Copper alloy for non-magnetic etching frame and preparation method thereof

By controlling the content of Cr and Zr elements and adding Sn, Mg, Zn, and RE elements, combined with hot rolling and solution treatment, a copper alloy suitable for non-magnetic environments was prepared, which solved the problems of etching surface roughness and low etching efficiency and met the etching requirements of high-density lead frames.

CN116987928BActive Publication Date: 2025-09-09CENT SOUTH UNIV
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Patent Information

Application Number
CN202311186711.8
Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Filing Date
2023-09-14
Publication Date
2025-09-09
Estimated Expiration
2043-09-14

AI Technical Summary

Technical Problem

When existing non-magnetic etching frame copper alloys are used in non-magnetic environments, the etching surface is rough, the etching efficiency is low, and it is not suitable for fine etching products. Conventional alloys are also not suitable for the requirements of high-density lead frames.

Method used

By controlling the Cr and Zr elements to be far below the solid solubility limit, adding trace amounts of Sn, Mg, Zn and rare earth RE elements, and combining hot rolling, solid solution and deformation-heat treatment processes, a copper alloy with an average grain size of less than 10μm is prepared, ensuring that the roughness of the fully etched or half-etched surface is less than 0.5μm.

Benefits of technology

The copper alloy improves etching performance while maintaining high tensile strength and electrical conductivity, making it suitable for etching needs of very large-scale integrated circuits and high-density lead frames.

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Abstract

The present invention discloses a copper alloy for a non-magnetic etching frame and a preparation method thereof. The composition of the copper alloy for a non-magnetic etching frame includes: Cr 0.15-0.35wt%, Sn 0.1-0.2wt%, Zn 0.1-0.3wt%, Mg 0.05-0.15wt%, Zr 0.03-0.08wt%, RE 0.03-0.15wt%, and the balance is Cu and unavoidable impurity elements. The present invention controls the grain size of the ingot, solid solution state and finished product state, and the number of primary phases M with an ingot diameter greater than 5 microns is reduced. d5 And the number of precipitated phases less than 500nm in the finished matrix M d0.5 By combining thermomechanical treatment with finished product processing, the product achieves excellent electrical conductivity, mechanical properties, and etching performance. The copper alloy described in this invention can be used for etching lead frames for very large-scale integrated circuits (VLSIs) and high-density lead frames, which require high magnetic properties.
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Citation Information

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