Method for determining occurrence state of impurity elements in quartz raw material

Abstract

The application provides a method for determining the occurrence state of impurity elements in quartz raw materials, comprising the following steps: collecting N quartz raw materials, obtaining the cell parameters of each quartz raw material, and satisfying N>=3; obtaining the content of an impurity element to be determined in each quartz raw material; and determining the first occurrence state of the impurity element to be determined according to the correlation between the cell parameters and the content of the impurity element to be determined. The method can accurately determine the occurrence state of each impurity element in the quartz raw material, and is suitable for wide application.

Description

Technical Field

[0001] This invention relates to the field of mineral processing technology, and in particular to a method for determining the occurrence state of impurity elements in quartz raw materials. Background Technology

[0002] High-purity quartz is the material foundation of the high-end silicon industry and plays a vital strategic role. Currently, high-purity quartz is mainly produced using high-purity quartz raw materials; therefore, the presence of impurity elements in the raw materials determines the quality of the high-purity quartz. However, the content of impurity elements in high-purity quartz raw materials is extremely low (trace elements), and when testing for impurity element content, it is easy to find results below the instrument's detection limit. Under these circumstances, determining the presence of impurity elements becomes even more difficult.

[0003] Currently, methods such as SEM-EDS, EPMA-EDS, LA-ICP-MS surface scanning, and SEM-CL are commonly used to study the occurrence state of impurity elements in high-purity quartz raw materials. However, energy dispersive spectroscopy (EDS) can only identify the types of impurity elements present in mineral inclusions; SEM-CL emits almost no visible light in high-purity quartz with extremely low impurity element content, and when the impurity element content is high, it can only observe the microstructure, crystal defects, and uneven distribution of lattice impurities; the spatial distribution of elements shown by LA-ICP-MS surface scanning can only infer the possibility of the presence of lattice impurities.

[0004] Therefore, it is necessary to provide a method that can accurately determine the occurrence state of impurity elements in quartz raw materials. Summary of the Invention

[0005] This invention provides a method for determining the occurrence state of impurity elements in quartz raw materials. This method can accurately determine the occurrence state of each impurity element in quartz raw materials and is suitable for widespread application.

[0006] This invention provides a method for determining the occurrence state of impurity elements in quartz raw materials, comprising:

[0007] Collect N quartz raw materials and obtain the unit cell parameters of each quartz raw material, where N≥3;

[0008] Obtain the content of the impurity element to be determined in each of the quartz raw materials;

[0009] Based on the correlation between the cell parameters and the content of the impurity element to be determined, the first occurrence state of the impurity element to be determined is determined.

[0010] The method described above, wherein determining the first occurrence state of the impurity element to be determined based on the correlation between the unit cell parameters and the content of the impurity element to be determined, includes:

[0011] If the correlation coefficient between the content of the impurity element to be determined and each unit cell parameter is ≥0.6, then the first occurrence state of the impurity element to be determined is inside the crystal lattice.

[0012] Otherwise, the first occurrence state of the impurity element to be determined is outside the crystal lattice.

[0013] In the method described above, the impurity element to be determined is Al.

[0014] The method further includes:

[0015] If the correlation coefficient between the Al element content and each unit cell parameter is ≥0.6, the second occurrence state of Al element is determined based on the correlation between the Al element content and the external impurity element content.

[0016] The content of external impurity elements refers to the content of impurity elements in the first occurrence state outside the crystal lattice.

[0017] The method described above, wherein determining the second occurrence state of Al element based on the correlation between the Al element content and the content of external impurity elements, includes:

[0018] If the correlation coefficient between the Al element content and the content of at least one external impurity element is ≥0.5, then the second occurrence state of Al is outside the crystal lattice.

[0019] In the method described above, the first occurrence state of the impurity element to be determined is outside the crystal lattice;

[0020] The method further includes:

[0021] Based on the correlation between the content of the impurity element to be determined and the content of internal impurity elements, the second occurrence state of the impurity element to be determined is determined.

[0022] The content of internal impurity elements refers to the content of impurity elements inside the crystal lattice in the first occurrence state.

[0023] The method described above, wherein the impurity element to be determined is Al, and the step of determining the second occurrence state of the impurity element to be determined based on the correlation between the content of the impurity element to be determined and the content of internal impurity elements, includes:

[0024] If the correlation coefficient between the Al element content and the content of at least one internal impurity element is ≥0.5, then the second occurrence state of Al is inside the crystal lattice; or,

[0025] The impurity element to be determined is a non-Al element. The step of determining the second occurrence state of the impurity element to be determined based on the correlation between the content of the impurity element to be determined and the content of internal impurity elements includes:

[0026] If the correlation coefficient between the impurity element to be determined and each of the internal impurity elements is ≥0.5, then the second occurrence state of the impurity element to be determined is inside the crystal lattice.

[0027] In the method described above, the cell parameters are obtained by XRD testing of the quartz raw material.

[0028] In the method described above, the XRD test is performed with a Cu target, the scanning range is 5° to 90°, the step size is 0.02°, and the pause time is 20 seconds per step.

[0029] In the method described above, the content of the impurity element to be determined is obtained by LA-ICP-MS testing of the quartz raw material.

[0030] In the method described above, the LA-ICP-MS test includes a beam spot diameter of 30-60 μm, a gas background acquisition time of 25 s, and a signal acquisition time of 40 s.

[0031] The method for determining the occurrence state of impurity elements in quartz raw materials according to the present invention determines the occurrence state of the impurity elements by means of the correspondence between the cell parameters of the quartz raw materials and the content of the impurity elements to be determined in the quartz raw materials. This method can more accurately determine the occurrence state of the impurity elements, and it has a low detection limit, which can assist in the quality evaluation and analysis of quartz raw materials and fill the gap in the quartz industry where it is difficult to determine the occurrence state of lattice elements. The method of the present invention can be particularly used to determine the occurrence state of impurity elements in high-purity quartz raw materials. Attached Figure Description

[0032] To more clearly illustrate the technical solutions in the embodiments of the present invention or related technologies, the accompanying drawings used in the description of the embodiments of the present invention or related technologies are briefly introduced below. Obviously, the drawings described below are merely some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0033] Figure 1 This is a flowchart illustrating the determination of the impurity occurrence state in quartz raw materials in some embodiments of the present invention. Detailed Implementation

[0034] The technical solutions in the embodiments of the present invention will be clearly and completely described below. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0035] This invention provides a method for determining the occurrence state of impurity elements in quartz raw materials, comprising:

[0036] Collect N quartz raw materials and obtain the unit cell parameters of each quartz raw material, where N≥3;

[0037] Obtain the content of the impurity elements to be determined in each quartz raw material;

[0038] Based on the correlation between the cell parameters and the content of the impurity element to be determined, the first occurrence state of the impurity element to be determined is determined.

[0039] In this invention, quartz raw materials refer to raw materials used in the production of quartz. This invention does not impose any particular limitation on the quartz raw materials, as long as they can be used to produce quartz. In some embodiments, the quartz raw materials are high-purity quartz raw materials that can be used to produce high-purity quartz (SiO2 content greater than or equal to 99.9 wt%). It is understood that the N quartz raw materials in this invention originate from the same source.

[0040] Quartz raw material is natural quartz crystal, which contains a crystal lattice formed by silicon and oxygen atoms (a spatial lattice structure in which particles are periodically repeated in the crystal) and mineral inclusions (existing independently within the quartz crystal). Al in quartz 3+ Na + Ca 2+ K + Fe 3+ Mg 2+ Ti 3+ And Li + Plasma can replace Si ions in the crystal lattice and enter the lattice, or it can be present in mineral inclusions.

[0041] In this invention, the parameters of the lattice are unit cell parameters. For example, the unit cell parameters can be the a-axis length a', the c-axis length c', and the volume v of the lattice.

[0042] This invention does not impose a particular limitation on the impurity element to be determined; the impurity element can be any element in the quartz raw material. Further, the element to be determined can be a trace impurity element in the quartz raw material, i.e., an element with a content of less than 0.1 wt%. For example, the impurity element to be determined may include Al, Na, Ca, K, Fe, Mg, Ti, and Li.

[0043] In this invention, the content of the impurity element to be determined in each quartz raw material can be understood as the average content of the element to be determined in the quartz raw material. Specifically, this can be obtained through a method including the following steps: testing the content of the element to be determined at different locations in the quartz raw material, and then calculating the average content of the element at different locations as the content of the element to be determined in the quartz raw material. Taking the Al content in the quartz raw material as an example, the Al content at at least three locations in the quartz raw material can be tested, and the average content of the Al content at these three locations can be calculated as the Al content in the quartz raw material.

[0044] The present invention will be illustrated by taking K as the impurity element to be determined.

[0045] The method for determining the occurrence state of K element in quartz raw materials according to the present invention specifically includes: collecting N quartz raw materials and obtaining the unit cell parameters of each quartz raw material;

[0046] Obtain the K content in each quartz raw material;

[0047] The first occurrence state of K is determined based on the correlation between the K element content and the unit cell parameters.

[0048] The method for determining the occurrence state of impurity elements in quartz raw materials according to the present invention determines the first occurrence state of the impurity element by means of the correlation between the cell parameters of the quartz raw material and the content of the impurity element to be determined in the quartz raw material, which can improve the accuracy of the determination results. The method of the present invention has a certain auxiliary role in the quality evaluation and analysis of quartz raw materials and can fill the gap in the quartz industry where it is difficult to determine the occurrence state of lattice elements. The method of the present invention can be particularly used to determine the occurrence state of impurity elements in high-purity quartz raw materials.

[0049] In some embodiments of the present invention, determining a first occurrence state of the impurity element to be determined based on the correlation between the unit cell parameters and the content of the impurity element to be determined includes:

[0050] If the correlation coefficient between the content of the impurity element to be determined and each unit cell parameter is ≥0.6, then the first occurrence state of the impurity element to be determined is the interior of the crystal lattice.

[0051] Otherwise, the first occurrence state of the impurity element to be determined is outside the crystal lattice.

[0052] This invention uses the correlation coefficient between the content of the impurity element to be determined and each unit cell parameter to represent the correlation between the content of the impurity element to be determined and each unit cell parameter. In some embodiments, a unit cell parameter-content relationship curve for the impurity element to be determined can be established based on each unit cell parameter and the content of the impurity element to be determined, and the slope of each unit cell parameter-content relationship curve can be obtained. The obtained slope is the correlation coefficient between the content of the impurity element to be determined and each unit cell parameter.

[0053] In this invention, an EXCEL software can be used to establish a cell parameter-content relationship curve for the impurity element to be determined, and the slope of the cell parameter-content relationship curve can be obtained, which is the correlation coefficient between the content of the impurity element and the cell parameter. The correlation coefficient can be used to determine the correlation between the content of the impurity element and the cell parameter, and based on the correlation between the content of the impurity element and the cell parameter, the first occurrence state of the impurity element can be determined.

[0054] It is understood that the unit cell parameters include a', c', and v. Therefore, it is necessary to obtain the slopes of the curves formed by a' and the content of the impurity element to be determined, c' and v, respectively. If each slope is ≥0.6, it indicates a strong correlation between the impurity element and the unit cell parameters, and therefore, the first occurrence state of the impurity element can be considered to be inside the quartz raw material's crystal lattice. Otherwise, the correlation between the impurity element and the unit cell parameters can be considered weak, and therefore, the impurity element can be considered not to exist in the quartz raw material's crystal lattice, i.e., the first occurrence state of the impurity element is outside the crystal lattice (within the mineral inclusions of the quartz raw material).

[0055] Al is the main element in quartz raw materials, and its occurrence state is usually quite complex. Therefore, it is possible to further determine the second occurrence state of Al.

[0056] In some embodiments of the present invention, the impurity element to be determined is Al.

[0057] The method also includes:

[0058] If the correlation coefficient between the Al element content and each unit cell parameter is ≥0.6, the second occurrence state of Al element is determined based on the correlation between the Al element content and the external impurity element content.

[0059] The content of external impurity elements is the content of impurity elements outside the crystal lattice in the first occurrence state.

[0060] Specifically, if the impurity element to be determined is Al, and the correlation coefficient between the Al content and each unit cell parameter is ≥0.6, it indicates that the first occurrence state of Al is inside the crystal lattice. The second occurrence state of Al can be determined based on the correlation between the Al content and the content of external impurity elements.

[0061] Furthermore, if the correlation coefficient between the Al element content and the content of at least one external impurity element is ≥0.5, then the second occurrence state of Al is outside the crystal lattice.

[0062] In some implementations, an Al-external impurity element content relationship curve can be established based on the Al element content and the external impurity element content; the correlation coefficient between the Al element content and the external impurity element can be determined based on the slope of the Al-external impurity element content relationship curve; if the correlation coefficient between the Al element content and the content of at least one external impurity element is ≥0.5, it indicates that the Al element and the external impurity element have a high correlation, and the Al and the external impurity element are both located outside the crystal lattice, that is, the second occurrence state of Al is outside the crystal lattice.

[0063] Otherwise, the correlation between the content of Al and the content of each external impurity element is low, and Al does not exist outside the crystal lattice, but only inside the crystal lattice.

[0064] In some embodiments of the present invention, the first occurrence state of the impurity element to be determined is outside the crystal lattice.

[0065] The method of the present invention further includes: determining a second occurrence state of the impurity element to be determined based on the correlation between the content of the impurity element to be determined and the content of internal impurity elements;

[0066] The content of internal impurity elements is the content of impurity elements inside the crystal lattice in the first occurrence state.

[0067] In this invention, when the first occurrence state of the impurity element to be determined is outside the crystal lattice, the second occurrence state of the impurity element to be determined can be further determined. The second occurrence state of the impurity element whose first occurrence state is outside the crystal lattice can be determined based on the correlation between the content of the impurity element to be determined and the content of internal impurity elements.

[0068] Further, if the impurity element to be identified is Al, based on the correlation between the content of the impurity element to be identified and the content of internal impurity elements, the second occurrence state of the impurity element to be identified is determined, including:

[0069] If the correlation coefficient between the Al element content and the content of at least one internal impurity element is ≥0.5, then the second occurrence state of Al is inside the crystal lattice.

[0070] If the correlation coefficient between the Al element content and the content of at least one internal impurity element is ≥0.5, it indicates that the Al element content and the content of at least one internal impurity element are highly correlated, and the Al element and the internal impurity element coexist inside the crystal lattice, that is, the second occurrence state of the Al element is inside the crystal lattice.

[0071] Otherwise, the correlation between the content of Al and the content of each internal impurity element is low, and Al does not exist inside the crystal lattice, but only outside the crystal lattice.

[0072] The impurity element to be determined is a non-Al element. Based on the correlation between the content of the impurity element to be determined and the content of internal impurity elements, the second occurrence state of the impurity element to be determined is determined, including:

[0073] If the correlation coefficient between the impurity element to be determined and each internal impurity element is ≥0.5, then the second occurrence state of the impurity element to be determined is the interior of the crystal lattice.

[0074] If the correlation coefficient between the impurity element to be determined and each internal impurity element is ≥0.5, then the content of the impurity element to be determined is highly correlated with the content of each internal impurity element, and the second occurrence state of the impurity element to be determined is inside the crystal lattice.

[0075] Otherwise, the impurity element to be determined exists only outside the crystal lattice and not inside the crystal lattice, and there is no second occurrence state.

[0076] This invention does not impose particular limitations on the method for obtaining the unit cell parameters of each quartz raw material; methods commonly used in the art can be employed. In some embodiments of this invention, the unit cell parameters are obtained by XRD testing of the quartz raw material.

[0077] Specifically, the quartz raw material is ground into a standard probe sheet (30mm thick). The quartz raw material can be sent to a relevant sheet-making institution (such as an analysis and testing company) to cut, grind, and polish the quartz raw material to obtain the probe sheet; or the quartz raw material can be cut into small rectangular blocks by oneself and then sent to the sheet-making institution to make the probe sheet.

[0078] The probe sheet is placed in the XRD sample chamber to acquire XRD data (.xrdml format file data) of the quartz raw material. The XRD data is opened in Jade software to obtain the XRD pattern of the quartz raw material. The XRD pattern is then fitted and refined to obtain the unit cell parameters of the quartz raw material. In a specific implementation, the XRD curve fitting and refinement analysis is based on the JCPDS standard quartz card numbered 46-1045. The fitting and refinement analysis includes: subtracting the background of the XRD peaks, smoothing the curve appropriately, plotting the fitted curve using the Theta Calibration option, correcting the diffraction angle, and finally using the Calculate lattice and Cell Refinement functions to calculate and obtain the unit cell parameters of the quartz raw material.

[0079] Furthermore, to improve the accuracy of the test results, the XRD test was performed with a Cu target, the scanning range was 5° to 90°, the step size was 0.02°, and the dwell time was 20 seconds per step.

[0080] This invention does not impose particular limitations on the method for obtaining the content of the impurity element to be determined in each quartz raw material; methods commonly used in the art can be selected. In some embodiments of this invention, the content of the impurity element to be determined is obtained by LA-ICP-MS testing of the quartz raw material.

[0081] Specifically, LA-ICP-MS was used to test the quartz raw material and obtain test data. The data was then processed and analyzed using ICPMSDataCal software. Quantitative calculations were performed using a multi-external-standard, non-internal-standard method, signal ranges were selected, and abnormal data were removed. The unit was converted from wt% to ppm to obtain the content of the impurity elements to be determined. In a specific implementation, standard samples were tested after every 10 sample points. The standard samples consisted of SRM610, SRM612, and BCR-2G as a group.

[0082] Furthermore, before performing LA-ICP-MS testing, the probe sheet was carbon-sprayed; and the content of the impurity element to be determined was obtained by performing LA-ICP-MS micro-area testing on the quartz raw material, with the micro-area located in the XRD testing area.

[0083] In this invention, the quartz raw material has high hardness. In order to improve the accuracy of the test results, in some embodiments of this invention, the beam spot diameter is 30-60 μm, the gas background acquisition time is 25 s, and the signal acquisition time is 40 s.

[0084] The technical solution of the present invention will be further described below with reference to specific embodiments.

[0085] Example

[0086] Figure 1 This is a flowchart illustrating the determination of the impurity occurrence state in quartz raw materials in some embodiments of the present invention. For example... Figure 1 As shown, the method for determining the occurrence state of impurity elements in quartz raw materials in this embodiment includes the following steps:

[0087] 1) Select 15 pieces of Huangmao vein quartz raw materials of different qualities and cut each piece of quartz raw material into 15 blocks using a small cutting machine. The length, width and thickness of the blocks are 5 cm, 2 cm and 1 cm respectively. The blocks are sent to the thin plate processing mechanism. After grinding and polishing, they are glued onto a glass slide that is 5 cm long, 2.5 cm wide and 1 mm thick to make 15 probe thin plates.

[0088] 2) Place each probe slice into the sample chamber of the X-ray diffractometer (XRD), scan with Cu target and quasi-speed, scan range 5°~90°, step size 0.02°, pause for 20s at each step for XRD test;

[0089] 3) X-ray diffraction data fitting and refinement analysis of 15 sets of XRD sample data were performed using Jade software to obtain the unit cell parameters (a', c' and v) of the quartz samples. The results are shown in Table 1.

[0090] 4) Conductive carbon material was sprayed onto the probe sheet using a high-vacuum coating instrument. Then, with the carbon-coated surface facing upwards, the probe sheet was fixed to the sample holder with carbon conductive adhesive and placed in the sample chamber of the laser ablation plasma mass spectrometer (LA-ICP-MS). Approximately 10 points were selected for each probe sheet sample. 15 quartz raw materials were divided into 4 groups. Vacuum was drawn and the beam spot diameter was 60 μm. After testing 10 sample points, standard samples (SRM610, SRM612, and BCR-2G in one group) were tested. The gas background acquisition time for each analysis point was 25 s, and the signal acquisition time was 40 s. Experimental analysis and processing data of the micro-area sample were obtained.

[0091] 5) The experimental data obtained in step 4 were processed offline using ICPMS DataCal software, and the units of the impurity elements to be determined were converted (from wt% to ppm) to obtain the average content of the impurity elements to be determined in 15 quartz raw materials. The results are shown in Table 2.

[0092] 6) Use Excel software to generate a correlation analysis table between the cell parameters obtained in step 3 and the content data of the impurity elements to be determined obtained in step 5, as shown in Table 3.

[0093] Table 1

[0094]

[0095]

[0096] Table 2

[0097]

[0098] Table 3

[0099]

[0100]

[0101] As can be seen from Table 3, the correlation coefficients of Al, Na, K, Fe, and Ti with the cell parameters a', c', and v are ≥0.6, respectively, indicating that the first occurrence state of Al, Na, K, Fe, and Ti is inside the crystal lattice; the correlation coefficients of Ca, Mg, and Li with the cell parameters a', c', and v are not all ≥0.6, indicating that the first occurrence state of Ca, Mg, and Li is outside the crystal lattice (in mineral inclusions);

[0102] Since the correlation coefficient between Al and Mg is ≥0.5, it indicates that the second occurrence state of Al is outside the crystal lattice, and Al and Mg are simultaneously found in aluminosilicate mineral inclusions.

[0103] Since the correlation coefficient between Li and each impurity element in the first occurrence state is the interior of the crystal lattice is ≥0.5, the second occurrence state of Li is the interior of the crystal lattice.

[0104] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, and not to limit them; although the present invention has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some or all of the technical features; and these modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present invention.

Claims

1. A method for determining the occurrence state of impurity elements in a quartz raw material, characterized by, The application relates to a method for determining the first occurrence state of an impurity element in quartz raw materials. The method comprises the following steps: collecting N quartz raw materials, obtaining the cell parameters of each quartz raw material, and N>=3; obtaining the content of an impurity element to be determined in each quartz raw material; 2. The method of claim 1, wherein, determining the first occurrence state of the impurity element to be determined according to the correlation between the cell parameters and the content of the impurity element to be determined. The method for determining the first occurrence state of the impurity element to be determined according to the correlation between the cell parameters and the content of the impurity element to be determined comprises the following steps: if the correlation coefficient between the content of the impurity element to be determined and each cell parameter is greater than or equal to 0.6, the first occurrence state of the impurity element to be determined is inside the crystal lattice; otherwise, the first occurrence state of the impurity element to be determined is outside the crystal lattice.

3. The method of claim 2, wherein, The impurity element to be determined is Al element. The method further comprises the following steps: if the correlation coefficient between the content of Al element and each cell parameter is greater than or equal to 0.6, the second occurrence state of Al element is determined according to the correlation between the content of Al element and the content of external impurity element. The content of external impurity element is the content of the impurity element with the first occurrence state outside the crystal lattice.

4. The method of claim 3, wherein, The method for determining the second occurrence state of Al element according to the correlation between the content of Al element and the content of external impurity element comprises the following steps: if the correlation coefficient between the content of Al element and the content of at least one external impurity element is greater than or equal to 0.5, the second occurrence state of Al is outside the crystal lattice.

5. The method of claim 2, wherein, The first occurrence state of the impurity element to be determined is outside the crystal lattice. The method further comprises the following steps: the second occurrence state of the impurity element to be determined is determined according to the correlation between the content of the impurity element to be determined and the content of internal impurity element. The content of internal impurity element is the content of the impurity element with the first occurrence state inside the crystal lattice.

6. The method of claim 5, wherein, The impurity element to be determined is Al element. The method for determining the second occurrence state of the impurity element to be determined according to the correlation between the content of the impurity element to be determined and the content of internal impurity element comprises the following steps: if the correlation coefficient between the content of Al element and the content of at least one internal impurity element is greater than or equal to 0.5, the second occurrence state of Al is inside the crystal lattice; or The impurity element to be determined is non-Al element. The method for determining the second occurrence state of the impurity element to be determined according to the correlation between the content of the impurity element to be determined and the content of internal impurity element comprises the following steps: if the correlation coefficient between the impurity element to be determined and each internal impurity element is greater than or equal to 0.5, the second occurrence state of the impurity element to be determined is inside the crystal lattice.

7. The method according to any one of claims 1 to 6, characterized in that, The cell parameters are obtained by XRD testing on the quartz raw materials.

8. The method of claim 7, wherein, In the XRD testing, a Cu target is used for scanning, the scanning range is 5-90 degrees, the step length is 0.02 degrees, and each step stays for 20 seconds.

9. The method according to any one of claims 1 to 6, characterized in that, The content of the impurity element to be determined is obtained by LA-ICP-MS testing on the quartz raw materials.

10. The method of claim 9, wherein, In the LA-ICP-MS testing, the beam spot diameter is 30-60 microns, the gas background collection time is 25 seconds, and the signal collection time is 40 seconds.

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