Photovoltaic glass coating equipment

Abstract

This invention discloses a photovoltaic glass coating equipment, belonging to the field of photovoltaic glass coating technology. The technical solution includes, in sequence, a feeding zone, a first transition zone, a base film formation zone, a CIGS layer coating zone, an alkali metal fluoride evaporation zone, a CdS layer coating zone, a ZnO layer coating zone, an AZO layer coating zone, a second transition zone, and a unloading zone. This photovoltaic glass coating equipment uses magnetron sputtering to prepare copper indium gallium selenide (CIGS) thin films, resulting in higher continuity and stability in the preparation process.

Description

Technical Field

[0001] This invention relates to the field of photovoltaic glass coating technology, and more specifically to a photovoltaic glass coating equipment. Background Technology

[0002] CIGS thin-film solar cells can be categorized by the method of CIGS film preparation, primarily through two processes. One is the ternary co-evaporation method, which uses three sets of evaporation equipment in a vacuum chamber to simultaneously evaporate Cu, In, and Ga onto the surface of the material to be coated in a specific ratio. However, due to the high cost of manufacturing equipment, the difficulty in process control, and the poor repeatability of the process, industrialization is quite challenging.

[0003] Another process is magnetron sputtering, which involves pre-preparing a ternary alloy powder of Cu, In, and Ga, then using the alloy powder to form a copper indium gallium (CIGa) target. Selenium is then deposited onto the film along with CIGa using an evaporation device. Since the composition of this ternary alloy target is consistent, the proportions of the three elements in the film remain essentially constant as the film thickness increases. This means the proportions of Cu, In, and Ga in the film cannot be adjusted during the deposition process. For example, Chinese invention patent CN103219419A discloses a method for producing CIGa thin films using a CIGa alloy sputtering target, comprising the following steps: sputtering a first copper-poor layer on a substrate using a CIGa alloy as the target; sputtering a copper-rich layer on the first copper-poor layer using a CIGa alloy as the target; and sputtering a second copper-poor layer on the copper-rich layer using a CIGa alloy as the target. This patent does not allow for adjustment of the proportions of the four elements during the deposition process. Summary of the Invention

[0004] The technical problem to be solved by the present invention is to overcome the shortcomings of the prior art and provide a photovoltaic glass coating equipment that uses magnetron sputtering to prepare copper indium gallium selenide thin films, resulting in a more continuous and stable preparation process.

[0005] The technical solution of this invention is as follows:

[0006] The photovoltaic glass coating equipment includes, in sequence, a feeding area, a transition area one, a base film forming area, a CIGS layer coating area, an alkali metal fluoride evaporation area, a CdS layer coating area, a ZnO layer coating area, an AZO layer coating area, a second transition area, and a unloading area. Each area is separated by valves, and each area includes at least one vacuum chamber connected to a vacuum system. A glass conveying mechanism is installed within the vacuum chamber, on which the glass is conveyed forward. A back plate is inclined on one side of the glass conveying mechanism, and the glass rests inclined against the back plate. Several rollers are installed on the side of the back plate facing the glass. The base film forming area, CdS layer coating area, ZnO layer coating area, and AZO layer coating area are all connected to a vacuum system. Each cavity contains a cathode, with a target tube mounted on the cathode. The end of the target tube is connected to an RF power supply, and a target material is mounted on the target tube. Vacuum chambers one, two, and three are sequentially arranged within the CIGS layer coating area. Cathodes are located in each of these three chambers, with target tubes mounted on them. The end of the target tube is connected to a programmable DC power supply, and a target material is mounted on the target tube. The target material in vacuum chamber one is composed of Cu, In, Ga, and Se; the target material in vacuum chamber two is composed of Cu and Se; and the target material in vacuum chamber three is composed of In, Ga, and Se. An alkali metal evaporation mechanism is installed within the vacuum chamber of the alkali metal fluoride evaporation zone to deposit alkali metals onto the glass surface.

[0007] Preferably, the bottom of the glass is clamped in a fixing clamp, which is placed on the glass conveying mechanism and has a rubber pad inside.

[0008] Preferably, a heating zone is provided between the transition zone and the base film forming zone. The heating zone includes a vacuum chamber, in which a heating mechanism and a glass conveying mechanism are provided. A back plate is inclinedly provided on one side of the glass conveying mechanism, and the glass is inclinedly resting against the back plate. Several rollers are provided on the side of the back plate facing the glass.

[0009] Preferably, the heating mechanism includes a heating wire disposed within a vacuum chamber.

[0010] Preferably, the vacuum chamber of the heating zone is provided with glass wool outside.

[0011] Preferably, a plasma cleaning zone is provided between the heating zone and the film-forming zone. The plasma cleaning zone includes a vacuum chamber, in which a plasma generator and a glass conveying mechanism are provided. A back plate is inclinedly provided on one side of the glass conveying mechanism, and the glass rests inclinedly against the back plate. Several rollers are provided on the side of the back plate facing the glass. The ionization source of the plasma generator is provided with serrated protrusions.

[0012] Preferably, in the target material of vacuum chamber one, the area ratio of Cu, In, Ga and Se materials is 1:1:1:2; in the target material of vacuum chamber two, the area ratio of Cu to Se materials is 1:2; and in the target material of vacuum chamber three, the area ratio of In, Ga and Se materials is 1:1:2.

[0013] Preferably, the alkali metal evaporation mechanism includes a rotating roller installed in a vacuum chamber, the rotating roller being driven to rotate by a motor; a plurality of mounting rods are spaced apart on the surface of the rotating roller, the length direction of the mounting rods extending along the axial direction of the rotating roller, and the mounting rods are respectively connected to a controller via wires; a plurality of crucibles are spaced apart on the mounting rods, the crucibles are equipped with heating wires, the crucibles are filled with alkali metal fluorides, and the openings of the crucibles face outwards.

[0014] Preferably, the valve includes a door frame, a lifting door plate is inserted inside the door frame, the lifting door plate is connected to the piston rod of a cylinder, and the cylinder drives the lifting door plate to rise and fall, thereby realizing the connection or closure of adjacent areas.

[0015] Preferably, a heating wire is provided in the vacuum chamber of the AZO layer coating area.

[0016] Compared with the prior art, the present invention has the following advantages:

[0017] This invention utilizes magnetron sputtering to prepare copper indium gallium selenide (CIGS) thin films, resulting in a more continuous and stable preparation process. Compared to the ternary co-evaporation method, it eliminates the need to replace the film material with each batch, avoiding frequent opening and closing of the vacuum chamber at the film deposition location. This saves vacuuming time while ensuring the vacuum chamber remains under a high vacuum, providing a stable environment for film deposition. Compared to existing magnetron sputtering methods, the CIGS content can be adjusted during film deposition, offering greater production flexibility. Furthermore, because the film deposition environment is consistently under high vacuum, the probability of collisions between film-forming molecules and the gas is low, resulting in higher kinetic energy of the molecules and enhanced adsorption to the substrate, leading to a more robust deposited film. This reduces the likelihood of film delamination during the use of CIGS thin-film photovoltaic glass, which can cause a decline in photoelectric conversion performance. Attached Figure Description

[0018] To more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, for those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0019] Figure 1 This is a schematic diagram of the structure of the present invention.

[0020] Figure 2This is a schematic diagram of the glass being transported within a vacuum chamber in this invention.

[0021] Figure 3 This is a schematic diagram of the fixing clip of the present invention.

[0022] Figure 4 This is a schematic diagram of the structure of the substrate film formation area, CIGS layer coating area, CdS layer coating area, or ZnO layer coating area of ​​the present invention.

[0023] Figure 5 This is a schematic diagram of the heating zone of the present invention.

[0024] Figure 6 This is a schematic diagram of the plasma cleaning zone of the present invention.

[0025] Figure 7 This is a schematic diagram of the plasma generator of the present invention.

[0026] Figure 8 This is a schematic diagram of the structure of the protrusion on the surface of the plasma generator ionization source of the present invention.

[0027] Figure 9 This is a schematic diagram of the structure of the alkali metal fluoride evaporation zone of the present invention.

[0028] Figure 10 A top view of the rotating roller of the present invention.

[0029] Figure 11 This is a top view of the crucible of the present invention.

[0030] Figure 12 This is a schematic diagram of the AZO layer coating area of ​​the present invention.

[0031] Figure 13 This is a schematic diagram of the coated photovoltaic glass prepared in Example 1 of the present invention.

[0032] In the diagram, 1. Feeding area; 2. Transition zone one; 3. Heating zone; 4. Plasma cleaning zone; 401. Plasma generator; 402. Protrusion; 5. Base film formation zone; 6. CIGS layer coating zone; 601. Vacuum chamber one; 602. Vacuum chamber two; 603. Vacuum chamber three; 7. Alkali metal fluoride evaporation zone; 701. Rotating roller; 702. Mounting rod; 703. Crucible; 704. Baffle; 8. CdS layer coating zone; 9. ZnO layer coating zone; 10. AZO 11. Coating Zone; 12. Transition Zone II; 13. Feeding Zone; 14. Valve; 15. Vacuum Chamber; 16. Vacuum System; 17. Glass Conveying Mechanism; 18. Glass; 19. Back Plate; 20. Roller; 21. Target Tube; 22. Fixing Clamp; 23. Rubber Pad; 24. Heating Wire; 2501. Mo Layer; 2502. CIGS Layer; 2503. Alkali Metal Fluoride Layer; 2504. CdS Layer; 2505. ZnO Layer; 2506. AZO Layer. Detailed Implementation

[0033] To enable those skilled in the art to better understand the technical solutions of this invention, the technical solutions of the embodiments of this invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this invention, and not all embodiments. Based on the embodiments of this invention, all other embodiments obtained by those skilled in the art without creative effort should fall within the scope of protection of this invention.

[0034] Example 1

[0035] like Figure 1 As shown, this embodiment provides a photovoltaic glass coating equipment, including a feeding zone 1, a transition zone 2, a base film forming zone 5, a CIGS layer coating zone 6, an alkali metal fluoride evaporation zone 7, a CdS layer coating zone 8, a ZnO layer coating zone 9, an AZO layer coating zone 10, a second transition zone 11, and a discharging zone 12 arranged sequentially. Each zone is separated by a gate valve 13, making each zone an independent working space. The gate valve 13 includes a rectangular door frame with a lifting door plate inserted inside. The top of the door frame has a through hole for the lifting door plate to pass through, and the bottom of the door frame has a slot for the lifting door plate to be inserted. Sealing rings are installed in the through hole and slot to ensure the overall sealing of the gate valve 13. A cylinder is mounted on the top of the door frame via a mounting bracket. The piston rod of the cylinder faces downward and is connected to the lifting door plate. The cylinder drives the lifting door plate to rise or fall, thereby connecting or closing adjacent zones.

[0036] Specifically, such as Figure 1-2As shown, each zone includes at least one vacuum chamber 14. Each vacuum chamber 14 is equipped with a feeding door, which can be opened to add material. The vacuum chamber 14 is connected to a vacuum system 15 (such as a vacuum pump), and is equipped with a venting valve to maintain a certain vacuum level. Figure 2-3 As shown, a glass conveying mechanism 16 (such as a conveyor belt) is provided inside the vacuum chamber 14, and the glass 17 is conveyed forward on the glass conveying mechanism 16. A stainless steel back plate 18 is inclined on one side of the glass conveying mechanism 16, and the inclination angle can be 10°. The back plate 18 is fixed to the side wall of the vacuum chamber 14 by several support rods 24. When the glass 17 is conveyed on the glass conveying mechanism 16, it leans against the back plate 18 at an inclination. Several ceramic rollers 19 are provided on the side of the back plate 18 facing the glass 17, which reduces the forward resistance of the glass 17 and also reduces the scratching of the glass 17.

[0037] The function of transition zone 12 and transition zone 21 is to connect the loading zone 1 and unloading zone 12, which are in an atmospheric environment, with the processing zone, which is in a vacuum environment, without disrupting the vacuum environment of the processing zone.

[0038] like Figure 4 , 12 As shown, cathodes are installed in the vacuum chambers 14 of the substrate film deposition area 5, the CdS layer deposition area 8, the ZnO layer deposition area 9, and the AZO layer deposition area 10. Target tubes 20 are mounted on the cathodes and are driven to rotate by a servo motor. The ends of the target tubes 20 are connected to an RF power supply, an IF power supply, or a programmable DC power supply. Target materials are mounted on the target tubes 20. Different target materials are used in different areas; for example, Mo target material is used in the substrate film deposition area 5, CdS target material in the CdS layer deposition area 8, ZnO target material in the ZnO layer deposition area 9, and AZO target material in the AZO layer deposition area 10, to sequentially magnetron sputter different film layers onto the surface of the glass 17. The substrate film deposition area 5 and the CdS layer deposition area 8 each have one vacuum chamber 14, the ZnO layer deposition area 9 has two vacuum chambers 14, and the AZO layer deposition area 10 has five vacuum chambers 14.

[0039] like Figure 1 , 4As shown, two vacuum chambers 601, two vacuum chambers 602, and one vacuum chamber 603 are sequentially arranged within the CIGS layer coating area 6. Cathodes are disposed within vacuum chambers 601, 602, and 603, and target tubes 20 are mounted on the cathodes. A programmable DC power supply is connected to the end of the target tubes 20. Target materials are mounted on the target tubes 20. The target material in vacuum chamber 601 is composed of Cu, In, Ga, and Se with an area ratio of 1:1:1:2; the target material in vacuum chamber 602 is composed of Cu and Se with an area ratio of 1:2; and the target material in vacuum chamber 603 is composed of In, Ga, and Se with an area ratio of 1:1:2. That is, the targets in vacuum chambers 601, 602, and 603 are multi-material co-sputtering targets. Each target is divided into different material regions according to its area, and the boundary lines of each target extend along the axial direction of the target tube 20.

[0040] The PLC controller adjusts the servo motor speed in real time to accurately position the target tube 20 toward the surface area of ​​the glass 17. Simultaneously, the PLC controller controls the output power of the programmable DC power supply, allowing for real-time adjustment of the sputtering power as the target tube 20 rotates toward the glass 17 area. In other words, when different targets on the same target tube 20 rotate to a position facing the glass 17, the output power of the programmable DC power supply is changed in real time. The magnitude of the output power affects the material sputtering rate, thus enabling adjustable composition ratios in the production of multi-component films.

[0041] If the glass enters the CIGS coating area 6 at a conveying speed of 100-200 cm / min, it first passes through two vacuum chambers 601. The target material is Cu:In:Ga:Se (area ratio) = 1:1:1:2. The programmable DC power supply is set to power as shown in Table 1.

[0042] Table 1

[0043] Target material Cu In Ga Se Power (kW) 2-10 3-11 2-8 4-12

[0044] Subsequently, the sample passes through two vacuum chambers, 602, with a target material of Cu:Se (area ratio) = 1:2. The programmable DC power supply is set to power as shown in Table 2.

[0045] Table 2

[0046] Target material Cu Se Power (kW) 3-11 5-15

[0047] Finally, it passes through vacuum chamber 3603, whose target material is In:Ga:Se (area ratio) = 1:1:2. The programmable DC power supply setting power is shown in Table 3.

[0048] Table 3

[0049] Target material In Ga Se Power (kW) 3-11 2-8 4-12

[0050] Furthermore, an alkali metal evaporation mechanism is installed inside the vacuum chamber 14 of the alkali metal fluoride evaporation zone 7 to deposit alkali metal onto the surface of the glass 17. Specifically, as... Figure 9-10 As shown, the alkali metal evaporation mechanism includes a rotating roller 701 installed in a vacuum chamber 14, driven by a motor. Several mounting rods 702 are spaced apart on the surface of the rotating roller 701, extending along the axial direction of the roller 701 and connected to a controller via wires. Four crucibles 703 are spaced apart on the mounting rods 702, each equipped with a heating wire 23. The crucibles 703 contain alkali metal fluorides (such as KF, NaF, LiF), with their openings facing outwards. Before evaporation, a pre-melting machine (Chengdu Guotai Vacuum Equipment Co., Ltd., RL-820) is used to pre-melt the alkali metal fluorides, melting the powder into a single solid block. To prevent the alkali metal fluorides in the crucibles 703 from spilling out during evaporation, a pre-melting device is used... Figure 11 As shown, an annular baffle 704 can be provided at the opening of crucible 703 to prevent solid alkali metal fluorides from pouring out of crucible 703. Then, crucible 703 is fixed to mounting rod 702 by providing screws at the bottom of crucible 703 and threaded holes on mounting rod 702. Then, mounting rod 702 is fixed to rotating roller 701 by bolts and nuts. Finally, rotating roller 701 is installed into vacuum chamber 14.

[0051] As the rotating roller 701 rotates to the mounting rod 702 facing the surface of the glass 17, a current (which can be set to 2A) is supplied to the mounting rod 702 via the controller. The alkali metal fluoride in the crucible 703 on the mounting rod 702 is heated and evaporated, thereby depositing the alkali metal fluoride onto the CIGS layer 2502 on the surface of the glass 17. At any given time, only the crucible 703 on one mounting rod 702 facing the surface of the glass 17 is in the evaporation state. As the alkali metal fluoride in the crucible 703 evaporates, when the alkali metal fluoride in the crucible 703 is completely evaporated, a sudden increase in the voltage curve displayed on the controller can be observed. At this time, the rotating roller 701 can be controlled to rotate, so that the next mounting rod 702 rotates to the position facing the glass 17 to continue the evaporation of the alkali metal fluoride.

[0052] Working principle:

[0053] Step 1: The glass 17 is manually transferred onto the conveyor belt, and the glass 17 is conveyed by a motor that provides forward driving force. During the conveying process, the glass 17 rests against the inclined back plate 18.

[0054] Step 2: The vacuum chamber 14 of transition zone 1 is equipped with a vacuum system 15 and a venting valve, which can switch between vacuum and atmospheric conditions. Each time it switches, a piece of glass 17 will move from the transition zone to the next zone, and another piece of glass 17 will move from the loading zone 1 to the transition zone, so that the glass 17 can transition from the atmospheric environment to the vacuum environment.

[0055] Step 3: Glass 17 enters the substrate film formation area 5. Argon gas at 400 sccm is introduced into the vacuum chamber 14 along the length of the target material. The RF power supply voltage is 800-1000V, and the current is 30A. The background vacuum level of the vacuum chamber 14 is <5×10⁻⁶. -5 mbar. The adhesion of Mo atoms to the surface of the glass 17 substrate is further increased by the forward voltage of the radio frequency power supply, forming a conductive Mo layer 2501 on the glass surface.

[0056] Step 4: Glass 17 enters CIGS layer coating area 6, and successively undergoes two copper indium gallium selenide (CIGS) coatings in two vacuum chambers 1 (601), two copper selenide (CIGS) coatings in two vacuum chambers 2 (602), and one CIGS coating in one vacuum chamber 3 (603). The background vacuum level of vacuum chambers 1 (601), 2 (602), and 3 (603) is <5×10⁻⁶. -5 mbar. The sputtering rate of different target materials on the same target tube 20 can be adjusted by the output power of the programmable DC power supply, ultimately forming the CIGS layer 2502. The CIGS layer 2502 has a very high absorption coefficient for sunlight, reaching 10. 4 -10 5 / cm, which can fully absorb solar photons and collect minority carriers.

[0057] Step 5: Glass 17 enters the alkali metal fluoride evaporation zone 7. Current is supplied to the mounting rod 702 facing the glass 17 via a controller, causing the alkali metal fluoride in the upper crucible 703 to evaporate. This results in the deposition of an alkali metal fluoride layer 2503 onto the CIGS layer 2502 on the surface of the glass 17. The alkali metal element reduces the density of charged defects and increases the formation of secondary phases at grain boundaries, leading to better passivation and improved power generation efficiency. In this embodiment, the alkali metal fluoride evaporation zone 7 can maintain the evaporation and deposition of alkali metal fluorides for a long time, avoiding frequent furnace start-ups and enabling continuous production, thus significantly improving production efficiency.

[0058] Step Six: Glass 17 enters the CdS layer coating area 8. Argon gas at 400 sccm is introduced into the vacuum chamber 14 along the length of the target material. The intermediate frequency power supply frequency is 30-40 kHz, the voltage is 500-550 V, and the current is 10-15 A. The background vacuum level of the vacuum chamber 14 is <5 × 10⁻⁶. -5mbar. In the CdS layer coating area 8, a CdS thin film (i.e., CdS layer 2504) is magnetron sputtered onto the alkali metal fluoride layer 2503 on glass 17. CdS is an N-type semiconductor material, forming a PN junction with the P-type CIGS layer 2502, thereby generating the photovoltaic effect. This CdS thin film is a direct bandgap material, which can match the bandgap between the CIGS layer 2502 and the subsequently processed ZnO layer 2505, thereby improving the bandgap continuity between the ZnO layer 2505 and the CIGS layer 2502.

[0059] Step 7: Glass 17 enters the ZnO layer coating area 9, and the background vacuum level of vacuum chamber 14 is <5×10⁻⁶. -5 The intermediate frequency power supply has a frequency of 30-40kHz, a voltage of 550-650V, and a current of 15-20A. In the ZnO layer coating area 9 of glass 17, a ZnO thin film (i.e., ZnO layer 2505) is magnetron sputtered onto the CdS layer 2504. This ZnO thin film has high transmittance and together with the CdS layer 2504 forms an n-type region material, which, together with the p-type CIGS material, forms a heterojunction and creates a built-in electric field, thereby enabling the output of current.

[0060] Step 8: Glass 17 enters the AZO layer coating area 10, and the background vacuum level of vacuum chamber 14 is <5×10⁻⁶. -5 The medium-frequency power supply has a frequency of 30-40kHz, a voltage of 480-560V, and a current of 18-32A. In the AZO layer coating area 10, a thin AZO film (i.e., AZO layer 2506) is magnetron sputtered onto the ZnO layer 2505 in glass 17. This AZO film has a low resistivity, which ensures that most of the solar spectrum can be transmitted and plays a role in collecting current.

[0061] Step 9: After completing the AZO 2506 plating, the desired result is obtained as shown below. Figure 13 The coated photovoltaic glass shown enters the unloading area 12 through the transition zone 2 11, and the glass 17 can be removed manually.

[0062] Example 2

[0063] Based on Embodiment 1, in order to increase the stability of glass 17 conveying, the bottom of glass 17 can be clamped in the fixing clamp 21. The fixing clamp 21 is placed on the glass conveying mechanism 16 and a rubber pad 22 is provided inside the fixing clamp 21. The bottom of glass 17 is wrapped in the rubber pad 22.

[0064] Example 3

[0065] Based on Example 1, such as Figure 5As shown, a heating zone 3 is also provided between the transition zone 2 and the base film forming zone 5. The heating zone 3 includes a vacuum chamber 14. A heating mechanism (such as a heating wire 23) and a glass conveying mechanism 16 are provided in the vacuum chamber 14. A back plate 18 is inclined on one side of the glass conveying mechanism 16. The glass 17 leans against the back plate 18 at an incline, and a number of ceramic rollers 19 are provided on the side of the back plate 18 facing the glass 17.

[0066] Before processing, glass 17 undergoes a heat treatment to raise its surface temperature, activate the surface, and simultaneously evaporate any oil or contaminants. The heating wire 23 can be made of silicon carbide to avoid introducing other impurities into the film layer, ensuring its cleanliness. A temperature sensor is installed 5mm from the surface of glass 17 inside the vacuum chamber 14 to monitor the heating temperature of glass 17 in real time. When glass 17 passes through the area where the heating wire 23 is located within the vacuum chamber 14, the temperature sensor detects the surface temperature and, through a controller, adjusts the current flowing through the heating wire 23 to maintain the surface temperature of glass 17 between 200-400℃. Furthermore, to reduce heat loss in the heating zone 3 and ensure heating efficiency, glass wool can be installed outside the vacuum chamber 14 of the heating zone 3 for insulation.

[0067] Example 4

[0068] Based on Example 1, such as Figure 6-8 As shown, a plasma cleaning zone 4 is provided between the heating zone 3 and the film-forming zone 5. The plasma cleaning zone 4 includes a vacuum chamber 14, in which a plasma generator 401 and a glass conveying mechanism 16 are arranged. A back plate 18 is inclinedly arranged on one side of the glass conveying mechanism 16. The glass 17 rests inclinedly against the back plate 18, and several ceramic rollers 19 are arranged on the side of the back plate 18 facing the glass 17. Two plasma generators 401 are arranged along the glass 17 conveying direction. The ionization source of the plasma generator 401 is provided with sawtooth protrusions 402, which are adjacent to each other. The height of the protrusions 402 is 3mm, and the distance between the tops of two adjacent protrusions 402 is 5mm. In this embodiment, the surface of the plasma generator 401 is a non-flat surface, which faces the surface of the glass 17.

[0069] Glass 17 enters vacuum chamber 14, and argon gas is introduced into vacuum chamber 14 along the length of plasma generator 401. A voltage of 1000V is applied to the surface of plasma generator 401. Due to the uneven surface of the ionization source of plasma generator 401, sharp points are formed. The presence of these sharp points causes localized charge concentration, thereby bombarding the surface of glass 17 with ionized argon ions at high speed, resulting in a microscopically uneven surface on glass 17. This microscopically uneven surface increases the contact area between the film layer and the substrate glass 17, forming a transition layer between the film layer and glass 17. This allows the film layer to be directly embedded on the surface of glass 17, which is more conducive to film adhesion and thus improves the thermal stability of the film layer.

[0070] Example 5

[0071] Based on Example 1, such as Figure 12 As shown, a heating wire 23 is installed in the vacuum chamber 14 of the AZO layer coating area 10. The length of the heating wire 23 is not less than the height of the glass. Current is supplied to the heating wire 23 by a controller to heat the glass 17 simultaneously with the coating process. The heating temperature is 150-400℃, which reduces the resistivity of the AZO layer, increases the efficiency of carrier extraction, and thus improves the photoelectric conversion efficiency.

[0072] Although the present invention has been described in detail with reference to the accompanying drawings and preferred embodiments, the invention is not limited thereto. Various equivalent modifications or substitutions can be made to the embodiments of the invention by those skilled in the art without departing from the spirit and essence of the invention, and such modifications or substitutions should all be within the scope of the invention. Any variations or substitutions that can be easily conceived by those skilled in the art within the technical scope disclosed in the invention should also be covered within the protection scope of the invention. Therefore, the protection scope of the invention should be determined by the scope of the claims.

Claims

1. A photovoltaic glass coating equipment, characterized in that, The system includes a loading zone (1), a transition zone one (2), a base film forming zone (5), a CIGS layer coating zone (6), an alkali metal fluoride evaporation zone (7), a CdS layer coating zone (8), a ZnO layer coating zone (9), an AZO layer coating zone (10), a transition zone two (11), and a unloading zone (12), arranged sequentially. Each zone is separated by a valve (13), and each zone includes at least one vacuum chamber (14). The vacuum chamber (14) is connected to a vacuum system (15). A glass conveying mechanism (16) is provided in the vacuum chamber (14), and the glass (17) is conveyed forward on the glass conveying mechanism (16). A back plate (18) is inclined on one side of the glass conveying mechanism (16), and the glass (17) leans against the back plate (18) at an angle. Several rollers (19) are provided on the side of the back plate (18) facing the glass (17). A cathode is provided in the vacuum chamber (14) of the base film area (5), the CdS layer coating area (8), the ZnO layer coating area (9) and the AZO layer coating area (10). A target tube (20) is provided on the cathode. An RF power supply is connected to the end of the target tube (20). A target material is provided on the target tube (20). Vacuum chamber 1 (601), vacuum chamber 2 (602) and vacuum chamber 3 (603) are arranged sequentially in the CIGS layer coating area (6). A cathode is arranged in vacuum chamber 1 (601), vacuum chamber 2 (602) and vacuum chamber 3 (603). A target tube (20) is arranged on the cathode. A programmable DC power supply is connected to the end of the target tube (20). A target material is arranged on the target tube (20). The target material of vacuum chamber 1 (601) is composed of Cu, In, Ga and Se. The target material of vacuum chamber 2 (602) is composed of Cu and Se. The target material of vacuum chamber 3 (603) is composed of In, Ga and Se. An alkali metal evaporation mechanism is installed in the vacuum chamber (14) of the alkali metal fluoride evaporation zone (7) to deposit alkali metal onto the surface of glass (17). A heating zone (3) is provided between the transition zone (2) and the base film forming zone (5). The heating zone (3) includes a vacuum chamber (14). A heating mechanism and a glass conveying mechanism (16) are provided in the vacuum chamber (14). A back plate (18) is inclined on one side of the glass conveying mechanism (16). The glass (17) rests on the back plate (18) at an incline, and a number of rollers (19) are provided on the side of the back plate (18) facing the glass (17). A plasma cleaning zone (4) is provided between the heating zone (3) and the film-forming zone (5). The plasma cleaning zone (4) includes a vacuum chamber (14). A plasma generator (401) and a glass conveying mechanism (16) are provided in the vacuum chamber (14). A back plate (18) is inclined on one side of the glass conveying mechanism (16). The glass (17) rests on the back plate (18) at an angle, and a number of rollers (19) are provided on the side of the back plate (18) facing the glass (17). A sawtooth protrusion (402) is provided on the ionization source of the plasma generator (401). The alkali metal evaporation mechanism includes a rotating roller (701) installed in a vacuum chamber (14), which is driven to rotate by a motor; a number of mounting rods (702) are spaced apart on the surface of the rotating roller (701), the length direction of the mounting rods (702) extends along the axial direction of the rotating roller (701), and the mounting rods (702) are connected to the controller by wires respectively; a number of crucibles (703) are spaced apart on the mounting rods (702), the crucibles (703) are equipped with heating wires (23), the crucibles (703) are filled with alkali metal fluorides, and the opening of the crucibles (703) faces outward.

2. The photovoltaic glass coating equipment as described in claim 1, characterized in that, The bottom of the glass (17) is clamped in the fixing clamp (21), which is placed on the glass conveying mechanism (16) and has a rubber pad (22) inside.

3. The photovoltaic glass coating equipment as described in claim 1, characterized in that, The heating mechanism includes a heating wire (23) disposed in a vacuum chamber (14).

4. The photovoltaic glass coating equipment as described in claim 1, characterized in that, Glass wool is provided outside the vacuum chamber (14) of the heating zone (3).

5. The photovoltaic glass coating equipment as described in claim 1, characterized in that, In the target material of vacuum chamber one (601), the area ratio of Cu, In, Ga and Se materials is 1:1:1:2; in the target material of vacuum chamber two (602), the area ratio of Cu and Se materials is 1:2; and in the target material of vacuum chamber three (603), the area ratio of In, Ga and Se materials is 1:1:

2.

6. The photovoltaic glass coating equipment as described in claim 1, characterized in that, The valve (13) includes a door frame, in which a lifting door plate is inserted. The lifting door plate is connected to the piston rod of a cylinder. The cylinder drives the lifting door plate to rise and fall, thereby realizing the connection or closure of adjacent areas.

7. The photovoltaic glass coating equipment as described in claim 1, characterized in that, A heating wire (23) is provided in the vacuum chamber (14) of the AZO layer coating area (10).

Images