High power semiconductor laser fiber coupling system based on total reflection
By using a high-power semiconductor laser fiber coupling system with total internal reflection, and by utilizing components of total internal reflection and optical path deflection, the complexities of beam shaping devices and angle control in existing technologies are solved, achieving high-power beam output and simplifying device structure.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- WEIFANG ADVANCED OPTOELECTRONIC CHIP RES INST
- Filing Date
- 2023-06-07
- Publication Date
- 2026-05-29
AI Technical Summary
In the prior art, the beam shaping devices of high-power semiconductor lasers are complex, have long optical paths, and require strict control of the refractive index and tilt angle of the shaping devices, which leads to inconvenience in operation.
A high-power semiconductor laser fiber coupling system based on total internal reflection is adopted. By using several sets of semiconductor laser stacked modules, collimating mirror array, dichroic mirror and total internal reflection isosceles right-angle prism group, the beam is shaped and combined, simplifying the device structure. Through total internal reflection and optical path deflection, the control of refractive index and tilt angle is simplified.
It achieves high power output and beam quality maintenance, simplifies device structure, reduces the need for strict control over refractive index and tilt angle, and makes the device simple and compact.
Smart Images
Figure CN116667154B_ABST
Abstract
Description
Technical Field
[0001] This invention relates to the field of semiconductor lasers, and more specifically to a high-power semiconductor laser fiber coupling system based on total internal reflection. Background Technology
[0002] Semiconductor lasers possess advantages such as high efficiency, small size, long lifespan, wide wavelength range, and direct electrical drive, making them widely used in industrial, military, medical, and communication fields. With the development of semiconductor laser-pumped solid-state laser technology and semiconductor laser-pumped fiber technology, obtaining high-brightness, high-power semiconductor laser pump sources has become extremely important.
[0003] Currently, the main method to improve the beam quality of high-power semiconductors is through geometric beam shaping technology, which involves cutting and rearranging the slow-axis beam to fill the dark areas between bars. Although many published patents involve beam shaping of multiple bars, they generally suffer from problems such as complex shaping devices, long optical paths, and difficulties in operation, and require strict control over the refractive index and tilt angle of the shaping devices. Summary of the Invention
[0004] The purpose of this invention is to provide a high-power semiconductor laser fiber coupling system based on total internal reflection to achieve beam shaping.
[0005] To achieve the above objectives, the present invention adopts the following technical solution:
[0006] A high-power semiconductor laser fiber coupling system based on total internal reflection is characterized by: comprising several sets of semiconductor laser stacked modules, several collimating mirror arrays for semiconductor laser stacking collimation, and dichroic mirrors for wavelength beam combining; each set of stacked modules includes several stacked arrays; several sets of isosceles right-angle prisms with total internal reflection are used to fill the dark area in the fast axis direction, and a beam-shrinking device is used to compress the light width in the fast axis; each reflecting mirror is used to fold the optical path, and a focusing mirror is used to couple the beam into the multimode fiber.
[0007] As a preferred embodiment, two sets of stacked modules are used, each set comprising two arrays, each array consisting of eight mini-bars with a bar spacing of 1.8 mm. Each mini-bar in the array is collimated along both the fast and slow axes. Two arrays with the same wavelength are used to fill the dark area along the fast axis using an isosceles right-angle prism group. A reflecting mirror is used to refract the optical path. A dichroic mirror is used to combine the wavelengths of the stacked modules. A beam-shrinking device is used for beam shrinking along the fast axis, and then an aspherical focusing lens couples the beam into the optical fiber.
[0008] As a preferred embodiment, the wavelengths of the two sets of semiconductor laser array modules are respectively Two arrays with the same wavelength form a semiconductor laser array module. The bar is a mini-bar.
[0009] As a preferred embodiment, each collimating lens array includes a fast-axis collimating lens and a slow-axis collimating lens placed sequentially, wherein the fast-axis collimating lens is an aspherical microcylindrical lens and the slow-axis collimating lens is a microlens array.
[0010] As a preferred embodiment, the surface of the dichroic mirror is coated with... The first, second, and third reflecting mirrors are coated with a high-reflectivity film to deflect the light beam by 90°.
[0011] As a preferred embodiment, the hypotenuse length of the isosceles right-angle prism group is at least twice the width of the slow-axis beam of the incident light source.
[0012] The thickness of each isosceles right-angle prism in the isosceles right-angle prism group is at least equal to the thickness of the incident light spot along the fast axis. The height difference between adjacent isosceles right-angle prisms along the fast axis is equal to twice the height difference of the incident light spot along the fast axis.
[0013] Preferably, the focusing lens is an aspherical focusing lens, which couples the light beam into the target optical fiber. The beam-shrinking device consists of an arrangement of a plano-convex cylindrical lens and a plano-concave cylindrical lens.
[0014] As a preferred embodiment, in the isosceles right-angle prism group, a single prism group is composed of several isosceles right-angle prisms arranged at intervals along the vertical direction, stacked and fixed together.
[0015] Each set of stacked incident light spots with the same wavelength has one spot corresponding to the hypotenuse of the isosceles right-angle prism group, and the other spot corresponding to the right-angle side of the isosceles right-angle prism group.
[0016] The semiconductor laser array module consists of the following components: array 1, collimating mirror array 1, isosceles right-angle prism group 1, first reflecting mirror, dichroic mirror, second reflecting mirror, beam shrinking device, third reflecting mirror, and focusing mirror, which are sequentially installed inside the machine. The first laser beam passes through the above structure in sequence, and the laser beam is transmitted in a straight line through the isosceles right-angle prism group 1.
[0017] The semiconductor laser array module consists of array two, collimating lens array two, and isosceles right-angle prism group one, which are installed sequentially inside the machine. The second laser beam passes through the machine in the above structural order. The laser beam is reflected twice in isosceles right-angle prism group one and then combined with the laser beam emitted by array one. The laser beam of array one has the same wavelength as the laser beam of array two.
[0018] The advantages of this invention are that it does not require strict control of the refractive index and tilt angle of the shaping device, the device is simple, it can achieve dense arrangement of fast-axis beams, and it has high power and small system module size.
[0019] Each semiconductor laser array module has the same wavelength. This semiconductor laser fiber coupling system can achieve high power output while achieving beam shaping. Compared with traditional methods, it has a simple and compact structure. Attached Figure Description
[0020] Figure 1 This is a schematic diagram of a high-power semiconductor laser fiber coupling system based on total internal reflection;
[0021] Figure 2 This is a three-dimensional schematic diagram of the isosceles right-angled prism structure of a high-power semiconductor laser fiber coupling system based on total internal reflection (the hypotenuse of the isosceles right-angled triangle is shown in the foreground).
[0022] Figure 3 A schematic diagram of the propagation path of a single output beam from a semiconductor laser array through an isosceles right-angle prism group;
[0023] Figure 4 This is a schematic diagram of fast-axis beam contraction in a high-power semiconductor laser fiber-coupled system based on total internal reflection;
[0024] In the figure, semiconductor laser array 1, semiconductor laser array 2, semiconductor laser array 3, semiconductor laser array 4, collimating lens array 1, collimating lens array 2, collimating lens array 3, collimating lens array 4, isosceles right-angle prism group 1, isosceles right-angle prism group 2, dichroic mirror 11, first reflecting mirror 12, second reflecting mirror 13, third reflecting mirror 14, plano-convex cylindrical lens in the beam shrinking device 15, plano-concave cylindrical lens in the beam shrinking device 16, focusing lens 17, multimode fiber 18. Detailed Implementation
[0025] The present invention will now be further described with reference to the accompanying drawings.
[0026] Reference Figure 1 The high-power semiconductor laser fiber coupling system based on total internal reflection in this embodiment includes semiconductor laser array 1, semiconductor laser array 2, semiconductor laser array 3, semiconductor laser array 4, collimating lens array 5, collimating lens array 6, collimating lens array 7, collimating lens array 8, isosceles right-angle prism group 9, isosceles right-angle prism group 10, dichroic mirror 11, first reflecting mirror 12, second reflecting mirror 13, third reflecting mirror 14, plano-convex cylindrical lens 15 in the beam-shrinking device, plano-concave cylindrical lens 16 in the beam-shrinking device, focusing lens 17, and multimode fiber 18.
[0027] This high-power semiconductor laser fiber coupling system based on total internal reflection employs two sets of semiconductor laser stacked modules. Each set of stacked modules includes two stacked modules 1 and 2 or 3 and 4. Each stacked module consists of 8 mini-bars with a bar spacing of 1.8 mm. Each mini-bar in the stacked module is collimated by fast and slow axis collimating lens arrays 5, 6, 7, and 8. Every two stacked modules with the same wavelength fill the dark area in the fast axis direction through isosceles right-angle prism groups 9 and 10. The optical path is folded through mirrors 12, 13, and 14. The stacked modules with different wavelengths are combined by a dichroic mirror 11. The plano-convex cylindrical lens 15 and plano-concave cylindrical lens 16 in the beam-shrinking device are used for beam shrinking in the fast axis direction, and then the beam is coupled into the multimode fiber 18 through an aspherical focusing lens 17.
[0028] The laser outputs of semiconductor laser array 1, semiconductor laser array 2, semiconductor laser array 3, and semiconductor laser array 4 are collimated by collimating lens array 5, collimating lens array 6, collimating lens array 7, and collimating lens array 8, respectively.
[0029] The wavelengths of the two sets of semiconductor laser array modules are respectively Two arrays with the same wavelength form a semiconductor laser array module. The bar is a mini-bar.
[0030] Each of the collimating lens arrays (5), (6), (7), and (8) includes a fast-axis collimating lens and a slow-axis collimating lens placed in sequence, wherein the fast-axis collimating lens is an aspherical microcylindrical lens and the slow-axis collimating lens is a microlens array.
[0031] The surface of the dichroic mirror is coated with... The first, second, and third reflecting mirrors are coated with a high-reflectivity film to deflect the light beam by 90°.
[0032] The hypotenuse length of the isosceles right-angle prism assembly is at least twice the width of the slow-axis beam of the incident light source.
[0033] The thickness of each isosceles right-angle prism in the isosceles right-angle prism group is at least equal to the thickness of the incident light spot along the fast axis. The height difference between adjacent isosceles right-angle prisms along the fast axis is equal to twice the height difference of the incident light spot along the fast axis.
[0034] The focusing lens is an aspherical focusing lens, whose function is to couple the light beam into the target optical fiber. The beam-shrinking device is composed of an arrangement of a plano-convex cylindrical lens and a plano-concave cylindrical lens.
[0035] In the isosceles right-angle prism assembly, a single prism assembly consists of eight isosceles right-angle prisms arranged at intervals along a vertical direction, stacked and fixed together. See Figure 2 .
[0036] Each set of stacked incident light spots with the same wavelength has one spot corresponding to the hypotenuse of the isosceles right-angle prism group, and the other spot corresponding to the right-angle side of the isosceles right-angle prism group.
[0037] The semiconductor laser array module consists of array 1, collimating mirror array 5, isosceles right-angle prism group 9, first reflecting mirror 12, dichroic mirror 11, second reflecting mirror 13, beam shrinking device, third reflecting mirror 14, and focusing mirror 17, which are sequentially installed inside the machine. The first laser beam passes through the machine in the above structural order, and the laser beam is transmitted in a straight line through the isosceles right-angle prism group 9.
[0038] The semiconductor laser array module consists of array 2, collimating lens array 6, and isosceles right-angle prism group 9, which are sequentially installed inside the machine. The second laser beam passes through the machine in the above structural order. The laser beam is reflected twice in the isosceles right-angle prism group 9 and then combined with the laser beam emitted by array 1. The laser beam of array 1 has the same wavelength as the laser beam of array 2.
[0039] The semiconductor laser array module consists of array four (4), collimating lens array four (8), isosceles right-angle prism group two (10), and dichroic mirror (11) installed in sequence inside the machine. The fourth laser passes through in the above structural order. The laser passes through the isosceles right-angle prism group two (10) in a straight line and is combined with the laser of array one (1) by the dichroic mirror (11). The laser of array one has a different wavelength than the laser of array four.
[0040] The semiconductor laser array module consists of array three (3), collimating lens array three (7), and isosceles right-angle prism group two (10) installed in sequence inside the machine body. The third laser passes through in the above structural order. The laser is reflected twice in isosceles right-angle prism group two (10) and then combined with the laser of array four (4). The laser of array three has the same wavelength as the laser of array four.
[0041] The incident surfaces of the lenses and prisms are coated with anti-reflection coatings, and the reflecting surfaces are coated with anti-reflection coatings.
[0042] Dichroic mirror 11 combines the wavelengths of two sets of semiconductor laser arrays with different wavelengths.
[0043] like Figure 3 The isosceles right-angle prism group 9 and isosceles right-angle prism group 10 utilize total internal reflection to fill the collimated beam along the fast axis, thereby doubling the optical power while maintaining the beam quality along the fast axis.
[0044] like Figure 4 As shown, the plano-convex cylindrical lens 15 and plano-concave cylindrical lens 16 in the beam-shrinking device double the remaining divergence angle of the fast axis, while the size of the fast axis spot becomes half of its original size. The spot before focusing is approximately a square spot.
[0045] The combined light spot is coupled into the multimode fiber 18 through the focusing lens 17 to achieve high power output.
Claims
1. A high-power semiconductor laser fiber coupling system based on total internal reflection, characterized in that: It includes several sets of semiconductor laser stacked modules, several collimating mirror arrays (5, 6, 7, 8) for semiconductor laser stacking collimation, and a dichroic mirror (11) for wavelength beam combining; each stacked module includes several stacked arrays; several isosceles right-angle prism groups (9, 10) are used to fill the dark area in the fast axis direction, and a beam-shrinking device is used to compress the light width in the fast axis; each reflector (12, 13, 14) is used to fold the optical path, and a focusing mirror (17) is used to couple the beam into the multimode fiber (18); Two sets of semiconductor laser array modules are used, each set of modules includes two arrays, and each array consists of 8 mini-bars. Each mini-bar in the array is collimated along the fast and slow axes. Every two arrays with the same wavelength fill the dark area in the fast axis direction through an isosceles right-angle prism group. The optical path is folded by a mirror. The array modules with different wavelengths are combined by a dichroic mirror. A beam-shrinking device is used to shrink the beam in the fast axis direction, and then the beam is coupled into the optical fiber through an aspherical focusing lens. The components used for the first laser path are: the semiconductor laser array module array one (1), the collimating mirror array one (5), the isosceles right angle prism group one (9), the first reflecting mirror (12), the dichroic mirror (11), the second reflecting mirror (13), the beam shrinking device, the third reflecting mirror (14), and the focusing mirror (17) are installed in sequence in the machine body. The first laser path passes through in the above structural order, and the laser passes through the isosceles right angle prism group one (9) in a straight line. The components used for the second laser beam are: the second stacked array (2) of the semiconductor laser stacked module, the second collimating lens array (6), and the first isosceles right-angle prism group (9) are installed in sequence in the machine body. The second laser beam passes through the machine body in the above structural order. The laser beam is reflected twice in the first isosceles right-angle prism group (9) and then combined with the laser beam emitted by the first stacked array (1). The laser beam of the first stacked array has the same wavelength as the laser beam of the second stacked array. The components used for the fourth laser are: the semiconductor laser stacked module, the fourth stack (4), the collimating lens array (8), the second isosceles right-angle prism group (10), and the dichroic mirror (11). These components are installed in sequence inside the machine. The fourth laser passes through the machine in the above structural order. The laser passes through the second isosceles right-angle prism group (10) in a straight line and is combined with the laser of the first stack (1) by the dichroic mirror (11). The laser of the first stack has a different wavelength than the laser of the fourth stack. The components used for the third laser beam are: the semiconductor laser stacked array module three (3), the collimating lens array three (7), and the isosceles right angle prism group two (10) are installed in the machine body in sequence. The third laser beam passes through the machine body in the above structural order. The laser beam is reflected twice in the isosceles right angle prism group two (10) and then combined with the laser beam of the stacked array four (4). The laser beam of the stacked array three has the same wavelength as the laser beam of the stacked array four. The hypotenuse length of the isosceles right-angle prism group (9, 10) is at least twice the width of the slow-axis beam of the incident light source; the thickness of the isosceles right-angle prism in the isosceles right-angle prism group is at least equal to the thickness of the incident light spot along the fast axis; the height difference between adjacent isosceles right-angle prisms along the fast axis is equal to twice the height difference of the incident light spot along the fast axis.
2. The high-power semiconductor laser fiber coupling system based on total internal reflection according to claim 1, characterized in that: The wavelengths of the two sets of semiconductor laser array modules are λ1 and λ2, respectively. Two arrays with the same wavelength constitute a set of semiconductor laser array modules.
3. The high-power semiconductor laser fiber coupling system based on total internal reflection according to claim 1, characterized in that: Each collimating lens array (5, 6, 7, 8) includes a fast-axis collimating lens and a slow-axis collimating lens placed in sequence. The fast-axis collimating lens is an aspherical microcylindrical lens, and the slow-axis collimating lens is a microlens array.
4. The high-power semiconductor laser fiber coupling system based on total internal reflection according to claim 1, characterized in that: The dichroic mirror (11) is coated with an optical thin film that passes through the λ1 band and reflects the λ2 band; the first, second, and third mirrors (12, 13, 14) are coated with high-reflection films to fold the light beam 90°.
5. The high-power semiconductor laser fiber coupling system based on total internal reflection according to claim 1, characterized in that: The focusing lens (17) is an aspherical focusing lens that couples the beam into the target fiber (18); the beam-shrinking device consists of a plano-convex cylindrical lens (15) and a plano-concave cylindrical lens (16) arranged in sequence.
6. The high-power semiconductor laser fiber coupling system based on total internal reflection according to claim 1, characterized in that: In the isosceles right-angle prism group (9, 10), a single prism group is composed of several isosceles right-angle prisms arranged at intervals along the vertical direction, stacked and fixed; the incident light spots of each stacked array with the same wavelength, one light spot corresponds to the hypotenuse of the isosceles right-angle prism group, and the other light spot corresponds to the right-angle side of the isosceles right-angle prism group.