Method for preparing high-temperature-induced color-changing material and application thereof

Abstract

The application provides a preparation method and application of a high-temperature-induced color-changing material. The method comprises the following steps: combining an amorphous film with active oxygen-containing groups on the surface of a temperature-resistant substrate subjected to cleaning and activation treatment through chemical bonding, and controlling the refractive index of the amorphous film to be higher than the refractive index of the temperature-resistant substrate, and the difference between the two not being less than 0.17, so that a dense and uniform high-temperature-induced color-changing coating is formed on the surface of the temperature-resistant substrate. The high-temperature-induced color-changing material prepared through the above method changes the crystal structure and electromagnetic properties of the amorphous film when subjected to high-temperature annealing, and then changes the refractive index, forms an optical path difference by using the difference between the refractive index of the amorphous film and the refractive index of the temperature-resistant substrate, and thus forms various different colors.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of material dyeing, and in particular to a preparation method of high-temperature-induced color-changing material and application thereof. BACKGROUND

[0002] With the development of science and technology, people are constantly seeking intelligent materials with new properties and new functions, and temperature-sensitive color-changing materials have attracted people's attention. High-temperature-induced color change refers to a temperature-sensitive color-changing material that changes from one color to another color by heating. It has been widely used in sensing, textile, printing, transportation, daily decoration, chemical anti-counterfeiting, scientific research and other fields, showing potential huge economic and social benefits.

[0003] The high-temperature-induced color-changing material prepared in the prior art is applied to industrial production, but the existing color-changing pigment does not have environmental serviceability; it does not have color-changing ability at high temperature; it is easily damaged in extreme environments such as strong corrosive systems and strong ultraviolet radiation, and loses its color-changing ability.

[0004] Therefore, it is necessary to design an improved preparation method of temperature-induced color-changing material to solve the above problems. SUMMARY

[0005] The purpose of the present application is to provide a preparation method of high-temperature-induced color-changing material and application thereof.

[0006] To achieve the above-mentioned purposes, the present application provides a preparation method of high-temperature-induced color-changing material, comprising the following steps:

[0007] S1, activating the surface of a pre-washed temperature-resistant substrate to obtain a pretreated temperature-resistant substrate;

[0008] S2, combining a predetermined thickness of amorphous film with the pretreated temperature-resistant substrate in step S1 by chemical bonding through a predetermined method, i.e. preparing a high-temperature-induced color-changing material; the difference between the refractive index of the amorphous film and the refractive index of the temperature-resistant substrate is not less than 0.17.

[0009] Further, the refractive index of the amorphous film is greater than the refractive index of the temperature-resistant substrate.

[0010] Further, the amorphous film is uniformly attached to each layer of the surface of the pretreated temperature-resistant substrate in step S2; and the total thickness of the amorphous film on the high-temperature-induced color-changing material is 5-1000nm.

[0011] Further, the amorphous thin film is one or more of the following: one or more of a single element, a nitride, a phosphide, an arsenide, an oxide, a sulfide, a carbide, a fluoride, which is composed of one or more of the following predetermined elements: Mg, Ca, Sr, Ba, B, Al, Ga, In, Si, Ge, Sn, Sb, Cu, Ag, Au, Zn, Cd, Sc, Y, La, Ce, Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, W, Fe, Co, Ni, Ru, Pd, Os, Ir, Pt.

[0012] Further, the temperature-resistant substrate comprises one of the following: a metal material, an inorganic non-metal material, a composite material composed of the metal material and the inorganic non-metal material.

[0013] Further, the metal material comprises one or more of the following: Be, Mg, Al, Ga, In, Ge, Sn, Sb, Cu, Ag, Au, Zn, Cd, Sc, Y, La, Ce, Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, W, Fe, Co, Ni, Ru, Pd, Os, Ir, Pt; and the inorganic non-metal material comprises one of the following: a cementing material, a ceramic, a cast stone, a carbon material, a non-metallic mineral, a semiconductor material, and a block, a fiber, a fabric made of the semiconductor material.

[0014] Further, in step S1, the cleaning process comprises the following steps: sanding, washing in a solution, and drying; the solution comprises one or more of the following: water, ethanol, acetone, ethyl acetate, laundry detergent, dishwashing liquid, soap, acid, alkali, and salt solution; the washing method comprises one or more of the following: soaking, rubbing, ultrasonic washing, stirring washing, and rinsing; and the surface activation method comprises one of the following: plasma treatment, ultrasonic treatment, high-energy radiation treatment, supercritical fluid treatment, metal ion complexation, grafting, and etching.

[0015] Further, in step S2, the method for preparing the amorphous thin film comprises one of the following: improved rotating atomic layer deposition, molecular layer deposition, layer-by-layer self-assembly, multiphoton ionization, chemical vapor deposition, vacuum sputtering, magnetron sputtering, electroplating, chemical plating, and chemical bonding.

[0016] Further, the surface structure and roughness of the amorphous thin film are consistent with those of the pretreated temperature-resistant substrate.

[0017] The application also provides an application of the high-temperature-induced color-changing material prepared by the preparation method, wherein the high-temperature-induced color-changing material is subjected to heat treatment at 400-1500℃, and the high-temperature-induced color-changing material shows different colors at different temperatures, and can be applied to high-temperature detection in extremely harsh environments.

[0018] The beneficial effects of the present application are:

[0019] 1. The preparation method of the high-temperature-induced color-changing material provided by the present application combines the amorphous film with the temperature-resistant substrate which has been cleaned and activated through chemical bonding, and controls the refractive index of the amorphous film to be higher than that of the temperature-resistant substrate, and the difference between the two is not less than 0.17. The high-temperature-induced color-changing material prepared in the above manner changes the crystal structure and electromagnetic properties of the amorphous film during high-temperature annealing, and further changes the refractive index thereof. The difference between the refractive index of the amorphous film and that of the temperature-resistant substrate forms an optical path difference, thereby forming various colors.

[0020] 2. The preparation method of the high-temperature-induced color-changing material provided by the present application chemically bonds and grows several layers of inert amorphous film on the surface of the temperature-resistant substrate, which can further enhance the corrosion resistance and wear resistance of the temperature-resistant substrate, and has excellent serviceability. The high-temperature-induced color-changing material still has stable color and color-changing effect under extreme environments such as strong corrosion system and strong ultraviolet radiation, and can be widely used in high-temperature detection under extremely harsh environments. When the high-temperature-induced color-changing material is applied to the surface of a metal, it can improve the corrosion resistance, seawater erosion resistance and oxidation resistance of the metal. In addition, it can also endow the metal with anti-fake properties. When the high-temperature-induced color-changing material is applied to the surface of a non-metallic material, it can improve the temperature resistance and anti-fake properties of the non-metallic material. BRIEF DESCRIPTION OF DRAWINGS

[0021] Figure 1 The optical photographs of the p-type silicon wafer of the present application and the p-type silicon wafer high-temperature-induced color-changing material in Examples 1-15 after treatment at different deposition cycle numbers and different temperatures.

[0022] Figure 2 The optical photographs of the stainless steel wafer temperature-resistant substrate of the present application and the stainless steel wafer high-temperature-induced color-changing material in Example 16 before and after high-temperature treatment.

[0023] Figure 3 The optical photographs of the basalt fiber temperature-resistant substrate of the present application and the basalt fiber high-temperature-induced color-changing material in Example 17 before and after high-temperature treatment.

[0024] Figure 4 The optical photographs of the basalt fiber high-temperature-induced color-changing material in Comparative Example 1 before and after high-temperature treatment.

[0025] Figure 5 The optical photograph of the p-type silicon wafer high-temperature-induced color-changing material in Comparative Example 2 after treatment. DETAILED DESCRIPTION

[0026] In order to make the purpose, technical solutions and advantages of the present application clearer, the present application will be described in detail below with reference to the drawings and specific examples.

[0027] It should be noted that, in order to avoid obscuring the present application with unnecessary details, only the structures and / or processing steps closely related to the solution of the present application are shown in the drawings, and other details not closely related to the present application are omitted.

[0028] In addition, it should be noted that the term "comprise", "include" or any other variant thereof is intended to cover non-exclusive inclusion, so that a process, method, article or equipment including a series of elements not only includes those elements, but also includes other elements not explicitly listed or inherent to such a process, method, article or equipment.

[0029] A preparation method of a high-temperature-induced color-changing material, comprising the following steps:

[0030] S1, surface activation of a pre-cleaned temperature-resistant substrate to obtain a pretreated temperature-resistant substrate; if the temperature-resistant substrate has surface activity, directly proceed to step S2; the cleaning process is: first polishing with sandpaper, then washing in a solution, and finally drying; the solution includes one or more of water, ethanol, acetone, ethyl acetate, laundry detergent, dishwashing liquid, soap, acid, base and salt solution; the washing method includes one or more of soaking, scrubbing, ultrasonic washing, stirring washing and rinsing;

[0031] S2, an amorphous film of a predetermined thickness is combined with the pretreated temperature-resistant substrate in step S1 by chemical bonding through a predetermined method, i.e. a high-temperature-induced color-changing material is prepared; the difference between the refractive index of the amorphous film and the refractive index of the temperature-resistant substrate is not less than 0.17.

[0032] Wherein, the refractive index of the amorphous film is greater than the refractive index of the temperature-resistant substrate; the refractive index of the amorphous film increases with increasing temperature.

[0033] In this way, the surface of the temperature-resistant substrate is treated, and the amorphous films are combined together in a chemical bonding manner by repeated deposition on the surface thereof; and the amorphous films are highly adhered to form a dense and uniform ultrathin high-conformal coating, which has good conformality and uniformity, so that the prepared high-temperature-induced color-changing material is conducive to subsequent stable application in various extreme environments.

[0034] Specifically, in some embodiments of the present application, each layer of the amorphous film on the surface of the pretreated temperature-resistant substrate in step S2 is uniformly attached; the total thickness of the amorphous film on the high-temperature-induced color-changing material is 5-1000 nm; and the amorphous film on the surface of the pretreated temperature-resistant substrate is a dense and uniform ultrathin high-conformal coating.

[0035] Thus, the thickness of the amorphous film is controlled to vary within a predetermined range, so that the optical path of light in the amorphous film changes, resulting in different changes in color. However, if the thickness of the film is too low, no color change will occur, and if the thickness of the film is too high, the color that has already appeared will reappear, and the film will be damaged to varying degrees, making it difficult to ensure that the surface structure and roughness of the amorphous film are consistent with the pretreated temperature-resistant substrate, which is not conducive to the subsequent high-temperature-induced color-changing material exhibiting different uniform color changes at high temperatures.

[0036] Specifically, in some embodiments of the present application, the amorphous film is one or more of a single element, a nitride, a phosphide, an arsenide, an oxide, a sulfide, a carbide, and a fluoride composed of one or more of predetermined elements, wherein the predetermined elements include one of Mg, Ca, Sr, Ba, B, Al, Ga, In, Si, Ge, Sn, Sb, Cu, Ag, Au, Zn, Cd, Sc, Y, La, Ce, Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, W, Fe, Co, Ni, Ru, Pd, Os, Ir, and Pt.

[0037] The temperature-resistant substrate includes one of a metal material, an inorganic non-metallic material, a silicon wafer, and a composite material composed of the metal material and the inorganic non-metallic material; the metal material is composed of a non-radioactive metal element or an alloy of non-radioactive metal elements; the non-radioactive metal element includes one or more of Be, Mg, Al, Ga, In, Ge, Sn, Sb, Cu, Ag, Au, Zn, Cd, Sc, Y, La, Ce, Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, W, Fe, Co, Ni, Ru, Pd, Os, Ir, and Pt; the inorganic non-metallic material includes one of a cementing material, a ceramic, a cast stone, a carbon material, a non-metallic mineral, and a semiconductor material, and a block, a fiber, and a fabric made of the same. In particular, the silicon wafer, carbon fiber, and basalt fiber do not need to be polished as described in step S1.

[0038] Specifically, in some embodiments of the present application, the surface activation method in step S1 includes one of plasma treatment, ultrasonic treatment, high-energy ray treatment, supercritical fluid treatment, metal ion complexation, grafting, and etching.

[0039] Specifically, in some embodiments of the present application, the method for preparing the amorphous film in step S2 includes one of improved rotating atomic layer deposition, molecular layer deposition, layer-by-layer self-assembly, multiphoton ionization, chemical vapor deposition, vacuum sputtering, magnetron sputtering, electroplating, chemical plating, and chemical bonding. The surface structure and roughness of the pretreated temperature-resistant substrate and the amorphous film are consistent.

[0040] Further, the application provides a high-temperature-induced color-changing material, which, after being heat-treated at 400-1500 ℃, shows different colors at different temperatures and can be applied to high-temperature detection in extremely harsh environments.

[0041] In this way, the prepared high-temperature-induced color-changing material changes the crystal structure and electromagnetic properties of the amorphous film during high-temperature annealing, thereby changing the refractive index, forming an optical path difference by using the difference in refractive index between the amorphous film and the refractive index of the temperature-resistant substrate, and forming various colors. In addition, by chemically bonding and growing several layers of inert amorphous film on the surface of the temperature-resistant substrate, the corrosion resistance and wear resistance of the temperature-resistant substrate can be enhanced, and excellent serviceability can be achieved. The color and color-changing effect are still stable under extreme environments such as strong corrosion systems and strong ultraviolet radiation. Therefore, the high-temperature-induced color-changing material can be widely used in high-temperature detection in extremely harsh environments. When the high-temperature-induced color-changing material is applied to the surface of a metal, the corrosion resistance, seawater erosion resistance, and oxidation resistance of the metal can be improved, and the metal can also be given anti-counterfeiting properties. When the high-temperature-induced color-changing material is applied to the surface of a non-metallic material, the temperature resistance and anti-counterfeiting properties of the non-metallic material can be improved.

[0042] The preparation method of the high-temperature-induced color-changing material of the application will be further described below in combination with specific examples.

[0043] Example 1

[0044] The present embodiment provides a preparation method of a high-temperature-induced color-changing material, which comprises the following steps:

[0045] S1, the pre-cleaned p-type silicon wafer temperature-resistant substrate is surface-activated to obtain a pretreated p-type silicon wafer temperature-resistant substrate; the cleaning process is as follows: first, sanding, then ultrasonic washing in a mixed solution of water and anhydrous ethanol at a volume ratio of 1:1 for 30 min, and finally drying; the activation process is as follows: the cleaned p-type silicon wafer temperature-resistant substrate is placed in a plasma cleaning instrument for 3 min.

[0046] S2, the amorphous film is combined with the pretreated p-type silicon wafer temperature-resistant substrate in step S1 by chemical bonding through an improved rotary atomic layer deposition method, i.e., a p-type silicon wafer high-temperature-induced color-changing material is prepared; the improved rotary atomic layer deposition method is used for 500 times of TiO2 deposition, the thickness of the amorphous film is 50 nm, the difference in refractive index between the amorphous film and the p-type silicon wafer temperature-resistant substrate is 1.036, the refractive index of the amorphous film is 2.493, and the refractive index of the p-type silicon wafer temperature-resistant substrate is 1.457.

[0047] This embodiment also provides an application of the high-temperature induced color-changing material prepared according to the method described in this embodiment. The prepared p-type silicon wafer high-temperature induced color-changing material is heated to 700°C at a rate of 5°C / min and held at that temperature for 5 hours, and finally cooled naturally. The final displayed color is as follows: Figure 1 As shown.

[0048] Examples 2-5

[0049] Examples 2-5 each provide an application of a high-temperature induced color-changing material. Compared to Example 1, the only difference is the final temperature reached during the high-temperature treatment. The high-temperature induced color-changing material used and other experimental conditions are the same as in Example 1, and will not be repeated here. In Examples 1-5, the thickness of the amorphous film on the surface of the high-temperature induced color-changing material on the p-type silicon wafer and the treatment temperature are shown in Table 1. The final displayed color is as shown in Table 5. Figure 1 As shown.

[0050] Example 6, Example 11

[0051] Examples 6 and 11 respectively provide a method for preparing a high-temperature induced color-changing material. Compared with Example 1, the difference lies in the thickness of the amorphous film on the surface of the p-type silicon wafer. Specific parameters are shown in Table 1. The remaining steps are the same as in Example 1 and will not be repeated here.

[0052] Furthermore, Examples 6 and 11 respectively provide an application of a high-temperature induced color-changing material. The prepared p-type silicon wafer high-temperature induced color-changing material is heated to 700°C at a rate of 5°C / min and held at that temperature for 5 hours, finally allowing it to cool naturally. The final displayed color is as follows... Figure 1 As shown.

[0053] Examples 7-10

[0054] Examples 7-10 each provide an application of a high-temperature induced color-changing material. Compared with Example 6, the only difference is the heat treatment temperature of the high-temperature induced color-changing material on the p-type silicon wafer, as shown in Table 2. The final displayed color is as follows: Figure 1 As shown. The remaining steps are the same as in Example 6, and will not be repeated here.

[0055] Examples 12-15

[0056] Examples 12-15 each provide an application of a high-temperature induced color-changing material. Compared with Example 11, the only difference is the heat treatment temperature of the high-temperature induced color-changing material on the p-type silicon wafer, as shown in Table 2. The final displayed color is as follows: Figure 1 As shown. The remaining steps are the same as in Example 11, and will not be repeated here.

[0057] Example 16

[0058] Example 16 provides a method for preparing a high-temperature induced color-changing material. Compared with Example 1, the differences are that a different heat-resistant substrate is used, a different number of cycles of the improved spin-on atomic layer deposition (ALD) method is used, and a different cleaning process is described in step S1. In this example, the heat-resistant substrate is a stainless steel sheet, the improved spin-on atomic layer deposition (ALD) method is used for 2000 cycles, and the cleaning process described in step S1 is as follows: first, the material is polished with sandpaper, then ultrasonically washed in anhydrous ethanol for 10 minutes, and finally dried. The remaining steps are the same as in Example 1 and will not be repeated here.

[0059] Furthermore, this embodiment also provides an application of a high-temperature induced color-changing material. The difference compared to Embodiment 1 lies in the heat treatment temperature of the high-temperature induced color-changing material for stainless steel sheets. In this embodiment, the heat treatment temperature is 550℃, as shown in Table 2. The final displayed color is as follows: Figure 2 As shown. The remaining steps are the same as in Example 1, and will not be repeated here.

[0060] Example 17

[0061] Example 17 provides a method for preparing a high-temperature induced color-changing material. Compared with Example 1, the differences are that a different heat-resistant substrate is used, a different number of cycles of the improved rotary atomic layer deposition method is used, and a different cleaning process is described in step S1. In this example, the heat-resistant substrate used is basalt fiber, the number of ALD cycles is 2000, and the cleaning process described in step S1 is as follows: the basalt fiber is immersed in anhydrous ethanol for 40 minutes of ultrasonic washing and then dried. The remaining steps are the same as in Example 1 and will not be repeated here.

[0062] Furthermore, this embodiment also provides an application of a high-temperature induced color-changing material. The difference compared to Embodiment 1 lies in the heat treatment temperature of the high-temperature induced color-changing material for stainless steel sheets. In this embodiment, the heat treatment temperature is 800℃, as shown in Table 2. The final displayed color is as follows: Figure 3 As shown. The remaining steps are the same as in Example 1, and will not be repeated here.

[0063] Table 1. Experimental parameters in Examples 1-17

[0064]

[0065] Example 18

[0066] This embodiment provides a method for preparing a high-temperature induced color-changing material, including the following steps:

[0067] S1. The pre-cleaned copper sheet heat-resistant substrate is surface activated to obtain a pre-treated copper sheet heat-resistant substrate; the cleaning process is as follows: first, it is polished with sandpaper, then ultrasonically washed in anhydrous ethanol for 10 minutes, and finally dried; the activation process is as follows: first, the cleaned copper sheet heat-resistant substrate is placed in a plasma cleaner for 5 minutes for preliminary activation, and then TiO2 is deposited 1000 times using a rotary atomic layer deposition method to increase the active groups of the copper sheet heat-resistant substrate and enhance the surface activity of the copper sheet;

[0068] S2. The amorphous thin film is chemically bonded to the pretreated copper heat-resistant substrate described in step S1 using PECVD (plasma-enhanced chemical vapor deposition) to deposit Al2O3 for 15 min. The thickness of the amorphous thin film is 90 nm.

[0069] This embodiment also provides the application of the high-temperature induced color-changing material prepared according to the method described in this embodiment. The prepared copper sheet high-temperature induced color-changing material is heated to 1200°C at a rate of 5°C / min and kept at that temperature for 5 hours, and finally cooled naturally.

[0070] In Example 18, the thickness of the amorphous film on the surface of the copper sheet high-temperature induced discoloration material and the processing temperature are shown in Table 2.

[0071] Table 2 Experimental parameters in Example 18

[0072]

[0073] Comparative Example 1

[0074] This comparative example provides a method for preparing a high-temperature induced color-changing material. Compared with Example 17, the only difference is that the refractive index of the amorphous film used in step S2 is different from the difference between the refractive index and the refractive index of the heat-resistant substrate. The amorphous film used in this comparative example is Al2O3, with a refractive index of 1.770, and the refractive index of the basalt fiber is 1.457. The remaining steps are the same as in Example 1 and will not be repeated here.

[0075] Furthermore, this embodiment also provides an application of a high-temperature induced color-changing material, with steps identical to those in Example 17, and will not be repeated here. The final displayed color is as follows: Figure 4 As shown in the image. The final result shows no color change before and after processing.

[0076] Comparative Example 2

[0077] This comparative example provides a method for preparing a high-temperature induced color-changing material. Compared with Example 1, the only difference is that the amorphous film used in step S2 is not uniformly attached (i.e., the thickness of the amorphous film is inconsistent at different locations on the p-type silicon wafer heat-resistant substrate). The remaining steps are the same as in Example 1 and will not be repeated here.

[0078] Furthermore, this embodiment also provides an application of a high-temperature induced color-changing material, with steps identical to those in Embodiment 1, and will not be repeated here. The final displayed color is as follows: Figure 5 As shown in the figure. The results show that the high-temperature induced color-changing material prepared in this comparative example exhibits uneven color at high temperatures.

[0079] In summary, the method for preparing a high-temperature induced color-changing coating provided by this invention involves chemically bonding an amorphous thin film to active oxygen-containing groups on the surface of a heat-resistant substrate that has undergone cleaning and activation treatment. The refractive index of the amorphous thin film is controlled to be higher than that of the heat-resistant substrate, with the difference being no less than 0.17. Furthermore, the thickness of each amorphous thin film layer is required to be consistent. This results in a dense and uniform high-temperature induced color-changing coating on the surface of the heat-resistant substrate. The high-temperature induced color-changing material prepared in this way, upon high-temperature annealing, alters the crystal structure and electromagnetic properties of the amorphous thin film, thereby changing its refractive index. The difference between the refractive indices of the amorphous thin film and the heat-resistant substrate creates an optical path difference, resulting in various colors. By chemically bonding several layers of inert amorphous thin film to the surface of the heat-resistant substrate, the corrosion resistance and wear resistance of the substrate are also enhanced, exhibiting excellent service life. It maintains stable color and color-changing effects even under extreme environments such as highly corrosive systems and strong ultraviolet irradiation, thus making it widely applicable for high-temperature detection in extremely harsh environments. When applied to metal surfaces, this high-temperature induced color-changing material improves their corrosion resistance, seawater erosion resistance, and oxidation resistance, and also imparts anti-counterfeiting properties. When applied to non-metallic surfaces, it improves their temperature resistance and anti-counterfeiting properties. Furthermore, by selecting the substrate and coating materials and controlling experimental conditions, different colored coatings can be obtained on different material surfaces during the preparation process. In particular, the high-temperature induced color-changing material prepared using the method provided by this invention exhibits excellent long-term applicability, corrosion resistance, and strong ultraviolet resistance, providing a new method for temperature monitoring under long-term high-temperature environments.

[0080] The above embodiments are only used to illustrate the technical solutions of the present invention and are not intended to limit it. Although the present invention has been described in detail with reference to preferred embodiments, those skilled in the art should understand that modifications or equivalent substitutions can be made to the technical solutions of the present invention without departing from the spirit and scope of the technical solutions of the present invention.

Claims

1. A method for preparing a high-temperature induced color-changing material, characterized in that, Includes the following steps: S1. Surface activation is performed on the pre-cleaned heat-resistant substrate to obtain a pre-treated heat-resistant substrate; S2. An amorphous thin film of a predetermined thickness is chemically bonded to the pretreated heat-resistant substrate described in step S1 using a predetermined method to obtain a high-temperature induced color-changing material. The heat-resistant substrate is a p-type silicon wafer, the amorphous thin film is TiO2, the amorphous thin film is prepared by a modified spin-on atomic layer deposition method, and the difference in refractive index between the amorphous thin film and the heat-resistant substrate is 1.

036. Each layer of the amorphous thin film is uniformly adhered to the surface of the pretreated heat-resistant substrate. The thickness of the amorphous thin film on the high-temperature induced color-changing material is 50 nm.

2. The method for preparing the high-temperature induced color-changing material according to claim 1, characterized in that: In step S1, the cleaning process is as follows: first, sanding with sandpaper, then washing in a solution, and finally drying; the solution includes one or more of water, ethanol, acetone, ethyl acetate, laundry detergent, dish soap, soap, and acid, alkali, and salt solutions; the washing method includes one or more of soaking, rubbing, ultrasonic washing, stirring washing, and rinsing; the surface activation method includes one of plasma treatment, high-energy ray treatment, supercritical fluid treatment, metal ion complexation, grafting, and etching.

3. The method for preparing the high-temperature induced color-changing material according to claim 1, characterized in that: The surface structure and roughness of the amorphous film are consistent with those of the pretreated heat-resistant substrate.

4. The application of the high-temperature induced color-changing material prepared by any one of the preparation methods according to claims 1 to 3, characterized in that: After being heat-treated at 400–1500°C, the high-temperature induced color-changing material displays different colors at different temperatures, and can be applied to high-temperature detection in extremely harsh environments.

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