Semiconductor laser element provided with an electrically conductive phase change layer

Abstract

The application provides a semiconductor laser element provided with a conductive phase change layer, and relates to the technical field of semiconductor photoelectric devices, and sequentially comprises a substrate, a lower limiting layer, a lower waveguide layer, an active layer, an upper waveguide layer and an upper limiting layer from bottom to top; the conductive phase change layer is arranged between the lower waveguide layer and the lower limiting layer and between the upper waveguide layer and the electron blocking layer; the conductive phase change layer has a reversible control phase change field; the phase change during the high-low temperature change in the epitaxial growth process is controlled; the phase change rate is improved from the minute order of magnitude to the picosecond order of magnitude; the resistivity and the carrier potential barrier are reduced; the single transverse mode lasing current and the threshold voltage are reduced; meanwhile, the conductive phase change layer also has a reversible control strain field; the uneven thermal stress distribution is improved; the In component fluctuation and segregation of the active layer are inhibited; the interface quality of the active layer is improved; the thermal stability and the optical catastrophe damage are inhibited; the confinement factor of the laser element is enhanced; and the lasing power and the slope efficiency of the laser element are improved.

Description

Technical Field

[0001] This invention relates to the field of semiconductor optoelectronic device technology, and more specifically, to a semiconductor laser element having a conductive phase transition layer. Background Technology

[0002] Laser components are widely used in laser displays, laser TVs, laser projectors, communications, medical applications, weaponry, guidance, ranging, spectral analysis, cutting, precision welding, and high-density optical storage. There are many types of laser components, and they can be classified in various ways, mainly including solid-state, gas, liquid, semiconductor, and dye laser components. Compared with other types of laser components, all-solid-state semiconductor laser components have advantages such as small size, high efficiency, light weight, good stability, long lifespan, simple and compact structure, and miniaturization. Laser components differ significantly from nitride semiconductor light-emitting diodes (LEDs): 1) Lasers are generated by stimulated emission of charge carriers, resulting in a smaller spectral half-width and very high brightness; a single laser component can have an output power in the W range, while nitride semiconductor LEDs are generated by spontaneous emission, with a single LED having an output power in the mW range; 2) Laser components operate at current densities of KA / cm², more than two orders of magnitude higher than nitride LEDs, leading to stronger electron leakage, more severe Auger recombination, stronger polarization effects, and more severe electron-hole mismatch, resulting in more severe efficiency degradation and the Droop effect; 3) Light-emitting diodes... In a diode, spontaneous transition radiation occurs without external influence, producing incoherent light transitioning from a high energy level to a low energy level. In contrast, laser elements emit stimulated transition radiation, where the energy of the induced photon must equal the energy difference between the electron and the transition energy levels to produce coherent light. 4) Different principles: In a light-emitting diode, electrons and holes transition to a quantum well or pn junction under external voltage to produce radiative recombination emission. In contrast, laser elements require lasing conditions to be met. This requires the inversion of carrier distribution in the active region. The stimulated emission light oscillates back and forth in the resonant cavity, and its propagation in the gain medium amplifies the light. When the threshold condition is met, the gain must be greater than the loss, and finally, laser light is output. Nitride semiconductor laser elements have the following problems: 1) The symmetry breaking, which is far from the equilibrium phase transition, causes discontinuities or abrupt changes at the threshold, such as conductance jumps, capacitance drops, junction voltage jumps, series resistance drops, and ideality factor jumps. 2) Increased In content in the quantum well leads to In content fluctuations and strain, resulting in a broadened gain spectrum and decreased peak gain of the laser element. Increased In content also worsens thermal stability; high-temperature p-type semiconductor and confinement layer growth cause thermal degradation of the active layer, reducing its quality and interface quality. High defect density within the active layer, a large interfacial gap between InN and GaN, InN phase segregation, thermal degradation, and suboptimal crystal quality further contribute to suboptimal quantum well and interface quality, increasing the number of nonradiative recombination centers or optical catastrophes. 3) Non-uniform temperature distribution in the laser element causes uneven thermal expansion and stress distribution, leading to problems such as temperature quenching, laser element fracture, thermal lensing effects, and stress birefringence. Summary of the Invention

[0003] The purpose of this invention is to provide a semiconductor laser element with a conductive phase transition layer, which solves the problems existing in the prior art.

[0004] A semiconductor laser device having a conductive phase change layer includes, from bottom to top, a substrate, a lower confinement layer, a lower waveguide layer, an active layer, an upper waveguide layer, an electron blocking layer, and an upper confinement layer. A conductive phase change layer is provided between the active layer and the lower waveguide layer, and between the lower confinement layer and the lower waveguide layer.

[0005] As a preferred embodiment of the present invention, the conductive phase change layer is H x Any two or more combinations of VO2, InVO4, CoF2O4, VO2, and FeHCF.

[0006] As a preferred technical solution of the present invention, any combination of the conductive phase transition layer includes, but is not limited to, the following binary combinations of heterojunctions, superlattices, quantum wells, core-shell structures, quantum dots, etc.: H x VO2 / InVO4,H x VO2 / CoF2O4,H x VO2 / VO2,H x VO2 / FeHCF,InVO4 / CoF2O4,InVO4 / VO2,InVO4 / FeHCF,CoF2O4 / VO2,CoF2O4 / FeHCF,VO2 / FeHCF.

[0007] As a preferred technical solution of the present invention, any combination of the conductive phase transition layer includes, but is not limited to, the following ternary combinations of heterojunctions, superlattices, quantum wells, core-shell structures, quantum dots, etc.: H x VO2 / InVO4 / CoF2O4,H x VO2 / InVO4 / VO2,H x VO2 / InVO4 / FeHCF,H x VO2 / CoF2O4 / VO2,H x VO2 / CoF2O4 / FeHCF,H x VO2 / VO2 / FeHCF,InVO4 / CoF2O4 / VO2,InVO4 / CoF2O4 / FeHCF,InVO4 / VO2 / FeHCF,CoF2O4 / VO2 / FeHCF.

[0008] As a preferred technical solution of the present invention, any combination of the conductive phase transition layer includes, but is not limited to, the following quaternary combinations of heterojunctions, superlattices, quantum wells, core-shell structures, quantum dots, etc.: H x VO2 / InVO4 / CoF2O4 / VO2,H x VO2 / InVO4 / CoF2O4 / FeHCF,InVO4 / CoF2O4 / VO2 / FeHCF.

[0009] As a preferred embodiment of the present invention, the lower confinement layer (101), lower waveguide layer (102), active layer (103), upper waveguide layer (104), electron blocking layer (105), and upper confinement layer (106) include any one or any multiple of GaN, AlGaN, InGaN, AlInGaN, AlN, InN, AlInN, SiC, Ga2O3, BN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, AlInAs, AlInP, AlGaP, and InGaP. The semiconductor laser element comprises a semiconductor deep ultraviolet laser with an emission wavelength of 200nm to 300nm, a semiconductor ultraviolet laser with an emission wavelength of 300nm to 420nm, a semiconductor blue laser with an emission wavelength of 420nm to 480nm, a semiconductor green laser with an emission wavelength of 500nm to 550nm, semiconductor red and yellow lasers with an emission wavelength of 550nm to 700nm, a semiconductor infrared laser with an emission wavelength of 800nm ​​to 1000nm, and a semiconductor far-infrared laser with an emission wavelength of 1000nm to 1600nm.

[0010] As a preferred embodiment of the present invention, the lower confinement layer (101), lower waveguide layer (102), active layer (103), upper waveguide layer (104), electron blocking layer (105), and upper confinement layer (106) include any one or any multiple of GaN, AlGaN, InGaN, AlInGaN, AlN, InN, AlInN, SiC, Ga2O3, BN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, AlInAs, AlInP, AlGaP, and InGaP. The semiconductor laser element comprises a semiconductor deep ultraviolet laser with an emission wavelength of 200nm to 300nm, a semiconductor ultraviolet laser with an emission wavelength of 300nm to 420nm, a semiconductor blue laser with an emission wavelength of 420nm to 480nm, a semiconductor green laser with an emission wavelength of 500nm to 550nm, semiconductor red and yellow lasers with an emission wavelength of 550nm to 700nm, a semiconductor infrared laser with an emission wavelength of 800nm ​​to 1000nm, and a semiconductor far-infrared laser with an emission wavelength of 1000nm to 1600nm.

[0011] As a preferred technical solution of the present invention, any combination of the conductive phase transition layer includes, but is not limited to, the following five-element combinations of heterojunctions, superlattices, quantum wells, core-shell structures, quantum dots, etc.: H x VO2 / InVO4 / CoF2O4 / VO2 / FeHCF.

[0012] As a preferred technical solution of the present invention, a conductive phase transition layer is provided between the active layer and the lower waveguide layer, and between the lower confinement layer and the lower waveguide layer. The conductive phase transition layer has a reversibly tunable phase transition field, which regulates the phase transition during high and low temperature changes in epitaxial growth, thereby increasing the phase transition rate from the minute level to the picosecond level, reducing resistivity and carrier barrier, reducing single transverse mode lasing current and threshold voltage, and reducing conductance jump, junction voltage jump and series resistance sinking problems caused by symmetry breaking. At the same time, the conductive phase transition layer also has a reversibly tunable strain field, which improves the non-uniformity of thermal stress distribution, suppresses In composition fluctuations and segregation in the active layer, improves the interface quality of the active layer, improves thermal stability and suppresses optical catastrophic damage, enhances the confinement factor of the laser element, and improves the lasing power and slope efficiency of the laser element.

[0013] As a preferred technical solution of the present invention, the substrate includes any one of sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, sapphire / SiO2 composite substrate, sapphire / AlN composite substrate, sapphire / SiNx, sapphire / SiO2 / SiNx composite substrate, magnesium aluminum spinel MgAl2O4, MgO, ZnO, ZrB2, LiAlO2 and LiGaO2 composite substrate.

[0014] Compared with the prior art, the beneficial effects of the present invention are as follows:

[0015] In the solution of this invention:

[0016] Compared to existing technologies, a conductive phase transition layer is provided between the active layer and the lower waveguide layer, as well as between the lower confinement layer and the lower waveguide layer. This conductive phase transition layer has a reversibly modulated phase transition field, which regulates the phase transition during high and low temperature changes in epitaxial growth, increasing the phase transition rate from the minute level to the picosecond level. This reduces resistivity and carrier barrier, lowers single transverse mode lasing current and threshold voltage, and reduces conductance jumps, junction voltage jumps, and series resistance drops caused by symmetry breaking. At the same time, the conductive phase transition layer also has a reversibly modulated strain field, which improves the uneven distribution of thermal stress, suppresses In composition fluctuations and segregation in the active layer, improves the interface quality of the active layer, enhances thermal stability and suppresses optical catastrophic damage, strengthens the confinement factor of the laser element, and improves the lasing power and slope efficiency of the laser element. Attached Figure Description

[0017] Figure 1 This is a schematic diagram of a semiconductor laser element with a conductive phase transition layer provided by the present invention.

[0018] The image shows:

[0019] 100: Substrate; 101: Lower confinement layer; 102: Lower waveguide layer; 103: Active layer; 104: Upper waveguide layer; 105: Electron blocking layer; 106: Upper confinement layer; 107: Conductive phase transition layer. Detailed Implementation

[0020] To make the objectives, technical solutions, and advantages of the embodiments of the present invention clearer, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments.

[0021] Therefore, the following detailed description of embodiments of the present invention is not intended to limit the scope of the claimed invention, but merely illustrates some embodiments of the invention. All other embodiments obtained by those skilled in the art based on the embodiments of the present invention without inventive effort are within the scope of protection of the present invention.

[0022] It should be noted that, unless otherwise specified, the embodiments and features and technical solutions in the embodiments of the present invention can be combined with each other.

[0023] Example 1

[0024] Please see Figure 1 This embodiment provides a technical solution: a semiconductor laser element with a conductive phase change layer, which, from bottom to top, includes a substrate 100, a lower confinement layer 101, a lower waveguide layer 102, an active layer 103, an upper waveguide layer 104, an electron blocking layer 105, an upper confinement layer 106, and a conductive phase change layer 107 provided between the lower waveguide layer 102 and the lower confinement layer 101 and between the active layer 103 and the lower waveguide layer 102.

[0025] The conductive phase change layer is H x Any two combinations of VO2, InVO4, CoF2O4, VO2, and FeHCF.

[0026] A conductive phase transition layer 107 is provided between the active layer 103 and the lower waveguide layer 102, and between the lower confinement layer 101 and the lower waveguide layer 102. The conductive phase transition layer has a reversibly tunable phase transition field, which regulates the phase transition during high and low temperature changes in epitaxial growth, thereby increasing the phase transition rate from the minute level to the picosecond level, reducing resistivity and carrier barrier, reducing single transverse mode lasing current and threshold voltage, and reducing conductance jump, junction voltage jump and series resistance drop caused by symmetry breaking. At the same time, the conductive phase transition layer also has a reversibly tunable strain field, which improves the uneven distribution of thermal stress, suppresses In composition fluctuations and segregation in the active layer, improves the interface quality of the active layer, improves thermal stability and suppresses optical catastrophic damage, enhances the confinement factor of the laser element, and improves the lasing power and slope efficiency of the laser element.

[0027] The lower confinement layer 101, lower waveguide layer 102, active layer 103, upper waveguide layer 104, electron blocking layer 105, and upper confinement layer 106 include any one or any combination of GaN, AlGaN, InGaN, AlInGaN, AlN, InN, AlInN, SiC, Ga2O3, BN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, AlInAs, AlInP, AlGaP, and InGaP; the semiconductor laser element This includes semiconductor deep ultraviolet lasers with emission wavelengths of 200nm to 300nm, semiconductor ultraviolet lasers with emission wavelengths of 300nm to 420nm, semiconductor blue lasers with emission wavelengths of 420nm to 480nm, semiconductor green lasers with emission wavelengths of 500nm to 550nm, semiconductor red and yellow lasers with emission wavelengths of 550nm to 700nm, semiconductor infrared lasers with emission wavelengths of 800nm ​​to 1000nm, and semiconductor far-infrared lasers with emission wavelengths of 1000nm to 1600nm.

[0028] The substrate 100 includes any one of sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, sapphire / SiO2 composite substrate, sapphire / AlN composite substrate, sapphire / SiNx, sapphire / SiO2 / SiNx composite substrate, magnesium aluminum spinel MgAl2O4, MgO, ZnO, ZrB2, LiAlO2, and LiGaO2 composite substrate.

[0029] Example 2

[0030] Please see Figure 1 This embodiment provides a technical solution: a semiconductor laser element with a conductive phase change layer, which includes, from bottom to top, a substrate 100, a lower confinement layer 101, a lower waveguide layer 102, an active layer 103, an upper waveguide layer 104, an electron blocking layer 105, an upper confinement layer 106, and a conductive phase change layer 107 between the lower waveguide layer 102 and the lower confinement layer 101 and between the active layer 103 and the lower waveguide layer 102.

[0031] A conductive phase transition layer 107 is provided between the active layer 103 and the lower waveguide layer 102, and between the lower confinement layer 101 and the lower waveguide layer 102. The conductive phase transition layer 107 has reversible electric field modulation, which can regulate the phase transition during high and low temperature changes in the epitaxial growth process. The phase transition rate is increased from the minute level to the picosecond level, which reduces resistivity and carrier barrier, reduces single transverse mode lasing current, enhances the confinement factor of the laser element, and improves the lasing power and slope efficiency of the laser element.

[0032] Any combination of the conductive phase transition layer includes, but is not limited to, the following binary combinations of heterojunctions, superlattices, quantum wells, core-shell structures, quantum dots, etc.: H x VO2 / InVO4,H x VO2 / CoF2O4,H x VO2 / VO2,H x VO2 / FeHCF,InVO4 / CoF2O4,InVO4 / VO2,InVO4 / FeHCF,CoF2O4 / VO2,CoF2O4 / FeHCF,VO2 / FeHCF.

[0033] The lower confinement layer 101, lower waveguide layer 102, active layer 103, upper waveguide layer 104, electron blocking layer 105, and upper confinement layer 106 include any one or any combination of GaN, AlGaN, InGaN, AlInGaN, AlN, InN, AlInN, SiC, Ga2O3, BN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, AlInAs, AlInP, AlGaP, and InGaP; the semiconductor laser element This includes semiconductor deep ultraviolet lasers with emission wavelengths of 200nm to 300nm, semiconductor ultraviolet lasers with emission wavelengths of 300nm to 420nm, semiconductor blue lasers with emission wavelengths of 420nm to 480nm, semiconductor green lasers with emission wavelengths of 500nm to 550nm, semiconductor red and yellow lasers with emission wavelengths of 550nm to 700nm, semiconductor infrared lasers with emission wavelengths of 800nm ​​to 1000nm, and semiconductor far-infrared lasers with emission wavelengths of 1000nm to 1600nm.

[0034] The substrate 100 includes any one of sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, sapphire / SiO2 composite substrate, sapphire / AlN composite substrate, sapphire / SiNx, sapphire / SiO2 / SiNx composite substrate, magnesium aluminum spinel MgAl2O4, MgO, ZnO, ZrB2, LiAlO2, and LiGaO2 composite substrate.

[0035] Example 3

[0036] Please see Figure 1This embodiment provides a technical solution: a semiconductor laser element with a conductive phase change layer, which includes, from bottom to top, a substrate 100, a lower confinement layer 101, a lower waveguide layer 102, an active layer 103, an upper waveguide layer 104, an electron blocking layer 105, an upper confinement layer 106, and a conductive phase change layer 107 between the lower waveguide layer 102 and the lower confinement layer 101 and between the active layer 103 and the lower waveguide layer 102.

[0037] A conductive phase transition layer 107 is provided between the active layer 103 and the lower waveguide layer 102, and between the lower confinement layer 101 and the lower waveguide layer 102. The conductive phase transition layer has a reversibly tunable phase transition field, which regulates the phase transition during high and low temperature changes in epitaxial growth, thereby increasing the phase transition rate from the minute level to the picosecond level, reducing resistivity and carrier barrier, reducing single transverse mode lasing current and threshold voltage, and reducing conductance jump, junction voltage jump and series resistance drop caused by symmetry breaking. At the same time, the conductive phase transition layer also has a reversibly tunable strain field, which improves the uneven distribution of thermal stress, suppresses In composition fluctuations and segregation in the active layer, improves the interface quality of the active layer, improves thermal stability and suppresses optical catastrophic damage, enhances the confinement factor of the laser element, and improves the lasing power and slope efficiency of the laser element.

[0038] Any combination of the conductive phase transition layer 107 includes, but is not limited to, the following ternary combinations of heterojunctions, superlattices, quantum wells, core-shell structures, quantum dots, etc.: H x VO2 / InVO4 / CoF2O4,H x VO2 / InVO4 / VO2,H x VO2 / InVO4 / FeHCF,H x VO2 / CoF2O4 / VO2,H x VO2 / CoF2O4 / FeHCF,H x VO2 / VO2 / FeHCF,InVO4 / CoF2O4 / VO2,InVO4 / CoF2O4 / FeHCF,InVO4 / VO2 / FeHCF,CoF2O4 / VO2 / FeHCF.

[0039] The lower confinement layer 101, lower waveguide layer 102, active layer 103, upper waveguide layer 104, electron blocking layer 105, and upper confinement layer 106 include any one or any combination of GaN, AlGaN, InGaN, AlInGaN, AlN, InN, AlInN, SiC, Ga2O3, BN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, AlInAs, AlInP, AlGaP, and InGaP; the semiconductor laser element This includes semiconductor deep ultraviolet lasers with emission wavelengths of 200nm to 300nm, semiconductor ultraviolet lasers with emission wavelengths of 300nm to 420nm, semiconductor blue lasers with emission wavelengths of 420nm to 480nm, semiconductor green lasers with emission wavelengths of 500nm to 550nm, semiconductor red and yellow lasers with emission wavelengths of 550nm to 700nm, semiconductor infrared lasers with emission wavelengths of 800nm ​​to 1000nm, and semiconductor far-infrared lasers with emission wavelengths of 1000nm to 1600nm.

[0040] The substrate 100 includes any one of sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, sapphire / SiO2 composite substrate, sapphire / AlN composite substrate, sapphire / SiNx, sapphire / SiO2 / SiNx composite substrate, magnesium aluminum spinel MgAl2O4, MgO, ZnO, ZrB2, LiAlO2, and LiGaO2 composite substrate.

[0041] Example 4

[0042] Please see Figure 1 This embodiment provides a technical solution: a semiconductor laser element with a conductive phase change layer, which includes, from bottom to top, a substrate 100, a lower confinement layer 101, a lower waveguide layer 102, an active layer 103, an upper waveguide layer 104, an electron blocking layer 105, an upper confinement layer 106, and a conductive phase change layer 107 between the lower waveguide layer 102 and the lower confinement layer 101 and between the active layer 103 and the lower waveguide layer 102.

[0043] A conductive phase transition layer 107 is provided between the active layer 103 and the lower waveguide layer 102, and between the lower confinement layer 101 and the lower waveguide layer 102. The conductive phase transition layer has a reversibly tunable phase transition field, which regulates the phase transition during high and low temperature changes in epitaxial growth, thereby increasing the phase transition rate from the minute level to the picosecond level, reducing resistivity and carrier barrier, reducing single transverse mode lasing current and threshold voltage, and reducing conductance jump, junction voltage jump and series resistance drop caused by symmetry breaking. At the same time, the conductive phase transition layer also has a reversibly tunable strain field, which improves the uneven distribution of thermal stress, suppresses In composition fluctuations and segregation in the active layer, improves the interface quality of the active layer, improves thermal stability and suppresses optical catastrophic damage, enhances the confinement factor of the laser element, and improves the lasing power and slope efficiency of the laser element.

[0044] Any combination of the conductive phase transition layer 107 includes, but is not limited to, the following quaternary combinations of heterojunctions, superlattices, quantum wells, core-shell structures, quantum dots, etc.: H x VO2 / InVO4 / CoF2O4 / VO2,H x VO2 / InVO4 / CoF2O4 / FeHCF,InVO4 / CoF2O4 / VO2 / FeHCF.

[0045] Example 5

[0046] Please see Figure 1 This embodiment provides a technical solution: a semiconductor laser element with a conductive phase change layer, which includes, from bottom to top, a substrate 100, a lower confinement layer 101, a lower waveguide layer 102, an active layer 103, an upper waveguide layer 104, an electron blocking layer 105, an upper confinement layer 106, and a conductive phase change layer 107 between the lower waveguide layer 102 and the lower confinement layer 101 and between the active layer 103 and the lower waveguide layer 102.

[0047] A conductive phase transition layer 107 is provided between the active layer 103 and the lower waveguide layer 102, and between the lower confinement layer 101 and the lower waveguide layer 102. The conductive phase transition layer has a reversibly tunable phase transition field, which regulates the phase transition during high and low temperature changes in epitaxial growth, thereby increasing the phase transition rate from the minute level to the picosecond level, reducing resistivity and carrier barrier, reducing single transverse mode lasing current and threshold voltage, and reducing conductance jump, junction voltage jump and series resistance drop caused by symmetry breaking. At the same time, the conductive phase transition layer also has a reversibly tunable strain field, which improves the uneven distribution of thermal stress, suppresses In composition fluctuations and segregation in the active layer, improves the interface quality of the active layer, improves thermal stability and suppresses optical catastrophic damage, enhances the confinement factor of the laser element, and improves the lasing power and slope efficiency of the laser element.

[0048] Any combination of the conductive phase transition layer 107 includes, but is not limited to, the following five-element combinations of heterojunctions, superlattices, quantum wells, core-shell structures, quantum dots, etc.: H x VO2 / InVO4 / CoF2O4 / VO2 / FeHCF.

[0049] The lower confinement layer 101, lower waveguide layer 102, active layer 103, upper waveguide layer 104, electron blocking layer 105, and upper confinement layer 106 include any one or any combination of GaN, AlGaN, InGaN, AlInGaN, AlN, InN, AlInN, SiC, Ga2O3, BN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, AlInAs, AlInP, AlGaP, and InGaP; the semiconductor laser element This includes semiconductor deep ultraviolet lasers with emission wavelengths of 200nm to 300nm, semiconductor ultraviolet lasers with emission wavelengths of 300nm to 420nm, semiconductor blue lasers with emission wavelengths of 420nm to 480nm, semiconductor green lasers with emission wavelengths of 500nm to 550nm, semiconductor red and yellow lasers with emission wavelengths of 550nm to 700nm, semiconductor infrared lasers with emission wavelengths of 800nm ​​to 1000nm, and semiconductor far-infrared lasers with emission wavelengths of 1000nm to 1600nm.

[0050] The substrate 100 includes any one of sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, sapphire / SiO2 composite substrate, sapphire / AlN composite substrate, sapphire / SiNx, sapphire / SiO2 / SiNx composite substrate, magnesium aluminum spinel MgAl2O4, MgO, ZnO, ZrB2, LiAlO2, and LiGaO2 composite substrate.

[0051] Experimental Example 1:

[0052] The green laser experiment was conducted using the technical solution in Example 1, and the conductive phase transition layer was MoS2-MoO2.

[0053] Experimental Example 2:

[0054] The green laser experiment was conducted using the technical solution described in Example 2, with the conductive phase transition layer being MoS2-MoO2 / MoS2-MoN. x Conduct experiments;

[0055] Experimental Example 3:

[0056] The green laser experiment was conducted using the technical solution described in Example 3, with the conductive phase transition layer being MoS2-MoO2 / MoS2-MoN.x Experiments were conducted using / MoS2-MoSe2;

[0057] Experiment Example 4:

[0058] The green laser experiment was conducted using the technical solution in Example 4, and the conductive phase transition layer adopted...

[0059] MoS2-MoO2 / MoS2-MoN x Experiments were conducted using / MoS2-MoSe2 / MoS2-Mo2C;

[0060] Experimental Example 5:

[0061] The green laser experiment was conducted using the technical solution described in Example 5, with the conductive phase transition layer being MoS2-MoO2 / MoS2-MoN. x Experiments were conducted on / MoS2-MoSe2 / MoS2-Mo2C / MoS2-MoP;

[0062] The data for Experiments 1-5 are as follows:

[0063]

[0064]

[0065] The average values ​​of the data in Experiments 1-5 are compared with those of traditional laser elements as follows:

[0066] Green laser components - project Traditional laser components The laser element of this invention range of change Slope efficiency (W / A) 0.71 1.27 79％ <![CDATA[Threshold current density (kA / cm 2 )]]> 1.53 1.09 -29％ Optical power (W) 0.77 1.39 81％ Limiting factors 1.78％ 2.79％ 57％ Threshold voltage (V) 6.8 4.2 -38％

[0067] The slope efficiency of the green laser element increased from 0.71 W / A to 1.27 W / A, an improvement of 79%; the threshold current density increased from 1.53 kA / cm². 2 Reduced to 1.09 kA / cm 2 The optical power increased from 0.77W to 1.39W, the confinement factor increased from 1.78% to 2.79%, and the threshold voltage decreased from 6.8V to 4.2V.

[0068] Compared to existing technologies, a conductive phase transition layer is provided between the active layer and the lower waveguide layer, as well as between the lower confinement layer and the lower waveguide layer. This conductive phase transition layer has a reversibly modulated phase transition field, which regulates the phase transition during high and low temperature changes in epitaxial growth, increasing the phase transition rate from the minute level to the picosecond level. This reduces resistivity and carrier barrier, lowers single transverse mode lasing current and threshold voltage, and reduces conductance jumps, junction voltage jumps, and series resistance drops caused by symmetry breaking. At the same time, the conductive phase transition layer also has a reversibly modulated strain field, which improves the uneven distribution of thermal stress, suppresses In composition fluctuations and segregation in the active layer, improves the interface quality of the active layer, enhances thermal stability and suppresses optical catastrophic damage, strengthens the confinement factor of the laser element, and improves the lasing power and slope efficiency of the laser element.

[0069] The above embodiments are only used to illustrate the present invention and are not intended to limit the technical solutions described herein. Although the present invention has been described in detail with reference to the above embodiments, the present invention is not limited to the specific embodiments described above. Therefore, any modifications or equivalent substitutions to the present invention, as well as all technical solutions and improvements that do not depart from the spirit and scope of the invention, are covered within the scope of the claims of the present invention.

Claims

1. A semiconductor laser device having a conductive phase transition layer, comprising, from bottom to top, a substrate (100), a lower confinement layer (101), a lower waveguide layer (102), an active layer (103), an upper waveguide layer (104), an electron blocking layer (105), and an upper confinement layer (106), characterized in that: A conductive phase change layer (107) is provided between the lower waveguide layer (102) and the lower confinement layer (101) and between the active layer (103) and the lower waveguide layer (102).

2. A semiconductor laser element with a conductive phase transition layer as described in claim 1, characterized in that, The conductive phase change layer (107) is H x Any two or more combinations of VO2, InVO4, CoF2O4, VO2, and FeHCF.

3. A semiconductor laser element with a conductive phase transition layer as described in claim 2, characterized in that, Any combination of the conductive phase change layer (107) includes, but is not limited to, the following binary combinations of heterojunctions, superlattices, quantum wells, core-shell structures, quantum dots, etc.: H x VO2 / InVO4,H x VO2 / CoF2O4,H x VO2 / VO2,H x VO2 / FeHCF,InVO4 / CoF2O4,InVO4 / VO2,InVO4 / FeHCF,CoF2O4 / VO2,CoF2O4 / FeHCF,VO2 / FeHCF.

4. A semiconductor laser element with a conductive phase transition layer as described in claim 2, characterized in that, Any combination of the conductive phase transition layer (107) includes, but is not limited to, the following ternary combinations of heterojunctions, superlattices, quantum wells, core-shell structures, quantum dots, etc.: H x VO2 / InVO4 / CoF2O4,H x VO2 / InVO4 / VO2,H x VO2 / InVO4 / FeHCF, H x VO2 / CoF2O4 / VO2,H x VO2 / CoF2O4 / FeHCF,H x VO2 / VO2 / FeHCF,InVO4 / CoF2O4 / VO2,InVO4 / CoF2O4 / FeHCF,InVO4 / VO2 / FeHCF,CoF2O4 / VO2 / FeHCF。 5. A semiconductor laser element with a conductive phase transition layer as described in claim 2, characterized in that, Any combination of the conductive phase transition layer (107) includes, but is not limited to, the following quaternary combinations of heterojunctions, superlattices, quantum wells, core-shell structures, quantum dots, etc.: H x VO2 / InVO4 / CoF2O4 / VO2,H x VO2 / InVO4 / CoF2O4 / FeHCF,InVO4 / CoF2O4 / VO2 / FeHCF.

6. A semiconductor laser element with a conductive phase transition layer as described in claim 2, characterized in that, Any combination of the conductive phase transition layer (107) includes, but is not limited to, the following five-element combinations of heterojunctions, superlattices, quantum wells, core-shell structures, quantum dots, etc.: H x VO2 / InVO4 / CoF2O4 / VO2 / FeHCF.

7. A semiconductor laser element with a conductive phase transition layer as described in claim 1, characterized in that, The conductive phase transition layer (107) has a reversibly tunable phase transition field, which regulates the phase transition during high and low temperature changes in epitaxial growth, thereby increasing the phase transition rate from the minute level to the picosecond level, reducing resistivity and carrier barrier, reducing single transverse mode lasing current and threshold voltage, and reducing conductance jump, junction voltage jump and series resistance drop caused by symmetry breaking. At the same time, the conductive phase transition layer also has a reversibly tunable strain field, which improves the uneven distribution of thermal stress, suppresses In composition fluctuations and segregation in the active layer, improves the interface quality of the active layer, improves thermal stability and suppresses optical catastrophic damage, enhances the confinement factor of the laser element, and improves the lasing power and slope efficiency of the laser element.

8. A semiconductor laser element with a conductive phase transition layer as described in claim 1, characterized in that, The thickness of the conductive phase change layer (107) is 5–500 nm.

9. A semiconductor laser element with a conductive phase transition layer as described in claim 1, characterized in that, The lower confinement layer (101), lower waveguide layer (102), active layer (103), upper waveguide layer (104), electron blocking layer (105), and upper confinement layer (106) include any one or any combination of GaN, AlGaN, InGaN, AlInGaN, AlN, InN, AlInN, SiC, Ga2O3, BN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, AlInAs, AlInP, AlGaP, and InGaP; the semi-... The conductor laser element includes a semiconductor deep ultraviolet laser with an emission wavelength of 200nm to 300nm, a semiconductor ultraviolet laser with an emission wavelength of 300nm to 420nm, a semiconductor blue laser with an emission wavelength of 420nm to 480nm, a semiconductor green laser with an emission wavelength of 500nm to 550nm, a semiconductor red and yellow laser with an emission wavelength of 550nm to 700nm, a semiconductor infrared laser with an emission wavelength of 800nm ​​to 1000nm, and a semiconductor far-infrared laser with an emission wavelength of 1000nm to 1600nm.

10. A semiconductor laser element with a conductive phase transition layer as described in claim 1, characterized in that, The substrate (100) includes any one of sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, sapphire / SiO2 composite substrate, sapphire / AlN composite substrate, sapphire / SiNx, sapphire / SiO2 / SiNx composite substrate, magnesium aluminum spinel MgAl2O4, MgO, ZnO, ZrB2, LiAlO2 and LiGaO2 composite substrate.

Images