Reactor and growth apparatus

Abstract

The embodiment of the application provides a reactor and a growth device, the reactor body has a reaction chamber in the inside, the reactor body is provided with a gas inlet and a gas outlet on the opposite two side walls respectively, the gas inlet and the gas outlet are communicated with the reaction chamber, the reaction chamber is divided into a first chamber and a second chamber, the gas inlet comprises a first gas inlet and a second gas inlet, the first gas inlet and the gas outlet are communicated with the first chamber respectively, the second gas inlet is communicated with the second chamber, and a plurality of flow control through holes for communicating the first chamber and the second chamber are arranged between the first chamber and the second chamber, so that the reaction conversion rate of the reaction gas and the metal source can be improved, and the growth rate of the crystal can be improved.

Description

TECHNICAL FIELD

[0001] Embodiments of the present application relate to the technical field of semiconductor technology, and particularly relate to a reactor and a growth device. BACKGROUND

[0002] In the development of semiconductor science and technology, vapor phase epitaxy plays an important role. Vapor phase epitaxy is a method for growing a single crystal thin layer, which refers to depositing a semiconductor material on a single crystal wafer in a gaseous state, so as to grow a single crystal layer with a required thickness and resistivity along the crystal axis direction of the single crystal wafer. Generally, before growing a single crystal layer by vapor phase epitaxy, for example, before growing a group III wide band gap nitride semiconductor material by using a vapor phase epitaxy method, a halide gas or a halogen gas needs to be reacted with a group III metal source in a reactor to generate a metal-containing precursor, and then the metal-containing precursor is transported by a carrier gas (such as nitrogen or hydrogen) to a substrate surface to react with ammonia to generate a nitride semiconductor material.

[0003] In the prior art, when the halide gas or the halogen gas is reacted with the group III metal source in the reactor to generate the metal-containing precursor, a reactor generally used is a cylindrical reactor, which includes a gas inlet pipe, a cylindrical container and a gas outlet pipe. The gas inlet pipe includes a gas inlet connecting pipe and a spiral jet pipe, and the spiral jet pipe is located in the cylindrical container. The reaction gas (such as the halide gas or the halogen gas) is introduced into the cylindrical container from the gas inlet pipe, reacts with the surface metal of the metal source in the cylindrical container, and then the generated product (the metal-containing precursor) and the unreacted gas are output from the gas outlet pipe to the outside of the cylindrical container.

[0004] However, when the above reactor is used, the reaction conversion rate of the reaction gas and the metal source is low, thereby resulting in a low growth rate of the crystal. SUMMARY

[0005] Embodiments of the present application provide a reactor and a growth device, which can improve the reaction conversion rate of the reaction gas and the metal source, thereby improving the growth rate of the crystal.

[0006] A first aspect of embodiments of the present application provides a reactor, which at least includes: a reactor body; an internal reaction chamber of the reactor body, and opposite two side walls of the reactor body are respectively provided with a gas inlet and a gas outlet, and the gas inlet and the gas outlet are both in communication with the reaction chamber; the reaction chamber is divided into a first chamber and a second chamber, the gas inlet includes a first gas inlet and a second gas inlet, the first gas inlet and the gas outlet are respectively in communication with the first chamber, and the second gas inlet is in communication with the second chamber; and a plurality of flow control through holes are arranged between the first chamber and the second chamber to communicate the first chamber and the second chamber.

[0007] The reactor provided by the embodiment of the present application is characterized in that different gas inlets are arranged on the reactor body, the first gas inlet is communicated with the first chamber, the second gas inlet is communicated with the second chamber, and the first chamber and the second chamber are communicated through a plurality of flow control through holes. In this way, the gas entering the second chamber through the second gas inlet can be sprayed into the first chamber through the plurality of flow control through holes to form a dense gas curtain layer, so that the reaction gas entering the first chamber through the second gas inlet can be fully contacted with the metal source in the first chamber, thereby effectively improving the reaction conversion efficiency of the reaction gas and the metal source and improving the growth rate of the crystal to a certain extent.

[0008] In a possible implementation, the second chamber is located above the first chamber. In this way, when the gas entering the second chamber through the second gas inlet is sprayed into the first chamber through the plurality of flow control through holes, a gas curtain layer from top to bottom can be formed, and the gas in the second chamber can be sprayed into the first chamber from top to bottom through the plurality of flow control through holes, so as to generate a greater impact on the reaction gas entering the first chamber through the second gas inlet, thereby enabling the reaction gas to be more fully contacted with the metal source in the first chamber.

[0009] In a possible implementation, a first baffle plate is arranged between the first chamber and the second chamber, and the first baffle plate is provided with a plurality of flow control through holes to communicate the first chamber and the second chamber. By arranging the first baffle plate between the first chamber and the second chamber, the reaction chamber can be divided into two chambers, and by arranging the plurality of flow control through holes on the first baffle plate, the first chamber and the second chamber can be communicated, which is simple and easy to implement.

[0010] In a possible implementation, the plurality of flow control through holes are uniformly and spacedly distributed on the first baffle plate, or the plurality of flow control through holes are spacedly distributed on the first baffle plate, and the density of the flow control through holes gradually increases from one end of the first baffle plate close to the gas inlet to the other end of the first baffle plate close to the gas outlet, or the density of the flow control through holes gradually decreases from one end of the first baffle plate close to the gas inlet to the other end of the first baffle plate close to the gas outlet.

[0011] In this way, when the gas in the second chamber is sprayed into the first chamber through the plurality of flow control through holes, a relatively uniform gas curtain layer can be formed, so that the gas in the second chamber uniformly impacts the reaction gas entering the first chamber through the second gas inlet. Alternatively, when the gas in the second chamber is sprayed into the first chamber through the plurality of flow control through holes, in the direction from the end of the first baffle plate close to the gas inlet to the end of the first baffle plate close to the gas outlet, the gas in the second chamber forms a gas curtain layer that becomes denser and denser, thereby producing an impact on the reaction gas entering the first chamber through the second gas inlet. Alternatively, when the gas in the second chamber is sprayed into the first chamber through the plurality of flow control through holes, in the direction from the end of the first baffle plate close to the gas outlet to the end of the first baffle plate close to the gas inlet, the gas in the second chamber forms a gas curtain layer that becomes denser and denser, thereby producing an impact on the reaction gas entering the first chamber through the second gas inlet. Alternatively, the specific distribution of the plurality of flow control through holes on the first baffle plate can also be flexibly set according to the needs of the actual application scenario.

[0012] In a possible implementation, the diameter of the flow control through hole is 50 nm-500 um.

[0013] In a possible implementation, the diameter of the flow control through hole is 20 um-80 um. By setting the diameter of the flow control through hole to be relatively small, the gas entering the second chamber can form a relatively dense gas curtain layer when sprayed into the first chamber through the plurality of flow control through holes, so that the reaction gas can more fully contact the metal source in the first chamber.

[0014] In a possible implementation, the distance between two adjacent flow control through holes in the plurality of flow control through holes is 1-3 mm. By setting the distance between two adjacent flow control through holes in the plurality of flow control through holes to be relatively small, the spacing between the two adjacent flow control through holes can be reduced, so that the gas entering the second chamber can form a more dense gas curtain layer when sprayed into the first chamber through the plurality of flow control through holes, so that the reaction gas can more fully contact the metal source in the first chamber.

[0015] In a possible implementation, each flow control through hole extends to form an extension on the side facing the first chamber. By forming an extension on the side of each flow control through hole facing the first chamber, a spout type structure can be formed at the position of each flow control through hole, so that when the gas in the second chamber enters the first chamber through the spout type structure, a greater impact on the reaction gas in the first chamber can be produced, so that the reaction gas can more fully contact the metal source in the first chamber.

[0016] In a possible implementation, the cross-sectional shape of the extension is the same as the shape of the flow control through hole.

[0017] In a possible implementation, the extension length of the extension part is 1-3 mm.

[0018] In a possible implementation, a second baffle is arranged between the reaction chamber and the gas outlet; one end of the second baffle is connected to the lower bottom wall of the reactor body, and the other end of the second baffle and the upper bottom wall of the reactor body form a first gap.

[0019] By arranging the second baffle between the reaction chamber and the gas outlet, one end of the second baffle is connected to the lower bottom wall of the reactor body, and the other end of the second baffle and the upper bottom wall of the reactor body form a first gap, the reaction gas that is not completely reacted in the first chamber and the metal source vapor in the first chamber are blocked by the second baffle to form a vortex when encountering the second baffle, so that the reaction gas that is not completely reacted in the first chamber and the metal source vapor in the first chamber can be more fully contacted and reacted, and the generated gas flows out of the reaction chamber through the first gap.

[0020] In a possible implementation, the reaction chamber further has at least one channel, an inlet of the channel is connected to the first chamber, and an outlet of the channel is connected to the gas outlet.

[0021] By arranging the at least one channel in the reaction chamber, the inlet of the channel is connected to the first chamber, and the outlet of the channel is connected to the gas outlet, the flow path in the reaction chamber can be increased, so that the reaction gas that is not completely reacted in the first chamber and the metal source vapor in the first chamber can further react in the channel, thereby effectively improving the reaction conversion efficiency of the reaction gas and the metal source and improving the growth rate of the crystal to a certain extent.

[0022] In a possible implementation, the reaction chamber has two channels; an inlet of a first channel of the two channels is connected to the first chamber, an outlet of the first channel is connected to an inlet of a second channel of the two channels, and an outlet of the second channel is connected to the gas outlet; and the inlet of the first channel and the outlet of the second channel are located on the same side of the reactor body.

[0023] By arranging the two channels in the reaction chamber, the inlet of the first channel is connected to the first chamber, the outlet of the first channel is connected to the inlet of the second channel, the outlet of the second channel is connected to the gas outlet, and the inlet of the first channel and the outlet of the second channel are located on the same side of the reactor body, the flow path in the reaction chamber can be further increased, and the occupied space of the first channel and the second channel in the reaction chamber can be saved.

[0024] In a possible implementation, at least one of the channels is provided with a flow blocking structure; the channel has a first side wall, a second side wall, an upper bottom wall and a lower bottom wall; the flow blocking structure is fixedly connected to any one, any two or any three of the first side wall, the second side wall, the upper bottom wall and the lower bottom wall, and a second gap is formed between the flow blocking structure and at least one of the first side wall, the second side wall, the upper bottom wall and the lower bottom wall.

[0025] By providing the at least one channel with the flow blocking structure, the reaction gas that is not fully reacted in the first chamber and the metal source vapor in the first chamber are blocked to form a vortex after entering the channel, which can effectively prevent the escape of the reaction gas that is not fully reacted and the metal source vapor, so that the reaction gas that is not fully reacted and the metal source vapor in the first chamber can be more fully reacted, and the gas generated after full reaction can flow out of the reaction chamber through the second gap, thereby ensuring the conversion rate and the crystal growth rate.

[0026] In a possible implementation, the flow blocking structure includes at least one flow blocking body; the flow blocking body is fixedly connected to one of the upper bottom wall and the lower bottom wall of the channel, and the second gap is formed between the flow blocking body and the other of the upper bottom wall and the lower bottom wall of the channel.

[0027] By providing the at least one channel with one or more flow blocking bodies, the flow blocking body is fixedly connected to one of the upper bottom wall and the lower bottom wall of the channel, and the second gap is formed between the flow blocking body and the other of the upper bottom wall and the lower bottom wall of the channel, so that the reaction gas that is not fully reacted and the metal source vapor are blocked to form a vortex after entering the channel, which can effectively prevent the escape of the reaction gas that is not fully reacted and the metal source vapor, so that the reaction gas that is not fully reacted and the metal source vapor in the first chamber can be more fully reacted, and the gas generated after full reaction can flow out of the reaction chamber through the second gap formed between the flow blocking body and the other of the upper bottom wall and the lower bottom wall of the channel, thereby ensuring the conversion rate and the crystal growth rate.

[0028] In a possible implementation, the number of the flow blocking bodies is a plurality, and the plurality of flow blocking bodies are distributed along the extension direction of the channel. By increasing the number of the flow blocking bodies in the channel, the reaction gas that is not fully reacted and the metal source vapor can be further blocked, so that the escape of the reaction gas that is not fully reacted and the metal source vapor can be more effectively prevented, and the reaction gas that is not fully reacted and the metal source vapor in the first chamber can be further fully reacted.

[0029] In a possible implementation, the flow resistance body is a columnar structure.

[0030] In a possible implementation, the flow resistance body is a spiral structure. By arranging the flow resistance body in a spiral structure, the contact area between the outer surface of the flow resistance body and the gas can be increased, so that the flow resistance body can better block the gas.

[0031] In a possible implementation, the axial direction of the flow resistance body is perpendicular to the extension direction of the channel. In this way, the blocking effect of the flow resistance body on the gas in the channel can be further increased.

[0032] In a possible implementation, the reactor is a group III metal source reactor.

[0033] In a possible implementation, the reactor is a gallium source reactor.

[0034] In a possible implementation, the reactor body has liquid gallium in the reaction chamber.

[0035] In a possible implementation, the gas introduced by the first gas inlet of the reactor is a halide gas or a halogen gas.

[0036] In a possible implementation, when the gas introduced by the first gas inlet of the reactor is a halide gas or a halogen gas, the material of the reactor is quartz or corundum. Quartz or corundum can withstand high temperature and resist corrosion of halide gas or halogen gas, so that the reactor can be prevented from being damaged by high temperature or corroded by halide gas or halogen gas.

[0037] In a possible implementation, the gas introduced by the second gas inlet of the reactor is any one or more of hydrogen, argon and nitrogen.

[0038] The second aspect of the embodiments of the present application provides a growth device, which at least includes a growth device and the reactor described in any of the above embodiments; wherein the outlet of the reactor is in communication with the inlet of the growth device.

[0039] The growth device provided by the embodiment of the present application comprises a growth device and a reactor, the outlet of the reactor is connected with the inlet of the growth device, different gas inlets are arranged on the reactor body, the first gas inlet is connected with the first chamber, the second gas inlet is connected with the second chamber, and the first chamber and the second chamber are connected through a plurality of flow control through holes, so that the gas entering the second chamber through the second gas inlet can be sprayed into the first chamber through the plurality of flow control through holes to form a dense gas curtain layer, which can promote the reaction gas entering the first chamber through the second gas inlet to fully contact with the metal source in the first chamber, thereby effectively improving the reaction conversion efficiency of the reaction gas and the metal source. The gas generated in the reactor enters the inlet of the growth device through the gas outlet and further reacts with the substances in the growth device to generate crystals. Since the reaction conversion efficiency of the reactor is improved, the growth rate of the crystals in the growth device can also be improved to a certain extent.

[0040] These and other aspects, implementations and advantages of the exemplary embodiments will become apparent from the detailed description and accompanying drawings, which are discussed below. It should be understood, however, that the description and drawings are intended to illustrate and not define the application of the embodiments of the present application. The scope of the embodiments of the present application will be defined solely by the claims attached hereto. Other aspects and advantages of the embodiments of the present application will be described in the following description, become apparent from the description, or be learned through the practice of the embodiments of the present application. Moreover, aspects and advantages of the embodiments of the present application can be achieved by means and combinations, particularly pointed out in the appended claims. BRIEF DESCRIPTION OF DRAWINGS

[0041] Figure 1 A structural schematic diagram of a reactor provided by an embodiment of the present application is shown in the figure;

[0042] Figure 2 A structural schematic diagram of a reactor provided by an embodiment of the present application is shown in the figure;

[0043] Figure 3 A structural schematic diagram of a reactor provided by an embodiment of the present application is shown in the figure;

[0044] Figure 4 A structural schematic diagram of a reactor provided by an embodiment of the present application is shown in the figure;

[0045] Figure 5 A structural schematic diagram of a reactor provided by an embodiment of the present application is shown in the figure;

[0046] Figure 6 A structural schematic diagram of a reactor provided by an embodiment of the present application is shown in the figure;

[0047] Figure 7 A structural schematic diagram of a reactor provided by an embodiment of the present application is shown in the figure;

[0048] Figure 8 The working process of the reactor provided by an embodiment of the present application is shown in the following.

[0049] Explanation of reference signs:

[0050] 100 - reactor; 1 - reactor body; 10 - reaction chamber; 101 - first chamber; 102 - second chamber; 103 - flow control through hole; 1031 - extension; 104 - first baffle; 105 - channel; 1051 - first channel; 1052 - second channel; 106 - flow resistance structure; 1061 - flow resistance body; 107 - second gap; 20 - gas inlet; 201 - first gas inlet; 202 - second gas inlet; 30 - gas outlet; 40 - second baffle; 50 - first gap; 11 - lower bottom wall of the reactor body; 12 - upper bottom wall of the reactor body. DETAILED DESCRIPTION

[0051] The terms used in the embodiment part of the present application are only used for explaining the specific embodiments of the present application, and are not intended to limit the present application, and the embodiment of the embodiments of the present application will be described in detail below with reference to the drawings.

[0052] Group III wide band gap nitride semiconductor materials, such as gallium nitride (GaN) and aluminum nitride (AlN), have great application prospects in short-wavelength optoelectronic devices and high-frequency high-power electronic devices, and the vapor phase epitaxy method is currently the main method for epitaxial growth of Group III nitride semiconductor materials and preparation of devices thereof. Among them, the hydride vapor phase epitaxy (HVPE) technology has become the mainstream technology for preparing GaN single crystal substrates due to its fast growth rate, simple process and other characteristics. In the HVPE technology, halide gas or halogen gas (such as hydrogen chloride or chlorine) reacts with Group III metal source (such as metallic gallium or aluminum) in the reactor to generate metal-containing precursors (such as gallium chloride or aluminum chloride), which are then transported by a carrier gas (such as nitrogen or hydrogen) to the substrate surface in the growth device and react with ammonia gas in the growth device to generate nitride semiconductor materials. In the HVPE system, the contact reaction time of the source gas and the metal source is directly related to the effective utilization rate of the source gas, the growth rate of the GaN single crystal material, and the epitaxial quality of the crystal.

[0053] In the horizontal HVPE system structure, the gallium boat of the metal reactor is generally a simple semi-cylindrical structure, which includes a gas inlet pipe, a cylindrical container and a gas outlet pipe. The gas inlet pipe includes a gas inlet connecting pipe and a spiral nozzle, and the spiral nozzle is located in the cylindrical container. The halide gas or halogen gas is introduced into the cylindrical container from the gas inlet pipe, reacts with the surface metal of the gallium source in the cylindrical container, and then the reaction product (such as gallium chloride) and the unreacted gas are output from the gas outlet pipe. However, the halide gas or halogen gas directly enters the reaction chamber without complete reaction with the metal gallium source, the reaction conversion rate of the reaction gas and the metal gallium source is low, which makes it difficult to improve the crystal growth rate, and the unreacted halide corrodes the crystal material and interferes with the crystal growth, which seriously affects the crystal quality of the material.

[0054] Therefore, the embodiment of the present application provides a reactor. The reactor body is provided with different gas inlets. The first gas inlet is connected with the first chamber, and the second gas inlet is connected with the second chamber. The first chamber and the second chamber are connected through a plurality of flow control through holes. The gas entering the second chamber through the second gas inlet can be sprayed into the first chamber through the plurality of flow control through holes to form a dense gas curtain layer, which can promote the reaction gas entering the first chamber through the second gas inlet to fully contact with the metal source in the first chamber, thereby effectively improving the reaction conversion efficiency of the reaction gas and the metal source, improving the growth rate of the crystal to a certain extent, and avoiding the problem that the unreacted reaction gas corrodes the crystal material and interferes with the crystal growth, which seriously affects the crystal quality of the material.

[0055] The specific structure of the reactor will be described below with reference to the drawings.

[0056] Embodiment one

[0057] Referring to Figure 1 The embodiment of the present application provides a reactor 100, which at least includes: a reactor body 1, wherein the inside of the reactor body 1 has a reaction chamber 10, and the opposite two side walls of the reactor body 1 are respectively provided with a gas inlet 20 and a gas outlet 30, and the gas inlet 20 and the gas outlet 30 are both connected with the reaction chamber 10.

[0058] Specifically, the reaction chamber 10 is divided into a first chamber 101 and a second chamber 102, the gas inlet 20 includes a first gas inlet 201 and a second gas inlet 202, the first gas inlet 201 and the gas outlet 30 are respectively communicated with the first chamber 101, the second gas inlet 202 is communicated with the second chamber 102, and the first chamber 101 and the second chamber 102 have a plurality of flow control through holes 103 to communicate the first chamber 101 and the second chamber 102.

[0059] In this way, the gas entering the second chamber 102 through the second gas inlet 202 can be sprayed into the first chamber 101 through the plurality of flow control through holes 103 to form a dense gas curtain layer, so as to promote the reaction gas entering the first chamber 101 through the second gas inlet 202 to fully contact with the metal source in the first chamber 101, thereby increasing the contact probability and contact time of the reaction gas and the metal source, and effectively improving the reaction conversion efficiency of the reaction gas and the metal source, and further improving the growth rate of the crystal to a certain extent. Moreover, by spraying into the first chamber 101 through the plurality of flow control through holes 103, the problem of fluctuation of conversion rate and supply amount caused by the gradual decrease of the metal source liquid level due to reaction consumption can be solved. The reactor 100 provided in the embodiment of the present application can still ensure the contact reaction between the reaction gas and the metal source in the case of the decrease of the metal source liquid level, thereby ensuring the process stability.

[0060] In the embodiment of the present application, as shown in Figure 1 The second chamber 102 can be located above the first chamber 101. In this way, when the gas entering the second chamber 102 through the second gas inlet 202 is sprayed into the first chamber 101 through the plurality of flow control through holes 103, a gas curtain layer from top to bottom can be formed, and the gas in the second chamber 102 is sprayed into the first chamber 101 from top to bottom through the plurality of flow control through holes 103, which can produce a greater impact on the reaction gas entering the first chamber 101 through the second gas inlet 202, so that the reaction gas can more fully contact with the metal source in the first chamber 101.

[0061] A first baffle 104 can be arranged between the first chamber 101 and the second chamber 102, and the first baffle 104 has a plurality of flow control through holes 103 to communicate the first chamber 101 and the second chamber 102. By arranging the first baffle 104 between the first chamber 101 and the second chamber 102, the reaction chamber 10 can be divided into two chambers, and by arranging the plurality of flow control through holes 103 on the first baffle 104, the first chamber 101 and the second chamber 102 can be communicated, which is simple and easy to implement.

[0062] The specific distribution mode of the plurality of flow control through holes 103 on the first baffle 104 includes but is not limited to the following possible implementation modes:

[0063] In a possible implementation, the plurality of flow control holes 103 are uniformly distributed on the first baffle 104. In this way, when the gas in the second chamber 102 is sprayed into the first chamber 101 through the plurality of flow control holes 103, a relatively uniform gas curtain layer can be formed, so that the gas in the second chamber 102 uniformly impacts the reaction gas entering the first chamber 101 through the second gas inlet 202.

[0064] In another possible implementation, the plurality of flow control holes 103 are distributed on the first baffle 104, and the density of the flow control holes 103 gradually increases from the end of the first baffle 104 close to the gas inlet 20 to the end of the first baffle 104 close to the gas outlet 30. In this way, when the gas in the second chamber 102 is sprayed into the first chamber 101 through the plurality of flow control holes 103, the gas in the second chamber 102 forms a gas curtain layer that is increasingly dense from the end of the first baffle 104 close to the gas inlet 20 to the end of the first baffle 104 close to the gas outlet 30, so that the gas in the second chamber 102 increasingly densely impacts the reaction gas entering the first chamber 101 through the second gas inlet 202.

[0065] In another possible implementation, the plurality of flow control holes 103 are distributed on the first baffle 104, and the density of the flow control holes 103 gradually increases from the end of the first baffle 104 close to the gas inlet 20 to the end of the first baffle 104 close to the gas outlet 30. In this way, when the gas in the second chamber 102 is sprayed into the first chamber 101 through the plurality of flow control holes 103, the gas in the second chamber 102 forms a gas curtain layer that is increasingly dense from the end of the first baffle 104 close to the gas inlet 20 to the end of the first baffle 104 close to the gas outlet 30, so that the gas in the second chamber 102 increasingly densely impacts the reaction gas entering the first chamber 101 through the second gas inlet 202.

[0066] Of course, in the embodiments of the present application, the specific distribution of the plurality of flow control holes 103 on the first baffle 104 can be flexibly set according to the gas flow control requirements in the actual application scenario, for example, a gradual distribution. The embodiments of the present application do not limit this and are not limited to the above examples.

[0067] In the embodiments of the present application, the diameter of the flow control hole 103 can be 50 nm-500 um. It should be noted that the numerical values and numerical ranges involved in the present application are approximate values, and there can be a certain range of errors due to the manufacturing process, which can be considered negligible by those skilled in the art.

[0068] Further, the diameter of the flow control through hole 103 can be 20-80um. For example, the diameter of the flow control through hole 103 can be 30um, 50um, or 70um, etc. The present application is not limited thereto, and is not limited to the above examples. The diameter of the flow control through hole 103 is set to be small, so that when the gas in the second chamber 102 is sprayed into the first chamber 101 through the plurality of flow control through holes 103, a more dense gas curtain layer is formed, so that the reaction gas can more fully contact the metal source in the first chamber 101.

[0069] In addition, referring to Figure 1 As shown in the figure, the distance L1 between the adjacent two flow control through holes 103 in the plurality of flow control through holes 103 can be 1-3mm. For example, the distance L1 between the adjacent two flow control through holes 103 can be 1.5mm, 2.0mm, or 2.5mm, etc. The present application is not limited thereto, and is not limited to the above examples. The distance between the adjacent two flow control through holes 103 in the plurality of flow control through holes 103 is set to be small, so that the interval between the adjacent two flow control through holes 103 is reduced, so that when the gas in the second chamber 102 is sprayed into the first chamber 101 through the plurality of flow control through holes 103, a more dense gas curtain layer is formed, so that the reaction gas can more fully contact the metal source in the first chamber 101.

[0070] It should be noted that the shape of the flow control through hole 103 can be circular, conical, or square, etc. The present application is not limited thereto, and is not limited to the above examples.

[0071] In the present application, the side of each flow control through hole 103 facing the first chamber 101 can further extend to form an extension 1031. By extending the side of each flow control through hole 103 facing the first chamber 101 to form an extension 1031, a spout type structure can be formed at the position of each flow control through hole 103, so that when the gas in the second chamber 102 enters the first chamber 101 through the spout type structure, a greater impact on the reaction gas in the first chamber 101 can be generated, so that the reaction gas can more fully contact the metal source in the first chamber 101. In addition, the cross-sectional shape of the extension 1031 can be the same as the shape of the flow control through hole 103. That is, when the shape of the flow control through hole 103 is circular, the cross-sectional shape of the extension 1031 can also be circular.

[0072] The extension length of the extension 1031 can be 1-3mm. For example, the extension length of the extension 1031 can be 1.5mm, 2.0mm, or 2.5mm, etc. The present application is not limited thereto, and is not limited to the above examples.

[0073] Referring to Figure 2As shown, the second baffle 40 can be arranged between the reaction chamber 10 and the gas outlet 30, one end of the second baffle 40 is connected with the lower bottom wall 11 of the reactor body, and the other end of the second baffle 40 forms a first gap 50 with the upper bottom wall 12 of the reactor body. In this way, the reaction gas that is not completely reacted in the first chamber 101 and the metal source vapor in the first chamber 101 are blocked by the second baffle 40 to form a vortex when they encounter the second baffle 40, thereby prolonging the residence time of the reaction gas in the reactor body 1. The reaction gas that is not completely reacted in the first chamber 101 and the metal source vapor in the first chamber 101 can be more fully contacted and reacted, and the generated gas can flow out of the reaction chamber 10 through the first gap 50.

[0074] In addition, by arranging the second baffle 40 and adjusting the partial pressure and flow rate of the control gas (the gas entering through the second gas inlet 202), the flow direction and flow field of the reaction gas (the gas entering through the first gas inlet 201) can be effectively changed, the unreacted reaction gas and metal source vapor can be effectively prevented from mixing into the reaction precursor (i.e., the gas generated by the reaction of the reaction gas and the metal source vapor), and the conversion efficiency of the reaction gas into the metal precursor can be greatly reduced, thereby realizing the stability of the conversion efficiency of the metal precursor and facilitating large-scale production.

[0075] In one possible implementation, as shown in FIG. 1, Figure 3 As shown, the reaction chamber 10 can further have at least one channel 105, wherein the inlet of the channel 105 is connected with the first chamber 101, and the outlet of the channel 105 is connected with the gas outlet 30. In this way, the flow path in the reaction chamber 10 can be increased, and the contact opportunity of the reaction gas and the metal source vapor can be further increased. The reaction gas that is not completely reacted in the first chamber 101 and the metal source vapor in the first chamber 101 can further react in the channel 105, thereby effectively improving the reaction conversion efficiency of the reaction gas and the metal source, and to a certain extent, improving the growth rate, growth quality, and product yield of the crystal.

[0076] Referring to Figure 4As shown, the reaction chamber 10 can have two channels 105. Among them, the inlet of a first channel 1051 of the two channels 105 is in communication with the first chamber 101, the outlet of the first channel 1051 is in communication with the inlet of a second channel 1052 of the two channels 105, the outlet of the second channel 1052 is in communication with the gas outlet 30, and the inlet of the first channel 1051 and the outlet of the second channel 1052 are located on the same side of the reactor body 1. By having two channels 105 in the reaction chamber 10, the flow path in the reaction chamber 10 can be further increased, and since the inlet of the first channel 1051 and the outlet of the second channel 1052 are located on the same side of the reactor body 1, the occupation space of the first channel 1051 and the second channel 1052 in the reaction chamber 10 can also be saved to some extent.

[0077] In the embodiment of the present application, as shown in Figure 5 The at least one channel 105 can also be provided with a flow blocking structure 106. Among them, the channel 105 has a first side wall, a second side wall, an upper bottom wall and a lower bottom wall, the flow blocking structure 106 is fixedly connected with any one, any two or any three of the first side wall, the second side wall, the upper bottom wall and the lower bottom wall, and a second gap 107 is formed between the flow blocking structure 106 and at least one of the first side wall, the second side wall, the upper bottom wall and the lower bottom wall. By providing the flow blocking structure 106 in the at least one channel 105, the flow of the gas can be blocked to some extent, and the contact time of the reaction gas and the metal source can be increased again to improve the conversion efficiency of the metal precursor and the quality of the crystal epitaxial growth.

[0078] Specifically, after the reaction gas that is not completely reacted in the first chamber 101 and the metal source vapor in the first chamber 101 enter the channel 105, the flow blocking structure 106 blocks the formation of vortex flow, which can prevent the rapid flow of the gas in the channel 105, effectively prevent the escape of the reaction gas that is not completely reacted and the metal source vapor, so that the reaction gas that is not completely reacted in the first chamber 101 and the metal source vapor can be reacted again, and the gas generated after the full reaction can flow out of the reaction chamber 10 through the second gap 107, thereby ensuring the conversion rate and the crystal growth rate.

[0079] It can be understood that in the embodiment of the present application, the flow blocking structure 106 can be provided only in the first channel 1051, or only in the second channel 1052, or in both the first channel 1051 and the second channel 1052. Exemplarily, as shown in Figure 6 The flow blocking structure 106 is provided in both the first channel 1051 and the second channel 1052 to achieve better flow blocking effect.

[0080] In addition, it should be noted that the flow blocking structure 106 can also be arranged at other positions in the reaction chamber 10, in addition to the channel 105 (the first channel 1051 and the second channel 1052), to achieve the flow blocking effect.

[0081] Continuing to refer to Figure 5 or Figure 6 As shown in the figure, the flow blocking structure 106 can include at least one flow blocking body 1061, wherein the flow blocking body 1061 can be fixedly connected to one of the upper bottom wall and the lower bottom wall of the channel 105, and a second gap 107 can be formed between the flow blocking body 1061 and the other one of the upper bottom wall and the lower bottom wall of the channel 105. In this way, after the partially unreacted reaction gas in the first chamber 101 and the metal source vapor in the first chamber 101 enter the channel 105, the partially unreacted reaction gas and the metal source vapor are blocked to form a vortex flow due to the fixed connection of the flow blocking body 1061 to one of the upper bottom wall and the lower bottom wall of the channel 105, which can effectively prevent the escape of the partially unreacted reaction gas and the metal source vapor, so that the partially unreacted reaction gas and the metal source vapor in the first chamber 101 can be more fully reacted, and then the fully reacted gas flows out of the reaction chamber 10 through the second gap 107 formed between the flow blocking body 1061 and the other one of the upper bottom wall and the lower bottom wall of the channel 105, thereby ensuring the conversion rate and the crystal growth rate.

[0082] As an optional implementation, the number of flow blocking bodies 1061 can be multiple, and the multiple flow blocking bodies 1061 are distributed along the extension direction of the channel 105. By increasing the number of flow blocking bodies 1061 in the channel 105, a further blocking effect on the partially unreacted reaction gas and the metal source vapor can be achieved, so that the escape of the partially unreacted reaction gas and the metal source vapor can be more effectively prevented, and the partially unreacted reaction gas and the metal source vapor in the first chamber 101 can be further fully reacted.

[0083] It can be understood that, in the embodiments of the present application, the specific structure of the flow blocking body 1061 includes but is not limited to the following possible implementation manners:

[0084] One possible implementation manner is that the flow blocking body 1061 is a columnar structure. For example, the flow blocking body 1061 can be a cylindrical structure (see Figure 5 or a prismatic structure (see Figure 7 The embodiments of the present application are not limited to the above examples.

[0085] Another possible implementation manner is that the flow blocking body 1061 is a conical structure. For example, the flow blocking body 1061 can be a conical structure.

[0086] In another possible implementation, the resistance fluid 1061 is in a spiral structure. By arranging the resistance fluid 1061 in a spiral structure, the contact area between the outer surface of the resistance fluid 1061 and the gas can be increased, so that the resistance fluid 1061 can better block the gas.

[0087] Of course, in some other possible implementations, the resistance fluid 1061 can also be in a labyrinth structure, and the specific arrangement of the labyrinth structure is not limited in the embodiments of the present application, and is not limited to the above examples. Moreover, the appearance shape of the reactor 100 is not limited in the embodiments of the present application, and can be designed into a required shape according to the connection or spatial arrangement requirement of the reactor 100 and the external growth equipment, for example, the reactor 100 can be a cylinder, a cube or a cuboid, etc. In addition, the volume of the reactor 100, the space of each chamber and the volume ratio thereof can be flexibly set according to the actual process requirement, and the embodiments of the present application are not limited thereto.

[0088] In addition, as an optional implementation, the axial direction of the resistance fluid 1061 can be perpendicular to the extension direction of the channel 105. In this way, the blocking effect of the resistance fluid 1061 on the gas in the channel 105 can be further increased. Of course, in some other embodiments, the axial direction of the resistance fluid 1061 can also be parallel to the extension direction of the channel 105, or the included angle between the axial direction of the resistance fluid 1061 and the extension direction of the channel 105 can be less than 90 degrees, that is, the axial direction of the resistance fluid 1061 can be arranged to be inclined relative to the extension direction of the channel 105.

[0089] In addition, in the embodiments of the present application, the metal source injection operation is simple, which is conducive to reducing the maintenance cost to a certain extent. That is, the metal source can be injected through the reaction gas inlet (i.e., the first gas inlet 201), which has the advantages of high efficiency and convenience compared with the operation of taking out the quartz boat for re-injection or using a pipeline for injection in the prior art.

[0090] Embodiment Two

[0091] On the basis of the above-mentioned embodiment one, the embodiments of the present application provide a reactor 100, which can be a group III metal source reactor. The metal source in the metal source reactor can be a group III metal.

[0092] In this embodiment, the gas introduced through the first inlet 201 of the Group III metal source reactor can be a halide gas or a halogen gas. The halide gas can be any one or more of hydrogen chloride (HCl), hydrogen bromide (HBr), or hydrogen iodide (HI), and the halogen gas can be any one or more of chlorine (Cl2), bromine (Br2), or iodine (I2). The gas introduced through the second inlet 202 of the Group III metal source reactor can be any one or more of hydrogen, argon, and nitrogen; for example, the gas introduced through the second inlet 202 can be a hydrogen-argon mixture.

[0093] It should be noted that when the gas introduced into the first air inlet 201 of the reactor 100 is a halide gas or a halogen gas, the material of the reactor 100 can be quartz or corundum. This application does not limit the material of the reactor 100, as long as it can withstand high temperatures and resist corrosion from halide or halogen gases, thus preventing the reactor 100 from being damaged by high temperatures or corroded by halide or halogen gases.

[0094] In one possible implementation, the quartz can be high-purity quartz.

[0095] Furthermore, this Group III metal source reactor can specifically be a gallium source reactor, wherein the reaction chamber 10 of the reactor body 1 contains liquid gallium. During operation, the gallium source reactor references... Figure 8 As shown, halide gas (HCl, HBr, or HI) or halogen gas (Cl2, Br2, or I2) enters the first chamber 101 through the first inlet 201 and reacts with the liquid gallium in the first chamber 101 to generate gallium halide gas (e.g., gallium chloride, gallium bromide, or gallium iodide). Hydrogen, argon, or nitrogen gas enters the first chamber 102 through the second inlet 202. After sufficient accumulation in the second chamber 102, the hydrogen, argon, or nitrogen gas is injected into the first chamber 101 through the control flow hole 103, forming a dense gas curtain layer above the first chamber 101 (i.e., above the metal source liquid surface in the first chamber 101). This facilitates sufficient contact between the halide gas or halogen gas and the liquid gallium in the first chamber 101, thereby effectively improving the reaction conversion efficiency between the halide gas or halogen gas and the liquid gallium.

[0096] In addition, the halide gas or halogen gas flows from the side close to the first gas inlet 201 to the side far from the first gas inlet 201 in the first chamber 101, and in this process, part of the halide gas or halogen gas that is not completely reacted and the metal gallium vapor in the first chamber 101 are blocked by the second baffle 40 after encountering the second baffle 40 to form a vortex, so that the part of the halide gas or halogen gas that is not completely reacted in the first chamber 101 can be more fully contacted and reacted with the metal gallium vapor, and the gas generated after the reaction flows out through the first gap 50.

[0097] The halide gas or halogen gas generated after the reaction and the metal gallium vapor in the first chamber 101 sequentially enter the first channel 1051 and the second channel 1052 from the first chamber 101, and are blocked by the flow blocking body 1061 to form a vortex, which can effectively prevent the escape of the halide gas or halogen gas that is not completely reacted and the metal gallium vapor, so that the part of the halide gas or halogen gas that is not completely reacted in the first chamber 101 can be more fully reacted with the metal gallium vapor, and then the gas generated after the full reaction flows out of the channel 105 through the second gap 107, and then flows out of the gallium source reactor through the gas outlet 30, thereby ensuring the reaction conversion rate of the halide gas or halogen gas and the liquid gallium.

[0098] In addition, it should be noted that in some other embodiments, the reactor 100 includes but is not limited to a group III metal source reactor, that is, the reactor 100 can also be a group I metal source reactor or a group II metal source reactor. The embodiments of the present application do not limit this and are not limited to the above examples.

[0099] Embodiment three

[0100] The embodiments of the present application provide a growth device, which at least includes a growth device and the reactor 100 in the above-mentioned embodiment one or embodiment two. The outlet of the reactor 100 is in communication with the inlet of the growth device.

[0101] It should be noted that in the embodiments of the present application, the outlet of the reactor 100 can be in communication with the gas outlet 30 of the reactor 100, or the gas outlet 30 of the reactor 100 can be used as the outlet of the reactor 100.

[0102] In the case of taking the gas outlet 30 of the reactor 100 as the outlet of the reactor 100, and taking the reactor 100 as a gallium source reactor, the growth device has a substrate, and the growth device can have ammonia (NH3), and the gallium halide gas (for example, gallium chloride, gallium bromide or gallium iodide) flowing out of the gas outlet 30 of the reactor 100 enters the growth device from the inlet of the growth device, reacts with the NH3 in the growth device, and forms a nitride semiconductor material (for example, GaN single crystal material) on the surface of the substrate.

[0103] The growth device provided by the embodiments of the present application at least comprises a growth device and a reactor 100, the outlet of the reactor 100 is communicated with the inlet of the growth device, different gas inlets 20 are arranged on the reactor body 1, the first gas inlet 201 is communicated with the first chamber 101, the second gas inlet 202 is communicated with the second chamber 102, and the first chamber 101 and the second chamber 102 are communicated through a plurality of flow control through holes 103, so that the gas entering the second chamber 102 through the second gas inlet 202 can be sprayed into the first chamber 101 through the plurality of flow control through holes 103 to form a dense gas curtain layer, which can promote the reaction gas entering the first chamber 101 through the second gas inlet 202 to fully contact with the metal source in the first chamber 101, thereby effectively improving the reaction conversion efficiency of the reaction gas and the metal source. The gas generated in the reactor 100 enters the inlet of the growth device from the gas outlet 30 and further reacts with the substance in the growth device to generate crystals. Since the reaction conversion efficiency of the reactor 100 is improved, the problem that the reaction gas does not completely react in the reactor and then enters the growth device can be avoided, thereby the growth rate of the crystals in the growth device, the quality stability and consistency of the crystals, and the large-scale production of epitaxial single crystal materials can be improved to a certain extent.

[0104] It can be understood that increasing the growth rate of the crystals in the growth device can reduce the process cost of growing the crystals. By increasing the conversion rate of the reaction gas (halide gas or halogen gas) to gallium halide gas (such as gallium chloride, gallium bromide or gallium iodide), the crystal growth rate can be increased, and the growth time can be reduced, thereby reducing the preparation cost of the substrate.

[0105] Avoiding the reaction gas not completely reacting in the reactor and then entering the growth device can improve the quality stability and consistency of the crystals in the growth device. By avoiding the reaction gas and metal source vapor mixing with the gallium halide gas into the growth device, the parasitic reaction and polycrystal growth in the growth device can be inhibited, the problem that the unreacted reaction gas will corrode the crystal material after entering the growth device and interfere with the crystal growth, and the problem of serious negative impact on the crystal quality of the material can be avoided, thereby the quality stability and consistency of the crystals in the growth device can be improved.

[0106] In the description of the embodiments of the present application, it should be noted that unless otherwise explicitly specified and limited, the terms "mounting", "connection", "connection" should be understood in a broad sense, for example, it can be fixed connection, or indirect connection through an intermediate medium, or internal communication of two elements or interaction relationship between two elements. For those skilled in the art, the specific meaning of the above terms in the embodiments of the present application can be understood according to the specific circumstances.

[0107] In the description of the application embodiments, the meaning of "a plurality of" is two or more, unless otherwise specifically specified.

[0108] The terms "first", "second", "third", "fourth" and the like in the description of the application embodiments and in the claims, if any, are used for distinguishing between similar objects talking about the application embodiments and do not necessarily have to appear in the application embodiments in this order. It is to be understood that the data used in this way can be interchanged, where appropriate, so that, for example, embodiments of the application described herein can be carried out in a different order than described here. Furthermore, the terms "comprising" and "including" and any of their derivatives, are intended to cover the non-exclusive inclusion of, for example, a process, method, system, product or apparatus that comprises a list of steps or units not necessarily limited to those explicitly listed, but can include other steps or units not expressly listed or inherent to such process, method, product or apparatus.

[0109] Finally, it should be noted that: the above embodiments are only used to illustrate the technical solutions of the application embodiments, but not limit them; although the application embodiments have been described in detail with reference to the foregoing embodiments, those skilled in the art should understand: it can still modify the technical solutions recorded in the foregoing embodiments, or make equivalent replacement for part or all of the technical features; and these modifications or replacements do not make the essence of the corresponding technical solutions deviate from the scope of the technical solutions of the application embodiments.

Claims

1. A horizontal HVPE reactor, characterized in that, At least including: Reactor body; The reactor body has a reaction chamber inside, and an air inlet and an air outlet are respectively provided on two opposite side walls of the reactor body, and the air inlet and the air outlet are connected to the reaction chamber. The reaction chamber is divided into a first chamber and a second chamber. The air inlet includes a first air inlet and a second air inlet. The first air inlet and the air outlet are respectively connected to the first chamber, and the second air inlet is connected to the second chamber. Furthermore, a plurality of flow control holes are provided between the first chamber and the second chamber to connect the first chamber and the second chamber; each of the flow control holes extends to one side toward the first chamber and forms an extension portion; The control orifice is configured to inject gas from the second chamber into the first chamber, so that the reactant gas in the first chamber comes into full contact with the metal source.

2. The reactor according to claim 1, characterized in that, The second chamber is located above the first chamber.

3. The reactor according to claim 1, characterized in that, A first baffle is provided between the first chamber and the second chamber, and the first baffle has a plurality of control flow holes to connect the first chamber and the second chamber.

4. The reactor according to claim 3, characterized in that, The multiple flow control holes are evenly spaced on the first baffle; Alternatively, multiple flow control holes are spaced apart on the first baffle, and the density of the flow control holes gradually increases from the end of the first baffle near the air inlet to the end of the first baffle near the air outlet. Alternatively, multiple flow control holes are spaced apart on the first baffle, and the density of the flow control holes gradually decreases from the end of the first baffle near the air inlet to the end of the first baffle near the air outlet.

5. The reactor according to claim 3, characterized in that, The diameter of the control flow hole is 50nm-500um.

6. The reactor according to claim 5, characterized in that, The diameter of the control flow hole is 20um-80um.

7. The reactor according to claim 3, characterized in that, The distance between two adjacent control holes in the plurality of control holes is 1-3 mm.

8. The reactor according to claim 7, characterized in that, The extension length of the extension is 1-3 mm.

9. The reactor according to claim 1, characterized in that, A second baffle is provided between the reaction chamber and the gas outlet; One end of the second baffle is connected to the lower bottom wall of the reactor body, and the other end of the second baffle forms a first gap with the upper bottom wall of the reactor body.

10. The reactor according to any one of claims 1-9, characterized in that, The reaction chamber also has at least one channel, the inlet of which is connected to the first chamber, and the outlet of which is connected to the gas outlet.

11. The reactor according to claim 10, characterized in that, The reaction chamber has two channels; The inlet of the first channel of the two channels is connected to the first chamber, the outlet of the first channel is connected to the inlet of the second channel of the two channels, and the outlet of the second channel is connected to the air outlet. Furthermore, the inlet of the first channel and the outlet of the second channel are located on the same side of the reactor body.

12. The reactor according to claim 10, characterized in that, At least one of the channels is provided with a flow-blocking structure; the channel has a first sidewall, a second sidewall, an upper bottom wall, and a lower bottom wall; The flow-blocking structure is fixedly connected to any one, any two, or any three of the first sidewall, the second sidewall, the upper bottom wall, and the lower bottom wall, and a second gap is formed between the flow-blocking structure and at least one of the first sidewall, the second sidewall, the upper bottom wall, and the lower bottom wall.

13. The reactor according to claim 12, characterized in that, The flow-blocking structure includes: at least one flow-blocking material; The fluid barrier is fixedly connected to one of the upper and lower bottom walls of the channel, and a second gap is formed between the fluid barrier and the other of the upper and lower bottom walls of the channel.

14. The reactor according to claim 13, characterized in that, The number of the flow-blocking fluids is multiple; the multiple flow-blocking fluids are distributed at intervals along the extension direction of the channel.

15. The reactor according to claim 13, characterized in that, The fluid barrier has a columnar structure.

16. The reactor according to claim 13, characterized in that, The fluid barrier has a spiral structure.

17. The reactor according to claim 13, characterized in that, The axial direction of the fluid barrier is perpendicular to the extension direction of the channel.

18. The reactor according to claim 1, characterized in that, The reactor is a group III metal source reactor.

19. The reactor according to claim 18, characterized in that, The reactor is a gallium source reactor.

20. The reactor according to claim 19, characterized in that, The reaction chamber of the reactor body contains liquid gallium.

21. The reactor according to claim 18, characterized in that, The gas introduced into the first air inlet of the reactor is a halide gas or a halogen gas.

22. The reactor according to claim 21, characterized in that, When the gas introduced into the first air inlet of the reactor is a halide gas or a halogen gas, the reactor is made of quartz or corundum.

23. The reactor according to claim 18, characterized in that, The gas introduced into the second inlet of the reactor is any one or more of hydrogen, argon, and nitrogen.

24. A growth apparatus, characterized in that, It includes at least: a growth device and a reactor as described in any one of claims 1-23; wherein the outlet of the reactor is connected to the inlet of the growth device.

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