Clustering plate and plasma processing device

Abstract

This invention discloses a cluster plate and a plasma processing apparatus. The cluster plate includes: a plasma forming surface, a gas supply surface, a plurality of gas flow paths, a plurality of hollow cathode slits formed on the plasma forming surface, and a plurality of gas outlets disposed within each of the plurality of hollow cathode slits. The plurality of hollow cathode slits are arranged in a non-intersecting manner. The plurality of gas flow paths are opened within each of the plurality of hollow cathode slits. The plasma forming surface has a plurality of depth-defined regions. In each of the plurality of depth-defined regions, the depth of each of the plurality of hollow cathode slits is set to increase in the thickness direction. The boundaries between two adjacent depth-defined regions and the plurality of hollow cathode slits do not intersect each other.

Description

Technical Field

[0001] This invention relates to a clustering plate and a plasma processing device. Background Technology

[0002] Plasma processing apparatuses are known to use plasma to decompose raw material gases and, for example, form thin films on the substrate surface to be coated. Such plasma processing apparatuses, for example as shown in Patent Documents 1 and 2, construct a processing chamber consisting of a cavity, an electrode flange, and an insulating flange held by the cavity and the electrode flange. The processing chamber has a film-forming space (reaction chamber).

[0003] A clustering plate and a base are arranged within the processing chamber, and a substrate is disposed on the base. The clustering plate is connected to an electrode flange and has multiple nozzles. A space is formed between the clustering plate and the electrode flange. This space serves as a gas supply space for introducing raw material gas. In other words, the clustering plate divides the space within the processing chamber into a film-forming space and a gas supply space, in which a film is formed on the substrate.

[0004] In the manufacturing of FPDs (flat panel displays) such as liquid crystal displays and organic EL displays, large-area substrates are processed using methods such as plasma CVD. During this plasma treatment of the substrate, it is difficult to control the film thickness distribution formed on the substrate. High-precision control of the electron density, plasma density, and free radical density on the substrate surface is required.

[0005] To achieve such control, it is known to provide a cathode cavity on a cluster plate that serves as the cathode, utilizing the hollow cathode effect. Specifically, cluster plates with cathode cavities are known. A method for forming a cathode cavity on such a cluster plate is disclosed, for example, in Patent Document 1. Patent Document 1 discloses a method for providing a deep hole or a groove with a concave shape on the substrate-facing surface of the cluster plate opposite to the substrate, and for deepening the depth of the hole or groove. Furthermore, a method for increasing the opening of the hole or groove along the outer side of the substrate on the substrate-facing surface is also disclosed.

[0006] Similarly, methods for forming grooves on the surface of a cluster plate are known (Patent Document 2).

[0007] Patent Document 1: US Patent No. 10262837

[0008] Patent Document 2: Japanese Patent Application Publication No. 2002-025984

[0009] However, with conventional techniques, the control of plasma generation density is insufficient, and the accuracy of film thickness distribution on the substrate is inadequate. Therefore, there is a need to improve the control of plasma generation density and the accuracy of film thickness distribution. Furthermore, if the cluster plate is designed to form slits (grooves) on a large area to achieve good film thickness distribution, protrusions, sharp angles, and steps are generated within the slits, which can cause abnormal discharges. Summary of the Invention

[0010] The present invention was made in view of the above circumstances and is intended to achieve the following objectives.

[0011] 1. To improve the thickness distribution of the film formed on the substrate.

[0012] 2. It can generate plasma at high density.

[0013] 3. To stabilize the plasma distribution density along the processing surface of the substrate and improve the uniformity of plasma processing.

[0014] 4. Suppress the generation of abnormal discharges.

[0015] One aspect of the present invention relates to a cluster plate that uniformly supplies processing gas from a gas supply space to a plasma forming space within a chamber of a plasma processing apparatus, and serves as a cathode electrode disposed opposite to an anode electrode. The cluster plate includes: a plasma forming surface opposite to the anode electrode and facing the plasma forming space; a gas supply surface located on the opposite side of the plasma forming surface and facing the gas supply space; a plurality of gas flow paths communicating from the gas supply surface to the plasma forming surface in the thickness direction of the cluster plate; a plurality of hollow cathode slits formed on the plasma forming surface; and a plurality of gas outlets disposed within each of the plurality of hollow cathode slits, and uniformly supplying the processing gas throughout the entire region of the plasma forming surface, the plurality of hollow cathode slits covering the plasma forming space. The plasma forming surface is configured in a manner that does not intersect with each other. Multiple gas flow paths are opened inside each of the multiple hollow cathode slits. Multiple gas outlets are formed in a row along the length direction of each of the multiple hollow cathode slits. These gas outlets can equally supply the processing gas to each of the multiple hollow cathode slits along their respective length directions. The plasma forming surface has a central region, an edge region, and multiple depth-defined regions that are divided from each other along a direction from the central region toward the edge region. In each of the multiple depth-defined regions, the depth of each of the multiple hollow cathode slits is set to increase in the thickness direction. The boundaries between two adjacent depth-defined regions and each of the multiple hollow cathode slits do not intersect with each other. This solves the aforementioned problem.

[0016] In one aspect of the present invention, the distance between two adjacent gas nozzles among the plurality of gas nozzles can be set to be uniform when viewed in a planar manner.

[0017] In one aspect of the present invention, the plurality of hollow cathode slits, when viewed in a planar manner, can each be formed to extend in a straight line.

[0018] In one aspect of the present invention, in a cluster plate, the long sides of two adjacent hollow cathode slits among the plurality of hollow cathode slits may be parallel to each other.

[0019] In one aspect of the present invention, the boundary between two adjacent depth-defined regions can be configured along the long side of the hollow cathode slit.

[0020] In one aspect of the present invention, the depth of each of the plurality of hollow cathode slits in each of the plurality of depth setting regions can be set such that the positions of the plurality of gas outlets in the thickness direction are equal and the plasma forming surface is curved.

[0021] In one aspect of the present invention, the depth of each of the plurality of hollow cathode slits in each of the plurality of depth setting regions can be set such that the positions of the plurality of gas outlets in the thickness direction change and the plasma forming surface is planar.

[0022] In a cluster plate according to one aspect of the present invention, each of the plurality of depth setting regions may have a plurality of circumferential regions, each of the plurality of circumferential regions being divided in the circumferential direction, wherein in each of the plurality of circumferential regions, all the plurality of hollow cathode slits are arranged in parallel and facing the same direction, and each of the plurality of hollow cathode slits in the central region is arranged in parallel and facing the same direction as the hollow cathode slit in any of the circumferential regions of the depth setting region adjacent to the central region.

[0023] In a cluster plate according to one aspect of the invention, at the boundary between two adjacent circumferential regions in each of the plurality of depth setting regions, the ends of the hollow cathode slits in one circumferential region and the ends of the hollow cathode slits in the other circumferential region may be staggered.

[0024] In one aspect of the present invention, the plurality of gas flow paths may be formed to extend from the gas outlet to the gas supply surface and have a plurality of orifices corresponding one-to-one with the plurality of gas flow paths, wherein the lengths of the plurality of orifices in the thickness direction are equal to each other in all of the plurality of gas flow paths.

[0025] In one aspect of the present invention, in a cluster plate, when viewed in a planar manner, the distance between two adjacent gas nozzles among the plurality of gas nozzles can be less than the distance between two electrodes that sandwich the plasma forming space and form the plasma.

[0026] One aspect of the present invention relates to a plasma processing apparatus comprising: an electrode flange connected to a high-frequency power supply; a chamber having sidewalls and a bottom; an insulating flange disposed between the chamber and the electrode flange; a processing chamber having a plasma formation space surrounded by the chamber, the electrode flange, and the insulating flange; a support portion housed within the processing chamber and for mounting a substrate having a processing surface, the support portion serving as an anode electrode; and a cluster plate according to the above-described embodiment, the cluster plate being spaced apart from the electrode flange and facing the electrode flange to form the gas supply space, the cluster plate being spaced apart from the support portion and facing the support portion to form the plasma formation space.

[0027] One aspect of the present invention relates to a cluster plate that uniformly supplies processing gas from a gas supply space to a plasma forming space within a chamber of a plasma processing apparatus, and serves as a cathode electrode disposed opposite to an anode electrode. The cluster plate includes: a plasma forming surface opposite to the anode electrode and facing the plasma forming space; a gas supply surface located on the opposite side of the plasma forming surface and facing the gas supply space; a plurality of gas flow paths communicating from the gas supply surface to the plasma forming surface in the thickness direction of the cluster plate; a plurality of hollow cathode slits formed on the plasma forming surface; and a plurality of gas outlets disposed within each of the plurality of hollow cathode slits, and uniformly supplying the processing gas throughout the entire region of the plasma forming surface, the plurality of hollow cathode slits covering the plasma forming space. The plasma forming surfaces are configured in a manner that they do not intersect each other. Multiple gas flow paths are opened inside each of the multiple hollow cathode slits. Multiple gas outlets are formed in a row along the length direction of each of the multiple hollow cathode slits. These gas outlets can equally supply the processing gas to each of the multiple hollow cathode slits along their respective length directions. The plasma forming surface has a central region, an edge region, and multiple depth-defined regions that are divided from each other along a direction from the central region toward the edge region. In each of the multiple depth-defined regions, the depth of each of the multiple hollow cathode slits is set to increase in the thickness direction. The boundaries between two adjacent depth-defined regions and each of the multiple hollow cathode slits do not intersect each other.

[0028] According to the above structure, the entire area of ​​the plasma-forming surface of the shower plate exposed in the plasma-forming space can be covered by hollow cathode slits that do not intersect each other. Compared with conventional shower plates with planar plasma-forming surfaces, plasma processing can be performed under conditions of increased plasma density, free radical density, and electron density.

[0029] Furthermore, a single gas outlet is formed in the width direction of the hollow cathode slit. Multiple gas outlets are formed in the length direction of the hollow cathode slit. These multiple gas outlets can supply processing gas evenly into the hollow cathode slit along its length. The multiple gas outlets are disposed inside the hollow cathode slit. Thus, within each of the multiple hollow cathode slits, the multiple gas outlets can uniformly supply processing gas along the length direction of the hollow cathode slit. Furthermore, the multiple gas outlets are configured to uniformly supply processing gas across the entire plasma forming surface. Therefore, a uniform plasma density can be achieved throughout the entire region of the plasma forming space.

[0030] Furthermore, in each of the multiple depth-setting regions divided from each other along the direction from the center region toward the edge region, the depth of the hollow cathode slit in the thickness direction is set to increase. Therefore, unlike conventional cluster plates with planar plasma-forming surfaces, it is possible to prevent the plasma density in the edge region (periphery) from decreasing compared to the center region. A uniform plasma density can be achieved throughout the entire region of the plasma-forming surface.

[0031] Furthermore, the boundaries between two adjacent depth-defined regions do not intersect with each other. Therefore, no steps or protrusions are formed within the interiors of the hollow cathode slits or on the surfaces exposed in the plasma generation space. This prevents abnormal discharges during plasma generation.

[0032] Through the above-mentioned effects, uniformity can be obtained in the two-dimensional distribution of plasma processing characteristics along the processing surface of the substrate, and the stability of plasma processing characteristics can be improved.

[0033] Here, the statement "multiple hollow cathode slits cover the plasma forming surface" means that the openings of multiple hollow cathode slits on the plasma forming surface are arranged close to each other at a specified distance, and that multiple hollow cathode slits are arranged in a state where the distance between the openings of two adjacent hollow cathode slits does not change throughout the entire region of the plasma forming surface.

[0034] For example, it can be illustrated that the openings of a plurality of hollow cathode slits are arranged parallel to each other, such that the longitudinal directions of the plurality of hollow cathode slits each have the same orientation. In this case, when viewed in a plane, the openings of the hollow cathode slits can be arranged such that a plurality of gas nozzles, equally arranged in each of the plurality of hollow cathode slits, open along the longitudinal direction at the central position in the width direction of the hollow cathode slit.

[0035] Furthermore, the statement "multiple hollow cathode slits are arranged in a manner that does not intersect each other" means that the openings of the hollow cathode slits on the plasma forming surface do not form curved corners in either acute or obtuse angles. For example, it could be illustrated by multiple hollow cathode slits whose openings are aligned parallel to each other along their length. Alternatively, the statement means that when the openings of two hollow cathode slits extending in different directions and adjacent to each other approach each other, the end of the opening of one hollow cathode slit does not connect with any part of the opening of the other hollow cathode slit. In other words, the relative distance between the parallel opposite edges along the length of the opening edges of the hollow cathode slits does not change. Alternatively, the statement means that when two adjacent hollow cathode slits intersect each other in their length direction, the hollow cathode slits are arranged in a manner where the openings of the multiple hollow cathode slits are not connected.

[0036] In one aspect of the present invention, the distance between two adjacent gas nozzles among the plurality of gas nozzles is set to be uniform when viewed in a planar manner.

[0037] According to the above structure, gas can be supplied to the plasma formation space in a uniform distribution. Therefore, plasma processing can be performed with uniform plasma density distribution, free radical density distribution, and electron density distribution. Consequently, uniformity can be achieved in the two-dimensional distribution of plasma processing characteristics along the processing surface of the substrate, and the stability of the plasma processing characteristics can be improved.

[0038] In one aspect of the present invention, the plurality of hollow cathode slits are each formed to extend in a straight line when viewed in a planar manner.

[0039] Based on the above structure, multiple hollow cathode slits can be easily configured parallel to the length direction. Simultaneously, the boundaries of the depth-defined region and the hollow cathode slits can be easily configured in parallel. Therefore, uniform plasma density distribution, uniform free radical density distribution, and uniform electron density distribution can be easily achieved while preventing abnormal discharge. Thus, uniformity can be obtained in the two-dimensional distribution of plasma processing characteristics along the processing surface of the substrate, and the stability of the plasma processing characteristics can be improved.

[0040] In one aspect of the present invention, in a cluster plate, the long sides of two adjacent hollow cathode slits among the plurality of hollow cathode slits are parallel to each other.

[0041] Based on the above structure, hollow cathode slits can be easily arranged at uniform intervals, and hollow cathode slits can be arranged at uniform density within a depth-defined region. Therefore, it is easy to achieve uniform plasma density distribution, uniform free radical density distribution, and uniform electron density distribution while preventing abnormal discharge. Thus, uniformity can be obtained in the two-dimensional distribution of plasma processing characteristics along the processing surface of the substrate, and the stability of plasma processing characteristics can be improved.

[0042] In one aspect of the present invention, the boundaries of the two adjacent depth-defined regions are arranged along the long side of the hollow cathode slit.

[0043] Based on the above structure, the boundaries of the depth-defined region and the hollow cathode slits can be easily arranged in parallel. This allows for the easy achievement of uniform plasma density distribution, uniform free radical density distribution, and uniform electron density distribution while preventing abnormal discharges. Therefore, uniformity can be obtained in the two-dimensional distribution of plasma processing characteristics along the processed surface of the substrate, and the stability of the plasma processing characteristics can be improved.

[0044] In one aspect of the present invention, the depth of each of the plurality of hollow cathode slits in each of the plurality of depth setting regions is set such that the positions of the plurality of gas outlets in the thickness direction are equal and the plasma forming surface is curved.

[0045] The method for setting the depth of multiple hollow cathode slits is as follows: When the depth of the hollow cathode slits varies along the plasma forming surface (along the length or width direction of the plasma forming surface), hollow cathode slits of the same depth are formed on the entire surface of the plasma forming surface. Then, the depth of each of the multiple hollow cathode slits is set according to the depth of the hollow cathode slits set in each of the multiple depth setting regions. Specifically, the hollow cathode slits are formed in a manner that the hollow cathode slits are deepened in the central region of the plasma forming surface. Furthermore, the plasma forming surface is removed in a manner that the hollow cathode slits become shallower from the central region of the plasma forming surface toward the edge region, thereby forming the hollow cathode slits. As a result, hollow cathode slits with a predetermined depth can be easily formed. In addition, multiple hollow cathode slits of different depths can be formed with high precision on the entire surface simply by removing the surface of the plate. This reduces the number of manufacturing steps, shortens manufacturing time, and lowers manufacturing costs. At the same time, cluster plates can be manufactured with high machining accuracy. Therefore, uniformity can be easily obtained in the two-dimensional distribution of plasma processing characteristics along the processing surface of the substrate, and the stability of plasma processing characteristics can be easily improved.

[0046] In one aspect of the present invention, the depth of each of the plurality of hollow cathode slits in each of the plurality of depth setting regions can be set such that the positions of the plurality of gas outlets in the thickness direction change and the plasma forming surface is planar.

[0047] The method for setting the depth of each of the multiple hollow cathode slits is as follows. The hollow cathode slits are formed by setting their depth to a value within a depth setting region along the plasma forming surface (either along the length or width direction of the plasma forming surface). Furthermore, a gas outlet and a gas flow path are formed corresponding to the bottom position within the hollow cathode slit, which varies in the thickness direction. This allows for the easy formation of hollow cathode slits with a predetermined depth. Simultaneously, the planar shape of the plasma forming surface, which serves as the cathode electrode, can be maintained. Therefore, the impact on plasma processing characteristics caused by variations in the distance between the two electrodes forming the plasma is easily reduced.

[0048] In a cluster plate according to one aspect of the present invention, each of the plurality of depth setting regions has a plurality of circumferential regions, each of the plurality of circumferential regions being divided in the circumferential direction, wherein in each of the plurality of circumferential regions, all the plurality of hollow cathode slits are arranged in parallel and facing the same direction, and each of the plurality of hollow cathode slits in the central region is arranged in parallel and facing the same direction as the hollow cathode slit in any of the circumferential regions of the depth setting region adjacent to the central region.

[0049] According to the above structure, in each of the multiple circumferential regions within the multiple depth-defined regions, all hollow cathode slits are arranged parallel to each other and facing the same direction. Therefore, uniform gas supply can be easily achieved in each of the multiple circumferential regions. Uniform plasma density distribution, uniform free radical density distribution, and uniform electron density distribution can be easily achieved in each of the multiple circumferential regions. Furthermore, the hollow cathode slits can be easily and uniformly arranged even in the central region. Therefore, uniform plasma density distribution, uniform free radical density distribution, and uniform electron density distribution can be easily achieved while preventing the generation of abnormal discharges.

[0050] In a cluster plate according to one aspect of the invention, in each of the plurality of depth-defined regions, at the boundary between two adjacent circumferential regions, the ends of the hollow cathode slits of one circumferential region are staggered with the ends of the hollow cathode slits of the other circumferential region.

[0051] According to the above structure, in the plasma formation space, the process gas flows radially along the plasma formation surface from its center. This prevents the process gas from reaching the edge of the plasma formation surface without crossing the hollow cathode slits during its flow. In other words, in the hollow cathode slits arranged such that their ends intersect at the boundaries of two adjacent circumferential regions, it is easy to achieve a structure where the flow of the process gas along the plasma formation surface intersects with the hollow cathode slits. This allows for full utilization of the hollow cathode effect. Furthermore, the desired plasma density distribution, free radical density distribution, and electron density distribution can be easily achieved along the entire radial flow of the process gas.

[0052] In one aspect of the present invention, the plurality of gas flow paths are formed to extend from the gas outlet to the gas supply surface and have a plurality of orifices corresponding one-to-one with the plurality of gas flow paths, wherein the lengths of the plurality of orifices in the thickness direction are equal to each other in all of the plurality of gas flow paths.

[0053] According to the above structure, the flow rate of the processing gas ejected from the gas outlet into the hollow cathode slit is controlled by the orifice. This allows for uniform flow rates of the processing gas in each of the multiple gas outlets. Furthermore, even in multiple hollow cathode slits of different depths, the orifice length is equal in all orifices. Therefore, the flow rate of the processing gas can be controlled.

[0054] In one aspect of the present invention, in a cluster plate, when viewed in a plane, the distance between two adjacent gas outlets among the plurality of gas outlets is less than the distance between two electrodes that sandwich the plasma forming space and form the plasma.

[0055] In order to obtain the required and desired plasma density, radical density and electron density for plasma processing carried out in the plasma formation space, the necessary processing gas can be uniformly supplied to the plasma formation space along the plasma formation surface.

[0056] One aspect of the present invention relates to a plasma processing apparatus comprising: an electrode flange connected to a high-frequency power supply; a chamber having sidewalls and a bottom; an insulating flange disposed between the chamber and the electrode flange; a processing chamber having a plasma formation space surrounded by the chamber, the electrode flange, and the insulating flange; a support portion housed within the processing chamber and for mounting a substrate having a processing surface, the support portion serving as an anode electrode; and a cluster plate according to the above-described embodiment, the cluster plate being spaced apart from the electrode flange and facing the electrode flange to form the gas supply space, the cluster plate being spaced apart from the support portion and facing the support portion to form the plasma formation space.

[0057] According to the above structure, the plasma forming surface of the cluster plate exposed in the plasma forming space can be covered by multiple non-intersecting hollow cathode slits. Compared with conventional cluster plates having planar plasma forming surfaces, plasma processing such as plasma CVD film formation can be performed on a substrate supported by a support portion under conditions of increased plasma density, free radical density, and electron density.

[0058] Furthermore, a single gas outlet is formed in the width direction of the hollow cathode slit. Multiple gas outlets are formed in the length direction of the hollow cathode slit. In the length direction of the hollow cathode slit, the multiple gas outlets can equally supply processing gas into the hollow cathode slit. The multiple gas outlets are disposed inside the hollow cathode slit. Therefore, within each of the multiple hollow cathode slits, the multiple gas outlets can uniformly supply processing gas in the length direction of the hollow cathode slit. Furthermore, the multiple gas outlets are configured to uniformly supply processing gas across the entire surface of the plasma forming surface and the entire surface of the substrate. Therefore, a uniform plasma density can be achieved throughout the entire region of the plasma forming space. Therefore, uniform film formation, etc., can be achieved.

[0059] Furthermore, in each of the multiple depth-defined regions located on the outer side of the plasma-forming surface in either the length or width direction, the depth of the hollow cathode slit in the thickness direction is set to increase. Therefore, it is possible to prevent the plasma density from decreasing at the periphery compared to the center, as is the case with conventional cluster plates having a planar plasma-forming surface without a hollow cathode slit. According to the above structure, uniform plasma density and uniform film formation can be achieved throughout the entire region of the plasma-forming surface.

[0060] Furthermore, the boundary of the depth-setting region does not intersect with the hollow cathode slit. Therefore, no steps or protrusions will form inside the hollow cathode slit or on the exposed surface in the plasma generation space. This prevents abnormal discharges during plasma generation.

[0061] Therefore, uniformity can be obtained in the two-dimensional distribution of plasma processing characteristics along the processing surface of the substrate, and the deterioration of film formation characteristics caused by abnormal discharge can be prevented and its stability improved.

[0062] According to one aspect of the present invention, the cluster plate and plasma processing apparatus can achieve a better film thickness distribution on the substrate. It can improve the uniformity of processing with a higher plasma density. It can stabilize the plasma distribution density along the processing surface of the substrate, thereby improving the uniformity of plasma processing. Attached Figure Description

[0063] Figure 1 This is a schematic longitudinal sectional view of the plasma processing apparatus according to the first embodiment of the present invention.

[0064] Figure 2 This is a schematic plan view showing the gas outlet of the cluster plate in the plasma processing apparatus according to the first embodiment of the present invention.

[0065] Figure 3 This is a perspective view of the cluster plate in the plasma processing apparatus according to the first embodiment of the present invention, showing the gas flow path, gas outlet, and hollow cathode slit.

[0066] Figure 4 This is a perspective view of the cluster plate in the plasma processing apparatus according to the first embodiment of the present invention, and is a perspective view showing other examples of the gas flow path, gas outlet, and hollow cathode slit.

[0067] Figure 5 This is a plan view showing the opening of the hollow cathode slit and the gas ejection outlet of the cluster plate in the plasma processing apparatus according to the first embodiment of the present invention.

[0068] Figure 6 This is a plan view showing other examples of the opening of the hollow cathode slit of the cluster plate and the gas ejection outlet in the plasma processing apparatus according to the first embodiment of the present invention.

[0069] Figure 7 This is a plan view showing other examples of the opening of the hollow cathode slit of the cluster plate and the gas ejection outlet in the plasma processing apparatus according to the first embodiment of the present invention.

[0070] Figure 8 This is a perspective view showing a hollow cathode slit in the vicinity of the edge region of the cluster plate in the plasma processing apparatus according to the first embodiment of the present invention.

[0071] Figure 9 This is a perspective view showing a hollow cathode slit in the region near the central region of a cluster plate in a plasma processing apparatus according to the first embodiment of the present invention.

[0072] Figure 10 This is a plan view showing the depth setting area of ​​the hollow cathode slit of the cluster plate in the plasma processing apparatus according to the first embodiment of the present invention.

[0073] Figure 11This is a cross-sectional view showing the depth setting region of the hollow cathode slit of the cluster plate in the plasma processing apparatus according to the first embodiment of the present invention.

[0074] Figure 12 This is a cross-sectional view showing the boundary between adjacent depth-setting regions of the cluster plate in the plasma processing apparatus according to the first embodiment of the present invention.

[0075] Figure 13 It is a cross-sectional view showing the relationship between the depth of the hollow cathode slit and the plasma forming surface.

[0076] Figure 14 This is a cross-sectional view showing the plasma formation state in the hollow cathode slit of the cluster plate in the plasma processing apparatus according to the first embodiment of the present invention.

[0077] Figure 15 This is a perspective view showing an example of a hollow cathode slit in a cluster plate.

[0078] Figure 16 This is a cross-sectional view showing another example of the depth setting region of the hollow cathode slit of the cluster plate in the plasma processing apparatus according to the first embodiment of the present invention.

[0079] Figure 17 This is a cross-sectional view showing the depth setting region of the hollow cathode slit of the cluster plate in the plasma processing apparatus according to the second embodiment of the present invention.

[0080] Figure 18 This is a cross-sectional view showing the boundary between adjacent depth-setting regions of the cluster plate in the plasma processing apparatus according to the second embodiment of the present invention.

[0081] Figure 19 This is a cross-sectional view showing the boundary of the depth setting region of the hollow cathode slit of the cluster plate in the plasma processing apparatus according to the second embodiment of the present invention.

[0082] Figure 20 This is a cross-sectional view showing the plasma formation state in the plasma processing apparatus according to the second embodiment of the present invention.

[0083] Figure 21 This is a plan view showing the gas outlet of the cluster plate and the depth setting area of ​​the hollow cathode slit in the plasma processing apparatus according to the third embodiment of the present invention.

[0084] Figure 22 This is a plan view showing the gas outlet of the cluster plate and the depth setting area of ​​the hollow cathode slit in the plasma processing apparatus according to the fourth embodiment of the present invention.

[0085] Figure 23 This is a plan view showing the gas outlet of the cluster plate and the depth setting area of ​​the hollow cathode slit in the plasma processing apparatus according to the fifth embodiment of the present invention.

[0086] Figure 24 This is a plan view showing the gas outlet of the cluster plate and the depth setting area of ​​the hollow cathode slit in the plasma processing apparatus according to the sixth embodiment of the present invention.

[0087] Figure 25 This is a plan view showing the gas outlet of the cluster plate and the depth setting area of ​​the hollow cathode slit in the plasma processing apparatus according to the seventh embodiment of the present invention.

[0088] Figure 26 This is a plan view showing the gas outlet of the cluster plate and the depth setting area of ​​the hollow cathode slit in the plasma processing apparatus according to the eighth embodiment of the present invention.

[0089] Figure 27 This is a diagram illustrating an embodiment of the cluster plate and plasma processing apparatus of the present invention.

[0090] Figure 28 This is a diagram illustrating an embodiment of the cluster plate and plasma processing apparatus of the present invention.

[0091] Figure 29 This is a diagram illustrating an embodiment of the cluster plate and plasma processing apparatus of the present invention.

[0092] Figure 30 This is a diagram illustrating an embodiment of the cluster plate and plasma processing apparatus of the present invention.

[0093] Figure 31 This is a diagram illustrating an embodiment of the cluster plate and plasma processing apparatus of the present invention.

[0094] Figure 32 This is a diagram illustrating an embodiment of the cluster plate and plasma processing apparatus of the present invention.

[0095] Figure 33 This is a diagram illustrating an embodiment of the cluster plate and plasma processing apparatus of the present invention.

[0096] Figure 34 This is a diagram illustrating an embodiment of the cluster plate and plasma processing apparatus of the present invention.

[0097] Figure 35 This is a diagram illustrating an embodiment of the cluster plate and plasma processing apparatus of the present invention.

[0098] Figure 36This is a diagram illustrating an embodiment of the cluster plate and plasma processing apparatus of the present invention. Detailed Implementation

[0099] <First Implementation Method>

[0100] The cluster plate and plasma processing apparatus according to the first embodiment of the present invention will now be described with reference to the accompanying drawings.

[0101] Figure 1 This is a schematic cross-sectional view showing the plasma processing apparatus according to this embodiment. Figure 1 In the figure, reference numeral 1 indicates a plasma processing device.

[0102] In addition, in the figures used in the following description, the structural elements are set to a size that can be identified on the figures, so sometimes the dimensions and ratios of the structural elements are appropriately made different from the actual size.

[0103] Regarding the definition of direction, "vertical direction" is the same as the direction observed from the vertical direction of plasma processing device 1. Sometimes, the observation along the vertical direction is referred to as a top-down view.

[0104] "Horizontal" refers to a direction orthogonal to the vertical direction. The vertical direction can also be called the Z-direction. In this case, the horizontal direction includes both the X and Y directions.

[0105] The plasma processing apparatus 1 involved in this embodiment is a film formation apparatus using plasma CVD. For example... Figure 1 As shown, the plasma processing apparatus 1 includes a processing chamber 3, which has a plasma forming space 2a (film forming space) that serves as a reaction chamber.

[0106] The processing chamber 3 is constructed of a vacuum chamber 2 (chamber), a cathode flange 4 (electrode flange), and an insulating flange 23 sandwiched between the vacuum chamber 2 and the cathode flange 4.

[0107] <Vacuum Chamber 2>

[0108] The vacuum chamber 2 has a bottom 11 (inner bottom surface), side walls 24 (walls) erected from the periphery of the bottom 11, and mounting flanges 21 surrounding the end openings (upper openings) of the side walls 24. The vacuum chamber 2 is made of aluminum or an aluminum alloy.

[0109] A bottom opening is formed at the bottom 11 of the vacuum chamber 2. A support column 16 is inserted through this bottom opening. The support column 16 is located at the bottom of the vacuum chamber 2.

[0110] The front end of the support column 16 is located inside the vacuum chamber 2. A plate-shaped base 15 (support part) is connected to the front end of the support column 16. The base 15 is arranged parallel to the plasma forming surface 100a, which is the lower surface of the shower plate 100, as described later.

[0111] The support column 16 is connected to a lifting drive unit 16A (lifting mechanism) located outside the vacuum chamber 2. The support column 16 can move vertically via the lifting drive unit 16A. That is, the base 15 connected to the front end of the support column 16 is configured to be able to move vertically.

[0112] Outside the vacuum chamber 2, a bellows (not shown) is provided to cover the outer periphery of the support column 16. When the support column 16 moves up and down, the bellows maintains the airtightness of the plasma formation space 2a.

[0113] In the vacuum chamber 2, an exhaust pipe 27 is connected at a position closer to the bottom 11 than the base 15. A vacuum pump 28 is installed at the front end of the exhaust pipe 27. The vacuum pump 28 reduces the pressure by creating a vacuum state inside the vacuum chamber 2.

[0114] <Installation flange 21>

[0115] An mounting flange 21 is provided at the upper end of the side wall 24 of the vacuum chamber 2.

[0116] The mounting flange 21 is disposed around the sidewall 24 such that it protrudes outward from an opening at the end of the sidewall 24. Both the sidewall 24 and the mounting flange 21 are constructed of a conductive material. The sidewall 24 and the mounting flange 21 can be integral or separate components. For example, if the sidewall 24 and the mounting flange 21 are separate components, a sealing component such as an O-ring can be disposed between the sidewall 24 and the mounting flange 21. The sidewall 24 and the mounting flange 21 are formed of aluminum, aluminum alloy, or the like. The upper surface 21a of the mounting flange 21 has a generally horizontal planar shape.

[0117] <Cathode flange 4, cluster plate 100>

[0118] The cathode flange 4 is mounted on the upper part of the vacuum chamber 2 via the insulating flange 23.

[0119] The cathode flange 4 is generally flat. The cathode flange 4 covers the end opening of the vacuum chamber 2 formed by the mounting flange 21. The cathode flange 4 has a peripheral portion 4a. The lower surface of the peripheral portion 4a of the cathode flange 4 is opposite to the upper surface 21a of the mounting flange 21. The lower surface of the peripheral portion 4a of the cathode flange 4 is located approximately parallel to the upper surface 21a of the mounting flange 21.

[0120] A shielding cover may be placed above the cathode flange 4. A cluster plate 100 is arranged below the cathode flange 4 at vertical intervals from it.

[0121] The cluster plate 100 is located below the cathode flange 4. Laterally, the cluster plate 100 is located further inward than the mounting flange 21 in the lateral direction of the cathode flange 4. The cluster plate 100 is arranged parallel to the lower surface of the cathode flange 4. The gas supply surface 100b, which is the upper surface of the cluster plate 100, is also arranged parallel to the lower surface of the cathode flange 4. The cluster plate 100 is suspended from the cathode flange 4. The cluster plate 100 is supported by support columns 4b extending downward from the lower surface of the cathode flange 4. The support columns 4b are constructed of conductor. There are multiple support columns 4b. Alternatively, the support columns 4b may not be constructed of multiple components. For example, the shape of the support columns 4b in the top view of the cathode flange 4 may be frame-shaped. In this case, the frame-shaped support columns 4b are arranged inside the insulating support portion 8.

[0122] The cathode flange 4 and the cluster plate 100 are electrically connected via the support column 4b. An insulating support 8 is disposed outside the periphery of the cluster plate 100. The insulating support 8 is located on the lateral outer side of the cluster plate 100. The insulating support 8 is located on the lateral inner side of the mounting flange 21. The insulating support 8 and the mounting flange 21 are spaced apart from each other in the lateral direction. The upper end of the insulating support 8 is suspended from the cathode flange 4.

[0123] A cluster plate 100 is connected to the transverse inner side of the insulating support portion 8. The contour of the transverse inner side of the lower end of the insulating support portion 8 is set to limit the extent to which the cathode flange 4 and the cluster plate 100 are exposed in the plasma formation space 2a. The insulating support portion 8 functions as an electrode insulating cover.

[0124] The cathode flange 4 and the spray plate 100 are spaced apart vertically and are arranged approximately parallel to each other. As a result, a gas supply space 2c is formed between the cathode flange 4 and the spray plate 100.

[0125] The lower surface 4c of the cathode flange 4 is opposite to the cluster plate 100. A gas inlet 7a is provided through the cathode flange 4.

[0126] In addition, a gas inlet pipe 7 is provided between the process gas supply unit 7b located outside the processing chamber 3 and the gas inlet 7a.

[0127] One end of the gas inlet pipe 7 is connected to the gas inlet port 7a. The other end of the gas inlet pipe 7 is connected to the process gas supply unit 7b.

[0128] The gas inlet pipe 7 penetrates the shield. Process gas (process gas) is supplied from the process gas supply section 7b to the gas supply space 2c through the gas inlet pipe 7.

[0129] The gas supply space 2c functions as a space to stabilize the gas flow, gas composition, and gas pressure of the introduced process gas.

[0130] As will be described later, a plurality of gas ejection ports 102 and hollow cathode slits 110 are formed on the cluster plate 100.

[0131] The process gas introduced into the gas supply space 2c is ejected from the gas outlet 102 into the plasma forming space 2a inside the vacuum chamber 2.

[0132] The cathode flange 4 and the shower plate 100 are both constructed of conductive material. Alternatively, a shielding cover may be provided around the cathode flange 4, covering it. In this case, the shielding cover does not contact the cathode flange 4. The shielding cover is configured to be electrically connected to the vacuum chamber 2.

[0133] A high-frequency power supply 9 located outside the vacuum chamber 2 is connected to the cathode flange 4 via a matching box 12.

[0134] Matching box 12 is mounted on the shielding cover.

[0135] The cathode flange 4 and the cluster plate 100 constitute the cathode electrode.

[0136] The vacuum chamber 2 is grounded via a shield. The lower periphery of the shield can be mounted to connect with the outer periphery of the mounting flange 21.

[0137] <Base 15>

[0138] The base 15 is a plate-shaped component with a flat surface. The substrate 10 is placed on the upper surface of the base 15. The base 15 is formed such that the normal direction of the substrate 10 is parallel to the axis of the support 16.

[0139] The base 15 may have a built-in heater 14. The base 15 can heat and regulate the temperature of the substrate 10 placed on it through the heater 14.

[0140] The base 15 functions as a grounding electrode, i.e., an anode electrode. Therefore, the base 15 is formed of a conductive metal or the like. For example, the base 15 is formed of aluminum, an aluminum alloy, or the like.

[0141] The base 15 is a component after the aluminum or aluminum alloy surface has been treated with acid-resistant aluminum treatment.

[0142] When the substrate 10 is disposed on the base 15, the substrate 10 and the cluster plate 100 are arranged in parallel with each other close to one another.

[0143] The upper surface of the base 15 remains parallel to the upper surface 21a of the mounting flange 21. Even when the height of the upper surface of the base 15 changes due to the vertical movement of the lifting drive unit 16A, it also remains parallel to the upper surface 21a of the mounting flange 21.

[0144] When process gas is ejected from gas inlet 7a with substrate 10 disposed on base 15, the process gas is supplied to gas supply space 2c. The process gas supplied to gas supply space 2c is supplied to plasma formation space 2a above processing surface 10a of substrate 10 via cluster plate 100.

[0145] The base 15 and the substrate 10 are heated by a heater 14 inside the base 15. As a result, the temperature of the substrate 10 is adjusted to a predetermined temperature.

[0146] The heater 14 is connected to a power source 14b outside the vacuum chamber 2 via a heating wire 14a, which is inserted into a through hole formed approximately at the center of the base 15 and on the support column 16. The heating wire protrudes downward from the back of the approximately central portion of the base 15 as viewed from the vertical direction. The power source 14b regulates the temperature of the base 15 and the substrate 10 according to the power supplied to the heater 14.

[0147] A substrate insulating cover may be provided on the upper surface of the base 15, adjacent to the lateral outer side of the substrate 10. The substrate insulating cover surrounds the circumference of the substrate 10. The substrate insulating cover is disposed around the entire circumference of the substrate 10. The height of the substrate insulating cover may protrude upwards beyond the processed surface 10a of the substrate 10. For example, the height of the substrate insulating cover may be the same as the height of the processed surface 10a of the substrate 10. The height of the substrate insulating cover may be lower than the height of the processed surface 10a of the substrate 10.

[0148] <Gate Valve 26a>

[0149] A transfer-out and transfer-in section 26 (transfer-out and transfer-in port) is formed on the side wall 24 of the vacuum chamber 2. The transfer-out and transfer-in section 26 is used for transferring out or transferring in the substrate 10.

[0150] A valve 26a for opening and closing the loading / unloading section 26 is provided on the outer surface of the side wall 24 of the vacuum chamber 2. The valve 26a is, for example, capable of sliding in the vertical direction.

[0151] When the valve 26a slides downward (towards the bottom 11 of the vacuum chamber 2), the loading / unloading section 26 opens. In this state, the substrate 10 can be loaded or unloaded relative to the vacuum chamber 2.

[0152] On the other hand, when the valve 26a slides upward (towards the cathode flange 4), the loading / unloading section 26 closes. In this state, substrate 10 processing (film formation processing) can be performed.

[0153] <Detailed Structure of Cluster Plate 100>

[0154] Figure 2 This is a plan view showing the configuration of the gas ejection outlets in the cluster plate of the plasma processing apparatus according to this embodiment. Figure 3 This is a perspective view of the cluster plate of the plasma processing apparatus according to this embodiment, and is a three-dimensional view showing the gas flow path and the hollow cathode slit.

[0155] Multiple gas flow paths 101 are formed on the cluster plate 100, which are connected in the thickness direction from the gas supply surface 100b to the plasma forming surface 100a.

[0156] A portion of the gas flow path 101 is a gas outlet 102. The gas outlet 102 opens on the plasma forming surface 100a. (As shown...) Figure 2 As shown, multiple gas nozzles 102 are equally arranged on the plasma forming surface 100a of the cluster plate 100 when viewed from a planar perspective. In other words, among the multiple gas nozzles 102, the distance between two adjacent gas nozzles 102 is equal on the entire plasma forming surface 100a when viewed from above. Here, the "two adjacent gas nozzles 102" can also be referred to as the "closest gas nozzle 102". That is, two adjacent gas nozzles 102 are separated by an equal distance. The arrangement interval of the gas nozzles 102, that is, the spacing, is set to be equal on the entire surface of the plasma forming surface 100a.

[0157] In this embodiment, each of the plurality of gas nozzles 102 is positioned at a vertex of an equilateral triangle arranged without gaps on the plasma forming surface 100a. In other words, the line connecting two adjacent gas nozzles 102 forms one side of the equilateral triangle. That is, the angle between two sides of the three-sided equilateral triangle is 60°. Furthermore, the arrangement of the plurality of gas nozzles 102 includes: a first arrangement in which the plurality of gas nozzles 102 are arranged in a straight line; and a second arrangement inclined toward the first arrangement and in which the plurality of gas nozzles 102 are arranged in a straight line. The first and second arrangements are inclined at 60° or 120°.

[0158] Here, in the equilateral triangle where the gas nozzle 102 is located, Figure 2 The edge extending longitudinally along the paper surface is parallel to the longitudinal edge of the short side of the outline of the plasma forming surface 100a.

[0159] Multiple gas ejector ports 102 are located within the hollow cathode slit 110 formed on the plasma forming surface 100a. That is, none of the gas ejector ports 102 are formed to open directly onto the plasma forming surface 100a and are located outside the hollow cathode slit 110. Furthermore, in Figure 2 In the diagram, the hollow cathode slit 110 is not shown; the configuration of the gas ejection outlet 102 is shown instead.

[0160] In the gas flow path 101, an orifice 102a is formed near the gas outlet 102, i.e., near the plasma formation space 2a. The orifice 102a controls the gas flow from the gas supply space 2c to the plasma formation space 2a. That is, the gas flow path 101 narrows near the gas outlet 102. In other words, a plurality of orifices 102a are formed on the shower plate 100. The length of the orifice 102a is set to be equal in any gas flow path 101. Thus, a plurality of orifices 102a are constructed such that the gas flow ejected from each of the plurality of gas outlets 102 is equal. The width and length of the orifice 102a are set according to the processing conditions prescribed for the plasma processing performed with the plasma processing apparatus 1.

[0161] Orifice 102a extends in the thickness direction of the shower plate 100. Orifice 102a is formed to connect with the hollow cathode slit 110. The lower end opening of orifice 102a forms a gas outlet 102. One orifice 102a is correspondingly formed on a gas flow path 101.

[0162] The hollow cathode slit 110 is a groove-shaped recess formed on the plasma forming surface 100a. Regarding the shape of the groove-shaped recess, the dimension of the hollow cathode slit 110 in the length direction 110L is longer than its dimension in the width direction 110W. Furthermore, as described later, the plurality of hollow cathode slits 110 are arranged to cover the entire surface of the plasma forming surface 100a. Therefore, the shape of the groove-shaped recess in the hollow cathode slit 110 is not limited to this embodiment. The dimensions in the width direction 110W and the length direction 110L can also be equal. For example, the shape of the hollow cathode slit 110 is set to achieve the following two points.

[0163] • It can exert the hollow cathode effect equally on the entire surface of the plasma forming surface 100a.

[0164] • No abnormal discharge is generated on the entire surface of the plasma forming surface 100a.

[0165] The location of the opening of the gas ejection port 102 within the hollow cathode slit 110 is described. For example... Figure 3As shown, the opening is located at the center of the width direction 110W in the top surface 111 of the hollow cathode slit 110. That is, as... Figure 3 As shown, the gas outlet 102 opens on the top surface 111 at the center between the sidewalls 112 that extend along the length direction 110L (length direction) of the hollow cathode slit 110 and are opposite to each other.

[0166] Furthermore, such as Figure 3 As shown, the opening positions of the gas ejection port 102 within the hollow cathode slit 110 are spaced at approximately equal intervals along the length direction 110L on the top surface 111 of the hollow cathode slit 110.

[0167] Furthermore, preferably, the opening position of the gas ejector 102 is prioritized over the configuration of the hollow cathode slit 110 in the plasma forming surface 100a for the uniformity of gas supply in the plasma forming surface 100a. Therefore, as long as the opening is in the hollow cathode slit 110, the opening position of the gas ejector 102 can also adopt a structure other than the above configuration.

[0168] like Figure 3 As shown, the top surface 111 of the hollow cathode slit 110 can also be inclined towards the center of the width direction 110W on both sides. That is, in the top surface 111, the center of the width direction 110W is the uppermost position along the length direction 110L. The cross-sectional shape of the hollow cathode slit 110 along the width direction 110W can be pentagonal. In the hollow cathode slit 110 with a pentagonal cross-sectional shape in the width direction 110W, preferably, the gas ejection outlet 102 opens at the apex that is the uppermost position.

[0169] Figure 4 This is a perspective view of the cluster plate of the plasma processing apparatus according to this embodiment, and a perspective view showing other examples of gas flow paths and hollow cathode slits.

[0170] and Figure 3 The structures shown are different, such as Figure 4 As shown, the top surface 111 of the hollow cathode slit 110 can also be a plane parallel to the plasma forming surface 100a. That is, the center of the top surface 111 in the width direction 110W is the uppermost position along the length direction 110L. The cross-sectional shape of the hollow cathode slit 110 in the width direction 110W can be quadrilateral. In this case, it is sufficient that the gas outlet 102 opens on the upper side of the quadrilateral, which is substantially parallel to the plasma forming surface 100a. Furthermore, preferably, the gas outlet 102 opens at the center of the upper side of the quadrilateral in the width direction 110W, but the position of the gas outlet 102 can also be slightly offset in the width direction 110W.

[0171] However, in Figure 3 , Figure 4 In either case, a single gas outlet 102 is formed in the width direction 110W of the hollow cathode slit 110. The gas outlets 102 are configured to have a uniform formation density in the length direction 110L of the hollow cathode slit. That is, it is not desirable to form multiple gas outlets 102 in the width direction 110W of the hollow cathode slit. This is to ensure that the amount of gas ejected into the hollow cathode slit 110 is uniform in both the width direction 110W and the length direction 110L.

[0172] Figure 5 This is a plan view showing the opening of the hollow cathode slit and the gas ejection outlet in the cluster plate of the plasma processing apparatus according to this embodiment.

[0173] The hollow cathode slit 110 has an opening 113, which has a defined shape.

[0174] like Figure 5 As shown, the opening 113 can have a rectangular shape when viewed in a plane. The long sides of the opening 113 are arranged parallel to each other.

[0175] The opening 113 has a dimension of equal width 110W. That is, the opening 113 has a shape corresponding to the distance between the sidewalls 112 that extend in the length direction 110L and are parallel to each other.

[0176] like Figure 3 , Figure 4 As shown, the depth 110D of the hollow cathode slit 110 is uniform along the length direction 110L. That is, the dimension from the top surface 111 of the hollow cathode slit 110 to the opening 113 is uniform along the length direction 110L. Basically, in a hollow cathode slit 110, the depth 110D of the hollow cathode slit 110 is set to be uniform and does not change.

[0177] In addition, Figure 3 , Figure 4 In either case, the sidewalls 112 of the hollow cathode slit 110 in the width direction 110W are parallel to each other and parallel to the thickness direction of the cluster plate 100. Alternatively, the sidewalls 112 of the hollow cathode slit 110 in the width direction 110W may also be inclined from the top surface 111 toward the opening 113 in the thickness direction of the cluster plate 100 to increase the distance between them.

[0178] Figure 6 This is another example showing the opening of the hollow cathode slit in the cluster plate of the plasma processing apparatus according to this embodiment, as well as a plan view of the gas ejection outlet. Figure 7These are other examples showing the opening of the hollow cathode slit in the cluster plate of the plasma processing apparatus according to this embodiment, and a plan view of the gas ejection outlet. For example... Figure 6 As shown, opening 113 can have a rounded rectangular shape when viewed in a plane. For example... Figure 7 As shown, the opening 113 can have an oblong shape when viewed in a plane.

[0179] Figure 8 This is a perspective view showing a hollow cathode slit in the vicinity of the edge region of the plasma processing apparatus according to this embodiment. Figure 9 This is a perspective view showing a hollow cathode slit in the vicinity of the central region of the cluster plate of the plasma processing apparatus according to this embodiment.

[0180] like Figure 8 As shown, a plurality of hollow cathode slits 110 are formed to cover the entire area of ​​the plasma forming surface 100a. Here, "a plurality of hollow cathode slits 110 cover the entire area of ​​the plasma forming surface 100a" means that the spacing between the parallel adjacent hollow cathode slits 110 is equal to the spacing between the gas ejection outlets 102, and the spacing between the hollow cathode slits 110 remains unchanged throughout the entire area of ​​the plasma forming surface 100a.

[0181] Alternatively, "multiple hollow cathode slits 110 covering the entire area of ​​the plasma forming surface 100a" means that there are no locations on the plasma forming surface 100a of the cluster plate 100 where the gas flowing from the center to the edge of the plasma forming surface 100a does not traverse the hollow cathode slits 110. Here, in the plasma forming surface 100a of the cluster plate 100, if the gas flowing from its center to its edge does not traverse the hollow cathode slits 110, it may also have locations that run longitudinally through it in a local area.

[0182] Multiple hollow cathode slits 110 are arranged in a manner that covers the plasma forming surface 100a and does not intersect with each other.

[0183] "Does not intersect with each other" means that the hollow cathode slit 110, as Figure 8 As shown, the hollow cathode slits 110 adjacent to each other in the width direction 110W are arranged in a manner that is substantially parallel to each other in the length direction.

[0184] Furthermore, the plurality of hollow cathode slits 110 are divided from each other without intersecting each other throughout the entire region of the plasma forming surface 100a. That is, each of the plurality of hollow cathode slits 110 is formed as a straight line on the entire surface of the plasma forming surface 100a. Even when the lengths of the straight hollow cathode slits 110 are different, the plurality of hollow cathode slits 110 are arranged adjacent to each other in parallel.

[0185] That is, such as Figure 9 As shown, when multiple hollow cathode slits 110 extend in different length directions, the hollow cathode slits 110 do not intersect, and the hollow cathode slits 110 are divided into all parts that maintain a straight line shape.

[0186] For each circumferential region that divides the depth setting area and the depth setting area circumferentially, the orientation of the hollow cathode slit 110 is set. Here, circumferential refers to the direction around (outer periphery) of the central region R01, which will be described later.

[0187] <Depth setting area, circumferential area>

[0188] The following section explains the depth setting area and the circumferential area.

[0189] Figure 10 This is a plan view showing multiple depth-defined regions of the hollow cathode slit in the cluster plate of the plasma processing apparatus according to this embodiment. Figure 11 This is a cross-sectional view showing each of the multiple depth-defined regions of the hollow cathode slit in the cluster plate of the plasma processing apparatus according to this embodiment.

[0190] In this embodiment, depth setting regions R01 to R20 are provided on the plasma forming surface 100a of the cluster plate 100. The depth setting regions R01 to R20 are respectively set in a ring shape from the center of the plasma forming surface 100a of the cluster plate 100 toward the periphery.

[0191] like Figure 10 , Figure 11 As shown, the depth setting regions R01 to R20 are roughly classified into two depth setting regions. The first depth setting region (first depth setting region) is the central region R01, which includes the center of the plasma forming surface 100a of the cluster plate 100. The second depth setting region (second depth setting region) consists of multiple depth setting regions from the region R02 located next to the central region R01 to the peripheral region R20 located at the edge of the plasma forming surface 100a.

[0192] Among the multiple depth setting regions R02 to R20, region R20 is the outermost region located on the cluster plate 100. In the following description, region R20 is sometimes referred to as edge region R20. Edge region R20 is adjacent to the edge of plasma forming surface 100a. In addition, the depth setting region is sometimes simply referred to as region. The regions indicated by the reference numerals R01 to R20 can also be referred to as the first region to the 20th region indicated by ordinal numbers.

[0193] In this embodiment, 20 depth setting regions R01 to R20 are set, but the number of regions is not limited to 20. Other setting numbers may also be used. If a uniform plasma density can be achieved in the entire region of the plasma forming surface 100a, the number of depth setting regions R01 to R20 is not limited.

[0194] The direction from the central region R01 located at the center of the plasma forming surface 100a toward the edge region R20 located at the periphery of the plasma forming surface 100a is sometimes referred to as "radial outer". The direction opposite to "radial outer" is sometimes referred to as "radial inner". Without distinguishing between "outer" and "inner", "radial outer" and "radial inner" are sometimes simply referred to as "radial".

[0195] For example, multiple depth setting regions R02 to R20 are located radially outward from the central region R01. Among the multiple depth setting regions R02 to R20, region R02 is located radially outward next to the central region R01. Region R19 is located radially inward next to the edge region R20.

[0196] The depth setting regions R01 to R20 are set such that the depth 110D of the hollow cathode slit 110 is different in the thickness direction of the cluster plate 100. Within each of the depth setting regions R01 to R20, the depth 110D of the hollow cathode slit 110 is set to be the same.

[0197] In the depth setting regions R01 to R20, the depth of the hollow cathode slit 110 is set to increase as the numbering increases from the center region R01 to the edge region R20 (R01 to R20). That is, the depth 110D of the hollow cathode slit 110 in the depth setting region R02, which is adjacent to the depth setting region R01 (center region), is greater than that in the depth setting region R01 (center region).

[0198] Compared to depth setting region R02, the depth 110D of the hollow cathode slit 110 in the adjacent depth setting region R03 on the radially outer side is larger. Similarly, as the region number (R03 to R17) increases from depth setting region R03 to depth setting region R17, the depth 110D of the hollow cathode slit 110 increases. Furthermore, compared to depth setting region R18, the depth 110D of the hollow cathode slit 110 in the adjacent depth setting region R19 on the radially outer side is larger. Compared to depth setting region R19, the depth 110D of the hollow cathode slit 110 in the adjacent depth setting region R20 on the radially outer side is larger.

[0199] In addition, such as Figure 10As shown, the depth setting regions R08 to R20 only include a portion of the annular shape. The depth setting regions R08 to R20 are constructed by shearing only a portion of the annular shape from the plasma forming surface 100a with a rectangular outline.

[0200] The outer contour shapes of the depth setting regions R01 to R20 are set along a straight line connecting the gas nozzle 102. Therefore, in this embodiment, the outer contour shapes of the depth setting regions R01 to R20 are set to hexagons. In particular, the outer contour shape of the central region R01 is set to a regular hexagon. That is, the outer contour shapes of the depth setting regions R01 to R20 are determined by the arrangement of the gas nozzle 102.

[0201] The hollow cathode slit 110 is configured along the multiple boundaries RR of the depth setting regions R01 to R20. In other words, the shapes of the multiple boundaries RR of the depth setting regions R01 to R20, that is, the outer contour shapes of the depth setting regions R01 to R20, are configured along the long side of the hollow cathode slit 110.

[0202] Each of the depth setting regions R02 to R20 has multiple circumferential regions. These multiple circumferential regions are divided circumferentially. For example, circumferential regions R03a to R03f, which are divided circumferentially, are formed in the depth setting region R03. Each of the circumferential regions R03a to R03f is set to have the same depth of the hollow cathode slit 110. Similarly, circumferential regions R06a to R06f, which are divided circumferentially, are formed in the depth setting region R06. Each of the circumferential regions R06a to R06f is set to have the same depth 110D of the hollow cathode slit 110.

[0203] Within each of the circumferential regions R02a to R20f, all hollow cathode slits 110 are arranged parallel to each other and facing the same direction. Simultaneously, within each of the circumferential regions R02a to R20f, all hollow cathode slits 110 are arranged parallel to the outer periphery of the circumferential regions R02a to R20f and facing the same direction.

[0204] For example, Figure 10 The depth setting region R03 shown has multiple circumferential regions R03a to R03f arranged in a counterclockwise order in the circumferential direction. Circumferential regions R03a to R03f are six regions into which the depth setting region R03 is divided. Circumferential regions R03a to R03f are divided by parallel lines parallel to the sides of the hexagon and boundaries Rab, Rbc, Rcd, Rde, Ref, and Rfa. Here, boundaries Rab, Rbc, Rcd, Rde, Ref, and Rfa are straight lines passing through the center of the plasma forming surface 100a.

[0205] exist Figure 10 In the circumferential region R03a shown at the center of the right side of the paper, the straight line that forms the outer boundary RR of the depth setting region R03 is... Figure 10 The paper extends longitudinally. Therefore, all the hollow cathode slits 110 arranged in the circumferential region R03a are parallel to each other and oriented towards the paper. Figure 10 The paper is arranged vertically.

[0206] exist Figure 10 In the circumferential region R03b, located on the upper right side of the paper, above the circumferential region R03a, the straight line that forms the outer perimeter boundary RR of the depth setting region R03 starts from... Figure 10 The paper extends from the center of the left-right direction to the right in a direction inclined downwards at 60° compared to the horizontal direction. Therefore, all the hollow cathode slits 110 arranged in the circumferential region R03b are parallel to each other, and from the center of the paper in the left-right direction, they extend downwards at 60° compared to the horizontal direction. Figure 10 The paper is arranged so that the center of the paper is tilted to the right at a 60° angle downwards from the horizontal direction.

[0207] exist Figure 10 In the circumferential region R03c, located to the left of the circumferential region R03b on the upper left side of the paper, the straight line that forms the outer perimeter boundary RR of the depth setting region R03 starts from... Figure 10 The paper extends from the center in the left-right direction to the left in a direction inclined downwards at 60° compared to the horizontal direction. Therefore, all the hollow cathode slits 110 arranged in the circumferential region R03c are parallel to each other, and from the center of the paper in the left-right direction to the left in a direction inclined downwards at 60° compared to the horizontal direction. Figure 10 The paper is arranged so that the center of the paper is tilted to the left at a 60° downward angle from the horizontal direction.

[0208] exist Figure 10 In the circumferential region R03d shown at the center of the vertical direction on the left side of the paper, the straight line that forms the outer perimeter boundary RR of the depth setting region R03 is... Figure 10 The paper extends longitudinally. Therefore, all the hollow cathode slits 110 arranged in the circumferential region R03d are parallel to each other and oriented towards the paper. Figure 10 The paper is arranged vertically.

[0209] exist Figure 10 In the circumferential region R03e shown at a position lower than the circumferential region R03d on the lower left side of the paper, the straight line that forms the outer perimeter boundary RR of the depth setting region R03 starts from... Figure 10 The paper extends from the center in the left-right direction to the left along a direction inclined upward at 60° compared to the horizontal direction. Therefore, all the hollow cathode slits 110 arranged in the circumferential region R03e are parallel to each other, and from the center of the paper in the left-right direction to the left, they extend upward at 60° compared to the horizontal direction. Figure 10The paper is arranged so that the center of the paper is tilted to the left at a 60° angle upwards from the horizontal direction.

[0210] exist Figure 10 In the circumferential region R03f, located on the lower right side of the paper, further to the right of the circumferential region R03e and lower than the circumferential region R03a, the straight line that forms the outer perimeter boundary RR of the depth setting region R03 starts from... Figure 10 The paper extends from the center in the left-right direction to the right in a direction inclined upward at 60° compared to the horizontal direction. Therefore, all the hollow cathode slits 110 arranged in the circumferential region R03f are parallel to each other, and from the center of the paper in the left-right direction to the right in a direction inclined upward at 60° compared to the horizontal direction. Figure 10 The paper is arranged so that the center of the paper is tilted to the right at a 60° angle upwards from the horizontal direction.

[0211] exist Figure 10 In each of the depth setting regions R02 and R04 to R07, excluding the depth setting region R03, circumferential regions R02a to R02f, R04a to R04f, R05a to R05f, R06a to R06f, and R07a to R07f are also set. In each of these circumferential regions, all the hollow cathode slits 110 are arranged parallel to each other along the outer peripheral boundary of the depth setting regions R02, R04 to R07.

[0212] Furthermore, the depth setting regions R08 to R20 do not have a hexagonal annular shape throughout, but rather a shape that is partially lacking in the annular shape. Similarly, circumferential regions R08b to R20f are also provided within the depth setting regions R08 to R20. Within each of the circumferential regions R08b to R20f, all the hollow cathode slits 110 are arranged parallel to each other along the outer peripheral boundary RR of the depth setting regions R08 to R20.

[0213] In the central region R01 of this embodiment, the hollow cathode slits 110 are parallel to each other and oriented towards Figure 10 The paper is arranged vertically.

[0214] In the central region R01, all the hollow cathode slits 110 are arranged parallel to each other along the outer perimeter RR of the central region R01. In other words, in the central region R01, if any side of the outer perimeter RR of a regular hexagon is selected, all the hollow cathode slits 110 in the central region R01 are arranged parallel to each other with the selected side.

[0215] In this embodiment, such as Figure 9As shown, the hollow cathode slits 110 in the central region R01 are arranged in a manner that runs longitudinally along the plane of the paper. In the central region R01 of this embodiment, all the hollow cathode slits 110 are arranged parallel to each other. Furthermore, the hollow cathode slits 110 in the central region R01 are parallel to the hollow cathode slits 110 in each of the circumferential regions R02a and R02d. In addition, in the central region R01, the hollow cathode slits 110 of the central region R01 can be arranged parallel to any one of the circumferential regions R02a to R02f adjacent to the depth setting region R02 of the central region R01.

[0216] The reason for this arrangement of the hollow cathode slits 110 in the central region R01 is that if the circumferential region were defined according to each outer perimeter RR of a regular hexagon in the central region R01, the length direction 110L of the straight hollow cathode slits 110 would become too short and undesirable. Furthermore, this is because all the hollow cathode slits 110 need to be arranged parallel to each other in the central region R01.

[0217] In other words, all the hollow cathode slits 110 in the central region R01 are arranged in the same direction as the hollow cathode slits 110 in the circumferential region R02a or circumferential region R02d adjacent to the depth setting region of the central region R01.

[0218] Furthermore, the outer peripheral boundaries RR of the multiple circumferential regions R02a to R20f have the same orientation in the circumferential direction. Specifically, in the depth setting region R02, there is a boundary Rab between the circumferential regions R02a and R02b that are adjacent to each other in the circumferential direction. In the depth setting region R03 that is radially adjacent to the outer side of the depth setting region R02, there is a boundary Rab between the circumferential regions R03a and R03b that are adjacent to each other in the circumferential direction. The boundary Rab in the depth setting region R02 coincides with the boundary Rab in the depth setting region R03.

[0219] Similarly, the boundary Rbc between circumferential regions R02b and R02c coincides with the boundary Rbc between circumferential regions R03b and R03c. The boundary Rcd between circumferential regions R02c and R02d coincides with the boundary Rcd between circumferential regions R03c and R03d. The boundary Rde between circumferential regions R02d and R02e coincides with the boundary Rde between circumferential regions R03d and R03e.

[0220] The boundary Ref between circumferential regions R02e and R02f coincides with the boundary Ref between circumferential regions R03e and R03f. The boundary Rfa between circumferential regions R02f and R02a coincides with the boundary Rfa between circumferential regions R03f and R03a.

[0221] Thus, in all depth setting areas R02 to R20, such as Figure 9 , Figure 10 As shown, the boundaries of adjacent circumferential regions coincide at corresponding positions in the circumferential direction.

[0222] In depth setting regions R02 to R20, multiple hollow cathode slits 110 in each of the multiple circumferentially adjacent regions are arranged parallel to each other in the same direction. For example, in the boundary RR between circumferential region R02a and circumferential region R03a, the hollow cathode slits 110 in depth setting region R02 and the hollow cathode slits 110 in depth setting region R03 are also arranged parallel to each other in the same direction.

[0223] In contrast, within each of the multiple depth setting regions R02 to R20, at the boundary of two adjacent circumferential regions, the hollow cathode slits 110 of one circumferential region and the hollow cathode slits 110 of the other circumferential region are arranged in a manner oriented in different directions from each other. For example, in the depth setting region R02, at the boundary Rab between the adjacent circumferential regions R02a and R02b, the hollow cathode slits 110 of circumferential region R02a and R02b are arranged as follows: Figure 9 They are arranged in different directions as shown. Similarly, in boundary Rbc, the extension direction of the hollow cathode slit 110 in circumferential region R02b is the same as the extension direction of the hollow cathode slit 110 in circumferential region R02c. Figure 9 They are tilted to each other in an angle of 60° or 120° as shown.

[0224] Here, in each of the multiple depth setting regions R02 to R20, at the boundary of two circumferential regions that are adjacent to each other in the circumferential direction, the end 115 of the hollow cathode slit 110 of one circumferential region and the end 115 of the hollow cathode slit 110 of the other circumferential region are arranged radially alternately.

[0225] In the boundary between two circumferentially adjacent regions, such as Figure 9 As shown, the ends 115 of the hollow cathode slit 110 in one circumferential region are configured to extend into another circumferential region and are not connected to each other.

[0226] That is, such as Figure 9 As shown, by configuring the ends 115 of the hollow cathode slits 110 on the boundaries of two circumferentially adjacent regions, the following effect can be achieved: The process gas flows radially outward from the center of the plasma formation space 2a along the plasma formation surface 100a. At this time, the configuration prevents the process gas from reaching the edge of the plasma formation surface 100a without crossing the hollow cathode slits 110 midway through its flow.

[0227] For example, the boundary Rbc between the circumferential regions R03b and R03c in the depth setting region R03 will be explained here. Figure 9 As shown, consider the case where the end 115 of a hollow cathode slit 110 located in a certain radial direction protrudes to the left of the circumferential region R03b more towards the circumferential region R03c than the boundary Rbc. In this case, within the circumferential region R03b, the end 115 of the hollow cathode slit 110 adjacent to it on the radially outer side is recessed to the right of the circumferential region R03b more towards the circumferential region R03b than the boundary Rbc.

[0228] Meanwhile, in the boundary Rbc, such as Figure 9 As shown, consider the case where the end 115 of a hollow cathode slit 110 located in a certain radial direction protrudes to the right from the circumferential region R03c, further towards the circumferential region R03b than the boundary Rbc. In this case, within the circumferential region R03c, the end 115 of the hollow cathode slit 110 adjacent to it on the radially outer side is recessed to the left of the circumferential region R03c, further towards the boundary Rbc.

[0229] Here, an end 115 protruding to the right from the circumferential region R03c, further towards the circumferential region R03b than the boundary Rbc, is provided on the hollow cathode slit 110. An end 115 protruding to the left from the circumferential region R03b, further towards the circumferential region R03c than the boundary Rbc, is also provided on the hollow cathode slit 110. The right-protruding ends 115 and the left-protruding ends 115 are positioned approximately equal in the circumferential direction.

[0230] That is, the right-protruding end 115 and the left-protruding end 115 are arranged on the same straight line radially toward the outer edge from the center of the plasma forming surface 100a.

[0231] Furthermore, the rightward-protruding ends 115 are all positioned at approximately equal circumferentially. That is, the ends 115, which are positioned differently in the radial direction and protrude to the right respectively, are all positioned on the same straight line radially outward from the center of the plasma forming surface 100a.

[0232] Furthermore, the leftward-protruding ends 115 are all positioned at approximately equal circumferentially. That is, the ends 115, which are positioned differently in the radial direction and protrude to the left respectively, are all positioned on the same straight line radially from the center of the plasma forming surface 100a toward the outer edge.

[0233] Furthermore, the rightward-retracting ends 115 are all positioned at approximately equal circumferentially. That is, the ends 115, which are positioned at different locations radially and retract to the right, are all positioned on the same straight line radially outward from the center of the plasma forming surface 100a.

[0234] Furthermore, the ends 115 that are recessed to the left are all positioned at approximately equal positions in the circumferential direction. That is, the ends 115 that are positioned differently in the radial direction and are recessed to the left are all positioned on the same straight line radially outward from the center of the plasma forming surface 100a.

[0235] That is, regarding the end 115 that protrudes or retracts in the circumferential direction, the corresponding ends in the depth setting areas R02 to R20 are respectively located approximately in a straight line in the radial direction.

[0236] That is, at the boundary between one circumferential region and another circumferential region, the hollow cathode slits 110 are arranged in a staggered manner, such that the ends 115 of the hollow cathode slits 110 are staggered. Therefore, the hollow cathode slits 110 are arranged in a manner that intersects with the flow of the processing gas flowing along the plasma forming surface 100a.

[0237] At this point, the end 115 of one hollow cathode slit 110 approaches the sidewall 112 of another hollow cathode slit, but does not contact it. That is, all the hollow cathode slits 110 maintain a straight line shape.

[0238] Figure 12 This is a cross-sectional view showing the boundary between two adjacent depth-defined regions in the cluster plate of the plasma processing apparatus according to this embodiment.

[0239] In this embodiment, within the boundary RR of two adjacent depth setting regions R01 to R20, as follows: Figure 12 The depth 110D is changed as shown. That is, the depth 110D of the hollow cathode slit 110 located in one depth setting region is different from the depth 110D of the hollow cathode slit 110 located in another depth setting region.

[0240] In the hollow cathode slit 110 of this embodiment, the positions of the plurality of gas outlets 102 in the thickness direction of the cluster plate 100 remain unchanged throughout the entire region of the plasma forming surface 100a. Therefore, in each of the depth setting regions R01 to R20, by changing the position of the opening 113 of the plasma forming surface 100a in the thickness direction of the cluster plate 100, the depth 110D of the hollow cathode slit 110 changes.

[0241] That is, such as Figure 12 As shown, relative to the boundary RR, which is closer Figure 12 The depth 110D at the location of the central region R01 shown on the left is closer to the boundary RR. Figure 12 The depth 110D is larger at the location of the edge region R20 shown on the right. Additionally, in Figure 12 The diagram schematically shows the change in depth 110D on both sides of the boundary RR, but in reality, it avoids the formation of abnormal discharge caused by steps and protrusions inside the hollow cathode slit 110.

[0242] That is, no plasma was formed on the plasma-forming surface 100a corresponding to the boundary RR. Figure 13 The step, etc., is shown at the location DD. At the position corresponding to the boundary RR, the shape of the plasma forming surface 100a changes smoothly. Here, location DD corresponds to the location that causes abnormal discharge.

[0243] Therefore, as Figure 11 As shown, a curved surface is formed on the plasma forming surface 100a. This curved surface has a concave shape, which gradually dips inward at the center of the plasma forming surface 100a, and the lower end profile of the cross-section in the thickness direction curves into an arc shape towards the outer periphery of the cluster plate 100. An opening 113 is formed on the plasma forming surface 100a having such a curved surface. Therefore, the depth 110D of the hollow cathode slit 110 is set to vary.

[0244] Specifically, the plasma-forming surface 100a, when viewed in a plane, is a rectangular outline with a side length of 1000 mm or more. In contrast, the depth of the recess in the thickness direction of the plasma-forming surface 100a is about a few mm.

[0245] <Manufacturing Method of Cluster Plate 100>

[0246] When manufacturing the cluster plate 100 according to this embodiment, a plate body with a uniform thickness is first prepared. Multiple gas flow paths 101, orifices 102a, gas ejection outlets 102, and multiple grooves for forming hollow cathode slits are formed on the plate body. At this time, the grooves are formed in a manner where the length of the orifices 102a in the thickness direction, the position of the gas ejection outlets 102 in the thickness direction, and the depth of the multiple grooves for forming hollow cathode slits are all uniform. Then, corresponding to a predetermined depth setting region R01 to R20, the plasma forming surface 100a is shaved or removed in a manner that deepens towards the center. This allows for the distribution of the depth 110D of the hollow cathode slits 110 with a predetermined state.

[0247] Next, the function of forming a film on the processed surface 10a of the substrate 10 using the plasma processing apparatus 1 will be explained.

[0248] <Plasma Treatment Process>

[0249] At the start of the process, the vacuum pump 28 is first driven to depressurize the vacuum chamber 2. While maintaining a vacuum within the vacuum chamber 2, the valve 26a is opened, and the substrate 10 is transferred from outside the vacuum chamber 2 into the plasma formation space 2a via the transfer-in / exit section 26. The substrate 10 is then placed on the base 15. Through a substrate insulating cover and other structures, the substrate 10 is positioned and aligned on the base 15.

[0250] After the substrate 10 is loaded, close the gate valve 26a (closing operation).

[0251] Before the substrate 10 is placed, the base 15 is located below the vacuum chamber 2. In addition, before the substrate 10 is placed, the base 15 is located below the transfer-in / extraction section 26.

[0252] That is, because the distance between the base 15 and the cluster plate 100 is relatively wide, the substrate 10 can be easily placed on the base 15 using a robotic arm (not shown).

[0253] After the substrate 10 is placed on the base 15, the lifting drive unit 16A is activated, causing the support column 16 to rise. The substrate 10, placed on the upwardly pushed base 15, also moves upward. Thus, the spacing between the cluster plate 100 and the substrate 10 is determined to a desired value to achieve the spacing required for proper film formation, and this spacing is maintained. The spacing between the plasma forming surface 100a of the cluster plate 100 and the processing surface 10a of the substrate 10 is the distance 100T between the plasma forming electrodes in the plasma forming space 2a (refer to...). Figure 18 The distance of 100T is set according to the processing conditions.

[0254] Then, the base 15 on which the substrate 10 is placed is heated by a heater 14 powered by a power source 14b via a heating wire 14a. The temperature of the substrate 10 is maintained at a predetermined temperature.

[0255] Subsequently, process gas is introduced from the process gas supply section 7b into the gas supply space 2c via the gas inlet pipe 7 and the gas inlet port 7a. Furthermore, process gas is ejected into the plasma formation space 2a, which serves as the film formation space, via the gas outlet 102 of the cluster plate 100 and the hollow cathode slit 110.

[0256] Figure 14 This is a cross-sectional view showing the plasma formation state in the cluster plate of the plasma processing apparatus according to this embodiment.

[0257] Next, the high-frequency power supply 9 is turned on to apply high-frequency power to the cathode flange 4.

[0258] Therefore, a high-frequency current flows from the surface of the cathode flange 4 along the surface of the cluster plate 100, generating a discharge between the cluster plate 100 and the base 15. Furthermore, plasma is generated between the cluster plate 100 and the processed surface 10a of the substrate 10.

[0259] At the same time, such as Figure 14 As shown, inside the hollow cathode slit 110, plasma is generated at a higher plasma density than that of the flat plate electrode due to the hollow cathode effect.

[0260] The process gas is decomposed in the plasma thus generated to obtain a plasma-state process gas, which generates a vapor phase growth reaction on the processing surface 10a of the substrate 10, and a thin film is formed on the processing surface 10a.

[0261] The high-frequency current transmitted to the base 15 returns along the side wall 24 and the shield (return current).

[0262] In the plasma processing apparatus 1 according to this embodiment, the spacing between adjacent hollow cathode slits 110 is defined by the opening distribution of gas ejector ports 102. The spacing between two adjacent gas ejector ports 102 is set to be smaller than the spacing between the plasma forming surface 100a of the cluster plate 100 and the processing surface 10a of the substrate 10, i.e., the distance 100T between plasma forming electrodes. Therefore, process gas is uniformly supplied into the plasma forming space 2a, which serves as the film formation space. At the same time, through the hollow cathode effect, high plasma density, high free radical density, and high electron density can be achieved.

[0263] In particular, a cavity-type structure is known in which the opening of the gas flow path toward the plasma forming surface 100a is enlarged for each of a plurality of gas flow paths. A hollow cathode effect is obtained in this structure. Even compared to such conventional structures, this embodiment not only achieves a hollow cathode effect but also realizes high plasma density, high radical density, and high electron density. More suitable plasma processing characteristics and film formation characteristics can be obtained.

[0264] Furthermore, in the plasma processing apparatus 1 according to this embodiment, the distribution of the depth 110D of the hollow cathode slit 110 is set to be greater at the outer periphery than at the center, according to the depth setting regions R01 to R20. Normally, the plasma density, free radical density, and electron density are smaller at the outer periphery, but according to this embodiment, they can be uniformly distributed in the radial direction of the plasma forming surface 100a.

[0265] Here, if the depth 110D of the hollow cathode slit 110 is large (deep), the electron density becomes higher. This is because the internal volume of the hollow cathode slit 110 per unit length increases. When the width dimension 110W of the hollow cathode slit 110 is large, the electron density becomes higher.

[0266] Therefore, it is easy to achieve a uniform distribution of plasma processing characteristics, that is, a uniform film thickness distribution during film formation. Moreover, based on the composition of the film formed, it is easy to control and suppress variations in characteristic distribution.

[0267] Furthermore, the structure of this embodiment is similar to that of... Figure 15 Unlike the structure shown, which has corners within the curved hollow cathode slits when viewed in a plane, the hollow cathode slits 110 in this embodiment are curved. All hollow cathode slits 110 are formed by straight lines. The multiple hollow cathode slits 110 do not intersect each other. In this state, the multiple hollow cathode slits 110 are arranged to cover the entire area of ​​the plasma forming surface 100a of the cluster plate 100. Therefore, no protrusions, bumps, steps, or other parts that could cause abnormal discharges are formed within the slits where the hollow cathode effect occurs. Therefore, the generation of abnormal discharges that adversely affect film formation characteristics can be avoided. Consequently, film formation characteristics are not degraded.

[0268] Furthermore, according to the depth setting regions R01 to R20, the depth 110D of the hollow cathode slit 110 is set to increase from the center to the outer periphery along the radial direction of the plasma forming surface 100a. As a result, with the plasma density, free radical density, and electron density uniformly set, it is easy to control the plasma density, free radical density, and electron density to the desired state.

[0269] In this embodiment, corresponding to the depth setting regions R01 to R20, the plasma forming surface 100a is machined such that the center of the plasma forming surface 100a is recessed compared to the outer periphery. With this machining alone, the depth 110D of the hollow cathode slit 110 can be formed to vary radially along the plasma forming surface 100a. Therefore, the depth 110D of the hollow cathode slit 110 can be easily set with good machining accuracy.

[0270] Simultaneously, a structure can be obtained in which the depth-defined regions R01 to R20 do not intersect with the hollow cathode slit 110. Therefore, without forming the region DD that could cause abnormal discharge, high plasma density, high free radical density, and high electron density can be uniformly achieved.

[0271] Meanwhile, in the plasma processing apparatus 1 according to this embodiment, the composition of the film formed can be easily controlled to suppress variations in characteristic distribution.

[0272] Here, it is possible to perform film formation for both types of films where the characteristics change significantly due to plasma formation power and types where the characteristics change significantly due to the 100T distance between plasma-formed electrodes. Plasma processing can be performed in a manner that avoids the differences in characteristics between the two.

[0273] The composition of the film deposited on the substrate 10 varies depending on the process gas supplied to the plasma formation space 2a, but at the same time, the processing characteristics also change depending on the type of gas. That is, when different compositions of film are deposited, the behavior in response to changes in electrical current and inter-electrode distance, especially the sensitivity, changes.

[0274] In contrast, according to this embodiment, the density can be easily varied while maintaining the uniformity of the density distribution through the depth setting regions R01 to R20. Therefore, even with variations in plasma power, the characteristic distribution along the plasma formation surface 100a can be maintained. Furthermore, the characteristic distribution along the plasma formation surface 100a can be maintained when the distance 100T between the plasma formation electrodes is changed. Therefore, the characteristics caused by the change in the distance between the electrodes can be effectively utilized for film formation.

[0275] Therefore, a plasma processing apparatus 1 equipped with a cluster plate 100 is provided, which can achieve good film thickness distribution without abnormal discharge by using a hollow cathode slit 110 with high plasma density.

[0276] Figure 16 This is a cross-sectional view showing another example of the depth setting region of the hollow cathode slit in the cluster plate of the plasma processing apparatus according to this embodiment.

[0277] Furthermore, with Figure 11 Compared to the example shown, in Figure 16 In the example shown, corresponding to the depth setting regions R01 to R20, the plasma forming surface 100a is processed such that the center is more concave than the outer periphery. The plasma forming surface 100a can be formed in such a way that the depth 110D of the hollow cathode slit 110 varies considerably along the radial direction of the plasma forming surface 100a.

[0278] Therefore, even when forming a film with a large difference in film thickness distribution in the radial direction of the plasma forming surface 100a, it is possible to achieve film formation with a uniform film thickness distribution.

[0279] <Second Implementation Method>

[0280] The cluster plate and plasma processing apparatus according to the second embodiment of the present invention will now be described with reference to the accompanying drawings.

[0281] Figure 17 This is a cross-sectional view showing the depth setting area of ​​the hollow cathode slit in the cluster plate of the plasma processing apparatus according to this embodiment. Figure 18 This is a cross-sectional view showing the boundary between adjacent depth-setting regions in the cluster plate of the plasma processing apparatus according to this embodiment. This embodiment differs from the first embodiment described above in aspects related to the setting of the depth 110D of the hollow cathode slit 110. For structures other than those corresponding to the first embodiment described above, the same reference numerals are used, and their descriptions are omitted.

[0282] like Figure 17 , Figure 18 As shown, the plasma processing apparatus 1 according to this embodiment is formed such that the plasma forming surface 100a in the cluster plate 100 has a plane. And the plasma forming surface 100a is formed in such a way that the position of the gas outlet 102 in the thickness direction of the cluster plate 100 changes.

[0283] Therefore, the depth 110D of the hollow cathode slit 110 in the depth setting region R01 to R20 is set.

[0284] In this embodiment, within the boundary RR of two adjacent depth setting regions R01 to R20, as follows: Figure 18 The depth 110D is changed as shown. That is, the depth 110D of the hollow cathode slit 110 located in one depth setting region is different from the depth 110D of the hollow cathode slit 110 located in another depth setting region.

[0285] In this embodiment, the position of the opening 113 of the hollow cathode slit 110 in the thickness direction of the cluster plate 100 remains unchanged throughout the entire region of the plasma forming surface 100a. That is, the entire surface of the plasma forming surface 100a is planar.

[0286] In contrast, the position of the gas outlet 102 in the thickness direction of the cluster plate 100 is displaced in the thickness direction of the cluster plate 100 according to the depth setting regions R01 to R20 respectively. As a result, the depth 110D of the hollow cathode slit 110 changes.

[0287] Here, with the thickness of the cluster plate 100 set to be uniform, the shape of the gas flow path 101 in each of the depth setting regions R01 to R20 is changed. The gas flow path 101 is closer to the gas supply surface 100b than the orifice 102a. This gas flow path 101 varies according to the depth 110D of the hollow cathode slit 110.

[0288] That is, such as Figure 18 As shown, relative to the boundary RR, which is closer Figure 18 The depth 110D at the location of the central region R01 shown on the left is closer to the boundary RR. Figure 18 The depth 110D is larger at the location of the edge region R20 shown on the right. Additionally, in Figure 18 The diagram schematically shows the change in depth 110D on both sides of the boundary RR, but in reality, it avoids the formation of abnormal discharge caused by steps and protrusions inside the hollow cathode slit 110.

[0289] Here, as Figure 17 As shown, the top surface 111 of the plurality of hollow cathode slits 110 is formed along a spherical surface 100d that protrudes downward in a convex shape.

[0290] The spherical surface 100d is formed by connecting the gas ejection port 102 of the top surface 111 across a plurality of hollow cathode slits 110. The spherical surface 100d corresponds to the plasma forming surface 100a, which is a convex curved surface protruding upward as described in the first embodiment above. That is, the depth 110D of the hollow cathode slits 110 is set according to the position of the spherical surface 100d in the thickness direction of the cluster plate 100.

[0291] Here, no [structure] is formed on the top surface 111 of the hollow cathode slit 110. Figure 19 The steps shown are the parts DD that cause abnormal discharge. Furthermore, each of the multiple hollow cathode slits 110 does not cross the boundary RR of the depth-defined region. Therefore, no abnormal discharge is formed on the top surface 111 of a single hollow cathode slit 110. Figure 19 The steps shown.

[0292] The positions of the plurality of gas nozzles 102 vary in the thickness direction relative to the planar plasma forming surface 100a. Specifically, the positions of the gas nozzles 102 gradually approach each other from the center of the plasma forming surface 100a. Furthermore, the positions of the gas nozzles 102 are set to be spaced apart from the plasma forming surface 100a by curving along an arc-shaped surface toward the outer periphery of the cluster plate 100. Consequently, the depth 110D of the hollow cathode slit 110 is set to vary.

[0293] Specifically, the plasma forming surface 100a is a rectangular profile with a side length of 1000 mm or more when viewed in a plane. In contrast, the difference in distance between the planar plasma forming surface 100a and the gas ejection port 102 in the thickness direction is about a few mm.

[0294] In this embodiment, similar to the first embodiment, the depth 110D of the hollow cathode slit 110 is set corresponding to the depth setting regions R01 to R20. Furthermore, the plasma forming surface 100a is planar. Thus, as... Figure 18 As shown, the distance between the plasma forming electrodes is 100T, which can be maintained uniformly throughout the entire region of the plasma forming space 2a. Therefore, even for plasma processing that is sensitive to changes in the distance between the electrodes 100T, uniform plasma processing, such as film formation, can be performed throughout the entire region of the plasma forming surface 100a.

[0295] <Manufacturing Method of Cluster Plate 100>

[0296] When manufacturing the cluster plate 100 according to this embodiment, a plate body with a uniform thickness is prepared. Corresponding to a pre-defined depth setting region R01 to R20, a plurality of gas flow paths 101, orifices 102a, gas ejection outlets 102, and hollow cathode slits 110, each varying in the thickness direction of the cluster plate 100, are formed on the plate body. At this time, the lengths of the orifices 102a in the thickness direction are all formed to be uniform. Therefore, the depth 110D of the hollow cathode slits 110, with a predetermined state, can be achieved relative to the planar plasma forming surface 100a.

[0297] Figure 20 This is a cross-sectional view showing the plasma formation state in the cluster plate of the plasma processing apparatus according to this embodiment.

[0298] In this embodiment, if the high-frequency power supply 9 is activated to apply high-frequency power to the cathode flange 4, a discharge is generated between the cluster plate 100 and the base 15. Furthermore, plasma is generated between the cluster plate 100 and the processed surface 10a of the substrate 10.

[0299] At the same time, such as Figure 20 As shown, inside the hollow cathode slit 110, plasma is generated at a higher plasma density than that of the flat plate electrode due to the hollow cathode effect.

[0300] In this embodiment, the same effects as those in the embodiments described above can be achieved.

[0301] <Third Implementation Method>

[0302] The cluster plate and plasma processing apparatus according to the third embodiment of the present invention will now be described with reference to the accompanying drawings.

[0303] Figure 21 This is a plan view showing the configuration pattern of the gas ejection outlet of the cluster plate of the plasma processing apparatus according to this embodiment and the boundary configuration pattern of the depth setting area of ​​the hollow cathode slit.

[0304] This embodiment differs from the first and second embodiments described above in aspects related to the configuration pattern of the gas ejection outlet and the depth setting area. Other structural elements corresponding to those in the first and second embodiments described above are marked with the same reference numerals, and their descriptions are omitted.

[0305] In the plasma processing apparatus 1 according to this embodiment, such as Figure 21 As shown, a configuration pattern of gas nozzles 102 on the plasma forming surface 100a of the cluster plate 100 can be obtained. In this configuration pattern, the gas nozzles 102 are positioned at the vertices of equilateral triangles arranged without gaps on the plasma forming surface 100a. This structure is the same as in the embodiment described above. On the other hand, the orientation of the configuration pattern of the gas nozzles 102 is different from the orientation of the outline edge of the rectangular plasma forming surface 100a.

[0306] That is, regarding the equilateral triangle at the vertex of the gas nozzle 102, in Figure 21 The lower side of the equilateral triangle extending in the left-right direction is parallel to the length side of the outline of the plasma forming surface 100a.

[0307] like Figure 21 As shown, in the depth setting region of this embodiment, the boundary RR of the depth setting region is set such that the side of the equilateral triangle at the vertex of the gas ejection outlet 102 is parallel to the side of the hexagon of the depth setting region. At this time, the boundary RR of the depth setting region has a side parallel to the side of the outline of the plasma forming surface 100a along its length direction.

[0308] Furthermore, the width dimension of the depth setting region in this embodiment is set to be smaller than that in the first and second embodiments. That is, the number of divisions of the depth setting region in this embodiment is set to be less than that in the first and second embodiments. In addition, the boundaries RR of the depth setting region in this embodiment have approximately equal radial spacing. Moreover, depending on the plasma processing conditions, the boundaries RR of the depth setting region may have different radial spacing depending on their radial position.

[0309] In this embodiment, the same effects as those in the embodiments described above can be achieved.

[0310] <Fourth Implementation Method>

[0311] The following description, based on the accompanying drawings, will explain the cluster plate and plasma processing apparatus according to the fourth embodiment of the present invention.

[0312] Figure 22 This is a plan view showing the configuration pattern of the gas ejection outlet of the cluster plate of the plasma processing apparatus according to this embodiment and the boundary configuration pattern of the depth setting area of ​​the hollow cathode slit.

[0313] This embodiment differs from the third embodiment described above in aspects related to the configuration pattern of the gas ejector outlet and the depth setting area. Other structural elements corresponding to those in the third embodiment described above are marked with the same reference numerals, and their descriptions are omitted.

[0314] In the plasma processing apparatus 1 according to this embodiment, such as Figure 22 As shown, a configuration pattern of gas nozzles 102 on the plasma forming surface 100a of the cluster plate 100 can be obtained. In this configuration pattern, the gas nozzles 102 are positioned at the vertices of equilateral triangles arranged without gaps on the plasma forming surface 100a. This structure is the same as in the third embodiment. On the other hand, the orientation of the configuration pattern of the gas nozzles 102 relative to the outline edge of the rectangular plasma forming surface 100a is the same as in the first embodiment.

[0315] That is, regarding the equilateral triangle at the vertex of the gas nozzle 102, in Figure 22 The longitudinally extending edge is parallel to the longitudinally extending edge in the direction of the short side of the profile of the plasma forming surface 100a.

[0316] like Figure 22As shown, in the depth setting region of this embodiment, the boundary RR of the depth setting region is set such that the side of the equilateral triangle at the vertex of the gas ejector 102 is parallel to the side of the hexagon of the depth setting region. At this time, the boundary RR of the depth setting region has a side parallel to the side in the short side direction of the contour of the plasma forming surface 100a.

[0317] Furthermore, the width dimension of the depth setting region in this embodiment is set to be smaller than that in the first to third embodiments. That is, the number of divisions of the depth setting region in this embodiment is set to be less than that in the first to third embodiments. In addition, the boundaries RR of the depth setting region in this embodiment have approximately equal radial spacing. Furthermore, depending on the plasma processing conditions, the boundaries RR of the depth setting region may have different radial spacing depending on their radial position.

[0318] In this embodiment, the same effects as those in the embodiments described above can be achieved.

[0319] <Fifth Implementation Method>

[0320] The fifth embodiment of the present invention, including the cluster plate and plasma processing apparatus, will now be described with reference to the accompanying drawings.

[0321] Figure 23 This is a plan view showing the configuration pattern of the gas ejection outlet of the cluster plate of the plasma processing apparatus according to this embodiment and the boundary configuration pattern of the depth setting area of ​​the hollow cathode slit.

[0322] This embodiment differs from the fourth embodiment described above in aspects related to the configuration pattern of the gas ejection outlet and the depth setting area. Other structural elements corresponding to those in the fourth embodiment described above are marked with the same reference numerals, and their descriptions are omitted.

[0323] In the plasma processing apparatus 1 according to this embodiment, such as Figure 23 As shown, a configuration pattern of gas nozzles 102 on the plasma forming surface 100a of the cluster plate 100 can be obtained. In this configuration pattern, the gas nozzles 102 are positioned at the vertices of an equilateral triangle arranged without gaps on the plasma forming surface 100a. This structure is the same as in the fourth embodiment. In addition, the orientation of the configuration pattern of the gas nozzles 102 relative to the outline edge of the rectangular plasma forming surface 100a is also the same as in the fourth embodiment.

[0324] That is, regarding the equilateral triangle at the vertex of the gas nozzle 102, in Figure 23 The longitudinally extending edge is parallel to the longitudinally extending edge in the direction of the short side of the plasma forming surface 100a.

[0325] like Figure 23 As shown, in the depth setting region of this embodiment, the boundary RR of the depth setting region is set such that the side of the equilateral triangle at the vertex of the gas ejector 102 is parallel to the side of the hexagon of the depth setting region. At this time, the boundary RR of the depth setting region has a side parallel to the side in the short side direction of the contour of the plasma forming surface 100a.

[0326] Furthermore, the width dimension of the depth setting region in this embodiment is set to be smaller than that in the fourth embodiment. That is, the number of divisions of the depth setting region in this embodiment is set to be less than that in the fourth embodiment. Specifically, the boundary RR of the depth setting region is set only in the region near the corner of the outline of the plasma forming surface 100a.

[0327] Furthermore, the boundaries RR of the depth setting regions in the region near the corners of the contour of the plasma forming surface 100a may have approximately equal radial spacing. Moreover, depending on the plasma processing conditions, the boundaries RR of the depth setting regions may also have different radial spacing depending on their radial position.

[0328] In this embodiment, the same effects as those in the embodiments described above can be achieved.

[0329] <Sixth Implementation Method>

[0330] The following description, based on the accompanying drawings, describes the cluster plate and plasma processing apparatus according to the sixth embodiment of the present invention.

[0331] Figure 24 This is a plan view showing the configuration pattern of the gas ejection outlet of the cluster plate of the plasma processing apparatus according to this embodiment and the boundary configuration pattern of the depth setting area of ​​the hollow cathode slit.

[0332] This embodiment differs from the fourth and fifth embodiments described above in aspects related to the configuration pattern of the gas ejection outlet and the depth setting area. Other structural elements corresponding to those in the fourth and fifth embodiments described above are marked with the same reference numerals, and their descriptions are omitted.

[0333] In the plasma processing apparatus 1 according to this embodiment, such as Figure 24As shown, a configuration pattern of gas nozzles 102 on the plasma forming surface 100a of the cluster plate 100 can be obtained. In this configuration pattern, the gas nozzles 102 are positioned at the vertices of an equilateral triangle arranged without gaps on the plasma forming surface 100a. This structure is the same as in the fourth and fifth embodiments. In addition, the orientation of the configuration pattern of the gas nozzles 102 relative to the outline edge of the rectangular plasma forming surface 100a is also the same as in the fourth and fifth embodiments.

[0334] That is, regarding the equilateral triangle at the vertex of the gas nozzle 102, in Figure 23 The longitudinally extending edge is parallel to the longitudinally extending edge in the direction of the short side of the plasma forming surface 100a.

[0335] like Figure 24 As shown, in the depth setting region of this embodiment, the boundary RR of the depth setting region is set such that the equilateral triangle at the vertex of the gas nozzle 102 is parallel to the side of the hexagon of the depth setting region. At this time, the boundary RR of the depth setting region has a side parallel to the side in the direction of the shorter side of the contour of the plasma forming surface 100a. In a portion of the depth setting region of this embodiment, the side of the equilateral triangle at the vertex of the gas nozzle 102 is parallel to the side of the quadrilateral with the boundary RR. This quadrilateral is a rhombus.

[0336] Furthermore, the width dimension of the depth setting region in this embodiment is set to be approximately the same as that in the fourth embodiment. That is, the number of divisions of the depth setting region in this embodiment is set to be approximately the same as that in the fourth embodiment. Specifically, as in the fifth embodiment, a boundary RR of the depth setting region is provided near the corner of the contour of the plasma forming surface 100a. Furthermore, a boundary RR of the depth setting region with a quadrilateral contour and a boundary RR of the depth setting region with a hexagonal contour are provided near the central region R01.

[0337] Furthermore, the boundaries RR of the depth setting region in this embodiment can have approximately equal radial spacing. Additionally, depending on the plasma processing conditions, the boundaries RR of the depth setting region can also have different radial spacing depending on their radial position.

[0338] In this embodiment, the same effects as those in the embodiments described above can be achieved.

[0339] <Seventh Implementation Method>

[0340] The cluster plate and plasma processing apparatus according to the seventh embodiment of the present invention will now be described with reference to the accompanying drawings.

[0341] Figure 25 This is a plan view showing the configuration pattern of the gas ejection outlet of the cluster plate of the plasma processing apparatus according to this embodiment and the boundary configuration pattern of the depth setting area of ​​the hollow cathode slit.

[0342] This embodiment differs from the first to sixth embodiments described above in aspects related to the configuration pattern of the gas ejection outlet and the depth setting area. Other structural elements corresponding to those in the first to sixth embodiments described above are labeled with the same reference numerals, and their descriptions are omitted.

[0343] In the plasma processing apparatus 1 according to this embodiment, such as Figure 25 As shown, a configuration pattern of gas nozzles 102 on the plasma forming surface 100a of the cluster plate 100 can be obtained. This configuration pattern differs from the first to sixth embodiments in that the gas nozzles 102 are positioned at the vertices of a square that is arranged without gaps on the plasma forming surface 100a. This structure differs from the first to sixth embodiments. In other words, the line connecting two adjacent gas nozzles 102 forms one side of the square. That is, the angle formed by two orthogonal sides of the square with four sides is 90°. Furthermore, the arrangement of the plurality of gas nozzles 102 includes: a first arrangement in which the plurality of gas nozzles 102 are arranged in a straight line; and a second arrangement orthogonal to the first arrangement and in which the plurality of gas nozzles 102 are arranged in a straight line. The first and second arrangements are inclined at 90°. Furthermore, each of the first and second arrangements is inclined at 45° relative to the outline edge of the rectangular plasma forming surface 100a.

[0344] That is, the gas ejection outlet 102 is formed by the four sides of the square at the vertex, each relative to the... Figure 25 The edges of the contour of the plasma forming surface 100a extending longitudinally are all inclined at 45°.

[0345] like Figure 25 As shown, in the depth setting region of this embodiment, the boundary RR of the depth setting region is set such that the side of the square at the vertex where the gas nozzle 102 is located is parallel to the side of the quadrilateral of the depth setting region. At this time, the boundary RR of the depth setting region has a side inclined at 45° relative to the contour of the plasma forming surface 100a. Furthermore, a plurality of concentric squares are set along the boundary RR of the depth setting region of this embodiment. Each side of the plurality of squares is parallel to the side of the square at the vertex where the gas nozzle 102 is located.

[0346] Furthermore, the boundary RR of the depth setting region in this embodiment differs from that in the first to sixth embodiments, and is set to have approximately the same spacing. The number of divisions of the depth setting region in this embodiment is set to be the same as the number of divisions of the depth setting region in the sixth embodiment. Specifically, unlike the first to sixth embodiments, the boundary RR of the depth setting region with an equal radial distance is set throughout the entire region of the plasma forming surface 100a.

[0347] Furthermore, the boundaries RR of the depth setting region in this embodiment can have approximately equal radial spacing. Additionally, depending on the plasma processing conditions, the boundaries RR of the depth setting region can also have different radial spacing depending on their radial position.

[0348] In this embodiment, the same effects as those in the embodiments described above can be achieved.

[0349] <Eighth Implementation Method>

[0350] The cluster plate and plasma processing apparatus according to the eighth embodiment of the present invention will now be described with reference to the accompanying drawings.

[0351] Figure 26 This is a plan view showing the configuration pattern of the gas ejection outlet of the cluster plate of the plasma processing apparatus according to this embodiment and the boundary configuration pattern of the depth setting area of ​​the hollow cathode slit.

[0352] This embodiment differs from the first to seventh embodiments described above in aspects related to the configuration pattern of the gas ejection outlet and the depth setting area. Other structural elements corresponding to those in the first to seventh embodiments described above are labeled with the same reference numerals, and their descriptions are omitted.

[0353] In the plasma processing apparatus 1 according to this embodiment, such as Figure 26 As shown, a configuration pattern of gas ejector ports 102 on the plasma forming surface 100a of the cluster plate 100 can be obtained. This configuration pattern differs from that of the first to seventh embodiments, as multiple concentric circles are arranged at intervals. In addition, similar to the first to seventh embodiments, the center of the outline of the plasma forming surface 100a is set to coincide with the center of the circle on which the gas ejector ports 102 are arranged.

[0354] like Figure 26As shown, in the depth setting region of this embodiment, the boundary RR is a concentric circle corresponding to the concentrically arranged circles of the gas ejection outlet 102. Since the boundary RR of the depth setting region is circular, it does not coincide with the outline of the plasma forming surface 100a. Furthermore, the hollow cathode slit 110 inside the depth setting region of this embodiment is also formed as a plurality of circles concentrically arranged with respect to the boundary RR of the depth setting region. In this arrangement, the hollow cathode slit 110 does not intersect with the boundary RR of the depth setting region.

[0355] Furthermore, the boundary RR of the depth setting region in this embodiment is set to have approximately the same spacing distance as in the seventh embodiment. The number of divisions of the depth setting region in this embodiment is set to be less than the number of divisions of the depth setting region in the seventh embodiment.

[0356] Furthermore, the boundaries RR of the depth setting region in this embodiment can have approximately equal radial spacing. Additionally, depending on the plasma processing conditions, the boundaries RR of the depth setting region can also have different radial spacing depending on their radial position.

[0357] In this embodiment, the same effects as those in the embodiments described above can be achieved.

[0358] Furthermore, it can be configured as a structure formed by appropriately selecting and combining the various structures described in the above embodiments.

[0359] Furthermore, in the embodiments disclosed in this specification, an embodiment constructed from multiple elements may integrate those multiple elements; conversely, an embodiment constructed from a single element may be divided into multiple elements. Whether integrated or not, the configuration is sufficient to achieve the purpose of the invention.

[0360] The embodiments of the present invention will now be described.

[0361] Here, the cluster plate and plasma processing device of the present invention are used as specific examples, and experiments are conducted. Confirmation tests of the film-forming properties obtained through these experiments are explained.

[0362] <Experimental Example 1>

[0363] First, as Experimental Example 1, an increase confirmation test was conducted on the electron density on the cluster plate 100 with the hollow cathode slit 110 formed according to the present invention.

[0364] First, the change in electron density when the depth 110D of the hollow cathode slit 110 is varied is determined by simulation.

[0365] Here, as Figures 8-10As shown, experiments were conducted on the cluster plate 100 with the hollow cathode slit 110 formed thereon to confirm the change in electron density when the depth 110D of the hollow cathode slit 110 was varied. The items in Experiment Example 1 are shown below.

[0366] • Clustering plate dimensions: 1978mm × 1628mm

[0367] • Width dimension of the hollow cathode slit (110W): 5.7mm~6.7mm

[0368] Hollow cathode slit depth 110D: 3mm~8mm

[0369] • The spacing (pitch) of the multiple gas nozzles 102: an equilateral triangle with one side of 7mm.

[0370] • Distance between plasma-generating electrodes 100T: 18mm

[0371] • Power supply: 9kW

[0372] • High-frequency power frequency: 13.56MHz

[0373] • Pressure inside the vacuum chamber: 120 Pa

[0374] The results of Experiment Example 1 are shown as follows Figure 27 The "slit" in the middle.

[0375] Similarly, using a hole-type cluster plate that generates a hollow cathode effect, the changes in depth and electron density are calculated in the same way.

[0376] Here, in the hollow cathode-type cluster plate that generates a hollow cathode effect, the arrangement of multiple gas nozzles is set as an equilateral triangle with a side length of 7 mm, similar to the hollow cathode slit of the present invention. Multiple circular recesses are formed on the plasma-forming surface side, relative to the respective orifices of the multiple gas nozzles. Each of the multiple circular recesses is spaced apart. The diameter of each of the multiple circular recesses is the same as the diameter (5.7 mm to 6.7 mm) in the width direction of the hollow cathode slit of the present invention. This result is shown as follows: Figure 27 The "empty hole" in the text.

[0377] Such as Figure 27 As shown in the results, regarding the change in electron density when the depth 110D is varied, it can be seen that the change in electron density of the hollow cathode slit 110 (slit) of the present invention is greater than that of the hole type (hole).

[0378] <Experimental Example 2>

[0379] Next, as Experimental Example 2, based on the difference in electron density changes calculated in Experimental Example 1, we compare the degree of shape difference that occurs between the two types of shower plates in order to maintain in-plane homogeneity. Here, we use the conditions described above to make this comparison.

[0380] To achieve a uniform electron density distribution using a hole-type cluster plate that generates a hollow cathode effect, the following dimensions are required.

[0381] • Set the depth at the center of the cluster plate to the minimum of the above depths, 3.0 mm.

[0382] • Set the depth in the outer edge of the cluster plate to the largest of the above depths, 7.5 mm.

[0383] That is, the depth difference Δhole in the cluster plate that generates the hollow cathode effect needs to be set to 4.5mm.

[0384] In contrast, the case of using the cluster plate 100 with a hollow cathode slit 110 of the present invention will be described.

[0385] Consider the case where the depth 110D of the hollow cathode slit 110 in the center of the cluster plate 100 is set to a minimum of 3.0 mm. In this case, in order to achieve a uniform electron density distribution, the depth 110D of the hollow cathode slit 110 required to obtain the same uniform electron density in the outer edge of the same cluster plate 100 is calculated.

[0386] Here, in both the hollow cathode-generating cluster plate of the present invention and the cluster plate 100 of the present invention having a hollow cathode slit 110, in order to vary the depth, a cluster plate having a curved surface with a concave portion formed at the center of the plasma forming surface 100a is used.

[0387] As a result, from Figure 27 The results show that, in order to achieve the same electron density, the hollow cathode slit 110 needs a depth 110D of 4.5 mm. That is, the difference in depth 110D Δslit needs to be 3.5 mm.

[0388] In other words, it can be seen that the change in electron density relative to depth is greater in the slit type than in the hole type. Furthermore, when the plasma forming surface 100a is a curved structure, a 3.5mm bend in the Δslit is sufficient, while a 4.5mm bend is required in the Δhole. Therefore, it can be seen that the cluster plate 100 with the hollow cathode slit 110 of the present invention is a structure that can reduce the curvature of the plasma forming surface 100a of the cluster plate 100.

[0389] That is, in the cluster plate 100 of the present invention having a hollow cathode slit 110, compared with the hole-type cluster plate that generates a hollow cathode effect, the difference in the distance 100T between plasma forming electrodes along the plasma forming surface 100a can be reduced.

[0390] Similarly, it can be seen that even when a flat structure with hollow cathode slits 110 of different depths 110D is formed on a planar plasma forming surface 100a, the difference in depth, i.e., the change in the formation position of the gas ejector 102, is smaller than that of the cavitation type.

[0391] Furthermore, in cluster plates with a planar plasma-forming surface that does not exhibit a hollow cathode effect, the difference in electron density along the plasma-forming surface is further increased compared to hole-type clusters. This difference in electron density cannot be eliminated.

[0392] <Experimental Example 3>

[0393] Next, as Experiment 3, the parameter dependence in various types of cluster plates with different compositions was verified.

[0394] Here, as an example, we show the difference in the dependence of film formation rate and parameters on SiN (silicon nitride) and SiO (silicon oxide).

[0395] here, Figure 28 The film formation conditions for SiN and SiO are shown respectively.

[0396] In the deposition of SiN and SiO films, the change in deposition rate when the electrode spacing is varied by 100T is shown in the figure. Figure 29 middle. Figure 29 The variables shown are standardized.

[0397] Similarly, in the deposition of SiN and SiO films, the change in deposition rate when the RF power is varied as a parameter is shown in the figure. Figure 30 middle. Figure 30 The variables shown are standardized.

[0398] Here, RF power is the plasma formation power applied between the electrodes. As a film formation condition, RF power corresponds to changes in plasma density and electron density.

[0399] according to Figure 29Comparing the film formation rates of SiN and SiO, the slope of the change in film formation rate relative to the change in inter-electrode distance (vertical axis) is smaller for SiN than for SiO. In other words, the film formation rate of SiN is less dependent on the inter-electrode distance than that of SiO. Conversely, the film formation rate of SiO is more dependent on the inter-electrode distance than that of SiN.

[0400] according to Figure 30 Comparing the film formation rates of SiN and SiO, the slope of the change in film formation rate relative to the change in RF power (vertical axis) is smaller for SiO than for SiN. This means that the film formation rate of SiO is less dependent on RF power than that of SiN. Conversely, the film formation rate of SiN is more dependent on RF power than that of SiO.

[0401] That is, it can be seen that the film formation rate of SiN depends on the plasma density and electron density compared with that of SiO.

[0402] Here, based on Figure 29 The results and Figure 30 The results were studied. Specifically, in the film formation of SiN and SiO, similar to Experimental Examples 1 and 2, the effect of increasing the electron density by using a slit-type cluster plate 100 on the film formation rate was considered. Furthermore, the slit-type cluster plate 100 has a structure that bends the plasma formation surface 100a. Moreover, in this slit-type cluster plate 100, the depth 110D of the hollow cathode slit 110 on the outer periphery is deeper than that at the center.

[0403] Here, the depth 110D of the hollow cathode slit 110 is... Figure 10 The depth setting areas R01 to R20 shown are set in each depth setting area. Figure 31 The depth 110D of the hollow cathode slit 110 in the depth setting region R01 to R20 is shown.

[0404] Here, the depth setting areas R01 to R20 are shown as areas 1 to 19. Furthermore, since the depth setting areas R19 and R20 have the same depth 110D, they are shown as area 19.

[0405] Therefore, in the case of a cluster plate that bends the plasma forming surface 100a, the distance between the outer electrodes near the periphery is relatively close to the distance between the inner electrodes near the center 100T.

[0406] Similarly, based on Figure 29 The results and Figure 30 The results show the effect of increasing electron density on the film formation rate in SiN and SiO films by using a structure that bends the plasma surface and a hole-type cluster plate that makes the depth of holes on the outer periphery deeper than that on the center.

[0407] Similarly, as a comparison, we consider the effect of using a flat cluster plate with a flat plasma-forming surface that does not form voids or slits on the film formation rate in the deposition of SiN and SiO films.

[0408] In this case, such as Figure 32 As shown, the change in film deposition rate is the normalized change in the in-plane position of the film deposition rate in SiN film deposition, Δ for flat-plate SiN is 22.6%. Similarly, the normalized change in the in-plane position of the film deposition rate in SiO film deposition, Δ for flat-plate SiO, is 3.3%.

[0409] Here, as Figure 32 The following Figure 34 and Figure 35 The horizontal axis represents the substrate position (mm), such as Figure 33 As shown, the values ​​of each point on the diagonal of a rectangular glass substrate are displayed.

[0410] When using a cavitation-type cluster plate, such as Figure 34 As shown, the change in film deposition rate is the normalized change in film deposition rate at the in-plane location of SiN deposition, Δhole-SiN is 2.8%. That is, when using a hole-type clustering plate, compared to using a planar clustering plate, the change in film deposition rate at the in-plane location of SiN deposition can be significantly suppressed. When using a hole-type clustering plate, compared to using a planar clustering plate, the change in film deposition rate at the in-plane location of SiN deposition can be reduced by an order of magnitude.

[0411] Additionally, when using a cavity-type cluster plate, such as Figure 34 As shown, the change in film formation rate is the normalized change in film formation rate at the in-substrate position during SiO film formation, Δhole-SiO is 5.7%. When using a hole-type clustering plate, the change in film formation rate at the in-substrate position of SiO film formation was not suppressed compared to the case of using a flat-plate clustering plate.

[0412] In contrast, when using slit-type cluster plates, such as Figure 35As shown, the change in film deposition rate is the normalized change in film deposition rate at the in-plane position of SiN deposition, Δslit-SiN, which is 2.5%. That is, when using a slit-type clustering plate, the change in film deposition rate at the in-plane position of SiN deposition can be significantly suppressed compared to using a flat-type clustering plate. Simultaneously, when using a slit-type clustering plate, the change in film deposition rate at the in-plane position of SiN deposition can also be reduced compared to using a hole-type clustering plate.

[0413] Furthermore, when using slit-type cluster plates, such as Figure 35 As shown, the change in film formation rate is the normalized change in film formation rate at the in-substrate position during SiO film formation, Δslit-SiO is 2.0%. That is, when using a slit-type clustering plate, compared to using a flat-plate clustering plate, the change in film formation rate during SiO film formation at the in-substrate position can be suppressed. When using a slit-type clustering plate, compared to using a cavity-type clustering plate, the change in film formation rate during SiO film formation at the in-substrate position can be significantly reduced.

[0414] In other words, it can be seen that when using a slit-type cluster plate, in addition to the SiN variation Δslit-SiN, the SiO variation Δslit-SiO can also be suppressed to less than 3% at the same time and to the same extent.

[0415] This result needs to be examined.

[0416] By bending the plasma-forming surface 100a, the distance between the outer electrodes near the periphery 100T is relatively closer than the distance between the inner electrodes near the center. Therefore, the SiO film thickness distribution deteriorates in the hole-type plasma-forming ...

[0417] Furthermore, in structures where the position of the gas ejector 102 changes in the thickness direction, the aforementioned bending structure has almost no effect on SiO since the plasma forming surface is not bent.

[0418] In addition, Figure 32 , Figure 34 , Figure 35 The values ​​in the chart shown are used as data again in Figure 36 This is revealed in the text.

[0419] <Experimental Example 4>

[0420] Next, as Experiment 4, the suppression of abnormal discharge was confirmed.

[0421] In Experiment 4, a comparison was made between the generation of abnormal discharges in the following two cluster plates.

[0422] ·like Figures 8-10 As shown, the cluster plate 100 has only straight hollow cathode slits 110.

[0423] ·like Figure 15 As shown, hexagonal hollow cathode slits of different diameters are formed concentrically, and the hollow cathode slits are bent to form a cluster plate at the DD (corner) within the slits.

[0424] The conditions for supplying electricity, etc., are as follows.

[0425] • The spacing (pitch) of the multiple gas nozzles 102: an equilateral triangle with one side of 7mm.

[0426] • Frequency: 13.56MHz

[0427] • Power supply: 9kW

[0428] • Power supply: 13kW

[0429] In the straight hollow cathode slit 110, no abnormal discharge occurred regardless of which power was supplied. In contrast, abnormal discharge was observed under certain conditions in the cluster plate with partial DD formation.

[0430] The results show that in the cluster plate 100 of the present invention, which has only straight hollow cathode slits 110, the generation of abnormal discharge can be largely suppressed.

[0431] Furthermore, by changing the type of processing gas supplied, the generation of abnormal discharge was verified.

[0432] The conditions are shown below. Furthermore, the power conditions are the same as described above.

[0433] ·Ar only

[0434] ·SiH4, N2O, Ar

[0435] ·SiH4, NH3, N2

[0436] These results show that, regardless of the type of gas, the generation of abnormal discharge can be largely suppressed in the cluster plate 100 of the present invention, which has only straight hollow cathode slits 110.

[0437] Explanation of reference numerals in the attached figures

[0438] 1. Plasma processing device

[0439] 2a Plasma Formation Space

[0440] 2c gas supply space

[0441] 100 clusters of light

[0442] 100a Plasma Forming Surface

[0443] 100b Gas Supply Surface

[0444] 101 Gas Flow Path

[0445] 102 Gas ejection outlet

[0446] 102a orifice

[0447] 110 Hollow cathode slit

[0448] 110D Depth

[0449] R01~R20 Depth Setting Area

Claims

1. A cluster plate that uniformly supplies processing gas from a gas supply space to a plasma formation space within a chamber of a plasma processing apparatus, and serves as a cathode electrode disposed opposite to an anode electrode, the cluster plate comprising: The plasma forming surface is opposite to the anode electrode and faces the plasma forming space; A gas supply surface is located on the opposite side of the plasma forming surface and faces the gas supply space; Multiple gas flow paths are connected from the gas supply surface to the plasma forming surface in the thickness direction of the cluster plate; Multiple hollow cathode slits are formed on the plasma forming surface in such a way that they have depth in the thickness direction; as well as Multiple gas outlets are disposed inside each of the multiple hollow cathode slits, and the processing gas is supplied equally throughout the entire region of the plasma forming surface. The plurality of hollow cathode slits are arranged in a manner that covers the plasma-forming surface and does not intersect with each other. Each of the plurality of hollow cathode slits has an internal opening containing a plurality of gas flow paths. The plurality of gas outlets are arranged in a row along the length of each of the plurality of hollow cathode slits. The plurality of gas outlets, along the respective length directions of the plurality of hollow cathode slits, are capable of supplying the processing gas equally to each of the plurality of hollow cathode slits. The plasma forming surface has a central region, an edge region, and a plurality of depth-defined regions divided from each other along a direction from the central region toward the edge region, wherein the plurality of hollow cathode slits have the same depth in each of the plurality of depth-defined regions. Furthermore, in such a way that the depth of the plurality of hollow cathode slits increases radially outward from the central region toward the edge region, the depth of the plurality of hollow cathode slits located in one depth setting region is set differently from the depth of the plurality of hollow cathode slits located in the other depth setting region among two adjacent depth setting regions. The boundaries between two adjacent depth setting regions and the plurality of hollow cathode slits do not intersect each other.

2. The cluster-emitting plate according to claim 1, wherein, When viewed in a plane, the distance between two adjacent gas outlets among the plurality of gas outlets is set to be uniform.

3. The clustering plate according to claim 1 or 2, wherein, When viewed in a plane, each of the plurality of hollow cathode slits is formed to extend in a straight line.

4. The clustering plate according to claim 1 or 2, wherein, The long sides of two adjacent hollow cathode slits are parallel to each other.

5. The clustering plate according to claim 1 or 2, wherein, The boundaries of the two adjacent depth-defined regions are arranged along the long side of the hollow cathode slit.

6. The clustering plate according to claim 1 or 2, wherein, The depths of the plurality of hollow cathode slits in each of the plurality of depth setting regions are set such that the positions of the plurality of gas outlets in the thickness direction are equal and the plasma forming surface is curved.

7. The clustering plate according to claim 1 or 2, wherein, The depths of the plurality of hollow cathode slits in each of the plurality of depth setting regions are set such that the positions of the plurality of gas outlets in the thickness direction change and the plasma forming surface is planar.

8. The clustering plate according to claim 1 or 2, wherein, Each of the multiple depth-defined regions has multiple circumferential regions. Each of the plurality of circumferential regions is divided in the circumferential direction. In each of the plurality of circumferential regions, all of the plurality of hollow cathode slits are arranged in parallel and facing the same direction. The plurality of hollow cathode slits in the central region are each arranged parallel to and facing the same direction as the hollow cathode slits in any circumferential region of the depth setting region adjacent to the central region.

9. The clustering plate according to claim 8, wherein, In the boundary between two adjacent circumferential regions within each of the plurality of depth setting regions, the ends of the hollow cathode slits in one circumferential region are staggered with the ends of the hollow cathode slits in the other circumferential region.

10. The clustering plate according to claim 1 or 2, wherein, The plurality of gas flow paths are formed to extend from the gas outlet to the gas supply surface, and have a plurality of orifices corresponding one-to-one with the plurality of gas flow paths. In all of the plurality of gas flow paths, the lengths of the plurality of orifices in the thickness direction are equal to each other.

11. The clustering plate according to claim 1 or 2, wherein, When viewed in a plane, the distance between two adjacent gas outlets among the plurality of gas outlets is less than the distance between the two electrodes that sandwich the plasma forming space and form the plasma.

12. A plasma processing apparatus, comprising: Electrode flange connected to a high-frequency power supply; The chamber has side walls and a bottom; An insulating flange is disposed between the chamber and the electrode flange; The processing chamber has a plasma formation space surrounded by the chamber, the electrode flange, and the insulating flange; A support portion is housed within the processing chamber and for mounting a substrate having a processing surface; the support portion serves as an anode electrode. as well as The cluster-emitting plate according to claim 1 or 2, The cluster plate is positioned opposite the electrode flange at a distance from it, thus forming the gas supply space. The cluster plate is positioned opposite the support portion at a distance from it, thus forming the plasma formation space.

Images