Method for quickly adjusting a silicon carbide cutting angle

Abstract

The application relates to a method for quickly adjusting a silicon carbide cutting angle, belonging to the technical field of silicon carbide, which can quickly adjust the silicon carbide cutting angle by intentionally and accurately adjusting the X and Y axes of a crystal after loading the crystal after crystal orientation and obtaining the upper perpendicular line direction, so as to meet the angle requirement of a customer; and no matter how large the crystal angle is, the crystal can be adjusted according to the method, so that the angle of the cut wafer is controllable in precision, so as to meet the angle requirement of the customer. In the method for quickly adjusting the silicon carbide cutting angle, when a crystal to be cut is loaded to a cutting device, the upper perpendicular line needs to be parallel to a cutting line net, the opposite side of the flat edge is the starting cutting direction of the line net, the SI surface faces outward, and a dial gauge is used to dial the end surface; the operation process of reducing the angle includes reducing the X axis angle of the crystal and simultaneously reducing the X and Y axis angles of the crystal; and the operation process of increasing the angle includes increasing the X axis angle of the crystal and simultaneously increasing the X and Y axis angles of the crystal.

Description

Technical Field

[0001] This invention relates to the field of silicon carbide technology, and in particular to a method for rapidly adjusting the cutting angle of silicon carbide. Background Technology

[0002] Currently, the angle of silicon carbide wafers is of paramount importance and has always been a key focus for downstream epitaxy. After the silicon carbide crystal undergoes orientation processing, it achieves the desired crystal angle. When measuring the angle at the end face, the straight line perpendicular to the flat edge is referred to as the perpendicular bisector, and the straight line with the diffraction peak arrow is referred to as the vertical bisector (e.g., ...). Figure 1 As shown), at this time, the orientation instrument measures the crystal angle in the X-axis direction. To facilitate quick and accurate adjustment to the required post-cutting angle, when the crystal to be cut is loaded onto the cutting equipment, the vertical line needs to be parallel to the cutting grid (e.g., ...). Figure 2 As shown in the diagram, the direction opposite the flat edge is the starting cutting direction, with the SI surface facing outwards. A dial indicator is used to mark the end face. In actual operation, if there is an error in the angle after the previous cut, and it is necessary to reduce the angle, the corresponding crystal axis will be increased or decreased accordingly. In particular, when adjusting both axes simultaneously, the positions must be strictly matched and the adjustment heights must correspond one-to-one. Similarly, when increasing the angle, the corresponding crystal axis will be decreased or increased accordingly.

[0003] In other words, the current method for adjusting the cutting angle involves using a dial indicator to control the end face vertically and horizontally, essentially keeping it at 0' in both directions, making precise adjustment impossible. If a change in angle is required, the crystal angle needs to be increased or decreased in the previous crystal orientation process. Summary of the Invention

[0004] The purpose of this invention is to provide a method for rapidly adjusting the cutting angle of silicon carbide. This method involves intentionally and precisely adjusting the X and Y axes of the crystal after cutting and loading by using the vertical line direction obtained after crystal orientation, thereby achieving the angle requirements of the customer. Furthermore, regardless of the size of the crystal angle, it can be adjusted according to this method, thus making the angle of the cut wafer controllable and accurate to meet the angle requirements of the customer.

[0005] To achieve the above objectives, the present invention adopts the following technical solution:

[0006] A method for quickly adjusting the cutting angle of silicon carbide involves loading the crystal to be cut onto the cutting equipment, aligning the vertical line with the cutting mesh, with the direction opposite the flat edge being the starting cutting direction of the mesh, and the SI surface facing outwards. A dial indicator is then used to mark the end face.

[0007] The process of reducing the angle includes: reducing the crystal's X-axis angle and reducing the crystal's X and Y-axis angles simultaneously;

[0008] When the X-axis angle of the crystal decreases, the vertical line points to the left. When cutting at a lower angle, the right side needs to be increased accordingly, that is, the right side needs to be raised.

[0009] When the X and Y axis angles of a crystal are reduced simultaneously, the vertical line points to the left and is biased towards the third quadrant. When cutting at a reduced angle, the bottom needs to be lowered accordingly while the right side needs to be raised accordingly, that is, the bottom is lowered and the right side is raised. When the vertical line points to the left and is biased towards the second quadrant, when cutting at a reduced angle, the bottom and right sides need to be raised accordingly, that is, the bottom and right sides need to be raised.

[0010] The process of increasing the angle includes: increasing the crystal's X-axis angle and simultaneously increasing the crystal's X and Y-axis angles;

[0011] When the X-axis angle of the crystal increases, the vertical line points to the left. When cutting at an increased angle, the left side needs to be raised accordingly.

[0012] When the X and Y axis angles of a crystal increase simultaneously, the vertical line points to the left and is biased towards the third quadrant. When cutting at an increased angle, the height of the bottom needs to be increased accordingly while the height of the right side needs to be decreased accordingly, that is, the bottom needs to be raised and the right side needs to be lowered. When the vertical line points to the left and is biased towards the second quadrant, when cutting at an increased angle, the height of the bottom and right sides needs to be decreased accordingly, that is, the bottom and right sides need to be lowered.

[0013] Compared with existing technologies, the method for rapidly adjusting the silicon carbide cutting angle described in this invention has the following advantages:

[0014] The method for rapidly adjusting the silicon carbide cutting angle provided by this invention can accurately position the angle adjustment, ensuring the wafer angle after cutting and reducing resource waste caused by angle deviation; moreover, regardless of the crystal angle, it can be adjusted according to this method to make the cut wafer angle controllable and accurate, meeting the angle requirements of the customer. Attached Figure Description

[0015] Figure 1 This is a schematic diagram of the first structure of silicon carbide cutting angle in the prior art;

[0016] Figure 2 This is a schematic diagram of the second structure of silicon carbide cutting angle in the prior art;

[0017] Figure 3 A schematic diagram of a first structure for rapidly adjusting the silicon carbide cutting angle provided in an embodiment of the present invention;

[0018] Figure 4 A schematic diagram of the second structure for rapidly adjusting the silicon carbide cutting angle provided in an embodiment of the present invention;

[0019] Figure 5This is a schematic diagram of a third structure for rapidly adjusting the silicon carbide cutting angle, provided in an embodiment of the present invention. Implementation

[0020] For ease of understanding, the method for rapidly adjusting the silicon carbide cutting angle provided by the embodiments of the present invention will be described in detail below with reference to the accompanying drawings.

[0021] This invention provides a method for quickly adjusting the cutting angle of silicon carbide. When the crystal to be cut is loaded into the cutting equipment, the vertical line needs to be parallel to the cutting grid (e.g., ...). Figure 2 As shown), the direction opposite the flat edge is where the wire mesh begins to be cut, with the SI side facing outwards. Use a dial indicator to mark the end face.

[0022] The process of reducing the angle includes: reducing the crystal's X-axis angle and reducing the crystal's X and Y-axis angles simultaneously;

[0023] When the X-axis angle of the crystal decreases, the vertical line points to the left. Therefore, when cutting at a lower angle, the right side needs to be raised accordingly (e.g., the right side is raised). Figure 3 (as shown)

[0024] When the X and Y axis angles of the crystal decrease simultaneously, the vertical line points to the left and deviates towards the third quadrant (e.g., Figure 4 As shown), when cutting at a lower angle, the bottom needs to be lowered accordingly while the right side needs to be raised accordingly; that is, the bottom is lowered and the right side is raised. The vertical line points to the left and is biased towards the second quadrant (as shown). Figure 4 As shown), when cutting at a lower angle, the bottom and right sides need to be raised accordingly, that is, the bottom and right sides need to be raised.

[0025] The process of increasing the angle includes: increasing the crystal's X-axis angle and simultaneously increasing the crystal's X and Y-axis angles;

[0026] When the X-axis angle of the crystal increases, the vertical line points to the left. Therefore, when cutting at an increased angle, the left side needs to be raised accordingly (e.g., the left side is raised). Figure 5 (as shown)

[0027] When the X and Y axis angles of a crystal increase simultaneously, the vertical line points to the left and deviates towards the third quadrant (e.g., Figure 4 As shown), when increasing the cutting angle, the bottom needs to be raised accordingly while the right side needs to be lowered accordingly; that is, the bottom needs to be raised and the right side needs to be lowered. The vertical line points to the left and is biased towards the second quadrant (as shown). Figure 4 As shown in the figure, when increasing the angle of the cut, the bottom and right sides need to be lowered accordingly, that is, the bottom and right sides need to be lowered.

[0028] Compared with existing technologies, the method for rapidly adjusting the silicon carbide cutting angle described in this embodiment of the invention has the following advantages:

[0029] The method for rapidly adjusting the silicon carbide cutting angle provided in this invention can accurately position the angle adjustment, ensuring the wafer angle after cutting and reducing resource waste caused by angle deviation. Furthermore, regardless of the crystal angle, it can be adjusted according to this method to make the cut wafer angle controllable and meet the angle requirements of the customer.

[0030] It should be noted here that when using a dial indicator to check the end face, the relationship between the travel, the required adjustment angle, and the height is as follows:

[0031] The angle to be adjusted Itinerary mm Height difference μm Itinerary mm Height difference μm Itinerary mm Height difference μm 1′ 50 15 60 18 70 21 2′ 50 29 60 35 70 41 3′ 50 44 60 52 70 61 4′ 50 58 60 70 70 81 5′ 50 73 60 87 70 102 6′ 50 87 60 105 70 122 7′ 50 102 60 122 70 143 8′ 50 116 60 140 70 163 9′ 50 131 60 157 70 183 10′ 50 145 60 175 70 204

[0032] Note: The travel distance (left column) in the table above corresponds to the height difference (right column).

[0033] In summary, the method for rapidly adjusting the silicon carbide cutting angle provided by the embodiments of the present invention has the following advantages:

[0034] First, it can determine the internal structure and angular orientation of a crystal.

[0035] Second, it can precisely position and adjust the crystal.

[0036] Third, it can precisely position and adjust the crystal orientation;

[0037] IV. Regardless of the crystal angle, it can be adjusted to achieve the angle required by the customer.

[0038] Fifth, it can reduce the pressure on the previous process.

[0039] The above description is merely a specific embodiment of the present invention, but the scope of protection of the present invention is not limited thereto. Any variations or substitutions that can be easily conceived by those skilled in the art within the technical scope disclosed in the present invention should be included within the scope of protection of the present invention. Therefore, the scope of protection of the present invention should be determined by the scope of the claims.

Claims

1. A method of quickly adjusting a cutting angle of silicon carbide, characterized by, When the crystal to be cut is loaded into the cutting device, the perpendicular line needs to be parallel to the cutting line net, the flat side opposite to the cutting direction of the line net, the Si surface outward, and the end face is measured by using a micrometer; Quadrant division: taking the flat side opposite to the cutting direction of the line net as the reference, the center of the crystal end face as the origin, the horizontal axis parallel to the flat side direction through the origin as the X axis, and the vertical axis perpendicular to the X axis as the Y axis; the X axis and the Y axis divide the crystal end face into four regions, which are the first quadrant in the upper right, the second quadrant in the upper left, the third quadrant in the lower left, and the fourth quadrant in the lower right; The operation process of reducing the angle includes: reducing the X axis angle of the crystal and simultaneously reducing the X and Y axis angles of the crystal; When the X axis angle of the crystal is reduced, the perpendicular line points to the left direction, and the corresponding height needs to be increased on the right side during the cutting of the reduced angle, that is, the right side is raised; When the X and Y axis angles of the crystal are simultaneously reduced, the perpendicular line points to the left direction and deviates to the third quadrant, and the corresponding height needs to be reduced on the lower side and increased on the right side during the cutting of the reduced angle, that is, the lower side is lowered and the right side is raised; the perpendicular line points to the left direction and deviates to the second quadrant, and the corresponding height needs to be increased on the lower side and the right side during the cutting of the increased angle, that is, the lower side and the right side are raised; The operation process of increasing the angle includes: increasing the X axis angle of the crystal and simultaneously increasing the X and Y axis angles of the crystal; When the X axis angle of the crystal is increased, the perpendicular line points to the left direction, and the corresponding height needs to be increased on the left side during the cutting of the increased angle, that is, the left side is raised; When the X and Y axis angles of the crystal are simultaneously increased, the perpendicular line points to the left direction and deviates to the third quadrant, and the corresponding height needs to be increased on the lower side and reduced on the right side during the cutting of the increased angle, that is, the lower side is raised and the right side is lowered; the perpendicular line points to the left direction and deviates to the second quadrant, and the corresponding height needs to be reduced on the lower side and the right side during the cutting of the increased angle, that is, the lower side and the right side are lowered.

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