Rotary heating apparatus, vapor deposition equipment and methods

Abstract

This application discloses a rotary heating apparatus, a vapor deposition equipment, and a method, relating to the field of semiconductor technology. The rotary heating apparatus includes a support unit, a driving mechanism, and a heating mechanism. The support unit has a support surface for supporting a wafer, and a heating channel is provided within the support unit, with an inlet and an outlet. The driving mechanism is driven by the support unit and is used to drive the support unit to rotate. The heating mechanism is used to supply heat medium to the heating channel. Because the support disk can rotate under the drive of the driving mechanism, film formation occurs during rotation, which can improve the problem of uneven gas distribution on the wafer surface caused by uneven temperature and flow fields within the reaction chamber, thereby improving film quality. Furthermore, by injecting heat medium into the support unit to control its temperature, the support unit can be maintained at a suitable process temperature, and the temperature of the support unit is uniform, which is beneficial for improving deposition quality.

Description

Technical Field

[0001] This application relates to the field of semiconductor technology, and more specifically, to a rotary heating apparatus, vapor deposition equipment, and method. Background Technology

[0002] In the semiconductor field, chemical vapor deposition (CVD) is a common process for depositing film structures. During CVD, gaseous feedstock enters the reaction chamber. Due to the irregular shape of the reaction chamber, the flow field distribution within the chamber is uneven; for example, the gas velocity is faster closer to the gas inlet, which may lead to uneven temperature distribution within the chamber. This uneven temperature field can result in a decrease in film quality. Summary of the Invention

[0003] The purpose of this application is to provide a rotary heating device, vapor deposition equipment and method that can improve the problem of poor film quality caused by uneven temperature field in the prior art.

[0004] The embodiments of this application can be implemented as follows:

[0005] In a first aspect, this application provides a rotary heating device, comprising:

[0006] The support section has a support surface for supporting the wafer, and a heating channel is provided inside the support section, the heating channel having an inlet and an outlet;

[0007] The drive mechanism is connected to the bearing unit in a transmission manner and is used to drive the bearing unit to rotate;

[0008] A heating mechanism forms a loop with the inlet and the outlet, the heating mechanism being used to heat the heat medium in the loop and drive the heat medium to circulate.

[0009] In an optional embodiment, the heating channel includes multiple arc-shaped channels with different radii of curvature. The arc-shaped channels are concentrically arranged and their curvature centers are located on the rotation axis of the bearing. The arc-shaped channels are connected in sequence.

[0010] In an optional embodiment, the support portion is disc-shaped, the curvature center of the arc-shaped channel is located at the center of the support portion, and the inlet and outlet of the heating channel are both located in the middle of the support portion.

[0011] In an optional embodiment, the system includes a heater, an input pipeline, an output pipeline, and a delivery pump. One end of the input pipeline is connected to the inlet of the heating channel, and the other end is connected to the heater. One end of the output pipeline is connected to the outlet of the heating channel, and the other end is connected to the heater. The heater, the input pipeline, the output pipeline, and the heating channel form a loop. The heater is used to heat the heat medium, and the delivery pump is used to drive the heat medium to circulate in the loop.

[0012] In an optional embodiment, the rotary heating device further includes:

[0013] The first temperature sensor is used to detect the temperature of the heat transfer medium in the input pipeline;

[0014] The second temperature sensor is used to detect the temperature of the heat transfer medium in the output pipeline;

[0015] The third temperature sensor is used to detect the temperature of the bearing component.

[0016] In an optional embodiment, a vacuum adsorption port is provided on the bearing surface of the bearing part.

[0017] Secondly, this application provides a vapor deposition apparatus, including a reaction chamber and a rotary heating device according to any of the foregoing embodiments, wherein the support portion of the rotary heating device is disposed in the reaction chamber.

[0018] In an optional embodiment, the system includes two reaction chambers and two rotary heating devices, with the support portions of the two rotary heating devices respectively disposed within the two reaction chambers.

[0019] In an optional embodiment, the reaction chamber includes a top cover, which is vertically opposite to the bearing surface of the bearing portion, and a top cover heating assembly is disposed inside the top cover.

[0020] In an optional embodiment, a clearance hole is provided in the center of the top cover, and the top cover heating assembly includes an inner heating ring and an outer heating ring, which are arranged concentrically around the outside of the clearance hole.

[0021] Thirdly, this application provides a vapor deposition method using the vapor deposition apparatus of any of the foregoing embodiments. The vapor deposition method includes:

[0022] Introduce gaseous raw materials into the reaction chamber;

[0023] The control drive mechanism drives the carrier portion carrying the wafer to rotate, and controls the control heating mechanism to heat the heat medium and drive the heat medium to circulate, so that the temperature of the carrier portion is within a preset temperature range.

[0024] In an optional implementation, the preset temperature range is 55–95°C.

[0025] In an optional implementation, the step of controlling the drive mechanism to drive the bearing part to rotate includes:

[0026] The control drive mechanism drives the load-bearing part to rotate alternately in a first direction and a second direction, the first direction being opposite to the second direction.

[0027] The beneficial effects of the embodiments of this application include, for example:

[0028] The rotary heating apparatus provided in this application includes a support unit, a drive mechanism, and a heating mechanism. The support unit has a support surface for supporting the wafer, and a heating channel is provided within the support unit, with an inlet and an outlet. The drive mechanism is drively connected to the support unit and is used to drive the support unit to rotate. The heating mechanism forms a loop with the inlet and outlet, and is used to heat the heat medium in the loop and drive the heat medium to circulate. In the embodiments of this application, the support disk can rotate under the drive mechanism, and film is formed during the rotation process. This can improve the problem of uneven gas distribution on the wafer surface caused by uneven temperature and flow fields within the reaction chamber, thereby improving the film quality. Furthermore, by injecting heat medium into the support unit to control its temperature, the support unit can be maintained at a suitable process temperature, and the temperature of the support unit is uniform, which is beneficial for improving deposition quality.

[0029] The vapor deposition equipment provided in this application includes the aforementioned rotary heating device, thus ensuring process stability and achieving better deposition quality. The vapor deposition method provided in this application, using the aforementioned vapor deposition equipment, achieves superior deposition results. Attached Figure Description

[0030] To more clearly illustrate the technical solutions of the embodiments of this application, the accompanying drawings used in the embodiments will be briefly introduced below. It should be understood that the following drawings only show some embodiments of this application and should not be regarded as a limitation of the scope. For those skilled in the art, other related drawings can be obtained based on these drawings without creative effort.

[0031] Figure 1 This is a schematic diagram of a rotary heating device in one embodiment of this application;

[0032] Figure 2 This is a schematic diagram of the carrier portion in an embodiment of this application;

[0033] Figure 3 This is a schematic diagram showing the connection between the heating mechanism and the supporting part in one embodiment of this application;

[0034] Figure 4 This is a schematic diagram of a vapor deposition apparatus in one embodiment of this application;

[0035] Figure 5 This is a schematic diagram of the top cover in one embodiment of this application.

[0036] Icons: 010-Vacuum deposition equipment; 100-Rotary heating device; 110-Support unit; 111-Heating channel; 111a-Inlet; 111b-Outlet; 112-Vacuum adsorption port; 113-Third temperature sensor; 120-Drive mechanism; 121-Spindle; 130-Heating mechanism; 131-Heater; 132-Input pipeline; 1321-First temperature sensor; 133-Output pipeline; 1331-Second temperature sensor; 134-Flow valve; 200-Reaction chamber; 210-Top cover; 211-Avoidance hole; 212-Top cover heating assembly; 2121-Inner heating coil; 2122-Outer heating coil; 213-Spray head. Detailed Implementation

[0037] To make the objectives, technical solutions, and advantages of the embodiments of this application clearer, the technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, and not all embodiments. The components of the embodiments of this application described and shown in the accompanying drawings can generally be arranged and designed in various different configurations.

[0038] Therefore, the following detailed description of the embodiments of this application provided in the accompanying drawings is not intended to limit the scope of the claimed application, but merely to illustrate selected embodiments of the application. All other embodiments obtained by those skilled in the art based on the embodiments of this application without inventive effort are within the scope of protection of this application.

[0039] It should be noted that similar labels and letters in the following figures indicate similar items. Therefore, once an item is defined in one figure, it does not need to be further defined and explained in subsequent figures.

[0040] In the description of this application, it should be noted that if terms such as "upper," "lower," "inner," or "outer" are used to indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings, or the orientation or positional relationship in which the product of the invention is usually placed during use, they are only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of this application.

[0041] Furthermore, the terms "first" and "second" are used only to distinguish descriptions and should not be interpreted as indicating or implying relative importance.

[0042] It should be noted that, where there is no conflict, the features in the embodiments of this application can be combined with each other.

[0043] Figure 1This is a schematic diagram of a rotary heating device 100 in one embodiment of this application. Figure 1 As shown, the rotary heating device 100 provided in this embodiment includes a support portion 110, a driving mechanism 120, and a heating mechanism 130. The support portion 110 has a support surface for supporting the wafer. The driving mechanism 120 is connected to the support portion 110 and drives the support portion 110 to rotate. The heating mechanism 130 heats the support portion 110. In this embodiment, during the chemical vapor deposition process of placing the wafer on the support portion 110 to form a film, driving the support portion 110 to rotate reduces the impact of unevenness in the airflow and temperature fields on the film uniformity, resulting in a more uniform film. Furthermore, rotation causes the fluid film layer to distribute more evenly under centrifugal force, which helps ensure that parameters such as film thickness remain within a reasonable range. Additionally, heating the support portion 110 by the heating mechanism 130 controls its temperature to remain at a suitable level, ensuring a suitable deposition process temperature and improving film quality.

[0044] Figure 2 This is a schematic diagram of the carrier portion 110 in an embodiment of this application. Figure 2 As shown, a heating channel 111 is provided inside the support unit 110, and the heating channel 111 has an inlet 111a and an outlet 111b. A heating medium flows through the heating channel 111. By continuously inputting a heating medium of a suitable temperature into the heating channel 111, the support unit 110 can be kept at a suitable temperature. In this embodiment, the heating medium can be water, oil, or other fluid media.

[0045] In this embodiment, the support portion 110 is disc-shaped, with its rotation axis located at its geometric center. The inlet 111a and outlet 111b of the heating channel 111 are both located in the middle of the support portion 110. The heating channel 111 includes multiple arc-shaped channels with different radii of curvature, and these arc-shaped channels are sequentially connected. In this embodiment, the arc-shaped channels are concentrically arranged, and their centers of curvature are located on the rotation axis of the support portion 110, i.e., concentric with the support portion 110. Figure 2 As can be seen, after the heat medium enters through inlet 111a, it enters the innermost arc-shaped channel, then passes through a straight channel to the outermost arc-shaped channel, and then enters each of the inner arc-shaped channels layer by layer from the outside to the inside, finally flowing out from outlet 111b. Inlet 111a and outlet 111b can be located on the side of the bearing part 110 away from the bearing surface.

[0046] Optionally, each arc-shaped channel has a radial width of 9–13 mm and an axial height of 6–9 mm in the support portion 110, thus making the cavity of the heating channel 111 a flat cavity. By increasing the heat exchange area, it is beneficial to improve the heat exchange efficiency between the heat medium in the heating channel 111 and the support portion 110.

[0047] The temperature of the middle and edge of the support portion 110 can be made more uniform by adjusting the spacing between adjacent arc-shaped channels. For example, the channels upstream in the direction of heat medium flow are more sparsely distributed than those downstream because the temperature of the heat medium upstream is higher than that downstream. In this embodiment, the heating channel 111 includes five arc-shaped channels with different radii of curvature distributed radially in the support portion 110. In other optional embodiments, the number of arc-shaped channels can be increased or decreased as needed. It is understood that the denser the distribution of the heating channels 111 on the support portion 110, the more uniform the temperature of the entire support portion 110.

[0048] In this embodiment, a vacuum adsorption port 112 is provided on the support surface, and the support portion 110 can fix the wafer by vacuum adsorption. The vacuum adsorption port 112 is located in the middle region of the support surface.

[0049] exist Figure 1 In this embodiment, a main shaft 121 is connected between the drive mechanism 120 and the support portion 110, and the main shaft 121 supports the support portion 110. The main shaft 121 may include a sleeve and a rotating shaft disposed within the sleeve. One end of the rotating shaft is connected to the support portion 110, and the other end is connected to the drive mechanism 120 for transmission. The rotating shaft can rotate relative to the sleeve so that the sleeve remains stationary when the support portion 110 and the rotating shaft rotate. The drive mechanism 120 may include a motor and other transmission structures (such as gears, racks, belts, chains, etc.).

[0050] Figure 3 This is a schematic diagram showing the connection between the heating mechanism 130 and the support portion 110 in one embodiment of this application. Figure 3 As shown, the heating mechanism 130 includes a heater 131, an input pipe 132, an output pipe 133, and a delivery pump (not shown in the figure). One end of the input pipe 132 is connected to the inlet 111a of the heating channel 111, and the other end is connected to the heater 131. One end of the output pipe 133 is connected to the outlet 111b of the heating channel 111, and the other end is connected to the heater 131. The heater 131, the input pipe 132, the output pipe 133, and the heating channel 111 form a loop. The heater 131 is used to heat the heat medium, and the delivery pump is used to drive the heat medium to circulate in the loop.

[0051] In this embodiment, the input pipe 132 and the output pipe 133 are partially embedded in the main shaft 121. In other optional embodiments, the entire heating mechanism 130 can be mounted on the main shaft 121.

[0052] Furthermore, the rotary heating device 100 also includes a first temperature sensor 1321, a second temperature sensor 1331, and a third temperature sensor 113. The first temperature sensor 1321 detects the temperature of the heat transfer medium in the input pipe 132; the second temperature sensor 1331 detects the temperature of the heat transfer medium in the output pipe 133; and the third temperature sensor 113 detects the temperature of the support portion 110. The first temperature sensor 1321 can detect the temperature of the heat transfer medium entering the heating channel 111; the second temperature sensor 1331 can detect the temperature of the heat transfer medium leaving the heating channel 111. In this embodiment, the third temperature sensor 113 is specifically used to detect the support surface, thereby enabling monitoring of the ambient temperature of the wafer. The information fed back by the first temperature sensor 1321 and the second temperature sensor 1331 (especially the temperature difference) allows technicians to understand the heat exchange between the support portion 110 and the heat transfer medium. The data from the three temperature sensors can also corroborate each other, allowing for timely detection of any abnormality in one sensor.

[0053] Furthermore, the third temperature sensor 113 may include multiple detection points, which are discretely distributed on the bearing surface to detect the temperature of the entire bearing surface.

[0054] Furthermore, a flow meter and a flow valve 134 can be installed on the input pipe 132 or the output pipe 133 to monitor and adjust the flow rate. For example, if the temperature of the bearing section 110 is too low, the flow rate of the heat medium can be increased to raise the temperature of the bearing section 110.

[0055] Optionally, heater 131 can be a water heater, including a water tank and a heating element disposed within the water tank. The water tank can be used to store heat medium, and the heating element can be used to heat the heat medium in the water tank. The delivery pump can be integrated into the water heater or disposed independently outside the water heater.

[0056] Figure 4 This is a schematic diagram of a vapor deposition apparatus 010 in one embodiment of this application. Figure 4 As shown, the vapor deposition apparatus 010 provided in this application embodiment includes a reaction chamber 200 and a rotary heating device 100 as described in the above embodiment. The support portion 110 of the rotary heating device 100 is disposed within the reaction chamber 200, and the main shaft 121 extends from within the reaction chamber 200 and connects with the drive mechanism 120 (not in the...). Figure 4 (As shown in the diagram) Connected. The reaction chamber 200 is used for chemical vapor deposition processes.

[0057] The vapor deposition apparatus 010 of this embodiment includes two reaction chambers 200 and two rotary heating devices 100, with the support portions 110 of the two rotary heating devices 100 respectively disposed within the two reaction chambers 200. Furthermore, the two rotary heating devices 100 share a single heater 131, and two input pipes 132 (and an output pipe 133) branch off from the main pipeline and are connected to the two support portions 110. The advantage of sharing a single heater 131 is that it brings the temperatures of the two support portions 110 closer together, which is beneficial for improving process consistency. The flow rates of the two input pipes 132 can be individually controlled by flow valves 134. If there is a slight temperature deviation in the support portions 110, the temperature of the two support portions 110 can be made to converge by adjusting the flow rates.

[0058] Figure 5 This is a schematic diagram of the top cover 210 in one embodiment of this application. Figure 4 and Figure 5 As shown, the reaction chamber 200 in this embodiment includes a top cover 210, which is vertically opposite to the bearing surface of the bearing portion 110. Gaseous raw materials (such as ammonia) enter the reaction chamber 200 from the top cover 210 and participate in chemical vapor deposition. In this embodiment, a top cover heating assembly 212 is provided inside the top cover 210. The top cover heating assembly 212 is used to assist in adjusting the temperature inside the reaction chamber 200, thereby creating favorable conditions for the deposition process.

[0059] In this embodiment, a clearance hole 211 is provided in the middle of the top cover 210. The clearance hole 211 is used for auxiliary air supply components, such as the spray head 213 in this embodiment. The top cover heating assembly 212 includes an inner heating coil 2121 and an outer heating coil 2122. The inner heating coil 2121 and the outer heating coil 2122 are arranged concentrically around the outside of the clearance hole 211 and are heated by resistance heating. When the temperature is too low due to environmental factors, the top cover heating assembly 212 can be activated to supplement the heat. When there is a temperature difference between the two reaction chambers 200, it can also be adjusted by the top cover heating assembly 212 and the heating mechanism 130 to ensure that the two reaction chambers 200 maintain a high degree of process consistency. Optionally, the power of the inner heating coil 2121 is 1-2KW, and the power of the outer heating coil 2122 is 1.5-3KW.

[0060] This application embodiment also provides a vapor deposition method using the vapor deposition apparatus 010 provided in the above embodiments. The vapor deposition method includes:

[0061] Gaseous raw materials are introduced into the reaction chamber 200; the control drive mechanism 120 drives the support part 110 carrying the wafer to rotate, and the control heating mechanism 130 heats the heat medium and drives the heat medium to circulate, so that the temperature of the support part 110 is within the preset temperature range.

[0062] In this embodiment, the gaseous raw material input into the reaction chamber 200 is a process gas involved in chemical vapor deposition, such as ammonia. Taking the vapor deposition equipment 010 provided in this embodiment as an example, the drive mechanism 120 can be controlled to drive the carrier 110 to rotate at a uniform speed. Because excessively high rotation speed will cause centrifugal diffusion of the fluid film layer, resulting in a thin film layer in the middle and a thick film layer around the edges; and too slow rotation speed will cause the airflow to be unable to be evenly dispersed to all positions on the wafer, the rotation speed is set to 1-24 r / min to improve the uniformity of the film layer.

[0063] Optionally, the control drive mechanism 120 drives the carrier portion 110 to rotate alternately in a first direction and a second direction, the first direction being opposite to the second direction. In one specific embodiment, the carrier portion 110 rotates clockwise for 30 seconds, then counterclockwise for 30 seconds, and so on alternately. This reciprocating rotation reduces the problem of uneven film distribution caused by the inertial force of unidirectional rotation. In one specific embodiment, the two reaction chambers 200 perform deposition synchronously with the same process parameters; when one carrier portion 110 rotates in the first direction, the other carrier portion 110 rotates in the second direction. This ensures that the processes of the two chambers are consistent, resulting in stable film quality.

[0064] Optionally, the preset temperature range for the support unit 110 is 55–95°C. When the third temperature sensor 113 detects that the temperature of the support unit 110 is lower than the preset temperature, the flow valve 134 can be controlled to increase the flow rate, and / or the top cover heating assembly 212 can be controlled to provide auxiliary heating to raise the temperature of the support unit 110. When the third temperature sensor 113 detects that the temperature of the support unit 110 is too high, the top cover heating assembly 212 should be shut down, and the temperature of the support unit 110 should be lowered by reducing the flow rate of the heat transfer medium. When there is a temperature difference between the two support units 110, it can also be balanced by controlling the flow rate of the heat transfer medium or the top cover heating assembly 212. It is understood that temperature regulation can be automated by the controller, thereby saving labor costs.

[0065] In other optional embodiments, data statistics can be performed on the heat medium temperature T inside the heater 131 (e.g., a water heater), the heat medium temperature T1 in the input pipe 132, the heat medium temperature T2 in the output pipe 133, and the temperature T3 of the support unit 110 to establish a temperature database. After the heat medium temperature T inside the heater 131 is set, the software automatically reads T1, T2, and T3 to find the PID tuning relationship between T and the parameters T1, T2, and T3, and then adjusts the heat medium temperature T inside the heater 131 to ensure that the temperature T3 of the support unit 110 meets the process requirements.

[0066] In summary, the rotary heating device 100 provided in this application includes a support portion 110, a driving mechanism 120, and a heating mechanism 130. The support portion 110 has a support surface for supporting the wafer, and a heating channel 111 is provided inside the support portion 110, with an inlet 111a and an outlet 111b. The driving mechanism 120 is drively connected to the support portion 110 and is used to drive the support portion 110 to rotate. The heating mechanism 130 forms a loop with the inlet 111a and the outlet 111b, and is used to heat the heat medium in the loop and drive the heat medium in the loop to circulate. In the embodiments of this application, the support disk can rotate under the drive of the driving mechanism 120, and a film is formed during the rotation process, which can improve the problem of uneven gas distribution on the wafer surface caused by the uneven temperature field and flow field in the reaction chamber 200, thereby improving the film quality. In addition, by injecting a heat transfer medium into the support section 110 to control the temperature of the support section 110, the support section 110 can be kept at a suitable process temperature and the temperature of the support section 110 is uniform, which is beneficial to improving the deposition quality.

[0067] The vapor deposition apparatus 010 provided in this application embodiment includes the aforementioned rotary heating device 100, thus ensuring process stability and achieving better deposition quality. The vapor deposition method provided in this application embodiment, using the aforementioned vapor deposition apparatus 010, achieves superior deposition results.

[0068] The above are merely specific embodiments of this application, but the scope of protection of this application is not limited thereto. Any variations or substitutions that can be easily conceived by those skilled in the art within the technical scope disclosed in this application should be included within the scope of protection of this application. Therefore, the scope of protection of this application should be determined by the scope of the claims.

Claims

1. A rotary heating device, characterized in that, include: A support portion has a support surface for supporting a wafer. A heating channel is provided inside the support portion. The heating channel has an inlet and an outlet, both of which are located in the middle of the support portion. The heating channel includes multiple arc-shaped channels with different radii of curvature. Each arc-shaped channel is concentrically arranged and its center of curvature is located on the rotation axis of the support portion. Each arc-shaped channel is connected in sequence. A drive mechanism, which is connected to the support unit in a transmission manner, is used to drive the support unit to rotate; A heating mechanism forms a loop with the inlet and the outlet, the heating mechanism being used to heat the heat medium in the loop and drive the heat medium to circulate; The heat medium enters through the inlet, first entering the innermost arc-shaped channel, then through a straight channel to the outermost arc-shaped channel, and then from the outside to the inside, it enters each of the innermost arc-shaped channels layer by layer, finally flowing out from the outlet.

2. The rotary heating device according to claim 1, characterized in that, The support part is disc-shaped, the curvature center of the arc-shaped channel is located at the center of the support part, and the inlet and outlet of the heating channel are both located in the middle of the support part.

3. The rotary heating device according to claim 1, characterized in that, The device includes a heater, an input pipeline, an output pipeline, and a delivery pump. One end of the input pipeline is connected to the inlet of the heating channel, and the other end is connected to the heater. One end of the output pipeline is connected to the outlet of the heating channel, and the other end is connected to the heater. The heater, the input pipeline, the output pipeline, and the heating channel form the loop. The heater is used to heat the heat medium, and the delivery pump is used to drive the heat medium to circulate in the loop.

4. The rotary heating device according to claim 3, characterized in that, The rotary heating device further includes: A first temperature sensor is used to detect the temperature of the heat medium in the input pipeline; The second temperature sensor is used to detect the temperature of the heat medium in the output pipeline; The third temperature sensor is used to detect the temperature of the support component.

5. The rotary heating device according to claim 1, characterized in that, A vacuum adsorption port is provided on the bearing surface of the bearing part.

6. A vapor deposition apparatus, characterized in that, The device includes a reaction chamber and a rotary heating device according to any one of claims 1-5, wherein the support portion of the rotary heating device is disposed within the reaction chamber.

7. The vapor deposition apparatus according to claim 6, characterized in that, It includes two reaction chambers and two rotary heating devices, with the supporting parts of the two rotary heating devices respectively disposed in the two reaction chambers.

8. The vapor deposition apparatus according to claim 6, characterized in that, The reaction chamber includes a top cover, which is vertically opposite to the bearing surface of the bearing portion, and a top cover heating assembly is provided inside the top cover.

9. The vapor deposition apparatus according to claim 8, characterized in that, The top cover has a clearance hole in the middle. The top cover heating assembly includes an inner heating ring and an outer heating ring, which are arranged concentrically around the outside of the clearance hole.

10. A vapor deposition method, characterized in that, Using the vapor deposition apparatus of any one of claims 6-9, the vapor deposition method comprises: Gaseous raw materials are introduced into the reaction chamber; The drive mechanism is controlled to drive the carrier portion carrying the wafer to rotate, and the heating mechanism is controlled to heat the heat medium and drive the heat medium to circulate, so that the temperature of the carrier portion is within a preset temperature range.

11. The vapor deposition method according to claim 10, characterized in that, The preset temperature range is 55~95℃.

12. The vapor deposition method according to claim 10, characterized in that, The steps of controlling the drive mechanism to drive the bearing part to rotate include: The drive mechanism is controlled to drive the load-bearing part to rotate alternately in a first direction and a second direction, wherein the first direction is opposite to the second direction.

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