stabilizes, the rotating baffle moves away to allow the ion beam to etch the substrate, avoiding uneven etching caused by initial unstable ion beam etching. Attached Figure Description

[0018] To more clearly illustrate the specific embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the specific embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are some embodiments of the present invention. For those skilled in the art, other drawings can be obtained from these drawings without creative effort.

[0019] Figure 1 This is a schematic diagram of the ion beam etching electrode device provided in an embodiment of the present invention;

[0020] Figure 2 This is an internal schematic diagram of the ion beam etching electrode device provided in an embodiment of the present invention;

[0021] Figure 3 This is a cross-sectional view of an ion beam etching electrode device provided in an embodiment of the present invention.

[0022] Icons: 1-Rotating baffle; 2-Lifting pressure plate; 3-Plate carrier stage; 4-Fixing cover; 5-Angle arm; 6-Electrode; 7-Magnetofluid rotating part; 8-Magnetofluid fixing part; 9-Lifting telescopic rod; 10-Water sliding ring; 11-Water inlet; 12-Water outlet; 13-First driving component; 14-Second driving component; 15-Water return channel; 16-Water distribution plate; 17-Rotating ring. Detailed Implementation

[0023] To make the objectives, technical solutions, and advantages of the embodiments of the present invention clearer, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. The components of the embodiments of the present invention described and shown in the accompanying drawings can generally be arranged and designed in various different configurations.

[0024] Therefore, the following detailed description of the embodiments of the invention provided in the accompanying drawings is not intended to limit the scope of the claimed invention, but merely to illustrate selected embodiments of the invention. All other embodiments obtained by those skilled in the art based on the embodiments of the invention without inventive effort are within the scope of protection of the invention.

[0025] The following detailed description of some embodiments of the present invention is provided in conjunction with the accompanying drawings. Unless otherwise specified, the following embodiments and features can be combined with each other.

[0026] In existing processes, the substrate is adhered to the electrode or fastened to the electrode with screws, which makes it inconvenient to pick up and put down the substrate and wastes time on picking up and delivering the substrate.

[0027] In view of this, the present invention provides an ion beam etching electrode apparatus, including a rotating baffle 1, a lifting pressure plate 2, a substrate stage 3 and an electrode 6; the substrate stage 3 is placed on the electrode 6 for supporting a substrate; the lifting pressure plate 2 can move vertically to press the substrate stage 3 downward; the rotating baffle 1 is disposed above the substrate stage 3 and can rotate in the horizontal plane to move away from the substrate stage 3.

[0028] The ion beam etching electrode device provided by this invention uses the vertical movement of the lifting pressure plate 2 to press the wafer stage 3 onto the electrode 6, preventing the wafer stage 3 from shifting, sliding, or even falling off due to the angle adjustment and rotation of the electrode 6, which would affect normal operation. The vertical movement of the lifting pressure plate 2 to loosen and lock the wafer stage 3 replaces adhesive or screw fastening methods, greatly improving the efficiency of wafer stage 3 assembly and disassembly and saving wafer handling time. Simultaneously, the rotating baffle 1 can shield the substrate; once the ion beam is stable, the rotating baffle 1 moves away to allow the ion beam to etch the substrate, avoiding uneven etching caused by the initial unstable ion beam etching.

[0029] The following combination Figures 1-3 The structure and shape of the ion beam etching electrode device provided in this embodiment will be described in detail:

[0030] In this embodiment, the rotating baffle 1 is positioned 10 mm above the substrate stage 3. When the ion beam is initiated, the rotating baffle 1 covers the substrate. When the ion beam stabilizes, the rotating baffle 1 is opened to achieve uniform etching. By setting the rotating baffle 1, the problem of poor etching uniformity caused by the initial instability of the ion flow is avoided.

[0031] In the optional solutions of this embodiment, such as Figure 1 , Figure 2 As shown, the ion beam etching electrode apparatus also includes a magnetohydrodynamic (MHD) rotating part 7 and a MHD fixing part 8. The electrode 6 and the substrate stage 3 are mounted on the MHD rotating part 7, which can rotate around its own axis. The axis of the MHD rotating part 7 is vertically arranged and coaxial with the substrate stage 3. The MHD fixing part 8 is located below the MHD rotating part 7 and connected to it. That is, the MHD rotating part 7 and the MHD fixing part 8 are equivalent to forming a magnetohydrodynamic (MHD) bearing, allowing the electrode 6 and the substrate stage 3 to rotate with the MHD rotating part 7 to drive the substrate to rotate 360 ​​degrees in the horizontal plane, thereby ensuring uniform etching.

[0032] In an optional embodiment, the ion beam etching electrode device further includes a lifting telescopic rod 9. The lifting telescopic rod 9 is vertically positioned, with one end connected to the magnetohydrodynamic fixing part 8 and the other end connected to the lifting pressure plate 2. The extension and retraction of the lifting telescopic rod 9 causes the lifting pressure plate 2 to move vertically, thereby releasing and tightening the substrate stage 3. Specifically, the lifting telescopic rod 9 can be a pneumatic cylinder or an electric telescopic cylinder. A pneumatic cylinder allows for rapid action and quick response, which is beneficial for improving the efficiency of substrate handling.

[0033] In addition, a buffer pad can be installed on the side of the lifting pressure plate 2 near the film carrier stage 3 to reduce the impact between the lifting pressure plate 2 and the film carrier stage 3 when locking the film carrier stage 3, and reduce noise. The buffer pad can be made of rubber to ensure sufficient friction and its own strength while ensuring buffering, so as to securely lock the film carrier stage 3.

[0034] In an optional embodiment, to prevent sliding friction between the wafer stage 3 and the lifting pressure plate 2 when the electrode 6 drives the wafer stage 3 to rotate, the ion beam etching electrode device further includes a rotating ring 17. The rotating ring 17 is mounted above the wafer stage 3 and includes a first connecting part and a second connecting part. The first connecting part and the second connecting part can rotate relative to each other. The first connecting part is connected to the wafer stage 3, and the second connecting part can abut against the lower surface of the lifting pressure plate 2. That is, the rotating ring 17 is equivalent to a thrust bearing, so that the lifting pressure plate 2 presses the wafer stage 3 by pressing the rotating ring 17, and ensures that the rotation of the wafer stage 3 is not affected by the lifting pressure plate 2.

[0035] In an optional embodiment, the ion beam etching electrode device further includes a first driving member 13 and a second driving member 14. The first driving member 13 is connected to the rotating baffle 1 and is used to drive the rotating baffle 1 to rotate in the horizontal plane; the second driving member 14 is connected to the magnetohydrodynamic rotating part 7 and drives the magnetohydrodynamic rotating part 7, the electrode 6 and the stage 3 to rotate.

[0036] Specifically, the first driving component 13 is configured as a rotary cylinder to drive the rotating baffle 1 to swing in the horizontal plane, such as... Figure 1 As shown, the rotary cylinder has a fast response speed and rapid action, which is beneficial for quickly exposing the substrate, improving work efficiency and etching uniformity, and avoiding different etching times in different parts of the substrate. The second drive component 14 is set as a servo motor to drive the magnetohydrodynamic rotating part 7 to rotate, ensuring that the substrate rotates at a uniform speed and that the etching is uniform.

[0037] In this embodiment, the ion beam etching electrode device further includes an angle arm 5, which is connected to the magnetic fluid fixing part 8 and is used to control the angle of the magnetic fluid fixing part 8, thereby controlling the angle of the substrate.

[0038] In an optional embodiment, to reduce the temperature of electrode 6 and ensure its normal operation, the ion beam etching electrode device further includes a water slip ring 10 and a water distribution plate 16. For example... Figure 3As shown, the rotating part of the water-cooled ring 10 is connected to the magnetohydrodynamic rotating part 7 and rotates synchronously with it. The fixed part of the water-cooled ring 10 is provided with a return water channel 15. One end of the water distribution plate 16 is connected to the water inlet 11 of the water-cooled ring 10, and the other end is connected to the water tank of the electrode 6. Specifically, the rotating part of the water-cooled ring 10 is fitted onto the fixed part of the water-cooled ring 10 and is rotatably connected to it. The rotating part of the water-cooled ring 10 is provided with a water inlet channel. Cooling water enters the water distribution plate 16 from the water inlet 11 of the water-cooled ring 10 through the water inlet channel, and then enters the water tank of the electrode 6 from the water distribution plate 16. After that, it flows out from the return water inlet 12 of the water-cooled ring 10 through the return water channel 15, ensuring cooling while preventing water leakage.

[0039] In an optional embodiment, the ion beam etching electrode device further includes a fixing cover 4, and the magnetohydrodynamic rotating part 7, the magnetohydrodynamic fixing part 8, the first driving component 13, the second driving component 14, and the water slide ring 10 are all disposed inside the fixing cover 4. The interior of the fixing cover 4 is a vacuum environment to ensure the normal operation of the ion beam etching electrode device.

[0040] The operation process of the ion beam etching electrode device provided in this embodiment is as follows:

[0041] The substrate is mounted on the substrate stage 3, and then the substrate stage 3 is placed on the electrode 6. The lifting telescopic rod 9 retracts to drive the lifting pressure plate 2 to move toward the substrate stage 3, and finally presses it onto the rotating ring 17 to lock the substrate stage 3.

[0042] The ion beam is then activated, and the second drive unit 14 drives the magnetohydrodynamic rotating part 7 to rotate the electrode 6 and the stage 3. After the ion beam stabilizes, the first drive unit 13 drives the rotating baffle 1 to swing to release the obstruction of the stage 3, thereby starting the etching process.

[0043] After etching is completed, the lifting telescopic rod 9 extends to move the lifting pressure plate 2 away from the substrate stage 3, and then the substrate stage 3 is removed to facilitate substrate replacement.

[0044] The ion beam etching electrode device provided in this embodiment has a simple structure and is easy to maintain. Compared with the traditional electrode 6, its weight is significantly reduced. The traditional electrode 6 has a complex and heavy structure, and its operation is unchanged, making it difficult to achieve better results. Its weight affects its stability and is not conducive to uniform etching. The ion beam etching electrode device provided in this embodiment weighs less than 30 kilograms, compared with the traditional structure's weight of over 100 kilograms. This makes it easier to adjust various angles and states, and improves its stability, which is beneficial for uniform etching.

[0045] In conventional electrode structures, the presence of cooling water limits the rotation of the wafer stage 3 to a mere 180-degree reciprocating motion due to the influence of the piping. The ion beam etching electrode device provided in this embodiment achieves 360-degree rotation of the wafer stage 3 through a water-cooled ring 10, a return water channel 15, a water distribution plate 16, and a rotating ring 17, eliminating the risk of water leakage, improving etching uniformity, and avoiding the problem of prolonged localized etching times caused by reciprocating rotation.

[0046] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, and not to limit them; although the present invention has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some or all of the technical features; and these modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present invention.

Claims

1. An ion beam etching electrode apparatus, characterized by comprising: The device comprises a rotating baffle (1), a lifting pressure plate (2), a slide stage (3) and an electrode (6); The slide stage (3) is placed on the electrode (6) and used for carrying a substrate; The lifting pressure plate (2) is movable in the vertical direction to press the slide stage (3) downward; The rotating baffle (1) is arranged above the slide stage (3) and is rotatable in the horizontal plane to move away from the slide stage (3); The device further comprises a magnetic fluid rotating part (7) and a magnetic fluid fixing part (8); The electrode (6) and the slide stage (3) are installed on the magnetic fluid rotating part (7), and the magnetic fluid rotating part (7) is rotatable around its own axis; The magnetic fluid fixing part (8) is arranged below the magnetic fluid rotating part (7) and is connected with the magnetic fluid rotating part (7); A buffer pad is arranged on the side of the lifting pressure plate (2) close to the slide stage (3).

2. The ion beam etching electrode device according to claim 1, wherein The device further comprises a lifting telescopic rod (9) arranged vertically, one end of which is connected with the magnetic fluid fixing part (8) and the other end of which is connected with the lifting pressure plate (2).

3. The ion beam etching electrode device of claim 2, wherein, The device further comprises a rotating ring (17) installed above the slide stage (3), which comprises a first connecting part and a second connecting part, and the first connecting part and the second connecting part are rotatable relative to each other; The first connecting part is connected with the slide stage (3), and the second connecting part can abut against the lower surface of the lifting pressure plate (2).

4. The ion beam etching electrode device of claim 3, wherein, The device further comprises a first driving member (13) connected with the rotating baffle (1) and used for driving the rotating baffle (1) to rotate in the horizontal plane.

5. The ion beam etching electrode device of claim 4, wherein, The device further comprises a second driving member (14) connected with the magnetic fluid rotating part (7) and used for driving the magnetic fluid rotating part (7), the electrode (6) and the slide stage (3) to rotate.

6. The ion beam etching electrode device of claim 5, wherein, The device further comprises a water-sealed ring (10), a rotating part of which is connected with the magnetic fluid rotating part (7) and rotates synchronously with the magnetic fluid rotating part (7); A fixed part of the water-sealed ring (10) is provided with a return water channel (15), and cooling water enters a water tank of the electrode (6) from a water inlet (11) of the water-sealed ring (10), and then flows out from a water outlet (12) of the water-sealed ring (10) through the return water channel (15).

7. The ion beam etching electrode device of claim 6, wherein, The device further comprises a water distribution disc (16), one end of which is in communication with the water inlet (11) of the water-sealed ring (10), and the other end of which is in communication with the water tank of the electrode (6).

8. The ion beam etching electrode device of claim 7, wherein, The device further comprises an angle arm (5) connected with the magnetic fluid fixing part (8) and used for controlling the angle of the magnetic fluid fixing part (8).

9. The ion beam etching electrode device of claim 8, wherein, The device further comprises a fixed cover (4), and the magnetic fluid rotating part (7), the magnetic fluid fixing part (8), the first driving member (13), the second driving member (14) and the water-sealed ring (10) are arranged in the fixed cover (4).

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