A chemical vapor deposition device with uniform product adhesion

Abstract

The present invention provides a chemical vapor deposition device with uniform product adhesion, comprising a device body, the device body including an inner cavity, a reaction chamber provided in the inner cavity, the reaction chamber including an air inlet channel, a deposition chamber, and an exhaust channel connected in sequence; one side of the deposition chamber is connected to the air inlet channel, an air inlet pipe for supplying gas raw materials is horizontally provided in the air inlet channel, and a heating pipe is provided around the outer surface of the air inlet pipe; a heating table is provided in the deposition chamber, a substrate is placed on the heating table, and the heating table is inclined toward the air inlet channel; the side of the deposition chamber away from the air inlet channel is connected to the exhaust channel, and a heating net is provided at the junction of the exhaust channel and the deposition chamber; a flow equalization device is provided above the deposition chamber. The present application solves the problem in the prior art that it is difficult to maintain uniform gas density in existing chemical vapor deposition equipment, resulting in uneven film thickness formed on the substrate.

Description

Technical Field

[0001] The present invention relates to the technical field of chemical vapor deposition, and in particular to a chemical vapor deposition device with uniform product attachment. Background Art

[0002] Chemical vapor deposition refers to the process of supplying one or more compounds or elemental gases containing the elements that constitute the thin film to a substrate, and generating the desired thin film through gas phase action or chemical reaction on the substrate.

[0003] Chemical vapor deposition (CVD) equipment plays a crucial role in the CVD process. In existing CVD equipment, a mixed gas is introduced through a gas inlet at one end of the reactor by a gas inlet device and extracted from the other end by a gas extraction device. This creates a single-directional gas path throughout the reactor, making it difficult to maintain uniform gas density within the reactor, resulting in uneven film thickness on the substrate. Therefore, there is an urgent need for a CVD equipment that can form uniform thin films on substrates. Summary of the Invention

[0004] In response to the shortcomings of the existing technology, the present invention provides a chemical vapor deposition device with uniform product adhesion, which solves the problem in the existing technology that the gas density inside the existing chemical vapor deposition device is difficult to maintain uniformity, resulting in uneven film thickness formed on the substrate.

[0005] The above technical objectives of the present invention are achieved through the following technical solutions:

[0006] A chemical vapor deposition device with uniform product attachment, characterized in that: the device body includes an inner cavity, a reaction chamber is provided in the inner cavity, and the reaction chamber includes an air inlet channel, a deposition chamber and an exhaust channel connected in sequence; one side of the deposition chamber is connected to the air inlet channel, and an air inlet pipe for supplying gas raw materials is horizontally arranged in the air inlet channel, and a heating pipe is provided around the outer surface of the air inlet pipe; a heating table is provided in the deposition chamber, and a substrate is placed on the heating table, and the heating table is inclined toward the air inlet channel; the side of the deposition chamber away from the air inlet channel is connected to the exhaust channel, and a heating net is provided at the junction of the exhaust channel and the deposition chamber; a flow equalizing device is provided above the deposition chamber.

[0007] The present invention is further configured as follows: the heating platform includes a heating base plate and a heating cover plate, the surface of the heating base plate is provided with a serpentine heating groove, and a serpentine heating tube is installed in the serpentine heating groove; the heating cover plate is arranged above the heating base plate, the heating cover plate covers the serpentine heating groove, and the substrate is placed on the heating cover plate.

[0008] The present invention is further configured as follows: the heating base plate is provided with a boss, the serpentine heating groove is located in the boss, the heating cover plate is provided on the boss, a gap space is provided between the boss and the heating cover plate, and the inner side surface of the heating cover plate is provided with a heat absorbing flat plate, and the heat absorbing flat plate is located in the gap space.

[0009] The present invention is further configured as follows: an arc-shaped reflection plate is fixedly provided at the bottom of the serpentine heating tank, and the serpentine heating tubes are located between the heat-absorbing flat plate and the arc-shaped reflection plate.

[0010] The present invention is further configured as follows: a high-frequency induction coil is provided on the outer surface of the air intake passage, and the high-frequency induction coil is located between the section where the mouth of the air intake pipe is located and the section where the opening of the air intake passage is located.

[0011] The present invention is further configured as follows: a base platform is provided in the deposition chamber, a support platform is hinged on the upper surface of the base platform through a rotating shaft, the heating platform is arranged at the upper end of the support platform, and an adjustment mechanism for adjusting the inclination angle of the heating platform is also provided on the base platform.

[0012] The present invention is further configured as follows: the adjustment mechanism includes a sliding groove, the length direction of the sliding groove is perpendicular to the length direction of the rotating shaft, and a sliding block is provided in the sliding groove; a screw rod is threadedly connected to the base platform, the screw rod is inserted into the sliding groove from the side of the base platform, and the length direction of the screw rod is the same as the length direction of the screw rod, one end of the screw rod is connected to a bearing, and the bearing is fixedly connected to the sliding block; a push rod is provided at the upper end of the sliding block, and the end of the push rod away from the sliding block is against the lower surface of the heating platform.

[0013] The present invention is further configured such that a ball is provided at one end of the push rod away from the sliding block.

[0014] The present invention is further configured as follows: the flow balancing device includes a flow balancing disk, the flow balancing disk is a spiral air pipe, the lower surface of the spiral air pipe is evenly provided with air outlet holes, and the spiral air pipe is used to supply the same gas raw material.

[0015] The present invention is further configured such that a metal bellows is provided at the upper end of the spiral air pipe.

[0016] The present invention has the following beneficial effects:

[0017] The chemical vapor deposition process is realized by setting an air inlet channel, a deposition chamber and an exhaust channel. The heating tube arranged around the outer surface of the air inlet pipe can preheat the gas raw material, so that the gas raw material will not affect the overall temperature of the substrate when it reaches the heating table. By tilting the heating table toward the air inlet channel, the surface of the substrate can be directly contacted by the gas raw material, avoiding the problem of low density of gas raw material at the end of the substrate due to consumption of the gas raw material in the early stage. By setting a heating network, the problem of uneven flow rate of the gas raw material caused by the change of temperature of the gas raw material due to the loss of heating from the heating table is avoided. By setting a flow equalizing device, the airflow direction and gas density at the deposition chamber can be flexibly adjusted, and ultimately the effect of uniform deposition of thin film can be achieved. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] Figure 1 This is a schematic structural diagram of an embodiment of the present application;

[0019] Figure 2 for Figure 1 Enlarged view of point A in the middle;

[0020] Figure 3 This is a schematic diagram of the structure of the current equalizing disk in the embodiment of the present application;

[0021] In the above drawings: 1. inner cavity; 2. reaction chamber; 3. air inlet channel; 4. deposition chamber; 5. exhaust channel; 6. air inlet pipe; 7. heating tube; 8. high-frequency induction coil; 9. base platform; 10. support platform; 11. heating platform; 12. heating bottom plate; 13. heating cover plate; 14. serpentine heating tank; 15. substrate; 16. serpentine heating tube array; 17. gap space; 18. heat absorbing plate; 19. arc-shaped reflection plate; 20. heating net; 21. flow equalizing plate; 22. air outlet; 23. metal bellows; 24. sliding groove; 25. sliding block; 26. screw rod; 27. bearing; 28. push rod; 29. ​​ball; 30. equipment body. DETAILED DESCRIPTION

[0022] The technical solution of the present invention is further described below with reference to the accompanying drawings and embodiments.

[0023] A chemical vapor deposition apparatus for uniform product deposition includes an apparatus body 30, within which is disposed an inner cavity 1. A reaction chamber 2 is disposed within the inner cavity 1 and includes an air inlet channel 3, a deposition chamber 4, and an exhaust channel 5, which are interconnected in sequence. A chamber door is provided on the apparatus body 30, which, when opened, exposes the interior of the deposition chamber 4.

[0024] One side of the deposition chamber 4 is interconnected with the air inlet channel 3. An air inlet pipe 6 is horizontally provided in the air inlet channel 3. The length direction of the air inlet pipe 6 is the same as that of the air inlet channel 3. The air inlet pipe 6 is used to supply gas raw materials. A heating pipe 7 is also arranged around the outer surface of the air inlet pipe 6. The heating pipe 7 is used to preheat the gas raw materials that are about to enter the deposition chamber 4, so that the gas raw materials will not affect the overall temperature of the substrate 15 when they arrive in the deposition chamber 4. A high-frequency induction coil 8 is provided on the outer surface of the air inlet channel 3. The high-frequency induction coil 8 is located between the cross-section where the mouth of the air inlet pipe 6 is located and the cross-section where the opening of the air inlet channel 3 is located. The high-frequency induction coil 8 accelerates the diffusion of reactants on the surface by generating plasma, thereby increasing the film formation speed. At the same time, the plasma can produce a sputtering cleaning effect, enhance the adhesion of the film, enhance the collision scattering effect, and make the thickness of the formed film uniform.

[0025] A base platform 9 is installed at the bottom of the deposition chamber 4. A support platform 10 is hinged on the upper surface of the base platform 9 through a rotating shaft. A heating platform 11 is fixedly welded to the end of the support platform 10 away from the base platform 9. The heating platform 11 is tilted toward the air inlet channel 3. The heating platform 11 includes a heating base plate 12 and a heating cover plate 13. A serpentine heating groove 14 is provided on the surface of the heating base plate 12. A serpentine heating tube 16 is installed in the serpentine heating groove 14. The heating cover plate 13 is arranged above the heating base plate 12, and the heating cover plate 13 covers the serpentine heating groove 14. The substrate 15 is placed on the heating cover plate 13. The above structure is specifically configured as follows: the heating base plate 12 is provided with a boss, the serpentine heating groove 14 is located in the boss, the heating cover plate 13 is covered on the boss, and the boss serves to limit the heating cover plate 13. There is a gap space 17 between the boss and the heating cover plate 13 . A heat absorbing flat plate 18 is welded to the inner side surface of the heating cover plate 13 . The heat absorbing flat plate 18 is located in the gap space 17 .

[0026] An arc-shaped reflecting plate 19 is welded to the bottom of the serpentine heating tank 14 , and the serpentine heating tubes 16 are located between the heat-absorbing flat plate 18 and the arc-shaped reflecting plate 19 .

[0027] The side of the deposition chamber 4 away from the air inlet channel 3 is connected to the exhaust channel 5, and a heating net 20 is provided at the junction of the exhaust channel 5 and the deposition chamber 4; by setting the heating net 20, the temperature of the gas raw material is avoided to change due to the loss of heating by the heating platform 11, which causes the air flow to change and the flow rate of the gas raw material to be uneven.

[0028] A flow equalization device is provided above the deposition chamber 4. The flow equalization device comprises a flow equalization disk 21, which is a spiral air pipe with air outlet holes 22 evenly opened on its lower surface. The spiral air pipe is used to supply the same gas raw material, and a metal bellows 23 is provided at the upper end of the spiral air pipe.

[0029] The base 9 is also provided with an adjustment mechanism for adjusting the inclination angle of the heating platform 11. The adjustment mechanism includes a sliding groove 24, the length of which is perpendicular to the length of the rotating shaft, and a sliding block 25 is disposed within the sliding groove 24. A screw rod 26 is threadedly connected to the base 9, extending from the side of the base 9 into the sliding groove 24. The length of the screw rod 26 is the same as that of the screw rod 26. One end of the screw rod 26 is connected to a bearing 27, which is fixedly connected to the sliding block 25. A push rod 28 is provided at the upper end of the sliding block 25. The end of the push rod 28 away from the sliding block 25 abuts against the lower surface of the heating platform 11. Specifically, a ball bearing 29 is disposed at the end of the push rod 28 away from the sliding block 25. The ball bearing 29 abuts against the lower surface of the heating platform 11. By tilting the heating platform 11 toward the gas inlet channel 3, the surface of the substrate 15 can be directly contacted by the gas raw material, avoiding the problem of low density of the gas raw material at the end of the substrate 15 due to the consumption of the gas raw material in the early stage.

[0030] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention and are not limiting. Although the present invention has been described in detail with reference to the preferred embodiments, those skilled in the art should understand that the technical solutions of the present invention may be modified or replaced by equivalents without departing from the purpose and scope of the technical solutions of the present invention, which should all be included in the scope of the claims of the present invention.

Claims

1. A chemical vapor deposition device for uniform product adhesion, comprising a device body (30), characterized in that: The device body (30) comprises an inner cavity (1), a reaction chamber (2) is provided in the inner cavity (1), and the reaction chamber (2) comprises an air inlet channel (3), a deposition chamber (4), and an exhaust channel (5) which are connected in sequence; One side of the deposition chamber (4) is connected to the air inlet channel (3), and an air inlet pipe (6) for supplying gas raw materials is horizontally arranged in the air inlet channel (3), and a heating pipe (7) is arranged around the outer surface of the air inlet pipe (6); A heating platform (11) is provided in the deposition chamber (4), and a substrate (15) is placed on the heating platform (11), and the heating platform (11) is arranged at an angle toward the air inlet channel (3); the heating platform (11) comprises a heating base plate (12) and a heating cover plate (13), and a serpentine heating groove (14) is provided on the surface of the heating base plate (12), and a serpentine heating tube (16) is installed in the serpentine heating groove (14); the heating cover plate (13) is arranged above the heating base plate (12), and the heating cover plate (13) covers the serpentine heating groove (14), and the substrate (15) is placed on the heating cover plate (13); A base platform (9) is provided in the deposition chamber (4), a support platform (10) is hingedly provided on the upper surface of the base platform (9) via a rotating shaft, the heating platform (11) is arranged at the upper end of the support platform (10), and an adjustment mechanism for adjusting the inclination angle of the heating platform (11) is also provided on the base platform (9); The side of the deposition chamber (4) away from the air inlet channel (3) is connected to the exhaust channel (5), and a heating net (20) is provided at the junction of the exhaust channel (5) and the deposition chamber (4); A flow balancing device is provided above the deposition chamber (4); the flow balancing device comprises a flow balancing disk (21), the flow balancing disk (21) is a spiral air pipe, the lower surface of the spiral air pipe is evenly provided with air outlet holes (22), and the spiral air pipe is used to supply the same gas raw material; the upper end of the spiral air pipe is provided with a metal bellows (23).

2. The chemical vapor deposition apparatus for uniform product adhesion according to claim 1, wherein: The heating base plate (12) is provided with a boss, the serpentine heating groove (14) is located in the boss, the heating cover plate (13) is covered on the boss, a gap space (17) is present between the boss and the heating cover plate (13), and a heat absorbing flat plate (18) is provided on the inner side surface of the heating cover plate (13), and the heat absorbing flat plate (18) is located in the gap space (17).

3. The chemical vapor deposition apparatus for uniform product adhesion according to claim 2, wherein: An arc-shaped reflection plate (19) is fixedly provided at the bottom of the serpentine heating tank (14), and the serpentine heating tubes (16) are located between the heat-absorbing flat plate (18) and the arc-shaped reflection plate (19).

4. The chemical vapor deposition apparatus for uniform product adhesion according to claim 1, wherein: A high-frequency induction coil (8) is provided on the outer surface of the air intake passage (3), and the high-frequency induction coil (8) is located between the cross section where the mouth of the air intake pipe (6) is located and the cross section where the opening of the air intake passage (3) is located.

5. The chemical vapor deposition apparatus for uniform product adhesion according to claim 1, wherein: The adjusting mechanism comprises a sliding groove (24), the length direction of the sliding groove (24) is perpendicular to the length direction of the rotating shaft, and a sliding block (25) is provided in the sliding groove (24); a screw rod (26) is threadedly connected to the base platform (9), the screw rod (26) is inserted into the sliding groove (24) from the side of the base platform (9), and the length direction of the screw rod (26) is the same as the length direction of the screw rod (26), one end of the screw rod (26) is connected to a bearing (27), and the bearing (27) is fixedly connected to the sliding block (25); a push rod (28) is provided at the upper end of the sliding block (25), and the end of the push rod (28) away from the sliding block (25) is against the lower surface of the heating platform (11).

6. The chemical vapor deposition apparatus for uniform product adhesion according to claim 5, characterized in that: A ball (29) is provided at one end of the push rod (28) away from the sliding block (25).

Images