A Minilized Surface Light Source Structure and Its Fabrication Process

Abstract

This invention relates to the field of Miniled surface light source structure technology, and in particular to a Miniled surface light source structure and its processing technology; it includes a liquid crystal screen, a diffuser, light-emitting units, a substrate, and a heat dissipation base plate; the diffuser is fixedly installed below the liquid crystal screen, multiple light-emitting units are fixedly installed below the diffuser, the substrate is fixedly installed below the light-emitting units, and the heat dissipation base plate is fixedly installed below the substrate; this invention increases the light-emitting area and optical consistency through a light guide layer and a reflective layer, and solves the halo phenomenon by blocking the light propagation within adjacent light-emitting areas through a grating; through the above methods, the gap between the backlight and the liquid crystal glass can be significantly reduced, the product thickness can be reduced, and the halo range can be reduced, resulting in higher dynamic contrast within a small area.

Description

Technical Field

[0001] This invention relates to the field of Miniled surface light source structure technology, and in particular to a Miniled surface light source structure and its fabrication process. Background Technology

[0002] LCD screens are widely used in all aspects of our work and life. With rising demands for electronic product performance and increased consumer spending power, the high-end display market is gaining popularity. As a result, OLED has developed rapidly in recent years, finding applications in mobile phones, tablets, and laptops. Its self-emissive nature makes it brighter, offers higher contrast, and is thinner than LCD panels. Although its lifespan is less than half that of LCD and its cost is several times higher, prolonged display of the same image can lead to rapid pixel aging and burn-in issues, it remains highly sought after. Considering these market demands and existing OLED technical challenges, finding a new technological solution that can address the high cost, short lifespan, and burn-in issues, while also avoiding patent restrictions imposed by foreign manufacturers, and achieving or exceeding the technical specifications of OLED, has become urgent. Miniled emerged in this context.

[0003] Miniled LEDs are LEDs with small individual light-emitting units and fine spacing. Their chip size is between 75-300 micrometers, falling between traditional LEDs and Microled LEDs. They can be considered a refined version of small-pitch LEDs. This means that more dimming areas can be achieved within the same area, thus enabling precise light control and resulting in ultra-high contrast and ultra-high brightness. However, existing miniled LEDs have relatively low luminous intensity, requiring a large number of miniled chips to ensure brightness. Furthermore, there is no reasonable structural combination to address the drawbacks of individual light-emitting units, such as diffuse reflection, unfocused light paths, and diffused halos.

[0004] Due to the limitations of its light-emitting principle, the central area of ​​a minied chip is a low-light zone. This results in a significant difference in brightness between the central part and the surrounding area within each individual light-emitting unit at a local microscopic viewing angle. One existing solution is to use algorithms in new dimming technologies to eliminate this discrepancy; however, this only ensures that the brightness of the LCD screen does not change noticeably after dimming. In reality, due to the small pitch of minied chips, the human eye can hardly distinguish this difference in light perception. This dimming effect at the center and brighter at the edges causes a halo effect and increases the thickness of the LCD screen, resulting in lower dynamic contrast in small areas. The impact is most significant on the display effect of curved screens and high-resolution LCD screens. Existing technologies often use even smaller pitches to eliminate this effect, but they do not effectively address this problem by addressing the internal structure of the minied surface light source.

[0005] In view of the above, in order to overcome the above technical problems, the present invention designs a minimized surface light source structure and its processing technology, thus solving the above technical problems. Summary of the Invention

[0006] The technical problem to be solved by the present invention is that the existing Miniled surface light source structure has a weak light area in the middle of each independent light-emitting unit due to its light-emitting principle, which produces a halo phenomenon, resulting in increased product thickness and inability to guarantee dynamic contrast in a small range.

[0007] To achieve the above objectives, the present invention provides the following technical solution:

[0008] This invention provides a minimized surface light source structure, including a liquid crystal display (LCD), a diffuser, light-emitting units, a substrate, and a heat dissipation base plate. The diffuser is fixedly mounted below the LCD, and multiple light-emitting units are fixedly mounted below the diffuser. Each light-emitting unit has its internal light-emitting element's light path concentrated by a reflective coating printed on it. Screen printing refers to using a screen as a printing plate and creating a textured screen printing plate through a photosensitive plate-making method. By setting a reflective coating, the original light path of the light-emitting elements is altered, causing them to reflect into the central low-light area, thus ensuring uniform and equal light emission from each light-emitting unit. The light-emitting units are arranged in a gapless linear array along the x and y axes. This design facilitates circuit etching on the substrate, reduces manufacturing costs, meets the requirements of most LCDs, and increases the versatility of the structure. The substrate is fixedly mounted below each light-emitting unit, and the heat dissipation base plate is fixedly mounted below the substrate. Circuits are etched onto the substrate using SMT technology to power and connect the multiple light-emitting units. During this process, a large amount of heat is generated, and the heat dissipation base plate uses flowing liquid to carry away the heat for rapid cooling.

[0009] Miniled displays utilize small-sized light-emitting diodes (LEDs) as backlights. Current flowing through a semiconductor material induces the recombination of electrons and holes, generating photons and emitting light. Unlike the large-sized cold cathode fluorescent lamps or LED backlights used in traditional LCD displays, Miniled displays have a smaller size and higher brightness control, thus providing higher display quality and better contrast. The light-emitting unit includes a chip, a lampshade, a grating, a bracket, a light guide layer, and a reflective layer. The chip is fixedly mounted on the substrate, the lampshade is fixedly mounted above the chip, and the grating is fixedly mounted around the chip. The bracket is provided at the boundary. The bracket is trapezoidal in shape, with a top-to-bottom area ratio of 2:3. This ratio allows the bracket to effectively provide support, ensuring the stability of the entire LCD screen during use and handling. The reflective layer is fixedly installed on the lampshade, and a light guide layer is fixedly installed above the grating. The thickness of the light guide layer is set to 30-60μm. A thickness less than 30μm will result in poor light guiding effect, failing to adequately change the light path and causing uneven light emission. A thickness greater than 60μm will reduce brightness, requiring a longer distance for light to be emitted, thus affecting the light emission brightness.

[0010] The light emission of the light-emitting unit mainly relies on the chip to emit light under the power supply of the substrate. The chip is mounted on the substrate using SMT (Surface Mount Technology). SMT technology refers to a series of processes performed on a PCB (Printed Circuit Board) and is one of the most popular surface mount technologies. It is a circuit assembly technology that mounts leadless or short-lead surface mount components on the surface of a printed circuit board or other substrates and then assembles them through processes such as flow soldering or dip soldering. Using SMT technology to mount the chip helps to improve the stability of its light emission, reduce the failure rate, and save human resource costs.

[0011] The chip's emission angle is set to 0-120°. Setting the emission angle within 120° is chosen because existing minimized chips typically have emission angles within 150°, and also because a 120° setting allows for better concentration of the light path, ensuring uniform light emission and supplementary lighting in weaker areas. The chip size is set to 10-200μm. A chip size smaller than 10μm requires a larger number of chips per unit emission area, doubling the cost. Furthermore, the high cost per chip and demanding etching requirements on the substrate do not substantially improve the display effect, making it largely meaningless. Setting the size range to be greater than 200μm will result in a larger spacing, leading to the same problem as existing LCDs or OLEDs: the inability to achieve better display quality and contrast through smaller size and higher brightness control, thus losing the original technological advantages of Miniled. Setting the distance between each pair of adjacent chips to 0.2-0.7mm will cause the light emission from the two adjacent chips to converge if the distance is less than 0.2mm, reducing the contrast of the LCD screen. Setting the distance to be greater than 0.7mm will result in insufficient light intensity in the gap between them, resulting in lower brightness on the LCD screen, thus losing one of its original advantages.

[0012] The chip plays a crucial role in Miniled display technology; it is the core component of the light-emitting unit, responsible for achieving the light-emitting function. The chip includes a substrate, a gallium nitride (GaN) n-layer, a gallium nitride (GaN) p-layer, a transparent metal electrode, a P-type electrode, and an N-type electrode. The substrate is fixed to the base plate, and the GaN n-layer is fixedly mounted on the substrate, with the GaN n-layer secured near one corner of the base plate. The GaN p-layer is fixedly mounted on the GaN n-layer, with the area of ​​the GaN p-layer set to 85% of that of the GaN n-layer. This proportion ensures normal light-emitting operation and guarantees sufficient mechanical strength. To improve the light emission intensity of the chip, a transparent metal electrode is fixedly mounted on the gallium nitride p-layer, with a thickness of 0.4-0.6 times that of the gallium nitride p-layer. A thickness less than 0.4 times will result in lower light emission brightness, which is not conducive to improving the light emission intensity of the chip. A thickness greater than 0.6 times will increase manufacturing costs and affect the light transmission during the light emission process. The p-electrode is fixedly mounted at the diagonal intersection of the transparent metal electrode, and the n-electrode is fixedly mounted on the substrate at the middle position on the side of the gallium nitride n-layer. The p-electrode and the n-electrode need to be mounted on different sides, which meets the requirements of the chip's light emission principle.

[0013] The lampshade protects the chip during use and assists the chip in emitting light uniformly. The lampshade is elliptical in shape; an elliptical structure provides stability and avoids obvious focal points, ensuring uniform light emission from the chip. The maximum diameter of the lampshade is 1.2-1.4 times the length of the chip. A diameter less than 1.2 times the chip length would result in an excessively short distance between the lampshade and the chip, which would be detrimental to chip protection and might even affect the chip's light emission performance. The reflective layer is silkscreened onto the lampshade, and its thickness is 20-40 μm. A thickness less than 2 μm is also acceptable. At 0μm, the reflective effect is poor, and it cannot achieve the purpose of changing and concentrating the light path. When the thickness of the reflective layer is set to be greater than 40μm, it will result in more reflection, which will cause extensive damage to the original light path, resulting in a change of weak light areas around the edges. When the coverage area of ​​the reflective layer is set to 50%-75% of the lampshade, if the area is less than 50%, the reflective effect is not obvious enough, and the coverage area is insufficient, which will lead to local reflection, making the emitted light not only uneven, but also with a large difference in brightness. When the area is set to be greater than 75%, the entire lampshade is covered by the reflective layer, which will cause the original light path to be destroyed, resulting in reduced brightness around the edges, turning it into a weak light area.

[0014] The reflective layer is divided into multiple regions facing different angles of the light path, and each region undergoes different processing. This ensures that the brightness around the edges does not change abruptly while supplementing the central portion, thus maintaining uniform overall brightness. This ensures that the chip's luminous brightness is relatively uniform, without obvious areas of strong or weak light, and also facilitates the adaptation to various dimming technologies later. The reflective layer includes a direct-lighting region, an oblique-lighting region, a transition region, and a diffraction region. The direct-lighting region is located in the middle of the reflective layer, at the intersection of the central axis of the chip's light path and the side line of the lamp cover. This allows the direct-lighting region to concentrate the weaker light in the central part of the chip when it emits light, thereby enhancing the brightness of the central part. The oblique-lighting region, transition region, and diffraction region are arranged in a circular array around the direct-lighting region. The number of oblique-lighting regions is set to 5-7. Setting the number of reflective zones to less than 5 will result in poor reflection and an inability to provide adequate illumination for the central low-light area. Setting the number of oblique reflective zones to more than 7 will cause excessive light to be reflected into the central area, resulting in a low-light area on the outer side. The ratio of the oblique reflective zones, transition zones, and diffraction zones is set to 4:5:7. This ratio is mainly determined by their area to achieve a more even illumination effect. Under this ratio, the oblique reflective zones, transition zones, and diffraction zones can provide illumination for the low-light area in the central region of the chip. The area ratio of the oblique reflective zones, transition zones, and diffraction zones is set to 7:5:2. This area ratio corresponds to the chip's light-emitting principle: the central area is the low-light area, and the area around it decreases accordingly. Setting the reflective layer area ratio to 7:5:2 ensures a uniform light-emitting effect.

[0015] The grating corrects the light path in the oblique direction, achieving a focusing effect and thus enhancing the luminous intensity of each light-emitting unit, thereby better adapting to dimming technology. The grating is set to 150-200 lines. If the grating is set to less than 150 lines, there are too few gratings per unit luminous area, which cannot guarantee the luminous intensity and concentration. If the grating is set to more than 200 lines, the luminous intensity can be guaranteed, but the grating is too dense, which is not conducive to increasing contrast in post-dimming, resulting in high brightness but insufficient contrast on the LCD screen. The depth of field coefficient is set to 1.2-1.8. The depth of field coefficient is a parameter used in optics to control the depth of field effect. Depth of field refers to the focal range in an image, that is, the area that is clearly presented in photography and the blurring effect of the foreground and background. Setting it to less than 1.2 will result in poor reflection effect, making it impossible to change the path of the oblique light to achieve the effect of concentrated light emission. Setting the light concentration greater than 1.8 results in strong light concentration but also a loss of contrast, which is detrimental to the display performance of the LCD screen. Setting the height of the grating to 1.2-1.3 times the height of the lampshade results in a thinner light guide layer if the setting is less than 1.2 times, failing to achieve a good light path guidance effect. Setting it greater than 1.3 times increases the overall thickness, which is not suitable for the thin screens currently popular in the market, resulting in a loss of portability and adaptability. Setting the thickness to 5-10 μm results in poor light collection if the thickness is less than 5 μm, causing some light to spill into adjacent light-emitting units, leading to severe diffraction. A thickness greater than 10 μm reduces the effective display area of ​​the light-emitting unit, which is unsuitable for applications requiring high contrast and high definition.

[0016] The substrate includes a base, mounting grooves, an anode, a conductive layer, an emitting layer, a cathode, and connecting circuitry. The base is fixedly mounted on the heat dissipation base plate. Multiple mounting grooves are provided on the base, with a depth of 3-5 mm. A depth less than 3 mm would result in unstable installation and increase the possibility of loosening during transportation. A depth greater than 5 mm would necessitate a corresponding increase in overall thickness, making the substrate thicker and unsuitable for current market demands. The anode linear array is fixedly mounted on the base, the conductive layer is fixedly mounted on the anode, the emitting layer is fixedly mounted on the conductive layer, and the cathode linear array is fixedly mounted on the emitting layer. The ratio of the distance between the anode and cathode to their width is 1:7. This ratio improves the working efficiency and ensures the power transfer efficiency during operation. Their installation directions differ by 90° to increase the speed at which current flows from the cathode to the anode, ensuring power supply efficiency. The connection circuit is etched above the cathode using PVD dry etching. PVD dry etching is a commonly used thin film deposition technology that deposits a thin film on the surface of an object through physical means. PVD technology has certain advantages, such as film uniformity: PVD technology can produce uniform and dense films, giving them consistent performance and appearance across the entire surface. This is beneficial for forming a high-quality, consistent thin film coating of the connection circuit above the cathode.

[0017] During the emission process, the light-emitting unit generates a significant amount of heat. Its energy conversion efficiency is generally only 20-35%, with the remaining energy primarily converted into heat. This high heat output leads to a high temperature for the LCD screen, which reduces the lifespan and performance of the internal liquid crystal elements due to prolonged operation at high temperatures. Therefore, timely cooling and heat dissipation are necessary to ensure its lifespan. The heat dissipation base plate includes mounting protrusions, a thermally conductive layer, a fixing plate, and flow channels. The mounting protrusions are fixedly installed below the substrate and are trapezoidal in shape with side angles of 60°-75°. Side angles less than 60° result in poor clamping and negatively impact the stability of the heat dissipation base plate during installation. Side angles greater than 75° increase the processing difficulty of the mounting protrusions and may pose a breakage hazard due to changes in torque angle. The fixing plate is fixedly installed below the mounting protrusions, and the thermally conductive layer is located on the fixing plate near the mounting protrusions. The flow channels are formed below the thermally conductive layer.

[0018] The heat-conducting layer is made of aluminum, which has good thermal conductivity and is lightweight, meeting the requirements of the heat-conducting layer. The heat-conducting layer is finned, a design that facilitates heat transfer and exchange. The spacing between the fins is set to 0.3-0.5 mm. A spacing less than 0.3 mm results in poor heat dissipation and increased processing difficulty and costs, while a spacing greater than 0.5 mm reduces the contact area with the flow channel, decreasing the utilization rate of the flow channel's heat dissipation function. The flow channel is designed in a rotary shape, which increases the contact area and enhances heat dissipation. The channel diameter is set to 3-4mm. If the channel diameter is less than 3mm, the water flow rate is small, resulting in poor heat dissipation. If the channel diameter is greater than 4mm, the water flow rate is increased, but the thickness of the heat-conducting layer is required, making it impossible to achieve a thin substrate and compromising adaptability and portability. The spacing is set to 12-15mm. If the spacing is less than 12mm, it is too dense, requiring more sophisticated processing at the bends of the channels and potentially increasing the possibility of leakage. If the spacing is greater than 15mm, the contact area decreases, reducing heat dissipation efficiency and hindering rapid heat dissipation of the light-emitting unit.

[0019] The fabrication process of the Minilized surface light source structure includes the following steps:

[0020] S1: Prepare a sapphire substrate, ensuring its surface is flat and clean, and perform a chemical vapor deposition (CVD) process to grow gallium arsenide (GaAs) material on the substrate in the form of an epitaxial layer. Then, perform photolithography on the epitaxial layer, first coating the epitaxial layer with photoresist.

[0021] S2: Use chemical etching or physical etching methods to remove unwanted epitaxial layer materials, retain the required structure and pattern, and clean and purify the substrate to ensure the purity of the preparation process;

[0022] S3: Fabricate the connection circuit and install the chip in a specific area of ​​the substrate. Use physical or chemical deposition methods to fabricate the connection circuit 47 on the substrate. This may include using techniques such as PVD dry etching, surface mount technology (SMT) on the substrate, and mounting the chip in the appropriate position.

[0023] S4: Install the lampshade on the chip, ensuring a firm connection between the lampshade and the chip. Perform a reflective layer silkscreen printing on the lampshade to enhance the reflection effect. Determine the position of the grating and install it on the lampshade.

[0024] S5: Apply a uniform light-guiding layer to the surface of the grating using a spraying device to ensure that light can be effectively transmitted and diffused;

[0025] S6: Connect the substrate to the diffuser sheet and the liquid crystal screen to ensure a stable connection between them. Install a heat sink under the substrate to provide heat dissipation and protection. Test the completed liquid crystal screen to ensure that its performance and quality meet the specifications. This may include tests on brightness, color accuracy, contrast, etc.

[0026] The beneficial effects of this invention are as follows:

[0027] 1. This invention increases the light-emitting area and improves optical consistency by setting up a lampshade, a light guide layer, and a reflective layer. The grating blocks the propagation of light within adjacent light-emitting areas, solving the halo phenomenon. It reflects or intercepts the overflowing light path, achieving uniformity and evenness of light intensity within a single light-emitting unit. Through the above methods, the distance between the backlight and the liquid crystal glass can be significantly reduced, the product thickness can be reduced, and the halo range can be reduced, resulting in higher dynamic contrast within a small area.

[0028] 2. This invention solves the problem of uneven light emission in existing minimized surface light source structures, where the central area of ​​each chip is a weak light area due to the light emission principle. The reflective layer is specifically designed according to the light emission characteristics of the chip to reflect the stronger light from the surrounding area, thereby supplementing the weak light area in the center and achieving uniform light emission across the entire light emission unit. Based on different light paths at different angles, it includes a direct illumination area, an oblique illumination area, a transition area, and a diffraction area to ensure uniform light emission within each light emission unit.

[0029] 3. This invention uses a grating to reflect and retract overflowing light, ensuring the brightness of the light-emitting unit and the contrast of adjacent light-emitting units. By cooperating with the light guide layer, the path of the obliquely incident light is changed, redirecting it into its own light-emitting unit, thereby ensuring that the light does not escape outward, ensuring high brightness of each light-emitting unit, and also ensuring contrast after dimming.

[0030] 4. This invention, by setting a heat dissipation base plate, in which the heat-conducting plate and flow channels transfer the large amount of heat generated by the light-emitting unit due to light emission to the fixing plate through the fin structure, and then cools and dissipates the heat in a timely manner through the flow channels opened on the fixing plate; thereby ensuring that the operating temperature of the light-emitting unit and the precision optical components in the LCD screen is low, which is beneficial to extending the service life of the light-emitting unit and the LCD screen; by setting mounting protrusions and mounting grooves on the base, the installation is simplified and the stability during use or transportation is improved. Attached Figure Description

[0031] To more clearly illustrate the specific embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the specific embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are some embodiments of the present invention. For those skilled in the art, other drawings can be obtained from these drawings without creative effort.

[0032] The above and other aspects of the invention will now be described by way of example only, with reference to the accompanying drawings, in which:

[0033] Figure 1 This is a schematic diagram of the overall structure of the present invention;

[0034] Figure 2 This is a schematic diagram of the assembly of the light-emitting unit of the present invention;

[0035] Figure 3 This is a schematic diagram of the position of the light-emitting single cross-section of the present invention;

[0036] Figure 4 This is a schematic diagram of the AA cross-section of the present invention;

[0037] Figure 5 This is a schematic diagram of the chip structure of the present invention;

[0038] Figure 6 This is a schematic diagram of the reflective layer of the present invention;

[0039] Figure 7 This is a schematic diagram of the substrate structure of the present invention;

[0040] Figure 8 This is a schematic diagram of the heat dissipation base plate structure of the present invention;

[0041] Figure 9 This is a cross-sectional view of the present invention (BB).

[0042] Figure 10 This is a schematic diagram illustrating the working principle of the reflective layer of this invention;

[0043] Figure 11 This is a schematic diagram illustrating the working principle of the lampshade of the present invention;

[0044] Figure 12 This is a schematic diagram illustrating the working principle of the light guide layer and grating of the present invention;

[0045] Figure 13 This is a process flow diagram of the present invention.

[0046] In the diagram: 1. LCD screen; 2. Diffuser sheet; 3. Light-emitting unit; 31. Chip; 311. Substrate; 312. Gallium nitride n-layer; 313. Gallium nitride p-layer; 314. Transparent metal electrode; 315. P-electrode; 316. N-electrode; 32. Lampshade; 33. Grating; 34. Support; 35. Light guide layer; 36. Reflective layer; 361. Direct illumination area; 362. Oblique illumination area; 363. Transition area; 364. Diffraction area; 4. Substrate; 41. Base; 42. Mounting groove; 43. Anode; 44. Conductive layer; 45. Emitting layer; 46. Cathode; 47. Connecting circuit; 5. Heat dissipation base plate; 51. Mounting bump; 52. Thermally conductive layer; 53. Fixing plate; 54. Flow channel. Detailed Implementation

[0047] To better understand the above technical solutions, the following will provide a detailed explanation of the technical solutions in conjunction with the accompanying drawings and specific implementation methods.

[0048] like Figure 1 As shown, the present invention provides a minimized surface light source structure, including a liquid crystal screen 1, a diffuser 2, light-emitting units 3, a substrate 4, and a heat dissipation base plate 5; the diffuser 2 is fixedly installed below the liquid crystal screen 1, and a plurality of light-emitting units 3 are fixedly installed below the diffuser 2. The light-emitting units 3 are arranged in a gapless linear array along the x-axis and y-axis. The light-emitting units 3 are screen-printed with a special structure to change and concentrate the light path of the light-emitting element. The light path of the light-emitting element diffuses to the surrounding area of ​​the light-emitting unit 3 after multiple refractions, while reflecting back the overflowing light; the substrate 4 is fixedly installed below the light-emitting units 3, and the heat dissipation base plate 5 is fixedly installed below the substrate 4.

[0049] The diffuser 2 is fixedly installed below the LCD screen 1, and multiple light-emitting units 3 are fixedly installed below the diffuser 2. The light-emitting units 3 concentrate the light path of the internal light-emitting elements by screen printing a reflective coating. Screen printing refers to using a screen as a base and making a textured screen printing plate through a photosensitive plate-making method. By setting a reflective coating, the light path of the original light-emitting elements is changed so that it reflects into the weak light area in the middle, thereby ensuring that the light emission of each light-emitting unit 3 is uniform and equal. The light-emitting units 3 are arranged in a gapless linear array along the x-axis and y-axis. This design facilitates circuit etching on the substrate 4, reduces manufacturing costs, and meets the usage requirements of most LCD screens 1, increasing the versatility of this structure. The substrate 4 is fixedly installed below the light-emitting units 3, and the heat dissipation base plate 5 is fixedly installed below the substrate 4. Circuits are etched on the substrate 4 using SMT technology to realize the power supply and electrical connection of multiple light-emitting units 3. During this process, a large amount of heat is generated. The heat dissipation base plate 5 removes heat through flowing liquid to achieve rapid cooling.

[0050] The spacing between miniled LEDs generally increases with product size. Existing miniled structures on the market are limited by factors such as chip size, algorithm, and cost, allowing for mass production of partitioned LEDs. In practical applications, the minimum spacing between adjacent LEDs in a miniled structure must be more than four times the size of the chip size. The chip size ranges from 10-200μm, and in actual applications, the size of two adjacent chips is often between 2mm and 7mm, depending on the product size. To improve backlight uniformity, the optimal distance between the LCD screen and the backlight is generally increased. Increasing the distance means increasing the product thickness, and if local dimming is used, the light spot will also be larger.

[0051] like Figure 2 , Figure 3 and Figure 4 As shown, the light-emitting principle of Miniled is to use a small-sized light-emitting diode as a backlight. Light is emitted by the recombination of electrons and holes caused by current passing through the semiconductor material, generating photons. Compared with the large-sized cold cathode fluorescent lamps or LED backlights used in traditional LCD display technology, Miniled has a smaller size and higher brightness control capability, thus providing higher display quality and better contrast. The light-emitting unit 3 includes a chip 31, a lampshade 32, a grating 33, a bracket 34, a light guide layer 35, and a reflective layer 36. The chip 31 is fixedly mounted on the upper end of the substrate 4, the lampshade 32 is fixedly mounted above the substrate 4, the grating 33 is fixedly mounted around the chip 31, and the bracket 34 is fixedly mounted at the junction of the grating 33. The bracket 34 is trapezoidal in shape, and the area ratio of the upper and lower end faces of the bracket 34 is 2:3. The reflective layer 36 is fixedly mounted on the outer surface of the lampshade 32, and the light guide layer 35 is fixedly mounted above the grating 33. The thickness of the light guide layer 35 is 30-60 μm.

[0052] The chip 31 is fixedly mounted on the substrate 4. The chip 31 emits light when powered on. A lampshade 32 is fixedly mounted above the chip 31. The lampshade 32 protects the chip 31 and softens the light emitted from it. A grating 33 is fixedly mounted around the chip 31. The grating 33 concentrates the light from each individual light-emitting unit 3 through reflection, ensuring the contrast of the LCD screen 1. A bracket 34 is provided at the junction of the grating 33. The bracket 34 provides support between the light-emitting unit 3 and the diffuser plate. The bracket 34 is trapezoidal in shape, with a vertical area ratio of 2:3. The bracket 34 described below can effectively provide support, thereby ensuring the stability of the entire LCD screen 1 during use and transportation. The reflective layer 36 is fixedly installed on the lampshade 32. The reflective layer 36 is used to reflect the light emitted by the chip 31, thereby ensuring that the light emission in a single light-emitting unit 3 is relatively uniform. A light guide layer 35 is fixedly installed above the grating 33. The light guide layer 35 is used to guide and process the light emitted by the chip 31 and then transmit it to the diffuser 2. The thickness of the light guide layer 35 is set to 50μm. The light guide effect of the light guide layer 35 is better, which can reasonably change the light path, promote uniform light emission, and not affect the brightness.

[0053] The light emission of the light-emitting unit 3 mainly relies on the chip 31 to emit light under the power supply of the substrate 4. The chip 31 is etched onto the substrate 4 using SMT technology. The light emission angle of the chip 31 is 0-120°, the size of the chip 31 ranges from 10-200μm, and the distance between adjacent chips 31 is 0.2-0.7mm. SMT technology refers to a series of processes performed on the PCB, and it is one of the most popular surface mount technologies. It is a circuit assembly technology that mounts leadless or short-lead surface mount components on the surface of a printed circuit board or other substrate 4, and then assembles them through processing methods such as flow soldering or dip soldering. Using SMT technology to mount the chip 31 helps to improve the stability of its light emission, reduce the failure rate, and save human resource costs.

[0054] like Figure 5The emission angle of chip 31 is set to 0-120°. Setting the emission angle of chip 31 to within 120° is due to two reasons: firstly, the emission angle of existing Miniled displays is generally within 150°; secondly, setting it to within 120° allows for better concentration of the light path, thus ensuring uniform emission and supplementary lighting in the weak light areas. The size of chip 31 is set to 50μm. When the chip size is set to 50μm, the number of chips 31 required per unit emission area is appropriate, and the cost is controlled while ensuring the emission effect. Better display quality and better contrast can be achieved through smaller size and higher brightness control, thus preserving the original technological advantages of Miniled displays. The distance between every two adjacent chips 31 is set to 0.4mm. This distance ensures that the emission light sources of two adjacent chips 31 do not converge, ensuring the contrast display of the LCD screen 1 and further ensuring the luminous intensity of the gap in the middle.

[0055] The manufacturing process is as follows: Step 1: Etch lines on the substrate 4.

[0056] Step 2: Mount the chip 31 onto the substrate 4 using SMT.

[0057] Step 3: Add the lampshade 32 onto the chip 31.

[0058] Step 4: After the light guide layer 35 is cured, the reflective layer 36 is arrayed with the LED light-emitting surface as the center.

[0059] Step 5: Divide the light-emitting units into equal parts according to the number of light-emitting areas, and set the grating 33 between adjacent areas.

[0060] Step 6: Fill the surface of the lamp panel composed of multiple light-emitting units with a light guide layer 35 of uniform thickness.

[0061] like Figure 5As shown, the chip 31 plays a crucial role in Miniled display technology. It is the core component of the light-emitting unit 3, used to realize the light-emitting function. The chip 31 includes a substrate 311, a gallium nitride n-layer 312, a gallium nitride p-layer 313, a metal transparent electrode 314, a P-electrode 315, and an N-electrode 316. The substrate 311 is fixedly mounted on the substrate 4, the gallium nitride n-layer 312 is fixedly mounted above the substrate 311, and the gallium nitride p-layer 313 is fixedly mounted on the upper end of the gallium nitride n-layer 312. The area of ​​the gallium p-layer 313 is set to s, and the area of ​​the gallium nitride n-layer 312 is set to S, where s is 85% of S. The metal transparent electrode 314 is fixedly mounted above the gallium nitride p-layer 313, and the thickness of the metal transparent electrode 314 is set to 0.4-0.6 times the thickness of the gallium nitride p-layer 313. The p-electrode 315 is fixedly mounted at the intersection of the diagonals of the metal transparent electrode 314, and the n-electrode 316 is fixedly mounted above the substrate 311, with the n-electrode 316 located to the side and middle of the gallium nitride n-layer 312.

[0062] The substrate 311 is fixed on the substrate 4. A gallium nitride (GaN) n-layer 312 is fixedly mounted on the substrate 311, with the GaN n-layer 312 secured near one corner of the substrate 4. A gallium nitride (GaN) p-layer 313 is fixedly mounted on the GaN n-layer 312, with the area of ​​the GaN p-layer 313 set to 85% of the area of ​​the GaN n-layer 312. This proportion ensures normal light emission and enhances mechanical strength. A transparent metal electrode 314 is fixedly mounted on the GaN p-layer 313, with a thickness equal to that of the GaN p-layer 312. The brightness is set to 0.5 times that of 3; a brightness of 0.5 times is relatively high, which is beneficial to improving the optical display effect of the chip 31. The P-electrode 315 is fixedly installed at the diagonal intersection of the metal transparent electrode 314, and the N-electrode 316 is fixedly installed above the substrate 311 at the middle position on the side of the gallium nitride n-layer 312. The P-electrode 315 and the N-electrode 316 need to be installed on different sides. This arrangement meets the light-emitting principle requirements of the chip 31, that is, the P-electrode 315 and the N-electrode 316 are set on opposite sides to ensure that the circuit paths have a certain distance.

[0063] During operation: When the substrate 4 applies the circuit to the chip 31, an electric field is formed between the anode 43 and the cathode 46. The electric field attracts electrons from the cathode 46 to the anode 43. When the electrons are accelerated by the electric field and enter the chip 31, they recombine with the positive holes (vacant electrons) formed by the gallium nitride n-layer 312 and the gallium nitride p-layer 313 in the chip 31. This process releases energy. The release of energy causes the gallium nitride n-layer 312 and the gallium nitride p-layer 313 in the chip 31 to be excited. Electrons transition from a high energy level to a low energy level. During this transition, energy is released in the form of light, producing a light emission phenomenon. The generated light is scattered from the surface of the transparent metal electrode.

[0064] like Figure 4 and Figure 5 As shown, the lampshade 32 is used to protect the chip 31 during use and to assist the chip 31 in emitting light uniformly to the outside. The lampshade 32 is elliptical in shape, with a diameter of L1 and a length of L2 for the chip 31. L1 is 1.2-1.4 times the length of L2. The reflective layer 36 is fixedly installed on the outer surface of the lampshade 32 using screen printing technology, and the thickness of the reflective layer 36 is 20-40 μm. The area of ​​the reflective layer 36 is set to 50%-75% of the area of ​​the lampshade 32.

[0065] The lampshade 32 is elliptical in shape. The elliptical structure provides stability and prevents the formation of obvious light-gathering points, ensuring uniform light emission from the chip 31. The maximum diameter of the lampshade 32 is set to 1.3 times the length of the chip 31. This 1.3-times diameter provides a suitable distance between the lampshade 32 and the chip 31, protecting the chip 31 without affecting its light emission. The reflective layer 36 is silkscreened onto the lampshade 32, and its thickness is 30μm. A 30μm thickness provides good reflectivity, effectively concentrating the light path without causing significant damage to the original path or creating weak light areas around the edges. The reflective layer 36 covers 60% of the lampshade 32. This 60% coverage provides a significant reflective effect and sufficient coverage, preventing localized reflections and ensuring uniform emitted light with minimal brightness differences.

[0066] like Figure 6 and Figure 10As shown, the reflective layer 36 is divided into multiple regions facing different angles of the light path, and each region undergoes different processing. This ensures that the brightness around the edges does not change abruptly while providing supplemental light to the central portion, thus maintaining a uniform overall brightness. This ensures that the luminous brightness of the chip 31 is relatively uniform, without obvious areas of strong or weak light, which is also beneficial for subsequent adaptation to various dimming technologies. The reflective layer 36 includes a direct illumination region 361, an oblique illumination region 362, a transition region 363, and a diffraction region 364. The direct illumination region 361 is located in... In the middle part of the reflective layer 36, the direct-light area 361 is located at the intersection of the optical path centerline of the chip 31 and the side line of the lamp cover 32. The oblique-light area 362, the transition area 363 and the diffraction area 364 are fixedly installed in a circular array around the direct-light area 361. The number of oblique-light areas 362 is set to 5-7. The ratio of the number of oblique-light areas 362, transition areas 363 and diffraction areas 364 is set to 4:5:7. The area ratio of oblique-light areas 362, transition areas 363 and diffraction areas 364 is set to 7:5:2.

[0067] The direct-light area 361 is located in the middle part of the reflective layer 36, at the intersection of the central axis of the optical path of the chip 31 and the side line of the lamp cover 32. This allows the direct-light area 361 to concentrate the weaker light in the middle part of the chip 31 when it emits light, thus enhancing the brightness of the middle part. The oblique-light area 362, transition area 363, and diffraction area 364 are arranged in a circular array around the direct-light area 361. The number of oblique-light areas 362 is set to six to ensure reflection and provide supplementary lighting to the central weak light area. This prevents excessive light from being reflected into the middle area, avoiding the outer areas becoming weak light areas. The oblique-light area 362... The ratio of the transition region 363 and the diffraction region 364 is set to 4:5:7. The ratio of the oblique illumination region 362, the transition region 363, and the diffraction region 364 is mainly determined by their area to achieve a more even supplementary lighting effect. Under this ratio, the oblique illumination region 362, the transition region 363, and the diffraction region 364 can provide supplementary lighting for the weak light area in the middle region of the chip 31. The area ratio of the oblique illumination region 362, the transition region 363, and the diffraction region 364 is set to 7:5:2. The area ratio corresponds to the light-emitting principle of the chip 31: the center is the weak light area, and the area around it decreases accordingly. The 7:5:2 area ratio of the reflective layer 36 ensures a uniform light-emitting effect.

[0068] like Figure 10 As shown, based on the material properties, some light passes through the silkscreen layer, while some light is reflected back to the light guide layer 35. The shape of the silkscreen layer is designed according to the area of ​​the light-emitting unit 3 and the package size of the minimized unit. Figure 4As shown, the reflective screen printing layer can reflect the light near the center point of the LED (strong light area) back to the light guide layer 35. After multiple refractions in the light guide layer 35, the light diffuses to the surrounding area of ​​the grid, thereby increasing the brightness of the area far from the center of the LED (weak light area) and thus achieving uniform brightness throughout the entire grid area.

[0069] The arrangement density of the grating 33 is 150-200 lines, the depth factor of the grating 33 is 1.2-1.8, the height of the grating 33 is 1.2-1.3 times the height of the lampshade 32, and the thickness of the grating 33 is 5-10μm.

[0070] like Figure 4 and Figure 12 As shown, the grating 33 corrects the light path in the oblique direction to achieve a focusing effect, thereby enhancing the light intensity of each light-emitting unit 3 and better adapting to dimming technology. The grating 33 is set to 180 lines, which is an appropriate number of gratings 33 per unit light-emitting area, thus ensuring both light intensity and concentration. This is beneficial for increasing contrast in post-dimming, ensuring high brightness and sufficient contrast on the LCD screen 1. The depth-of-field coefficient is set to 1.5. The depth-of-field coefficient is a parameter used in optics to control the depth-of-field effect. Depth of field refers to the focal range in an image, that is, the area clearly presented in photography and the blurring effect of the foreground and background. Setting it to 1.5 can ensure its reflection effect, thereby changing the path of the oblique light path and achieving a concentrated light emission effect. The height of the grating 33 is set to 1.25 times the height of the lampshade 32. This setting achieves a better light path guidance effect without increasing the overall thickness, which is beneficial for the thin screens that are currently popular in the market, improving the portability and adaptability of the device. Its thickness is set to 8μm, which provides a better light-gathering effect and prevents the emitted light from overflowing into the adjacent light-emitting units, thus controlling diffraction. The effective display area of ​​the light-emitting unit 3 is guaranteed, which is beneficial for use under high contrast and high definition requirements.

[0071] like Figure 7As shown, the substrate 4 includes a base 41, mounting grooves 42, anodes 43, conductive layers 44, emitting layers 45, cathodes 46, and connecting circuits 47. The base 41 is fixedly mounted on a heat dissipation base plate 5. Multiple mounting grooves 42 are formed on the upper part of the base 41, and the depth of the mounting grooves 42 is 3-5mm. The anodes 43 are linearly arrayed and fixedly mounted above the base 41. The conductive layers 44 are fixedly mounted above the anodes 43. The emitting layers 45 are fixedly mounted above the conductive layers 44. The cathodes 46 are linearly arrayed and fixedly mounted above the emitting layers 45. The ratio of the distance between adjacent anodes 43 to the width of anode 43 is 1:7. The cathodes 46 and anodes 43 correspond one-to-one. The directions of the anodes 43 and cathodes 46 differ by an angle of 90°. The connecting circuits 47 are etched onto the cathodes 46 using PVD dry etching.

[0072] The base 41 is fixedly mounted on the heat dissipation base plate 5. The base 41 has multiple mounting grooves 42 with a depth of 4mm. A depth of 4mm ensures stable installation and reduces the possibility of loosening during transportation. A depth greater than 5mm would necessitate a corresponding increase in overall thickness, making the base thicker and unsuitable for current market demands. The anode 43 is linearly arrayed and fixedly mounted on the base 41. The conductive layer 44 is fixedly mounted on the anode 43, the emitting layer 45 is fixedly mounted on the conductive layer 44, and the cathode 46 is linearly arrayed and fixedly mounted on the emitting layer 45. The spacing between the anode 43 and the cathode 46 is... Compared to their own width ratio of 1:7, the anode 43 and the cathode 46 at this ratio improve working efficiency and ensure power transmission efficiency during operation; their installation directions differ by 90°, thereby increasing the speed at which current flows from the cathode 46 to the anode 43, ensuring power supply efficiency; the connection circuit 47 is etched on the cathode 46 using PVD dry etching; PVD dry etching is a commonly used thin film deposition technology that deposits thin films on the surface of an object through physical means. PVD technology has certain advantages, such as film uniformity: PVD technology can produce uniform and dense films, giving them consistent performance and appearance across the entire surface, which is beneficial for forming a high-quality and consistent thin film coating of the connection circuit 47 on the cathode 46.

[0073] During operation: the base 41 is fixedly installed on the heat dissipation base plate 5 through the mounting groove 42. The anode 43 and cathode 46 are powered. The conductive layer 44 and the emitting layer 45 deliver a stable current into the connection circuit 47 to power the substrate 4.

[0074] During the light-emitting process, the light-emitting unit generates a significant amount of heat. Its energy conversion efficiency is generally only 20-35%, with the remaining energy primarily converted into heat. This high heat output leads to a high temperature for the LCD screen 1. Prolonged operation of the internal liquid crystal elements at high temperatures reduces their lifespan and performance. Therefore, timely cooling and heat dissipation are necessary to ensure its lifespan. The heat dissipation base plate 5 includes mounting protrusions 51, a thermally conductive layer 52, a fixing plate 53, and flow channels 54. The mounting protrusions 51 are fixedly mounted below the substrate 4, and are trapezoidal in shape with side angles of 60°-75°. The fixing plate 53 is fixedly mounted below the mounting protrusions 51. The thermally conductive layer 52 is located on the upper part of the fixing plate 53, and the flow channels 54 are located below the thermally conductive layer 52. The thermally conductive layer 52 is fin-shaped with a spacing of 0.3-0.5 mm. The flow channels 54 are rotary in shape with a diameter of 3-4 mm and a spacing of 12-15 mm.

[0075] The mounting protrusion 51 is fixedly installed below the substrate 4. The mounting protrusion 51 is trapezoidal with a side angle of 70°. When the side angle is set to 70°, the clamping effect is better, which helps to improve the installation and use stability of the heat dissipation base plate 5 and reduce the processing difficulty of the mounting protrusion 51. The torque at this angle can eliminate potential safety hazards. The fixing plate 53 is fixedly installed below the mounting protrusion 51. The heat-conducting layer 52 is provided on the fixing plate 53 near the mounting protrusion 51. The flow channel 54 is opened below the heat-conducting layer 52.

[0076] like Figure 8 and Figure 9 As shown, the heat-conducting layer 52 is made of aluminum, which has good thermal conductivity and is lightweight, meeting the requirements of the heat-conducting layer 52. The heat-conducting layer 52 is finned, which is beneficial for heat transfer and heat exchange. The spacing is set to 0.4mm, which ensures heat dissipation while reducing processing difficulty and cost, and ensures sufficient contact area with the flow channel 54, improving the utilization rate of the heat dissipation function of the flow channel 54. The flow channel 54 is rotary, which increases the contact area and enhances the heat dissipation effect. The diameter of the flow channel 54 is set to 3.5mm, which allows for a larger water flow rate, ensuring heat dissipation and enabling a thinner substrate 4, ensuring adaptability and portability. The spacing is set to 13mm, which provides a larger contact area and ensures heat dissipation efficiency, achieving rapid heat dissipation of the light-emitting unit 3.

[0077] like Figure 11 and Figure 12As shown, the lampshade 32 can also increase the light emission angle of the chip 31. After adding the lampshade 32, the light emission angle increases from A to C. The grating 33 can separate each of the light emission units 3, prevent light scattering, and improve the light spot effect. When light encounters the grating, it is absorbed or reflected, so a uniform light emission surface with the grating area as the smallest unit can be formed, while the brightness of adjacent gratings is not affected, thereby achieving a high contrast effect. The light guide layer 35 makes the light propagate more uniformly within the area of ​​the light emission unit 3, and at the same time increases the light emission angle. The light emission angle increases from A to B and from C to D.

[0078] like Figure 13 As shown, the fabrication process of the Miniled surface light source structure includes the following steps:

[0079] S1: Prepare sapphire substrate 4, ensuring its surface is flat and clean, and perform chemical vapor deposition (CVD) process on it to grow gallium arsenide material on substrate 4 in the form of an epitaxial layer. Perform photolithography on the epitaxial layer, first coating the epitaxial layer with photoresist.

[0080] S2: Use chemical etching or physical etching to remove unwanted epitaxial layer material, retain the required structure and pattern, and clean and purify substrate 4 to ensure the purity of the preparation process;

[0081] S3: Fabricate the connection circuit 47 and the chip 31 in a specific area of ​​the substrate 4. The connection circuit 47 is fabricated on the substrate 4 by physical or chemical deposition methods. This may include using techniques such as PVD dry etching, surface mount technology (SMT) on the substrate 4, and mounting the chip 31 in the appropriate position.

[0082] S4: Install the lampshade 32 on the chip 31 to ensure a firm connection between the lampshade and the chip. Perform a screen printing process on the lampshade 32 to enhance the reflection effect. Determine the position of the grating 33 and install it on the lampshade 32.

[0083] S5: Apply a uniform light guide layer 35 to the surface of the grating 33 using a spraying device to ensure that light can be effectively transmitted and diffused;

[0084] S6: Connect the substrate 4 to the diffuser sheet 2 and the liquid crystal screen 1 to ensure a stable connection between them. Install a heat dissipation base plate 5 under the substrate 4 to provide heat dissipation and protection. Test the completed liquid crystal screen 1 to ensure that its performance and quality meet the specifications. This may include tests on brightness, color accuracy, contrast, etc.

[0085] During operation, the substrate 41 is fixedly mounted on the heat dissipation base plate 5 via the mounting groove 42. The anode 43 and cathode 46 are powered, and a stable current is delivered into the connection circuit 47 through the conductive layer 44 and the emitting layer 45 to power the substrate 4. When the substrate 4 applies the circuit to the chip 31, an electric field is formed between the anode 43 and the cathode 46, which attracts electrons from the cathode 46 to the anode 43. When the electrons are accelerated by the electric field and enter the chip 31, they interact with the gallium nitride n-layer 312 and the nitride layer within the chip 31. The positive holes (vacant electrons) formed in the gallium p layer 313 recombine, releasing energy in the process. This energy release excites the gallium nitride n layer 312 and the gallium nitride p layer 313 in the chip 31, causing electrons to transition from a high energy level to a low energy level. During this transition, energy is released in the form of light, resulting in luminescence. The generated light is scattered from the surface of the transparent metal electrode. After passing through the lampshade 32, the reflective layer 36, and the light guide layer 35, the light is transmitted to the diffuser 2. During this process, the grating 33 and the reflective layer 36 can adjust and supplement the luminescence effect within the individual light-emitting unit 3, thereby avoiding halo problems.

[0086] Various modifications to this disclosure will be readily apparent to those skilled in the art, and the general principles defined herein can be applied to other variations without departing from the scope of this disclosure. Therefore, this disclosure is not limited to the examples and designs described herein.

Claims

1. A Miniled surface light source structure, characterized by, The application relates to a liquid crystal display screen, which comprises a diffusion sheet (2), a light-emitting unit (3), a substrate (4) and a heat dissipation bottom plate (5); the diffusion sheet (2) is fixedly installed below a liquid crystal screen (1), a plurality of the light-emitting units (3) are fixedly installed below the diffusion sheet (2), the light-emitting units (3) are arranged in a linear array without gaps along the x and y axes, the light-emitting units (3) are silk-screen printed with special structures for changing and concentrating the light path of light-emitting elements, and the light path of the light-emitting elements is diffused to the surroundings of the light-emitting units (3) after multiple refractions while reflecting and recovering the overflowed light. The substrate (4) is fixedly installed below the light-emitting unit (3), and the heat dissipation bottom plate (5) is fixedly installed below the substrate (4). The light-emitting unit (3) comprises a chip (31), a lampshade (32), a light grid (33), a support (34), a light guide layer (35) and a light reflection layer (36); the chip (31) is fixedly installed at the upper end of the substrate (4), the lampshade (32) is fixedly installed above the substrate (4), the light grid (33) is fixedly installed around the chip (31), the light grid (33) concentrates the light in a single light-emitting unit (3) through reflection, and the contrast of the liquid crystal screen is ensured; the support (34) is fixedly installed at the junction of the light grid (33), the support (34) is in the shape of a ladder, and the area ratio of the upper and lower end faces of the support (34) is 2:3; the light reflection layer (36) is fixedly installed on the outer surface of the lampshade (32), and the light guide layer (35) is fixedly installed above the light grid (33), and the thickness value of the light guide layer (35) is 30-60 mu m; The chip (31) is etched onto the substrate (4) by adopting the SMT technology, the light-emitting angle of the chip (31) is 0-120 degrees, the size range of the chip (31) is 10-200 mu m, and the distance between adjacent chips (31) is 0.2-0.7 mm; The lampshade (32) is in the shape of an ellipse, the diameter of the lampshade (32) is L1, the length of the chip (31) is L2, L1 is 1.2-1.4 times of L2; the light reflection layer (36) is fixedly installed on the outer surface of the lampshade (32) by adopting the silk-screen technology, the thickness value of the light reflection layer (36) is 20-40 mu m, and the area of the light reflection layer (36) is set to be 50%-75% of the area of the lampshade (32); The light reflection layer (36) comprises a direct radiation area (361), an oblique radiation area (362), a transition area (363) and a diffraction area (364), the direct radiation area (361) is arranged at the middle part of the light reflection layer (36), the direct radiation area (361) is located at the junction of the central axis of the light path of the chip (31) and the side line of the lampshade (32), the oblique radiation area (362), the transition area (363) and the diffraction area (364) are fixedly installed in a circumferential array around the direct radiation area (361).

2. The Miniled surface light source structure according to claim 1, characterized in that: The chip (31) comprises a substrate (311), a gallium nitride n layer (312), a gallium nitride p layer (313), a metal transparent electrode (314), a P pole (315) and an N pole (316); the substrate (311) is fixedly installed on the base plate (4), the gallium nitride n layer (312) is fixedly installed above the substrate (311), the gallium nitride p layer (313) is fixedly installed at the upper end of the gallium nitride n layer (312), the area of the gallium nitride p layer (313) is set as s, the area of the gallium nitride n layer (312) is set as S, and the value of s is set as 85% of S; the metal transparent electrode (314) is fixedly installed above the gallium nitride p layer (313), the thickness of the metal transparent electrode (314) is set as 0.4-0.6 times the thickness of the gallium nitride p layer (313), the P pole (315) is fixedly installed at the intersection of the diagonal lines of the metal transparent electrode (314), and the N pole (316) is fixedly installed above the substrate (311), and the position of the N pole (316) is located in the middle of the side of the gallium nitride n layer (312).

3. The Miniled surface light source structure according to claim 1, characterized in that: The number of the inclined radiation areas (362) is set as 5-7, and the number ratio of the inclined radiation areas (362), the transition areas (363) and the diffraction areas (364) is set as 4:5:7, and the area ratio of the inclined radiation areas (362), the transition areas (363) and the diffraction areas (364) is set as 7:5:

2.

4. The Miniled surface light source structure according to claim 1, characterized in that: The arrangement density of the grating grid (33) is 150-200 lines, the depth of field coefficient of the grating grid (33) is 1.2-1.8, the height of the grating grid (33) is 1.2-1.3 times the height of the lampshade (32), and the thickness value of the grating grid (33) is 5-10 mu m.

5. The Miniled surface light source structure according to claim 1, characterized in that: The base plate (4) comprises a bottom base (41), a mounting groove (42), an anode (43), a conductive layer (44), an emission layer (45), a cathode (46) and a connection circuit (47), the bottom base (41) is fixedly installed on the heat dissipation bottom plate (5), a plurality of mounting grooves (42) are arranged on the upper part of the bottom base (41), and the depth value of the mounting groove (42) is 3-5 mm; the anode (43) is fixedly installed in linear array above the bottom base (41), the conductive layer (44) is fixedly installed above the anode (43), the emission layer (45) is fixedly installed above the conductive layer (44), the cathode (46) is fixedly installed in linear array above the emission layer (45), the distance value between adjacent anodes (43) and the width value of the anode (43) are in a ratio of 1:7, and the cathode (46) and the anode (43) are in one-to-one correspondence; the directions of the anode (43) and the cathode (46) are different by an angle of 90°; and the connection circuit (47) is etched on the cathode (46) by PVD dry etching.

6. The Miniled surface light source structure according to claim 1, wherein: The heat dissipation bottom plate (5) comprises a mounting protrusion (51), a heat conduction layer (52), a fixing plate (53) and a flow channel (54), the mounting protrusion (51) is fixedly installed below the base plate (4), the shape of the mounting protrusion (51) is trapezoidal, and the side edge angle of the mounting protrusion (51) is 60°-75°; the fixing plate (53) is fixedly installed below the mounting protrusion (51), the heat conduction layer (52) is on the upper part of the fixing plate (53), and the flow channel (54) is arranged below the heat conduction layer (52); the shape of the heat conduction layer (52) is fin-shaped, and the spacing of the heat conduction layer (52) is 0.3-0.5 mm; the shape of the flow channel (54) is rotary, the diameter of the flow channel (54) is 3-4 mm, and the spacing of the flow channel (54) is 12-15 mm.

7. A process for processing a Miniled surface light source structure, which process uses the Miniled surface light source structure according to any one of claims 1 to 6, characterized in that: The Miniled surface light source structure processing process comprises the following steps: S1: prepare the sapphire substrate (4), ensure that the surface is flat and clean, and perform a chemical vapor deposition (CVD) process to grow gallium arsenide gallium material in the form of an epitaxial layer on the substrate (4), and perform a photolithography technology process on the epitaxial layer, first coating photoresist on the epitaxial layer; S2: using chemical etching or physical etching method, remove the unnecessary epitaxial layer material, retain the required structure and pattern, clean and purify the substrate (4) to ensure the purity of the preparation process; S3: prepare the connection circuit (47) and the chip (31) mounted on the substrate (4) in a specific area, use physical or chemical deposition method to prepare the connection circuit (47) on the substrate (4), and perform surface mount technology (SMT) on the substrate (4) to mount the chip (31) in place; S4: install the lampshade (32) on the chip (31), ensure the firm connection of the lampshade with the chip, perform silk screen reflective layer (36) processing on the lampshade (32) to enhance the reflection effect, determine the position of the light grid (33) and install it on the lampshade (32); S5: use a spraying device to coat a uniform light guide layer (35) on the surface of the light grid (33) to ensure effective transmission and diffusion of light; S6: connect the substrate (4) with the diffusion sheet (2) and the liquid crystal screen (1), ensure the firm connection between them, install the heat dissipation bottom plate (5) below the substrate (4) to provide heat dissipation and protection functions, and test the prepared liquid crystal screen (1) to ensure that its performance and quality meet the specification requirements.

Images