Atomic layer deposition apparatus

Abstract

The application discloses an atomic layer deposition device, which comprises a main body, a reaction cavity in the main body, a plurality of reaction zones in the reaction cavity, a carrier table in the reaction cavity, and a driving assembly connected to the carrier table. Each reaction zone is used for coating a film on a substrate, and the reaction gas flowing into each reaction zone is different. The carrier table is used for placing the substrate. The driving assembly can drive the carrier table to move the substrate, so that the substrate is coated with a film in each reaction zone. The atomic layer deposition device can coat different types of films on the substrate, thereby effectively reducing the cost of film coating.

Description

TECHNICAL FIELD

[0001] The present application relates to the field of thin film deposition, and in particular to an atomic layer deposition device. BACKGROUND

[0002] In the related art, atomic layer deposition (ALD) technology is widely used in the fields of electronic device and optical element manufacturing due to its advantages of good deposition uniformity, high step coverage, precise controllable deposition thickness, high film quality and less impurities. Generally, in the atomic layer deposition process, multiple reactants are involved. After one of the reactants enters a reaction chamber and reacts with a substrate, the excess reactant and by-products are flushed away. Then, another reactant enters the reaction chamber to further react with the substrate, completing one reaction cycle. This cycle is repeated to complete atomic layer deposition of a specified thickness.

[0003] In some cases, when depositing a film on a substrate, multiple different types of thin films need to be formed on the substrate. The existing atomic layer deposition device can usually only deposit one type of film on the substrate. When different types of films need to be deposited on the substrate, multiple atomic layer deposition devices must be used to deposit films on the substrate. Therefore, this results in high cost of film deposition. SUMMARY

[0004] The present application aims to at least solve one of the problems in the prior art. To this end, the present application provides an atomic layer deposition device capable of depositing different types of films on a substrate, thereby effectively reducing the cost of film deposition.

[0005] The atomic layer deposition device according to an embodiment of the present application comprises:

[0006] a main body having a reaction chamber, the reaction chamber comprising a plurality of reaction zones, each of the reaction zones being used for depositing a film on a substrate, and reaction gases introduced into each of the reaction zones being different from each other;

[0007] a carrying table disposed in the reaction chamber, the carrying table being used for placing the substrate;

[0008] a driving assembly connected to the carrying table, the driving assembly being capable of driving the carrying table to move the substrate, so that the substrate is deposited with a film in each of the reaction zones.

[0009] According to the atomic layer deposition device provided by the embodiment of the present application, when the reaction cavity of the main body comprises a plurality of reaction zones, the reaction zones are used for coating films on the substrate, the reaction gases flowing into the reaction zones are different, the driving assembly drives the carrier table to move, and the substrate passes through different reaction zones, so that different types of films are formed on the substrate. In this way, the atomic layer deposition device can coat different types of films on the substrate, thereby effectively reducing the cost of film coating.

[0010] According to the atomic layer deposition device provided by some embodiments of the present application, the reaction cavity further comprises a sample inlet zone for allowing the substrate to enter the reaction cavity, and the driving assembly can drive the carrier table to move so as to move the carrier table from the sample inlet zone to any reaction zone.

[0011] According to the atomic layer deposition device provided by some embodiments of the present application, the reaction zones are provided in three, the three reaction zones are a first reaction zone, a second reaction zone and a third reaction zone, the sample inlet zone and the first reaction zone are spaced apart along a first direction, the second reaction zone and the third reaction zone are spaced apart along a second direction, and the sample inlet zone is arranged between the second reaction zone and the third reaction zone, and the first direction and the second direction are perpendicular.

[0012] According to the atomic layer deposition device provided by some embodiments of the present application, the driving assembly comprises a first linear motor, a second linear motor and a third linear motor, the carrier tables are provided in three, the three carrier tables are a first carrier table, a second carrier table and a third carrier table, the first linear motor is connected to the first carrier table, the second linear motor is connected to the second carrier table, and the third linear motor is connected to the third carrier table, the first linear motor is used for driving the first carrier table to move along the first direction, so as to reciprocate the first carrier table between the sample inlet zone and the first reaction zone, the second linear motor and the third linear motor are spaced apart along the second direction, the second linear motor is used for driving the second carrier table to move along the second direction, so as to reciprocate the second carrier table between the sample inlet zone and the second reaction zone, and the third linear motor is used for driving the third carrier table to move along the second direction, so as to reciprocate the third carrier table between the sample inlet zone and the third reaction zone.

[0013] According to the atomic layer deposition device provided by some embodiments of the present application, the atomic layer deposition device further comprises a lifting mechanism, the carrier tables are provided in a plurality, and the lifting mechanism is used for lifting the substrate, so that the substrate can be placed on any carrier table.

[0014] According to the atomic layer deposition apparatus of some embodiments of the present application, the lifting mechanism comprises a needle and a driving member, the needle is used to support the substrate, the driving member is connected to the needle, and the driving member can lift the needle, when the driving member drives the needle to rise and support the substrate, the substrate can be separated from the supporting table, and when the driving member drives the needle to descend and support the substrate, the substrate can be placed on the supporting table.

[0015] According to the atomic layer deposition apparatus of some embodiments of the present application, the supporting table is provided with an avoiding hole, the avoiding hole is in a strip shape, and when the supporting table is located at the sample inlet area, one end of the avoiding hole facing the sample inlet area has an opening, so that the needle can enter the avoiding hole to abut against the substrate.

[0016] According to the atomic layer deposition apparatus of some embodiments of the present application, the main body comprises a plurality of upper covers and a plurality of lower covers, each upper cover and a lower cover are connected to form the reaction area.

[0017] According to the atomic layer deposition apparatus of some embodiments of the present application, the atomic layer deposition apparatus comprises a gas inlet device and a gas extraction device, the gas inlet device and the gas extraction device are both communicated with the reaction area, the gas inlet device is used to introduce the reaction gas into the reaction chamber, the gas extraction device is used to extract the reaction gas in the reaction chamber, the atomic layer deposition apparatus comprises an isolation device, the isolation device is communicated with the reaction area, and the isolation device is used to introduce inert gas into the reaction area to isolate the reaction gas in adjacent two reaction areas.

[0018] According to the atomic layer deposition apparatus of some embodiments of the present application, the upper cover is provided with a first gas inlet and a second gas inlet which are communicated with the reaction area, the first gas inlet is communicated with the gas inlet device, the second gas inlet is communicated with the isolation device, and the second gas inlet surrounds the periphery of the first gas inlet.

[0019] Additional aspects and advantages of the present application will be made apparent from the following description. BRIEF DESCRIPTION OF DRAWINGS

[0020] The present application will be further described with reference to the drawings and embodiments, wherein:

[0021] Figure 1 It is a schematic view of the main body in the atomic layer deposition apparatus of some embodiments of the present application;

[0022] Figure 2 It is a schematic view of the upper cover in the atomic layer deposition apparatus of some embodiments of the present application;

[0023] Figure 3 Figure 1 is a schematic view of an atomic layer deposition apparatus according to an embodiment of the present application.

[0024] Reference signs:

[0025] Substrate 10, main body 11, upper cover 100, lower cover 200, reaction zone 300, first reaction zone 310, second reaction zone 320, third reaction zone 330, sample inlet zone 340, feed port 341, carrier table 400, first carrier table 410, second carrier table 420, third carrier table 430, escape hole 440, opening 441, drive assembly 500, first linear motor 510, second linear motor 520, third linear motor 530, first gas inlet 600, second gas inlet 700. DETAILED DESCRIPTION

[0026] Embodiments of the present application are described below in detail, examples of which are shown in the drawings, wherein the same or similar notations represent the same or similar elements or elements having the same or similar functions throughout. The embodiments described below by referring to the drawings are exemplary, only for explaining the present application, and cannot be understood as a limitation of the present application.

[0027] In the description of the present application, it is understood that the orientation description, such as the orientation or position relationship indicated by up, down, front, back, left, right, etc. is based on the orientation or position relationship shown in the drawings, only for the convenience of describing the present application and simplifying the description, and does not indicate or imply that the device or element indicated must have a particular orientation, be constructed and operated in a particular orientation, and therefore cannot be understood as a limitation of the present application.

[0028] In the description of the present application, if the meaning of several is more than one, the meaning of multiple is more than two, greater than, less than, more than, etc. is understood as not including the number, above, below, etc. is understood as including the number. If it is described as first, second, only for the purpose of distinguishing technical features, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of indicated technical features or implicitly indicating the order of indicated technical features.

[0029] In the description of the present application, unless otherwise explicitly limited, the words such as setting, installing, connecting, etc. should be broadly understood, and the person skilled in the art can reasonably determine the specific meaning of the above words in the present application in combination with the specific content of the technical solution.

[0030] In the description of the application, the description of the terms "one embodiment", "some embodiments", "illustrative embodiment", "example", "specific example", or "some examples" means that the specific features, structures, materials or characteristics described in connection with the embodiment or example are included in at least one embodiment or example of the application. In the description, the illustrative description of the above terms does not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described can be combined in any one or more embodiments or examples in a suitable manner.

[0031] Please refer to Figure 1 In some embodiments, the atomic layer deposition apparatus comprises a main body 11, a supporting table 400 and a driving assembly 500. The main body 11 has a reaction cavity, and the reaction cavity comprises a plurality of reaction zones 300, each of which is used for coating a film on a substrate 10, and the reaction gases introduced into each of the reaction zones 300 are different. The reaction gas comprises a first reactant and a second reactant, the first reactant can be a precursor gaseous substance, and the precursor gaseous substance can be a gaseous metal organic compound, a metal halide, etc., and the second reactant can be a gas with oxidizing or reducing property, such as water, oxygen, oxygen plasma or ammonia. The principle of atomic layer deposition belongs to the known technology, and will not be described in detail here. The supporting table 400 is arranged in the reaction cavity, and the supporting table 400 is used for placing the substrate 10. After the substrate 10 is placed on the supporting table 400, the supporting table 400 can drive the substrate 10 to move between different reaction zones 300 for coating a film.

[0032] The driving assembly 500 is connected to the supporting table 400, and the driving assembly 500 can drive the supporting table 400 to drive the substrate 10 to move, so that the substrate 10 is coated in each of the reaction zones 300. Specifically, when the reaction cavity of the main body 11 comprises a plurality of reaction zones 300, the reaction zones 300 are used for coating a film on the substrate 10, and since the reaction gases introduced into each of the reaction zones 300 are different, the driving assembly 500 drives the supporting table 400 to move, and after the substrate 10 passes through different reaction zones 300, different types of films will be formed on the substrate 10. In this way, the atomic layer deposition apparatus can coat different types of films on the substrate 10, thereby effectively reducing the cost of film coating.

[0033] The reaction zone 300 will be explained below. The above-mentioned main body 11 has a reaction cavity, and the reaction cavity comprises a plurality of reaction zones 300. Therefore, the reaction zone 300 can be a part of the reaction cavity. Specifically, the reaction cavity can be divided into three parts, and the atomic layer deposition apparatus has three reaction zones 300, and the volume of each of the reaction zones 300 can be one third of the volume of the reaction cavity.

[0034] Further, the distance between each reaction zone 300 can be a constant value, or can be a random value, which can be used to adjust the reaction time of the two reaction gases.

[0035] Further, by providing a sample loading area 340 in the reaction chamber, the substrate 10 can be conveniently loaded into the atomic layer deposition device for film deposition. Specifically, please refer to Figure 2 In some embodiments, the reaction chamber further comprises a sample loading area 340 for loading the substrate 10 into the reaction chamber, and the driving assembly 500 is capable of driving the carrier table 400 to move from the sample loading area 340 to any reaction zone 300. Please refer to Figure 3 The sample loading area 340 is provided with a loading port 341 for facilitating the loading of the substrate 10. The driving assembly 500 can comprise a linear motor connected to the carrier table 400 by bolts, and the linear motor drives the carrier table 400 to move. After the substrate 10 is placed on the carrier table 400, the substrate 10 can be loaded into any reaction zone 300 for film deposition from the sample loading area 340. In addition, by providing the sample loading area 340, the reaction chamber can be divided, thereby facilitating the identification of the processing area (i.e. the reaction zone 300) and the area to be processed (i.e. the sample loading area 340) of the atomic layer deposition device.

[0036] The above-mentioned reaction chamber comprises a plurality of reaction zones 300, wherein the plurality of reaction zones 300 can be three, five or seven. The plurality of reaction zones 300 can be arranged in a cross shape or a checkered pattern. This can facilitate the driving assembly 500 to drive the carrier table 400 to move in the horizontal direction, so as to move the carrier table 400 from one reaction zone 300 to another reaction zone 300 according to the set route. For film deposition on the substrate 10, generally three layers of different types of thin films will be deposited on the substrate 10. Therefore, the atomic layer deposition device with three reaction zones 300 can meet most of the production needs. The arrangement of the three reaction zones 300 when the atomic layer deposition device has three reaction zones 300 will be described below. Specifically, please refer to Figure 2In some embodiments, the reaction zones 300 are provided with three, i.e. a first reaction zone 310, a second reaction zone 320 and a third reaction zone 330. In a first direction, the sample loading zone 340 and the first reaction zone 310 are spaced apart, in a second direction, the second reaction zone 320 and the third reaction zone 330 are spaced apart, and the sample loading zone 340 is disposed between the second reaction zone 320 and the third reaction zone 330, and the first direction and the second direction are perpendicular. The first direction can be a front-to-back horizontal direction, and the second direction can be a left-to-right horizontal direction. By disposing the sample loading zone 340 between the second reaction zone 320 and the third reaction zone 330, and spacing apart the sample loading zone 340 and the first reaction zone 310, the substrate 10 can conveniently enter any one of the first reaction zone 310, the second reaction zone 320 and the third reaction zone 330 from the sample loading zone 340. The reason is that the first reaction zone 310, the second reaction zone 320 and the third reaction zone 330 are all arranged around the sample loading zone 340 with the sample loading zone 340 as the center. In addition, the sample loading zone 340 can be equidistant from any one of the reaction zones 300, thereby improving convenience.

[0037] Further, when the substrate 10 is coated with three different types of thin films, there are various ways to do so. One way can be to reciprocate the substrate 10 in the first reaction zone 310 to coat the substrate 10 with a first type of thin film. Then reciprocate the substrate 10 in the second reaction zone 320 to coat the substrate 10 with a second type of thin film. Reciprocate the substrate 10 in the third reaction zone 330 to coat the substrate 10 with a third type of thin film. That is, similar to the ABC way (A letter represents a different type of thin film). Another way can be to reciprocate the substrate 10 in the first reaction zone 310 to coat the substrate 10 with a first type of thin film. Then reciprocate the substrate 10 in the second reaction zone 320 to coat the substrate 10 with a second type of thin film. Reciprocate the substrate 10 in the first reaction zone 310 to coat the substrate 10 with a first type of thin film. Reciprocate the substrate 10 in the third reaction zone 330 to coat the substrate 10 with a third type of thin film. That is, similar to the ABAC way. In addition, there are also some ways such as AABBCC, ABABC, ACACB, etc., which will not be described here.

[0038] The following will be described in detail how the driving assembly 500 drives the carrier table 400 to move from the sample loading zone 340 to any one of the reaction zones 300 when the reaction zones 300 have three. Specifically, please refer to Figure 3In some embodiments, the driving assembly 500 comprises a first linear motor 510, a second linear motor 520 and a third linear motor 530. The carrier table 400 is provided with three carrier tables, i.e., a first carrier table 410, a second carrier table 420 and a third carrier table 430. The first linear motor 510 is connected to the first carrier table 410, the second linear motor 520 is connected to the second carrier table 420, and the third linear motor 530 is connected to the third carrier table 430. The moving direction of the mover of the first linear motor 510 is the same as the first direction, and the first linear motor 510 is used to drive the first carrier table 410 to move along the first direction, so that the first carrier table 410 reciprocates between the sample inlet area 340 and the first reaction area 310. The moving direction of the mover of the second linear motor 520 and the moving direction of the mover of the third linear motor 530 are both the same as the second direction. The second linear motor 520 and the third linear motor 530 are spaced apart along the second direction. The second linear motor 520 is used to drive the second carrier table 420 to move along the second direction, so that the second carrier table 420 reciprocates between the sample inlet area 340 and the second reaction area 320. The third linear motor 530 is used to drive the third carrier table 430 to move along the second direction, so that the third carrier table 430 reciprocates between the sample inlet area 340 and the third reaction area 330. Specifically, the first linear motor 510 can drive the first carrier table 410 to move the substrate 10 to the first reaction area 310, so that the substrate 10 is coated in the first reaction area 310. The second linear motor 520 can drive the second carrier table 420 to move the substrate 10 to the second reaction area 320, so that the substrate 10 is coated in the second reaction area 320. The third linear motor 530 can drive the third carrier table 430 to move the substrate 10 to the third reaction area 330, so that the substrate 10 is coated in the third reaction area 330.

[0039] The linear motor has the following characteristics. 1. Simple structure: Since the linear motor does not need additional devices to convert rotary motion into linear motion, the structure of the system is greatly simplified, and the weight and volume are greatly reduced. 2. High positioning accuracy: When linear motion is required, the linear motor can achieve direct transmission, eliminating various positioning errors caused by intermediate links. Therefore, the positioning accuracy is high. 3. Fast response, high sensitivity, and good tracking effect. The linear motor is easy to be magnetically suspended, so that there is always a certain air gap between the rotor and the stator without contact, eliminating the contact friction resistance between the stator and the stator, greatly improving the sensitivity, speed and servo performance of the system. 4. Safe and reliable, long service life. The linear motor has no contact transmission force, and the mechanical friction loss is almost zero, so the failure rate is low, maintenance-free, safe and reliable in operation, and has a long service life. In this way, using the linear motor can improve the efficiency of atomic layer deposition equipment and reduce the cost of coating.

[0040] Further, the linear motor includes a stator and a mover. The mover is connected to the carrier table 400, and the linear motor can drive the carrier table 400 to move, so as to drive the substrate 10 to move for film deposition. In the film deposition process, the mover can reciprocate in the first direction or the second direction, so as to facilitate the atomic layer deposition device to deposit the film on the substrate 10.

[0041] It should be noted that, in addition to the linear motor, the driving assembly 500 can also include a linear module. The linear module can also achieve the movement of the substrate 10 in the horizontal direction.

[0042] Further, the following describes how to transfer the substrate 10 to the first carrier table 410 or other carrier tables 400 after the substrate 10 is placed in the sample inlet area 340. Specifically, in some embodiments, the carrier tables 400 are provided in plurality, for example, three carrier tables 400, which are the first carrier table 410, the second carrier table 420, and the third carrier table 430. The atomic layer deposition device further includes a lifting mechanism, which is used to lift the substrate 10, so as to enable the substrate 10 to be placed on any one of the first carrier table 410, the second carrier table 420, and the third carrier table 430. In this way, the lifting mechanism can enable the substrate 10 to be placed on any one of the first carrier table 410, the second carrier table 420, and the third carrier table 430.

[0043] Further, in some embodiments, the lifting mechanism includes a driving member and a top pin. The driving member is connected to the top pin and can drive the top pin to lift. The top pin is used to support the substrate 10. When the driving member drives the top pin to lift and support the substrate 10, the substrate 10 can be lifted away from the carrier table 400. When the driving member drives the top pin to lower and support the substrate 10, the substrate 10 can be placed on the carrier table 400. The driving member can be a pneumatic cylinder or the like. Taking the case that the substrate 10 is placed on the first carrier table 410 as an example. The top pin is arranged below the first carrier table 410. After the top pin is driven by the driving member, the top pin is lifted to lift the substrate 10, and the substrate 10 is lifted away from the surface of the first carrier table 410. Then, the first carrier table 410 is transferred by the first linear motor 510, and the second carrier table 420 comes below the substrate 10, and the top pin is lowered, so that the substrate 10 is placed on the second carrier table 420. In this way, the substrate 10 is transferred from the first carrier table 410 to the second carrier table 420. Specifically, by lifting the substrate 10 through the top pin in the lifting mechanism, the substrate 10 can be placed on any one of the first carrier table 410, the second carrier table 420, and the third carrier table 430. Further, after the substrate 10 is deposited with a film in the first reaction area 310, the substrate 10 can enter the second reaction area 320 for film deposition.

[0044] In addition, in order to avoid the influence of the top pin on the movement of the carrier table 400, an avoiding hole 440 can be arranged on the carrier table 400. Please refer toFigure 3 In some embodiments, the carrier table 400 is provided with an avoiding hole 440, which is in a strip shape, and has an opening 441 at one end of the avoiding hole 440 facing the sample area 340 when the carrier table 400 is located at the sample area 340, so that the probe enters the avoiding hole 440 to abut against the substrate 10. The structure of the carrier table 400 can be a "fork" structure, and the avoiding hole 440 can be a rectangular hole or a strip hole, which is located in the middle of the carrier table 400. It is conceivable that the first carrier table 410, the second carrier table 420 and the third carrier table 430 are all provided with the avoiding hole 440. Taking the reciprocating movement of the first carrier table 410 between the sample area 340 and the first reaction area 310 as an example. When the first carrier table 410 moves from the first reaction area 310 to the sample area 340, the avoiding hole 440 of the first carrier table 410 moves relative to the probe, that is, the probe enters the avoiding hole 440 from the opening 441. The probe will not collide with the first carrier table 410. At this time, the probe is in a rising state, which lifts the substrate 10, and the substrate 10 is above the first carrier table 410. Then, the probe is lowered, so that the substrate 10 is placed on the first carrier table 410, and then the first carrier table is driven to move from the sample area 340 to the first reaction area 310, so that the substrate 10 can be reacted in the first reaction area 310. Similarly, the same is true for the reciprocating movement of the second carrier table 420 between the sample area 340 and the second reaction area 320, and the reciprocating movement of the third carrier table 430 between the sample area 340 and the third reaction area 330.

[0045] Further, the structure of the main body 11 is introduced. Please refer to Figure 1 In some embodiments, the main body 11 includes a plurality of upper covers 100 and a plurality of lower covers 200, each upper cover 100 and a lower cover 200 are connected to form a reaction area 300, and each reaction area 300 is separated from each other. For example, the main body 11 can include three upper covers 100 and three lower covers 200, each upper cover 100 and a lower cover 200 are connected to form a reaction area 300. That is, the three upper covers 100 and the three lower covers 200 form the first reaction area 310, the second reaction area 320 and the third reaction area 330, respectively. Among them, after the upper cover 100 and the lower cover 200 are connected, each reaction area 300 can be separated, so as to avoid the reaction gas in the plurality of reaction areas 300 from being mixed together, which affects the quality of the film coating. That is, the reaction gas in the first reaction area 310 will not enter the second reaction area 320 and the third reaction area 330, the reaction gas in the second reaction area 320 will not enter the first reaction area 310 and the third reaction area 330, and the reaction gas in the third reaction area 330 will not enter the first reaction area 310 and the second reaction area 320.

[0046] Further, the following introduces how the reaction gas enters the reaction zone 300. Specifically, in some embodiments, the atomic layer deposition apparatus comprises a gas inlet device and a gas extraction device, both of which are communicated with the reaction zone 300, the gas inlet device is used to introduce the reaction gas into the reaction chamber, and the gas extraction device is used to extract the reaction gas in the reaction chamber. After the substrate 10 enters the reaction zone 300, the reaction gas is introduced into the reaction zone 300 through the gas inlet device, so as to deposit a film on the substrate 10. After the film deposition is completed, the reaction gas in the reaction zone 300 is extracted through the gas extraction device, so as to avoid the reaction gas remaining in the reaction zone 300.

[0047] Further, the above describes the way of connecting the upper cover 100 and the lower cover 200 to separate the reaction gases in each reaction zone 300. In order to further improve the isolation effect, the "gas wall" method can also be used. Specifically, in some embodiments, the atomic layer deposition apparatus comprises an isolation device, which is communicated with the reaction zone 300, and the isolation device is used to introduce inert gas into the reaction zone 300 to isolate the reaction gases in adjacent two reaction zones 300. After the inert gas is introduced into the reaction zone 300, the inert gas can block the reaction gas to prevent the reaction gas from overflowing. This can achieve the isolation effect and prevent the combination of two different reaction gases in two reaction zones 300. In addition, in order to ensure good isolation effect, the isolation device can be started all the time during film deposition, so as to continuously introduce inert gas into the reaction zone 300. The isolation device can be a gas pump, which can introduce inert gas into the reaction zone 300.

[0048] Further, please refer to Figure 2 In some embodiments, the upper cover 100 is provided with a first gas inlet 600 and a second gas inlet 700 communicated with the reaction zone 300, the first gas inlet 600 is communicated with the gas inlet device, the second gas inlet 700 is communicated with the isolation device, and the second gas inlet 700 surrounds the periphery of the first gas inlet 600. Specifically, by surrounding the periphery of the first gas inlet 600 with the second gas inlet 700, the inert gas is introduced into the second gas inlet 700, and the reaction gas is introduced into the first gas inlet 600, so that the inert gas can surround the periphery of the reaction gas. That is, the inert gas can surround the reaction gas to prevent the reaction gas from escaping. Wherein, the shape of the second gas inlet 700 can be square or circular, so as to effectively block the reaction gas with the inert gas.

[0049] Further, the atomic layer deposition apparatus can also be applied in plasma enhanced atomic layer deposition technology. For example, in some embodiments, the atomic layer deposition apparatus further comprises a radio frequency generator for generating plasma in the reaction cavity. The radio frequency generator is used to assist atomic layer deposition, which can perform atomic layer deposition at a lower temperature, is suitable for depositing thin films on heat-sensitive substrates, is beneficial to the adjustment of substrate temperature and can reduce power consumption to a certain extent. It can be understood that the atomic layer deposition technology assisted by radio frequency plasma technology is a known technology in the art, and the specific principle thereof will not be described here.

[0050] The embodiments of the present application are described in detail above with reference to the drawings, but the present application is not limited to the above-described embodiments, and various changes can be made within the knowledge of those skilled in the art without departing from the spirit of the present application. In addition, the embodiments of the present application and the features in the embodiments can be combined with each other without conflict.

Claims

1. An atomic layer deposition apparatus, characterized in that, include: The main body has a reaction chamber, which includes multiple reaction zones. Each reaction zone is used to deposit a film on a substrate, and the reaction gas introduced into each reaction zone is different. A support platform is disposed in the reaction chamber, and the support platform is used to place the substrate; A driving component is connected to the support platform, and the driving component can drive the support platform to move the substrate so that the substrate can be coated in each of the reaction zones; The reaction chamber further includes a sample inlet area for the substrate to enter the reaction chamber, and the driving component is capable of driving the stage to move from the sample inlet area to any of the reaction areas. The atomic layer deposition apparatus further includes a lifting mechanism, and multiple support platforms are provided. The lifting mechanism is used to lift the substrate so that the substrate can be placed on any of the support platforms. The lifting mechanism includes a pin and a drive member. The pin is used to hold the substrate, and the drive member is connected to the pin. The drive member can make the pin move up and down. When the drive member drives the pin to hold the substrate to rise, the substrate can leave the support platform. When the drive member drives the pin to hold the substrate to fall, the substrate can be placed on the support platform. The support platform is provided with a clearance hole, which is strip-shaped. When the support platform is located at the sample injection area, the end of the clearance hole facing the sample injection area has an opening, so that the ejector pin can enter the clearance hole to abut against the substrate.

2. The atomic layer deposition apparatus according to claim 1, characterized in that, The reaction zone is provided with three reaction zones, namely a first reaction zone, a second reaction zone and a third reaction zone. Along the first direction, the sample injection zone and the first reaction zone are spaced apart. Along the second direction, the second reaction zone and the third reaction zone are spaced apart. The sample injection zone is located between the second reaction zone and the third reaction zone. The first direction and the second direction are perpendicular.

3. The atomic layer deposition apparatus according to claim 2, characterized in that, The driving assembly includes a first linear motor, a second linear motor, and a third linear motor. Three support platforms are provided, namely a first support platform, a second support platform, and a third support platform. The first linear motor is connected to the first support platform, the second linear motor is connected to the second support platform, and the third linear motor is connected to the third support platform. The first linear motor drives the first support platform to move along a first direction, causing the first support platform to reciprocate between the sample injection area and the first reaction area. The second and third linear motors are spaced apart along a second direction. The second linear motor drives the second support platform to move along the second direction, causing the second support platform to reciprocate between the sample injection area and the second reaction area. The third linear motor drives the third support platform to move along the second direction, causing the third support platform to reciprocate between the sample injection area and the third reaction area.

4. The atomic layer deposition apparatus according to claim 1, characterized in that, The main body includes multiple upper covers and multiple lower covers, each of the upper covers and one of the lower covers being connected to form the reaction zone.

5. The atomic layer deposition apparatus according to claim 4, characterized in that, The atomic layer deposition apparatus includes an inlet device and an extractor device, both of which are connected to the reaction zone. The inlet device is used to introduce the reaction gas into the reaction chamber, and the extractor device is used to extract the reaction gas from the reaction chamber. The atomic layer deposition apparatus also includes an isolation device, which is connected to the reaction zone. The isolation device is used to introduce an inert gas into the reaction zone to isolate the reaction gas in two adjacent reaction zones.

6. The atomic layer deposition apparatus according to claim 5, characterized in that, The top cover is provided with a first air inlet and a second air inlet connected to the reaction zone. The first air inlet is connected to the air intake device, and the second air inlet is connected to the isolation device. The second air inlet surrounds the periphery of the first air inlet.

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