A method for manufacturing a conductive film and a conductive film

Abstract

The application provides a preparation method of a conductive film and the conductive film, and the preparation method comprises the following steps: obtaining a support layer; and using a magnetron sputtering film plating mode to layer a first conductive layer on the support layer in a vacuum film plating device; wherein the first conductive layer comprises first metal particles and second metal particles, and the particle size of the first metal particles is larger than the particle size of the second metal particles. In the embodiment of the application, the particle sizes of the two different metal particles in the first conductive layer are set, the binding force between the first metal particles and the second metal particles is increased, the tightness between the metal particles in the first conductive layer is greatly improved, and the adhesion between the first conductive layer and the support layer is also improved.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of conductive film production, and particularly relates to a preparation method of conductive film and conductive film. BACKGROUND

[0002] The conductive film is a composite material, which comprises inorganic or organic material without conductivity, and then a layer of metal is formed on the inorganic or organic material. In recent years, with the demand for various multifunctional flexible conductive film products, the application of the product with good conductive performance by depositing a metal functional coating on a polymer-based film is very extensive.

[0003] However, the metal particle size of the conductive material layer on the current conductive film is roughly uniform, the adhesion between the conductive material layers is not enough, and the conductive layer is easy to fall off, so the adhesion performance of the interface between the metal and the polymer-based material is an important research problem. SUMMARY

[0004] Therefore, the purpose of the embodiments of the present application is to provide a preparation method of conductive film and conductive film, so as to solve the technical problem that the adhesion of the conductive material layer on the conductive film is not enough, resulting in the falling off of the conductive material.

[0005] To achieve the above purpose, the embodiments of the present application provide a preparation method of conductive film, which comprises:

[0006] obtaining a support layer;

[0007] adopting a magnetic control sputtering film plating mode in a vacuum film plating equipment to deposit a first conductive layer on the support layer; wherein,

[0008] the first conductive layer comprises first metal particles and second metal particles, and the particle size of the first metal particles is larger than the particle size of the second metal particles.

[0009] In some possible embodiments, the magnetic control sputtering film plating mode in the vacuum film plating equipment to deposit the first conductive layer on the support layer specifically comprises:

[0010] depositing the first metal particles on the support layer at a first ionization voltage, a first gas flow speed and a first film deposition speed;

[0011] depositing the second metal particles on the support layer at a second ionization voltage, a second gas flow speed and a second film deposition speed, and the second metal particles are located between two adjacent first metal particles; wherein,

[0012] the first ionization voltage is less than the second ionization voltage, the first gas flow speed is greater than the second gas flow speed, and the first film deposition speed is greater than the second film deposition speed.

[0013] In some possible implementations, after the first metal particles are deposited on the support layer at the first ionization voltage, the first gas flow speed, and the first film deposition speed, the method further comprises:

[0014] activating the surface of the first metal particles so as to activate the surface of the first metal particles.

[0015] In some possible implementations, before the first conductive layer is deposited on the support layer by the magnetron sputtering method in the vacuum film deposition device, the method further comprises:

[0016] In some possible implementations, before the first conductive layer is deposited on the support layer by the magnetron sputtering method in the vacuum film deposition device, the method further comprises:

[0017] In some possible implementations, the gap between two adjacent first metal particles is equal to an integer multiple of the particle size of the second metal particles.

[0018] In some possible implementations, the first metal particles are lithium-philic metal particles.

[0019] In some possible implementations, after the first conductive layer is deposited on the support layer by the magnetron sputtering method in the vacuum film deposition device, the method further comprises:

[0020] In some possible implementations, after the first conductive layer is deposited on the support layer by the magnetron sputtering method in the vacuum film deposition device, the method further comprises:

[0021] In some possible implementations, the second conductive layer is deposited on the surface of the first conductive layer by the magnetron sputtering method in the vacuum film deposition device, specifically comprising:

[0022] In some possible implementations, the second conductive layer is deposited on the surface of the first conductive layer by the magnetron sputtering method in the vacuum film deposition device, specifically comprising:

[0023] In some possible implementations, the second conductive layer is deposited on the surface of the first conductive layer by the magnetron sputtering method in the vacuum film deposition device, specifically comprising:

[0024] In some possible implementations, the second conductive layer is deposited on the surface of the first conductive layer by the magnetron sputtering method in the vacuum film deposition device, specifically comprising:

[0025] In some possible implementation manners, before the second conductive layer is deposited on the surface of the first conductive layer by using the magnetron sputtering method in the vacuum coating device, the method further includes the following steps of:

[0026] The surface of the first conductive layer is activated, so that the surfaces of the first metal particles and the second metal particles are activated.

[0027] In a second aspect, the embodiment of the present application further provides a conductive film, which is prepared by using the above method, and includes a support layer and a first conductive layer arranged on the surface of the support layer.

[0028] The first metal particles and the second metal particles are alternately arranged on the surface of the support layer, and the particle size of the first metal particles is larger than that of the second metal particles.

[0029] The above technical solution has the following beneficial technical effects:

[0030] The embodiment of the present application provides a conductive film and a preparation method thereof. The preparation method includes the following steps: obtaining a support layer; and depositing a first conductive layer on the support layer by using a magnetron sputtering method in a vacuum coating device. The first conductive layer includes first metal particles and second metal particles, and the particle size of the first metal particles is larger than that of the second metal particles. In the embodiment of the present application, the particle sizes of the two different metal particles in the first conductive layer are set, the binding force between the first metal particles and the second metal particles is increased, the tightness between the metal particles in the first conductive layer is greatly improved, and the adhesion between the first conductive layer and the support layer is also improved. BRIEF DESCRIPTION OF DRAWINGS

[0031] In order to more clearly illustrate the technical solutions of the embodiments of the present application or the prior art, the following will briefly introduce the drawings needed to be used in the embodiments or the prior art description. Obviously, the drawings in the following description are only some embodiments of the present application, and for those skilled in the art, other drawings can also be obtained without creative labor.

[0032] Figure 1 is a flow chart of a preparation method of a conductive film according to an embodiment of the present application;

[0033] Figure 2 is a structural schematic diagram of a first conductive film according to an embodiment of the present application;

[0034] Figure 3 is a structural schematic diagram of a second conductive film according to an embodiment of the present application;

[0035] Figure 4 is a structural diagram of a third conductive film according to an embodiment of the present application.

[0036] BRIEF DESCRIPTION OF DRAWINGS

[0037] 10, support layer; 11, first conductive layer; 111, first metal particles; 112, second metal particles; 12, second conductive layer; 121, third metal particles; 122, fourth metal particles; 13, current converging layer. DETAILED DESCRIPTION

[0038] Features and exemplary embodiments of various aspects of the present application will be described below in detail. In the following detailed description, numerous specific details are set forth in order to provide a thorough understanding of the present application. However, it will be apparent to one of ordinary skill in the art that the present application can be practiced without some or all of these specific details. The description of the embodiments is merely intended to provide a better understanding of the present application by showing examples of the present application. In the drawings and the following description, well-known structures and techniques are not shown in order to avoid unnecessary obscuring of the present application; and, the dimensions of some structures can be exaggerated for clarity. Furthermore, features, structures or characteristics described below can be combined in any suitable manner in one or more embodiments.

[0039] Embodiment One

[0040] Figure 1 is a flow chart of a method for manufacturing a conductive film according to an embodiment of the present application, Figure 2 is a structural diagram of a first conductive film according to an embodiment of the present application, as shown in Figure 1 and Figure 2 the method comprises the following steps:

[0041] Step S1, obtaining a support layer 10;

[0042] Specifically, in the present embodiment, the support layer 10 can be any one of polybutylene terephthalate, polyamide, polyterephthalate, polyimide, polyethylene, polypropylene, polystyrene, polyvinyl chloride, aramid, acrylonitrile-butadiene-styrene, poly(p-phenylene terephthalamide), polyacetal, epoxy resin, phenolic resin, polytetrafluoroethylene, polyvinylidene fluoride, silicone rubber, polycarbonate, polyvinyl alcohol, or polyethylene glycol.

[0043] In step S2, the first conductive layer 11 is deposited on the support layer 10 by magnetron sputtering in a vacuum coating device; the first conductive layer 11 includes first metal particles 111 and second metal particles 112, and the particle size of the first metal particles 111 is larger than that of the second metal particles 112.

[0044] Specifically, the first conductive layer 11 in the embodiment includes two kinds of metal particles with different particle sizes, i.e., the first metal particles 111 and the second metal particles 112, and the second metal particles 112 are deposited in the gaps between the first metal particles 111, so that the two kinds of particles with different particle sizes in the first conductive layer 11 have higher binding force, and the metal particles in the first conductive layer 11 are more closely combined, which not only helps to reduce the square resistance, but also reduces the amount of metal used in the production of the conductive film compared with the conductive layer produced by using the same process and having substantially the same particle size.

[0045] In some embodiments, the first conductive layer 11 is deposited on the support layer 10 by magnetron sputtering in a vacuum coating device, specifically including: depositing the first metal particles 111 on the support layer 10 at a first ionization voltage, a first gas flow rate and a first film deposition speed; depositing the second metal particles 112 on the support layer 10 at a second ionization voltage, a second gas flow rate and a second film deposition speed, the second metal particles 112 being located between adjacent two first metal particles 111; wherein the first ionization voltage is less than the second ionization voltage, the first gas flow rate is greater than the second gas flow rate, and the first film deposition speed is greater than the second film deposition speed.

[0046] Specifically, in the embodiment, the first conductive layer 11 is deposited on the surface of the support layer 10 by magnetron sputtering in a vacuum coating device. Since the principle of magnetron sputtering is to ionize inert gas by electric current under vacuum conditions, the inert gas is ionized into ions, there is a target material in the vacuum environment, the target material has a device for providing a magnetic field, and the ions hit the target material under the action of the magnetic field. The metal on the target material gets energy and leaves the surface of the target material, and then is deposited on the support layer 10, so that the conductive layer is formed on the support layer 10. Therefore, the particle size of the metal particles can be controlled by controlling the ionization voltage and the gas flow rate of the inert gas.

[0047] First, the first metal particles 111 are deposited on the support layer 10 by controlling the first ionization voltage, the first gas flow rate and the first film walking speed, and then the second metal particles 112 are deposited on the support layer 10 after the deposition of the first metal particles 111 by controlling the second ionization voltage, the second gas flow rate and the second film walking speed, the second metal particles 112 being deposited in the gap between the two adjacent first metal particles 111, which is equivalent to stacking small balls, two large balls being placed on the ground at a distance, and small balls being placed in the gap between the two large balls, of course, the subsequently placed small balls can also be placed on the already placed small balls, greatly increasing the tightness between the first metal particles 111 and the second metal particles 112.

[0048] For example, the ionization voltage in the embodiment can be 100V to 1000V, and the gas flow rate of the inert gas can be 100ml / min to 500ml / min; the higher the gas flow rate, the higher the probability of sputtered metal particles combining into large particles, the higher the gas flow rate, the greater the required current, and under the same power, the power is equal to the current multiplied by the voltage, the greater the current, the smaller the ionization voltage, so in the embodiment, the first ionization voltage is smaller than the second ionization voltage, the greater the current, the faster the gas flow rate, and the larger the metal particles formed after the inert gas bombards the target (just like using a large stone to splash on the water surface, the water splash is definitely larger than that of a small stone, the greater the current, the more energy, and the larger the bombarded metal particles). The faster the film walking speed of the support layer 10, the larger the gap between the metal particles formed on the support layer 10, and the faster the film walking speed, the larger the gap between the particles, so the second film walking speed is smaller than the first film walking speed, so that the second metal particles 112 can be located between the two adjacent first metal particles 111.

[0049] In the embodiment, the gap between the metal particles and the particle size and shape can be obtained by scanning electron microscopy, which is to fill small particle metals and subsequently allow lithium ions to enter and combine with lithiumophilic materials. For example, to form the first metal particles 111 (i.e. large particle size metal particles) of the first conductive layer 11, such as 50nm-53nm large particle size metal particles, the first ionization voltage of the ionized inert gas can be set to 400V-410V, and the first gas flow rate can be set to 200ml / min-230ml / min. If the gap between the above-mentioned large particle size metal particles needs to reach 40nm-50nm, the first film walking speed can be set to 70m / min-80m / min at the same time.

[0050] For example, in order to make the second metal particles 112 (i.e. small-diameter metal particles), such as 25nm-27nm small-diameter metal particles, of the first conductive layer 11, the second ionization voltage of the ionized inert gas can be set to 300V-350V, and the gas flow rate can be set to 150mn / min-170mn / min. At this time, it is not necessary to form gaps between the small-diameter metal particles. The film flow rate can be set to be slower, such as 50m / min-60m / min. This will allow the small-diameter metal particles to completely fill the gaps between two adjacent large-diameter metal particles on the support layer 10. At the same time, small metal particles will be formed on the large-diameter metal particles, which is beneficial to forming better adhesion between metals after the second conductive layer 12 is deposited.

[0051] Furthermore, this application does not limit the particle size of large-diameter and small-diameter metal particles, as large and small are relative concepts. However, in order to achieve the purpose of this embodiment, the distance between the centers of any two adjacent first metal particles 111 in the first conductive layer 11 should be less than 3nm, so as to avoid affecting the tensile strength of the entire film and the adhesion between the metal layer and the support layer 10 due to excessive distance.

[0052] In some embodiments, after the first metal particles 111 are deposited on the support layer 10 with a first ionization voltage, a first gas flow rate and a first film flow rate, the method further includes: performing an activation treatment on the surface of the first metal particles 111 to activate the surface of the first metal particles 111.

[0053] In this embodiment, after the large-diameter metal particles in the first conductive layer 11 are formed, their surfaces can be activated, for example by using corona discharge or other methods, to activate the surface of the large-diameter metal particles, thereby increasing their adhesion to the small-diameter metal particles in the first conductive layer 11 and firmly connecting the large and small metal particles together.

[0054] Figure 3 This is a schematic diagram of the structure of the second conductive film according to an embodiment of the present invention, as shown below. Figure 3 As shown, in some embodiments, before depositing the first conductive layer 11 on the support layer 10 by magnetron sputtering in a vacuum coating equipment, the method further includes: setting a current converging layer 13 on the support layer 10 by evaporation or magnetron sputtering in a vacuum coating equipment.

[0055] Specifically, the current converging layer 13 can be arranged between the support layer 10 and the first conductive layer 11 by vacuum plating. In order to reduce the resistance, the metal particles in the current converging layer 13 can be tightly packed. In the embodiment, the current converging layer 13 is arranged because the support layer 10 is not conductive, so the support layer 10 has a certain resistance with the first conductive layer 11. When the conductive film in the embodiment is used in a lithium ion battery, after the lithium-attracting metal attracts lithium, the current will also be transmitted. The current converging layer 13 can make the current not only pass through the first metal particles 111 in the first conductive layer 11, but also pass from the current converging layer 13, so as to reduce the resistance of the conductive film prepared by the preparation method of the embodiment and improve the energy density of the battery.

[0056] In addition, the material of the current converging layer 13 can be copper, nickel, silver, gold, aluminum or the like. Preferably, the material has a low resistivity. Of course, the material can also be carbon. Compared with other metal materials, the carbon material has a lower mass, which can improve the energy density of the battery.

[0057] In some embodiments, the gap between two adjacent first metal particles 111 is equal to an integer multiple of the particle size of the second metal particles 112. In the embodiment, the particle size of the first metal particles 111 can be an integer multiple of the particle size of the second metal particles 112, for example, 1 times, 2 times or 3 times, etc. In this way, the small-particle-size metal particles can be completely embedded in the gap between two adjacent large-particle-size metal particles. Especially when the particle size of the large-particle-size metal particles is 1 times the particle size of the small-particle-size metal particles, the gap between two adjacent large-particle-size metal particles can accommodate one small-particle-size metal particle. Other small-particle-size metal particles can also be easily embedded in the gap between two large-particle-size metal particles, which can fill the gap between two adjacent large-particle-size metal particles and fully contact the large-particle-size metal particles.

[0058] In some embodiments, the first metal particles 111 are lithium-loving metal particles. In this embodiment, the small-diameter metal particles of the first conductive layer 11 can be lithium-loving metals, such as silver (Ag), magnesium (Mg), tin (Sn), and zinc (Zn), etc., as long as they are lithium-loving metals. At the same time, the large-diameter metal particle layer of the first conductive layer 11 can be other non-lithi-loving metals, such as copper. When the conductive film produced using the preparation method of this embodiment is applied to a battery, lithium metal will be uniformly distributed on the support layer 10, so the current will be uniformly distributed on the support layer 10. Lithium metal refers to the lithium metal that needs to be delithiated and intercalated during the operation of the lithium battery. When lithium is intercalated, lithium will be formed on the conductive film. Specifically, lithium metal will enter the gaps between the large-diameter metal particles of the first conductive layer 11 and contact the small-diameter metal particles. Because the small-diameter metal particles are lithium-loving materials, they can also induce lithium ions to form lithium metal at this position. In addition, when the small-diameter metal particles are lithium-loving metals, in order to provide sufficient space for lithium ions to pass through, the gap between two adjacent large-diameter metal particles in the first conductive layer 11 needs to be more than twice the diameter of the small-diameter metal particles.

[0059] In this embodiment of the invention, since the small-diameter metal particles are lithium-loving metals, when the conductive film is applied to a battery, the lithium-loving metals will combine with the lithium in the battery, which is beneficial for dispersing lithium and preventing lithium from accumulating in one place. Conversely, without lithium-loving materials, lithium ions will randomly embed into the conductive film without any pattern, resulting in chaotic accumulation and the formation of lithium dendrites, which poses a danger. In addition, the conductive film of this embodiment can also be used as a negative electrode current collector. If applied to a lithium battery, a negative electrode active material will be coated on the negative electrode current collector to form a negative electrode sheet. The particle size difference between the large-diameter and small-diameter metal particles in the first conductive layer 11 is also beneficial for the subsequent coating of the negative electrode active material.

[0060] Figure 4 This is a schematic diagram of the structure of the third conductive film according to an embodiment of the present invention, as shown below. Figure 4 As shown, in some embodiments, after depositing the first conductive layer 11 on the support layer 10 using magnetron sputtering in a vacuum coating apparatus, the method further includes: depositing a second conductive layer 12 on the surface of the first conductive layer 11 using magnetron sputtering in a vacuum coating apparatus; wherein the second conductive layer 12 includes third metal particles 121 and fourth metal particles 122, and the particle size of the third metal particles 121 is larger than the particle size of the fourth metal particles 122. In this embodiment, by providing the second conductive layer 12 on the surface of the first conductive layer 11, the thickness of the metal layer on the support layer 10 is increased.

[0061] In some embodiments, the second conductive layer 12 is deposited on the surface of the first conductive layer 11 in a vacuum coating device by magnetron sputtering, specifically including: depositing third metal particles 121 on the surface of the first conductive layer 11 at a third ionization voltage, a third gas flow rate and a third deposition rate; the third metal particles 121 are inlaid between two adjacent first metal particles 111 and above the second metal particles 112; depositing fourth metal particles 122 on the support layer 10 at a fourth ionization voltage, a fourth gas flow rate and a fourth deposition rate, the fourth metal particles 122 are between two adjacent third metal particles 121; wherein the third ionization voltage is less than the fourth ionization voltage, the third gas flow rate is greater than the fourth gas flow rate, and the third deposition rate is greater than the fourth deposition rate. In addition, in order to avoid the influence of the distance on the tensile strength of the entire film and the adhesion between the conductive layer and the support layer 10, the distance between the particle core of the third metal particles 121 and the particle core of the first metal particles 111 adjacent or in contact with the third metal particles 121 should be less than 3 nm.

[0062] Similarly, in the present embodiment, the second conductive layer 12 is also deposited on the surface of the first conductive layer 11 in a vacuum coating device by magnetron sputtering, and the deposition method of the second conductive layer 12 is similar to that of the first conductive layer 11. By controlling the third ionization voltage, the third gas flow rate and the third deposition rate, the third metal particles 121 are deposited on the first conductive layer 11, so that the size of the third metal particles 121 is just located in the accommodating cavity composed of two adjacent first metal particles 111 and the second metal particles 112 located between the two first metal particles 111. The accommodating cavity is a containing space surrounded by the apex of the second metal particles and the first metal particles 111 on the left and right sides, so that the third metal particles 121 are in full contact with the first metal particles 111 and the second metal particles 112 in the first conductive layer 11 adjacent to the third metal particles 121. At the same time, due to the atomic migration effect, the bonding force between the third metal particles 121 and the first metal particles 111 and the second metal particles 112 can be stronger.

[0063] Then the fourth ionization voltage, the fourth gas flow speed and the fourth film walking speed are controlled to deposit fourth metal particles 122 in the first conductive layer 11 with the third metal particles 121 deposited, the fourth metal particles 122 are deposited between the adjacent two third metal particles 121 and in the accommodating cavity formed by the vertex of the first metal particle 111 and the two third metal particles 121 on the left and right of the first metal particle 111, so that the fourth metal particles 122 are just in full contact with the third metal particles 121 and the first metal particles 111, and meanwhile, due to the atomic migration effect, the binding force between the fourth metal particles 122 and the third metal particles 121 and the first metal particles 111 is stronger, thereby improving the adhesion between the first conductive layer 11 and the second conductive layer 12.

[0064] In some embodiments, before the surface of the first conductive layer 11 is layered with the second conductive layer 12 in the vacuum coating device by the way of magnetron sputtering coating, the surface of the first conductive layer 11 is further subjected to an activation treatment to activate the surfaces of the first metal particles 111 and the second metal particles 112. In this embodiment, the activation of the surfaces of the first metal particles 111 and the second metal particles 112 can make the third metal particles 121 and the fourth metal particles 122 in the second conductive layer 12 have a higher adhesion with the metal particles of the first conductive layer 11, so that the metal particles of the first conductive layer 11 and the second conductive layer 12 are tightly connected together.

[0065] As shown in FIG. 1, Figure 2 The conductive film provided in this embodiment is prepared by the preparation method described in the above embodiments, and includes a support layer 10 and a first conductive layer 11 arranged on the surface of the support layer 10. The first conductive layer 11 includes first metal particles 111 and second metal particles 112, which are alternately arranged on the surface of the support layer 10. The particle size of the first metal particles 111 is larger than that of the second metal particles 112.

[0066] The first conductive layer 11 in this embodiment includes two kinds of metal particles with different particle sizes, i.e., the first metal particles 111 and the second metal particles 112, and the second metal particles 112 are deposited in the gaps between the first metal particles 111, so that the two kinds of particles with different particle sizes in the first conductive layer 11 have a higher binding force, and the metal particles in the first conductive layer 11 are more tightly combined. This is not only conducive to reducing the square resistance, but also compared with the conductive layer produced by using the same kind of process, the amount of metal used in the conductive film produced by this method is less, and the cost is lower.

[0067] As shown in FIG. 1, Figure 4As shown, in some embodiments, in order to increase the thickness of the metal layer on the support layer 10, a second conductive layer 12 can be deposited on the surface of the first conductive layer 11, and the second conductive layer 12 also includes third metal particles 121 and fourth metal particles 122, the particle size of the third metal particles 121 is greater than the particle size of the fourth metal particles 122, and in the embodiment, the particle size of each metal particle can be flexibly controlled, for example, the ionization voltage, gas flow rate and film running speed can be controlled to control the size of the metal particles, and the gap between adjacent two metal particles, so that the combination of the first metal particles 111, the second metal particles 112, the third metal particles 121 and the fourth metal particles 122 is more compact, of course, the embodiment of the present application is not limited to the first conductive layer 11 and the second conductive layer 12, based on the idea of the present application, more conductive layers can be provided, which can be determined according to the specific circumstances.

[0068] In the description of the embodiments of the present application, it should be noted that the terms "upper, lower, inner and outer" and the like indicate the orientation or positional relationship based on the orientation or positional relationship shown in the drawings, and are only for the purpose of facilitating the description of the present application and simplifying the description, and do not indicate or imply that the device or element referred to must have a particular orientation, be constructed and operated in a particular orientation, therefore it cannot be understood as a limitation of the present application. In addition, the terms "first, second or third" are only for the purpose of description, and cannot be understood as indicating or implying relative importance.

[0069] Unless otherwise specifically defined and limited, the terms "mounting, connecting, connecting" in the embodiments of the present application should be understood broadly, for example: it can be fixedly connected, detachably connected or integrally connected; it can also be mechanically connected, electrically connected or directly connected, it can also be indirectly connected through an intermediate medium, and it can also be the communication between two elements. For those skilled in the art, the specific meaning of the above terms in the present application can be understood according to the specific circumstances.

[0070] Although the present application has been described with reference to the preferred embodiments, various modifications can be made to it and equivalent parts can be substituted for the parts thereof without departing from the scope of the present application. In particular, the technical features mentioned in each embodiment can be combined in any way as long as there is no structural conflict. The present application is not limited to the specific embodiments disclosed herein, but includes all technical solutions falling within the scope of the claims.

Claims

1. A method for producing a conductive film, characterized by, The method comprises: acquiring a support layer; depositing a first conductive layer on the support layer by using a magnetron sputtering method in a vacuum coating device; wherein, the first conductive layer comprises first metal particles and second metal particles, the particle size of the first metal particles is larger than the particle size of the second metal particles, and the first metal particles and the second metal particles are alternately arranged on the surface of the support layer; the method of depositing the first conductive layer on the support layer by using the magnetron sputtering method in the vacuum coating device specifically comprises: depositing the first metal particles on the support layer at a first ionization voltage, a first gas flow rate and a first film deposition rate; depositing the second metal particles on the support layer at a second ionization voltage, a second gas flow rate and a second film deposition rate, the second metal particles being located between adjacent two first metal particles; wherein, the first ionization voltage is less than the second ionization voltage, the first gas flow rate is greater than the second gas flow rate, and the first film deposition rate is greater than the second film deposition rate; the gap between adjacent two first metal particles is an integer multiple of the particle size of the second metal particles.

2. The method of claim 1, wherein the conductive film is prepared by the steps of: After the method of depositing the first metal particles on the support layer at the first ionization voltage, the first gas flow rate and the first film deposition rate, the method further comprises: activating the surface of the first metal particles to activate the surface of the first metal particles.

3. The method of claim 1, wherein the conductive film is prepared by the steps of: Before the method of depositing the first conductive layer on the support layer by using the magnetron sputtering method in the vacuum coating device, the method further comprises: depositing a current converging layer on the support layer by using an evaporation or magnetron sputtering method in the vacuum coating device.

4. The method of claim 1-3, wherein the conductive film is prepared by the steps of: The first metal particles are lithium-philic metal particles.

5. The method for preparing a conductive film according to claim 4, characterized in that, After the method of depositing the first conductive layer on the support layer by using the magnetron sputtering method in the vacuum coating device, the method further comprises: depositing a second conductive layer on the surface of the first conductive layer by using a magnetron sputtering method in a vacuum coating device; wherein, the second conductive layer comprises third metal particles and fourth metal particles, the particle size of the third metal particles is larger than the particle size of the fourth metal particles.

6. The method for preparing a conductive film according to claim 5, characterized in that, The method of depositing the second conductive layer on the surface of the first conductive layer by using the magnetron sputtering method in the vacuum coating device specifically comprises: depositing the third metal particles on the surface of the first conductive layer at a third ionization voltage, a third gas flow rate and a third film deposition rate; the third metal particles are embedded between adjacent two first metal particles and located above the second metal particles; depositing the fourth metal particles on the support layer at a fourth ionization voltage, a fourth gas flow rate and a fourth film deposition rate, the fourth metal particles being located between adjacent two third metal particles; wherein, the third ionization voltage is less than the fourth ionization voltage, the third gas flow rate is greater than the fourth gas flow rate, and the third film deposition rate is greater than the fourth film deposition rate.

7. The method for preparing a conductive film according to claim 6, characterized in that, Before the method of depositing the second conductive layer on the surface of the first conductive layer by using the magnetron sputtering method in the vacuum coating device, the method further comprises: The surface of the first conductive layer is activated to activate the surface of the first metal particles and the second metal particles.

8. A conductive film characterized by The conductive film is prepared by the method of any one of claims 1-7, and comprises a support layer and a first conductive layer arranged on the surface of the support layer. The first metal particles and the second metal particles are alternately arranged on the surface of the support layer, wherein the particle size of the first metal particles is larger than the particle size of the second metal particles.

Images