Chemical source introduction system and method and thin film deposition apparatus

Abstract

The application discloses a chemical source introduction system and method and a thin film deposition device. The introduction system comprises a chemical source cavity for storing liquid chemical source; a first pipeline connected to the chemical source cavity for introducing carrier gas into the chemical source cavity; and a second pipeline connected to the chemical source cavity at one end and to a reaction cavity at the other end for transmitting the liquid chemical source into the reaction cavity through the carrier gas for deposition reaction. The introduction system further comprises a third pipeline group comprising a third main pipeline and a third branch pipeline, the third branch pipeline being connected to the first pipeline, the second pipeline and the third main pipeline, and a purge gas being continuously circulated in the third main pipeline, so that the continuously introduced carrier gas enters the third main pipeline through the third branch pipeline and is pushed out of the third main pipeline by the purge gas after the carrier gas carrying the liquid chemical source is sent into the reaction cavity. The application can improve the chemical source reactant ratio, increase the deposition rate of the deposition reaction, reduce particles and improve particle stability, and obtain better process performance.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of semiconductor devices, and in particular to a chemical source introduction system, a chemical source introduction method, a thin film deposition device, and a computer readable storage medium. BACKGROUND

[0002] Atomic layer deposition (ALD) process is a commonly used film plating technique. A complete ALD cycle can be divided into four steps: the first step is to introduce a first precursor chemical source into the reaction chamber, to cause a chemical adsorption reaction on the exposed substrate surface, the second step is to purge the remaining unreacted first precursor chemical source by a carrier gas, the third step is to introduce a second precursor chemical source into the reaction chamber to cause a chemical reaction with the first precursor chemical source, and the fourth step is to purge the remaining unreacted precursor and by-products out of the reaction chamber by introducing a carrier gas.

[0003] In the four-step reaction process of the existing atomic layer deposition film plating device, the carrier gas carrying the precursor chemical source is introduced into the reaction chamber. However, in actual process, only in the first step, the carrier gas has a substantial effect, and in the subsequent steps, the carrier gas has little effect. However, the carrier gas introduced into the reaction chamber increases the gas partial pressure entering the reaction chamber, thereby reducing the concentration ratio of the second precursor chemical source introduced into the reaction chamber in the third step, affecting the deposition rate of the deposition reaction, and easily producing particle contamination, affecting the process performance of the deposition.

[0004] In order to solve the above problems existing in the prior art, there is an urgent need in the art for a chemical source introduction technology which can reduce the gas partial pressure entering the reaction chamber, improve the concentration ratio of the precursor chemical source, improve the deposition rate of the deposition reaction, reduce particles and improve particle stability, and obtain more excellent process performance. SUMMARY

[0005] The following presents a simplified summary of one or more aspects in order to provide a basic understanding of such aspects. This summary is not an extensive overview of all contemplated aspects, and is intended to neither identify key or critical elements of all aspects nor delineate the scope of any or all aspects. Its sole purpose is to present some concepts of one or more aspects in a simplified form as a prelude to the more detailed description that is presented later.

[0006] In order to overcome the above-mentioned defects of the prior art, the present application provides a chemical source introduction system, a chemical source introduction method, a computer readable storage medium, and a thin film deposition device, which can reduce the gas partial pressure into the reaction chamber, improve the concentration ratio of the precursor chemical source, improve the deposition rate of the deposition reaction, reduce particles and improve particle stability, and obtain more excellent process performance.

[0007] Specifically, the above-mentioned chemical source introduction system according to the first aspect of the present application comprises: a chemical source chamber for storing a liquid chemical source therein; a first pipeline connected to the chemical source chamber at one end to introduce a carrier gas into the chemical source chamber; and a second pipeline connected to the chemical source chamber at one end and connected to a reaction chamber at the other end to deliver the liquid chemical source into the reaction chamber via the carrier gas for a deposition reaction, wherein the introduction system further comprises: a third pipeline group comprising a third main pipeline and a third branch pipeline, the third branch pipeline being in communication with the first pipeline, the second pipeline and the third main pipeline, and a purge gas being continuously flowed in the third main pipeline to make the continuously introduced carrier gas enter the third main pipeline via the third branch pipeline and be pushed out of the third main pipeline by the purge gas after the carrier gas carrying the liquid chemical source is sent into the reaction chamber.

[0008] Further, in some embodiments of the present application, one end of the third main pipeline is connected to a purge gas source to continuously introduce the purge gas into the third main pipeline, and the other end of the third main pipeline is connected to a vacuum pump to accelerate the flow rate of the purge gas and the carrier gas in the third main pipeline.

[0009] Further, in some embodiments of the present application, the purge gas comprises an inert gas.

[0010] Further, in some embodiments of the present application, a first valve is arranged on the first pipeline to control the introduction of the carrier gas into the chemical source chamber, and a second valve and a third valve are arranged on the second pipeline, wherein the second valve is used to control the sending of the carrier gas carrying the liquid chemical source into the chemical source chamber, and the third valve is used to control the introduction of the carrier gas carrying the liquid chemical source into the reaction chamber.

[0011] Further, in some embodiments of the present application, a fourth valve is arranged on a first branch pipeline connecting the first pipeline and the second pipeline in the third branch pipeline, and a fifth valve is arranged on a second branch pipeline connecting the second pipeline and the third main pipeline in the third branch pipeline to control the continuously introduced carrier gas to enter the third main pipeline.

[0012] Further, the method for introducing the chemical source according to the second aspect of the present application includes the following steps: introducing a carrier gas into a chemical source cavity through a first pipeline, wherein the chemical source cavity contains a first chemical source; introducing the carrier gas carrying the first chemical source into a reaction cavity through a second pipeline; continuing to introduce the carrier gas and changing the flow path of the carrier gas so that it flows out through a third pipeline group; and introducing a second chemical source into the reaction cavity to react with the first chemical source.

[0013] Further, in some embodiments of the present application, the third pipeline group includes a third main pipeline and a third branch pipeline, and the step of continuing to introduce the carrier gas and changing the flow path of the carrier gas so that it flows out through the third pipeline group includes: continuing to introduce the carrier gas into the first pipeline; adjusting the flow path of the carrier gas to the third branch pipeline and flowing to the third main pipeline through the third branch pipeline, wherein the third branch pipeline is connected to the first pipeline, the second pipeline and the third main pipeline; and continuously introducing a purge gas into the third main pipeline so that the purge gas pushes the carrier gas in the third main pipeline out of the third main pipeline.

[0014] Further, in some embodiments of the present application, the outlet end of the third main pipeline is connected to a vacuum pump, and the step of continuously introducing a purge gas into the third main pipeline so that the purge gas pushes the carrier gas in the third main pipeline out of the third main pipeline includes: continuously introducing the purge gas into the inlet end of the third main pipeline; and opening the outlet end of the third main pipeline connected to the vacuum pump to accelerate the flow rate of the purge gas and the carrier gas in the third main pipeline.

[0015] Further, the computer readable storage medium according to the third aspect of the present application stores computer instructions. When the computer instructions are executed by a processor, the method for introducing the chemical source according to the second aspect of the present application is implemented.

[0016] Further, the thin film deposition device according to the fourth aspect of the present application includes: a reaction cavity in which a wafer is placed; and a chemical source introduction system for introducing a first chemical source and a second chemical source into the reaction cavity to perform a thin film deposition reaction on the surface of the wafer. BRIEF DESCRIPTION OF DRAWINGS

[0017] The above features and advantages of the present application can be better understood by reading the detailed description of embodiments of the present application in conjunction with the following drawings, in which: components are not necessarily drawn to scale and components of similar or identical function or structure can be designated with the same or similar reference numerals.

[0018] Figure 1A schematic diagram of the structure of a chemical source introduction system provided by the prior art is shown;

[0019] Figure 2 A schematic diagram of a chemical source introduction system according to some embodiments of the present invention is shown;

[0020] Figure 3A A schematic diagram of the process of introducing a chemical source into a reaction chamber according to some embodiments of the present invention is shown;

[0021] Figure 3B A schematic diagram of a chemical source extraction reaction chamber process according to some embodiments of the present invention is shown; and

[0022] Figure 4 A flowchart of a method for introducing a chemical source according to some embodiments of the present invention is shown.

[0023] Figure Labels

[0024] 10, 20 Chemical source introduction systems;

[0025] 101, 201 Chemical source chambers;

[0026] 111, 211 First pipeline;

[0027] 112, 212 Second Pipeline;

[0028] Branch road 113;

[0029] 121, 221 First valve;

[0030] 122, 222 Second valve;

[0031] 123, 223 Third valve;

[0032] 130, 260 carrier gas;

[0033] 140 and 240 reaction chambers;

[0034] 230 Third pipeline group;

[0035] 231 Third Main Road;

[0036] 232 Third Branch Road;

[0037] 2321 First branch road;

[0038] 2322 First branch road;

[0039] 224 Fourth valve;

[0040] 225 Fifth valve;

[0041] 250 purge gas; and

[0042] S410-S440 steps. DETAILED DESCRIPTION

[0043] The present application will now be described by specific embodiments, which are provided for illustration only, and should not be construed in any way to limit the further scope of the present application. Although the present application is described in conjunction with a preferred embodiment, it will be understood that they are not intended to limit the further scope of the present application to the described embodiment. On the contrary, the described embodiment is intended to cover alternatives, modifications, and equivalents, which can be included within the scope of the present application as defined by the claims. In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present application. The present application can be practiced without the specific details. In other instances, well-known methods have not been described in detail in order not to unnecessarily obscure the present application.

[0044] In the description of the present application, it is to be understood that the terms "mounting", "connected", "connecting", should be construed broadly according to the context in which they are used, for example, they can be fixed connection, or detachable connection, or integrally connected; can be mechanical connection, or electrical connection; can be directly connected, or indirectly connected through an intermediate medium, or the internal communication of two elements. For those skilled in the art, the specific meaning of the above terms in the present application can be understood according to the specific circumstances.

[0045] In addition, "up", "down", "left", "right", "top", "bottom", "horizontal", "vertical" used in the following description should be understood as the orientation shown in the section and the related drawings. The relative terms are only for the convenience of description, and do not mean that the device described should be manufactured or operated in a particular orientation, and therefore should not be understood as a limitation on the present application.

[0046] It is understood that although the terms "first", "second", "third" and the like can be used herein to describe various components, regions, layers and / or sections, these components, regions, layers and / or sections should not be limited by these terms, and these terms are only used to distinguish different components, regions, layers and / or sections. Therefore, the first component, region, layer and / or section discussed below can be referred to as the second component, region, layer and / or section without departing from some embodiments of the present application.

[0047] As described above, the existing atomic layer deposition coating equipment carries the carrier gas of the precursor chemical source into the reaction chamber in the four-step reaction process of the ALD cycle. For specific reference, see Figure 1 , Figure 1 The structure schematic diagram of the chemical source introduction system provided by the prior art is shown. As shown inFigure 1 As shown, the chemical source introduction system 10 in the prior art includes a chemical source chamber 101, a first pipeline 111, a second pipeline 112, a branch pipeline 113, a first valve 121, a second valve 122, and a third valve 123. The first pipeline 111 is connected to the chemical source chamber 101 at one end, for introducing a carrier gas 130. The second pipeline 112 is connected to the chemical source chamber 101 at one end, and to a reaction chamber 140 at the other end. The first pipeline 111 and the second pipeline 112 are connected through the branch pipeline 113.

[0048] In a complete ALD cycle, in the first step of the ALD cycle, the first valve 121 and the third valve 123 are opened, and the second valve 122 is closed. The external carrier gas 130 enters the chemical source chamber 101 through the first pipeline 111, and transports the first precursor chemical source in the chemical source chamber 101 into the reaction chamber 140 through the carrier gas 130 for a deposition reaction. Then, in the second step of the ALD cycle, the first valve 121 and the third valve 123 are closed, and the second valve 122 is opened, to change the flow path of the carrier gas, so that the carrier gas 130 can flow to the second pipeline 112 through the branch pipeline 113, to achieve the effect of purging the remaining first chemical source in the pipeline. In the third step of the ALD cycle, the second precursor chemical source is introduced into the reaction chamber 140 to chemically react with the first precursor chemical source. Finally, the first valve 121 and the third valve 123 are opened, and the second valve 122 is closed, to continue introducing the carrier gas 130 into the chemical source introduction system 10, to purge the unreacted first precursor chemical source and by-products in the pipeline.

[0049] As can be seen, in the four-step reaction process of the actual ALD cycle, only in the first step of the ALD cycle does the carrier gas 130 have a substantial effect, that is, to bring the first precursor chemical source in the chemical source chamber 101 into the reaction chamber 140. In the subsequent steps, the carrier gas 130 has little effect, but the carrier gas 130 introduced into the reaction chamber 140 in the subsequent steps increases the gas partial pressure entering the reaction chamber 140, thereby reducing the concentration ratio of the second precursor chemical source introduced into the reaction chamber 140, affecting the deposition rate of the deposition reaction, and easily producing particles, affecting the process performance of the deposition.

[0050] In order to solve the above problems in the prior art, the present application provides a chemical source introduction system, a chemical source introduction method, a computer-readable storage medium, and a thin film deposition device, which can reduce the gas partial pressure entering the reaction chamber, increase the concentration ratio of the precursor chemical source, improve the deposition rate of the deposition reaction, reduce particles and improve particle stability, and obtain more excellent process performance.

[0051] In some non-limiting embodiments, the chemical source introduction system according to the first aspect of the present application can be configured in the thin film deposition apparatus according to the fourth aspect of the present application, and the method of introducing a chemical source according to the second aspect of the present application can be implemented by the chemical source introduction system according to the first aspect of the present application. In some non-limiting embodiments, the method of introducing a chemical source according to the second aspect of the present application can be stored in the computer readable storage medium according to the third aspect of the present application in the form of a software program, wherein the computer readable storage medium has stored thereon computer instructions that, when executed by a processor, implement the method of introducing a chemical source according to the second aspect of the present application.

[0052] Reference is made to Figure 2 , Figure 2 FIG. 1 shows a schematic diagram of a chemical source introduction system according to some embodiments of the present application.

[0053] As shown in Figure 2 , in some embodiments of the present application, the chemical source introduction system 20 can include a chemical source cavity 201 configured to store a liquid chemical source therein, a first pipeline 211 having one end connected to the chemical source cavity 201 to introduce a carrier gas 260 into the chemical source cavity 201, and a second pipeline 212 having one end connected to the chemical source cavity 201 and the other end connected to a reaction cavity 240 to deliver the liquid chemical source carried by the carrier gas 260 into the reaction cavity 240 for deposition reaction.

[0054] Specifically, reference can be made to Figure 3A , Figure 3A FIG. 2 shows a schematic diagram of a chemical source introduction reaction cavity according to some embodiments of the present application.

[0055] As shown in Figure 2 and Figure 3A , the first pipeline 211 can include a first valve 221 configured to control the introduction of the carrier gas 260 in the chemical source cavity 201 by opening and closing the first valve 221. Further, the flow rate and flow velocity of the introduced carrier gas 260 can be adjusted by adjusting the opening degree of the first valve 221. The second pipeline 212 can include a second valve 222 and a third valve 223, wherein the second valve 222 can be configured to control the delivery of the carrier gas 260 carrying the liquid chemical source in the chemical source cavity 201, and the third valve 223 can be configured to control the introduction of the carrier gas carrying the liquid chemical source into the reaction cavity 240. Further, in some embodiments, the flow rate and flow velocity of the carrier gas 260 carrying the liquid chemical source introduced into the second pipeline 212 can be adjusted by adjusting the opening degree of the second valve 222, and the flow rate and flow velocity of the carrier gas 260 carrying the liquid chemical source introduced into the reaction cavity 240 can be adjusted by adjusting the opening degree of the third valve 223.

[0056] Furthermore, such as Figure 2 As shown, the chemical source introduction system 20 may further include a third pipeline group 230. The third pipeline group 230 may include a third main pipeline 231 and a third branch pipeline 232. The third branch pipeline 232 may connect the first pipeline 211, the second pipeline 212, and the third main pipeline 231. Further, in the third branch pipeline 232, the first section 2321 connecting the first pipeline 211 and the second pipeline 212 may include a fourth valve 224, and the second section 2322 connecting the second pipeline 212 and the third main pipeline 231 may include a fifth valve 225. The flow rate and velocity of the carrier gas 260 entering the third branch pipeline 232 can be controlled by the fourth valve 224 and the fifth valve 225, respectively.

[0057] Please refer to Figure 3B , Figure 3B A schematic diagram of a chemical source extraction reaction chamber process provided according to some embodiments of the present invention is shown.

[0058] like Figure 3B As shown, after the first step of the ALD cycle is completed, the flow path of the carrier gas 260 can be changed through the third branch 232 and its fourth valve 224 and fifth valve 225, so that it enters the third main pipeline 231. Further, after the carrier gas 260 carrying the liquid chemical source is introduced into the reaction chamber 240, the carrier gas 260 changes its flow path and enters the third pipeline group 230 to purge the pipelines (for example, it may include the third branch 232, and parts of the first pipeline 211 and the second pipeline 212) to purge the residual chemical source in these pipelines from the chemical source introduction system 20. At the same time, the purging gas 250 can be continuously introduced into the third main pipeline 231 so that when the continuously introduced carrier gas 260 flows to the third main pipeline 231, it can be carried out of the third main pipeline 231 by the purging gas 250.

[0059] Specifically, one end of the third main pipeline 231 can be connected to a purge gas source ( Figure 3B (Not shown in the diagram) is used to continuously supply purge gas 250 into the third main pipeline 231 to maintain a continuous flow of purge gas 250 within the third main pipeline 231. Optionally, the purge gas 250 may include an inert gas, such as nitrogen, argon, etc.

[0060] Furthermore, in some preferred embodiments, the other end of the third main pipeline 231 may also be connected to an air pump. Figure 3B(Not shown in the diagram). By evacuating the interior of the third main pipeline 231 using a vacuum pump, the flow rates of the purge gas 250 and carrier gas 260 within the third main pipeline 231 can be further increased. This improves the control of the purge gas 250 over the flow direction of the carrier gas 260, i.e., it increases the pushing force of the purge gas 250 on one end of the third main pipeline 231 to prevent the carrier gas 260 from flowing in the opposite direction and continuing to flow back to the third branch pipeline 232, or even the second pipeline 212, ultimately affecting the gas partial pressure and the concentration of the liquid chemical source within the reaction chamber 240.

[0061] In some optional embodiments, the chemical source introduction system 20 described above can be configured in a thin film deposition apparatus. The thin film deposition apparatus may include a reaction chamber 240 and the chemical source introduction system 20. A wafer is placed inside the reaction chamber 240. A first chemical source and / or a second chemical source can be introduced into the reaction chamber 240 through the chemical source introduction system 20. Optionally, in some other embodiments, the chemical source introduction system 20 may include a second chemical source. Further, in some preferred embodiments, the chemical source introduction system 20 may also include multiple different types of chemical sources; for example, it may include multiple chemical source cavities 201, thereby enabling the introduction of multiple chemical sources into the reaction chamber 240. Within the reaction chamber 240, the introduced first and second chemical sources can perform a thin film deposition reaction on the wafer surface.

[0062] The working principle of the chemical source introduction system 20 described above will be described below with reference to embodiments of some chemical source introduction methods. Those skilled in the art will understand that these embodiments of chemical source introduction methods are merely non-limiting implementations provided by the present invention, intended to clearly demonstrate the main concepts of the invention and provide specific solutions convenient for public implementation, rather than limiting all working methods or functions of the chemical source introduction system 20. Similarly, the chemical source introduction system 20 is also only one non-limiting implementation provided by the present invention and does not limit the entities implementing the steps in these chemical source introduction methods.

[0063] Please refer to Figure 4 , Figure 4 A flowchart of a method for introducing a chemical source according to some embodiments of the present invention is shown.

[0064] like Figure 4 As shown, in some embodiments of the present invention, the method for introducing a chemical source may include step S410: introducing carrier gas into the chemical source cavity through a first pipeline.

[0065] Specifically, it can be combined with Figure 3AAs shown, the chemical source chamber 201 can store the first chemical source. By opening the first valve 221, the second valve 222, and the third valve 223 and closing the fourth valve 224 and the fifth valve 225, carrier gas 260 can be introduced into the chemical source chamber 201 through one end of the first pipeline 211.

[0066] like Figure 4 As shown, the method for introducing the chemical source may further include step S420: introducing a carrier gas carrying the first chemical source into the reaction chamber via a second pipeline.

[0067] Specifically, such as Figure 3A As shown, the carrier gas 260 introduced into the chemical source cavity 201 can carry the first chemical source at a certain flow rate, flow out from the second pipeline 212 and into the reaction cavity 240. Here, the carrier gas 260 only plays the role of carrying and does not react with the carried chemical source.

[0068] A wafer can be placed inside the reaction chamber 240. In an ideal ALD growth process, different chemical source precursors, namely the first chemical source and the second chemical source, can be selectively alternately exposed to the surface of the wafer, where they undergo chemical adsorption and reaction on the wafer surface to form a deposited thin film.

[0069] like Figure 4 As shown, the method for introducing a chemical source may further include step S430: continuing to introduce carrier gas and changing the flow path of the carrier gas so that it flows to the outside via the third pipeline group.

[0070] like Figure 3B As shown, after completing the above steps of the ALD cycle, the first valve 221, the second valve 222, and the third valve 223 can be closed and the fourth valve 224 and the fifth valve 225 can be opened. Carrier gas 260 can continue to be introduced into the first pipeline 211, thereby changing the flow path of the carrier gas 260 so that it flows to the outside through the third pipeline group 230.

[0071] Specifically, after the carrier gas 260 carrying the liquid chemical source is introduced into the reaction chamber 240, the carrier gas 260 changes its flow path and enters the third pipeline group 230 to purge the pipelines (for example, it may include the third branch 232, and parts of the first pipeline 211 and the second pipeline 212) to purge the residual chemical source in these pipelines out of the chemical source introduction system 20. At the same time, the purging gas 250 can be continuously introduced into the third main pipeline 231 so that when the continuously introduced carrier gas 260 flows to the third main pipeline 231, it can be carried out of the third main pipeline 231 by the purging gas 250.

[0072] One end of the third main pipeline 231 can be connected to a purge gas source. Figure 3BThe third main pipe 231 is connected to a purge gas source (not shown in the figure) to continuously introduce purge gas 250 into the third main pipe 231 to keep the purge gas 250 flowing in the third main pipe 231. Optionally, the purge gas 250 can include inert gas, such as nitrogen, argon, and the like.

[0073] Further, in some preferred embodiments, the other end of the third main pipe 231 can also be connected to a vacuum pump (not shown in the figure). Figure 3B By pumping the inside of the third main pipe 231, the flow rate of the purge gas 250 and the carrier gas 260 in the third main pipe 231 can be further accelerated, thereby increasing the control of the purge gas 250 on the flow direction of the carrier gas 260, i.e. increasing the top force of the purge gas 250 on the carrier gas 260 to the outside of one end of the third main pipe 231, avoiding the reverse flow of the carrier gas 260, continuing to flow back to the third branch pipe 232, and even the second pipe 212, and finally affecting the gas partial pressure in the reaction chamber 240 and the concentration of the liquid chemical source.

[0074] As shown in Figure 4 The method of introducing the chemical source can further include the step S440 of introducing a second chemical source into the reaction chamber to react with the first chemical source.

[0075] In some embodiments, another set of chemical source introduction system 20 can be provided to introduce a second chemical source into the reaction chamber 240. In other embodiments, a second chemical source cavity can also be provided in the original chemical source introduction system 20 to provide a second chemical source into the reaction chamber 240. The first chemical source and the second chemical source in the reaction chamber 240 perform a chemical reaction of thin film deposition on the wafer surface.

[0076] Although the above method is illustrated and described as a series of actions for simplicity of explanation, it should be understood and appreciated that the method is not limited by the order of the actions, because according to one or more embodiments, some actions can occur in different order and / or concurrently with other actions illustrated and described herein or not illustrated and described herein but can be understood by those skilled in the art.

[0077] In summary, the present application provides a chemical source introduction system, a chemical source introduction method, and a thin film deposition device, which adjusts and changes the flow path of the carrier gas in the subsequent steps of the ALD cycle reaction through the third pipe group to guide the carrier gas without chemical source to the outside, thereby reducing the gas partial pressure into the reaction chamber, improving the concentration ratio of the precursor chemical source, improving the deposition rate of the deposition reaction, reducing particles and improving particle stability, and obtaining better process performance. On this basis, the chemical source introduction system provided by the present application also has a structure for preventing the reverse flow of the carrier gas, which avoids the adverse effects of the reverse flow of the carrier gas.

[0078] The previous description of the disclosure is provided to enable any person skilled in the art to make or use the disclosure. Modifications to various implementations of the disclosure will be apparent to those skilled in the art, and the instant disclosure is intended to include all such modifications that are within its spirit and scope. Thus, the disclosure is not intended to be limited to the examples described herein and the person of ordinary skill in the art will be able to devise alterations and variations that are within the scope of the disclosure as defined by the claims.

Claims

1. A method for introducing a chemical source, implemented via a chemical source introduction system, wherein, The introduction system includes a chemical source chamber, a first pipeline, a second pipeline, and a third pipeline assembly. The chemical source chamber stores a liquid chemical source, including a first chemical source and a second chemical source. One end of the first pipeline is connected to the chemical source chamber, and one end of the second pipeline is also connected to the chemical source chamber, with the other end connected to a reaction chamber. The third pipeline assembly includes a third main pipeline and a third branch pipeline. The third branch pipeline connects the first pipeline, the second pipeline, and the third main pipeline. A purge gas continuously flows through the third main pipeline so that after a carrier gas carrying the liquid chemical source is introduced into the reaction chamber, the continuing to flow carrier gas enters the third main pipeline via the third branch pipeline and is pushed out of the third main pipeline by the purge gas. The introduction method includes the following steps: Carrier gas is introduced into the chemical source cavity through the first pipeline, wherein the chemical source cavity contains a first chemical source; The carrier gas carrying the first chemical source is introduced into the reaction chamber via a second pipeline; In response to the completion of the first step of the ALD cycle, the carrier gas continues to be supplied, and the flow path of the carrier gas is changed so that it flows to the outside via the third piping group to maintain the gas partial pressure within the reaction chamber; and A second chemical source is introduced into the reaction chamber to react chemically with the first chemical source.

2. The import method as described in claim 1, characterized in that, The third pipeline assembly includes a third main pipeline and a third branch pipeline. The step of continuing to supply the carrier gas and changing the flow path of the carrier gas so that it flows to the outside via the third pipeline assembly includes: Continue to supply the carrier gas into the first pipeline; The flow path of the carrier gas is adjusted to the third branch, and the gas flows through the third branch to the third main pipeline, wherein the third branch connects the first pipeline, the second pipeline, and the third main pipeline; and Purge gas is continuously introduced into the third main pipeline so that the purge gas pushes the carrier gas out of the third main pipeline.

3. The import method as described in claim 2, characterized in that, The outlet end of the third main pipeline is connected to a vacuum pump. The step of continuously introducing purge gas into the third main pipeline to push the carrier gas out of the third main pipeline includes: The purging gas is continuously introduced at the inlet end of the third main pipeline; Connect the air pump to the outlet end of the third main pipeline to accelerate the flow rate of the purging gas and the carrier gas in the third main pipeline.

4. The import method as described in claim 1, characterized in that, One end of the third main pipeline is connected to a purge gas source to continuously supply purge gas into the third main pipeline, and the other end of the third main pipeline is connected to a vacuum pump to accelerate the flow rate of the purge gas and the carrier gas in the third main pipeline.

5. The import method as described in claim 4, characterized in that, The purging gas includes an inert gas.

6. The import method as described in claim 1, characterized in that, The first pipeline includes a first valve for controlling the introduction of the carrier gas into the chemical source chamber. The second pipeline includes a second valve and a third valve, wherein the second valve is used to control the delivery of the carrier gas carrying the liquid chemical source into the chemical source chamber, and the third valve is used to control the introduction of the carrier gas carrying the liquid chemical source into the reaction chamber.

7. The import method as described in claim 6, characterized in that, The first section of the third branch connecting the first pipeline and the second pipeline includes a fourth valve, and the second section of the third branch connecting the second pipeline and the third main pipeline includes a fifth valve, for controlling the continued flow of the carrier gas into the third main pipeline.

8. A computer-readable storage medium storing computer instructions thereon, characterized in that, When the computer instructions are executed by the processor, the method for introducing a chemical source as described in any one of claims 1 to 7 is implemented.

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