A method for manufacturing a photosensitive integrated circuit build-up insulating film

Abstract

The present application relates to the technical field of insulation film, especially to the field of IPC G03F, more particularly to a preparation method of a photosensitive integrated circuit stacked insulation film. The present application is based on the actual market demand, and scientifically designs the formula of the stacked insulation film material by combining basic research with industrial development, so as to realize the manufacturing of the fine line laminated adhesive film with low thermal expansion coefficient, high frequency low dielectric, low loss, high bonding force. The material has good performance in insulation, mechanics, heat conduction and the like, and does not depend on the expensive precision drilling equipment imported, and these performances enable it to replace ABF in the electronic field such as microchip integrated insulation technology, and have wide application prospect.

Description

Technical Field

[0001] This invention relates to the field of insulating film technology, and more specifically, to a method for preparing a stacked insulating film for photosensitive integrated circuits. Background Technology

[0002] IC substrates, also known as packaging substrates, evolved from HDI boards and represent a technological innovation to adapt to the rapid development of chip packaging technology. They possess excellent characteristics such as high density, high precision, high performance, miniaturization, and thinness. To meet these demands, a new material with excellent insulation, high temperature resistance, and ease of use is urgently needed to improve high-frequency and high-speed signal transmission capabilities. IC substrates are crucial materials in IC packaging, used to connect chips to the PCB motherboard. Their main functions include protecting the chip within the integrated circuit card module package, as well as connecting, fixing, supporting, and dissipating heat from the PCB substrate.

[0003] In recent years, with the ability to match advanced semiconductor manufacturing processes, laminated film substrates have become the standard for FC-BGA packaging. High-performance computing applications and chips such as PCs and processors have rigid requirements for packaging. For high-frequency, high-speed, high-performance ICs such as CPUs, GPUs, FPGAs, and ASICs, the reliance on laminated films in IC substrate packaging processes (including module substrates) has become a significant hurdle. For the chip packaging industry, ABF (Alternating Aluminum Composite Film) is currently the main material used for IC substrate packaging, and to this day, almost 100% of global chip substrate packaging manufacturing relies on this material. However, existing processes using insulating materials such as ABF can only be hot-pressed and cannot be exposed and developed. Furthermore, expensive precision laser drilling equipment is required to connect circuit holes between multiple layers, resulting in high costs and cumbersome and inefficient post-processing steps at the openings, thus limiting the development of the domestic semiconductor industry.

[0004] In addition to the above-mentioned defects, there are many areas that need improvement when using ABF. For example, (1) during the laser drilling process, only one hole can be drilled at a time in each film deposition process. When a large number of holes need to be drilled in a single layer, multiple drillings are required, which is inefficient. (2) Laser drilling can only produce circular holes, which have poor heat dissipation and cannot be used to form other shapes of hole structures, which is not conducive to integrated circuit design. (3) In order to ensure the processing performance of laser drilling and the smoothness of the hole wall, specific inorganic filler materials need to be used in ABF film to match the laser wavelength, such as silicon dioxide. However, the extensive use of inorganic fillers will cause poor bonding force when stacked with other layers, and the high temperature during drilling will cause organic matter to carbonize, making it difficult for some holes to penetrate and resulting in low yield.

[0005] Therefore, it is necessary to develop a new type of insulating material that can reduce production costs and significantly improve production efficiency while ensuring quality and performance in chip substrate fabrication. Summary of the Invention

[0006] To address the aforementioned problems, the first aspect of this invention provides a method for preparing a photosensitive integrated circuit stacked insulating film (ECBF). This method enables the creation of the required opening (hole) through low-temperature lamination and filling followed by exposure and development. A single-layer process is then completed through high-temperature lamination for thorough cross-linking. Subsequently, copper plating, ECBF film deposition, low-temperature lamination, exposure and development, and high-temperature lamination are performed on the surface, stacking layers like building blocks. This method combines insulation carrying and hole opening in one process. It eliminates the need for expensive drilling equipment, significantly improves production efficiency, and produces a high-performance stacked insulating film. It can replace ABF film for chip substrate packaging, and significantly reduces costs.

[0007] The stacked insulating film of this application refers to a film prepared like an adhesive tape. This film not only has excellent insulation properties, but also a low coefficient of thermal expansion, good heat resistance, and excellent mechanical properties. Preferably, the photosensitive integrated circuit stacked insulating film is obtained by coating a colloidal mixture; the raw materials for preparing the colloidal mixture, by weight, include: 15-30 parts of epoxy acrylate prepolymer, 8-12 parts of hydrocarbon polymer, 15-27 parts of epoxy resin, 2-8 parts of photosensitive monomer, 5-10 parts of curing agent, 6-8 parts of photoinitiator, 30-40 parts of filler, and 0-5 parts of solvent (excluding 0 parts).

[0008] The structure of the photosensitive integrated circuit stacked insulating film, from bottom to top, consists of: a first film layer, an adhesive layer prepared from a colloidal mixture, and a second film layer.

[0009] The first and second film layers are not particularly limited; for example, PET film, PE film, OPP film, etc., can play roles such as load-bearing, light transmission, and protection.

[0010] Preferably, the structure of the photosensitive integrated circuit stacked insulating film, from bottom to top, is as follows: PET film, adhesive layer prepared from colloidal mixture, and PE film.

[0011] Preferably, the structure of the photosensitive integrated circuit stacked insulating film, from bottom to top, is as follows: 25μm PET film, 15μm adhesive layer prepared from colloidal mixture, and 18μm PE film.

[0012] The colloidal mixture can be modified according to actual usage requirements, such as 12μm, 18μm, 20μm, 25μm, 35μm, etc.;

[0013] The raw materials for preparing the colloidal mixture also include 0-3 parts of a light-blocking agent; the light-blocking agent can be added according to the actual product requirements.

[0014] The specific implementation process of the preparation method of the photosensitive integrated circuit stacked insulating film is as follows: the raw materials are mixed and then mixed by a pounding agitator and a three-roll mill, and then coated to obtain the photosensitive integrated circuit stacked insulating film.

[0015] The method for preparing the photosensitive integrated circuit stacked insulating film:

[0016] The resulting colloidal mixture is coated onto a PET film, then covered with a PE film, and refrigerated at -15°C or below to obtain the final product.

[0017] Preferably, the raw materials for preparing the colloidal mixture, by weight, include: 20-30 parts of epoxy acrylate prepolymer, 8-12 parts of hydrocarbon polymer, 15-27 parts of epoxy resin, 2-8 parts of photosensitive monomer, 5-10 parts of curing agent, 6-8 parts of photoinitiator, 30-40 parts of filler, and 0-5 parts of solvent.

[0018] The method for synthesizing the epoxy acrylate prepolymer is as follows: after mixing the first epoxy resin, the polymerization inhibitor and the acrylic monomer, a modifier and a first catalyst are added to continue the polymerization reaction to obtain the epoxy acrylate prepolymer.

[0019] Preferably, the first epoxy resin includes a biphenyl phenol type epoxy resin and / or a phenolic epoxy resin; more preferably, it is a phenolic epoxy resin.

[0020] Preferably, the epoxy equivalent of the first epoxy resin is 200-230, the softening point temperature is 85-95℃, and the contents of chloride ions and sodium ions are both ≤5ppm.

[0021] The polymerization inhibitor is not particularly limited, for example, hydroquinone, 4-methoxyphenol, and 2,6-di-tert-butyl-p-cresol.

[0022] Preferably, the acrylic monomer includes one or more of acrylic acid, methacrylic acid, and pentaerythritol triacrylate; more preferably, it is acrylic acid and pentaerythritol triacrylate.

[0023] Preferably, the modifier includes one or more of succinic anhydride, itaconic acid, and maleic anhydride; more preferably, itaconic acid.

[0024] Preferably, the first catalyst comprises one or more of triethylamine, N,N-dimethylaniline, N,N-dimethylbenzylamine, N,N-dimethylaniline, trimethylbenzylammonium chloride, triphenylphosphine, triphenylantimony, and chromium acetylacetone; more preferably, it is N,N-dimethylbenzylamine and triphenylphosphine.

[0025] Preferably, the weight ratio of N,N-dimethylbenzylamine to triphenylphosphine is (1-3):1; more preferably, it is 2:1.

[0026] More preferably, the synthesis method of the epoxy acrylate prepolymer, by weight, is as follows: 10-13 parts of pentaerythritol triacrylate, 0.1-0.5 parts of polymerization inhibitor, and 50-70 parts of phenolic epoxy resin are sequentially added to a reaction vessel. When the mixture is stirred and heated to 90-100°C, a mixture of 10-15 parts of acrylic acid and 0.1-0.5 parts of N,N-dimethylbenzylamine is added dropwise over a period of 30 minutes. After the addition is complete, the temperature is raised to 115°C and reacted for 4 hours. When the acid value is less than 1 mg KOH / g, the temperature is lowered to 90°C, and a mixture of 13 parts of itaconic acid and 0.1-0.3 parts of triphenylphosphine is added dropwise. The reaction is continued for 4 hours, and the reaction is stopped when the acid value is measured to be 50-60 mg KOH / g.

[0027] Preferably, the hydrocarbon polymer is a low molecular weight oligomer formed by free radical polymerization of monomers containing double bonds, such as butadiene, styrene, and divinylbenzene.

[0028] Preferably, the hydrocarbon polymer includes one or two of vinyl polymers, cyclic olefin polymers, styrene-butadiene-propylene polymers, maleimide-styrene resin (MS resin), and benzocyclobutene resin (BCB resin).

[0029] The inventors have made a groundbreaking discovery: by selecting specific hydrocarbon polymers and blending them with epoxy resins, the resulting insulating films exhibit high heat resistance and high reliability. These specific hydrocarbon polymers have low polarity of the CH groups in their molecular chains, and through the cross-linking reaction of unsaturated groups, they can form highly cross-linked structures, reducing the mobility of the groups. Simultaneously, the special molecular structure gives the resin low DK and low Df values, while the high cross-linking also results in high heat resistance and high reliability. By selecting one or two of vinyl polymers, cyclic olefin polymers, styrene-butadiene-propylene polymers, maleimide-styrene resins (MS resins), and benzocyclobutene resins (BCB resins), multifunctional polymeric functional groups are acquired, further expanding the application range of hydrocarbon resins.

[0030] Preferably, the epoxy resin includes one or more of alicyclic epoxy resin, bisphenol A type epoxy resin, bisphenol F type epoxy resin, biphenyl type epoxy resin, and naphthalene-containing epoxy resin;

[0031] The epoxy resin further includes 6-(7-oxabicyclo[4.1.0]heptane-6-yl)-7-oxabicyclo[4.1.0]heptane;

[0032] In one embodiment, the glass transition temperature (Tg) of the alicyclic epoxy resin is 160-170°C, preferably 165°C; the glass transition temperature (Tg) of the 6-(7-oxabicyclo[4.1.0]heptane-6-yl)-7-oxabicyclo[4.1.0]heptane is greater than 200°C; the glass transition temperature (Tg) of the bisphenol A type epoxy resin is 150-160°C; and the glass transition temperature (Tg) of the bisphenol F type epoxy resin is 150-160°C.

[0033] With the increasing demand for high-frequency and high-speed transport in deposited films, even slight ionic impurities can have adverse effects. This invention, by controlling the metal ion content of the raw materials to ≤5ppm and the chlorine content to ≤10ppm, can prepare high-frequency and high-speed photosensitive integrated circuit deposited insulating films with low dielectric loss and broad application prospects.

[0034] The photosensitive monomers include, but are not limited to, one or more of the following: isobornyl methacrylate, polyethylene glycol diacrylate, dipropylene glycol diacrylate, tripropylene glycol diacrylate, 1,6-hexanediol diacrylate, butyl acrylate, lauryl acrylate, trimethylolpropane triacrylate, pentaerythritol triacrylate, pentaerythritol tetraacrylate, hydroxyethyl methacrylate, hydroxypropyl methacrylate, glycidyl methacrylate, and dipentaerythritol pentaacrylate;

[0035] Preferably, the photoinitiator includes at least two of the following: 907, DETX, BCIM, diethyl benzoate, PAG-20304, thiocontinate or iodocontinate antimonate, thiocontinate or iodocontinate phosphate, and thiocontinate or iodocontinate borate.

[0036] Preferably, the curing agent includes one or two of the following: diphenyl sulfone curing agents, alicyclic amine curing agents, phthalic anhydride curing agents, and peroxide initiators.

[0037] The weight ratio of the diphenyl sulfone curing agent, phthalic anhydride curing agent, and peroxide initiator is (0-2):(0.5-2):(0-2).

[0038] The phthalic anhydride curing agent is at least one of methylhexahydrophthalic anhydride and methyltetrahydrophthalic anhydride.

[0039] Preferably, the diphenyl sulfone curing agent includes at least one of 3,3'-diaminodiphenyl sulfone, 4,4'-diaminodiphenyl sulfone, and 2-aminodiphenyl sulfone.

[0040] Preferably, the curing temperature of the diphenyl sulfone curing agent is 150-170℃.

[0041] Preferably, the curing temperature of the phthalic anhydride curing agent is 130-150℃.

[0042] Preferably, the initiation temperature of the peroxide initiator is 130-150°C.

[0043] Preferably, the filler comprises silica microspheres.

[0044] Preferably, the silica microspheres include hollow silica microspheres or solid silica microspheres.

[0045] The solid silica microspheres are microspheres coated with PTFE.

[0046] Preferably, the weight ratio of the hollow silica microspheres to the solid silica microspheres is 1:(0.5-2); more preferably, it is 1:1.

[0047] Preferably, the hollow silica microspheres have a particle size of 0.5-2 μm.

[0048] Preferably, the particle size of the solid silica microspheres is 1-5 μm.

[0049] The inventors have made a groundbreaking discovery: by selecting specific silica microspheres, unique effects can be achieved in improving the coefficient of thermal expansion, dielectric loss, and thermal conductivity. The hollow silica microspheres used reduce the overall density of the insulating film, thereby lowering dielectric loss. Simultaneously, the hollow structure also reduces the coefficient of thermal expansion, improving thermal stability. The solid silica microspheres used are coated with PTFE, which possesses the significant low dielectric and high-temperature resistance characteristics of fluorine structures. Utilizing the hybridization of hollow and solid microspheres, a unique polymer "encapsulation and filling" effect is achieved, effectively improving the impact resistance of the deposited film and enhancing UV light transmittance.

[0050] Preferably, the solvent includes two or more of ketones, aromatics, and esters.

[0051] It also includes: 0-5 parts of a light-blocking agent. There are no special restrictions on the choice of light-blocking agent.

[0052] The preparation method of the colloidal mixture is as follows: epoxy acrylate prepolymer, hydrocarbon polymer, epoxy resin, filler and solvent are mixed and heated to 80-110℃ until they are dissolved and uniform, then cooled to room temperature, and then photosensitive monomer, catalyst and curing agent are added, mixed evenly and filtered to obtain the final product.

[0053] The process of using the photosensitive integrated circuit stacked insulating film includes the following steps:

[0054] S1. Vacuum lamination: Before use, remove the insulating film from the cold storage and allow it to warm up. Tear off the PE film and cover the surface of the copper conductive layer of the chip substrate with the adhesive mixture for vacuum lamination. The pressure is 7-10 kg / cm². 2Simultaneously, it is heated to 80-110℃, and the adhesive film melts and fills: under low temperature heating conditions, the insulating film melts and becomes a fluid that automatically flows and levels to cover the copper conductive layer and the step difference;

[0055] S2; Exposure and Development Opening: According to the circuit design pattern requirements, directly expose the PET film with 160-200mJ energy using a 365nm wavelength UV direct tracing machine, then peel off the PET film, and develop it with 1% NaCO3 solution to wash away the film in the unexposed areas.

[0056] S3. High-temperature heating for complete curing: Under high-temperature heating (170-180℃), the exposed and cured polymer insulating film is cured a second time to form a high-density insulating film. After copper plating and etching, the steps from S1 to S3 are repeated.

[0057] The photosensitive integrated circuit stacking insulating film of this application is highly flexible and convenient to use; when it is necessary to set up a multilayer photosensitive integrated circuit stacking insulating film, it is only necessary to plate copper on the previous insulating film, and then repeat steps S1, S2 and S3 on the copper conductive layer, so that it can be stacked layer by layer.

[0058] Beneficial effects:

[0059] 1. By selecting specific raw materials to synthesize epoxy acrylate prepolymers, epoxy acrylate oligomers with both acrylic acid double bonds and carboxyl groups are formed, so that the prepared insulating film has the characteristics of high temperature resistance, low dielectric, low expansion coefficient, flame retardancy and chemical resistance. The introduction of carboxyl groups can make the unexposed part during exposure and development neutralized and stripped by 1% sodium carbonate solution.

[0060] 2. By selecting specific hydrocarbon polymers, the prepared insulating film has low dielectric properties and film-forming properties.

[0061] 3. By selecting specific epoxy resins, it is possible to achieve both photosensitive curing of the insulating film and balance mechanical performance requirements, while also realizing the IPN network interpenetration effect to improve high temperature resistance.

[0062] 4. By setting up a step-by-step curing process, the chip carrier board packaging process is made more convenient, greatly improving the product molding rate. This allows chip carrier board preparation to reduce production costs and eliminate reliance on imported expensive precision laser drilling machines, while also significantly improving production efficiency, and ensuring quality and performance. Furthermore, the shape and size of the openings can be diversified, facilitating the flexibility of chip circuit design.

[0063] 5. This invention provides a stacked insulating film that can be fully cured through step-by-step curing and has excellent performance. The research and development of fine line stacked film ECBF using a step-by-step curing process is mainly applied to high-end substrates such as IC packaging, FC-BGA, and chip packaging.

[0064] 6. This invention, starting from actual market demand, scientifically designs the formulation of multilayer adhesive film materials by combining basic research with industrial development, realizing the manufacture of fine circuit multilayer adhesive films with low thermal expansion coefficient, high frequency and low dielectric, low loss and high adhesion. This material has good properties in insulation, mechanics and thermal conductivity, which makes it have broad application prospects in electronic fields such as microchip integrated insulation technology. Detailed Implementation

[0065] Example

[0066] Example 1

[0067] Example 1 provides a method for preparing a stacked insulating film for a photosensitive integrated circuit, the specific implementation process of which is as follows:

[0068] The photosensitive integrated circuit stacked insulating film is obtained by coating a colloidal mixture; the raw materials for preparing the colloidal mixture, by weight, include: 20 parts of epoxy acrylate prepolymer, 8 parts of hydrocarbon polymer, 15 parts of epoxy resin, 5 parts of photosensitive monomer, 9 parts of curing agent, 8 parts of photoinitiator, 30 parts of filler, and 5 parts of solvent.

[0069] The structure of the photosensitive integrated circuit stacked insulating film, from bottom to top, consists of: a 25μm PET film, a 15μm adhesive layer prepared from a colloidal mixture, and an 18μm PE film.

[0070] The specific implementation process of the preparation method of the photosensitive integrated circuit stacked insulating film is as follows: the raw materials are mixed and then mixed by a pounding agitator and a three-roll mill, and then coated to obtain the photosensitive integrated circuit stacked insulating film.

[0071] The preparation method of the photosensitive integrated circuit stacked insulating film is as follows: the obtained colloidal mixture is coated on a PET film, then a PE film is applied, and the film is refrigerated at -15°C or below to obtain the final product.

[0072] The method for synthesizing the epoxy acrylate prepolymer is as follows: after mixing the first epoxy resin, the polymerization inhibitor and the acrylic monomer, a modifier and a first catalyst are added to continue the polymerization reaction to obtain the epoxy acrylate prepolymer.

[0073] The first epoxy resin is a phenolic epoxy resin. The phenolic epoxy resin has an epoxy equivalent of 200-230 and a softening point temperature of 85-95℃. The chloride and sodium ion contents are both ≤5ppm. The phenolic epoxy resin was purchased from NPCN-704 in South Asia.

[0074] The acrylic monomer is acrylic acid and pentaerythritol triacrylate.

[0075] The modifier is itaconic acid.

[0076] The first catalyst is N,N-dimethylbenzylamine and triphenylphosphine.

[0077] The synthesis method of the epoxy acrylate prepolymer, by weight, is as follows: 12 parts of PETA monomer, 0.1 parts of polymerization inhibitor (hydroquinone), and 60 parts of phenolic epoxy resin are added sequentially to a reaction vessel. When stirring and heating to 95±5℃, a mixture of 14 parts of acrylic acid and 0.2 parts of N,N-dimethylbenzylamine is added dropwise over 30 minutes. After the addition is complete, the temperature is raised to 115℃ and reacted for 4 hours. When the acid value is less than 1 mg KOH / g, the temperature is lowered to 90℃, and a mixture of 13 parts of itaconic acid and 0.1 parts of triphenylphosphine is added dropwise. The reaction is continued for 4 hours. When the acid value is measured to be 50-60 mg KOH / g, the reaction is stopped.

[0078] The hydrocarbon polymer is maleimide-styrene resin and benzocyclobutene resin.

[0079] The weight ratio of maleimide-styrene resin to benzocyclobutene resin is 1:1.

[0080] The maleimide-styrene resin was purchased from Matsuura Corporation, Japan, model PB-3006; the benzocyclobutene resin was purchased from Dow Chemical Company, DVS-BCB.

[0081] The epoxy resin is an alicyclic epoxy resin, 6-(7-oxabicyclo[4.1.0]heptane-6-yl)-7-oxabicyclo[4.1.0]heptane, and a naphthalene-containing epoxy resin. The weight ratio of the alicyclic epoxy resin, 6-(7-oxabicyclo[4.1.0]heptane-6-yl)-7-oxabicyclo[4.1.0]heptane, and the naphthalene-containing epoxy resin is 1:1:1; the alicyclic epoxy resin is of the 201 type from Daicel, Japan; the naphthalene-containing epoxy resin is of the HP-4032D type, manufactured by DIC Corporation, Japan.

[0082] The photosensitive monomer is pentaerythritol triacrylate.

[0083] The photoinitiator is benzoin diethyl ether, PAG-20304 and photoinitiator 907, and the weight ratio of benzoin diethyl ether, PAG-20304 and photoinitiator 907 is 1:1:2.

[0084] The curing agent is a diphenyl sulfone curing agent, methyl hexahydrophthalic anhydride and benzoyl peroxide (BPO), and the weight ratio of the diphenyl sulfone curing agent, methyl hexahydrophthalic anhydride and benzoyl peroxide is 1:2:1.

[0085] The diphenyl sulfone curing agent is 4,4'-diaminodiphenyl sulfone.

[0086] The filler is silica microspheres.

[0087] The silica microspheres are hollow silica microspheres and solid silica microspheres.

[0088] Solid silica microspheres are microspheres coated with PTFE.

[0089] The weight ratio of hollow silica microspheres to solid silica microspheres is 1:1.

[0090] The hollow silica microspheres have a particle size of 0.5-2 μm.

[0091] The solid silica microspheres have a particle size of 1-5 μm.

[0092] The hollow silica microspheres were purchased from Ningbo Particle Technology Co., Ltd. as HKT-120.

[0093] The solid silica microspheres were purchased from Yatoma, Japan.

[0094] The solvent is xylene and methyl ethyl ketone.

[0095] The weight ratio of xylene to methyl ethyl ketone is 1:1.

[0096] The preparation method of the colloidal mixture is as follows: epoxy acrylate prepolymer, hydrocarbon polymer, epoxy resin, filler and solvent are mixed and heated to 80°C until they are uniformly dissolved. Then, the mixture is cooled to room temperature, and then photosensitive monomer, catalyst and curing agent are added and dissolved uniformly. After filtration, the mixture is obtained.

[0097] The process of using the photosensitive integrated circuit stacked insulating film includes the following steps:

[0098] S1. Vacuum lamination: Before use, remove the insulating film from the cold storage and allow it to warm up. Tear off the PE film and cover the surface of the copper conductive layer of the chip substrate with the adhesive mixture for vacuum lamination at a pressure of 8 kg / cm². 2 Simultaneously, it is heated to 100°C, and the adhesive film melts and fills: under low temperature heating conditions, the insulating film melts and becomes a fluid that automatically flows and levels to cover the copper conductive layer and the step difference;

[0099] S2; Exposure and Development Opening: According to the circuit design pattern requirements, directly expose the PET film with 190-200mJ energy using a 365nm wavelength UV direct tracing machine, then peel off the PET film, and develop it with 1% NaCO3 solution to wash away the film in the unexposed areas.

[0100] S3. High-temperature heating for complete curing: Under high-temperature heating (175℃), the exposed and cured polymer insulating film is cured a second time to form a high-density insulating film. After copper plating and etching, the steps from S1 to S3 are repeated.

[0101] Example 2

[0102] Example 2 provides a photosensitive integrated circuit stacked insulating film, with the specific implementation method being the same as Example 1, except that: the photosensitive integrated circuit stacked insulating film is obtained by coating a colloidal mixture; the raw materials for preparing the colloidal mixture, by weight, include: 20 parts of epoxy acrylate prepolymer, 8 parts of hydrocarbon polymer, 27 parts of epoxy resin, 5 parts of photosensitive monomer, 8 parts of photoinitiator, 5 parts of curing agent, 30 parts of filler, and 5 parts of solvent.

[0103] The epoxy resin is an alicyclic epoxy resin, 6-(7-oxabicyclo[4.1.0]heptane-6-yl)-7-oxabicyclo[4.1.0]heptane, bisphenol A epoxy resin, bisphenol F epoxy resin, and naphthalene-containing epoxy resin; the weight ratio of the alicyclic epoxy resin, 6-(7-oxabicyclo[4.1.0]heptane-6-yl)-7-oxabicyclo[4.1.0]heptane, bisphenol A epoxy resin, bisphenol F epoxy resin, and naphthalene-containing epoxy resin is 1:1:1:1:1; the alicyclic epoxy resin is model Unox201; the naphthalene-containing epoxy resin is model HP-4032D, manufactured by dic Co., Ltd. of Japan; the bisphenol A epoxy resin is model RE-310S, and the bisphenol F epoxy resin is model RE-303S, manufactured by KAYAKU Co., Ltd. of Japan.

[0104] The curing agent is methylhexahydrophthalic anhydride.

[0105] Example 3

[0106] Example 3 provides a photosensitive integrated circuit stacked insulating film, with the same specific implementation as Example 1, except that: the photosensitive integrated circuit stacked insulating film is obtained by coating a colloidal mixture; the raw materials for preparing the colloidal mixture, by weight, include: 20 parts of epoxy acrylate prepolymer, 8 parts of hydrocarbon polymer, 20 parts of epoxy resin, 5 parts of photosensitive monomer, 6 parts of photoinitiator, 6 parts of curing agent, 30 parts of filler, and 5 parts of solvent.

[0107] The epoxy resin is a naphthalene-containing epoxy resin;

[0108] The photoinitiator is benzoin diethyl ether and photoinitiator 907, with a weight ratio of benzoin diethyl ether and photoinitiator 907 of 1:2.

[0109] Example 4

[0110] Example 4 provides a photosensitive integrated circuit stacked insulating film, with the specific implementation method being the same as Example 1, except that: the photosensitive integrated circuit stacked insulating film is obtained by coating a colloidal mixture; the raw materials for preparing the colloidal mixture, by weight, include: 15 parts of epoxy acrylate prepolymer, 0 parts of hydrocarbon polymer, 27 parts of epoxy resin, 5 parts of photosensitive monomer, 8 parts of photoinitiator, 10 parts of curing agent, 30 parts of filler, and 5 parts of solvent.

[0111] The epoxy resin is an alicyclic epoxy resin, bisphenol A epoxy resin, or bisphenol F epoxy resin; the weight ratio of the alicyclic epoxy resin, bisphenol A epoxy resin, and bisphenol F epoxy resin is 5:10:12.

[0112] The curing agent is methylhexahydrophthalic anhydride.

[0113] Example 5

[0114] Example 5 provides a photosensitive integrated circuit stacked insulating film, with the same specific implementation as Example 1, except that: the photosensitive integrated circuit stacked insulating film is obtained by coating a colloidal mixture; the raw materials for preparing the colloidal mixture, by weight, include: 26 parts of epoxy acrylate prepolymer, 0 parts of hydrocarbon polymer, 20 parts of epoxy resin, 5 parts of photosensitive monomer, 6 parts of photoinitiator, 8 parts of curing agent, 30 parts of filler, and 5 parts of solvent.

[0115] The epoxy resin is bisphenol A epoxy resin or bisphenol F epoxy resin; the weight ratio of bisphenol A epoxy resin to bisphenol F epoxy resin is 1:1.

[0116] The curing agent is methylhexahydrophthalic anhydride.

[0117] The photoinitiator is benzoin diethyl ether and photoinitiator 907, with a weight ratio of benzoin diethyl ether to photoinitiator 907 of 1:2.

[0118] Example 6

[0119] Example 6 provides a photosensitive integrated circuit stacked insulating film, with the same implementation method as Example 1, except that the solid silica microspheres are not coated with PTFE.

[0120] Performance testing methods

[0121] 1. Viscosity of colloidal mixtures

[0122] The viscosity of the colloidal mixtures prepared in Examples 1-5 was tested according to GB / T 22314-2008 "Method for Determination of Viscosity of Plastic Epoxy Resins", and the results are recorded in Table 1.

[0123] 2. Dielectric constant (Dk)

[0124] The dielectric constant of the photosensitive integrated circuit stacked insulating film prepared in Examples 1-5 was tested according to GB / T4722-2017 "Test Method for Rigid Copper Clad Laminates for Printed Circuits", and the results are recorded in Table 1.

[0125] 3. Dielectric loss (Df)

[0126] The dielectric loss of the photosensitive integrated circuit stacked insulating films prepared in Examples 1-5 was tested in accordance with GB / T1409-2006 "Recommended methods for measuring the permittivity and dielectric loss factor of electrical insulating materials at power frequency, audio frequency and high frequency (including meter wave wavelength)". The results are recorded in Table 1.

[0127] 4. Coefficient of thermal expansion

[0128] The coefficient of thermal expansion of the photosensitive integrated circuit stacked insulating films prepared in Examples 1-5 was tested using a Diamond static thermomechanical analyzer, and the results are recorded in Table 1.

[0129] 5. Glass transition temperature

[0130] The glass transition temperature of the photosensitive integrated circuit stacked insulating films prepared in Examples 1-5 was tested using the TMA (thermomechanical analyzer) probe method described in GB / T4722-2017 "Test Methods for Rigid Copper Clad Laminates for Printed Circuits". The results are recorded in Table 1.

[0131] 6. Peel strength

[0132] The photosensitive integrated circuit stacked insulating films prepared in Examples 1-5 were tested for their peel strength using the method described in GB / T2791-1995 "Adhesives T Peel Strength Test Method Flexible Materials to Flexible Materials". The results are recorded in Table 1.

[0133] 7. Tensile strength

[0134] The tensile strength of the photosensitive integrated circuit stacked insulating films prepared in Examples 1-5 was tested using the method described in GB / T13542.2-2021 "Films for Electrical Insulation". The results are recorded in Table 1.

[0135] 8. Young's modulus

[0136] The Young's modulus of the photosensitive integrated circuit stacked insulating films prepared in Examples 1-5 was tested using the method described in GB / T5594.2-1985 "Test Method for Performance of Structural Ceramic Materials for Electronic Components - Young's Modulus and Poisson's Ratio Test Method", and the results are recorded in Table 1.

[0137] Table 1

[0138]

Claims

1. A method for preparing a photosensitive integrated circuit stacked insulating film, characterized in that, The photosensitive integrated circuit stacked insulating film is obtained by coating a colloidal mixture. The raw materials for preparing the colloidal mixture, by weight, include: 20-30 parts of epoxy acrylate prepolymer, 8-12 parts of hydrocarbon polymer, 15-27 parts of epoxy resin, 2-8 parts of photosensitive monomer, 5-10 parts of curing agent, 6-8 parts of photoinitiator, 30-40 parts of filler, and 0-5 parts of solvent. The structure of the photosensitive integrated circuit stacked insulating film, from bottom to top, is as follows: a first film layer, an adhesive layer prepared from a colloidal mixture, and a second film layer; The synthesis method of the epoxy acrylate prepolymer by weight is as follows: 10-13 parts of pentaerythritol triacrylate, 0.1-0.5 parts of polymerization inhibitor, and 50-70 parts of phenolic epoxy resin are added sequentially to a reaction vessel. When the mixture is stirred and heated to 90-100℃, a mixture of 10-15 parts of acrylic acid and 0.1-0.5 parts of N,N-dimethylbenzylamine is added dropwise over a period of 30 minutes. After the addition is complete, the temperature is raised to 115℃ and reacted for 4 hours. When the acid value is less than 1 mg KOH / g, the temperature is lowered to 90℃, and a mixture of 13 parts of itaconic acid and 0.1-0.3 parts of triphenylphosphine is added dropwise. The reaction is continued for 4 hours. When the acid value is measured to be 50-60 mg KOH / g, the reaction is stopped. The hydrocarbon polymer includes one or more of vinyl polymers, cyclic olefin polymers, styrene-butadiene-propylene polymers, maleimide-styrene resins, and benzocyclobutene resins; The epoxy resin includes one or more of the following: 6-(7-oxabicyclo[4.1.0]heptane-6-yl)-7-oxabicyclo[4.1.0]heptane, alicyclic epoxy resin, bisphenol A type epoxy resin, bisphenol F type epoxy resin, biphenyl type epoxy resin, and naphthalene-containing epoxy resin; The filler includes silica microspheres, which are hollow silica microspheres and solid silica microspheres; the weight ratio of hollow silica microspheres to solid silica microspheres is 1:(0.5-2); the solid silica microspheres are microspheres coated with PTFE.

2. The method for preparing a photosensitive integrated circuit stacked insulating film according to claim 1, characterized in that, The resulting colloidal mixture is coated onto the first or second film layer and then post-processed to obtain the final product.

3. The method for preparing a photosensitive integrated circuit stacked insulating film according to claim 1, characterized in that, The curing agent includes one or two of the following: diphenyl sulfone curing agents, alicyclic amine curing agents, phthalic anhydride curing agents, and peroxide initiators.

4. A photosensitive integrated circuit stacked insulating film prepared by the method for preparing a photosensitive integrated circuit stacked insulating film according to any one of claims 1-3.

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