Reduction furnace control method and device, electronic equipment and readable storage medium

Abstract

This application provides a reduction furnace control method, apparatus, electronic device, and readable storage medium. It adjusts the chlorosilane flow rate, chlorosilane to hydrogen flow ratio, and temperature of the reduction furnace based on the furnace's atomization factor, rate factor, quality factor, and cost factor. Since the atomization factor, rate factor, quality factor, and cost factor are determined based on multiple monitoring values ​​of the reduction furnace, it provides a more reliable basis for adjustment compared to adjusting the reduction furnace based on a single monitoring value, thereby improving the accuracy of adjusting the chlorosilane flow rate, chlorosilane to hydrogen flow ratio, and temperature input to the reduction furnace.

Description

Technical Field

[0001] This application relates to the field of automation technology, and in particular to a reduction furnace control method, apparatus, electronic device, and readable storage medium. Background Technology

[0002] The reduction furnace is the core equipment in polysilicon production. In the polysilicon reduction furnace, a certain amount of vaporized chlorosilane is mixed with high-purity hydrogen in a certain proportion and introduced into the reduction furnace. When the temperature is suitable, a chemical vapor deposition reaction will occur on the surface of the silicon rod in the reduction furnace to generate polysilicon. At the same time, the generated polysilicon will be deposited on the surface of the silicon rod, causing the diameter of the silicon rod to grow continuously until it reaches the specified diameter, thus completing one polysilicon production process.

[0003] In the polysilicon production process, input values ​​such as the temperature of the reduction furnace, the flow rate of raw materials entering the reduction furnace, and the ratio all affect the polysilicon production process. The conventional approach in the existing technology is to first obtain a certain monitoring value of the reduction furnace, and then adjust the input values ​​based on that monitoring value.

[0004] However, a single monitoring value of the reduction furnace is prone to error or cannot adequately characterize the working condition of the reduction furnace. Therefore, there is a lack of reliable basis for real-time adjustment of the temperature, raw material flow rate, and ratio of the reduction furnace in related technologies, resulting in poor accuracy in adjusting these parameters. Summary of the Invention

[0005] The purpose of this application is to provide a reduction furnace control method, device, electronic device, and readable storage medium to solve the problem of poor accuracy in adjusting the temperature, raw material flow rate, and proportion of the reduction furnace in related technologies.

[0006] In a first aspect, embodiments of this application provide a reduction furnace control method, including:

[0007] The monitoring values ​​of the reduction furnace at different times are obtained. The monitoring values ​​at each time include: voltage, resistance, power, furnace temperature, exhaust gas temperature, cooling water temperature, atomization value, silicon rod temperature, silicon rod diameter, silicon rod surface roughness, silicon rod porosity, chlorosilane flow rate, and the flow ratio of chlorosilane to hydrogen.

[0008] Based on the atomization value, the atomization factor is determined according to the rate of change of at least one of the voltage, the silicon rod temperature, the exhaust gas temperature, and the cooling water temperature.

[0009] When the atomization factor is equal to zero, the rate factor, quality factor, and cost factor are determined based on at least two of the following: voltage, power, resistance, silicon rod diameter, silicon rod surface roughness, silicon rod porosity, chlorosilane flow rate, and the flow ratio of chlorosilane to hydrogen.

[0010] The first flow rate of chlorosilane, the first flow rate ratio of chlorosilane to hydrogen, and the first temperature of the reduction furnace are calculated based on the furnace temperature, the chlorosilane flow rate, the chlorosilane to hydrogen flow ratio, the rate factor, the quality factor, and the cost factor.

[0011] When chlorosilane is fed into the reduction furnace at the first flow rate and chlorosilane and hydrogen are fed into the reduction furnace according to the first flow rate ratio of the chlorosilane to hydrogen, the reduction furnace is controlled to operate at the first temperature.

[0012] Wherein, the atomization factor is a value characterizing the degree of atomization in the reduction furnace; the rate factor is a value characterizing the speed of polycrystalline silicon growth in the reduction furnace; the quality factor is a value characterizing the quality of polycrystalline silicon produced in the reduction furnace; and the cost factor is a value characterizing the energy consumption and material consumption of the reduction furnace.

[0013] Optionally, determining the rate factor, quality factor, and cost factor based on at least two of the following: voltage, power, resistance, silicon rod diameter, silicon rod surface roughness, silicon rod porosity, chlorosilane flow rate, and the chlorosilane to hydrogen flow rate ratio includes:

[0014] The rate factor is determined based on at least two of the voltage, the silicon rod diameter, and the resistance.

[0015] The quality factor is determined based on the surface roughness and porosity of the silicon rod.

[0016] The cost factor is determined based on at least two of the following: voltage, power, resistance, chlorosilane flow rate, and the ratio of chlorosilane to hydrogen flow rate.

[0017] Optionally, calculating the first flow rate of chlorosilane, the first flow rate ratio of chlorosilane to hydrogen, and the first temperature of the reduction furnace based on the furnace temperature, the chlorosilane flow rate, the chlorosilane to hydrogen flow ratio, the rate factor, the quality factor, and the cost factor includes:

[0018] The first flow ratio of chlorosilane to hydrogen is calculated based on the flow ratio of chlorosilane to hydrogen, the rate factor, the quality factor, and the cost factor.

[0019] The first flow rate of chlorosilane is calculated based on the chlorosilane flow rate, the rate factor, the quality factor, and the cost factor;

[0020] The first temperature of the reduction furnace is calculated based on the furnace temperature, the rate factor, the quality factor, and the cost factor.

[0021] Optionally, after determining the atomization factor based on the atomization value and according to the rate of change of at least one of the voltage, the silicon rod temperature, the exhaust gas temperature, and the cooling water temperature, the method further includes:

[0022] When the atomization factor is not equal to zero, the second flow rate of chlorosilane, the second flow rate ratio of chlorosilane to hydrogen, and the second temperature of the reduction furnace are calculated based on the furnace temperature, the chlorosilane flow rate, the flow ratio of chlorosilane to hydrogen, and the atomization factor.

[0023] When chlorosilane is fed into the reduction furnace at the second flow rate and chlorosilane and hydrogen are fed into the reduction furnace according to the second flow rate ratio of chlorosilane to hydrogen, the reduction furnace is controlled to operate at the second temperature.

[0024] Optionally, when the atomization factor is not equal to zero, calculating the second flow rate of chlorosilane, the second flow rate ratio of chlorosilane to hydrogen, and the second temperature of the reduction furnace based on the furnace temperature, the chlorosilane flow rate, the flow ratio of chlorosilane to hydrogen, and the atomization factor includes:

[0025] The second temperature of the reduction furnace is calculated based on the furnace temperature and the atomization factor.

[0026] Calculate the second flow rate of the chlorosilane based on the chlorosilane flow rate and the atomization factor;

[0027] The second flow ratio of chlorosilane to hydrogen is calculated based on the flow ratio of chlorosilane to hydrogen and the atomization factor.

[0028] Optionally, a value of 0 for the atomization factor indicates that the atomization degree in the reduction furnace is normal; a value greater than 0 for the atomization factor indicates that the atomization degree in the reduction furnace is low; and a value less than 0 for the atomization factor indicates that the atomization degree in the reduction furnace is high.

[0029] When the rate factor is 0, it indicates that the growth rate of polysilicon in the reduction furnace is normal; when the rate factor is greater than 0, it indicates that the growth rate of polysilicon in the reduction furnace is relatively fast; when the rate factor is less than 0, it indicates that the growth rate of polysilicon in the reduction furnace is relatively slow.

[0030] A quality factor value of 0 indicates normal quality of polysilicon produced in the reduction furnace; a quality factor value greater than 0 indicates relatively good quality of polysilicon produced in the reduction furnace; and a quality factor value less than 0 indicates relatively poor quality of polysilicon produced in the reduction furnace.

[0031] A cost factor value of 0 indicates normal energy and material consumption levels in the reduction furnace; a cost factor value greater than 0 indicates low energy and material consumption; and a cost factor value less than 0 indicates high energy and material consumption.

[0032] Secondly, embodiments of this application provide a reduction furnace control device, comprising:

[0033] The acquisition module is used to acquire the monitoring values ​​of the reduction furnace at different times. The monitoring values ​​at each time include: voltage, resistance, power, furnace temperature, exhaust gas temperature, cooling water temperature, atomization value, silicon rod temperature, silicon rod diameter, silicon rod surface roughness, silicon rod porosity, chlorosilane flow rate, and the flow ratio of chlorosilane to hydrogen.

[0034] The first determining module is used to determine the atomization factor based on the atomization value and according to the rate of change of at least one of the voltage, the silicon rod temperature, the exhaust gas temperature, and the cooling water temperature.

[0035] The second determining module is used to determine a rate factor, a quality factor, and a cost factor based on at least two of the following when the atomization factor is equal to zero: the voltage, the power, the resistance, the silicon rod diameter, the silicon rod surface roughness, the silicon rod porosity, the chlorosilane flow rate, and the flow ratio of the chlorosilane to hydrogen.

[0036] The first calculation module is used to calculate the first flow rate of chlorosilane, the first flow rate ratio of chlorosilane to hydrogen, and the first temperature of the reduction furnace based on the furnace temperature, the chlorosilane flow rate, the flow ratio of chlorosilane to hydrogen, the rate factor, the quality factor, and the cost factor.

[0037] The first control module is used to control the reduction furnace to operate at the first temperature when chlorosilane is fed into the reduction furnace at the first flow rate and chlorosilane and hydrogen are fed into the reduction furnace according to the first flow rate ratio of the chlorosilane and hydrogen.

[0038] Wherein, the atomization factor is a value characterizing the degree of atomization in the reduction furnace; the rate factor is a value characterizing the speed of polycrystalline silicon growth in the reduction furnace; the quality factor is a value characterizing the quality of polycrystalline silicon produced in the reduction furnace; and the cost factor is a value characterizing the energy consumption and material consumption of the reduction furnace.

[0039] Optionally, the second determining module includes:

[0040] A first determining submodule is configured to determine the rate factor based on at least two of the voltage, the silicon rod diameter, and the resistance;

[0041] The second determining submodule is used to determine the quality factor based on the surface roughness and porosity of the silicon rod;

[0042] The third determining submodule is used to determine the cost factor based on at least two of the following: the voltage, the power, the resistance, the chlorosilane flow rate, and the flow ratio of the chlorosilane to hydrogen.

[0043] Optionally, the first computing module includes:

[0044] The first calculation submodule is used to calculate the first flow ratio of chlorosilane to hydrogen based on the flow ratio of chlorosilane to hydrogen, the rate factor, the quality factor, and the cost factor.

[0045] The second calculation submodule is used to calculate the first flow rate of chlorosilane based on the chlorosilane flow rate, the rate factor, the quality factor, and the cost factor;

[0046] The third calculation submodule is used to calculate the first temperature of the reduction furnace based on the furnace temperature, the rate factor, the quality factor, and the cost factor.

[0047] Optionally, the method further includes:

[0048] The second calculation module, when the atomization factor is not equal to zero, calculates the second flow rate of chlorosilane, the second flow rate ratio of chlorosilane to hydrogen, and the second temperature of the reduction furnace based on the furnace temperature, the chlorosilane flow rate, the flow ratio of chlorosilane to hydrogen, and the atomization factor.

[0049] The second control module is used to control the reduction furnace to operate at the second temperature when chlorosilane is fed into the reduction furnace at the second flow rate and when chlorosilane and hydrogen are fed into the reduction furnace according to the second flow rate ratio of the chlorosilane to hydrogen.

[0050] Optionally, the second computing module includes:

[0051] The fourth calculation submodule is used to calculate the second temperature of the reduction furnace based on the furnace temperature and the atomization factor.

[0052] The fifth calculation submodule is used to calculate the second flow rate of chlorosilane based on the chlorosilane flow rate and the atomization factor;

[0053] The sixth calculation submodule is used to calculate the second flow ratio of chlorosilane to hydrogen based on the flow ratio of chlorosilane to hydrogen and the atomization factor.

[0054] Thirdly, embodiments of this application provide an electronic device, including: a memory, a processor, and a program stored in the memory and executable on the processor, wherein the processor is used to execute the program in the memory to implement the steps of the reduction furnace control method described above.

[0055] Fourthly, embodiments of this application provide a readable storage medium for storing a program that, when executed by a processor, implements the steps of the reduction furnace control method described above.

[0056] This application provides a reduction furnace control method, apparatus, electronic device, and readable storage medium. It adjusts the chlorosilane flow rate, chlorosilane to hydrogen flow ratio, and temperature of the reduction furnace based on the furnace's atomization factor, rate factor, quality factor, and cost factor. Since the atomization factor, rate factor, quality factor, and cost factor are determined based on multiple monitoring values ​​of the reduction furnace, it provides a more reliable basis for adjustment compared to adjusting the reduction furnace based on a single monitoring value, thereby improving the accuracy of adjusting the chlorosilane flow rate, chlorosilane to hydrogen flow ratio, and temperature input to the reduction furnace. Attached Figure Description

[0057] To more clearly illustrate the technical solutions of the embodiments of this application, the drawings used in the description of the embodiments of this application will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0058] Figure 1 This is a schematic flowchart of a reduction furnace control method provided in an embodiment of the present invention;

[0059] Figure 2 This is a schematic diagram of the structure of a reduction furnace control device provided in an embodiment of the present invention;

[0060] Figure 3 This is a schematic diagram of the structure of an electronic device provided in an embodiment of the present invention. Detailed Implementation

[0061] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, not all embodiments. Based on the embodiments of this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application.

[0062] Unless otherwise defined, the technical or scientific terms used in this application shall have the ordinary meaning understood by one of ordinary skill in the art to which this application pertains. The terms "first," "second," and similar terms used in this application do not indicate any order, quantity, or importance, but are merely used to distinguish different components. Terms such as "upper," "lower," "left," and "right" are used only to indicate relative positional relationships; when the absolute position of the described object changes, the relative positional relationship also changes accordingly.

[0063] like Figure 1 As shown, this application provides a reduction furnace control method, including:

[0064] Step 101: Obtain the monitoring values ​​of the reduction furnace at different times. The monitoring values ​​at each time include: voltage, resistance, power, furnace temperature, exhaust gas temperature, cooling water temperature, atomization value, silicon rod temperature, silicon rod diameter, silicon rod surface roughness, silicon rod porosity, chlorosilane flow rate, and the flow ratio of chlorosilane to hydrogen.

[0065] In step 101, the monitoring values ​​of the reduction furnace at different times are obtained. This can be done in real time or at regular intervals. No further restrictions are imposed here.

[0066] Furthermore, the data is collected at regular intervals, such as once every 1 second or once every 2 seconds. No further restrictions are imposed here.

[0067] The voltage can be obtained by setting up a voltmeter for detection; the resistance can be obtained by setting up an ammeter for detection; the power can be obtained by calculation based on the obtained voltage and resistance; the furnace temperature can be obtained by setting up a temperature sensor inside the furnace for detection; the exhaust gas temperature can be obtained by setting up a temperature sensor at the exhaust gas outlet of the reduction furnace for detection; the cooling water temperature can be obtained by setting up a temperature sensor at the cooling water pipe of the reduction furnace for detection; the atomization value can be obtained by setting up a dust detector at the exhaust gas outlet of the reduction furnace for detection; the silicon rod temperature can be obtained by setting up an infrared thermal imager; the silicon rod diameter can be obtained by setting up a camera to capture images of the silicon rod and calculating the silicon rod diameter using an image algorithm; the silicon rod surface roughness can be obtained by setting up a camera to capture images of the silicon rod and calculating the silicon rod surface roughness using an image algorithm; the silicon rod porosity can be obtained by setting up a camera to capture images of the silicon rod and calculating the silicon rod porosity using an image algorithm; the chlorosilane flow rate can be obtained by setting up a flow sensor at the feed inlet of the reduction furnace for detection; the ratio of chlorosilane to hydrogen flow rates can be obtained by setting up a flow sensor at the feed inlet of the reduction furnace to detect the hydrogen flow rate and chlorosilane flow rate and calculating the ratio.

[0068] Step 102: Based on the atomization value, determine the atomization factor according to the rate of change of at least one of the voltage, the silicon rod temperature, the exhaust gas temperature, and the cooling water temperature;

[0069] In step 102, the rate of change of the silicon rod temperature, the exhaust gas temperature, and the cooling water temperature is calculated using two different times of the silicon rod temperature, exhaust gas temperature, and cooling water temperature.

[0070] For example, if the temperature of the silicon rod is 1000 degrees Celsius at 12:00 and 1100 degrees Celsius at 12:10, then the rate of change of the silicon rod temperature is 10°C / min.

[0071] Step 103: When the atomization factor is equal to zero, determine the rate factor, quality factor, and cost factor based on at least two of the following: voltage, power, resistance, silicon rod diameter, silicon rod surface roughness, silicon rod porosity, chlorosilane flow rate, and the ratio of chlorosilane to hydrogen flow rate.

[0072] It should be understood that the atomization factor has five values: -2, -1, 0, 1, and 2, which respectively represent severe atomization, moderate atomization, normal atomization, relatively clear atomization, and clear atomization.

[0073] In step 103, when the atomization factor is equal to zero, that is, when the atomization degree of the reduction furnace is normal, the rate factor, quality factor and cost factor are determined based on at least two of the following: voltage, power, resistance, silicon rod diameter, silicon rod surface roughness, silicon rod porosity, chlorosilane flow rate and the ratio of chlorosilane to hydrogen flow rate.

[0074] It should be understood that the rate factor has five values: -2, -1, 0, 1, and 2, which respectively represent the rate as too slow, slow, normal, fast, and very fast.

[0075] It should be understood that the quality factor has five values: -2, -1, 0, 1, and 2, which respectively represent very poor quality, poor quality, normal quality, good quality, and very good quality.

[0076] It should be understood that the cost factor has five values: -2, -1, 0, 1, and 2, which respectively represent costs that are too high, relatively high, normal, low, and very low.

[0077] It should be noted that the rate factor can be determined based on the silicon rod diameter and resistance. As the silicon rod diameter increases, the larger the positive deviation of the rate of change of the silicon rod diameter from the reference value, the larger the rate factor. As the resistance decreases, the larger the negative deviation of the rate of change of the resistance from the reference value, the larger the rate factor.

[0078] It should be noted that the quality factor is determined based on the surface roughness and porosity of the silicon rod; the higher the surface roughness of the silicon rod, the lower the quality factor value; the higher the porosity of the silicon rod, the lower the quality factor value.

[0079] It should be noted that the cost factor is determined based on the flow rate of chlorosilane and the flow rate ratio of chlorosilane to hydrogen. Compared with the benchmark value, the larger the flow rate of chlorosilane, the smaller the cost factor value; and compared with the benchmark value, the larger the flow rate ratio of chlorosilane to hydrogen, the larger the cost factor value.

[0080] Step 104: Calculate the first flow rate of chlorosilane, the first flow rate ratio of chlorosilane to hydrogen, and the first temperature of the reduction furnace based on the furnace temperature, the chlorosilane flow rate, the chlorosilane to hydrogen flow ratio, the rate factor, the quality factor, and the cost factor.

[0081] In step 104, the first flow rate of the chlorosilane = the flow rate of the chlorosilane + (a1 * rate factor + b1 * quality factor + c1 * cost factor) * 100 kg / h + d1; where a1, b1 and c1 represent the respective weight values ​​of the rate factor, quality factor and cost factor, which can be set as needed, and d1 is a constant term that can be set as needed.

[0082] The first flow ratio of chlorosilane to hydrogen = the flow ratio of chlorosilane to hydrogen + (a2 * rate factor + b2 * quality factor + c2 * cost factor) * 0.1 + d2, where a2, b2 and c2 represent the respective weight values ​​of the rate factor, quality factor and cost factor, and can be set as needed, and d2 is a constant term that can be set as needed.

[0083] The first temperature of the reduction furnace = the furnace temperature + (a3 * rate factor + b3 * quality factor + c3 * cost factor) * 10℃ + d3, where a3, b3, and c3 represent the respective weight values ​​of the rate factor, quality factor, and cost factor, and can be set as needed. d3 is a constant term that can be set as needed.

[0084] Step 105: When chlorosilane is fed into the reduction furnace at the first flow rate and chlorosilane and hydrogen are fed into the reduction furnace according to the first flow rate ratio of chlorosilane to hydrogen, the reduction furnace is controlled to operate at the first temperature.

[0085] Wherein, the atomization factor is a value characterizing the degree of atomization in the reduction furnace; the rate factor is a value characterizing the speed of polycrystalline silicon growth in the reduction furnace; the quality factor is a value characterizing the quality of polycrystalline silicon produced in the reduction furnace; and the cost factor is a value characterizing the energy consumption and material consumption of the reduction furnace.

[0086] This application provides a reduction furnace control method, apparatus, electronic device, and readable storage medium. It adjusts the chlorosilane flow rate, chlorosilane to hydrogen flow ratio, and temperature of the reduction furnace based on the furnace's atomization factor, rate factor, quality factor, and cost factor. Since the atomization factor, rate factor, quality factor, and cost factor are determined based on multiple monitoring values ​​of the reduction furnace, it provides a more reliable basis for adjustment compared to adjusting the reduction furnace based on a single monitoring value, thereby improving the accuracy of adjusting the chlorosilane flow rate, chlorosilane to hydrogen flow ratio, and temperature input to the reduction furnace.

[0087] Optionally, determining the rate factor, quality factor, and cost factor based on at least two of the following: voltage, power, resistance, silicon rod diameter, silicon rod surface roughness, silicon rod porosity, chlorosilane flow rate, and the chlorosilane to hydrogen flow rate ratio includes:

[0088] The rate factor is determined based on at least two of the voltage, the silicon rod diameter, and the resistance.

[0089] Among them, the voltage is continuously decreasing, and the larger the negative deviation of the rate of change of the voltage compared with the reference value, the larger the value of the rate factor; the diameter of the silicon rod is continuously increasing, and the larger the positive deviation of the rate of change of the silicon rod compared with the reference value, the larger the value of the rate factor; the resistance is continuously decreasing, and the larger the negative deviation of the rate of change of the resistance compared with the reference value, the larger the rate factor accordingly.

[0090] The quality factor is determined based on the surface roughness and porosity of the silicon rod.

[0091] The greater the surface roughness of the silicon rod, the smaller the value of the quality factor; the greater the porosity of the silicon rod, the smaller the value of the quality factor.

[0092] The cost factor is determined based on at least two of the following: voltage, power, resistance, chlorosilane flow rate, and the ratio of chlorosilane to hydrogen flow rate.

[0093] Specifically, the voltage continuously decreases, and the greater the negative deviation of the voltage change rate from the reference value, the larger the cost factor value; the greater the negative deviation of the power from the reference value, the larger the cost factor value; the greater the negative deviation of the resistance from the reference value, the larger the cost factor value; the greater the chlorosilane flow rate compared to the reference value, the smaller the cost factor value; and the greater the ratio of chlorosilane to hydrogen flow rates compared to the reference value, the larger the cost factor value.

[0094] Optionally, calculating the first flow rate of chlorosilane, the first flow rate ratio of chlorosilane to hydrogen, and the first temperature of the reduction furnace based on the furnace temperature, the chlorosilane flow rate, the chlorosilane to hydrogen flow ratio, the rate factor, the quality factor, and the cost factor includes:

[0095] The first flow ratio of chlorosilane to hydrogen is calculated based on the flow ratio of chlorosilane to hydrogen, the rate factor, the quality factor, and the cost factor.

[0096] It should be understood that the first flow ratio of chlorosilane to hydrogen = the flow ratio of chlorosilane to hydrogen + (a2 * rate factor + b2 * quality factor + c2 * cost factor) * 0.1 + d2, where a2, b2 and c2 represent the respective weight values ​​of the rate factor, quality factor and cost factor, and can be set as needed, and d2 is a constant term that can be set as needed.

[0097] The first flow rate of chlorosilane is calculated based on the chlorosilane flow rate, the rate factor, the quality factor, and the cost factor;

[0098] It should be understood that the first flow rate of the chlorosilane = the flow rate of the chlorosilane + (a1 * rate factor + b1 * quality factor + c1 * cost factor) * 100 kg / h + d1; where a1, b1 and c1 represent the respective weight values ​​of the rate factor, quality factor and cost factor, which can be set as needed, and d1 is a constant term that can be set as needed.

[0099] The first temperature of the reduction furnace is calculated based on the furnace temperature, the rate factor, the quality factor, and the cost factor.

[0100] It should be understood that the first temperature of the reduction furnace = the furnace temperature + (a3 * rate factor + b3 * quality factor + c3 * cost factor) * 10℃ + d3, where a3, b3, and c3 represent the respective weight values ​​of the rate factor, quality factor, and cost factor, and can be set as needed, and d3 is a constant term that can be set as needed.

[0101] Optionally, a1, b1, c1, and d1 can be -1, -0.8, -0.1, and 100, respectively.

[0102] Optionally, a2, b2, c2, and d2 can be -1, -0.8, -0.1, and 100, respectively.

[0103] Optionally, a3, b3, c3, and d3 can be -1, -0.8, -0.1, and 100, respectively.

[0104] Optionally, after determining the atomization factor based on the atomization value and according to the rate of change of at least one of the voltage, the silicon rod temperature, the exhaust gas temperature, and the cooling water temperature, the method further includes:

[0105] When the atomization factor is not equal to zero, the second flow rate of chlorosilane, the second flow rate ratio of chlorosilane to hydrogen, and the second temperature of the reduction furnace are calculated based on the furnace temperature, the chlorosilane flow rate, the flow ratio of chlorosilane to hydrogen, and the atomization factor.

[0106] In this embodiment, the second flow rate of the chlorosilane = the chlorosilane flow rate + e1 * atomization factor * 10.1 + f1; where e1 can be set empirically, and f1 is a constant that can be set as needed.

[0107] The second flow ratio of chlorosilane to hydrogen = the flow ratio of chlorosilane to hydrogen + e2 * atomization factor * 0.1 + f2, where e2 can be set empirically, and f2 is a constant that can be set as needed.

[0108] The second temperature of the reduction furnace = the furnace temperature + e3 * atomization factor * 10 + f3, where e3 can be set based on experience, and f3 is a constant that can be set as needed.

[0109] When chlorosilane is fed into the reduction furnace at the second flow rate and chlorosilane and hydrogen are fed into the reduction furnace according to the second flow rate ratio of chlorosilane to hydrogen, the reduction furnace is controlled to operate at the second temperature.

[0110] Optionally, when the atomization factor is not equal to zero, calculating the second flow rate of chlorosilane, the second flow rate ratio of chlorosilane to hydrogen, and the second temperature of the reduction furnace based on the furnace temperature, the chlorosilane flow rate, the flow ratio of chlorosilane to hydrogen, and the atomization factor includes:

[0111] The second temperature of the reduction furnace is calculated based on the furnace temperature and the atomization factor.

[0112] In one embodiment, the second temperature of the reduction furnace is equal to the furnace temperature plus e3 * atomization factor * 10 + f3, where e3 can be set empirically and f3 is a constant that can be set as needed.

[0113] Calculate the second flow rate of the chlorosilane based on the chlorosilane flow rate and the atomization factor;

[0114] In one embodiment, the second flow rate of the chlorosilane = the chlorosilane flow rate + e1 * atomization factor * 10.1 + f1; where e1 can be set empirically, and f1 is a constant that can be set as needed.

[0115] The second flow ratio of chlorosilane to hydrogen is calculated based on the flow ratio of chlorosilane to hydrogen and the atomization factor.

[0116] In one embodiment, the second flow ratio of chlorosilane to hydrogen is equal to the flow ratio of chlorosilane to hydrogen plus e2 * atomization factor * 0.1 + f2, where e2 can be set empirically and f2 is a constant that can be set as needed.

[0117] Optionally, a value of 0 for the atomization factor indicates that the atomization degree in the reduction furnace is normal; a value greater than 0 for the atomization factor indicates that the atomization degree in the reduction furnace is low; and a value less than 0 for the atomization factor indicates that the atomization degree in the reduction furnace is high.

[0118] When the rate factor is 0, it indicates that the growth rate of polysilicon in the reduction furnace is normal; when the rate factor is greater than 0, it indicates that the growth rate of polysilicon in the reduction furnace is relatively fast; when the rate factor is less than 0, it indicates that the growth rate of polysilicon in the reduction furnace is relatively slow.

[0119] A quality factor value of 0 indicates normal quality of polysilicon produced in the reduction furnace; a quality factor value greater than 0 indicates relatively good quality of polysilicon produced in the reduction furnace; and a quality factor value less than 0 indicates relatively poor quality of polysilicon produced in the reduction furnace.

[0120] A cost factor value of 0 indicates normal energy and material consumption levels in the reduction furnace; a cost factor value greater than 0 indicates low energy and material consumption; and a cost factor value less than 0 indicates high energy and material consumption.

[0121] like Figure 2 As shown, this application embodiment provides a reduction furnace control device 200, including:

[0122] The acquisition module 201 is used to acquire the monitoring values ​​of the reduction furnace at different times. The monitoring values ​​at each time include: voltage, resistance, power, furnace temperature, exhaust gas temperature, cooling water temperature, atomization value, silicon rod temperature, silicon rod diameter, silicon rod surface roughness, silicon rod porosity, chlorosilane flow rate, and the flow ratio of chlorosilane to hydrogen.

[0123] The first determining module 202 is used to determine the atomization factor based on the atomization value and according to the rate of change of at least one of the voltage, the silicon rod temperature, the exhaust gas temperature and the cooling water temperature.

[0124] The second determining module 203 is used to determine a rate factor, a quality factor, and a cost factor based on at least two of the following when the atomization factor is equal to zero: the voltage, the power, the resistance, the silicon rod diameter, the silicon rod surface roughness, the silicon rod porosity, the chlorosilane flow rate, and the flow ratio of the chlorosilane to hydrogen.

[0125] The first calculation module 204 is used to calculate the first flow rate of chlorosilane, the first flow rate ratio of chlorosilane to hydrogen, and the first temperature of the reduction furnace based on the furnace temperature, the chlorosilane flow rate, the flow ratio of chlorosilane to hydrogen, the rate factor, the quality factor, and the cost factor.

[0126] The first control module 205 is used to control the reduction furnace to operate at the first temperature when chlorosilane is fed into the reduction furnace at the first flow rate and chlorosilane and hydrogen are fed into the reduction furnace according to the first flow rate ratio of the chlorosilane and hydrogen.

[0127] Wherein, the atomization factor is a value characterizing the degree of atomization in the reduction furnace; the rate factor is a value characterizing the speed of polycrystalline silicon growth in the reduction furnace; the quality factor is a value characterizing the quality of polycrystalline silicon produced in the reduction furnace; and the cost factor is a value characterizing the energy consumption and material consumption of the reduction furnace.

[0128] Optionally, the second determining module 203 includes:

[0129] A first determining submodule is configured to determine the rate factor based on at least two of the voltage, the silicon rod diameter, and the resistance;

[0130] The second determining submodule is used to determine the quality factor based on the surface roughness and porosity of the silicon rod;

[0131] The third determining submodule is used to determine the cost factor based on at least two of the following: the voltage, the power, the resistance, the chlorosilane flow rate, and the flow ratio of the chlorosilane to hydrogen.

[0132] Optionally, the first computing module 204 includes:

[0133] The first calculation submodule is used to calculate the first flow ratio of chlorosilane to hydrogen based on the flow ratio of chlorosilane to hydrogen, the rate factor, the quality factor, and the cost factor.

[0134] The second calculation submodule is used to calculate the first flow rate of chlorosilane based on the chlorosilane flow rate, the rate factor, the quality factor, and the cost factor;

[0135] The third calculation submodule is used to calculate the first temperature of the reduction furnace based on the furnace temperature, the rate factor, the quality factor, and the cost factor.

[0136] Optionally, the method further includes:

[0137] The second calculation module, when the atomization factor is not equal to zero, calculates the second flow rate of chlorosilane, the second flow rate ratio of chlorosilane to hydrogen, and the second temperature of the reduction furnace based on the furnace temperature, the chlorosilane flow rate, the flow ratio of chlorosilane to hydrogen, and the atomization factor.

[0138] The second control module is used to control the reduction furnace to operate at the second temperature when chlorosilane is fed into the reduction furnace at the second flow rate and when chlorosilane and hydrogen are fed into the reduction furnace according to the second flow rate ratio of the chlorosilane to hydrogen.

[0139] Optionally, the second computing module includes:

[0140] The fourth calculation submodule is used to calculate the second temperature of the reduction furnace based on the furnace temperature and the atomization factor.

[0141] The fifth calculation submodule is used to calculate the second flow rate of chlorosilane based on the chlorosilane flow rate and the atomization factor;

[0142] The sixth calculation submodule is used to calculate the second flow ratio of chlorosilane to hydrogen based on the flow ratio of chlorosilane to hydrogen and the atomization factor.

[0143] Thirdly, embodiments of this application provide an electronic device, including: a memory, a processor, and a program stored in the memory and executable on the processor, wherein the processor is used to execute the program in the memory to implement the steps of the reduction furnace control method described above.

[0144] Fourthly, embodiments of this application provide a readable storage medium for storing a program that, when executed by a processor, implements the steps of the reduction furnace control method described above.

[0145] The reduction furnace control device provided in this application embodiment can realize the various processes in the above method embodiments, and will not be described again here to avoid repetition.

[0146] like Figure 3 As shown, an embodiment of the present invention provides an electronic device, including: a memory 302, a processor 301, and a program 3021 stored in the memory and executable on the processor; the processor 301 is used to execute the program 3021 in the memory 302 to implement the above-mentioned... Figure 1 Any step in the corresponding method embodiment.

[0147] This application also provides a readable storage medium storing a computer program, which, when executed by a processor, can perform the above-described functions. Figure 1 Any step in the corresponding method embodiment can achieve the same technical effect, and will not be repeated here to avoid repetition.

[0148] The computer-readable storage medium of this application embodiment can be any combination of one or more computer-readable media. The computer-readable medium can be a computer-readable signal medium or a computer-readable storage medium. For example, a computer-readable storage medium can be an electrical, magnetic, optical, electromagnetic, infrared, or semiconductor system, apparatus, or device, or any combination thereof. More specific examples of computer-readable storage media (a non-exhaustive list) include: an electrical connection having one or more wires, a portable computer disk, a hard disk, random access memory (RAM), read-only memory (ROM), erasable programmable read-only memory (EPROM or flash memory), optical fiber, portable compact disk read-only memory (CD-ROM), optical storage device, magnetic storage device, or any suitable combination thereof. In this document, a computer-readable storage medium can be any tangible medium containing or storing a program that can be used by or in conjunction with an instruction execution system, apparatus, or device.

[0149] Computer-readable signal media may include data signals propagated in baseband or as part of a carrier wave, carrying computer-readable program code. Such propagated data signals may take various forms, including but not limited to electromagnetic signals, optical signals, or any suitable combination thereof. Computer-readable signal media may also be any computer-readable medium other than computer-readable storage media, capable of sending, propagating, or transmitting programs for use by or in connection with an instruction execution system, apparatus, or device.

[0150] The program code contained on the storage medium can be transmitted using any suitable medium, including but not limited to wireless, wire, optical fiber, RF, etc., or any suitable combination thereof.

[0151] Computer program code for performing the operations of this application can be written in one or more programming languages ​​or a combination thereof, including object-oriented programming languages ​​such as Java, Smalltalk, and C++, and conventional procedural programming languages ​​such as the "C" language or similar programming languages. The program code can be executed entirely on the user's computer, partially on the user's computer, as a standalone software package, partially on the user's computer and partially on a remote computer, or entirely on a remote computer or terminal. In cases involving remote computers, the remote computer can be connected to the user's computer via any type of network—including a local area network (LAN) or a wide area network (WAN)—or can be connected to an external computer (e.g., via the Internet using an Internet service provider).

[0152] The above description represents the preferred embodiments of this application. It should be noted that those skilled in the art can make various improvements and modifications without departing from the principles described in this application, and these improvements and modifications should also be considered within the scope of protection of this application.

Claims

1. A method for controlling a reduction furnace, characterized in that, The method includes: The monitoring values ​​of the reduction furnace at different times are obtained. The monitoring values ​​at each time include: voltage, resistance, power, furnace temperature, exhaust gas temperature, cooling water temperature, atomization value, silicon rod temperature, silicon rod diameter, silicon rod surface roughness, silicon rod porosity, chlorosilane flow rate, and the flow ratio of chlorosilane to hydrogen. Based on the atomization value, the atomization factor is determined according to the rate of change of at least one of the voltage, the silicon rod temperature, the exhaust gas temperature, and the cooling water temperature. When the atomization factor is not equal to zero, the second flow rate of chlorosilane, the second flow rate ratio of chlorosilane to hydrogen, and the second temperature of the reduction furnace are calculated based on the furnace temperature, the chlorosilane flow rate, the flow ratio of chlorosilane to hydrogen, and the atomization factor. When chlorosilane is fed into the reduction furnace at the second flow rate and chlorosilane and hydrogen are fed into the reduction furnace according to the second flow rate ratio of the chlorosilane to hydrogen, the reduction furnace is controlled to operate at the second temperature. When the atomization factor is equal to zero, the rate factor, quality factor, and cost factor are determined based on at least two of the following: voltage, power, resistance, silicon rod diameter, silicon rod surface roughness, silicon rod porosity, chlorosilane flow rate, and the flow ratio of chlorosilane to hydrogen. The calculation of the first flow rate of chlorosilane, the first flow rate ratio of chlorosilane to hydrogen, and the first temperature of the reduction furnace based on the furnace temperature, the chlorosilane flow rate, the flow ratio of chlorosilane to hydrogen, the rate factor, the quality factor, and the cost factor includes: calculating the first flow rate ratio of chlorosilane to hydrogen based on the flow ratio of chlorosilane to hydrogen, the rate factor, the quality factor, and the cost factor; calculating the first flow rate of chlorosilane based on the chlorosilane flow rate, the rate factor, the quality factor, and the cost factor; and calculating the first temperature of the reduction furnace based on the furnace temperature, the rate factor, the quality factor, and the cost factor. When chlorosilane is fed into the reduction furnace at the first flow rate and chlorosilane and hydrogen are fed into the reduction furnace according to the first flow rate ratio of the chlorosilane to hydrogen, the reduction furnace is controlled to operate at the first temperature. When the atomization factor is not equal to zero, the second flow rate of chlorosilane, the second flow rate ratio of chlorosilane to hydrogen, and the second temperature of the reduction furnace are calculated based on the furnace temperature, the chlorosilane flow rate, the flow ratio of chlorosilane to hydrogen, and the atomization factor. When chlorosilane is fed into the reduction furnace at the second flow rate and chlorosilane and hydrogen are fed into the reduction furnace according to the second flow rate ratio of the chlorosilane to hydrogen, the reduction furnace is controlled to operate at the second temperature. Wherein, the atomization factor is a value characterizing the degree of atomization in the reduction furnace; the rate factor is a value characterizing the speed of polycrystalline silicon growth in the reduction furnace; the quality factor is a value characterizing the quality of polycrystalline silicon produced in the reduction furnace; and the cost factor is a value characterizing the energy consumption and material consumption of the reduction furnace.

2. The reduction furnace control method according to claim 1, characterized in that, The calculation of the second flow rate of chlorosilane, the second flow rate ratio of chlorosilane to hydrogen, and the second temperature of the reduction furnace, based on the furnace temperature, the flow rate of chlorosilane, the flow ratio of chlorosilane to hydrogen, and the atomization factor when the atomization factor is not zero, includes: The second temperature of the reduction furnace is calculated based on the furnace temperature and the atomization factor. Calculate the second flow rate of the chlorosilane based on the chlorosilane flow rate and the atomization factor; The second flow ratio of chlorosilane to hydrogen is calculated based on the flow ratio of chlorosilane to hydrogen and the atomization factor.

3. The reduction furnace control method according to claim 1, characterized in that, When the atomization factor value is 0, it indicates that the atomization degree in the reduction furnace is normal; when the atomization factor value is greater than 0, it indicates that the atomization degree in the reduction furnace is low; when the atomization factor value is less than 0, it indicates that the atomization degree in the reduction furnace is high. When the rate factor is 0, it indicates that the growth rate of polysilicon in the reduction furnace is normal; when the rate factor is greater than 0, it indicates that the growth rate of polysilicon in the reduction furnace is relatively fast; when the rate factor is less than 0, it indicates that the growth rate of polysilicon in the reduction furnace is relatively slow. A quality factor value of 0 indicates normal quality of polysilicon produced in the reduction furnace; a quality factor value greater than 0 indicates relatively good quality of polysilicon produced in the reduction furnace; and a quality factor value less than 0 indicates relatively poor quality of polysilicon produced in the reduction furnace. A cost factor value of 0 indicates normal energy and material consumption levels in the reduction furnace; a cost factor value greater than 0 indicates low energy and material consumption; and a cost factor value less than 0 indicates high energy and material consumption.

4. A control device for a reduction furnace, characterized in that, include: The acquisition module is used to acquire the monitoring values ​​of the reduction furnace at different times. The monitoring values ​​at each time include: voltage, resistance, power, furnace temperature, exhaust gas temperature, cooling water temperature, atomization value, silicon rod temperature, silicon rod diameter, silicon rod surface roughness, silicon rod porosity, chlorosilane flow rate, and the flow ratio of chlorosilane to hydrogen. The first determining module is used to determine the atomization factor based on the atomization value and according to the rate of change of at least one of the voltage, the silicon rod temperature, the exhaust gas temperature, and the cooling water temperature. A second determining module is configured to determine a rate factor, a quality factor, and a cost factor based on at least two of the following: voltage, power, resistance, silicon rod diameter, silicon rod surface roughness, silicon rod porosity, chlorosilane flow rate, and the flow ratio of chlorosilane to hydrogen, when the atomization factor is equal to zero. The second determining module includes: a first determining submodule for determining the rate factor based on at least two of the following: voltage, silicon rod diameter, and resistance; a second determining submodule for determining the quality factor based on the silicon rod surface roughness and silicon rod porosity; and a third determining submodule for determining the cost factor based on at least two of the following: voltage, power, resistance, chlorosilane flow rate, and the flow ratio of chlorosilane to hydrogen. A first calculation module is used to calculate a first flow rate of chlorosilane, a first flow rate ratio of chlorosilane to hydrogen, and a first temperature of the reduction furnace based on the furnace temperature, the chlorosilane flow rate, the flow ratio of chlorosilane to hydrogen, the rate factor, the quality factor, and the cost factor. The first calculation module includes: a first calculation submodule used to calculate the first flow ratio of chlorosilane to hydrogen based on the flow ratio of chlorosilane to hydrogen, the rate factor, the quality factor, and the cost factor; a second calculation submodule used to calculate the first flow rate of chlorosilane based on the chlorosilane flow rate, the rate factor, the quality factor, and the cost factor; and a third calculation submodule used to calculate the first temperature of the reduction furnace based on the furnace temperature, the rate factor, the quality factor, and the cost factor. The control module is configured to control the reduction furnace to operate at the first temperature when chlorosilane is fed into the reduction furnace at the first flow rate and chlorosilane and hydrogen are fed into the reduction furnace according to the first flow rate ratio of the chlorosilane to hydrogen. The second calculation module, when the atomization factor is not equal to zero, calculates the second flow rate of chlorosilane, the second flow rate ratio of chlorosilane to hydrogen, and the second temperature of the reduction furnace based on the furnace temperature, the chlorosilane flow rate, the flow ratio of chlorosilane to hydrogen, and the atomization factor. The second control module is used to control the reduction furnace to operate at the second temperature when chlorosilane is fed into the reduction furnace at the second flow rate and chlorosilane and hydrogen are fed into the reduction furnace according to the second flow rate ratio of the chlorosilane and hydrogen. Wherein, the atomization factor is a value characterizing the degree of atomization in the reduction furnace; the rate factor is a value characterizing the speed of polycrystalline silicon growth in the reduction furnace; the quality factor is a value characterizing the quality of polycrystalline silicon produced in the reduction furnace; and the cost factor is a value characterizing the energy consumption and material consumption of the reduction furnace.

5. An electronic device, comprising: A memory, a processor, and a program stored in the memory and executable on the processor, characterized in that the processor is configured to execute the program in the memory to implement the steps of the reduction furnace control method as described in any one of claims 1 to 3.

6. A readable storage medium for storing a program, characterized in that, When the program is executed by the processor, it implements the steps of the reduction furnace control method as described in any one of claims 1 to 3.

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