A processing control system for glass sputter layers and method thereof

Abstract

The application discloses a kind of processing control system of glass sputtering layer and method thereof, wherein system has mounting bracket, support component, movable push piece, mounting bracket is provided with mounting table below, sputtering cathode is installed on mounting table, support component has bottom support, top support, sputtering hole is opened in bottom support, installation through slot is opened in department support, to be coated workpiece is installed in installation through slot, at least part of to be coated workpiece is opposite sputtering hole, sputtering cathode is bombarded, metal atom on it is deposited on to be coated workpiece through sputtering hole to realize coating, movable push piece is used to push top support to move, to drive to be coated workpiece blocked part to be close to sputtering hole inner deposition area movement.This application, movable push piece promotes top support to move, to drive to be coated workpiece blocked part to be close to sputtering hole inner deposition area movement, realize to be coated workpiece blocked area / supporting site to be coated, realize the overall coating of to be coated workpiece.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of glass coating, in particular to a glass sputtering layer processing control system and method thereof. BACKGROUND

[0002] In the vacuum coating, the magnetron sputtering coating method uses the electrons emitted by the anode to collide with the gas molecules in the vacuum chamber under the acceleration of the electric field, so as to ionize the gas molecules, and the ionized gas molecules bombard the metal particles on the cathode under the action of the electric field, so as to ionize and sputter the metal particles, and the ionized metal ions are deposited on the surface of the target to form a thin film. In order to make the electrons more efficiently collide with the gas molecules, thereby improving the ionization rate of the gas molecules, a magnet is installed in the cathode to form a magnetron cathode. Under the joint action of the electric field and the magnetic field, the electrons will form a spiral trajectory in the vacuum chamber to increase the collision probability of the electrons and the gas molecules.

[0003] The existing coating mechanism usually coats the workpiece through a support groove seat. In order to support the workpiece, at least a part of the edge of the workpiece is supported on the support groove seat, which is away from the coating area. Therefore, the edge of the workpiece cannot be coated during the coating process, and the coating of the workpiece cannot be fully coated. This coating method is not suitable for glass workpieces that need to be fully coated.

[0004] Therefore, the existing technology has the following technical problems: the edge support area of the workpiece cannot be coated at the same time as other parts of the workpiece, which prevents the workpiece from being fully coated. SUMMARY

[0005] Therefore, the present application provides a glass sputtering layer processing control system and method, which effectively solves the problem of fully coating the workpiece and the inability to coat the edge support area of the workpiece in the prior art.

[0006] To solve the above technical problems, the present application specifically provides the following technical solutions: a glass sputtering layer processing control system and method, which has:

[0007] A mounting frame is provided below the mounting table, and a sputtering cathode is installed on the mounting table. The sputtering cathode is directly opposite the upper surface and below the mounting frame.

[0008] A support assembly is installed on the mounting frame, and the support assembly is provided with a bottom support, a sputtering hole is formed in the bottom support, a top support is arranged on the bottom support, an installation through slot is formed in the top support, and a workpiece to be plated is installed in the installation through slot; the installation through slot is consistent in size with the workpiece to be plated; at least part of the workpiece to be plated faces the sputtering hole; the sputtering cathode is bombarded, and metal atoms on the sputtering cathode are deposited on the workpiece to be plated through the sputtering hole to realize plating;

[0009] A movable pushing piece is arranged on the top support, and the movable pushing piece is used for pushing the top support to move, so that the blocked part of the workpiece to be plated moves close to the deposition area in the sputtering hole.

[0010] The movable pushing piece is electrically connected with a control module, the control module is pre-set with a time threshold value, and the control module sends a control signal to the movable pushing piece every time threshold value.

[0011] Further, the width of the workpiece to be plated is greater than the width of the sputtering hole, and the length of the workpiece to be plated is not greater than the length of the sputtering hole.

[0012] An inclined edge is arranged on the inner wall upper edge of the sputtering hole.

[0013] Further, the movable pushing piece comprises a movable shaft rod connected to the side edge of the top support, a driving groove seat arranged on the side edge of the top support, and an electromagnetic coil arranged in the driving groove seat.

[0014] A power supply is electrically connected to the electromagnetic coil, a magnetic block is arranged at the end of the movable shaft rod, the magnetic block is slidably arranged in the driving groove seat, and the movable shaft rod and the magnetic block are arranged in the moving direction of the workpiece to be plated.

[0015] Further, the sputtering hole is composed of an upper circular hole and a lower hole, and the upper circular hole is arranged above the lower hole.

[0016] The lower hole and the workpiece to be plated are consistent in shape and size, the center positions of the upper circular hole and the lower hole are overlapped, the corner positions of the lower hole are arranged on the edge line of the upper circular hole, and the thickness of the workpiece to be plated is greater than the thickness of the upper circular hole.

[0017] Further, a support block is arranged on the inner wall of the lower hole, the support block supports the bottom of the workpiece to be plated, and the support block is arranged in four and arranged on different edge portions of the lower hole.

[0018] The position corresponding to the bottom of the edge of the workpiece to be plated corresponds to the position of the adjacent support block on the bottom of the edge of the workpiece to be plated after rotating 90°, and there is no overlapping part, the height of the support block is consistent with the height of the lower hole, and an inclined edge is arranged on the upper edge of the side surface of the support block.

[0019] Further, the sputtering hole is circular, and the sputtering hole is consistent with the shape and size of the workpiece to be plated.

[0020] Further, the inner wall of the sputtering hole is provided with a support block, the support block supports the bottom of the workpiece to be plated, the support block is provided with four support blocks, and the four support blocks are arranged at equal intervals on the inner wall of the sputtering hole.

[0021] The height of the support block is the same as the height of the sputtering hole, and an inclined edge is arranged on the upper edge of the side edge of the support block.

[0022] Further, the inner wall of the mounting slot is provided with a friction inner wall, and the friction inner wall abuts against the outer wall of the workpiece to be plated.

[0023] The top support is circular.

[0024] Further, the movable pushing piece comprises a driving groove seat arranged outside the top support, an arc groove arranged in the driving groove seat, a driving groove symmetrically arranged in the arc groove, and an electromagnetic coil arranged in the driving groove.

[0025] The electromagnetic coil is electrically connected with a power supply, a magnetic block is movably arranged in the arc groove, the magnetic block is connected with a movable shaft rod, and the movable shaft rod is in an arc shape.

[0026] The central angle corresponding to the track of the magnetic block is greater than the central angle corresponding to the support block.

[0027] To solve the above technical problems, the present application further provides the following technical scheme: a processing method of a glass sputtering layer processing control system, comprising the following steps:

[0028] Step 100, placing the workpiece to be plated in the mounting slot;

[0029] Step 200, sputtering the cathode under bombardment, and the metal atoms on the sputtering cathode are deposited on the workpiece to be plated through the sputtering hole, so as to form a first sputtering layer on the workpiece to be plated opposite the sputtering hole area;

[0030] Step 300, the control module passes through a time threshold, and sends a control signal to the movable pushing piece;

[0031] Step 400, the activity pushes the top support to move the part of the workpiece to be plated to be close to the deposition area in the sputtering hole, and the part of the workpiece to be plated is moved to the second sputtering layer formed by the sputtering hole.

[0032] Step 500, repeat step 300 and step 400, repeat multiple times, and form a final sputtering layer on the workpiece to be plated.

[0033] Compared with the prior art, the present application has the following beneficial effects:

[0034] In the present application, the support assembly has a bottom support and a top support, the workpiece to be plated is installed in the top support, the bottom support and the related results can support the workpiece to be plated, the top support is pushed by the activity to move the part of the workpiece to be plated to be close to the deposition area in the sputtering hole, and the part of the workpiece to be plated is moved to the second sputtering layer formed by the sputtering hole. BRIEF DESCRIPTION OF DRAWINGS

[0035] In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the following will briefly introduce the drawings needed to be used in the embodiments or prior art description. Obviously, the drawings in the following description are only exemplary, and for those skilled in the art, other drawings can be obtained without creative labor on the basis of the provided drawings.

[0036] Figure 1 A structure diagram of a glass sputtering layer processing control system provided by the embodiment of the present application;

[0037] Figure 2 A structure diagram of the support assembly of the first embodiment;

[0038] Figure 3 A structure diagram of the workpiece to be plated in the first embodiment is circular;

[0039] Figure 4 A structure diagram of the workpiece to be plated in the first embodiment is square;

[0040] Figure 5 A Figure 2 Enlarged structure diagram of A in the middle;

[0041] Figure 6 A structure diagram of the support assembly of the second embodiment;

[0042] Figure 7 A Figure 7 Enlarged structure diagram of B in the middle;

[0043] Figure 8Fig. 2 is a schematic view of the internal structure of the sputtering hole of the second embodiment;

[0044] Figure 9 Fig. 3 is a schematic view of the structure of the movable pushing piece in the second embodiment;

[0045] Figure 10 Fig. 4 is a schematic view of the structure of the magnetic block rotating 90° in Fig. 3; Figure 10

[0046] Figure 11 Fig. 5 is a schematic view of the structure of the support assembly of the third embodiment;

[0047] Figure 12 Fig. 6 is a schematic view of the structure of the C in Fig. 5; Figure 12

[0048] Figure 13 Fig. 7 is a schematic view of the internal structure of the sputtering hole of the third embodiment;

[0049] Figure 14 Fig. 8 is a schematic view of the structure of the movable pushing piece in the third embodiment;

[0050] Figure 15 Fig. 9 is a schematic view of the structure of the magnetic block rotating about 45° in Fig. 8. Figure 14

[0051] The reference numerals in the figures represent the following respectively:

[0052] 1 - mounting frame; 2 - support assembly; 3 - movable pushing piece; 4 - mounting table; 5 - sputtering cathode; 6 - workpiece to be plated;

[0053] 21 - bottom support; 22 - sputtering hole; 23 - top support; 24 - mounting through slot; 25 - inclined edge; 26 - supporting block; 27 - friction inner wall;

[0054] 31 - movable shaft; 32 - driving slot base; 33 - electromagnetic coil; 34 - magnetic block; 35 - arc slot; 36 - driving slot;

[0055] 221 - upper circular hole; 222 - lower hole. DETAILED DESCRIPTION

[0056] The technical solutions in the embodiments of the present application will be described clearly and completely below with reference to the drawings in the embodiments of the present application. Obviously, the described embodiments are only some of the embodiments of the present application, but not all the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative work fall within the scope of protection of the present application.

[0057] As Figure 1 ​​​As shown, the present application provides a glass sputtering layer processing control system, which is provided with a mounting frame 1, a support assembly 2 and a movable pushing piece 3.

[0058] The mounting frame 1 is provided below with a mounting table 4, and the sputtering cathode 5 is installed on the mounting table 4, and the sputtering cathode 5 is opposite to the upper side and below the mounting frame 1.

[0059] The support assembly 2 is installed on the mounting frame 1, and the support assembly 2 is provided with a bottom support 21, and the bottom support 21 is provided with a sputtering hole 22, and the bottom support 21 is provided with a top support 23, and the top support 23 is provided with an installation through slot 24, and the installation through slot 24 is installed with the to-be-coated workpiece 6, and the installation through slot 24 is consistent with the size of the to-be-coated workpiece 6, and at least part of the to-be-coated workpiece 6 is opposite to the sputtering hole 22, and the metal atoms on the sputtering cathode 5 are bombarded, and the metal atoms are deposited on the to-be-coated workpiece 6 through the sputtering hole 22 to realize coating.

[0060] The movable pushing piece 3 is arranged on the top support 23, and the movable pushing piece 3 is used for driving the top support 23 to move, so as to drive the to-be-coated workpiece 6 to move close to the deposition area in the sputtering hole 22.

[0061] The movable pushing piece 3 is electrically connected with a control module, and the control module is pre-set with a time threshold value, and the control module sends a control signal to the movable pushing piece 3 every time the time threshold value is passed.

[0062] In the present application, the support assembly 2 is provided with the bottom support 21 and the top support 23, the to-be-coated workpiece 6 is installed in the top support, the bottom support and the related results can support the to-be-coated workpiece, the movable pushing piece drives the top support to move, so as to drive the to-be-coated workpiece to move close to the deposition area in the sputtering hole, realize the to-be-coated workpiece to be coated in the shielding area / supporting part, and realize the overall coating of the to-be-coated workpiece.

[0063] Three embodiments are disclosed in the present application, the first embodiment is suitable for any shape of to-be-coated workpiece 6, the second embodiment is suitable for square to-be-coated workpiece 6, and the third embodiment is suitable for circular to-be-coated workpiece 6.

[0064] The first embodiment is as follows, Figure 2 , Figure 3 and Figure 4 As shown, the width of the to-be-coated workpiece 6 is greater than the width of the sputtering hole 22, and the length of the to-be-coated workpiece 6 is not greater than the length of the sputtering hole 22.

[0065] The to-be-coated workpiece 6 moves in the width direction, and part of the to-be-coated workpiece 6 in the length direction is always in the deposition area range of the sputtering hole 22 during the movement, and the movement in the width direction can drive the to-be-coated workpiece 6 to move to the deposition area range of the sputtering hole 22, and the to-be-coated workpiece 6 is coated.

[0066] In order to make the first sputtering layer which is completed plating not to be blocked by the sputtering hole 22 in the activity process, as shown in the figure, the inner wall of the sputtering hole 22 is provided with an inclined edge 25, and the first sputtering layer side edge gradually moves upward along the inclined edge 25, and drives the workpiece 6 to be plated to gradually move upward in the mounting slot 24. Figure 5

[0067] Correspondingly, as shown in the figure and the figure, the activity push piece 3 drives the workpiece 6 to be plated to move along the width direction, the activity push piece 3 includes an activity shaft 31 connected to the side edge of the top support 23, a drive slot 32 provided on the side edge of the top support 23, and an electromagnetic coil 33 provided in the drive slot 32. The electromagnetic coil 33 is electrically connected with a power supply, the end of the activity shaft 31 is provided with a magnetic block 34, the magnetic block 34 is slidably provided in the drive slot 32, and the activity shaft 31 and the magnetic block 34 are arranged along the moving direction of the workpiece 6 to be plated. Figure 3 Figure 4 The power supply connection line is opened, the electromagnetic coil 33 is electrified, a magnetic field is generated, a magnetic force is generated on the magnetic block 34, the magnetic block 34 moves to the side close to the electromagnetic coil 33, the activity shaft 31 drives the top support 23 to move along the width direction of the workpiece 6 to be plated, thereby driving the workpiece 6 to be plated to move, so as to move the blocked part of the workpiece 6 to be plated to the deposition area of the sputtering hole 22.

[0068] The power supply connection line is opened, the electromagnetic coil 33 is electrified, a magnetic field is generated, a magnetic force is generated on the magnetic block 34, the magnetic block 34 moves to the side close to the electromagnetic coil 33, the activity shaft 31 drives the top support 23 to move along the width direction of the workpiece 6 to be plated, thereby driving the workpiece 6 to be plated to move, so as to move the blocked part of the workpiece 6 to be plated to the deposition area of the sputtering hole 22.

[0069] The second embodiment is mainly suitable for square workpiece 6 to be plated, and the second embodiment is as follows, as shown in the figure and the figure, Figure 6 Figure 8 The sputtering hole 22 is composed of an upper circular hole 221 and a lower hole 222, and the upper circular hole 221 is arranged above the lower hole 222.

[0070] Among them, the lower hole 222 and the workpiece 6 to be plated are consistent in shape and size, the center positions of the upper circular hole 221 and the lower hole 222 overlap, the corner positions of the lower hole 222 are arranged opposite to the edge lines of the upper circular hole 221, and the thickness of the workpiece 6 to be plated is greater than the thickness of the upper circular hole 221.

[0071] The workpiece 6 to be plated is opposite to the lower hole 222, and the metal atoms generated on the sputtering cathode 5 form in the lower hole 222. The first embodiment lists that the workpiece 6 to be plated can be linearly moved to realize the plating of the blocked part, and the second embodiment lists that the workpiece 6 to be plated is circularly moved to realize the plating of the blocked part. In order to avoid the workpiece 6 to be plated from being stopped when it is circularly moved, the upper circular hole 221 is arranged in a circular shape to facilitate the rotation of the workpiece 6 to be plated.

[0072] ​​​The bottom of the workpiece 6 to be plated is flush with the bottom of the upper circular hole 221. In order to drive the rotation of the workpiece 6 to be plated, the thickness of the workpiece 6 to be plated is greater than the thickness of the upper circular hole 221, and the upper end of the workpiece 6 to be plated extends out of the upper circular hole 221, so as to drive the rotation of the workpiece 6 to be plated.

[0073] In order to make the bottom of the workpiece 6 to be plated flush with the bottom of the upper circular hole 221, as shown in FIG. Figure 6 A support block 26 is arranged on the inner wall of the lower hole 222, and the support block 26 supports the bottom of the workpiece 6 to be plated. The support block 26 is arranged in four, and is arranged on different edge portions of the lower hole 222 respectively. The support block 26 is used to support the bottom of the workpiece 6 to be plated.

[0074] The position of the support block 26 corresponding to the bottom of one edge portion of the workpiece 6 to be plated does not overlap with the position of the adjacent support block 26 corresponding to the bottom of the edge portion of the workpiece 6 to be plated after rotating 90°. The height of the support block 26 is consistent with the height of the lower hole 222. As shown in FIG. Figure 7 The upper edge of the side surface of the support block 26 is provided with an inclined edge 25.

[0075] As shown in FIG. Figure 9 and Figure 10 In order to rotate the shielding part to be exposed to the lower hole 222, the workpiece 6 to be plated is usually rotated by 90°. After rotating 90°, the edge portion of the workpiece 6 to be plated is still opposite to the edge portion of the lower hole 222 (the above case is mainly for the case that the workpiece 6 to be plated is a square). Assuming that the upper edge portion of the workpiece 6 to be plated is close to the left edge, after counterclockwise rotation by 90°, the upper edge portion is rotated to the left edge portion, and the corresponding support position of the support block 26 in the lower hole 222 is close to the upper edge. In the initial state, the shielding position close to the left edge is close to the lower edge after rotating 90°. Therefore, the initially shielded area is away from the support position after rotation, and the shielding position is exposed to the lower hole 222 for plating.

[0076] For the case that the workpiece 6 to be plated is a rectangle, it needs to be rotated by 180° to align the corresponding edge portion with the lower hole 222. The position of the corresponding support block 26 also needs to meet that there is no overlapping part between the shielding position of the support block 26 and the support block 26 supporting the corresponding edge portion after rotating 180°.

[0077] The inclined edge 25 is arranged along the upper edge of the side surface of the support block 26, so as to facilitate the first sputtering layer not to be stopped by the support block 26 during the rotation of the workpiece 6 to be plated.

[0078] The third embodiment is suitable for the case that the workpiece 6 to be plated is a circle, as shown in FIG. Figure 11 and 13As shown in the figure, the sputtering hole 22 is circular, and the sputtering hole 22 is consistent with the shape and size of the workpiece 6 to be plated.

[0079] Correspondingly, as shown in the figures, Figure 11 , Figure 12 and Figure 13 , the inner wall of the sputtering hole 22 is provided with a support block 26, the support block 26 is supported at the bottom of the workpiece 6 to be plated, the support block 26 is provided with four, and is equidistantly arranged on the inner wall of the sputtering hole 22, the height of the support block 26 is the same as the height of the sputtering hole 22, and the upper edge of the side edge of the support block 26 is provided with an inclined edge 25.

[0080] Among them, the inclined edge 25 is arranged along the upper edge of the support block 26 in order to facilitate the first sputtering layer not to be stopped by the support block 26 in the process of rotating the workpiece 6 to be plated.

[0081] The support block 26 is equidistantly arranged on the inner wall of the sputtering hole 22, that is, every 90° rotation, the blocked part of the workpiece 6 to be plated is blocked by the adjacent support block 26, therefore, the corresponding rotation angle needs to be controlled within 90°, so that after rotating a certain angle, the workpiece 6 to be plated will not be blocked by the support block 26.

[0082] Since the workpiece 6 to be plated is circular, in order to drive the workpiece 6 to be plated to rotate in the process of rotating the top support 23, it is necessary to make the workpiece 6 to be plated and the top support 23 have a large static friction, for this purpose, a friction inner wall 27 is arranged on the inner wall of the installation through slot 24, the friction inner wall 27 abuts against the outer wall of the workpiece 6 to be plated, the top support 23 is circular, and under the driving of the friction inner wall 27, the top support 23 rotates and can drive the workpiece 6 to be plated to rotate.

[0083] The second and third embodiments are both to drive the workpiece 6 to be plated to rotate, therefore, the corresponding movable push piece 3 adopts the following embodiment, as shown in the figures, Figure 9 and Figure 14 , the movable push piece 3 comprises a driving groove seat 32 arranged outside the top support 23, an arc groove 35 arranged in the driving groove seat 32, a driving groove 36 symmetrically arranged in the arc groove 35, and an electromagnetic coil 33 arranged in the driving groove 36; the electromagnetic coil 33 is electrically connected with a power supply, a magnetic block 34 is movably arranged in the arc groove 35, the magnetic block 34 is connected with a movable shaft 31, and the movable shaft 31 is arc-shaped.

[0084] Open the corresponding power supply connection line, the electromagnetic coil 33 is electrified, a magnetic field is generated in the electromagnetic coil 33, and under the action of the magnetic force, the magnetic block 34 gradually moves along the arc groove 35 to the position of the electromagnetic coil 33.

[0085] In the second embodiment, the rotation angle of the magnetic block 34 is 90°, so that the edge of the workpiece 6 to be plated can still be aligned with the edge of the lower hole 222 after rotation.

[0086] In the third embodiment, the active track of the magnetic block 34 corresponds to a circle with a central angle larger than the central angle corresponding to the supporting block 26, that is, as shown in the figure, when the magnetic block 34 moves about 45°, the electromagnetic coil 33 is powered off, so that the entire movement angle of the magnetic block 34 is smaller than the central angle corresponding to the supporting block 26, so that when the workpiece 6 to be plated follows the rotation of about 45°, the part initially blocked by the supporting block 26 is exposed between the supporting blocks 26, and the plating can be performed. Figure 15

[0087] In the present application, the size of the inclined edge 25 is determined according to the plating thickness, and when the plating thickness is constant, the height corresponding to the inclined edge 25 should be larger than the plating thickness, so that the workpiece 6 to be plated directly moves on the inclined edge 25 during the movement of the edge of the first sputtering layer.

[0088] The present application also provides a processing method of a glass sputtering layer processing control system, comprising the following steps:

[0089] Step 100, placing the workpiece 6 to be plated in the installation slot 24;

[0090] Step 200, sputtering the cathode 5 under bombardment, and the metal atoms on it are deposited on the workpiece 6 to be plated through the sputtering hole 22, so as to form a first sputtering layer on the workpiece 6 to be plated opposite the sputtering hole 22 area;

[0091] Step 300, the control module passes through the time threshold, and sends a control signal to the movable push piece 3;

[0092] Step 400, the movable push piece 3 pushes the top support 23 to move, so as to drive the blocked part of the workpiece 6 to be plated to move close to the deposition area in the sputtering hole 22, and move the blocked part of the workpiece 6 to be plated to be opposite the sputtering hole 22 to form a second sputtering layer;

[0093] Step 500, repeating steps 300 and 400 repeatedly to form a final sputtering layer on the workpiece 6 to be plated.

[0094] The above embodiments are only exemplary embodiments of the present application and are not used to limit the present application, and the protection scope of the present application is defined by the claims. Those skilled in the art can make various modifications or equivalent replacements to the present application within the spirit and protection scope of the present application, and such modifications or equivalent replacements shall also be considered to fall within the protection scope of the present application.​

Claims

1. A system for process control of a glass sputter layer, characterized by, Possess: Mounting frame (1), which is provided with a mounting table (4) below, a sputtering cathode (5) is installed on the mounting table (4), the sputtering cathode (5) is opposite to the upper side and below the mounting frame (1); Support assembly (2) is installed on the mounting frame (1), the support assembly (2) has a bottom support (21), the bottom support (21) is provided with a sputtering hole (22), the bottom support (21) is provided with a top support (23), the top support (23) is provided with an installation through slot (24), the installation through slot (24) is installed with a workpiece to be plated (6), the installation through slot (24) is consistent with the size of the workpiece to be plated (6), at least part of the workpiece to be plated (6) is opposite to the sputtering hole (22), the sputtering cathode (5) is bombarded, the metal atoms on it are deposited on the workpiece to be plated (6) through the sputtering hole (22) to realize plating; Movable push piece (3) is arranged on the top support (23), the movable push piece (3) is used for pushing the top support (23) to move, so as to drive the workpiece to be plated (6) to be blocked to move close to the deposition area in the sputtering hole (22); The movable push piece (3) is electrically connected with a control module, the control module is pre-set with a time threshold value, and the control module sends a control signal to the movable push piece (3) every time threshold value.

2. The system for processing control of a glass sputter layer according to claim 1, wherein, The width of the workpiece to be plated (6) is greater than the width of the sputtering hole (22), and the length of the workpiece to be plated (6) is not greater than the length of the sputtering hole (22); The inner wall of the sputtering hole (22) is provided with an inclined edge (25).

3. The system for processing control of a glass sputter layer according to claim 2, wherein, The movable push piece (3) comprises a movable shaft (31) connected to the side of the top support (23), a driving groove seat (32) arranged on the side of the top support (23), and an electromagnetic coil (33) arranged in the driving groove seat (32); The electromagnetic coil (33) is electrically connected with a power supply, the end of the movable shaft (31) is provided with a magnetic block (34), the magnetic block (34) is slidably arranged in the driving groove seat (32), and the movable shaft (31) and the magnetic block (34) are arranged in the moving direction of the workpiece to be plated (6).

4. The system for processing control of a glass sputter layer according to claim 1, wherein, The sputtering hole (22) is composed of an upper circular hole (221) and a lower hole (222), and the upper circular hole (221) is arranged above the lower hole (222); The lower hole (222) and the workpiece to be plated (6) are consistent in shape and size, the center positions of the upper circular hole (221) and the lower hole (222) overlap, the corner positions of the lower hole (222) are opposite to the edge lines of the upper circular hole (221), and the thickness of the workpiece to be plated (6) is greater than the thickness of the upper circular hole (221).

5. The system for processing control of a glass sputter layer according to claim 4, wherein, The inner wall of the lower hole (222) is provided with a support block (26), the support block (26) supports the bottom of the workpiece to be plated (6), and the support block (26) is provided with four support blocks (26) arranged on different edge portions of the lower hole (222). The position corresponding to the bottom of the side of the workpiece (6) to be plated on the support block (26) is not overlapped with the position corresponding to the bottom of the side of the adjacent support block (26) after rotating 90 degrees, the height of the support block (26) is consistent with the height of the lower hole (222), and the upper edge of the side of the support block (26) is provided with an inclined edge (25).

6. The system for processing control of a glass sputter layer according to claim 1, wherein, The sputtering hole (22) is circular, and the sputtering hole (22) is consistent with the shape and size of the workpiece (6) to be plated.

7. The system for processing control of a glass sputter layer according to claim 6, wherein, The inner wall of the sputtering hole (22) is provided with a support block (26), the support block (26) supports the bottom of the workpiece (6) to be plated, the support block (26) is provided with four and is equally spaced on the inner wall of the sputtering hole (22). The height of the support block (26) is the same as the height of the sputtering hole (22), and the upper edge of the side of the support block (26) is provided with an inclined edge (25).

8. A system for controlling processing of a glass sputter layer according to claim 5 or 7, wherein The inner wall of the mounting slot (24) is provided with a friction inner wall (27), and the friction inner wall (27) abuts against the outer wall of the workpiece (6) to be plated. The top support (23) is circular.

9. The system for processing control of a glass sputter layer according to claim 8, wherein, The movable push piece (3) comprises a driving groove seat (32) arranged outside the top support (23), an arc groove (35) arranged in the driving groove seat (32), a driving groove (36) symmetrically arranged in the arc groove (35), and an electromagnetic coil (33) arranged in the driving groove (36). The electromagnetic coil (33) is electrically connected with a power supply, the arc groove (35) is movably provided with a magnetic block (34), the magnetic block (34) is connected with a movable shaft (31), and the movable shaft (31) is arc-shaped. The central angle corresponding to the activity track of the magnetic block (34) is greater than the central angle corresponding to the support block (26).

10. A processing method of the glass sputter layer processing control system according to claim 1, characterized by, The method comprises the following steps: Step 100, placing the workpiece to be plated in the mounting slot; Step 200, sputtering the cathode under bombardment, and the metal atoms on the sputtering hole deposit on the workpiece to be plated to form a first sputtering layer on the workpiece to be plated; Step 300, the control module passes through the time threshold value, and sends a control signal to the movable push piece; Step 400, the movable push piece pushes the top support to move, so as to drive the workpiece to be plated to move close to the deposition area in the sputtering hole, and the workpiece to be plated is moved to the sputtering hole to form a second sputtering layer; Step 500, repeat steps 300 and 400, repeat multiple times, and form a final sputtering layer on the workpiece to be plated.

Images