Magnetron sputtering assembly and apparatus

Abstract

The embodiment of the present disclosure provides a magnetron sputtering combined device and equipment, the magnetron sputtering combined device includes a cylindrical target assembly and at least one planar target assembly;The cylindrical target assembly includes a rotating target provided with a hollow chamber and a plurality of first magnets arranged in the hollow chamber;The planar target assembly includes a fixed target provided with a receiving chamber at two sides and a second magnet arranged in the receiving chamber;Wherein, the planar target assembly is arranged along the circumference of the cylindrical target assembly, and the sputtering surface of the fixed target corresponds to the sputtering surface of the rotating target. Through the combination of the cylindrical target assembly and the planar target assembly, the utilization rate of the target material and the product two-side coating rate can be effectively improved.

Description

TECHNICAL FIELD

[0001] Embodiments of the present disclosure belong to the technical field of magnetron sputtering, and particularly relate to a magnetron sputtering combination device and equipment. BACKGROUND

[0002] At present, the magnetron sputtering technology has become one of the most important deposition film methods due to its excellent performance, and has the characteristics of simplicity, accurate control of process parameters and good film quality. However, the magnetron sputtering technology also has its own shortcomings, for example, in the actual production process, the utilization rate of the target material is relatively low, only about 20%; and the film deposition rate is relatively low, and the cooling time is relatively long. SUMMARY

[0003] Embodiments of the present disclosure aim to at least solve one of the technical problems existing in the prior art, and provide a magnetron sputtering combination device and equipment.

[0004] In one aspect, embodiments of the present disclosure provide a magnetron sputtering combination device, which comprises a columnar target material assembly and at least one planar target material assembly.

[0005] The columnar target material assembly comprises a rotating target material provided with a hollow chamber and a plurality of first magnets arranged in the hollow chamber.

[0006] The planar target material assembly comprises a fixed target material provided with a receiving chamber at two sides and a second magnet arranged in the receiving chamber; wherein,

[0007] The planar target material assembly is arranged along the circumference of the columnar target material assembly, and the sputtering surface of the fixed target material corresponds to the sputtering surface of the rotating target material.

[0008] Optionally, the magnetron sputtering combination device comprises a plurality of planar target material assemblies.

[0009] The plurality of planar target material assemblies are arranged at intervals along the circumference of the columnar target material assembly.

[0010] Optionally, the first magnets are arranged in a plurality.

[0011] Each of the first magnets is arranged symmetrically in the hollow chamber with the axis of the hollow chamber as a center line, so that the magnetic induction lines generated by each of the first magnets are parallel to the sputtering surface of the rotating target material, and the magnetic induction lines generated by each of the first magnets are uniformly distributed in the rotating target material.

[0012] Optionally, the first magnets are arranged in four.

[0013] The first magnetic pole and the second magnetic pole of the four first magnets are respectively located at the two ends of the rotating target material along the axial direction, and the polarities of the first magnetic pole and the second magnetic pole are opposite.

[0014] Optionally, the second magnet comprises a plurality of second sub-magnets.

[0015] The plurality of second sub-magnets are arranged along the axial direction of the accommodating chamber, and the axis of the plurality of second sub-magnets is parallel to the axis of the fixed target material, so that the magnetic field lines generated by each of the second sub-magnets are parallel to the sputtering surface of the fixed target material.

[0016] Optionally, the second magnet comprises three second sub-magnets.

[0017] The first magnetic pole and the second magnetic pole of the three second sub-magnets are respectively located at the two ends of the fixed target material along the axial direction, and the polarities of the first magnetic pole and the second magnetic pole of the second sub-magnet are opposite.

[0018] Optionally, the magnetron sputtering combined device further comprises a cooling body, and the hollow chamber further comprises the cooling body.

[0019] Optionally, the accommodating chamber further comprises the cooling body, and the back surface of the fixed target material is provided with a cooling chamber for accommodating the cooling body.

[0020] Optionally, the magnetron sputtering combined device further comprises a workbench for hanging a sputtered product.

[0021] The workbench is rotatably sleeved on the columnar target material assembly, and the rotation direction of the workbench is opposite to the rotation direction of the rotating target material of the columnar target material assembly.

[0022] In another aspect, the embodiments of the present disclosure provide a magnetron sputtering device comprising the magnetron sputtering combined device described above.

[0023] The magnetron sputtering combined device and the device of the embodiments of the present disclosure can effectively improve the utilization rate of the target material and the film coating rate by the combination of the columnar target material assembly and the planar target material assembly. BRIEF DESCRIPTION OF DRAWINGS

[0024] Figure 1 It is a schematic diagram of the overall structure of a magnetron sputtering combined device according to an embodiment of the present disclosure;

[0025] Figure 2 It is a top view of the magnetic field lines generated by a first magnet according to another embodiment of the present disclosure;

[0026] Figure 3 It is a sectional view of a columnar target material assembly according to another embodiment of the present disclosure;

[0027] Figure 4 It is a sectional view of a planar target material assembly according to another embodiment of the present disclosure;

[0028] Figure 5 A working frame for another embodiment of the present disclosure is shown in a schematic view of a structure outside a rotating target material. DETAILED DESCRIPTION

[0029] To enable those skilled in the art to better understand the technical solutions of the present disclosure, the present disclosure is further described in detail below in combination with the drawings and specific embodiments.

[0030] The inventor designs a magnetron sputtering combined device and equipment, which can make the plasma exist in a larger target surface range by combining the design of the target material and adjusting the magnetic field structure, realize uniform sputtering of the target surface, effectively improve the utilization rate of the target material, and solve the problems of low film deposition rate and long cooling time. The specific description of the magnetron sputtering combined device and equipment is as follows:

[0031] As shown in Figure 1 A magnetron sputtering combined device 100, the magnetron sputtering combined device 100 includes a cylindrical target material assembly 110 and at least one planar target material assembly 120. The cylindrical target material assembly 110 includes a rotating target material 112 provided with a hollow chamber 111 and a plurality of first magnets 113 arranged in the hollow chamber 111. The planar target material assembly 120 includes a detachable fixed target material 122 provided with a receiving chamber 121 on both sides, and a second magnet 123 arranged in the receiving chamber 121. Wherein, the planar target material assembly 120 is arranged along the circumference of the cylindrical target material assembly 110, and the sputtering surface of the fixed target material 122 corresponds to the sputtering surface of the rotating target material 112.

[0032] Specifically, as shown in Figure 1 and Figure 5 The cylindrical rotating target material 112 is located at the central position and can rotate around its axis, the cylindrical rotating target material 112 is provided with a hollow chamber 111 coaxial with it, and a plurality of first magnets 113 are arranged in the hollow chamber 111. The magnetic induction lines generated by the plurality of first magnets 113 can control the existence of the plasma in the target surface range of the cylindrical rotating target material 112, and realize uniform sputtering of the sputtering surface of the cylindrical rotating target material 112.

[0033] Further, at least one planar target assembly 120 is arranged along the circumferential direction of the rotating target 112. When there are multiple planar target assemblies 120, the multiple planar target assemblies 120 are arranged at intervals along the circumferential direction of the rotating target 112. The planar target assembly 120 comprises a fixed target 122, and two sides of the fixed target 122 are respectively provided with a receiving cavity 121 in which a second magnet 123 is arranged. The magnetic field lines generated by the second magnet 123 can control the plasma to exist in the target surface range of the fixed target 122, so as to realize uniform sputtering of the sputtering surface of the fixed target 122. The sputtering surface of the fixed target 122 corresponds to the sputtering surface of the rotating target 112.

[0034] As a specific application example, as shown in Figure 1 and Figure 5 , a rotatable working frame 300 is arranged outside the columnar target assembly 110. The working frame 300 is used for hanging a sputtered product 200 and is located between the columnar target assembly 110 and the planar target assembly 120. When the magnetron sputtering combined device 100 is in operation, the rotating target 112 rotates in the clockwise direction as shown in Figure 1 and Figure 5 , the working frame 300 rotates in the counterclockwise direction, and the working frame 300 drives the sputtered product 200 to rotate in the counterclockwise direction when the working frame 300 rotates in the counterclockwise direction. The sputtered product is sputtered and coated by the sputtering surface of the rotating target 112 and the sputtering surface of the fixed target 122. The rotating target 112 and the fixed target 122 arranged at intervals along the circumferential direction thereof can form multiple pairs of twin targets, so as to realize uniform coating of both sides of the sputtered product.

[0035] The magnetron sputtering combined device of the embodiment of the present disclosure can realize uniform coating of both sides of the sputtered product, improve the utilization rate of the target material, and improve the efficiency of the magnetron sputtering coating by arranging the columnar target assembly and the planar target assembly. The hollow cavity saves the sputtering surface space of the rotating target, so as to further improve the utilization rate of the target material, improve the number of sputtered products and the coating rate, and realize full-target sputtering.

[0036] As a specific example, as shown in Figures 1 to 3 , the first magnet 113 is arranged in a plurality of numbers. Each of the first magnets 113 is arranged symmetrically in the hollow cavity 111 with the axis of the hollow cavity 111 as the center line, so that the magnetic field lines generated by each of the first magnets 113 are parallel to the sputtering surface of the rotating target 112, and the magnetic field lines generated by each of the first magnets 113 are uniformly distributed in the rotating target 112.

[0037] As a specific example, as shown in Figures 1 to 3 , the second magnet 123 is arranged in a plurality of numbers. Each of the second magnets 123 is arranged symmetrically in the receiving cavity 121 with the axis of the receiving cavity 121 as the center line, so that the magnetic field lines generated by each of the second magnets 123 are parallel to the sputtering surface of the fixed target 122, and the magnetic field lines generated by each of the second magnets 123 are uniformly distributed in the fixed target 122.As shown, the first magnets 113 can be provided as four, which are symmetrically distributed in the hollow chamber 111 with the axis of the hollow chamber 111 as the center line. Each first magnet 113 is provided as long as the rotating target 112, for example, the first magnet 113 can be provided as long 5 cm, wide 5 cm, and high 100 cm. Of course, the first magnet can also be designed as other sizes according to the actual application, and the embodiment does not make specific limitations on this. The first and second magnetic poles of the four first magnets 113 are respectively located at the two ends of the rotating target 112 along the axial direction, and the polarities of the first and second magnetic poles are opposite. Figure 1 and Figure 5 As shown, the upper end of the first magnet 113 is provided as an N pole, and the lower end of the first magnet 113 is provided as an S pole. Alternatively, the upper end of the first magnet 113 can be provided as an S pole, and the lower end of the first magnet 113 is correspondingly provided as an N pole. The four first magnets 113 provided in the hollow chamber can generate magnetic induction lines as shown in Figure 2 The magnetic induction lines generated by the first magnet 113 are parallel to the sputtering surface of the rotating target 112, and the magnetic induction lines generated by the first magnet 113 are uniformly distributed on the rotating target 112. In this way, the plasma can exist in a larger target surface range, achieving uniform and full-target sputtering of the target surface, improving the utilization rate of the target material while also improving the efficiency of the film coating and shortening the film coating time.

[0038] Further, as shown in Figure 1 and Figure 4 The second magnet 123 includes a plurality of second sub-magnets (not labeled in the figure). The plurality of second sub-magnets are arranged in the axial direction of the accommodating chamber 121, and the axes of the plurality of second sub-magnets are parallel to the axis of the fixed target 122, so that the magnetic induction lines generated by each second sub-magnet are parallel to the sputtering surface of the fixed target 122.

[0039] As a specific example, as shown in Figure 1 and Figure 4 The second magnet 123 can be specifically provided as three second sub-magnets. The two sides of the fixed target 122 are respectively provided with an accommodating chamber 121, and three second sub-magnets are arranged in each of the two accommodating chambers 121. The axis of each second sub-magnet is parallel to the axis of the fixed target 122, and each second sub-magnet can be provided as long 5 cm, wide 5 cm, and high 30 cm. Of course, the second sub-magnet can also be designed as other sizes according to the actual application, and the embodiment does not make specific limitations on this. The first and second magnetic poles of the three second sub-magnets in each accommodating chamber 121 are respectively located at the two ends of the fixed target 122 along the axial direction, and the polarities of the first and second magnetic poles of the second sub-magnet are opposite. As shown in Figure 1 and Figure 4As shown, the upper end of the second sub-magnet is set as N pole, and the lower end of the second sub-magnet is set as S pole. Alternatively, the upper end of the second sub-magnet is set as S pole, and the lower end of the second sub-magnet is set as N pole correspondingly. The second magnet is designed in this way to make the magnetic induction lines generated thereby parallel to the sputtering surface of the fixed target material, so that the sputtering range of the target material is wider, the sputtering area is larger, and the utilization rate of the target material is improved.

[0040] When the work stand 300 is hung on the sputtered product 200 rotating, the magnetron sputtering combined device 100 works and performs film coating on the sputtered product. The arrangement of the first magnet 113 and the second magnet 123 can make the plasma exist in a larger target surface range, realize uniform sputtering of the target surface, and realize full-target sputtering as much as possible, so that the sputtering range of the target material is wider, the sputtering area is larger, the utilization rate of the target material is improved, the film coating efficiency is improved, the target material replacement cycle is prolonged, and the mechanical labor intensity is reduced.

[0041] As shown in Figure 1 and Figure 3 , the magnetron sputtering combined device 100 further comprises a cooling body (not labeled in the figure), and the hollow chamber 111 is further provided with the cooling body. By arranging the cooling body in the hollow chamber 111, the first magnet 113 and the rotating target material 112 in the hollow chamber 111 can be cooled, so that the cooling time of the first magnet 113 and the rotating target material 112 during the working process of the magnetron sputtering combined device 100 is shortened, the magnetron sputtering time is shortened, and the problem of long cooling time is solved.

[0042] Further, as shown in Figure 1 and Figure 4 , the accommodating chamber 121 is further provided with the cooling body, and the back surface of the fixed target material 122 is provided with a cooling chamber 124 for accommodating the cooling body. By arranging the cooling body in the accommodating chamber 121 and the cooling body in the cooling chamber 124, the second magnet 123 and the fixed target material 122 in the accommodating chamber 121 can be cooled, so that the cooling time of the second magnet 123 and the fixed target material 122 during the working process of the magnetron sputtering combined device 100 is shortened, the magnetron sputtering time is shortened, and the problem of long cooling time is solved. It should be noted that the cooling body can be cooling water, of course, the cooling body can also be other substances with cooling function, and the present embodiment does not make specific limitation in this regard.

[0043] The magnetron sputtering combined device of the embodiment of the present disclosure can better cool the magnetron sputtering combined device by arranging the cooling body in the hollow chamber, the accommodating chamber and the cooling chamber, and improve the cooling efficiency of the device, so as to shorten the cooling time of the magnetron sputtering.

[0044] In another aspect, the embodiments of the present disclosure provide a magnetron sputtering device comprising the magnetron sputtering assembly as described above, and the specific structure of the magnetron sputtering assembly can refer to the related description above, which will not be described in detail here.

[0045] The magnetron sputtering device of the embodiments of the present disclosure can make the plasma exist in a larger target surface range, realize uniform sputtering of the target surface, effectively improve the utilization rate of the target material, and improve the film deposition rate, shorten the cooling time.

[0046] It can be understood that the above embodiments are only exemplary embodiments adopted for illustrating the principles of the present disclosure, and the present disclosure is not limited thereto. Various modifications and improvements can be made by those of ordinary skill in the art without departing from the spirit and essence of the present disclosure, and these modifications and improvements are also considered as the protection scope of the present disclosure.

Claims

1. A magnetron sputter combination apparatus, characterized by, The magnetron sputtering combined device comprises a columnar target assembly and at least one planar target assembly; The columnar target assembly comprises a rotating target provided with a hollow chamber and a plurality of first magnets arranged in the hollow chamber; The planar target assembly comprises a fixed target provided with a receiving chamber at two sides and a second magnet arranged in the receiving chamber; wherein, The planar target assembly is arranged along the circumference of the columnar target assembly, and the sputtering surface of the fixed target corresponds to the sputtering surface of the rotating target; The first magnets are arranged in a plurality of numbers; each of the first magnets is symmetrically distributed in the hollow chamber with the axis of the hollow chamber as the center line, so that the magnetic induction lines generated by each of the first magnets are parallel to the sputtering surface of the rotating target, and the magnetic induction lines generated by each of the first magnets are uniformly distributed in the rotating target; The second magnet comprises a plurality of second sub-magnets; the plurality of second sub-magnets are arranged along the axis of the receiving chamber, and the axes of the plurality of second sub-magnets are parallel to the axis of the fixed target, so that the magnetic induction lines generated by each of the second sub-magnets are parallel to the sputtering surface of the fixed target; The magnetron sputtering combined device further comprises a workbench for hanging a sputtered product; the workbench is rotatably sleeved on the columnar target assembly, and the rotation direction of the workbench is opposite to the rotation direction of the rotating target of the columnar target assembly.

2. The magnetron sputter combination device according to claim 1, characterized in that The magnetron sputtering combined device comprises a plurality of planar target assemblies; The plurality of planar target assemblies are arranged along the circumference of the columnar target assembly.

3. The magnetron sputter combination device according to claim 1, characterized in that The first magnets are arranged in four numbers; The first magnetic poles and the second magnetic poles of the four first magnets are respectively located at two ends of the rotating target along the axial direction, and the polarities of the first magnetic poles and the second magnetic poles are opposite.

4. The magnetron sputter combination device according to claim 1, characterized in that The second magnet is arranged as three second sub-magnets; The first magnetic poles and the second magnetic poles of the three second sub-magnets are respectively located at two ends of the fixed target along the axial direction, and the polarities of the first magnetic poles and the second magnetic poles of the second sub-magnets are opposite.

5. A magnetron sputter combination assembly according to any one of claims 1 to 4, wherein The magnetron sputtering combined device further comprises a cooling body, and the hollow chamber is further provided with the cooling body.

6. The magnetron sputter combination device according to claim 5, characterized in that The receiving chamber is further provided with the cooling body, and the back surface of the fixed target is provided with a cooling chamber for accommodating the cooling body.

7. A magnetron sputtering apparatus, characterized by comprising: The magnetron sputtering combined device comprises the magnetron sputtering combined device according to any one of claims 1 to 6.

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