A high transmittance indium terbium tantalum titanium holmium target and a preparation method thereof

Abstract

The present application relates to the technical field of target production, and discloses a preparation method of an indium terbium tantalum titanium holmium target with high transmittance. The method is specifically as follows: preparing a target precursor by using indium oxide powder, terbium oxide powder, tantalum oxide powder, titanium oxide powder and holmium oxide powder with a mass ratio of 94.8-96.2:0.1-0.5:1.0-1.3:2.0-2.5:0.7-0.9, and then performing aerobic sintering. The indium oxide of the target is controlled below 96.5%. By doping with terbium, tantalum, titanium and holmium, the transmittance can be increased and the resistivity can be reduced. At the same time, the present invention also discloses the target.

Description

Technical Field

[0001] The present invention relates to the technical field of target production, and particularly relates to a high-transmittance indium terbium tantalum titanium holmium target and a preparation method thereof. Background Art

[0002] CN115893988A discloses a vapor deposition target for a solar cell and a preparation method thereof. The vapor deposition target comprises the following components in mass fractions: indium oxide (In 2 O 3 ) 98.5-99.5%, a doped oxide 0.5-1.5%, and the doped oxide is 2-4 kinds of cerium oxide, tungsten oxide, molybdenum oxide, holmium oxide, yttrium oxide, zirconium oxide, gallium oxide.

[0003] Its electron mobility reaches 120 cm 2 / V·S; the near-infrared transmittance reaches more than 98%;

[0004] However, it cannot be ignored that indium oxide is expensive. Reducing the amount of indium oxide and being able to achieve better levels of mobility and transmittance will undoubtedly bring great cost reduction advantages to production enterprises.

[0005] The problem to be solved by this solution: how to improve the resistivity and transmittance while reducing the amount of indium. Summary of the Invention

[0006] The purpose of this application is to provide a high-transmittance indium terbium tantalum titanium holmium target. The indium oxide of the target is controlled below 96.5%. Through the doping of terbium, tantalum, titanium, and holmium, the transmittance can be increased and the resistivity can be reduced.

[0007] Meanwhile, the present invention also discloses a preparation method of the target.

[0008] To achieve the above purpose, this application discloses a preparation method of a high-transmittance indium terbium tantalum titanium holmium target. The method is specifically as follows: preparing a target precursor from indium oxide powder, terbium oxide powder, tantalum oxide powder, titanium oxide powder, and holmium oxide powder with a mass ratio of 94.8-96.2:0.1-0.5:1.0-1.3:2.0-2.5:0.7-0.9, and then performing aerobic sintering.

[0009] In the above preparation method of the high-transmittance indium terbium tantalum titanium holmium target, the temperature of aerobic sintering is 1100-1500 °C, and the oxygen flow rate is 20-60 L / min.

[0010] In the above preparation method of the high-transmittance indium terbium tantalum titanium holmium target, the heat preservation time of aerobic sintering is 8-12 h, and the heating rate when heating to the sintering temperature is 0.1-0.5 °C / min.

[0011] In the preparation method of the above-mentioned indium terbium tantalum titanium holmium target with high transmittance, a degreasing operation is carried out before the aerobic sintering of the target precursor. The degreasing operation is carried out at a temperature of 400°C to 600°C for degreasing treatment, with a heat preservation time of 1 to 8 hours and a heating rate of 0.1 to 0.2°C / min;

[0012] The degreasing operation is carried out in an air or oxygen atmosphere.

[0013] In the preparation method of the above-mentioned indium terbium tantalum titanium holmium target with high transmittance, the preparation method of the target precursor is as follows:

[0014] Step 1: Add terbium oxide powder, tantalum oxide powder, titanium oxide powder and holmium oxide powder into an aqueous solution containing a first dispersant, disperse and then grind to obtain a first slurry;

[0015] Step 2: Add indium oxide powder and a second dispersant into the first slurry and grind to obtain a second slurry;

[0016] Step 3: Add a binder into the second slurry and grind to obtain a third slurry;

[0017] Step 4: Dry and powder the third slurry, and carry out die pressing and cold isostatic pressing to obtain a precursor.

[0018] In the preparation method of the above-mentioned indium terbium tantalum titanium holmium target with high transmittance, the first dispersant and the second dispersant are each independently selected from one or more of polyvinylpyrrolidone, sodium dodecylbenzenesulfonate, polycarboxylic acid-based compounds, polyvinyl salts or sodium hexadecylbenzenesulfonate; the first dispersant is equivalent to 0.1-5% of the total mass of terbium oxide powder, tantalum oxide powder, titanium oxide powder and holmium oxide powder; the second dispersant is equivalent to 0.1-5% of the total mass of indium oxide powder, terbium oxide powder, tantalum oxide powder, titanium oxide powder and holmium oxide powder; the binder accounts for 5-20% of the total mass of indium oxide powder, terbium oxide powder, tantalum oxide powder, titanium oxide powder, holmium oxide powder and the binder; the binder is one or two of a mixture of polyvinyl alcohol and polyethylene glycol, polyvinyl alcohol or polyvinyl butyral.

[0019] Finally, the present invention also discloses an indium terbium tantalum titanium holmium target prepared by any of the above methods.

[0020] The beneficial effects of this application are:

[0021] The present invention reduces the dosage of indium oxide by 3-5%. Through the doping of terbium, tantalum, titanium and holmium, the transmittance and mobility can be improved. The transmittance reaches more than 85%, and the resistivity reaches below 1.5 mΩ·cm. Detailed implementation mode

[0022] In the description of the present invention, it should be noted that for those not specified in the examples, they are carried out according to conventional conditions or the conditions recommended by the manufacturer. For reagents or instruments not specified in the manufacturer, they are all conventional products that can be obtained through commercial purchase.

[0023] The following will combine the embodiments of the present invention to clearly and completely describe the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, rather than all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative work belong to the scope of protection of the present invention.

[0024] Example 1

[0025] Step 1: Weigh 9.62 kg of indium oxide powder, 0.01 kg of terbium oxide powder, 0.1 kg of tantalum oxide powder, 0.2 kg of titanium oxide powder and 0.07 kg of holmium oxide powder for standby;

[0026] Step 2: Add 1.50 kg of pure water and polyvinylpyrrolidone dispersant to the slurry bucket. Among them, the polyvinylpyrrolidone dispersant accounts for 2% of the total mass of terbium oxide, tantalum oxide powder, titanium oxide powder and holmium oxide powder.

[0027] Step 3: Add the terbium oxide, tantalum oxide powder, titanium oxide powder and holmium oxide powder weighed in step (1) to the solution in step (2) for pre-dispersion to obtain slurry one. The pre-dispersion time is 30 min, the pre-dispersion speed is 100 rpm, and the solid content in the slurry is 60%.

[0028] Step 4: Add the slurry one obtained in step (3) to the sand mill cavity for grinding to obtain slurry two. The grinding speed is 1000 rpm, the grinding time is 6 h, and the D90 of the slurry two is 1.047 μm;

[0029] Step 5: Add the indium oxide powder weighed in step (1) and polyvinylpyrrolidone dispersant to the slurry two and stir for pre-dispersion to obtain slurry three. Among them, the mass of the polyvinylpyrrolidone dispersant accounts for 5% of the total mass of indium oxide, terbium oxide, tantalum oxide, titanium oxide powder and holmium oxide powder. The dispersion speed is 100 rpm, the dispersion time is 40 min, and the solid content in the slurry is 65%.

[0030] Step 6: Pump the slurry three obtained in step (5) into the sand mill with a pneumatic diaphragm pump for grinding to obtain slurry four. The grinding speed is 1200 rpm and the grinding time is 8 h;

[0031] Step 7: Add a binder to the slurry four obtained in step (6) for pre-dispersion. The pre-dispersion time is 30 min and the dispersion rotation speed is 100 rpm. The obtained slurry is pumped into a sand mill by a pneumatic diaphragm pump for grinding to obtain slurry five. Among them, the grinding time is 2 h, the grinding rotation speed is 1200 rpm, the binder accounts for 10% of the total mass of the added powder and binder, and the D90 of slurry five is 0.968 μm.

[0032] Step 8: Pump the slurry five obtained in step (7) into a co-current spray drying tower for spray granulation, then carry out mixing and screening to obtain the required precursor powder. Among them, the outlet air temperature is 68 °C and the atomizer frequency is 60 Hz.

[0033] Step 9: Press the powder prepared in step (8) by die pressing and cold isostatic pressing in sequence to obtain a green body of the target. Among them, the pressure during die pressing of the target is 90 Mpa and the pressure holding time is 120 s; the pressure during cold isostatic pressing is 350 Mpa and the pressure holding time is 120 s.

[0034] Step 10: Heat-treat the terbium indium tantalum titanium holmium oxide target blank obtained in step (9). The temperature is controlled at 550 °C for degreasing treatment (the heat preservation time is 2.5 hours and the heating rate is 0.15 °C / min), then cool to room temperature, introduce oxygen with a flow rate of 30 L / min, raise the sintering temperature for sintering to obtain a terbium indium tantalum titanium holmium oxide target (the sintering temperature is 1380 °C, the heating rate is 0.3 °C / min, and the heat preservation time is 10 h)

[0035] The relative density of the target is measured to be 98.91%, the resistivity of the target is 1.418 mΩ·cm, and the transmittance of the sputtered film of the target is 84.24%.

[0036] Example 2

[0037] Step 1: Weigh 9.48 kg of indium oxide powder, 0.05 kg of terbium oxide powder, 0.13 kg of tantalum oxide powder, 0.25 kg of titanium oxide powder, and 0.09 kg of holmium oxide powder for standby;

[0038] Step 2: Add 1.50 kg of pure water and polyvinylpyrrolidone dispersant to the slurry bucket. Among them, the polyvinylpyrrolidone dispersant accounts for 2% of the total mass of terbium oxide, tantalum oxide powder, titanium oxide powder, and holmium oxide powder.

[0039] Step 3: Add the terbium oxide, tantalum oxide powder, titanium oxide powder, and holmium oxide powder weighed in step (1) to the solution in step (2) for pre-dispersion to obtain slurry one. Among them, the pre-dispersion time is 30 min, the pre-dispersion rotation speed is 100 rpm, and the solid content in the slurry is 60%.

[0040] Step 4: Add the slurry one obtained in step (3) into the sand mill cavity for grinding to obtain slurry two. The grinding speed is 1000 rpm, the grinding time is 6 h, and the D90 of slurry two is 1.132 μm;

[0041] Step 5: Add the indium oxide powder weighed in step (1) and polyvinylpyrrolidone dispersant into slurry two and stir for pre-dispersion to obtain slurry three. Among them, the mass of polyvinylpyrrolidone dispersant accounts for 5% of the total mass of indium oxide, terbium oxide, tantalum oxide, titanium oxide powder and holmium oxide powder. The dispersion speed is 100 rpm, the dispersion time is 40 min, and the solid content in the slurry is 65%.

[0042] Step 6: Pump the slurry three obtained in step (5) into the sand mill for grinding to obtain slurry four. The grinding speed is 1200 rpm and the grinding time is 8 h;

[0043] Step 7: Add a binder to slurry four obtained in step (6) for pre-dispersion. The pre-dispersion time is 30 min and the dispersion speed is 100 rpm; the obtained slurry is pumped into the sand mill by a pneumatic diaphragm pump for grinding to obtain slurry five. Among them, the grinding time is 2 h and the grinding speed is 1200 rpm. The binder accounts for 10% of the total mass of the added powder and binder, and the D90 of slurry five is 0.945 μm.

[0044] Step 8: Pump the slurry five obtained in step (7) into a co-current spray drying tower for spray granulation, then carry out mixing and screening to obtain the required precursor powder. Among them, the outlet air temperature is 68 °C and the atomizer frequency is 60 Hz.

[0045] Step 9: Press the powder prepared in step (8) by die pressing and cold isostatic pressing to obtain a green body of the target. The pressure during die pressing of the target is 90 Mpa and the pressure holding time is 120 s; the pressure during cold isostatic pressing is 350 Mpa and the pressure holding time is 120 s.

[0046] Step 10: Heat-treat the indium terbium tantalum titanium holmium target blank obtained in step (9). The temperature is controlled at 550 °C for degreasing treatment (the holding time is 2.5 hours and the heating rate is 0.15 °C / min). Then, after cooling to room temperature, oxygen is introduced with a flow rate of 40 L / min, and the sintering temperature is increased for sintering to obtain an indium terbium tantalum titanium holmium target (the sintering temperature is 1380 °C, the heating rate is 0.3 °C / min, and the holding time is 10 h)

[0047] The relative density of the target is measured to be 99.12%, the resistivity of the target is 1.363 mΩ·cm, and the transmittance of the target sputtering film is 84.70%.

[0048] Example 3

[0049] Step 1: Weigh 95.4 kg of indium oxide powder, 0.03 kg of terbium oxide powder, 0.12 kg of tantalum oxide powder, 0.23 kg of titanium oxide powder and 0.08 kg of holmium oxide powder for standby;

[0050] Step 2: Add 1.50 kg of pure water and polyvinylpyrrolidone dispersant into the slurry tank. Among them, the polyvinylpyrrolidone dispersant accounts for 2% of the total mass of terbium oxide, tantalum oxide powder, titanium oxide powder and holmium oxide powder.

[0051] Step 3: Add the weighed terbium oxide, tantalum oxide powder, titanium oxide powder and holmium oxide powder in Step (1) into the solution in Step (2) for pre-dispersion to obtain Slurry 1. The pre-dispersion time is 30 min, the pre-dispersion speed is 100 rpm, and the solid content in the slurry is 60%.

[0052] Step 4: Add Slurry 1 obtained in Step (3) into the sand mill cavity for grinding to obtain Slurry 2. The grinding speed is 1000 rpm, the grinding time is 6 h, and the D90 of Slurry 2 is 1.089 μm;

[0053] Step 5: Add the weighed indium oxide powder and polyvinylpyrrolidone dispersant in Step (1) into Slurry 2 and stir for pre-dispersion to obtain Slurry 3. Among them, the mass of the polyvinylpyrrolidone dispersant accounts for 5% of the total mass of indium oxide, terbium oxide, tantalum oxide, titanium oxide powder and holmium oxide powder. The dispersion speed is 100 rpm, the dispersion time is 40 min, and the solid content in the slurry is 65%.

[0054] Step 6: Pump Slurry 3 obtained in Step (5) into the sand mill with a pneumatic diaphragm pump for grinding to obtain Slurry 4. The grinding speed is 1200 rpm and the grinding time is 8 h;

[0055] Step 7: Add a binder to Slurry 4 obtained in Step (6) for pre-dispersion. The pre-dispersion time is 30 min and the dispersion speed is 100 rpm; the obtained slurry is pumped into the sand mill with a pneumatic diaphragm pump for grinding to obtain Slurry 5. Among them, the grinding time is 2 h and the grinding speed is 1200 rpm. The binder accounts for 10% of the total mass of the added powder and the binder, and the D90 of Slurry 5 is 0.971 μm.

[0056] Step 8: Pump Slurry 5 obtained in Step (7) into a co-current spray drying tower for spray granulation, then mix and screen to obtain the required precursor powder. Among them, the outlet air temperature is 68 °C and the atomizer frequency is 60 Hz.

[0057] Step 9: The powder prepared in step (8) is subjected to die pressing and cold isostatic pressing in sequence to obtain a green body of the target. The pressure during die pressing of the target is 90 Mpa, and the pressure is maintained for 120 s; the pressure during cold isostatic pressing is 350 Mpa, and the pressure is maintained for 120 s.

[0058] Step 10: The terbium indium tantalum titanium holmium oxide target blank obtained in step (9) is heat-treated. The temperature is controlled at 550 °C for degreasing treatment (holding time 2.5 hours, heating rate 0.15 °C / min), and then cooled to room temperature. Then, oxygen is introduced with a flow rate of 50 L / min, and the sintering temperature is increased for sintering to obtain a terbium indium tantalum titanium holmium oxide target (sintering temperature is 1380 °C, heating rate is 0.3 °C / min, and holding time is 10 h).

[0059] The relative density of the target is measured to be 99.12%, the resistivity of the target is 1.212 mΩ·cm, and the transmittance of the sputtered film of the target is 85.24%.

[0060] Example 4

[0061] Step 1: Weigh 95.4 kg of indium oxide powder, 0.03 kg of terbium oxide powder, 0.12 kg of tantalum oxide powder, 0.23 kg of titanium oxide powder, and 0.08 kg of holmium oxide powder for standby.

[0062] Step 2: Add 1.50 kg of pure water and polyvinylpyrrolidone dispersant to the slurry tank. Among them, the polyvinylpyrrolidone dispersant accounts for 2% of the total mass of terbium oxide, tantalum oxide powder, titanium oxide powder, and holmium oxide powder.

[0063] Step 3: Add the terbium oxide, tantalum oxide powder, titanium oxide powder, and holmium oxide powder weighed in step (1) to the solution in step (2) for pre-dispersion to obtain slurry one. The pre-dispersion time is 30 min, the pre-dispersion rotation speed is 100 rpm, and the solid content in the slurry is 60%.

[0064] Step 4: Add the slurry one obtained in step (3) to the sand mill cavity for grinding to obtain slurry two. The grinding rotation speed is 1100 rpm, the grinding time is 7 h, and the D90 of slurry two is 0.863 μm.

[0065] Step 5: Add the indium oxide powder weighed in step (1) and polyvinylpyrrolidone dispersant to slurry two and stir for pre-dispersion to obtain slurry three. Among them, the mass of the polyvinylpyrrolidone dispersant accounts for 5% of the total mass of indium oxide, terbium oxide, tantalum oxide, titanium oxide powder, and holmium oxide powder. The dispersion rotation speed is 100 rpm, the dispersion time is 40 min, and the solid content in the slurry is 65%.

[0066] Step 6: Pump the slurry obtained in step (5) into a sand mill using a three - use pneumatic diaphragm pump for grinding to obtain Slurry Four. The grinding speed is 1300 rpm and the grinding time is 8 h;

[0067] Step 7: Add a binder to Slurry Four obtained in step (6) for pre - dispersion. The pre - dispersion time is 30 min and the dispersion speed is 100 rpm; the obtained slurry is pumped into a sand mill using a pneumatic diaphragm pump for grinding to obtain Slurry Five. Among them, the grinding time is 2 h and the grinding speed is 1300 rpm. The binder accounts for 10% of the total mass of the added powder and the binder, and the D90 of Slurry Five is 0.971 μm.

[0068] Step 8: Pump Slurry Five obtained in step (7) into a concurrent - flow spray drying tower for spray granulation, then carry out mixing and screening to obtain the required precursor powder. Among them, the outlet air temperature is 68 °C and the atomizer frequency is 60 Hz.

[0069] Step 9: Press the powder prepared in step (8) by die pressing and cold isostatic pressing in sequence to obtain a green body of the target. When die - pressing the target, the pressure is 90 Mpa and the pressure - holding time is 120 s; when cold isostatic pressing, the pressure is 350 Mpa and the pressure - holding time is 120 s.

[0070] Step 10: Heat - treat the terbium indium tantalum titanium holmium oxide target blank obtained in step (9). Control the temperature at 600 °C for degreasing treatment (the heat - preservation time is 2.5 hours and the heating rate is 0.15 °C / min), then cool to room temperature, introduce oxygen with a flow rate of 60 L / min, and increase the sintering temperature for sintering to obtain a terbium indium tantalum titanium holmium oxide target (the sintering temperature is 1450 °C, the heating rate is 0.1 °C / min, and the heat - preservation time is 12 h)

[0071] The relative density of the target measured is 99.45%, the resistivity of the target is 0.922 mΩ·cm, and the transmittance of the sputtered film of the target is 86.32%.

[0072] Comparative Example 1

[0073] Compared with Example 3, in this comparative example, terbium oxide powder is not added, and other conditions are the same as those in Example 3.

[0074] The relative density of the target measured is 97.41%, the resistivity of the target is 9.047 mΩ·cm, and the transmittance of the sputtered film of the target is 84.85%.

[0075] Comparative Example 2

[0076] Compared with Example 3, in this comparative example, holmium oxide powder is not added, and other conditions are the same as those in Example 3.

[0077] The relative density of the target was measured to be 98.12%, the resistivity of the target was 2.943 mΩ·cm, and the transmittance of the sputtered film of the target was 72.21%.

[0078] Comparative Example 3

[0079] In comparison with Example 3, tantalum oxide powder was not added in this comparative example, and other conditions were the same as those in Example 3.

[0080] The relative density of the target was measured to be 95.29%, the resistivity of the target was 7.361 mΩ·cm, and the transmittance of the sputtered film of the target was 75.38%.

[0081] Comparative Example 4

[0082] In comparison with Example 3, titanium oxide powder was not added in this comparative example, and other conditions were the same as those in Example 3.

[0083] The relative density of the target was measured to be 96.57%, the resistivity of the target was 3.571 mΩ·cm, and the transmittance of the sputtered film of the target was 73.63%.

[0084] Performance Test

[0085] The test band for the transmittance test was 200 - 1300 nm, and the test method was ultraviolet-visible spectrophotometry.

[0086] All the experimental data of the above examples and comparative examples are shown in Table 1 below:

[0087] Table 1 Experimental Results

[0088]

[0089]

[0090] Result Analysis:

[0091] 1. It can be found by comparing Example 3 with Comparative Examples 1 and 3 that terbium oxide and tantalum oxide determine the resistivity in the present invention; it can be found by comparing Example 3 with Comparative Examples 2 and 4 that holmium oxide and titanium oxide determine the transmittance. It can be seen by comparing Example 3 with Comparative Examples 3 and 4 that tantalum oxide has a significant influence on the relative density. The possible reasons for this result are:

[0092] (1) Terbium oxide has a high dielectric constant and a low loss tangent value; (2) Holmium oxide has a wider bandgap, which is beneficial to further improving the light transmittance of the thin film; (3) Tantalum oxide can accelerate the electron migration ability, thereby improving the conductivity of the target, but tantalum oxide has a higher crystallinity at high temperatures, thereby reducing the light transmittance of the thin film, while titanium oxide can inhibit the crystallization of tantalum oxide; (4) The thermal expansion coefficient of titanium oxide increases with the increase of temperature, resulting in poor compactness of the target, while tantalum oxide can effectively reduce the activity of titanium oxide, thereby reducing the change of the thermal expansion coefficient.

[0093] The above embodiments are the preferred embodiments of the present invention, but the embodiments of the present invention are not limited to the above embodiments. Any other changes, modifications, substitutions, combinations, and simplifications made without departing from the spirit and principle of the present invention shall be equivalent replacement methods and are all included in the protection scope of the present invention.

Claims

1. A preparation method of an indium terbium tantalum titanium holmium target with high transmittance, characterized in that, the method specifically is: preparing a target precursor by using indium oxide powder, terbium oxide powder, tantalum oxide powder, titanium oxide powder and holmium oxide powder with a mass ratio of 94.8 - 96.2:0.1 - 0.5:1.0 - 1.3:2.0 - 2.5:0.7 - 0.9, and then performing aerobic sintering.

2. The preparation method of the indium terbium tantalum titanium holmium target with high transmittance according to claim 1, characterized in that, the temperature of aerobic sintering is 1100 - 1500 °C, and the oxygen flow rate is 20 - 60 L / min.

3. The preparation method of the indium terbium tantalum titanium holmium target with high transmittance according to claim 2, characterized in that, the heat preservation time of aerobic sintering is 8 - 12 h, and the heating rate when heating to the sintering temperature is 0.1 - 0.5 °C / min.

4. The preparation method of the indium terbium tantalum titanium holmium target with high transmittance according to claim 1, characterized in that, a degreasing operation is performed before the target precursor undergoes aerobic sintering. The degreasing operation is carried out at a temperature of 400 °C - 600 °C for degreasing treatment, with a heat preservation time of 1 - 8 hours and a heating rate of 0.1 - 0.2 °C / min; the degreasing operation is carried out in an air or oxygen atmosphere.

5. The preparation method of the indium terbium tantalum titanium holmium target with high transmittance according to claim 4, characterized in that, the preparation method of the target precursor is: Step 1: Adding terbium oxide powder, tantalum oxide powder, titanium oxide powder and holmium oxide powder into an aqueous solution containing a first dispersant, dispersing and then grinding to obtain a first slurry; Step 2: Adding indium oxide powder and a second dispersant into the first slurry and grinding to obtain a second slurry; Step 3: Adding a binder into the second slurry and grinding to obtain a third slurry; Step 4: Drying and powdering the third slurry, and performing die pressing and cold isostatic pressing to obtain a precursor.

6. The preparation method of the indium terbium tantalum titanium holmium target with high transmittance according to claim 5, characterized in that, the first dispersant and the second dispersant are each independently selected from one or more of polyvinylpyrrolidone, sodium dodecylbenzenesulfonate, polycarboxylic acid compounds, polyvinyl salts or sodium hexadecylbenzenesulfonate; the first dispersant is equivalent to 0.1 - 5% of the total mass of terbium oxide powder, tantalum oxide powder, titanium oxide powder and holmium oxide powder; the second dispersant is equivalent to 0.1 - 5% of the total mass of indium oxide powder, terbium oxide powder, tantalum oxide powder, titanium oxide powder and holmium oxide powder; the binder accounts for 5 - 20% of the total mass of indium oxide powder, terbium oxide powder, tantalum oxide powder, titanium oxide powder, holmium oxide powder and the binder; the binder is one or two of a mixture of polyvinyl alcohol and polyethylene glycol, polyvinyl alcohol or polyvinyl butyral.

7. An indium terbium tantalum titanium holmium target, characterized in that, it is prepared by using the method according to any one of claims 1 - 6.

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