Sputtering apparatus, sputtering apparatus control method and sputtering apparatus control device

Abstract

One aspect of the sputtering apparatus of the present invention comprises: one or more targets disposed facing a substrate and made of a film-forming material; one or more magnet units disposed on the back side of the targets; a control device having an optimal solution calculation unit that calculates an optimal solution for the setting conditions of at least one of the magnet units based on input information including at least setting conditions and a measurement value of the film quality of the film-forming material on the substrate formed by the sputtering apparatus, the setting conditions including at least one of the position of each magnet unit, the movement mode of each magnet unit, and the current flowing into or the current variation mode of the electromagnet constituting each magnet unit; and an adjustment unit capable of individually adjusting the setting conditions of the magnet units based on the optimal solution.

Description

Technical Field

[0001] The present invention relates to a sputtering apparatus having a cathode having one or more magnet units disposed on the back side of a target, a control method thereof, and a control device for the sputtering apparatus. Background Technology

[0002] As a film deposition apparatus for large-area substrates, magnetron sputtering apparatuses are known to arrange one or more magnet units on the back side (non-sputtering surface) of a target. The deposition homogeneity (e.g., film thickness, thin film resistivity) of the substrate surface deposited by the magnetron sputtering apparatus is an important performance factor of the substrate, and maintaining this homogeneity is an extremely important function required by the sputtering apparatus.

[0003] In magnetron sputtering apparatuses, the higher the horizontal magnetic flux density (magnetic flux density orthogonal to the electric field) on the target surface (sputtering surface), the higher the plasma erosion rate of the target surface. Consequently, more film-forming material is released from the target surface, enabling high-speed film deposition onto the substrate surface. Typically, there is a tendency that on the target surface, regions with higher horizontal magnetic flux density exhibit relatively higher deposition rates onto the substrate surface regions facing those regions compared to other surface regions.

[0004] Therefore, when depositing films on large substrates using magnetron sputtering, the distribution of the horizontal magnetic field density has a significant impact on the homogeneity of the film within the substrate surface. To achieve homogeneous film deposition, it is necessary to appropriately set the position or movement mode of the magnet units, as well as the magnetic force intensity or magnetic force intensity variation mode.

[0005] As a method for homogenizing the film by setting the position or movement pattern of the magnet units, known methods include: techniques for reciprocating the magnet units along the back side of the target (e.g., see Patent Document 1), and techniques for moving the magnet units in a direction that is close to separation from the back side of the target (e.g., see Patent Document 2). Furthermore, Patent Document 3 discloses a rotating cathode having a cylindrical target and a plurality of magnet units disposed therein, wherein the surface of the target is rotated circumferentially, causing the portion forming the magnetic field to scan circumferentially along the surface of the target.

[0006] Existing technical documents

[0007] Patent documents

[0008] Patent Document 1: Japanese Patent Application Publication No. 2000-239841;

[0009] Patent Document 2: Japanese Patent Application Publication No. 2020-200525;

[0010] Patent document 3: Japanese Patent Application Publication No. 2016-113646. Summary of the Invention

[0011] The problem the invention aims to solve

[0012] The shape of the target surface changes as erosion progresses, and therefore the distribution of the film also changes over time. Therefore, in order to maintain the homogeneity of the film, it is necessary to continuously set the optimal position or movement pattern of the magnet units, as well as the magnetic intensity or magnetic intensity variation pattern, over time.

[0013] However, the rate of erosion is influenced by various factors, including pressure, applied voltage, sputtering gas flow rate, target material, and target quality variations, making accurate prediction of erosion difficult. Furthermore, erosion occurs faster in regions with higher horizontal magnetic flux density, thus amplifying the difference between predicted and actual erosion over time.

[0014] Therefore, it is difficult to pre-set the optimal position or movement pattern of the magnet units, as well as the magnetic intensity or magnetic intensity variation pattern, as a function of time. In reality, it is necessary to periodically check the deposition state of the substrate, stop the device, and perform a series of operations to adjust the position or movement pattern of the magnet units and the magnetic intensity or magnetic intensity variation pattern. Implementing this operation is one reason for the decrease in device operating rate, and the larger the substrate, the more pronounced this problem becomes.

[0015] Furthermore, even industrial products manufactured under the same design inevitably exhibit individual differences. Therefore, when multiple sputtering units are installed, it becomes apparent that even if all identifiable film formation conditions are standardized, the film distribution will not be uniform. In such cases, it is necessary to adjust the position or movement mode of the magnet units, as well as the magnetic force intensity or magnetic force variation mode, for each unit, which becomes one of the problems to be solved during the operation of the unit.

[0016] In view of the above, the object of the present invention is to provide a sputtering apparatus, a control method thereof, and a control device for the sputtering apparatus that can improve deposition homogeneity and apparatus operating rate.

[0017] Solution for solving the problem

[0018] One aspect of the sputtering apparatus of the present invention includes:

[0019] One or more targets are arranged facing the substrate and are made of film-forming material;

[0020] One or more magnet units are disposed on the back side of the target;

[0021] A control device having an optimal solution calculation unit that calculates an optimal solution for at least one of the set conditions based on input information including at least set conditions and measured values ​​of the film quality of the film-forming material on the substrate formed by the sputtering apparatus, the set conditions including at least one of the position of each of the magnet units, the movement mode of each of the magnet units, and the current flowing into or the current variation mode of the electromagnet constituting each of the magnet units; and

[0022] An adjustment unit is capable of individually adjusting the setting conditions of the magnet unit based on the optimal solution.

[0023] The sputtering device can be connected to a device for measuring the film quality of the film-forming material on the substrate, automatically acquiring the measured value, calculating the optimal solution, and adjusting the set conditions based on the optimal solution.

[0024] The target can be a flat target used for a flat cathode or a cylindrical target used for a rotating cathode. One target can correspond to one or more magnet units.

[0025] The position of the magnet unit indicates the relative positional relationship between the target and the magnet unit. Specifically, for a flat target, it represents the relative position of the magnet unit with respect to any reference plane parallel to the target. For a cylindrical target, it represents the relative position of the magnet unit with respect to the target's rotational axis.

[0026] The movement mode of the magnet unit refers to the way in which the position of the magnet unit changes over time while a film is formed on a substrate, by changing the position of the magnet unit.

[0027] The inflow current of the magnet unit refers to the current flowing in the coil in order to generate magnetic force when some or all of the magnets constituting the magnet unit are electromagnets.

[0028] The current variation mode of the magnet unit refers to the way in which the current flowing into the magnet unit changes over time while a film is formed on a substrate, by varying the current flowing into the magnet unit.

[0029] The film comprises one or more physical property values ​​representing the characteristics of the film formed by the sputtering apparatus. These physical property values, for example, include film thickness, thin film resistance, light transmittance, film stress, refractive index, etching characteristics, and film density.

[0030] The measured values ​​of the film quality of the film-forming material on the substrate include measurement data related to the film quality of the film-forming material at multiple measurement points on the substrate.

[0031] The input information may also include information related to one or more factors that can affect the distribution of the film. These factors include, for example, the type of film-forming material, the surface shape of the target, the voltage applied to the target, the discharge time, the type of sputtering gas, and the pressure during film formation.

[0032] The optimal solution calculation unit is configured to calculate, based on the input information, an optimal solution for at least one of the following: the position of each magnet unit, the movement pattern of each magnet unit, the inflow current of the electromagnet constituting each magnet unit, and the variation pattern of the inflow current of the electromagnet constituting each magnet unit.

[0033] As a method for calculating the optimal solution, it is possible to utilize, for example, a machine learning machine that has learned actual film formation results, simulation based on a mathematical model, or a reduced-order model obtained by reconstructing the computationally burdensome parts of the mathematical model using a machine learning machine.

[0034] In addition, the machine learning machine, the mathematical model, and the reduced-order model that directly output the optimal solution can be used, or the machine learning machine, the mathematical model, and the reduced-order model that predict the membrane distribution for any candidate output of the optimal solution can be combined with a mathematical optimization program that searches for candidates of the optimal solution that predicts the optimal membrane distribution.

[0035] One aspect of the present invention is a control method for a sputtering apparatus, the sputtering apparatus having one or more targets disposed facing a substrate and made of a film-forming material, and one or more magnet units disposed on the back side of the targets.

[0036] In the control method of the sputtering device,

[0037] Based on input information including at least setting conditions and measured values ​​of the film quality of the film-forming material on the substrate formed by the sputtering apparatus, an optimal solution is calculated for the setting conditions of at least one of the magnet units, the setting conditions including at least one of the position of each magnet unit, the movement mode of each magnet unit, and the current flowing into or the current variation mode of the electromagnet constituting each magnet unit.

[0038] Based on the optimal solution, the setting conditions of the magnet units are individually adjusted.

[0039] One aspect of the sputtering apparatus of the present invention is a control device for controlling a sputtering apparatus, the sputtering apparatus having one or more targets disposed facing a substrate and made of a film-forming material, and one or more magnet units disposed on the back side of the targets, wherein...

[0040] The control device for the sputtering apparatus has an optimal solution calculation unit that calculates an optimal solution for the setting conditions of at least one of the magnet units based on input information including at least setting conditions and a measurement value of the film quality of the film-forming material on the substrate formed by the sputtering apparatus. The setting conditions include at least one of the position of each magnet unit, the movement mode of each magnet unit, and the current flowing into or the current variation mode of the electromagnet constituting each magnet unit.

[0041] Invention Effects

[0042] According to the present invention, it is possible to improve deposition homogeneity and device operating rate. Attached Figure Description

[0043] Figure 1 This is a schematic cross-sectional view of a sputtering apparatus according to one embodiment of the present invention.

[0044] Figure 2 An enlarged view illustrating a structural example of the magnet unit in the above-described sputtering apparatus.

[0045] Figure 3 This is a schematic diagram illustrating the relationship between the relative position of the magnet unit and the target and the homogeneity of the film.

[0046] Figure 4 A schematic diagram illustrating how adjusting the oscillation of a magnet unit suppresses the temporal variation of the film distribution.

[0047] Figure 5 This is a front view showing the arrangement of the magnet units.

[0048] Figure 6 This is a schematic structural diagram of the adjustment unit in the above-mentioned sputtering device.

[0049] Figure 7 This is a block diagram illustrating the structure of the control device in the aforementioned sputtering apparatus.

[0050] Figure 8 To indicate in Figure 7 A flowchart of an example of the processing steps performed in the control device shown.

[0051] Figure 9 A schematic cross-sectional view of a sputtering apparatus according to another embodiment of the present invention.

[0052] Figure 10 for Figure 9 A schematic diagram of the rotating cathode in the sputtering apparatus shown.

[0053] Figure 11 A schematic diagram illustrating how adjusting the oscillation of a magnet unit suppresses the temporal variation of the film distribution.

[0054] Figure 12 This is a schematic diagram illustrating the relationship between the swing position of the magnet unit relative to the target and the homogeneity of the film.

[0055] Figure 13 To indicate Figure 9 A block diagram of the structure of the control device in the sputtering apparatus shown.

[0056] Figure 14 To indicate in Figure 13 A flowchart of an example of the processing steps performed in the control device shown.

[0057] Figure 15 To explain Figure 1 A schematic diagram of the main parts of a modified example of the structure of the sputtering device shown. Detailed Implementation

[0058] Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings.

[0059] <First Implementation>

[0060] [Basic Structure of a Sputtering Device]

[0061] Figure 1 This is a schematic cross-sectional view of a sputtering apparatus 100 according to one embodiment of the present invention. Figure 1 In the diagram, the X-axis, Y-axis, and Z-axis represent the directions of three mutually orthogonal axes, with the Z-axis corresponding to the vertical direction (height direction).

[0062] The sputtering apparatus 100 is a magnetron sputtering apparatus, comprising: a vacuum chamber 1, a substrate support 2, a target 3, a backplate 4, multiple magnet units 5, and a protective plate 6. The sputtering apparatus 100 can be a monolithic vertical sputtering apparatus or an in-line vertical sputtering apparatus. Furthermore, when the substrate size is within a specified range, the sputtering apparatus 100 can also be a horizontal sputtering apparatus.

[0063] Vacuum chamber 1 is connected to vacuum pump 7, configured to exhaust internal air to or maintain a specified reduced pressure environment. Substrate support 2 is disposed inside vacuum chamber 1, supporting substrate W in a vertical orientation. Vacuum chamber 1 and substrate support 2 are typically connected to ground potential. Substrate W is, for example, a rectangular glass substrate with a width of 1850 mm or more and a height of 1500 mm or more.

[0064] Although not shown, the vacuum chamber 1 is provided with an inlet and an outlet for the substrate support 2. The inlet and outlet can be interchangeable or separate. The inlet and outlet are configured to be openable and closable via a gate valve or the like (not shown).

[0065] The target 3 is made of a film-forming material used to form a film on the substrate W. Typical examples of film-forming materials include metals, alloys, metal oxides, metal nitrides, and synthetic resins. In this embodiment, a conductive metal or alloy target is used.

[0066] The target 3 can be an ingot target or a sintered body target. The number, size, and arrangement of the targets 3 are not particularly limited. In this embodiment, the target 3 is made of a single rectangular plate with an area larger than that of the substrate W. It is arranged in the vacuum cavity 1 and faces the substrate W in the X-axis direction at a predetermined distance (TS distance).

[0067] The backplate 4 is a metal plate that supports the back of the target 3 and is fixed to the vacuum chamber 1 via an insulating member 11. The backplate 4 is typically bonded to the target 3 via solder such as indium. The backplate 4 is connected to a power supply 8, which is located outside the vacuum chamber 1 and has an RF power supply or a DC power supply.

[0068] Multiple magnet units 5 are arranged facing the back side (non-sputtering surface) of the target 3 across the back plate 4. The multiple magnet units 5 constitute a magnetic circuit that forms a magnetic field on the surface (sputtering surface) of the target 3.

[0069] Figure 2 This is an enlarged view of the magnet unit 5. The magnet unit 5 includes a first magnet 51, a second magnet 52, and a yoke 53 supporting the first magnet 51 and the second magnet 52. The ends of the first magnet 51 and the second magnet 52 on the target 3 side are magnetized to have opposite magnetic poles. The shape and arrangement of the first magnet 51 and the second magnet 52 are not particularly limited. In this embodiment, the first magnet 51 is formed as a straight line extending in the Z-axis direction, and the second magnet 52 is formed as a rectangular ring surrounding the first magnet 51. The shape and number of the first and second magnets 51 and 52 constituting the magnetic circuit are not limited to this example and can be arbitrarily set.

[0070] A protective plate 6 is positioned between the substrate support 2 and the target 3 to prevent sputtered material (film-forming material) from the target 3 from adhering to the inner surface of the sidewall of the vacuum chamber 1 and the outer peripheral area of ​​the substrate W (the periphery of the substrate support 2), and to divide the plasma space P between the target 3 and the substrate support 2 into a plasma space for plasma generation. A gas inlet line 9 is installed in the vacuum chamber 1 to introduce sputtered gases such as Ar (argon) from the gas source 9s into the plasma space P.

[0071] When a film is deposited on the substrate W using the sputtering apparatus 100, sputtering gas is introduced into the plasma space P from the gas introduction line 9, and RF or DC power is supplied to the target 3 via the power supply 4 through the backplate 4, thereby causing magnetron discharge in the plasma space P. Multiple magnet units 5 disposed on the back of the target 3 form a magnetic field orthogonal to the electric field on the surface of the target 3, confining electrons in the plasma to the vicinity of the target 3 surface. Thus, even a small sputtering power increases the electron density and the amount of ion impact on the target.

[0072] In magnetron sputtering apparatuses, the higher the horizontal magnetic flux density (magnetic flux density orthogonal to the electric field) on the target surface (sputtering surface), the higher the plasma erosion rate of the target surface. Consequently, more film-forming material is sputtered from the target surface, enabling high-speed film deposition onto the substrate surface. Typically, there is a tendency that on the surface of the target 3, regions with higher magnetic flux density in the horizontal magnetic field B of each magnet unit 5 exhibit relatively higher deposition rates onto the surface region of the substrate W opposite to that region compared to other surface regions. Therefore, to ensure uniform film distribution on the substrate W, it is necessary to strictly control the magnetic flux density distribution of the horizontal magnetic field B on the surface of the target 3.

[0073] [Explanation that the film distribution can be adjusted by adjusting the position of the magnet unit along the X-axis]

[0074] For example, with the position of the magnet element fixed in the X-axis direction, as the target surface erodes, the distance from the target surface to the magnet element gradually decreases, resulting in a higher horizontal magnetic flux density on the target surface. Furthermore, as... Figure 3 As shown in (A) and (B), within the target surface, the region with higher horizontal magnetic flux density erodes 3e faster, thus the difference in horizontal magnetic flux density on the surface of target 3 becomes more pronounced over time. Therefore, there is a tendency for the deposition homogeneity on substrate W to deteriorate as the number of processed sheets increases.

[0075] Therefore, as Figure 3 As shown in (C), if the magnet unit 5 constituting the magnetic circuit is moved away from the surface of the target 3 in order to reduce the horizontal magnetic flux density in the surface region of the target 3 where the erosion 3e proceeds at a faster rate, the accelerated increase of the horizontal magnetic flux density in that region will be suppressed, and the amount of deposition can be homogenized.

[0076] Furthermore, when some or all of the first magnet 51 and the second magnet 52 constituting the magnetic circuit are electromagnets, the horizontal magnetic flux density of the surface area of ​​the target 3 can be adjusted not only by adjusting the position of the magnet unit 5 in the X-axis direction, but also by adjusting the magnitude and direction of the current flowing into the coils constituting the first magnet 51 and the second magnet 52, thereby achieving homogenization of the deposition amount.

[0077] [Explanation that the film distribution can be adjusted by oscillating the magnet unit in the Y-axis direction]

[0078] When erosion is carried out in a limited area of ​​target 3, the utilization efficiency of the target is low. Therefore, it is known that erosion can be generated over a larger area by swinging the magnet unit 5 in the Y-axis direction (see Patent Document 1).

[0079] Typically, the erosion of a single magnet unit 5, which oscillates at a constant speed along the Y-axis, is fastest at the center of the oscillation; therefore, the surface shape of the target is bowl-shaped. Figure 4 (A) and (B) show the changes in the surface shape of target 3 and the temporal changes in the position of magnet unit 5 relative to target 3 along the Y-axis, respectively, after a specified time elapsed from the start of sputtering of target 3. In the central portion of the bowl-shaped area on the surface of target 3, the distance between the surface of target 3 and magnet unit 5 approaches rapidly, therefore... Figure 4 As shown in (B), the difference in the rate of erosion between the central part 3e-center and the two lateral parts 3e-edge becomes more pronounced over time.

[0080] Therefore, as the oscillation continues at a constant speed, the velocity balance changes between the central part 3e-the center and the two lateral parts 3e-the edges of the erosion. As erosion proceeds, the difference in their velocities becomes more significant, resulting in changes in the film distribution and a decrease in target utilization efficiency.

[0081] Therefore, as Figure 4 As shown in (C), in order to maintain a balance between the erosion speed of the central portion 3e- and the erosion speed of the two side portions 3e-, and to make the magnet unit 5 stay around the erosion side portion 3e-edge area for a longer time, the swing distance of the magnet unit 5 in the Y-axis direction is increased and / or the moving speed at both ends of the swing is slowed down, thereby suppressing changes in film distribution and maintaining a homogeneous film. Specifically, the time that the magnet unit 5 stays near the swing end can be increased (see reference). Figure 4 Example 1 of countermeasure (C): Set the time for magnet unit 5 to remain at the oscillating end (refer to...). Figure 4 Countermeasure Example 2 of (C): Increase the swing amplitude of magnet unit 5 (refer to...) Figure 4 (C) The method of countermeasures (Example 3), or any combination of these countermeasures (Examples 1-3).

[0082] Furthermore, when some or all of the first magnet 51 and the second magnet 52 constituting the magnetic circuit are electromagnets, adjusting the current flowing in the coils constituting the first magnet 51 and the second magnet 52 (hereinafter, the current-flow variation mode) that varies according to the position of the magnet unit 5 during its swing has the same effect as adjusting the movement mode of the magnet unit 5 in the Y-axis direction. Specifically, by increasing the current when the magnet unit 5 is near the end of the swing and decreasing the current when it is near the center of the swing, changes in the film distribution can be suppressed.

[0083] As shown above, setting the magnet unit 5 such that the position of the magnet unit 5 in the X-axis direction, the movement mode in the Y-axis direction, and the current flow or current flow variation mode change over time are important for maintaining the homogeneity of the film.

[0084] However, the rate of erosion is influenced by various factors, including pressure, applied voltage, sputtering gas flow rate, target material, and target quality, making accurate prediction of erosion difficult. Furthermore, erosion occurs faster in regions with higher horizontal magnetic flux density, thus amplifying the difference between actual and predicted erosion over time.

[0085] Therefore, it is difficult to pre-set the optimal X-axis position, Y-axis movement pattern, and current inflow or current variation pattern of the magnet unit as a function of time. In practice, it is necessary to periodically perform the following series of operations: confirm the deposition state of the substrate, stop the device, and adjust the X-axis position, Y-axis movement pattern, and current inflow or current variation pattern of the magnet unit. This operation contributes to the decrease in device operating rate, and the larger the substrate, the more pronounced this problem becomes.

[0086] Therefore, in this embodiment, in order to improve the homogeneity of deposition and the operating rate of the apparatus, the sputtering apparatus 100 is configured as follows.

[0087] [Details of the sputtering device]

[0088] (Magnetic unit)

[0089] Figure 5 This is a front view taken from the X-axis direction, showing the arrangement of multiple magnet units 5. In the example shown in this figure, each magnet unit 5 is composed of a first strip block 5a and a pair of second blocks 5b arranged at both ends of the first strip block 5a in the height direction (Z-axis direction). Each of these blocks 5a and 5b is respectively equipped with... Figure 2The first and second magnets 51 and 52 are shown. Furthermore, multiple magnet units 5, each consisting of a first block 5a and a pair of second blocks 5b, are arranged laterally (in the Y-axis direction) (9 groups in the illustrated example). Therefore, the magnetic circuit arranged on the back of the target 3 is divided into a total of 27 points.

[0090] In each magnet unit 5, the length of the first block 5a along the Z-axis is longer than that of the second block 5b, but this is not a limitation; blocks 5a and 5b can also be of equal length. The number of blocks constituting each magnet unit 5 is not limited to 3; it can be 2 or more. The number of arrangements of magnet units 5 is also not limited to 9; it can be fewer or more. That is to say, the number of divisions of the magnetic circuit formed by multiple magnet units 5, the size of the divided magnetic circuit, etc., are not limited to the example shown in the figure, and can be arbitrarily set according to the size of the target 3 or substrate W, the position on the substrate W where the deposition amount should be adjusted, the in-plane distribution of the deposition amount on the target substrate W, etc.

[0091] The sputtering apparatus 100 also includes: an adjustment unit 10, which is capable of individually adjusting the relative distance between the first and second blocks 5a and 5b of each magnet unit 5 and the target 3; and a control device 20, which controls the adjustment unit 10.

[0092] (Adjustment Unit)

[0093] Figure 6 This is a top view showing the schematic structure of the adjustment unit 10, viewed from the Z-axis direction. The adjustment unit 10 has multiple drive units 11 disposed outside the vacuum chamber 1 and corresponding to the first and second blocks 5a and 5b of each magnet unit 5. Each drive unit 11 is, for example, a drive cylinder or a drive motor, which has drive shafts 11a and 11b having one end connected to the first and second blocks 5a and 5b. The drive shaft 11a moves the first and second blocks 5a and 5b toward or away from the target 3 by extending and retracting in the X-axis direction. The drive shaft 11b moves the first and second blocks 5a and 5b in a direction parallel to the target 3 by extending and retracting in the Y-axis direction.

[0094] Furthermore, when some or all of the magnets constituting each magnet unit 5 are electromagnets, the adjustment unit 10 may also have a device for adjusting the current flowing in each electromagnet. The device for adjusting the current flowing in the electromagnet may be adjusted to always have a fixed current flowing through it, or it may be adjusted to change the inflowing current in conjunction with the swing of the magnet unit 5 in the Y-axis direction.

[0095] The adjustment unit 10 can be adjusted manually by the operator to adjust the position of each magnet unit 5 in the X-axis direction, the movement mode in the Y-axis direction, and the current or current variation mode, or it can be adjusted automatically based on the control command from the control device 20.

[0096] (Control device)

[0097] The control device 20 is composed of a computer including a CPU (Central Processing Unit), internal memory, input / output interfaces, etc. In this embodiment, the control device 20 controls the operation of the sputtering apparatus 100 as a whole, including the adjustment unit 10, vacuum pump 7, power supply 8, and gas guide line 9.

[0098] Figure 7 This is a block diagram illustrating the structure of the part of the control device 20 that relates to the present invention in its function. The control device 20 includes an input unit 21, an optimal solution calculation unit 22, and an output unit 23.

[0099] The input unit 21 has the function of obtaining various film formation conditions during film formation on each substrate and measuring the film quality on each substrate from the sputtering apparatus 100. In addition, when the film quality on each substrate is measured using a measuring device different from the sputtering apparatus 100, the control device 20 is connected to the measuring device, and the input unit 21 also has the function of obtaining the measuring value of the film quality on each substrate.

[0100] In addition to including at least one of the following as setting conditions for each magnet unit 5: position in the X-axis direction, movement mode in the Y-axis direction, and current inflow or current inflow variation mode, the various film formation conditions during substrate film formation may also include the type of film formation material constituting the target 3, the amount of target 3 consumed (surface shape of target 3), the applied voltage to the target 3 (input voltage from power supply 8), the inflow rate of sputtering gas, and the pressure inside the chamber.

[0101] The film quality measurements on each substrate are the film quality measurements taken at multiple specific locations on the substrate W. The arrangement of these measurement points is not particularly limited, but from the viewpoint of managing the distribution of film quality on each substrate, it is preferable to arrange locations on the substrate W that cover a large area and contain either extremely large or extremely small film quality within the surface of the substrate W. These measurement points can be predetermined before film deposition begins or arbitrarily determined after film deposition.

[0102] The optimal solution calculation unit 22 calculates the optimal solution (or optimal value) for the setting conditions based on the setting conditions and the input information including at least the measured value of the film quality of the film-forming material on the substrate W formed by the sputtering apparatus 100.

[0103] The optimal solution calculation unit 22 has the following functions: based on the various input information obtained by the input unit 21, it calculates the optimal X-axis position, Y-axis movement pattern, and current inflow or current inflow variation pattern of each magnet unit 5 that can achieve the homogeneity of the film. Details of the optimal solution calculation unit 22 will be explained below.

[0104] The optimal solution calculation unit 22 in this embodiment is composed of a prediction unit 221, a correction unit 222, and an optimization unit 223.

[0105] The prediction unit 221 calculates a predicted value for the homogeneity of the film quality under the set conditions for any of the aforementioned magnet units. The prediction unit 221 is a function that takes various film formation conditions as independent variables and returns a predicted value for the film quality assuming film formation under those conditions. The method for calculating the predicted value of the film quality is not particularly limited; in this embodiment, a machine learning machine that has previously learned the relationship between various film formation conditions and the film quality is used.

[0106] The algorithm of the machine learning machine is not particularly limited and can be applied to any one of the following: multiple linear regression, neural networks, decision trees, support vector machines, or an ensemble learning model that combines multiple algorithms.

[0107] The independent variables of the prediction unit 221 must include the position of each magnet unit 5 in the X-axis direction, the movement pattern in the Y-axis direction, and the current inflow or the variation pattern of the current inflow. Furthermore, for example, by adding film formation conditions that affect the film distribution, such as the type of film-forming material, the surface shape of the target, the voltage applied to the target, the discharge time, the type of sputtering gas, and the pressure during film formation, a more accurate machine learning machine can be constructed.

[0108] The predicted film quality value returned by the prediction unit 221 is the predicted film quality value at all measurement points on the actual substrate W. The reason for using the same measurement points as the actual substrate W is that it is necessary to compare them with the actual film quality measurement values ​​obtained by the input unit 21.

[0109] By inputting the actual film formation conditions into the independent variables of the prediction unit 221, the predicted value of the actual film quality can be calculated. However, the film quality is affected by a variety of factors, such as the position of each magnet unit 5 in the X-axis direction, the movement pattern in the Y-axis direction and the current flow or current flow variation pattern, pressure, applied voltage, sputtering gas flow rate, the material constituting the target, and the quality difference of the target. It is difficult to measure all of these factors. Therefore, the predicted value of the actual film quality rarely matches the measured value.

[0110] Therefore, in order to ensure that the predicted value of the actual film quality matches the measured value, the predicted value of the film quality needs to be corrected. The correction unit 222 compares the predicted value of the actual film quality with the measured value, calculates correction parameters, and corrects the predicted value of the film quality. If the prediction accuracy of the prediction unit 221 is high enough, the impact of the correction is smaller, so the correction method of the correction unit 222 can also be a simple addition or multiplication.

[0111] The correction unit 222 corrects the predicted value of the film quality calculated by the prediction unit 221, thereby enabling the prediction of film quality under any film formation conditions. Hereinafter, the predicted value of the film quality corrected by the correction unit 222 will be referred to as the corrected predicted value of the film quality.

[0112] The optimization unit 223 searches for the optimal film formation conditions based on the corrected predicted values ​​of the film quality. In this embodiment, a mathematical optimization algorithm is used to search for the position in the X-axis direction, the movement pattern in the Y-axis direction, and the current inflow or current variation pattern of each magnet unit 5 that minimizes the statistical measure representing the homogeneity of the corrected predicted values ​​of the film quality. The statistical measure representing the homogeneity of the corrected predicted values ​​of the film quality uses (Max-Min) / (Max+Min), a variation coefficient, which is commonly used as an indicator of homogeneity in the sputtering field. As the mathematical optimization algorithm, methods such as gradient descent, grid search, brute force, and Bayesian optimization can be used.

[0113] According to this embodiment, regarding the actual most recent film formation, the following information (optimal film formation conditions) can be obtained: how to set the position of each magnet unit 5 in the X-axis direction, the movement mode in the Y-axis direction, and the current inflow or current inflow variation mode to obtain optimal film homogeneity. The erosion of the target 3 occurs over a period ranging from several days to several weeks; therefore, if the time from implementing the most recent film formation to completing the calculation of the optimal film formation conditions is sufficiently short relative to the rate of erosion, the optimal film formation conditions can be considered valid at the time the calculation is completed.

[0114] The output unit 23 sends the position in the X-axis direction, the movement mode in the Y-axis direction, and the current inflow or current inflow variation mode of each magnet unit 5 calculated by the optimal solution calculation unit 22 to the adjustment unit 10, and performs the adjustment.

[0115] Based on the actual film formation data, the control device 20 automatically adjusts the position of each magnet unit 5 in the X-axis direction, the movement mode in the Y-axis direction, and the current flow or current flow variation mode before the homogeneity of the film is significantly compromised, thereby maintaining the homogeneity of the film.

[0116] Furthermore, by referring to the actual film formation results when calculating the optimal solution, it can not only cope with changes over time, but also automatically absorb individual differences existing among multiple devices, and make optimal adjustments to each device.

[0117] Figure 8 This is a flowchart illustrating an example of the processing steps performed in the control device 20 of this embodiment.

[0118] The input unit 21 acquires input information (step 101). The input information includes various film formation conditions during film formation on each substrate and the measured values ​​of the film quality formed on each substrate.

[0119] Next, the optimal solution calculation unit 22 (prediction unit 221) calculates the predicted value of the homogeneity of the film quality of the film-forming material on the substrate W based on the input information obtained by the input unit 21, and determines whether the homogeneity of the film quality is within the target range based on the calculated predicted value (steps 102, 103).

[0120] Next, if the homogeneity of the membrane is not within the target range, the optimal solution calculation unit 22 (correction unit 222) compares the measured value of the membrane obtained by the input unit 21 with the predicted value calculated by the prediction unit 221, and determines the correction coefficient used to correct the predicted value (steps 104, 105).

[0121] Next, the optimal solution calculation unit 22 (optimization unit 223) searches for the optimal solution that satisfies the homogeneity of the film by setting conditions such as the position of each magnet unit 5 that is optimal for the corrected film quality prediction value (step 106).

[0122] Next, based on the optimal solution calculated by the optimal solution calculation unit 22, the output unit 23 calculates the adjustment amount of each current magnet unit 5 to the aforementioned optimal solution and outputs it to a display unit (not shown) (step 107). Alternatively, based on the calculated optimal solution of each magnet unit 5, the output unit 23 generates a control command and outputs the control command to the adjustment unit 10 to set the setting conditions of each magnet unit 5 to the aforementioned optimal solution.

[0123] As described above, according to this embodiment, based on input information such as the setting conditions of each magnet unit 5 and actual measured values, it is possible to determine whether the homogeneity of the film quality of the material formed on the substrate W is within a specified target range. Furthermore, based on this information, the optimal solution calculation unit 22 can calculate the optimal solution for the setting conditions of each magnet unit 5 regarding the homogeneity of the film quality.

[0124] In existing sputtering apparatus (comparative example), the film homogeneity on the substrate W to which the film is deposited is evaluated periodically. If the evaluation result is within the target range (below the management value), processing continues directly. If the evaluation result is outside the target range (above the management value), the apparatus is stopped, and the position of each magnet unit 5 is adjusted manually. Therefore, the apparatus needs to be stopped every time the magnet unit 5 is adjusted, resulting in a decrease in apparatus operating rate. Furthermore, the adjustment of the position of each magnet unit 5 requires a high level of skill, thus limiting the improvement in apparatus operating rate. Consequently, in order to suppress the decrease in apparatus operating rate, the management value cannot be strictly set, making it difficult to obtain stable film homogeneity within or between batches.

[0125] In response to this, according to this embodiment, the position of each magnet unit 5 can be automatically adjusted without stopping the operation of the sputtering apparatus 100, thus significantly improving the apparatus operating rate. Furthermore, since homogeneity is evaluated based on the calculated values ​​of the film during the sputtering process, the position of the magnet unit 5 can be adjusted before the homogeneity of the film is significantly compromised. Moreover, the control values ​​can be set more strictly than in the comparative example, thus suppressing homogeneity deviations within or between batches, thereby enabling the continuous and stable formation of homogeneous films.

[0126] <Second Implementation>

[0127] Next, the second embodiment of the present invention will be described. Figure 9 This is a schematic cross-sectional view illustrating a sputtering apparatus 200 according to another embodiment of the present invention. Figure 9 In the diagram, the X-axis, Y-axis, and Z-axis represent the directions of three mutually orthogonal axes, with the Z-axis corresponding to the vertical direction (height direction).

[0128] The sputtering apparatus 200 includes a vacuum chamber 201, a substrate support 202, multiple rotating cathodes RC, and a protective plate 206. The multiple rotating cathodes RC are arranged at equal intervals along the Y-axis. Each rotating cathode RC has: a cylindrical target 203, a cylindrical liner 204 supporting the inner circumferential surface of the target 203, and a magnet unit 205 disposed inside the target 203.

[0129] Vacuum chamber 201 is connected to vacuum pump 207, configured to exhaust internal air to or maintain a specified reduced pressure environment. Substrate support 202 is disposed inside vacuum chamber 201, supporting substrate W in a vertical orientation. Vacuum chamber 201 and substrate support 202 are typically connected to ground potential. Substrate W is, for example, a rectangular glass substrate with a width of 1850 mm or more and a height of 1500 mm or more.

[0130] Each target 203 is configured to rotate about an axis parallel to the Z-axis (the circumferential direction of the target 203). The target 203 is made of the same film-forming material that constitutes the substrate W. Typical examples of film-forming materials include metals, alloys, metal oxides, metal nitrides, and synthetic resins. In this embodiment, a conductive metal or alloy target is used.

[0131] Each liner 204 is a metal plate supporting the back of the target 203 and is connected to a power supply with an RF power supply or DC power supply (not shown) located outside the vacuum chamber 201.

[0132] Multiple magnet units 205 are arranged along the axial direction of each target 203 on the inner side of each target 203. This forms a magnetic circuit that creates a magnetic field on the surface (sputtering surface) of the target 203 facing the substrate W. (See reference...) Figure 2 As described above, each magnet unit 205 has a first magnet 51, a second magnet 52, and a yoke 53 supporting the first magnet 51 and the second magnet 52.

[0133] A protective plate 206 is disposed around the rotating cathode RC to prevent sputtered material (film-forming material) from the target 3 from adhering to the inner surface of the sidewall of the vacuum chamber 201 and the outer peripheral area of ​​the substrate W (the periphery of the substrate support 2), and to divide the plasma space P for plasma generation between the target 203 and the substrate support 202. A gas introduction line 209 is installed in the vacuum chamber 201 to introduce sputtered gases such as Ar (argon) from the gas source 209s into the plasma space P.

[0134] When a film is formed on the substrate W by the sputtering apparatus 200, sputtering gas is introduced into the plasma space P from the gas introduction line 209, causing each target 3 to rotate around the axis at a fixed speed, and RF power or DC power is applied to the target 203 from the power supply via the liner 204, thereby generating a magnetron discharge in the plasma space P.

[0135] In the sputtering apparatus 200, by rotating the target 203 around its axis, erosion is carried out evenly in the circumferential direction of the target 203. Therefore, the utilization efficiency of the target 203 can be improved.

[0136] In this embodiment, such as Figure 10 As shown, each rotating cathode RC has a drive unit 211 that enables each magnet unit 205 to move in the radial direction of the target 203 and to oscillate in the circumferential direction of the target 203. By configuring each magnet unit 205 to move in the radial direction of the target 203, the sputtering rate of the target 203 can be controlled. Furthermore, by configuring each magnet unit 205 to oscillate in the circumferential direction of the target 203, the shape of the film formed can be manipulated to some extent. The drive unit 211 is configured to adjust the oscillation amplitude and oscillation speed of the magnet unit 205.

[0137] [Explanation of how the film distribution can be adjusted by adjusting the radius direction of the magnet unit]

[0138] Typically, the erosion rates of multiple rotating cylindrical cathodes (rotating cathodes) arranged in a row are preferably equal. However, sometimes, due to factors such as the distance between them and elements that affect electron movement (anode, other rotating cathodes), or slight differences in the quality of the target, equal erosion rates cannot be obtained. In addition, sometimes different erosion rates are intentionally set in order to obtain the desired film distribution.

[0139] As any target erodes, its diameter shrinks and it gets closer to the magnet unit, thus accelerating the erosion rate. However, when there are differences in erosion rates among multiple rotating cathodes, these differences become significant over time, resulting in changes in the film distribution.

[0140] Therefore, in order to maintain a balanced erosion rate of the target, the position of the magnetic unit in the radial direction needs to be adjusted as erosion progresses.

[0141] Furthermore, when some or all of the magnets used in the magnet unit are electromagnets, the same effect can be achieved by adjusting the current flowing into the magnet.

[0142] That is, the erosion rate of the target surface can be adjusted based on the magnitude and direction of the current flowing in the coil of the electromagnet.

[0143] [Explanation of how the film distribution can be adjusted by adjusting the circumferential oscillation of the magnet unit]

[0144] The film thickness distribution on a substrate formed by a cylindrical target is affected by the circumferential position of the magnet unit. Typically, when the magnet unit is positioned facing the substrate, it exhibits a symmetrical bell-shaped distribution. However, when the magnet unit is rotated from its position facing the substrate, it exhibits an asymmetrical bell-shaped distribution with the peak position shifting in the rotational direction. This is because the position of the released target particles varies depending on the position of the magnet unit (see reference...). Figure 11 (A) and (B)).

[0145] It is known that there is a technique that utilizes this property to manipulate the film thickness distribution obtained by oscillating a magnetic unit in a circumferential direction during film formation. Figure 12 (A)).

[0146] As the target erosion progresses, the target diameter decreases, and consequently, the film thickness distribution changes. Typically, due to the effect of moving the particle release site away from the substrate, the film thickness distribution changes to a smoother bell-shaped pattern. Figure 12(B)). As a countermeasure to such changes, adjusting the circumferential oscillation of the magnet unit is effective. Figure 12 (C)).

[0147] As etching proceeds, by reducing the swing amplitude of the magnet unit and adjusting the swing speed to keep the magnet unit in the position facing the substrate for a longer period of time, the film thickness distribution can be maintained.

[0148] Furthermore, when some or all of the magnets used in the magnet unit are electromagnets, the same effect can be achieved by adjusting the way the current flows in corresponding to the swing position.

[0149] The radial position, circumferential oscillation, and current inflow or current variation pattern of the aforementioned magnet unit are concepts corresponding to the X-axis position, Y-axis movement pattern, and current inflow or current variation pattern of each magnet unit 5 shown in the first embodiment. Therefore, it can be understood that if the description of the first embodiment is replaced with the above explanation, the first embodiment can also be applied to a rotating cathode. Similarly, this embodiment can also be applied to a flat cathode (first embodiment).

[0150] [Control Department]

[0151] The sputtering apparatus 200 of this embodiment also includes a control device 220 for controlling the position of each magnet unit 5, etc. Figure 13 This is a block diagram illustrating the structure of the portion of the control device 220 that is relevant to the present invention. Similar to the first embodiment, the control device 220 includes an input unit 21, an optimal solution calculation unit 22, and an output unit 23.

[0152] In this embodiment, the structure of the optimal solution calculation unit 22 differs from that in the first embodiment described above. The optimal solution calculation unit 22 in this embodiment comprises a prediction unit 221, a state estimation unit 224, and an optimization unit 223. Furthermore, the function of the prediction unit 221 also differs from that in the first embodiment.

[0153] The prediction unit 221 in this embodiment is a function that takes the film formation conditions and the device state (as a hidden parameter) as independent variables, and returns a predicted value of the film quality assuming film formation is performed under these conditions and device state. The method for calculating the predicted film quality is based on a mathematical model that reproduces sputtering-related physical phenomena in a program.

[0154] The device state as a hidden parameter refers to physical quantities that are known to affect film formation, such as the erosion status of the target, but whose values ​​are unknown due to the lack of measuring equipment, or completely unknown factors that affect film formation, which are modeled as vectors using white noise.

[0155] If film formation conditions and appropriate device states are input to the prediction unit 221, the film distribution can be predicted for any film formation conditions. Typically, the device states, which are hidden parameters, are unknown; therefore, estimating the device states is essential for using the prediction unit 221.

[0156] Therefore, the state estimation unit 224 is responsible for estimating the state of the apparatus using the actual film formation results.

[0157] The state estimation unit 224 calculates the estimated state of the device using the maximum likelihood estimation method and the MAP estimation method based on the actual film formation conditions and results. The calculation can also employ various mathematical optimization algorithms such as gradient descent and Markov chain Monte Carlo methods.

[0158] The first embodiment mechanically fills the gap between the predicted and measured values ​​of the membrane quality. In contrast, the second embodiment theoretically explains why the error occurred by estimating the device state. Therefore, it has the advantage of high prediction reliability, and the ability to maintain membrane homogeneity even if actual film formation results are not obtained for a long time by predicting the progression of the device state during this period.

[0159] The correction unit 221 in the first embodiment and the state estimation unit 224 in the second embodiment are both introduced with the aim of improving prediction accuracy. Therefore, the state estimation unit 224 is considered as a form of the correction unit 221.

[0160] Figure 14 This is a flowchart illustrating an example of the processing steps performed in the control device 220 of this embodiment.

[0161] Input unit 21 acquires the film formation conditions of sputtering apparatus 200 and input information including measured values ​​(step 201). Next, optimal solution calculation unit 22 (prediction unit 221) calculates a predicted value of the homogeneity of the film quality of the film formation material on substrate W based on the input information acquired by input unit 21, and determines whether the homogeneity of the film quality is within the target range based on the calculated predicted value (steps 202, 203).

[0162] Next, if the homogeneity of the film is not within the target range, the optimal solution calculation unit 22 (state estimation unit 224) calculates (estimates) the film formation condition with the highest likelihood of the current device state based on the input information obtained by the input unit 21 (step 204).

[0163] Next, the optimal solution calculation unit 22 (optimization unit 223) searches for the optimal solution that satisfies the homogeneity of the film by setting the position of each magnet unit 205 with the highest likelihood of the device state (step 205).

[0164] Next, the output unit 23 calculates the adjustment amount of each magnet unit 205 to the above-mentioned optimal solution based on the optimal solution calculated by the optimal solution calculation unit 22, and outputs it to the display unit (not shown) (step 206). Alternatively, the output unit 23 generates a control command based on the calculated optimal solution of each magnet unit 205, and sets the setting conditions of each magnet unit 205 to the above-mentioned optimal solution via the adjustment unit (not shown).

[0165] The embodiments of the present invention have been described above, but the present invention is not limited to the above embodiments, and various modifications can be made.

[0166] For example, in the above embodiments, the positions of the magnet units 5 and 205 are automatically adjusted by the adjustment unit 10 based on control commands from the control devices 20 and 220. However, this is not a limitation; the positions of the magnet units 5 and 205 can also be adjusted by the operator. In this case, the position adjustment operation of the magnet units 5 and 205 specified in the control units 20 and 220 can be performed based on the adjustment amount calculated by the control units 20 and 220. Therefore, the position adjustment of the magnet units 5 and 205 can be performed quickly regardless of the operator's skill level.

[0167] Furthermore, in the above embodiments, the control devices 20 and 220 are configured as part of the sputtering apparatus 100, but are not limited thereto; the sputtering apparatuses 100 and 200 may also be configured independently. For example, the control devices 20 and 220 may also be configured as part of a management device connected to multiple sputtering apparatuses via a network. In this case, one control device 20 or 220 can perform tasks such as evaluating the homogeneity of the film in multiple sputtering apparatuses, calculating the optimal solution for the position of the magnet units, and generating control commands to adjust the position of the magnet units.

[0168] Furthermore, while the first embodiment described above illustrates an example of arranging multiple magnet units 5 on a single target 3, the present invention can also be applied to a multi-cathode type magnetron sputtering apparatus in which multiple targets 3 are arranged in the same plane. In this case, as... Figure 15 As roughly represented by (A) and (B), it is also configured such that, according to the erosion of each target 3, each magnet unit 5 disposed on the back of each target 3 moves in the X-axis direction and swings in the Y-axis direction, so as to obtain the homogeneity of the film, thereby achieving the same effect as the first embodiment.

[0169] Furthermore, in the above embodiments, an application example of a magnetron sputtering apparatus in which multiple magnet units are respectively configured on multiple targets has been described. However, the present invention can also be applied to a magnetron sputtering apparatus in which a single magnet unit is configured on a single target.

[0170] Explanation of reference numerals in the attached figures

[0171] 1. 201: Vacuum chamber

[0172] 3.203: Target

[0173] 5, 205: Magnet unit

[0174] 10: Adjustment Unit

[0175] 20, 220: Control devices

[0176] 21: Input Section

[0177] 22: Optimal Solution Calculation Department

[0178] 23: Output Department

[0179] 100, 200: Sputtering device

[0180] 221: Forecasting Department

[0181] 222: Revision Department

[0182] 223: Optimization Department

[0183] 224: State Estimation Department

[0184] W: substrate

Claims

1. A sputtering apparatus comprising: One or more targets are arranged facing the substrate and are made of film-forming material; One or more magnet units are disposed on the back side of the target; A control device having an optimal solution calculation unit that calculates an optimal solution for at least one of the set conditions based on input information including at least setting conditions and a measurement value of the film quality of the film-forming material on the substrate formed by the sputtering device, the setting conditions including at least one of the position of each of the magnet units, the movement mode of each of the magnet units, and the current flowing into or the current variation mode of the electromagnet constituting each of the magnet units. as well as The adjustment unit is capable of individually adjusting the setting conditions of the magnet units based on the optimal solution. The optimal solution calculation unit calculates a predicted value for the homogeneity of the film material under the set conditions for any of the magnet units; Based on the input information, the predicted value is corrected to obtain the corrected predicted value; Based on the corrected predicted value, the set conditions of each magnet unit that can satisfy the pre-set specified film homogeneity are obtained as the optimal solution.

2. The sputtering apparatus according to claim 1, wherein, The optimal solution calculation unit makes corrections by estimating the state of the sputtering device based on the input information.

3. The sputtering apparatus according to claim 1 or 2, wherein, The measured values ​​of the film quality of the film-forming material on the substrate include measurement data related to the film quality of the film-forming material at multiple pre-defined measurement points on the substrate.

4. The sputtering apparatus according to claim 3, wherein, The film composition includes at least one of film thickness, thin film resistance, light transmittance, film stress, refractive index, etching characteristics, and film density.

5. The sputtering apparatus according to claim 1 or 2, wherein, The optimal solution calculation unit uses a machine learning machine that has previously learned the relationship between film formation conditions and film quality to calculate the optimal solution.

6. The sputtering apparatus according to claim 1 or 2, wherein, The input information also includes at least one of the following: the type of film-forming material, the surface shape of the target, the voltage applied to the target, the discharge time, the type of sputtering gas, and the pressure during film formation.

7. A method for controlling a sputtering apparatus, the sputtering apparatus comprising one or more targets disposed facing a substrate and made of a film-forming material, and one or more magnet units disposed on the back side of the targets. In the control method of the sputtering device, Based on input information including at least setting conditions and measured values ​​of the film quality of the film-forming material on the substrate formed by the sputtering apparatus, an optimal solution is calculated for the setting conditions of at least one of the magnet units, the setting conditions including at least one of the position of each magnet unit, the movement mode of each magnet unit, and the current flowing into or the current variation mode of the electromagnet constituting each magnet unit. Based on the optimal solution, the setting conditions of the magnet units are adjusted individually. When calculating the optimal solution for the set conditions, a predicted value for the homogeneity of the film material with respect to the set conditions for any of the magnet units is calculated. Based on the input information, the predicted value is corrected to obtain the corrected predicted value; Based on the corrected predicted value, the set conditions of each magnet unit that can satisfy the pre-set specified film homogeneity are obtained as the optimal solution.

8. A control device for a sputtering apparatus for controlling a sputtering apparatus, the sputtering apparatus having one or more targets disposed facing a substrate and made of a film-forming material, and one or more magnet units disposed on the back side of the targets, wherein... The control device for the sputtering apparatus includes an optimal solution calculation unit. This unit calculates an optimal solution for the set conditions regarding at least one of the magnet units based on input information including at least setting conditions and measured values ​​of the film quality of the film-forming material on the substrate formed by the sputtering apparatus. The setting conditions include at least one of the positions of each magnet unit, the movement patterns of each magnet unit, and the current flowing into or the current variation patterns of the electromagnets constituting each magnet unit. The optimal solution calculation unit calculates a predicted value for the homogeneity of the film material under the set conditions for any of the magnet units; Based on the input information, the predicted value is corrected to obtain the corrected predicted value; Based on the corrected predicted value, the set conditions of each magnet unit that can satisfy the pre-set specified film homogeneity are obtained as the optimal solution.

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