Bse compensation device and method of using the same

Abstract

The application provides a BSE compensation device, which comprises a first photoetching compensation module, a first key size detection module, a second photoetching compensation module and a second key size detection module. The first photoetching compensation module is used for obtaining first errors of photoetching and etching of multiple shots to set a first compensation value. The first key size detection module is used for obtaining first data of post-development key size detection and post-etching key size detection, and feeding back the first data to the first photoetching compensation module. The second photoetching compensation module is used for obtaining second errors of photoetching and etching of a single shot corrected by a fixed compensation value, and setting a second compensation value according to the second errors. The second key size detection module is used for obtaining second data of post-development key size detection and post-etching key size detection of the single shot corrected by the fixed compensation value, and feeding back the second data to the second photoetching compensation module. The application can achieve the effect of dynamic compensation, and the compensation is more reasonable for each wafer, so that the process window is improved to the maximum extent.

Description

Technical Field

[0001] This invention relates to the field of semiconductor technology, and in particular to a BSE compensation device and its usage method. Background Technology

[0002] BSE (by-shot exposure, applying different exposure energies to each shot) is a special compensation method for photolithography processes, widely used in technology nodes of 40nm and below. It aims to improve the final dimensional uniformity by intentionally altering the size distribution after photolithography by applying different exposure energies to each shot. Existing BSE solutions are fixed schemes derived from extensive data analysis. Because process fluctuations, inter-machine differences, and variations within the PM cycle must be fully considered, the final compensation scheme must be compromised, thus not achieving 100% effectiveness and limiting its improvement on the process window. In some cases, process fluctuations even lead to a further reduction in the process window due to fixed compensation.

[0003] To solve the above problems, it is necessary to propose a new type of BSE compensation device and its usage method. Summary of the Invention

[0004] In view of the shortcomings of the prior art described above, the purpose of this invention is to provide a BSE compensation device and its usage method to solve the problem that existing BSE solutions are fixed schemes derived from a large amount of data. Because factors such as process fluctuations, machine differences, and PM cycle variations must be fully considered, the final compensation scheme inevitably has to be compromised, thus failing to achieve 100% effectiveness and limiting its improvement effect on the process window. In some cases, fixed compensation for certain wafers even further reduces the process window due to process fluctuations.

[0005] To achieve the above and other related objectives, the present invention provides a BSE compensation device, comprising:

[0006] The first lithography compensation module is used to acquire the first error of multiple shot lithography and etching to set the first compensation value;

[0007] The first critical dimension detection module is used to acquire first data of critical dimension detection after development and critical dimension detection after etching, and to feed the first data back to the first photolithography compensation module.

[0008] The second lithography compensation module is used to obtain the second error of lithography and etching of a single shot after correction by the fixed compensation value, set a second compensation value according to the second error, and obtain the final compensation value of a single shot according to the first and second compensation values.

[0009] The second critical dimension detection module is used to acquire second data of critical dimension detection after correction by the fixed compensation value for a single shot and critical dimension detection after etching, and to feed the second data back to the second lithography compensation module.

[0010] Preferably, the first and second lithography compensation modules are used in an advanced process control system.

[0011] Preferably, the method for the first photolithography compensation module to obtain the first compensation value includes: setting the first compensation value of photolithography based on the error between the critical dimension after etching and the design layout of at least one wafer in each machine, so that the error between the critical dimension after etching and the design layout tends to zero, wherein the first compensation value is a fixed value.

[0012] Preferably, the first and second critical dimension detection modules use a scanning electron microscope to acquire data on critical dimension detection after development and critical dimension detection after etching.

[0013] Preferably, the method for the second lithography compensation module to obtain the second compensation value includes: setting the second compensation value corresponding to the shot based on the error between the etched critical dimension corrected by the fixed compensation value and the design layout of at least one shot in each machine, and obtaining the final compensation value of a single shot using the first and second compensation values, so that the error between the etched critical dimension and the design layout tends to zero.

[0014] This invention provides a method of using a BSE compensation device, comprising:

[0015] Step 1: Provide the first and second photolithography compensation modules and the first and second critical dimension detection modules;

[0016] Step 2: Provide at least one wafer, perform photolithography and etching on the wafer, use the first critical dimension detection module to obtain the first data of critical dimension detection after development and critical dimension detection after etching, and feed the first data back to the first photolithography compensation module. The first photolithography compensation module obtains the first compensation value based on the first error of photolithography and etching.

[0017] Step 3: Correct the lithography parameters using the first compensation value, perform the corrected lithography and subsequent etching, and use the second critical dimension detection module to obtain the second data of critical dimension detection after development and critical dimension detection after etching for a single shot, and feed the second data back to the second critical dimension detection module.

[0018] Step 4: Use the second key dimension detection module to obtain the second compensation value corresponding to each individual shot, and obtain the final compensation value corresponding to the shot based on the first and second compensation values.

[0019] Preferably, the first and second lithography compensation modules in step one are used in an advanced process control system.

[0020] Preferably, in step one, the first and second critical dimension detection modules use a scanning electron microscope to acquire data on critical dimension detection after development and critical dimension detection after etching.

[0021] Preferably, the method for the first photolithography compensation module to obtain the first compensation value in step two includes: setting the first compensation value of photolithography according to the error between the critical dimension after etching and the design layout of at least one wafer in each machine, so that the error between the critical dimension after etching and the design layout tends to zero, wherein the first compensation value is a fixed value.

[0022] Preferably, the method for the second lithography compensation module to obtain the second compensation value in step three includes: setting the second compensation value corresponding to the shot based on the error between the etched critical dimension corrected by the fixed compensation value and the design layout of at least one shot in each machine, and obtaining the final compensation value of a single shot using the first and second compensation values, so that the error between the etched critical dimension and the design layout tends to zero.

[0023] Preferably, the method further includes step five: using the first and second compensation values ​​to correct the lithography parameters, performing corrected lithography and subsequent etching, and then correcting the second compensation value according to the error between the critical dimension after etching and the design layout, so that the error between the critical dimension after etching and the design layout tends to zero.

[0024] As described above, the BSE compensation device and its method of use of the present invention have the following beneficial effects:

[0025] This invention adds variables such as process fluctuations, machine differences, and PM cycle variations as floating factors to the original fixed compensation scheme to achieve dynamic compensation. Furthermore, the compensation is more reasonable for each wafer, thereby maximizing the improvement of the process window. Attached Figure Description

[0026] Figure 1 The diagram shown is a schematic diagram of the module structure of the BSE compensation device of the present invention.

[0027] Figure 2 The diagram shown illustrates the method of using the BSE compensation device of the present invention. Detailed Implementation

[0028] The following specific examples illustrate the implementation of the present invention. Those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific embodiments, and various details in this specification can also be modified or changed based on different viewpoints and applications without departing from the spirit of the present invention.

[0029] Please see Figure 1 The present invention provides a BSE compensation device, comprising:

[0030] The first lithography compensation module 101 is used to acquire the first error of multiple shot lithography and etching to set a first compensation value;

[0031] In an embodiment of the present invention, the method for the first lithography compensation module 101 to obtain the first compensation value includes: setting a first compensation value for lithography based on the error between the critical dimension after etching and the design layout of at least one wafer in each machine, so that the error between the critical dimension after etching and the design layout tends to zero, wherein the first compensation value is a fixed value. That is, a fixed scheme derived from a large amount of data, but because process fluctuations, differences between machines, changes within the PM cycle, etc., must be fully considered, the final compensation scheme must be discounted, thus not achieving 100% effectiveness, and the improvement effect on the process window is limited. In some cases, the fixed compensation for certain wafers may even further reduce the process window due to process fluctuations.

[0032] The first critical dimension detection module 102 is used to acquire first data of critical dimension detection after development and critical dimension detection after etching, and feed the first data back to the first photolithography compensation module 101; the data transmission can be wired or wireless.

[0033] The second lithography compensation module 103 is used to obtain the second error of lithography and etching of a single shot after correction by a fixed compensation value, set a second compensation value according to the second error, and obtain the final compensation value of a single shot according to the first and second compensation values. That is, factors such as process fluctuations, differences between machines, and changes within the PM cycle are all treated as floating factors and applied to the original compensation scheme as variables to achieve the effect of dynamic compensation. Furthermore, since the compensation is more reasonable for each wafer, the process window is improved to the greatest extent.

[0034] In an embodiment of the present invention, the method for the second lithography compensation module 103 to obtain the second compensation value includes: setting a second compensation value corresponding to the shot based on the error between the etched critical dimension and the design layout after correction by a fixed compensation value for at least one shot in each machine, and obtaining the final compensation value of a single shot using the first and second compensation values, so that the error between the etched critical dimension and the design layout tends to zero.

[0035] The second critical dimension detection module 104 is used to acquire second data of critical dimension detection after correction by a fixed compensation value for a single shot and critical dimension detection after etching, and feeds the second data back to the second lithography compensation module 103; the data transmission can be wired or wireless.

[0036] In an embodiment of the present invention, the first and second lithography compensation modules are used in the advanced process control system 10.

[0037] In embodiments of the present invention, the first and second critical dimension detection modules utilize a scanning electron microscope to acquire data on critical dimension detection after development and after etching. It should be noted that data on critical dimension detection after development and after etching can also be acquired using other equipment known to those skilled in the art; no specific limitations are imposed here.

[0038] Please see Figure 2 The present invention also provides a method of using a BSE compensation device, comprising:

[0039] Step 1: Provide first and second lithography compensation modules and first and second critical dimension detection modules; In the embodiments of the present invention, the first and second lithography compensation modules in step 1 are used in the advanced process control system 10.

[0040] In an embodiment of the present invention, in step one, the first and second critical dimension detection modules use a scanning electron microscope to acquire data on critical dimension detection after development and critical dimension detection after etching.

[0041] Step 2: Provide at least one wafer and perform photolithography and etching on it. Utilize the first critical dimension detection module 102 to acquire first data on critical dimension detection after development and after etching. Feed this first data back to the first photolithography compensation module 101. The first photolithography compensation module 101 obtains a first compensation value based on the first errors in photolithography and etching. This is a fixed scheme derived from a large amount of data. However, due to the need to fully consider process fluctuations, differences between equipment, variations within the PM cycle, and other factors, the final compensation scheme must be discounted, thus not achieving 100% effectiveness and limiting the improvement effect on the process window. In some cases, process fluctuations even lead to a further reduction in the process window due to the fixed compensation.

[0042] In an embodiment of the present invention, the method for the first photolithography compensation module 101 to obtain the first compensation value in step two includes:

[0043] The first compensation value for photolithography is set according to the error between the critical dimension after etching and the design layout of at least one wafer in each machine, so that the error between the critical dimension after etching and the design layout tends to zero, wherein the first compensation value is a fixed value.

[0044] Step 3: Correct the photolithography parameters using the first compensation value, perform the corrected photolithography and subsequent etching, and use the second critical dimension detection module 104 to obtain the second data of critical dimension detection after single shot development and critical dimension detection after etching, and feed the second data back to the second critical dimension detection module 104.

[0045] In an embodiment of the present invention, the method for the second photolithography compensation module 103 to obtain the second compensation value in step three includes:

[0046] Based on the error between the etched critical dimension and the design layout after correction by a fixed compensation value for at least one shot in each machine, a second compensation value is set for the shot. The first and second compensation values ​​are used to obtain the final compensation value for a single shot, so that the error between the etched critical dimension and the design layout tends to zero.

[0047] Step 4: Use the second critical dimension detection module 104 to obtain the corresponding second compensation value for each individual shot, and obtain the final compensation value for the shot based on the first and second compensation values. This means that factors such as process fluctuations, inter-machine differences, and PM cycle variations are treated as floating factors and applied as variables to the original compensation scheme, achieving a dynamic compensation effect. Furthermore, because the compensation is more reasonable for each wafer, the process window is improved to the greatest extent possible.

[0048] In an embodiment of the present invention, the method further includes step five: correcting the photolithography parameters using the first and second compensation values, performing the corrected photolithography and subsequent etching, and then correcting the second compensation value based on the error between the critical dimension after etching and the design layout, so that the error between the critical dimension after etching and the design layout tends to zero.

[0049] It should be noted that the illustrations provided in this embodiment are only schematic representations of the basic concept of the present invention. Therefore, the drawings only show the components related to the present invention and are not drawn according to the actual number, shape and size of the components in the actual implementation. In the actual implementation, the form, quantity and proportion of each component can be arbitrarily changed, and the layout of the components may also be more complex.

[0050] In summary, this invention incorporates factors such as process fluctuations, inter-machine differences, and PM cycle variations as floating factors into the original fixed compensation scheme, achieving a dynamic compensation effect. Furthermore, the compensation is more reasonable for each wafer, thereby maximizing the improvement of the process window. Therefore, this invention effectively overcomes the various shortcomings of existing technologies and has high industrial application value.

[0051] The above embodiments are merely illustrative of the principles and effects of the present invention and are not intended to limit the invention. Any person skilled in the art can modify or alter the above embodiments without departing from the spirit and scope of the present invention. Therefore, all equivalent modifications or alterations made by those skilled in the art without departing from the spirit and technical concept disclosed in the present invention should still be covered by the claims of the present invention.

Claims

1. A BSE compensation device, characterized in that, include: The first lithography compensation module is used to receive first data and obtain multiple shot lithography and etching first errors based on the difference between the key dimensions after etching and the design layout in the first data in order to set a first compensation value. The first critical dimension detection module is used to acquire first data of critical dimension detection after development and critical dimension detection after etching, and to feed the first data back to the first photolithography compensation module. The first compensation value is a fixed value. The first photolithography compensation module sets the first compensation value so that the error between the etched critical dimension and the design layout tends to zero. The second lithography compensation module is used to receive second data, obtain the second error of lithography and etching of a single shot after correction by a fixed compensation value based on the difference between the key dimension after etching and the design layout in the second data, set a second compensation value based on the second error, and obtain the final compensation value of a single shot based on the first and second compensation values. The second critical dimension detection module is used to acquire second data of critical dimension detection after the fixed compensation value is corrected for a single shot and critical dimension detection after etching, and to feed the second data back to the second lithography compensation module. The second photolithography compensation module sets the second compensation value so that the error between the etched critical dimension and the design layout tends to be zero.

2. The BSE compensation device according to claim 1, characterized in that: The first and second lithography compensation modules are used in advanced process control systems.

3. The BSE compensation device according to claim 1, characterized in that: The first and second critical dimension detection modules use scanning electron microscopes to acquire data on critical dimension detection after development and critical dimension detection after etching.

4. The BSE compensation device according to claim 1, characterized in that: The method for the second lithography compensation module to obtain the second compensation value includes: setting the second compensation value corresponding to the shot based on the error between the etched critical dimension and the design layout after correction by the fixed compensation value for at least one shot in each machine, and obtaining the final compensation value of a single shot using the first and second compensation values, so that the error between the etched critical dimension and the design layout tends to zero.

5. The method of using the BSE compensation device according to any one of claims 1 to 4, characterized in that, At least including: Step 1: Provide the first and second photolithography compensation modules and the first and second critical dimension detection modules; Step 2: Provide at least one wafer, perform photolithography and etching on the wafer, use the first critical dimension detection module to obtain the first data of critical dimension detection after development and critical dimension detection after etching, and feed the first data back to the first photolithography compensation module. The first photolithography compensation module obtains the first compensation value based on the first error of photolithography and etching. Step 3: Correct the lithography parameters using the first compensation value, perform the corrected lithography and subsequent etching, and use the second critical dimension detection module to obtain the second data of critical dimension detection after development and critical dimension detection after etching for a single shot, and feed the second data back to the second critical dimension detection module. Step 4: Use the second key dimension detection module to obtain the second compensation value corresponding to each individual shot, and obtain the final compensation value corresponding to the shot based on the first and second compensation values.

6. The method of using the BSE compensation device according to claim 5, characterized in that: In step one, the first and second lithography compensation modules are used in the advanced process control system.

7. The method of using the BSE compensation device according to claim 5, characterized in that: In step one, the first and second critical dimension detection modules use a scanning electron microscope to acquire data on critical dimension detection after development and critical dimension detection after etching.

8. The method of using the BSE compensation device according to claim 5, characterized in that: The method for the first photolithography compensation module to obtain the first compensation value in step two includes: setting the first compensation value of photolithography according to the error between the critical dimension after etching and the design layout of at least one wafer in each machine, so that the error between the critical dimension after etching and the design layout tends to zero, wherein the first compensation value is a fixed value.

9. The method of using the BSE compensation device according to claim 5, characterized in that: The method for the second lithography compensation module to obtain the second compensation value in step three includes: setting the second compensation value corresponding to the shot based on the error between the etched critical dimension and the design layout after correction by the fixed compensation value for at least one shot in each machine, and obtaining the final compensation value of a single shot using the first and second compensation values, so that the error between the etched critical dimension and the design layout tends to zero.

10. The method of using the BSE compensation device according to claim 5, characterized in that: The method further includes step five: using the first and second compensation values ​​to correct the lithography parameters, performing corrected lithography and subsequent etching, and then correcting the second compensation value based on the error between the critical dimension after etching and the design layout, so that the error between the critical dimension after etching and the design layout tends to zero.

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